A transducer element electric explosion whole process parameter joint diagnosis method and device

Abstract

The application discloses a transducing element electric explosion whole-process parameter joint diagnosis method and device, belongs to the photoelectric detection technical field, the joint diagnosis device is composed of three parts of a bridge area temperature measurement module based on a multispectral radiation thermometry method, a plasma temperature / electron density measurement module based on an atomic emission spectrometry method and a synchronous trigger module, according to the radiation / emission spectrum characteristics of the bridge area temperature rise, plasma generation and explosive initiation stages in the transducing element electric explosion process, a set of transducing element bridge area temperature and plasma characteristic parameter joint measurement system is developed by combining the multispectral radiation thermometry technology and the atomic emission spectrometry temperature measurement technology, different spectral detection methods and temperature inversion algorithms are adopted for different stages in the transducing element electric explosion process, and high time resolution, wide range synchronous measurement of the transducing element whole-process bridge area temperature and plasma temperature / electron density can be realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photoelectric detection, in particular to the accurate quantitative measurement of bridge zone temperature and plasma temperature / electron density in the electric explosion process of a transducer element. BACKGROUND

[0002] Micro-explosive transducer elements are widely used in weapon ammunition, space launch, flight life-saving, civil engineering blasting and other fields, playing a key role in ignition, fire transmission, delay, etc., and playing a key role in the success or failure of take-off ignition, satellite and rocket separation, etc. The safety and ignition reliability of the micro-explosive transducer elements determines the safety and reliability of the entire weapon system. The study of the initiation mechanism and law of the transducer element is crucial to improve the stability and reliability of the micro-explosive transducer performance, and even affects the combat performance of the entire weapon system.

[0003] The core device of the transducer element is the ignition bridge chip, which realizes the conversion of electric energy to initiation energy, and its structure and transduction characteristics directly affect the ignition and initiation performance of the micro-explosive transducer. The ignition bridge mainly includes metal bridge wire, metal bridge foil and semiconductor bridge. When a pulse current is applied to the bridge zone of the transducer element, the bridge zone material realizes electro-thermal conversion under the action of the current, and the bridge zone temperature rapidly rises to vaporization, and under the action of the electric field, a transient high-temperature, high-energy flux density plasma, shock wave and a large number of active particles are formed. The plasma directly acts on the explosive to realize deflagration to detonation transition (DDT); when the plasma and shock wave act on the flyer, the flyer is sheared and driven to accelerate to several kilometers per second, and impacts the explosive column to realize shock to detonation transition (SDT). In this complex transient physical and chemical process, the full-process quantitative and accurate measurement of the bridge zone temperature and plasma temperature / electron density is crucial for studying the action mechanism of the micro-explosive transducer and characterizing the ignition performance of the micro-explosive transducer. SUMMARY

[0004] The present application provides a new testing idea and testing scheme for high-precision, rapid and joint measurement of bridge zone temperature and plasma characteristic parameters in the ignition and initiation process of the transducer element, aiming at the problems of low time resolution, small temperature measurement range, high cost, low integration of testing instruments and difficulty in joint measurement (the measurement of each characteristic parameter must be tested separately) of the existing bridge zone temperature and plasma characteristic parameter testing device of the transducer element.

[0005] To achieve the above purpose, the technical scheme adopted by the present application is as follows:

[0006] The application discloses a method and device for jointly diagnosing parameters in the whole process of electric explosion of a transducing element.

[0007] The method adopts different measurement modes for different stages in the electric explosion process of the transducing element: after a certain voltage pulse is applied to the transducing element, the temperature of the bridge region thereof rapidly rises, the bridge body material in the middle region is rapidly melted, and after vaporization occurs, plasma discharge is generated under the action of an electric field; for the bridge region temperature rising stage, a multi-spectrum radiation temperature measurement module is adopted to collect multi-spectrum radiation signals of the bridge region; for the plasma flash stage, a plasma temperature / electron density measurement module based on atomic emission spectrum method is adopted to collect atomic and ion emission spectrum signals; then, the collected optical signals are converted into electric signals through a photoelectric conversion module, the electric signals are collected by a data collection system and uploaded to an upper computer for bridge region temperature and plasma temperature / electron density calculation.

