Thermal simulation modeling method and device of surface electrode and storage medium

Abstract

The invention discloses a thermal simulation modeling method and device of a surface electrode and a storage medium. The method comprises the steps of obtaining a device model of a surface acoustic wave device; performing grid division on the device model; extracting a plurality of electrode unit models from the device model according to a grid scale corresponding to grid division to form an equivalent model of a surface electrode; each electrode unit model comprises an electrode finger model and a target piezoelectric region corresponding to the electrode finger model; the target piezoelectric region is the top region of the model of the piezoelectric film, and the width of the target piezoelectric region is greater than that of the model of the electrode finger; the thickness of the target piezoelectric region is greater than or equal to a grid scale. Therefore, the equivalent modeling model of the surface electrode constructed based on the method can improve the subsequent rapid and accurate thermal simulation of the surface acoustic wave device.

Description

Technical Field

[0001] The invention relates to the technical field of surface acoustic wave resonators, and in particular to a thermal simulation modeling method, a device and a storage medium for a surface electrode. Background Art

[0002] Surface acoustic wave (SAW) resonators are usually composed of surface electrodes, piezoelectric films and supporting substrates. Surface acoustic wave filters are usually composed of several surface acoustic wave devices connected in series and parallel. When the surface acoustic wave filter is working, due to the high-frequency vibration of the elastic field of each resonator, a large amount of heat will be generated through acoustic field damping, which will cause the device to heat up. The self-heating effect in the resonator is crucial for power tolerance, device miniaturization and preventing frequency drift caused by temperature rise.

[0003] At present, thermal simulation is usually used to simulate and study the self-heating effect in the resonator. In the process of establishing the filter model, there are three typical characteristic scales: the characteristic scale of the filter chip area >> the characteristic scale of the material substrate thickness >> the electrode line width. If the model is established strictly according to the periodic patterned electrode array of the resonator, the mesh of the model will not be able to be properly divided due to the above-mentioned scale differences (even if the mesh is divided according to the most refined geometric structure, the quality factor of the mesh is likely to tend to 0, or the simulation time is unacceptable due to the explosive growth of the number of degrees of freedom). Therefore, it is necessary to propose a thermal simulation modeling method for the electrode pattern layer of the resonator to realize the thermal simulation of large-scale surface acoustic wave filters. Summary of the invention

[0004] In order to solve the problems of the prior art, the embodiments of the present application provide a thermal simulation modeling method, device and storage medium for a surface electrode. The technical solution is as follows:

[0005] On the one hand, a thermal simulation modeling method for a surface electrode is provided, comprising:

[0006] Acquire a device model of a surface acoustic wave device; the surface acoustic wave device comprises a piezoelectric film and a surface electrode located on the piezoelectric film; the surface electrode comprises an interdigitated electrode; the interdigitated electrode comprises a plurality of electrode fingers arranged in a staggered manner along a first direction; the first direction is a width direction of the electrode fingers;

[0007] Meshing the device model;

[0008] A plurality of electrode unit models are extracted from the device model according to a grid scale corresponding to the grid division to form an equivalent model of the surface electrode; each of the electrode unit models includes a model of the electrode finger and a target piezoelectric region corresponding to the model of the electrode finger; the target piezoelectric region is the top region of the model of the piezoelectric film, and the width of the target piezoelectric region is greater than the width of the model of the electrode finger; the thickness of the target piezoelectric region is greater than or equal to one of the grid scales.

[0009] In a feasible implementation manner, the target piezoelectric region includes a first region, a second region, and a third region sequentially connected along the first direction;

[0010] The pattern of the electrode finger includes a first side and a second side that are opposite;

[0011] The first area is located on the first side; the third area is located on the second side;

[0012] The width of the second region is equal to the width of the electrode finger model, and the width of the first region is equal to the width of the third region;

[0013] The sizes of the plurality of electrode unit models are equal.

[0014] In a feasible implementation manner, after extracting a plurality of electrode unit models from the device model according to the grid scale corresponding to the grid division to form an equivalent model of the surface electrode, the method further includes:

[0015] Determining the equivalent thermal resistance of each of the electrode unit models;

[0016] Based on the equivalent thermal resistance of each electrode unit model in the plurality of electrode unit models, a thermal simulation result of the surface electrode is determined.

[0017] In a feasible implementation manner, determining the equivalent thermal resistance of each electrode unit model includes:

[0018] Acquire a three-dimensional coordinate system of the device model; the three-dimensional coordinate system includes a first coordinate direction, a second coordinate direction and a third coordinate direction which are perpendicular to each other; the first coordinate direction is the first direction; the second coordinate direction is the length direction of the electrode finger; the third coordinate direction is the thickness direction of the electrode finger;

[0019] For each of the electrode unit models, based on the size parameters and thermal conductivity of the electrode finger model, the size parameters and thermal conductivity of the target piezoelectric region, and the wavelength of the device model, respectively determine a first equivalent thermal resistance of the electrode unit model along the first coordinate direction, a second equivalent thermal resistance of the electrode unit model along the second coordinate direction, and a third equivalent thermal resistance of the electrode unit model along the third coordinate direction;

[0020] An equivalent thermal resistance of the electrode unit model is determined based on the first equivalent thermal resistance, the second equivalent thermal resistance, and the third equivalent thermal resistance.

