Silanized polyphenyl ether resin and preparation method thereof as well as high-temperature-resistant low-dielectric material and preparation method thereof

Abstract

The invention discloses silanized polyphenyl ether resin and a preparation method thereof, and a high-temperature-resistant low-dielectric material and a preparation method thereof. The preparation method of the high-temperature-resistant low-dielectric material comprises the following steps: reacting polyphenyl ether resin with a brominating agent to obtain brominated polyphenyl ether resin, and carrying out amination reaction on the brominated polyphenyl ether and allylamine to obtain polyphenyl ether resin with high allyl content; the preparation method comprises the following steps: under the action of a photoinitiator, carrying out sulfydryl-alkene click chemical reaction on allyl polyphenyl ether resin and sulfydryl silane under an ultraviolet light condition to obtain silanized polyphenyl ether resin, or carrying out hydrosilylation reaction on the allyl polyphenyl ether resin and hydrogen-containing silane under the action of a catalyst to obtain the silanized polyphenyl ether resin; and carrying out moisture curing under the action of a catalyst to obtain the high-temperature-resistant low-dielectric material with excellent performance. The preparation and curing method is simple and convenient, the raw materials are easy to obtain, moisture curing can be realized, and the cured material has the characteristics of excellent high temperature resistance and low dielectric property.

Description

Technical Field

[0001] The present invention relates to the field of polymer material synthesis and preparation, and in particular to a silylated polyphenylene ether resin and a preparation method thereof, a high temperature resistant low dielectric material and a preparation method thereof. Background Art

[0002] Polyphenylene ether resin is commonly used in the fields of electronics, automotive industry, machinery industry, chemical parts, etc. due to its excellent mechanical strength, creep resistance, heat resistance, flame retardancy, water resistance and low dielectric properties. However, due to its lack of active functional groups, high melt viscosity, poor fluidity and difficulty in processing and molding, its actual application is mostly polyphenylene ether blends or alloys, such as polystyrene, polyamide, polyphenylene sulfide, polysiloxane and other elastomers, etc., whose processing temperature is relatively high, and the blend itself has a great influence on the dielectric properties, hygroscopic properties, mechanical properties, heat resistance, etc. of polyphenylene ether, which greatly limits the application of polyphenylene ether resin in the field of electronic materials; in addition, the active functionalization of polyphenylene ether resin mainly includes end group epoxidation and allylation. Compared with polyphenylene ether resin with larger molecular weight, this difunctional end group modification has a low crosslinking density after curing, which affects its temperature resistance and dielectric properties. In particular, epoxidation increases the content of polar groups, and the hydroxyl groups generated after ring opening have a high polarizability, which is not conducive to the application of low dielectric scenes. Therefore, non-polar / weakly polar multi-active point curing to improve the heat resistance, low dielectric properties and mechanical properties of polyphenylene ether resin is an effective strategy to solve this problem, which is of great significance to the application of polyphenylene ether resin in the field of electronic materials.

