Electromagnetic structure, electromagnetic assembly, antenna, electronic device, and communication device

Abstract

The application relates to the technical field of communication, and discloses an electromagnetic structure, an electromagnetic assembly, an antenna, an electronic device and a communication device. The electromagnetic structure comprises a first metal layer, a dielectric layer and a second metal layer which are sequentially stacked, one of the first metal layer and the second metal layer is used for feeding, and the other is used for grounding. The first metal layer comprises a plurality of basic units arranged periodically. The electric size of the basic unit is subwavelength, each basic unit comprises a boundary line, and the basic unit is at least partially hollowed out in the area surrounded by the boundary line. The electromagnetic structure is non-resonant etching, does not change the propagation of electromagnetic waves, and the electric size of the basic unit is relatively small. The basic unit in the electromagnetic structure is hollowed out internally, and the boundary line is retained. That is, by reducing the metal in the area surrounded by the boundary line, the current carrying surface is reduced, and the internal magnetic field of the basic unit is weakened. In addition, the basic units are arranged periodically, so that the electromagnetic field of the electromagnetic structure is controlled.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of communication, in particular to an electromagnetic structure, an electromagnetic assembly, an antenna, an electronic device and a communication device. BACKGROUND

[0002] At present, the miniaturization and broadbandization of the antenna can be realized by improving the magnetic permeability of the dielectric material in the antenna. However, the existing high magnetic permeability dielectric material has low action frequency and large magnetic loss, which makes them difficult to be applied to the design of the antenna.

[0003] The artificial magnetic material (also referred to as artificial structural magnetic material) is a kind of artificial super material, which is specifically formed by periodically arranging specific basic units. The electromagnetic structure using the artificial magnetic material can expand the magneto-electric properties and improve the magnetic permeability without increasing the loss. Fig. 1(a) shows a schematic diagram of a module of a mobile phone M. Fig. 1(b) shows a schematic diagram of a structure of an electromagnetic structure S. As shown in Figs. 1(a) and 1(b), the mobile phone M includes an antenna A, and the electromagnetic structure S in the antenna A includes a first metal layer 10, a dielectric layer 20 and a second metal layer 30 which are sequentially stacked. One of the first metal layer 10 and the second metal layer 30 is used for feeding, and the other is used for grounding. The dielectric layer 20 can be a conventional dielectric or air. The artificial magnetic material is formed on the first metal layer 10 and / or the second metal layer 30. As shown in Fig. 1(b), D1 is the magnetic field direction, D2 is the electric field direction, and D3 is the electromagnetic wave transmission direction. Based on this, how to design the artificial magnetic material in the antenna becomes a technical problem to be solved by those skilled in the art. SUMMARY

[0004] Therefore, the present application provides an electromagnetic structure, an electromagnetic assembly, an antenna, an electronic device and a communication device. The electromagnetic structure includes a first metal layer, a dielectric layer and a second metal layer which are sequentially stacked, one of the first metal layer and the second metal layer is used for feeding, and the other is used for grounding. The first metal layer includes a plurality of basic units arranged periodically. The electric size of the basic unit is sub-wavelength, each basic unit includes a boundary line, and the basic unit is at least partially hollow in the area surrounded by the boundary line. The above electromagnetic structure is non-resonant etching, which does not change the propagation of the electromagnetic wave, and the electric size is relatively small. The basic unit in the electromagnetic structure is hollowed out the internal metal and retains the boundary line. That is, by reducing the metal in the area surrounded by the boundary line, the current carrying surface is reduced, and the internal magnetic field of the basic unit is weakened. In addition, the basic units are arranged periodically to control the electromagnetic field of the electromagnetic structure.

[0005] The first aspect of the present application provides an electromagnetic structure, wherein the electromagnetic structure comprises a first metal layer, a dielectric layer and a second metal layer which are sequentially stacked along a stacking direction. One of the first metal layer and the second metal layer is used for feeding, and the other is used for grounding. The first metal layer comprises a plurality of basic units arranged periodically in an arrangement plane. An electrical size of the basic unit is sub-wavelength. Each basic unit comprises a boundary line, and the basic unit is at least partially hollow in a region enclosed by the boundary line. The arrangement plane is perpendicular to the stacking direction.

[0006] The electrical size is a length related to a wavelength. In some application scenarios, the electrical size can be represented by a ratio of a physical size to the wavelength of the transmitted electromagnetic wave. The electrical size of the basic unit is sub-wavelength, i.e., the electrical size of the basic unit is less than one fourth of the wavelength. Generally, the electrical size is at least one fourth of the wavelength or more to form a resonance. That is, in the implementation manner of the present application, the electromagnetic structure is a non-resonant structure.

[0007] The basic unit is at least partially hollow in the region enclosed by the boundary line, which means that the dielectric layer can be exposed through the first metal layer in the region enclosed by the boundary line, i.e., in the region enclosed by the boundary line, the user can observe the dielectric layer through the first metal layer.

[0008] The above electromagnetic structure is a non-resonant etching, which does not change the propagation of the electromagnetic wave, and the electrical size of the basic unit is relatively small. The basic unit in the electromagnetic structure is hollowed in the internal metal, and the boundary line is reserved. That is, by reducing the metal in the region enclosed by the boundary line, the current carrying surface is reduced, and the internal magnetic field of the basic unit is weakened. In addition, the basic units are arranged periodically to control the electromagnetic field of the electromagnetic structure.

[0009] In some possible implementation manners of the above first aspect, the boundary line comprises two first boundary segments and a second boundary segment. Each first boundary segment has an extension direction parallel to a magnetic field direction of the electromagnetic structure. The second boundary segment has an extension direction intersecting a corresponding magnetic field direction of the electromagnetic structure, and the second boundary segment is used to connect the two first boundary segments. The magnetic field intensity of the whole boundary line is relatively low, but the magnetic field intensity of the corresponding region of the second boundary segment of the boundary line is relatively high.

[0010] In some implementation manners, the second boundary segment extends along a straight line, and the extension direction of the second boundary segment is perpendicular to the corresponding magnetic field direction of the electromagnetic structure.

[0011] The above electromagnetic structure realizes the restraint of the current through the first boundary segment and the second boundary segment, and thus forms a magnetic field with a relatively weak internal magnetic field intensity in the electromagnetic structure.

[0012] In some possible implementation modes of the first aspect, the second boundary segment extends in a reciprocating bending manner in the arrangement plane. In the electromagnetic structure, the boundary line in the basic unit extends in a reciprocating bending manner multiple times. Due to the current reversal at the bending position, the magnetic field corresponding to the current bending out can be reversed and offset, thereby enhancing the weakening of the internal magnetic field of the structure and achieving higher effective permeability.

[0013] In some possible implementation modes of the first aspect, each basic unit further includes an internal line located in the region surrounded by the boundary line, and the internal line extends in a reciprocating bending manner in the arrangement plane. In the electromagnetic structure, as the structure of the internal line in the basic unit becomes more complex, the magnetic field strength corresponding to the basic unit gradually decreases, and the equivalent magnetic permeability corresponding to the basic unit gradually increases.

[0014] In some possible implementation modes of the first aspect, the internal line includes two first internal segments and a second internal segment. Each first internal segment is coupled to one of the second boundary segments. The second internal segment is used to connect the two first internal segments between the two second internal segments in a head-to-tail manner. The internal line structure is simple, and can effectively adjust the internal magnetic field corresponding to the basic unit, thereby effectively improving the relative magnetic permeability of the electromagnetic structure.

[0015] In some possible implementation modes of the first aspect, the number of internal lines is at least two, and the at least two internal lines are relatively rotated and superimposed on each other. The electromagnetic structure has rotational symmetry. The electromagnetic structure can be applied to miniaturization and broadband of antennas and devices that require fields with phase difference or different field directions to achieve certain specific functions in multi-field cooperation.

[0016] In some possible implementation modes of the first aspect, the distance between the adjacent segments of the at least two internal lines is the same.

[0017] In some possible implementation modes of the first aspect, the types of the plurality of basic units are at least two, and each type of basic unit is arranged periodically in the arrangement plane. In the electromagnetic structure, the types of the basic units are various, which increases the diversity of the electromagnetic structure scheme and facilitates expansion of the application scenarios of the electromagnetic structure.

[0018] In some possible implementation modes of the first aspect, the arrangement plane includes a first direction and a second direction intersecting each other, and the plurality of basic units are periodically arranged in the first direction and / or the second direction.

[0019] In some possible implementation modes of the first aspect, the first direction is perpendicular to the second direction.

[0020] In some possible implementation modes of the first aspect, the first direction is parallel to a magnetic field direction of the electromagnetic structure. That is, in some of the implementation modes, the plurality of basic units are periodically arranged along the magnetic field direction of the electromagnetic structure.

[0021] In some possible implementation modes of the first aspect, the contour of the boundary line comprises any one of a square, a rectangle, a triangle, a circle, and an ellipse. In the electromagnetic structure, the basic units have various shapes, which improves the diversity of the electromagnetic structure scheme and facilitates expansion of the application scenarios of the electromagnetic structure.

[0022] The second aspect of the present application provides an electromagnetic assembly, wherein the electromagnetic assembly comprises two electromagnetic structures of the first aspect and at least one of the possible implementation modes of the first aspect. The two electromagnetic structures are stacked. It can be understood that the electromagnetic assembly can also be understood as an electromagnetic structure. The diversity of the electromagnetic structure scheme is further increased, and the application range of the electromagnetic structure is facilitated to be expanded.

[0023] In some possible implementation modes of the second aspect, in the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the first metal layer of the other electromagnetic structure. That is, the two electromagnetic structures in the electromagnetic assembly are stacked face to face.

[0024] In some possible implementation modes of the second aspect, in the two electromagnetic structures, the second metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure. That is, the two electromagnetic structures in the electromagnetic assembly are stacked back to back.

[0025] In some possible implementation modes of the second aspect, the second metal layers of the two electromagnetic structures are integrally formed. That is, when the two electromagnetic structures in the electromagnetic assembly are stacked back to back, the second metal layers of the two electromagnetic assemblies can be integrally formed.

[0026] In some possible implementation modes of the second aspect, in the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure. That is, the two electromagnetic structures in the electromagnetic assembly are stacked in the same direction.

[0027] In some possible implementation modes of the first aspect, in the two electromagnetic structures, the first metal layer of one electromagnetic structure serves as the second metal layer of the other electromagnetic structure. That is, the two electromagnetic structures in the electromagnetic assembly are stacked in the same direction. In addition, the first metal layer of the lower electromagnetic structure can serve as the second metal layer of the upper electromagnetic structure.

[0028] In some possible implementation manners of the second aspect, the relative relationship of the two electromagnetic structures includes any one of the following: the two electromagnetic structures are of the same structure and the same size; or the two electromagnetic structures are of the same structure and in a proportional relationship in size; or the two electromagnetic structures are of different structures.

[0029] In some possible implementation manners of the second aspect, the superposition manner of the two electromagnetic structures includes any one of the following: the first metal layer in the two electromagnetic structures points in the same direction as the second metal layer; or the first metal layer in the two electromagnetic structures points in the opposite direction as the second metal layer.

[0030] The third aspect of the present application provides an antenna, wherein the antenna includes the electromagnetic structure in the first aspect and any one of the possible implementation manners of the first aspect.

[0031] In some possible implementation manners of the third aspect, the antenna includes any one of a patch antenna, a cavity antenna, a slot antenna, and a strip antenna.

[0032] The fourth aspect of the present application provides an electronic device, wherein the electronic device includes the antenna in the third aspect and any one of the possible implementation manners of the third aspect. The electronic device includes, but is not limited to, at least one of a mobile phone, a watch, a tablet, a notebook computer, and an internet of things (IOT).

