Plasma processing method and plasma processing apparatus

Abstract

Provided is a technique for reducing unevenness in the distribution of ion flux. Provided is a plasma processing method in which plasma is generated in a chamber and plasma processing is performed on a substrate in a plasma processing apparatus having the chamber and a substrate support part disposed in the chamber. The plasma processing method comprises the following steps: (a) storing first distribution data in advance, wherein the first distribution data is data related to the distribution of ion flux generated between plasma generated in the chamber and a first substrate arranged on the substrate supporting part; (b-a) arranging a second substrate on the substrate supporting part; and (b-b) a plasma processing step in which plasma is generated in the chamber on the basis of the first distribution data, and plasma processing is performed on the second substrate.

Description

Technical Field

[0001] Illustrative embodiments of the present invention relate to a plasma processing method and a plasma processing apparatus. Background Art

[0002] As a technology for measuring plasma on the wafer surface, there is an on-wafer monitoring system (On-wafer Monitoring System) described in Patent Document 1.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2003-282546 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technique for reducing uneven distribution of ion flux.

[0008] Technical solutions for solving technical problems

[0009] In an exemplary embodiment of the present invention, a plasma processing method is provided, in which, in a plasma processing device having a chamber and a substrate support portion arranged in the chamber, plasma is generated in the chamber to perform plasma processing on a substrate, the plasma processing method comprising: (a) a step of pre-saving first distribution data, wherein the first distribution data is data on the distribution of ion flux generated between the plasma generated in the chamber and the first substrate arranged in the substrate support portion; (ba) a step of configuring a second substrate on the substrate support portion; and (bb) a plasma processing step of generating plasma in the chamber based on the first distribution data to perform plasma processing on the second substrate.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment of the present invention, a technology for reducing uneven distribution of ion flux can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0013] Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0014] Figure 3 1 is a diagram showing an example of the upper surface of the substrate supporting portion 11 .

[0015] Figure 4 1 is a diagram showing an example of a cross section of the substrate supporting portion 11 .

[0016] Figure 5 It is a block diagram showing an example of the structure of the control substrate 80 .

[0017] Figure 6 is a flow chart showing a plasma processing method according to an exemplary embodiment.

[0018] Figure 7 This is a flowchart showing an example of step ST1.

[0019] Figure 8 This is a flowchart showing an example of step ST2.

[0020] Fig. 9 This is a diagram showing an example of reference distribution data.

[0021] Fig.10 This is a flowchart showing an example of step ST3.

[0022] Fig.11 This is a diagram showing an example of the first distribution data.

[0023] Fig.12 This is a flowchart showing an example of step ST4.

[0024] Fig.13A FIG. 1 is a diagram schematically showing an example of an ion flux generated between the substrate W and the ring assembly 112 and the plasma.

[0025] Fig. 13B is the ion flux Γ i A graph of an example of the distribution of .

[0026] Fig.14A FIG. 1 is a diagram schematically showing an example of an ion flux generated between the substrate W and the ring assembly 112 and the plasma.

[0027] Fig. 14B is the ion flux Γ i A graph of an example of the distribution of .

[0028] Fig.15 This is a flowchart showing an example of the in-plane correction procedure.

[0029] Fig.16 It is a diagram for explaining another configuration example of a capacitive coupling type plasma processing apparatus. DETAILED DESCRIPTION

[0030] Hereinafter, each embodiment of the present invention will be described.

[0031] In an exemplary embodiment, a plasma processing method is provided, in which, in a plasma processing apparatus having a chamber and a substrate support portion disposed in the chamber, plasma is generated in the chamber to perform plasma processing on a substrate. The plasma processing method includes: (a) pre-storing first distribution data, the first distribution data being data on the distribution of ion flux generated between the plasma generated in the chamber and the first substrate disposed on the substrate support portion; (ba) disposing a second substrate on the substrate support portion; and (bb) generating plasma in the chamber based on the first distribution data to perform plasma processing on the second substrate.

[0032] In an exemplary embodiment, the saving step of (a) includes: (aa) a step of configuring a first substrate on a substrate support portion; (ab) a step of generating plasma in a chamber to perform plasma processing on the first substrate; (ac) a step of supplying electric power to each of a plurality of heaters configured in the substrate support portion; (ad) a step of acquiring the electric power supplied to each of the plurality of heaters in a state where plasma is generated in the chamber; and (ae) a step of calculating first distribution data based on the electric power acquired for each of the plurality of heaters in the first electric power acquisition step.

[0033] In an exemplary embodiment, the method further includes: (ca) configuring a reference substrate on a substrate support; (cb) generating plasma in a chamber to perform plasma processing on the reference substrate; (cc) supplying electric power to each of a plurality of heaters configured in the substrate support; (cd) acquiring the electric power supplied to each of the plurality of heaters in a state where plasma is generated in the chamber; and (ce) calculating reference distribution data, the reference distribution data being data representing the distribution of ion flux generated between the reference substrate and the plasma, the reference distribution data being able to be calculated based on the electric power acquired for each of the plurality of heaters in the reference electric power acquisition step, and in the plasma processing step (bb), the plasma is generated based on the reference distribution data and the first distribution data.

[0034] In an exemplary embodiment, the plasma processing step (bb) includes a process of generating plasma in the chamber based on a difference between the reference profile data and the first profile data.

[0035] In an exemplary embodiment, the plasma processing apparatus further includes a storage unit storing a data table associating (1) a change in distribution of electron density of plasma generated in a chamber with (2) a change in distribution of ion flux generated between a substrate disposed on a substrate support and the plasma generated in the chamber, and the plasma processing step (bb) includes the following steps: controlling the distribution of electron density based on a difference between baseline distribution data and first distribution data, with reference to the data table stored in the storage unit.

[0036] In an exemplary embodiment, the plasma processing apparatus further comprises a plurality of electromagnets arranged opposite to the substrate support portion, and the step of controlling the distribution of electron density comprises the following step: controlling at least one of the current and the voltage supplied to the plurality of electromagnets to control the distribution of electron density.

[0037] In an exemplary embodiment, the substrate support portion has a substrate support surface for supporting the substrate, the substrate support surface includes a plurality of support regions, and the plurality of heaters are disposed on the substrate support portion in respective support regions of the plurality of support regions.

[0038] In an exemplary embodiment, the reference substrate, the first substrate, and the second substrate respectively include mask films having the same opening pattern.

[0039] In an exemplary embodiment, the plasma processing apparatus further includes a storage unit storing a data table associating (1) a change in distribution of a bias voltage generated between a substrate configured on a substrate support unit and a plasma generated in a chamber with (2) a change in distribution of an ion flux generated between a substrate configured on a substrate support unit and a plasma generated in a chamber, and the plasma processing step (bb) includes the following steps: controlling the distribution of the bias voltage based on a difference between the baseline distribution data and the first distribution data, with reference to the data table stored in the storage unit.

[0040] In an exemplary embodiment, the plasma processing apparatus further includes a ring assembly disposed around the substrate support portion, and the step of controlling the distribution of the bias voltage includes controlling a voltage applied to the ring assembly to control the distribution of the bias voltage.

[0041] In an exemplary embodiment, a plasma processing apparatus includes: a ring assembly disposed around a substrate support portion; and an actuator configured to adjust a height of the ring assembly relative to a height of the substrate support portion, wherein the step of controlling the distribution of a bias voltage includes adjusting the height of the ring assembly to control the distribution of the bias voltage.

