Semiconductor device, semiconductor device manufacturing method, memory and memory system

Abstract

The invention discloses a semiconductor device, a semiconductor device manufacturing method, a memory and a memory system.The semiconductor device comprises a first semiconductor structure and a second semiconductor structure, and the first semiconductor structure comprises a first bonding layer; the second semiconductor structure comprises a second bonding layer, the second bonding layer comprises at least one first connecting protrusion, and the first connecting protrusion is inserted into the first bonding layer and embedded with the first bonding layer. According to the embodiment of the invention, the second combining layer comprises at least one first connecting bulge, and the first connecting bulge is inserted into the first combining layer and embedded with the first combining layer, so that the first combining layer and the second combining layer can be combined together more stably; and the structural strength requirement of a part for electrically linking the first semiconductor structure and the second semiconductor structure is reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor device, a method for manufacturing a semiconductor device, a memory, and a storage system. Background Art

[0002] With the development of chip manufacturing technology, stacked integrated circuit components have been developed. Different circuit units are formed on multiple wafers, and then the multiple wafers are bonded together and interconnected via conductive channels to form an integrated circuit component. The use of stacked integrated circuit components can reduce chip footprint, reduce parasitic effects, increase response speed, reduce power consumption, and support heterogeneous integration.

[0003] Among them, the micro bump stacking method (Micro Bump) as an effective solution for vertical heterogeneous integration still has some problems that need to be further solved. Summary of the invention

[0004] Embodiments of the present application provide a semiconductor device, a method for manufacturing a semiconductor device, a memory, and a storage system, which are intended to solve the problem of insufficient bonding strength between two semiconductor structures of a semiconductor device.

[0005] An embodiment of the present application provides a semiconductor device, including:

[0006] A first semiconductor structure including a first bonding layer;

[0007] The second semiconductor structure includes a second bonding layer, wherein the second bonding layer includes at least one first connection protrusion, and the first connection protrusion is inserted into the first bonding layer and embedded with the first bonding layer.

[0008] In some embodiments, an adhesive layer is provided between the first connecting protrusion and the first bonding layer.

[0009] In some embodiments, the material of the adhesive layer includes one or more of tin, copper, aluminum or titanium.

[0010] In some embodiments, the material of the first connection protrusion and / or the first bonding layer includes a material that can be regrown at a temperature less than or equal to 400° C.

[0011] In some embodiments, the material of the first connection protrusion and / or the first bonding layer includes one or more of silicon monoxide, silicon carbon nitride, or silicon oxycarbon nitride.

[0012] In some embodiments, the second bonding layer includes a plurality of the first bonding protrusions, and the plurality of the first bonding protrusions are respectively inserted into the first bonding layer and embedded with the first bonding layer.

[0013] In some embodiments, a distance between two adjacent first connection protrusions is less than or equal to 3 nm; a distance between two adjacent first connection protrusions is greater than or equal to 1 nm.

[0014] In some embodiments, the first connecting protrusion is a protrusion extending along a first direction; a plurality of the first connecting protrusions are sequentially spaced and distributed along a second direction, and the second direction forms an angle with the first direction.

[0015] In some embodiments, a plurality of the first connecting protrusions are distributed in an array on the second bonding layer.

[0016] In some embodiments, the first connecting protrusion includes a first end and a second end relative to each other, the first end is used to insert into the first bonding layer, and the first connecting protrusion includes a guide portion extending from the first end to the second end, and in the direction from the first end to the second end, the distance between the two relative outer side surfaces of the guide portion gradually increases.

[0017] In some embodiments, the first bonding layer includes at least one second connection protrusion, and the second connection protrusion is inserted into the second bonding layer and interlocked with the second bonding layer.

[0018] In some embodiments, the first semiconductor structure includes a first connecting line, and the second semiconductor structure includes a second connecting line; the second connecting line is connected to the first connecting line.

[0019] In some embodiments, the first connection circuit includes a first connection portion provided on the first bonding layer, the second connection circuit includes a second connection portion passing through the first connection protrusion, and the first connection portion is connected to the second connection portion.

[0020] In some embodiments, the first connection line includes a first through silicon via passing through the first bonding layer; the second connection line includes a second through silicon via passing through the second bonding layer, and one end of the first through silicon via is connected to one end of the second through silicon via.

[0021] The present application also provides a method for manufacturing a semiconductor device, the method comprising:

[0022] Providing a first semiconductor structure, the first semiconductor structure comprising a first bonding layer, the first bonding layer comprising a first bonding surface, the first semiconductor structure further comprising a first surface, the first surface being located on a side of the first semiconductor structure away from the first bonding surface;

[0023] At least one first connecting groove is formed on the first combining surface and is recessed toward the first surface;

[0024] Providing a second semiconductor structure, the second semiconductor structure comprising a second bonding layer, the second bonding layer comprising a second bonding surface, the second semiconductor structure further comprising a second surface, the second surface being located on a side of the second semiconductor structure away from the second bonding surface;

[0025] At least one first connecting protrusion extending in a direction away from the second surface is formed on the second combining surface;

[0026] The first connecting protrusion is inserted into the first connecting groove, and the first connecting protrusion is embedded with the first bonding layer.

[0027] In some embodiments, inserting the first connecting protrusion into the first connecting groove and engaging the first connecting protrusion with the first bonding layer includes:

[0028] Inserting the first connecting protrusion into the first connecting groove;

[0029] The first bonding layer and the second bonding layer are heated to allow the first connection protrusion to be engaged with the first bonding layer.

[0030] In some embodiments, the material of the first connection protrusion and / or the first bonding layer includes a material that can be regrown at a temperature less than or equal to 400° C.; heating the first bonding layer and the second bonding layer so that the first connection protrusion is embedded with the first bonding layer includes:

[0031] The first bonding layer and the second bonding layer are heated to a preset temperature so that the first connection protrusion and the first bonding layer are embedded, and the preset temperature is less than or equal to 400°C.

[0032] In some embodiments, before inserting the first connecting protrusion into the first connecting groove, the method further includes:

[0033] An adhesive layer is coated on the inner surface of the first connecting groove and / or the outer surface of the first connecting protrusion; the material of the adhesive layer includes one or more of tin, copper, aluminum or titanium.