[0033] The fifth aspect of the present application provides a communication device, wherein the communication device includes the antenna in the third aspect and any one of the possible implementation manners of the third aspect. The communication device includes, but is not limited to, a base station, such as a small base station, a medium base station, and a large base station. BRIEF DESCRIPTION OF DRAWINGS

[0034] FIG. 1(a) shows a schematic diagram of a module of a mobile phone M;

[0035] FIG. 1(b) shows a schematic diagram of an electromagnetic structure S;

[0036] FIG. 2(a) shows a perspective view of an antenna A' in some technical solutions of the present application;

[0037] FIG. 2(b) shows a perspective view of an open resonant ring 40' in an electromagnetic structure S' in some technical solutions of the present application;

[0038] Figure 3 FIG. 3 shows a circuit diagram corresponding to the electromagnetic structure S' in some embodiments of the present application;

[0039] Figure 4 FIG. 4 shows a graph of the equivalent relative permeability variation corresponding to the electromagnetic structure S' in some embodiments of the present application;

[0040] Figure 5 Fig. 7(a) shows a perspective view of the electromagnetic structure S in some embodiments of the present application;

[0041] Figure 6 Fig. 7(a) shows a perspective view of the electromagnetic structure S in some embodiments of the present application;

[0042] Fig. 7(a) shows a perspective view of the electromagnetic structure S in some embodiments of the present application;

[0043] Fig. 7(a) shows a perspective view of the electromagnetic structure S in some embodiments of the present application;

[0044] Figure 8 Fig. 7(a) shows a perspective view of the electromagnetic structure S in some embodiments of the present application;

[0045] Figure 9 Fig. 7(a) shows a perspective view of the electromagnetic structure S in some embodiments of the present application;

[0046] Figure 10 Fig. 7(a) shows a perspective view of the electromagnetic structure S in some embodiments of the present application;

[0047] Fig. 11(a) shows a schematic diagram of some conventional materials;

[0048] Fig. 11(a) shows a schematic diagram of some conventional materials;

[0049] Fig. 11(a) shows a schematic diagram of some conventional materials;

[0050] Fig. 11(a) shows a schematic diagram of some conventional materials;

[0051] Fig. 12(a) shows a schematic diagram of a simulation of a conventional material being passed through by a TEM wave in some embodiments of the present application;

[0052] Fig. 12(a) shows a schematic diagram of a simulation of a conventional material being passed through by a TEM wave in some embodiments of the present application;

[0053] Fig. 12(a) shows a schematic diagram of a simulation of a conventional material being passed through by a TEM wave in some embodiments of the present application;

[0054] Fig. 12(a) shows a schematic diagram of a simulation of a conventional material being passed through by a TEM wave in some embodiments of the present application;

[0055] Figure 13(a) shows a schematic diagram of the electromagnetic structure S being passed through by a TEM wave in some embodiments of the application;

[0056] Figure 13(b) shows the corresponding magnetic field direction of Figure 13(a);

[0057] Figure 13(c) shows a schematic diagram of the distribution of the magnetic field within a basic unit of the structure of Figure 13(a) over a wide frequency band;

[0058] Figure 14 Figure 14 shows the variation of the magnetic field strength and the equivalent relative magnetic permeability in different application scenarios in some embodiments of the application;

[0059] Figure 15 Figure 15 shows a schematic diagram of the structure of a mobile phone M in some embodiments of the application;

[0060] Figure 16 Figure 16 shows a perspective view of a patch antenna Aa in some embodiments of the application;

[0061] Figure 17(a) shows a top view of the patch antenna Aa in some embodiments of the application;

[0062] Figure 17(b) shows a bottom view of the patch antenna Aa in some embodiments of the application;

[0063] Figure 18(a) shows a schematic diagram of the magnetic field distribution of the patch antenna Aa in some embodiments of the application;

[0064] Figure 18(b) shows a schematic diagram of the magnetic field distribution of the patch antenna Aa in some other technical solutions;

[0065] Figure 19 Figure 19 shows a comparison of the S parameters and the radiation efficiency of the patch antenna Aa in some embodiments of the application and the patch antenna in some other technical solutions;

[0066] Figure 20(a) shows a perspective view of an electromagnetic structure Sa in some embodiments of the application;

[0067] Figure 20(b) shows a perspective view of an electromagnetic structure Sa in some other embodiments of the application;

[0068] Figure 21 Figure 21 shows a top view of the electromagnetic structure Sa in some embodiments of the application;

[0069] Figure 22(a) shows a schematic diagram of the structure of a basic unit Ua in the electromagnetic structure Sa in some embodiments of the application; Figure 21 Figure 22(b) shows a schematic diagram of the structure of another basic unit Ua in the electromagnetic structure Sa in some embodiments of the application;

[0070] Figure 21 Figure 22(b) shows a schematic diagram of the structure of another basic unit Ua in the electromagnetic structure Sa in some embodiments of the application; Figure 22(b) shows a schematic diagram of the structure of another basic unit Ua in the electromagnetic structure Sa in some embodiments of the application;

[0071] Figure 22(c) shows Figure 21 Figure 22(d) shows a structure diagram of another basic unit Ua in the electromagnetic structure Sa;

[0072] Figure 23(a) shows a top view of the boundary line 100a in some embodiments of the present application;

[0073] Figure 23(b) shows a schematic diagram of the current flowing in the boundary line 100a in Figure 23(a);

[0074] Figure 23(c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of the present application;

[0075] Figure 24(a) shows a top view of the boundary line 100a in some embodiments of the present application;

[0076] Figure 24(b) shows a schematic diagram of the current flowing in the boundary line 100a in Figure 24(a);

[0077] Figure 24(c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of the present application;

[0078] Figure 25(a) shows a top view of the boundary line 100a in some embodiments of the present application;

[0079] Figure 25(b) shows a schematic diagram of the current flowing in the boundary line 100a in Figure 25(a);

[0080] Figure 25(c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of the present application;

[0081] Figure 26 Figure 26 shows the magnetic field intensity and the equivalent permeability corresponding to different forms of the basic unit Ua in some embodiments of the present application;

[0082] Figure 27 Figure 27(a) shows a top view of the boundary line 100a in some embodiments of the present application;

[0083] Figure 28 Figure 28(a) shows a top view of the boundary line 100a in some embodiments of the present application;

[0084] Figure 29 Figure 29 shows a perspective view of the electromagnetic structure Sa in some embodiments of the present application;

[0085] Figure 30 Figure 30 shows a perspective view of the electromagnetic structure Sa in some embodiments of the present application;

[0086] Figure 31(a) shows a top view of the basic unit Ua in some embodiments of the present application;

[0087] Figure 31(b) shows a schematic diagram of the current flow in the basic unit Ua in Figure 31(a);

[0088] Figure 31(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the application;

[0089] Figure 32(a) shows a top view of the basic unit Ua in some embodiments of the application;

[0090] Figure 32(b) shows a schematic diagram of the current flow in the basic unit Ua in Figure 32(a);

[0091] Figure 32(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the application;

[0092] Figure 33(a) shows a top view of the basic unit Ua in some embodiments of the application;

[0093] Figure 33(b) shows a schematic diagram of the current flow in the basic unit Ua in Figure 33(a);

[0094] Figure 33(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the application;

[0095] Figure 34 Figure 34 shows the magnetic field strength and the equivalent permeability corresponding to different forms of the basic unit Ua in some embodiments of the application;

[0096] Figure 35(a) shows a top view of the dual-fed dual-polarized / circularly polarized antenna Aa in some embodiments of the application;

[0097] Figure 35(b) shows a bottom view of the dual-fed dual-polarized / circularly polarized antenna in some embodiments of the application;

[0098] Figure 36 Figure 36 shows a perspective view of the electromagnetic structure Sa in some embodiments of the application;

[0099] Figure 37(a) shows a schematic diagram of the basic unit Ua in some embodiments of the application;

[0100] Figure 37(b) shows a schematic diagram of the basic unit Ua in some embodiments of the application;

[0101] Figure 37(c) shows a schematic diagram of the basic unit Ua in some embodiments of the application;

[0102] Figure 38 Figure 38 shows a perspective view of the electromagnetic structure Sa in some embodiments of the application;

[0103] Figure 39 Figure 39 shows a perspective view of the electromagnetic structure Sa in some embodiments of the application;

[0104] Figure 40 An exploded view of the antenna Aa in some embodiments of the application is shown;

[0105] Figure 41 An exploded view of the antenna Aa in some embodiments of the application is shown; Figure 40 A perspective view of the corresponding electromagnetic assembly is shown;

[0106] Figure 42(a) shows a diagram of the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application;

[0107] Figure 42(b) shows a diagram of the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application;

[0108] Figure 42(c) shows a diagram of the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application;

[0109] Figure 42(d) shows a diagram of the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application;

[0110] Figure 43 An exploded view of the antenna Aa in some embodiments of the application is shown;

[0111] Figure 44 An exploded view of the antenna Aa in some embodiments of the application is shown; Figure 43 A perspective view of the corresponding electromagnetic assembly is shown;

[0112] Figure 45 An exploded view of the antenna Aa in some embodiments of the application is shown;

[0113] Figure 46 An exploded view of the antenna Aa in some embodiments of the application is shown; Figure 45 A perspective view of the corresponding electromagnetic assembly is shown;

[0114] Figure 47(a) shows a top view of the slot antenna Ab in some embodiments of the application;

[0115] Figure 47(b) shows a bottom view of the slot antenna Ab in some embodiments of the application;

[0116] Figure 48(a) shows a top view of the cavity antenna Ac in some embodiments of the application;

[0117] Figure 48(b) shows a bottom view of the cavity antenna Ac in some embodiments of the application;

[0118] Figure 49 The application scenario of the cavity antenna in the notebook in some embodiments of the present application is shown. DETAILED DESCRIPTION

[0119] In order to make the purpose, technical solutions and advantages of the present application clearer, the embodiments of the present application will be further described in detail below with reference to the drawings.

[0120] The present application provides an electromagnetic structure. The electromagnetic structure in the present application can be applied to the antenna of an electronic device. The electronic device can include, but is not limited to, any one of a mobile phone, a watch, a tablet, a notebook computer and an Internet of Things product. In addition, the electromagnetic structure in the present application can also be applied to the antenna of a communication device. The communication device can include, but is not limited to, a base station, such as a small base station, a medium base station and a large base station, etc.

[0121] In order to facilitate understanding, the terms involved in the present application are explained before the technical solutions of the present application are described.

[0122] Magnetodielectric materials (MDM) are materials that exhibit both dielectric and magnetic properties. They can also be referred to as electromagnetic structures that exhibit both dielectric and magnetic properties. The electromagnetic structure can be a natural material or an artificial magnetic material that exhibits magnetism when placed in a magnetic field or electric current by setting a specific structure.

[0123] Magnetic permeability (MP) is a physical quantity that characterizes the magnetic properties of a magnetic medium. Magnetic permeability represents the resistance of a coil flowing through a current in space or in a magnetic core to generate magnetic flux or its ability to conduct magnetic lines of force in a magnetic field.

[0124] Relative permeability (RP) is a relative physical quantity that characterizes the magnetic properties of a magnetic medium. Relative permeability represents the ratio of the magnetic permeability of the medium to the magnetic permeability of a vacuum.

[0125] Effective permeability (EP) refers to the magnetic properties of a magnetic medium that are not uniform. When the magnetic medium is treated as a whole, an overall magnetic permeability is obtained.

