In-chip temperature measuring device of polycrystalline packaging chip and packaging chip

Abstract

The embodiment of the invention discloses an in-chip temperature measuring device of a polycrystalline packaging chip and the packaging chip, relates to the technical field of semiconductors, and is convenient for optimizing an in-chip temperature measuring structure of the chip. The device comprises a sensor module which is arranged in each crystal grain of a packaging chip and is configured to sense an electric signal representing the temperature of each crystal grain; wherein the crystal grains are mutually connected through wires, and each crystal grain comprises at least one main control crystal grain; and the main control crystal grain is integrated with a signal processing module, and the signal processing module is connected with the sensor module and is configured to receive the electric signal representing the temperature of each crystal grain and determine in-chip temperature information of the packaged chip according to the electric signal. As the sensor modules of all the crystal grains share one signal processor module for signal processing and temperature acquisition, the in-chip temperature measurement structure of the chip is convenient to optimize, and the structural complexity of the chip can be reduced. The method and the device are suitable for high-performance computing equipment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an on-chip temperature measuring device for a polycrystalline packaged chip and the packaged chip. Background Art

[0002] In chip packaging technology, the trend of integrating multiple dies to achieve different functions and performance is becoming increasingly obvious, such as 2.5D packaging, 3D packaging, etc. These dies generally use different process nodes to meet specific performance and power requirements. In this complex packaging form, temperature changes will directly affect the performance and reliability of the chip, so it is particularly important to monitor the internal temperature of each die.

[0003] See also Figure 1 In the related art, each die is generally equipped with an independent temperature measurement system or device to monitor and obtain the temperature information of each die in the chip. However, this design structure increases the complexity of the entire chip. Summary of the invention

[0004] In view of this, an embodiment of the present invention provides an on-chip temperature measurement device for a multi-crystalline packaged chip and a packaged chip, which, when applied to a chip, facilitates optimization of the on-chip temperature measurement structure of the chip.

[0005] In a first aspect, an embodiment of the present invention provides an on-chip temperature measurement device for a multi-crystalline packaged chip, the device comprising: A sensor module is disposed in each die of the packaged chip and is configured to sense an electrical signal representing the temperature of each die; wherein each die is interconnected by wires and includes at least one master control die; The master control die is integrated with a signal processing module, which is connected to the sensor module and configured to receive the electrical signal representing the temperature of each die and determine the on-chip temperature information of the packaged chip according to the electrical signal.

[0006] According to an embodiment of the present invention, the signal processing module is specifically configured to calculate the original temperature information of each grain according to the electrical signal after receiving the electrical signal representing the temperature of each grain; The original temperature information is calibrated according to a preset temperature calibration mechanism to obtain the on-chip temperature information of the packaged chip.

[0007] According to one embodiment of the present invention, the preset temperature calibration mechanism includes the correlation between the non-ideal factors introduced by the sensor module and the signal processing module in the process production and the temperature measurement error; wherein the non-ideal factors include: the temperature response characteristics of the sensor module and the mechanical stress generated during the packaging process, and the error factors of the signal processing module include: power supply noise and power supply fluctuation, as well as signal delay and signal nonlinearity.

[0008] According to an embodiment of the present invention, the preset temperature calibration mechanism is set corresponding to each die respectively, and is configured to specifically calibrate the electrical signal representing the temperature of each die respectively.

[0009] According to an embodiment of the present invention, the sensor module includes: at least one temperature sensor based on a transistor, a diode, a resistor or a capacitor.

[0010] According to an embodiment of the present invention, the temperature sensors are arranged at a plurality of different regions of each die.

[0011] According to an embodiment of the present invention, the signal processing module is connected to the sensor module of each die through a silicon medium, a through silicon via or a wire.

[0012] In a second aspect, the present invention also provides a packaged chip, including: At least two crystals, each of which is provided with a sensor module, each crystal is interconnected by wires, and at least one is a master control crystal; The main control chip is integrated with a signal processing module, and the signal processing module is connected to the sensor module.

