Semiconductor reaction chamber and method of using the same

Abstract

The present invention provides a semiconductor reaction chamber and a method for using the same, wherein the reaction chamber includes a chamber body, an air inlet flange, and a support member; the chamber body includes a chamber body and a first chamber flange fixed to a first side of the chamber body, the first chamber flange having a first transfer port and a second transfer port, both of which are configured to allow a substrate to pass therethrough; the air inlet flange is located on a side of the first chamber flange away from the chamber body and is configured as a first air inlet flange or a second air inlet flange, the film transfer port of the first air inlet flange is connected to the first transfer port, and the film transfer port of the second air inlet flange is connected to the second transfer port; the support member is partially located in the chamber body and is used to support the substrate. In the present invention, the first chamber flange of the chamber body has a first transfer port and a second transfer port, and the chamber can be adapted to different air inlet flanges, so that the semiconductor reaction chamber is compatible with two substrate entry methods, thereby increasing the application scenarios of the semiconductor reaction chamber.

Description

Technical Field

[0001] The present invention mainly relates to the field of semiconductor preparation technology, and in particular to a semiconductor reaction chamber and a method of using the same. Background Art

[0002] With the continuous development of semiconductor technology and the expansion of its application areas, semiconductor manufacturing equipment is also constantly being upgraded to meet the manufacturing needs of higher precision, higher efficiency, and lower costs. Semiconductor reaction chambers are one of the indispensable equipment in the semiconductor manufacturing process. They are mainly used for reactions such as material deposition and etching. They are one of the most important components in the semiconductor industry and play a vital role in the manufacture of semiconductor devices.

[0003] In the related art, semiconductor reaction chambers all adopt a single cavity entry method, that is, there is only one substrate cavity transfer port, which is difficult to adapt to more production needs and has limited application scenarios. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a semiconductor reaction chamber and a method of using the same. By providing a chamber with a first transfer port and a second transfer port and adapting different air inlet flanges to the chamber, the semiconductor reaction chamber can be compatible with two substrate entry methods, thereby increasing the application scenarios of the semiconductor reaction chamber.

[0005] To solve the above technical problems, in a first aspect, the present invention provides a semiconductor reaction chamber, comprising: a chamber body, wherein the chamber body comprises a chamber body and a first chamber flange fixed to a first side of the chamber body, the first chamber flange having a first transfer port and a second transfer port, the first transfer port and the second transfer port being configured to allow a substrate to pass therethrough, and the first transfer port being positioned higher than the second transfer port; an air inlet flange, wherein the air inlet flange is located on a side of the first chamber flange away from the chamber body, the air inlet flange being configured as a first air inlet flange or a second air inlet flange, the film transfer port of the first air inlet flange being connected to the first transfer port, and the film transfer port of the second air inlet flange being connected to the second transfer port; and a support member, wherein a portion of the support member is located in the chamber body, and the support member is used to support the substrate.

[0006] Optionally, the cavity further includes a second chamber flange fixed to the second side of the cavity body, and the second chamber flange has an air outlet.

[0007] Optionally, it further includes an air inlet channel extending in the air inlet flange, wherein the first end of the air inlet channel is an air inlet end for connecting to an upstream gas passage, and the second end of the air inlet channel is an air outlet end for providing the substrate with gas required for thin film deposition.

[0008] Optionally, in the first type of air inlet flange, the air inlet channel is a first vertical channel that runs through the entity between the upper surface of the air inlet flange and the film transmission port.

[0009] Optionally, in the second type of air inlet flange, the air inlet channel includes a second vertical channel and a transverse channel passing through the air inlet flange, wherein the first end of the second vertical channel passes through the upper surface of the air inlet flange, the second end of the second vertical channel is connected to the first end of the transverse channel, and the second end of the transverse channel is exposed to the first transmission port.

[0010] Optionally, the support member includes a tray bracket, a substrate tray, an ejector pin and an ejector pin bracket; the substrate tray is arranged on the tray bracket; the ejector pin is movably arranged on the substrate tray, and when the ejector pin is supported by the substrate tray, the upper surface of the ejector pin is flush with the upper surface of the substrate tray or is located below the upper surface of the substrate tray; the top end of the ejector pin bracket has an ejector pin holder, and the ejector pin holder is used to support the ejector pin; the ejector pin bracket is coaxially arranged with the tray bracket.