[0126] Effective relative permeability (ERP) refers to the magnetic properties of a magnetic medium that are not uniform. When the magnetic medium is treated as a whole, an overall relative magnetic permeability is obtained.

[0127] Dielectric constant (DC), which can reflect the dielectric properties or polarization properties of the dielectric under the action of the electrostatic field.

[0128] Dielectric loss tangent is a physical quantity representing the size of dielectric loss of the dielectric material after the application of an electric field.

[0129] Magnetic loss tangent is a physical quantity representing the size of dielectric loss of the magneto-dielectric material after the application of a magnetic field.

[0130] In some application scenarios, the magneto-dielectric material can be an isotropic magneto-dielectric material, or can be understood as a magneto-dielectric material with the same dielectric constant and relative magnetic permeability in all directions. At this time, any direction of the magneto-dielectric material can be understood as the direction corresponding to the maximum relative magnetic permeability.

[0131] In some application scenarios, the magneto-dielectric material can also be an anisotropic magneto-dielectric material, or can be understood as a magneto-dielectric material with different dielectric constants in three mutually perpendicular directions in space, or: a magneto-dielectric material with different relative magnetic permeabilities in three mutually perpendicular directions in space.

[0132] In some application scenarios, the magneto-dielectric material is a magneto-dielectric material with different relative magnetic permeabilities in at least two directions. The different relative magnetic permeabilities in at least two directions can be understood as: the relative magnetic permeability of the magneto-dielectric material in two or more directions in three mutually perpendicular directions (or can be understood as in three-dimensional directions) is different. For example, the magneto-dielectric material can be a magneto-dielectric material with different relative magnetic permeabilities in all directions, or a magneto-dielectric material with different relative magnetic permeabilities in only one direction and other directions, or a magneto-dielectric material with different relative magnetic permeabilities in multiple directions and the same relative magnetic permeabilities in the remaining directions, and so on. The magneto-dielectric material always has a direction, and the relative magnetic permeability in this direction is greater than or equal to the relative magnetic permeability in any other direction. This direction is the direction corresponding to the maximum relative magnetic permeability of the dielectric structure.

[0133] The magneto-dielectric material can be a 2D anisotropic magneto-dielectric material formed by pressing a nanomagnetic film and a thicker dielectric film, or a bulk magneto-dielectric material formed by mixing ceramic and ferrite powder, such as MAGTREX TM 555, which is a Rogers artificial composite material naturally having magnetism, and having stronger magnetism in two directions and weaker or no magnetism in another direction. The maximum relative magnetic permeability can reach 6. Each direction has electrical properties, and the difference in electrical properties is not large. The ratio of the maximum dielectric constant to the maximum relative magnetic permeability is close to 1. The magnetic loss tangent is less than 0.05, the dielectric loss tangent is about 0.01, and the working frequency is less than 1 GHz.

[0134] It should be noted that the magnetic loss refers to a part of energy of a magnetic material irreversibly converted into heat in a magnetization process and a demagnetization process, and the energy lost is referred to as the magnetic loss. The dielectric loss refers to a phenomenon that a dielectric itself generates heat due to consumption of part of electric energy in an alternating electric field.

[0135] A larger scaling factor (related to the magnetic permeability and the dielectric constant), for example, the scaling factor is close to 6, can reduce the length of the antenna. Further, a larger relative magnetic permeability can greatly improve the inductance value of the antenna, thereby improving the efficiency and bandwidth of the antenna.

[0136] Physical length (PL): refers to the mechanical length or geometric length.

[0137] Electrical length (EL): a length related to the wavelength. Generally, the electrical length is at least one quarter of the wavelength or more to form resonance. In some application scenarios, the electrical length can be represented by the ratio of the physical length to the wavelength of the transmitted electromagnetic wave, as shown in formula (1):

[0138]

[0139] Wherein, L' is the electrical length, L is the physical length, and λ is the wavelength of the electromagnetic wave.

[0140] It can be understood that the relationship between the physical length and the electrical length needs to consider the frequency and the medium substrate (medium). For example, the resonant component is a half-wavelength resonant structure, that is, the electrical length of the resonant component is always half the wavelength, which is irrelevant to the medium frequency. However, the difference between the physical length and the electrical length is that the physical length is related to the medium frequency. For example, when the medium frequency is 3 GHz, the physical length of the resonant component is 100 mm in air medium; and when the medium with a relative dielectric constant of 4 is used as the substrate of the resonant component, the physical length of the resonant component is 50 mm.

[0141] It should be noted that the magnetic loss refers to a part of energy of a magnetic material irreversibly converted into heat in a magnetization process and a demagnetization process, and the energy lost is referred to as the magnetic loss. The dielectric loss refers to a phenomenon that a dielectric itself generates heat due to consumption of part of electric energy in an alternating electric field. A larger scaling factor (for example, the scaling factor is close to 6) can reduce the size of the antenna. Further, a larger relative magnetic permeability can greatly improve the inductance value of the antenna, thereby improving the efficiency and bandwidth of the antenna.

[0142] After the technical terms related to the present application are described, the technical solutions related to the present application will be described in detail.

[0143] To solve the problems in the background art, some technical solutions of the present application provide an antenna A', the electromagnetic structure S' in the antenna A' increases inductance through resonance, and improves the equivalent relative permeability of the electromagnetic structure S'. The electromagnetic structure S' in the present application will be described in detail below. Fig. 2(a) shows a perspective view of the antenna A' in some technical solutions of the present application. Fig. 2(b) shows a perspective view of the open resonant ring 40' in the electromagnetic structure S' in some technical solutions of the present application. Figure 3 A circuit diagram corresponding to the electromagnetic structure S' in some embodiments of the present application is shown.

[0144] In combination with Fig. 2(a), Fig. 2(b) and Figure 3 It can be seen that the electromagnetic structure S' includes a first metal layer 10', a dielectric layer 20', a second metal layer 30', and a plurality of open resonant rings 40'. Among them, the first metal layer 10', the dielectric layer 20', and the second metal layer 30' are sequentially stacked. Among them, the first metal layer 10' can be used for feeding, that is, the first metal layer 10' is a radiation surface, and the second metal layer 30' can be used for grounding, that is, the second metal layer 30' is a ground surface. The dielectric layer 20' can be a dielectric material or air, and the open resonant ring 40' can be a metal material. The plurality of open resonant rings 40' are arranged along the stacking direction and periodically arranged in the dielectric layer 20'. In the electromagnetic structure S', the magnetic field direction is the direction through the open resonant ring 40', for example, the D1 direction in Fig. 2(a). The electric field direction is the direction from the second metal layer 30' to the first metal layer 10', for example, the D2 direction in Fig. 2(a). The electromagnetic wave transmission direction is perpendicular to the magnetic field direction and the electric field direction, for example, the D3 direction in Fig. 2(a). In some implementations, the magnetic field direction D1, the electric field direction D2, and the electromagnetic wave transmission direction D3 are perpendicular to each other.

[0145] As Figure 3 shown, the open resonant ring 40' is a kind of magnetic resonant loop when resonating, so that the equivalent inductance of the electromagnetic structure S' is increased. The electromagnetic structure S' changes the electromagnetic field of its filled space based on resonance. This phenomenon can be equivalent to a kind of magnetic medium, thereby improving the equivalent permeability of the electromagnetic structure S' at the resonant frequency.

[0146] The variation of the equivalent relative permeability of the electromagnetic structure S' with frequency will be described below. Figure 4 The variation of the equivalent relative permeability of the electromagnetic structure S' with frequency is shown in some embodiments of the present application. As Figure 4 shown, the equivalent relative permeability of the electromagnetic structure S' in the frequency range of 3.2GHz-3.3GHz is greater than 1. The equivalent relative permeability of the electromagnetic structure S' at the resonant frequency (3.3GHz) is about 8.

[0147] To facilitate understanding of the miniaturization degree of the electromagnetic structure S', the physical size and the electrical size of the open resonant loop 40' are described below. As shown in FIG. 2(b), the physical size of the open resonant loop 40' can be calculated by formula (2):

[0148] lp= 2a + 2b - g (2)

[0149] wherein, lp represents the physical size; a represents the height of the open resonant loop 40'; b represents the width of the open resonant loop 40'; and g represents the opening size on the open resonant loop 40'.

[0150] The electrical size le of the open resonant loop 40' can be calculated according to the aforementioned formula (1), based on which the electrical size le of the open resonant loop 40' is positively correlated with the physical size lp of the open resonant loop 40'.

[0151] It can be understood that the open resonant loop 40' as a basic unit in the electromagnetic structure S' is a resonant structure. To achieve resonance, the electrical size le of the open resonant loop 40' needs to meet certain requirements, for example, the electrical size le of the open resonant loop 40' is half a wavelength. According to the aforementioned formula (1), the electrical size le of the open resonant loop 40' is positively correlated with the physical size lp of the open resonant loop 40'. Based on this, when the electrical size le of the open resonant loop 40' is half a wavelength, the physical size lp of the open resonant loop 40' is relatively large. Since the physical size lp of the open resonant loop 40' is positively correlated with the height a in the open resonant loop 40' and the width b in the open resonant loop 40', therefore, when the electrical size le of the open resonant loop 40' is relatively large, the height a in the open resonant loop 40' and / or the width b in the open resonant loop 40' is large.

[0152] On the one hand, although the above electromagnetic structure can improve the equivalent permeability, the size of the open resonant loop 40' is difficult to adjust, making it difficult to apply such electromagnetic structure in terminal antennas. To achieve resonance, the electrical size of the open resonant loop 40' in the electromagnetic structure S' is relatively large, the physical size of the open resonant loop 40' is large, and therefore, the arrangement of the open resonant loop 40' in the electromagnetic structure S' is relatively large. In some application scenarios, the width b of the open resonant loop 40' is small, and the height a of the open resonant loop 40' is large, which makes the height of the antenna along the z-axis direction large, and the miniaturization of the antenna cannot be achieved. In other application scenarios, the height a of the open resonant loop 40' is small, and the width b of the open resonant loop 40' is large, which makes the size of the antenna in the direction perpendicular to the z-axis direction large, which leads to the difficulty in achieving the periodic arrangement of the open resonant loop 40', and further leads to the low relative permeability of the electromagnetic structure S'. On the other hand, the operating bandwidth of the above electromagnetic structure S' is relatively narrow, and only at a single frequency point (for example Figure 4a magnetic material with high permeability at the equivalent frequency (e.g., 3.3 GHz in the above example).

[0153] To solve the problem that the aforementioned electromagnetic structure is difficult to apply to a terminal antenna and has a relatively narrow operating bandwidth, the present application also provides an electromagnetic structure that will be described in detail below in combination with the accompanying drawings. The electromagnetic structure increases inductance through resonance and thus improves the corresponding equivalent relative permeability. The electromagnetic structure in the present application will be described in detail below in combination with the accompanying drawings. Figure 5 A structural diagram of an electromagnetic structure S" in some embodiments of the present application is shown. Figure 6 An equivalent relative permeability curve of the electromagnetic structure S" in some embodiments of the present application is shown.

[0154] As shown in Figure 5 the electromagnetic structure S" includes a first metal layer 10", a dielectric layer 20", and a second metal layer 30" arranged in sequence. The first metal layer 10" can be grounded, the dielectric layer 20" can be a dielectric material or air, and the second metal layer 30" can be fed. The first metal layer 10" is etched with a complementary metal opening resonant ring, and the third metal layer 30" is etched with a serpentine line wrapped in a metal square frame. Moreover, the serpentine line needs to be bent to a resonant electrical size. The third metal layer 30" of this structure does not have the potential to achieve high equivalent permeability (up to 4). The third metal layer 30" also needs to cooperate with the defect opening resonant ring periodic structure etched on the first metal layer 10" to control the electromagnetic field during resonance. As shown in Figure 6 the above electromagnetic structure S" can achieve an equivalent permeability greater than 1 near the resonant frequency.

