Manufacturing method of mask for OLED (Organic Light Emitting Diode)
By adopting a metal-containing mask manufacturing method in OLED display manufacturing, the problems of long manufacturing time and insufficient thickness of FMM are solved, and a faster and more efficient OLED display manufacturing process is achieved.
Patent Information
- Application Number
- CN202411030974.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-08-02
- Filing Date
- 2024-07-30
- Publication Date
- 2025-02-14
AI Technical Summary
In the manufacturing of existing OLED displays, the FMM is manufactured for a long time and the thickness is not enough to avoid the central part sagging, affecting pattern alignment.
By using a metal-containing OLED mask manufacturing method, a thin and rigid OLED mask is formed by providing a metal substrate, forming a photosensitive film and pattern, and performing dry and wet etching.
Reduces manufacturing time, reduces equipment cost and space requirements, while thinning the mask, reduces central sagging and improves pattern alignment convenience.
Smart Images
Figure CN119451527A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a method for manufacturing an OLED mask, and more particularly to a method for manufacturing an OLED mask that can be manufactured using existing semiconductor equipment, thereby reducing manufacturing time and minimizing mask sagging. Background Art
[0002] OLED (Organic Light-Emitting Diode) is an organic light-emitting diode that uses organic compounds to generate light. Such organic compounds can emit light when current flows through each pixel. Unlike plasma displays or LCD (Liquid Crystal Display), OLED displays do not require a backlight or LED backlight, and individual pixels emit light directly, so they can provide high contrast and broadband audio-visual experience.
[0003] Such OLED manufacturing includes various steps such as substrate manufacturing, transparent electrode pattern manufacturing, organic light-emitting material layer evaporation, electrode pattern manufacturing and protective layer attachment.
[0004] The organic light-emitting material layer is deposited by evaporating the core of OLED, the organic light-emitting material layer, on the pixel of TFT (Thinfilm transistor). Such an organic light-emitting material layer plays the role of emitting light, and various organic compounds are used to present various colors.
[0005] In order to evaporate the aforementioned organic light-emitting material layer, an FMM (Fine metal mask) is used. The FMM is composed of a metal plate with fine holes. That is, the organic matter can be heated in the evaporation source, and the heated organic matter sublimates and passes through the holes of the FMM located above to accurately evaporate the green, red, blue and other organic light-emitting materials configured in the OLED sub-pixels.
[0006] If we look at the previous methods of manufacturing FMM, we will use methods such as electroforming, laser patterning, and etching. FMM is a thin metal plate with ultra-fine holes. It is a component that allows OLED organic matter to be accurately evaporated into the display pixels. Since tens of millions of holes with a diameter of approximately 20 microns (μm) to 30 microns (μm) are punched, the most difficult technology is required.
[0007] In the past, FMM was mainly manufactured by rolling an iron and nickel alloy, i.e., a low expansion alloy (Invar), into a thin layer. However, the low expansion alloy used in the past was applied with wet etching using an acid solution or laser processing or electroplating to produce fine patterns, which required additional equipment and facilities depending on the manufacturing method, and the mask processing required a long time of 2-3 weeks.
[0008] In addition, the demand for high-resolution displays has been increasing recently. In order to achieve such high resolution, fine patterning of FMM is required, and for this reason, the thickness of FMM needs to be thinner. However, when using the conventional low expansion alloy, there is a limitation in setting the thickness to less than 20μm. Furthermore, when using the low expansion alloy to manufacture FMM, the center of the FMM sags due to its own weight, and there are problems such as difficulty in aligning the FMM. Summary of the invention
[0009] In order to solve the above-mentioned problems, an object of the present invention is to provide an OLED mask and a method for manufacturing the same, which enable manufacturing of FMM using equipment and devices used in conventional semiconductor equipment.
[0010] Another object of the present invention is to provide an OLED mask and a method for manufacturing the mask, which can be made thinner than a conventional low expansion alloy and can reduce sagging in the center portion in order to achieve high resolution.
[0011] The object of the present invention as described above can be achieved by a method for manufacturing a mask for a metal-containing OLED, characterized in that the method for manufacturing a mask for a metal-containing OLED comprises: a step of providing a substrate; a step of forming a photosensitive film on a first surface of the substrate; a step of forming a pattern on the photosensitive film; a first etching step of etching a part of the substrate corresponding to the pattern; and a second etching step of etching the second surface of the substrate to form a pattern hole corresponding to the pattern.
