Cleaning effect evaluation method and system for sapphire substrate wafer

Abstract

The invention relates to the technical field of wafer cleaning analysis, in particular to a cleaning effect evaluation method and system for a sapphire substrate wafer, and the method comprises the steps: analyzing the metal residue cleaning effect of the sapphire substrate wafer through obtaining metal residue data; meanwhile, acquiring stain residue data to analyze the stain residue cleaning effect of the sapphire substrate wafer; evaluating the cleaning effect of the sapphire substrate wafer according to the analysis result of the metal residue cleaning effect and the analysis result of the stain residue cleaning effect; according to the evaluation result and preset cleaning parameter data, constructing a sapphire substrate wafer cleaning effect prediction model, and predicting the cleaning effect of the to-be-cleaned sapphire substrate wafer; and resetting the preset cleaning parameters of the sapphire substrate wafer according to the prediction result. According to the method, the overall cleaning effect of the sapphire substrate wafer can be fully reflected, an existing cleaning effect evaluation method is optimized, and then the performance and reliability of a final device are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer cleaning analysis, and in particular to a cleaning effect evaluation method and system for sapphire substrate wafers. Background Art

[0002] Sapphire substrate wafers, as an indispensable cornerstone material in semiconductor technology and optoelectronics industry, have shown broad application prospects in many high-tech fields due to their excellent physical properties and chemical stability. However, during the preparation and processing of sapphire substrates, the wafer surface is often subject to a series of unavoidable contaminations, such as particles in the air, organic matter remaining during the processing, and metal ions and other pollutants from the equipment, environment or process itself, which not only affect the quality of the wafer, but also directly affect the performance and reliability of the final device.

[0003] Among the many contaminants in sapphire substrate wafers, metal residues are undoubtedly one of the most destructive factors. On the one hand, metal ions will be introduced into the device as impurities, interfering with the normal transport process of carriers, resulting in a decrease in carrier mobility and an increase in the resistance of the device, which in turn affects its electrical properties, such as the shift of key parameters such as current density and threshold voltage, greatly reducing the device's working efficiency and energy consumption ratio. On the other hand, metal ions may also become recombination centers and promote the occurrence of non-radiative recombination processes, which will not only significantly reduce the luminous efficiency and light output power of optoelectronic devices, but also increase the heat dissipation of the device, accelerate the aging process of the device, and shorten its service life.

[0004] However, when analyzing the cleaning effect of sapphire substrate wafers, the existing technology often focuses on analyzing the cleaning effect of particle pollutants and organic residues, but ignores the impact of metal residues on the sapphire substrate wafer on the cleaning effect evaluation. At the same time, the existing technology only evaluates the cleaning effect of pollutants on the wafer surface through simple image analysis, but does not consider the impact of the attachment form and penetration depth of metal ions on the wafer surface on the cleaning effect. Therefore, the existing cleaning effect evaluation method is relatively one-sided and cannot fully reflect the overall cleaning effect of sapphire substrate wafers; this tendency of the existing technology not only limits the comprehensive optimization of the cleaning process, but also potentially weakens the performance and reliability of the final device.

[0005] In order to solve these problems, the present application designs a cleaning effect evaluation method and system for sapphire substrate wafers. Summary of the invention

[0006] The object of the present invention is to provide a cleaning effect evaluation method and system for sapphire substrate wafers. The cleaning effect evaluation method for sapphire substrate wafers provided by the embodiment of the present invention can fully reflect the overall cleaning effect of sapphire substrate wafers, optimize the existing cleaning effect evaluation method, and thus improve the performance and reliability of the final device.

[0007] The present invention is achieved in that: In a first aspect, the present invention provides a method for evaluating the cleaning effect of a sapphire substrate wafer, comprising the following steps: S1. Obtaining metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously obtaining preset cleaning parameter data of multiple sapphire substrate wafers in history; S2, importing the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, importing the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; S3. Evaluate the cleaning effect of the sapphire substrate wafer according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect; S4. Constructing a sapphire substrate wafer cleaning effect prediction model according to the cleaning effect evaluation result of the sapphire substrate wafer and the preset cleaning parameter data, so as to predict the cleaning effect of the sapphire substrate wafer to be cleaned; S5. Reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned.