[0155] The equivalent permeability of the above electromagnetic structure S" is relatively low, and there is a jump in equivalent permeability at the resonant frequency. In addition, near the resonant point 3 GHz, the equivalent relative permeability suddenly changes before and after, is unstable, increases the design difficulty of the magnetic medium parameter to determine the physical size of the antenna, and thus increases the design difficulty of the antenna. For example, the antenna is a wideband antenna, and each resonant frequency of the wideband antenna will be offset due to the instability of the permeability. In addition, the electromagnetic structure of the double-layer etched pattern is limited in the application of terminal antennas. For example, a terminal device generally includes a ground plane, so the ground plane can be used for etching or loading of the equivalent magnetic material structure, but the antenna surface is generally relatively small in length and basically has no etching / loading space. Therefore, the application scenarios that can etch on both the ground plane and the antenna surface are relatively few, which reduces the application range of the electromagnetic structure S".

[0156] To solve the problem of the relatively low equivalent permeability of the electromagnetic structure, the application provides an electromagnetic structure. The electromagnetic structure realizes normal propagation of electromagnetic waves and improves the equivalent relative permeability in a non-resonant manner. The technical solutions of the application will be described in detail below with reference to the drawings. FIG. 7(a) shows a perspective view of an electromagnetic structure S in some embodiments of the application. FIG. 7(b) shows a perspective view of part of the electromagnetic structure S in some embodiments of the application.

[0157] As shown in FIGS. 7(a) and 7(b), in some embodiments of the application, the electromagnetic structure S includes a first metal layer 10, a dielectric layer 20 and a second metal layer 30 stacked in sequence along a stacking direction, one of the first metal layer 10 and the second metal layer 30 is fed, and the other is grounded. The first metal layer 10 includes a plurality of basic units U arranged periodically in a first plane. The electric size of the basic unit U is sub-wavelength, which is much smaller than the working wavelength, so the electromagnetic structure S is a non-resonant unit. Each basic unit U includes a boundary line 100, and the basic unit U is at least partially hollow in the area surrounded by the boundary line 100. The first plane is perpendicular to the stacking direction.

[0158] In some embodiments of the application, the basic unit U is at least partially hollow in the area surrounded by the boundary line, which means that the dielectric layer 20 can be exposed through the first metal layer 10 in the area surrounded by the boundary line, that is, in the area surrounded by the boundary line, the user can observe the dielectric layer 20 through the first metal layer 10.

[0159] In some embodiments of the application, the first metal layer 10 is fed, and the second metal layer 30 is grounded.

[0160] In some other embodiments of the application, the first metal layer 10 is grounded, and the second metal layer 30 is fed.

[0161] In some embodiments of the application, the first metal layer 10 and the second metal layer 30 can be any material that can realize effective transmission of electromagnetic waves. The dielectric layer 20 can be a dielectric material or air. The application does not make specific limitations in this regard.

[0162] In some implementations, the basic units U in the first metal layer 10 of the electromagnetic structure S can be the same. In alternative other implementations, the basic units U in the first metal layer 10 of the electromagnetic structure S can also be different. For example, the basic units U in the first metal layer 10 can be similar in structure but different in size, or the basic units U in the first metal layer 10 can also be different in structure. The application does not make specific limitations in this regard.

[0163] The electromagnetic structure S includes a first metal layer 10, a dielectric layer 20 and a third metal layer 30 which are sequentially stacked. The basic unit in the first metal layer 10 includes a boundary line 100. The boundary line 100, the dielectric layer 20 and the third metal layer 30 are arranged in a periodic manner, and cooperate to realize normal propagation of electromagnetic waves in the electromagnetic structure S. At the same time, the region surrounded by the boundary line 100 is at least partially hollowed out to attenuate the magnetic field between the first metal layer 10 and the second metal layer 30, thereby improving the equivalent relative permeability of the electromagnetic structure S. It is worth noting that the electromagnetic structure does not need to resonate through the basic unit U to improve the equivalent relative permeability, so the electric size corresponding to the basic unit U can be relatively small, that is, the physical size of the structure corresponding to the basic unit U can be effectively reduced, which facilitates the miniaturization of the basic unit U, that is, the miniaturization of the electromagnetic structure S, that is, the miniaturization of the communication device (such as an antenna) using the electromagnetic structure S.

[0164] It is worth noting that the equivalent relative permeability of the electromagnetic structure S in the present application can be simulated by the change of the magnetic field strength inside the electromagnetic structure S. The following will be described in detail with reference to the accompanying drawings.

[0165] Figure 8 The internal magnetic field of the structure corresponding to the basic unit U (the basic unit U, the dielectric layer 200 corresponding to the basic unit U, and the second metal layer 300 corresponding to the basic unit U) after the plane electromagnetic wave is incident is shown. Wherein, Figure 8 The corresponding internal magnetic field diagram corresponds to the basic unit in FIG. 7(a) and FIG. 7(b), wherein D1 is the magnetic field direction of the basic unit U, and D2 is the electromagnetic wave transmission direction of the basic unit U. As Figure 8 It is shown that the magnetic field strength of the internal magnetic field of the basic unit U of the electromagnetic structure S in the present application after the plane electromagnetic wave is incident ranges from 10 A / m to 70 A / m. And along the magnetic field direction D1, the magnetic field strength corresponding to the basic unit U gradually decreases, and after reaching the middle position l0 of the basic unit, the magnetic field strength corresponding to the basic unit U gradually increases. In some implementations, the magnetic field strength corresponding to the basic unit U is symmetrical with respect to the middle position l0. In addition, along the electromagnetic wave transmission direction D2, the magnetic field strength corresponding to the basic unit U remains basically unchanged. The electromagnetic structure of the present application attenuates the magnetic field inside the structure, resulting in high wave impedance and thus simulating high equivalent permeability.

[0166] The electromagnetic structure S is a non-resonant etching structure, does not change the wave propagation, and has a small electrical size. The basic unit U in the electromagnetic structure S has a hollowed interior metal and only retains the boundary line. That is, the basic unit U in the electromagnetic structure S reduces the metal in the region surrounded by the boundary line, reduces the current carrying surface, and weakens the internal magnetic field of the basic unit U. In addition, the basic units U in the electromagnetic structure S are periodically arranged to control the electromagnetic field of the electromagnetic structure S.

[0167] In some embodiments of the present application, the number of basic units in the electromagnetic structure S can be limited, for example, 3, 4, 5, 8, 9, 10, etc. In some other embodiments of the present application, the number of basic units in the electromagnetic structure S can also be unlimited. The present application does not make specific limitations in this regard.

[0168] In some embodiments of the present application, the basic units in the electromagnetic structure S are unidirectionally and periodically arranged along a certain direction.

[0169] In some other embodiments of the present application, the basic units in the electromagnetic structure S can also be periodically arranged in two intersecting directions in a certain plane. In some implementations, the two intersecting directions are perpendicular to each other.

[0170] Figure 9 The internal magnetic field of the basic unit of the electromagnetic structure in some prior art technical solutions in some embodiments of the present application after the incidence of a plane electromagnetic wave is shown. Among them, Figure 9 The corresponding internal magnetic field diagram corresponds to the basic unit in a conventional dielectric material. The magnetic field of the plane electromagnetic wave remains uniform and constant when it is transmitted in the conventional dielectric material. The magnetic field strength of the internal magnetic field of the basic unit after the incidence of the plane electromagnetic wave is about 55 A / m.

[0171] Comparison Figure 8 And Figure 9 It can be seen that the internal magnetic field of the basic unit U in the electromagnetic structure S in the present application is significantly reduced. This is mainly because the electromagnetic structure in the present application includes periodically arranged basic units to control the internal electromagnetic field of the electromagnetic structure. In the basic unit, by at least partially hollowing the internal metal, reducing the area where the metal is located, reducing the current carrying surface, weakening the internal magnetic field, and further bringing a higher wave impedance to simulate a higher equivalent relative permeability.

[0172] Figure 10 The variation of the equivalent relative permeability of the electromagnetic structure in some prior art technical solutions and the electromagnetic structure S in the present application in some embodiments of the present application is shown. Among them, la corresponds to the relative permeability of the electromagnetic structure in some prior art technical solutions, and lb corresponds to the relative permeability of the electromagnetic structure in some embodiments of the present application. As Figure 10As shown, the relative permeability range of the electromagnetic structure in some prior art technical solutions is about 0.8-1. The relative permeability range of the electromagnetic structure in the present application is about 6.8-9.3. In the present application, the relative permeability of the electromagnetic structure slightly increases with the increase of the frequency. Therefore, the electromagnetic structure S corresponding to the present application can ensure that the magnetic field inside the electromagnetic structure S is stable in a wide frequency range, and the equivalent magnetic material characteristics of wide band are realized. The simulation results of the equivalent permeability of the electromagnetic structure S can obtain a stable equivalent relative permeability of more than 7 in a wide band of 0.6-6 GHz.

[0173] The working principle of the technical solutions in the present application will be described in detail below with reference to the drawings.

[0174] In electromagnetics, a magnetic material is excited by an external magnetic induction intensity B0, the molecules in the magnetic material produce magnetization, the magnetization intensity is M, thereby promoting the increase of the permeability. The equivalent material is expected to produce a certain response to the electromagnetic wave to simulate the change of the material parameters.

[0175] FIG. 11(a) shows a schematic diagram of some conventional materials. In the conventional materials, the magnetic induction intensity can be calculated by formula (3):

[0176] B0= μ0H (3) o μ r H (3)

[0177] Wherein, B0 is the magnetic induction intensity; μ0 is the vacuum permeability; μ r is the relative permeability; H is the magnetic field intensity.

[0178] According to formula (3), the calculation formula (4) of the relative permeability μ r is not difficult to deduce:

[0179]

[0180] Wherein, μ r is the relative permeability; B0 is the magnetic induction intensity; μ0 is the vacuum permeability; H is the magnetic field intensity.

[0181] FIG. 11(b) shows a schematic diagram of some magnetic materials. The increase of the magnetic permeability of the magnetic material is derived from the magnetization of the material, and the conventional material does not have the magnetization ability. In the magnetic material, the magnetic induction intensity can be calculated by formula (5):

[0182] B= μ0(H+M) (5) o

[0183] Wherein, B is the magnetic induction intensity; μ0 is the vacuum permeability; H is the magnetic field intensity; M is the magnetization intensity.

[0184] ​According to formula (5), the calculation formula (6) of magnetic induction intensity B can be easily deduced:

[0185] B = μ o (1 + γm)H (6)

[0186] Wherein, B is magnetic induction intensity; μ0 is vacuum permeability; H is magnetic field intensity; γ is constant; m is relative magnetization intensity.

[0187] According to formula (6), the calculation formula (7) of relative permeability μ r can be easily deduced:

[0188]

[0189] Wherein, μ r is relative permeability; B0 is magnetic induction intensity; μ0 is vacuum permeability; H is magnetic field intensity; γ is constant; m is relative magnetization intensity.

[0190] Fig. 11 (c) shows a schematic diagram of some equivalent magnetic materials. The equivalent magnetic material uses the change of magnetic field intensity inside the electromagnetic structure to simulate the change of permeability. Among them, the magnetic induction intensity of the equivalent magnetic material can be calculated by formula (8):

[0191] B0 = μ o μ r H = μ o μ' r H1 (8)

[0192] Wherein, B0 is magnetic induction intensity; μ0 is vacuum permeability; μ r is relative permeability; H is magnetic field intensity; μ r ' is equivalent relative permeability; H1 is equivalent magnetic field intensity.

