Connection structure and TC wafer temperature measurement system

Abstract

The present invention provides a connection structure and a TC wafer temperature measurement system, belonging to the technical field of semiconductor equipment. The connection structure includes an insulating layer, a through-belt and a plurality of leads. The leads include a first part of leads and a second part of leads. The first part of leads is wrapped inside an insulating tube, and the second part of leads is arranged on the through-belt. The insulating tube is fixed on the insulating layer on the side close to the through-belt. The insulating layer and the through-belt are butted against each other. The through-belt and the insulating layer do not overlap, and the insulating tube and the through-belt do not overlap. When the connection structure is applied to the TC wafer temperature measurement system to test the temperature of a CVD machine cavity, since the through-belt and the insulating layer do not overlap in the connection structure, the insulating tube and the through-belt do not overlap, the insulating layer and the insulating tube are all placed inside the CVD cavity, and the through-belt is located outside the CVD cavity, it will not affect the sealing effect of the CVD cavity, and it reduces or avoids the problem of abnormal function of the TC wafer temperature measurement system, thereby reducing the cost.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor equipment, and more specifically, relates to a connection structure and a TC wafer temperature measurement system. Background Art

[0002] Chemical Vapor Deposition (CVD) is a technology used to prepare thin film materials. It is widely used in semiconductor, optics, electronics and other fields. CVD equipment is a thermal equipment that uses chemical vapor deposition process to generate high-purity, dense, high-performance coating films on the surface of substrates such as silicon wafers. It has the advantages of high deposition rate, easy to control film formation, good uniformity and repeatability, excellent step coverage, wide range of use, simple equipment, etc. It is widely used in the preparation and manufacturing of various thin film coatings such as SiC, TaC, HfC, PyC, etc.

[0003] In the CVD process, the uniformity and accuracy of temperature have an important impact on the quality and yield of thin film coatings. Therefore, it is necessary to test the temperature in the CVD machine chamber during the CVD installation process, calibration test process or abnormal cause analysis process. The temperature in the existing CVD chamber is often obtained by real-time measurement of the wafer surface temperature through a thermocouple wafer (TC wafer) temperature measurement system. The principle of the TC wafer temperature measurement system is to obtain the actual temperature measurement value of a specific position of the wafer and the temperature distribution of the entire wafer through a high-temperature resistant sensor at a specific position on the wafer surface. These temperature data can help engineers evaluate the stability of the CVD process, track temperature changes, and adjust process parameters to ensure product quality and performance.

[0004] When the existing TC wafer temperature measurement system performs temperature testing on a CVD machine, the TC wafer may malfunction. When the TC wafer malfunctions, the TC wafer needs to be replaced, which reduces the service life of the TC wafer temperature measurement system and increases production costs. Summary of the invention

[0005] The object of the present invention is to provide a connection structure and a TC wafer temperature measurement system, which can solve the problem that the TC wafer function abnormality during the CVD machine temperature test reduces the service life of the TC wafer temperature measurement system and increases the cost.

[0006] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides a connection structure, which is applied to a TC wafer temperature measurement system and includes an insulating layer, a through-belt and a plurality of leads;

[0007] Each of the lead wires comprises a first lead wire portion and a second lead wire portion, wherein the first lead wire portion is wrapped inside an insulating tube, and the second lead wire portion is arranged on the through-belt;

[0008] The side of the insulating tube close to the through-belt is fixed on the insulating layer, the insulating layer is butted against the through-belt, the through-belt and the insulating layer do not overlap, and the insulating tube and the through-belt do not overlap.

[0009] In one embodiment, a first fixing member is further included, and the first fixing member is used to fix the positions of the through-belt and the insulating layer.

[0010] In one embodiment, the first fixing member is a pulling wire, one end of the pulling wire is fixed to the through-belt, and the other end of the pulling wire is fixed to the insulating layer.

[0011] In one embodiment, the number of the traction wires is two, the traction wires are arranged in parallel with the lead wires, and a plurality of the lead wires are arranged between the two traction wires;

[0012] Alternatively, the number of the traction wires is greater than two, and the traction wires are arranged at intervals.

[0013] In one embodiment, the pulling wire is a high temperature resistant metal wire, a ceramic fiber wire or a quartz fiber wire.

