A passive frequency conversion structure and method for generating two-way time-varying signals based on transistors

Abstract

The present invention discloses a passive frequency conversion structure and method for generating two-way time-varying signals based on a transistor, wherein the passive frequency conversion structure includes an input impedance matching network, a time-varying tuning circuit, a source resonant circuit, a drain resonant circuit, a source output impedance matching network, and a drain output impedance matching network; the input impedance matching network performs impedance transformation on a microwave input signal; the time-varying tuning circuit modulates the input signal into two-way time-varying tuning signals; the source and drain resonant circuits can respectively screen the tuning signals to obtain resonant frequency signals; the source and drain output impedance matching networks can output the resonant frequency signals with maximum efficiency. The present invention utilizes the characteristics that the gate-drain junction capacitance and the gate-source junction capacitance of the transistor change due to the change of the voltage loaded at both ends, and combines with an external inductor to form a two-way time-varying reactance circuit, and innovatively realizes the generation of two-way passive frequency conversion signals based on one transistor, and has broad application prospects.

Description

Technical Field

[0001] The present invention relates to the field of electronic information technology, and in particular, to a passive frequency conversion structure and method for generating two time-varying signals based on transistors. Background Art

[0002] With the rapid development of wireless communication, microwave sensing, and Internet of Things technologies, passive wireless technologies are widely used in multiple fields such as wireless sensor networks, intelligent monitoring, structural health monitoring, and the Internet of Things because they do not require external power supply. However, existing passive wireless technologies still have many limitations in terms of signal processing efficiency, multi-channel signal generation, and adaptation to complex environments.

[0003] Traditional passive frequency conversion technologies are based on the non-linear characteristics of semiconductor mixers. By mixing the input signal with the local oscillator signal, they can only achieve frequency conversion for a single channel, which is inadequate in multi-target and multi-channel application scenarios.

[0004] The patent document of invention patent CN110247288A (applicant: University of Electronic Science and Technology of China) discloses a room-temperature semiconductor maser and its application. In this patent, the drain input signal fp is used as a pump microwave signal to excite the polaritons in the transistor with a heterojunction to a high energy level, and then the resonant network (resonant frequency fr) connected to the gate is used to transition the high-energy-level polaritons to a specified low energy level, thereby generating an output signal with a frequency of fa = fp - fr. However, due to the limitations of the circuit structure and the fact that the energy level of the output signal is lower than that of the pump signal, only one output signal with a frequency lower than the input signal can be output at the source.

[0005] The patent document of invention patent CN118659760A (applicant: Chengdu Simontec Technology Development Co., Ltd.) discloses a passive wireless sensor based on a piezoelectric resonator and a varactor diode. After exciting the semiconductor circuit with a microwave signal, it can only generate one frequency-converted signal without adding a semiconductor circuit.

[0006] The patent document of invention patent CN115940821B (applicant: Chengdu Entropy Yang Technology Co., Ltd.) discloses a passive frequency conversion structure and a passive frequency conversion method. The input signal feeds the microwave signal into the transistor with a two-dimensional electron gas from the drain through the input matching network; then the resonant network connected to the source converges the energy of the fed microwave signal; the microwave signal after energy convergence is then used by the passive crystal / ceramic resonator connected to the gate to generate an oscillation signal; and then micro-frequency conversion can be realized under the condition of no DC power supply through mixing.

[0007] The invention patent document CN118573122A (applicant: Zhejiang Longgan Technology Co., Ltd.) discloses a passive frequency conversion structure, a sensor, a method and a system. By utilizing the electron migration channel in the modulation element, a signal transmission channel is established without a DC bias, enabling the fed microwave signal to be transmitted between ports. The first resonant circuit is used for energy convergence, and the second resonant circuit realizes the frequency conversion or amplification of the signal, thereby improving the energy utilization efficiency and signal transmission efficiency.

[0008] Among them, the passive frequency conversion structures disclosed in the invention patent documents CN118573122A and CN115940821B can only be input through a fixed port, and the connection manner between the resonant network or resonator and the modulation element (or a transistor with a two-dimensional electron gas) is fixed. For example, in CN115940821B, the signal is input through the drain of the transistor with a two-dimensional electron gas after passing through the input matching network, the source is connected to the resonant network, and the gate is connected to the passive piezoelectric resonator. The invention patent document CN118573122A is similar. Such a connection method can only output one path of frequency-converted signal, which limits its application scenarios.

