Method for processing crater abnormity after welding of thick aluminum wire of power device product

Abstract

The invention discloses a processing method for crater abnormity after welding of a thick aluminum wire of a power device product. According to the scheme, a current steel nozzle with a smaller groove length is selected to optimize and reduce the length of a welding spot, and the contact area between the thick aluminum wire and the surface of a chip is reduced to avoid crater occurrence; besides, by selecting the optimized preset key parameter group, small key welding parameters are used on the premise of ensuring that the welding spot thrust reaches the product quality standard, so that the pressure borne by the surface of the chip per unit area is reduced to avoid craters; and meanwhile, the searching height of the welding head for the surface of the chip is increased, and the descending speed of the welding head during welding is slowed down, so that stable energy output during welding of the welding head is ensured, the stability in the bonding process is improved, the crater abnormity after thick aluminum wire welding of a power device product is effectively solved, and the product reliability is ensured.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor devices, and in particular to a method for processing abnormal craters after welding thick aluminum wires of power device products. Background Art

[0002] Chips are one of the most important raw materials in the semiconductor packaging process and are the basic materials in the front-end process. During the product packaging stage, the chip and the pin need to be connected with welding wires through ultrasonic welding to form a complete and stable electrical connection. At the same time, a certain push-pull force standard must be met to achieve safe and effective bonding while ensuring that the chip is not damaged, thereby achieving the desired effect during use.

[0003] At present, power device products usually need to meet high power and high current requirements, so the source of power devices needs to be welded with multiple thick aluminum wires to meet the current requirements. In addition, in order to improve chip performance, chip packaging technology is developing towards ultra-high integration, so the challenges in the packaging wire bonding process are becoming increasingly greater. The thick aluminum wire welding process requires relatively large welding power and welding pressure to meet the wire bonding requirements, so craters are prone to occur during the process of welding multiple thick wires at the source of power device products.

[0004] Therefore, how to deal with the abnormal cratering after welding thick aluminum wires of power device products has become an urgent problem to be solved. Summary of the invention

[0005] The present application aims to at least solve the technical problems existing in the prior art. To this end, the first aspect of the present application proposes a method for treating abnormal cratering after welding of a thick aluminum wire of a power device product, the method comprising: Obtaining a preset key parameter group; wherein the preset key parameter group is an optimal parameter group obtained through experimental design; For the bonded lead frame, after setting the preset key parameter group, the current steel nozzle is used to connect the wires according to the preset pressure welding diagram to obtain the welding result; wherein, the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined based on the slot length of the general model of the steel nozzle.

[0006] In a possible implementation, the slot length of the current steel mouthpiece is 850 μm.

[0007] In a possible implementation manner, the process of generating the preset key parameter group includes: Conduct full factorial design experiments on multiple candidate parameters to obtain the ranking results of the impact of each candidate parameter on the preset verification results; Selecting a first preset number of candidate parameters from the impact ranking results to obtain a plurality of candidate parameter groups; For each candidate parameter group, the candidate parameter group is screened to obtain a preset key parameter group.

[0008] In a possible implementation, the candidate parameter groups are screened to obtain a preset key parameter group, including: A second preset number of power device products obtained by selecting the same chip and the same wire bonding method; For each power device product, push and pull force tests are performed according to different candidate parameter groups to obtain test results; The candidate parameter groups that meet the preset conditions in the test results are selected as the preset key parameter groups.

[0009] In a possible implementation, the preset key parameter group includes bonding force, bonding power and bonding time, the bonding force is 750g-950g, the bonding power is 70-85, and the bonding time is 90ms-120ms.

[0010] In a possible implementation, for a bonded lead frame, a preset key parameter group is set and then a current steel nozzle is used to perform wire connection according to a preset pressure welding diagram to obtain a welding result, including: In the preset parameter setting interface, use the preset key parameter group to set parameters; For the bonded lead frame, the preset key parameter group is set and the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain the welding result.

[0011] In a possible implementation, the method further includes: A reliability test is performed on the current power device product corresponding to the welding result to obtain the test result.