[0034] The embodiment of the present application further provides a memory, wherein the memory includes the semiconductor device as described above, and the semiconductor device includes:

[0035] A first semiconductor structure including a first bonding layer;

[0036] The second semiconductor structure includes a second bonding layer, wherein the second bonding layer includes at least one first connection protrusion, and the first connection protrusion is inserted into the first bonding layer and embedded with the first bonding layer.

[0037] The present application also provides a storage system, the storage system comprising:

[0038] A memory, wherein the memory is the memory as described above; and

[0039] A controller is connected to the memory, and is used to control the memory to store data.

[0040] The semiconductor device provided in the embodiment of the present application can make the first bonding layer and the second bonding layer more firmly bonded together by making the second bonding layer include at least one first connection protrusion, and the first connection protrusion is inserted into the first bonding layer and embedded with the first bonding layer, thereby reducing the risk of dissociation or debonding of the first semiconductor structure and the second semiconductor structure. In addition, the structural strength requirements of the part used to electrically connect the first semiconductor structure and the second semiconductor structure can be reduced, so that materials with stronger electrical properties or materials with reduced costs can be selected. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0042] Figure 1 A cross-sectional view of a first embodiment of a semiconductor device provided in an embodiment of the present application, wherein a first bonding surface of the first semiconductor structure and a second bonding surface of the second semiconductor structure are arranged opposite to each other;

[0043] Figure 2 A cross-sectional view of a second embodiment of a semiconductor device provided in an embodiment of the present application, wherein a first bonding surface of the first semiconductor structure and a second bonding surface of the second semiconductor structure are arranged opposite to each other;

[0044] Figure 3 for Figure 2 A schematic diagram of the structure after the first connecting protrusion and the first bonding layer are embedded;

[0045] Figure 4 A cross-sectional view of a third embodiment of a semiconductor device provided in an embodiment of the present application, wherein a first bonding surface of the first semiconductor structure and a second bonding surface of the second semiconductor structure are arranged opposite to each other;

[0046] Figure 5 for Figure 4 A schematic diagram of the structure after the first connecting protrusion and the first bonding layer are embedded;

[0047] Figure 6 A cross-sectional view of a fourth embodiment of a semiconductor device provided by an embodiment of the present application, wherein a first bonding surface of the first semiconductor structure is arranged opposite to a second bonding surface of the second semiconductor structure;

[0048] Figure 7 for Figure 6 A schematic diagram of the structure after the first connecting protrusion and the first bonding layer are embedded;

[0049] Figure 8 A cross-sectional view of a fifth embodiment of a semiconductor device provided by an embodiment of the present application, wherein a first bonding surface of the first semiconductor structure is arranged opposite to a second bonding surface of the second semiconductor structure;

[0050] Fig. 9 for Figure 8 A schematic diagram of the structure after the first connecting protrusion and the first bonding layer are embedded;

[0051] Fig.10 A three-dimensional structural diagram of an embodiment of a first semiconductor structure provided in an embodiment of the present application;

[0052] Fig.11 A three-dimensional structural diagram of an embodiment of a second semiconductor structure provided in an embodiment of the present application;

[0053] Fig.12 A flowchart of an embodiment of a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0054] Fig.13 A schematic diagram of the structure of an embodiment of a storage system provided in an embodiment of the present application;

[0055] Fig.14 A schematic diagram of the structure of an embodiment of an electronic device provided in an embodiment of the present application.

[0056] Storage system 1; memory 10; semiconductor device 100; first semiconductor structure 110; first bonding layer 111; first connecting groove 1110; first bonding surface 1111; notch 1112; matching section 1113; inner side surface 1114; second connecting protrusion 1115; first connecting line 1116; first connecting portion 1117; first circuit layer 112; first surface 1121; second semiconductor structure 120; second bonding layer 121; first connecting protrusion 1210; first end 1211; second end 1212; guide portion 1213; outer side surface 1214; second connecting groove 1215; second connecting line 1216; second connecting portion 1217; second bonding surface 1218; second circuit layer 122; second surface 1221; adhesive layer 130; first direction X; second direction Y; host 20; controller 30; central processing unit 2; electronic device 3. DETAILED DESCRIPTION

[0057] The technical solutions in the present disclosure will be described clearly and completely below in conjunction with the drawings in the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present disclosure.

[0058] It should be understood that although the terms first, second, etc. may be used herein to describe various components, these components should not be limited to these terms. These terms are used to distinguish one component from another component. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component without departing from the scope of the present disclosure.

[0059] It should be understood that when a component is said to be "on" or "connected" another component, it can be directly on or connected to another component, or there may be an intervening component. Other words used to describe the relationship between components should be interpreted in a similar manner.

[0060] As used herein, the term "layer" refers to a material portion including an area with thickness. The layer has a top side and a bottom side, wherein the bottom side of the layer is relatively close to the substrate, and the top side is relatively far away from the substrate. The layer can extend over the entire lower or upper structure, or can have a range less than the range of the lower or upper structure. In addition, the layer can be a region of a uniform or non-uniform continuous structure whose thickness is less than the thickness of the continuous structure. For example, the layer can be located between the top and bottom surfaces of the continuous structure or between any set of horizontal planes at the top and bottom surfaces. The layer can extend horizontally, vertically and / or along a tapered surface. The substrate can be a layer, which can include one or more layers, and / or can have one or more layers on, above and / or below it. The layer can include multiple layers. For example, an interconnect layer can include one or more conductive layers and a contact layer (wherein contacts, interconnects and one or more dielectric layers are formed.

[0061] Heterogeneous Integration is one of the main trends in future packaging. It can enhance functionality and improve working characteristics by integrating different components manufactured separately into higher-level components. Therefore, functional components using different manufacturing process flows can be combined into one device.

[0062] Micro bump stacking is a heterogeneous integration method in the vertical direction. It realizes the combination of two semiconductor structures by setting micro bumps on the semiconductor structure and connecting the micro bumps to another semiconductor structure. However, since micro bumps are prone to deformation, a certain interval needs to be maintained between the bumps, resulting in a limited number of micro bumps that can be set on the semiconductor structure. Moreover, micro bumps need to bear both electrical connection and physical bonding, so there are high requirements for the material properties of micro bumps.

[0063] In order to solve at least one of the above problems, the embodiments of the present application provide a semiconductor device, a method for manufacturing a semiconductor device, a memory, and a storage system, which are described in detail below.