[0014] In one embodiment, the traction wire and the lead wire are both metal wires with a diameter of ≤0.1 mm.

[0015] In one embodiment, the insulating layer and the insulating tube are made of any one or two of ceramic fiber, glass fiber or quartz fiber materials.

[0016] In one embodiment, the through tape is a polyimide film, a polyester film, a polyimide film, a polytetrafluoroethylene film, a polyvinyl chloride film or a polyethylene terephthalate film.

[0017] In one embodiment, a second fixing member is further included, and the second fixing member is used to fix the positions of the insulating tube and the insulating layer.

[0018] A second aspect of the present invention provides a TC wafer temperature measurement system, comprising a wafer, a temperature sensor, a connector and the connection structure as described above, wherein the number of the temperature sensors is multiple, and the temperature sensor is used to obtain the temperature of the point to be measured on the surface of the wafer, the first part of the lead is connected to the temperature sensor, and the second part of the lead is connected to the connector.

[0019] The connection structure provided by the present invention includes an insulating layer, a through-belt and multiple leads, each of the leads includes a first part of the lead and a second part of the lead, the first part of the lead is wrapped inside an insulating tube, the second part of the lead is arranged on the through-belt, the side of the insulating tube close to the through-belt is fixed on the insulating layer, the insulating layer is connected to the through-belt, the through-belt and the insulating layer do not overlap, and the insulating tube and the through-belt do not overlap. When the connection structure is applied to the TC wafer temperature measurement system to test the CVD machine, the first part of the lead is connected to the temperature sensor, and the second part of the lead is connected to the joint. Since the through-belt and the insulating layer in the connection structure do not overlap, and the insulating tube and the through-belt do not overlap, the sealing ring of the CVD chamber is pressed on the through-belt at the joint between the insulating layer and the through-belt, the high-temperature resistant and insulating insulating layer and the insulating tube are all placed inside the CVD chamber, and the through-belt is located outside the CVD chamber, which will not affect the sealing effect of the CVD chamber, and reduces or avoids the problem of the through-belt entering the CVD chamber and being burned, resulting in abnormal function of the TC wafer temperature measurement system, thereby improving the service life of the TC wafer temperature measurement system and reducing costs.

[0020] The TC wafer temperature measurement system provided by the present invention comprises a wafer, a temperature sensor, a joint and the connection structure as described above. The number of the temperature sensors is multiple, and the temperature sensors are used to obtain the temperature of the point to be measured on the surface of the wafer. The first part of the lead of the connection structure of the TC wafer temperature measurement system is connected to the temperature sensor, and the second part of the lead is connected to the joint. Since the through-band and the insulating layer in the connection structure do not overlap, and the insulating tube and the through-band do not overlap, when the TC wafer temperature measurement system is applied to CVD machine testing, the insulating layer and the insulating tube that are resistant to high temperature and have an insulating function are all placed inside the CVD chamber, and the through-band is located outside the CVD chamber, which will not affect the sealing effect of the CVD chamber, and reduces or avoids the problem of the through-band entering the CVD chamber and being burned, resulting in abnormal function of the TC wafer temperature measurement system, thereby improving the service life of the TC wafer temperature measurement system and reducing the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 A schematic diagram of a connection structure provided by an embodiment of the present invention;

[0023] Figure 2A schematic diagram of the structure of a TC wafer temperature measurement system provided by an embodiment of the present invention;

[0024] Figure 3 A schematic diagram of the structure of the connection structure and the through-belt joint provided by an embodiment of the present invention;

[0025] Figure 4 A schematic diagram of the structure of the connection structure and the through-belt joint provided in an embodiment of the present invention.