[0012] The second aspect of the present application provides a device for processing abnormal craters after welding thick aluminum wires of power device products, the device comprising: An acquisition module is used to acquire a preset key parameter group; wherein the preset key parameter group is an optimal parameter group obtained through experimental design; The welding module is used for the bonded lead frame. After setting the preset key parameter group, the current steel nozzle is used to connect the welding wire according to the preset pressure welding diagram to obtain the welding result; wherein, the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined according to the slot length of the general model of the steel nozzle.

[0013] In a possible implementation, the slot length of the current steel mouthpiece is 850 μm.

[0014] In a possible implementation manner, the device for processing abnormal cratering after welding thick aluminum wire of the power device product is further used for: Conduct full factorial design experiments on multiple candidate parameters to obtain the ranking results of the impact of each candidate parameter on the preset verification results; Selecting a first preset number of candidate parameters from the impact ranking results to obtain a plurality of candidate parameter groups; For each candidate parameter group, the candidate parameter group is screened to obtain a preset key parameter group.

[0015] In a possible implementation manner, the device for processing abnormal cratering after welding thick aluminum wire of the power device product is further used for: A second preset number of power device products obtained by selecting the same chip and the same wire bonding method; For each power device product, push and pull force tests are performed according to different candidate parameter groups to obtain test results; The candidate parameter groups that meet the preset conditions in the test results are selected as the preset key parameter groups.

[0016] In a possible implementation, the preset key parameter group includes bonding force, bonding power and bonding time, the bonding force is 750g-950g, the bonding power is 70-85, and the bonding time is 90ms-120ms.

[0017] In a possible implementation manner, the welding module is specifically used for: In the preset parameter setting interface, use the preset key parameter group to set parameters; For the bonded lead frame, the preset key parameter group is set and the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain the welding result.

[0018] In a possible implementation manner, the device for processing abnormal cratering after welding thick aluminum wire of the power device product is further used for: A reliability test is performed on the current power device product corresponding to the welding result to obtain the test result.

[0019] The third aspect of the present application proposes an electronic device, comprising a processor and a memory, wherein the memory stores at least one instruction, at least one program, a code set or an instruction set, and the at least one instruction, the at least one program, the code set or the instruction set are loaded and executed by the processor to implement the method for processing the abnormal crater after welding of thick aluminum wire of a power device product as described in the first aspect.

[0020] The fourth aspect of the present application proposes a computer-readable storage medium, which stores at least one instruction, at least one program, a code set or an instruction set. The at least one instruction, the at least one program, the code set or the instruction set are loaded and executed by a processor to implement the method for processing the abnormal crater after welding of thick aluminum wire of a power device product as described in the first aspect.