[0064] First, an embodiment of the present application provides a semiconductor device.

[0065] Figure 1 This is a cross-sectional view of a first embodiment of a semiconductor device provided by an embodiment of the present application, wherein a first bonding surface of a first semiconductor structure is disposed opposite to a second bonding surface of a second semiconductor structure. Figure 1 As shown, the semiconductor device 100 includes a first semiconductor structure 110 and a second semiconductor structure 120, the first semiconductor structure 110 includes a first bonding layer 111, the second semiconductor structure 120 includes a second bonding layer 121, the first bonding layer 111 of the first semiconductor structure 110 and the second bonding layer 121 of the second semiconductor structure 120 are bonded to each other, so that the first semiconductor structure 110 and the second semiconductor structure 120 constitute the semiconductor device 100. The first semiconductor structure 110 can be a wafer or a chip. The second semiconductor structure 120 can also be a wafer or a chip.

[0066] The first bonding layer 111 of the first semiconductor structure 110 includes a first bonding surface 1111, and the first semiconductor structure 110 also includes a first surface 1121. The first surface 1121 is located on a side of the first semiconductor structure 110 away from the first bonding surface 1111. The second bonding layer 121 of the second semiconductor structure 120 includes a second bonding surface 1218, and the second semiconductor structure 120 also includes a second surface 1221. The second surface 1221 is located on a side of the second semiconductor structure 120 away from the second bonding surface 1218. The first bonding surface 1111 of the first bonding layer 111 and the second bonding surface 1218 of the second bonding layer 121 can be bonded together, and then the first bonding layer 111 and the second bonding layer 121 are heated.

[0067] In some embodiments, Figure 1As shown, the second bonding layer 121 includes at least one first connection protrusion 1210, which is inserted into the first bonding layer 111 and is embedded with the first bonding layer 111. By embedding the first connection protrusion 1210 of the second bonding layer 121 with the first bonding layer 111, the first bonding layer 111 and the second bonding layer 121 can be more firmly bonded together, the bonding strength between the first bonding layer 111 and the second bonding layer 121 is improved, and the risk of dissociation or debonding of the first semiconductor structure 110 and the second semiconductor structure 120 is reduced.

[0068] On this basis, the structural strength requirements of the portion where the first semiconductor structure 110 and the second semiconductor structure 120 are electrically connected can also be reduced, so that materials with stronger electrical properties or materials with lower costs can be selected. At the same time, the size of the portion where the first semiconductor structure 110 and the second semiconductor structure 120 are electrically connected can be set to be smaller and higher in density.

[0069] Among them, Figure 1 As shown, at least one first connecting groove 1110 recessed toward the first surface 1121 can be formed on the first bonding surface 1111 of the first bonding layer 111, and at least one first connecting protrusion 1210 extending in a direction away from the second surface 1221 can be formed on the second bonding surface 1218 of the second bonding layer 121. The first connecting protrusion 1210 is inserted into the first connecting groove 1110 to engage with the first bonding layer 111.

[0070] Specifically, a first bonding layer 111 of the first semiconductor structure 110 can be formed by a thin film deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD) or any combination thereof, and then the first bonding surface 1111 of the first bonding layer 111 is etched by dry or wet etching to remove part of the material of the first bonding layer 111 to form a first connecting groove 1110.

[0071] Similarly, a second bonding layer 121 of the second semiconductor structure 120 can be formed by a thin film deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD) or any combination thereof, and then the second bonding surface 1218 of the second bonding layer 121 is etched by dry or wet etching to remove part of the material of the second bonding layer 121 so that the remaining part of the second bonding layer 121 forms the first connecting protrusion 1210.

[0072] In some embodiments, Figure 2 and Figure 3 As shown, an adhesive layer 130 may be provided between the first connection protrusion 1210 and the first bonding layer 111. The first connection protrusion 1210 and the first bonding layer 111 are bonded by the adhesive layer 130, so that the interlocking strength between the first connection protrusion 1210 and the second bonding layer 121 can be higher. The material of the adhesive layer 130 includes one or more of tin, copper, aluminum or titanium.

[0073] Among them, a layer of adhesive layer 130 can be coated on the surface of the first connecting protrusion 1210. When the first connecting protrusion 1210 is inserted into the first connecting groove 1110 of the first bonding layer 111, the adhesive layer 130 is located between the first connecting protrusion 1210 and the inner surface of the first connecting groove 1110 of the first bonding layer 111. Thereafter, the first bonding layer 111 and the second bonding layer 121 are heated so that the adhesive layer 130 bonds the first connecting protrusion 1210 and the first bonding layer 111 together.

[0074] Of course, the adhesive layer 130 can also be coated on the inner surface of the first connecting groove 1110 of the first bonding layer 111. When the first connecting protrusion 1210 is inserted into the first connecting groove 1110 of the first bonding layer 111, the adhesive layer 130 is located between the first connecting protrusion 1210 and the inner surface of the first connecting groove 1110 of the first bonding layer 111. Thereafter, the first bonding layer 111 and the second bonding layer 121 are heated so that the adhesive layer 130 bonds the first connecting protrusion 1210 and the first bonding layer 111 together.

[0075] It should be noted that in the embodiment of the present application, the adhesive layer 130 may not be provided between the first connecting protrusion 1210 and the first bonding layer 111, but the first bonding layer 111 and the second bonding layer 121 may be bonded together by heating the first bonding layer 111 and the second bonding layer 121 or other methods.

[0076] In some embodiments, the material of the first connection protrusion 1210 and / or the first bonding layer 111 includes a regrowing material. Thus, when the first bonding layer 111 and the second bonding layer 121 are heated, the first connection protrusion 1210 and the first bonding layer 111 can be regrown, so that the first connection protrusion 1210 and the first bonding layer 111 are better embedded together.

[0077] It should be noted that the materials of the first connection protrusion 1210 and the first bonding layer 111 may both include a regrowing material, or one of the first connection protrusion 1210 and the first bonding layer 111 may include a regrowing material, and the other may be another material. In addition, the first connection protrusion 1210 and / or the first bonding layer 111 may all be made of a regrowing material, or a portion of the first connection protrusion 1210 and / or the first bonding layer 111 may be made of a regrowing material. Of course, the former can make the formation of the first connection protrusion 1210 and / or the first bonding layer 111 more convenient.