[0009] Furthermore, the frequency conversion methods mentioned in the invention patent documents CN118573122A and CN115940821B have a more complex circuit structure and a relatively single application flexibility. These two patent documents require that the source be connected to the resonant network (or the first resonant circuit) for energy convergence of the input microwave signal, and the gate be connected to the passive piezoelectric resonator (or the second resonant circuit) that generates an oscillation signal for the fed microwave signal and feeds the oscillation signal into the transistor with a two-dimensional electron gas to achieve the effect of passive frequency conversion.

[0010] With the rapid development of wireless sensor networks and multifunctional composite sensors, there is an urgent need for a frequency conversion circuit that can generate multiple paths of frequency-converted signals and has a more flexible connection manner and circuit structure to open up the application market of passive wireless frequency conversion technology. However, most of the existing technologies are limited to single-path signal output. If multiple signals need to be generated, usually a complex circuit structure needs to be introduced additionally, increasing the system design difficulty. In addition, traditional passive frequency conversion systems are highly dependent on the environment. In a complex electromagnetic environment or a high-noise scenario, the reliability and stability of the signal are easily affected, limiting their application in harsh environments. Summary of the Invention

[0011] To solve the above problems, the present invention proposes a passive frequency conversion structure and method for generating two paths of time-varying signals based on a transistor, innovatively realizing the generation of two paths of frequency-converted signals based on one transistor, overcoming the problems of power consumption and channel limitations in traditional technologies, significantly improving the energy utilization efficiency and the environmental adaptability of the system, and providing a new technical solution for complex application scenarios.

[0012] The technical solution adopted by the present invention is as follows:

[0013] A passive frequency conversion structure for generating two time-varying signals based on a transistor, comprising an input impedance matching network, a time-varying tuning circuit, a source resonance circuit, a drain resonance circuit, a source output impedance matching network, and a drain output impedance matching network; the time-varying tuning circuit includes an inductor and a transistor, the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonance circuit and the source output impedance matching, and the drain is respectively connected to the drain resonance circuit and the drain output impedance matching network;

[0014] The input impedance matching network is configured to receive an input signal and enable the input signal to enter the time-varying tuning circuit with maximum power; the time-varying tuning circuit is configured to generate two time-varying tuning signals based on the characteristics of the gate-source junction capacitance and the gate-drain junction capacitance of the transistor changing with the applied voltage, and in combination with the inductor; the source resonance circuit and the drain resonance circuit can respectively screen the tuning signals to obtain resonance frequency signals; the source output impedance matching network and the drain output impedance matching network can at least enable the resonance frequency signals to be output with maximum efficiency.

[0015] Further, the output impedance matching of the source output impedance matching network and the drain output impedance matching network can be configured in the following modes respectively or simultaneously:

[0016] Mode 1: The source output impedance matching network performs output matching on the resonance frequency signal generated by the source resonance circuit, and the drain output impedance matching network performs output matching on the resonance frequency signal generated by the drain resonance circuit;

[0017] Mode 2: The source output impedance matching network performs output matching on the mixed frequency signal after mixing the resonance frequency signal generated by the source resonance circuit with the input signal, and the drain output impedance matching network performs output matching on the mixed frequency signal after mixing the resonance frequency signal generated by the drain resonance circuit with the input signal.

[0018] Further, in Mode 1, the output signal of the source output impedance matching network includes a signal having the same frequency as the resonance frequency of the source resonance circuit and the output signal of the drain output impedance matching network includes a signal having the same frequency as the resonance frequency of the drain resonance circuit ;

[0019] In Mode 2, the signal having the same frequency as the resonance frequency of the source resonance circuit will be reflected back to the transistor. Due to the non-linear characteristics, gain amplification of the transistor, and the Manley-Rowe formula, the resonance frequency is The signal of is mixed and amplified with the input signal of to generate a mixed-frequency signal , and is output from the source output impedance matching network; the signal with the same resonant frequency as the resonant frequency of the drain resonant circuit will be reflected back to the transistor. Due to the non-linear characteristics, gain amplification of the transistor, and the Manley-Rowe formula, the signal with the resonant frequency is mixed and amplified with the input signal of to generate a mixed-frequency signal

[0020] and is output from the drain output impedance matching network.