[0042] In an exemplary embodiment, the step of generating a data table is further included, and the step of generating the data table includes: the step of configuring the simulated substrate on the substrate support portion; the step of controlling the electric power supplied to each of the plurality of heaters so that the temperature of each of the plurality of heaters becomes a specified temperature when the simulated substrate is configured on the substrate support portion; the step of configuring the simulated substrate on the substrate support portion; the step of generating plasma in a chamber to perform plasma treatment on the simulated substrate; the step of changing the distribution of the electron density of the plasma to obtain the electric power supplied to the plurality of heaters when plasma treatment is performed on a substrate including a mask film; and the step of storing in a data table (1) a change in the distribution of the electron density of the plasma generated in the chamber and (2) a change in the distribution of the ion flux generated between the substrate configured on the substrate support portion and the plasma generated in the chamber in association with each other.

[0043] In an exemplary embodiment, a plasma processing apparatus is provided, which includes a chamber, a substrate support portion disposed in the chamber, and a control portion. In the plasma processing apparatus, the control portion performs the following processing: (a) pre-saves first distribution data, the first distribution data being data on the distribution of ion flux generated between plasma generated in the chamber and a first substrate disposed on the substrate support portion, (ba) disposes a second substrate on the substrate support portion, and (bb) generates plasma in the chamber based on the first distribution data to perform plasma processing on the second substrate.

[0044] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the same reference numerals are used for the same or identical elements in the various figures, and repeated descriptions are omitted. Unless otherwise specifically denied, the positional relationships such as up, down, left, and right are described based on the positional relationships shown in the drawings. The dimensions of the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0045] Figure 1: is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0046] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-resonance plasma: Electron cyclotron resonance plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current: Alternating Current) plasma generating unit and a DC (Direct Current: Direct Current) plasma generating unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency: High Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0047] The control unit 2 is capable of processing computer-executable commands, which are used to cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 can be configured to control the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 is capable of reading a program from the storage unit 2a2 and performing various control operations by executing the read program. The program may be stored in the storage unit 2a2 in advance, or may be obtained via a medium when necessary. The obtained program is maintained in the storage unit 2a2, and is read out and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0048] Next, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0049] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a and the bottom wall 10b of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0050] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W, and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0051] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 described later may be arranged in the ceramic component 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. In the case where the bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0052] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0053] In addition, the substrate support portion 11 may include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas can flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a. Details of the temperature adjustment module are described in Figure 4 To be described later.

[0054] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas introduction unit may also include one or more side gas injection units (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0055] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the gas source 21 corresponding thereto to the shower head 13 via the flow controller 22 corresponding thereto. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0056] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and the ion components in the formed plasma can be attracted to the substrate W.

[0057] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generating source RF signal (generating source RF electric power) for plasma generation. In one embodiment, the generating source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of generating source RF signals having different frequencies. The generated one or more generating source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0058] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may be pulsed.

[0059] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0060] In various embodiments, the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform in the shape of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first DC generator 32a and the second DC generator 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0061] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0062] Figure 3 FIG. 1 is a diagram showing an example of the upper surface of the substrate support portion 11. Figure 3 As shown in FIG. 1 , the substrate support portion 11 includes a central region 111 a for supporting the substrate W and an annular region 111 b for supporting the ring assembly 112. The central region 111 a is as shown in FIG. Figure 3 As shown by the dotted lines in FIG. 1 , the temperature control module includes a plurality of partitions 111c. In this embodiment, the temperature control module can control the temperature of the substrate W or the substrate support 11 by the partition 111c. The number of partitions 111c and the area and shape of each partition 111c can be appropriately set according to the conditions required for the temperature control of the substrate W.

[0063] Figure 4 1 is a diagram showing an example of a cross section of the substrate supporting portion 11 . Figure 4 express Figure 3 A portion of the cross section of the substrate support portion 11 at AA'. Figure 4 As shown in FIG. 1 , the substrate support portion 11 includes an electrostatic chuck 1111, a base 1110, and a control substrate 80. The electrostatic chuck 1111 includes a plurality of heaters 200 and a plurality of resistors 201 therein. Figure 2 In each of the partitions 111c shown, a heater 200 and a resistor 201 are arranged inside the electrostatic chuck 1111. In each of the partitions 111c, the resistor 201 is arranged near the heater 200. In one example, the resistor 201 can be arranged between the heater 200 and the base 1110, closer to the heater 200 than the base 1110. The resistor 201 is configured so that its resistance value can change with temperature. In one example, the resistor 201 can also be a thermistor.

[0064] The base 1110 has one or more through holes 90 extending from the upper surface (the surface opposite to the electrostatic suction cup 1111) of the base 1110 to the lower surface (the surface opposite to the control substrate 80). The plurality of heaters 200 and the plurality of resistors 201 can be electrically connected to the control substrate 80 via the through holes 90. In the present embodiment, a connector 91 is embedded at one end of the upper surface side of the through hole 90, and a connector 92 is embedded at one end of the lower surface side of the through hole 90. The plurality of heaters 200 and the plurality of resistors 201 are electrically connected to the connector 91. The plurality of heaters 200 and the plurality of resistors 201 can be connected to the connector 91, for example, via wiring arranged inside the electrostatic suction cup 1111. The connector 92 is electrically connected to the control substrate 80. In addition, a plurality of wirings 93 for electrically connecting the connector 91 to the connector 92 are arranged in the through holes 90. Thus, the plurality of heaters 200 and the plurality of resistors 201 can be electrically connected to the control substrate 80 via the through-holes 90. In addition, the connector 92 can function as a supporting member for fixing the control substrate 80 to the base 1110.

[0065] The control substrate 80 is a substrate on which elements for controlling the plurality of heaters 200 and / or the plurality of resistors 201 are arranged. The control substrate 80 can be arranged parallel to the lower surface of the base 1110, opposite to the lower surface. The control substrate 80 can be arranged surrounded by a conductive member. The control substrate 80 can be supported on the base 1110 by a supporting member other than the connector 92.

[0066] The control substrate 80 can be electrically connected to the power supply unit 70 via the wiring 73. That is, the power supply unit 70 can be electrically connected to the plurality of heaters 200 via the control substrate 80. The power supply unit 70 generates power to be supplied to the plurality of heaters 200. Thus, the power supplied from the power supply unit 70 to the control substrate 80 can be supplied to the plurality of heaters 200 via the connector 92, the wiring 93, and the connector 91. In addition, an RF filter for reducing RF may be disposed between the power supply unit 70 and the control substrate 80. The RF filter may be provided outside the plasma processing chamber 10.

[0067] The control substrate 80 can be connected to the control unit 2 via the wiring 75 so as to be communicable. The wiring 75 may be an optical fiber. In this case, the control substrate 80 communicates with the control unit 2 by optical communication. The wiring 75 may also be a metal wiring.

[0068] Figure 51 is a block diagram showing an example of the structure of the control substrate 80. The control substrate 80 is provided with a control unit 81, a plurality of supply units 82 as an example of an element, and a plurality of measurement units 83. The plurality of supply units 82 and the plurality of measurement units 83 are provided corresponding to the plurality of heaters 200 and the plurality of resistors 201, respectively. One supply unit 82 and one measurement unit 83 may be provided for one heater 200 and one resistor 201.

[0069] Each measuring unit 83 generates a voltage based on the resistance value of each resistor 201 provided corresponding to each measuring unit 83 and supplies it to the control unit 81. The measuring unit 83 may be configured to convert the voltage generated based on the resistance value of the resistor 201 into a digital signal and output it to the control unit 81.