[0008] Preferably, based on the above scheme, step S2 includes the following specific steps: S21, extracting metal residue data of the sapphire substrate wafer; wherein the metal residue data includes metal residue data before cleaning and metal residue data after cleaning; S22, importing the metal residue data before cleaning and the metal residue data after cleaning of the sapphire substrate wafer into a metal residue cleaning effect coefficient calculation formula to calculate the metal residue cleaning effect coefficient of the sapphire substrate wafer; the metal residue cleaning effect coefficient calculation formula is: ; Wherein, JS represents the metal residue cleaning effect coefficient of the sapphire substrate wafer, G is the mass of the sapphire substrate wafer after cleaning in the metal residue data after cleaning; S represents the surface area of ​​the sapphire substrate wafer; Ai represents the concentration of the i-th residual metal element before cleaning obtained by X-ray fluorescence spectroscopy analysis in the metal residue data before cleaning; Bi represents the concentration of the i-th residual metal element after cleaning obtained by X-ray fluorescence spectroscopy analysis in the metal residue data after cleaning; n represents the number of residual metal elements obtained by X-ray fluorescence spectroscopy analysis, and i is any one of 1 to n.

[0009] Preferably, based on the above solution, step S2 further includes the following specific steps: S23, extracting the stain residue data of the sapphire substrate wafer, wherein the stain residue data includes the stain residue data before cleaning and the stain residue data after cleaning; S24, importing the stain residue data before cleaning and the stain residue data after cleaning into a stain residue cleaning effect coefficient calculation formula to calculate the stain residue cleaning effect coefficient of the sapphire substrate wafer; the stain residue cleaning effect coefficient calculation formula is: ; Wherein, WZ represents the stain residue cleaning effect coefficient of the sapphire substrate wafer, Sw represents the area of ​​organic pollutants obtained by analyzing the sapphire substrate wafer image before cleaning in the stain residue data before cleaning, Swc represents the area of ​​organic pollutants obtained by analyzing the sapphire substrate wafer image after cleaning in the stain residue data after cleaning, Nk represents the number of particles attached to the sapphire substrate wafer before cleaning in the stain residue data before cleaning, and Nkc represents the number of particles attached to the sapphire substrate wafer after cleaning in the stain residue data after cleaning, wherein, represents the impact weight of organic pollutants, .

[0010] Preferably, based on the above solution, step S3 includes the following specific contents: S31, obtaining the calculated metal residue cleaning effect coefficient and stain residue cleaning effect coefficient of the sapphire substrate wafer; S32, introducing the metal residue cleaning effect coefficient and the stain residue cleaning effect coefficient into a cleaning effect coefficient calculation formula to calculate the cleaning effect coefficient of the sapphire substrate wafer; the cleaning effect coefficient calculation formula is: ; Where, QX represents the cleaning effect coefficient of the sapphire substrate wafer, a and b represent the metal residue influence ratio coefficient and the stain residue influence ratio coefficient, respectively, a+b=1; S33, obtaining the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history.

[0011] Preferably, based on the above solution, step S4 includes the following specific steps: S41, obtaining sapphire substrate wafer sample data for training a sapphire substrate wafer cleaning effect prediction model, wherein the sapphire substrate wafer sample data includes the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history, and also includes the surface areas of multiple sapphire substrate wafers in history, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data; wherein the preset cleaning parameter data includes the preset cleaning time, the preset cleaning solution temperature, and the preset cleaning solution pH value; S42, dividing the sapphire substrate wafer sample data used for training the sapphire substrate wafer cleaning effect prediction model into a wafer sample training set and a wafer sample test set, constructing a regression network model, taking the surface area of ​​the sapphire substrate wafer in the wafer sample training set, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data as the input of the regression network model, taking the cleaning effect coefficient of the sapphire substrate wafer in the wafer sample training set as the output of the regression network model, training the regression network model to obtain an initial regression network model; using an average error algorithm to evaluate the model effect of the initial regression network model, and selecting the corresponding initial regression network model that is greater than or equal to the preset evaluation value as the sapphire substrate wafer cleaning effect prediction model; S43, obtaining the surface area of ​​the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data, inputting the surface area of ​​the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data into a sapphire substrate wafer cleaning effect prediction model, and outputting the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned.