[0013] According to an embodiment of the present invention, the sensor module includes: any one of a temperature sensor, a current sensor and a voltage sensor.

[0014] According to one embodiment of the present invention, the sensor module is a temperature sensor configured to sense an electrical signal representing the temperature of each die; The signal processing module is at least configured to receive the electrical signal representing the temperature of each die, and determine the on-chip temperature information of the packaged chip according to the electrical signal.

[0015] According to an embodiment of the present invention, the signal processing module is specifically configured to calculate the original temperature information of each grain according to the electrical signal after receiving the electrical signal representing the temperature of each grain; The original temperature information is calibrated according to a preset temperature calibration mechanism to obtain the on-chip temperature information of the packaged chip.

[0016] According to one embodiment of the present invention, the preset temperature calibration mechanism includes the correlation between the non-ideal factors introduced by the sensor module and the signal processing module in the process production and the temperature measurement error; wherein the non-ideal factors include: the temperature response characteristics of the sensor module and the mechanical stress generated during the packaging process, and the error factors of the signal processing module include: power supply noise and power supply fluctuation, as well as signal delay and signal nonlinearity.

[0017] According to an embodiment of the present invention, the preset temperature calibration mechanism is set corresponding to each die respectively, and is configured to specifically calibrate the electrical signal representing the temperature of each die respectively.

[0018] According to an embodiment of the present invention, the sensor module includes: at least one temperature sensor based on a transistor, a diode, a resistor or a capacitor.

[0019] According to an embodiment of the present invention, the temperature sensors are arranged at a plurality of different regions of each die.

[0020] According to an embodiment of the present invention, the signal processing module is connected to the sensor module of each die through a silicon medium, a through silicon via or a wire.

[0021] The on-chip temperature measurement device and packaged chip of a multi-crystalline packaged chip provided in an embodiment of the present invention treat the multi-crystalline packaged chip as a whole, set a signal processing module in the main control crystal grain, and connect it with the sensor modules in all the crystal grains. In this way, since the sensor modules of all the crystal grains share a signal processor module for signal processing and temperature acquisition, compared with the traditional method of setting a temperature measurement system or device separately in each crystal grain, when applied to the chip, it is convenient to optimize the on-chip temperature measurement structure of the chip, thereby reducing the structural complexity of the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 It is a schematic block diagram of the structure of an embodiment of an on-chip temperature measurement device for a multi-crystalline packaged chip in the related art; Figure 2 It is a schematic block diagram of the structure of an embodiment of an on-chip temperature measurement device for a multi-crystalline packaged chip of the present invention; Figure 3 It is a schematic block diagram of another embodiment of the structure of the on-chip temperature measurement device of the multi-crystalline packaged chip of the present invention; Figure 4 It is a schematic block diagram of the structure of another embodiment of the on-chip temperature measurement device of the multi-crystalline packaged chip of the present invention; Figure 5 This is a schematic block diagram of the structure of an embodiment of a packaged chip of the present invention; Figure 6 This is a schematic block diagram of the structure of another embodiment of the packaged chip of the present invention; Figure 7 This is a schematic block diagram of the structure of another embodiment of the packaged chip of the present invention. DETAILED DESCRIPTION

[0024] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0025] It should be clear that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] In some related technologies, chips in the form of multi-die packages (hereinafter referred to as multi-die package chips) usually integrate multiple dies to achieve different functions and performance requirements. These dies often use different process node technologies to meet specific design goals. When monitoring the internal temperature of the dies at these different process nodes, an independent temperature measurement system is generally configured for each die. This design not only increases the complexity of the entire chip. In addition, since each die needs to be designed, calibrated and tested separately, resource consumption and time costs are significantly increased, which prolongs the development cycle.

[0027] See also Figure 1 Each crystal grain is equipped with an independent temperature measurement system. Specifically, a signal processing module and a temperature sensor are arranged inside each crystal grain, which makes the chip structure using the temperature measurement system more complicated.