[0021] The embodiments of the present application have the following beneficial effects: The embodiment of the present application provides a method for processing abnormal cratering after welding of a thick aluminum wire of a power device product, the method comprising: obtaining a preset key parameter group, wherein the preset key parameter group is an optimal parameter group obtained through experimental design, and for a lead frame that has been bonded, after setting the preset key parameter group, using the current steel nozzle to perform wire welding according to a preset pressure welding diagram to obtain a welding result, wherein the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined according to the slot length of a steel nozzle of a general model. This solution optimizes and reduces the length of the solder joint by selecting a current steel nozzle with a smaller slot length, and reduces the contact area between the thick aluminum wire and the chip surface to avoid cratering; in addition, by selecting the optimized preset key parameter group, a smaller key welding parameter is used under the premise of ensuring that the solder joint thrust meets the product quality standard, thereby reducing the pressure per unit area of ​​the chip surface to avoid cratering; at the same time, the search height of the soldering head on the chip surface is increased and the descending speed of the soldering head during welding is slowed down, thereby ensuring the stable output of energy during soldering of the soldering head, improving the stability of the bonding process, effectively solving the abnormal cratering after welding of the thick aluminum wire of the power device product, and ensuring the reliability of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of the structure of a wire bonding machine provided in an embodiment of the present application; Figure 2 A flowchart of the steps of a method for processing abnormal cratering after welding of thick aluminum wire of a power device product provided in an embodiment of the present application; Figure 3 A flowchart of the steps for generating a preset key parameter group provided in an embodiment of the present application; Figure 4 A flowchart of the steps for obtaining a preset key parameter group provided in an embodiment of the present application; Figure 5 A schematic diagram of a universal type of steel mouthpiece provided in an embodiment of the present application; Figure 6 A schematic diagram of a current steel mouthpiece provided in an embodiment of the present application; Figure 7 A flowchart of steps for obtaining a welding result provided in an embodiment of the present application; Figure 8A comparison chart of threshold voltage test data before and after a product reliability experiment provided in an embodiment of the present application; Fig. 9 A comparison chart of drain-source breakdown voltage test data before and after a reliability experiment of a product provided in an embodiment of the present application; Fig.10 A comparison chart of gate-source leakage current test data before and after a reliability experiment of a product provided in an embodiment of the present application; Fig.11 A structural block diagram of a device for processing abnormal craters after welding thick aluminum wires of a power device product provided in an embodiment of the present application. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] With the development of the semiconductor industry, the number of transistors, capacitors, resistors, etc. that chips can carry is increasing. The development of chips has also developed from thin and light to ultra-thin, which has brought new challenges to the packaging process. In addition, the chips are mainly based on single-crystal silicon wafers, and the metal-oxide-semiconductor field-effect transistor (MOSFET) or bipolar junction transistor (BJT) components made using lithography, doping and other technologies are relatively sensitive and fragile. During the wire bonding process, due to the gradual increase in output energy, excessive energy occurs at uncertain times, causing the aluminum pad layer in the chip pressure welding area to be damaged and the silicon layer to be injured, that is, the product crater abnormality failure. The occurrence of crater abnormality will not only cause product failure, but also indirectly increase product costs and cause unnecessary waste.

[0025] At present, power device products usually need to meet high power and high current requirements, so the source of power devices needs to be welded with multiple thick aluminum wires to meet the current requirements. In addition, in order to improve chip performance, chip technology is developing towards ultra-high integration, so the challenges in the packaging wire bonding process are becoming increasingly greater. The thick aluminum wire welding process requires relatively large welding power and welding pressure to meet the wire bonding requirements, so craters are prone to occur during the process of welding multiple thick wires at the source of power device products.

[0026] Based on this, the present application proposes a method for processing abnormal crater after welding of thick aluminum wire of power device products, including: obtaining a preset key parameter group, wherein the preset key parameter group is the optimal parameter group obtained by experimental design, for the lead frame of the bonded chip, after setting the preset key parameter group, the current steel nozzle is used to connect the wire according to the preset pressure welding diagram to obtain the welding result, wherein the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined according to the slot length of the steel nozzle of the general model. This scheme optimizes and reduces the length of the solder joint by selecting the current steel nozzle with a smaller slot length, and reduces the contact area between the thick aluminum wire and the chip surface to avoid the occurrence of crater; in addition, by selecting the optimized preset key parameter group, a smaller key welding parameter is used under the premise of ensuring that the thrust of the solder joint meets the product quality standard, thereby reducing the pressure per unit area of ​​the chip surface to avoid the occurrence of crater; at the same time, the search height of the soldering head to the chip surface is increased and the descending speed of the soldering head during welding is slowed down, thereby ensuring the stable output of energy during soldering of the soldering head, improving the stability of the bonding process, effectively solving the abnormal crater after welding of the thick aluminum wire of the power device product, and ensuring the reliability of the product.

[0027] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "multiple" means two or more. In addition, the use of "based on" or "according to" means openness and inclusiveness, because the process, steps, calculations or other actions "based on" or "according to" one or more of the conditions or values ​​may be based on additional conditions or values ​​beyond the described values ​​in practice.

[0028] The method for processing abnormal cratering after welding thick aluminum wire of power device products provided in the present application can be applied to computer equipment (electronic equipment), and the computer equipment can be a wire bonding machine. Figure 1 This is a schematic diagram of the structure of a wire bonding machine provided in an embodiment of the present application. The specific structure of the wire bonding machine can refer to the prior art and will not be described in detail here. Those skilled in the art can understand that Figure 1 The structure shown in the figure is only a block diagram of a partial structure related to the solution of the present application, and does not constitute a limitation on the server to which the solution of the present application is applied. Optionally, the server may include more or fewer components than shown in the figure, or combine certain components, or have a different arrangement of components.