[0193] According to formula (8), the calculation formula (9) of equivalent relative permeability of the equivalent magnetic material can be easily deduced:

[0194]

[0195] If H1 < H, then μ r ' > μ r > 1.

[0196] Wherein, μ r′ is equivalent relative permeability; B0 is magnetic induction intensity; μ0 is vacuum permeability; H1 is equivalent magnetic field intensity.

[0197] Fig. 11(d) shows a schematic diagram of the electromagnetic structure in the present application. As shown in Fig. 11(d), a non-resonant electromagnetic structure, by etching a suitable pattern, reduces the magnitude of the magnetic field inside the electromagnetic structure unit in a wide frequency range, thereby obtaining a higher equivalent relative permeability.

[0198] Fig. 12(a) shows a schematic diagram of the simulation of the TEM wave passing through the ordinary material in some embodiments. Fig. 12(b) shows the corresponding magnetic field direction of Fig. 12(a). Fig. 12(c) shows a schematic diagram of the distribution of the magnetic field inside the basic unit of the structure corresponding to Fig. 12(a) in a wide frequency range. Fig. 12(d) shows a schematic diagram of the distribution of the equivalent relative permeability corresponding to the internal structure of the basic unit of the structure corresponding to Fig. 12(a). As shown in Fig. 12(c) and Fig. 12(d), the magnetic field inside the unit is uniformly distributed in a wide frequency range, and the equivalent relative permeability extracted inside the unit is 1.

[0199] Fig. 13(a) shows a schematic diagram of the TEM wave passing through the electromagnetic structure S in some embodiments of the present application. Fig. 13(b) shows the corresponding magnetic field direction of Fig. 13(a). Fig. 13(c) shows a schematic diagram of the distribution of the magnetic field inside the basic unit of the structure corresponding to Fig. 13(a) in a wide frequency range. As shown in Fig. 13, the magnetic field inside the unit is weakened, and the equivalent relative permeability extracted inside the unit is greater than 1 (for example, 3.5).

[0200] Figure 14 Fig. 13 shows the variation curves of the magnetic field strength and the equivalent relative permeability in different application scenarios in some embodiments of the present application. Among them, lc corresponds to the magnetic field strength variation curve of Fig. 13(a), ld corresponds to the magnetic field strength variation curve of Fig. 12(a), le corresponds to the equivalent relative permeability variation curve of Fig. 13(a), and ld corresponds to the equivalent relative permeability variation curve of Fig. 12(a). As shown in Fig. 13, compared with the structure corresponding to Fig. 12(a), the structure corresponding to Fig. 13(a) has weaker magnetic field strength, as shown by the comparison of lc and ld, and higher equivalent relative permeability, as shown by the comparison of le and ld. Figure 14

[0201] ​The technical solution provided in the application can be applied to a structure with double-layer metal layers. The technical solution provided in the application can be applied to an electromagnetic structure requiring electromagnetic wave transmission. In addition, the technical solution provided in the application can also be applied to an antenna requiring electromagnetic wave transmission. That is, the electromagnetic structure can be integrated in the antenna. In some implementation manners, the antenna can include, but is not limited to, a patch antenna, a strip antenna, a slot antenna, a cavity antenna, and an antenna with two opposite metal surfaces. In addition, the technical solution provided in the application can also be applied to electronic devices and communication devices requiring electromagnetic wave transmission. That is, the antenna can be integrated in the electronic devices and communication devices. In some implementation manners, the electronic devices include, but are not limited to, any one of a mobile phone, a watch, a tablet, a notebook computer, and an Internet of Things product. In some implementation manners, the communication devices include, but are not limited to, any one of a large base station and a small base station. The application does not make a specific limitation in this regard.

[0202] The technical solution corresponding to the application will be described below by taking a mobile phone M as an example.

[0203] Figure 15 A structural schematic diagram of the mobile phone M in some embodiments of the application is shown. As shown in the figure, Figure 15 in some embodiments of the application, the mobile phone M includes an antenna A and a support body B. The antenna A is arranged on the support body B. The antenna A can include the electromagnetic structure S corresponding to FIG. 7(a) and FIG. 7(b). The specific type of the antenna A can be at least one of a patch antenna, a strip antenna, a cavity antenna, and a slot antenna, and the application does not make a specific limitation in this regard. It can be understood that the basic unit in the electromagnetic structure S can be etched or loaded on the radiation plane or the ground plane of the antenna to realize the miniaturization of the antenna area, which is not specifically limited herein.

[0204] In the application, the antenna has two-layer planar metal layers, and the antenna magnetic field has a horizontal direction magnetic field. The figures listed in the text are schematic diagrams of the application and do not constitute a limitation on the application. In order to facilitate understanding and description, the patch antenna will be described below by way of example.

[0205] Figure 16 A perspective view of the patch antenna Aa in some embodiments of the application is shown. As shown in the figure, Figure 16 in some embodiments of the application, the patch antenna Aa includes a first metal layer 10a, a dielectric layer 20a, and a second metal layer 30a. The first metal layer 10a is fed, and the second metal layer 30a is grounded. The first metal layer 10a, the dielectric layer 20a, and the second metal layer 30a constitute an electromagnetic structure Sa.

[0206] Figure 17(a) shows a top view of the patch antenna Aa in some embodiments of the present application. Figure 17(b) shows a bottom view of the patch antenna Aa in some embodiments of the present application. As can be seen from Figures 17(a) and 17(b), in some embodiments of the present application, the second metal layer 30a comprises a plurality of basic units Ua arranged periodically in the first plane. It can be understood that in some other embodiments, the first metal layer 10a comprises a plurality of basic units arranged periodically in the first plane.

[0207] Figure 18(a) shows a schematic diagram of the magnetic field distribution of the patch antenna Aa in some embodiments of the present application. Figure 18(b) shows a schematic diagram of the magnetic field distribution of the patch antenna Aa in some other technical solutions. As can be seen from a comparison between Figures 18(a) and 18(b), the internal magnetic field of the patch antenna Aa is effectively weakened.

[0208] Figure 19 Figure 19 shows a comparison between the S parameters and the radiation efficiency of the patch antenna Aa in some embodiments of the present application and the patch antenna in some other technical solutions. As shown in Figure 19, the electromagnetic structure in the present application achieves the miniaturization and broadband of the antenna under the premise of ensuring the radiation efficiency, which is consistent with the effect of the ideal lossless magnetic material. Figure 19

[0209] In addition, the radiation efficiency of the electromagnetic structure in the present application at the resonant frequency is about -0.51 dB, and the radiation efficiency of some existing technical solutions at the resonant frequency is about -0.23 dB. It can be understood that the difference in radiation efficiency can be caused by the size. The radiation capacity of a large size is relatively strong, and when the structure is designed to be miniaturized, the electromagnetic wave of the same frequency is radiated by a smaller size, which causes a slight difference in radiation efficiency, which will not be described here.

[0210] In some embodiments of the present application, the basic units in the electromagnetic structure can be arranged periodically. The present application does not make specific limitations in this regard.

[0211] In some embodiments of the present application, a metal strip structure can be added inside the metal frame of the basic unit, the metal strip structure can be rotatable and connectable, and the number of strips is not limited; the frame line itself can be bent, and the number of bending times and the bending direction are not limited.

[0212] The possible technical solutions of the electromagnetic structure in the patch antenna Aa of the present application will be described in detail below with reference to the accompanying drawings.

[0213] Figure 20(a) shows a perspective view of the electromagnetic structure Sa in some embodiments of the present application. Figure 20(b) shows a perspective view of the electromagnetic structure Sa in some other embodiments of the present application.

[0214] ​As shown in FIG. 20(a) and FIG. 20(b), in some embodiments of the present application, the electromagnetic structure Sa in the patch antenna Aa includes a first metal layer 10a, a dielectric layer 20a and a second metal layer 30a which are sequentially stacked. The first metal layer 10a is used for feeding, and the second metal layer 30a is used for grounding. The first metal layer 10a includes a plurality of basic units Ua arranged periodically along the x direction. The electric dimension le of the basic unit Ua is much smaller than the working wavelength, so the basic unit Ua can be loaded in a low profile antenna or a resonant structure.

[0215] The above electromagnetic structure can work in a wide bandwidth without introducing additional loss, has a high equivalent relative permeability, and has a small fluctuation of the equivalent relative permeability in the working bandwidth.

[0216] In some embodiments of the present application, the basic unit Ua includes a boundary line 100a. The boundary line 100a can extend along the boundary of the basic unit Ua to maintain the normal propagation of electromagnetic waves. The boundary line 100a surrounds an area which is at least partially hollowed out to attenuate the internal magnetic field and thus improve the equivalent relative permeability. The entire electromagnetic structure Sa does not need to be resonant, so the electric dimension in the electromagnetic structure is relatively small, which facilitates the miniaturization of the electromagnetic structure Sa and the corresponding antenna.

[0217] In some embodiments of the present application, the boundary line 100a in the basic unit Ua can have any one of a square shape (as shown in FIG. 20(a)), a rectangular shape, a triangular shape, a circular shape (as shown in FIG. 20(b)), and an elliptical shape, or an irregular geometric shape. The present application does not make a specific limitation in this regard. It can be understood that the present application does not limit the specific shape of the boundary line 100a in the basic unit, and any boundary line 100a that can achieve the effects of not introducing loss, a wide working bandwidth, and a high equivalent relative permeability is within the protection scope of the present application, and will not be exemplified one by one.

[0218] In addition, in some implementation manners, the boundary line 100a can be a closed line, i.e., the boundary line 100a surrounds a sealed area. In alternative implementation manners, the boundary line 100a can also be an open line. It can be understood that the form of the boundary line 100a that can achieve effective transmission of electrical signals is within the protection scope of the present application, and the present application does not make a specific limitation in this regard. For the convenience of understanding and description, the following will be described by taking the square shape of the boundary line in the basic unit as an example.

[0219] Figure 21 FIG. 22(a) shows a top view of the electromagnetic structure Sa in some embodiments of the present application. FIG. 22(b) shows a structure schematic diagram of a basic unit Ua in the electromagnetic structure Sa in some embodiments of the present application. Figure 21 FIG. 22(a) shows a top view of the electromagnetic structure Sa in some embodiments of the present application. FIG. 22(b) shows a structure schematic diagram of a basic unit Ua in the electromagnetic structure Sa in some embodiments of the present application. Figure 21Schematic diagram of another basic unit Ua in the electromagnetic structure Sa. Fig. 22(c) shows Figure 21 Schematic diagram of another basic unit Ua in the electromagnetic structure Sa.

[0220] As shown in Fig. 22(a), in some implementations, the shape of the boundary line 100a in the basic unit Ua of the electromagnetic structure Sa can be a "square" shape. As shown in Fig. 22(b), in some other implementations, the shape of the boundary line 100a in the basic unit Ua of the electromagnetic structure Sa can also be a "worker" shape. As shown in Fig. 22(c), in some other implementations, the shape of the boundary line 100a in the basic unit Ua of the electromagnetic structure Sa can also be a "C" shape. It can be understood that the forms of the basic unit Ua that can implement Figure 21 the corresponding electromagnetic structure Sa are all within the protection scope of this application, and this application does not make specific limitations thereto.

[0221] Next, some specific structures of the boundary line 100a will be described taking the boundary line 100a in Fig. 22(b) as an example.