[0021] Furthermore, in Mode 2: When the resonant frequency of the source resonant circuit is, the mixed-frequency signal

[0022] can be output through the input impedance matching network; where Q is the quality factor of the input impedance matching network; When the resonant frequency of the drain resonant circuit is, the mixed-frequency signal

[0023] can be output through the input impedance matching network.

[0024] Furthermore, the source output impedance matching network and the drain output impedance matching network can output the same or different signals: When the resonant frequency of the source resonant circuit is equal to the resonant frequency of the drain resonant circuit

[0025] the source output impedance matching network and the drain output impedance matching network output the same signal; When the resonant frequency of the source resonant circuit is not equal to the resonant frequency of the drain resonant circuit

[0026] the source output impedance matching network and the drain output impedance matching network output different signals.

[0027] Further, the transistor types of the time-varying tuning circuit include bipolar transistors and unipolar transistors. The types of bipolar transistors include NPN-type triodes and PNP-type triodes. The types of unipolar transistors include JFET junction field effect transistors, MOSFET metal oxide field effect transistors, and MODFET modulation-doped field effect transistors.

[0028] Further, the source resonance circuit, drain resonance circuit, source output impedance matching network, and drain output impedance matching network can be configured simultaneously, or only the source resonance circuit and the source output impedance matching network can be configured, or only the drain resonance circuit and the drain output impedance matching network can be configured.

[0029] Further, when the input signal is a microwave AC signal, the direction and magnitude of its voltage and current change periodically with time, and there is no special requirement for the directionality of the junction capacitance. Therefore, the input signal can be input from the gate direction of the transistor in the time-varying tuning circuit, or from the drain or source direction of the transistor in the time-varying tuning circuit, without affecting the signal transmission performance or the overall function.

[0030] A passive frequency conversion method for generating two time-varying signals based on a transistor, comprising:

[0031] Receiving an input signal through an input impedance matching network and making the input signal enter the time-varying tuning circuit with maximum power;

[0032] The time-varying tuning circuit generates two time-varying tuning signals based on the characteristics of the gate-source junction capacitance and gate-drain junction capacitance of the transistor changing with the applied voltage, and combines with an inductor. The gate of the transistor is connected to the input impedance matching network through an inductor, the source is respectively connected to a source resonance circuit and a source output impedance matching, and the drain is respectively connected to a drain resonance circuit and a drain output impedance matching network;

[0033] Screening the tuning signals through the source resonance circuit and the drain resonance circuit respectively to obtain resonance frequency signals;

[0034] Making the resonance frequency signals output with maximum efficiency through the source output impedance matching network and the drain output impedance matching network.

[0035] The beneficial effects of the present invention are as follows:

[0036] 1. By innovatively utilizing the characteristics of the transistor gate-source and gate-drain junction capacitances that vary with the applied voltage, and combining with an external inductor to form two-time-varying reactance circuits, high-efficiency frequency conversion is achieved under the condition of no DC power supply drive. Breaking through the limitations of traditional passive frequency conversion technology on a single-path signal, it can generate two independent time-varying signals simultaneously, significantly improving the signal processing ability of the system and providing a more efficient solution for multi-target and multi-channel applications in complex scenarios.

[0037] 2. By reasonably configuring the resonant frequencies of the source and drain resonant circuits, the frequency purity of the output signal is significantly improved, reducing the spectral distortion caused by non-linear effects. Combined with the optimized design of the matching network, the system can maintain the stability and consistency of the signal while achieving high-efficiency frequency conversion, thus maintaining excellent performance in complex electromagnetic environments or high-noise scenarios.

[0038] 3. The structural design is simple and flexible. The ability of a single transistor to generate multi-path signals significantly reduces the circuit complexity and manufacturing cost, and is convenient for integration with other circuits. It provides a more economical and efficient solution for large-scale production and deployment applications in the later stage.

[0039] In summary, the present invention has broad application potential in the fields of wireless communication, Internet of Things, structural health monitoring, smart agriculture, etc. By effectively improving the signal processing efficiency and environmental adaptability, the present invention not only overcomes many limitations of the existing technology, but also provides technical support for emerging multi-functional composite sensors and wireless system designs in complex scenarios, and has important industrialization value. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a block diagram of the principle of a passive frequency conversion structure for generating two-time-varying signals based on a transistor according to Embodiment 1 of the present invention.

