Optical device and manufacturing method thereof

Abstract

Optical devices and methods of making the same are described in which a glass interposer is bonded to the optical device. In some embodiments, a method includes forming a first optical package, and then bonding the first optical package to a first glass interposer. The first glass interposer may then be connected to the second interposer.

Description

Technical Field

[0001] Embodiments of the present application relate to optical devices and methods for manufacturing the same. Background Art

[0002] Electrical signaling and processing is a technology used for signal transmission and processing. In recent years, optical signaling and processing has been used in an increasing number of applications, especially due to the use of optical fiber related applications for signal transmission.

[0003] Optical signals and processing are often combined with electrical signals and processing to provide comprehensive applications. For example, optical fibers can be used for long-range signal transmission, and electrical signals can be used for short-range signal transmission and processing and control. Therefore, devices integrating long-range optical components and short-range electronic components are formed for conversion between optical and electrical signals, as well as processing of optical and electrical signals. Therefore, a package can include an optical (photonic) die with optical devices, and an electronic die with electronic devices. Summary of the invention

[0004] According to one aspect of an embodiment of the present application, a method for manufacturing an optical device is provided, the method comprising: forming a first optical package; and bonding the first optical package to a first glass interposer.

[0005] According to another aspect of an embodiment of the present application, a method for manufacturing an optical device is provided, the method comprising: forming a through hole through a glass material passing through an intermediate layer; forming a first redistribution layer above the glass material, the first redistribution layer comprising a conductive component and an optical component; bonding a first optical device to the first redistribution layer; and bonding a laser die to the first redistribution layer.

[0006] According to another aspect of an embodiment of the present application, an optical device is provided, including: a first intermediary layer including a through-hole extending through a first glass material; and a first optical device bonded to the first intermediary layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] When read in conjunction with the accompanying drawings, various aspects of the present invention can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0008] Figure 1-Figure 9 shows the formation of a first optical package according to some embodiments;

[0009] Fig.10 shows a glass interposer to be connected to a first optical package according to some embodiments;

[0010] Fig.11 illustrates bonding of a first optical package to a glass interposer according to some embodiments;

[0011] Fig.12 illustrates the connection of a fiber array unit assembly to a first optical package according to some embodiments;

[0012] Fig.13 illustrates an optical path for an optical signal according to some embodiments;

[0013] Figure 14A-14B illustrates the use of an external connector according to some embodiments;

[0014] Fig.15 illustrates an optical path for an optical signal with an external connector according to some embodiments;

[0015] Fig.16 shows the bonding of a second substrate to glass according to some embodiments;

[0016] Fig.17 illustrates an optical path for an optical signal with a second substrate according to some embodiments;

[0017] Figure 18A-18B A multi-module structure with a second substrate is shown in accordance with some embodiments. DETAILED DESCRIPTION

[0018] The following disclosure provides many different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements are described below to simplify the present invention. Of course, these are merely examples and are not intended to limit the present invention. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly in contact with each other, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numbers and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0019] Furthermore, for ease of description, spatially relative terms such as "under," "beneath," "lower," "over," "upper," etc. may be used herein to easily describe the relationship of one element or component to another (or additional) elements or components as shown in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0020] Embodiments will now be discussed with respect to certain embodiments in which a glass interposer is used to interconnect a compact universal photonic engine (COUPE). However, the embodiments presented herein are intended to be illustrative and are not intended to limit the embodiments to the precise description discussed. Rather, the embodiments discussed may be incorporated into a wide variety of implementations, such as silicon photonics in general or 3-D ICs with photonic applications, and all such implementations are fully intended to be included within the scope of the embodiments.

[0021] Reference now Figure 1 , which shows an optical interposer 100 according to some embodiments (see Figure 5 ) is the initial structure. Figure 1 In the particular embodiment shown in FIG. 1 , the optical interposer 100 is a photonic integrated circuit (PIC) and at this stage comprises a first substrate 101, a first insulator layer 103, and a first active layer 201 ( Figure 1 is not shown separately, but will be discussed below. Figure 2 In one embodiment, at the beginning of the manufacturing process of the optical interposer 100, the first substrate 101, the first insulator layer 103, and the material layer 105 of the first active layer 201 for the first optical component 203 may together constitute part of a silicon-on-insulator (SOI) substrate. First looking at the first substrate 101, the first substrate 101 may be a semiconductor material such as silicon or germanium, a dielectric material such as glass, or any other suitable material that allows structural support for overlying devices.

[0022] The first insulator layer 103 can be a dielectric layer that separates the first substrate 101 from the overlying first active layer 201, and in some embodiments, can additionally serve as part of a cladding material surrounding a subsequently fabricated first optical component 203 (discussed further below). In one embodiment, the first insulator layer 103 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, etc., formed using methods such as implantation (e.g., forming a buried oxide (BOX) layer), or can otherwise be deposited onto the first substrate 101 using deposition methods such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. However, any suitable material and manufacturing method can be used.

[0023] The material 105 for the first active layer 201 is initially (before patterning) a conformal layer of the material of the first active layer 201 that will be used to begin fabricating the first optical component 203. In one embodiment, the material 105 for the first active layer 201 can be a semi-transparent material that can be used as a core material for the desired first optical component 203, such as a semiconductor material, such as silicon, germanium, silicon germanium, combinations of these, etc., while in other embodiments, the material 105 for the first active layer 201 can be a dielectric material, such as silicon nitride, etc., although in other embodiments, the material 105 for the first active layer 201 can be a III-V material, a lithium niobate material, or a polymer. In embodiments in which the material 105 for the first active layer 201 is deposited, the material 105 for the first active layer 201 can be deposited using methods such as epitaxial growth, chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. In other embodiments where an implantation method is used to form the first insulator layer 103, the material 105 of the first active layer 201 may initially be part of the first substrate 101 prior to the implantation process used to form the first insulator layer 103. However, any suitable material and manufacturing method may be used to form the material 105 of the first active layer 201.

[0024] Figure 2 It is shown that once the material 105 for the first active layer 201 is ready, the material 105 for the first active layer 201 is used to manufacture the first optical component 203 for the first active layer 201. In an embodiment, the first optical component 203 of the first active layer 201 may include components such as optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), couplers (e.g., grating couplers, edge couplers of narrowed waveguides having a width between about 1 nm and about 200 nm, etc.), directional couplers, optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optical converters, lasers, combinations of these, etc. However, any suitable first optical component 203 may be used.