[0222] In some embodiments of this application, the basic unit of the electromagnetic structure is further improved. The basic unit is formed after the boundary line is bent multiple times. Since the current reverses at the bending point, the magnetic fields corresponding to the currents at the bends can cancel each other out in reverse, so the attenuation of the magnetic field inside the structure can be enhanced, and a higher equivalent magnetic permeability can be achieved., which will be described in detail below with reference to the accompanying drawings.

[0223] Fig. 23(a) shows a top view of the boundary line in some embodiments of this application. Fig. 23(b) shows a schematic diagram of the current flowing through the boundary line 100a in Fig. 23(a). Fig. 23(c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of this application. As shown in Fig. 23(a), in some embodiments of this application, the second boundary segment 120a extends reciprocally and bends in the first plane. The boundary line 100a includes two relatively arranged first boundary segments 110a, and a second boundary segment 120a for connecting the two first boundary segments 110a. Among them, the first boundary segment 110a is parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. As shown in Fig. 23(b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a points from one first boundary segment 110a to the other first boundary segment 110a. As shown in Fig. 23(c), the magnetic field intensity where the boundary line 100a is located as a whole is relatively low, but the magnetic field intensity in the corresponding area of the second boundary segment in the boundary line 100a is relatively high.

[0224] FIG. 24(a) shows a top view of the boundary line 100a in some embodiments of the present application. FIG. 24(b) shows a schematic view of the current flowing through the boundary line 100a in FIG. 24(a). FIG. 24(c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of the present application. As shown in FIG. 24(a), in some embodiments of the present application, the boundary line 100a includes two oppositely arranged first boundary segments 110a, and a second boundary segment 120a connecting the two first boundary segments 110a, the second boundary segment 120a including boundary segment 121a, boundary segment 122a, boundary segment 123a, boundary segment 124a and boundary segment 125a connected in sequence. Among them, the first boundary segment 110a, the boundary segment 122a and the boundary segment 124a are parallel to the magnetic field direction D1, and the boundary segment 121a, the boundary segment 123a and the boundary segment 125a are perpendicular to the magnetic field direction D1. As shown in FIG. 24(b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a is from the boundary segment 125a to the boundary segment 121a. As shown in FIG. 24(c), the magnetic field intensity of the whole boundary line 100a is relatively low, but the magnetic field intensity of the region corresponding to the second boundary segment 120a in the boundary line 100a is relatively high.

[0225] In addition, as can be seen by comparing FIG. 24(c) and FIG. 23(c), the magnetic field intensity in FIG. 24(c) is relatively lower and more uniform. This can be because the boundary segment 122a, the boundary segment 123a and the boundary segment 124a in the second boundary segment 120a in FIG. 24(c) are in a bent state, the current of the boundary segment 122a and the boundary segment 124a at the bent state is reversed, and thus the magnetic field generated by the boundary segment 122a and the boundary segment 124a can be counteracted, thereby enhancing the weakening of the magnetic field inside the structure. In addition, the boundary segment 121a, the boundary segment 123a and the boundary segment 125a in the second boundary segment 120a in the second boundary segment 120a in FIG. 24(c) are all perpendicular to the magnetic field direction D1. Compared with FIG. 23(c), the boundary segments perpendicular to the magnetic field direction (such as the boundary segment 121a, the boundary segment 123a and the boundary segment 125a) in FIG. 24(c) are more dispersed, which can also make the magnetic field intensity of the boundary line 100a relatively smaller and more uniform.

[0226] Figure 25(a) shows a top view of the boundary line 100a in some embodiments of the present application. Figure 25(b) shows a schematic view of the current flowing through the boundary line 100a in Figure 25(a). Figure 25(c) shows a magnetic field distribution of the boundary line 100a in some embodiments of the present application. As shown in Figure 25(a), in some embodiments of the present application, the boundary line 100a comprises two oppositely arranged first boundary segments 110a, and a second boundary segment 120a connecting the two first boundary segments 110a, the second boundary segment 120a comprising boundary segment 121a, boundary segment 122a, boundary segment 123a, boundary segment 124a, boundary segment 125a, boundary segment 126a, boundary segment 127a, boundary segment 128a and boundary segment 129a connected in sequence. Among them, the first boundary segment 110a, the boundary segment 122a, the boundary segment 124a, the boundary segment 126a and the boundary segment 128a are parallel to the magnetic field direction D1, and the boundary segment 121a, the boundary segment 123a, the boundary segment 125a, the boundary segment 127a and the boundary segment 129a are perpendicular to the magnetic field direction D1. As shown in Figure 25(b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a is from the boundary segment 129a to the boundary segment 121a. As shown in Figure 25(c), the magnetic field intensity of the whole boundary line 100a is relatively low, but the magnetic field intensity of the region corresponding to the second boundary segment 120a in the boundary line 100a is slightly increased.

[0227] In addition, as can be seen by comparing Figure 25(c) and Figure 24(c), the magnetic field intensity in Figure 25(c) is relatively lower and more uniform. This can be because the bending state in the second boundary segment 120a corresponding to Figure 25(c) is more significant, the current at the bending state reverses, the magnetic field generated thereby reverses and cancels out, thereby enhancing the weakening of the magnetic field inside the structure. In addition, compared with Figure 24(c), the boundary segments perpendicular to the magnetic field direction (such as the boundary segment 121a, the boundary segment 123a, the boundary segment 125a, the boundary segment 127a and the boundary segment 129a) corresponding to Figure 25(c) are more dispersed, which can also make the magnetic field intensity of the boundary line 100a relatively smaller and more uniform.

[0228] Figure 26Figures 23(a), 24(a) and 25(a) show the magnetic field intensity and the equivalent permeability corresponding to the basic unit Ua in different forms in some embodiments of the present application. In Figure 23(a), l01 represents the curve of the magnetic field intensity corresponding to the boundary line 100a varying with the frequency. l02 represents the curve of the equivalent permeability corresponding to the boundary line 100a varying with the frequency. In Figure 24(a), l11 represents the curve of the magnetic field intensity corresponding to the boundary line 100a varying with the frequency. l12 represents the curve of the equivalent permeability corresponding to the boundary line 100a varying with the frequency. In Figure 25(a), l21 represents the curve of the magnetic field intensity corresponding to the boundary line 100a varying with the frequency. l22 represents the curve of the equivalent permeability corresponding to the boundary line 100a varying with the frequency. As shown in Figure 23(a), the magnetic field intensity corresponding to the boundary line 100a gradually decreases and the equivalent permeability corresponding to the boundary line 100a gradually increases as the boundary line 100a becomes more complex. Figure 26 As shown in Figure 24(a), the magnetic field intensity corresponding to the boundary line 100a gradually decreases and the equivalent permeability corresponding to the boundary line 100a gradually increases as the boundary line 100a becomes more complex. Figure 23(a) to Figure 24(a) As shown in Figure 25(a), the magnetic field intensity corresponding to the boundary line 100a gradually decreases and the equivalent permeability corresponding to the boundary line 100a gradually increases as the boundary line 100a becomes more complex.

[0229] Figure 27 Figures 23(a), 24(a) and 25(a) show the top view of the boundary line 100a in some embodiments of the present application. Figure 27 As shown in Figure 23(a), the boundary line 100a includes two first boundary segments 110a arranged oppositely and a second boundary segment 120a connecting the two first boundary segments 110a. The second boundary segment 120a includes boundary segments 121a, 122a, 123a, 124a, 125a, 126a, 127a, 128a and 129a connected in sequence. The first boundary segments 110a, the boundary segments 122a, 124a, 126a and 128a are parallel to the magnetic field direction D1, and the boundary segments 121a, 123a, 125a, 127a and 129a are perpendicular to the magnetic field direction D1. Figure 27 As shown in Figure 24(a), the size and orientation of the boundary line 100a in Figure 23(a) are adjusted adaptively. Figure 27 As shown in Figure 25(a), the size and orientation of the boundary line 100a in Figure 23(a) are adjusted adaptively.

[0230] Figure 28 Figures 23(a), 24(a) and 25(a) show the top view of the boundary line 100a in some embodiments of the present application. Figure 28 As shown in Figure 24(a), the size and orientation of the boundary line 100a in Figure 23(a) are adjusted adaptively.

[0231] Figure 29 Figures 23(a), 24(a) and 25(a) show the top view of the boundary line 100a in some embodiments of the present application.Figure 27 The etched pattern shown.

[0232] It can be understood that Figure 23(a) to Figure 29 Only when the form of the boundary line 100a in the basic unit Ua is also a "work" - shaped form is shown, the possible specific structure of the boundary line 100a in the electromagnetic structure Sa. The specific structure of the boundary line 100a in the "square" - shaped form and the "C" - shaped form is similar to that of the boundary line 100a in the aforementioned "work" - shaped form, and will not be elaborated here.

[0233] In some embodiments of the present application, the basic unit of the electromagnetic structure is further improved. In the basic unit Ua, metal strips are symmetrically placed near the boundary line 100a. After bending the metal strips and connecting the two metal strips, they are arranged periodically along the X direction. The electrical size of the basic unit is much smaller than the operating wavelength. This will be described in detail below with reference to the drawings.

[0234] Figure 30 A perspective view of the electromagnetic structure Sa in some embodiments of the present application is shown. As Figure 30 shown, the electromagnetic structure Sa includes a first metal layer 10a, a dielectric layer 20a, and a second metal layer 30a stacked in sequence. Among them, the first metal layer 10a is fed, and the second metal layer 30a is grounded. The first metal layer 10a includes basic units Ua arranged periodically along the x - direction. The basic unit Ua includes a boundary line 100a and an internal line 200a. The internal line 200a extends reciprocally and bends within the arrangement plane.

[0235] In some of these implementation manners, the internal line 200a bends within the boundary line 100a, and at least part of the internal line 200a is parallel to the second boundary segment 120a of the boundary line 100a.

[0236] FIG. 31(a) shows a top view of a basic unit Ua in some embodiments of the application. FIG. 31(b) shows a schematic diagram of the current flowing through the basic unit Ua in FIG. 31(a). FIG. 31(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the application. As shown in FIG. 31(a), in some embodiments of the application, the basic unit Ua includes a boundary line 100a. The boundary line 100a includes two oppositely arranged first boundary segments 110a and a second boundary segment 120a connecting the two first boundary segments 110a. The first boundary segments 110a are parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. As shown in FIG. 31(b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a is from one of the first boundary segments 110a to the other first boundary segment 110a. As shown in FIG. 31(c), the magnetic field intensity in the whole boundary line 100a is relatively low, the magnetic field intensity in the region corresponding to the first boundary segments 110a in the boundary line 100a is relatively high, and the magnetic field intensity in the central region of the basic unit Ua is relatively low.

[0237] FIG. 32(a) shows a top view of a basic unit Ua in some embodiments of the application. FIG. 32(b) shows a schematic diagram of the current flowing through the basic unit Ua in FIG. 32(a). FIG. 32(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the application.

[0238] As shown in FIG. 32(a), in some embodiments of the application, the basic unit Ua includes a boundary line 100a and an inner line 200a. The boundary line 100a is arranged around the outer periphery of the inner line 200a. The boundary line 100a includes two oppositely arranged first boundary segments 110a and a second boundary segment 120a connecting the two first boundary segments 110a. The first boundary segments 110a are parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. The inner line 200a includes a first inner segment 201a and a second inner segment 202a. The first inner segment 201a is located near one of the second boundary segments 120a and is parallel to the second boundary segment 120a. The first inner segment 201a can couple out electrical signals from the second boundary segment 120a. The second inner segment 202a is located near another second boundary segment 120a and is parallel to the other second boundary segment 120a. The second inner segment 202a can couple out electrical signals from the other second boundary segment 120a.