[0029] It should be noted that the execution subject of the embodiments of the present application may be a computer device or a device for detecting cold solder joints in power device products. The following method embodiments are described using a computer device as the execution subject.

[0030] Figure 2 This is a flowchart of the steps of a method for treating abnormal cratering after welding of thick aluminum wire of a power device product provided in an embodiment of the present application. Figure 2 As shown, the method comprises the following steps: Step 202: Obtain a preset key parameter group.

[0031] Among them, the preset key parameter group is the optimal parameter group obtained through experimental design. The preset key parameter group may include parameters such as bonding force, bonding power and bonding time. These parameters are parameters that affect the bonding quality of the solder joint and play a decisive role.

[0032] When generating a preset key parameter group, in some optional embodiments, such as Figure 3 As shown, Figure 3 A flowchart of the steps of generating a preset key parameter group provided in an embodiment of the present application includes: Step 302: Conduct a full factorial design test on multiple candidate parameters to obtain a ranking result of the influence of each candidate parameter on a preset verification result.

[0033] Step 304: Select a first preset number of candidate parameters from the impact ranking results to obtain multiple candidate parameter groups.

[0034] Step 306: For each candidate parameter group, screen the candidate parameter group to obtain a preset key parameter group.

[0035] Among them, the welding process parameters can include various types of parameters, so that various welding process parameters can be used as candidate parameters. Then, a full factorial design experiment can be performed on multiple candidate parameters to obtain the ranking results of the influence of each candidate parameter on the preset verification result, and the preset verification result can be pre-customized. The full factorial design experiment means that all combinations of all levels of all factors must be experimented at least once. The specific implementation process of this method can refer to the existing technology and will not be repeated here.

[0036] Optionally, you can use Minitab software, select full factorial design, and input preset verification results to run the software to obtain the ranking results of the influence of each parameter factor on the result in the Pareto diagram. The parameter factor here is multiple candidate parameters.

[0037] Next, a first preset number of candidate parameters can be selected from the impact ranking results to obtain multiple candidate parameter groups. For example, the first preset number can be three, so that the top three candidate parameters can be selected from the impact ranking results. The top three candidate parameters can be used as input factors for the design of experiment (DOE). DOE is a scientific method that is mainly used to analyze factors that affect results, study the impact of different factors on results, and seek management strategies with optimal quality. When conducting a DOE experiment, such as Figure 4 As shown, Figure 4 A flowchart of steps for obtaining a preset key parameter group provided in an embodiment of the present application includes: Step 402: Select a second preset number of power device products obtained by using the same type of chip and the same type of wire bonding method.

[0038] Step 404: Perform push-pull force tests on each power device product according to different candidate parameter groups to obtain test results.

[0039] Step 406: Select a candidate parameter group that meets the preset conditions in the test results as the preset key parameter group.

[0040] When performing the DOE test, a second preset number of power device products obtained by the same chip and the same wire bonding method can be selected. Optionally, the second preset number can be the same as the number of multiple candidate parameter groups, that is, different candidate parameter groups can be used for DOE tests for corresponding power device products.

[0041] Next, when performing wire bonding verification, multiple groups of different values ​​can be assigned to the top three candidate parameters, so that multiple candidate parameter groups can be obtained and grouped and numbered, so that push-pull force tests can be performed to obtain test results.

[0042] And select the candidate parameter group that meets the preset conditions in the test results, wherein the preset conditions may be that the solder joint appearance is good, the push-pull force meets the standard, and the crater test meets the standard. In other words, a group of candidate parameter groups that the solder joint appearance is good, the push-pull force meets the standard, and the crater test meets the standard can be used as the preset key parameter group obtained by screening.

[0043] In some optional embodiments, the preset key parameter group may include bonding force, bonding power and bonding time. Optionally, the bonding force may be 750g-950g, the bonding power may be 70-85, and the bonding time may be 90ms-120ms. It should be noted that the bonding power value is a proportional value without a unit.

