Impedance regulation and control unit, radio frequency circuit, antenna structure and electronic equipment

Abstract

The invention provides an impedance regulation and control unit, a radio frequency circuit, an antenna structure and electronic equipment, and relates to the technical field of antennas. The impedance regulation and control unit comprises a plurality of monatomic layers, a reaction layer, a first control electrode and a second control electrode, each monatomic layer comprises a first end and a second end which are opposite to each other, the first ends of the monatomic layers are connected, and the second ends of the monatomic layers are connected. The reaction layer includes reaction ions, and the plurality of monatomic layers are in contact with the reaction layer. The first control electrode and the second control electrode are respectively and electrically contacted with the reaction layer so as to control the reaction ions to react with the monatomic layer, the frequency shift values of the wave crests of the Raman spectrum before and after the reaction of the monatomic layer are different, and the impedances before and after the reaction of the monatomic layer are different. The impedance regulation and control unit can be used as a switch and applied to a radio frequency circuit or an antenna structure.

Description

Technical Field

[0001] The present application relates to the field of antenna technology, and in particular to an impedance control unit, a radio frequency circuit, an antenna structure and an electronic device. Background Art

[0002] Graphene has become a research hotspot in the field of RF antennas due to its adjustable impedance, easy control and no parasitic parameters.

[0003] The existing graphene-based impedance control unit has an impedance that is not high enough in the high-resistance state and is not low enough in the low-resistance state, resulting in a narrow impedance control range. Summary of the invention

[0004] The embodiments of the present application provide an impedance control unit, a radio frequency circuit, an antenna structure and an electronic device, aiming to improve the impedance control range.

[0005] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0006] In a first aspect, an impedance control unit is provided, which includes a plurality of monoatomic layers, a reaction layer, a first control electrode and a second control electrode, each monoatomic layer includes a first end and a second end opposite to each other, the first ends of the plurality of monoatomic layers are connected, and the second ends of the plurality of monoatomic layers are connected. The reaction layer includes reaction ions, and the plurality of monoatomic layers are in contact with the reaction layer. The first control electrode and the second control electrode are respectively in electrical contact with the reaction layer to control the reaction of the reaction ions with the monoatomic layer, the frequency shift value of the peak of the Raman spectrum before and after the reaction of the monoatomic layer is different, and the impedance of the monoatomic layer before and after the reaction is different.

[0007] In the impedance control unit provided in the above-mentioned embodiment of the present application, the first ends of the plurality of single atomic layers are connected, and the second ends of the plurality of single atomic layers are connected, so that the plurality of single atomic layers are connected in parallel, and the potential of each single atomic layer is equal. Compared with the impedance of each single atomic layer, the impedance of the plurality of single atomic layers connected in parallel is reduced, thereby reducing the impedance of the low-resistance state of the impedance control unit.

[0008] Furthermore, the first control electrode and the second control electrode receive the control voltage to generate an electric field, and the electric field acts on the monoatomic layer to generate a voltage. After the monoatomic layer is compressed, the impedance of the monoatomic layer is reduced, and the impedance of the multiple monoatomic layers in parallel is also reduced, which can further reduce the impedance of the low-resistance state of the impedance control unit. By adjusting the magnitude of the control voltage, the impedance of the impedance control unit can be controlled.

[0009] In addition, multiple monoatomic layers are in contact with the reaction layer. Driven by the electric field, the reaction ions in the reaction layer gather toward the monoatomic layer. Since the potential of each monoatomic layer is equal, the reaction ions can be evenly distributed near each monoatomic layer. The order of free electrons in the monoatomic layer is good. When the control voltage is increased to reach the threshold voltage, each monoatomic layer can react with the reaction ions, so that the frequency shift value of the peak of the Raman spectrum before and after the reaction of the monoatomic layer is different, and the impedance of the monoatomic layer before and after the reaction is different. The impedance of the monoatomic layer after the reaction with the reaction ion is large, and it has the characteristics of insulation, which ensures that the impedance of the high-resistance state of the impedance control unit is high.

[0010] It can be seen that the impedance of the impedance control unit in the low-resistance state is reduced, the impedance in the high-resistance state is higher, and the impedance control range is wider.

[0011] In some embodiments, the elements of the single atomic layer include carbon group elements, and the reactive ions include at least one of hydrogen ions and fluorine ions. The carbon group elements can react with hydrogen ions or fluorine ions, and the impedance after the reaction is relatively large, and has insulating properties.

[0012] In some embodiments, multiple monoatomic layers are stacked, with a gap between at least two adjacent monoatomic layers, and at least a portion of the reaction layer is located in the gap, which is beneficial for the monoatomic layer to fully contact with the reaction ions in the reaction layer.

[0013] The impedance control unit also includes at least one ion-exchangeable medium layer, which is stacked with the monoatomic layer and in contact with the reaction layer and the monoatomic layer. The ion-exchangeable medium layer can be used to spread and diffuse the reaction ions in the reaction layer so that the reaction ions can be evenly distributed between the monoatomic layers, and the ion-exchangeable medium layer can also be used to support the monoatomic layer to prevent it from curling.

[0014] In some embodiments, the ion exchangeable medium layer includes a first medium layer and a second medium layer which are stacked, and the surfaces of the first medium layer and the second medium layer are bonded.

[0015] In some embodiments, the material of the first dielectric layer includes at least one of polyvinyl chloride and polyethylene terephthalate, and the material of the second dielectric layer includes at least one of polyvinyl chloride and polyethylene terephthalate.

[0016] In some embodiments, the ion exchangeable media layer comprises separator paper.

[0017] In some embodiments, the impedance control unit further includes a bonding layer, and a bonding layer is disposed between the single atomic layer adjacent to the ion exchangeable medium layer and the ion exchangeable medium layer.

[0018] In some embodiments, the monoatomic layer is planar in shape.

[0019] In some embodiments, multiple single atomic layers are arranged flatly and spaced apart from each other, and surfaces of the multiple single atomic layers are exposed to the reaction layer, which is beneficial for full contact between the single atomic layers and the reaction ions in the reaction layer.

[0020] In some embodiments, the monoatomic layer is in the shape of a strip.

[0021] In some embodiments, the impedance control unit further includes a first interconnecting electrode and a second interconnecting electrode, and the first ends of the plurality of single atomic layers are electrically connected to the first interconnecting electrode, thereby realizing the interconnection of the first ends of the plurality of single atomic layers. The second ends of the plurality of single atomic layers are electrically connected to the second interconnecting electrode, thereby realizing the interconnection of the second ends of the plurality of single atomic layers, thereby realizing the parallel connection of the plurality of single atomic layers.