[0028] To this end, an embodiment of the present application provides a temperature measuring device in a multi-die packaged chip. By optimizing the structural design of the temperature measuring device, a unified signal processing module is introduced into the chip so that all the die share one signal processing module, thereby reducing the structural complexity of an independently set temperature measurement system, as well as reducing the development cost and time of separate design, calibration and testing.

[0029] See also Figure 2 or Figure 7 As shown, the embodiment of the present application provides an on-chip temperature measurement device 100 for a multi-crystal packaged chip, which can effectively monitor the internal temperature of each die to ensure performance stability and reliability in various application scenarios, and is suitable for high-performance computing devices. The device 100 includes: The sensor module 110 is arranged in each die of the packaged chip and is configured to sense the electrical signal representing the temperature of each die. Each die is interconnected by wires and includes at least one master control die 120. The sensor module can collect the temperature information of each die in real time and convert it into a corresponding electrical signal for subsequent processing. Among them, the sensor module 110 can adopt but is not limited to a resistance temperature sensor (RTD), and can also be a diode, a triode, a transistor or a capacitor, and the temperature can be indirectly inferred by measuring the resistance value. Alternatively, a capacitive temperature sensor made using CMOS technology, etc. The placement of the sensor module in each die should ensure that it will not affect the function or performance of the die. The specific setting position can consider the area near the heat distribution center or the key circuit, so as to collect more accurate temperature information of each die.

[0030] The main control die 120 is integrated with a signal processing module 121, which is connected to the sensor module 110 and configured to receive an electrical signal representing the temperature of each die and determine the internal temperature information of the multi-crystalline package chip according to the electrical signal. Specifically, the signal processing module 121 generates temperature data of each die by analyzing and calculating the received electrical signal.

[0031] The on-chip temperature measurement device for a multi-crystalline packaged chip provided in an embodiment of the present application treats the multi-crystalline packaged chip as a whole, sets a signal processing module in the main control crystal grain 120, and connects it with the sensor modules in all the crystal grains. In this way, since the sensor modules of all the crystal grains share a signal processor module for signal processing and temperature acquisition, compared with the traditional method of setting up a temperature measurement system or device separately in each crystal grain, when applied to the chip, it is convenient to optimize the on-chip temperature measurement structure of the chip, thereby reducing the structural complexity of the chip.

[0032] It is understandable that due to differences in device manufacturing processes, sensor drift, and environmental factors, the method of converting the electrical signal output by the sensor into a temperature value may result in some temperature measurement errors, thus affecting the reliability and performance of the chip. Especially in multi-crystalline packaged chips, if the temperature distribution of each grain is uneven, this error will be amplified, resulting in the accuracy of on-chip temperature monitoring being difficult to meet the requirements of high-performance chips.

[0033] Therefore, in order to effectively compensate and correct temperature measurement errors, see Figure 3 As shown, in some embodiments, the signal processing module is specifically configured to calculate the original temperature information of each grain according to the electrical signal after receiving the electrical signal characterizing the temperature of each grain; calibrate the original temperature information according to a preset temperature calibration mechanism to obtain the on-chip temperature information of the packaged chip.

[0034] Specifically, the chip can collect the electrical signal from the sensor module of each die through a preset circuit, such as an analog front-end circuit, including an amplifier, a filter, etc. The electrical signal may be a voltage, a current or a clock signal.

[0035] The signal processing module receives the digital signal converted by the ADC (analog-to-digital conversion module) and calculates the original temperature information of each die according to the pre-calibrated temperature-voltage / current / frequency conversion curve. Among them, this curve is a kind of preset temperature calibration mechanism, which can be obtained through experiments or simulations and stored in the memory inside the chip.

[0036] Specifically, the preset temperature calibration mechanism may be one or more of offset correction, gain correction, nonlinear correction and temperature drift correction, which is selected according to the specific factors causing the measurement error.