[0008] Preferably, the synchronous trigger module is used for electric explosion driving and can input an electric explosion driving signal into a trigger channel of two groups of measurement channel data collection systems, so that the transducing element explosion and the signal collection of the two modules are simultaneously performed.

[0009] Preferably, the I-V conversion and amplification circuit (5) comprises a power module, a photodiode, an I-V conversion circuit module and a secondary amplification circuit module, an adjustable potentiometer is adopted as a feedback resistor of the amplification part, the dynamic adjustment of an amplification multiple can be realized, a more appropriate sensitivity can be obtained, and high-speed collection of weak spectral signals can be realized.

[0010] Preferably, the calibration process of the joint diagnosis is as follows:

[0011] 1. temperature-voltage calibration is performed on the bridge region temperature measurement module; the optical fiber probe of the multi-spectrum radiation temperature measurement system is aligned with the window of a high-temperature black body furnace, a calibration point is set every 50K between 750K and 1350K, the voltage values of the six channels corresponding to each temperature point are recorded, the least square method is used to fit the calibration data of each channel, and finally, a temperature-voltage calibration curve is obtained;

[0012] 2. The light intensity-voltage calibration of the plasma temperature / electron density measurement module is performed; three spectrum lines corresponding to the wavelength of the light emitting diode are used as the light power adjustable pulse light source, the light energy generated by the light emitting diode is coupled to the optical fiber, the intensity of the tail end of the optical fiber is directly obtained by connecting the optical fiber to the spectrometer, then the tail end of the optical fiber is connected to the detector, and the voltage value is measured to realize the light intensity-voltage calibration.

[0013] Preferably, the multi-spectrum radiation temperature measurement module establishes a target function and a constraint condition of multi-channel true temperature solving according to a multi-spectrum radiation theoretical model, and performs true temperature inversion by using an optimization function for solving a constraint optimization problem. The method does not need to assume that the emissivity and the true temperature or the wavelength have a certain relationship, but converts the multi-spectrum true temperature inversion problem into an optimization problem for solving.

[0014] Compared with the prior art, the present application has the following beneficial effects:

[0015] The problems of low time resolution, small temperature measurement range, high cost, low integration of test instruments, and difficulty in joint measurement (the measurement of each characteristic parameter must be tested separately) of the existing micro-explosive bridge zone temperature and plasma characteristic parameter test device can be solved.

[0016] The present application is characterized in that the radiation / emission spectrum characteristics of the bridge zone temperature rise, plasma generation and explosive initiation of the transducer element process are combined with the multi-spectrum radiation temperature measurement technology and the atomic emission spectrum temperature measurement technology, so that the high time resolution and wide range synchronous measurement of the bridge zone temperature and the plasma temperature / electron density of the whole process of the transducer element can be realized.

[0017] The measurement system realizes full fiberization, simple structure and low cost, and uses the spectrum method to realize high-speed synchronous measurement of the bridge zone temperature rise process and the plasma temperature / electron density, so that the system has high synchronization, high precision and wide applicability.

[0018] The multi-spectrum radiation temperature measurement module uses an optimization function algorithm, does not need to input the brightness temperature, and saves the error caused by the brightness temperature calibration. The algorithm does not need to assume that the emissivity and the true temperature or the wavelength have a certain relationship, but converts the multi-spectrum data into an optimization problem for processing. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 It is a schematic diagram of the overall structure of the test device of the present application;

[0020] Figure 2 It is a schematic diagram of the 9-18VDC to 5VDC power supply circuit module of the present application;

[0021] Figure 3 It is a schematic diagram of the 5VDC to-5VDC power supply circuit module of the present application;

[0022] Figure 4 Schematic diagram of the IV conversion amplifier circuit of the present invention;

[0023] Figure 5 This is a schematic diagram of the temperature-voltage calibration method for the bridge area temperature measurement module of the present invention;

[0024] Figure 6 Schematic diagram of the light intensity-voltage calibration method for the plasma temperature and density measurement module of the present invention;

[0025] Figure 7 This is the flow chart of the interior point method solution of the present invention.

[0026] In the figure: 1. Fiber optic collimator; 2. 1-to-6 splitting optical fiber; 3. Filter loader; 4. Photodiode; 5. IV conversion amplifier circuit; 6. Multi-channel data acquisition card; 7. PC; 8. 1-to-3 splitting optical fiber; 9. Photodetector; 10. Oscilloscope; 11. Synchronous trigger circuit; 12. Digital power supply. DETAILED DESCRIPTION

[0027] In order to make the technical means, creative features, objectives and effects achieved by the present invention easier to understand, the present invention is further described below in conjunction with specific implementation methods.