[0011] Optionally, the tray support includes a support shaft and a plurality of support arms; one end of the plurality of support arms is fixed to the support shaft, and the other end of the plurality of support arms is fixed to the substrate tray.

[0012] Optionally, a projected length of the support arm on the substrate tray is smaller than a distance from the ejector pin to the support shaft.

[0013] Optionally, a stopper is further provided in the cavity body, and the stopper is configured to adjust the height of the upper surface of the ejector pin; each of the stoppers is located below the corresponding ejector pin.

[0014] Optionally, the lower wall of the cavity body has a groove, which is recessed downward from the upper surface of the lower wall. The stopper includes a lower mounting portion and an upper supporting portion. The lower surface of the mounting portion of the stopper abuts against the bottom of the groove, and the supporting portion of the stopper is used to support the ejector pin.

[0015] Optionally, when the lower surface of the mounting portion of the stopper is in a state of abutting against the groove, there is a gap between the lower surface of the supporting portion of the stopper and the lower wall.

[0016] In a second aspect, the present invention provides a method for using a semiconductor reaction chamber, using the semiconductor reaction chamber as described in the first aspect, comprising: selecting the first air inlet flange; the robot is configured to transfer the substrate into the semiconductor reaction chamber from the film transfer port of the first air inlet flange and the first transfer port of the cavity; the ejector pin holder rises to support the substrate on the upper surface of the ejector pin; the robot withdraws from the semiconductor reaction chamber; the ejector pin holder descends to allow the substrate to fall onto the substrate tray.

[0017] In a third aspect, the present invention provides a method for using a semiconductor reaction chamber, using the semiconductor reaction chamber as described in the first aspect, including: selecting the second air inlet flange; rotating the ejector pin holder so that the ejector pin holder is staggered with the ejector pin; the robot is configured to transfer the substrate into the semiconductor reaction chamber from the second transfer port of the semiconductor reaction chamber and drop the substrate onto the upper surface of the ejector pin; the robot exits the semiconductor reaction chamber; the tray holder drives the substrate tray to rise to a process position, and the process position is the position where the substrate undergoes thin film deposition.

[0018] Compared with the prior art, the present invention has the following advantages: the first chamber flange of the cavity has a first transfer port and a second transfer port, and the first transfer port and the second transfer port are both configured to allow the substrate to pass therethrough, thereby enabling the semiconductor reaction chamber to be compatible with two substrate entry methods, which is more flexible and increases the application scenarios of the semiconductor reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are included to provide a further understanding of the present application. They are incorporated into and constitute a part of this application. The accompanying drawings illustrate embodiments of the present application and, together with this specification, serve to explain the principles of the present application. In the accompanying drawings:

[0020] Figure 1 This is a schematic structural diagram of a semiconductor reaction chamber in one embodiment of the present invention under a usage condition;

[0021] Figure 2 yes Figure 1 Schematic diagram of a semiconductor reaction chamber during deposition;

[0022] Figure 3 1 is a schematic structural diagram of a semiconductor reaction chamber according to an embodiment of the present invention under another usage condition;

[0023] Figure 4 yes Figure 3 Schematic diagram of a semiconductor reaction chamber during deposition;

[0024] Figure 5This is a top view of the positional relationship between the tray support and the ejector support in one embodiment of the present invention;

[0025] Figure 6 is a top view of another positional relationship between the tray support and the ejector support in one embodiment of the present invention;

[0026] Figure 7 1 is a flow chart of a method for using a semiconductor reaction chamber according to an embodiment of the present invention;

[0027] Figure 8 1 is a flow chart of another method of using a semiconductor reaction chamber according to an embodiment of the present invention;

[0028] Figure 9 The figure is a flow chart of another method for using a semiconductor reaction chamber according to an embodiment of the present invention.

[0029] It should be noted that Figure 3 and Figure 4 The ejector bracket is not shown in the figure to better illustrate the essential content of the present invention.