[0022] In some embodiments, multiple single atomic layers are stacked, the first interconnected electrode includes multiple connected first sub-electrodes, the second interconnected electrode includes multiple connected second sub-electrodes, and a first sub-electrode and a second sub-electrode are arranged between at least two adjacent single atomic layers, thereby realizing electrode sharing.

[0023] In some embodiments, multiple monoatomic layers are arranged flatly, and the impedance control unit also includes a support layer, and multiple monoatomic layers are arranged on the support layer. The first interconnected electrode includes a third sub-electrode and a fourth sub-electrode, and the third sub-electrode is arranged on the support layer and is connected to the first end of the multiple monoatomic layers. The fourth sub-electrode is located on the side of the support layer away from the monoatomic layer, and the third sub-electrode penetrates the support layer and is connected to the fourth sub-electrode. The second interconnected electrode includes a fifth sub-electrode and a sixth sub-electrode, and the fifth sub-electrode is arranged on the support layer and is connected to the second end of the multiple monoatomic layers, and the sixth sub-electrode is located on the side of the support layer away from the monoatomic layer, and the fifth sub-electrode penetrates the support layer and is connected to the sixth sub-electrode.

[0024] In some embodiments, the impedance control unit further includes a substrate and a packaging structure disposed on the substrate, the packaging structure and the substrate form a chamber, a plurality of monoatomic layers and a reaction layer are disposed in the chamber, and the packaging structure can protect the internal structure of the device. Furthermore, in the case where the reaction layer has a liquid medium, the chamber formed by the packaging structure and the substrate can be used as a container for the liquid to prevent liquid leakage.

[0025] In a second aspect, a radio frequency circuit is provided, the radio frequency circuit comprising a receiver, a transmitter and a first switch, the first switch can adopt the impedance control unit in any of the above embodiments, and the receiver and the transmitter are electrically connected to the first switch respectively. The impedance of the high impedance state of the impedance control unit is relatively high, the impedance control unit is used as the first switch, its off resistance is sufficiently high and there is no parasitic capacitance, its off state is close to an ideal off state, the linearity is relatively high and there is no parasitic noise.

[0026] In a third aspect, an electronic device is provided. The electronic device includes the radio frequency circuit and the antenna structure in the above embodiment, and the radio frequency circuit is electrically connected to the antenna structure.

[0027] It can be understood that the beneficial effects that can be achieved by the electronic device provided in the above embodiments of the present application can refer to the beneficial effects of the impedance control unit and the radio frequency circuit mentioned above, and will not be repeated here.

[0028] In a fourth aspect, an antenna structure is provided, the antenna structure comprising a radiator, a floor, and a second switch, wherein the second switch is connected between the radiator and the floor. The radiator comprises a plurality of sub-radiators, and the plurality of sub-radiators are connected through the impedance control unit in any of the above embodiments. And / or, the impedance control unit in any of the above embodiments of the radiator is connected to the floor. And / or, the second switch comprises the impedance control unit in any of the above embodiments.

[0029] In a fifth aspect, an antenna structure is provided, the antenna structure comprising a radiator and a shell, the shell being arranged around the radiator. The shell comprises the impedance control unit in any of the above embodiments.

[0030] In a sixth aspect, an electronic device is provided, which includes a radio frequency circuit and the antenna structure in any of the above embodiments, and the radio frequency circuit is electrically connected to the antenna structure.

[0031] It can be understood that the beneficial effects that can be achieved by the antenna structure and electronic device provided in the above embodiments of the present application can refer to the beneficial effects of the impedance control unit mentioned above, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the present application, the following is a brief introduction to the drawings required for use in some embodiments of the present application. Obviously, the drawings described below are only drawings of some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not intended to limit the actual size of the product involved in the embodiments of the present application, the actual process of the method, the actual timing of the signal, etc.

[0033] Figure 1 A structural diagram of a mobile phone provided in an embodiment of the present application;

[0034] Figure 2 A structural diagram of an impedance control unit provided in an embodiment of the present application;

[0035] Figure 3 for Figure 2 A cross-sectional view of the impedance control unit along the section line AA';

[0036] Figure 4 A microstructure diagram of graphene provided in an embodiment of the present application;

[0037] Figure 5 and Figure 6 A distribution diagram of reactive ions in an impedance control unit provided in an embodiment of the present application;

[0038] Figure 7 and Figure 8 A schematic diagram of the reaction between a single atomic layer and reactive ions in an impedance control unit provided in an embodiment of the present application;

[0039] Fig. 9 A Raman spectrum of graphene before and after hydrogenation reaction in the impedance control unit provided in an embodiment of the present application;

[0040] Figures 10A to 10C A diagram of the steps of preparing a part of the structure of an impedance control unit provided in an embodiment of the present application;

[0041] Figures 11A to 11E A diagram of the steps of preparing another part of the structure of the impedance control unit provided in an embodiment of the present application;

[0042] Figures 12A to 12C A diagram of the steps of preparing a partial structure of an impedance control unit provided in an embodiment of the present application;

[0043] Fig.13 A structural diagram of another impedance control unit provided in an embodiment of the present application;

[0044] Fig.14 for Fig.13 A cross-sectional view of the impedance control unit along the section line BB';

[0045] Fig.15 A structural block diagram of a radio frequency circuit provided in an embodiment of the present application;

[0046] Fig.16 for Fig.15 A structural diagram of a first switch in a radio frequency circuit;

[0047] Figures 17 to 23 Structural diagrams of various antenna structures provided in embodiments of the present application. DETAILED DESCRIPTION

[0048] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments provided by the present application, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present application.

[0049] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to has a specific orientation, is constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0050] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any appropriate manner.

[0051] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more.

[0052] When describing some embodiments, the expression "connected" and its derivatives may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components have direct physical or electrical contact with each other.

[0053] “At least one of A, B or C” includes the following combinations of A, B and C: A only, B only, C only, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B and C.

[0054] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0055] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0056] Some embodiments of the present application provide an electronic device having a communication function, for example, the electronic device may adopt Bluetooth (BT) communication technology, global positioning system (GPS) communication technology, global system of mobile communication (GSM) communication technology, wireless fidelity (WiFi) communication technology, wideband code division multiple access wireless (WCDMA) communication technology, long term evolution (LTE), 5G communication technology and other future communication technologies.

[0057] The electronic device may be a mobile phone, a tablet computer, a laptop computer, a smart home, a smart wearable device (e.g., a smart watch, a smart bracelet, smart glasses, a smart helmet), a virtual reality (VR) electronic device, an augmented reality (AR) electronic device, etc. The electronic device may also be a handheld device with wireless communication function, a computing device or other processing device connected to a wireless modem, a vehicle-mounted device, a 5G network device or a public land mobile communication network (PLMN) device, etc., which is not limited in the embodiments of the present application.