[0239] As shown in FIG. 32(b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a is from one of the first boundary segments 110a to the other first boundary segment 110a. The first inner segment 201a and the second inner segment 202a induce corresponding currents.

[0240] As shown in FIG. 32(c), the magnetic field strength in the whole boundary line 100a is relatively low, the magnetic field strength in the region corresponding to the first boundary segment 110a in the boundary line 100a is relatively high, and the magnetic field strength in the region corresponding to the center of the basic unit Ua is relatively low.

[0241] As can be seen by comparing FIG. 31(c) and FIG. 32(c), the magnetic field strength in the center of the basic unit Ua in FIG. 32(c) is increased, which is mainly due to the increase in the magnetic field strength caused by the induced current in the first internal segment 201a and the second internal segment 202a.

[0242] FIG. 33(a) shows a top view of the basic unit Ua in some embodiments of the present application. FIG. 33(b) shows a schematic diagram of the current flowing through the basic unit Ua in FIG. 33(a). FIG. 33(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the present application.

[0243] As shown in FIG. 33(a), in some embodiments of the present application, the basic unit Ua includes a boundary line 100a and an internal line 200a. The boundary line 100a is arranged around the outer periphery of the internal line 200a. The boundary line 100a includes two first boundary segments 110a arranged oppositely, and a second boundary segment 120a connecting the two first boundary segments 110a. The first boundary segment 110a is parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. The internal line 200a includes a first internal segment 201a, a second internal segment 202a, and a third internal segment 203a. The first internal segment 201a is located near a second boundary segment 120a and is parallel to the second boundary segment 120a. The first internal segment 201a can couple out an electrical signal from the second boundary segment 120a. The second internal segment 202a is located near another second boundary segment 120a and is parallel to the other second boundary segment 120a. The second internal segment 202a can couple out an electrical signal from the other second boundary segment 120a. The third internal segment 203a connects the first internal segment 201a and the second internal segment 202a end to end. At least part of the third internal segment 203a is parallel to the first internal segment 201a and the second internal segment 202a.

[0244] In some implementations, the third internal segment 203a is a polyline segment. In alternative implementations, the third internal segment 203a is a straight line segment. The present application does not make a specific limitation in this regard.

[0245] As shown in Figure 33(b), when current flows through boundary line 100a, the current direction in the second boundary segment 120a points from one of the first boundary segments 110a to the other. Corresponding currents are induced in the first inner segment 201a and the second inner segment 202a. Furthermore, in the third inner segment 203a, current flows from the end connected to the second inner segment 202a to the end connected to the first inner segment 201a.

[0246] As shown in Figure 33(c), the magnetic field strength of the boundary line 100a as a whole is relatively low, the magnetic field strength of the region corresponding to the first boundary segment 110a in the boundary line 100a is relatively high, and the magnetic field strength of the central region of the basic unit Ua is relatively low.

[0247] Comparing Figures 31(c) and 33(c), it is easy to see that the magnetic field strength in the central region of the basic unit Ua in Figure 33(c) has decreased. This is mainly due to the induced current in the first internal segment 201a and the second internal segment 202a, which causes the current in the third internal segment 203a to have a component that flows in the opposite direction to the current in the second boundary segment 120a. This further decreases the internal magnetic field strength of the basic unit Ua, and consequently, further increases the equivalent relative permeability of the basic unit Ua.

[0248] Figure 34 The diagram illustrates the magnetic field strength and equivalent permeability of different morphological basic units Ua in some embodiments of this application. Specifically, l01 represents the magnetic field strength as a function of frequency corresponding to boundary line 100a in Figure 31(a). l02 represents the equivalent permeability as a function of frequency corresponding to boundary line 100a in Figure 31(a). l11 represents the magnetic field strength as a function of frequency corresponding to boundary line 100a in Figure 32(a). l12 represents the equivalent permeability as a function of frequency corresponding to boundary line 100a in Figure 32(a). l21 represents the magnetic field strength as a function of frequency corresponding to boundary line 100a in Figure 33(a). l22 represents the equivalent permeability as a function of frequency corresponding to boundary line 100a in Figure 33(a). Figure 34 As shown, by Figure 31(a) to Figure 32(a) Then, as shown in Figure 33(a), as the structure of the internal line 200a in the basic unit Ua becomes more complex, the magnetic field strength corresponding to the basic unit Ua gradually decreases, and the equivalent permeability corresponding to the basic unit Ua gradually increases.

[0249] In some applications, when the direction of incoming waves is not fixed, a rotationally symmetric structure can produce a consistent influence on the magnetic field in all directions, effectively resulting in a consistent permeability. This ensures the application of dual-polarized / circularly polarized antennas that require incoming waves from multiple directions. A detailed description will follow with accompanying figures.

[0250] Figure 35(a) shows a top view of a dual-fed dual-polarized / circularly polarized antenna Aa in some embodiments of this application. Figure 35(b) shows a bottom view of a dual-fed dual-polarized / circularly polarized antenna in some embodiments of this application. Referring to Figures 35(a) and 35(b), in some embodiments of this application, antenna Aa includes a first metal layer 10a, a dielectric layer (not shown), and a second metal layer 30a. The first metal layer 10a is fed and has two feed terminals F1 and F2. The feed directions of feed terminals F1 and F2 can be perpendicular to each other. The second metal layer 30a is grounded. The first metal layer 10a, the dielectric layer, and the second metal layer 30a constitute an electromagnetic structure Sa.

[0251] In some embodiments of this application, the basic unit of this structure not only enhances the function of magnetic field attenuation but also possesses rotational symmetry. This allows for the miniaturization and broadbanding of antennas and devices that require phase differences or different field directions to achieve specific functions, such as multi-field coordinated broadband / circular polarization. A detailed description will follow with reference to the accompanying drawings.

[0252] Figure 36 A perspective view of the electromagnetic structure Sa in some embodiments of this application is shown. For example... Figure 36 As shown, the electromagnetic structure Sa includes a first metal layer 10a, a dielectric layer 20a, and a second metal layer 30a. The first metal layer 10a is powered, and the second metal layer 30a is grounded. The first metal layer 10a includes a plurality of basic units Ua arranged periodically in a first plane. Each basic unit Ua includes a boundary line 100a and an inner line 200a. The boundary line 100a surrounds the outer periphery of the inner line 200a. The inner line 200a possesses rotational symmetry.

[0253] Figure 37(a) shows a schematic view of a basic unit Ua in some embodiments of the application. As shown in Figure 37(a), the basic unit Ua comprises a boundary line 100a and an inner line 200a. The boundary line 100a surrounds the outer periphery of the inner line 200a. The boundary line 100a comprises a pair of first boundary segments 110a and a pair of second boundary segments 120a. The inner line 200a comprises one first inner segment 201a, one second inner segment 202a and one third inner segment 203a. The first inner segment 201a is located adjacent to one of the second boundary segments 120a and is parallel to the second boundary segment 120a. The second inner segment 202a is located adjacent to the other second boundary segment 120a and is parallel to the other second boundary segment 120a. The third inner segment 203a connects the first inner segment 201a and the second inner segment 202a. It can be found that the structure shown in Figure 37(a) is similar to that shown in Figure 33(a).

[0254] Figure 37(b) shows a schematic view of a basic unit Ua in some embodiments of the application. As shown in Figure 37(b), the basic unit Ua comprises a boundary line 100a, an inner line 200a-1 and an inner line 200a-2. The boundary line 100a surrounds the outer periphery of the inner line 200a-1 and the inner line 200a-2. The boundary line 100a comprises a pair of first boundary segments 110a and a pair of second boundary segments 120a. The inner line 200a-1 has the same structure as the inner line 200a in Figure 37(a) and is located in the same position relative to the boundary line 100a. The inner line 200a-2 has the same structure as the inner line 200a in Figure 37(a) but is located in a similar position relative to the boundary line 100a. The inner line 200a-2 can be understood as the inner line 200a-1 rotated 90° about a center point. The inner line 200a-2 comprises a first inner segment 201a-1, a second inner segment 202a-1 and a third inner segment 203a-1. The first inner segment 201a-1 is located adjacent to one of the first boundary segments 110a and is parallel to the first boundary segment 110a. The second inner segment 202a-1 is located adjacent to the other first boundary segment 110a and is parallel to the other first boundary segment 110a. The third inner segment 203a-1 connects the first inner segment 201a-1 and the second inner segment 202a-1. The third inner segment 203a-1 is connected to the corresponding third inner segment of the inner line 200a-1.

[0255] Figure 37(c) shows a schematic diagram of the basic unit Ua in some embodiments of this application. As shown in Figure 37(c), the basic unit Ua includes a boundary line 100a, an inner line 200a-3, and an inner line 200a-4. The boundary line 100a surrounds the outer periphery of the inner lines 200a-3 and 200a-4. The inner line 200a-3 corresponds to the inner line 200a-1 in Figure 37(b), and the inner line 200a-4 corresponds to the inner line 200a-2 in Figure 37(b). The difference between Figure 37(c) and Figure 37(b) is that in Figure 37(c), the distance between any two adjacent segments of the parallel arrangement of the inner lines 200a-3 and 200a-4 is equal. That is, the inner lines 200a-3 and 200a-4 are separated, and the distance between adjacent segments is the same.

[0256] It is understood that the above-mentioned rotational symmetry schemes for internal lines are only some examples, and other forms of rotational symmetry schemes for internal lines are also within the scope of protection of this application, which does not make specific limitations on them.

[0257] The basic unit of the above electromagnetic structure not only enhances the function of magnetic field attenuation, but also has rotational symmetry. It can be applied to antennas and devices that require phase difference or different field directions, such as broadband / circular polarization with multi-field coordination, to achieve miniaturization and broadband of certain specific functions.

[0258] Figure 38 A perspective view of the electromagnetic structure Sa of this application is shown. Figure 38 As shown, the basic unit Ua in the electromagnetic structure is formed by superimposing the bent boundary line 100a and the internal line 200a, and then arranging the resulting new basic unit periodically along the x-direction. The electrical size of the basic unit Ua is much smaller than the operating wavelength.

[0259] Figure 39 A perspective view of the electromagnetic structure Sa of this application is shown. Figure 39 As shown, the basic unit Ua in the electromagnetic structure can be of various types (e.g., including basic unit Ua1 and basic unit Ua2), and these various basic units are periodically arranged along the x-direction. The electrical dimensions of basic units Ua1 and Ua2 are much smaller than the operating wavelength.

[0260] In some embodiments of this application, the electromagnetic structure can be stacked to form an electromagnetic component, with no limit to the number of stacked layers. The electromagnetic component can be understood as a novel electromagnetic structure. In some implementations, the stacked electromagnetic structures are stacked back-to-back. In other alternative implementations, the stacked electromagnetic structures are stacked face-to-face. In still other alternative implementations, the stacked electromagnetic structures are stacked in the same direction. A detailed description will follow with reference to the accompanying drawings.

[0261] Figure 40An exploded view of the antenna Aa in some embodiments of the application is shown. Figure 41 An exploded view of the antenna Aa in some embodiments of the application is shown. Figure 40 A perspective view of the corresponding electromagnetic assembly is shown. The electromagnetic assembly is shown in combination with Figure 40 A perspective view of the corresponding electromagnetic assembly is shown. The electromagnetic assembly is shown in combination with Figure 41 It can be appreciated that, in some embodiments of the application, the electromagnetic assembly comprises a first electromagnetic structure Sa1 and a second electromagnetic structure Sa2 that are arranged in a stacked manner. Moreover, the second metal layer in the first electromagnetic structure Sa1 faces the second metal layer in the second electromagnetic structure Sa2.