[0026] Among them, the reference numerals in the figure are:

[0027] 1-connection structure; 2-wafer; 3-temperature sensor; 4-connector; 11-insulating layer; 12-through tape; 13-lead; 14-insulating tube; 15-traction wire; 131-first part of lead; 132-second part of lead. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0030] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0031] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0032] In the prior art, in order to avoid short circuit of the leads (TC wires) of thermocouple wafer (TC wafer) temperature measurement systems, high temperature resistant insulating materials, such as ceramic / quartz fiber tubes, are usually wrapped around the outside of each TC wire. When measuring the temperature of TC wafer, the TC wire wrapped with high temperature resistant insulating materials is placed inside the CVD chamber, and a part of the through-band is placed outside the chamber. The end of the through-band that contacts the TC wire wrapped with high temperature resistant insulating materials is pressed tightly by the sealing ring of the CVD chamber. Since the ceramic / quartz fiber tube wrapped on the TC wire has a certain elasticity, if it is not fixed, it is easy to shrink under force during use, which may cause the TC wire to be exposed and short circuit. In addition, if the edge of the ceramic / quartz fiber tube is not fixed, it is easy to loosen the wire and fall off, causing cavity pollution and TC wire exposure. Therefore, during the manufacturing process, the TC wire wrapped with high temperature insulating material and the through-belt placed inside the CVD chamber will have a part of the docking transition area. The TC wire wrapped with high temperature resistant insulating material in the docking transition area is fixed by the through-belt. During the TC wafer temperature test, the CVD chamber needs to be sealed, and the thickness of the through-belt at the sealing ring position must not exceed 0.2mm, otherwise it will affect the sealing effect and cause air leakage. Since the through-belt part of the TC wire wrapped with high temperature resistant insulating material in the docking transition area is thicker (greater than 0.2mm), in order to ensure the sealing of the CVD chamber during the test, the docking transition area of ​​the TC wire wrapped with high temperature insulating material and the through-belt must be placed inside the CVD chamber, so that the sealing ring can be pressed tightly against the insulating film part of the through-belt, thereby ensuring the airtightness of the CVD chamber.

[0033] When the CVD machine is tested, the temperature inside the entire chamber will reach over 350°C, causing the TC wire wrapped with high-temperature insulating material and the transition zone between the through-belt and the TC wafer to be burned due to the high temperature during the test, causing the TC wafer to malfunction. At the same time, the burned part will also cause cavity contamination due to the volatilization of organic matter. When the TC wafer malfunctions or burns out, the risk of use increases and it needs to be replaced, which increases production costs. When the CVD chamber is contaminated, the CVD chamber needs to be cleaned, which reduces production efficiency. Based on the above problems, the present application provides a connection structure and a TC wafer temperature measurement system.

[0034] The connection structure and TC wafer temperature measurement system provided by the present invention are described in detail below in conjunction with specific embodiments.

[0035] Figure 1 A schematic diagram of a connection structure provided in an embodiment of the present invention, Figure 2 For a schematic diagram of the structure of the TCwafer temperature measurement system provided in an embodiment of the present invention, please refer to Figure 1 and Figure 2 A first aspect of the present embodiment provides a connection structure 1, which is applied to a TC wafer temperature measurement system, and includes an insulating layer 11, a through-belt 12, and a plurality of leads 13, each of the leads 13 includes a first portion of the lead 131 and a second portion of the lead 132, the first portion of the lead 131 is wrapped inside an insulating tube 14, and the second portion of the lead 132 is arranged on the through-belt 12.

[0036] The insulating tube 14 is fixed on the insulating layer 11 at one side close to the through-belt 12 , the insulating layer 11 is butted against the through-belt 12 , the through-belt 12 and the insulating layer 11 do not overlap, and the insulating tube 14 and the through-belt 12 do not overlap.

[0037] In the CVD process, the uniformity and accuracy of temperature have an important impact on the quality and yield of thin film coating. Therefore, it is necessary to test the temperature inside the CVD machine chamber during the CVD installation process, calibration test process or abnormal cause analysis process. The TC wafer temperature measurement system is an important detection equipment for CVD chamber temperature detection. Its principle is to embed high temperature resistant sensor thermocouples at specific positions on the wafer surface through special processing technology, obtain the actual temperature measurement value of the specific position of the wafer and the temperature distribution of the entire wafer, and thus obtain the temperature inside the CVD chamber. Please refer to Figure 2The TC wafer temperature measurement system of this embodiment includes a wafer 2, a temperature sensor 3, a connector 4 and the above-mentioned connection structure 1, wherein the lead 13 in the connection structure 1 is a conductive wire connecting the temperature sensor 3 and the connector 4. The temperature sensor 3 of the TC wafer temperature measurement system of this embodiment is generally provided in multiples, and each temperature sensor 3 can accurately measure the temperature of a point, thereby obtaining the temperature distribution of the entire surface of the wafer 2. The temperature sensor 3 is connected to the data acquisition device through the lead 13 and the connector 4 for data acquisition and analysis. The analysis system can draw a temperature distribution diagram of the surface of the wafer 2 to help the operator fully understand the temperature status of the wafer.