[0058] For the convenience of description, the following embodiments are described by taking a mobile phone as an example of an electronic device.

[0059] Figure 1 This is a structural diagram of a mobile phone provided in an embodiment of the present application.

[0060] See also Figure 1 The mobile phone 1 includes a middle frame 11, a rear shell 12 and a display screen 13. The rear shell 12 and the display screen 13 are respectively located on opposite sides of the middle frame 11. The middle frame 11 includes a carrying plate 110 for carrying the display screen 13, and a frame 111 surrounding the carrying plate 110.

[0061] Continue to see Figure 1 The mobile phone 1 is a mobile device with communication function, which also includes a circuit board 14, a radio frequency circuit 15 arranged on the circuit board 14, and an antenna structure connected to the radio frequency circuit 15.

[0062] At present, impedance control units are used in the fields of radio frequency circuits and antenna structures. Graphene materials can be used to prepare graphene-based impedance control units due to their adjustable impedance characteristics, convenient control, and no parasitic parameters. The existing graphene-based impedance control units have a low impedance value in the high-resistance state and a low impedance value in the low-resistance state, and have a narrow impedance control range, which limits the application of graphene materials in the radio frequency / antenna field.

[0063] In order to solve the above problems, some embodiments of the present application provide an impedance control unit. Figure 2 A structural diagram of an impedance control unit provided in an embodiment of the present application; Figure 3 for Figure 2 A cross-sectional view of the impedance control unit along the section line AA'.

[0064] See also Figure 2 and Figure 3 The impedance control unit 3 includes multiple single atomic layers 31 stacked together. For example, the shape of the single atomic layer 31 is planar, and the size of the single atomic layer 31 along the direction X and the direction Y is above the millimeter level. For example, the size of the single atomic layer 31 is 10mm×10mm, and multiple single atomic layers 31 are stacked along the direction Z.

[0065] The elements of the single atomic layer 31 may include carbon group elements. For example, the carbon group elements may include carbon, silicon, germanium, tin or lead. The embodiment of the present application is described by taking the single atomic layer 31 as an example. Graphene is a sp 2 The hybrid-connected carbon atoms are closely packed into a single-layer two-dimensional honeycomb lattice structure, and the single atomic layer 31 may be a single-layer graphene.

[0066] Figure 4 The microstructure diagram of graphene provided in the embodiment of the present application shows that graphene adopts a layered architecture to form multiple single-layer graphene, each single-layer graphene is a single atomic layer 31, and the single-layer graphene has free electrons, has a small impedance, has conductive properties, and the free electrons in the single-layer graphene are well ordered.

[0067] See also Figure 3 Each monoatomic layer 31 includes a first end 31a and a second end 31b opposite to each other. For example, the two opposite ends of the monoatomic layer 31 along the direction X are the first end 31a and the second end 31b, respectively. The first ends 31a of the plurality of monoatomic layers 31 are connected, and the second ends 31b of the plurality of monoatomic layers 31 are connected, so that the plurality of monoatomic layers 31 are connected in parallel. Compared with the impedance of each monoatomic layer 31, the impedance of the plurality of monoatomic layers 31 connected in parallel is reduced. Moreover, since the plurality of monoatomic layers 31 are connected in parallel, the potentials of the respective monoatomic layers 31 are equal.

[0068] It can be understood that the more single atomic layers 31 are connected in parallel, the smaller the overall impedance of the parallel structure. The embodiments of the present application do not limit the number of single atomic layers 31. The number of single atomic layers 31 can be, for example, 2, 4, 6, 8, 10, etc.

[0069] Exemplarily, the impedance control unit 3 also includes a first interconnected electrode 32 and a second interconnected electrode 33. The first ends 31a of the multiple single atomic layers 31 are electrically connected to the first interconnected electrode 32, thereby realizing the interconnection of the first ends 31a of the multiple single atomic layers 31. The second ends 31b of the multiple single atomic layers 31 are electrically connected to the second interconnected electrode 33, thereby realizing the interconnection of the second ends 31b of the multiple single atomic layers 31, thereby realizing the parallel connection of the multiple single atomic layers 31.

[0070] Alternatively, the multiple single atomic layers 31 are connected in parallel by directly electrically contacting the first ends 31 a of the multiple single atomic layers 31 and directly electrically contacting the second ends 31 b of the multiple single atomic layers 31 .

[0071] For example, the first interconnected electrode 32 includes a plurality of connected first sub-electrodes 320, the second interconnected electrode 33 includes a plurality of connected second sub-electrodes 330, a first sub-electrode 320 and a second sub-electrode 330 are arranged between two adjacent single atomic layers 31, and the two adjacent single atomic layers 31 are connected to a first sub-electrode 320 and a second sub-electrode 330, thereby realizing electrode sharing.

[0072] See also Figure 2 and Figure 3 The impedance control unit 3 further includes a reaction layer 34, and a first control electrode 36 and a second control electrode 37 electrically contacting the reaction layer 34, and the plurality of monoatomic layers 31 are in contact with the reaction layer 34. The reaction layer 34 includes reaction ions, which may include at least one of hydrogen ions or fluorine ions, and the reaction layer 34 may include a liquid medium or a solid medium as a carrier of the reaction ions.

[0073] Exemplarily, among the stacked multiple monoatomic layers 31, there is a gap G between at least two adjacent monoatomic layers 31. It can be understood that the first sub-electrode 320 and the second sub-electrode 330 have a thickness, a first sub-electrode 320 and a second sub-electrode 330 are arranged between two adjacent monoatomic layers 31, and the first sub-electrode 320 is connected to the first end 31a of the two adjacent monoatomic layers 31, and the second sub-electrode 330 is connected to the second end 31b of the two adjacent monoatomic layers 31, and the other regions between the adjacent monoatomic layers 31 except the end have a gap G. In the case where the reaction layer 34 has a liquid medium, it is beneficial for the liquid medium to flow into the gap G, so that the monoatomic layer 31 is fully in contact with the reaction ions in the reaction layer 34.

[0074] Exemplarily, the impedance control unit 3 further includes at least one ion exchangeable medium layer 35, which is stacked with the monoatomic layer 31, and the ion exchangeable medium layer 35 is in contact with the reaction layer 34 and the monoatomic layer 31. The ion exchangeable medium layer 35 can be used to propagate the reaction ions in the reaction layer 34 so that the reaction ions can be evenly distributed between each monoatomic layer 31, and the ion exchangeable medium layer 35 can also be used to support the monolayer graphene in the monoatomic layer 31 to prevent the monolayer graphene from curling.