[0003] In terms of polyphenylene ether modification, by selecting non-polar or weakly polar polymers with good temperature resistance to copolymerize, its mechanical properties and heat resistance are improved on the basis of low dielectric properties. Patent of invention CN118515878A (Chen Xing, Hou Songbin, Ma Junxian, etc.) realizes the molecular level block copolymerization of polyphenylene ether / polyimide for the problem of insufficient dielectric properties of polyphenylene ether / polyimide alloy by reaction, realizes the reduction of dielectric properties and ensures heat resistance so that it can be used in the field of electronic product packaging of high speed and high frequency. However, this method is to optimize the dielectric properties carried out on the basis of ensuring the temperature resistance of polyphenylene ether / polyimide alloy, and its polyimide block itself has a large dipole moment, which is unfavorable for the dielectric properties of polyphenylene ether resin. In addition, this material is two rigid heat-resistant resin structure copolymers, and the melt viscosity is large, and there is no active functional group, it is difficult to form a cross-linked network, which affects its mechanical properties. Invention patent CN117794982A (F. Sandmeyer) prepares a molding product binder with constant dielectric properties by using a hydroxyl-terminated homopolymer or copolymer polyphenylene ether and a phenol compound in the presence of chlorosilane and water. The method is based on the reaction of chlorosilane with water to generate silanol, which is then dehydrated with the hydroxyl-terminated polyphenylene ether to form a crosslinked product, wherein the chlorosilane acts as a crosslinking point. During this reaction, the chlorosilane reacts with water to generate weakly acidic silicic acid, which is not conducive to the reduction of dielectric properties. In addition, the chlorosilicic acid contains free chloride ions, which will promote the dissolution reaction of metals in electronic devices, accelerate ion migration, and deteriorate the performance of the device. Furthermore, the reaction of chlorosilicic acid with water will produce HCl, which is highly corrosive to electronic devices. The material is not suitable for the packaging of microelectronic materials. The method of reducing the dielectric constant of a material is usually to reduce its polarizability and dipole moment from the molecular level, and to improve the free volume of the material. Since the fluorine element has a large atomic radius, the free volume can be improved. The dipole of the CF bond is small and the polarizability is low. Therefore, introducing the fluorine element in the material is an effective way. Invention patent CN110746594A (Zhang Cailiang, Song Shungang, Yan Qinyu, etc.) redistributes the reaction in an organic solvent by low molecular weight polyphenylene ether, fluorinated polyphenol compound and free radical initiator, and post-processing obtains low molecular weight fluorinated polyphenylene ether. The resulting composite material has a lower dielectric constant, dielectric loss factor and water absorption rate than fluorine-free similar materials, but the low molecular weight fluorinated polyphenylene ether material obtained by the method is only the optimization of the molecular chain, and does not have activity, and needs to be blended and cured with epoxy resin, and polar and non-polar heterogeneous structure resins are blended, and the compatibility of the two is poor, and the fluorinated polyphenylene ether with less relative content greatly weakens the comprehensive performance of the material. Summary of the invention

[0004] In view of the problems in the background technology, the object of the present invention is to provide a silylated polyphenylene ether resin and a preparation method thereof, a high temperature resistant low dielectric material and a preparation method thereof, first by preparing a side allyl polyphenylene ether resin, introducing a diallyl structure in the polyphenylene ether molecular structure, compared with the traditional terminal allyl type polyphenylene ether, the content of the active functional group allyl in the resin is greatly increased, and through the Click reaction or hydrosilylation reaction of the double bond and mercaptosilane, a silane small molecule short chain containing multiple methoxy groups and ethoxy groups is introduced into the polyphenylene ether resin, and this multi-active site can be further formed by wet curing reaction with water molecules in the air. The resin does not contain a strong polar group, and the non-polar silane segment ensures low dielectric properties, and the multi-functional cross-linking of the polyphenylene ether rigid skeleton and the short-chain silane improves the cross-linking density, improves the temperature resistance, and maintains excellent hydrophobicity and flame retardant properties. And the solvent method improves its processability and the force between various fillers, and the wet curing method is simple to construct, and can be applied to multiple environments, especially for the practical application of the electronics industry. It is of great significance.

[0005] One of the purposes of the present invention is to provide a method for preparing a silylated polyphenylene ether resin, which comprises the following steps: (1) reacting polyphenylene ether with a brominating agent to obtain brominated polyphenylene ether; (2) reacting brominated polyphenylene ether with an allyl compound to obtain an allyl polyphenylene ether resin; and (3) reacting the allyl polyphenylene ether resin with mercaptosilane or hydrogen-containing silane to obtain a silylated polyphenylene ether resin.

[0006] Optionally, in step (1), the brominating agent is at least one of N-bromosuccinimide, N-bromo-o-sulfonylbenzene imide, 1,3-dibromo-5,5-dimethylhydantoin, 4-carbon tetrabromide, and 1,3,5-tribromo-1,3,5-triazine-2,4,6-trione.

[0007] Optionally, the brominating agent in step (1) is N-bromosuccinimide.

[0008] Optionally, the allyl compound in step (2) is diallylamine.

[0009] Optionally, the mercaptosilane is at least one of 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropylmethyldiethoxysilane.

[0010] Optionally, the mercaptosilane is 3-mercaptopropyltrimethoxysilane.

[0011] Optionally, the hydrogen-containing silane is at least one of trimethoxysilane and triethoxysilane.

[0012] The second object of the present invention is to provide a silane-containing polyphenylene ether resin obtained by the preparation method as described above, which is a silylated polyphenylene ether resin.