[0041] Figure 2 It is a circuit diagram of the passive frequency conversion structure for generating two-time-varying signals based on a transistor according to Embodiment 1 of the present invention.

[0042] Figure 3 It is a block diagram of the principle of a passive frequency conversion structure for generating two-time-varying signals based on a transistor according to Embodiment 2 of the present invention.

[0043] Figure 4 It is a circuit diagram of the passive frequency conversion structure for generating time-varying signals based on a transistor according to Embodiment 2 of the present invention.

[0044] Figure 5 It is a block diagram of the principle of a passive frequency conversion structure for generating time-varying signals based on a transistor according to Embodiment 3 of the present invention.

[0045] Figure 6This is the circuit diagram of the passive frequency conversion structure for generating time-varying signals based on transistors in Embodiment 3 of the present invention.

[0046] Figure 7 This is one of the principle block diagrams of the passive frequency conversion structure for generating time-varying signals based on transistors in Embodiment 4 of the present invention.

[0047] Figure 8 This is one of the circuit diagrams of the passive frequency conversion structure for generating time-varying signals based on transistors in Embodiment 4 of the present invention.

[0048] Figure 9 This is the second principle block diagram of the passive frequency conversion structure for generating time-varying signals based on transistors in Embodiment 4 of the present invention.

[0049] Figure 10 This is the second circuit diagram of the passive frequency conversion structure for generating time-varying signals based on transistors in Embodiment 4 of the present invention. Detailed implementation manners

[0050] In order to have a clearer understanding of the technical features, objectives, and effects of the present invention, the detailed implementation manners of the present invention are now described. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention, that is, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0051] Embodiment 1

[0052] As Figure 1 shown, this embodiment provides a passive frequency conversion structure for generating two paths of time-varying signals based on transistors, including an input impedance matching network, a time-varying tuning circuit, a source resonance circuit, a drain resonance circuit, a source output impedance matching network, and a drain output impedance matching network; the time-varying tuning circuit includes an inductor and a transistor, the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonance circuit and the source output impedance matching, and the drain is respectively connected to the drain resonance circuit and the drain output impedance matching network.

[0053] Among them, the input impedance matching network is configured to receive an input signal and enable the input signal to enter the time-varying tuning circuit with the maximum power; the time-varying tuning circuit is configured to generate two paths of time-varying tuning signals based on the characteristics of the gate-source junction capacitance and the gate-drain junction capacitance of the transistor changing with the applied voltage and in combination with the inductor; the source resonance circuit and the drain resonance circuit can respectively screen the tuning signals to obtain resonance frequency signals; the source output impedance matching network and the drain output impedance matching network can at least enable the resonance frequency signals to be output with the maximum efficiency.

[0054] It should be noted that the inductor of the time-varying tuning circuit can be an external actual inductor or a parasitic inductor in the circuit.

[0055] The specific implementation circuit of this embodiment is as Figure 2 shown, where the input impedance matching network is composed of inductor L2 and inductor L7, the time-varying tuning circuit is composed of inductor L1 and transistor Q, the source and drain resonant circuits are configured as parallel LC circuits composed of capacitors and inductors, the drain output impedance matching network is composed of inductor L5 and capacitor C3, and the source output impedance matching network is composed of inductor L6 and capacitor C4.

[0056] Among them, inductors L2 and L7 feed the microwave signal with a frequency of input from port Port1 into the gate of transistor Q with the maximum power. Due to the gate-source junction capacitance and the gate-drain junction capacitance of transistor Q being equivalent to a varactor diode, it conforms to the following formula:

[0057]

[0058] In the formula, represents the gate-source junction capacitance or the gate-drain junction capacitance , is the junction capacitance when the reverse bias voltage is zero, is the reverse bias voltage, is the barrier voltage of the transistor junction capacitance, is a constant coefficient.

[0059] Therefore, by utilizing the characteristic that the capacitance value of the internal junction capacitance of transistor Q changes with the voltage applied across its two ends, combined with inductor L1, two time-varying tuning signals are generated at the source and drain of transistor Q, and this signal contains a rich spectrum. Configure the resonant frequencies of the source and drain resonant circuits as and . For the time-varying tuning signal, the high-frequency signal will go to the ground through the capacitor, and the low-frequency signal will go to the ground through the inductor. Signals within a certain bandwidth close to the resonant frequencies of the resonant circuits of and will be retained in the circuit. Configure the source and drain output impedance matching networks to match the output of the signals with the resonant frequencies of their source and drain resonant circuits. Then, signals within a certain bandwidth close to the resonant frequencies of and will be output from port Port3 and port Port2.