[0070] The control unit 81 controls the temperature of the substrate W in each partition 111c. The control unit 81 controls the supply of electric power to the plurality of heaters 200 based on the set temperature received from the control unit 2 and the voltage indicated by the digital signal received from the measuring unit 83. As an example, the control unit 81 calculates the temperature of the resistor 201 (hereinafter also referred to as "measured temperature") based on the voltage indicated by the digital signal received from the measuring unit 83. Furthermore, the control unit 81 controls each supply unit 82 based on the set temperature and the measured temperature. Each supply unit 82 switches whether to supply the electric power supplied from the electric power supply unit 70 to each heater 200 based on the control of the control unit 81. In addition, each supply unit 82 can also increase or decrease the electric power supplied from the electric power supply unit 70 based on the control of the control unit 81 and supply it to each heater 200. Thus, the substrate W, the electrostatic chuck 1111 and / or the susceptor 1110 can be brought to a predetermined temperature.

[0071] <An example of plasma treatment method>

[0072] Figure 6 FIG. 1 is a flow chart showing a plasma processing method according to an exemplary embodiment (hereinafter also referred to as “the present processing method”). Figure 6 As shown, the processing method includes the step of generating a data table (ST1), the step of performing plasma processing on a reference substrate to obtain reference distribution data (ST2), the step of performing plasma processing on a first processing substrate (ST3), and the step of performing plasma processing on a second processing substrate (ST4). The processing in each step can be performed in Figure 1 Hereinafter, as an example, the control unit 2 controls each unit of the plasma processing apparatus 1 to execute the present processing method.

[0073] (Step ST1: Generate data table)

[0074] Figure 7is a flowchart showing an example of step ST1. The data table generated in step ST1 may be a data table that stores the change amount of one or more parameters related to plasma generation in association with the change amount of the distribution of ion flux generated according to the change amount. The ion flux is the ion flux generated between the substrate W disposed on the substrate support part 11 and the plasma generated in the plasma processing chamber 10. In addition, the ion flux may include the ion flux generated between the ring assembly 112 and the plasma generated in the plasma processing chamber 10.

[0075] In one example, the parameter may be a parameter capable of changing the distribution of the electron density generated in the plasma processing chamber 10, such as the magnetic flux density of the magnetic field applied to the plasma processing chamber 10. As an example, the plasma processing apparatus 1 may include a plurality of electromagnets configured to apply a magnetic field to the plasma processing chamber 10 (see Fig.16 ), in which case the parameter may be, for example, the current and / or voltage supplied to the plurality of electromagnets.

[0076] In one example, the parameter may be a parameter that can change the distribution of the bias voltage generated between the substrate W disposed on the substrate support portion 11 and the plasma generated in the plasma processing chamber 10. As an example, the electrostatic chuck 1111 may have an electrode configured to apply a voltage to the ring assembly 112. In this case, the parameter may be the voltage applied to the ring assembly 112.

[0077] In addition, the parameter may be a parameter related to the hardware structure of the plasma processing apparatus 1. As an example, the parameter may be the height of the ring assembly 112. The height of the ring assembly 112 may be the height of the surface of the ring assembly 112 relative to the substrate supporting surface of the substrate supporting portion 11 or the height of the substrate W.

[0078] like Figure 7 As shown, step ST1 includes the steps of configuring the dummy substrate (ST11), setting the temperature of the dummy substrate (ST12), setting the parameters of the plasma processing (ST13), generating plasma (ST14), acquiring the supplied electric power of each heater (ST15), confirming the acquisition of the supplied electric power (ST16), and generating a data table (ST17). In one example, step ST1 can be executed at the timing of performing a prescribed operation instructing the start of generating the data table in the plasma processing apparatus 1.

[0079] First, in step ST11, the simulation substrate is arranged on the substrate support part 11. In one example, the simulation substrate can be a substrate without a film formed thereon. The simulation substrate can be, for example, a silicon wafer. Next, in step ST12, the temperature of the simulation substrate is set. In one example, the control unit 2 controls the control unit 81 arranged on the control substrate 80 so that the temperature of the simulation substrate in each partition 111c becomes a set temperature. In addition, the control unit 2 obtains the electric power supplied to each heater 200 and stores it in the storage unit 2a when the temperature of the simulation substrate is stabilized at the set temperature. In addition, the temperature of the simulation substrate can also be stabilized at the set temperature when a specified time has passed since the simulation substrate was arranged on the substrate support part 11.

[0080] In addition, when the dummy substrate is not arranged on the substrate support part 11 and the temperature of the electrostatic chuck 1111 is stabilized at a set temperature, the electric power supplied to each heater 200 can be obtained and stored in the storage part 2a.

[0081] After the temperature of the dummy substrate is stabilized at the set temperature, in step ST13, parameters for plasma treatment of the dummy substrate are set. The parameters may be the same as the parameters for plasma treatment performed on the reference substrate, the first processed substrate, and the second processed substrate in steps ST2 to ST4 described later. The plasma treatment may include plasma etching for forming semiconductor elements on the reference substrate, the first processed substrate, and the second processed substrate.

[0082] The parameters of the plasma processing may include the type of processing gas, the flow rate of the processing gas, the frequency, power and duty cycle of the generated source RF signal, the frequency, power / voltage and duty cycle of the bias signal, the pressure in the plasma processing chamber 10, the voltage applied to the ring assembly 112, the height of the ring assembly 112, and the distribution of the magnetic field applied to the plasma processing chamber 10. Then, in step ST14, plasma is generated and the plasma processing is performed on the dummy substrate.

[0083] Next, in step ST15, the electric power supplied to the plurality of heaters 200 is acquired. In step ST14 and step ST15, the control unit 2 can control the electric power supplied to each heater 200 so that the temperature of the dummy substrate in each partition 111c becomes the set temperature. Moreover, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200 in a state where plasma is generated in the plasma processing chamber 10. The control unit 2 can store the electric power supplied to the plurality of heaters 200 acquired in step ST15 in the storage unit 2a in association with one or more parameters of plasma processing. In the present embodiment, the parameter can be a parameter that can change the distribution of the electron density generated in the plasma processing chamber 10.

[0084] Next, in step ST16, it is determined whether the supplied electric power supplied to the plurality of heaters 200 is obtained under all conditions under which the parameters are changed. If it is determined that the supplied electric power is not obtained under all conditions (step ST16: No), the process returns to step ST13, and the control unit 2 changes one or more parameters to generate plasma (step ST14). The parameter may be a parameter that changes the distribution of the electron density generated in the plasma processing chamber 10. In one example, the parameter may be the magnetic flux density of the magnetic field applied to the plasma processing chamber 10. In addition, the parameter may be the voltage applied to the ring assembly 112 or the height of the ring assembly 112. Then, in a state where plasma is generated according to the newly set parameters in step ST13, the electric power supplied to each of the plurality of heaters 200 is re-obtained (step ST15). The control unit 2 can store the supplied electric power supplied to the plurality of heaters 200 obtained in step ST15 in the storage unit 2a in association with one or more parameters.

[0085] In addition, when it is determined that the electric power supplied to the multiple heaters 200 is obtained under all conditions in which the parameters are changed (step ST16: Yes), the control unit 2 stops the plasma processing. Then, in step ST17, the control unit 2 generates a data table based on the values ​​of the parameters stored in the storage unit 2a and the electric power supplied to the multiple heaters 200. The data table can be a data table that associates the change in the parameters in the plasma processing performed in step ST14 with the change in the distribution of the ion flux generated according to the change. In addition, the distribution of the ion flux can be calculated based on the heat flux generated between the simulated substrate configured on the substrate support part 11 and the plasma generated in the plasma processing chamber 10. For example, when the temperature of the simulated substrate configured on the substrate support part 11 is constant, the ion flux Γ generated between the simulated substrate and the plasma generated in the plasma processing chamber 10 i (m -2 s-1 ) in relation to the heat flux Γ heat (W / m 2 ) can have the following relationship, where the heat flux Γ heat (W / m 2 ) is the heat flux generated between the simulated substrate and the plasma generated in the plasma processing chamber 10.