[0078] The material of the first connection protrusion 1210 and / or the first bonding layer 111 includes a material that can be regrown at a temperature less than or equal to 400°C. Thus, the temperature required for heating the first bonding layer 111 and the second bonding layer 121 so that the first bonding layer 111 and the second bonding layer 121 are bonded together is less than or equal to 400°C, thereby avoiding the risk of the first semiconductor structure 110 and the second semiconductor structure 120 being too high in temperature, causing the first semiconductor structure 110 and the second semiconductor structure 120 to be deformed or even broken due to stress generated inside the high temperature. The material of the first connection protrusion 1210 and / or the first bonding layer 111 includes one or more of silicon monoxide, silicon carbon nitride, or carbon nitride silicon oxide.

[0079] The temperature required for the regrowth of the first connecting protrusion 1210 and / or the first bonding layer 111 may be 380°C, 350°C, 300°C, 280°C, etc., depending on the material of the first connecting protrusion 1210 and / or the first bonding layer 111, and is not limited here.

[0080] In a preferred embodiment, the first bonding layer 111 of the first semiconductor structure 110 may be made of a material that can be regrown at a temperature less than or equal to 400° C., so as to form the first connection groove 1110 on the first bonding layer 111 by etching or other methods. And / or, the second bonding layer 121 of the second semiconductor structure 120 may be made of a material that can be regrown at a temperature less than or equal to 400° C., so as to form the first connection protrusion 1210 on the second bonding layer 121 by etching or other methods.

[0081] Of course, it is also possible to make only the material of the first connecting protrusion 1210 of the second bonding layer 121 a material that can be regrown at a temperature less than or equal to 400°C, while the other parts of the second bonding layer 121 are materials that cannot be regrown, or, the other parts of the second bonding layer 121 are materials that can be regrown at a temperature greater than 400°C.

[0082] like Figure 1 As shown, the second bonding layer 121 of the second semiconductor structure 120 includes a plurality of first connection protrusions 1210 , which are respectively inserted into the first bonding layer 111 and embedded with the first bonding layer 111 to improve the bonding strength between the first bonding layer 111 and the second bonding layer 121 .

[0083] Correspondingly, the first bonding layer 111 of the first semiconductor structure 110 includes a plurality of first connection grooves 1110 , and a plurality of first connection protrusions 1210 correspond one-to-one to the plurality of first connection grooves 1110 and are plugged into each other, so that the plurality of first connection protrusions 1210 are respectively inserted into the first bonding layer 111 and are embedded with the first bonding layer 111 .

[0084] The distance between two adjacent first connection protrusions 1210 can be less than or equal to 3 nm, so that the second bonding layer 121 can include as many first connection protrusions 1210 as possible, so as to further improve the bonding strength between the first bonding layer 111 and the second bonding layer 121. The distance between two adjacent first connection protrusions 1210 can be 2.8 nm, 2.5 nm, 2.2 nm, 1 nm, 0.5 nm, etc., which can be determined according to the shape and size of the first connection protrusions 1210 and other factors.

[0085] In addition, the distance between two adjacent first connection protrusions 1210 is greater than or equal to 1 nm, so as to avoid the distance between two adjacent first connection protrusions 1210 being too small, so that the distance between two corresponding adjacent first connection grooves 1110 is too small, resulting in the weakening of the strength of the portion of the first bonding layer 111 used for connecting with the first connection protrusions 1210, thereby affecting the bonding strength between the first bonding layer 111 and the second bonding layer 121. The distance between two adjacent first connection protrusions 1210 can be 1.2 nm, 1.5 nm, 1.8 nm, 2 nm, 2.3 nm, etc., which can be determined according to factors such as the shape and size of the first connection protrusions 1210.

[0086] In some preferred embodiments, the distance between two adjacent first connection protrusions 1210 can be less than or equal to 3 nm and greater than or equal to 1 nm, so that the bonding strength between the first bonding layer 111 and the second bonding layer 121 reaches a preferred range.

[0087] In some embodiments, Fig.11As shown, the first connection protrusion 1210 of the second bonding layer 121 is a protrusion extending along the first direction X. Thus, the length of the first connection protrusion 1210 in the first direction X can be increased, the structural strength of the first connection protrusion 1210 can be improved, and the bonding strength between the first bonding layer 111 and the second bonding layer 121 can be improved.

[0088] When there are multiple first connection protrusions 1210, the multiple first connection protrusions 1210 are distributed in sequence along the second direction Y, and the second direction Y forms an angle with the first direction X. The distance between each adjacent two first connection protrusions 1210 can be equal, and the width of each first connection protrusion 1210 in the second direction Y can be equal. The distance between each adjacent two first connection protrusions 1210 can also be unequal. Alternatively, the width of each first connection protrusion 1210 in the second direction Y can be unequal. Of course, the former can make the formation of the first connection protrusion 1210 more convenient.

[0089] Correspondingly, if Fig.10 As shown, the first connection groove 1110 of the first bonding layer 111 is a strip-shaped groove extending along the first direction X. When there are multiple first connection grooves 1110, the multiple first connection grooves 1110 are distributed in sequence along the second direction Y at intervals.

[0090] In other embodiments, a plurality of first connection protrusions 1210 may be distributed in an array on the second bonding layer 121. The first connection protrusions 1210 may be columnar protrusions extending along the first direction X, or may be cross-shaped protrusions extending along the first direction X, or protrusions of other shapes.

[0091] Correspondingly, a plurality of first connection grooves 1110 are distributed in an array on the first bonding layer 111. The first connection grooves 1110 may be columnar grooves extending along the first direction X, or may be cross-shaped grooves extending along the first direction X, or grooves of other shapes.

[0092] Specifically, the plurality of first connection protrusions 1210 are distributed in an array along the first direction X and the second direction Y. The first direction X and the second direction Y are perpendicular to each other. Correspondingly, the plurality of first connection grooves 1110 are also distributed in an array along the first direction X and the second direction Y.

[0093] In some embodiments, Figure 1 As shown, the first connection protrusion 1210 includes a first end 1211 and a second end 1212 opposite to each other, and the first end 1211 of the first connection protrusion 1210 is used to be inserted into the first bonding layer 111. The first connection protrusion 1210 includes a guide portion 1213 extending from the first end 1211 to the second end 1212, and in the direction from the first end 1211 to the second end 1212, the distance between the two opposite outer side surfaces 1214 of the guide portion 1213 gradually increases.