[0028] When a certain voltage / current pulse is applied to the two electrodes of the transducer, the temperature of the bridge material rises rapidly due to Joule heating, and the bridge material in the middle region quickly melts, but this process does not generate plasma. Multispectral radiation thermometry uses radiation signals from multiple wavelength channels of an object to calculate the object's temperature based on the intensity of the radiation spectral lines. Therefore, multispectral radiation thermometry can be used to measure the temperature changes in the bridge area in this process.

[0029] According to the Wien formula and the basic definition of brightness temperature, the wavelength of the i-th measurement channel of the multi-spectral pyrometer is λ i , Zhenwen T The spectral radiance is L λi (T) , with a certain temperature T i Blackbody spectral radiation brightness L λib (T i ) When equal, there is

[0030] (1)

[0031] in

[0032]

[0033]

[0034] wherein T T is the true temperature of the object to be measured; T i T is the brightness temperature of the i-th channel; λ i λi is the center wavelength of each channel; ε λi (T) is the spectral emissivity of the object to be measured at temperature T, and c1 and c2 are radiation constants.

[0035] According to the basic theory of radiation thermometry, when c 2 / λ i T>>1 The Wien formula can be used to approximate calculation, and thus the following can be obtained:

[0036] (2)

[0037] Further arrangement can obtain:

[0038] (3)

[0039] Therefore, the true temperature of each measurement channel can be expressed as:

[0040] (4)

[0041] As the temperature of the bridge region continues to rise, the bridge region material vaporizes, the micro-explosive device generates plasma discharge and is accompanied by a strong light signal. At this time, the generation mechanism of the light signal is the atomic emission spectrum theory.

[0042] According to the atomic emission spectrum theory, low-energy level atoms or ions will be excited to high-energy levels after being heated. According to the Boltzmann formula under thermodynamic equilibrium, the atomic concentration of the excited state is:

[0043] (5)

[0044] wherein N i N is the number of atoms in unit volume in the excited state, N 0 N0 is the number of atoms in unit volume in the ground state, g i and g 0 g1 and g0 are the statistical weights of the excited state and the ground state, respectively, and the statistical weight is a constant related to the degeneracy of the energy level, E i E is the energy level (excitation potential) of the excited state i k ​is the Boltzmann constant, T is the excitation temperature.

[0045] Because the excited atom or ion at a high energy level is very unstable, it will transition to a low energy level or ground state in a very short time and radiate energy in the form of light, which satisfies the equation:

[0046] E m -E n =hv mn (6)

[0047] where E m is the energy of the high energy level, E n is the energy of the low energy level, v mn is the frequency of the radiation spectrum produced by the transition, h is the Planck constant.

[0048] Because the atom in the excited state returns to the ground state in different ways, the emitted spectral lines have various possibilities. Assuming that an atom is excited to a high energy level, when it returns to a low energy level and produces radiation, the transition of this excited atom between energy levels will have various possibilities; the size of the possibility of transition between different energy levels is called the transition probability (or emission probability). Let i and m the transition probability between energy levels is A im , then the energy difference between the two energy levels is: i and m

[0049] (7)

[0050] The spectral line intensity (I) produced by the transition is: I im

[0051] (8)

[0052] Summarizing the above formulas, the spectral line intensity formula is:

[0053] (9)

[0054] where I im is the spectral line intensity produced by the transition between energy levels i and m N 0 is the number of atoms in a unit volume in the ground state,​​​A im For i With m The transition probability between two energy levels, h is the Planck constant, v im is the frequency of the spectral line produced by the transition.

[0055] For two spectral lines of the same atom, the intensity ratio of the two spectral lines should satisfy the following formula:

[0056] (10)

[0057] In the formula I λ1 and I λ2 are the intensities of the two spectral lines with wavelengths λ 1 and λ 2 respectively, A 1 and A 2 are the transition probabilities of the two spectral lines respectively, g 1 and g 2 are the statistical weights of the excited states of the two spectral lines respectively, E 1 and E 2 are the energies of the excited states of the two spectral lines respectively, k is the Boltzmann constant, T is the excitation temperature.