[0012] Preferably, based on the above solution, step S5 includes the following specific contents: The predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned is obtained, and a cleaning effect threshold is preset. When the cleaning effect coefficient of the sapphire substrate wafer to be cleaned is less than the cleaning effect threshold, an early warning for resetting the preset cleaning parameters is sent to the operator.

[0013] In a second aspect, the present invention provides a cleaning effect evaluation system for a sapphire substrate wafer, comprising: A data acquisition module is used to acquire metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously acquire preset cleaning parameter data of multiple sapphire substrate wafers in history; The residual cleaning effect analysis module is used to import the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, the stain residue data is imported into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; A cleaning effect evaluation module, used to evaluate the cleaning effect of the sapphire substrate wafer according to the metal residue cleaning effect analysis results and the stain residue cleaning effect analysis results; A cleaning effect prediction module is used to construct a sapphire substrate wafer cleaning effect prediction model based on the cleaning effect evaluation results of the sapphire substrate wafer and the preset cleaning parameter data, so as to predict the cleaning effect of the sapphire substrate wafer to be cleaned; A cleaning parameter reset module, used to reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned; A control module is used to control the operation of the data acquisition module, the residual cleaning effect analysis module, the cleaning effect evaluation module, the cleaning effect prediction module and the cleaning parameter resetting module.

[0014] In a third aspect, the present invention provides an electronic device, comprising: a processor and a memory, wherein the memory stores a computer program that can be called by the processor; the processor executes a cleaning effect evaluation method for sapphire substrate wafers by calling the computer program stored in the memory.

[0015] In a fourth aspect, the present invention provides a computer-readable storage medium storing instructions, which, when executed on a computer, enable the computer to execute a method for evaluating the cleaning effect of a sapphire substrate wafer.

[0016] Compared with the prior art, the present invention has the following advantages and beneficial effects: The present invention analyzes the metal residue cleaning effect of a sapphire substrate wafer by acquiring metal residue data; simultaneously acquires stain residue data to analyze the stain residue cleaning effect of a sapphire substrate wafer; evaluates the cleaning effect of a sapphire substrate wafer according to the metal residue cleaning effect analysis results and the stain residue cleaning effect analysis results; constructs a sapphire substrate wafer cleaning effect prediction model according to the evaluation results and preset cleaning parameter data to predict the cleaning effect of a sapphire substrate wafer to be cleaned; and resets the preset cleaning parameters of a sapphire substrate wafer according to the prediction results. The present invention can fully reflect the overall cleaning effect of a sapphire substrate wafer, optimize the existing cleaning effect evaluation method, and thereby improve the performance and reliability of the final device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings: Figure 1 It is a schematic diagram of the overall process of the cleaning effect evaluation method for a sapphire substrate wafer of the present invention; Figure 2 A flow chart of the preparation of a sapphire substrate wafer in the cleaning effect evaluation method for a sapphire substrate wafer of the present invention; Figure 3 It is a schematic structural diagram of the cleaning effect evaluation system for sapphire substrate wafers of the present invention. DETAILED DESCRIPTION

[0018] The technical solution of the present invention is described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present invention and the specific features in the embodiments are detailed descriptions of the technical solution of the present invention, rather than limitations on the technical solution of the present invention. The embodiments of the present invention and the technical features in the embodiments may be combined with each other unless there is a conflict.