[0060] Preferably, if the source and drain output impedance matching networks are configured to match the output of the mixed-frequency signals after mixing the resonant frequencies of their source and drain resonant circuits with the frequency of the input microwave signal, then the resonant frequencies are and The signals will be reflected back to the transistor. Due to the non-linear characteristics, gain amplification of the transistor, and the Menley-Rowe formula, the resonant frequency is and The signals will mix and amplify with the input microwave signal with a frequency of to generate a mixed-frequency signal which is output from Port3 of the source output impedance matching network; the mixed-frequency signal is output from Port2 of the drain output impedance matching network.

[0061] Preferably, if the source output impedance matching is not configured, and the resonant frequency of the source resonant circuit is (where is the frequency of the input microwave signal, and Q is the quality factor of the input impedance matching network), then the mixed-frequency signal can be output from Port1 through the input impedance matching network.

[0062] Preferably, if the drain output impedance matching is not configured, and the resonant frequency of the drain resonant circuit is (where is the frequency of the input microwave signal, and Q is the quality factor of the input impedance matching network), then the mixed-frequency signal can be output from Port1 through the input impedance matching network.

[0063] Preferably, the drain resonant circuit and the gate resonant circuit can adopt transducers such as piezoelectric resonators, surface acoustic wave resonators, or bulk acoustic wave resonators, and the inherent resonant frequency of the transducer should be or .

[0064] It should be noted that due to the difference between the gate-drain junction capacitance and the gate-source junction capacitance, the circuit turn-on working threshold will change.

[0065] Correspondingly, this embodiment also provides a passive frequency conversion method for generating two time-varying signals based on a transistor, including the following steps:

[0066] Receiving an input signal through an input impedance matching network and enabling the input signal to enter the time-varying tuning circuit with maximum power;

[0067] Based on the characteristics of the gate-source junction capacitance and the gate-drain junction capacitance of the transistor changing with the applied voltage, and combined with an inductor, the time-varying tuning circuit generates two time-varying tuning signals; the gate of the transistor is connected to the input impedance matching network through an inductor, the source is respectively connected to the source resonant circuit and the source output impedance matching, and the drain is respectively connected to the drain resonant circuit and the drain output impedance matching network;

[0068] The resonant frequency signal is obtained by screening the tuning signal through the source resonant circuit and the drain resonant circuit respectively;

[0069] The resonant frequency signal is output with maximum efficiency through the source output impedance matching network and the drain output impedance matching network.

[0070] Embodiment 2

[0071] As Figure 3 shown, this embodiment provides a passive frequency conversion structure based on a transistor to generate two time-varying signals, including an input impedance matching network, a time-varying tuning circuit, a drain resonant circuit, and a drain output impedance matching network.

[0072] The specific implementation circuit of this embodiment is as Figure 4 shown, where the input impedance matching network is composed of inductors L2 and L5, the time-varying tuning circuit is composed of inductor L1 and transistor Q, the drain resonant circuit is configured as a parallel LC circuit composed of capacitor C1 and inductor L3, and the drain output impedance matching network is composed of inductor L4 and capacitor C2.

[0073] Among them, inductors L2 and L5 feed the microwave signal with a frequency of input from port Port1 into the gate of transistor Q with maximum power. Due to the gate-drain junction capacitance of transistor Q being equivalent to a varactor diode, it conforms to the following formula:

[0074]

[0075] In the formula, is the junction capacitance when the reverse bias voltage is zero, is the reverse bias voltage, is the barrier voltage of the transistor junction capacitance, is a constant coefficient.

[0076] Therefore, by utilizing the characteristic that the capacitance value of the transistor gate-drain junction capacitance changes with the voltage applied across it, and combining with the inductive impedance characteristic exhibited by the input impedance matching, a time-varying tuning signal is generated at the drain of the transistor, and this signal contains a rich spectrum. The resonant frequency of the drain resonant circuit is configured as , for the high-frequency signals in the time-varying harmonic waves, they will go from the capacitor to the ground, and the low-frequency signals will go from the inductor to the ground. The signals within a certain bandwidth close to the resonant frequency of the resonant circuit will be retained in the circuit. The drain output impedance matching network is configured to match the output of the resonant frequency signal of its drain resonant circuit, then the signals within a certain bandwidth close to the resonant frequency will be output from port Port2.