[0058] From formula (10), we have:

[0059] (11)

[0060] For two known spectral lines A 1 , A 2 , g 1 , g 2 , E 1 , E 2 and k are all known spectral constants, so as long as the spectral line intensities I λ1 and I λ2 of the two spectral lines are measured, the plasma temperatureT .

[0061] On this basis, according to Boltzmann-Saha equation, the relationship between the electron density of the plasma and the spectral line intensity can be obtained as:

[0062] (12)

[0063] In the formula, I 1 and I 2 are the intensities of two spectral lines with wavelengths λ 1 and λ 2, for the plasma temperature measurement system, two atomic spectral lines, and for the plasma electron density measurement system, ion and atomic spectral lines; A 1 and A 2 are the transition probabilities of the two spectral lines, respectively; g 1 and g 2 are the statistical weights of the excited states of the two spectral lines, respectively; E 1 and E 2 are the excited state energies of the two spectral lines, respectively; k is the Boltzmann constant; h is the Planck constant; T is the excitation temperature; n e is the electron density of the plasma; E ion is the first ionization potential of the atom, for the two known spectral lines, A 1, A 2, g 1, g 2, E 1, E 2 and k are known spectral constants, so as long as the spectral line intensities I 1 and I 2 of the two spectral lines are measured, the plasma electron density n e .

[0064] Taking SCB electric explosion as an example, there are Si atomic emission spectral lines and ion emission spectral lines in the plasma discharge flash spectrum during the SCB transducer element explosion process. The atomic emission spectrum method can calculate the transient temperature and electron density of the plasma according to the intensities of two atomic emission spectra and one ion emission spectrum of the same element.

[0065] Referring to Figure 1The embodiment provides a full-process bridge area temperature and plasma characteristic parameter combined measurement system of a transducing element, which is composed of a multi-spectrum radiation temperature measurement module, an atomic emission spectrum measurement module and a synchronous triggering module. The multi-spectrum radiation temperature measurement module is used for measuring the bridge area temperature in the electric explosion process, the atomic emission spectrum measurement module is used for measuring the temperature and electron density of the plasma, and the synchronous triggering module is used for sending a triggering signal to the micro explosive device, the multi-spectrum radiation temperature measurement module and the atomic emission spectrum measurement module, so that the two module spectrum signals are synchronously collected. The specific description of the system is as follows:

[0066] (1) The multi-spectrum radiation temperature measurement channel is used for measuring the change of the bridge area temperature in the initiation process of the transducing element. The channel receives the infrared spectrum signal radiated in the semiconductor bridge temperature rising process by using one optical fiber probe, and divides the optical signal into six paths by 1 / 6 beam splitting optical fiber; the tail ends of the six optical fibers are connected into the photodiodes clamped with bandpass filters, the center wavelengths of the bandpass filters are λ1, λ2, λ3, λ4, λ5 and λ6 respectively; the photodiode converts the received optical signal into weak photocurrent; the current signal is converted into a voltage signal that can be collected by the data acquisition card through an I-V conversion amplification circuit, and the voltage signal is converted into a digital signal by the multi-channel digital acquisition card and sent to the PC end. The analog bandwidth of the photodiode and the I-V conversion amplification circuit is >100KHz, which meets the requirement of the time resolution of the measurement channel in the technical index.

[0067] (2) The atomic emission spectrum measurement channel is used for measuring the plasma temperature / electron density in the plasma stage in the process of the transducing element. Taking the semiconductor bridge (SCB) explosive device as an example, the channel receives the atomic emission spectrum signal emitted by the plasma discharge flash, and divides the optical signal into three paths by 1 / 3 beam splitting optical fiber; the tail ends of the three optical fibers are connected into the photodetectors clamped with bandpass filters, the center wavelengths of the bandpass filters are the wavelengths corresponding to two atomic emission spectrum lines and one ion emission spectrum line of the same element in the transducing element; the detector converts the received variable light intensity signal into an electrical signal and transmits it to the oscilloscope, and then sends the collected light intensity data to the PC end. The analog bandwidth of the photodetector used in the test channel is as high as 100MHz, the analog bandwidth of the oscilloscope is as high as 1GHz, and the sampling rate is 6.25GSa / s, so that the time resolution of the channel in the technical index is ≯50ns.