[0086] Γ i ×Vdc∝Γ heat Formula (1)

[0087] Here, Vdc (V) is a bias voltage (V) generated between the dummy substrate and the plasma. In addition, the heat flux Γ generated between the dummy substrate disposed on the substrate support 11 and the plasma generated in the plasma processing chamber 10 is heat , can be calculated based on the supplied electric power obtained in step ST15. In one example, the heat flux Γ in each partition 111c heat It can be calculated based on the following formula.

[0088] Γ heat =(P 0 -P htr ) / A Formula (2)

[0089] Here, P 0 P is the electric power (W) supplied to the heater 200 of the partition 111c when no plasma is generated. 0 is the electric power supplied to the heater 200 of the partition 111c acquired in step ST12. htr P is the electric power (W) supplied to the heater 200 of the partition 111c when plasma is generated. htr is the electric power supplied to the heater 200 of the partition 111c acquired in step ST15. As an example, P htr It can be the electric power (W) supplied to the heater 200 of the partition 111c when the electric power (W) becomes substantially constant after the plasma is generated. In addition, A is the area (m 2 ).

[0090] In addition, in the data table generated in step ST17, the parameter stored in association with the change in ion flux may be the change in magnetic flux density of the magnetic field applied to the plasma, or the change in current and / or voltage supplied to the electromagnet generating the magnetic field. Here, when the temperature of the simulated substrate is constant, the ion flux Γ generated between the simulated substrate and the plasma is i The electron density in the plasma can have a relationship based on the following equation.

[0091] Γ i ∝n e ×(Vdc) 1 / 2 Formula (3)

[0092] Here, n e is the electron density in the plasma (m -3 ). In addition, Vdc is a bias voltage (V) generated between the dummy substrate and the plasma. In addition, the electron density in the plasma and the magnetic flux density of the magnetic field applied to the plasma have a relationship based on the following formula.

[0093] n e ∝H formula (4)

[0094] Here, H is the magnetic flux density (G). Thus, the distribution of the magnetic flux density applied to the plasma can be changed, and the distribution of the ion flux generated between the plasma and the dummy substrate can be changed. Thus, in step ST17, as an example, the control unit 2 can generate a data table that associates the amount of change in the distribution of the magnetic flux density of the magnetic field applied to the plasma with the amount of change in the distribution of the ion flux.

[0095] In addition, in the data table generated in step ST17, the parameter stored in association with the change in ion flux may be a parameter that can change the distribution of the bias voltage generated between the substrate W disposed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. Here, when the temperature of the simulated substrate is constant, the ion flux Γ generated between the simulated substrate and the plasma is i With respect to the bias voltage (V) generated between the simulated substrate and / or the ring assembly 112 and the plasma, the relationship of the above formula (3) can be achieved. As a result, the distribution of the bias voltage Vdc can be changed, so that the distribution of the ion flux generated between the plasma and the simulated substrate can be changed. In this way, in step ST17, as an example, the control unit 2 can generate a data table that associates the change in the distribution of the bias voltage with the change in the distribution of the ion flux. In addition, in step ST17, as an example, the control unit 2 can generate a data table that associates the change in the voltage applied to the ring assembly 112 with the change in the distribution of the ion flux. In addition, in step ST17, as an example, the control unit 2 can generate a data table that associates the change in the height of the ring assembly 112 with the change in the distribution of the ion flux.

[0096] (Step ST2: Plasma Treatment of Reference Substrate)

[0097] Figure 8: is a flowchart showing an example of step ST2. In step ST2, a reference substrate is subjected to plasma treatment to obtain reference distribution data. The reference substrate may be a substrate for forming a semiconductor element. In addition, the plasma treatment may include a plasma etching treatment for forming a semiconductor element on the reference substrate. That is, the reference substrate may include a prescribed film and a mask film arranged on the prescribed film. The mask film may have a prescribed opening pattern. The reference substrate may be the same substrate as the first processing substrate and / or the second processing substrate described later. That is, the reference substrate may include a mask film having the same film and the same opening pattern as the first processing substrate and / or the second processing substrate. In addition, in step ST2, instead of the reference substrate, a simulation substrate may be subjected to plasma treatment to calculate the reference distribution data.

[0098] like Figure 8 As shown, step ST2 includes a step of configuring a reference substrate (step ST21), a step of setting the temperature of the reference substrate (step ST22), a step of generating plasma (step ST23), a step of acquiring the supplied electric power of each heater (step ST24), and a step of calculating reference distribution data (step ST25). In one example, step ST2 can be performed after the plasma processing device 1 is set up or maintained. That is, step ST2 can be performed when the plasma processing device 1 is in a good state.

[0099] First, in step ST21, the reference substrate is arranged on the substrate support part 11. Then, in step ST22, the temperature of the reference substrate is set. In one example, the control unit 2 controls the control unit 81 arranged on the control substrate 80 so that the temperature of the reference substrate in each partition 111c becomes the set temperature. In addition, the control unit 2 obtains the electric power supplied to each heater 200 when the temperature of the reference substrate is stabilized at the set temperature, and stores it in the storage unit 2a. In addition, the time after a predetermined time has passed since the reference substrate was arranged on the substrate support part 11 can be regarded as the state in which the temperature of the reference substrate is stabilized at the set temperature. In addition, the electric power supplied to each heater 200 can be obtained and stored in the storage unit 2a when the temperature of the electrostatic chuck 1111 is stabilized at the set temperature without the reference substrate being arranged on the substrate support part 11.

[0100] After the temperature of the reference substrate is stabilized at the set temperature, in step ST23, plasma is generated in the plasma processing chamber 10 to perform plasma processing on the reference substrate. The parameters used for plasma processing on the reference substrate in step ST23 may be the same as the parameters set in step ST13.

[0101] Next, in step ST24, the electric power supplied to the plurality of heaters 200 is acquired. In step ST23 and step ST24, the control unit 2 controls the electric power supplied to each heater 200 so that the temperature of the reference substrate in each partition 111c becomes the set temperature. Then, in a state where plasma is generated in step ST24, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200. The control unit 2 can store the electric power supplied to the plurality of heaters 200 acquired in step ST24 in association with one or more parameters in the storage unit 2a.

[0102] Next, in step ST25, reference distribution data is calculated. The reference distribution data may be distribution data of ion flux generated between the plasma generated in the plasma processing chamber 10 and the reference substrate. The distribution data of the ion flux may be calculated based on equations (1) and (2) described in step ST17.

[0103] Fig. 9 1 is a diagram showing an example of reference distribution data. Reference distribution data can be obtained when the plasma processing device 1 is in a normal state, such as after the plasma processing device 1 is set up or maintained. Therefore, the reference distribution data can be used as reference distribution data about the ion flux generated between the plasma and the substrate. In addition, multiple reference distribution data can be obtained from multiple reference substrates, and the reference distribution data can be calculated based on the multiple reference distribution data. Fig. 9 As an example, Fig. 9 Calculated distribution data for a substrate having a diameter of 300 mm are shown.

[0104] (Step ST3: Plasma Treatment of First Processing Substrate)

[0105] Fig.10 is a flow chart showing an example of step ST3. In step ST3, a first processing substrate is subjected to plasma treatment. The first processing substrate may be a substrate for forming a semiconductor element. In addition, the plasma treatment may include a plasma etching process for forming a semiconductor element on the first processing substrate. The first processing substrate may be a substrate having the same structure as the reference substrate. That is, the first processing substrate may include a mask film having the same film and the same opening pattern as the reference substrate. In addition, the parameters for plasma treatment of the first processing substrate may be the same as the parameters for plasma treatment of the reference substrate. In addition, the first processing substrate is an example of the first substrate. In addition, in step ST3, a simulation substrate may be subjected to plasma treatment instead of the first processing substrate to calculate the first distribution data.