[0262] In some implementations, the second metal layer in the first electromagnetic structure Sa1 and the second metal layer in the second electromagnetic structure Sa2 are formed separately, while in alternative other implementations, the second metal layer in the first electromagnetic structure Sa1 and the second metal layer in the second electromagnetic structure Sa2 are formed integrally.

[0263] Figure 42(a) shows the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application. Figure 42(b) shows the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application. Figure 42(c) shows the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application. Figure 42(d) shows the relationship between the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located in some embodiments of the application.

[0264] As shown in Figure 42(a), in some implementations, the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located and the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located completely coincide. As shown in Figure 42(b), in alternative other implementations, the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located is located within the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located. As shown in Figure 42(c), in alternative other implementations, the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located partially coincides with the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located. As shown in Figure 42(d), in alternative other implementations, the projection area S1 in which the elementary cells in the first electromagnetic structure Sa1 are located does not coincide with the projection area S2 in which the elementary cells in the second electromagnetic structure Sa2 are located at all.

[0265] Figure 43An exploded view of the antenna Aa in some embodiments of the present application is shown. Figure 44 An exploded view of the antenna Aa in some embodiments of the present application is shown. Figure 43 A perspective view of the corresponding electromagnetic assembly is shown. In conjunction with Figure 43 And Figure 44 It can be seen that, in some embodiments of the present application, the electromagnetic assembly includes the first electromagnetic structure Sa1 and the second electromagnetic structure Sa2 arranged in superposition. And the first metal layer in the first electromagnetic structure Sa1 faces the first metal layer in the second electromagnetic structure Sa2.

[0266] In some implementations, a dielectric layer is arranged between the first metal layer in the first electromagnetic structure Sa1 and the first metal layer in the second electromagnetic structure Sa2 to separate the first metal layers of the two electromagnetic structures.

[0267] Figure 45 An exploded view of the antenna Aa in some embodiments of the present application is shown. Figure 46 An exploded view of the antenna Aa in some embodiments of the present application is shown. Figure 45 A perspective view of the corresponding electromagnetic assembly is shown. In conjunction with Figure 45 And Figure 46 It can be seen that, in some embodiments of the present application, the electromagnetic assembly includes the first electromagnetic structure Sa1 and the second electromagnetic structure Sa2 arranged in superposition. And the second metal layer in the first electromagnetic structure Sa1 faces the first metal layer in the second electromagnetic structure Sa2.

[0268] In some implementations, a dielectric layer is arranged between the second metal layer in the first electromagnetic structure Sa1 and the first metal layer in the second electromagnetic structure Sa2 to separate the second metal layer in the first electromagnetic structure Sa1 and the first metal layer in the second electromagnetic structure Sa2.

[0269] In some embodiments of the present application, Figure 45 The corresponding antenna can be applied to antenna combinations of different sizes, and the first metal layer in the second electromagnetic structure Sa2 of the corresponding antenna can serve as the second metal layer in the first electromagnetic structure Sa1 of the corresponding antenna.

[0270] In some embodiments of the present application, the electromagnetic structure in the present application is mainly applied to loading of devices with upper and lower parallel metal layers such as antenna units, resonators, etc. The loading position can be the metal surface opposite the antenna or the radiation structure of the antenna, mainly to realize the miniaturization of the antenna / device and expand the working bandwidth.

[0271] Figure 47(a) shows a top view of the slot antenna Ab in some embodiments of the present application. Figure 47(b) shows a bottom view of the slot antenna Ab in some embodiments of the present application. As can be seen from Figures 47(a) and 47(b), in some embodiments of the present application, the slot antenna Ab comprises a first metal layer 10b, a dielectric layer (not shown) and a second metal layer 30b arranged in sequence. The first metal layer 10b has a slot formed therein, and the second metal layer 30b has a plurality of basic units Ub arranged periodically at a position opposite to the slot. It can be understood that the basic unit Ub in the slot antenna Ab can refer to the basic unit Ua in the patch antenna Aa described above, which will not be described here.

[0272] It can be understood that the slot antenna comprises two layers of metal, one of which has a slot formed therein, and the other of which has the electromagnetic structure etched thereon.

[0273] Figure 48(a) shows a top view of the cavity antenna Ac in some embodiments of the present application. Figure 48(b) shows a bottom view of the cavity antenna Ac in some embodiments of the present application. As can be seen from Figures 48(a) and 48(b), in some embodiments of the present application, the cavity antenna Ac comprises a first metal layer 10c, a dielectric layer (not shown) and a second metal layer 30c arranged in sequence. The first metal layer 10c has a plurality of basic units Uc arranged periodically therein. It can be understood that the basic unit Uc in the cavity antenna Ac can refer to the basic unit Ua in the patch antenna Aa described above, which will not be described here.

[0274] It can be understood that the cavity antenna is radiated by the cavity itself, and the feed point is fed in the same way as a normal antenna, i.e., coupling or direct feeding is acceptable. The electromagnetic structure is etched on the metal shell of the cavity, so that the magnetic field of the part of the cavity is affected, which is equivalent to filling a magnetic material, and the antenna is miniaturized. The etching of the electromagnetic structure is definitely selected at the point of the magnetic field, which is consistent with the principle that the real magnetic material should be loaded at the position with a magnetic field to change the magnetic field. In some application scenarios, the cavity antenna can be applied to a notebook computer, for example, in the rectangular frame in Figure 49. Figure 49

[0275] Table 1 Summary of Antenna Radiation Efficiency in Different Application Scenarios of the Present Application

[0276] Antenna form and its resonant modes Resonant frequency Antenna radiation efficiency Initial cavity antenna base mode 5.17 GHz -0.3 dB Loaded electromagnetic structure cavity antenna base mode 3.81 GHz -0.5 dB Initial slot antenna base mode 3.06 GHz -0.3 dB Loaded electromagnetic structure slot antenna base mode 2.6 GHz -0.4 dB Initial slot antenna high order mode 6.2 GHz -0.3 dB Loaded electromagnetic structure slot antenna high order mode 4.8 GHz -0.3 dB

[0277] As can be seen from Table 1, the technical solutions in the present application have relatively low antenna radiation efficiency in various application scenarios. Moreover, the resonant frequency of the antenna using the technical solutions in the present application is relatively low, which facilitates the integration of the electromagnetic structure in the antenna.

[0278] ​The application further provides an electronic device comprising the antenna.

[0279] The application further provides a communication device comprising the antenna.

[0280] It should be noted that, in the present specification, the foregoing implementation manners are only part of the implementation manners of the solutions provided by the present application, and other principles and similar technical solutions are also within the protection scope of the present application, and the present application will not be described one by one.

[0281] In the present application, similar reference numerals and letters represent similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0282] The above describes the implementation manners of the present application by specific embodiments, and other advantages and effects of the present application can be easily understood by the person skilled in the art according to the content disclosed in the present specification. Although the description of the present application is introduced in combination with some embodiments, this does not mean that the features of the present application are limited to the implementation manners. On the contrary, the purpose of introducing the present application in combination with the implementation manners is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0283] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "outer side", "inner side", "circumferential", "radial", "axial" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0284] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "arrangement", "installation", "connection", "fitting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication between the two elements inside. For the person skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0285] Obviously, many modifications and variations of the present application are possible in light of the above teachings. It is, therefore, to be understood that within the scope of the appended claims and their equivalents, the application can be practiced otherwise than as specifically described.

Claims

1. An electromagnetic structure, characterized by, The electromagnetic structure comprises a first metal layer, a dielectric layer and a second metal layer which are sequentially stacked along a stacking direction, one of the first metal layer and the second metal layer is used for feeding, and the other is used for grounding; The first metal layer comprises a plurality of basic units arranged periodically in an arrangement plane, the basic units have a subwavelength electric size, each basic unit comprises a boundary line, the basic unit is at least partially hollow in a region surrounded by the boundary line, and the arrangement plane is perpendicular to the stacking direction; The boundary line comprises two first boundary segments and a second boundary segment, the extension direction of each first boundary segment is parallel to the magnetic field direction of the electromagnetic structure, the extension direction of the second boundary segment intersects the corresponding magnetic field direction of the electromagnetic structure, and the second boundary segment is used for connecting the two first boundary segments.

2. The electromagnetic structure of claim 1, wherein, The second boundary segment reciprocally and flexibly extends in the arrangement plane.

3. The electromagnetic structure of claim 1 or 2, wherein, Each basic unit further comprises an internal line in the region surrounded by the boundary line, and the internal line reciprocally and flexibly extends in the arrangement plane.

4. The electromagnetic structure of claim 3, wherein, The internal line comprises: Two first internal segments, each first internal segment is coupled to one of the second boundary segments; A second internal segment, the second internal segment is used for connecting the two first internal segments between the two second internal segments.

5. The electromagnetic structure of claim 4, wherein, The number of internal lines is at least two, and the at least two internal lines are relatively rotated and superimposed on each other.

6. The electromagnetic structure of claim 5, wherein, The distance between the adjacent segments of the at least two internal lines is the same.

7. The electromagnetic structure according to claim 1 or 2, characterized in that, The number of basic unit types is at least two, and each basic unit is periodically arranged in the arrangement plane.

8. The electromagnetic structure of claim 1 or 2, wherein, The arrangement plane comprises a first direction and a second direction which intersect, and the plurality of basic units are periodically arranged in the first direction and / or the second direction.

9. The electromagnetic structure of claim 8, wherein, The first direction is perpendicular to the second direction.

10. The electromagnetic structure of claim 9, wherein, The first direction is parallel to the magnetic field direction of the electromagnetic structure.

11. The electromagnetic structure of claim 1 or 2, wherein, The contour of the boundary line comprises any one of a rectangle, a triangle, a circle and an ellipse.

12. An electromagnetic assembly, characterized by The electromagnetic assembly comprises two electromagnetic structures according to any one of claims 1 to 11, and the two electromagnetic structures are stacked.

13. The electromagnetic assembly of claim 12, wherein, In the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the first metal layer of the other electromagnetic structure.

14. The electromagnetic assembly of claim 12, wherein, In the two electromagnetic structures, the second metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure.

15. The electromagnetic assembly of claim 14, wherein, The second metal layers of the two electromagnetic structures are integrally formed.

16. The electromagnetic component according to claim 12, characterized in that, In the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure.

17. The electromagnetic assembly of claim 12, wherein, In the two electromagnetic structures, the first metal layer of one electromagnetic structure serves as the second metal layer of the other electromagnetic structure.

18. The electromagnetic assembly of any one of claims 12 to 17, wherein, The relative relationship of the two electromagnetic structures comprises any one of the following: The structures and sizes of the two electromagnetic structures are the same; or The structures of the two electromagnetic structures are the same, and the sizes are in a proportional relationship; or The structures of the two electromagnetic structures are different.

19. The electromagnetic assembly of any one of claims 12 to 17, wherein, The stacking mode of the two electromagnetic structures comprises any one of the following: The directions of the first metal layers in the two electromagnetic structures are consistent with the direction of the second metal layer; or The directions of the first metal layers in the two electromagnetic structures are opposite to the direction of the second metal layer.

20. An antenna, characterized by The antenna comprises the electromagnetic structure of any one of claims 1 to 11.

21. The antenna according to claim 20, wherein, The antenna comprises any one of a patch antenna, a cavity antenna, a slot antenna and a strip antenna.

22. An electronic device, comprising: The electronic device comprises the antenna of claim 20 or 21.

23. A communications device, characterized by The communication device comprises the antenna of claim 20 or 21.

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