[0044] Step 204 : for the bonded lead frame, after setting a preset key parameter group, use the current steel nozzle to perform wire connection according to a preset pressure welding diagram to obtain a welding result.

[0045] Among them, since the size of the chip solder joint is proportional to the pressure borne by the welding area, the smaller the corresponding solder joint area is, the smaller the pressure borne by the welding area is. Therefore, when selecting consumables, you can choose a current steel nozzle with a smaller slot length. By using a small-sized current steel nozzle, the length of the solder joint can be reduced. Optionally, the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined based on the slot length of a universal type of steel nozzle.

[0046] In some optional embodiments, the slot length of the current steel mouthpiece may be 850 μm. Figure 5 and Figure 6 As shown, Figure 5 A schematic diagram of a universal type of steel mouth provided in an embodiment of the present application, including a groove width W, a groove length L1 and a groove depth D, Figure 6 A schematic diagram of a current steel mouthpiece provided in an embodiment of the present application includes a groove width W, a groove length L2 and a groove depth D. The groove length L2 of the current steel mouthpiece is much smaller than the groove length L1 of the universal type of steel mouthpiece, and the other key dimensions of the groove width W and the groove depth D can remain unchanged.

[0047] For example, taking 20mil aluminum wire as an example, the slot length L1 of a general-purpose steel nozzle may be 1100 μm, and the slot length L2 of the current steel nozzle may be 850 μm. In addition, it has been verified that the thrust value per unit area of ​​the welding point processed by the current steel nozzle can meet the requirements.

[0048] When processing products, Figure 7 As shown, Figure 7 A flowchart of steps for obtaining a welding result provided in an embodiment of the present application includes: Step 702: Perform parameter settings using a preset key parameter group in a preset parameter setting interface.

[0049] Step 704: For the bonded lead frame, the preset key parameter group is set and the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain a welding result.

[0050] Among them, the whole wafer can be cut into single chips through the dicing process, and then the single chip can be glued to the lead frame carrier by solder through the core loading machine to obtain a bonded lead frame, and then the bonded lead frame is connected with corresponding wires according to the bonding diagram.

[0051] When processing, it is necessary to first use the preset key parameter group to set the parameters on the preset parameter setting interface, and then for the bonded lead frame, use the set preset key parameter group to use the current steel nozzle to connect the wires according to the preset pressure welding diagram to obtain the welding result.

[0052] In some optional embodiments, the welding contact force can also be increased during processing. Under the action of the current steel nozzle, the welding wire will apply a greater contact force at the moment the bottom of the weld just touches the chip surface, causing the weld to instantly deform significantly. The contact area between the bottom of the weld and the chip surface becomes larger, and the pressure per unit area of ​​the chip surface is reduced, effectively preventing abnormal craters from occurring during the welding process.

[0053] In other optional embodiments, the search height of the welding head on the chip surface can be increased and the descending speed of the welding head during welding can be slowed down. When the welding head is welding, its power release is a process of slowly climbing and increasing. By increasing the search height of the welding head on the chip surface, extending the power increase time, and adjusting the search height parameter in the parameter interface, the parameter range can be expanded.

[0054] Next, the pressure-welded product can be plastic-sealed in a closed mold cavity with the help of a heating and pressurizing system using a plastic sealing compound or rubber compound, that is, a layer of plastic sealing compound is wrapped around the outside of the device, which can effectively protect the chip and the welding wire from external mechanical damage and environmental pollution, and at the same time transmit the heat generated inside the device when it is working to the outside. Then, the heat sink and tube legs of the plastic-sealed product are tinned, and the product after glue dispensing and baking is stamped into the corresponding shape according to the appearance standard. Next, the electrical and thermal performance tests of the product can be completed according to the test conditions to ensure the high yield and reliability of the product. In actual verification, the electrical properties of the improved current steel nozzle wire bonding product were tested, and the test data showed that there was no abnormality in the electrical properties of the product.

[0055] In some optional embodiments, the current power device product corresponding to the welding result can also be subjected to reliability testing to obtain test results. Optionally, the current steel tip wire bonding product can be subjected to a high temperature reverse bias test (High Temperature Reverse Bias Test, referred to as HTRB) and a 500-hour reliability test, and the test results show that the data is normal, and the test data before and after the product reliability experiment are compared and no abnormality is found.

