Device and process for spatial ALD (atomic layer deposition) of composite film layer

Abstract

The invention discloses a device and a process for spatial ALD (atomic layer deposition) of a composite film layer. The process comprises the following steps: determining a precursor and a reaction gas corresponding to each component according to the components in the composite film layer; determining the number of turns of rotation of the wafer carrier according to the content of each component of the composite film layer; placing a wafer in a wafer carrying disc of the chamber; separating gas is introduced, and a first cavity and a second cavity are formed in the cavity; a precursor corresponding to one component is introduced into the first chamber, and corresponding reaction gas is introduced into the second chamber; driving the wafer carrying disc to rotate, and depositing and forming a film layer corresponding to the components on the wafer; introducing a precursor corresponding to the next component into the first chamber, and introducing a reaction gas corresponding to the next component into the second chamber; and the composite film layer is obtained until each component is deposited on the wafer. According to the invention, multiple composite film layers with different proportions can be deposited in the same chamber, and the requirements of yield and high aspect ratio hole filling can be met.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and more specifically, to a device and process for spatial ALD deposition of composite film layers. Background Art

[0002] In the manufacturing process of semiconductor devices, metal films are usually formed on semiconductor wafers through methods such as atomic layer deposition (ALD). ALD (Atomic layer deposition) is a method that can deposit materials layer by layer on the surface of a substrate in the form of a single atomic film. Compared with other deposition methods, it has excellent control over the composition and thickness of the film. The prepared film has good conformality, high purity and uniformity, so it is favored in the field of semiconductor material preparation.

[0003] Spatial ALD (SALD) can realize the functions of traditional time-based ALD in space. SALD is equivalent to traditional time-based ALD, and self-terminating surface self-limiting reaction will also occur. Therefore, SALD can also achieve high-precision growth in each cycle and conformal capability with high aspect ratio characteristics. In addition to the unique advantages of traditional ALD, SALD can also increase the deposition rate by two orders of magnitude.

[0004] However, the dielectric layer used for high-k storage is generally a multi-component composite film layer, such as Al x Zr 1-x O、Hf x Zr 1-x O, etc. In this case, the efficiency of traditional single-wafer deposition is low, the furnace tube deposition method has the problem of poor filling of high aspect ratio holes, and it is difficult to achieve multi-component composite film deposition using conventional SALD. Summary of the invention

[0005] In view of this, the main purpose of the present invention is to provide an improved spatial ALD process for depositing composite film layers. The present invention combines spatial and temporal methods to enable it to deposit multiple layers of composite film layers in different proportions in the same chamber, thereby meeting the production output and high aspect ratio hole filling requirements.

[0006] To achieve the above object, the technical solution of the present invention is as follows: A process for spatial ALD deposition of a composite film layer comprises the following steps: Determining the precursor and reaction gas corresponding to each component according to the components in the composite film layer, wherein the composite film layer includes at least two components, and each component corresponds to one film layer; Determine the number of rotations of the wafer carrier when the precursor corresponding to each component is introduced into the chamber according to the content of each component in the composite film layer; The wafer is sent into the chamber and placed on a wafer carrier in the chamber; Passing separation gas to form a gas curtain in the chamber, so that a first chamber and a second chamber are formed in the chamber; A precursor corresponding to one of the components is introduced into the first chamber, and a corresponding reaction gas is introduced into the second chamber; The wafer carrier is driven to rotate, and each time the wafer carrier rotates one circle, the wafer contacts the precursor in the first chamber and the reaction gas in the second chamber respectively; Determine whether the number of rotations of the wafer carrier reaches the number of rotations corresponding to the component, and if so, stop introducing the precursor corresponding to the component into the first chamber, and at this time, deposit a film layer corresponding to the component on the wafer; A precursor corresponding to the next component is introduced into the first chamber, and a reaction gas corresponding to the next component is introduced into the second chamber; The last three steps are repeated until each component is deposited on the wafer to obtain a composite film layer.

[0007] Furthermore, the composite film layer is composed of two components, wherein the reaction gases corresponding to the two components are the same.

