A to package socket for semiconductor components and a manufacturing method thereof

Abstract

The application relates to the technical field of laser packaging, and discloses a TO packaging tube base of a semiconductor component and a manufacturing method, which comprises a base, a heat dissipation column is fixedly installed on the top of the base, positioning grooves are formed on the left and right sides of the base, a glass insulator is fixedly installed on the inner side of the base, and a pin is fixedly installed on the inner side of the glass insulator. The TO packaging tube base of the semiconductor component and the manufacturing method are characterized in that the base is designed as a copper base, first limiting holes and second limiting holes, the first limiting holes and the second limiting holes have an inner diameter difference, the longitudinal connecting surface of the base and the glass insulator on the inner side is cut off, after subsequent eutectic process thermal expansion and cooling shrinkage, although the longitudinal connecting surface of the base and the glass insulator on the inner side has a gap, the transverse connecting surface of the base and the glass insulator on the inner side is still in close contact, the longitudinal connecting surface with the gap is intercepted and blocked, external air is prevented from penetrating, and the purpose of high sealing performance is achieved.

Description

Technical Field

[0001] This invention relates to the field of laser packaging technology, specifically to a TO package socket for semiconductor components and a manufacturing method thereof. Background Technology

[0002] With the increasing application of high-power semiconductors in industries such as laser lighting, laser display, lidar, and laser processing, watt-level lasers using TO (Transistor Outline) packages, which have lower packaging costs, are increasingly demonstrating their superiority. However, because the laser substrate in TO packages is made of low-carbon steel, its thermal conductivity is poor. Dissipating the heat generated by a continuously emitting laser is a challenge. A poorly heated packaging substrate can cause the chip's junction temperature to rise, leading to a decrease in luminous power or even damage to the chip, and also introducing wavelength drift issues.

[0003] To improve the heat dissipation of TO-packaged laser bases, existing technologies replace the base material with copper. While this enhances heat dissipation, it results in poor sealing performance between the copper base and the inner glass insulator. Because the specific heat capacity difference between copper and glass is greater than that between low-carbon steel or iron and glass, during the eutectic process, the copper base expands and contracts laterally due to thermal expansion and contraction. Upon cooling and contraction, gaps form at the longitudinal connection surface between the copper base and the inner glass insulator, allowing external gases to enter the cap and affecting the laser's lifespan. Summary of the Invention

[0004] (a) Technical problems to be solved:

[0005] To address the shortcomings of existing technologies, this invention provides a TO package socket for semiconductor components and a manufacturing method thereof, which has advantages such as strong sealing performance and solves the problem of low sealing performance between the copper base and the inner glass insulator, which affects the service life of the laser.

[0006] (II) Technical Solution:

[0007] To achieve the aforementioned goal of strong sealing performance, the present invention provides the following technical solution:

[0008] In a first aspect, the present invention provides a TO package socket for semiconductor components, including a base, a heat sink fixedly mounted on the top of the base, positioning grooves provided on both the left and right sides of the base, a glass insulator fixedly mounted on the inner side of the base, and pins fixedly mounted on the inner side of the glass insulator; the base includes a copper base, a first limiting hole and a second limiting hole, the first limiting hole and the second limiting hole being connected.

[0009] Furthermore, the inner diameter h of the first limiting hole is greater than the inner diameter i of the second limiting hole, and the inner diameter of the second limiting hole is greater than the outer diameter of the pin.

[0010] Secondly, the present invention provides a method for manufacturing a TO package socket for a semiconductor device, wherein the heat sink and the base are made of copper and are integrally formed. The base includes a copper base, a first limiting hole and a second limiting hole, which are formed in stages or integrally formed. The staged forming is, for example, precision machining and polishing, while the integral forming is, for example, stamping and casting.

[0011] Furthermore, the pin is fixedly connected to the through hole formed by the first limiting hole and the second limiting hole by glass melting.

[0012] Thirdly, the present invention provides another TO package socket for semiconductor components, including a base, a heat sink fixedly mounted on the top of the base, positioning grooves on both the left and right sides of the base, a glass insulator fixedly mounted on the inner side of the base, and pins fixedly mounted on the inner side of the glass insulator; the base includes a copper base, a first limiting hole, a limiting ring, and a second limiting hole, the limiting ring being connected to the second limiting hole through the first limiting hole.