[0056] like Figure 8-Figure 10 As shown, Figure 8 A comparison chart of threshold voltage test data before and after a product reliability experiment provided in an embodiment of the present application. Threshold voltage (VTH) refers to the threshold voltage of a field effect transistor, wherein the horizontal axis represents the threshold voltage in V and the vertical axis represents the number in units. Figure 8In the figure, the normal distribution diagram represented by the filled bar graph with slash lines and the solid line represents the threshold voltage test data before the product reliability experiment, and the normal distribution diagram represented by the unfilled bar graph and the dotted line represents the threshold voltage test data after the product reliability experiment.

[0057] Fig. 9 A comparison chart of the drain-source breakdown voltage test data before and after a product reliability experiment provided in an embodiment of the present application. The drain-source breakdown voltage (Breakdown Voltage of Drain-Source, referred to as BVDSS) is the voltage at which the reverse biased body diode is broken down and avalanche multiplication causes a large amount of current to flow between the source and the drain. The horizontal axis represents the drain-source breakdown voltage in V, and the vertical axis represents the number in units. Fig. 9 In the figure, the normal distribution diagram represented by the filled bar graph with slash lines and the solid line represents the drain-source breakdown voltage test data before the product reliability experiment, and the normal distribution diagram represented by the unfilled bar graph and the dotted line represents the drain-source breakdown voltage test data after the product reliability experiment.

[0058] Fig.10 This is a comparison chart of the leakage current test data between the gate and the source before and after the reliability test of a product provided in an embodiment of the present application. The leakage current between the gate and the source (Leakage of Source-Gate, referred to as ISGS) refers to the leakage current flowing through the gate under a specific gate-source voltage. The horizontal axis represents the leakage current between the gate and the source, in nA, and the vertical axis represents the number, in units of ‌. Fig.10 In the figure, the normal distribution diagram represented by the filled bar graph with slash lines and the solid line represents the leakage current test data between the gate and the source before the product reliability test, and the normal distribution diagram represented by the unfilled bar graph and the dotted line represents the leakage current test data between the gate and the source after the product reliability test.

[0059] The present application provides a method for processing abnormal crater after welding of thick aluminum wire of power device products, the method comprising: obtaining a preset key parameter group, wherein the preset key parameter group is an optimal parameter group obtained through experimental design, for the lead frame of the bonded chip, after setting the preset key parameter group, using the current steel nozzle to connect the wire according to the preset pressure welding diagram, and obtaining the welding result, wherein the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined according to the slot length of the steel nozzle of the general model. This scheme optimizes and reduces the length of the solder joint by selecting the current steel nozzle with a smaller slot length, and reduces the contact area between the thick aluminum wire and the chip surface to avoid the occurrence of crater; in addition, by selecting the optimized preset key parameter group, a smaller key welding parameter is used under the premise of ensuring that the thrust of the solder joint reaches the product quality standard, thereby reducing the pressure per unit area of ​​the chip surface to avoid the occurrence of crater; at the same time, the search height of the soldering head to the chip surface is increased and the descending speed of the soldering head during welding is slowed down, thereby ensuring the stable output of energy during soldering of the soldering head, improving the stability of the bonding process, effectively solving the abnormal crater after welding of the thick aluminum wire of the power device product, and ensuring the reliability of the product.

[0060] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0061] Fig.11 A structural block diagram of a device for processing abnormal craters after welding thick aluminum wires of a power device product provided in an embodiment of the present application.

[0062] like Fig.11 As shown, the device 1100 for processing abnormal cratering after welding of thick aluminum wire of the power device product includes: The acquisition module 1102 is used to acquire a preset key parameter group; wherein the preset key parameter group is an optimal parameter group obtained through experimental design.

[0063] The welding module 1104 is used to obtain the welding result for the bonded lead frame by setting the preset key parameter group and using the current steel nozzle to connect the welding wires according to the preset pressure welding diagram; wherein the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined based on the slot length of the general model of the steel nozzle.