[0021] In a feasible implementation manner, the size parameters of the electrode finger model include the width, cross-sectional area and thickness of the electrode finger model; the size parameters of the target piezoelectric region include the thickness and cross-sectional area of ​​the target piezoelectric region;

[0022] The method of determining the first equivalent thermal resistance of the electrode unit model along the first coordinate direction, the second equivalent thermal resistance of the electrode unit model along the second coordinate direction, and the third equivalent thermal resistance of the electrode unit model along the third coordinate direction based on the size parameters and thermal conductivity of the model of the electrode finger, the size parameters and thermal conductivity of the target piezoelectric region, and the wavelength of the device model, respectively, includes:

[0023] determining a ratio between a thickness of the electrode finger model and a thickness of the target piezoelectric region as a first proportionality coefficient;

[0024] Determining a ratio of a width of the electrode finger model to a half wavelength of the device model as a second proportionality coefficient;

[0025] The first equivalent thermal resistance, the second equivalent thermal resistance, and the third equivalent thermal resistance are determined based on the first proportionality coefficient, the second proportionality coefficient, the thermal conductivity of the model of the electrode fingers, and the thermal conductivity of the target piezoelectric region, respectively.

[0026] In a feasible implementation manner, the first equivalent thermal resistance is expressed as:

[0027]

[0028] Wherein, κ1 represents the thermal conductivity of the model of the electrode finger; κ2 represents the thermal conductivity of the target piezoelectric region; α represents the first proportionality coefficient; and duty represents the second proportionality coefficient;

[0029] The second equivalent thermal resistance is expressed as:

[0030]

[0031] The third equivalent thermal resistance is expressed as:

[0032]

[0033] In a feasible implementation manner, the thickness of the target piezoelectric region is less than or equal to 1 / 10 of the thickness of the model of the piezoelectric film.

[0034] In another aspect, a thermal simulation modeling device is provided, the device comprising:

[0035] An acquisition module, used for acquiring a device model of a surface acoustic wave device; the surface acoustic wave device comprises a piezoelectric film and a surface electrode located on the piezoelectric film; the surface electrode comprises an interdigitated electrode; the interdigitated electrode comprises a plurality of electrode fingers arranged in a staggered manner along a first direction; the first direction is a width direction of the electrode fingers;

[0036] A meshing module, used for meshing the device model;

[0037] An extraction module is used to extract multiple electrode unit models from the device model according to the grid scale corresponding to the grid division to form an equivalent model of the surface electrode; each of the electrode unit models includes a model of the electrode finger and a target piezoelectric area corresponding to the model of the electrode finger; the target piezoelectric area is the top area of ​​the model of the piezoelectric film, and the width of the target piezoelectric area is greater than the width of the model of the electrode finger; the thickness of the target piezoelectric area is greater than or equal to one of the grid scales.

[0038] On the other hand, an electronic device is provided, comprising a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement the thermal simulation modeling method of the surface electrode of any of the above aspects.

[0039] On the other hand, a computer-readable storage medium is provided, in which at least one instruction or at least one program is stored, and the at least one instruction or the at least one program is loaded and executed by a processor to implement a thermal simulation modeling method for a surface electrode as described in any of the above aspects.

[0040] On the other hand, a computer program product or a computer program is provided, the computer program product or the computer program includes computer instructions, the computer instructions are stored in a computer-readable storage medium. A processor of an electronic device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the electronic device performs the thermal simulation modeling method of the surface electrode of any aspect above.

[0041] The embodiment of the present application obtains a device model of a surface acoustic wave device; the surface acoustic wave device includes a piezoelectric film and a surface electrode located on the piezoelectric film; the surface electrode includes a forked electrode; the forked electrode includes a plurality of electrode fingers arranged in a staggered manner along a first direction; the first direction is the width direction of the electrode finger; the device model is meshed; a plurality of electrode unit models are extracted from the device model according to the mesh scale corresponding to the meshing to form an equivalent model of the surface electrode; each of the electrode unit models includes a model of the electrode finger and a target piezoelectric region corresponding to the model of the electrode finger; the target piezoelectric region is the top area of ​​the model of the piezoelectric film, and the width of the target piezoelectric region is greater than the width of the model of the electrode finger; the thickness of the target piezoelectric region is greater than or equal to one of the mesh scales. In this way, accurate modeling of the surface electrode of the surface acoustic wave device can be achieved, which facilitates the subsequent rapid and accurate thermal simulation based on this modeling model. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0043] Figure 1 is a schematic diagram of an exemplary implementation environment of the present application;

[0044] Figure 2 It is a schematic flow chart of a thermal simulation modeling method of a surface electrode exemplified in the present application;

[0045] Figure 3 is a top view of an exemplary surface electrode of the present application;

[0046] Figure 4 is a cross-sectional view of an exemplary surface acoustic wave device of the present application;

[0047] Figure 5 is a topological diagram of an exemplary first filter of the present application;

[0048] Figure 6 is a partial cross-sectional view of an exemplary surface acoustic wave device of the present application;

[0049] Figure 7 is a schematic structural diagram of an exemplary electrode unit model of the present application;

[0050] Figure 8 is a comparison diagram of a device model before and after an equivalent treatment according to an exemplary embodiment of the present application;

[0051] Fig. 9 It is a schematic diagram corresponding to the equivalent thermal resistance of an exemplary electrode unit model of the present application;

[0052] Fig.10 is a topological diagram of an exemplary second filter of the present application;

[0053] Fig.11 is a topological diagram of an exemplary third filter of the present application;

[0054] Fig.12 yes Fig.10 Thermal simulation results corresponding to the filter shown;

[0055] Fig.13 yes Fig.11 Thermal simulation results corresponding to the filter shown;

[0056] Fig.14 It is a structural block diagram of an exemplary thermal simulation modeling device for a surface electrode of the present application.

[0057] The following are illustrations:

[0058] 1-piezoelectric film; 2-surface electrode; 201-electrode finger; 2011-first electrode finger; 2012-second electrode finger; 202-first bus bar; 203-second bus bar; 204-reflection grating; 3-parallel resonator; 4-series resonator; 5-electrode unit model; 6-target piezoelectric region; 601-first region; 602-second region; 603-third region; 7-equivalent model of surface electrode; 8-substrate. DETAILED DESCRIPTION

[0059] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0060] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or server that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0061] See also Figure 1 , which is a schematic diagram of an exemplary implementation environment of the present application, the implementation environment includes a terminal 10 and a simulation module 101 located on the terminal. The simulation module 101 implements the simulation process of the surface acoustic wave device, such as the construction of the device model, the meshing of the device model, the construction of the equivalent model and the thermal simulation.