[0075] For example, the material of the ion exchangeable medium layer 35 may include polyvinyl chloride (PVC), polyethylene glycol terephthalate (PET), or separator paper.

[0076] Exemplarily, the ion exchangeable medium layer 35 and the monoatomic layer 31 can be bonded via an adhesive layer (not shown in the figure, which will be mentioned later when introducing the preparation method of the impedance control unit 3), and the material of the adhesive layer may include, for example, ethylene-vinyl acetate copolymer (EVA).

[0077] Exemplarily, the first control electrode 36 and the second control electrode 37 are arranged in pairs, and the impedance control unit 3 may include one or more pairs of the first control electrode 36 and the second control electrode 37. In the multiple pairs of the first control electrode 36 and the second control electrode 37, the control voltage received by each pair may be the same or different. In addition, the first control electrode 36 and the second control electrode 37 may extend along the plane XY, the first interconnecting electrode 32 and the second interconnecting electrode 33 may also extend along the plane XY, and the control electrode and the interconnecting electrode may be coplanar or not coplanar.

[0078] See also Figure 2 and Figure 3 The impedance control unit 3 further includes a substrate 38 and a packaging structure 39 disposed on the substrate 38. The packaging structure 39 and the substrate 38 form a chamber, and the plurality of monoatomic layers 31 and the reaction layer 34 are disposed in the chamber. The packaging structure 39 can protect the internal structure of the device. In addition, when the reaction layer 34 has a liquid medium, the chamber formed by the packaging structure 39 and the substrate 38 can be used as a container for the liquid to prevent liquid leakage.

[0079] See also Figure 2 The impedance control unit 3 further includes a test circuit R, which is electrically connected to the first interconnected electrode 32 and the second interconnected electrode 33 to measure the overall impedance of the plurality of single atomic layers 31 connected in parallel.

[0080] Figure 5 and Figure 6 A distribution diagram of reactive ions in an impedance control unit provided in an embodiment of the present application; Figure 7 and Figure 8 Schematic diagram of the reaction between a single atomic layer and reactive ions in an impedance control unit provided in an embodiment of the present application.

[0081] See also Figure 5 and Figure 6 Compared with the thickness of the first control electrode 36 and the second control electrode 37, the thickness of the monoatomic layer 31 is thinner. Therefore, in the electric field generated by the first control electrode 36 and the second control electrode 37 receiving the control voltage, the electric field E along the direction Z can act on the monoatomic layer 31 and the reaction layer 34. The reaction ions in the reaction layer 34 can be driven by the electric field E to gather toward the monoatomic layer 31. Since the potentials of the various monoatomic layers 31 are equal, the reaction ions can be evenly distributed between the various monoatomic layers 31, which can avoid the reverse electric field generated by the uneven distribution of the reaction ions and the suppression of the electric field E. The electric field E acts on the monoatomic layer 31 to generate a voltage. After the monolayer graphene in the monoatomic layer 31 is compressed, the impedance is reduced. Further, the impedance of the multiple monoatomic layers 31 in parallel is also reduced. In addition, by adjusting the size of the control voltage, the impedance of the multiple monoatomic layers 31 in parallel can be regulated.

[0082] See also Figure 7 and Figure 8 Since the order of free electrons in the single-layer graphene in the single-atom layer 31 is good, and the reaction ions (such as hydrogen ions) in the reaction layer 34 are evenly distributed between each single-atom layer 31, when the control voltage is increased to reach the threshold voltage, the single-layer graphene can undergo a reversible electrochemical reaction with the hydrogen ions to generate hydrogenated graphene, and the hydrogen ions in the reaction layer 34 are reduced. Hydrogenated graphene is sp 3 Hybrid connection has no free electrons, so the impedance of hydrogenated graphene is relatively large, and it has insulating properties. It can be seen that the impedance of the single atomic layer 31 is different before and after the reaction, realizing the change of the single atomic layer 31 from a conductor to an insulator.

[0083] Furthermore, by lowering the control voltage to below the threshold voltage, the hydrogenated graphene undergoes a reverse reaction, releasing hydrogen ions and reducing to graphene, thereby achieving the change of the single atomic layer 31 from an insulator to a conductor.

[0084] In addition, the reaction layer 34 may further include a catalyst for promoting the electrochemical reaction between the single-layer graphene and the hydrogen ions.

[0085] Fig. 9 This is a Raman spectrum of graphene before and after hydrogenation reaction in the impedance control unit provided in the embodiment of the present application, wherein the horizontal axis is the "frequency shift value" in cm -1 , the vertical axis is “light intensity”.

[0086] See also Fig. 9 In (a), the impedance control unit 3 includes four monoatomic layers 31 (1LG to 4LG) as an example. The figure shows the Raman spectra of the graphene in the four monoatomic layers 31 before and after the hydrogenation reaction. The graphene has a peak (G) before the hydrogenation reaction, indicating that the monoatomic layer 31 includes an element. In addition, the frequency shift value of the peak (G) is 1580cm -1 , indicating that the single atomic layer 31 includes carbon elements.

[0087] See also Fig. 9 In (b), graphene has two peaks (D and G) after hydrogenation, indicating that the single atomic layer 31 contains two elements. In addition, the frequency shift value of the two peaks (D and G) is 1330 cm -1 and 1580cm -1 , indicating that the single atomic layer 31 includes hydrogen and carbon elements, and graphene reacts with hydrogen ions to generate hydrogenated graphene.

[0088] In addition, the single-layer graphene in the single atomic layer 31 can also react with fluoride ions to generate insulating fluorinated graphene.

[0089] In the impedance control unit 3 provided in the above embodiment of the present application, the first ends 31a of the plurality of single atomic layers 31 are connected, and the second ends 31b of the plurality of single atomic layers 31 are connected, so that the plurality of single atomic layers 31 are connected in parallel, and the potentials of the respective single atomic layers 31 are equal. Compared with the impedance of each single atomic layer 31, the impedance of the plurality of single atomic layers 31 connected in parallel is reduced, thereby reducing the impedance of the low-resistance state of the impedance control unit 3.

[0090] Furthermore, the control voltage is received by the first control electrode 36 and the second control electrode 37 to generate an electric field E, which acts on the monoatomic layer 31 to generate a voltage. The impedance of the monolayer graphene in the monoatomic layer 31 is reduced after being compressed, and the impedance of the multiple monoatomic layers 31 connected in parallel is also reduced, which can further reduce the impedance of the low-resistance state of the impedance control unit 3. By adjusting the magnitude of the control voltage, the impedance of the impedance control unit 3 can be controlled.