[0013] Furthermore, the inner diameter j of the first limiting hole is the same as the outer diameter of the limiting ring, the inner diameter of the limiting ring is greater than the inner diameter k of the second limiting hole, and the inner diameter of the second limiting hole is greater than the outer diameter of the pin.

[0014] Fourthly, the present invention provides a method for manufacturing another type of TO package socket for semiconductor components, wherein the heat sink and the base are made of copper and are integrally formed. The base includes a copper base, a first limiting hole, a limiting ring and a second limiting hole, which are formed in stages or integrally formed. Staged forming is such as precision machining and polishing, while integral forming is such as stamping and casting.

[0015] Furthermore, the pin is fixedly connected to the through hole formed by the first limiting hole, the limiting ring, and the second limiting hole by glass melting.

[0016] (III) Beneficial Effects:

[0017] Compared with the prior art, the present invention provides a TO package socket for semiconductor devices and a manufacturing method thereof, which has the following advantages:

[0018] 1. The design and manufacturing method of the TO package socket of the semiconductor device involves designing the base as a copper base with a first limiting hole and a second limiting hole. The first limiting hole and the second limiting hole have a difference in inner diameter. This cuts off the longitudinal connection surface between the base and the inner glass insulator. After thermal expansion and cooling contraction in the subsequent eutectic process, although there is a gap between the longitudinal connection surface between the base and the inner glass insulator, the transverse connection surface between the base and the inner glass insulator remains in close contact. This intercepts and blocks the gapped longitudinal connection surface, preventing external air from seeping in, thereby achieving a strong sealing performance.

[0019] 2. The design and manufacturing method of the TO package socket for this semiconductor device involves designing the base as a copper base, a first limiting hole, a limiting ring, and a second limiting hole. The heat dissipation column and the base are made of copper and integrally formed, which facilitates processing and allows for fast heat transfer. The glass insulator enters the through hole formed by the first limiting hole, the limiting ring, and the second limiting hole in a molten state and solidifies. After being heated in the subsequent eutectic process, the difference in the inner diameter of the first limiting hole and the second limiting hole cuts off the longitudinal connection surface between the base and the inner glass insulator. The limiting ring, in conjunction with the base, nests the base and the inner glass insulator, providing limiting tension on the lateral expansion and contraction surface and blocking the longitudinal gap between the base and the inner glass insulator after cooling, thereby achieving strong sealing performance. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a TO package socket and manufacturing method for a semiconductor device according to the present invention;

[0021] Figure 2 This is a schematic diagram of the base structure of a TO package socket for a semiconductor device and a manufacturing method thereof according to the present invention.

[0022] Figure 3 This is a top view of the base structure of a TO package socket and manufacturing method for a semiconductor component according to the present invention.

[0023] Figure 4 This is a schematic diagram of the step-by-step processing of the base structure of a TO package socket and manufacturing method for a semiconductor component according to the present invention.

[0024] Figure 5 This is a schematic diagram of an integral molding mold for the base structure of a TO package socket and manufacturing method for a semiconductor component according to the present invention.

[0025] Figure 6 This is a schematic diagram of the structure of another semiconductor component TO package socket and manufacturing method according to the present invention;

[0026] Figure 7 This is a schematic diagram of the base structure of another semiconductor component TO package socket and manufacturing method according to the present invention;

[0027] Figure 8 This is a top view of the base structure of a TO package socket and manufacturing method for another semiconductor component according to the present invention.

[0028] Figure 9 This is a schematic diagram of the step-by-step processing of the base structure of another semiconductor component TO package socket and manufacturing method according to the present invention.

[0029] Figure 10 This is a schematic diagram of an integral molding mold for the base structure of a TO package socket and manufacturing method for another semiconductor component according to the present invention.