[0106] like Fig.10As shown, step ST3 includes the steps of configuring the first processing substrate (step ST31), setting the temperature of the first processing substrate (step ST32), generating plasma (step ST33), acquiring the supplied electric power of each heater (step ST34), calculating the first distribution data (step ST35), and calculating the correction value (step ST36). In one example, after executing step ST2, step ST3 can be executed after a predetermined period of time to correct the time-dependent change of the plasma processing device 1.

[0107] First, in step ST31, the first processing substrate is arranged on the substrate support part 11. Then, in step ST32, the temperature of the first processing substrate is set. In one example, the control unit 2 controls the control unit 81 arranged on the control substrate 80 so that the temperature of the first processing substrate in each partition 111c becomes the set temperature. In addition, the control unit 2 obtains the electric power supplied to each heater 200 when the temperature of the first processing substrate is stabilized at the set temperature, and stores it in the storage unit 2a. In addition, the time after a predetermined time has passed since the first processing substrate was arranged on the substrate support part 11 can be regarded as the state in which the temperature of the first processing substrate is stabilized at the set temperature. In addition, it is also possible to obtain the electric power supplied to each heater 200 and store it in the storage unit 2a without arranging the first processing substrate on the substrate support part 11, while the temperature of the electrostatic chuck 1111 is stabilized at the set temperature.

[0108] After the temperature of the first processing substrate is stabilized at the set temperature, in step ST33, plasma is generated in the plasma processing chamber 10 to perform plasma processing on the first processing substrate. The parameters used for performing plasma processing on the first processing substrate in step ST33 may be the same conditions as the parameters set in step ST13 and step ST23.

[0109] Next, in step ST34, the electric power supplied to the plurality of heaters 200 is acquired. In step ST33 and step ST34, the control unit 2 controls the electric power supplied to each heater 200 so that the temperature of the first processing substrate in each partition 111c becomes the set temperature. Then, in a state where plasma is generated in step ST34, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200. The control unit 2 can associate the electric power supplied to the plurality of heaters 200 acquired in step ST34 with one or more parameters and store them in the storage unit 2a.

[0110] Next, in step ST35, first distribution data is calculated. The first distribution data may be distribution data of ion flux generated between the plasma generated in the plasma processing chamber 10 and the first processing substrate. The distribution data of the ion flux may be calculated based on equations (1) and (2) described in step ST17.

[0111] Fig.11 is a diagram showing an example of the first distribution data. As an example, Fig.11 The first distribution data shown is obtained after a predetermined period of time has passed after the plasma processing device 1 is installed or maintained. Therefore, although the first distribution data is obtained according to the same plasma processing parameters as the reference distribution data, it can be data reflecting the time-dependent changes of consumable parts and the like included in the plasma processing device 1. Fig.11 In the example shown, in the central area and the lower area of ​​the figure, the ion flux becomes higher than in other areas. Therefore, in the second processing substrate that performs plasma processing after the first processing substrate, a correction value is calculated based on the reference distribution data and the first distribution data in step ST36 to correct the distribution of the ion flux. The correction value may be the difference between the reference distribution data and the first distribution data. In addition, as an example, Fig.11 Calculated distribution data for a substrate having a diameter of 300 mm are shown.

[0112] (Step ST4: Plasma Treatment of Second Processing Substrate)

[0113] Fig.12 is a flow chart showing an example of step ST4. In step ST4, the second processed substrate is subjected to plasma treatment. In step ST4, the second processed substrate can be subjected to plasma treatment using the correction value obtained for the first processed substrate in step ST36. In one example, the first processed substrate can be the first processed substrate in a particular batch. In addition, the second processed substrate can be a substrate processed after the first processed substrate in the particular batch.

[0114] The second processing substrate can be a substrate for forming a semiconductor element. In addition, the plasma treatment can include a plasma etching process for forming a semiconductor element on the second processing substrate. The second processing substrate can be a substrate with the same structure as the reference substrate and / or the first processing substrate. That is, the second processing substrate can include a mask film with the same film and the same opening pattern as the reference substrate and / or the first processing substrate. In addition, the parameters for plasma treatment of the second processing substrate can be the same as the parameters for plasma treatment of the reference substrate and / or the first processing substrate. In addition, the second processing substrate is an example of the second substrate. In addition, in step ST4, the second processing substrate can also be replaced, and the simulation substrate can be plasma treated to calculate the second distribution data.

[0115] like Fig.12 As shown, step ST4 includes the step of configuring a second processing substrate (step ST41), the step of setting the temperature of the second processing substrate (step ST42), the step of generating plasma based on a correction value (step ST43), the step of acquiring the supplied electric power of each heater (step ST44), the step of calculating the second distribution data (step ST45) and the step of calculating the correction value (step ST46).

[0116] First, in step ST41, the second processing substrate is arranged on the substrate support part 11. Then, in step ST42, the temperature of the second processing substrate is set. In one example, the control unit 2 controls the control unit 81 arranged on the control substrate 80 so that the temperature of the second processing substrate in each partition 111c becomes the set temperature. In addition, the control unit 2 obtains the electric power supplied to each heater 200 when the temperature of the second processing substrate is stabilized at the set temperature, and stores it in the storage unit 2a2. In addition, the time after a predetermined time has passed since the second processing substrate was arranged on the substrate support part 11 can be regarded as the state in which the temperature of the second processing substrate is stabilized at the set temperature. In addition, it is also possible to obtain the electric power supplied to each heater 200 and store it in the storage unit 2a without arranging the second processing substrate on the substrate support part 11, and in the state in which the temperature of the electrostatic chuck 1111 is stabilized at the set temperature.

[0117] After the temperature of the second processing substrate is stabilized at the set temperature, in step ST43, plasma is generated in the plasma processing chamber 10 to perform plasma processing on the second processing substrate. A part of the parameters for performing plasma processing on the second processing substrate in step ST43 can be set based on the correction value calculated based on the reference distribution data in step ST35. That is, in step ST43, plasma can be generated in the plasma processing chamber 10 based on the correction value calculated based on the reference distribution data in step ST35. As an example, when the correction value is the difference between the reference distribution data and the first distribution data (the difference in the distribution of ion flux), the control unit 2 refers to the change in the distribution of ion flux corresponding to the correction value in the data table stored in the storage unit 2a in step ST1. Then, the control unit 2 sets the parameter for correcting the distribution of ion flux based on the change in the parameter corresponding to the change in the distribution of ion flux contained in the data table.

[0118] In one example, the parameter may be the magnetic flux density of the magnetic field applied to the plasma or the current and / or voltage supplied to the electromagnet generating the magnetic field. In addition, the parameter may be the voltage applied to the ring assembly.

[0119] In addition, the process of generating plasma in the plasma processing chamber 10 based on the reference distribution data may include the process of generating plasma after adjusting the hardware structure based on the correction value calculated in step ST36 and / or step ST46. As an example, the process of adjusting the hardware structure may be a process of adjusting the height of the ring assembly 112. The height of the ring assembly 112 may be the height of the surface of the ring assembly 112 relative to the height of the substrate supporting surface of the substrate supporting portion 11. In addition, the adjustment of the hardware structure may be performed before step ST43. That is, the plasma may be generated in step ST43 after the adjustment of the hardware structure is performed before step ST43. The generation of the plasma may also be included in the process of generating plasma in the plasma processing chamber 10 based on the reference distribution data. Here, with reference to Figures 13 and 14, an example of adjusting the parameters related to the ring assembly 112 to correct the distribution of the ion flux is described.