[0013] The third object of the present invention is to provide a high temperature resistant low dielectric material and a preparation method thereof, wherein the silanized polyphenylene ether resin and tetrahydrofuran as described above are fully dissolved in a mass ratio of 1: (3 to 6), and then the silanized polyphenylene ether resin and a catalyst are added in a mass ratio of 1: (0.005 to 0.02) and mixed, and then cured at room temperature for 24 hours, and then cured at 180°C for 2 hours to obtain the high temperature resistant low dielectric material.

[0014] Optionally, the catalyst is at least one of dibutyltin dilaurate, dimethyltin dilaurate, dioctyltin dilaurate, dibutyltin oxide, dibutyltin dibutyrate, dimethyltin dibutyrate, dioctyltin dibutyrate, dibutyltin diacetate, dimethyltin diacetate, dioctyltin diacetate, butyltin maleate, methyltin maleate, and octyltin maleate.

[0015] The beneficial results of the present invention are as follows:

[0016] The preparation method of the present invention can prepare silanized polyphenylene ether resin with excellent performance. The preparation and curing methods are simple, the raw materials are easy to obtain, and wet curing can be achieved. The cured material has high temperature resistance, low dielectric properties, good flame retardant properties and a low thermal expansion coefficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is the molecular structure of the allyl polyphenylene ether resin SLPPO in Example 1.

[0018] Figure 2 This is the infrared spectrum of the allyl polyphenylene ether resin SLPPO of Example 1.

[0019] Figure 3 This is the DMA diagram of the high temperature resistant low dielectric material in Example 1.

[0020] Figure 4 This is the TG diagram of the high temperature resistant low dielectric material in Example 1.

[0021] Figure 5 Graph showing the relationship between the dielectric constant, dielectric loss and frequency of the high temperature resistant low dielectric material in Example 1.

[0022] Figure 6 This is the TMA diagram of the high temperature resistant low dielectric material in Example 1. DETAILED DESCRIPTION

[0023] In order to make the above-mentioned objects, features and advantages of the invention more obvious and easy to understand, the specific embodiments of the invention are described in detail below.

[0024] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0025] The preparation method of the allyl polyphenylene ether resin according to the present invention comprises the following steps: (1) using polyphenylene ether to react with a brominating agent to obtain brominated polyphenylene ether; (2) using brominated polyphenylene ether to react with an allyl compound to obtain an allyl polyphenylene ether resin; (3) using the allyl polyphenylene ether resin to react with mercaptosilane or hydrogen-containing silane to obtain a silylated polyphenylene ether resin.

[0026] In step (1), polyphenylene ether and tetrahydrofuran are dissolved in a mass ratio of 1:(3-5) by a solvent method, and after sufficient dissolution, polyphenylene ether, a brominating agent, and dibenzoyl peroxide are added in a molar ratio of 1:(20-30):(0.2-0.5) to react, and the reaction temperature is maintained at 70-80° C. The reaction is carried out under the protection of high-purity nitrogen for 2 hours, and then cooled to room temperature and washed with anhydrous methanol, and the precipitate is separated to obtain a precipitate, which is vacuum dried, washed and dried 3-4 times, and finally vacuum dried to obtain a solid brominated polyphenylene ether resin.

[0027] In step (2), the brominated polyphenylene ether prepared according to step (1) and tetrahydrofuran are dissolved in a mass ratio of 1:(3-5), and after sufficient dissolution, the brominated polyphenylene ether, the allyl compound and potassium carbonate are added in a molar ratio of 1:(10-20):(3-5) for reaction, the reaction temperature is maintained at 45-50°C, the reaction is carried out under the protection of high-purity nitrogen for 8 hours, and then cooled to room temperature, anhydrous methanol is added for washing, and the precipitate is separated to obtain a precipitate, which is vacuum dried, and the washing and drying are repeated 3-4 times, and finally vacuum dried to obtain a solid allyl polyphenylene ether resin (ALPPO).

[0028] In step (3), the allyl polyphenylene ether prepared according to step (2) and anhydrous tetrahydrofuran are dissolved in a mass ratio of 1: (3-6), and after sufficient dissolution, brominated polyphenylene ether, mercaptosilane, and photoinitiator are added in a molar ratio of 1: (5-15): (0.01-0.03), nitrogen protection is applied at room temperature, and the reaction is carried out under ultraviolet light for 1-1.5 hours. After the reaction is completed, vacuum drying is carried out at 70-90° C. for 2-5 hours to finally obtain a solid silanized polyphenylene ether resin (SLPPO).