[0037] In this embodiment, the calibrated temperature information is the temperature information of the multi-crystal packaged chip, which can be stored inside the chip or output to an external system through an interface for monitoring or control. The output information can be the temperature value of each die, or statistical information such as the average temperature or maximum temperature of the entire chip obtained through subsequent calculations.

[0038] In some embodiments, the preset temperature calibration mechanism includes the correlation between the non-ideal factors introduced by the sensor module and the signal processing module in the process production and the temperature measurement error; wherein the non-ideal factors include: the temperature response characteristics of the sensor module and the mechanical stress generated during the packaging process, and the error factors of the signal processing module include: power supply noise and power supply fluctuation, as well as signal delay and signal nonlinearity.

[0039] In the embodiments of the present application, by taking into account the measurement errors caused by non-ideal factors that may be introduced in the process production, specifically the sensor material characteristics, the mechanical stress generated in the packaging process, and the power supply noise, signal delay and nonlinearity in the signal processing process, the original temperature information is calibrated and adjusted according to the preset temperature calibration mechanism, so as to obtain more accurate on-chip temperature information.

[0040] In this embodiment, by setting an independent sensor module in each die and centrally processing the temperature data of each die by the main control die 120, efficient monitoring of the internal temperature of the multi-crystalline packaged chip is achieved, which not only improves the measurement accuracy but also simplifies the system architecture and reduces the design complexity.

[0041] In related technologies, on-chip temperature measurement generally uses uniform calibration parameters, ignoring individual differences between different dies due to manufacturing process differences, such as differences in temperature response characteristics of sensor modules, packaging stress differences, and noise level differences in signal processing modules. This calibration method that ignores individual differences will lead to reduced temperature measurement accuracy, especially for high-precision application scenarios, such as high-performance computing chips or precision instruments.

[0042] See also Figure 4 As shown, in some embodiments, a temperature calibration scheme is performed for each die to improve the temperature measurement accuracy. Specifically, the preset temperature calibration mechanism is set for each die and configured to calibrate the electrical signal representing the temperature of each die in a targeted manner.

[0043] Specifically, the corresponding identification information (ID) can be stored for each die, and the corresponding calibration parameters can be read according to the ID of the current die, and the original temperature can be calibrated using the corresponding calibration parameters to obtain a more accurate temperature value. In this embodiment, the error caused by the manufacturing process difference is effectively compensated by the personalized calibration for each die, and the accuracy and reliability of the on-chip temperature measurement device are significantly improved.

[0044] In some embodiments, the sensor module includes: at least one temperature sensor based on a triode, a diode, a resistor or a capacitor. With the assistance of a signal processing module, the output temperature is a current, voltage or clock signal in a proportional, inversely proportional or other fixed form. The signal processing module can also be used to provide the temperature sensor with current, voltage, reference clock and other signals; at the same time, it receives electrical signals such as current and voltage from the temperature sensor, and then converts these electrical signals into digital signals, and reads the original temperature after processing.

[0045] See also Figure 2 or Figure 3 Specifically, the temperature sensors are arranged at multiple different regions of each die. In other words, the sensor module includes multiple temperature sensors, each of which is arranged at a different region of each die to achieve multi-point temperature monitoring.

[0046] Please see Figure 4 As shown, in some embodiments, the signal processing module is connected to the sensor module of each die through a silicon medium, a through silicon via or a wire.

[0047] In this embodiment, a signal processing module and multiple sets of process parameter calibration modules are placed in one die as the master control die 120. All the die share this set of signal processing modules, and the temperature sensors on other die are connected to the master control die 120 through silicon medium, silicon through via or other medium. The temperature sensor signals of all the die are processed by the master control die 120, and a set of process calibration parameters is reserved for each die. The signal processing module uses different process parameters according to the temperature sensor of the selected die to achieve the purpose of calibrating the temperature error of each die, thereby improving the accuracy of temperature measurement.

