Integrated power-resistant amplitude-limiting low-noise amplifier circuit based on gate-drain short-circuit transistor and low-noise amplifier
By using gate-drain short-connect transistors instead of PIN diodes in an integrated limiting low-noise amplifier circuit, the problem of insufficient power withstand in a high-power environment is solved, and higher power withstand and stability is achieved.
Patent Information
- Application Number
- CN202411407598.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-10
- Publication Date
- 2025-02-14
AI Technical Summary
In the existing integrated amplitude-limiting low-noise emission circuit, PIN diodes show poor power withstand in high-power environments, making it difficult to meet the needs of complex electromagnetic environments.
A gate-drain short-connect transistor is used instead of the PIN diode. By shorting the gate and drain of the transistor, it is equivalent to a PIN diode, thereby building an integrated power-resistant, low-noise emission circuit.
The withstand power of the integrated limiting low-noise release circuit is improved, and stable work is achieved in a high-power environment, filling the gap in the design of the low-noise release process.
Smart Images
Figure CN119448957A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a low noise amplifier circuit, in particular to an integrated power-resistant and amplitude-limited low noise amplifier circuit and a low noise amplifier based on a gate-drain shorting transistor. Background Art
[0002] As a low-noise amplifier device with integrated protection function, the integrated limiting low-noise amplifier circuit has the characteristics of low noise figure, small size and high integration, and is widely used in RF receiving systems. PIN diodes are usually used as limiting devices in traditional limiter chips. However, due to process reasons, their use scenarios in integrated limiting low-noise amplifier circuits are limited. For example, when the diode and the enhanced high electron mobility transistor are integrated into a chip, they show poor performance. In addition, as the first-stage active device of the receiving system, the integrated limiting low-noise amplifier is susceptible to interference or attack from high-power microwaves in the current complex electromagnetic environment. Therefore, it is of great research significance to study how to replace the PIN diode device in the integrated limiting low-noise amplifier circuit and maximize its withstand power.
[0003] At present, the research on integrated limiting low noise amplifier circuit basically adopts PIN diode to form limiting circuit, and there is little research on how to realize integrated limiting low noise amplifier in the process that cannot load PIN diode. Summary of the invention
[0004] Purpose of the invention: The purpose of the present invention is to provide an integrated power-limiting low-noise amplifier circuit and a low-noise amplifier based on a gate-drain shorting transistor.
[0005] Technical solution: An integrated power-resistant limiting low-noise amplifier circuit based on gate-drain short-circuited transistors, including a limiting circuit and a low-noise amplifier circuit; the limiting circuit includes one or more limiting circuit branches connected in series; the limiting circuit branches include 2N transistors, N is an integer, and the gate and drain of each transistor are short-circuited.
[0006] Furthermore, the gate-source channel and the drain-source channel of the transistor are both opened, and current passes through the gate-source channel and the drain-source channel at the same time.
[0007] Furthermore, the first limiter circuit branch in the limiter circuit includes a first transistor T1, the drain D1 of the first transistor T1 is connected to the gate G1 and grounded, and the source S1 is connected to the drain D2 of the second transistor; the drain D2 of the second transistor is connected to the gate G2, and the source S2 is connected to the drain of the next transistor; recursively, finally the Nth transistor T N Drain D N With gate G N Connection, source S NWith the signal input terminal, the N+1th transistor T N+1 Drain D N+1 , the next limiting circuit branch or low noise amplifier circuit connection.
[0008] Furthermore, the N+1th transistor T in the first limiting circuit branch N+1 Drain D N+1 With gate G N+1 Short circuit, source S N+1 With the N+2th transistor T N+2 Drain D N+2 The N+2th transistor T N+2 Drain D N+2 With gate G N+2 Connection, source S N+2 Connected to the drain of the next transistor; and so on, finally the 2Nth transistor T 2N Drain D 2N With gate G 2N Connection, source S 2N Ground.
[0009] Furthermore, after the gate and drain of the transistor are short-circuited, the transistor is equivalent to a PIN diode.
[0010] Furthermore, the one or more limiting circuit branches connected in series have the same structure.
[0011] Furthermore, the limiter circuit and the low noise amplifier circuit are arranged on the same chip.
[0012] Furthermore, the input end of the limiting circuit is connected to the signal input end.
[0013] Furthermore, the output end of the low noise amplifier circuit is connected to the signal output end.
[0014] Based on the same inventive concept, a low noise amplifier of the present invention comprises the above-mentioned integrated power-resistant and limited low noise amplifier circuit based on gate-drain shorting transistor.
[0015] Beneficial effects: Compared with the prior art, the significant technical effects of the present invention are as follows:
[0016] The present invention uses a gate-drain short-circuited transistor to replace a PIN diode to form a limiting circuit, so that a low-noise amplifier process that cannot load a PIN diode can achieve a qualified integrated limiting amplifier design, filling the design gap of some low-noise amplifier processes.