[0064] Regarding the device in the above embodiment, the specific manner in which each module performs the operation has been described in detail in the embodiment of the method, and will not be elaborated here. Each module in the above-mentioned graph-based retrieval enhancement generation device can be implemented in whole or in part by software, hardware, and a combination thereof. The above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations of the above modules.

[0065] In one embodiment of the present application, a computer device is provided, the computer device comprising a memory and a processor, the memory storing a computer program, and the processor implementing the following steps when executing the computer program: Obtaining a preset key parameter group; wherein the preset key parameter group is an optimal parameter group obtained through experimental design; For the bonded lead frame, after setting the preset key parameter group, the current steel nozzle is used to connect the wires according to the preset pressure welding diagram to obtain the welding result; wherein, the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined based on the slot length of the general model of the steel nozzle.

[0066] In one embodiment of the present application, the groove length of the current steel mouth is 850 μm.

[0067] In one embodiment of the present application, when the processor executes the computer program, the processor further implements the following steps: Conduct full factorial design experiments on multiple candidate parameters to obtain the ranking results of the impact of each candidate parameter on the preset verification results; Selecting a first preset number of candidate parameters from the impact ranking results to obtain a plurality of candidate parameter groups; For each candidate parameter group, the candidate parameter group is screened to obtain a preset key parameter group.

[0068] In one embodiment of the present application, when the processor executes the computer program, the processor further implements the following steps: A second preset number of power device products obtained by selecting the same chip and the same wire bonding method; For each power device product, push and pull force tests are performed according to different candidate parameter groups to obtain test results; The candidate parameter groups that meet the preset conditions in the test results are selected as the preset key parameter groups.

[0069] In one embodiment of the present application, the preset key parameter group includes bonding force, bonding power and bonding time, the bonding force is 750g-950g, the bonding power is 70-85, and the bonding time is 90ms-120ms.

[0070] In one embodiment of the present application, when the processor executes the computer program, the processor further implements the following steps: In the preset parameter setting interface, use the preset key parameter group to set parameters; For the bonded lead frame, the preset key parameter group is set and the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain the welding result.

[0071] In one embodiment of the present application, when the processor executes the computer program, the processor further implements the following steps: A reliability test is performed on the current power device product corresponding to the welding result to obtain the test result.

[0072] The computer device provided in the embodiment of the present application has similar implementation principles and technical effects to those of the above-mentioned method embodiment, and will not be described in detail here.

[0073] In one embodiment of the present application, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented: Obtaining a preset key parameter group; wherein the preset key parameter group is an optimal parameter group obtained through experimental design; For the bonded lead frame, after setting the preset key parameter group, the current steel nozzle is used to connect the wires according to the preset pressure welding diagram to obtain the welding result; wherein, the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined based on the slot length of the general model of the steel nozzle.

[0074] In one embodiment of the present application, the groove length of the current steel mouth is 850 μm.

[0075] In one embodiment of the present application, when the computer program is executed by a processor, the following steps are implemented: Conduct full factorial design experiments on multiple candidate parameters to obtain the ranking results of the impact of each candidate parameter on the preset verification results; Selecting a first preset number of candidate parameters from the impact ranking results to obtain a plurality of candidate parameter groups; For each candidate parameter group, the candidate parameter group is screened to obtain a preset key parameter group.

[0076] In one embodiment of the present application, when the computer program is executed by a processor, the following steps are implemented: A second preset number of power device products obtained by selecting the same chip and the same wire bonding method; For each power device product, push and pull force tests are performed according to different candidate parameter groups to obtain test results; The candidate parameter groups that meet the preset conditions in the test results are selected as the preset key parameter groups.

[0077] In one embodiment of the present application, the preset key parameter group includes bonding force, bonding power and bonding time, the bonding force is 750g-950g, the bonding power is 70-85, and the bonding time is 90ms-120ms.

[0078] In one embodiment of the present application, when the computer program is executed by a processor, the following steps are implemented: In the preset parameter setting interface, use the preset key parameter group to set parameters; For the bonded lead frame, the preset key parameter group is set and the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain the welding result.

