Spray head of chemical deposition equipment and chemical deposition equipment

Abstract

The invention provides a spray header of chemical deposition equipment and the chemical deposition equipment, the spray header comprises a gas mixing plate provided with a plurality of vent holes, the gas mixing plate comprises a piezoelectric ceramic material, and after the gas mixing plate is powered on, the aperture size of the vent holes of the gas mixing plate is adjusted. According to the spray header, the uniformity of airflow distribution in the reaction cavity can be adjusted under the condition that the gas mixing plate is not replaced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a shower head of a chemical deposition device and a chemical deposition device. Background Art

[0002] In the deposition reaction of semiconductor equipment, the shower head is an important structural component that affects the process effect. The mixing plate in the shower head is provided with openings. Therefore, after the reaction gas passes through the shower head and reaches the process chamber, the openings of different mixing plates will produce different deposition thicknesses. The openings of general mixing plates are usually evenly distributed, but under special production requirements, it may be necessary to use a mixing plate with a special opening design. The traditional method is to manually replace the mixing plate, which requires the machine to cool down and open the cavity, so there are defects such as complicated processes, time-consuming and labor-intensive. Summary of the invention

[0003] The object of the present invention is to provide a shower head of a chemical deposition device and a chemical deposition device, which are used to adjust the uniformity of gas flow distribution in a reaction chamber without replacing a gas mixing plate.

[0004] In a first aspect, the present invention provides a shower head for a chemical deposition device, comprising: a mixing plate provided with a plurality of vents, the mixing plate comprising a piezoelectric ceramic material, and when the mixing plate is powered on, the aperture size of the vents of the mixing plate is adjusted.

[0005] The beneficial effect of the shower head provided by the present invention is that since the mixing plate includes piezoelectric ceramic material, after voltage is applied, the mixing plate undergoes physical deformation due to the piezoelectric effect, thereby changing the aperture size of the vent hole. In this way, the shower head can adjust the uniformity of the air flow distribution in the reaction chamber without replacing the mixing plate.

[0006] In a possible embodiment, a partial region or the entirety of the gas mixing plate includes piezoelectric ceramic material.

[0007] In a possible embodiment, the mixing plate includes at least three layers, wherein a partial region or the entirety of an upper layer or a middle layer of the mixing plate includes a piezoelectric ceramic material, and the upper layer of the mixing plate is away from the wafer.

[0008] In a possible embodiment, the mixing plate has a plurality of different regions, and the aperture sizes of the vent holes on the mixing plates in different regions can be adjusted independently.

[0009] In a possible embodiment, the piezoelectric ceramic material ratios in different areas of the mixing plate are the same; when the applied voltages in different areas of the mixing plate are different, the aperture sizes of the vent holes in different areas of the mixing plate change differently; when the applied voltages in different areas of the mixing plate are the same, the aperture sizes of the vent holes in different areas of the mixing plate change the same way.

[0010] In another possible embodiment, different regions of the mixing plate have different ratios of piezoelectric ceramic materials. When the same voltage is applied to the entire mixing plate, the aperture sizes of the vents in the same region change in the same way, while the aperture sizes of the vents in different regions change in different ways.

[0011] In a second aspect, the present invention provides a shower head, comprising: a mixing plate provided with a plurality of ventilation holes, the ventilation holes of the mixing plate being covered with a piezoelectric sheet of a piezoelectric ceramic material, the piezoelectric sheet being provided with through holes matching the through holes on the mixing plate, and the aperture size of the ventilation holes being adjusted by adjusting the applied voltage of the piezoelectric sheet to adjust the uniformity of the airflow distribution in the reaction chamber.

[0012] The beneficial effect of the shower head provided by the present invention is that: because the piezoelectric sheet includes piezoelectric ceramic material, the applied voltage is different, and the physical deformation of the piezoelectric sheet due to the piezoelectric effect is different, thereby changing the aperture size of the corresponding vent hole. In this way, the shower head can adjust the uniformity of the air flow distribution in the reaction chamber without replacing the mixing plate.

[0013] In a possible embodiment, the same piezoelectric sheet covers one vent hole or multiple vent holes.

[0014] In another possible embodiment, the reaction chamber of the reactor includes a chemical vapor deposition reaction chamber or an etching reaction chamber.

