Lifting type quartz material preparation device and preparation method

Abstract

The invention discloses a lifting type quartz material preparation device which comprises a reaction unit, a combustion unit and a supply unit, the reaction unit comprises a shell and a target material, the combustion unit comprises a combustor set, and the supply unit can convey reaction raw materials and combustion gas to the combustor set. The target material is large in size and can cover the flame range of the reaction combustors, the combustor set comprises the multiple reaction combustors, the flame area of the reaction combustors is large, in the preparation process, the target material rotates relative to the combustor set, and in combination with movement of the combustor set in the horizontal plane, the target material can be uniformly distributed. According to the invention, silicon dioxide powder generated by combustion reaction of a silicon-containing compound can be accumulated at the bottom of the target material to form a cylinder with a larger diameter, and the rotation of the target material is combined with the movement of the combustor group, so that the deposition uniformity of the silicon dioxide powder is ensured, and the utilization rate of raw materials is improved. The invention also provides a preparation method of the lifting type quartz material, which utilizes the preparation device of the lifting type quartz material.

Description

Technical Field

[0001] The invention relates to the technical field of quartz material preparation, and in particular to a Czochralski quartz material preparation device and a preparation method. Background Art

[0002] Traditional synthetic quartz technology uses silicon-containing compounds (usually silicon tetrachloride or silane) to produce chemical reactions in hydrogen or natural gas flames to generate silicon dioxide powder (or crystals). The powder is collected and deposited through a target material to eventually form the required silicon dioxide powder (or crystal) rod.

[0003] At present, there are two main ways to collect and deposit: the first is vertical, that is, through a vertical cylindrical target, a reaction flame is used to burn a certain position on its surface for deposition. The reaction flame torch is mainly set on the side and forms a certain angle with the vertical target. The second is horizontal, that is, through a horizontally set cylindrical target, a reaction flame is used to burn a certain position on its surface for deposition. The reaction flame torch is mainly set below the target, vertically upward or at a certain angle with the horizontal plane. The center line of the torch passes through the axis of the target to burn and deposit the target. The targets used in these two methods are all small-diameter cylindrical high-purity quartz materials. Affected by the production process and equipment, there are size restrictions on the deposited powder (or crystal), and it is difficult to make a powder (or crystal) rod with a large diameter (diameter greater than 500mm). Both methods have size restrictions on the deposited powder, and it is impossible to make a powder (or crystal) rod with a large diameter. Furthermore, since the target material is wrapped with flame during deposition, part of the raw material will be directly discharged into the air along with the outer flame, and the utilization rate of the raw material is low, generally around 50% to 60%. Summary of the invention

[0004] The object of the present invention is to provide a pulling type quartz material preparation device and preparation method to solve the problems existing in the above-mentioned related technologies, realize the preparation of large-diameter quartz rods, and improve the utilization rate of raw materials.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] The present invention provides a Czochralski quartz material preparation device, comprising:

[0007] A reaction unit, the reaction unit comprising a shell and a target material, the shell having a reaction chamber, the target material being rotatably disposed in the reaction chamber and capable of reciprocating in a vertical direction;

[0008] A combustion unit, wherein the combustion unit comprises a burner group, wherein the burner group comprises a plurality of reaction burners arranged in sequence, wherein the burner group is arranged below the target material, and the projection of the target material in the horizontal plane can always cover the flame range of the burner group; and the burner group can reciprocate in the horizontal direction;

[0009] A supply unit is connected to the burner group, and the supply unit can deliver reaction raw materials and combustion gas to the burner group, so that the silicon-containing compound burns and reacts to generate silicon dioxide and accumulates at the bottom of the target to form a column.

[0010] Preferably, the reaction unit further comprises a rotating spindle, one end of which extends into the reaction chamber and is connected to the target material, and the rotating spindle can drive the target material to rotate.

[0011] Preferably, the rotating spindle includes a core shaft and a sleeve, the sleeve is rotatably sleeved on the outside of the core shaft with a bearing arranged therebetween, one end of the core shaft is connected to a rotating driver, the other end of the core shaft is connected to the target material, the sleeve is slidably connected to the shell, and the end of the sleeve away from the target material is connected to a lifting tower, the lifting tower can drive the rotating spindle and the target material to reciprocate in the vertical direction.