[0062] The terminal 10 includes but is not limited to mobile phones, computers, intelligent voice interaction devices, smart home appliances, vehicle terminals, aircraft, etc. The terminal 10 is installed with client software such as an application (Application, referred to as App) with content display function, which can be an independent application or a subprogram in the application.

[0063] It should be noted that the server involved in the embodiments of the present application can be an independent physical server, a server cluster or a distributed system composed of multiple physical servers, or a cloud server that provides basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud communications, middleware services, domain name services, security services, CDN (Content Delivery Network) and big data and artificial intelligence platforms.

[0064] See also Figure 2 , which is a schematic diagram of a flow chart of a thermal simulation modeling method for a surface electrode according to an exemplary embodiment of the present invention, and the method can be applied to Figure 1Thermal simulation modeling of the surface electrode in. It should be noted that this specification provides method operation steps as described in the embodiments or flow charts, but more or fewer operation steps may be included based on conventional or non-creative labor. The order of steps listed in the embodiments is only one way of executing the steps among many orders, and does not represent the only order of execution. When the actual system or product is executed, it can be executed in sequence or in parallel (for example, in a parallel processor or multi-threaded processing environment) according to the method shown in the embodiments or drawings. Specific examples Figure 2 As shown, the method may include:

[0065] S201: Obtain a device model of a surface acoustic wave device; the surface acoustic wave device includes a piezoelectric film and a surface electrode located on the piezoelectric film; the surface electrode includes an interdigitated electrode; the interdigitated electrode includes a plurality of electrode fingers arranged alternately along a first direction; the first direction is a width direction of the electrode fingers.

[0066] See also Figure 3 and Figure 4 , which respectively show a top view of an exemplary surface electrode of the present application and a cross-sectional view of an exemplary surface acoustic wave device of the present application. Specifically, the surface acoustic wave device may include a substrate 8, a piezoelectric film 1 and a surface electrode 2 arranged in sequence from bottom to top. Optionally, the surface acoustic wave device may also include an intermediate dielectric layer, which is located between the substrate 8 and the piezoelectric film 1. Optionally, the material of the substrate 8 includes one or more of Si, quartz, SiC, sapphire, and diamond; the material of the intermediate dielectric layer includes SiOx, SiNx or Al2O3. The material of the surface electrode 2 includes one or more of copper, aluminum, gold, silver, tungsten, platinum, nickel, chromium, molybdenum, titanium, graphene, copper-aluminum alloy, and aluminum-silicon alloy. The materials of each layer structure of the device can be selected as needed. Of course, different materials will have different thermal conductivities. Optionally, the above-mentioned intermediate dielectric layer can be a multi-layer material structure or a single-layer material structure, which is not limited here.

[0067] See also Figure 3 The surface electrode 2 specifically includes a forked electrode and a reflector 204 located on both sides of the forked electrode. Specifically, the forked electrode includes a plurality of electrode fingers 201, and a first bus bar 202 and a second bus bar 203 that are arranged opposite to each other; the electrode finger 201 connected to the first bus bar 202 can be called a first electrode finger 2011; the electrode finger 201 connected to the second bus bar 203 can be called a second electrode finger 2012; the plurality of first electrode fingers 2011 and the plurality of second electrode fingers 2012 can be arranged alternately along the first direction to form a periodic electrode array. In fact, this solution is not limited to Figure 3The surface electrode 2 of the illustrated regular structure may also be a deformed or extended structure thereof, such as including a plurality of reflection grids.

[0068] Exemplarily, the first direction involved in this solution can be Figure 3 or Figure 4 The x direction shown can also be the first coordinate direction below; the second coordinate direction can be as follows Figure 3 The y direction is the length direction of the electrode finger 201; the third coordinate direction can be Figure 4 The z direction shown is the thickness direction of the electrode finger 201 .

[0069] In order to facilitate understanding and explanation of the technical solution, in the embodiment of the present application, multiple electrode fingers 201 are arranged at equal intervals, and the widths of the electrode fingers 201 are equal. The wavelength λ of the surface acoustic wave device can be the distance between the centers of adjacent electrode fingers 201 on the same bus bar.

[0070] The filter usually includes at least one series resonator 4 and one parallel resonator 3, see Figure 5 , which shows a topological diagram of the first exemplary filter of the present application. The filter may include three series resonators 4 and two parallel resonators 3. When the filter is working, the high-frequency vibration of the elastic field of each resonator will generate a large amount of heat through acoustic field damping, which will cause the device to heat up. Obviously, the self-heating effect in the resonator is crucial for power tolerance, device miniaturization, and prevention of frequency drift caused by temperature rise. However, in the prior art, when constructing a thermal simulation model of the filter, due to the large differences in the scale characteristics of each layer, specifically, the characteristic scale of the area on the filter chip >> the characteristic scale of the thickness of the material substrate 8 >> the electrode line width. Therefore, if the model is established strictly according to the periodic patterned electrode array of the resonator, the mesh of the model will not be able to be divided normally due to the above-mentioned scale differences. Even if the mesh is divided according to the most refined geometric structure, the quality factor of the mesh is likely to tend to 0, or the simulation time is unacceptable due to the explosive growth in the number of degrees of freedom. Therefore, this scheme re-divides and models the surface electrode 2, that is, by dividing the units according to the number of electrode fingers 201, and dividing a part of the area of ​​​​a piezoelectric film 1 into the units, thereby forming an equivalent model of the surface electrode 2. Based on this equivalent model, it is possible to achieve accurate thermal simulation of the resonator while effectively improving the efficiency of thermal simulation.