[0120] Fig.13A Schematically shows the ion flux generated between the substrate W and the ring assembly 112 and the plasma when the plasma processing apparatus 1 is in a good state (for example, when the reference distribution data is acquired in step ST2). Fig. 13B is the ion flux Γ when the plasma processing apparatus 1 is in a good state (for example, when the reference distribution data is acquired in step ST2). i A graph of an example of the distribution of . Fig.14ASchematically shows the ion flux generated between the substrate W and the ring assembly 112 and the plasma when the plasma processing apparatus 1 is used for a certain period of time (for example, when the first distribution data is acquired in step ST3). Fig. 14B is the ion flux Γ when the plasma processing device 1 is used for a certain period of time (for example, when the first distribution data is acquired in step ST3). i An example of the distribution of . Fig.13A and Fig.14A In , Pb represents the lower end of plasma (the upper end of plasma sheath). In addition, d represents the thickness of plasma sheath.

[0121] like Fig.13A As shown, when the plasma processing device 1 is in a good state, the thickness d of the plasma sheath can be from the substrate W to the ring assembly 112 (ie, Fig.13A In the horizontal direction of Fig. 13B As shown, the ion flux Γ i The distribution of Γ can also be approximately constant from the substrate W to the ring assembly 112. i The incident angle relative to the substrate W and the ring assembly 112 may also be substantially perpendicular relative to the substrate W and the ring assembly 112 .

[0122] On the other hand, when the plasma processing apparatus 1 is used for a certain period of time from a good state, due to the influence of wear of the ring assembly 112, the ring assembly 112 may be damaged. Fig.14A As shown, the thickness d of the plasma sheath on the ring assembly 112 may become different from the thickness d of the plasma sheath on the substrate W. As a result, the ion flux Γ may be near the boundary between the substrate W and the ring assembly 112. i The incident angle relative to the substrate W and / or the ring assembly 112 changes, and the shape of the plasma sheath changes. In this way, when a difference between the reference distribution data and the first distribution data (difference in the distribution of the ion flux) appears along the periphery of the substrate W, the control unit 2 may also adjust the parameters of the ring assembly 112 to generate plasma in step ST43. As an example, the plasma processing apparatus 1 may be configured to apply a voltage to the ring assembly 112, and the control unit 2 may adjust the voltage applied to the ring assembly 112 to correct the ion flux Γ. i In addition, the plasma processing device 1 may include an actuator configured to adjust the height of the ring assembly 112, and the control unit 2 may also control the actuator to adjust the height of the ring assembly 112, which affects the ion flux Γ i In addition, the adjustment of the parameters of the ring component 112 may be performed before step ST43.

[0123] Next, in step ST44, the electric power supplied to the plurality of heaters 200 is acquired. In step ST43 and step ST44, the control unit 2 controls the electric power supplied to each heater 200 so that the temperature of the second processing substrate in each partition 111c becomes the set temperature. Then, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200 in a state where plasma is generated. The control unit 2 can store the electric power supplied to the plurality of heaters 200 acquired in step ST44 in association with one or more parameters in the storage unit 2a.

[0124] Next, in step ST45, the second distribution data is calculated. The first distribution data may be distribution data of ion flux generated between the plasma generated in the plasma processing chamber 10 and the second processing substrate. The distribution data of the ion flux may be calculated based on equations (1) and (2) described in step ST17.

[0125] Next, in step ST46, a correction value is calculated based on the reference distribution data and the second distribution data. The correction value may be a difference between the reference distribution data and the second distribution data. The correction value may be used as a correction value for the distribution of ion flux in a plasma process performed after the second processing substrate in a batch including the first processing substrate and the second processing substrate.

[0126] In addition, in step ST36 and step ST46, the correction value is calculated based on the reference distribution data, but the calculation method of the correction value is not limited to this. In one example, the data obtained in the plasma processing in step ST3 and step ST4 can also be stored, and the parameters in the plasma processing are corrected based on the stored data, and the distribution of the ion flux is corrected. The stored data may include the parameters of the plasma processing, the power supplied to the heater, the temperature of the heater, the distribution of the heat flux, the distribution of the ion flux, the type and structure of the substrate, etc.

[0127] In addition, the present processing method may include an in-plane correction step of correcting the in-plane distribution of the ion flux in addition to or instead of the steps described in steps ST1 to ST4 . Fig.15 1 is a flowchart showing an example of the in-plane correction step. The in-plane correction step includes a step of calculating the ion flux in each partition 111c (ST51), a step of calculating the difference in ion flux between a plurality of adjacent partitions 111c (ST52), a step of calculating the incident angle of the ion flux in each partition 111c (ST53), and a step of correcting the distribution of the ion flux based on the calculated incident angle.

[0128] First, in step ST51, the ion flux of each partition 111c is calculated. The ion flux can be calculated using the method described in steps ST1 to ST4. Next, in step ST52, the difference in ion flux between multiple adjacent partitions is calculated, and then in step ST53, the incident angle of the ion flux in each partition 111c is calculated. In step ST53, the incident angle of the ion flux can be calculated based on the difference in ion flux between multiple partitions 111c calculated in step ST52 and the distance between multiple partitions 111c. The distance between multiple partitions 111c can be the distance between the resistors 201 of each partition 111c configured in the multiple partitions 111c. Next, in step ST54, based on the distribution of the calculated incident angles of the ion flux, the distribution of the ion flux between the multiple partitions 111c is corrected. In step ST54, the distribution of the ion flux between the plurality of partitions 111 c may be corrected based on the distribution of the incident angles of the ion flux calculated in step ST53, similarly to the method described in steps ST1 to ST4. In addition, in step ST54, the ion flux of each partition 111 c may be corrected so that the distribution of the ion flux within the surface of the substrate W and / or the ring assembly 112 is close to uniform.

[0129] <Other embodiments of plasma processing apparatus 1>

[0130] Fig.16 It is a diagram for illustrating other structural examples of a plasma processing apparatus. In one embodiment, the plasma processing apparatus 1 may have an electromagnet assembly 3 including one or more electromagnets 45. The electromagnet assembly 3 is configured to generate a magnetic field in the chamber 10. In one embodiment, the plasma processing apparatus 1 has an electromagnet assembly 3 including a plurality of electromagnets 45. In the embodiment shown in FIG. 14 , the plurality of electromagnets 45 include electromagnets 46 to 49. The plurality of electromagnets 45 are disposed on or above the chamber 10. That is, the electromagnet assembly 3 is configured on or above the chamber 10. In the example shown in FIG. 14 , the plurality of electromagnets 45 are disposed above the shower head 13.

[0131] Each of the at least one electromagnet 45 includes a coil. In the example shown in FIG. 14 , the electromagnets 46 to 49 include coils 61 to 64. The coils 61 to 64 are wound around the central axis Z. The central axis Z may be an axis passing through the center of the substrate W or the substrate support 11. That is, in the electromagnet assembly 3, the coils 61 to 61 may be an annular coil. The coils 61 to 64 are coaxially arranged at the same height position with the central axis Z as the center.

[0132] The electromagnet assembly 3 also includes a bobbin 50 (or a yoke). Coils 61 to 64 are wound around the bobbin 50 (or a yoke). The bobbin 50 is formed, for example, of a magnetic material. The bobbin 50 has a columnar portion 51, a plurality of cylindrical portions 52 to 55, and a base portion 56. The base portion 56 has a substantially disc shape, and its central axis coincides with the central axis Z. The columnar portion 51 and the plurality of cylindrical portions 52 to 55 extend downward from the lower surface of the base portion 56. The columnar portion 51 has a substantially cylindrical shape, and its central axis coincides with the central axis Z. The radius of the columnar portion 51 is, for example, 30 mm. The cylindrical portions 52 to 55 extend radially outside the columnar portion 51 relative to the central axis Z.