[0030] The numbers in the figure are:

[0031] 100-cavity;

[0032] 110- chamber body, 120- first chamber flange, 130- second chamber flange;

[0033] 111 - groove, 121 - first transmission port, 122 - second transmission port, 131 - air outlet;

[0034] 200-inlet flange;

[0035] 210-first type of air inlet flange, 220-second type of air inlet flange;

[0036] 201-first vertical channel, 202-second vertical channel, 203-horizontal channel;

[0037] 300-support member;

[0038] 310-tray bracket, 320-substrate tray, 330-throw pin, 340-throw pin bracket;

[0039] 311-support shaft, 312-support arm;

[0040] 400-stopper;

[0041] 500- rear heating plate;

[0042] 600-substrate. DETAILED DESCRIPTION

[0043] To more clearly illustrate the technical solutions of the embodiments of this application, the following is a brief introduction to the drawings required for describing the embodiments. Obviously, the drawings described below are merely examples or embodiments of this application. Those skilled in the art can apply this application to other similar scenarios based on these drawings without inventive effort. Unless otherwise apparent from the context or otherwise noted, the same reference numerals in the figures represent the same structure or operation.

[0044] In the description of this application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of this application; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0045] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0046] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is solely for the purpose of distinguishing the corresponding components. Unless otherwise stated, these terms have no special meaning and therefore should not be construed as limiting the scope of protection of this application. Furthermore, while the terms used in this application are selected from commonly known and commonly used terms, some terms mentioned in this specification may have been selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant sections of this description. Furthermore, this application should be understood not only by the actual terms used, but also by the meaning implied by each term.

[0047] Flowcharts are used throughout this application to illustrate operations performed by a semiconductor reaction chamber according to embodiments of the present application. It should be understood that the preceding or following operations do not necessarily need to be performed in exact order. Instead, various steps may be performed in reverse order or simultaneously. Furthermore, other operations may be added to these processes, or one or more operations may be removed from these processes.

[0048] An embodiment of the present invention provides a semiconductor reaction chamber, referring to Figures 1 to 4 As shown, it mainly includes a cavity 100, an air inlet flange 200 and a support member 300, wherein,

[0049] The chamber 100 includes a chamber body 110 and a first chamber flange 120 fixed to a first side of the chamber body 110. The first chamber flange 120 has a first transfer port 121 and a second transfer port 122. The first transfer port 121 and the second transfer port 122 are both configured to allow the substrate 600 to pass therethrough. The first transfer port 121 is positioned higher than the second transfer port 122. The inlet flange 200 is located on a side of the first chamber flange 120 away from the chamber body 110. The inlet flange 200 is configured as a first inlet flange 210 or a second inlet flange 220. When configured as the first inlet flange 210, reference is made to Figure 1 and Figure 2 As shown, Figure 2 Where P1, P2 and P3 represent process gas, purge gas and exhaust gas respectively. The transmission port of the first inlet flange 210 is connected to the first transmission port 121. When the second inlet flange 220 is configured, refer to Figure 3 and Figure 4 As shown, Figure 4 P1, P2 and P3 represent process gas, purge gas and exhaust gas respectively. The wafer transfer port of the second inlet flange 220 is connected to the second transfer port 122. The support member 300 is partially located in the chamber body 110 and is used to support the substrate 600 (such as a wafer).

[0050] In this embodiment, the first chamber flange 120 has a first transfer port 121 and a second transfer port 122, and the first transfer port 121 is located higher than the second transfer port 122. The transfer ports are distinguished only by their positions on the first chamber flange 120. The first transfer port 121 can also be called the upper chamber transfer port, and the corresponding substrate 600 transfer method is upper chamber transfer. The second transfer port 122 is the lower chamber transfer port, and the corresponding substrate 600 transfer method is lower chamber transfer. Both transfer ports can transfer substrates 600.

[0051] In this embodiment, the substrate 600 can enter the cavity 100 from the first transfer port 121 or from the second transfer port 122. The upper cavity transfer can take into account the conventional transfer method. The lower cavity transfer does not need to be at the process position (such as Figure 2 or Figure 4 (As shown at position A), there is enough space for substrate 600 to fall back. The distance between the upper surface of substrate 600 and the inner surface of the upper wall of chamber 100 is relatively small. This structural advantage is that it can reduce the Reynolds number of the gas flow field, making the gas flow field more stable and easier to control. In other words, the semiconductor manufacturing process is more controllable and flexible. In addition, the lower chamber transfer also reduces the consumption of precursors, which has a positive effect on cost control in the production process.

