Process chamber and semiconductor process equipment

By adopting a dual sealing assembly design at the RF coil, the problem of insufficient sealing capability of the RF coil in a high vacuum environment is solved, and more reliable sealing performance and higher safety are achieved.

CN119495543AActive Publication Date: 2025-02-21BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
CN202311047893.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-08-18
Publication Date
2025-02-21
Estimated Expiration
2043-08-18

AI Technical Summary

Technical Problem

In the prior art, the sealing capacity of the radio frequency coil in a high vacuum environment is insufficient, resulting in problems of air leakage and liquid leakage.

Method used

The dual sealing assembly design is adopted, the first sealing assembly is used to seal the position of the RF coil through the cavity, and the second sealing assembly is used to seal the connection between the first seal and the RF coil to ensure sealing and insulation.

Benefits of technology

The sealing performance at the radio frequency coil is improved, the sealing and safety in a high vacuum environment is ensured, and the problems of air and liquid leakage are avoided.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a process chamber which comprises a cavity, an isolation assembly arranged in the cavity and a radio frequency coil, the radio frequency coil is used for exciting gas in a generation cavity to generate plasma, the two ends of the radio frequency coil comprise a leading-out section and a leading-in section, and the leading-out section and the leading-in section penetrate through the cavity and extend out of the cavity; the first sealing assembly is connected to the leading-out section, the leading-in section and the cavity and used for sealing the positions, penetrating through the cavity, of the leading-out section and the leading-in section; the second sealing assembly is connected to the leading-out section and the leading-in section and used for sealing the connecting position between the first sealing piece and the leading-out section and the connecting position between the first sealing piece and the leading-in section. According to the radio frequency coil, the first sealing assembly is used for sealing the positions, penetrating through the cavity, of the leading-out section and the leading-in section, the second sealing assembly is also used for sealing the connecting positions between the first sealing piece and the leading-out section and the leading-in section, double sealing is achieved, and the sealing performance at the radio frequency coil is improved. The invention also provides semiconductor process equipment.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a process chamber and semiconductor process equipment. Background Art

[0002] Ion beam etching (IBE) is a dry etching technology with excellent anisotropic etching characteristics. Its main features are that the ion energy and ion density can be controlled separately, and the etching angle can be mechanically adjusted. The main process of ion beam etching is that under the condition of gas pressure less than 1mTorr, the gas is ionized into plasma in the chamber, and then it is accelerated by the grid to become a uniform collimated ion beam with a certain energy, which bombards the substrate surface for etching. Under high vacuum conditions, the uniform parallel ion beam flow drawn by the grid can etch all materials, including various metals, dielectrics and other materials.

[0003] If the function of the IBE machine is to be realized, its RF coil must excite the plasma more efficiently. The ceramic tube inside the chamber used to isolate the RF coil and process gas needs to have a thinner wall thickness. However, the strength of the thin-walled ceramic tube is reduced and it cannot withstand a large internal and external pressure difference. Therefore, it cannot be installed like a conventional etcher, such as placing the outside in the atmosphere and the inside in a vacuum environment. Therefore, the coil must be placed close to the ceramic tube in the chamber and vacuum environment. The following are the operating conditions that the coil must meet: (1) When working in a high vacuum environment (<1mTorr), the RF coil and the chamber must be sealed well; (2) The area around the RF coil must be kept clean to prevent impurities and process gases from causing sparks when the RF coil is powered on, causing damage to the chamber and components; (3) The RF coil is hollow and coolant flows inside to cool it down. The interior of the chamber is closed and in a vacuum environment, and an external heat sink cannot be used for cooling. When the machine is started, the temperature is as high as 100-200°C. Failure to dissipate heat well and heat accumulation will cause damage to the chamber and its components. At the same time, the water cooling inside the chamber also needs to consider its sealing and safety; (4) Ensure that the RF coil is insulated from other components around the chamber to prevent the RF coil from short-circuiting when high-power current is passed, causing safety problems.