[0012] Here, in one embodiment of the present invention, the substrate may be made of metal.
[0013] In addition, the etching methods in the first etching step and the second etching step may be different from each other.
[0014] Furthermore, in the first etching step, the substrate may be partially etched by dry etching.
[0015] Furthermore, in the second etching step, the second surface of the substrate may be etched to a predetermined thickness by wet etching to form pattern holes corresponding to the pattern.
[0016] On the other hand, in the second etching step, a frame portion which is not etched may be formed at an edge of the substrate.
[0017] Furthermore, the metal may be made of a metal that can be etched both dry and wet.
[0018] For example, the substrate may be composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum, or an alloy of two or more thereof.
[0019] In addition, the substrate may be made of beryllium, or an alloy of beryllium and at least one selected from the group consisting of iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.
[0020] On the other hand, in another embodiment of the present invention, the method for manufacturing a mask for OLED may further include: forming a metal film on the first surface of the substrate, and the photosensitive film is formed on the metal film.
[0021] In this case, in the step of forming the metal film on the first surface of the substrate, the metal film may be welded to the first surface of the substrate, or the metal may be vapor-deposited on the first surface of the substrate.
[0022] Furthermore, the metal film may be composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum, or an alloy of two or more thereof.
[0023] In addition, the metal film may be composed of beryllium, or an alloy of beryllium and at least one selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.
[0024] Furthermore, in the first etching step, the metal film and a part of the substrate may be etched according to the pattern.
[0025] Furthermore, in the second etching step, the substrate may be configured in a frame form having an opening portion for exposing the group of pattern holes of the metal film.
[0026] According to the present invention having the above structure, when manufacturing the mask for OLED, that is, FMM, no additional equipment and facilities are required, and the equipment and facilities used in existing semiconductor equipment can be used, thereby reducing the cost and space constraints caused by the equipment.
[0027] Furthermore, according to the present invention, the thickness can be made thinner than the low expansion alloy used in the related art, so that high resolution can be achieved, and further, the center sagging can be reduced, and the alignment of the FMM can be performed more easily. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] Figure 1 is a flow chart showing steps for manufacturing a mask for an OLED according to an embodiment of the present invention,
[0029] Figure 2 is a diagram showing a step of forming a photosensitive film on a first surface of a metal substrate according to an embodiment of the present invention,
[0030] Figure 3 It is shown in Figure 2 In the figure, a step of forming a pattern on a photosensitive film is shown.
[0031] Figure 4 It is shown in Figure 3 The figure shows a state where a portion of the metal substrate is etched corresponding to the pattern.
[0032] Figure 5 is a diagram showing the masking step,
[0033] Figure 6 It is shown in Figure 5 A diagram showing a state in which the second surface of the metal substrate is etched,
[0034] Figure 7 It is shown in Figure 6 Figure 1 shows an OLED mask with the shielding components removed.
[0035] Figure 8 is a diagram showing a step of forming a metal film and a photosensitive film on a first surface of a substrate according to another embodiment of the present invention,
[0036] Fig. 9 It is shown in Figure 8 In the figure, a step of forming a pattern on a photosensitive film is shown.
[0037] Fig.10 It is shown in Fig. 9 The figure shows the state where the metal film and the substrate are partially etched corresponding to the pattern.
[0038] Fig.11 It is enlarged to show Fig.10 A partial picture of
[0039] Fig.12 is a diagram showing the masking step,
[0040] Fig.13 It is shown in Fig.12 A diagram showing a state in which the second surface of the substrate is etched and the shielding member is removed,
[0041] Fig.14 It is a plan view showing a completed OLED mask.
[0042] (Explanation of Reference Numerals)
[0043] 100, 500: substrate
[0044] 200: Metal film
[0045] 210: Middle hole
[0046] 300: Photosensitive film
[0047] 310: Pattern
[0048] 400: Shielding components
[0049] 510: Depression
[0050] 610: Pattern recess
[0051] 710: Pattern hole
[0052] 800: Mask for OLED DETAILED DESCRIPTION
[0053] The following is a detailed description of a method for manufacturing a metal-containing OLED (Organic Light-Emitting Diode) mask according to an embodiment of the present invention with reference to the accompanying drawings. It is first clarified that the OLED mask used in this specification is equivalent to the FMM (Fine metal mask) used for evaporating the organic light-emitting material layer in the OLED manufacturing step.