[0019] Example 1 like Figure 2 As shown, an embodiment of the present invention provides a flow chart for preparing a sapphire substrate wafer. In the prior art process of preparing a sapphire substrate wafer, it is easy for the sapphire substrate wafer to produce a large amount of metal residues at different preparation stages. The general preparation process of a sapphire substrate wafer includes the following stages: During the slicing phase, the crystal rod is cut into thin slices using high-precision cutting equipment. These slices will become the basis for subsequent sapphire substrate wafers. During this process, if the cutting equipment or blade contains metal impurities, or if a metal-containing coolant is used during the cutting process, metal residue may result.

[0020] In the chamfering stage, the edges of the sliced ​​sapphire slices are ground to make them smoother to avoid stress concentration or cracking during subsequent processing. Abrasives are usually used for grinding in this stage. If the abrasives used contain metal impurities, metal residues may remain on the subsequent wafers.

[0021] During the grinding stage, the sapphire slices are finely polished by grinding equipment to remove the tiny scratches and unevenness caused by slicing and chamfering. If the grinding fluid and grinding disc used in the grinding process contain metal impurities, it may cause metal residue.

[0022] During the annealing stage, the ground sapphire slice is heat treated at high temperature to eliminate its internal stress and improve its stability and reliability.

[0023] During the waxing stage, a layer of wax is applied to the surface of the sliced ​​or ground sapphire slice to facilitate subsequent processing and treatment.

[0024] In the copper polishing stage, the sapphire sheet is polished using a copper disc and abrasives to further remove scratches and unevenness and improve surface quality. The copper polishing stage is one of the stages most likely to cause metal residue. Because the copper disc is in direct contact with the sapphire sheet, when the copper disc contains metal impurities or is worn during the polishing process to produce metal particles, the metal elements will remain on the sapphire sheet.

[0025] During the soft polishing stage, the sapphire slices are further polished by using softer polishing materials and finer abrasives to achieve higher surface quality requirements.

[0026] In the cleaning stage, the sapphire wafer is cleaned using deionized water, organic solvents and other cleaning agents to remove impurities and contaminants generated during the grinding and polishing process to obtain the final sapphire substrate wafer.

[0027] In the above preparation process, the cleaning stage, as a key link in the sapphire substrate wafer production process, is of great importance. This stage aims to use high-purity deionized water, selected organic solvents and other efficient cleaning agents to deeply clean the ground and polished sapphire wafers and thoroughly remove all kinds of impurities and contaminants generated during the processing. These impurities and contaminants may include abrasive particles, polishing agent residues, grease, dust and other tiny contaminants, all of which may have an adverse effect on the final quality and performance of the sapphire substrate wafer. However, the existing technology mainly relies on methods such as image analysis and particle counting when evaluating the cleaning effect. Although these methods can intuitively reflect the cleanliness of the surface of the sapphire wafer after cleaning, as well as the number and size distribution of residual particles, they ignore the potential problem of metal residue to a certain extent. Metal residues, especially those metal ions or particles that exist in trace forms, are often easily overlooked because of their small size and are not easily captured directly by conventional detection methods. However, metal residues have a profound impact on the performance of sapphire substrate wafers. Metal elements may be introduced into the wafer as impurities, affecting the electrical, optical or thermal properties of the crystal; they may also form tiny defects or contamination points on the wafer surface, reducing the overall quality and reliability of the wafer. Therefore, in the cleaning stage, in addition to analyzing the cleaning effect of general organic matter and particulate matter, it is also necessary to analyze the cleaning effect of the residual metal elements.

[0028] Therefore, this embodiment provides a cleaning effect evaluation method for a sapphire substrate wafer, such as Figure 1 As shown, the method specifically comprises the following steps: S1. Obtaining metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously obtaining preset cleaning parameter data of multiple sapphire substrate wafers in history; S2, importing the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, importing the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; S3. Evaluate the cleaning effect of the sapphire substrate wafer according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect; S4. Constructing a sapphire substrate wafer cleaning effect prediction model according to the cleaning effect evaluation result of the sapphire substrate wafer and the preset cleaning parameter data, so as to predict the cleaning effect of the sapphire substrate wafer to be cleaned; S5. Reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned.