[0071] Exemplarily, the device model obtained in step S201 may be Figure 3 and Figure 4 The corresponding resonator model structure.

[0072] S203: Meshing the device model.

[0073] According to different device sizes, the scale of the grid division will also be different. In the embodiment of the present application, when the model of the piezoelectric film 1 is grid-divided, the piezoelectric film 1 can be at least divided into 10 layers, that is, the scale of each grid is less than or equal to 1 / 10 of the thickness of the piezoelectric film 1. This improves the efficiency of thermal simulation while ensuring the accuracy of thermal simulation.

[0074] S205: extracting a plurality of electrode unit models from the device model according to a grid scale corresponding to the grid division to form an equivalent model of the surface electrode; each of the electrode unit models includes a model of the electrode finger and a target piezoelectric region corresponding to the model of the electrode finger; the target piezoelectric region is the top area of ​​the model of the piezoelectric film, and the width of the target piezoelectric region is greater than the width of the model of the electrode finger; the thickness of the target piezoelectric region is greater than or equal to one of the grid scales.

[0075] See also Figure 6 , which is a partial cross-sectional view of an exemplary surface acoustic wave device of the present application. Specifically, two electrode fingers 201 are provided on the piezoelectric film 1, and each dotted line frame corresponds to an electrode unit model 5, Figure 6 The structure shown includes two electrode unit models 5, each electrode unit model 5 includes an electrode finger 201 and a top area of ​​the piezoelectric film 1 (which can be called the target piezoelectric area 6). The electrode unit model 5 can be as follows Figure 7 The structure shown.

[0076] In a feasible implementation, the thickness of the target piezoelectric area 6 is less than or equal to 1 / 10 of the thickness of the model of the piezoelectric film 1. In order to facilitate simulation calculations, improve simulation efficiency and ensure accuracy, the thickness of the target piezoelectric area 6 can be 1 / 10 of the thickness of the model of the piezoelectric film 1, one grid scale equals 1 / 10 of the thickness of the piezoelectric film 1, or two grid scales equal to 1 / 10 of the thickness of the piezoelectric film 1, and there is no limitation here. Optionally, when the thickness of the piezoelectric film 1 is different, the number of layers of the piezoelectric film 1 obtained by gridding it is also different, as long as the target piezoelectric area 6 contains at least one grid-scaled piezoelectric film 1 area.

[0077] In this application example, please continue to refer to Figure 7, the target piezoelectric zone 6 includes a first area 601, a second area 602 and a third area 603 connected in sequence along the first direction; the model of the electrode finger 201 includes a first side and a second side opposite to each other; the first area 601 is located on the first side; the second area 602 is located on the second side; the width of the second area 602 is equal to the width of the model of the electrode finger 201, and the width of the first area 601 is equal to the width of the third area 603; the sizes of the plurality of electrode unit models 5 are equal. In other embodiments, the target piezoelectric zone 6 can also be divided into two areas, namely, an area below the electrode finger 201 and an area on the first side or the second side of the electrode finger 201. However, in order to make it easier to understand this solution, the following is based on Figure 7 The division scheme shown is explained in detail.

[0078] See also Figure 8 , which shows a comparison diagram of a device model before and after an equivalent treatment in the present application. Specifically, Figure 8 Figure (a) is a schematic diagram of the structure of the device model before equivalent processing. Figure 8 Figure (a) in FIG. 1 is a schematic diagram of the structure of the device model after equivalent processing. It can be seen that after equivalent processing, the equivalent model 7 of the surface electrode includes the model of the surface electrode 2 and the target piezoelectric region 6 (the top region of the piezoelectric film 1).

[0079] In a feasible implementation, after extracting multiple electrode unit models from the device model according to the grid scale corresponding to the grid division in step S205 to form an equivalent model of the surface electrode, the method further includes: determining an equivalent thermal resistance of each of the electrode unit models; and determining a thermal simulation result of the surface electrode based on the equivalent thermal resistance of each electrode unit model in the multiple electrode unit models. Based on each constructed electrode unit model, the corresponding equivalent thermal resistance is calculated to generate a corresponding steady-state temperature distribution result.

[0080] In a feasible implementation manner, determining the equivalent thermal resistance of each electrode unit model includes: obtaining a three-dimensional coordinate system of the device model; the three-dimensional coordinate system includes a first coordinate direction, a second coordinate direction, and a third coordinate direction that are perpendicular to each other; the first coordinate direction is the first direction (such as Figure 7 The second coordinate direction is the length direction of the electrode finger (as shown in the x direction); the second coordinate direction is the length direction of the electrode finger (as shown in the x direction); Figure 7 The third coordinate direction is the thickness direction of the electrode finger (as shown in the y direction); the third coordinate direction is the thickness direction of the electrode finger (as shown in the y direction); Figure 7z direction as shown); for each of the electrode unit models, based on the size parameters and thermal conductivity of the electrode finger model, the size parameters and thermal conductivity of the target piezoelectric area, and the wavelength of the device model, respectively determine the first equivalent thermal resistance of the electrode unit model along the first coordinate direction, the second equivalent thermal resistance of the electrode unit model along the second coordinate direction, and the third equivalent thermal resistance of the electrode unit model along the third coordinate direction; determine the equivalent thermal resistance of the electrode unit model based on the first equivalent thermal resistance, the second equivalent thermal resistance, and the third equivalent thermal resistance. Optionally, the equivalent thermal resistance of the electrode unit model can be a data set consisting of the above-mentioned first equivalent thermal resistance, second equivalent thermal resistance, and third equivalent thermal resistance.

[0081] In a feasible implementation, the size parameters of the electrode finger model include the width, cross-sectional area and thickness of the electrode finger model; the size parameters of the target piezoelectric region include the thickness and cross-sectional area of ​​the target piezoelectric region. It should be noted that when calculating the equivalent thermal resistance in different heat transfer directions, the cross-sectional areas of the electrode fingers 201 and the target piezoelectric region 6 (including the first region 601, the second region 602 and the third region 603) corresponding to different heat transfer directions are different. See below for details.