[0038] When the TC wafer temperature measurement system of this embodiment is used for CVD chamber temperature testing, the first part of the lead 131 is located inside the CVD chamber, and the second part of the lead 132 is located on the through-band 12 and outside the CVD chamber. In this embodiment, the first part of the lead 131 is wrapped inside the insulating tube 14, which prevents the lead 13 from short-circuiting during use, thereby avoiding the problem of contact short-circuiting between the leads 13 causing abnormal function of the TC wafer temperature measurement system. Since the first part of the lead 131 is located in the high temperature area inside the CVD chamber during the use of the TC wafer temperature measurement system, the insulating tube 14 of this embodiment is a ceramic fiber tube or a quartz fiber tube. Ceramic fiber tubes or quartz fiber tubes can maintain their shape and performance stability in high temperature environments (for example, greater than 1000 degrees Celsius). Since the ceramic / quartz fiber tube has a certain degree of elasticity, if it is not fixed, it is easy to be forced to retract during use, resulting in the lead 13 being exposed and short-circuited. In addition, if the edge of the ceramic / quartz fiber tube is not fixed, it is easy to become loose and broken, and slag will fall off, causing cavity pollution and exposure of the lead 13. In this embodiment, the insulating tube 14 is fixed on the insulating layer 11 on the side close to the through-band 12, which avoids the loose and broken edges of the insulating tube 14 during the test, causing cavity pollution and exposure of the lead 13, and further avoids the problem of contact short circuit between the leads 13 causing malfunction of the TC wafer temperature measurement system.

[0039] The insulating layer 11 of this embodiment is a flexible high-temperature insulating layer. For example, the insulating layer 11 of this embodiment can be any one or two of ceramic fiber, glass fiber or quartz fiber materials. The insulating layer 11 of this embodiment is a flexible high-temperature insulating layer. Since the first part of the lead 131 is located in the high-temperature area inside the CVD chamber during the TC wafer temperature measurement system test, the insulating layer 11 of this embodiment is a ceramic fiber tube or a quartz fiber tube. The ceramic fiber tube or the quartz fiber tube can maintain its shape and performance stability in a high-temperature environment (for example, greater than 1000 degrees Celsius), avoiding the problem of the insulating layer 11 being damaged due to high temperature in the high-temperature area inside the CVD chamber.

[0040] In the present embodiment, the insulating layer 11 is butted against the through-belt 12. The butting of the insulating layer 11 and the through-belt 12 in the present embodiment means that the end of the insulating layer 11 is fitted with the end of the through-belt 12. The side of the insulating tube 14 close to the through-belt 12 is fixed on the insulating layer 11, that is, the end of the insulating tube 14 is fixed on the insulating layer 11. The insulating tube 14 in the present embodiment is made of ceramic / quartz fiber tube. If the edge of the ceramic / quartz fiber tube is not fixed, it is easy to loosen and fall off, causing cavity pollution and TC wire exposure. The insulating tube 14 in the present embodiment is fixed on the insulating layer 11 at one end close to the through-belt 12, which avoids the problem of loosening and falling off of the edge of the insulating tube 14 during the test, causing cavity pollution and TC wire exposure.

[0041] When the TC wafer temperature measurement system of this embodiment tests the CVD machine, the sealing ring of the CVD chamber is pressed on the joint of the through-belt 12 and the insulating layer 11. Since the through-belt 12 and the insulating layer 11 do not overlap, and the through-belt 12 and the insulating tube 14 do not overlap, when the sealing ring of the CVD chamber is pressed on the joint of the through-belt 12 and the insulating layer 11, the sealing ring can be pressed only on the through-belt 12. Since the through-belt 12 is relatively thin, it will not affect the sealing effect of the CVD chamber, that is, the airtightness of the CVD chamber is guaranteed. The temperature resistance of the through-belt 12 is generally lower than the temperature resistance of the insulating tube 14 located inside the CVD chamber. The through-belt 12 is located outside the CVD chamber, which avoids the problem that the through-belt 12 enters the CVD chamber and is damaged by the high temperature environment, resulting in a short circuit of the second part lead 132 and causing abnormal TC wafer function, thereby improving the service life of the TC wafer temperature measurement system and reducing costs. At the same time, the problem of high temperature burning the through belt 12 causing organic matter volatilization to pollute the CVD chamber is avoided, and the production efficiency of thin film material preparation of the CVD machine is improved to a certain extent.