[0048] Embodiment 2 Figure 5 FIG. 1 is a schematic block diagram of a chip package according to an embodiment of the present invention; Figure 5 The present invention also provides a packaged chip 200 according to an embodiment, which is formed on the basis of the on-chip temperature measurement device 100 provided in the first embodiment, and the packaged chip 200 includes: at least two crystal grains, each of which is provided with a sensor module 110, each crystal grain is interconnected by a wire, and at least one of the crystal grains is a main control crystal grain 120; The main control chip 120 is integrated with a signal processing module, and the signal processing module is connected to the sensor module.

[0049] The packaged chip provided in this embodiment sets a signal processing module in the main control crystal 120 and connects it with the sensor modules in all the crystals. In this way, since the sensor modules of all the crystals share a signal processor module for signal processing and acquisition, the structural complexity of the chip can be reduced compared to the traditional method of setting up a signal testing system or device in each crystal separately.

[0050] The technical concept of this embodiment can be applied to the scenario of testing signals such as temperature, current, voltage, etc. of each die in a packaged chip composed of multiple die.

[0051] In addition, see Figure 7 As shown, the overall technical concept of this embodiment can also be applied to 3D packaged chips. Specifically, the main control die and the die are stacked and interconnected in the vertical direction.

[0052] Specifically, the sensor module 110 includes: any one of a temperature sensor, a current sensor and a voltage sensor.

[0053] The following description is made by taking the sensor module as a temperature sensor as an example. Of course, other types of sensor variations are similar. The only difference is that the physical quantities collected are different, so they will not be described in detail.

[0054] See also Figure 6As shown, in some embodiments, the sensor module is a temperature sensor configured to sense an electrical signal representing the temperature of each die; The signal processing module is at least configured to receive the electrical signal representing the temperature of each die, and determine the on-chip temperature information of the packaged chip according to the electrical signal.

[0055] In some embodiments, the signal processing module is specifically configured to calculate the original temperature information of each grain according to the electrical signal after receiving the electrical signal representing the temperature of each grain; The original temperature information is calibrated according to a preset temperature calibration mechanism to obtain the on-chip temperature information of the packaged chip.

[0056] In some embodiments, the preset temperature calibration mechanism includes the correlation between the non-ideal factors introduced by the sensor module and the signal processing module in the process production and the temperature measurement error; wherein the non-ideal factors include: the temperature response characteristics of the sensor module and the mechanical stress generated during the packaging process, and the error factors of the signal processing module include: power supply noise and power supply fluctuation, as well as signal delay and signal nonlinearity.

[0057] In some embodiments, the preset temperature calibration mechanism is set for each die respectively, and is configured to specifically calibrate the electrical signal representing the temperature of each die respectively.

[0058] In some embodiments, the sensor module includes: at least one temperature sensor based on a transistor, a diode, a resistor or a capacitor.

[0059] In some embodiments, the temperature sensors are disposed at multiple different regions of each die.

[0060] See also Figure 4 As shown, in some embodiments, the signal processing module is connected to the sensor module of each die through a silicon medium, a through silicon via or a wire.

[0061] It should be noted that the solution of this embodiment has corresponding specific technical features as the first embodiment, and its specific technical solution and technical effects are similar to those of the first embodiment. Parts not described in detail can be referred to each other.

[0062] In summary, the on-chip temperature measurement device and packaged chip of the multi-crystalline packaged chip provided in the embodiment of the present invention, by setting a signal processing module in the main control crystal grain 120, connects it with the sensor modules in all the crystal grains. In this way, since the sensor modules of all the crystal grains share a signal processor module for signal processing and acquisition, compared with the traditional method of setting a temperature measurement system or device separately in each crystal grain, it is convenient to reduce the structural complexity of the chip and save development and design costs.

[0063] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0064] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0065] For the convenience of description, the above chip internal clock period jitter measurement device is described as being divided into various functional units / circuits / modules by function. Of course, when implementing the present invention, the functions of each unit / module can be implemented in the same or multiple software and / or hardware.