[0029] As a preferred technical solution of the present invention, step S2 converts the cleaning effect that was originally difficult to measure intuitively into a specific numerical value by introducing the metal residue cleaning effect coefficient and the stain residue cleaning effect coefficient. The metal residue cleaning effect coefficient comprehensively evaluates the cleaning effect of the metal residue on the sapphire substrate wafer by considering factors such as the concentration change of the metal residue before and after cleaning, the quality and surface area of ​​the sapphire substrate wafer, etc.; the stain residue cleaning effect coefficient quantifies the cleaning effect of the stain residue on the sapphire substrate wafer by comparing the area of ​​organic pollutants and the number of particles before and after cleaning, thereby improving the objectivity and accuracy of the cleaning effect evaluation. In this embodiment, step S2 includes the following specific steps: S21, extracting metal residue data of the sapphire substrate wafer; wherein the metal residue data includes metal residue data before cleaning and metal residue data after cleaning; S22, importing the metal residue data before cleaning and the metal residue data after cleaning of the sapphire substrate wafer into a metal residue cleaning effect coefficient calculation formula to calculate the metal residue cleaning effect coefficient of the sapphire substrate wafer; the metal residue cleaning effect coefficient calculation formula is: ; Wherein, JS represents the metal residue cleaning effect coefficient of the sapphire substrate wafer, G is the mass of the sapphire substrate wafer after cleaning in the metal residue data after cleaning; S represents the surface area of ​​the sapphire substrate wafer; Ai represents the concentration of the i-th residual metal element before cleaning obtained by X-ray fluorescence spectroscopy analysis in the metal residue data before cleaning; Bi represents the concentration of the i-th residual metal element after cleaning obtained by X-ray fluorescence spectroscopy analysis in the metal residue data after cleaning; n represents the number of residual metal elements obtained by X-ray fluorescence spectroscopy analysis, and i is any one of 1 to n.

[0030] As a preferred technical solution of the present invention, step S2 also includes the following specific steps: S23, extracting the stain residue data of the sapphire substrate wafer, wherein the stain residue data includes the stain residue data before cleaning and the stain residue data after cleaning; S24, importing the stain residue data before cleaning and the stain residue data after cleaning into a stain residue cleaning effect coefficient calculation formula to calculate the stain residue cleaning effect coefficient of the sapphire substrate wafer; the stain residue cleaning effect coefficient calculation formula is: ; Wherein, WZ represents the stain residue cleaning effect coefficient of the sapphire substrate wafer, Sw represents the area of ​​organic pollutants obtained by analyzing the sapphire substrate wafer image before cleaning in the stain residue data before cleaning, Swc represents the area of ​​organic pollutants obtained by analyzing the sapphire substrate wafer image after cleaning in the stain residue data after cleaning, Nk represents the number of particles attached to the sapphire substrate wafer before cleaning in the stain residue data before cleaning, and Nkc represents the number of particles attached to the sapphire substrate wafer after cleaning in the stain residue data after cleaning, wherein, represents the impact weight of organic pollutants, .

[0031] As a preferred technical solution of the present invention, step S3 includes the following specific contents: S31, obtaining the calculated metal residue cleaning effect coefficient and stain residue cleaning effect coefficient of the sapphire substrate wafer; S32, introducing the metal residue cleaning effect coefficient and the stain residue cleaning effect coefficient into the cleaning effect coefficient calculation formula to calculate the cleaning effect coefficient of the sapphire substrate wafer; the cleaning effect coefficient calculation formula is: ; Where, QX represents the cleaning effect coefficient of the sapphire substrate wafer, a and b represent the metal residue influence ratio coefficient and the stain residue influence ratio coefficient, respectively, a+b=1; S33, obtaining the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history.