[0030] Figure 11 This is a schematic diagram of a TO package socket and manufacturing method for a semiconductor device, wherein a is a conventional TO package socket and manufacturing method for a semiconductor device, b is a TO package socket and manufacturing method for a semiconductor device according to the present invention, and c is a TO package socket and manufacturing method for another semiconductor device according to the present invention.

[0031] Figure 12 This is a partial structural diagram of the base and glass insulator of a TO package socket and manufacturing method for a semiconductor device according to the present invention. In the diagram, a represents a conventional TO package socket and manufacturing method for a semiconductor device, b represents a TO package socket and manufacturing method for a semiconductor device according to the present invention, and c represents a TO package socket and manufacturing method for another semiconductor device according to the present invention.

[0032] Figure 13 This is a top view of the structure of a TO package socket and manufacturing method for a semiconductor device according to the present invention.

[0033] In the diagram: 1 base, 2 heat dissipation column, 3 positioning groove, 4 glass insulator, 5 pin, 11 copper base, 12 / 12' first limiting hole, 13 limiting ring, 14 / 14' second limiting hole. Detailed Implementation

[0034] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] Example 1

[0036] Please see Figure 1-4A TO package socket for semiconductor components and a manufacturing method thereof, comprising a base 1, a heat sink 2 fixedly mounted on the top of the base 1, positioning grooves 3 on both the left and right sides of the base 1, a glass insulator 4 fixedly mounted on the inner side of the base 1, and pins 5 fixedly mounted on the inner side of the glass insulator 4. Figure 13 This is a top view of the TO package socket for semiconductor components.

[0037] In this example, the base 1 includes a copper base 11, a first limiting hole 12' and a second limiting hole 14', and the first limiting hole 12' and the second limiting hole 14' are connected.

[0038] In this example, the inner diameter h of the first limiting hole 12' is greater than the inner diameter i of the second limiting hole 14', and the inner diameter of the second limiting hole 14' is greater than the outer diameter of the pin 5. h is 1.5 mm and i is 1.2 mm.

[0039] In this example, the heat dissipation column 2 and the base 1 are made of copper and are integrally formed. The base 1 includes a copper base 11, a first limiting hole 12' and a second limiting hole 14' which are formed in steps. After the heat dissipation column 2 and the base 1 are stamped and formed, a limiting groove 3 is opened on the base 1. Then, the first limiting hole 12' is opened on the top of the base 1. Finally, the second limiting hole 14' is opened on the basis of the first limiting hole 12' and the base 1 is opened through.

[0040] In this example, pin 5 is fixedly connected to the through hole formed by the first limiting hole 12' and the second limiting hole 14' by glass melting.

[0041] Example 2

[0042] Please see Figure 1-3 and Figure 5 In this embodiment, an integral molding mold is used to integrally mold the heat dissipation column 2 and the copper seat 11, the first limiting hole 12' and the second limiting hole 14' included in the base 1. The rest is the same as in embodiment 1.

[0043] Example 3

[0044] Please see Figure 6-9 A design and manufacturing method for a TO package socket of a semiconductor device includes a base 1, a heat sink 2 fixedly mounted on the top of the base 1, positioning grooves 3 on both the left and right sides of the base 1, a glass insulator 4 fixedly mounted on the inner side of the base 1, and pins 5 fixedly mounted on the inner side of the glass insulator 4.

[0045] In this embodiment, the base 1 includes a copper base 11, a first limiting hole 12, a limiting ring 13, and a second limiting hole 14. The limiting ring 13 is connected to the second limiting hole 14 through the first limiting hole 12.

[0046] In this embodiment, the inner diameter j of the first limiting hole 12 is the same as the outer diameter of the limiting ring 13. The inner diameter of the limiting ring 13 is greater than the inner diameter k of the second limiting hole 14. The inner diameter of the second limiting hole 14 is greater than the outer diameter of the pin 5. j is 1.7 mm, k is 1.2 mm, and the inner diameter of the limiting ring 13 is 1.4 mm.