[0091] In addition, multiple monoatomic layers 31 are in contact with the reaction layer 34. Driven by the electric field E, the reaction ions in the reaction layer 34 gather toward the monoatomic layer 31. Since the potentials of each monoatomic layer 31 are equal, the reaction ions can be evenly distributed near each monoatomic layer 31. The order of free electrons in the monoatomic layer 31 is good. When the control voltage is increased to reach the threshold voltage, the monolayer graphene in each monoatomic layer 31 can react with the reaction ions, so that the frequency shift value of the peak of the Raman spectrum of the monoatomic layer 31 before and after the reaction is different, and the impedance of the monoatomic layer 31 before and after the reaction is different. For example, a monolayer of graphene reacts with hydrogen ions to generate hydrogenated graphene. The frequency shift value of the peak of the Raman spectrum of hydrogenated graphene and monolayer graphene is different, and the impedance is also different. The impedance of hydrogenated graphene is larger, and it has an insulating property, which ensures that the impedance of the high-impedance state of the impedance control unit 3 is higher.

[0092] It can be seen that the impedance of the impedance control unit 3 in the low impedance state is reduced, the impedance in the high impedance state is higher, and the impedance control range is wider. According to the measurement of the test circuit R, the impedance control range of the impedance control unit 3 is 5Ω~5MΩ.

[0093] Some embodiments of the present application also provide a method for preparing an impedance control unit. Figures 10A to 10C A diagram of the steps of preparing a part of the structure of an impedance control unit provided in an embodiment of the present application; Figures 11A to 11E A diagram of the steps for preparing another partial structure of an impedance control unit provided in an embodiment of the present application.

[0094] See also Fig. 10A Typically, the single-layer graphene in the single-atomic layer 31 is formed on a copper substrate D. First, a glue is applied on the dielectric layer K to form a bonding layer F. Then, the single-atomic layer 31 and the copper substrate D are transferred to the dielectric layer K together, and the single-atomic layer 31 is bonded to the dielectric layer K through the bonding layer F to form a stacked structure S.

[0095] See also Fig. 10B and Fig. 10C In the case where the material of the dielectric layer K includes PVC or PET, the dielectric layers K of the two laminated structures S can be placed opposite to each other, and the two laminated structures S can be pressed together using a hot pressing bonding process, and the surfaces of the PVC or PET are bonded together under high temperature and high pressure, and the two bonded dielectric layers K together constitute the aforementioned ion exchangeable dielectric layer 35. Finally, the copper substrates D on both sides are removed to expose the single atomic layers 31 on both sides.

[0096] See also Fig.11A , the single atomic layer 31 is transferred onto the substrate 38, and then a first sub-electrode 320 and a second sub-electrode 330 are formed, and the first sub-electrode 320 and the second sub-electrode 330 are respectively connected to the first end 31a and the second end 31b of the single atomic layer 31.

[0097] See also Fig. 11B ,exist Fig.11A The structure shown is stacked Fig. 10C The structure shown.

[0098] See also Fig. 11C ,exist Fig. 11B In the structure shown, the first sub-electrode 320 and the second sub-electrode 330 are continuously formed, and then the single atomic layer 31 is transferred to form a plurality of stacked single atomic layers 31, and the first ends 31a of the plurality of single atomic layers 31 are connected, and the second ends 31b of the plurality of single atomic layers 31 are connected, thereby realizing the parallel connection of the plurality of single atomic layers 31.

[0099] See also Fig.11D , a packaging structure 39 is formed on the substrate 38 , and the packaging structure 39 and the substrate 38 form a cavity.

[0100] See also Fig.11E In the case where the reaction layer 34 has a liquid medium, the liquid can be injected into the chamber through a preset injection port on the packaging structure 39 to form the reaction layer 34 .

[0101] Some embodiments of the present application also provide another method for preparing an impedance control unit. Figures 12A to 12C A diagram of the steps of preparing a partial structure of an impedance control unit provided in an embodiment of the present application.

[0102] See also Fig. 12A In the case where the material of the dielectric layer K includes diaphragm paper, glue is first applied on the dielectric layer K to form an adhesive layer F, and then the single atomic layer 31 and the copper substrate D are transferred to the dielectric layer K together, and the single atomic layer 31 is bonded to the dielectric layer K through the adhesive layer F to form a stacked structure S.

[0103] See also Fig. 12B , the stacked structure S is turned upside down, and then glue is applied on the surface of the dielectric layer K to form a bonding layer F.

[0104] See also Fig. 12C , the monoatomic layer 31 and the copper substrate D are transferred to the stacked structure S, and the monoatomic layer 31 is bonded to the dielectric layer K through the adhesive layer F, and the dielectric layer K constitutes the aforementioned ion exchangeable dielectric layer 35. Afterwards, the copper substrate D on both sides is removed to expose the monoatomic layer 31 on both sides.

[0105] It is understandable that in Fig. 12C After the preparation steps shown, the other steps of preparing the impedance control unit 3 are the same as Figures 11A to 11E The steps shown are similar and will not be repeated here.

[0106] Some embodiments of the present application further provide an impedance control unit, Fig.13A structural diagram of another impedance control unit provided in an embodiment of the present application; Fig.14 for Fig.13 A cross-sectional view of the impedance control unit along section line BB'.

[0107] See also Fig.13 and Fig.14 , multiple single atomic layers 31 are arranged flatly, and multiple single atomic layers 31 are arranged at intervals. For example, the shape of the single atomic layer 31 is strip-shaped, and multiple single atomic layers 31 are arranged along the direction X.

[0108] Each monoatomic layer 31 includes a first end 31a and a second end 31b opposite to each other. For example, the two opposite ends of the monoatomic layer 31 along the direction Y are the first end 31a and the second end 31b, respectively. The first ends 31a of the plurality of monoatomic layers 31 are connected, and the second ends 31b of the plurality of monoatomic layers 31 are connected, so that the plurality of monoatomic layers 31 are connected in parallel, and the potentials of the respective monoatomic layers 31 are equal.

[0109] Exemplarily, the impedance control unit 3 also includes a first interconnected electrode 32 and a second interconnected electrode 33. The first ends 31a of the multiple single atomic layers 31 are electrically connected to the first interconnected electrode 32, thereby realizing the interconnection of the first ends 31a of the multiple single atomic layers 31. The second ends 31b of the multiple single atomic layers 31 are electrically connected to the second interconnected electrode 33, thereby realizing the interconnection of the second ends 31b of the multiple single atomic layers 31, thereby realizing the parallel connection of the multiple single atomic layers 31.