[0008] Furthermore, the composite film layer is composed of two components, wherein the reaction gases corresponding to the two components are different, and two groups of reaction gas input units are arranged in the second chamber, each group inputting one reaction gas.

[0009] Furthermore, the reaction gas includes at least one of ozone, hydrogen peroxide, oxygen, nitrous oxide, water vapor, and ammonia.

[0010] Furthermore, in the first chamber, each precursor is provided with a set of corresponding precursor input units for separately conveying the corresponding precursor.

[0011] Furthermore, the air curtain is formed in the middle of the chamber, dividing the chamber into a first chamber and a second chamber of the same size.

[0012] Furthermore, when the precursor corresponding to each of the components is introduced into the chamber, the number of rotations of the wafer carrier is an integer multiple of the content of the corresponding component, or an integer multiple ± (1~2), and the number of rotations is ≥1.

[0013] The present invention also aims to provide a device for implementing the above process, the device comprising: A chamber, the chamber is circular, a wafer carrier is arranged inside, and a plurality of grooves for placing wafers are arranged in a circumferential array on the wafer carrier; A rotation driving member connected to the wafer carrier and used to drive the wafer carrier to rotate in the chamber; A separation gas input unit, comprising a separation gas dispersion mechanism disposed above the interior of the chamber and a separation gas delivery pipe connected to the separation gas dispersion mechanism, wherein the input end of the separation gas delivery pipe is connected to a separation gas source; the separation gas delivery pipe is used to deliver the separation gas to the separation gas dispersion mechanism, and then output the separation gas through the separation gas dispersion mechanism to form a gas curtain in the chamber, wherein the gas curtain separates the chamber into a first chamber and a second chamber; At least two precursor delivery units are provided, each of which comprises a precursor dispersing mechanism disposed above the interior of the first chamber and a precursor delivery pipe connected to the precursor delivery pipe, the precursor delivery pipe is used to deliver the precursor to the precursor dispersing mechanism, and then disperse the precursor in the first chamber through the precursor dispersing mechanism, and the input end of each precursor delivery pipe is connected to a different precursor gas source; There is at least one reaction gas input unit, each of which comprises a reaction gas dispersing mechanism disposed above the interior of the second chamber and a reaction gas delivery pipe connected to the pipeline, the reaction gas delivery pipe is used to deliver the reaction gas to the reaction gas dispersing mechanism, and then disperse the reaction gas in the second chamber through the reaction gas dispersing mechanism; the input end of each reaction gas delivery pipe is connected to a different reaction gas source; The controller outputs a control signal to control the rotary drive, the separation gas input unit, the precursor delivery unit and the reaction gas input unit to implement any of the above-mentioned processes.

[0014] Compared with the prior art, the present invention has the following advantages: (1) Compared with the traditional SALD deposition method, the present invention realizes the deposition of multi-component composite film layers in different proportions, while having the advantages of high throughput and good high aspect ratio hole filling of the traditional SALD.

[0015] (2) Compared with SALD, which can realize deposition of multi-component composite films by upgrading hardware, the present invention has the advantages of low modification difficulty, simple hardware, and can more freely realize deposition of multi-component composite films of various proportions, while having a relatively higher output. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 1 is a schematic diagram of the top view of the structure of the device for spatial ALD deposition of composite film layers in an embodiment of the present invention.

[0017] Figure 2 It is a schematic diagram of the internal structure of the side of the device for spatial ALD deposition of composite film layers in an embodiment of the present invention.

[0018] Figure 3It is a schematic diagram of the process flow of the spatial ALD deposition of the composite film layer in an embodiment of the present invention.

[0019] Figure 4 This is a schematic diagram of the gas inlet in the process of spatial ALD deposition of composite film layers in the present invention. Figure 1 .

[0020] Figure 5 This is a schematic diagram of the gas inlet in the process of spatial ALD deposition of composite film layers in the present invention. Figure 2 .

[0021] Figure 6 This is a schematic diagram of the gas inlet in the process of spatial ALD deposition of composite film layers in the present invention. Figure 3 .