[0029] In step (3), the allyl polyphenylene ether prepared according to step (2) and anhydrous tetrahydrofuran are dissolved in a mass ratio of 1: (3-6), and after being fully dissolved, the allyl polyphenylene ether and hydrogen-containing silane are reacted in a molar ratio of 1: (6-12), nitrogen protection is used, the reaction temperature is maintained at 75-85° C., 0.5% Wt of the total mass of the material in the system is added, and after reacting for 3-5 hours, 5% Wt of the total mass of the material is added. Activated carbon is added, stirred for 40 minutes, and the clear liquid is filtered to obtain a clear liquid, and vacuum dried at 70-90° C. for 2-5 hours to obtain a silanized polyphenylene ether resin (SLPPO).

[0030] In step (1), the brominating agent may be at least one of N-bromosuccinimide, N-bromo-o-sulfonylbenzene imide, 1,3-dibromo-5,5-dimethylhydantoin, 4-carbon tetrabromide, and 1,3,5-tribromo-1,3,5-triazine-2,4,6-trione. The brominating agent is preferably N-bromosuccinimide.

[0031] The allyl compound in step (2) is diallylamine.

[0032] In step (3), the mercaptosilane is at least one of 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropylmethyldiethoxysilane. The mercaptosilane is preferably 3-mercaptopropyltrimethoxysilane.

[0033] In step (3), the photoinitiator is at least one of (2,4,6-trimethylbenzoyl) diphenylphosphine oxide, 2-hydroxy-2-methyl-1-phenyl-1-propanone, and 1-hydroxycyclohexyl phenyl ketone. The photoinitiator is preferably (2,4,6-trimethylbenzoyl) diphenylphosphine oxide.

[0034] In step (3), the hydrogen-containing silane is at least one of trimethoxysilane and triethoxysilane.

[0035] In step (3), the catalyst is at least one of platinum, chloroplatinic acid, platinum on carbon, and platinum dioxide.

[0036] The allyl polyphenylene ether resin with a high allyl content prepared according to the above preparation method can be applied to the field of low dielectric materials.

[0037] The preparation method of the high temperature resistant low dielectric material according to the present invention comprises the following steps: fully dissolving the silylated polyphenylene ether resin prepared by the above preparation method and anhydrous tetrahydrofuran in a mass ratio of 1:(3-6), adding the silylated polyphenylene ether resin and a catalyst in a mass ratio of 1:(0.005-0.02) and mixing, curing at room temperature for 24 hours, and then curing at 180°C for 2 hours to obtain the high temperature resistant low dielectric material.

[0038] The catalyst is at least one of dibutyltin dilaurate, dimethyltin dilaurate, dioctyltin dilaurate, dibutyltin oxide, dibutyltin dibutyrate, dimethyltin dibutyrate, dioctyltin dibutyrate, dibutyltin diacetate, dimethyltin diacetate, dioctyltin diacetate, butyltin maleate, methyltin maleate, and octyltin maleate. The catalyst is preferably dibutyltin dilaurate.

[0039] The high temperature resistant and low dielectric packaging material prepared according to the above preparation method has excellent comprehensive properties.

[0040] The silanized polyphenylene ether resin and its preparation method, the high temperature resistant low dielectric packaging material and its preparation method of the present invention are specifically described below by examples. Main raw materials and equipment used: Unless otherwise specified, the raw materials and equipment of each embodiment and comparative example are the same; materials without specifying specific models or types are from the same common models purchased on the market, and no specific restrictions are made.

[0041] Example 1

[0042] (1) After fully dissolving 10 g of polyphenylene ether and 50 g of tetrahydrofuran in a 500 ml three-necked flask, 10 g of polyphenylene ether, 26 g of N-bromosuccinimide and 0.5 g of dibenzoyl peroxide were added to react. The reaction temperature was maintained at 70-80° C. The reaction was carried out under the protection of high-purity nitrogen for 2 h. After cooling to room temperature, anhydrous methanol was added for washing. The precipitate was separated and vacuum dried. The washing was repeated 3-4 times. Finally, the solid brominated polyphenylene ether resin was obtained by vacuum drying.