[0133] The coil 61 is wound along the outer circumference of the columnar portion 51 and is housed in the groove between the columnar portion 51 and the cylindrical portion 52. The coil 62 is wound along the outer circumference of the cylindrical portion 52 and is housed in the groove between the cylindrical portion 52 and the cylindrical portion 53. The coil 63 is wound along the outer circumference of the cylindrical portion 53 and is housed in the groove between the cylindrical portion 53 and the cylindrical portion 54. The coil 64 is wound along the outer circumference of the cylindrical portion 54 and is housed in the groove between the cylindrical portion 54 and the cylindrical portion 55.

[0134] Each coil included in the one or more electromagnets 45 is connected to the current source 65. Supply and stop of current from the current source 65 to each coil included in the one or more electromagnets 45, the direction of the current, and the current value are controlled by the control unit 2. In addition, when the plasma processing apparatus 1 is provided with a plurality of electromagnets 45, each coil of the plurality of electromagnets 45 may be connected to one current source, or may be individually connected to different current sources.

[0135] The one or more electromagnets 45 form a magnetic field in the chamber 10 that is symmetrical about the central axis Z. By controlling the current supplied to each of the one or more electromagnets 45, the intensity distribution (or magnetic flux density) of the magnetic field can be adjusted in the radial direction relative to the central axis Z. Thus, the plasma processing apparatus 1 adjusts the radial distribution of the density of the plasma generated in the chamber 10. Fig.16 Other structures, operations and / or functions of the plasma processing device 1 shown may be different from those of Figure 2 The plasma processing apparatus 1 described in the illustrated example is the same.

[0136] According to the illustrated embodiment of the present invention, the uneven distribution of ion flux can be reduced, thereby generating highly uniform plasma in plasma processing, and further reducing the uneven distribution of etching rate in a plane in plasma etching, for example.

[0137] According to the illustrated embodiment of the present invention, even if the distribution of the ion flux generated between the plasma generated during the plasma treatment and the substrate changes, the time-dependent change can be easily corrected by correcting the parameters of the plasma treatment. The change in the distribution of the ion flux may be caused by the wear of components of the plasma treatment apparatus 1 due to the time-dependent change. The components may include ring components such as a focusing ring.

[0138] According to the illustrated embodiment of the present invention, as an example, the distribution of the ion flux may be corrected for each substrate, thereby suppressing the unevenness of the plasma treatment between substrates.

[0139] The embodiments of the present invention also include the following aspects.

[0140] (Note 1)

[0141] A plasma processing method, in which, in a plasma processing apparatus having a chamber and a substrate support portion disposed in the chamber, plasma is generated in the chamber to perform plasma processing on a substrate,

[0142] The plasma treatment method comprises:

[0143] (a) pre-storing first distribution data, the first distribution data being data on distribution of ion flux generated between the plasma generated in the chamber and the first substrate disposed on the substrate support;

[0144] (ba) a step of disposing a second substrate on the substrate support portion; and

[0145] (bb) a plasma processing step of generating plasma in the chamber based on the first distribution data to perform plasma processing on the second substrate.

[0146] (Note 2)

[0147] The plasma processing method according to Supplementary Note 1, wherein:

[0148] The steps of saving in (a) above include:

[0149] (aa) a step of disposing the first substrate on the substrate support portion;

[0150] (ab) generating plasma in the chamber to perform the plasma treatment on the first substrate;

[0151] (ac) supplying electric power to each of the plurality of heaters disposed in the substrate support portion;

[0152] (ad) a step of obtaining electric power supplied to each of the plurality of heaters in a state where plasma is generated in the chamber; and

[0153] (ae) A step of calculating the first distribution data based on the electric power acquired for each of the plurality of heaters in the first electric power acquisition step.

[0154] (Note 3)

[0155] The plasma treatment method according to Supplement 1 or 2, further comprising:

[0156] (ca) a step of disposing a reference substrate on the substrate support portion;

[0157] (cb) generating plasma in the chamber to perform plasma processing on the reference substrate;

[0158] (cc) supplying electric power to each of the plurality of heaters disposed in the substrate support portion;

[0159] (cd) a step of obtaining electric power supplied to each of the plurality of heaters in a state where plasma is generated in the chamber; and

[0160] (ce) calculating reference distribution data, wherein the reference distribution data is data indicating the distribution of ion flux generated between the reference substrate and the plasma, and the reference distribution data can be calculated based on the electric power obtained for each of the plurality of heaters in the reference electric power obtaining step,

[0161] In the plasma processing step (bb) above, the plasma is generated based on the reference distribution data and the first distribution data.

[0162] (Note 4)

[0163] The plasma processing method according to any one of Supplements 1 to 3, wherein:

[0164] The plasma processing step (bb) generates the plasma in the chamber based on a difference between the reference distribution data and the first distribution data.

[0165] (Note 5)

[0166] The plasma processing method according to any one of Supplements 1 to 4, wherein:

[0167] The plasma processing apparatus further includes a storage unit storing a data table associating (1) a change in distribution of electron density of the plasma generated in the chamber with (2) a change in distribution of ion flux generated between the substrate disposed on the substrate support unit and the plasma generated in the chamber,

[0168] The plasma processing step (bb) includes the step of controlling the distribution of the electron density by referring to a data table stored in the storage unit based on a difference between the reference distribution data and the first distribution data.

[0169] (Note 6)

[0170] The plasma processing method according to Supplementary Note 5, wherein:

[0171] The plasma processing device further includes a plurality of electromagnets arranged opposite to the substrate support portion.

[0172] The step of controlling the distribution of the electron density includes the step of controlling at least one of a current and a voltage supplied to the plurality of electromagnets to control the distribution of the electron density.

[0173] (Note 7)

[0174] The plasma treatment method according to Supplementary Note 2, wherein:

[0175] The substrate supporting portion has a substrate supporting surface for supporting the substrate.

[0176] The substrate support surface comprises a plurality of support areas.

[0177] The plurality of heaters are respectively arranged on the substrate supporting portion in each of the plurality of supporting regions.

[0178] (Note 8)

[0179] The plasma treatment method according to Appendix 3, wherein:

[0180] The reference substrate, the first substrate and the second substrate each include a mask film having the same opening pattern.

[0181] (Note 9)

[0182] The plasma processing method according to Appendix 5 or 6, wherein:

[0183] The step of generating the above data table is also included, and the step of generating the above data table includes:

[0184] The step of disposing a dummy substrate on the substrate support portion;

[0185] The step of controlling the electric power supplied to each of the plurality of heaters so that the temperature of each of the plurality of heaters becomes a predetermined temperature in a state where the dummy substrate is arranged on the substrate support portion;

[0186] The step of disposing the dummy substrate on the substrate support portion;

[0187] Generating plasma in the chamber to perform the plasma treatment on the dummy substrate;

[0188] In a state where the plasma processing is performed on the substrate including the mask film, a step of changing the distribution of the electron density of the plasma to obtain electric power supplied to the plurality of heaters; and

[0189] The step of storing in the above-mentioned data table (1) a change in the distribution of the electron density of the plasma generated in the above-mentioned chamber and (2) a change in the distribution of the ion flux generated between the substrate arranged on the above-mentioned substrate support part and the plasma generated in the above-mentioned chamber in association with each other.

[0190] (Note 10)

[0191] The plasma processing method according to any one of Supplements 1 to 4, wherein:

[0192] The plasma processing apparatus further includes a storage unit storing a data table associating (1) a change in distribution of a bias voltage generated between a substrate disposed on the substrate support unit and the plasma generated in the chamber with (2) a change in distribution of an ion flux generated between the substrate disposed on the substrate support unit and the plasma generated in the chamber,

[0193] The plasma processing step (bb) includes the step of controlling the distribution of the bias voltage by referring to a data table stored in the storage unit based on a difference between the reference distribution data and the first distribution data.