[0068] (3) Synchronous trigger module is used to send trigger signal to the transducer, multispectral radiation thermometry module and atomic emission spectrum measurement module, to realize synchronous acquisition of spectral signals of two modules. This module connects two groups of wires of the micro-explosive device ignition voltage signal in parallel as trigger signal lines, and connects them into the trigger channel of the data acquisition card of the bridge temperature measurement module and the oscilloscope trigger channel of the plasma temperature / electron density measurement module respectively. When the voltage is applied to the transducer, the oscilloscope and the acquisition card realize synchronous triggering.

[0069] In the bridge temperature measurement module based on multispectral radiation thermometry method, a set of 6-channel I-V conversion amplification circuit is designed in the processing step of converting the radiation light signal into an electric signal. The photoelectric conversion circuit includes a power module, a photodiode, an I-V conversion circuit module, and a secondary amplification circuit module. The specific design method is as follows:

[0070] ① Power module

[0071] The power circuit is the premise of the normal work of the whole photoelectric conversion circuit, provides the power required for the whole measurement part during normal work, and plays a crucial role in the stability and reliability of the whole device. The main voltages used in this part of the circuit are +5V and -5V. Since ME7660 is used as a single power supply +5V in the circuit, AD822 and NE5532 chips are powered by ±5V, considering that too many external power sources will directly interfere with the analog circuit signals in this part, which will ultimately affect the accuracy of the measurement results, therefore, the 9-18V external power source is converted into corresponding +5V and -5V power supply for the above chips.

[0072] The 9-18V to 5V is selected from the gold-rising DC-DC power module VRB1205ZP-6WR3, which has an input voltage of 9-18V, an output of 5V / 1.2A, a conventional isolation voltage of 1500VDC, anti-reverse connection, TVS surge protection, input under-voltage protection, and output short-circuit, over-current, and over-voltage protection. The output 5V voltage is used to power the ME7660 and AD822 chips. The circuit diagram is shown in Figure 2 .

[0073] ME7660 chip is used as a -5V voltage conversion chip. This chip is a DC voltage reverse special integrated circuit chip with a wide input voltage range of +1.5V to +10V, and can convert the input voltage to -1.5V to -10V output. As shown in Figure 3 , the peripheral components use less, only two electrolytic capacitors are needed to realize the conversion between positive voltage and negative voltage; it is often used in situations with small input current, and the output voltage has high precision when outputting corresponding negative voltage, and the power consumption is low when used.

[0074] ②I-V conversion amplifier circuit module

[0075] The IV conversion amplifier circuit is the core circuit of the circuit module. This part of the circuit mainly includes the photodiode circuit, IV conversion circuit, first-stage amplifier circuit (inverting amplifier), and second-stage amplifier circuit (non-inverting amplifier). Its main function is to convert the current signal excited by the photodiode into a voltage signal and amplify it, so that it can be directly collected by the acquisition card. It also has high sensitivity. The circuit design principle diagram of the IV conversion amplifier circuit is as follows Figure 4 As shown:

[0076] The photodiode is equivalent to the photodiode and its parasitic resistance C D The photodiodes selected are the LSIPD-1S and LSSPD-0.5 InGaAs photodiodes produced by Beijing Minguang Technology Co., Ltd. The AD825 is used as the transimpedance amplifier in this circuit. This op amp can improve the overall resolution and accuracy of the system.

[0077] To meet the requirement of measuring microsecond-level temperature changes, the circuit needs to have a -3dB bandwidth of no less than 100kHz. The maximum value of the feedback resistor R5 can be calculated using equation (13) (the following calculation uses LSSPD-0.5 as an example):

[0078] (13)

[0079] (14)

[0080] Where GBP is the gain bandwidth product of AD825, which is 41MHz; C S is the parasitic capacitance of the front end of the op amp, C D is the parasitic capacitance of the photoelectric tube, C CM is the parasitic common mode capacitance of the chip input, C DIFF C is the parasitic differential capacitance of the chip input. It can be calculated by consulting the component manual. S is 50.55pF. Substituting it into formula (13), the maximum value of R5 is 653KΩ. In order to ensure a sufficiently high bandwidth, R F Set to 100K.