[0042] The connection structure provided in this embodiment includes an insulating layer, a through-band and multiple leads, each of the leads includes a first part of the lead and a second part of the lead, the first part of the lead is wrapped inside an insulating tube, the second part of the lead is arranged on the through-band, the side of the insulating tube close to the through-band is fixed on the insulating layer, the insulating layer is connected to the through-band, the through-band and the insulating layer do not overlap, and the insulating tube and the through-band do not overlap. When the connection structure is applied to the TC wafer temperature measurement system to test the CVD machine, the first part of the lead is connected to the temperature sensor, and the second part of the lead is connected to the joint. Since the through-belt and the insulating layer in the connection structure do not overlap, and the insulating tube and the through-belt do not overlap, the sealing ring of the CVD chamber is pressed on the through-belt at the joint between the insulating layer and the through-belt, the high-temperature resistant and insulating insulating layer and the insulating tube are all placed inside the CVD chamber, and the through-belt is located outside the CVD chamber, which will not affect the sealing effect of the CVD chamber, and reduces or avoids the problem that the through-belt enters the CVD chamber and is burned, causing the lead of the connection structure to short-circuit and cause the TC wafer temperature measurement system to function abnormally, thereby improving the service life of the TCwafer temperature measurement system and reducing the cost. It also avoids the problem that the high temperature burns the through-belt and causes the volatilization of organic matter to pollute the CVD chamber, and to a certain extent improves the production efficiency of the CVD machine thin film material preparation.

[0043] In one embodiment, the connection structure further includes a first fixing member, which is used to fix the positions of the through-belt 12 and the insulating layer 11. Exemplarily, during the manufacturing process of the connection structure 1 of this embodiment, the positions of the through-belt 12 and the insulating layer 11 are first fixed by the first fixing member, so that the side of the insulating tube 14 close to the through-belt 12 is fixed on the insulating layer 11.

[0044] Figure 3 For a structural diagram of the connection structure and the through-belt joint provided in an embodiment of the present invention, please refer to Figure 3 Exemplarily, the first fixing member is a traction wire 15, one end of the traction wire 15 is fixed to the through-belt 12, and the other end of the traction wire 15 is fixed to the insulating layer 11. This embodiment does not particularly limit the fixing method of the traction wire 15 to the through-belt 12 and the fixing method of the traction wire 15 to the insulating layer 11. Exemplarily, the number of the traction wires 15 is two, the traction wires 15 are arranged in parallel with the lead wires 13, and a plurality of the lead wires 13 are arranged between the two traction wires 15. In this embodiment, the number of the traction wires 15 is two, and the two traction wires 15 are respectively arranged on both sides of the lead wire 13. One end of the traction wire 15 is fixed to the through-belt 12, and the other end of the traction wire 15 is fixed to the insulating layer 11. The manufacturing method is simple.

[0045] Figure 4 For a structural diagram of the connection structure and the through-belt joint provided in an embodiment of the present invention, please refer to Figure 4 Optionally, the number of the traction wires 15 is greater than two, and the traction wires 15 are arranged at intervals. The number of the traction wires 15 in this embodiment is greater than two, so that the through-belt 12 and the insulating layer 11 are fixed more stably. Exemplarily, the insulating layer 11 in this embodiment is ceramic fiber, glass fiber or quartz fiber, one end of the traction wire is passed through and fixed on the insulating layer 11, and the other end of the traction wire 15 is fixed on the through-belt 12 by hot melt.