[0110] For example, the first interconnected electrode 32 includes a third sub-electrode 32a and a fourth sub-electrode 32b, the impedance control unit 3 also includes a support layer 40, a plurality of single atomic layers 31 are disposed on the support layer 40, the third sub-electrode 32a is disposed on the support layer 40, and is connected to the first ends 31a of the plurality of single atomic layers 31. The fourth sub-electrode 32b is located on a side of the support layer 40 away from the single atomic layer 31, and the third sub-electrode 32a penetrates the support layer 40 and is connected to the fourth sub-electrode 32b.

[0111] The material of the support layer 40 may include at least one of PVC and PET, for example.

[0112] Similarly, the second interconnected electrode 33 includes a fifth sub-electrode and a sixth sub-electrode (not shown in the figure), the fifth sub-electrode is disposed on the support layer 40, and is connected to the second ends 31b of the plurality of monoatomic layers 31. The sixth sub-electrode is located on a side of the support layer 40 away from the monoatomic layer 31, and the fifth sub-electrode penetrates the support layer 40 and is connected to the sixth sub-electrode.

[0113] See also Fig.13 and Fig.14The impedance control unit 3 also includes a reaction layer 34, and a first control electrode 36 and a second control electrode 37 electrically contacting the reaction layer 34. The reaction layer 34 includes reactive ions, and the surfaces of multiple single atomic layers 31 are exposed in the reaction layer 34, which is conducive to full contact between the single atomic layers 31 and the reactive ions in the reaction layer 34.

[0114] Exemplarily, the first interconnected electrode 32 and the second interconnected electrode 33 can also be reused as the first control electrode 36, and the second control electrode 37 is arranged above the multiple single atomic layers 31, and the second control electrode 37 can also be reused as the top of the packaging structure 39. The first control electrode 36 and the second control electrode 37 receive the control voltage to generate an electric field E along the direction Z, and the electric field E can act on the single atomic layer 31 and the reaction layer 34. The reaction ions in the reaction layer 34 can be driven by the electric field E to gather toward the single atomic layer 31. Since the potential of each single atomic layer 31 is equal, the reaction ions can be evenly distributed near each single atomic layer 31. The electric field E acts on the single atomic layer 31 to generate a voltage. The impedance of the single-layer graphene in the single atomic layer 31 is reduced after being compressed. Further, the impedance of the multiple single atomic layers 31 in parallel is also reduced, which can reduce the impedance of the low-resistance state of the impedance control unit 3. In addition, by adjusting the size of the control voltage, the impedance of the multiple single atomic layers 31 in parallel can be controlled.

[0115] Since the free electrons of the single-layer graphene in the single-atomic layer 31 are well ordered, and the reaction ions (such as hydrogen ions) in the reaction layer 34 are evenly distributed near each single-atomic layer 31, when the control voltage is increased to reach the threshold voltage, the single-layer graphene can undergo a reversible electrochemical reaction with the hydrogen ions to generate insulating hydrogenated graphene, thereby realizing the change of the single-atomic layer 31 from a conductor to an insulator. The impedance of the hydrogenated graphene is relatively large and it has insulating properties, thereby ensuring that the impedance of the high-resistance state of the impedance control unit 3 is relatively high.

[0116] It can be seen that the impedance of the impedance control unit 3 in the low-resistance state is reduced, the impedance in the high-resistance state is higher, and the impedance control range is wider.

[0117] Some embodiments of the present application further provide a radio frequency circuit, Fig.15 A structural block diagram of a radio frequency circuit provided in an embodiment of the present application; Fig.16 for Fig.15 Structural diagram of the first switch in the RF circuit.

[0118] See also Fig.15 The RF circuit 15 includes a receiver 21, a transmitter 22, a first switch 23 and a baseband chip 24. The receiver 21 and the transmitter 22 are electrically connected to the antenna structure 25 through the first switch 23, and the receiver 21 and the transmitter 22 are electrically connected to the baseband chip 24.

[0119] See also Fig.16 The first switch 23 may adopt an impedance control unit 3. The impedance of the high impedance state of the impedance control unit 3 is relatively high. The impedance control unit 3 is used as the first switch 23. Its off resistance is sufficiently high and has no parasitic capacitance. Its off state is close to an ideal off state, has high linearity and has no parasitic noise.

[0120] To verify the above conclusion, the inventors of this application conducted the following comparative tests:

[0121] Device Type <![CDATA[R on ]]> <![CDATA[R off ]]> <![CDATA[C off ]]> Operating voltage Switch 1 2Ω 30Ω 0.25pF high pressure Switch 2 1.1Ω 25kΩ 0.15pF Low pressure Impedance Control Unit 5Ω / sq 5MΩ / sq / /

[0122] Table 1

[0123] In Table 1, “R on ” is the on-resistance of the switch; “R off ” is the off resistance of the switch; “C off ” is the parasitic capacitance in the off state.

[0124] It can be seen that the off resistance of the impedance control unit 3 is the highest, reaching 5 MΩ / sq, and no parasitic capacitance is generated in the off state, making its off state close to the ideal off state.

[0125]

[0126] Table 2

[0127] Table 2 shows the insertion loss of the switch at different operating frequencies when it is in the on state.

[0128] When the operating frequency is 2 GHz, the insertion loss of the impedance control unit 3 is the same as that of the switch 2, which is 0.15 dB. When the operating frequency is 4 GHz, the insertion loss of the switch 2 is 0.35 dB, and the insertion loss of the impedance control unit 3 is 0.2 dB. The insertion loss of the switch 2 is greater than the insertion loss of the impedance control unit 3. When the operating frequency is 6 GHz, the insertion loss of the switch 2 is 0.55 dB, and the insertion loss of the impedance control unit 3 is 0.3 dB. The insertion loss of the switch 2 is also greater than the insertion loss of the impedance control unit 3.

[0129] It can be seen that as the operating frequency increases, the insertion loss of the switch 2 increases faster, while the insertion loss of the impedance control unit 3 increases slower, and the insertion loss of the impedance control unit 3 is relatively small.

[0130]

[0131] Table 3

[0132] Table 3 shows the isolation of the switch at different operating frequencies when it is in the off state.

[0133] When the operating frequency is 2 GHz, the isolation of switch 2 is 30 dB, and the isolation of impedance control unit 3 is 28 dB, which is greater than the isolation of switch 2. When the operating frequency is 4 GHz, the isolation of switch 2 is 9 dB, and the isolation of impedance control unit 3 is 26 dB, which is greater than the isolation of switch 2. When the operating frequency is 6 GHz, the isolation of switch 2 is 5 dB, and the isolation of impedance control unit 3 is 22 dB, which is greater than the isolation of switch 2.