[0054] Figure 1 is a flow chart showing steps for manufacturing a mask for an OLED according to an embodiment of the present invention.
[0055] Reference Figure 1 The method for manufacturing a mask for a metal-containing OLED may include providing a substrate 100 (refer to Figure 2 ) step (S110), on the first surface 101 (refer to Figure 2 ) to form a photosensitive film 300 (refer to Figure 2 ) step (S130), forming a pattern 310 (refer to Figure 3 ), a first etching step (S170) of etching a portion of the substrate 100 corresponding to the pattern 310, and a second etching step (S150) of etching the second surface 102 of the substrate 100 (see Figure 2 ) and the pattern holes 112 are formed corresponding to the pattern 310 (refer to Figure 6 ) is subjected to a second etching step (S190).
[0056] Figures 2 to 7This is equivalent to a diagram showing a process of manufacturing the OLED mask by manufacturing the substrate 100 with metal according to an embodiment of the present invention.
[0057] Figure 2 1 is a diagram showing a step of forming a photosensitive film 300 on the first surface 101 of the substrate 100 .
[0058] First, if Figure 2 As shown in (A), the substrate 100 is provided. The substrate 100 may have a first surface 101 and a second surface 102 located on the opposite side of the first surface 101. For example, the first surface 101 may correspond to the upper surface of the substrate 100, and the second surface 102 may correspond to the lower surface of the substrate 100.
[0059] On the other hand, the substrate 100 may be made of metal. In addition, the metal forming the substrate 100 may be made of a metal that can be dry-etched and wet-etched.
[0060] For example, the metal forming the substrate 100 may be composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin (Sn), zinc-titanium (Zn-Ti), aluminum (Al), tungsten carbide and platinum, or an alloy of two or more thereof.
[0061] Alternatively, preferably, the metal forming the substrate 100 is composed of beryllium, or an alloy of beryllium and any one or more selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum.
[0062] Here, looking at the physical properties of beryllium, its specific gravity is about 0.7 times that of aluminum and about 0.23 times that of iron. Its rigidity is more than 50% higher than that of steel, and it is lighter and harder than titanium. In addition, when beryllium is used, etching equipment used in conventional semiconductor equipment can be applied to manufacture FMM, and due to the characteristics of the material, it can be reused by cleaning. Furthermore, since it is about 0.7 times lighter than the low expansion alloy used in the past, it can also prevent the phenomenon of pattern destruction due to sagging of the mask.
[0063] On the other hand, the substrate 100 can be made of the aforementioned metal or metal alloy by rolling. For example, when beryllium is used, the thickness of the metal film can be made to be approximately 10 μm to 20 μm.
[0064] then, Figure 2As shown in (B), a photoresist film 300 may be formed on the first surface 101 of the substrate 100 , and a pattern 310 may be formed on the photoresist film 300 . Figure 3 FIG. 1 is a diagram showing a state where the pattern 310 is formed on the photosensitive film 300 .
[0065] Reference Figure 3 A mask (not shown) is manufactured for accurately arranging sub-pixels of each color in consideration of the pixel structure of the OLED display, and such a mask is arranged above the photosensitive film 300 and irradiated with UV (ultra violet) light to form the pattern 310.
[0066] on the other hand, Figure 4 It is shown in Figure 3 FIG. 1 is a diagram showing a state in which a portion of the substrate 100 is etched.
[0067] like Figure 3 as well as Figure 4 As shown, after the pattern 310 is formed on the photosensitive film 300, the first surface 101 of the substrate 100 is etched corresponding to the pattern 310 to form a pattern recess 312. In this case, the first surface 101 of the substrate 100 may be etched with a predetermined thickness.
[0068] On the other hand, the etching step may be performed, for example, by dry etching, and specific etching conditions are not particularly limited.