[0081] In order to prevent the operational amplifier from self-excitation, it is necessary to set the feedback capacitor C7 for compensation. The minimum value of C7 can be calculated by the following formula:

[0082] (15)

[0083] C S= 50.55pF, R5 = 100K, GBP = 41M, substituting into the above formula, C F The minimum value is about 6.7pF, in order to ensure the system stability, C F is set to 10pF.

[0084] ③The first and second amplification circuit modules

[0085] Since the voltage signal obtained through the I-V conversion amplification circuit is still weak and not easy to collect, in order to improve the signal-to-noise ratio and enable the subsequent collection part to accurately collect the voltage signal, a first and second amplification circuit is designed to proportionally amplify the useful voltage signal and make it more resistant to interference.

[0086] In the design of the first amplification circuit, the operational amplifier NE5532 is selected. Since the voltage signal converted by the previous stage of transimpedance amplification circuit is a negative signal, it is necessary to inversely amplify the signal, which can not only convert the signal to a positive signal, but also perform the method. In this circuit, R2 is the input resistance, R3 is the feedback resistance R F The input-output voltage relationship of this circuit is:

[0087] (16)

[0088] In the design of the second amplification circuit, the operational amplifier is also selected as NE5532. R5 is the input resistance, and R8 is the feedback resistance R F The input-output voltage relationship of this circuit is:

[0089] (17)

[0090] That is, the amplification factor is 1+R8 / R7.

[0091] After the system is established, the bridge temperature measurement module needs to be calibrated for temperature-voltage, and the plasma temperature / electron density measurement module needs to be calibrated for light intensity-voltage.

[0092] ①Temperature-voltage calibration of the bridge temperature measurement module

[0093] The schematic diagram of temperature-voltage calibration is shown in Figure 5 The optical fiber probe of the multi-spectral radiation temperature measurement system is aligned with the high-temperature blackbody furnace window, and a calibration point is set every 50K between 750K and 1350K, and the voltage values of the six channels corresponding to each temperature point are recorded. The calibration data of each channel is fitted using the least squares method, and finally the temperature-voltage calibration curve is obtained.

[0094] The steps of the temperature calibration experiment using the high-temperature blackbody furnace are as follows:

[0095] a. First, close the lens of the multi-spectral pyrometer and collect voltage data from each channel 128 times. Remove the extreme values ​​of each data set and take the average value as the zero-point voltage of the channel.

[0096] b. Then open the lens of the multi-spectral pyrometer and adjust the focus precisely so that the blackbody window fills the entire field of view. Gradually increase the blackbody temperature by about 50K.

[0097] c. After the high-temperature blackbody temperature stabilizes, calibrate it. That is, collect the voltage data of each channel at that temperature 10 times, remove the extreme values ​​of each set of data and take the average value, and save the obtained voltage average value and the corresponding temperature record.

[0098] d. After obtaining the voltage value of each channel at each calibration temperature, use the least squares method to fit the temperature information and voltage information. Assuming that the temperature T With voltage V The following relationship exists:

[0099]

[0100] In the formula V i For the i The voltage value recorded under each channel, T is the temperature of each calibration point, and A, B, and C are fitting coefficients.

[0101] ②Light intensity-voltage calibration of plasma temperature / electron density measurement module

[0102] The C12702-11 APD module used in the plasma temperature and density measurement channel has a low-band cutoff frequency of 0.004 MHz and a high-band cutoff frequency of 100 MHz. A pulsed light source with adjustable optical power was designed, utilizing a light-emitting diode (LED) with wavelengths corresponding to two atomic and ion lines. The generated light energy was coupled into an optical fiber, and the fiber's tail end was connected to a spectrometer to directly obtain the intensity. This was then connected to a detector, where the voltage was measured for calibration. The LED was powered by a pulsed power supply with a pulse frequency of ≥3 kHz. The specific implementation method involves using a single-chip microcomputer to generate the pulse signal and a MOS tube circuit to achieve adjustable pulse amplitude. This results in adjustable luminous intensity amplitude, and an attenuator was used to achieve adjustable weak light intensity.

[0103] The designed pulse generating circuit is welded with a light-emitting diode, and the light-emitting diode is coupled to a straight-through optical fiber. After the light energy passes through the straight-through optical fiber and is filtered, the tail end of the optical fiber is connected to a spectrometer to obtain its light intensity, and then the tail end of the optical fiber is connected to a detector to measure its voltage value. After that, the variable resistor is adjusted to adjust the light intensity, and the light intensity and the detector output voltage value are continuously measured to finally obtain the voltage-light intensity curve. The schematic diagram of the method is shown in FIG.Figure 6 shown.