[0025] To begin forming the first active layer 201 of the first optical component 203 from an initial material, the material 105 for the first active layer 201 may be patterned into a desired shape of the first active layer 201 for the first optical component 203. In one embodiment, the material 105 for the first active layer 201 may be patterned using, for example, one or more photolithography masks and etching processes. However, any suitable method may be used to pattern the material 105 for the first active layer 201. For some first optical components 203, such as waveguides or edge couplers, the patterning process may be all or at least a majority of the fabrication used to form these first optical components 203.

[0026] Figure 3 For those components that use further manufacturing processes, such as Mach-Zehnder silicon photonic switches using resistive heating elements, additional processing can be performed before or after patterning of the material used for the first active layer 201. For example, an implantation process, additional deposition and patterning processes for different materials (e.g., resistive heating elements, III-V materials for converters), a combination of all of these processes, etc., can be used to help further manufacture various desired first optical components 203. In certain embodiments, as Figure 3 As specifically shown in FIG. 1 , in some embodiments, epitaxial deposition of semiconductor material 301 such as germanium (e.g., for electrical / optical signal modulation and conversion) may be performed on patterned portions of material 105 of first active layer 201. In such embodiments, semiconductor material 301 may be grown epitaxially to aid in fabrication of photodiodes, for example, for photoelectric converters. All such fabrication processes and all suitable first optical components 203 may be fabricated, and all such combinations are fully intended to be included within the scope of the embodiments.

[0027] Figure 4It is shown that once a single first optical component 203 of the first active layer 201 is formed, a second insulator layer 401 can be deposited to cover the first optical component 203 and provide additional cladding material. In one embodiment, the second insulator layer 401 can be a dielectric layer that separates the single components of the first active layer 201 from each other and from the overlying structure, and can additionally serve as another part of the cladding material surrounding the first optical component 203. In one embodiment, the second insulator layer 401 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, etc. formed using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. Once the material of the second insulator layer 401 is deposited, the material can be flattened using, for example, a chemical mechanical polishing process to flatten the top surface of the second insulator layer 401 (in an embodiment in which the second insulator layer 401 is intended to completely cover the first optical component 203), or otherwise flatten the top surface of the second insulator layer 401 and the first optical component 203. However, any suitable materials and manufacturing methods may be used.

[0028] Figure 5 4. It is shown that once the first optical component 203 of the first active layer 201 is manufactured and the second insulator layer 401 is formed, a first metallization layer 501 is formed to electrically connect the first active layer 201 of the first optical component 203 to the control circuit, to each other, and to subsequently connected devices ( Figure 5 This is not shown, but will be discussed below. Figure 6 In one embodiment, the first metallization layer 501 is formed of alternating layers of dielectric material and conductive material, and can be formed by any suitable process (e.g., deposition, inlay, dual inlay, etc.). In a particular embodiment, there may be multiple metallization layers for interconnecting various first optical components 203, but the exact number of first metallization layers 501 depends on the design of the optical interposer 100.

[0029] In addition, during the manufacture of the first metallization layer 501, one or more second optical components 503 may be formed as part of the first metallization layer 501. In some embodiments, the second optical components 503 of the first metallization layer 501 may include components such as couplers (e.g., edge couplers, grating couplers, etc.) for connecting to external signals, optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optical converters, lasers, combinations of these, etc. However, any suitable optical components may be used for the one or more second optical components 503.

[0030] In one embodiment, the one or more second optical components 503 may be formed by initially depositing a material for the one or more second optical components 503. In one embodiment, the material for the one or more second optical components 503 may be a dielectric material such as silicon nitride, silicon oxide, combinations of these, or a semiconductor material such as silicon deposited using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. However, any suitable material and any suitable deposition method may be used.

[0031] Once the material for the one or more second optical components 503 is deposited or otherwise formed, the material can be patterned into a desired shape for the one or more second optical components 503. In one embodiment, the material of the one or more second optical components 503 can be patterned using, for example, one or more photolithography masks and an etching process. However, the material of the one or more second optical components 503 can be patterned using any suitable method.

[0032] For some of the one or more second optical components 503, such as waveguides or edge couplers, the patterning process can be all or at least a majority of the fabrication used to form these components. In addition, for those components that use further fabrication processes, such as Mach-Zehnder silicon photonic switches using resistive heating elements, additional processing can be performed before or after patterning of the material used for the one or more second optical components 503. For example, an implantation process, additional deposition and patterning processes for different materials, combinations of all of these processes, etc. can be used to help further fabricate various desired one or more second optical components 503. All such fabrication processes and all suitable one or more second optical components 503 can be manufactured, and all such combinations are fully intended to be included within the scope of the embodiments.

[0033] Once the one or more second optical components 503 of the first metallization layer 501 are fabricated, a first bonding layer 505 may be formed over the first metallization layer 501. In one embodiment, the first bonding layer 505 may be used for dielectric-to-dielectric and metal-to-metal bonding. According to some embodiments, the first bonding layer 505 is formed of a first dielectric material 509 such as silicon oxide, silicon nitride, etc. The first dielectric material 509 may be deposited using any suitable method such as CVD, high density plasma chemical vapor deposition (HDPCVD), PVD, atomic layer deposition (ALD), etc. However, any suitable material and deposition process may be used.

[0034] Once the first dielectric material 509 is formed, a first opening can be formed in the first dielectric material 509 to expose the conductive portion of the lower layer in preparation for forming the first bonding pad 507 in the first bonding layer 505. Once the first opening is formed in the first dielectric material 509, the first opening can be filled with a seed layer and a metal plate to form the first bonding pad 507 in the first dielectric material 509. The seed layer can be blanket deposited on the top surface of the first dielectric material 509, the exposed conductive portion of the lower layer, and the sidewalls of the opening and the second opening. The seed layer can include a copper layer. Depending on the required material, a process such as sputtering, evaporation, or plasma enhanced chemical vapor deposition (PECVD) can be used to deposit the seed layer. The metal plate can be deposited on the seed layer by a plating process such as electroplating or chemical plating. The metal plate can include copper, copper alloy, etc. The metal plate can be a filling material. A barrier layer (not shown separately) can be blanket deposited on the top surface of the first dielectric material 509 and the sidewalls of the opening and the second opening before the seed layer. The barrier layer may include titanium, titanium nitride, tantalum, tantalum nitride, or the like.

[0035] After the first opening is filled, a planarization process such as CMP is performed to remove the excess portion of the seed layer and the metal plate, thereby forming a first bonding pad 507 in the first bonding layer 505. In some embodiments, a bonding pad via (not shown separately) may also be used to connect the first bonding pad 507 to the underlying conductive portion, and to connect the first bonding pad 507 to the first metallization layer 501 through the underlying conductive portion.