[0012] Preferably, the shell further has an installation cavity, the installation cavity is located below the reaction cavity and the two are connected, a moving mechanism is provided in the installation cavity, the burner group is connected to the moving mechanism, and the moving mechanism can drive the burner group to reciprocate in the horizontal direction.

[0013] Preferably, a partition is provided in the shell to separate the inner cavity of the shell into the reaction cavity and the installation cavity, and the partition is provided with connecting holes and burner holes. There are multiple connecting holes, and the connecting holes are evenly distributed on the partition. One end of the burner group is connected to the moving mechanism, and one end of the flame outlet of the burner group extends into the reaction cavity from the burner hole.

[0014] Preferably, the reaction burners are arranged in a straight line, and the intervals between adjacent reaction burners are adjustable.

[0015] Preferably, the combustion unit also includes an auxiliary burner, which is arranged in the reaction chamber and located on the side of the burner group, and the flame outlet of the auxiliary burner is arranged toward the silica powder column accumulated at the bottom of the target material. The auxiliary burner is connected to the supply unit, and the supply unit can transport combustion gas to the auxiliary burner so that the auxiliary burner heats the silica powder column accumulated at the bottom of the target material.

[0016] Preferably, the number of the auxiliary burners is multiple groups, and the auxiliary burners are evenly distributed circumferentially around the axis of the target;

[0017] A support rod is also provided in the reaction chamber, one end of the support rod is connected to the shell, and the other end of the support rod is connected to the auxiliary burner, and the support rod corresponds to the auxiliary burner one by one.

[0018] The present invention also provides a method for preparing a Czochralski quartz material, using the above-mentioned Czochralski quartz material preparation device, comprising the following steps:

[0019] The distance between the target material and the flame port of the burner group is adjusted to rotate the target material; the supply unit delivers combustion gas to the burner group, and the burner group bakes and heats the target material using the combustion flame;

[0020] After baking the target material, the supply unit introduces the reaction raw materials into the burner group, and the silicon-containing compound is burned to generate silicon dioxide powder which is accumulated at the bottom of the target material to form a column.

[0021] Preferably, the flow rate of the reaction raw material introduced into the reaction burner gradually increases along the direction gradually approaching the target axis.

[0022] Compared with the related art, the present invention has achieved the following technical effects: the pulling-type quartz material preparation device of the present invention includes a reaction unit, a combustion unit and a supply unit, wherein the reaction unit includes a shell and a target material, a reaction chamber is provided in the shell, the target material is rotatably arranged in the reaction chamber, and can reciprocate in the vertical direction; the combustion unit includes a burner group, the burner group includes a plurality of reaction burners arranged in sequence, the burner group is arranged below the target material, and the projection of the target material in the horizontal plane can always cover the flame range of the burner group; the burner group can reciprocate in the horizontal direction; the supply unit is connected to the burner group, and the supply unit can transport reaction raw materials and combustion gas to the burner group, so that the silicon-containing compound burns to react to generate silicon dioxide and accumulates at the bottom of the target material to form a column.

[0023] The pull-type quartz material preparation device of the present invention has a reaction chamber of the shell that provides a preparation space for the preparation of quartz materials, the target material can be rotatably arranged in the reaction chamber, and the burner group includes a plurality of reaction burners arranged below the target material. During the preparation process, the supply unit can deliver combustion gas and reaction raw materials to the reaction burner, so that the silicon-containing compound burns to generate silicon dioxide and accumulates at the bottom of the target material to form a column. The target material of the present invention is relatively large in size and can cover the flame range of the reaction burner, and the burner group includes a plurality of reaction burners, and the flame area of ​​the reaction burner is relatively large. During the preparation process, the target material rotates relative to the burner group, and combined with the movement of the burner group in the horizontal plane, the silicon dioxide powder generated by the combustion reaction of the silicon-containing compound can be accumulated at the bottom of the target material to form a column with a larger diameter, and the rotation of the target material combined with the movement of the burner group ensures the uniformity of the silicon dioxide powder deposition, while improving the raw material utilization rate.