[0004] In response to the above requirements, there are some conventional coil design solutions for IBE machines on the market, and the coils are sealed in a vacuum environment and water-cooled and powered. In terms of coil sealing, the existing solutions generally use rubber sealing rings or ferrule joints to seal the axial end of the coil, but their sealing ability is insufficient, because the above two solutions are to seal the axial end surface of the coil, and the RF coil is made of copper, and the internal and external pressure difference at the sealing point is large, causing deformation. The sealing ring and ferrule joint are not easy to seal the gap caused by the deformation of the axial end of the RF coil of the round straight tube, resulting in air and liquid leakage. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber and a semiconductor process equipment, which can solve the technical problem of insufficient sealing ability at the radio frequency coil in a high vacuum environment in the process chamber.

[0006] In order to achieve the purpose of the present invention, a process chamber is provided, comprising: a cavity; an isolation component, arranged in the cavity, the isolation component is used to divide the cavity into a generating cavity and a vacuum cavity that are not connected to each other, the vacuum cavity is located outside the generating cavity; a radio frequency coil, arranged in the vacuum cavity, the radio frequency coil is used to excite the gas in the generating cavity to generate plasma, and the two ends of the radio frequency coil include a lead-out section and an introduction section, the lead-out section and the introduction section pass through the cavity and extend outside the cavity; a first sealing component, connected to the lead-out section and the introduction section and the cavity, used to seal the position where the lead-out section and the introduction section pass through the cavity; a second sealing component, connected to the lead-out section and the introduction section, used to seal the connection between the first sealing component and the lead-out section and the introduction section.

[0007] Furthermore, the first sealing assembly includes a first seal, two second seals and two insulating parts; the first seal is sealingly connected to the cavity, and the first seal is provided with two mounting holes for the lead-out section and the lead-in section to pass through; the two second seals are respectively sleeved outside the lead-out section and the lead-in section, and are respectively sealed with the lead-out section and the lead-in section; the two second seals are respectively passed through the two mounting holes, an insulating part is provided between the outer wall surface of each second seal and the inner wall surface of the passed mounting hole, the second seal is sealed with the passed insulating part, and the insulating part is sealed with the passed mounting hole.

[0008] Furthermore, the first seal and the second seal are made of metal, the first seal is arranged outside the cavity, the connecting surface between the first seal and the cavity is provided with a first serrated contact surface, and the connecting surface between the cavity and the first seal is provided with a second serrated contact surface; the first sealing assembly also includes a first metal gasket, whose opposite side surfaces are respectively in contact with the first serrated contact surface and the second serrated contact surface.

[0009] Furthermore, the second sealing assembly includes: two third seals, which are respectively sleeved on the parts of the lead-out section and the lead-in section located in the vacuum chamber, the third seal is sealed with the lead-out section, and the third seal is sealed with the lead-in section; wherein, the second seal sleeved on the lead-out section is sealedly connected to the third seal, and the second seal sleeved on the lead-out section is sealedly connected to the third seal.

[0010] Further, each second seal includes a second tube body and a second flange connected to each other, the second tube body is provided with a through hole that seals with the lead-out section or the lead-in section, and the second flange is provided at one end of the second tube body facing the third seal; each third seal includes a third tube body and a third flange connected to each other, the third tube body is provided with a through hole that seals with the lead-out section or the lead-in section, and the third flange is provided at one end of the third tube body facing the second seal; wherein the second flange and the third flange are sealed and connected via fasteners.

[0011] Furthermore, the second seal and the third seal are made of metal, and each second seal is provided with a third serrated contact surface on the end face of the third seal that is sealed and connected, and each third seal is provided with a fourth serrated contact surface on the end face of the second seal that is sealed and connected; wherein the second sealing assembly also includes two second metal gaskets, wherein the opposite side surfaces of one second metal gasket are respectively in contact with the third serrated contact surface of the second seal that is sleeved on the lead-out section and the fourth serrated contact surface of the third seal; and the opposite side surfaces of the other second metal gasket are respectively in contact with the third serrated contact surface of the second seal that is sleeved on the introduction section and the fourth serrated contact surface of the introduction section.