[0069] Then, in Figure 4 After the photosensitive film 300 is removed by using a solvent, Figure 5 When the photosensitive film 300 is removed, a recessed portion 110 corresponding to a portion of the aforementioned pattern recessed portion 312 remains on the first surface 101 of the substrate 100 .
[0070] Here, masking may be defined as a step of shielding the substrate 100 using an appropriate shielding member 400. When shielding the substrate 100, the second surface 102 of the substrate 100 may remain in an open state.
[0071] The reason for performing masking in this way is that, when etching the second surface 102 of the substrate 100 as described later, the second surface 102 of the substrate 100 is etched to a predetermined thickness without affecting the upper recessed portion 110 .
[0072] Next, the second surface 102 of the substrate 100 is etched. Figure 6 It is shown in Figure 5FIG. 1 is a diagram showing a state in which the second surface 102 of the substrate 100 is etched.
[0073] Reference Figure 5 as well as Figure 6 , the second surface 102 of the substrate 100 exposed by etching from the open portion of the shielding member 400 .
[0074] For example, the second surface 102 of the substrate 100 may be wet-etched using a KOH solution. Thus, when etching the second surface 102 of the substrate 100, the etching amount may be adjusted to expose the recessed portion 110 formed on the first surface 101 of the substrate 100.
[0075] Furthermore, the substrate 100 can be etched to a desired thickness by wet etching the second surface 102 of the substrate 100. For example, the substrate 100 can be etched to a thickness of approximately 10 μm to 20 μm, or approximately 1 μm to 9 μm. As a result, the OLED mask 800 (see FIG. 1 ) formed by the substrate 100 can be formed. Figure 7 ) is formed to a thickness of approximately 10 μm to 20 μm, or approximately 1 μm to 9 μm.
[0076] By the wet etching, a Figure 6 As shown in FIG. 1 , the pattern holes 112 penetrate the substrate 100 .
[0077] In addition, when the second surface 102 of the substrate 100 is wet etched, the concentration of the etching solution is adjusted, and the etching solution is wet etched. Figure 6 As shown, a frame portion 120 which is not etched is formed at the edge of the substrate 100. The frame portion 120 has a shape extending downward and can play a role of a frame in the OLED mask 800 described later.
[0078] Next, remove the shielding member 400, as shown in FIG. Figure 7 In this way, the OLED mask 800 is completed.
[0079] On the other hand, in the present invention, the OLED mask 800 is manufactured by using a so-called hybrid etching method in which different etching methods are used in a first etching step of etching a part of the substrate 100 and a second etching step of etching the second surface 102 of the substrate 100. In addition, in the first etching step, a recessed portion 110 of a predetermined depth is formed on the first surface 101 of the substrate 100 by dry etching, and then in the second etching step, the thickness of the substrate 100 is etched to a desired thickness by wet etching, thereby manufacturing the OLED mask 800 having a thickness of approximately 10 μm to 20 μm or approximately 1 μm to 9 μm, which is thinner than the conventional technology.
[0080] On the other hand, when Figure 4 When etching the substrate 100 in part corresponding to the pattern and when Figure 6 When etching the second surface 102 of the substrate 100, an etching device used in conventional semiconductor equipment and devices is applicable, thereby eliminating the need to introduce additional equipment and devices for manufacturing the OLED mask 800, thereby reducing the cost and time required for constructing the device and equipment.
[0081] on the other hand, Figures 8 to 13 This is equivalent to a diagram showing a process of forming the metal film 200 on the first surface 501 of the substrate 500 to manufacture the OLED mask according to another embodiment of the present invention.
[0082] Figure 8 FIG. 5 is a diagram showing a step of forming a metal film 200 and a photosensitive film 300 on a first surface 501 of a substrate 500 according to another embodiment of the present invention.
[0083] First, if Figure 8 As shown in (A), the substrate 500 is provided. The substrate 500 is provided as a silicon-based substrate, but is not limited thereto.
[0084] The substrate 500 may include a first surface 501 and a second surface 502 located on the opposite side of the first surface 501. For example, the first surface 501 may correspond to the upper surface of the substrate 500, and the second surface 502 may correspond to the lower surface of the substrate 500.
[0085] Then, if Figure 8 As shown in (B), a metal film 200 may be formed on the first surface 501 of the substrate 500 .