[0194] (Note 11)

[0195] The plasma processing method according to Appendix 10, wherein:

[0196] The plasma processing apparatus further includes a ring assembly disposed around the substrate support portion.

[0197] The step of controlling the distribution of the bias voltage includes controlling the voltage applied to the ring assembly to control the distribution of the bias voltage.

[0198] (Note 12)

[0199] The plasma processing method according to Appendix 10, wherein:

[0200] The plasma processing device comprises:

[0201] a ring assembly disposed around the substrate support portion; and

[0202] an actuator configured to adjust the height of the ring assembly relative to the substrate support portion,

[0203] The step of controlling the distribution of the bias voltage includes adjusting the height of the ring assembly to control the distribution of the bias voltage.

[0204] (Note 13)

[0205] A plasma processing device comprises a chamber, a substrate support portion and a control portion arranged in the chamber,

[0206] The control unit performs the following processing:

[0207] (a) pre-storing first distribution data, the first distribution data being data on distribution of ion flux generated between the plasma generated in the chamber and the first substrate disposed on the substrate support portion,

[0208] (ba) placing a second substrate on the substrate support portion,

[0209] (bb) generating plasma in the chamber based on the first distribution data to perform plasma processing on the second substrate.

[0210] The above embodiments are described for illustration and are intended to limit the scope of the present invention. The above embodiments can be variously modified without departing from the scope and gist of the present invention. For example, a part of the components in one embodiment can be added to other embodiments. In addition, a part of the components in one embodiment can be replaced with corresponding components of other embodiments.

[0211] Description of Reference Numerals

[0212] 1... plasma processing device, 2... control unit, 10... plasma processing chamber, 10a... side wall, 10b... bottom wall, 10s... plasma processing space, 12... plasma generating unit, 70... electric power supply unit, 73... wiring, 75... wiring, 81... control unit, 82... supply unit, 83... measuring unit, 111c... partition, 112... ring assembly, 200... heater, 201... resistor, 1110... base, 1110a... flow path, 1111... electrostatic suction cup, 1111a... ceramic component, 1111b... electrostatic electrode.

Claims

1. A plasma treatment method, characterized in that: The plasma processing method generates plasma in a plasma processing apparatus having a chamber and a substrate support portion disposed in the chamber to perform plasma processing on a substrate. The plasma treatment method comprises: (a) pre-storing first distribution data, the first distribution data being data on distribution of ion flux generated between plasma generated in the chamber and a first substrate disposed on the substrate support; (ba) a step of disposing a second substrate on the substrate support portion; and (bb) a plasma processing step of generating plasma in the chamber based on the first profile data to perform plasma processing on the second substrate.

2. The plasma treatment method according to claim 1, characterized in that: The step of saving in (a) comprises: (aa) a step of disposing the first substrate on the substrate support portion; (ab) generating plasma in the chamber to perform the plasma treatment on the first substrate; (ac) supplying electric power to each of a plurality of heaters disposed in the substrate support portion; (ad) a step of obtaining electric power supplied to each of the plurality of heaters in a state where plasma is generated in the chamber; and (ae) A step of calculating the first distribution data based on the electric power acquired for each of the plurality of heaters in the first electric power acquisition step.

3. The plasma treatment method according to claim 1, characterized in that: Also includes: (ca) a step of disposing a reference substrate on the substrate support portion; (cb) generating plasma in the chamber to perform plasma processing on the reference substrate; (cc) supplying electric power to each of a plurality of heaters disposed in the substrate support portion; (cd) a step of obtaining electric power supplied to each of the plurality of heaters in a state where plasma is generated in the chamber; (ce) a step of calculating reference distribution data, wherein the reference distribution data is data indicating the distribution of ion flux generated between the reference substrate and plasma, and the reference distribution data can be calculated based on the electric power acquired for each of the plurality of heaters in the reference electric power acquisition step, In the plasma processing step of (bb), the plasma is generated based on the reference distribution data and the first distribution data.

4. The plasma treatment method according to claim 3, characterized in that: The plasma processing step (bb) includes a process of generating the plasma in the chamber based on the difference between the reference distribution data and the first distribution data.

5. The plasma treatment method according to claim 4, characterized in that: The plasma processing apparatus further includes a storage unit storing a data table associating (1) a change in distribution of electron density of the plasma generated in the chamber with (2) a change in distribution of ion flux generated between a substrate disposed on the substrate support unit and the plasma generated in the chamber, The plasma processing step (bb) includes the step of controlling the distribution of the electron density by referring to a data table stored in the storage unit based on a difference between the reference distribution data and the first distribution data.

6. The plasma treatment method according to claim 5, characterized in that: The plasma processing device further includes a plurality of electromagnets arranged opposite to the substrate support portion. The step of controlling the distribution of the electron density includes the step of controlling at least one of a current and a voltage supplied to the plurality of electromagnets to control the distribution of the electron density.

7. The plasma treatment method according to claim 2, characterized in that: The substrate supporting portion has a substrate supporting surface for supporting the substrate, The substrate support surface comprises a plurality of support areas, The plurality of heaters are respectively arranged in the substrate supporting portion in each of the plurality of supporting regions.

8. The plasma processing method according to claim 3, characterized in that: The reference substrate, the first substrate, and the second substrate respectively include mask films having the same opening pattern.

9. The plasma processing method according to claim 5, characterized in that: The step of generating the data table also includes: The step of disposing a dummy substrate on the substrate support portion; The step of controlling the electric power supplied to each of the plurality of heaters so that the temperature of each of the plurality of heaters becomes a predetermined temperature in a state where the dummy substrate is arranged on the substrate supporting portion; The step of disposing the dummy substrate on the substrate support portion; generating plasma in the chamber to perform the plasma treatment on the dummy substrate; In a state where the plasma processing is performed on the substrate including the mask film, a step of changing the distribution of the electron density of the plasma to obtain electric power supplied to the plurality of heaters; and The step of storing in the data table (1) a change in distribution of electron density of plasma generated in the chamber and (2) a change in distribution of ion flux generated between a substrate arranged on the substrate support portion and the plasma generated in the chamber in association with each other.

10. The plasma processing method according to claim 4, characterized in that: The plasma processing apparatus further includes a storage unit storing a data table associating (1) a change in distribution of a bias voltage generated between a substrate disposed on the substrate support unit and the plasma generated in the chamber with (2) a change in distribution of an ion flux generated between the substrate disposed on the substrate support unit and the plasma generated in the chamber, The plasma processing step (bb) includes the step of controlling the distribution of the bias voltage by referring to a data table stored in the storage unit based on a difference between the reference distribution data and the first distribution data.

11. The plasma processing method according to claim 10, characterized in that: The plasma processing apparatus further includes a ring assembly disposed around the substrate support portion. The step of controlling the distribution of the bias voltage includes a process of controlling the voltage applied to the ring assembly to control the distribution of the bias voltage.

12. The plasma processing method according to claim 10, characterized in that: The plasma processing device comprises: a ring assembly disposed around the substrate support; and an actuator configured to adjust the height of the ring assembly relative to the height of the substrate support, The step of controlling the distribution of the bias voltage includes adjusting the height of the ring assembly to control the distribution of the bias voltage.

13. A plasma processing device, characterized in that: The plasma processing apparatus comprises a chamber, a substrate support portion disposed in the chamber, and a control portion. The control unit performs the following processing: (a) pre-storing first distribution data, the first distribution data being data on distribution of ion flux generated between plasma generated in the chamber and a first substrate disposed on the substrate support portion, (ba) placing a second substrate on the substrate support portion, (bb) generating plasma in the chamber based on the first distribution data to perform plasma processing on the second substrate.

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