[0022] Description of reference numerals: 1. Chamber; 11. First chamber; 12. Second chamber; 2. Separation gas input unit; 21. Separation gas dispersion mechanism; 22. Separation gas delivery pipe; 23. Separation gas source; 3. Precursor delivery unit; 31. Precursor dispersion mechanism; 32. Precursor delivery pipe; 33. Precursor gas source; 4. Reaction gas input unit; 41. Reaction gas dispersion mechanism; 42. Reaction gas delivery pipe; 43. Reaction gas source.

[0023] 5. Wafer; 6. Valve; 7. Wafer carrier. DETAILED DESCRIPTION

[0024] Many specific details are set forth in the following description to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways than those described herein, and those skilled in the art can make similar modifications without violating the connotation of the present invention, so the present invention is not limited to the specific implementation disclosed below.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0026] Unless otherwise specified, the materials and reagents used in the present invention can be obtained from commercial products in the art.

[0027] refer to Figure 1 and Figure 2 As shown, this embodiment provides a device for spatial ALD deposition of a composite film layer, comprising: The chamber 1 is formed by a cavity body and a cover body. The chamber 1 is circular and has a wafer carrier 7 disposed therein. The wafer carrier 7 has a plurality of grooves arranged in a circumferential array on the circumferential array for placing the wafer 5. A rotary drive member (not shown), connected to the wafer carrier 7, for driving the wafer carrier to rotate in the chamber 1, thereby driving the wafer 5 to rotate; The separation gas input unit 2 includes a separation gas dispersion mechanism 21 disposed above the interior of the chamber 1 and a separation gas delivery pipe 22 connected to the separation gas delivery pipe 22, wherein the input end of the separation gas delivery pipe 22 is connected to a separation gas source 23; the separation gas delivery pipe 22 is used to deliver the separation gas to the separation gas dispersion mechanism 21, and then output the separation gas through the separation gas dispersion mechanism 21 to form an air curtain in the chamber 1, and the air curtain separates the chamber 1 into a first chamber 11 and a second chamber 12; At least two precursor delivery units 3 are provided, each of which includes a precursor dispersion mechanism 31 disposed above the first chamber 11 and a precursor delivery pipe 32 connected to the precursor dispersion mechanism 31, the precursor delivery pipe 32 is used to deliver the precursor to the precursor dispersion mechanism 31, and then disperse the precursor in the first chamber 11 through the precursor dispersion mechanism 31, and the input end of each precursor delivery pipe 32 is connected to a different precursor gas source 33; At least one reaction gas input unit 4 is provided, and each reaction gas input unit 4 includes a reaction gas dispersion mechanism 41 disposed above the interior of the second chamber 12 and a reaction gas delivery pipe 42 connected to the pipeline thereof, and the reaction gas delivery pipe 42 is used to deliver the reaction gas to the reaction gas dispersion mechanism 41, and then disperse the reaction gas in the second chamber 12 through the reaction gas dispersion mechanism 41; the input end of each reaction gas delivery pipe 42 is connected to a different reaction gas source 43; Valves 6 are installed on the separation gas delivery pipe 22, the precursor delivery pipe 32 and the reaction gas delivery pipe 42; The controller is signal-connected to the rotary drive member and each valve 6, and is used to output control signals to control the rotation of the rotary drive member and the on-off of each valve 6, thereby realizing automatic control.

[0028] In the present invention, by placing the wafer 5 in the groove of the wafer carrier 7, the rotating driving member drives the wafer carrier 7 to rotate, thereby driving the wafer 5 to rotate in the chamber 1, so that it can repeatedly pass through the first chamber 11 and the second chamber 12. When passing through the first chamber 11, it can contact with the precursor gas in the first chamber 11, and the precursor gas can be adsorbed on the wafer 5. When it continues to rotate through the second chamber 12, it can contact with the reaction gas in the second chamber 12, and the reaction gas reacts with the precursor adsorbed on the wafer, thereby obtaining a film layer corresponding to the precursor; when it rotates to the set number of turns, the precursor corresponding to the next component can be introduced, and the above steps can be repeated to obtain a film layer corresponding to the next component. According to the number of rotations of the wafer when each component is introduced, a multi-component composite film layer of a specific proportion can be obtained. That is, the device provided by the present invention does not require complex upgrades to the machine hardware, and can prepare the corresponding multi-component composite film layer in the same chamber; at the same time, it can meet the needs of high yield and multi-component composite film layers of different components.