[0104] In the multi-spectral radiation temperature measurement module, the bridge area temperature at the same moment is unique. The true temperature calculated by different wavelength spectral channels should be equal to the actual temperature of the target to be measured. That is, the deviation of the calculated true temperature under different spectral channels should be zero, which can be expressed by the following formula:

[0105] (18)

[0106] in is the calculated true temperature under the i-th spectral channel, Calculate the average true temperature for each channel.

[0107] The above formula can be expressed in the form of constrained optimization

[0108] (19)

[0109] make , , Substituting into formula (4) we can get the calculated true temperature of each channel:

[0110] (20)

[0111] (twenty one)

[0112] Combining formula (4) and formula (19-21), we can get:

[0113] (twenty two)

[0114] Since the spectral emissivity ranges between 0 and 1.0, 0≤ ≤1, so the constraint is <0, the constrained optimization problem of the optimization algorithm based on the reference temperature can be defined as

[0115] (twenty three)

[0116] The true temperature inversion algorithm is based on the optimization function. The optimization function used is the fmincon function in MATLAB. The fmincon function is a function that solves the extreme value problem of multivariate functions containing constraints. fmincon is a universal optimization solver that can be used to solve the following constrained optimization problems:

[0117] (twenty four)

[0118] In the formula f ( x ) is the objective function, is a linear constraint: where A and Aeq are the coefficient matrices of linear inequality constraints and equality constraints respectively, b and beq is the constraint vector; ub and lb are the upper and lower bounds of the variables respectively. This function contains four different algorithms, namely interior point algorithm, sequential quadratic programming algorithm, effective set algorithm and trust region reflective algorithm. The basic idea of ​​this function is to use the first-order derivative information of the objective function and the constraint function, starting from the given initial point, and iterating along the direction of the objective function descent under the condition of satisfying the constraints, and finally converge to the local optimal solution. The solution of this algorithm uses the interior point function method to solve it. The flowchart of the interior point method solution is as follows Figure 7 shown.

[0119] It should be noted that the technical indicators that can be achieved by the present invention are:

[0120] (1) Time resolution: plasma temperature and density measurement ≯50ns, bridge zone temperature measurement ≯10μs;

[0121] (2) Temperature measurement range: The bridge zone temperature measurement range is 750-1300K, and the plasma temperature measurement range is 2000-4000K;

[0122] (3) Plasma density measurement range: 10 12 ~10 15 cm -3 ;

[0123] In order to achieve the above object, the technical solution of the present invention is as follows:

[0124] like Figure 1 As shown in the figure, the combined measurement system consists of three parts: a bridge temperature measurement module based on multi-spectral radiation thermometry, a plasma temperature / electron density measurement module based on atomic emission spectroscopy, and a synchronous trigger module.

[0125] (1) Multi-spectral radiation temperature measurement channel is used for measuring the temperature change of bridge area in the process of initiating the transducer element. The channel uses a fiber probe to receive the infrared spectrum signal radiated by the semiconductor bridge during the temperature rising process, and divides the light signal into 6 paths by a 1 / 6 beam splitter fiber; the tail ends of the 6 fibers are connected to the photodiodes clamped with band-pass filters, and the center wavelengths of the band-pass filters are λ1, λ2, λ3, λ4, λ5 and λ6 respectively; the photodiode converts the received light signal into a weak photocurrent; the current signal is converted into a voltage signal that can be collected by the data acquisition card through the I-V conversion amplification circuit, and the voltage signal is converted from an analog signal to a digital signal by a multi-channel digital acquisition card and sent to the PC end. The analog bandwidth of the photodiode and the I-V conversion amplification circuit is >100KHz, which meets the requirement of the time resolution of the measurement channel in the technical index ≯10μs.