[0052] In one example, the chamber 100 further includes a second chamber flange 130 fixed to the second side of the chamber body 110 , and the second chamber flange 130 has an air outlet 131 .

[0053] refer to Figure 2 or Figure 4 As shown, during thin film deposition on a substrate 600, process gas P1 enters from one side of the chamber 100 (the left side in the figure) and is deposited on the upper surface of the substrate 600. The post-deposition gas (exhaust gas) P3 needs to be discharged promptly. Therefore, a gas outlet 131 is provided on the second chamber flange 130 on the other side of the chamber 100 (the right side in the figure) to facilitate the timely discharge of the post-deposition gas P3. A post-heating plate 500 can be provided within the chamber body 110 near the gas outlet 131. During deposition, the post-heating plate 500 can discharge the post-deposition gas out of the chamber.

[0054] In one example, the semiconductor reaction chamber of this embodiment further includes an inlet channel extending within the inlet flange 200. The first end of the inlet channel is an inlet end, which is used to connect to the upstream gas passage, and the second end of the inlet channel is an outlet end, which is used to provide the gas required for thin film deposition to the substrate 600. Furthermore, in the first type of inlet flange 210, the inlet channel is a first vertical channel 201 that extends through the upper surface of the inlet flange 200 and the film transfer port. In the second type of inlet flange 220, the inlet channel includes a second vertical channel 202 and a transverse channel 203 that pass through the inlet flange 200. The first end of the second vertical channel 202 extends through the upper surface of the inlet flange 200, the second end of the second vertical channel 202 connects to the first end of the transverse channel 203, and the second end of the transverse channel 203 is exposed to the first transfer port 121.

[0055] refer to Figure 1 and Figure 2As shown, the situation where only the first vertical channel 201 is used is often in a scenario where the chamber 100 is matched with the first air inlet flange 210, and the film transfer port of the first air inlet flange 210 is connected to the first transfer port 121. The process gas P1 enters the first vertical channel 201 from the upper end of the first vertical channel 201 (shown at a in the figure), and then flows out through the lower end of the first vertical channel 201 (shown at b in the figure). After that, the process gas P1 flows into the film transfer port of the first air inlet flange 210 and then flows to the substrate 600 on which the thin film is to be deposited.

[0056] refer to Figure 3 and Figure 4 As shown, when the chamber 100 is matched with the second gas inlet flange 220, the film transfer port of the gas inlet flange 200 is connected to the second transfer port 122 of the first chamber flange 120, while the first transfer port 121 located above the second transfer port 122 does not correspond to the film transfer port. In this case, the gas inlet channel includes a second vertical channel 202, from which the process gas P1 is introduced at its inlet end (shown at a). It also includes a transverse channel 203. One end of the transverse channel 203 is connected to the gas outlet end (shown at b) of the second vertical channel 202, and the other end of the transverse channel 203 (shown at c) passes through the second gas inlet flange 220 to input the process gas P1 into the chamber 100. At the same time, since the process gas P1 flows out horizontally after entering the chamber 100, the flow is smooth, which is also beneficial to the thin film deposition process on the substrate 600.

[0057] In one example, the support member 300 includes a tray support 310, a substrate tray 320, an ejector pin 330, and an ejector pin support 340. The substrate tray 320 is mounted on the tray support 310. For example, a groove is provided on the bottom surface of the substrate tray 320, and a positioning pin is provided on the tray support 310. When the positioning pin is inserted into the groove, the tray support 310 can drive the substrate tray 320 to rotate. The ejector pin 330 is movably mounted on the substrate tray 320. When the ejector pin 330 is supported by the substrate tray 320, the upper surface of the ejector pin 330 is flush with or below the upper surface of the substrate tray 320. The ejector pin support 340 has an ejector support at its top end for supporting the ejector pin 330. The ejector pin support 340 is coaxially arranged with the tray support 310.