[0015] In another possible embodiment, the piezoelectric ceramic material includes at least one of lead zirconate titanate, lead titanate and barium titanate.

[0016] In a possible embodiment, the polarization direction of the piezoelectric ceramic material is parallel to the placement direction of the mixing plate, so that the mechanical deformation of the mixing plate is maximized after power is turned on; the voltage range of the piezoelectric ceramic material is 50 to 380V.

[0017] In a third aspect, the present invention provides a deposition device, comprising: a spray device, wherein the spray device comprises a gas channel plate and the spray head as described in the first aspect or the second aspect.

[0018] The beneficial effects of the shower head of the chemical deposition equipment and the chemical deposition equipment provided by the present invention are: because the mixing plate or the piezoelectric sheet includes piezoelectric ceramic material, after the voltage is applied, the mixing plate is physically deformed due to the piezoelectric effect, thereby changing the aperture size of the vent hole, so that the shower head can adjust the uniformity of the air flow distribution in the reaction chamber without replacing the mixing plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the structure of a spray assembly provided by an embodiment of the present invention;

[0020] Figure 2 A front schematic diagram of a gas mixing plate provided by an embodiment of the present invention;

[0021] Figure 3 A schematic diagram of the principle of a piezoelectric ceramic material provided by an embodiment of the present invention;

[0022] Figure 4 The present invention provides a mixing plate with the same material ratio in each region, and the vent holes change before and after different voltages are applied;

[0023] Figure 5 A front schematic diagram of another gas mixing plate provided in an embodiment of the present invention;

[0024] Figure 6 The present invention provides a mixing plate with different material ratios in different regions, and the vent holes change before and after the same voltage is applied;

[0025] Figure 7 This is a schematic diagram of the changes in the vent holes before and after voltage is applied when a piezoelectric sheet is provided under a mixing plate provided by the present invention.

[0026] Reference numerals:

[0027] Cavity 1; spray assembly 2; gas channel plate 22; spray head 21, gas mixing plate 210; gas inlet 11; gas outlet 12; gas diffusion chamber 13; reaction chamber 14. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0029] refer to Figure 1 As shown, an embodiment of the present invention provides a reactor of a deposition device. The spray assembly 2 is arranged in the cavity 1 of the reactor, and the spray assembly 2 includes a gas channel plate 22 arranged at the upper part of the cavity 1 and a spray head 21 arranged in the cavity 1. The gas channel plate 22 is provided with a gas inlet 11, and the gas outlet 12 is located below the cavity 1. The spray head 21 divides the cavity 1 of the reactor into a gas diffusion chamber 13 and a reaction chamber 14, and a wafer base for carrying a wafer is provided in the reaction chamber 14. The gas inlet 11 is in fluid communication with the gas diffusion chamber 13, and the gas outlet 12 is in fluid communication with the reaction chamber 14. The gas inlet 11 is used to introduce reaction gas, and the gas outlet 12 is used to discharge by-products and unreacted reaction gas. The spray head 21 is provided with a plurality of spray holes arranged at intervals, and the spray holes make the gas diffusion chamber 13 and the reaction chamber 14 fluidly connected.

[0030] In this embodiment, the shower head 21 includes a mixing plate 210, such as Figure 2 The mixing plate 210 is provided with a plurality of vent holes arranged at intervals and is divided into a plurality of regions. In some embodiments, the plurality of regions include a circular region and at least one annular region arranged coaxially therewith.

[0031] In one embodiment, the material of a partial area or the whole of the mixing plate includes a piezoelectric ceramic material. In a possible embodiment, the mixing plate includes at least three layers, wherein a partial area or the whole of the upper or middle layer of the mixing plate includes a piezoelectric ceramic material, and the upper layer of the mixing plate refers to the layer away from the wafer. Piezoelectric ceramic material is an information functional ceramic material that can convert mechanical energy and electrical energy into each other. In addition to piezoelectricity, piezoelectric ceramics also have dielectricity and elasticity. Piezoelectric ceramic materials may include at least one of lead zirconate titanate, a lead zirconate titanate mixture, lead titanate and barium titanate. Among them, the piezoelectric ceramic material including lead zirconate titanate may specifically be cadmium niobium zirconate titanate (PCN), cadmium niobium-manganese niobium-zirconium-titanate (PCN-PMN-PZ-PT), manganese niobium lead zirconate titanate (PMN), etc.