[0017] Compared with a diode with an equivalent source-drain short-circuited structure, the limiting circuit composed of a gate-drain short-circuited transistor in the present invention ensures noise performance while improving the tolerable power of the integrated limiting low-noise amplifier.
[0018] The invention adopts a limiting circuit structure composed of a gate-drain short-circuited transistor, which has the advantages of clear principle and easy implementation. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a structural schematic diagram of the integrated power-resistant and limited low-noise amplifier circuit based on the gate-drain shorting transistor of the present invention;
[0020] Figure 2 The schematic diagram of the gate-drain shorting transistor in the present invention being equivalent to a PIN diode;
[0021] Figure 3 This is a diagram showing the actual measured results of the power tolerance performance of the low noise amplifier circuit of the present invention which does not adopt the limiting structure based on the gate-drain shorting transistor;
[0022] Figure 4 This is a diagram showing the actual measured results of the power tolerance performance of the integrated power-limiting low-noise amplifier circuit based on the gate-drain shorting transistor of the present invention. DETAILED DESCRIPTION
[0023] The technical solution of the present invention is described in detail below in conjunction with specific implementation methods and the accompanying drawings.
[0024] Example 1
[0025] like Figure 1 As shown, the integrated power-resistant and limited low-noise amplifier circuit based on the gate-drain shorting transistor of the present invention includes a limiting circuit and a low-noise amplifier circuit. The limiting circuit and the low-noise amplifier circuit are arranged on the same chip and are an integrated circuit. Among them, the low-noise amplifier circuit can be understood as any common low-noise amplifier circuit topology network.
[0026] The input end of the amplitude limiting circuit is connected to the signal input end, and the output end of the low noise amplifier circuit is connected to the signal output end.
[0027] The limiting circuit includes one or more limiting circuit branches connected in series; the one or more limiting circuit branches connected in series have the same structure.
[0028] The limiter circuit branch includes 2N transistors, where N is an integer, and the gate and drain of each transistor are short-circuited to improve the withstand power of the limiter circuit.
[0029] The structure of the first limiter circuit branch is as follows: the drain D1 of the first transistor T1 is connected to the gate G1 and grounded, and the source S1 is connected to the drain D2 of the second transistor; the drain D2 of the second transistor is connected to the gate G2, and the source S2 is connected to the drain of the next transistor; recursively, finally the Nth transistor T N Drain D N With gate G N Connection, source S NWith the signal input terminal, the N+1th transistor T N+1 Drain D N+1 , the next limiting circuit branch or low noise amplifier circuit connection.
[0030] The N+1th transistor T N+1 Drain D N+1 With gate G N+1 Short circuit, source S N+1 With the N+2th transistor T N+2 Drain D N+2 The N+2th transistor T N+2 Drain D N+2 With gate G N+2 Connection, source S N+2 Connected to the drain of the next transistor; and so on, finally the 2Nth transistor T 2N Drain D 2N With gate G 2N Connection, source S 2N Ground.
[0031] The gate-source channel and the drain-source channel of the transistor are both turned on, and current flows through the gate-source channel and the drain-source channel at the same time.
[0032] like Figure 2 As shown, after the gate and drain of the transistor are short-circuited, the gate-source channel and the drain-source channel can be turned on at the same time, thereby increasing the withstanding current of the transistor at the same voltage.
[0033] By short-circuiting the gate and drain of the limiting transistor in the integrated limiting low noise amplifier circuit, which is equivalent to a PIN diode, the noise performance is ensured while the tolerable power of the integrated limiting low noise amplifier is improved.
[0034] Working principle: After the gate and drain of the transistor are short-circuited, they can be equivalent to a PIN diode to form a limiting circuit. On the one hand, since the same process as the low-noise amplifier transistor is used, the noise index performance of the low-noise amplifier is less affected. On the other hand, compared with the traditional source-drain shorting method, the gate-drain shorting opens the gate-source channel and the source-drain channel. Under the same voltage, the gate-drain shorted transistor can pass a higher current, thereby improving the power tolerance of the limiting circuit.
[0035] like Figure 3As shown in the figure, pulse signals of different powers are injected into the input end. After 15 minutes, the gain result of the low noise amplifier circuit without the gate-drain short-circuit transistor limiting structure is measured. Among them, the injected power pulse signal is a periodic signal with a pulse width of 2ms, a frequency of 30GHz, and a duty cycle of 40%. After 15 minutes, the small signal gain is measured to determine whether it is normal to determine whether the measured circuit is intact. As can be seen from the figure, within the working frequency band of 27-31GHz, when the injection power is 10dBm and 18dBm, the small signal gain is normal, and the difference between them is very small; when the injection power is 19dBm, the small signal gain drops significantly, indicating that the chip has been damaged at this time. Therefore, the measured tolerance power of the low noise amplifier circuit without the gate-drain short-circuit transistor limiting structure is 18dBm, which is equivalent to 0.063W.