[0036] In addition, the first bonding layer 505 may also include one or more third optical components 511, which are incorporated into the first bonding layer 503. In such an embodiment, prior to the deposition of the first dielectric material 509, the one or more third optical components 511 may be manufactured using similar methods and similar materials as the one or more second optical components 503 (as described above), for example by forming waveguides and other structures at least in part through deposition and patterning processes. However, any suitable structures, materials, and any suitable manufacturing methods may be used.

[0037] Figure 6 The bonding of a first semiconductor device 601 to a first bonding layer 505 of an optical interposer 100 is shown. In some embodiments, the first semiconductor device 601 is an electronic integrated circuit (EIC, e.g., a device without optical devices) and may have a semiconductor substrate 603, an active device layer 605, an overlying interconnect structure 607, a second bonding layer 609, and associated second bonding pads 611. In one embodiment, the semiconductor substrate 603 may be similar to the first substrate 101 (e.g., a semiconductor material such as silicon or silicon germanium), the active device 605 may be a transistor, capacitor, resistor, etc. formed above the semiconductor substrate 603, the interconnect structure 607 may be similar to the first metallization layer 501 (without optical components), the second bonding layer 609 may be similar to the first bonding layer 505, and the second bonding pad 611 may be similar to the first bonding pad 507. However, any suitable device may be used.

[0038] In one embodiment, the first semiconductor device 601 may be configured to work with the optical interposer 100 for the desired functionality. In some embodiments, the first semiconductor device 601 may be a high bandwidth memory (HBM) module, an xPU, a logic die, a 3DIC die, a CPU, a GPU, a SoC die, a MEMS die, a combination of these, etc. Any suitable device having any suitable functionality may be used, and all such devices are fully intended to be included within the scope of the embodiments.

[0039] In one embodiment, dielectric-to-dielectric and metal-to-metal bonding processes can be used to bond the first semiconductor device 601 and the first bonding layer 505. In a specific embodiment using dielectric-to-dielectric and metal-to-metal bonding processes, the process can be started by activating the surface of the second bonding layer 609 and the surface of the first bonding layer 505. As an example, activating the top surface of the first bonding layer 505 and the second bonding layer 609 can include dry processing, wet processing, plasma processing, exposure to inert gas plasma, exposure to H2, exposure to N2, exposure to O2, combinations thereof, etc. In an embodiment using wet processing, for example, RCA cleaning can be used. In another embodiment, the activation process can include other types of processing. The activation process helps the bonding of the first bonding layer 505 and the second bonding layer 609.

[0040] After the activation process, the optical interposer 100 and the first semiconductor device 601 may be cleaned using, for example, a chemical rinse, and then the first semiconductor device 601 may be aligned with the optical interposer 100 and placed in physical contact with the optical interposer 100. The optical interposer 100 and the first semiconductor device 601 may then be subjected to heat treatment and contact pressure to bond the optical interposer 100. For example, the optical interposer 100 and the first semiconductor device 601 may be subjected to a pressure of about 200 kPa or less and a temperature between about 25° C. and about 250° C. to fuse the optical interposer 100 and the first semiconductor device 601. The optical interposer 100 and the first semiconductor device 601 may then be subjected to a temperature equal to or higher than the eutectic point of the material used for the first bonding pad 507 and the second bonding pad 611, for example, between about 150° C. and about 650° C. to fuse the metals. In this manner, the optical interposer 100 and the first semiconductor device 601 form a dielectric-to-dielectric and metal-to-metal bonded device. In some embodiments, the bonded dies are subsequently baked, annealed, pressed, or otherwise processed to strengthen or complete the bond.

[0041] In addition, although specific processes for initiating and strengthening bonding have been described, these descriptions are intended to illustrate, not to limit the embodiments. Instead, any suitable combination of baking, annealing, pressing, or process combinations may be used. All of these processes are fully intended to be included within the scope of the embodiments.

[0042] Figure 6Also shown is that once the first semiconductor device 601 is bonded, a gap fill material 613 is deposited to fill the space around the first semiconductor device 602 and provide additional support. In one embodiment, the gap fill material 613 can be a material deposited to fill and overfill the space around the first semiconductor device 601, such as silicon oxide, silicon nitride, silicon oxynitride, combinations of these, etc. However, any suitable material and deposition method can be used.

[0043] Once the gap fill material 613 is deposited, the gap fill material 613 may be planarized to expose the first semiconductor device 601. In one embodiment, the planarization process may be a chemical mechanical planarization process, a grinding process, etc. However, any suitable planarization process may be used.

[0044] Figure 7 The connection of the support substrate 701 to the first semiconductor device 601 and the gap filling material 613 is shown. In one embodiment, the support substrate 701 can be a support material transparent to the wavelength of light desired to be used, such as silicon, and can be bonded using, for example, an adhesive ( Figure 7 However, in other embodiments, the support substrate 701 may be bonded to the first semiconductor device 601 and the gap filling material 613 using, for example, a bonding process. The support substrate 701 may be connected using any suitable method.

[0045] Figure 7 Also shown is a support substrate 701 including a coupling lens 703 positioned to facilitate coupling from an optical fiber ( Figure 7 The coupling lens 703 is formed by shaping the material of the supporting substrate (eg, silicon) using a mask and etching process. However, any suitable process may be used.

[0046] Figure 7 Also shown is the formation of an oxide layer 705 over the support substrate 701. In one embodiment, similar processes and materials as the gap fill material 613 (described above for Figure 6 As described above, the oxide layer 705 is formed by using a plurality of methods and materials. However, any suitable method and material may be used.

[0047] Figure 8The first substrate 101 and the optional first insulator layer 103 are shown removed, thereby exposing the first active layer 201 of the first optical component 203. In one embodiment, the first substrate 101 and the first insulator layer 103 may be removed using a planarization process, such as a chemical mechanical polishing process, a grinding process, one or more etching processes, combinations of these, etc. However, any suitable method may be used to remove the first substrate 101 and / or the first insulator layer 103.

[0048] Once the first substrate 101 and the first insulator layer 103 are removed, the second active layer 801 of the fourth optical component 803 may be formed on the back side of the first active layer 201. In one embodiment, similar materials and similar processes as the second optical component 503 of the first metallization layer 501 may be used (described above for Figure 5 As described above, the second active layer 801 of the fourth optical component 803 is formed. For example, the second active layer 801 of the fourth optical component 803 can be formed by alternating layers of a cladding material such as silicon oxide and a core material such as silicon nitride formed using deposition and patterning processes to form an optical component such as a waveguide.