[0024] The present invention also provides a method for preparing a Czochralski quartz material. By using the above-mentioned Czochralski quartz material preparation device, the Czochralski quartz material preparation method of the present invention can naturally also achieve the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is an axonometric diagram of a Czochralski quartz material preparation device disclosed in an embodiment of the present invention;

[0027] Figure 2 It is a front view schematic diagram of a Czochralski quartz material preparation device disclosed in an embodiment of the present invention;

[0028] Figure 3 A schematic diagram of the positions of a burner group and a target material in a Czochralski quartz material preparation method disclosed in an embodiment of the present invention;

[0029] Figure 4 The figure is a schematic diagram of the moving combustion trajectory of the burner group in the Czochralski quartz material preparation method disclosed in an embodiment of the present invention.

[0030] In the figure: 1. Shell; 2. Reaction chamber; 3. Target; 4. Burner group; 5. Reaction burner; 6. Rotating spindle; 7. Lifting tower; 8. Partition; 9. Installation chamber; 10. Moving mechanism; 11. Auxiliary burner; 12. Column. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] The object of the present invention is to provide a pulling type quartz material preparation device and preparation method to solve the problems existing in the above-mentioned related technologies, realize the preparation of large-diameter quartz rods, and improve the utilization rate of raw materials.

[0033] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0034] Embodiment 1

[0035] The present embodiment provides a pulling-type quartz material preparation device, including a reaction unit, a combustion unit and a supply unit, wherein the reaction unit includes a shell 1 and a target material 3, the shell 1 has a reaction chamber 2, the target material 3 is rotatably arranged in the reaction chamber 2, and can reciprocate in the vertical direction; the combustion unit includes a burner group 4, the burner group 4 includes a plurality of reaction burners 5 arranged in sequence, the burner group 4 is arranged below the target material 3, and the projection of the target material 3 in the horizontal plane can always cover the flame range of the burner group 4; the burner group 4 can reciprocate in the horizontal direction; the supply unit is connected to the burner group 4, and the supply unit can transport reaction raw materials and combustion gases to the burner group 4, so that the silicon-containing compound burns and reacts to generate silicon dioxide and accumulates at the bottom of the target material 3 to form a column 12.

[0036] In the pulling-type quartz material preparation device of the present invention, the reaction chamber 2 of the shell 1 provides a preparation space for the preparation of quartz materials, the target material 3 is rotatably arranged in the reaction chamber 2, and the burner group 4 includes a plurality of reaction burners 5 arranged below the target material 3. During the preparation process, the supply unit can deliver combustion gas and reaction raw materials to the reaction burner 5, so that the silicon-containing compound is burned to generate silicon dioxide and accumulates at the bottom of the target material 3 to form a column 12. The target material 3 of the present invention is relatively large in size and can cover the flame range of the reaction burner 5, and the burner group 4 includes a plurality of reaction burners 5, and the flame area of ​​the reaction burner 5 is relatively large. During the preparation process, the target material 3 rotates relative to the burner group 4, and the burner group 4 moves in a horizontal plane, so that the silicon dioxide powder generated by the combustion reaction of the silicon-containing compound can be accumulated at the bottom of the target material 3 to form a column 12 with a larger diameter, and the rotation of the target material 3 combined with the movement of the burner group 4 ensures the uniformity of the silicon dioxide powder deposition, while improving the raw material utilization rate.

[0037] It needs to be explained here that combustion gas refers to the gas introduced to achieve the purpose of combustion. In actual applications, combustible gas and combustion-supporting gas can be introduced to achieve combustion, such as hydrogen, natural gas and oxygen.

[0038] Among them, the reaction unit also includes a rotating spindle 6, one end of which extends into the reaction chamber 2 and is connected to the target material 3. The rotating spindle 6 can drive the target material 3 to rotate, improve the controllability of the rotation of the target material 3, ensure the rotational motion accuracy of the target material 3, and provide protection for the subsequent preparation of quartz material rods. It should be noted that the target material 3 is a quartz disk, and when the burner group 4 reciprocates in the horizontal direction, the quartz disk can always cover the flame area of ​​the burner group 4. There is a cylindrical quartz tail handle at the center of the quartz disk, and the end of the tail handle has a spherical structure or a pin hole structure, which is used to fix and dock with the rotating spindle 6 to ensure the reliability of the movement of the target material 3.