[0134] It can be seen that when the switch is in the off state, since the impedance control unit 3 has no parasitic capacitance and the switch 2 has parasitic capacitance, the isolation of the impedance control unit 3 is better than that of the switch 2 in the whole frequency band.

[0135] Some embodiments of the present application also provide an antenna structure, Fig.17 A structural diagram of an antenna structure provided in an embodiment of the present application.

[0136] See also Fig.17 The antenna structure 4 includes a radiator 41 , a floor 42 and a second switch 43 . The second switch 43 is connected between the radiator 41 and the floor 42 . The second switch 43 may adopt an impedance control unit 3 .

[0137] In order to verify the performance of the impedance control unit 3 applied to the antenna structure, the inventor of the present application conducted the following comparative test:

[0138] Device Type <![CDATA[R on ]]> <![CDATA[R off ]]> <![CDATA[C off ]]> Operating voltage Switch 2 1.1Ω 25kΩ 0.15pF Low pressure Impedance Control Unit 5Ω / sq 5MΩ / sq / /

[0139] Table 4

[0140] According to Table 4, the off resistance of the impedance control unit 3 is 5MΩ / sq, and the off resistance of the switch 2 is 25kΩ. The off resistance of the switch 2 is much smaller than the off resistance of the impedance control unit 3, and the off state of the switch 2 will generate parasitic capacitance.

[0141] Contrast type Radiation efficiency(dB) Ideal conduction state -0.1 Switch 2 -0.2 Impedance Control Unit -0.2

[0142] Table 5

[0143] Table 5 shows the radiation efficiency of the switch in the on state when the center frequency of the antenna structure is 2.4 GHz.

[0144] It can be seen that when the switch is in the on state, the radiation efficiency of the switch 2 is the same as the radiation efficiency of the impedance control unit 3, both of which are -0.2 dB.

[0145] Contrast type Radiation efficiency(dB) Ideal off state -0.15 Switch 2 -0.6 Impedance Control Unit -0.15

[0146] Table 6

[0147] Table 6 shows the radiation efficiency of the switch in the off state when the center frequency of the antenna structure is 1.7 GHz.

[0148] It can be seen that when the switch is in the off state, the radiation efficiency of the switch 2 is -0.6 dB, the radiation efficiency of the impedance control unit 3 is -0.15 dB, and the radiation efficiency of the impedance control unit 3 is higher than that of the switch 2.

[0149] The reason is that switch 2 has parasitic capacitance and a small off resistance, while impedance control unit 3 has no parasitic capacitance and a large off resistance. The parasitic capacitance has a greater impact on radiation efficiency than the off resistance, resulting in lower radiation efficiency of switch 2.

[0150] The inventors of the present application also conducted the following comparative tests:

[0151] Device Type <![CDATA[R on ]]> <![CDATA[R off ]]> <![CDATA[C off ]]> Operating voltage Switch 1 2Ω 30kΩ 0.25pF high pressure Impedance Control Unit 5Ω / sq 5MΩ / sq / /

[0152] Table 7

[0153] According to Table 7, the off resistance of the impedance control unit 3 is 5MΩ / sq, and the off resistance of the switch 1 is 30kΩ. The off resistance of the switch 1 is much smaller than the off resistance of the impedance control unit 3, and the off state of the switch 1 will generate parasitic capacitance.

[0154] Contrast type Radiation efficiency(dB) Ideal conduction state -0.1 Switch 1 -0.3 Impedance Control Unit -0.4

[0155] Table 8

[0156] Table 8 shows the radiation efficiency of the switch in the on state when the center frequency of the antenna structure is 1.8 GHz.

[0157] It can be seen that when the switch is in the on state, the radiation efficiency of the switch 1 is -0.3 dB, and the radiation efficiency of the impedance control unit 3 is -0.4 dB. The radiation efficiency of the switch 1 is close to the radiation efficiency of the impedance control unit 3.

[0158] Contrast type Radiation efficiency(dB) Ideal off state -0.7 Switch 1 -2.0 Impedance Control Unit -0.8

[0159] Table 9

[0160] Table 9 shows the radiation efficiency of the switch in the off state when the center frequency of the antenna structure is 900 MHz.

[0161] It can be seen that when the switch is in the off state, the radiation efficiency of switch 1 is -2.0 dB, the radiation efficiency of impedance control unit 3 is -0.8 dB, and the radiation efficiency of impedance control unit 3 is higher than that of switch 2.

[0162] The reason is that switch 1 has parasitic capacitance and a small off resistance, and the off resistance has a greater impact on radiation efficiency than the parasitic capacitance, resulting in lower radiation efficiency of switch 2.

[0163] Some embodiments of the present application also provide several antenna structures. Figure 18 to Figure 22 Structural diagrams of various antenna structures provided in embodiments of the present application.

[0164] See also Fig.18 The antenna structure 5 includes a radiator 51 and a floor 52. The radiator 51 may include multiple sub-radiators 510. The multiple sub-radiators 510 are connected through an impedance control unit 3. By adjusting the impedance of the impedance control unit 3, various combination connection methods of the multiple sub-radiators 510 can be realized, thereby enriching the application scenarios of the antenna structure 5.

[0165] See also Fig.19 The antenna structure 5 includes a radiator 51 and a floor 52 . The radiator 51 is connected to the floor 52 via an impedance control unit 3 . The impedance control unit 3 can be used to adjust the voltage at the end of the radiator 51 .

[0166] See also Fig. 20 The antenna structure 5 includes a radiator 51 and a floor 52. The radiator 51 is connected to the floor 52 through an impedance control unit 3. The antenna form can be switched by adjusting the impedance of the impedance control unit 3.

[0167] See also Fig.21 The antenna structure 5 includes a radiator 51 and a floor 52. The radiator 51 is T-shaped, and both ends of the radiator 51 are respectively connected to impedance control units 3. The radial size of the radiator 51 can be adjusted by adjusting the impedance of the impedance control unit 3.

[0168] See also Fig. 22 The antenna structure 5 includes a radiator 51, which may include, for example, a first sub-radiator 510a, a second sub-radiator 510b, a third sub-radiator 510c, and a fourth sub-radiator 510d. The impedance control unit 3 may include, for example, a first control area 3a and a second control area 3b, the first sub-radiator 510a and the second sub-radiator 510b are respectively connected to the first control area 3a, and the third sub-radiator 510c and the fourth sub-radiator 510d are respectively connected to the second control area 3b.