[0012] Further, the axial length of the insulating member is greater than the axial length of the first sealing member, and the axial length of the second sealing member is greater than the axial length of the insulating member.

[0013] Furthermore, the lead-in section, the lead-out section and the radio frequency coil are in the shape of hollow metal tubes.

[0014] Furthermore, it also includes: a reaction chamber, which is connected to the generating chamber, and the plasma generated by the gas passing into the generating chamber enters the generating chamber, and the reaction chamber is used to perform process treatment in the plasma atmosphere.

[0015] Furthermore, it also includes: at least one vacuum pumping component, which is arranged outside the cavity and is used to evacuate the vacuum cavity; and a measuring component, which is used to measure the vacuum degree of the vacuum cavity.

[0016] The present invention also provides a semiconductor process equipment, comprising the above process chamber.

[0017] The present invention has the following beneficial effects:

[0018] The present application not only utilizes the first sealing component to seal the position where the lead-out section and the lead-in section penetrate the cavity, but also utilizes the second sealing component to seal the connection between the first sealing component and the lead-out section and the lead-in section. Double sealing can achieve double sealing. Even if a gap is generated at the sealing point of the first sealing component due to deformation of the RF coil, the second sealing component can also perform good sealing on the connection between the first sealing component and the lead-out section and the lead-in section of the RF coil, thereby improving the sealing at the RF coil. The process chamber of the present invention has more reliable sealing performance and higher safety.

[0019] Other objects and features of the present invention will become apparent by reading the specification, claims and drawings of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0021] Figure 1 It is a structural schematic diagram of a process chamber according to an embodiment of the present invention.

[0022] Figure 2 It is a partial structural schematic diagram of a process chamber according to an embodiment of the present invention.

[0023] Figure 3 is an exploded view of a portion of the structure of a process chamber according to an embodiment of the present invention.

[0024] Figure 4 yes Figure 3 sectional view of .

[0025] Description of main component symbols:

[0026] 10. Semiconductor process equipment;

[0027] 100, cavity; 110, upper cover; 120, first body; 130, second body;

[0028] 200, isolation assembly; 210, insulating member; 220, insulating cylinder;

[0029] 300, radio frequency coil; 310, lead-out section; 320, lead-in section;

[0030] 400, first sealing assembly; 410, first sealing member; 420, second sealing member; 421, second tube body; 422, second flange; 430, insulating member; 440, fastener;

[0031] 500, second sealing assembly; 510, third sealing member; 511, third tube body; 512, third flange;

[0032] 610, first metal gasket; 620, second metal gasket; 630, third sealing ring;

[0033] 710. Vacuuming component; 720. Measuring component;

[0034] 810, nozzle; 820, diffuser;

[0035] 910, grid; 911, grid fixing piece; 920, connecting column; 930, coil fixing piece; 940, shielding cover. DETAILED DESCRIPTION

[0036] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0037] In order to achieve the seal between the RF coil and the chamber in the related art, a sealing ring is usually set at the connection where the coil passes through the chamber. In other words, the sealing ring is set on the RF coil, and the sealing ring and the connection hole on the chamber (the coil is located in the connection hole) are interference fit. The inventor of the present invention found through research that the internal and external pressure difference of the RF coil at the sealing part is large, which is easy to deform. The sealing ring is not easy to seal the gap caused by the deformation of the RF coil shaft end, resulting in insufficient sealing ability of the RF coil in a high vacuum environment.

[0038] In order to solve the above problems in the related art, the present invention provides a process chamber. Figure 1 It is a structural schematic diagram of a process chamber according to an embodiment of the present invention. Figure 2 FIG. 1 is a partial structural schematic diagram of a process chamber according to an embodiment of the present invention. Figure 1 and Figure 2 The process chamber includes a chamber body 100 , an isolation assembly 200 , a radio frequency coil 300 , a first sealing assembly 400 and a second sealing assembly 500 .

[0039] The isolation assembly 200 is disposed in the chamber 100. The isolation assembly 200 is used to divide the chamber 100 into a reaction chamber and a vacuum chamber that are not connected to each other.