[0066] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. An on-chip temperature measurement device for a multi-crystalline packaged chip, characterized in that: The device comprises: A sensor module is disposed in each die of the packaged chip and is configured to sense an electrical signal representing the temperature of each die; wherein each die is interconnected by wires and includes at least one master control die; The master control die is integrated with a signal processing module, which is connected to the sensor module and configured to receive the electrical signal representing the temperature of each die and determine the on-chip temperature information of the packaged chip according to the electrical signal.

2. The on-chip temperature measurement device according to claim 1, characterized in that: The signal processing module is specifically configured to calculate the original temperature information of each grain according to the electrical signal after receiving the electrical signal representing the temperature of each grain; The original temperature information is calibrated according to a preset temperature calibration mechanism to obtain the on-chip temperature information of the packaged chip.

3. The on-chip temperature measurement device according to claim 2, characterized in that: The preset temperature calibration mechanism includes the correlation between the non-ideal factors introduced by the sensor module and the signal processing module in the process production and the temperature measurement error; wherein the non-ideal factors include: the temperature response characteristics of the sensor module and the mechanical stress generated during the packaging process, and the error factors of the signal processing module include: power supply noise and power supply fluctuation, as well as signal delay and signal nonlinearity.

4. The on-chip temperature measurement device according to claim 2 or 3, characterized in that: The preset temperature calibration mechanism is set corresponding to each die, and is configured to specifically calibrate the electrical signal representing the temperature of each die.

5. The on-chip temperature measurement device according to claim 1, characterized in that: The sensor module includes: at least one temperature sensor based on a transistor, a diode, a resistor or a capacitor.

6. The on-chip temperature measurement device according to claim 4, characterized in that: The temperature sensors are arranged at multiple different regions of each die.

7. The on-chip temperature measurement device according to claim 1, characterized in that: The signal processing module is connected to the sensor module of each die through a silicon medium, a through silicon via or a wire.

8. A packaged chip, characterized in that: include: At least two crystals, each of which is provided with a sensor module, each crystal is interconnected by wires, and at least one is a master control crystal; The main control chip is integrated with a signal processing module, and the signal processing module is connected to the sensor module.

9. The packaged chip according to claim 8, characterized in that: The sensor module includes any one of a temperature sensor, a current sensor and a voltage sensor.

10. The packaged chip according to claim 8, characterized in that: The sensor module is a temperature sensor configured to sense an electrical signal representing the temperature of each die; The signal processing module is at least configured to receive the electrical signal representing the temperature of each die, and determine the on-chip temperature information of the packaged chip according to the electrical signal.

11. The packaged chip according to claim 10, characterized in that: The signal processing module is specifically configured to calculate the original temperature information of each grain according to the electrical signal after receiving the electrical signal representing the temperature of each grain; The original temperature information is calibrated according to a preset temperature calibration mechanism to obtain the on-chip temperature information of the packaged chip.

12. The packaged chip according to claim 11, characterized in that: The preset temperature calibration mechanism includes the correlation between the non-ideal factors introduced by the sensor module and the signal processing module in the process production and the temperature measurement error; wherein the non-ideal factors include: the temperature response characteristics of the sensor module and the mechanical stress generated during the packaging process, and the error factors of the signal processing module include: power supply noise and power supply fluctuation, as well as signal delay and signal nonlinearity.

13. The packaged chip according to claim 11 or 12, characterized in that: The preset temperature calibration mechanism is set corresponding to each die, and is configured to specifically calibrate the electrical signal representing the temperature of each die.

14. The packaged chip according to claim 10, characterized in that: The sensor module includes: at least one temperature sensor based on a transistor, a diode, a resistor or a capacitor.

15. The packaged chip according to claim 10, characterized in that: The temperature sensors are arranged at multiple different regions of each die.

16. The packaged chip according to claim 8, characterized in that: The signal processing module is connected to the sensor module of each die through a silicon medium, a through silicon via or a wire.

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