[0049] Figure 8 Also shown is a first reflector 805, which may be formed within the second active layer 801. In one embodiment, the first reflector 805 may be formed by initially forming a recess ( Figure 8 ), to form the first reflector 805. Once the recess is formed, a reflector coating can be deposited to line the recess. In one embodiment, the reflector coating can be a single layer of reflective material, such as aluminum copper, copper, gold, aluminum, combinations of these, or the like, or can otherwise be a multilayer structure, such as a Bragg reflector including alternating layers of silicon dioxide and amorphous silicon. The individual materials of the reflector coating can be deposited using any suitable method, such as chemical vapor deposition, physical vapor deposition, plating, combinations of these, or the like, and the individual layers can then be further patterned (e.g., removing horizontal portions of the deposited material) using, for example, a photolithographic mask and etching process. The material for the reflector coating can be deposited to about Peace However, any suitable material and method may be used to form the reflector coating along the sidewalls of the recess.

[0050] Fig. 9The formation of a first through device via (TDV) 901 is shown, and the formation of a third bonding layer 903. In one embodiment, the first through device via 901 extends through the second active layer 801 and the first active layer 201, thereby providing a fast path for power, data, and ground through the optical interposer 100. In one embodiment, the first through device via 901 can be formed by initially forming a through device via opening into the optical interposer 100. The through device via opening can be formed by applying and developing a suitable photoresist (not shown), and removing the exposed portions of the second active layer 801 and the optical interposer 100.

[0051] Once the through-device via opening is formed in the optical interposer 100, the through-device via opening may be lined with a liner. The liner may be an oxide formed, for example, from tetraethyl orthosilicate (TEOS) or silicon nitride, although any suitable dielectric material may alternatively be used. The liner may be formed using a plasma enhanced chemical vapor deposition (PECVD) process, although other suitable processes, such as physical vapor deposition or thermal processes, may also be used.

[0052] Once the liner is formed along the sidewalls and bottom of the through-device via opening, a barrier layer (also not separately shown) can be formed, and the remainder of the through-device via opening can be filled with a first conductive material. The first conductive material can include copper, although other suitable materials can be used, such as aluminum, alloys, doped polysilicon, combinations thereof, etc. The first conductive material can be formed by electroplating copper onto a seed layer (not shown), filling and overfilling the through-device via opening. Once the through-device via opening is filled, the excess liner, barrier layer, seed layer, and first conductive material outside the through-device via opening can be removed by a planarization process such as chemical mechanical polishing (CMP), although any suitable removal process can be used.

[0053] Optionally, in some embodiments, once the first through-device via 901 is formed, a second metallization layer ( Fig. 9 In one embodiment, the second metallization layer may be formed as described above for the first metallization layer 501, for example, using a damascene process, a dual damascene process, etc. as alternating layers of dielectric material and conductive material. In other embodiments, the second metallization layer may be formed using a plating process to form and shape the conductive material and then cover the conductive material with a dielectric material. However, any suitable structure and manufacturing method may be used.

[0054] The third bonding layer 903 is formed to provide electrical connection between the optical interposer 100 and the subsequently connected device. In one embodiment, the third bonding layer 903 can be similar to the first bonding layer 505, for example, having a third bonding pad 909 (similar to the first bonding pad 507) or even a fifth optical component 911 (similar to the third optical component 511). However, any suitable device can be used.

[0055] Fig.10 A glass interposer 1001 is shown to be connected to the first optical package 900. In one embodiment, the glass interposer 1001 includes a second substrate 1003, a second through-device via 1004, a third metallization layer 1005, a fourth bonding layer 1007, and a fifth bonding layer 1009. Looking first at the second substrate 1003, the second substrate 1003 may include a material that allows for visual transparency with high dimensional stability under thermal loads and still has a thermal expansion coefficient close to that of silicon configured in other parts of the device. In certain embodiments, the second substrate 1003 may be formed of materials such as glass, polymers, epoxy resins, combinations of these, and the like. However, any suitable material may be used.

[0056] The first lens 1011 may be formed in the second substrate 1003 to help connect the two sides by re-collimating the light signal as it passes through the first lens 1011. In one embodiment, the first lens 1011 may be formed using a laser ablation process, a mask and etching process, a combination of these, or the like. In an embodiment where the second substrate 1003 is glass, a laser ablation process may be used to form a holographic pattern in the glass of the second substrate 1003. However, any suitable process may be used.

[0057] Of course, although the first lens 1011 is described as being formed using a laser ablation process, this is not the only device that can be formed using a laser ablation process. For example, waveguides, other lenses, and other optical components can be similarly formed. All of these devices and all suitable methods for forming these devices are fully intended to be included within the scope of the embodiments.

[0058] The second through-device via 1004 may be formed to extend through the second substrate 1003 and provide an electrical connection between the first side of the second substrate 1003 and the second side of the second substrate 1003. In one embodiment, similar processes and similar materials as the first through-device via 901 may be used, such as those described above for Fig. 9 The described method of forming an opening, depositing a conductive material within the opening, and then thinning to expose the conductive material forms the second through-device via 1004. However, any suitable method and material may be used.

[0059] A third metallization layer 1005 may be formed over the first side of the second substrate 1003. In one embodiment, the third metallization layer 1005 may be formed as described above for the first metallization layer 501, for example, using a damascene process, a dual damascene process, etc. as alternating layers of dielectric material and conductive material. In other embodiments, the third metallization layer 1005 may be formed using a plating process to form and shape the conductive material and then cover the conductive material with a dielectric material. However, any suitable structure and manufacturing method may be used.

[0060] The fourth bonding layer 1007 is formed to provide electrical connection between the glass interposer 1001 and the subsequently connected device. In one embodiment, the fourth bonding layer 1007 can be similar to the first bonding layer 505, for example, having a fourth bonding pad 1012 (similar to the first bonding pad 507) or even a sixth optical component 1013 (similar to the third optical component 511). However, any suitable device can be used.

[0061] The fourth bonding layer 1007 may further include a second reflector 1015. In one embodiment, the recess ( Fig.10 1015). Once the recess is formed, a reflector coating may be deposited to line the recess. In one embodiment, the reflector coating may be a single layer of reflective material, such as aluminum copper, copper, gold, aluminum, combinations of these, or the like, or may otherwise be a multilayer structure, such as a Bragg reflector including alternating layers of silicon dioxide and amorphous silicon. The individual materials of the reflector coating may be deposited using any suitable method, such as chemical vapor deposition, physical vapor deposition, plating, combinations of these, or the like, and the individual layers may then be further patterned (e.g., removing horizontal portions of the deposited material) using, for example, a photolithographic mask and etching process. The material for the reflector coating may be deposited to about Peace However, any suitable material and method may be used to form the reflector coating along the sidewalls of the recess.