[0043] (2) After fully dissolving 10 g of brominated polyphenylene ether and 50 g of tetrahydrofuran in a 500 ml three-necked flask, 10 g of brominated polyphenylene ether, 7 g of diallylamine and 2.4 g of potassium carbonate were added to react. The reaction temperature was maintained at 45-50° C. The reaction was carried out under the protection of high-purity nitrogen for 8 hours. After cooling to room temperature, anhydrous methanol was added for washing. The precipitate was separated and vacuum dried. The washing was repeated 3-4 times. Finally, the solid allyl polyphenylene ether resin (ALPPO) was obtained by vacuum drying.

[0044] (3) Add 2.6g of allyl polyphenylene ether resin to a 50ml three-necked flask, and then add 10g of anhydrous tetrahydrofuran to fully dissolve. Then add 2.6g of allyl polyphenylene ether, 3.2g of 3-mercaptopropyltrimethoxysilane, and 0.02g of (2,4,6-trimethylbenzoyl)diphenylphosphine oxide to react at room temperature under ultraviolet light and under the protection of high-purity nitrogen for 1 hour. After the reaction is completed, vacuum dry to obtain silanized polyphenylene ether resin (SLPPO). The molecular structure of the reaction product is shown in Figure 1 , where m≥0, n≥0, x≥0, y≥0, the infrared image of the product is shown in Figure 2 .

[0045] (4) Add 2.2 g of silanized polyphenylene ether to a 100 ml beaker, add 8 g of tetrahydrofuran to fully dissolve, then add 0.04 g of dibutyltin dilaurate, mix well, cure at room temperature for 24 hours, and then cure at 180° C. for 2 hours to obtain the high temperature resistant low dielectric material.

[0046] The material obtained by the above method was analyzed by dynamic mechanical analyzer (DMA) 3 The glass transition temperature was 245°C. Figure 3 As shown; the decomposition temperature of 5% weight loss through the TG side is 338°C, and the results are as follows Figure 4 As shown; Agilent 4294A instrument, for 10*10*1mm 3 The dielectric properties of the sample were tested. The dielectric constant of the material was 2.77 at 1MHz. The results are as follows Figure 5 As shown, it has high temperature resistance and low dielectric properties.

[0047] in, Figure 1 It is the molecular structure of silylated polyphenylene ether resin.

[0048] Figure 2 Medium 3070cm -1 The characteristic peak of CH stretching vibration of allylic unsaturated bond is near 2940cm -1 The characteristic peak of methyl group is near 2850cm -1 The characteristic peak of methylene is at 1640cm -1 The C=C characteristic peak is near 1090cm -1 The Si-O characteristic peak is near 820cm -1 The peak near is the characteristic peak of Si-C stretching vibration.

[0049] Figure 6 This is the TMA test result of the material, and its linear expansion coefficient is 83.5ppm / ℃.

[0050] It can be seen from the above test results that the high temperature resistant and low dielectric material prepared in Example 1 has excellent comprehensive performance.

[0051] Example 2

[0052] Except that 1.23 g of allyl polyphenylene ether and 5.2 g of anhydrous tetrahydrofuran were added in step (3), 1.23 g of allyl polyphenylene ether, 1.03 g of 3-mercaptopropyltrimethoxysilane, and 0.024 g of (2,4,6-trimethylbenzoyl)diphenylphosphine oxide were added for reaction, and except that 1.2 g of silylated polyphenylene ether, 5.5 g of tetrahydrofuran, and 0.016 g of dibutyltin dilaurate were added in step (4), the other steps were the same as in Example 1.

[0053] The material obtained by the above method was tested for dielectric properties, and the dielectric constant of the material at 25°C and 1MHz was 2.83, the glass transition temperature was 238°C, and the initial decomposition temperature of 5% weight loss was 334°C. The material has good temperature resistance and low dielectric properties.

[0054] Example 3

[0055] Except that 1.29 g of allyl polyphenylene ether and 6.2 g of anhydrous tetrahydrofuran were added in step (3), 1.29 g of allyl polyphenylene ether, 0.82 g of 3-mercaptopropyltrimethoxysilane, and 0.026 g of (2,4,6-trimethylbenzoyl)diphenylphosphine oxide were added for reaction, and except that 1.2 g of silylated polyphenylene ether, 5.8 g of tetrahydrofuran, and 0.015 g of dibutyltin dilaurate were added in step (4), the other steps were the same as in Example 1.