[0039] In this specific embodiment, the rotating main shaft 6 includes a core shaft and a sleeve, the sleeve is rotatably sleeved on the outside of the core shaft and a bearing is arranged between the two, one end of the core shaft is connected to a rotating driver, and the other end of the core shaft is connected to the target material 3, and the rotating driver can drive the target material 3 to rotate by using the core shaft. The sleeve is slidably connected to the housing 1, and the end of the sleeve away from the target material 3 is connected to a lifting tower 7, and the lifting tower 7 can drive the rotating main shaft 6 and the target material 3 to reciprocate in the vertical direction. The rotating main shaft 6 adopts the structure of the core shaft and the sleeve, and the core shaft can drive the target material 3 to rotate. Under the premise of not affecting the rotation of the core shaft, the lifting tower 7 drives the core shaft and the target material 3 to reciprocate in the vertical direction by using the sleeve to ensure that the distance between the target material 3 and the burner group 4 meets the deposition preparation requirements.

[0040] Specifically, the housing 1 also has an installation cavity 9, which is located below the reaction cavity 2 and the two are connected. A moving mechanism 10 is provided in the installation cavity 9, and the burner group 4 is connected to the moving mechanism 10. The moving mechanism 10 can drive the burner group 4 to reciprocate in the horizontal direction. The moving mechanism 10 drives the burner group 4 to reciprocate and adjusts the position of the burner group 4 so that the target material 3 can evenly collect silicon dioxide powder or crystals. In practical applications, the moving mechanism 10 can be provided with a guide rail to ensure the accuracy of the movement of the burner group 4.

[0041] More specifically, a partition 8 is provided in the shell 1 to separate the inner cavity of the shell 1 into a reaction chamber 2 and an installation chamber 9. A connecting hole and a burner hole are provided on the partition 8. The number of connecting holes is multiple, and the connecting holes are evenly distributed on the partition 8 to ensure the connection between the reaction chamber 2 and the installation chamber 9. One end of the burner group 4 is connected to the moving mechanism 10, and one end of the flame outlet of the burner group 4 extends into the reaction chamber 2 through the burner hole. In practical applications, an air supply and exhaust system can be provided to communicate with the reaction chamber 2 to control the pressure in the reaction chamber 2 so that the pressure of the reaction chamber 2 is maintained within a certain negative pressure range, thereby controlling the reaction materials in the reaction chamber 2 for easy collection, avoiding the reaction materials from being affected by the external environment, and preventing the reaction materials from affecting the environment. The shell 1 can be made of quartz or metal material. In this specific embodiment, the partition 8 is made of metal material.

[0042] In this specific embodiment, the reaction burners 5 are arranged in a straight line, the spacing between adjacent reaction burners 5 can be adjusted, the burner group 4 moves in the horizontal direction, and the target material 3 rotates around an axis parallel to the vertical direction to ensure the uniformity of silicon dioxide powder deposition, and the spacing between the reaction burners 5 is adjusted to meet different deposition preparation requirements. In practical applications, the reaction burners 5 can also be arranged in other ways, such as in a matrix structure.

[0043] Furthermore, the combustion unit also includes an auxiliary burner 11, which is arranged in the reaction chamber 2 and located on the side of the burner group 4, and the flame outlet of the auxiliary burner 11 is arranged toward the silicon dioxide powder column 12 accumulated at the bottom of the target material 3. The auxiliary burner 11 is connected to the supply unit, and the supply unit can transport combustion gas to the auxiliary burner 11, so that the auxiliary burner 11 heats the silicon dioxide powder column 12 accumulated at the bottom of the target material 3. The auxiliary burner 11 can be used to continuously heat the collected reactants, enhance the powder strength on the surface of the generated column 12, and avoid the column 12 from breaking during the continuous accumulation process.

[0044] In practical applications, there may be multiple groups of auxiliary burners 11 to improve the heating efficiency of the powder on the surface of the column 12. When multiple groups of auxiliary burners 11 are provided, the auxiliary burners 11 are evenly distributed around the axis of the target material 3 to improve heating uniformity.

[0045] A support rod is also provided in the reaction chamber 2, one end of the support rod is connected to the shell 1, and the other end of the support rod is connected to the auxiliary burner 11. The support rod provides stable support for the auxiliary burner 11. At the same time, the support rod can also be used to adjust the angle of the auxiliary burner 11, so that the column 12 is auxiliary heated in a direction perpendicular to the axis of the column 12 or at a certain angle to the axis of the column 12. The support rod corresponds to the auxiliary burner 11 one by one.