[0082] In a feasible implementation manner, the above-mentioned specific method of determining the first equivalent thermal resistance, the second equivalent thermal resistance and the third equivalent thermal resistance may include: determining the ratio between the thickness of the model of the electrode finger and the thickness of the target piezoelectric region as the first proportional coefficient; determining the ratio between the width of the model of the electrode finger and the half-wavelength of the device model as the second proportional coefficient; and determining the first equivalent thermal resistance, the second equivalent thermal resistance and the third equivalent thermal resistance respectively based on the first proportional coefficient, the second proportional coefficient, the thermal conductivity of the model of the electrode finger and the thermal conductivity of the target piezoelectric region.

[0083] Exemplarily, the first proportionality coefficient α=H1 / H2, wherein H1 represents the thickness of the model of the electrode finger 201; H2 represents the thickness of the target piezoelectric region 6; H2=H eq -H1,H eq represents the thickness of the equivalent model 7 of the surface electrode. The second proportionality coefficient duty=W1 / (λ / 2), wherein W1 represents the width of the model of the electrode finger 201, and λ is the wavelength of the device model, that is, the wavelength of the surface acoustic wave device.

[0084] In a feasible implementation manner, the first equivalent thermal resistance is expressed as the following formula (1):

[0085]

[0086] Wherein, κ1 represents the thermal conductivity of the model of the electrode finger 201 ; κ2 represents the thermal conductivity of the target piezoelectric region 6 .

[0087] The second equivalent thermal resistance is expressed as the following formula (2):

[0088]

[0089] The third equivalent thermal resistance is expressed as the following formula (3):

[0090]

[0091] Specifically, the first equivalent thermal resistance It can be determined based on the following method:

[0092] See also Figure 7 , each electrode unit model 5 can be specifically divided into four regions, namely, the first region 601, the second region 602, the third region 603 and the electrode finger 201. Specifically, the equivalent thermal resistance of the first region 601, the second region 602, the electrode finger 201 and the third region 603 along the first coordinate direction can be respectively expressed as ρ 1x , ρ 2x , ρ 3x , ρ 4x Since the size parameters of the first region 601 and the third region 603 are equal, the equivalent thermal resistances of the two regions are also equal.

[0093] According to the product of the third proportionality coefficient and the wavelength of the device model, ρ is determined by multiplying the first cross-sectional area of ​​the target piezoelectric region 6 and the thermal conductivity of the target piezoelectric region 6 by the product of the third proportionality coefficient and the wavelength of the device model. 1x The third proportional coefficient may be the difference between 1 and the second proportional coefficient, and according to different calculated heat transfer directions, the cross-sectional area of ​​the target piezoelectric region 6 may be divided into a first cross-sectional area of ​​the target piezoelectric region 6, a second cross-sectional area of ​​the target piezoelectric region 6, and a third cross-sectional area of ​​the target piezoelectric region 6. Optionally, the first cross-sectional area of ​​the target piezoelectric region 6 may be the cross-sectional area of ​​the target piezoelectric region 6 corresponding to the equivalent thermal resistance calculated along the first coordinate direction, the second cross-sectional area of ​​the target piezoelectric region 6 may be the cross-sectional area of ​​the target piezoelectric region 6 corresponding to the equivalent thermal resistance calculated along the second coordinate direction, and the third cross-sectional area of ​​the target piezoelectric region 6 may be the cross-sectional area of ​​the target voltage region corresponding to the equivalent thermal resistance calculated along the third coordinate direction. Similarly, the first cross-sectional area of ​​the model of the electrode finger 201 may be the cross-sectional area of ​​the model of the electrode finger 201 corresponding to the equivalent thermal resistance calculated along the first coordinate direction, the second cross-sectional area of ​​the model of the electrode finger 201 may be the cross-sectional area of ​​the model of the electrode finger 201 corresponding to the equivalent thermal resistance calculated along the second coordinate direction, and the third cross-sectional area of ​​the model of the electrode finger 201 may be the cross-sectional area of ​​the model of the electrode finger 201 corresponding to the equivalent thermal resistance calculated along the third coordinate direction.1x Specifically, it can be determined based on the following formula (4):

[0094]

[0095] Among them, S 2x represents the first cross-sectional area of ​​the target piezoelectric region 6, which can be specifically determined based on the following formula (5):

[0096] S 2x =H2·d Formula (5)

[0097] Wherein, d represents the length of the electrode unit model 5 along the second coordinate direction.

[0098] According to the product of the second proportionality coefficient and the wavelength of the device model, ρ is determined by multiplying the first cross-sectional area of ​​the target piezoelectric region 6 and the thermal conductivity of the target piezoelectric region 6 by the product of the product of the second proportionality coefficient and the wavelength of the device model. 2x ρ 2x Specifically, it can be determined based on the following formula (6):

[0099]

[0100] According to the product of the second proportionality coefficient and the wavelength of the device model, ρ is determined by multiplying the first cross-sectional area of ​​the model of the electrode finger 201 and the thermal conductivity of the electrode model. 3x ρ 3x Specifically, it can be determined based on the following formula (7):

[0101]

[0102] Among them, S 1x The first cross-sectional area of ​​the model representing the electrode finger 201 can be determined based on the following formula (8):

[0103] S 1x =H1·d Formula (8)

[0104] For further information, see Fig. 9 The total conduction thermal resistance of the electrode unit model 5 along the first coordinate direction is calculated based on the series-parallel connection of the equivalent thermal resistances of the above four regions, which can be specifically expressed as the following formula (9):

[0105] ρ x =ρ 1x +(ρ 2x ||ρ 3x )+ρ 4x Formula (9)

[0106] The first equivalent thermal resistance of the electrode unit mold 5 Specifically, it can be expressed as follows:

[0107]

[0108] By combining the expression of the first equivalent heat group with the above formulas (4)-(9), the above formula (1) can be obtained.