[0029] Furthermore, this embodiment provides a process for depositing a composite film layer by spatial ALD, which specifically includes the following steps: S1. Determine the precursor and reaction gas corresponding to each component according to the components in the composite film layer, wherein the composite film layer includes at least two components, and each component corresponds to one film layer; S2. Determine the number of rotations of the wafer carrier when the precursor corresponding to each component is introduced into the chamber according to the content of each component in the composite film layer; S3, sending the wafer into the chamber and placing it on the wafer carrier in the chamber; S4, introducing separation gas to form a gas curtain in the chamber, so that a first chamber and a second chamber are formed in the chamber; S5, introducing a precursor corresponding to one of the components into the first chamber, and introducing a corresponding reaction gas into the second chamber; S6, driving the wafer carrier to rotate, and each time the wafer carrier rotates one circle, the wafer contacts the precursor in the first chamber and the reaction gas in the second chamber once respectively; S7, determining whether the number of rotations of the wafer carrier reaches the number of rotations corresponding to the component, and if so, stopping the introduction of the precursor corresponding to the component into the first chamber, and depositing a film layer corresponding to the component on the wafer; S9, introducing a precursor corresponding to the next component into the first chamber, and introducing a reaction gas corresponding to the next component into the second chamber; S10, repeat the above three steps S6-S9 until each component is deposited on the wafer to obtain a composite film layer.

[0030] Among them, in the ALD deposition of composite film layers, the precursors generally include metal organic compounds, organic gases, etc., such as metal fatty acid salts (such as aluminum acetate, manganese acetate), metal alkoxides (such as dimethyl acetylacetonate aluminum), etc.

[0031] The reaction gas generally includes ozone, hydrogen peroxide, oxygen, laughing gas, water vapor, ammonia and other gases. If the composite film layer contains the components of the oxide film layer, then the corresponding reaction gas of oxygen or water vapor can be introduced; if the composite film layer contains the components of the nitride film layer, then the corresponding reaction gas of laughing gas or ammonia can be introduced.

[0032] The separation gas can generally be an inert gas such as argon.

[0033] Driven by the rotation of the wafer carrier, when the wafer passes through the first chamber, the precursor introduced into the first chamber is adsorbed on the wafer. The wafer continues to rotate. When passing through the second chamber, the precursor adsorbed on the surface of the wafer can react with the reaction gas in the second chamber to generate a film layer of corresponding components.

[0034] At the same time, when the wafer passes through the separation gas between the first chamber 11 and the second chamber 12 , the separation gas can also purge and remove excess precursors on the surface of the wafer.

[0035] At present, the components of the composite membrane layer generally consist of two components, that is, corresponding to two membrane layers. Of course, in some special cases, it can also consist of three components or more than three components, and no specific limitation is made here.

[0036] For the case of two components, the reaction gases corresponding to the two components can be the same, but the corresponding precursors are different. For example, if both components are oxide films, Al x Zr 1-x O、Hf x Zr 1-x Of course, the reaction gases corresponding to the two components may be different. In this case, two groups of reaction gas input units are provided in the second chamber, and each group can input one reaction gas to avoid contamination caused by the reaction gases sharing the reaction gas input unit.

[0037] Similarly, in the first chamber, each precursor is provided with a corresponding set of precursor input units for separately delivering the corresponding precursors to ensure the purity of the input precursors and avoid mutual influence.

[0038] Next, the composite film B is deposited x C y O (x+y=1) film layer is used as an example, where x and y are the molar contents of the corresponding elements, B x C yThe O film layer contains two components, BO and CO. According to the values ​​of x and y, it is preliminarily determined that when depositing component BO, the wafer carrier needs to rotate m times, and when depositing component CO, the wafer carrier needs to rotate n times.