[0086] The metal film 200 may be composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin (Sn), zinc-titanium (Zn-Ti), aluminum (Al), tungsten carbide and platinum, or an alloy of two or more thereof.
[0087] Preferably, the metal forming the metal film 200 may be made of beryllium, or an alloy of beryllium and any one or more selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum.
[0088] Such a metal film 200 can be formed on the first surface 501 of the substrate 500 by various methods. For example, the metal film can be welded to the first surface 501 of the substrate 500, or the metal can be evaporated on the first surface 501 of the substrate 500.
[0089] Here, the metal film may be manufactured by rolling the aforementioned metal or metal alloy. For example, when beryllium is used, the thickness of the metal film may be manufactured to be approximately 10 μm to 20 μm.
[0090] The metal film thus manufactured may be bonded to the first surface 501 of the substrate 500. The method of bonding the metal film to the substrate 500 may be applied to a substrate bonding device used in semiconductor equipment.
[0091] On the other hand, when the metal is evaporated on the first surface 501 of the substrate 500 , CVD (Chemical vapor deposition), sputtering, electron beam (e-beam) and the like may be used for the evaporation.
[0092] When the metal is evaporated, the metal may be evaporated on the first surface 501 of the substrate 500 to a thickness of approximately 10 μm to 20 μm or approximately 1 to 9 μm.
[0093] Then, it can be, Figure 8 As shown in (C), a photoresist film 300 is formed on the first surface 201 of the metal film 200 , and a pattern 310 is formed on the photoresist film 300 . Fig. 9 FIG. 1 is a diagram showing a state where the pattern 310 is formed on the photosensitive film 300 .
[0094] Reference Fig. 9A mask (not shown) is manufactured for accurately arranging sub-pixels of each color in consideration of the pixel structure of the OLED display, and such a mask is arranged above the photosensitive film 300 and irradiated with UV (ultra violet) light to form the pattern 310.
[0095] on the other hand, Fig.10 It is shown in Fig. 9 FIG. 5 is a diagram showing a state in which the metal film 200 and a portion of the substrate 500 are etched.
[0096] like Fig. 9 as well as Fig.10 As shown, after the pattern 310 is formed on the photosensitive film 300, the metal film 200 and the first surface 501 of the substrate 500 are etched corresponding to the pattern 310 to form a pattern recess 610. The first surface 501 of the substrate 500 may be etched with a predetermined thickness.
[0097] Fig.11 is an enlarged view of the Fig.10 Figure 1. A diagram of the “A” region.
[0098] Reference Fig.11 The pattern recessed portion 610 may be composed of the pattern 310 of the photosensitive film 300 , the middle hole 210 formed in the metal film 200 corresponding to the pattern 310 , and the recessed portion 510 of the first surface 501 of the substrate 500 formed corresponding to the middle hole 210 .
[0099] The etching step may be performed, for example, by dry etching, but is not limited thereto.
[0100] Then, in Fig.10 After the photosensitive film 300 is removed by using a solvent, Fig.12 Here, masking can be defined as the step of shielding the metal film 200 with the middle hole 210 and the substrate 500 with the recessed portion 510 using an appropriate shielding member 400. When the metal film 200 and the substrate 500 are shielded, the second surface 502 of the substrate 500 or a part below the second surface 502 can remain open.
[0101] The reason for performing masking in this way is that, when etching the second surface 502 of the substrate 500 as described later, the second surface 502 of the substrate 500 is etched to a predetermined thickness without affecting the upper metal film 200 .
[0102] Next, the second surface 502 of the substrate 500 is etched. Fig.13 It is shown in Fig.12FIG. 5 is a diagram showing a state in which the second surface 502 of the substrate 500 is etched.
[0103] Reference Fig.12 as well as Fig.13 The exposed second surface 502 of the substrate 500 may be etched from the open portion of the shielding member 400. For example, the etching may be performed by wet etching using a KOH solution.
[0104] Therefore, if Fig.13 As shown, a pattern hole 710 is formed penetrating the metal film 200 .
[0105] In addition, the substrate 500 may be configured to have a second surface 502 of the substrate 500 being etched to have a Fig.13 As shown in the figure, the opening 720 exposes a group of pattern holes 710 of the metal film 200. That is, the pattern holes 710 are formed in the metal film 200 and the insufficient rigidity of the metal film 200 is supplemented and improved by the substrate 500.