[0169] The first sub-radiator 510a and the second sub-radiator 510b can be connected by adjusting the impedance of the first control area 3a of the impedance control unit 3. Also, the third sub-radiator 510c and the fourth sub-radiator 510d can be connected by adjusting the impedance of the second control area 3b of the impedance control unit 3.

[0170] In some other examples, the first sub-radiator 510a and the fourth sub-radiator 510d may also be connected to the same control area, and the second sub-radiator 510b and the third sub-radiator 510c may also be connected to the same control area.

[0171] Some embodiments of the present application also provide an antenna structure, Fig.23 A structural diagram of the antenna structure provided in an embodiment of the present application.

[0172] See also Fig.23 The antenna structure 5 includes a radiator 51 and a shell 53 . The shell 53 is arranged around the radiator 51 . The shell 53 can be prepared by the impedance control unit 3 .

[0173] Exemplarily, the shell 53 is in the shape of a cube and surrounds the radiator 51. The shell 53 includes four faces, which are equivalent to four independently controllable impedance control units 3. The transmission state-reflection state switching of any face can be achieved by adjusting the impedance of the impedance control unit 3 of any face.

[0174] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. An impedance control unit, characterized in that: include: A plurality of single atomic layers, each of the single atomic layers comprising a first end and a second end opposite to each other, the first ends of the plurality of single atomic layers being connected, and the second ends of the plurality of single atomic layers being connected; A reaction layer, including reaction ions, wherein the plurality of monoatomic layers are in contact with the reaction layer; A first control electrode and a second control electrode, wherein the first control electrode and the second control electrode are respectively electrically contacted with the reaction layer to control the reaction ions to react with the single atomic layer, the frequency shift value of the peak of the Raman spectrum of the single atomic layer before and after the reaction is different, and the impedance of the single atomic layer before and after the reaction is different.

2. The impedance control unit according to claim 1, characterized in that: The elements of the monoatomic layer include carbon group elements; The reactive ions include at least one of hydrogen ions and fluorine ions.

3. The impedance control unit according to claim 1 or 2, characterized in that: The plurality of monoatomic layers are stacked, with a gap between at least two adjacent monoatomic layers, and at least a portion of the reaction layer is located in the gap; and / or, The impedance control unit further includes at least one ion exchangeable medium layer, the ion exchangeable medium layer is stacked with the monoatomic layer, and the ion exchangeable medium layer is in contact with the reaction layer and the monoatomic layer.

4. The impedance control unit according to claim 3, characterized in that: The ion exchangeable medium layer comprises a first medium layer and a second medium layer which are stacked; The surfaces of the first dielectric layer and the second dielectric layer are bonded.

5. The impedance control unit according to claim 4, characterized in that: The material of the first dielectric layer includes at least one of polyvinyl chloride and polyethylene terephthalate, and the material of the second dielectric layer includes at least one of polyvinyl chloride and polyethylene terephthalate.

6. The impedance control unit according to claim 3, characterized in that: The ion exchangeable medium layer includes separator paper.

7. The impedance control unit according to any one of claims 3 to 6, characterized in that: The impedance control unit further includes a bonding layer; The bonding layer is disposed between the monoatomic layer adjacent to the ion exchangeable medium layer and the ion exchangeable medium layer.

8. The impedance control unit according to any one of claims 3 to 7, characterized in that: The monoatomic layer has a planar shape.

9. The impedance control unit according to claim 1 or 2, characterized in that: The multiple single atomic layers are arranged in a flat pattern, and the multiple single atomic layers are arranged at intervals.

10. The impedance control unit according to claim 9, characterized in that: The shape of the single atomic layer is stripe.

11. The impedance control unit according to any one of claims 1 to 10, characterized in that: The impedance control unit further includes a first interconnected electrode and a second interconnected electrode; The first ends of the plurality of single atomic layers are electrically connected to the first interconnecting electrode, and the second ends of the plurality of single atomic layers are electrically connected to the second interconnecting electrode.

12. The impedance control unit according to claim 11, characterized in that: The plurality of monoatomic layers are stacked; The first interconnected electrode includes a plurality of connected first sub-electrodes, the second interconnected electrode includes a plurality of connected second sub-electrodes, and one first sub-electrode and one second sub-electrode are arranged between at least two adjacent monoatomic layers.

13. The impedance control unit according to claim 11, characterized in that: The multiple monoatomic layers are arranged in a tiled manner; The impedance control unit further comprises a support layer, and the plurality of monoatomic layers are arranged on the support layer; The first interconnected electrode includes a third sub-electrode and a fourth sub-electrode, wherein the third sub-electrode is disposed on the support layer and connected to the first ends of the plurality of single atomic layers; the fourth sub-electrode is located on a side of the support layer away from the single atomic layer, and the third sub-electrode penetrates the support layer and is connected to the fourth sub-electrode; The second interconnected electrode includes a fifth sub-electrode and a sixth sub-electrode, the fifth sub-electrode is arranged on the supporting layer and is connected to the second ends of the multiple single atomic layers; the sixth sub-electrode is located on the side of the supporting layer away from the single atomic layer, and the fifth sub-electrode penetrates the supporting layer and is connected to the sixth sub-electrode.

14. The impedance control unit according to any one of claims 1 to 13, characterized in that: The impedance control unit further includes a substrate, and a packaging structure disposed on the substrate, wherein the packaging structure and the substrate form a chamber; The plurality of monoatomic layers and the reaction layer are disposed in the chamber.

15. A radio frequency circuit, characterized in that: include: Receivers and transmitters; A first switch, comprising an impedance control unit according to any one of claims 1 to 14; The receiver and the transmitter are electrically connected to the first switch, respectively.

16. An electronic device, characterized in that: include: The radio frequency circuit as claimed in claim 15; The antenna structure is electrically connected to the radio frequency circuit.

17. An antenna structure, characterized in that: include: Radiator; floor; a second switch connected between the radiator and the floor; Wherein, the radiator includes multiple sub-radiators, and the multiple sub-radiators are connected through the impedance control unit described in any one of claims 1 to 14; and / or the radiator is connected to the floor through the impedance control unit described in any one of claims 1 to 14; and / or the second switch includes the impedance control unit described in any one of claims 1 to 14.

18. An antenna structure, characterized in that: include: Radiator; A shell is arranged around the radiator; the shell comprises the impedance control unit according to any one of claims 1 to 14.

19. An electronic device, characterized in that: include: Radio frequency circuits; The antenna structure according to claim 17, or the antenna structure according to claim 18; The radio frequency circuit is electrically connected to the antenna structure.

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