[0040] It should be noted that the process gas is used to pass into the generating chamber. The vacuum chamber is located outside the generating chamber and is used to place the RF coil 300. The RF coil 300 is arranged around the generating chamber and is used to excite the process gas in the generating chamber to generate plasma after power is turned on.

[0041] The RF coil 300 is disposed in the vacuum chamber. The RF coil 300 is used to excite the gas in the chamber to generate plasma. The two ends of the RF coil 300 include an outgoing section 310 and an incoming section 320 , which penetrate the chamber 100 and extend outside the chamber 100 .

[0042] The first sealing assembly 400 is connected to the lead-out section 310 and the lead-in section 320 as well as the cavity 100 . The first sealing assembly 400 is used to seal the position where the lead-out section 310 and the lead-in section 320 pass through the cavity 100 .

[0043] The second sealing assembly 500 is connected to the lead-out section 310 and the lead-in section 320. The second sealing assembly 500 is used to seal the connection between the first sealing member and the lead-out section 310 and the lead-in section 320.

[0044] Compared with the related art that only seals the connection between the RF coil and the chamber, this embodiment not only uses the first sealing component 400 to seal the position where the lead-out section 310 and the lead-in section 320 pass through the cavity 100, but also creatively designs the second sealing component 500. Further considering that there is also a connection relationship between the first sealing component 400 and the RF coil, since there is a connection relationship, the sealing here will also affect the vacuum degree of the vacuum chamber. Therefore, this embodiment uses the second sealing component 500 to seal the connection between the first sealing component and the lead-out section 310 and the lead-in section 320, thereby improving the sealing of the connection between the first sealing component 400 and the RF coil 300, and further improving the sealing of the vacuum chamber of the cavity 100 in a vacuum environment. By utilizing the double sealing of the first sealing component 400 and the second sealing component 500, even if a gap is generated at the sealing portion of the first sealing component 400 due to deformation of the RF coil, the second sealing component 500 can still well seal the connection between the first sealing component 400 and the lead-out section 310 and the lead-in section 320 of the RF coil 300, thereby improving the sealing performance of the cavity 100 at the RF coil 300. The sealing performance of the process chamber of the embodiment of the present invention is more reliable and safer.

[0045] In some embodiments, the process chamber further includes a reaction chamber, a grid 910 located between the generating chamber and the reaction chamber, a connecting column 920 vertically arranged in the vacuum chamber, and a coil fixing member 930 for fixing the RF coil 300 in the vacuum chamber. The reaction chamber is located below the generating chamber, and the reaction chamber is connected to the generating chamber. The plasma generated by the gas entering the generating chamber enters the reaction chamber through the grid 910. The workpiece to be processed is placed in the reaction chamber, and the reaction chamber is used to perform corresponding process treatment on the workpiece to be processed in the atmosphere of plasma. The grid 910 is used to separate the generating chamber and the reaction chamber, and the grid 910 is fixed to the connecting column 920 by a grid fixing member 911. One end of the connecting column 920 is connected to the grid fixing member 911, and the coil fixing member 930 is arranged on the connecting column 920 to fix the position of the RF coil 300 in the vacuum chamber. It can be understood that the vacuum chamber can be provided with a plurality of coil fixing members 930 and connecting columns 920 to improve the stability of the RF coil 300.

[0046] Specifically, the grid fixing member 911 may be an annular stainless steel structure.

[0047] In some embodiments, the isolation assembly 200 includes an insulating member 210 and an insulating cylinder 220 disposed in the cavity 100. The insulating cylinder 220 is connected to the grid fixing member 911, and a third sealing ring 630 is provided at the connection between the insulating member 210 and the insulating cylinder 220, and a third sealing ring 630 is also provided at the sealing between the insulating cylinder 220 and the grid fixing member 911, so as to improve the sealing between the generating chamber and the vacuum chamber, prevent the gas in the generating chamber from flowing to the vacuum chamber, and thus prevent the gas from diffusing around the RF coil 300.

[0048] Specifically, the insulating member 210 may be made of ceramic material to improve the insulation performance. The insulating cylinder 220 may be made of ceramic material to improve the insulation performance.