[0106] Fig.14 1 is a plan view showing a completed OLED mask 1800. Fig.14 As shown, when a plurality of pattern holes 710 are formed in the mask 1800 for OLED and an OLED is manufactured through the pattern holes 710 , an organic light emitting substance may be evaporated.
[0107] in addition, Fig.14 The OLED mask 1800 shown in FIG. 1 is similar to the above-mentioned embodiment, that is, according to Figure 7 The plan view of the OLED mask 800 is similar.
[0108] On the other hand, when manufacturing the OLED mask 1800 as in this embodiment, the metal film 200 is formed on the substrate 500, so that the substrate 500 prevents the metal film 200 from sagging, thereby enhancing the rigidity of the OLED mask 800 and making it easier to align.
[0109] In addition, when Figure 8 When the metal film 200 is welded or the metal is evaporated in step (B), Fig.10 When the metal film 200 and the substrate 500 are partially etched corresponding to the pattern and when Fig.12 When etching the second surface 502 of the substrate 500, welding devices, evaporation devices and etching devices used in previous semiconductor equipment and devices are applicable, so there is no need to add additional equipment and devices for manufacturing the mask 1800 for OLED, which can reduce the cost and time required for constructing the device and equipment.
[0110] The above description is made with reference to the preferred embodiments of the present invention, and those skilled in the art can make various modifications and changes to the present invention without departing from the concept and scope of the present invention as described in the attached claims. Therefore, if the implementation of the modification basically includes the constituent elements of the claims of the present invention, it should be deemed to be included in the technical scope of the present invention.
Claims
1. A method for manufacturing a mask for a metal-containing OLED, characterized in that: The method for manufacturing an OLED mask comprises: providing a substrate; A step of forming a photosensitive film on the first surface of the substrate; The step of forming a pattern on the photosensitive film; A first etching step of etching a portion of the substrate corresponding to the pattern; and A second etching step is performed to etch the second surface of the substrate to form pattern holes corresponding to the pattern.
2. The method for manufacturing an OLED mask according to claim 1, wherein: The substrate is made of metal.
3. The method for manufacturing an OLED mask according to claim 2, characterized in that: The etching methods in the first etching step and the second etching step are different from each other.
4. The method for manufacturing an OLED mask according to claim 2, wherein: In the first etching step, The substrate is partially etched by dry etching.
5. The method for manufacturing an OLED mask according to claim 2, wherein: In the second etching step, The second surface of the substrate is etched to a predetermined thickness by wet etching to form pattern holes corresponding to the pattern.
6. The method for manufacturing an OLED mask according to claim 5, characterized in that: In the second etching step, A frame portion that is not etched is formed at the edge of the substrate.
7. The method for manufacturing an OLED mask according to claim 2, wherein: The metal is made of a metal that can be etched both dry and wet.
8. The method for manufacturing an OLED mask according to claim 2, wherein: The substrate is composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum, or an alloy of two or more thereof.
9. The method for manufacturing an OLED mask according to claim 2, wherein: The substrate is made of beryllium, or an alloy of the beryllium and at least one selected from the group consisting of iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.
10. The method for manufacturing an OLED mask according to claim 1, wherein: The OLED mask manufacturing method further includes: forming a metal film on the first surface of the substrate, The photosensitive film is formed on the metal film.
11. The method for manufacturing an OLED mask according to claim 10, wherein: In the step of forming a metal film on the first surface of the substrate, The metal film is welded to the first surface of the substrate, or the metal is evaporated on the first surface of the substrate.
12. The method for manufacturing an OLED mask according to claim 10, wherein: The metal film is composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum, or an alloy of two or more thereof.
13. The method for manufacturing an OLED mask according to claim 10, wherein: The metal film is made of beryllium, or an alloy of the beryllium and at least one selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.
14. The method for manufacturing an OLED mask according to claim 10, wherein: In the first etching step, The metal film and a portion of the substrate are etched corresponding to the pattern.
15. The method for manufacturing an OLED mask according to claim 10, wherein: In the second etching step, The substrate is configured in a frame shape having an opening portion for exposing a group of pattern holes of the metal film.