[0077] Preferably, if the drain output impedance matching network is configured to match the output of the mixed frequency signal after mixing the resonant frequency of its drain resonant circuit with the input microwave signal frequency, the resonant frequency is The signal will be reflected back to the transistor. Due to the non-linear characteristics, gain amplification of the transistor, and the Menley-Rowe formula, the resonant frequency is The signal will mix and amplify with the input microwave signal with a frequency of to generate a mixed frequency signal which is output from the port Port2 of the source output impedance matching network.

[0078] Preferably, if the drain output impedance matching is not configured and the resonant frequency of the drain resonant circuit is (where is the frequency of the input microwave signal and Q is the quality factor of the input impedance matching network), then the mixed mixed frequency signal can be output from the port Port1 through the input impedance matching network.

[0079] Preferably, the drain resonant circuit can adopt transducers such as piezoelectric resonators, surface acoustic wave resonators, or bulk acoustic wave resonators, and the natural resonant frequency of the transducer should be .

[0080] It should be noted that in this embodiment, the source of the transistor Q in the time-varying tuning circuit is set to be floating. The overall structure design is simple and flexible. The multi-signal generation ability of a single transistor significantly reduces the circuit complexity and manufacturing cost, and is convenient for integration with other circuits.

[0081] Embodiment 3

[0082] As Figure 5 shown, this embodiment provides a passive frequency conversion structure for generating two time-varying signals based on a transistor, including an input impedance matching network, a time-varying tuning circuit, a source surface acoustic wave resonator, and a source output impedance matching network.

[0083] The specific implementation circuit of this embodiment is as Figure 6 shown, where the input impedance matching network is composed of an inductor L3 and C1, the time-varying tuning circuit is composed of an inductor L1 and a transistor Q, the resonant frequency of the source surface acoustic wave resonator X1 is , and the source output matching network is composed of an inductor L2 and a capacitor C2.

[0084] Among them, the inductor L3 and C1 feed the microwave signal with a frequency of input from the port Port1 into the gate of the transistor Q with the maximum power. Due to the gate-source junction capacitance of the transistor Q being equivalent to a varactor diode, it conforms to the following formula:

[0085]

[0086] Wherein, is the junction capacitance when the reverse bias voltage is zero, is the reverse bias voltage, is the barrier voltage of the transistor junction capacitance, is a constant coefficient.

[0087] Therefore, by utilizing the characteristic that the capacitance value of the transistor gate-source junction capacitance changes with the voltage applied across it, and combining with the inductive impedance characteristic exhibited by the input impedance matching, a time-varying tuning signal is generated at the source of the transistor, and this signal contains a rich spectrum. The signals in the time-varying harmonic waves that are higher and lower than the resonance frequency of the source surface acoustic wave resonator X1 will flow back to the ground through X1, and the signals within a certain bandwidth close to the resonance frequency of X1 will be retained in the circuit. Configure the source output impedance matching network to be output-matched to the resonance frequency of its surface acoustic wave resonator X1, then the signals within a certain bandwidth close to the resonance frequency will be output from port Port2.

[0088] Preferably, if the source output impedance matching network is configured to be output-matched to the mixing frequency signal after mixing the resonance frequency of the source surface acoustic wave resonator and the input microwave signal frequency, then the signal with the resonance frequency of will be reflected back to the transistor. Due to the non-linear characteristics, gain amplification of the transistor, and the Manley-Rowe formula, the signal with the resonance frequency of will mix and amplify with the input microwave signal with the frequency of to generate a mixing frequency signal which is output from port Port2 via the source output impedance matching network.

[0089] Preferably, the source resonance circuit can adopt an LC resonance circuit, a piezoelectric resonator, or a bulk acoustic wave resonator, etc.

[0090] Preferably, if the source output impedance matching is not configured, and the resonance frequency of the source resonance circuit (where is the frequency of the input microwave signal, and Q is the quality factor of the input impedance matching network), then the mixed mixed signal can be output from port Port1 via the input impedance matching network.