[0032] As a preferred technical solution of the present invention, step S4 further improves the accuracy and reliability of the cleaning effect evaluation by constructing a sapphire substrate wafer cleaning effect prediction model. The sapphire substrate wafer cleaning effect prediction model is obtained through training with a large amount of historical data, and can accurately predict the cleaning effect coefficient of the wafer to be cleaned. In this embodiment, by inputting the relevant data of the sapphire substrate wafer to be cleaned, the prediction result of the cleaning effect of the sapphire substrate wafer to be cleaned can be quickly obtained, thereby helping technicians to adjust the cleaning strategy in time and optimize the cleaning process. In this embodiment, step S4 includes the following specific steps: S41, obtaining sapphire substrate wafer sample data for training a sapphire substrate wafer cleaning effect prediction model, wherein the sapphire substrate wafer sample data includes the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history, and also includes the surface areas of multiple sapphire substrate wafers in history, metal residue data before cleaning, stain residue data before cleaning, and preset cleaning parameter data; wherein the preset cleaning parameter data includes a preset cleaning time, a preset cleaning solution temperature, and a preset cleaning solution pH value; S42, dividing the sapphire substrate wafer sample data used for training the sapphire substrate wafer cleaning effect prediction model into a wafer sample training set and a wafer sample test set, constructing a regression network model, taking the surface area of ​​the sapphire substrate wafer in the wafer sample training set, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data as the input of the regression network model, taking the cleaning effect coefficient of the sapphire substrate wafer in the wafer sample training set as the output of the regression network model, training the regression network model to obtain an initial regression network model; using an average error algorithm to evaluate the model effect of the initial regression network model, and selecting the corresponding initial regression network model that is greater than or equal to the preset evaluation value as the sapphire substrate wafer cleaning effect prediction model; S43, obtaining the surface area of ​​the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data, inputting the surface area of ​​the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data into a sapphire substrate wafer cleaning effect prediction model, and outputting the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned.

[0033] As a preferred technical solution of the present invention, step S5 includes the following specific contents: The predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned is obtained, and a cleaning effect threshold is preset. When the cleaning effect coefficient of the sapphire substrate wafer to be cleaned is less than the cleaning effect threshold, an alert for resetting the preset cleaning parameters is sent to the operator. It should be noted that the value determination method of the organic pollutant impact weight, the metal residue impact ratio coefficient, the stain residue impact ratio coefficient and the cleaning effect threshold is as follows: 2000 sets of metal residue data and stain residue data and preset cleaning parameter data of sapphire substrate wafers are obtained, and the metal residue data, the stain residue data and the preset cleaning parameter data are imported into the cleaning effect coefficient calculation formula for calculation to obtain the cleaning effect coefficient; 2000 sets of cleaning effect judgment results of sapphire substrate wafers are obtained, and the cleaning effect coefficients and cleaning effect judgment results of 2000 sets of sapphire substrate wafers are imported into the fitting software, and the corresponding organic pollutant impact weight, metal residue impact ratio coefficient, stain residue impact ratio coefficient and cleaning effect threshold value that meet the highest cleaning effect judgment accuracy are output.

[0034] Example 2 like Figure 3 As shown, this embodiment provides a cleaning effect evaluation system for a sapphire substrate wafer, comprising: A data acquisition module is used to acquire metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously acquire preset cleaning parameter data of multiple sapphire substrate wafers in history; The residual cleaning effect analysis module is used to import the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, the stain residue data is imported into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; A cleaning effect evaluation module, used to evaluate the cleaning effect of the sapphire substrate wafer according to the metal residue cleaning effect analysis results and the stain residue cleaning effect analysis results; A cleaning effect prediction module is used to construct a sapphire substrate wafer cleaning effect prediction model based on the cleaning effect evaluation results of the sapphire substrate wafer and the preset cleaning parameter data, so as to predict the cleaning effect of the sapphire substrate wafer to be cleaned; A cleaning parameter reset module, used to reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned; The control module is used to control the operation of the data acquisition module, the residual cleaning effect analysis module, the cleaning effect evaluation module, the cleaning effect prediction module and the cleaning parameter reset module.