[0062] Next, the fifth bonding layer 1009 can be similar to the first bonding layer 505, for example, having a fifth bonding pad 1017 (similar to the first bonding pad 507) or even a seventh optical component 1019 (similar to the third optical component 511). However, any suitable devices and methods can be used.

[0063] In addition, the fifth bonding layer 1009 may further include a third reflector 1021. In one embodiment, the third reflector 1021 may be formed using a method and material similar to that of the second reflector 1015. However, any suitable method may be used.

[0064] Fig.11 As shown, once the glass substrate 1001 is formed, the first optical package 900 can be connected to the glass interposer 1001. In one embodiment, dielectric-to-dielectric and metal-to-metal bonding processes can be used, similar to those described above for Figure 6 The process described above is used to connect the first optical package 900 to the glass interposer 1001. For example, the surfaces of the first optical package 900 and the glass interposer 1001 are activated, the third bonding pad 909 is aligned with the fourth bonding pad 1012, and the third bonding pad 909 is placed in contact with the fourth bonding pad 1012, and subsequent annealing and pressure are used to strengthen the bonding. However, any suitable bonding process may be used.

[0065] Fig.11 Also shown is the bonding of the laser die 1103 and the second semiconductor device 1105 to the glass interposer 1001. In one embodiment, the laser die 1103 is additionally bonded to the glass interposer 1001 to replace the glass interposer 1001 to receive light from the outside to provide power for the optical device. In some embodiments, the laser die 1103 may include a light generating structure, such as one or more laser diodes ( Fig.11 In certain embodiments, the laser diode may be a Fabry-Perot diode and may be based on III-V materials, II-VI materials, or any other suitable set of materials.

[0066] In certain embodiments, one or more laser diodes may include a first contact, a first buffer layer, a first active diode layer including a plurality of quantum wells (MQWs), a second buffer layer, and a second contact ( Fig.11 (not shown separately) to generate the desired light. In addition, the generated light can be output from the laser die 1103 through, for example, the first contact and the associated waveguide. However, any suitable structure can be used to form one or more laser diodes and generate the desired light.

[0067] In addition, the laser die 1103 may further include a sixth bonding pad 1107. In one embodiment, the sixth bonding pad 1107 may be similar to the third bonding pad 909, for example, as a contact pad. However, any suitable material and shape of the connector may be used.

[0068] Once the laser die 1103 is formed and / or otherwise received, the laser die 1103 may be bonded to the glass interposer 1001. In one embodiment, dielectric-to-dielectric and metal-to-metal may be used, similar to the above for Figure 6 The bonding process described is used to bond the laser die 1103 to the glass interposer 1001. However, any suitable bonding process may be used.

[0069] Fig.11 Also shown is the bonding of a second semiconductor device 1105 to the glass interposer 1001. In some embodiments, the second semiconductor device 1105 is an electronic integrated circuit (EIC), such as a device comprising a stack of multiple interconnected semiconductor substrates. For example, the second semiconductor device 1105 may be an ASIC device, a memory device such as a high bandwidth memory (HBM) module, a hybrid memory data set (HMC) module, an xPU, a logic die, a 3DIC die, a CPU, a GPU, a SoC die, a MEMS die, a combination of these, and the like. Any suitable device having any suitable functionality may be used, and all such devices are fully intended to be included within the scope of the embodiments.

[0070] In one embodiment, the second semiconductor device 1105 can be bonded to the glass interposer 1001 using, for example, the seventh bonding pad 1109. In one embodiment, the seventh bonding pad 1109 can be similar to the third bonding pad 909, for example, as a contact pad. However, any suitable material and shape of connection can also be used.

[0071] Additionally, once the seventh bonding pad 1109 is formed, the second semiconductor device 1105 may be bonded to the glass interposer 1001. In one embodiment, dielectric-to-dielectric and metal-to-metal may be used, similar to the above for Fig.11 The described bonding process is used to bond the second semiconductor device 1105 to the glass interposer 1001. However, any suitable bonding process may be used.

[0072] Once the second semiconductor device 1105 is bonded, the second semiconductor device 1105, the laser die 1103, and the first optical package 900 may be sealed with an encapsulant 1111 to form the first module 1100. In one embodiment, the encapsulant 1111 may be a molding compound, an epoxy resin, or the like. The encapsulant 1111 may be applied by compression molding, transfer molding, or the like. The encapsulant 1111 is also placed in the gap region between the second semiconductor device 1105, the laser die 1103, and the first optical package 900. The encapsulant 1111 may be applied in a liquid or semi-liquid form and then subsequently cured.

[0073] Once the encapsulant 1111 is placed, a planarization process is performed on the encapsulant 1111. Once planarization is performed, the top surfaces of the encapsulant 1111, the second semiconductor device 1105, the laser die 1103, and the first optical package 900 are substantially coplanar after the planarization process within the process variation range. The planarization process can be, for example, chemical mechanical polishing (CMP), a grinding process, etc. In some embodiments, planarization can be omitted.

[0074] Once the second semiconductor device 1105, the laser die 1103, and the first optical package 900 are bonded to the glass interposer 1001, the glass interposer 1002 can be bonded to the second substrate 1113 through, for example, the first external connector 1115. In one embodiment, the second substrate 1113 can be a packaging substrate, which can be a printed circuit board (PCB) or the like. The second substrate 1113 may include one or more dielectric layers and conductive components, such as wires and vias. In some embodiments, the second substrate 1113 may include through vias, active devices, passive devices, and the like. The second substrate 1113 may also include conductive pads formed at the upper and lower surfaces of the second substrate 1113.

[0075] The first external connector 1115 can be aligned with the corresponding conductive connection on the second substrate 1113. Once aligned, the first external connector 1115 can then be reflowed to bond the second substrate 1113 to the glass interposer 1001. However, any suitable bonding process can be used to connect the glass interposer 1001 to the second substrate 1113.

[0076] Once joined, a first underfill 1110 may be placed around the first external connector 1115. In one embodiment, the first underfill 1110 is a protective material that cushions and supports the structure from operational and environmental degradation, such as stress caused by heat during operation. The first underfill 1110 may be placed using an injection process with capillary action, or may be formed in other ways, and the first underfill 1100 may, for example, include a liquid epoxy that is dispensed and then cured to harden.