[0058] The support member 300 is crucial to ensure the smooth progress of the thin film deposition process. Figure 1 As shown, in the upper chamber transfer mode, when the ejector pins 330 are lifted by the ejector pin support 340, the upper surface of the ejector pins 330 is higher than the upper surface of the substrate tray 320. At this time, the substrate 600 is supported by the ejector pins 330 whose upper surface is higher than the substrate tray 320. Figure 2As shown, when the ejector pin holder 340 is lowered, it no longer provides support for the ejector pins 330. Since the upper ends of the ejector pins 330 are wider, the ejector pins 330 will not fall off the substrate tray 320. After the ejector pins 330 are lowered, they will remain suspended from the substrate tray 320. In this case, since the upper surfaces of the ejector pins 330 are flush with or located below the upper surface of the substrate tray 320, the substrate tray 320 can support the substrate 600.

[0059] refer to Figure 3 As shown, in the lower chamber transfer mode, the ejector pin 330 is not supported by the ejector bracket 340. One implementation method is to stagger the ejector bracket 340 relative to the ejector pin 330 at a certain angle, or to directly use the support member 300 without the ejector bracket 340, such as removing the ejector bracket 340. In this setting, when the substrate 600 is transferred into the semiconductor reaction chamber, the lower end of the ejector pin 330 abuts against the inner surface of the lower wall of the chamber body 110, and the upper surface of the ejector pin 330 is higher than the upper surface of the substrate tray 320. After the substrate 600 is transferred into the semiconductor reaction chamber, the substrate 600 is supported by the ejector pin 330 whose upper surface is higher than the substrate tray 320. Figure 4 As shown, the tray support 310 rises, driving the substrate tray 320 upward. When the substrate tray 320 rises to a certain height, the substrate tray 320 provides support for the ejector pins 330 (i.e., the ejector pins 330 are suspended from the substrate tray 320). At this point, because the upper surface of the ejector pins 330 is flush with or below the upper surface of the substrate tray 320, the substrate tray 320 supports the substrate 600. When the tray support 310 continues to rise, driving the substrate 600 to the process position, the thin film deposition process begins.

[0060] To further illustrate the difference in the use of the support member 300 during upper and lower cavity transmission, the following details are provided:

[0061] refer to Figure 5 As shown, in the upper cavity transmission mode, the ejector pin support 340 is required to support the ejector pin 330. Figure 6 As shown, in the lower chamber transfer mode, the ejector brackets 340 are staggered by a certain angle α. For example, if the staggered angle α is 0° when the ejector brackets 340 and the tray bracket 310 overlap, when either the ejector bracket 340 or the tray bracket 310 rotates 60° while the other bracket remains stationary, the ejector brackets 340 will be staggered away from the ejector pins 330. Of course, in one embodiment, the support member 300 can also be used directly without the ejector brackets 340.

[0062] In one example, reference Figure 1As shown, the tray support 310 includes a support shaft 311 and a plurality of support arms 312 . One end of the plurality of support arms 312 is fixed to the support shaft 311 , and the other end of the plurality of support arms 312 is connected to the substrate tray 320 .

[0063] In one example, the projected length of the support arm 312 on the substrate tray 320 is smaller than the distance between the ejector pin 330 and the support shaft 311 .

[0064] refer to Figure 5 As shown, the projected length of the support arm 312 on the substrate tray 320 is shown as the length L1, and the distance from the ejector pin 330 to the support shaft 311 is shown as the length L2. Since L1 is smaller than L2, from the overall structure, the tray bracket 310 is located inside the multiple ejector pins 330, which is beneficial to the support of the substrate tray 320 to the substrate 600 and the rotation of the support member 300 during the thin film deposition process.

[0065] In one example, a stopper 400 is further disposed within the chamber body 110. The stopper 400 is configured to adjust the height of the upper surface of the ejector pins 330. Each stopper 400 is located below its corresponding ejector pin 330. Because the tray support 310 is located within the ejector pin support 340, when the support arm 312 is in the lower position, the stopper 400 and the support arm 312 do not interfere with each other. This does not affect the lower chamber height of the semiconductor reaction chamber, allowing for further reduction in the lower chamber height.