[0094] Therefore, when the first end 1211 of the first connection protrusion 1210 is inserted into the notch 1112 of the first connection groove 1110, the inner side surface 1114 of the first connection groove 1110 can cooperate with the two opposite outer side surfaces 1214 of the guide portion 1213 located at the first end 1211, thereby guiding the guide portion 1213 located at the first end 1211, so that the first end 1211 can be more accurately inserted into the first connection groove 1110. The two opposite outer side surfaces 1214 of the guide portion 1213 can be curved surfaces, inclined surfaces, etc.

[0095] Specifically, the surface of the guide portion 1213 of the first end 1211 of the first connecting protrusion 1210 is a convex surface, and correspondingly, the first connecting groove 1110 includes a mating section 1113 extending from the bottom of the groove to the groove opening 1112, and the mating section 1113 is used to cooperate with the guide portion 1213. The inner surface of the mating section 1113 is a concave surface, so that after the first connecting protrusion 1210 is inserted into the first connecting groove 1110, the gaps at various locations between the outer surface of the first connecting protrusion 1210 and the inner surface of the first connecting groove 1110 remain basically consistent.

[0096] In some embodiments, the first connecting protrusion 1210 is too loosely fitted with the first connecting groove 1110, that is, there is a gap between at least one side surface of the first connecting protrusion 1210 and the inner surface of the first connecting groove 1110, so that in the process of inserting multiple first connecting protrusions 1210 into multiple first connecting grooves 1110 one by one, the positions of the first semiconductor structure 110 and the second semiconductor structure 120 can be adjusted to a certain extent, so that the multiple first connecting protrusions 1210 can be accurately inserted into the corresponding first connecting grooves 1110, and the precision requirement for the first connecting protrusions 1210 is reduced.

[0097] In other embodiments, Figure 8 and Fig. 9 As shown, the first bonding layer 111 may also include at least one second connecting protrusion 1115, and the second connecting protrusion 1115 is inserted into the second bonding layer 121 and interlocked with the second bonding layer 121, so that the first bonding layer 111 and the second bonding layer 121 are more firmly bonded together, thereby improving the bonding strength between the first bonding layer 111 and the second bonding layer 121.

[0098] Among them, a second connecting groove 1215 can be formed on the second connecting surface 1218 of the second connecting layer 121, and the second connecting protrusion 1115 of the first connecting layer 111 is inserted into the second connecting groove 1215 of the second connecting layer 121, so that the second connecting protrusion 1115 is inserted into the second connecting layer 121 and interlocked with the second connecting layer 121.

[0099] Specifically, the first bonding surface 1111 of the first bonding layer 111 may be etched by dry or wet etching, and part of the material of the first bonding layer 111 may be removed to form the second connection protrusion 1115. The second bonding surface 1218 of the second bonding layer 121 may be etched by dry or wet etching, and part of the material of the second bonding layer 121 may be removed, so that the remaining part of the second bonding layer 121 forms the second connection groove 1215. The structure of the second connection protrusion 1115 may refer to the structure of the first connection protrusion 1210, and the structure of the second connection groove 1215 may refer to the structure of the first connection groove 1110, which will not be described in detail here.

[0100] In some embodiments, Figure 4 and Figure 5 As shown, the first semiconductor structure 110 includes a first connection line 1116, and the second semiconductor structure 120 includes a second connection line 1216. The second connection line 1216 is connected to the first connection line 1116, so as to realize signal transmission between the first semiconductor structure 110 and the second semiconductor structure 120.

[0101] Among them, the first connection circuit 1116 of the first semiconductor structure 110 includes a first connection portion 1117 arranged on the first bonding layer 111, and the second connection circuit 1216 of the second semiconductor structure 120 includes a second connection portion 1217 passing through the first connection protrusion 1210, and the first connection portion 1117 is connected to the second connection portion 1217, so that the second connection circuit 1216 is connected to the first connection circuit 1116.

[0102] Specifically, the first semiconductor structure 110 includes a first circuit layer 112, the first circuit layer 112 is located on the side of the first bonding layer 111 away from the first bonding surface 1111, and the surface of the first circuit layer 112 away from the first bonding layer 111 is a first surface 1121. Circuit structures such as a storage circuit (not shown in the figure) and a control circuit (not shown in the figure) can be set in the first circuit layer 112. The first connecting line 1116 is connected to the circuit structures such as the storage circuit and the control circuit in the first circuit layer 112.

[0103] The second semiconductor structure 120 includes a second circuit layer 122, which is located on the side of the second bonding layer 121 away from the second bonding surface 1218, and the surface of the second circuit layer 122 away from the second bonding layer 121 is a second surface 1221. Circuit structures such as a storage circuit (not shown in the figure) and a control circuit (not shown in the figure) can be set in the second circuit layer 122. The second connecting line 1216 is connected to the circuit structures such as the storage circuit and the control circuit in the second circuit layer 122. By connecting the second connecting line 1216 with the first connecting line 1116, signal transmission between the circuit structure of the first circuit layer 112 and the circuit structure of the second circuit layer 122 can be achieved. Among them, the circuit structure in one of the first circuit layer 112 and the second circuit layer 122 can be a storage circuit, and the circuit structure in the other can be a control circuit.

[0104] Continue to refer to Figure 4 and Figure 5 , the first connection portion 1117 is formed on the inner surface of the first connection groove 1110, and the second connection portion 1217 passes through the first connection protrusion 1210 along the first direction X. When the first connection protrusion 1210 is inserted into the first connection groove 1110, the second connection portion 1217 passing through the first connection protrusion 1210 contacts the first connection portion 1117, so that the first connection portion 1117 is connected to the second connection portion 1217. When the first bonding layer 111 and the second bonding layer 121 are heated to combine the first bonding layer 111 and the second bonding layer 121 together, the first connection portion 1117 and the second connection portion 1217 are also stably connected together.

[0105] The number of the first connection parts 1117 and the number of the second connection parts 1217 are respectively multiple, and the multiple first connection parts 1117 and the multiple second connection parts 1217 are connected one by one, so that the second connection line 1216 is connected to the first connection line 1116. The multiple first connection parts 1117 and the multiple second connection parts 1217 are connected one by one to form multiple conductive structures, and the distance between two adjacent conductive structures is less than or equal to 8nm. The distance between two adjacent conductive structures can be 7nm, 5nm, 3nm, etc.