[0077] In addition, the second substrate 1113 may be further prepared by forming a second external connector 1117 on a side of the second substrate 1113 opposite to the first optical package 900, by placement. In one embodiment, the second external connector 1117 may be formed using a process and material similar to that of the first external connector 1115. However, any suitable materials and processes may be used.

[0078] Fig.12The connections of the fiber array unit (FAU) assembly 1200 are shown to provide inlet and outlet ( Fig.12 Not shown, but will be addressed below Fig.13 In one embodiment, the fiber array unit assembly 1200 receives the optical fiber 1201, arranges the optical fiber 1201 with the optical fiber jacket 1203, and directs the optical signal to the deflection mirror 1205 aligned with the coupling lens 703. A support material such as a glass portion 1207 and a silicon substrate 1209 supports the deflection mirror 1205 and the optical fiber 1201 and is held together with a refractive index matching gel 1211.

[0079] Fig.13 Multiple optical paths are shown by which the optical signal 1301 (indicated by the arrows labeled 1301) can be obtained through various structures. In one path, the optical signal 1301 can be generated by the laser die 1103 and evanescently coupled to the sixth optical component 1013 within the fourth bonding layer 1007. The fourth bonding layer 1007 routes the optical signal 1301 to the first optical package 900, where the optical signal 1301 is evanescently coupled to the fifth optical component 911 of the third bonding layer 903 and the fourth optical component 803 of the second active layer 801. From the fifth optical component 911 and the fourth optical component 803, the optical signal 1301 can be directed toward the first reflector 805, which redirects the optical signal 1301 through the coupling lens 703 and into the fiber array unit assembly 1200.

[0080] Observing another optical path that can be obtained through the structure, an optical signal 1301 can be generated by the laser die 1103 and evanescently coupled to the sixth optical component 1013 within the fourth bonding layer 1007. The fourth bonding layer 1007 routes the optical signal 1301 to the second reflector 1015, which redirects the optical signal 1301 through the first lens 1011 to the third reflector 1021. The third reflector 1021 then redirects the optical signal 1301 into the seventh optical component 1019.

[0081] By utilizing the glass interposer 1001 described above, the dimensional stability of the device under thermal load is improved. In particular, by using a material with a similar thermal expansion coefficient to other structures (such as glass), the associated overall stress is less when under thermal load. In addition, by using glass, there are alignment advantages due to visual transparency, which helps to more easily discern the via location, thereby allowing narrower pad layouts (whereas previous misalignments used wider pad layouts). This allows for dense juxtaposition of devices.

[0082] Fig.14AAnother embodiment is shown in which the first optical package 900 is connected to the glass interposer 1001 through a third external connector 1401, rather than dielectric-to-dielectric and metal-to-metal bonding. In this embodiment, the third bonding layer 903 is not formed, and the third external connector 1401 is used to electrically and physically connect the first optical package 900 to the glass interposer 1001.

[0083] The third external connector 1401 can be a conductive bump (e.g., a C4 bump, a ball grid array, a microbump, etc.), or a conductive column using materials such as solder and copper. In an embodiment in which the third external connector 1401 is a contact bump, the third external connector 1401 can include a material such as tin, or other suitable materials such as silver, lead-free tin, or copper. In an embodiment in which the third external connector 1401 is a tin solder bump, the third external connector 1401 can be formed by initially forming a tin layer by common methods such as evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the tin layer is formed on the structure, reflow can be implemented to shape the material into the desired bump shape.

[0084] Once the third external connector 1401 is formed, the first optical package 900 can be connected to the glass interposer 1001. In one embodiment, the first optical package 900 can be connected to the glass interposer 1001 by aligning the third external connector 1401 with the conductive portion of the glass interposer 1001. Once aligned and in physical contact, the third external connector 1401 can be reflowed by raising the temperature of the third external connector 1401 above the eutectic point of the third external connector 1401, thereby converting the material of the third external connector 1401 to a liquid phase. Once reflowed, the temperature is lowered to convert the material of the third external connector 1401 back to a solid phase, thereby bonding the first optical package 900 to the glass interposer 1001. Finally, a second underfill 1410 (similar to the first underfill 1110) can be dispensed and cured.

[0085] Additionally, in this embodiment, the laser die 1103 can be bonded to the glass interposer 1001 adjacent to the first optical package 900 (e.g., using other connectors in the third external connector 1401). Thus, the optical signal 1301 from the laser die 1103 can be transmitted directly to the first optical package 900, rather than being transmitted through the sixth optical component 1013 of the glass interposer 1001.

[0086] In certain embodiments, the fourth optical assembly 803 and the laser die 1103 of the first optical package 900 may include one or more edge couplers 1403 (for clarity, Fig.14A not shown separately), for example Fig. 14B , with surrounding layers removed for clarity, for transmitting optical signals between the first optical package 900 and the laser die 1103. In embodiments where one or more edge couplers 1403 are multi-core edge couplers, one or more edge couplers 1403 may include a plurality of cores 1405 positioned around a tapered portion 1407, wherein the tapered portion 1407 is formed continuously with a waveguide portion (not shown separately) of the fourth optical component 803. Fig.14A and Fig. 14B In the drawings, surrounding structures that are also used for support, such as cladding materials, etc., have been removed to more easily illustrate the structure of this embodiment of one or more edge couplers 1403.

[0087] In one embodiment, a plurality of cores 1405 are formed in a manner similar to other components of the fourth optical assembly 803 and using similar materials, such as optical waveguides (e.g., depositing a core material such as silicon nitride, patterning the core material, and depositing a cladding material over the core material). Additionally, in this embodiment, there is an array of eight cores 1405 in three levels. In a 3-2-3 configuration, the first level can have three cores 1405 aligned with each other, the second level can have two cores 1405 aligned with each other, and the third level can have three cores 1405 aligned with each other. Additionally, each core 1405 is aligned with other cores in the same column. However, any suitable number of cores 1405 and any suitable number of levels may be used.

[0088] Back to Fig.14A , the laser die 1103 can transmit the optical signal 1301 to one or more edge couplers 1403 through additional edge couplers 1403. In one embodiment, the edge couplers 1403 located within the laser die 1103 can be similar to the one or more edge couplers 1403 located within the first optical package 900 (e.g., multi-core edge couplers), wherein the edge couplers 1403 within the laser die 1103 are aligned with the edge couplers 1403 located within the first optical package 900. However, any suitable transmission structure can be used.

[0089] Fig.14AIt is also shown that in this embodiment, the first lens 1011 within the glass interposer 1001 can be formed together with the second lens 1409 to provide an additional path through the glass interposer 1001 for the optical signal 1301. In one embodiment, the second lens 1409 can be formed in a similar manner as the first lens 1011. However, in other embodiments, the second lens 1409 can be formed using a different process than the first lens 1011.