[0109] The second equivalent thermal resistance It can be determined based on the following method:

[0110] The equivalent thermal resistances of the first region 601, the second region 602, the electrode finger 201 and the third region 603 along the second coordinate direction can be expressed as ρ 1y , ρ 2y , ρ 3y , ρ 4y Since the size parameters of the first region 601 and the third region 603 are equal, the equivalent thermal resistances of the two regions are also equal.

[0111] ρ is determined according to the product of the length of the electrode unit model along the second coordinate direction and the quotient of the second cross-sectional area of ​​the target piezoelectric region 6, the thermal conductivity of the target piezoelectric region 6, and the third proportionality coefficient. 1y ρ 1y Specifically, it can be determined based on the following formula (10):

[0112]

[0113] Among them, S 2y represents the second cross-sectional area of ​​the target piezoelectric region 6, which can be specifically determined based on the following formula (11):

[0114] S 2y =H2·λ Formula (11)

[0115] ρ is determined according to the product of the length of the electrode unit model along the second coordinate direction, the second cross-sectional area of ​​the target piezoelectric region 6, the thermal conductivity of the target piezoelectric region 6, and the second proportional coefficient. 2y ρ 2y Specifically, it can be determined based on the following formula (12):

[0116]

[0117] According to the length of the electrode unit model 5 along the second coordinate direction, ρ is determined by multiplying the second cross-sectional area of ​​the model of the electrode finger 201 and the thermal conductivity of the electrode model. 3y ρ 3y Specifically, it can be determined based on the following formula (13):

[0118]

[0119] Among them, S 1y The second cross-sectional area of ​​the model representing the electrode finger 201 can be determined based on the following formula (14):

[0120]

[0121] Furthermore, the total conduction thermal resistance of the electrode unit model 5 along the second coordinate direction can be calculated based on the series-parallel connection of the equivalent thermal resistances of the above four regions, which can be specifically expressed as the following formula (15):

[0122] ρ y =ρ 1y ||ρ 2y ||ρ 3y ||ρ 4y Formula (15)

[0123] The second equivalent thermal resistance of the electrode unit mold 5 Specifically, it can be expressed as follows:

[0124]

[0125] By combining the expression of the second equivalent heat group with the above formulas (10)-(15), the above formula (2) can be obtained.

[0126] The third equivalent thermal resistance It can be determined based on the following method:

[0127] The equivalent thermal resistances of the first region 601, the second region 602, the electrode finger 201 and the third region 603 along the third coordinate direction can be expressed as ρ 1z , ρ 2z , ρ 3z , ρ 4z Since the size parameters of the first region 601 and the third region 603 are equal, the equivalent thermal resistances of the two regions are also equal.

[0128] ρ is determined according to the product of the thickness of the target piezoelectric region 6, the third cross-sectional area of ​​the target piezoelectric region 6, the thermal conductivity of the target piezoelectric region 6, and the third proportionality coefficient. 1z ρ 1z Specifically, it can be determined based on the following formula (16):

[0129]

[0130] Among them, S 2z represents the third cross-sectional area of ​​the target piezoelectric region 6, which can be specifically determined based on the following formula (17):

[0131] S 2z =d·λ Formula (17)

[0132] ρ is determined according to the product of the thickness of the target piezoelectric region 6, the third cross-sectional area of ​​the target piezoelectric region 6, the thermal conductivity of the target piezoelectric region 6, and the second proportionality coefficient. 2z ρ 2z Specifically, it can be determined based on the following formula (18):

[0133]

[0134] According to the thickness of the target piezoelectric region 6, ρ is determined by multiplying the third cross-sectional area of ​​the model of the electrode finger 201 and the thermal conductivity of the electrode model. 3z ρ 3z Specifically, it can be determined based on the following formula (19):

[0135]

[0136] Among them, S 1z The third cross-sectional area of ​​the model representing the electrode finger 201 can be determined based on the following formula (20):

[0137]

[0138] Furthermore, the total conduction thermal resistance of the electrode unit model 5 along the third coordinate direction can be calculated based on the series-parallel connection of the equivalent thermal resistances of the above four regions, which can be specifically expressed as the following formula (21):

[0139] ρ z =(ρ 1z ||ρ 2z ||ρ 4z )+ρ 3z Formula (21)

[0140] The third equivalent thermal resistance of the electrode unit mold 5 Specifically, it can be expressed as follows:

[0141]

[0142] By combining the expression of the third equivalent heat group with the above formulas (17)-(20), the above formula (3) can be obtained.

[0143] It can be seen that the converged thermal resistance results can be obtained by adopting the solution of the present application, which further confirms that the equivalent modeling method of the present solution can realize fast and accurate thermal simulation of the surface electrode 2.

[0144] See also Fig.10 and 11, which shows the topological diagrams of two exemplary filters of the present application. By adopting the equivalent modeling method of the present application to perform thermal simulation on the above two filters, the following can be obtained respectively: Fig.12 and Fig.13 Thermal simulation results are shown.

[0145] Corresponding to the thermal simulation modeling methods for surface electrodes provided in the above-mentioned embodiments, an embodiment of the present application also provides a thermal simulation modeling device for a surface electrode. Since the thermal simulation modeling device for a surface electrode provided in the embodiment of the present application corresponds to the thermal simulation modeling methods for surface electrodes provided in the above-mentioned embodiments, the implementation methods of the aforementioned thermal simulation modeling methods for surface electrodes are also applicable to the thermal simulation modeling device for a surface electrode provided in this embodiment and will not be described in detail in this embodiment.