[0032] It should be understood that piezoelectric ceramic material is a special material that converts mechanical energy and electrical energy into each other. Piezoelectric ceramic materials include lead zirconate titanate, such as Figure 3 As shown in the figure, the medium of the piezoelectric ceramic material is deformed by the action of force, so that the surface of the medium is charged, which belongs to the positive voltage effect. On the contrary, if a certain excitation electric field is applied to the medium of the piezoelectric ceramic material, the medium will produce mechanical deformation, which belongs to the reverse voltage effect. The principle of reverse voltage deformation is that in the ceramic products after high-temperature sintering of lead zirconate titanate, the ferroelectric grains are in a disordered arrangement state (such as Figure 3 As shown in (a) in the figure, a certain excitation electric field is applied to the medium of the piezoelectric ceramic material, and the medium will produce mechanical deformation (such as Figure 3 As shown in (b) in the figure, after high-voltage DC polarization treatment, the grains inside the ceramic will undergo polarization changes along with the voltage direction, which is manifested as volume changes on a macro scale (such as Figure 3 (c) in the figure), usually along the grain boundary direction, positive voltage stretches, negative voltage shortens. Taking the hole size of the mixing plate with a diameter of 1mm as an example, the ratio of the hole to the ceramic entity is set to 1:1, and the entity deformation rate is up to 1.05%. Then, the maximum hole area difference between the two different regions (voltage difference produces deformation difference) can reach: π(1.015R) 2 -π(0.9895R) 2 =0.042π, i.e., a hole area difference of 4.2%; and the ceramic material is selected, which has the least effect on the PECVD process when powered on. In this embodiment, the polarization direction of the piezoelectric ceramic material is parallel to the placement direction of the mixing plate, so that the mechanical deformation of the mixing plate is maximized after power is turned on, and the voltage range of the piezoelectric ceramic material is 50-380V.

[0033] It can be seen that in one possible case, when the material ratios of various regions of the mixing plate are the same, when the applied voltages of various regions of the mixing plate are the same, the mixing plate will produce mechanical deformation due to the application of a certain excitation electric field. When the applied voltages of different regions of the mixing plate are different, the aperture sizes of the vents in different regions of the mixing plate change differently. When the applied voltages of different regions of the mixing plate are the same, the aperture sizes of the vents in different regions of the mixing plate change the same. For example, Figure 4 As shown in Figure 2, when a positive voltage is applied, the size of the vent hole is as follows: Figure 4 As shown in (a) in the figure, after applying a negative voltage, the aperture size of the vent hole is as follows: Figure 4 As shown in (b) in .

[0034] In another possible case, when the piezoelectric ceramic material ratios in the same area of ​​the mixing plate are the same and the piezoelectric ceramic material ratios in different areas are different, when the same voltage is applied to the mixing plate as a whole, the aperture sizes of the vents in the same area change in the same way, while the aperture sizes of the vents in different areas change in different ways. For example, Figure 5 As shown, the material ratios of the circular area and each outer ring area of ​​the mixing plate are different. When the same voltage is applied to different areas of the mixing plate, the aperture sizes of the vent holes in different areas vary differently due to the different material ratios in different areas of the mixing plate. Then, the aperture size of the vent holes can be adjusted to adjust the uniformity of the airflow distribution in the reaction chamber. In other words, the material ratios in different areas are different, and the aperture expansion degree of different areas is different under the same voltage, so the airflow distribution in different areas can be different. For example, as Figure 6 As shown, before the voltage is applied, the pore size of the mixing plate is as follows: Figure 6 As shown in (a) in the figure, after applying a negative voltage, the pore size of the mixing plate is as follows: Figure 6 In this embodiment, the piezoelectric effect is used to change the air hole flux of the air holes in different regions, so as to meet the deposition requirements of the special film thickness of the deposition equipment.