[0035] The above-mentioned parameters in the cleaning effect evaluation system for sapphire substrate wafers of the present invention and the steps for each unit module to achieve corresponding functions can refer to the parameters and steps in the embodiment of the cleaning effect evaluation method for sapphire substrate wafers mentioned above, and will not be repeated here.

[0036] Example 3 An electronic device according to an embodiment of the present invention comprises: a processor and a memory, wherein the memory stores a computer program that can be called by the processor, and the processor executes a cleaning effect evaluation method for sapphire substrate wafers by calling the computer program stored in the memory. It should be noted that: all computer programs of the cleaning effect evaluation method for sapphire substrate wafers are implemented using C language, wherein the data acquisition module, the residual cleaning effect analysis module, the cleaning effect evaluation module, the cleaning effect prediction module, the cleaning parameter reset module and the control module are all controlled by a remote server.

[0037] Example 4 This embodiment provides a computer-readable storage medium having a rewritable computer program stored thereon; When the computer program is executed on a computer device, the computer device is caused to execute the above-mentioned cleaning effect evaluation method for sapphire substrate wafers.

[0038] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0039] The preferred embodiments of the present invention disclosed above are only used to help illustrate the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to the specific implementation methods described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A method for evaluating the cleaning effect of a sapphire substrate wafer, characterized in that: The steps include: S1. Obtaining metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously obtaining preset cleaning parameter data of multiple sapphire substrate wafers in history; S2, importing the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, importing the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; S3. Evaluate the cleaning effect of the sapphire substrate wafer according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect; S4. Constructing a sapphire substrate wafer cleaning effect prediction model according to the cleaning effect evaluation result of the sapphire substrate wafer and the preset cleaning parameter data, so as to predict the cleaning effect of the sapphire substrate wafer to be cleaned; S5. Reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned.

2. The cleaning effect evaluation method for a sapphire substrate wafer according to claim 1, characterized in that: The step S2 comprises the following specific steps: S21, extracting metal residue data of the sapphire substrate wafer; wherein the metal residue data includes metal residue data before cleaning and metal residue data after cleaning; S22, importing the metal residue data before cleaning and the metal residue data after cleaning of the sapphire substrate wafer into a metal residue cleaning effect coefficient calculation formula to calculate the metal residue cleaning effect coefficient of the sapphire substrate wafer; the metal residue cleaning effect coefficient calculation formula is: ； Wherein, JS represents the metal residue cleaning effect coefficient of the sapphire substrate wafer, G is the mass of the sapphire substrate wafer after cleaning in the metal residue data after cleaning; S represents the surface area of ​​the sapphire substrate wafer; Ai represents the concentration of the i-th residual metal element before cleaning obtained by X-ray fluorescence spectroscopy analysis in the metal residue data before cleaning; Bi represents the concentration of the i-th residual metal element after cleaning obtained by X-ray fluorescence spectroscopy analysis in the metal residue data after cleaning; n represents the number of residual metal elements obtained by X-ray fluorescence spectroscopy analysis, and i is any one of 1 to n.

3. The cleaning effect evaluation method for a sapphire substrate wafer according to claim 2, characterized in that: The step S2 also includes the following specific steps: S23, extracting the stain residue data of the sapphire substrate wafer, wherein the stain residue data includes the stain residue data before cleaning and the stain residue data after cleaning; S24, importing the stain residue data before cleaning and the stain residue data after cleaning into a stain residue cleaning effect coefficient calculation formula to calculate the stain residue cleaning effect coefficient of the sapphire substrate wafer; the stain residue cleaning effect coefficient calculation formula is: ； Wherein, WZ represents the stain residue cleaning effect coefficient of the sapphire substrate wafer, Sw represents the area of ​​organic pollutants obtained by analyzing the sapphire substrate wafer image before cleaning in the stain residue data before cleaning, Swc represents the area of ​​organic pollutants obtained by analyzing the sapphire substrate wafer image after cleaning in the stain residue data after cleaning, Nk represents the number of particles attached to the sapphire substrate wafer before cleaning in the stain residue data before cleaning, and Nkc represents the number of particles attached to the sapphire substrate wafer after cleaning in the stain residue data after cleaning, wherein, represents the impact weight of organic pollutants, .