[0146] See also Fig.14 , which is a schematic diagram of the structure of a thermal simulation modeling device for a surface electrode exemplified in the present application, the device has the function of implementing the thermal simulation modeling method for the surface electrode in the above method embodiment, and the function can be implemented by hardware, or by hardware executing corresponding software. Fig.14 As shown, the thermal simulation modeling device 1400 may include:

[0147] The acquisition module 1401 is used to acquire a device model of a surface acoustic wave device; the surface acoustic wave device includes a piezoelectric film and a surface electrode located on the piezoelectric film; the surface electrode includes an interdigitated electrode; the interdigitated electrode includes a plurality of electrode fingers arranged in a staggered manner along a first direction; the first direction is a width direction of the electrode finger;

[0148] A meshing module 1402, used for meshing the device model;

[0149] The extraction module 1403 is used to extract multiple electrode unit models from the device model according to the grid scale corresponding to the grid division to form an equivalent model of the surface electrode; each of the electrode unit models includes a model of the electrode finger and a target piezoelectric area corresponding to the model of the electrode finger; the target piezoelectric area is the top area of ​​the model of the piezoelectric film, and the width of the target piezoelectric area is greater than the width of the model of the electrode finger; the thickness of the target piezoelectric area is greater than or equal to one of the grid scales.

[0150] In a feasible implementation manner, the target piezoelectric region includes a first region, a second region, and a third region sequentially connected along the first direction;

[0151] The pattern of the electrode finger includes a first side and a second side that are opposite;

[0152] The first area is located on the first side; the third area is located on the second side;

[0153] The width of the second region is equal to the width of the electrode finger model, and the width of the first region is equal to the width of the third region;

[0154] The sizes of the plurality of electrode unit models are equal.

[0155] In a feasible implementation manner, the device further includes:

[0156] A first determination module, used to determine the equivalent thermal resistance of each electrode unit model;

[0157] The second determination module is used to determine the thermal simulation result of the surface electrode based on the equivalent thermal resistance of each electrode unit model in the multiple electrode unit models.

[0158] In a feasible implementation manner, the first determination module is used to obtain a three-dimensional coordinate system of the device model; the three-dimensional coordinate system includes a first coordinate direction, a second coordinate direction and a third coordinate direction which are perpendicular to each other; the first coordinate direction is the first direction; the second coordinate direction is the length direction of the electrode finger; the third coordinate direction is the thickness direction of the electrode finger;

[0159] For each of the electrode unit models, based on the size parameters and thermal conductivity of the electrode finger model, the size parameters and thermal conductivity of the target piezoelectric region, and the wavelength of the device model, respectively determine a first equivalent thermal resistance of the electrode unit model along the first coordinate direction, a second equivalent thermal resistance of the electrode unit model along the second coordinate direction, and a third equivalent thermal resistance of the electrode unit model along the third coordinate direction;

[0160] An equivalent thermal resistance of the electrode unit model is determined based on the first equivalent thermal resistance, the second equivalent thermal resistance, and the third equivalent thermal resistance.

[0161] In a feasible implementation manner, the size parameters of the electrode finger model include the width, cross-sectional area and thickness of the electrode finger model; the size parameters of the target piezoelectric region include the thickness and cross-sectional area of ​​the target piezoelectric region;

[0162] The first determination module is used to determine the ratio between the thickness of the electrode finger model and the thickness of the target piezoelectric region as a first proportionality coefficient;

[0163] Determining a ratio of a width of the electrode finger model to a half wavelength of the device model as a second proportionality coefficient;

[0164] The first equivalent thermal resistance, the second equivalent thermal resistance, and the third equivalent thermal resistance are determined based on the first proportionality coefficient, the second proportionality coefficient, the thermal conductivity of the model of the electrode fingers, and the thermal conductivity of the target piezoelectric region, respectively.

[0165] In a feasible implementation manner, the first equivalent thermal resistance is expressed as:

[0166]

[0167] Wherein, κ1 represents the thermal conductivity of the model of the electrode finger; κ2 represents the thermal conductivity of the target piezoelectric region; α represents the first proportionality coefficient; and duty represents the second proportionality coefficient;

[0168] The second equivalent thermal resistance is expressed as:

[0169]

[0170] The third equivalent thermal resistance is expressed as:

[0171]

[0172] In a feasible implementation manner, the thickness of the target piezoelectric region is less than or equal to 1 / 10 of the thickness of the model of the piezoelectric film.

[0173] It should be noted that the device provided in the above embodiment, when implementing its functions, is only illustrated by the division of the above functional modules. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In addition, the device and method embodiments provided in the above embodiment belong to the same concept, and the specific implementation process is detailed in the method embodiment, which will not be repeated here.

[0174] An embodiment of the present application provides an electronic device, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement any one of the thermal simulation modeling methods for surface electrodes provided in the above method embodiments.

[0175] The memory can be used to store software programs and modules. The processor executes various functional applications and data processing by running the software programs and modules stored in the memory. The memory can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, application programs required for functions, etc.; the data storage area can store data created according to the use of the device, etc. In addition, the memory can include a high-speed random access memory and can also include a non-volatile memory, such as at least one disk storage device, a flash memory device, or other volatile solid-state storage devices. Accordingly, the memory can also include a memory controller to provide the processor with access to the memory.

[0176] An embodiment of the present application also provides a computer-readable storage medium, which can be set in an electronic device to store at least one instruction or at least one program related to implementing a thermal simulation modeling method for a surface electrode. The at least one instruction or the at least one program is loaded and executed by the processor to implement any one of the thermal simulation modeling methods for a surface electrode provided in the above method embodiments.

[0177] The embodiment of the present application also provides a computer program product or a computer program, which includes computer instructions stored in a computer-readable storage medium. The processor of the electronic device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the electronic device executes any one of the thermal simulation modeling methods for surface electrodes provided in the above method embodiments.

[0178] Optionally, in this embodiment, the above-mentioned storage medium may include but is not limited to: a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk, and other media that can store program codes.