[0090] In addition, in this embodiment, the coupling module 1413 can be connected to the back of the glass interposer 1001 to provide an additional path for the optical channel component. In one embodiment, the coupling module 1413 can include a substrate 1415 and an eighth optical component 1417 and a fourth reflector 1419. In one embodiment, the sixth optical component 1013 and the second reflector 1015 (the above for Fig.10 The eighth optical component 1417 and the fourth reflector 1419 may be formed using processes and materials similar to those described above. However, any suitable processes and materials may be used.

[0091] Once the coupling module 1413 is prepared, the coupling module 1413 can be bonded to the glass interposer 1001, and a third underfill 1420 (similar to the first underfill 1110) can be dispensed around the coupling module 1413. In one embodiment, the coupling module 1413 can be bonded to the glass interposer 1001 using dielectric-to-dielectric bonding (also known as fusion bonding). In particular, a surface of the coupling module 1413 can be activated, the fourth reflector 1419 can be aligned to receive the optical signal 1301 from the second lens 1409, and the coupling module 1413 can be physically connected to the glass interposer 1001. However, any suitable bonding process can be used.

[0092] Fig.15 It is shown that in the above Figure 14A-14B In the discussed embodiment, multiple routes can be obtained through the structure for the optical signal 1301. In the first route, the optical signal 1301 can be generated by the laser die 1103 and transmitted to the fourth optical component 803 and routed to the first reflector 805. The first reflector 805 redirects the optical signal through the coupling lens 703 and routes to the fiber array unit assembly 1200.

[0093] In a second route, the optical signal 1301 may be generated by the laser die 1103 and transmitted to the fourth optical component 803, and then coupled into the first optical component 203, where the optical signal 1301 is routed to the grating coupler 1501 of the first optical component 203. The grating coupler 1501 redirects the optical signal 1301 through the glass interposer 1001, through the second lens 1409 toward the coupling module 1413. The coupling module 1413 may then route the optical signal 1301 back to the seventh optical component 1019 of the fifth bonding layer 1009 as desired.

[0094] In a third route, the optical signal 1301 may be generated by the laser die 1103 and transmitted to the fourth optical component 803 and then coupled into the first optical component 203, where the optical signal 1301 is routed to the grating coupler 1501 of the first optical component 203. The grating coupler 1501 redirects the optical signal 1301 upward toward the fiber array unit assembly 1200, where the optical signal 1301 is received and guided into the optical fiber.

[0095] In the fourth route, the optical signal 1301 can be generated by the laser die 1103 and transmitted to the fourth optical component 803, and then coupled to the sixth optical component 1013 of the fourth bonding layer 1007 (or otherwise directly coupled from the laser die 1103 to the sixth optical component 1013 of the fourth bonding layer 1007). The sixth optical component 1013 guides the optical signal 1301 to the second reflector 1015, and the second reflector 1015 redirects the optical signal 1301 through the first lens 1011 to the third reflector 1021. Then, the third reflector 1021 redirects the optical signal 1301 to the seventh optical component 1019 of the fifth bonding layer 1009.

[0096] Fig.16 Another embodiment utilizing a glass interposer 1001 is shown. However, in this embodiment, the fiber array unit assembly 1200 is not connected to the first optical package 900 (as described above for Fig.12 ), but is connected to a second glass interposer 1601, which replaces the second substrate 1113 (as described above for Fig.11In one embodiment, the second glass interposer 1601 includes a third substrate 1603, a second through device via 1605, a fourth metallization layer 1607, and a fifth metallization layer 1609, and a second external connector 1117. In one embodiment, the third substrate 1603, the second through device via 1604, and the third metallization layer 1605 may be formed as described above for the second substrate 1003, the second through device via 1004, and the third metallization layer 1005. However, any suitable method and material may be used.

[0097] In one embodiment, the optical fiber array unit assembly 1200 may be connected to the second glass interposer 1601 in a manner similar to that described above for the connection of the optical fiber array unit assembly 1200. In addition, to accommodate the placement of the optical fiber array unit assembly 1200, a fifth reflector 1611 and a sixth reflector 1613 may be formed within the second glass interposer 1601 to receive the optical signal 1301 from the glass interposer 1001 and to send the optical signal 1301 to the glass interposer 1001. In one embodiment, the fifth reflector 1611 and the sixth reflector 1613 are formed in a manner similar to the first lens 1011, for example, by using a laser ablation process to change the properties of the glass of the third substrate 1603. However, any suitable method may be used.

[0098] In addition, if necessary, the first waveguide 1615 and the third lens 1617 may be formed to change the optical signal 1301 when the optical signal 1301 passes through the second glass interposer 1601 between the fifth reflector 1611 and the sixth reflector 1613. In one embodiment, the first waveguide 1615 and the third lens 1617 may be formed using a laser ablation process to form a desired holographic pattern inside the material (e.g., glass) of the second glass interposer 1601. However, any suitable method and any other suitable passive device may be used.

[0099] Of course, while the first waveguide 1615 and the third lens 1617 are described as being formed using a laser ablation process, these are not the only devices that can be formed using a laser ablation process. For example, other waveguides, other lenses, and other passive optical components can be similarly formed. All of these devices and all suitable methods for forming these devices are fully intended to be included within the scope of the embodiments.

[0100] Fig.17 Show that by using Fig.16, more routes for the optical signal 1301 may be obtained. For example, in a first route for the present embodiment, the optical signal 1301 may be generated by the laser die 1103 and evanescently coupled to the sixth optical component 1013 within the fourth bonding layer 1007. The fourth bonding layer 1007 routes the optical signal 1301 to the first optical package 900, where the optical signal 1301 is evanescently coupled to the fifth optical component 911 of the third bonding layer 903 and the fourth optical component 803 of the second active layer 801. From the fifth optical component 911 and the fourth optical component 803, the optical signal 1301 may be directed toward the first reflector 805, which redirects the optical signal 1301 through the coupling lens 703 and into an external coupler (e.g., Fig.17 additional optical fibers not shown).

[0101] In the second routing for this embodiment, the optical signal 1301 can be generated by the laser die 1103 and evanescently coupled to the sixth optical component 1013 within the fourth bonding layer 1007. The fourth bonding layer 1007 routes the optical signal 1301 to the second reflector 1015, which redirects the optical signal 1301 to the third reflector 1021. The third reflector 1021 then redirects the optical signal 1301 to the seventh optical component 1019 of the fifth bonding layer 1009.