[0091] It should be noted that in this embodiment, the drain of the transistor Q in the time-varying tuning circuit is set to be floating. The overall structure design is simple and flexible. The multi-signal generation ability of a single transistor significantly reduces the circuit complexity and manufacturing cost, and is convenient for integration with other circuits.

[0092] Example 4

[0093] Based on Example 2, considering that the input signal is a microwave AC signal, whose voltage and current directions and magnitudes change periodically with time, the junction capacitance value thus behaves as a passive device related to the transient voltage. Specifically, the capacitance value of the junction capacitance is only determined by the instantaneous bias voltage, and mainly acts as a parasitic capacitance during the propagation of the microwave signal, showing a non-directional impedance characteristic for signal transmission. Therefore, there are no special requirements for the directionality of the junction capacitance, and the connection methods of the input impedance matching network and the gate, drain, and source electrodes of the transistor Q in Example 2 can be flexibly exchanged without affecting the signal transmission performance or the overall function of the circuit.

[0094] As Figure 7 shown is a passive frequency conversion structure based on a transistor for generating a time-varying signal in this embodiment. The input microwave signal with a frequency of after passing through the input impedance matching network, utilizes the characteristic that the capacitance value of the drain-gate junction capacitance of the transistor changes with the voltage applied across it. The inductor L1 and the drain-gate junction capacitance of the transistor will also generate a tuned signal with a rich spectrum of time variation. Correspondingly, the specific implementation circuit diagram is as Figure 8 shown. The input impedance matching network consists of inductors L2 and L5. The time-varying tuning circuit consists of inductor L1 and transistor Q. The gate resonance circuit is configured as a parallel LC circuit composed of capacitor C1 and inductor L3. The gate output impedance matching network consists of inductor L4 and capacitor C2. Similar to Example 2, different microwave signals with different frequencies can be output from port Port1 in this embodiment by configuring different gate output impedance matching networks. Among them, the source electrode of transistor Q in the time-varying tuning circuit is set floating. The overall structure design is simple and flexible. The multi-signal generation ability of a single transistor significantly reduces the circuit complexity and manufacturing cost, and is also convenient for integration with other circuits.

[0095] It should be noted that the input microwave signal can also be directly fed into the source electrode of the transistor after passing through the input impedance matching network and the inductor. As Figure 9 shown is another passive frequency conversion structure based on a transistor for generating a time-varying signal in this embodiment, and its specific implementation circuit is as Figure 10 shown. Among them, the drain electrode of transistor Q in the time-varying tuning circuit is set floating. The overall structure design is simple and flexible. The multi-signal generation ability of a single transistor significantly reduces the circuit complexity and manufacturing cost, and is also convenient for integration with other circuits.

[0096] Preferably, if the gate output impedance matching is not configured, and the resonance frequency of the gate resonance circuit is (where (where \(f\) is the frequency of the input microwave signal and \(Q\) is the quality factor of the input impedance matching network), then the mixed-frequency mixed-frequency signal can be output from port Port1 through the input impedance matching network.

[0097] The above are only the preferred embodiments of the present invention. It should be understood that the present invention is not limited to the form disclosed herein, should not be regarded as excluding other embodiments, but can be used in various other combinations, modifications and environments, and can be changed within the scope of the concept described herein through the above teachings or the technology or knowledge in the relevant field. And the changes and alterations made by those skilled in the art without departing from the spirit and scope of the present invention shall fall within the protection scope of the appended claims of the present invention.

Claims

1. A passive frequency conversion structure based on transistors to generate two-way time-varying signals, characterized in that: It includes an input impedance matching network, a time-varying tuning circuit, a source resonant circuit, a drain resonant circuit, a source output impedance matching network, and a drain output impedance matching network; the time-varying tuning circuit includes an inductor and a transistor, the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonant circuit and the source output impedance matching, and the drain is respectively connected to the drain resonant circuit and the drain output impedance matching network; The input impedance matching network is configured to receive an input signal and allow the input signal to enter the time-varying tuning circuit at maximum power; the time-varying tuning circuit is configured to generate two time-varying tuning signals based on the characteristics of the gate-source junction capacitance and the gate-drain junction capacitance of the transistor changing with the loading voltage and in combination with the inductor; The source resonant circuit and the drain resonant circuit can respectively filter the tuning signal to obtain a resonant frequency signal; The output impedance matching of the source output impedance matching network and the drain output impedance matching network can be configured separately or simultaneously as the following modes: Mode 1: the source output impedance matching network performs output matching on the resonant frequency signal generated by the source resonant circuit, and the drain output impedance matching network performs output matching on the resonant frequency signal generated by the drain resonant circuit; Mode 2: The source output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the source resonant circuit is mixed with the input signal, and the drain output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the drain resonant circuit is mixed with the input signal.