[0049] The generating chamber is provided with a nozzle 810 to introduce gas into the generating chamber through the nozzle 810. A third sealing ring 630 is provided at the connection between the nozzle 810 and the chamber body 100 to improve the sealing performance. In order to make the gas close to the energized RF coil 300, the gas can be better excited to generate plasma. A diffusion member 820 can also be provided in the generating chamber. The diffusion member 820 is arranged in a horizontal direction to diffuse the gas to the surroundings. The plasma is accelerated by the grid 910 and emitted to the workpiece of the reaction chamber to realize etching or other processes. Since the process will produce many by-products and impurities, a shielding cover 940 can be installed under the grid fixing member 911 to reduce the impurities from entering the RF coil 300 and prevent the RF coil 300 from igniting.

[0050] Specifically, the diffuser 820 may be made of ceramic.

[0051] In this embodiment, not only the first sealing component 400 is used to seal the position where the lead-out section 310 and the lead-in section 320 pass through the cavity 100, but also the second sealing component 500 is used to seal the connection between the first sealing component and the lead-out section 310 and the lead-in section 320. Double sealing improves the sealing performance at the RF coil 300.

[0052] Figure 3 FIG. 4 is an exploded view of a partial structure of a process chamber according to an embodiment of the present invention. Figure 4 yes Figure 3 See also Figure 2 , Figure 3 and Figure 4 The first sealing assembly 400 includes a first sealing member 410 , two second sealing members 420 and two insulating members 430 .

[0053] The first sealing member 410 is sealingly connected to the cavity 100 , and the first sealing member 410 is provided with two mounting holes for the lead-out section 310 and the lead-in section 320 to pass through.

[0054] The two second seals 420 are respectively sleeved outside the lead-out section 310 and the lead-in section 320, and are respectively sealed with the lead-out section 310 and the lead-in section 320. For example, a sealing ring is provided between the inner wall surface of the second seal 420 and the outer surface of the lead-out section 310, and a sealing ring is provided between the inner wall surface of the second seal 420 and the outer surface of the lead-in section 320, so that the second seal 420 and the lead-out section 310 are sealed with the provided sealing ring, and the second seal 420 and the lead-in section 320 are sealed with the provided sealing ring. The sealing ring can be made of rubber material or other materials that can achieve sealing.

[0055] The two second sealing members 420 are respectively inserted into the two mounting holes, and an insulating member 430 is arranged between the outer wall of each second sealing member 420 and the inner wall of the inserted mounting hole. The second sealing member 420 and the inserted insulating member 430 are sealed together, and the insulating member 430 and the inserted mounting hole are sealed together.

[0056] It should be noted that the first seal 410, the two second seals 420 and the two insulating members 430 can be used as vacuum electrodes to pass through the cavity 100 and transmit various electrical powers, electrical signals, motions, fluids, light beams, etc. at the atmospheric end to the vacuum cavity.

[0057] In some embodiments, the first seal 410 and the second seal 420 are made of metal. Specifically, the first seal 410 is made of stainless steel, the second seal 420 is made of stainless steel, and the insulating member 430 is made of ceramic. The first seal 410, the second seal 420 and the insulating member 430 can be sealed with ceramic metal packaging technology to airtightly connect the first seal 410 and the second seal 420 made of metal with the insulating member 430 made of ceramic.

[0058] The metal material of the first seal 410 and the second seal 420 realizes metal sealing at the sealed connection. Compared with the rubber seal in the related art, the metal seal in this embodiment has two outstanding advantages: 1) the outgassing is far less than that of rubber. Compared with the rubber seal in the related art, the metal seal is more reliable; 2) the system and device sealed with the metal seal can be baked and degassed at high temperature, so compared with the rubber seal in the related art, the sealing is improved and can meet the requirements of ultra-high vacuum.

[0059] The first seal 410 is arranged outside the cavity, and the connection surface between the first seal 410 and the cavity is provided with a first serrated contact surface, and the connection surface between the cavity 100 and the first seal 410 is provided with a second serrated contact surface. The first sealing assembly 400 also includes a first metal gasket 610. The two opposite sides of the first metal gasket 610 are in contact with the first serrated contact surface and the second serrated contact surface respectively. The first seal 410 and the cavity 100 are squeezed through the serrated contact surface to achieve a metal seal between the two, which improves the sealing performance compared with rubber seals and ferrule seals.