4. The cleaning effect evaluation method for a sapphire substrate wafer according to claim 3, characterized in that: The step S3 includes the following specific contents: S31, obtaining the calculated metal residue cleaning effect coefficient and stain residue cleaning effect coefficient of the sapphire substrate wafer; S32, introducing the metal residue cleaning effect coefficient and the stain residue cleaning effect coefficient into a cleaning effect coefficient calculation formula to calculate the cleaning effect coefficient of the sapphire substrate wafer; the cleaning effect coefficient calculation formula is: ； Where, QX represents the cleaning effect coefficient of the sapphire substrate wafer, a and b represent the metal residue influence ratio coefficient and the stain residue influence ratio coefficient, respectively, a+b=1; S33, obtaining the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history.

5. The cleaning effect evaluation method for a sapphire substrate wafer according to claim 4, characterized in that: The step S4 comprises the following specific steps: S41, obtaining sapphire substrate wafer sample data for training a sapphire substrate wafer cleaning effect prediction model, wherein the sapphire substrate wafer sample data includes the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history, and also includes the surface areas of multiple sapphire substrate wafers in history, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data; wherein the preset cleaning parameter data includes the preset cleaning time, the preset cleaning solution temperature, and the preset cleaning solution pH value; S42, dividing the sapphire substrate wafer sample data used for training the sapphire substrate wafer cleaning effect prediction model into a wafer sample training set and a wafer sample test set, constructing a regression network model, taking the surface area of ​​the sapphire substrate wafer in the wafer sample training set, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data as the input of the regression network model, taking the cleaning effect coefficient of the sapphire substrate wafer in the wafer sample training set as the output of the regression network model, training the regression network model to obtain an initial regression network model; using an average error algorithm to evaluate the model effect of the initial regression network model, and selecting the corresponding initial regression network model that is greater than or equal to the preset evaluation value as the sapphire substrate wafer cleaning effect prediction model; S43, obtaining the surface area of ​​the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data, inputting the surface area of ​​the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data into a sapphire substrate wafer cleaning effect prediction model, and outputting the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned.

6. The cleaning effect evaluation method for a sapphire substrate wafer according to claim 5, characterized in that: The step S5 includes the following specific contents: The predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned is obtained, and a cleaning effect threshold is preset. When the cleaning effect coefficient of the sapphire substrate wafer to be cleaned is less than the cleaning effect threshold, an early warning for resetting the preset cleaning parameters is sent to the operator.

7. A cleaning effect evaluation system for sapphire substrate wafers, which is implemented based on the cleaning effect evaluation method for sapphire substrate wafers according to any one of claims 1 to 6, characterized in that: The system comprises: A data acquisition module is used to acquire metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously acquire preset cleaning parameter data of multiple sapphire substrate wafers in history; The residual cleaning effect analysis module is used to import the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, the stain residue data is imported into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; A cleaning effect evaluation module, used to evaluate the cleaning effect of the sapphire substrate wafer according to the metal residue cleaning effect analysis results and the stain residue cleaning effect analysis results; A cleaning effect prediction module is used to construct a sapphire substrate wafer cleaning effect prediction model based on the cleaning effect evaluation results of the sapphire substrate wafer and the preset cleaning parameter data, so as to predict the cleaning effect of the sapphire substrate wafer to be cleaned; A cleaning parameter reset module, used to reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned; A control module is used to control the operation of the data acquisition module, the residual cleaning effect analysis module, the cleaning effect evaluation module, the cleaning effect prediction module and the cleaning parameter resetting module.

8. An electronic device comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the cleaning effect evaluation method for sapphire substrate wafers as described in any one of claims 1 to 6 by calling the computer program stored in the memory.

9. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are run on a computer, the computer is caused to execute the cleaning effect evaluation method for sapphire substrate wafers as described in any one of claims 1 to 6.

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