[0106] In other embodiments, Figure 6 and Figure 7 As shown, the first connection line 1116 includes a first through silicon via (TSV) passing through the first bonding layer 111. The second connection line 1216 includes a second through silicon via passing through the second bonding layer 121, and one end of the first through silicon via is connected to one end of the second through silicon via, so that the first connection line 1116 is connected to the second connection line 1216.

[0107] Of course, the first connecting line 1116 includes a first through glass via (Through Glass Via, TGV) passing through the first bonding layer 111, and the second connecting line 1216 includes a second through glass via passing through the second bonding layer 121, and one end of the first through glass via is connected to one end of the second through glass via, thereby connecting the first connecting line 1116 to the second connecting line 1216.

[0108] In order to better manufacture the semiconductor structure in the embodiment of the present application, the embodiment of the present application also provides a method for manufacturing a semiconductor device, such as Fig.12 As shown, the method includes steps S210 to S250, which are described in detail as follows:

[0109] S210, providing a first semiconductor structure 110, the first semiconductor structure 110 includes a first bonding layer 111, the first bonding layer 111 includes a first bonding surface 1111, the first semiconductor structure 110 also includes a first surface 1121, and the first surface 1121 is located on a side of the first semiconductor structure 110 away from the first bonding surface 1111.

[0110] The first semiconductor structure 110 may be a wafer or a chip. The first semiconductor structure 110 may include a first circuit layer 112 and a first bonding layer 111. The first circuit layer 112 is located on the side of the first bonding layer 111 away from the first bonding surface 1111, and the surface of the first circuit layer 112 away from the first bonding layer 111 is the first surface 1121. Circuit structures such as storage circuits and control circuits may be arranged in the first circuit layer 112. The first bonding layer 111 may be formed on the side of the first circuit layer 112 away from the first surface 1121 by a thin film deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD) or any combination thereof.

[0111] S220 , forming at least one first connecting groove 1110 recessed toward the first surface 1121 on the first combining surface 1111 .

[0112] The first bonding surface 1111 of the first bonding layer 111 may be etched by dry or wet etching to remove part of the material of the first bonding layer 111 to form the first connection groove 1110. Of course, at least one first connection groove 1110 recessed toward the first surface 1121 may be formed on the first bonding surface 1111 by other methods.

[0113] Specifically, there are multiple first connection grooves 1110 formed on the first bonding surface 1111 , and the multiple first connection grooves 1110 are sequentially spaced and distributed along the second direction Y. Of course, the multiple first connection grooves 1110 can also be distributed in an array, uniformly distributed, or non-uniformly distributed on the first bonding layer 111 .

[0114] S230 , providing a second semiconductor structure 120 , the second semiconductor structure 120 comprising a second bonding layer 121 , the second bonding layer 121 comprising a second bonding surface 1218 , the second semiconductor structure 120 further comprising a second surface 1221 , and the second surface 1221 is located on a side of the second semiconductor structure 120 away from the second bonding surface 1218 .

[0115] The second semiconductor structure 120 may be a wafer or a chip. The second semiconductor structure 120 may include a second circuit layer 122 and a second bonding layer 121. The second circuit layer 122 is located on the side of the second bonding layer 121 away from the second bonding surface 1218, and the surface of the second circuit layer 122 away from the second bonding layer 121 is the second surface 1221. Circuit structures such as storage circuits and control circuits may be arranged in the second circuit layer 122. The second bonding layer 121 may be formed on the side of the second circuit layer 122 away from the second surface 1221 by a thin film deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD) or any combination thereof.

[0116] S240 , forming at least one first connecting protrusion 1210 on the second combining surface 1218 , which extends in a direction away from the second surface 1221 .

[0117] The second bonding surface 1218 of the second bonding layer 121 may be etched by dry or wet etching to remove part of the material of the second bonding layer 121, so that the remaining part of the second bonding layer 121 forms the first bonding protrusion 1210. Of course, other methods may also be used to remove part of the material of the second bonding layer 121, so that the remaining part of the second bonding layer 121 forms the first bonding protrusion 1210.

[0118] S250 , inserting the first connection protrusion 1210 into the first connection groove 1110 , and making the first connection protrusion 1210 fit into the first bonding layer 111 .

[0119] The semiconductor device manufacturing method provided in the embodiment of the present application inserts the first connecting protrusion 1210 of the second bonding layer 121 into the first connecting groove 1110 of the first bonding layer 111, so that the first connecting protrusion 1210 of the second bonding layer 121 is embedded with the first bonding layer 111, so that the first bonding layer 111 and the second bonding layer 121 can be more firmly combined together, thereby improving the bonding strength between the first bonding layer 111 and the second bonding layer 121 and reducing the risk of dissociation or debonding of the first semiconductor structure 110 and the second semiconductor structure 120.

[0120] On this basis, the structural strength requirements of the electrically connected portion of the first semiconductor structure 110 and the second semiconductor structure 120 can be reduced, thereby selecting materials with stronger electrical properties or selecting materials with lower costs.

[0121] Furthermore, since the structural strength requirement of the portion where the first semiconductor structure 110 and the second semiconductor structure 120 are electrically connected is reduced, the size of the portion where the first semiconductor structure 110 and the second semiconductor structure 120 are electrically connected can be set to be smaller and higher in density.

[0122] In some embodiments, the step of inserting the first connection protrusion 1210 into the first connection groove 1110 and engaging the first connection protrusion 1210 with the first bonding layer 111 may include step S251 and step S252, which are described in detail as follows:

[0123] S251 , inserting the first connecting protrusion 1210 into the first connecting groove 1110 .

[0124] The first bonding surface 1111 of the first semiconductor structure 110 may be aligned with the second bonding surface 1218 of the second semiconductor structure 120 , the first connecting protrusion 1210 may be aligned with the first connecting groove 1110 , and the first connecting protrusion 1210 may be inserted into the corresponding first connecting groove 1110 .

[0125] S252 , heating the first bonding layer 111 and the second bonding layer 121 to make the first connection protrusion 1210 fit into the first bonding layer 111 .

[0126] By heating the first bonding layer 111 and the second bonding layer 121 , the first connection protrusion 1210 can be better embedded with the first bonding layer 111 , thereby improving the connection strength between the first bonding layer 111 and the second bonding layer 121 .