[0060] In some embodiments, the first metal washer 610 is made of copper. For example, the first metal washer 610 can be a copper washer.

[0061] The second sealing assembly 500 includes two third sealing members 510. The two third sealing members 510 are respectively sleeved on the portions of the lead-out section 310 and the lead-in section 320 located in the vacuum chamber. The third sealing member 510 is sealed with the lead-out section 310, and the third sealing member 510 is sealed with the lead-in section 320.

[0062] The second sealing member 420 sleeved on the lead-out section 310 is sealedly connected to the third sealing member 510 to seal the connection between the lead-out section 310 and the cavity 100 .

[0063] The second sealing member 420 sleeved on the lead-out section 310 is sealed and connected to the third sealing member 510 to seal the connection between the lead-out section 310 and the cavity 100 .

[0064] Each second sealing member 420 includes a second tube body 421 and a second flange 422 connected to each other. The second tube body 421 is provided with a through hole that is sealed and matched with the lead-out section 310 or the lead-in section 320, and the second flange 422 is provided at one end of the second tube body 421 facing the third sealing member 510. Each third sealing member 510 includes a third tube body 511 and a third flange 512 connected to each other. The third tube body 511 is provided with a through hole that is sealed and matched with the lead-out section 310 or the lead-in section 320, and the third flange 512 is provided at one end of the third tube body 511 facing the second sealing member 420. The second flange 422 and the third flange 512 are sealed and connected by a fastener 440.

[0065] In some embodiments, the fastener 440 may be a screw. That is, the second flange 422 and the third flange 512 are sealed and connected by screws. It is understandable that the fastener 440 may also be other structures or connection methods that can achieve fixed connection, which are not specifically exemplified here.

[0066] The second sealing assembly 500 also includes two second metal washers 620. The second seal 420 and the third seal 510 are made of metal. The end face of each second seal 420 facing the third seal 510 for sealing connection is provided with a third serrated contact surface, and the end face of each third seal 510 facing the second seal 420 for sealing connection is provided with a fourth serrated contact surface. The two opposite side surfaces of one of the second metal washers 620 are respectively in contact with the third serrated contact surface of the second seal 420 and the fourth serrated contact surface of the third seal 510 sleeved on the lead-out section 310, so as to squeeze the second metal washer 620 through the serrated contact surfaces of the second seal 420 and the third seal 510 to achieve a tight metal seal set on the lead-out section 310. Compared with rubber seals in related technologies, the metal seal in this embodiment has two outstanding advantages: 1) outgassing is far less than rubber; 2) systems and devices sealed with it can be baked and degassed at high temperatures, thus improving the sealing performance compared to rubber seals and meeting the requirements of ultra-high vacuum.

[0067] The two opposite side surfaces of another second metal gasket 620 are in contact with the third serrated contact surface of the second seal 420 sleeved on the introduction section 320 and the fourth serrated contact surface of the introduction section 320 respectively, so as to squeeze the second metal gasket 620 through the serrated contact surfaces of the second seal 420 and the third seal 510 to achieve a tight metal seal set in the introduction section 320, thereby improving the sealing performance.

[0068] In some embodiments, the second metal washer 620 may be made of copper. The second metal washer 620 may be a copper washer.

[0069] In some embodiments, the second metal washer 620 is welded to the lead-out section 310. The second metal washer 620 is welded to the lead-in section 320.

[0070] The axial length of the insulating member 430 is greater than the axial length of the first sealing member 410 , and the axial length of the second sealing member 420 is greater than the axial length of the insulating member 430 .

[0071] In some embodiments, the introduction section 320 can be used to introduce a cooling medium, and the outlet section 310 can be used to derive the cooling medium. Of course, the outlet section 310 can also be used to introduce a cooling medium, and the introduction section 320 can also be used to derive the cooling medium.