[0039] Among them, the value of m is generally an integer multiple of x when initially determined, and then it can be adjusted according to the actual process results. For example, when m is an integer multiple of x, the content of the BO film layer is low, and one more rotation can be added; therefore, m turns can be equal to an integer multiple of x, or not equal to an integer multiple of x in some cases. If it is not equal to an integer multiple of x, it is generally an integer multiple of x ± (1~2). After the process adjustment is determined, the final value shall prevail.

[0040] Similarly, the value of n can be determined as an integer multiple of y when it is initially determined; then it can be debugged according to the actual process results. For example, when n is an integer multiple of y, if the resulting CO film content is low, the rotation can be increased by one circle (if the content is correspondingly high, the rotation can be reduced by one circle accordingly); therefore, the value of n can be equal to an integer multiple of y, or in some cases not equal to an integer multiple of y. If it is not equal to an integer multiple of y, it is generally an integer multiple of y ±1. After the process adjustment is determined, the final value shall prevail.

[0041] After process debugging, it was finally determined that the number of rotations corresponding to each component, namely the BO membrane layer and the CO membrane layer, were m and n, respectively.

[0042] It should be noted that, after actual debugging results, the values ​​of m and n are generally 1-10. That is, when depositing a precursor of a certain component, the number of rotations of the wafer carrier is generally within 10.

[0043] At the same time, according to the BO film layer, the corresponding precursor is determined to be precursor B, and the corresponding reaction gas is gas D (oxygen). According to the CO film layer, the corresponding precursor is determined to be precursor C, and the corresponding reaction gas is also gas D.

[0044] Then combine Figure 3 and Figure 4 As shown, Figure 3 The substrate in the figure refers to the wafer, the separation curtain gas refers to the separation gas, and the carrier refers to the wafer carrier. Perform the following operations: First, the BO film layer is deposited, and precursor B (the precursor corresponding to the BO film layer), gas A (separation gas, introduced in the middle of the chamber, the chamber is separated into two spaces, namely the first chamber and the second chamber) and gas D (the reaction gas corresponding to the BO film layer) are introduced. Precursor B is introduced into the first chamber, and gas D is introduced into the second chamber. After the wafer carrier rotates m times, the introduction of precursor B is stopped, and precursor C (the precursor corresponding to the CO film layer) is switched to the first chamber. The wafer carrier rotates n times, and a certain proportion of multi-component composite film layers can be deposited in the same chamber. This method does not require complex upgrades to the machine hardware, and can meet the needs of high production and multi-component composite film layers with different components.

[0045] Continue to refer Figure 5 As shown, in some embodiments, when depositing a BO film layer, the precursor B and the gas D are introduced in no particular order, and they can be introduced simultaneously; when depositing a CO film layer, the precursor C and the gas D are introduced in no particular order, and they can be introduced simultaneously.

[0046] refer to Figure 6 As shown, it is an embodiment in which the reaction gases of the two components, i.e. the two film layers, are different, wherein the precursor B and the reaction gas D cooperate to form one film layer, and the precursor C and the reaction gas E cooperate to form another film layer; in this embodiment, assuming that the reaction gas D is oxygen, it cooperates with the precursor B to form an oxide film layer, and assuming that the reaction gas E is nitrogen, then the precursor C and the reaction gas E can cooperate to form a nitride film layer.

[0047] In summary, compared with the traditional SALD deposition method, the present invention realizes the deposition of multi-component composite film layers in different proportions, and at the same time has the advantages of high throughput and good high aspect ratio hole filling of the traditional SALD.

[0048] Compared with SALD which requires upgrading hardware to achieve deposition of multi-component composite films, the present invention has low modification difficulty, simple hardware, can more freely achieve deposition of multi-component composite films in various proportions, and has a relatively higher output.

[0049] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0050] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] In the description of this specification, the description with reference to the terms "this embodiment", "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in a suitable manner in any at least one embodiment or example. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory.