[0127] In some embodiments, the material of the first connection protrusion 1210 and / or the first bonding layer 111 includes a material that can be regrown at a temperature less than or equal to 400° C. The step of heating the first bonding layer 111 and the second bonding layer 121 so that the first connection protrusion 1210 is embedded with the first bonding layer 111 may include: heating the first bonding layer 111 and the second bonding layer 121 to a preset temperature so that the first connection protrusion 1210 is embedded with the first bonding layer 111, and the preset temperature is less than or equal to 400° C.

[0128] Thus, the temperature required for heating the first bonding layer 111 and the second bonding layer 121 so that the first bonding layer 111 and the second bonding layer 121 are bonded together is less than or equal to 400° C., thereby avoiding the risk of the first semiconductor structure 110 and the second semiconductor structure 120 being too high in temperature, causing the first semiconductor structure 110 and the second semiconductor structure 120 to be deformed or even broken due to stress generated by high temperature. The material of the first connection protrusion 1210 and / or the first bonding layer 111 includes one or more of silicon monoxide, silicon carbon nitride, or carbon nitride silicon oxide.

[0129] The temperature required for the regrowth of the first connecting protrusion 1210 and / or the first bonding layer 111 may be 380°C, 350°C, 300°C, 280°C, etc., depending on the material of the first connecting protrusion 1210 and / or the first bonding layer 111, and is not limited here.

[0130] The first bonding layer 111 of the first semiconductor structure 110 may be made of a material that can be regrown at a temperature less than or equal to 400° C., so as to form a first connection groove 1110 in the first bonding layer 111 by etching or other methods. And / or, the second bonding layer 121 of the second semiconductor structure 120 may be made of a material that can be regrown at a temperature less than or equal to 400° C., so as to form a first connection protrusion 1210 in the second bonding layer 121 by etching or other methods.

[0131] Of course, it is also possible to make only the material of the first connecting protrusion 1210 of the second bonding layer 121 a material that can be regrown at a temperature less than or equal to 400°C, while the other parts of the second bonding layer 121 are materials that cannot be regrown, or, the other parts of the second bonding layer 121 are materials that can be regrown at a temperature greater than 400°C.

[0132] In some embodiments, before inserting the first connecting protrusion 1210 into the first connecting groove 1110 , the method for manufacturing the semiconductor device 100 may further include: coating an adhesive layer 130 on an inner surface of the first connecting groove 1110 and / or an outer surface of the first connecting protrusion 1210 .

[0133] By coating an adhesive layer 130 on the inner surface of the first connection groove 1110 and / or the outer surface of the first connection protrusion 1210, when the first connection protrusion 1210 of the second bonding layer 121 is inserted into the first connection groove 1110 of the first bonding layer 111, an adhesive layer 130 can be formed between the first connection protrusion 1210 and the inner surface of the first connection groove 1110, and the adhesive layer 130 can bond the first connection protrusion 1210 and the first bonding layer 111, thereby increasing the interlocking strength between the first connection protrusion 1210 and the second bonding layer 121. The material of the adhesive layer 130 includes one or more of tin, copper, aluminum or titanium.

[0134] In some embodiments, the semiconductor device manufacturing method further includes:

[0135] At least one second connecting protrusion 1115 is formed on the first combining surface 1111 and extends in a direction away from the first surface 1121 .

[0136] The first bonding surface 1111 of the first bonding layer 111 may be etched by dry or wet etching to remove part of the material of the first bonding layer 111, so as to form the first connection groove 1110 on the first bonding surface 1111, and the remaining part of the first bonding layer 111 forms the second connection protrusion 1115. Of course, other methods may also be used to remove part of the material of the first bonding layer 111, so as to form the first connection groove 1110 and the second connection protrusion 1115 on the first bonding layer 111.

[0137] At least one second connection groove 1215 recessed toward the second surface 1221 is formed on the second combining surface 1218 .

[0138] The second bonding surface 1218 of the second bonding layer 121 can be etched by dry or wet etching to remove part of the material of the second bonding layer 121, so as to form the second connection groove 1215 on the second bonding surface 1218, and the remaining part of the second bonding layer 121 forms the first connection protrusion 1210. Of course, other methods can also be used to remove part of the material of the second bonding layer 121, so as to form the second connection groove 1215 and the first connection protrusion 1210 on the second bonding layer 121.

[0139] The second connection protrusion 1115 is inserted into the second connection groove 1215 , and the second connection protrusion 1115 is embedded with the second coupling layer 121 .

[0140] By inserting the second connecting protrusion 1115 into the second bonding layer 121 and engaging with the second bonding layer 121, the first bonding layer 111 and the second bonding layer 121 are more firmly bonded together, thereby improving the bonding strength between the first bonding layer 111 and the second bonding layer 121. The structure, shape, and material of the second connecting protrusion 1115 and the second connecting groove 1215 can refer to the above-mentioned embodiments, and will not be described in detail here.

[0141] In the semiconductor device manufacturing method provided in the embodiment of the present application, the structure, shape, distribution method, etc. of the first connecting protrusion 1210 and the first connecting groove 1110 can refer to the above embodiments and will not be repeated here.

[0142] An embodiment of the present application also provides a memory, which includes a semiconductor device, which is the semiconductor device in any one of the above embodiments, or the semiconductor device is manufactured by any one of the above semiconductor device manufacturing methods. Since the present memory adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be described one by one here.

[0143] See also Fig.13 The embodiment of the present application also provides a storage system 1, which includes a controller 30 and a memory 10. The controller 30 is connected to the memory 10 and is used to control the memory 10 to store data; wherein the memory 10 includes the semiconductor device 100 in any of the above embodiments.

[0144] Specifically, the memory 10 may be specifically a three-dimensional memory (e.g., a 3D NAND memory). The controller 30 may control the memory 10 through a channel CH, and the memory 10 may perform an operation based on the control of the controller 30 in response to a request from the host 20. The memory 10 may receive a command CMD and an address ADDR from the controller 30 through the channel CH and access an area selected from a memory cell array in response to the address. In other words, the memory 10 may perform an internal operation corresponding to the command on the area selected by the address.