[0036] like Figure 4 As shown, pulse signals of different powers are injected into the input end, and after 15 minutes, the gain result of the integrated power-limited low-noise amplifier circuit is measured. Among them, the injected power pulse signal is a periodic signal with a pulse width of 2ms, a frequency of 33.5GHz, and a duty cycle of 40%. After 15 minutes, the measured circuit is intact by measuring whether the small signal gain is normal. It can be seen from the figure that in the working frequency band of 32-36GHz, when the injection power is 22dBm, 26dBm and 27dBm, the small signal gain is normal, and the difference between them is very small; when the injection power is 28dBm, the small signal gain decreases significantly, indicating that the chip has been damaged at this time. Therefore, the measured chip tolerance power is 28dBm, which is equivalent to 0.63W. Compared with the low-noise amplifier circuit without the gate-drain short-circuit transistor limiting structure, the tolerance power is increased by 10 times, which proves that the integrated power-limited low-noise amplifier circuit based on the gate-drain short-circuit transistor of the present invention effectively improves the power tolerance performance of the low-noise amplifier circuit under this process.
[0037] The present invention short-circuits the gate and drain of a limiting transistor in an integrated limiting low-noise amplifier circuit to be equivalent to a PIN diode, so that a low-noise amplifier process that cannot load a PIN diode can achieve a qualified integrated limiting amplifier design. This structural design allows current to flow in the gate-source channel and the drain-source channel at the same time, thereby increasing the current that the limiting circuit can withstand and further improving the tolerable power of the integrated limiting low-noise amplifier.
[0038] Example 2
[0039] A low noise amplifier of this embodiment includes the integrated power-resistant and limited low noise amplifier circuit based on the gate-drain shorting transistor in Embodiment 1.
[0040] Short-circuiting the gate and drain of the limiting transistor in the low-noise amplifier is equivalent to a PIN diode, so that the low-noise amplifier process that cannot load a PIN diode can achieve a qualified integrated limiting amplifier design. This structural design allows current to flow in the gate-source channel and the drain-source channel at the same time, thereby increasing the current that the limiting circuit can withstand and further improving the power tolerance of the integrated limiting low-noise amplifier.
Claims
1. An integrated power-limiting low-noise amplifier circuit based on a gate-drain shorting transistor, characterized in that: Including limiting circuit and low noise amplifier circuit; The limiting circuit includes one or more limiting circuit branches connected in series; The limiter circuit branch includes 2N transistors, N is an integer, and the gate and drain of each transistor are short-circuited.
2. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 1 is characterized in that: The gate-source channel and the drain-source channel of the transistor are both open, and current passes through the gate-source channel and the drain-source channel at the same time.
3. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 1 is characterized in that: The first limiter circuit branch in the limiter circuit includes a first transistor T1, wherein the drain D1 of the first transistor T1 is connected to the gate G1 and grounded, and the source S1 is connected to the drain D2 of the second transistor; the drain D2 of the second transistor is connected to the gate G2, and the source S2 is connected to the drain of the next transistor; and the Nth transistor T1 is connected to the gate G2. N Drain D N With gate G N Connection, source S N With the signal input terminal, the N+1th transistor T N+1 Drain D N+1 , the next limiting circuit branch or low noise amplifier circuit connection.
4. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 3 is characterized in that: The N+1th transistor T in the first limiting circuit branch N+1 Drain D N+1 With gate G N+1 Short circuit, source S N+1 With the N+2th transistor T N+2 Drain D N+2 The N+2th transistor T N+2 Drain D N+2 With gate G N+2 Connection, source S N+2 Connected to the drain of the next transistor; and so on, finally the 2Nth transistor T 2N Drain D 2N With gate G 2N Connection, source S 2N Ground.
5. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 1 is characterized in that: After the gate and drain of the transistor are short-circuited, the transistor is equivalent to a PIN diode.
6. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 1, characterized in that: The one or more series-connected limiting circuit branches have the same structure.
7. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 1 is characterized in that: The amplitude limiting circuit and the low noise amplifier circuit are arranged on the same chip.
8. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 1 is characterized in that: The input end of the amplitude limiting circuit is connected to the signal input end.
9. The integrated power-limiting low-noise amplifier circuit based on gate-drain shorting transistor according to claim 1, characterized in that: The output end of the low noise amplifier circuit is connected to the signal output end.
10. A low noise amplifier, comprising the integrated power-resistant and limited low noise amplifier circuit based on the gate-drain shorting transistor according to any one of claims 1 to 9.