[0102] In the third routing for this embodiment, the optical signal 1301 can be generated by the laser die 1103 and evanescently coupled to the sixth optical component 1013 within the fourth bonding layer 1007. The fourth bonding layer 1007 routes the optical signal 1301 to the second reflector 1015, which redirects the optical signal 1301 to the fifth reflector 1611, through the third lens 1617 and the first waveguide 1615, and to the sixth reflector 1613, which redirects the optical signal 1301 into the fiber array unit assembly 1200.

[0103] Fig.18A Another embodiment utilizing a second glass interposer 1601 is shown. However, in this embodiment, rather than connecting a single module of the first module 1100 to the second glass interposer 1601, multiple modules of the first module 1100 are connected to the second glass interposer 1601. In one embodiment, each first module 1100 may have the same structure (in embodiments where similar functions are desired), or may otherwise have different structures (in embodiments where different functions are desired). Any suitable type of device may be used.

[0104] By connecting multiple modules of the first module 1100 to the second glass interposer 1601 , the connection of the fiber array unit assembly 1200 to the second glass interposer 1601 can be used to route optical signals between the fiber array unit assembly 1200 and each first module 1100 .

[0105] Fig.18B FIG. 1 shows a top view of a possible arrangement of multiple modules of the first module 1100 on the second glass interposer 1601. Fig.18B As can be observed in FIG. 1 , in some embodiments, there may be six first modules 1100 arranged in a rectangular pattern on the second glass interposer 1601. However, any suitable number of first modules 1100 arranged in any suitable pattern may be used.

[0106] Of course, although the above Figure 1-18B Specific embodiments are discussed, but these embodiments are intended to illustrate the ideas and are not meant to limit the ideas to the precise embodiments presented. Instead, the many ideas presented can be arranged in any suitable combination. As an example of an alternative embodiment, the coupling module 1413 can be combined with Fig.12 As another example, for Figure 16-18B The illustrated and discussed embodiments may also be implemented with a third external connector 1401 instead of dielectric-to-dielectric and metal-to-metal bonding.Any suitable combination of these ideas may be used, and all such combinations are fully intended to be included within the scope of the embodiments.

[0107] By utilizing a glass interposer as described above, the dimensional stability of the entire device under thermal load is improved. In particular, by using a material with a similar coefficient of thermal expansion as other structures (e.g., glass), there is less overall stress associated when under thermal load. Additionally, the visual transparency of the glass has alignment advantages, which helps to more easily discern via locations, thereby allowing narrower pad layouts (whereas previous misalignments used wider pad layouts). This allows for dense juxtaposition of devices and an overall reduction in size, allowing for more devices and higher overall transmission.

[0108] In one embodiment, a method of manufacturing an optical device includes: forming a first optical package; and bonding the first optical package to a first glass interposer. In one embodiment, the method also includes: bonding a laser die to the first glass interposer. In one embodiment, the first optical package includes a multi-core edge coupler aligned with the output of the laser die. In one embodiment, the laser die is optically coupled to the first optical package through the first glass interposer. In one embodiment, the method also includes: bonding the first glass interposer to a second glass interposer. In one embodiment, the method also includes: connecting a fiber array unit to the second glass interposer. In one embodiment, the method also includes: connecting the fiber array unit to the first glass interposer.

[0109] In another embodiment, a method of manufacturing an optical device includes: forming a through-hole through a glass material of an interposer; forming a first redistribution layer over the glass material, the first redistribution layer including a conductive component and an optical component; bonding a first optical device to the first redistribution layer; and bonding a laser die to the first redistribution layer. In one embodiment, bonding the first optical device includes a dielectric-to-dielectric and metal-to-metal bonding process. In one embodiment, bonding the first optical device includes reflowing conductive bumps. In one embodiment, the method further includes: forming a first lens in the glass material at least in part using a laser ablation process. In one embodiment, the method further includes: forming a second redistribution layer on a side of the glass material opposite the first redistribution layer, the second redistribution layer including: a second optical component; and a first reflector, wherein the second reflector is located within the first redistribution layer. In one embodiment, the method further includes: connecting a fiber array unit to the first optical device. In one embodiment, the method further includes: bonding a second interposer to the interposer, the second interposer including a through-hole extending through the second glass material; and connecting the fiber array unit to the second interposer.

[0110] In another embodiment, an optical device includes: a first interposer including a through-hole extending through a first glass material; and a first optical device bonded to the first interposer. In one embodiment, the first optical device is a first optical package. In one embodiment, the optical device also includes: a laser die bonded to the first interposer, the laser die being optically connected to the first optical device through the first interposer. In one embodiment, the optical device also includes: a laser die bonded to the first interposer, the laser die being optically connected to the first optical device through a multi-core edge coupler located within the first optical device. In one embodiment, the optical device also includes: a second interposer bonded to the interposer. In one embodiment, the optical device also includes: a fiber array unit connected to the second interposer, wherein the second interposer includes a second glass material.

[0111] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for performing the same or similar purposes and / or achieving the same or similar advantages as the present disclosure. Those skilled in the art should also be aware that such equivalent structures do not depart from the spirit and scope of the present disclosure, and various changes, substitutions and modifications can be made without departing from the spirit and scope of the present disclosure.

Claims

1. A method for manufacturing an optical device, the method comprising: forming a first optical package; as well as The first optical package is bonded to a first glass interposer.

2. The method according to claim 1, further comprising: A laser die is bonded to the first glass interposer.

3. The method according to claim 2, wherein: The first optical package includes a multi-core edge coupler aligned with the output of the laser die.

4. The method according to claim 2, wherein: The laser die is optically coupled to the first optical package through the first glass interposer.

5. A method for manufacturing an optical device, the method comprising: forming a through via through the glass material of the interposer; forming a first redistribution layer over the glass material, the first redistribution layer comprising a conductive component and an optical component; bonding a first optical device to the first redistribution layer; as well as A laser die is bonded to the first redistribution layer.

6. The method according to claim 5, wherein: The bonding of the first optical device includes dielectric-to-dielectric and metal-to-metal bonding processes.

7. The method according to claim 5, wherein: The bonding the first optical device includes reflowing conductive bumps.

8. An optical device, comprising: a first interposer including through vias extending through the first glass material; as well as A first optical device is bonded to the first intermediate layer.

9. The optical device according to claim 8, wherein: The first optical device is a first optical package.

10. The optical device according to claim 8, further comprising: A laser die is bonded to the first interposer, and the laser die is optically connected to the first optical device through the first interposer.

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