[0066] In this embodiment, the function of the stopper 400 is to support the ejector pins 330 when the substrate tray 320 is lowered and the ejector pins 330 catch the substrate 600. The lower end of the ejector pins 330 contacts the stopper 400, and the upper surface of the ejector pins 330 contacts the substrate 600. The upper surfaces of the three ejector pins 330 on the substrate tray 320 form a contact surface. If the upper surfaces of the three ejector pins 330 are at different heights, the substrate 600 will tilt. In the case of excessive tilt, the substrate 600 will overturn under the action of gravity and friction, causing the substrate 600 to be trapped in the semiconductor reaction chamber and unable to be removed or even to break. In the case of a small tilt angle, when the substrate 600 approaches the upper surface of the substrate tray 320, the residual gas in the lower part of the substrate 600 is discharged unevenly along the four sides, causing the substrate 600 to slide away from the center position.

[0067] In order to ensure that the substrate 600 has a good levelness when being received by the ejector pins 330, the thickness of the stopper 400 is made into different sizes, and there is a slight difference in thickness between each type of stopper 400. Using stoppers 400 of different thicknesses can adjust the coplanarity of the upper surfaces of multiple ejector pins, and thus the ejector pins 330 can be made to have a consistent height when receiving or supporting the substrate 600, thereby ensuring that the substrate 600 does not tilt.

[0068] refer to Figure 3 As shown, in the lower chamber transmission mode, when the ejector pin holder 340 does not exist or is not considered, the stopper 400 can directly cooperate with the ejector pin 330 to adjust the upper surface height of the ejector pin 330 so that the ejector pin 330 has a consistent height when receiving or supporting the substrate 600.

[0069] In one example, the lower wall of the cavity body 110 has a groove 111, which is recessed downward from the upper surface of the lower wall. Groove 111 is provided on the flat lower wall, and the processing involves only cold working, not hot working. This prevents deformation of the cavity caused by hot working. The stopper 400 includes a lower mounting portion and an upper support portion. The lower surface of the mounting portion of the stopper 400 abuts the bottom of the groove 111, and the support portion of the stopper 400 is used to support the ejector pin 330.

[0070] In this embodiment, a groove 111 is provided on the inner surface of the lower wall of the cavity body 110. A stopper 400 is positioned within the groove 111. The stopper 400 vertically cooperates with the ejector pin 330. Stoppers 400 of different specifications (i.e., different thicknesses) can be used to level the ejector pin 330. The mounting portion of the stopper 400 extends into the groove 111, supporting the stopper 400 within the cavity body 110. The mounting portion below the stopper 400 must be approximately equal to or slightly greater than the depth of the groove 111 to ensure that the lower surface of the mounting portion of the stopper 400 can smoothly contact the bottom of the groove 111, enhancing the stability of the stopper 400 and, in turn, ensuring greater stability for the ejector pin 330 when supporting the substrate 600.

[0071] In one example, when the lower surface of the mounting portion of the stopper 400 is in a state of abutting the groove 111, there is a gap between the lower surface of the support portion of the stopper 400 and the inner surface of the lower wall. The cross-sectional area of ​​the mounting portion of the stopper 400 is smaller than the cross-sectional area of ​​the support portion of the stopper 400. The mounting portion of the stopper 400 abuts the groove 111, while the support portion of the stopper 400 does not contact the inner surface of the lower wall, which reduces the parts that require precision machining. In addition, during the installation and removal process of the stopper 400, the gap can provide a better operating space for the installation and removal tools, which is conducive to the smooth installation and removal of the stopper 400. In addition, illustratively, the height of the gap is 2mm to 5mm.

[0072] In the semiconductor reaction chamber provided in this embodiment, the first chamber flange 120 of the chamber body 100 has a first transfer port 121 and a second transfer port 122. The first transfer port 121 and the second transfer port 122 are both configured to allow the substrate 600 to pass therethrough, thereby enabling the semiconductor reaction chamber to be compatible with two substrate entry methods, thereby increasing the application scenarios of the semiconductor reaction chamber.