[0046] In one embodiment, the traction wire 15 is a high temperature resistant metal wire, ceramic fiber wire or quartz fiber wire. One end of the traction wire 15 of this embodiment is fixed on the through-belt 12, and the other end of the traction wire 15 is fixed on the insulating layer 11. Since the insulating layer 11 is located inside the CVD chamber during the use of the TC wafer temperature measurement system, and the inside of the CVD chamber is a high temperature area, the traction wire 15 of this embodiment is made of a high temperature resistant metal wire, ceramic fiber wire or quartz fiber wire. During the use of the connection structure, the traction wire 15 can maintain a stable state under high temperature conditions.

[0047] Preferably, the lead wire 13 and the traction wire 15 are both metal wires with a diameter of ≤0.1mm. Since the CVD chamber needs to be sealed during the test process of the TC wafer temperature measurement system, the thickness of the through-band 12 at the sealing ring position is required not to exceed 0.2mm. The diameters of the traction wire 15 and the lead wire 13 of this embodiment are both ≤0.1mm, which can ensure that the thickness of the through-band 12 at the sealing ring position (the sum of the through-band thickness and the traction wire diameter, and the sum of the through-band thickness and the lead wire diameter) is less than 0.2mm, thereby ensuring the sealing of the CVD chamber during the test. The traction wire and the lead wire of this embodiment are both metal wires with high strength, which improves the service life of the connection structure 1 to a certain extent.

[0048] In the above embodiment, the through-belt 12 may be a polyimide film, a polyester film, a polyimide film, a polytetrafluoroethylene film, a polyvinyl chloride (PVC) film, or a polyethylene terephthalate (PET) film. The through-belt 12 made of the above material can withstand a temperature of up to 500°C, has a strong tensile strength, and is not prone to brittle fracture. Since the through-belt 12 may be pulled when adjusting the position of the through-belt 12 of the connecting structure 1 during the use of the TC wafer temperature measurement system, the through-belt 12 of the present embodiment is a polyimide film, a polyester film, a polyimide film, a polytetrafluoroethylene film, a polyvinyl chloride (PVC) film, or a polyethylene terephthalate (PET) film, which has a strong tensile strength and increases the service life of the through-belt 12. ‌

[0049] In one embodiment, the connection structure 1 further includes a second fixing member, and the second fixing member is used to fix the position of the insulating tube 14 and the insulating layer 11. The connection structure of this embodiment also includes a second fixing member, and the position of the insulating tube 14 and the insulating layer 11 is fixed by the second fixing member, so that the insulating tube 14 and the insulating layer 11 are fixed more firmly. The insulating tube 14 of this embodiment is a ceramic / quartz fiber tube. Since the ceramic / quartz fiber tube 14 has a certain elasticity, this embodiment fixes the insulating tube 14 by the second fixing member, further avoiding the situation that the insulating tube 14 is easily retracted by force during use, resulting in the lead 13 being exposed and short-circuited. At the same time, it further avoids the problem that the insulating tube 14 becomes loose, opens, and falls off, causing cavity pollution and lead exposure.

[0050] In the above embodiment, the through-belt 12 includes a first film layer and a second film layer stacked together, the lead 13 is located between the first film layer and the second film layer, and the first film layer and the second film layer are used to fix the lead 13. The lead 13 of the connection structure of this embodiment is fixed by pressing the first film layer and the second film layer. The through-belt 12 of this embodiment can be a polyimide film, a polyester film, a polyimide film, a polytetrafluoroethylene film, a polyvinyl chloride (PVC) film, and a polyethylene terephthalate (PET) film. After the lead 13 of the connection structure of this embodiment is arranged between the first film layer and the second film layer, the first film layer and the second film layer are generally fixed by high-temperature pressing.