[0126] (2) Atomic emission spectrum measurement channel is used for measuring the plasma temperature / electron density measurement in the process of generating plasma in the transducer element. Taking the semiconductor bridge (SCB) initiating explosive device as an example, the channel receives the atomic emission spectrum signal emitted by the plasma discharge flash, and divides the light signal into 3 paths by a 1 / 3 beam splitter fiber; the tail ends of the 3 fibers are connected to the photodetectors clamped with band-pass filters, and the center wavelengths of the band-pass filters are the wavelengths corresponding to two atomic emission spectrum lines and one ion emission spectrum line of the same element in the transducer element; the detector converts the received varying light intensity signal into an electrical signal and transmits it to the oscilloscope, and then sends the collected light intensity data to the PC end. The analog bandwidth of the photodetector used in the test channel is as high as 100MHz, the analog bandwidth of the oscilloscope is as high as 1GHz, and the sampling rate is 6.25GSa / s, which can realize the time resolution of the channel ≯50ns in the technical index.

[0127] The above shows and describes the basic principles and main features of the present application and the advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above-mentioned embodiments, and the above-mentioned embodiments and descriptions in the specification are only to illustrate the principles of the present application, and various changes and improvements can be made without departing from the spirit and scope of the present application, and these changes and improvements all fall within the scope of the claimed present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A combined diagnostic method for parameters of the entire process of electric explosion of a transducer element, characterized by: The joint diagnosis method is based on a transducing element electric explosion whole process parameter joint diagnosis device, the joint diagnosis method adopts different measurement methods for different stages in the transducing element electric explosion process, after a certain voltage pulse is applied to the transducing element, the temperature of the bridge region rapidly rises, the bridge body material in the middle region rapidly melts, and after vaporization occurs, plasma discharge occurs under the action of the electric field; for the bridge region temperature rise stage, a multi-spectral radiation temperature measurement module is used to collect the multi-spectral radiation signals of the bridge region; for the plasma flash stage, an atomic emission spectroscopy-based plasma temperature / electron density measurement module is used to collect atomic and ion emission spectrum signals; then the collected optical signals are converted into electrical signals by an optoelectronic conversion module, collected by a data acquisition system and uploaded to a host computer for bridge region temperature and plasma temperature / electron density calculation; the device is composed of a bridge region temperature measurement module based on a multi-spectral radiation temperature measurement method, a plasma temperature / electron density measurement module based on an atomic emission spectroscopy method and a synchronous triggering module; wherein the bridge region temperature measurement module based on the multi-spectral radiation temperature measurement method includes a fiber collimator (1), a 1 / 6 split beam optical fiber (2), a filter loader (3) and filters, a photodiode (4) and an I-V conversion amplification circuit (5), a multi-channel data acquisition card (6) and a PC (7); the plasma temperature / electron density measurement module based on the atomic emission spectroscopy method includes a fiber collimator (1), a 1 / 3 split beam optical fiber (8), a photodetector (9), an oscilloscope (10) and a PC (7); the synchronous triggering module includes a synchronous triggering circuit (11) and a digital power supply (12); the synchronous triggering module provides trigger signals for the transducing element initiation power supply, the multi-channel data acquisition card in the bridge region temperature measurement module and the oscilloscope in the plasma temperature / electron density measurement module, realizing the synchronous initiation of the transducing element and the synchronous collection of the bridge region radiation spectrum signals and the plasma emission spectrum signals.

2. The method according to claim 1, wherein the method comprises the following steps: The multi-channel I-V conversion amplification circuit includes a power module, a photodiode, an I-V conversion circuit module and a secondary amplification circuit module, the feedback resistor of the amplification part adopts an adjustable potentiometer, the dynamic adjustment of the amplification factor can be realized, and then the appropriate sensitivity can be obtained, realizing the high-speed collection of weak spectral signals.

3. The method according to claim 1, wherein the method comprises the following steps: The calibration process of the joint diagnosis is as follows: ①, temperature-voltage calibration of the bridge region temperature measurement module; aim the fiber probe of the multi-spectral radiation temperature measurement system at the window of the high-temperature blackbody furnace, set a calibration point every 50K between 750K and 1350K, and record the voltage values of the six channels corresponding to each temperature point, use the least squares method to fit the calibration data of each channel, and finally obtain the temperature-voltage calibration curve; ②, light intensity-voltage calibration of the plasma temperature / electron density measurement module; use three spectral line corresponding wavelength light emitting diodes as light power adjustable pulse light source, couple the light energy generated thereby to the optical fiber, use the tail end of the optical fiber to access the spectrometer to directly obtain the intensity, then access the probe at the tail end of the optical fiber, measure the voltage value, and realize light intensity-voltage calibration.

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