[0079] In one embodiment of the present application, when the computer program is executed by a processor, the following steps are implemented: A reliability test is performed on the current power device product corresponding to the welding result to obtain the test result.

[0080] The computer-readable storage medium provided in this embodiment has similar implementation principles and technical effects to those of the above method embodiments, and will not be described in detail here.

[0081] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0082] It is easy to understand that those skilled in the art can combine, split, reorganize, etc. the embodiments of the present application to obtain other embodiments based on the several embodiments provided in the present application, and these embodiments do not exceed the protection scope of the present application.

[0083] The above specific implementation methods further explain in detail the purpose, technical solutions and beneficial effects of the embodiments of the present application. It should be understood that the above are only specific implementation methods of the embodiments of the present application and are not used to limit the protection scope of the embodiments of the present application. Any modifications, equivalent substitutions, improvements, etc. made on the basis of the technical solutions of the embodiments of the present application should be included in the protection scope of the embodiments of the present application.

Claims

1. A method for treating abnormal cratering after welding of thick aluminum wire of power device products, characterized in that: The method comprises: Obtaining a preset key parameter group; wherein the preset key parameter group is an optimal parameter group obtained through experimental design; For the bonded lead frame, the preset key parameter group is set and then the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain the welding result; wherein, the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined based on the slot length of a universal model of steel nozzle.

2. The method according to claim 1, characterized in that The slot length of the current steel mouth is 850 μm.

3. The method according to claim 1 or 2, characterized in that: The generation process of the preset key parameter group includes: Conduct full factorial design experiments on multiple candidate parameters to obtain the ranking results of the impact of each candidate parameter on the preset verification results; Selecting a first preset number of candidate parameters from the impact ranking results to obtain a plurality of candidate parameter groups; For each of the candidate parameter groups, the candidate parameter groups are screened to obtain the preset key parameter groups.

4. The method according to claim 3, characterized in that The screening process of the candidate parameter group to obtain the preset key parameter group includes: A second preset number of power device products obtained by selecting the same chip and the same wire bonding method; Performing push-pull force tests on each of the power device products according to different candidate parameter groups to obtain test results; The candidate parameter group that meets the preset conditions in the test results is selected as the preset key parameter group.

5. The method according to claim 1 or 2, characterized in that: The preset key parameter group includes bonding force, bonding power and bonding time. The bonding force is 750g-950g, the bonding power is 70-85, and the bonding time is 90ms-120ms.

6. The method according to claim 1 or 2, characterized in that: For the bonded lead frame, after setting the preset key parameter group, the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain the welding result, including: In the preset parameter setting interface, the preset key parameter group is used to set parameters; For the bonded lead frame, the preset key parameter group is set and the current steel nozzle is used to perform wire connection according to the preset pressure welding diagram to obtain the welding result.

7. The method according to claim 1 or 2, characterized in that: The method further comprises: A reliability test is performed on the current power device product corresponding to the welding result to obtain a test result.

8. A device for processing abnormal cratering after welding of thick aluminum wire of power device products, characterized in that: The device comprises: An acquisition module, used to acquire a preset key parameter group; wherein the preset key parameter group is an optimal parameter group obtained through experimental design; The welding module is used for obtaining a welding result by setting the preset key parameter group and then using the current steel nozzle to connect the welding wires according to the preset pressure welding diagram for the lead frame that has been bonded; wherein the slot length of the current steel nozzle is much smaller than the preset slot length standard value, and the preset slot length standard value is determined according to the slot length of the steel nozzle of a general model.

9. An electronic device, characterized in that: The electronic device includes a processor and a memory, wherein the memory stores at least one instruction, at least one program, a code set or an instruction set, and the at least one instruction, the at least one program, the code set or the instruction set are loaded and executed by the processor to implement the method for processing abnormal craters after welding thick aluminum wires of power device products as described in any one of claims 1-7.

10. A computer-readable storage medium, characterized in that: The storage medium stores at least one instruction, at least one program, a code set or an instruction set, and the at least one instruction, the at least one program, the code set or the instruction set are loaded and executed by the processor to implement the method for processing abnormal craters after welding thick aluminum wires of power device products as described in any one of claims 1-7.

Images