[0056] The material obtained by the above method was tested for dielectric properties, and the dielectric constant of the material at 25°C and 1MHz was 2.89, the glass transition temperature was 232°C, and the initial decomposition temperature of 5% weight loss was 332°C. The material had good flexibility and low dielectric properties.

[0057] Example 4

[0058] (1) 5.02 g of allyl polyphenylene ether obtained by steps (1) and (2) in Example 1 was weighed into a 50 ml four-necked bottle, 20.11 g of anhydrous tetrahydrofuran was added to fully dissolve the mixture, 3.06 g of trimethoxysilane and 0.04 g of platinum were added, the mixture was protected by nitrogen, and the reaction was carried out at 80° C. for 4 h. 0.403 g of activated carbon was added, the mixture was stirred for 40 min, and the clear liquid was filtered out. The clear liquid was dried in vacuo at 80° C. to obtain a silanized polyphenylene ether resin (SLPPO).

[0059] (2) Add 4.1 g of silanized polyphenylene ether to a 50 ml beaker, add 18.9 g of tetrahydrofuran to fully dissolve, then add 0.02 g of dibutyltin dilaurate, mix well, cure at room temperature for 24 hours, and then cure at 180° C. for 2 hours to obtain the high temperature resistant low dielectric material.

[0060] The material obtained by the above method was tested for dielectric properties, and the dielectric constant of the material at 25°C and 1MHz was 2.76, the glass transition temperature was 237°C, and the initial decomposition temperature of 5% weight loss was 330°C. The material had good flexibility and low dielectric properties.

Claims

1. A method for preparing a silylated polyphenylene ether resin, characterized in that: The following steps are involved: (1) using polyphenylene ether to react with a brominating agent to obtain brominated polyphenylene ether; (2) using brominated polyphenylene ether to react with an allyl compound to obtain an allyl polyphenylene ether resin; (3) Allyl polyphenylene ether resin is reacted with mercaptosilane or hydrogen-containing silane to obtain silylated polyphenylene ether resin.

2. The method for preparing a silylated polyphenylene ether resin according to claim 1, characterized in that: In step (1), the brominating agent is at least one of N-bromosuccinimide, N-bromo-o-sulfonylbenzene imide, 1,3-dibromo-5,5-dimethylhydantoin, 4-carbon tetrabromide, and 1,3,5-tribromo-1,3,5-triazine-2,4,6-trione.

3. The method for preparing a silylated polyphenylene ether resin according to claim 2, characterized in that: In step (2), the brominating agent in step (1) is N-bromosuccinimide.

4. The method for preparing a silylated polyphenylene ether resin according to claim 1, characterized in that: The allyl compound in step (2) is diallylamine.

5. The method for preparing silylated allyl polyphenylene ether resin according to claim 1, characterized in that: The mercaptosilane is at least one of 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropylmethyldiethoxysilane.

6. The method for preparing silylated allyl polyphenylene ether resin according to claim 5, characterized in that: The mercaptosilane is 3-mercaptopropyltrimethoxysilane.

7. The method for preparing silylated allyl polyphenylene ether resin according to claim 1, characterized in that: The hydrogen-containing silane is at least one of trimethoxysilane and triethoxysilane.

8. The silane-containing polyphenylene ether resin obtained according to the preparation method according to any one of claims 1 to 7 is a silylated polyphenylene ether resin.

9. A method for preparing a high temperature resistant low dielectric material, characterized in that: After the silylated polyphenylene ether resin in claim 8 and tetrahydrofuran are fully dissolved in a mass ratio of 1:(3-6), the silylated polyphenylene ether resin and the catalyst are added in a mass ratio of 1:(0.005-0.02) and mixed, and after curing at room temperature for 24 hours, cured at 180°C for 2 hours to obtain the high temperature resistant low dielectric material.

10. The method for preparing a high temperature resistant low dielectric material according to claim 9, characterized in that: The catalyst is at least one of dibutyltin dilaurate, dimethyltin dilaurate, dioctyltin dilaurate, dibutyltin oxide, dibutyltin dibutyrate, dimethyltin dibutyrate, dioctyltin dibutyrate, dibutyltin diacetate, dimethyltin diacetate, dioctyltin diacetate, butyltin maleate, methyltin maleate, and octyltin maleate.

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