[0072] The lead-in section 320 , the lead-out section 310 and the RF coil 300 are in the shape of hollow metal tubes to facilitate the flow and introduction and removal of the cooling medium.

[0073] Specifically, the RF coil 300 is integrally formed. The lead-out section 310 and the lead-in section 320 may be straight tube-shaped, and may respectively pass through the cavity 100 and extend outside the cavity 100. The portion extending outside the cavity 100 may be directly or indirectly connected to a cooling source through a cooling pipeline. The cooling source is used to provide a cooling medium, such as a cooling liquid or gas. The cooling medium provided by the cooling source may circulate inside the RF coil 300 through the lead-out section 310 and the lead-in section 320 to cool the cavity 100 and improve its safety in use.

[0074] The RF coil 300 further includes a bent section between the lead-out section 310 and the lead-in section 320 , and the bent section is wound around the generating chamber to excite the gas in the generating chamber to generate plasma.

[0075] The semiconductor processing equipment 10 includes the process chamber of the above-mentioned embodiment.

[0076] In some embodiments, the chamber 100 includes an upper cover 110, a first body 120, and a second body 130 arranged in sequence along the vertical direction. The first body 120 and the upper cover 110 are sealed and connected, and the two are used to form a generating chamber and a vacuum chamber, and a third sealing ring 630 is provided at the connection between the first body 120 and the upper cover 110 to improve the sealing of the connection between the two. The first body 120 and the second body 130 are sealed and connected, and the two are used to form a reaction chamber, and a third sealing ring 630 is provided at the connection between the first body 120 and the second body 130 to improve the sealing of the connection between the two.

[0077] It should be noted that the workpiece is arranged in the reaction chamber and is used for performing corresponding process treatment in the reaction chamber.

[0078] The process chamber further includes at least one vacuum pumping assembly 710 and a measuring assembly 720. The vacuum pumping assembly 710 is disposed outside the chamber 100. The vacuum pumping assembly 710 is used to perform vacuum processing on the vacuum chamber to extract byproducts and gases in the chamber 100. The measuring assembly 720 is used to measure the vacuum degree of the vacuum chamber.

[0079] The following is a detailed description, but it should be understood that this is not intended to limit the present invention.

[0080] Before the process chamber performs the corresponding process, the reaction chamber and the vacuum chamber are first evacuated. When the vacuum degree of the reaction chamber and the vacuum chamber reaches the preset value, the vacuum chamber stops evacuating. In order to maintain the overall high vacuum degree, the reaction chamber continues to be evacuated. When the process is executed, when plasma is introduced into the reaction chamber and the process is performed, the generated impurities and external gases may enter the vacuum chamber through the gap between the shielding cover 940 and the inner wall of the cavity 100, so that the vacuum degree of the vacuum chamber is reduced. Therefore, the vacuum chamber is evacuated to remove by-products such as impurities and gases.

[0081] In order to prevent the byproducts from flowing back into the vacuum chamber (the airflow will flow from the low vacuum degree to the high vacuum degree), when the vacuum degree of the vacuum chamber is lower than the vacuum degree of the reaction chamber, the vacuum pumping of the vacuum chamber is stopped, and the molecular pump of the reaction chamber increases the power to vacuumize, so that the vacuum degree of the reaction chamber is higher than the vacuum degree of the vacuum chamber. The vacuum gauge used to detect the vacuum chamber continuously detects the vacuum degree of the surrounding vacuum chambers, and the above steps are repeatedly and closed-looped to prevent the byproducts from flowing and depositing into the vacuum chamber, improve the cleanliness of the vacuum chamber, and prevent the RF coil 300 from igniting.

[0082] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0083] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0084] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0085] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A process chamber, characterized in that: include: Cavity; An isolation component is disposed in the cavity, and is used to divide the cavity into a generating cavity and a vacuum cavity which are not connected to each other, and the vacuum cavity is located outside the generating cavity; A radio frequency coil is disposed in the vacuum chamber, the radio frequency coil is used to excite the gas in the generating chamber to generate plasma, and the two ends of the radio frequency coil include a lead-out section and an lead-in section, the lead-out section and the lead-in section penetrate the chamber and extend outside the chamber; A first sealing assembly, connected to the lead-out section, the lead-in section and the cavity, and used to seal the position where the lead-out section and the lead-in section penetrate the cavity; The second sealing component is connected to the lead-out section and the lead-in section and is used to seal the connection between the first sealing member and the lead-out section and the lead-in section.