2. According to claim 1, a passive frequency conversion structure based on transistors to generate two-way time-varying signals is characterized in that: In mode 1, the output signal of the source output impedance matching network includes a signal having a resonant frequency corresponding to the source resonant circuit. The same signal, the output signal of the drain output impedance matching network includes the resonant frequency of the drain resonant circuit Same signal; In mode 2, the resonant frequency of the source resonant circuit is The same signal will be reflected back to the transistor, and due to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal and frequency are The input signal is mixed and amplified to generate a mixing frequency signal and output from the source output impedance matching network; the resonant frequency of the drain resonant circuit The same signal will be reflected back to the transistor, and due to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal and frequency are The input signal is mixed and amplified to generate a mixing frequency signal and output from the drain output impedance matching network.

3. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 2, characterized in that: In mode 2, when the resonant frequency of the source resonant circuit is When the mixing frequency signal Can be output through the input impedance matching network; when the resonant frequency of the drain resonant circuit When the mixing frequency signal It can be output through an input impedance matching network; where Q is the quality factor of the input impedance matching network.

4. A passive frequency conversion structure based on transistors to generate two-way time-varying signals according to any one of claims 1 to 3, characterized in that: The source output impedance matching network and the drain output impedance matching network can output the same or different signals; When the resonant frequency of the source resonant circuit Equal to the resonant frequency of the drain resonant circuit When , the source output impedance matching network and the drain output impedance matching network output the same signal; When the resonant frequency of the source resonant circuit Not equal to the resonant frequency of the drain resonant circuit When , the source output impedance matching network and the drain output impedance matching network output different signals.

5. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: The source resonant circuit and the drain resonant circuit include an LC resonant circuit or an equivalent resonant circuit, the equivalent resonant circuit includes a transducer and a circuit structure consisting of a transducer and a capacitor and an inductor, and the transducer includes a piezoelectric resonator, a surface acoustic wave resonator or a bulk acoustic wave resonator.

6. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: The transistor types of the time-varying tuning circuit include bipolar transistors and unipolar transistors. The types of the bipolar transistors include NPN transistors and PNP transistors. The types of the unipolar transistors include JFET junction field effect transistors, MOSFET metal oxide field effect transistors and MODFET modulation doped field effect transistors.

7. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: The source resonant circuit, drain resonant circuit, source output impedance matching network and drain output impedance matching network can be configured simultaneously, or only the source resonant circuit and the source output impedance matching network can be configured, or only the drain resonant circuit and the drain output impedance matching network can be configured.

8. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: When the input signal is a microwave AC signal, the direction and magnitude of its voltage and current change periodically with time, so the input signal can be input from the gate direction of the transistor in the time-varying tuning circuit, or from the drain or source direction of the transistor in the time-varying tuning circuit.

9. A passive frequency conversion method based on transistors to generate two-way time-varying signals, characterized in that: include: receiving an input signal through an input impedance matching network and allowing the input signal to enter the time-varying tuning circuit at maximum power; The time-varying tuning circuit is based on the characteristics that the gate-source junction capacitance and the gate-drain junction capacitance of the transistor vary with the loading voltage, and combines the inductor to generate two time-varying tuning signals; the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonance circuit and the source output impedance matching, and the drain is respectively connected to the drain resonance circuit and the drain output impedance matching network; The tuning signal is screened by a source resonant circuit and a drain resonant circuit to obtain a resonant frequency signal; The output impedance matching of the source output impedance matching network and the drain output impedance matching network can be configured separately or simultaneously as the following modes: Mode 1: the source output impedance matching network performs output matching on the resonant frequency signal generated by the source resonant circuit, and the drain output impedance matching network performs output matching on the resonant frequency signal generated by the drain resonant circuit; Mode 2: The source output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the source resonant circuit is mixed with the input signal, and the drain output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the drain resonant circuit is mixed with the input signal.

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