[0051] The connection structure provided by the embodiment of the present invention includes an insulating layer, a through-belt and multiple leads, each of the leads includes a first part of the lead and a second part of the lead, the first part of the lead is wrapped inside an insulating tube, the second part of the lead is arranged on the through-belt, the side of the insulating tube close to the through-belt is fixed on the insulating layer, the insulating layer is connected to the through-belt, the through-belt and the insulating layer do not overlap, and the insulating tube and the through-belt do not overlap. When the connection structure is applied to the TC wafer temperature measurement system to test the temperature of the CVD chamber, the first part of the lead is connected to the temperature sensor, and the second part of the lead is connected to the joint. Since the through-band and the insulating layer in the connection structure do not overlap, and the insulating tube and the through-band do not overlap, the insulating layer and the insulating tube that are resistant to high temperatures and have insulating effects are all placed inside the CVD chamber, and the through-band is located outside the CVD chamber, which will not affect the sealing effect of the CVD chamber, and reduces or avoids the problem of the through-band entering the CVD chamber and being burned, causing the lead of the connection structure to short-circuit and causing the TCwafer temperature measurement system to function abnormally, thereby improving the service life of the TC wafer temperature measurement system and reducing the cost. It also avoids the problem of high temperature burning of the through-band causing organic matter volatilization to pollute the CVD chamber, and to a certain extent improves the production efficiency of thin film material preparation on the CVD machine.

[0052] See also Figure 1 and Figure 2 As shown, the second aspect of this embodiment provides a TC wafer temperature measurement system, including a wafer 2, a temperature sensor 3, a connector 4, and the connection structure 1 described in the above embodiment. There are multiple temperature sensors 3, and the temperature sensor 3 is used to obtain the temperature of the surface of the wafer 2 to be measured. The first part of the lead 131 is connected to the temperature sensor 3, and the second part of the lead 132 is connected to the connector 4.

[0053] The connection structure of this embodiment includes an insulating layer 11, a through-belt 12 and a plurality of leads 13, each lead 13 includes a first portion lead 131 and a second portion lead 132, the first portion lead 131 is wrapped inside an insulating tube 14, and the second portion lead 132 is arranged on the through-belt 12.

[0054] The side of the insulating tube 14 close to the through-belt 12 is fixed on the insulating layer 11 , the insulating layer 11 is butted against the through-belt 12 , the through-belt 12 and the insulating layer 11 do not overlap, and the insulating tube 14 and the through-belt 12 do not overlap.

[0055] The temperature sensor 3 of this embodiment is a thermocouple, which measures temperature by generating electromotive force through the contact of two different metals. It has the characteristics of high sensitivity, fast response speed, high accuracy, good reliability, etc. The connector 4 of this embodiment is usually connected to a data acquisition device, which is responsible for reading and recording the potential difference generated by the thermocouple, converting it into temperature data, and finally displaying it on the display screen.

[0056] The TC wafer temperature measurement system is an important detection device for detecting the temperature of the reaction chamber of the CVD equipment. Its principle is to embed the high temperature resistant sensor thermocouple at a specific position on the surface of the wafer 2 to obtain the actual temperature measurement value of the specific position of the wafer 2 and the temperature distribution of the entire wafer 2. These temperature data can help engineers evaluate the stability of the CVD process, track temperature changes, and adjust process parameters, thereby ensuring the quality and performance of the product. The TC wafer temperature measurement system of this embodiment includes a wafer 2, a temperature sensor 3, a connector 4, and the above-mentioned connection structure 1, wherein the lead 13 in the connection structure 1 is a conductive wire connecting the temperature sensor 3 and the connector 4. The TC wafer temperature measurement system of this embodiment has multiple temperature sensors 3, and each temperature sensor 3 can accurately measure the temperature of a point, thereby obtaining the temperature distribution of the entire surface of the wafer 2. The temperature sensor 3 is connected to the data acquisition device through the lead 13 and the connector 4 for data acquisition and analysis. The analysis system can draw a temperature distribution diagram on the surface of the wafer 2 to help operators fully understand the temperature status of the wafer 2.

[0057] When the TC wafer temperature measurement system of this embodiment tests the CVD machine, the sealing ring of the CVD chamber is pressed on the joint between the through-belt 12 and the insulating layer 11. Since the through-belt 12 and the insulating layer 11 do not overlap, and the through-belt 12 and the insulating tube 14 do not overlap, and the through-belt 12 is relatively thin, when the sealing ring of the CVD chamber is pressed on the joint between the through-belt 12 and the insulating layer 11, the sealing ring can be pressed only on the through-belt 12, so that the insulating layer 11 and the insulating tube 14 are located in the CVD chamber, and the through-belt 12 is located outside the CVD chamber, which will not affect the sealing effect of the CVD chamber, that is, the airtightness of the CVD chamber is guaranteed. The temperature resistance of the through-belt 12 is generally lower than that of the insulating tube 14 located inside the CVD chamber. The through-belt 12 is located outside the CVD chamber, which prevents the through-belt 12 from entering the CVD chamber and being damaged by the high temperature environment, causing the second part of the lead 132 to short-circuit and causing TC wafer malfunction. This increases the service life of the TC wafer temperature measurement system and reduces costs. At the same time, it avoids the problem of high temperature burning the through-belt 12 and causing organic matter volatilization to pollute the CVD chamber, thereby improving the production efficiency of thin film material preparation to a certain extent.