[0046] In addition, it is necessary to explain that, in practical applications, a protective cover may be provided outside the reaction burner 5 and the auxiliary burner 11, and the protective cover may be made of quartz material.

[0047] In addition, the supply unit is also equipped with a purge gas circuit. After the device is finished working, the purge gas circuit can be used to purge the pipelines for conveying gas and reaction materials to remove residual gas, providing convenience for subsequent production.

[0048] Embodiment 2

[0049] This embodiment provides a method for preparing a Czochralski quartz material, using the Czochralski quartz material preparation device of the first embodiment, comprising the following steps:

[0050] The distance between the target material 3 and the flame port of the burner group 4 is adjusted, and the target material 3 is rotated; the supply unit delivers combustion gas to the burner group 4, and the burner group 4 bakes and heats the target material 3 with the combustion flame;

[0051] After the target material 3 is baked, the supply unit introduces the reaction raw materials into the burner group 4 , and the silicon-containing compound burns and reacts to generate silicon dioxide powder which accumulates at the bottom of the target material 3 to form a column 12 .

[0052] The pulling quartz material preparation method of the present invention can prepare large-diameter silicon dioxide powder (or crystal) rods, while improving the utilization rate of raw materials and reducing the loss of silicon dioxide material caused by the failure of the outer flame to wrap the target material 3. After the large-diameter silicon dioxide powder (or crystal) rods are made, they can be made into large-diameter high-purity quartz ingots through subsequent sintering and other processes (crystals are not required).

[0053] It should be emphasized that the flow rate of the reaction raw material introduced into the reaction burner 5 gradually increases in the direction gradually approaching the axis of the target material 3, so as to ensure the uniformity of the deposition of the silicon dioxide material.

[0054] Embodiment 3

[0055] This embodiment provides a method for preparing a Czochralski quartz material, using the Czochralski quartz material preparation device of the first embodiment, and the specific operations are as follows:

[0056] The burner group 4 includes 7 reaction burners 5 arranged in sequence along the diameter direction of the target material 3, namely reaction burners 5 No. 1 to 7, such as Figure 3 As shown, initially, the No. 4 reaction burner 5 is directly facing the center of the target 3 .

[0057] At the beginning of the process, the target material 3 and the reaction burner 5 port are controlled at a certain distance. Assuming that the flame distance of the reaction burner 5 is H, the distance between the end face of the target material 3 and the reaction burner 5 port is 0.6-0.8H, and the rotation is turned on, the rotation speed is less than 10r / min, and the burner group 4 is introduced with combustible gas (hydrogen or natural gas) and combustion-supporting gas (oxygen). At this time, the flow rate of the combustible gas is small (usually less than 10L / min), and the combustion-supporting gas is introduced according to a certain proportion (the ratio of hydrogen: oxygen is in the range of 1:2-1:3, and the natural gas is mixed in the reaction burner 5 and then the mixed gas is introduced. The initial mixing ratio of natural gas to oxygen is in the range of 3:5-4:5). When the gas is ejected from the reaction burner 5, it is ignited. After the ignition is normal, the flow rate of the combustible gas is increased appropriately, and the oxygen flow rate is increased proportionally at the same time. After the flame becomes larger, the reaction raw materials are not introduced first. The target material 3 is baked and heated by the flame. When the temperature is increased, the burner group 4 is translated with a movement stroke of L. After several rounds of back and forth, the reaction raw materials are introduced. When the No. 4 reaction burner 5 returns to the center position of the target material 3, all reaction burners 5 begin to introduce reaction raw materials.

[0058] The reaction raw material flow rate is introduced according to a certain ratio, and the flow rate of the No. 4 reaction burner 5 closest to the center of the circle is set to AL / min;

[0059] The flow rate of the No. 5 reaction burner 5 is nAL / min;

[0060] The flow rate of the No. 6 reaction burner 5 is 2nAL / min;

[0061] The flow rate of the No. 7 reaction burner 5 is 3nAL / min;

[0062] Here, n is a proportionality coefficient greater than 1.