[0179] It should be noted that the above-mentioned sequence of the embodiments of the present application is for description only and does not represent the advantages and disadvantages of the embodiments. The above-mentioned specific embodiments of this specification are described. Other embodiments are within the scope of the attached claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0180] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0181] A person skilled in the art will understand that all or part of the steps to implement the above embodiments may be accomplished by hardware or by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a disk or an optical disk, etc.

[0182] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A thermal simulation modeling method for a surface electrode, characterized in that: include: Acquiring a device model of a surface acoustic wave device; the surface acoustic wave device comprises a piezoelectric film and a surface electrode located on the piezoelectric film; The surface electrode comprises an interdigitated electrode; the interdigitated electrode comprises a plurality of electrode fingers arranged in a staggered manner along a first direction; the first direction is a width direction of the electrode fingers; Meshing the device model; A plurality of electrode unit models are extracted from the device model according to a grid scale corresponding to the grid division to form an equivalent model of the surface electrode; each of the electrode unit models includes a model of the electrode finger and a target piezoelectric region corresponding to the model of the electrode finger; the target piezoelectric region is the top region of the model of the piezoelectric film, and the width of the target piezoelectric region is greater than the width of the model of the electrode finger; the thickness of the target piezoelectric region is greater than or equal to one of the grid scales.

2. The method according to claim 1, characterized in that The target piezoelectric region includes a first region, a second region, and a third region sequentially connected along the first direction; The pattern of the electrode finger includes a first side and a second side that are opposite; The first area is located on the first side; The third area is located on the second side; The width of the second region is equal to the width of the electrode finger model, and the width of the first region is equal to the width of the third region; The sizes of the plurality of electrode unit models are equal.

3. The method according to claim 2, characterized in that After extracting a plurality of electrode unit models from the device model according to the grid scale corresponding to the grid division to form an equivalent model of the surface electrode, the method further includes: Determining the equivalent thermal resistance of each of the electrode unit models; Based on the equivalent thermal resistance of each electrode unit model in the plurality of electrode unit models, a thermal simulation result of the surface electrode is determined.

4. The method according to claim 3, characterized in that: Determining the equivalent thermal resistance of each electrode unit model includes: Acquire a three-dimensional coordinate system of the device model; the three-dimensional coordinate system includes a first coordinate direction, a second coordinate direction and a third coordinate direction which are perpendicular to each other; the first coordinate direction is the first direction; the second coordinate direction is the length direction of the electrode finger; the third coordinate direction is the thickness direction of the electrode finger; For each of the electrode unit models, based on the size parameters and thermal conductivity of the electrode finger model, the size parameters and thermal conductivity of the target piezoelectric region, and the wavelength of the device model, respectively determine a first equivalent thermal resistance of the electrode unit model along the first coordinate direction, a second equivalent thermal resistance of the electrode unit model along the second coordinate direction, and a third equivalent thermal resistance of the electrode unit model along the third coordinate direction; An equivalent thermal resistance of the electrode unit model is determined based on the first equivalent thermal resistance, the second equivalent thermal resistance, and the third equivalent thermal resistance.

5. The method according to claim 4, characterized in that The size parameters of the electrode finger model include the width, cross-sectional area and thickness of the electrode finger model; the size parameters of the target piezoelectric region include the thickness and cross-sectional area of ​​the target piezoelectric region; The method of determining the first equivalent thermal resistance of the electrode unit model along the first coordinate direction, the second equivalent thermal resistance of the electrode unit model along the second coordinate direction, and the third equivalent thermal resistance of the electrode unit model along the third coordinate direction based on the size parameters and thermal conductivity of the model of the electrode finger, the size parameters and thermal conductivity of the target piezoelectric region, and the wavelength of the device model, respectively, includes: determining a ratio between a thickness of the electrode finger model and a thickness of the target piezoelectric region as a first proportionality coefficient; Determining a ratio of a width of the electrode finger model to a half wavelength of the device model as a second proportionality coefficient; The first equivalent thermal resistance, the second equivalent thermal resistance, and the third equivalent thermal resistance are determined based on the first proportionality coefficient, the second proportionality coefficient, the thermal conductivity of the model of the electrode fingers, and the thermal conductivity of the target piezoelectric region, respectively.

6. The method according to claim 5, characterized in that The first equivalent thermal resistance is expressed as: Wherein, κ1 represents the thermal conductivity of the model of the electrode finger; κ2 represents the thermal conductivity of the target piezoelectric region; α represents the first proportionality coefficient; duty represents the second proportionality coefficient; The second equivalent thermal resistance is expressed as: The third equivalent thermal resistance is expressed as:

7. The method according to any one of claims 1 to 6, characterized in that ,, the thickness of the target piezoelectric area is less than or equal to 1 / 10 of the thickness of the model of the piezoelectric film.

8. A thermal simulation modeling device, characterized in that: The device comprises: An acquisition module, used for acquiring a device model of a surface acoustic wave device; the surface acoustic wave device comprises a piezoelectric film and a surface electrode located on the piezoelectric film; the surface electrode comprises an interdigitated electrode; the interdigitated electrode comprises a plurality of electrode fingers arranged in a staggered manner along a first direction; the first direction is a width direction of the electrode fingers; A meshing module, used for meshing the device model; An extraction module is used to extract multiple electrode unit models from the device model according to the grid scale corresponding to the grid division to form an equivalent model of the surface electrode; each of the electrode unit models includes a model of the electrode finger and a target piezoelectric area corresponding to the model of the electrode finger; the target piezoelectric area is the top area of ​​the model of the piezoelectric film, and the width of the target piezoelectric area is greater than the width of the model of the electrode finger; the thickness of the target piezoelectric area is greater than or equal to one of the grid scales.

9. An electronic device, characterized in that: It comprises a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement the thermal simulation modeling method of the surface electrode according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by a processor to implement the thermal simulation modeling method for a surface electrode according to any one of claims 1 to 7.

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