[0073] One embodiment of the present invention provides a method for using a semiconductor reaction chamber, which can be applied to the semiconductor reaction chamber shown in the above embodiment. Figure 7 As shown, the method 700 includes:

[0074] S710, select the first air inlet flange 210; S720, the robot is configured to transfer the substrate 600 into the semiconductor reaction chamber from the film transfer port of the first air inlet flange 210 and the first transfer port 121 of the cavity 100; S730, the ejector bracket 340 rises to support the substrate 600 on the upper surface of the ejector 330; S740, the robot exits the semiconductor reaction chamber; S750, the ejector bracket 340 descends to allow the substrate 600 to fall on the substrate tray 320.

[0075] For the case of selecting the first type of air inlet flange 210, there is another way to use it, refer to Figure 8 As shown, the method 800 includes: S810, selecting the first air inlet flange 210; S820, the robot is configured to transfer the substrate 600 into the semiconductor reaction chamber from the film transfer port of the first air inlet flange 210 and the first transfer port 121 of the cavity 100, and drop the substrate 600 onto the upper surface of the ejector pin 330 (the ejector pin 330 has risen to a certain height with the ejector pin support 340); S830, the robot exits the semiconductor reaction chamber; S840, the ejector pin support 340 descends, so that the substrate 600 falls on the substrate tray 320.

[0076] In this embodiment, reference Figure 2 As shown, the process position (position A) is the position for thin film deposition. When the substrate 600 is transferred from the upper chamber, the substrate 600 is transferred into the semiconductor reaction chamber through the first transfer port 121. After entering the semiconductor reaction chamber, the substrate 600 can be dropped onto the upper surface of the ejector pins 330 by a robot, or the ejector pins 330 can actively support the substrate 600.

[0077] One embodiment of the present invention provides another method for using a semiconductor reaction chamber, which can be applied to the semiconductor reaction chamber shown in the above embodiment. Figure 9 As shown, method 900 includes:

[0078] S910, select the second air inlet flange 220; S920, rotate the ejector bracket 340 so that the ejector bracket 340 is staggered with the ejector pin 330; S930, the robot is configured to transfer the substrate 600 into the semiconductor reaction chamber from the second transfer port 122 of the semiconductor reaction chamber, and drop the substrate 600 onto the upper surface of the ejector pin 330; S940, the robot exits the semiconductor reaction chamber; S950, the tray bracket 310 drives the substrate tray 320 to rise to the process position, which is the position where the substrate 600 undergoes thin film deposition.

[0079] In this embodiment, reference Figure 4 As shown, the process position (position A) is the location for thin film deposition. When the substrate 600 is transferred from the lower chamber, the substrate 600 is transferred into the semiconductor reaction chamber through the second transfer port 122. Since the ejector pins 330 cannot actively support the substrate 600, a robot is required to drop the substrate 600 onto the upper surface of the ejector pins 330.

[0080] The method for using the semiconductor reaction chamber provided in this embodiment can be applied to the aforementioned semiconductor reaction chamber. The first chamber flange 120 of the chamber body 100 has a first transfer port 121 and a second transfer port 122. The first transfer port 121 and the second transfer port 122 are both configured to allow the substrate 600 to pass therethrough, thereby enabling upper chamber transfer and lower chamber transfer. The semiconductor reaction chamber is compatible with both substrate entry methods, thereby increasing the application scenarios of the semiconductor reaction chamber.

[0081] The basic concepts have been described above. It will be apparent to those skilled in the art that the above disclosures are merely illustrative and do not constitute limitations on this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and amendments to this application. Such modifications, improvements, and amendments are suggested in this application and remain within the spirit and scope of the exemplary embodiments of this application.

[0082] It should be noted that, in order to simplify the presentation of this disclosure and thus facilitate understanding of one or more embodiments of the invention, the foregoing descriptions of the embodiments of this application sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the subject matter of this application requires more features than those recited in the claims. In fact, an embodiment may have fewer features than all of the features of a single embodiment disclosed above.

[0083] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions can be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present application, they will fall within the scope of the claims of the present application.