[0047] In this embodiment, the heat dissipation column 2 and the base 1 are made of copper and are integrally stamped. The base 1 includes a copper seat 11, a first limiting hole 12, a limiting ring 13 and a second limiting hole 14, which are formed in steps. After the heat dissipation column 2 and the base 1 are stamped, a limiting groove 3 is opened on the base 1. Then, the first limiting hole 12 is opened on the top of the base 1, and then the limiting ring 13 is opened. Finally, the second limiting hole 14 is opened on the basis of the first limiting hole 12 and the base 1 is opened through.

[0048] In this embodiment, pin 5 is fixedly connected to the through hole formed by the first limiting hole 12, the limiting ring 13, and the second limiting hole 14 by glass melting.

[0049] Example 4

[0050] Please see Figure 6-8 and Figure 10 In this embodiment, an integral molding mold is used to integrally mold the heat dissipation column 2 and the copper seat 11, the first limiting hole 12, the limiting ring 13 and the second limiting hole 14 included in the base 1. The rest is the same as in embodiment 3.

[0051] Comparative Example 1

[0052] The base 1 is made of copper, and a cylindrical through hole is made in the base using conventional methods. The pin 5 is connected to the base 1 by glass melting.

[0053] like Figure 11 and Figure 12As shown, in Comparative Example 1, the connection surface between the base 1 and the glass insulator 4 is a longitudinal straight line. When using this tube base for eutectic bonding, the base 1 and the glass insulator 4 expand outward and then contract. Due to the large difference in thermal expansion coefficients between the copper base 1 and the glass insulator 4, gaps will appear on the originally sealed contact surface between the base 1 and the glass insulator 4. In Examples 1 and 2, the base 1 is designed as a copper base 11 with a first limiting hole 12' and a second limiting hole 14'. Due to the difference in inner diameter between the first limiting hole 12' and the second limiting hole 14', the longitudinal connection surface between the base 1 and the inner glass insulator 4 is cut off. After thermal expansion and cooling contraction in the subsequent eutectic process, although there are gaps on the longitudinal connection surface between the base 1 and the inner glass insulator 4, the transverse connection surface between the base 1 and the inner glass insulator 4 remains in close contact, thus blocking the gapped longitudinal connection surface and preventing external air from seeping in. In embodiments 3 and 4, the base 1 is designed as a structure consisting of a copper base 11, a first limiting hole 12, a limiting ring 13, and a second limiting hole 14. After being heated in the subsequent eutectic process, the difference in the inner diameter of the first limiting hole 12 and the second limiting hole 14 cuts off the longitudinal connection surface between the base 1 and the inner glass insulator 4. The limiting ring 13, in conjunction with the base 1, nests the base 1 and the inner glass insulator 4 together, providing limiting tension on the transverse expansion and contraction surface and blocking the longitudinal gap between the base 1 and the inner glass insulator 4 after cooling.

[0054] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A TO package socket for a semiconductor device, comprising a base (1), characterized in that: A heat dissipation column (2) is fixedly installed on the top of the base (1). Positioning grooves (3) are opened on both the left and right sides of the base (1). A glass insulator (4) is fixedly installed on the inner side of the base (1). A pin (5) is fixedly installed on the inner side of the glass insulator (4). The base (1) includes a copper base (11), a first limiting hole (12), a limiting ring (13), and a second limiting hole (14). The limiting ring (13) is connected to the second limiting hole (14) through the first limiting hole (12). The inner diameter of the first limiting hole (12) is the same as the outer diameter of the limiting ring (13). The inner diameter of the limiting ring (13) is larger than the inner diameter of the second limiting hole (14). The inner diameter of the second limiting hole (14) is larger than the outer diameter of the pin (5). The limiting ring (13) is a groove, which is opened below the first limiting hole (12) and located outside the second limiting hole (14).

2. The method for manufacturing a TO package socket for a semiconductor device according to claim 1, characterized in that: The heat dissipation column (2) and the base (1) are made of the same material and are integrally formed. The base (1) includes a copper seat (11), a first limiting hole (12), a limiting ring (13), and a second limiting hole (14), which are formed in steps or integrally formed.

3. The method for manufacturing a TO package socket for a semiconductor device according to claim 2, characterized in that: The pin (5) is fixedly connected to the through hole formed by the first limiting hole (12), the limiting ring (13), and the second limiting hole (14) by glass melting.

Images