[0145] In some embodiments, the storage system 1 can be implemented as a storage device such as a universal flash storage (UFS) device, a solid state drive (SSD), a multimedia card in the form of MMC, eMMC, RS-MMC and micro MMC, a secure digital card in the form of SD, mini SD and micro SD, a Personal Computer Memory Card International Association (PCMCIA) card type storage device, a peripheral component interconnect (PCI) type storage device, a high-speed PCI (PCI-E) type storage device, a compact flash (CF) card, a smart media card or a memory stick, etc.

[0146] Specifically, the storage system 1 can be used in terminal products such as computers, televisions, set-top boxes, and vehicles.

[0147] See also Fig.14 The embodiment of the present application also provides an electronic device 3, which includes a central processing unit 2 and the above-mentioned storage system 1 provided in the embodiment of the present application. Specifically, the electronic device 3 can be any device that can store data, such as a mobile phone, a desktop computer, a tablet computer, a laptop computer, a server, a vehicle-mounted device, a wearable device, a mobile power supply, etc.

[0148] The central processing unit 2 is used to exchange information and data with the storage system 1 .

[0149] An electronic device provided in an embodiment of the present application has the same beneficial effects as the above-mentioned storage system due to the provision of the storage system provided in an embodiment of the present application.

[0150] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0151] The semiconductor device, semiconductor device manufacturing method, memory and storage system provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A semiconductor device, characterized in that: include: A first semiconductor structure including a first bonding layer; The second semiconductor structure includes a second bonding layer, wherein the second bonding layer includes at least one first connection protrusion, and the first connection protrusion is inserted into the first bonding layer and embedded with the first bonding layer.

2. The semiconductor device according to claim 1, wherein An adhesive layer is provided between the first connecting protrusion and the first bonding layer.

3. The semiconductor device according to claim 2, wherein: The material of the bonding layer includes one or more of tin, copper, aluminum or titanium.

4. The semiconductor device according to claim 1, wherein The material of the first connection protrusion and / or the first bonding layer includes a material that can be regrown at a temperature less than or equal to 400° C.

5. The semiconductor device according to claim 4, wherein: The material of the first connection protrusion and / or the first bonding layer includes one or more of silicon monoxide, silicon carbon nitride or silicon carbon nitride oxide.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that: The second bonding layer includes a plurality of the first bonding protrusions, and the plurality of the first bonding protrusions are respectively inserted into the first bonding layer and embedded with the first bonding layer.

7. The semiconductor device according to claim 6, wherein: The distance between two adjacent first connection protrusions is less than or equal to 3 nm; the distance between two adjacent first connection protrusions is greater than or equal to 1 nm.

8. The semiconductor device according to claim 6, wherein: The first connecting protrusion is a protrusion extending along the first direction; a plurality of the first connecting protrusions are sequentially spaced and distributed along the second direction, and the second direction forms an angle with the first direction.

9. The semiconductor device according to claim 6, wherein: A plurality of the first connecting protrusions are distributed in an array on the second bonding layer.

10. The semiconductor device according to any one of claims 1 to 5, characterized in that The first connecting protrusion includes a first end and a second end opposite to each other, the first end is used to insert into the first bonding layer, and the first connecting protrusion includes a guide portion extending from the first end to the second end, and in the direction from the first end to the second end, the distance between the two relative outer side surfaces of the guide portion gradually increases.

11. The semiconductor device according to any one of claims 1 to 5, characterized in that: The first bonding layer includes at least one second connection protrusion, and the second connection protrusion is inserted into the second bonding layer and embedded with the second bonding layer.

12. The semiconductor device according to any one of claims 1 to 5, characterized in that: The first semiconductor structure includes a first connecting line, and the second semiconductor structure includes a second connecting line; the second connecting line is connected to the first connecting line.

13. The semiconductor device according to claim 12, wherein: The first connection circuit includes a first connection portion provided on the first bonding layer, the second connection circuit includes a second connection portion passing through the first connection protrusion, and the first connection portion is connected to the second connection portion.

14. The semiconductor device according to claim 12, wherein: The first connection line includes a first through silicon via passing through the first bonding layer; the second connection line includes a second through silicon via passing through the second bonding layer, and one end of the first through silicon via is connected to one end of the second through silicon via.

15. A method for manufacturing a semiconductor device, characterized in that: The method comprises: Providing a first semiconductor structure, the first semiconductor structure comprising a first bonding layer, the first bonding layer comprising a first bonding surface, the first semiconductor structure further comprising a first surface, the first surface being located on a side of the first semiconductor structure away from the first bonding surface; At least one first connecting groove is formed on the first combining surface and is recessed toward the first surface; Providing a second semiconductor structure, the second semiconductor structure comprising a second bonding layer, the second bonding layer comprising a second bonding surface, the second semiconductor structure further comprising a second surface, the second surface being located on a side of the second semiconductor structure away from the second bonding surface; At least one first connecting protrusion extending in a direction away from the second surface is formed on the second combining surface; The first connecting protrusion is inserted into the first connecting groove, and the first connecting protrusion is embedded with the first bonding layer.

16. The method for manufacturing a semiconductor device according to claim 15, wherein: The step of inserting the first connecting protrusion into the first connecting groove and engaging the first connecting protrusion with the first bonding layer comprises: Inserting the first connecting protrusion into the first connecting groove; The first bonding layer and the second bonding layer are heated to allow the first connection protrusion to be engaged with the first bonding layer.

17. The method for manufacturing a semiconductor device according to claim 16, wherein: The material of the first connection protrusion and / or the first bonding layer includes a material that can be regrown at a temperature less than or equal to 400° C.; the heating of the first bonding layer and the second bonding layer to make the first connection protrusion fit with the first bonding layer includes: The first bonding layer and the second bonding layer are heated to a preset temperature so that the first connection protrusion and the first bonding layer are embedded, and the preset temperature is less than or equal to 400°C.

18. The method for manufacturing a semiconductor device according to claim 16, wherein: Before inserting the first connecting protrusion into the first connecting groove, the method further includes: An adhesive layer is coated on the inner surface of the first connecting groove and / or the outer surface of the first connecting protrusion; the material of the adhesive layer includes one or more of tin, copper, aluminum or titanium.

19. A memory, characterized in that: The memory includes the semiconductor device described in any one of 1 to 14.

20. A storage system, characterized in that: The storage system comprises: The memory as claimed in claim 19; and A controller is connected to the memory, and is used to control the memory to store data.

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