[0052] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0053] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0054] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A process for depositing a composite film layer using spatial ALD, characterized in that: The following steps are involved: Determining the precursor and reaction gas corresponding to each component according to the components in the composite film layer, wherein the composite film layer includes at least two components, and each component corresponds to one film layer; Determine the number of rotations of the wafer carrier when the precursor corresponding to each component is introduced into the chamber according to the content of each component in the composite film layer; The wafer is sent into the chamber and placed on a wafer carrier in the chamber; Passing separation gas to form a gas curtain in the chamber, so that a first chamber and a second chamber are formed in the chamber; A precursor corresponding to one of the components is introduced into the first chamber, and a corresponding reaction gas is introduced into the second chamber; The wafer carrier is driven to rotate, and each time the wafer carrier rotates one circle, the wafer contacts the precursor in the first chamber and the reaction gas in the second chamber respectively; Determine whether the number of rotations of the wafer carrier reaches the number of rotations corresponding to the component, and if so, stop introducing the precursor corresponding to the component into the first chamber, and at this time, deposit the film layer corresponding to the component on the wafer; A precursor corresponding to the next component is introduced into the first chamber, and a reaction gas corresponding to the next component is introduced into the second chamber; The last three steps are repeated until each component is deposited on the wafer to obtain a composite film layer.

2. The process according to claim 1, characterized in that The composite film layer is composed of two components, wherein the reaction gases corresponding to the two components are the same.

3. The process according to claim 1, characterized in that The composite film layer is composed of two components, wherein the reaction gases corresponding to the two components are different. Two groups of reaction gas input units are arranged in the second chamber, and each group inputs one reaction gas.

4. The process according to any one of claims 1 to 3, characterized in that: The reaction gas includes at least one of ozone, hydrogen peroxide, oxygen, nitrous oxide, water vapor, and ammonia.

5. The process according to claim 1, characterized in that In the first chamber, each precursor is provided with a corresponding set of precursor input units for separately conveying the corresponding precursor.

6. The process according to claim 1, characterized in that The air curtain is formed in the middle of the chamber to separate the chamber into a first chamber and a second chamber of the same size.

7. The process according to claim 1, characterized in that When the precursor corresponding to each of the components is introduced into the chamber, the number of rotations of the wafer carrier is an integer multiple of the content of the corresponding component, or an integer multiple ±1~2, and the number of rotations is ≥1.

8. A device for spatial ALD deposition of composite film layers, characterized in that: include: A chamber, the chamber is circular, a wafer carrier is arranged inside, and a plurality of grooves for placing wafers are arranged in a circumferential array on the wafer carrier; A rotation driving member connected to the wafer carrier and used to drive the wafer carrier to rotate in the chamber; A separation gas input unit, comprising a separation gas dispersion mechanism disposed above the interior of the chamber and a separation gas delivery pipe connected to the separation gas dispersion mechanism, wherein the input end of the separation gas delivery pipe is connected to a separation gas source; the separation gas delivery pipe is used to deliver the separation gas to the separation gas dispersion mechanism, and then output the separation gas through the separation gas dispersion mechanism to form a gas curtain in the chamber, wherein the gas curtain separates the chamber into a first chamber and a second chamber; At least two precursor delivery units are provided, each of which comprises a precursor dispersing mechanism disposed above the interior of the first chamber and a precursor delivery pipe connected to the precursor delivery pipe, the precursor delivery pipe is used to deliver the precursor to the precursor dispersing mechanism, and then disperse the precursor in the first chamber through the precursor dispersing mechanism, and the input end of each precursor delivery pipe is connected to a different precursor gas source; There is at least one reaction gas input unit, each of which comprises a reaction gas dispersing mechanism disposed above the interior of the second chamber and a reaction gas delivery pipe connected to the pipeline, the reaction gas delivery pipe is used to deliver the reaction gas to the reaction gas dispersing mechanism, and then disperse the reaction gas in the second chamber through the reaction gas dispersing mechanism; the input end of each reaction gas delivery pipe is connected to a different reaction gas source; A controller outputs a control signal to control the rotary drive, the separation gas input unit, the precursor delivery unit and the reaction gas input unit to implement the process described in any one of claims 1 to 7.

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