[0035] In another embodiment, the material of the mixing plate is still the traditional material, but a piezoelectric sheet is added below and / or above the mixing plate. The material of the piezoelectric sheet includes a piezoelectric ceramic material. The specific material composition can be found in the above description. The piezoelectric sheet is provided with through holes that match the through holes on the mixing plate. The shape and distribution of the vent holes are adjusted by adjusting the applied voltage of the piezoelectric sheet to adjust the uniformity of the airflow distribution in the reaction chamber. The same piezoelectric sheet can cover one vent hole or multiple vent holes. For example, Figure 7As shown, piezoelectric sheets are arranged one by one under the vent holes in the outermost ring area of ​​the mixing plate away from the center of the circle. For example, the white circles in the vent holes in the figure are piezoelectric sheets. Before applying voltage, the aperture size of the mixing plate is as follows: Figure 7 As shown in (a) in the figure, after applying a positive voltage, the aperture size of the mixing plate is as follows: Figure 7 As shown in (b) in .

[0036] The beneficial effect of the spray assembly provided by the present invention is that: because the piezoelectric sheet includes piezoelectric ceramic material, the applied voltage is different, and the physical deformation of the piezoelectric sheet due to the piezoelectric effect is different, thereby changing the aperture size of the corresponding vent hole, so that the spray head can adjust the uniformity of the air flow distribution in the reaction chamber without replacing the mixing plate.

[0037] In addition, the present invention provides a chemical deposition device, comprising a spray device, wherein the spray device comprises a gas channel plate and the spray head as described above.

[0038] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A shower head for chemical deposition equipment, characterized in that: It comprises a mixing plate with a plurality of ventilation holes, wherein the mixing plate comprises a piezoelectric ceramic material. When the mixing plate is powered on, the aperture sizes of the ventilation holes of the mixing plate can be adjusted.

2. The shower head according to claim 1, characterized in that: A partial region or the entirety of the gas mixing plate comprises piezoelectric ceramic material.

3. The shower head according to claim 1, characterized in that: A partial region or the entirety of an upper layer or a middle layer of the gas mixing plate comprises a piezoelectric ceramic material, and the upper layer of the gas mixing plate is far away from the wafer.

4. The shower head according to any one of claims 1 to 3, characterized in that: The mixing plate has a plurality of different regions, and the aperture sizes of the vent holes on the mixing plates in different regions can be adjusted independently.

5. The shower head according to any one of claims 1 to 3, characterized in that: The piezoelectric ceramic material ratios in different areas of the mixing plate are the same or different; when the piezoelectric ceramic material ratios in different areas of the mixing plate are the same, when different voltages are applied to different areas of the mixing plate, the aperture sizes of the vents in different areas of the mixing plate change differently, and when the applied voltages in different areas of the mixing plate are the same, the aperture sizes of the vents in different areas of the mixing plate change the same; when the piezoelectric ceramic material ratios in different areas of the mixing plate are different, when the same voltage is applied to the mixing plate as a whole, the aperture sizes of the vents in the same area change the same way, and the aperture sizes of the vents in different areas change differently.

6. A shower head for semiconductor deposition equipment, characterized in that: It comprises a mixing plate provided with a plurality of ventilation holes, wherein the ventilation holes of the mixing plate are covered with a piezoelectric sheet of a piezoelectric ceramic material, and the piezoelectric sheet is provided with through holes matching the through holes on the mixing plate, and the aperture size of the ventilation holes is adjusted by adjusting the applied voltage of the piezoelectric sheet to adjust the uniformity of the airflow distribution in the reaction chamber of the semiconductor deposition equipment.

7. The shower head according to claim 6, characterized in that: The same piezoelectric sheet covers one vent hole or multiple vent holes.

8. The shower head according to any one of claims 1 to 7, characterized in that: The piezoelectric ceramic material includes at least one of lead zirconate titanate, lead titanate and barium titanate.

9. The shower head according to any one of claims 1 to 7, characterized in that: The polarization direction of the piezoelectric ceramic material is parallel to the placement direction of the mixing plate, so that the mechanical deformation of the mixing plate is maximized after power is turned on. The voltage range of the piezoelectric ceramic material is 50 to 380V.

10. A chemical deposition device, characterized in that: The invention comprises a spraying device, wherein the spraying device comprises a gas channel plate and a spray head according to any one of claims 1 to 9.

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