Claims

1. A semiconductor reaction chamber, characterized in that: include: a chamber body, the chamber comprising a chamber body and a first chamber flange fixed to a first side of the chamber body, the first chamber flange having a first transfer port and a second transfer port, the first transfer port and the second transfer port both being configured to allow a substrate to pass therethrough, the first transfer port being positioned higher than the second transfer port; an air inlet flange, the air inlet flange being located on a side of the first chamber flange away from the chamber body, the air inlet flange being configured as a first air inlet flange or a second air inlet flange, the film transmission port of the first air inlet flange being in communication with the first transmission port, and the film transmission port of the second air inlet flange being in communication with the second transmission port; and The support member is partially located in the cavity body and is used to carry the substrate; the support member includes a tray bracket, a substrate tray, an ejector pin and an ejector pin bracket; the substrate tray is arranged on the tray bracket; the ejector pin is movably arranged on the substrate tray, and when the ejector pin is supported by the substrate tray, the upper surface of the ejector pin is flush with the upper surface of the substrate tray or is located below the upper surface of the substrate tray; the top of the ejector pin bracket has an ejector pin holder, which is used to support the ejector pin, or the ejector pin bracket is staggered relative to the ejector pin so that the ejector pin bracket does not support the ejector pin; the ejector pin bracket is coaxially arranged with the tray bracket; a stopper is further provided in the cavity body, and the stopper is configured to adjust the height of the upper surface of the ejector pin; each stopper is located below its corresponding ejector pin, and the stopper is configured to include a plurality of thicknesses.

2. The semiconductor reaction chamber according to claim 1, wherein: The cavity further includes a second cavity flange fixed to the second side of the cavity body, and the second cavity flange is provided with an air outlet.

3. The semiconductor reaction chamber according to claim 1, wherein: It also includes an air inlet channel extending in the air inlet flange, wherein the first end of the air inlet channel is an air inlet end for connecting to an upstream gas passage, and the second end of the air inlet channel is an air outlet end for providing the substrate with gas required for thin film deposition.

4. The semiconductor reaction chamber according to claim 3, wherein: In the first type of air inlet flange, the air inlet channel is a first vertical channel that runs through the entity between the upper surface of the air inlet flange and the film transmission port.

5. The semiconductor reaction chamber according to claim 3, wherein: In the second type of air inlet flange, the air inlet channel includes a second vertical channel and a transverse channel passing through the air inlet flange, wherein the first end of the second vertical channel passes through the upper surface of the air inlet flange, the second end of the second vertical channel is connected to the first end of the transverse channel, and the second end of the transverse channel is exposed to the first transmission port.

6. The semiconductor reaction chamber according to claim 1, wherein: The tray bracket includes a support shaft and a plurality of support arms; one end of the plurality of support arms is fixed on the support shaft, and the other end of the plurality of support arms is fixed to the substrate tray, and the projection length of the support arm on the substrate tray is less than the distance from the ejector pin to the support shaft.

7. The semiconductor reaction chamber according to claim 1, wherein: The lower wall of the cavity body has a groove, which is recessed downward from the upper surface of the lower wall. The stopper includes a lower mounting portion and an upper supporting portion. The lower surface of the mounting portion of the stopper abuts against the bottom of the groove, and the supporting portion of the stopper is used to support the ejector pin.

8. The semiconductor reaction chamber according to claim 7, wherein: When the lower surface of the mounting portion of the stopper is in contact with the groove, a gap is provided between the lower surface of the supporting portion of the stopper and the lower wall.

9. A method for using a semiconductor reaction chamber, characterized in that: A semiconductor reaction chamber according to any one of claims 1 to 8, comprising: Select the first type of air inlet flange; The robot is configured to transfer the substrate into the semiconductor reaction chamber through the substrate transfer port of the first inlet flange and the first transfer port of the chamber; The ejector pin support rises to support the substrate on the upper surface of the ejector pin; The robot arm exits the semiconductor reaction chamber; The ejector support is lowered to allow the substrate to fall onto the substrate tray.

10. A method for using a semiconductor reaction chamber, characterized in that: A semiconductor reaction chamber according to any one of claims 1 to 8, comprising: Select the second type of air inlet flange; Rotating the ejector bracket to stagger the ejector bracket away from the ejector; The robot is configured to transfer the substrate into the semiconductor reaction chamber from the second transfer port of the semiconductor reaction chamber and drop the substrate onto the upper surface of the ejector pin; The robot arm exits the semiconductor reaction chamber; The tray support drives the substrate tray to rise to a process position, where the process position is a position where thin film deposition is performed on the substrate.

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