[0063] At this time, the flow rate of the No. 3 reaction burner 5 is equal to the flow rate of the No. 5 reaction burner 5, the flow rate of the No. 2 reaction burner 5 is equal to the flow rate of the No. 6 reaction burner 5, and the flow rate of the No. 1 reaction burner 5 is equal to the flow rate of the No. 7 reaction burner 5. After the target 3 rotates one circle, the burner group 4 starts to move horizontally, and the moving distance is L / b, where b is the number of times the entire stroke L is completed, which is an integer and can be set according to the actual working conditions. The target 3 continues to rotate, and after the burner moves to the specified position:

[0064] The flow rate of the No. 4 reaction burner 5 is adjusted to (1+△n)AL / min, where: △n=(n-1)×b;

[0065] The flow rate of the No. 5 reaction burner 5 is (n+△n)AL / min;

[0066] The flow rate of the No. 6 reaction burner 5 is 2(n+△n)AL / min;

[0067] The flow rate of the No. 7 reaction burner 5 is 3(n+△n)AL / min;

[0068] The flow rate after moving N times corresponds to:

[0069] The flow rate of the No. 4 reaction burner 5 is: (1+N△n)AL / min;

[0070] The flow rate of the No. 5 reaction burner 5 is: (n+N△n)AL / min;

[0071] The flow rate of the No. 6 reaction burner 5 is: 2(n+N△n)AL / min;

[0072] The flow rate of the No. 7 reaction burner 5 is: 3(n+N△n)AL / min.

[0073] Correspondingly, the raw material flow rate of No. 1 / 2 / 3 reaction burners 5 is gradually reduced.

[0074] They are: the flow rate of No. 3 reaction burner 5 is (n-△n)AL / min;

[0075] The flow rate of the No. 2 reaction burner 5 is 2(n-△n)AL / min;

[0076] The flow rate of the No. 1 reaction burner 5 is 3(n-△n)AL / min.

[0077] The flow rate after moving N times is:

[0078] The flow rate of the No. 3 reaction burner 5 is: (n-△n)AL / min;

[0079] The flow rate of the No. 2 reaction burner 5 is: 2(n-△n)AL / min;

[0080] The flow rate of the No. 1 reaction burner 5 is: 3(n-△n)AL / min.

[0081] When the stroke reaches L, it starts to return. At this time, the No. 3 reaction burner 5 is at the center of the target 3. At this time, its flow rate is AL / min. When returning, the return distance is L / b. The flow rates of the No. 1 / 2 / 3 reaction burners 5 begin to increase. When moving for the first time, the flow rates are:

[0082] The flow rate of the No. 3 reaction burner 5 is: (1+△n)AL / min;

[0083] The flow rate of the No. 2 reaction burner 5 is: n+△n)AL / min;

[0084] The flow rate of the No. 1 reaction burner 5 is: 2(n+△n)AL / min;

[0085] The flow rate after moving N times is:

[0086] The flow rate of the No. 3 reaction burner 5 is: (1+N△n)AL / min;

[0087] The flow rate of the No. 2 reaction burner 5 is: (n+N△n)AL / min;

[0088] The flow rate of the No. 1 reaction burner 5 is: 2(n+N△n)AL / min.

[0089] Correspondingly, the flow rates of torches 4 / 5 / 6 / 7 begin to decrease, and the flow rates when they move for the Nth time are:

[0090] The flow rate of the No. 4 reaction burner 5 is: (nN△n)AL / min;

[0091] The flow rate of the No. 5 reaction burner 5 is: 2(nN△n)AL / min;

[0092] The flow rate of the No. 6 reaction burner 5 is: 3 (nN△n)AL / min;

[0093] The flow rate of reaction burner 5 No. 7 is: 4 (nN△n)AL / min.

[0094] When the No. 3 reaction burner 5 returns to the center position of the target material 3, one round of deposition is completed.

[0095] Repeat the above steps, the target 3 deposits more and more silicon dioxide powder (or crystals), and accordingly, the target 3 starts to move upward as the deposition height increases, so that the deposition bottom surface maintains a distance interval of 0.6 to 0.8H from the position of the burner group 4. At the same time, the auxiliary burner 11 continues to heat the side of the powder column 12 to vitrify its surface and enhance its strength, thereby preventing the column 12 from cracking and damage during the deposition process.

[0096] Through the deposition of the above steps, the silicon dioxide powder (or crystal) is uniformly deposited on the target material 3. Finally, the silicon dioxide powder (or crystal) column 12 with a large diameter size that we need is obtained.