[0058] The TC wafer temperature measurement system provided by the embodiment of the present invention includes a wafer, a temperature sensor connector and the connection structure as described above. The number of the temperature sensors is multiple, and the temperature sensors are used to obtain the temperature of the wafer surface point to be measured. When the TC wafer temperature measurement system is used, the first part of the leads of the connection structure are connected to the temperature sensor, and the second part of the leads are connected to the connector. Since the through-band and the insulating layer in the connection structure do not overlap, and the insulating tube and the through-band do not overlap, the high-temperature resistant and insulating insulating layer and the insulating tube are all placed inside the CVD chamber, and the through-band is located outside the CVD chamber, which will not affect the sealing effect of the CVD chamber, and reduces or avoids the problem that the through-band enters the CVD chamber and is burned, causing the leads of the connection structure to be short-circuited, resulting in abnormal functions of the TC wafer temperature measurement system, and the CVD chamber is contaminated.

[0059] In the above description, the description with reference to the terms "an embodiment", "some embodiments", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0060] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may still be modified, or some or all of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A connection structure, applied to a TC wafer temperature measurement system, characterized in that: It includes an insulating layer, a through tape and a plurality of leads; Each of the lead wires comprises a first lead wire portion and a second lead wire portion, wherein the first lead wire portion is wrapped inside an insulating tube, and the second lead wire portion is arranged on the through-belt; The side of the insulating tube close to the through-belt is fixed on the insulating layer, the insulating layer is butted against the through-belt, the through-belt and the insulating layer do not overlap, and the insulating tube and the through-belt do not overlap.

2. The connection structure according to claim 1, characterized in that: It also includes a first fixing member, which is used to fix the positions of the through-belt and the insulating layer.

3. The connection structure according to claim 2, characterized in that: The first fixing member is a traction wire, one end of the traction wire is fixed on the through-belt, and the other end of the traction wire is fixed on the insulating layer.

4. The connection structure according to claim 3, characterized in that: The number of the traction wires is two, the traction wires are arranged in parallel with the lead wires, and a plurality of the lead wires are arranged between the two traction wires; Alternatively, the number of the traction wires is greater than two, and the traction wires are arranged at intervals.

5. The connection structure according to claim 3, characterized in that: The traction wire is a high temperature resistant metal wire, a ceramic fiber wire or a quartz fiber wire.

6. The connection structure according to claim 3, characterized in that: The lead wire and the traction wire are both metal wires with a diameter of ≤0.1 mm.

7. The connection structure according to claim 1, characterized in that: The insulating layer and the insulating tube are made of any one or two of ceramic fiber, glass fiber or quartz fiber materials.

8. The connection structure according to claim 1, characterized in that: The through-belt is a polyimide film, a polyester film, a polyimide film, a polytetrafluoroethylene film, a polyvinyl chloride film or a polyethylene terephthalate film.

9. The connection structure according to any one of claims 1 to 8, characterized in that: It also includes a second fixing member, which is used to fix the positions of the insulating tube and the insulating layer.

10. The connection structure according to claim 9, characterized in that: The through tape includes a first film layer and a second film layer stacked together, the lead is located between the first film layer and the second film layer, and the first film layer and the second film layer are used to fix the lead.

11. A TC wafer temperature measurement system, characterized in that: include: A wafer, a temperature sensor, a connector, and a connection structure as described in any one of claims 1 to 10, wherein there are multiple temperature sensors, the temperature sensors are used to obtain the temperature of the point to be measured on the surface of the wafer, the first part of the leads are connected to the temperature sensor, and the second part of the leads are connected to the connector.

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