[0097] Schematic diagram of deposition trajectory Figure 4 shown.

[0098] It should be noted that the flow rates of hydrogen / natural gas for preparing silica powder and crystal are inconsistent. The flow rate required for preparing crystals is greater than the flow rate for preparing powders, while the raw material flow rate for preparing crystals is less than that for preparing powders.

[0099] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A Czochralski quartz material preparation device, characterized in that: include: A reaction unit, the reaction unit comprising a shell and a target material, the shell having a reaction chamber, the target material being rotatably disposed in the reaction chamber and capable of reciprocating in a vertical direction; A combustion unit, wherein the combustion unit comprises a burner group, wherein the burner group comprises a plurality of reaction burners arranged in sequence, wherein the burner group is arranged below the target material, and the projection of the target material in the horizontal plane can always cover the flame range of the burner group; and the burner group can reciprocate in the horizontal direction; A supply unit is connected to the burner group, and the supply unit can deliver reaction raw materials and combustion gas to the burner group, so that the silicon-containing compound burns and reacts to generate silicon dioxide and accumulates at the bottom of the target to form a column.

2. The pulling type quartz material preparation device according to claim 1, characterized in that: The reaction unit further comprises a rotating main shaft, one end of which extends into the reaction chamber and is connected to the target material, and the rotating main shaft can drive the target material to rotate.

3. The Czochralski quartz material preparation device according to claim 2, characterized in that: The rotating spindle includes a core shaft and a sleeve, the sleeve is rotatably sleeved on the outside of the core shaft with a bearing arranged therebetween, one end of the core shaft is connected to a rotating driver, the other end of the core shaft is connected to the target material, the sleeve is slidably connected to the shell, and the end of the sleeve away from the target material is connected to a lifting tower, the lifting tower can drive the rotating spindle and the target material to reciprocate in the vertical direction.

4. The Czochralski quartz material preparation device according to claim 1, characterized in that: The shell also has an installation cavity, which is located below the reaction cavity and the two are connected. A moving mechanism is provided in the installation cavity, and the burner group is connected to the moving mechanism. The moving mechanism can drive the burner group to reciprocate in the horizontal direction.

5. The Czochralski quartz material preparation device according to claim 4, characterized in that: A partition is provided in the shell to separate the inner cavity of the shell into the reaction cavity and the installation cavity, and a connecting hole and a burner hole are provided on the partition. There are multiple connecting holes, and the connecting holes are evenly distributed on the partition. One end of the burner group is connected to the moving mechanism, and one end of the flame outlet of the burner group extends into the reaction cavity from the burner hole.

6. The Czochralski quartz material preparation device according to any one of claims 1 to 5, characterized in that: The reaction burners are arranged in a straight line, and the distance between adjacent reaction burners can be adjusted.

7. The pulling type quartz material preparation device according to any one of claims 1 to 5, characterized in that: The combustion unit also includes an auxiliary burner, which is arranged in the reaction chamber and located on the side of the burner group. The flame outlet of the auxiliary burner is arranged toward the silica powder column accumulated at the bottom of the target material. The auxiliary burner is connected to the supply unit, and the supply unit can transport combustion gas to the auxiliary burner so that the auxiliary burner heats the silica powder column accumulated at the bottom of the target material.

8. The Czochralski quartz material preparation device according to claim 7, characterized in that: The number of the auxiliary burners is multiple groups, and the auxiliary burners are evenly distributed around the axis of the target material; A support rod is also provided in the reaction chamber, one end of the support rod is connected to the shell, and the other end of the support rod is connected to the auxiliary burner, and the support rod corresponds to the auxiliary burner one by one.

9. A method for preparing a Czochralski quartz material, characterized in that: The Czochralski quartz material preparation device according to any one of claims 1 to 8 comprises the following steps: The distance between the target material and the flame port of the burner group is adjusted to rotate the target material; the supply unit delivers combustion gas to the burner group, and the burner group bakes and heats the target material using the combustion flame; After baking the target material, the supply unit introduces the reaction raw materials into the burner group, and the silicon-containing compound is burned to generate silicon dioxide powder which is accumulated at the bottom of the target material to form a column.

10. The method for preparing a Czochralski quartz material according to claim 9, characterized in that: As the flow rate of the reaction raw material entering the reaction burner gradually increases in a direction gradually approaching the target axis.

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