2. The process chamber according to claim 1, characterized in that: The first sealing assembly includes a first sealing member, two second sealing members and two insulating members; The first sealing member is sealed and connected to the cavity, and the first sealing member is provided with two mounting holes for the lead-out section and the lead-in section to pass through; The two second sealing members are respectively sleeved outside the lead-out section and the lead-in section, and are respectively sealed and matched between the lead-out section and the lead-in section; The two second sealing members are respectively penetrated in the two mounting holes, an insulating member is arranged between the outer wall surface of each second sealing member and the inner wall surface of the penetration mounting hole, the second sealing member is sealed with the penetration insulating member, and the insulating member is sealed with the penetration mounting hole.

3. The process chamber according to claim 2, characterized in that: The first sealing member and the second sealing member are made of metal, the first sealing member is arranged outside the cavity, a connecting surface between the first sealing member and the cavity is provided with a first serrated contact surface, and a connecting surface between the cavity and the first sealing member is provided with a second serrated contact surface; The first sealing assembly also includes a first metal gasket, two opposite side surfaces of which are in contact with the first serrated contact surface and the second serrated contact surface respectively.

4. The process chamber according to claim 2, characterized in that: The second sealing assembly comprises: Two third sealing members are respectively sleeved on the lead-out section and the lead-in section located in the vacuum chamber, the third sealing members are in sealing cooperation with the lead-out section, and the third sealing members are in sealing cooperation with the lead-in section; Among them, the second sealing member sleeved on the lead-out section is sealed and connected to the third sealing member, and the second sealing member sleeved on the lead-out section is sealed and connected to the third sealing member.

5. The process chamber according to claim 4, characterized in that: Each of the second sealing members comprises a second tube body and a second flange connected to each other, the second tube body is provided with a through hole which is sealed with the lead-out section or the lead-in section, and the second flange is provided at one end of the second tube body facing the third sealing member; Each of the third sealing members comprises a third tube body and a third flange connected to each other, the third tube body is provided with a through hole which is sealed with the lead-out section or the lead-in section, and the third flange is provided at one end of the third tube body facing the second sealing member; Wherein, the second flange is sealed and connected to the third flange via a fastener.

6. The process chamber according to claim 4, characterized in that: The second seal and the third seal are made of metal, and each end surface of the second seal facing the third seal connected in a sealing manner is provided with a third serrated contact surface, and each end surface of the third seal facing the second seal connected in a sealing manner is provided with a fourth serrated contact surface; Wherein, the second sealing assembly further comprises two second metal washers, wherein two opposite side surfaces of one of the second metal washers are respectively in contact with the third serrated contact surface of the second sealing member sleeved on the lead-out section and the fourth serrated contact surface of the third sealing member; Two opposite side surfaces of another second metal gasket are in contact with the third serrated contact surface of the second sealing member sleeved on the introduction section and the fourth serrated contact surface of the introduction section respectively.

7. The process chamber according to claim 2, characterized in that: The axial length of the insulating member is greater than the axial length of the first sealing member, and the axial length of the second sealing member is greater than the axial length of the insulating member.

8. The process chamber according to claim 2, characterized in that: The lead-in section, the lead-out section and the radio frequency coil are in the shape of hollow metal tubes.

9. The process chamber according to claim 1, characterized in that: Also includes: A reaction chamber is connected with the generating chamber, and the plasma generated by the gas passing into the generating chamber enters the reaction chamber. The reaction chamber is used to perform process treatment in the atmosphere of the plasma.

10. The process chamber according to claim 1, characterized in that: Also includes: At least one vacuum pumping component, which is disposed outside the cavity and is used to perform vacuum pumping on the vacuum cavity; The measuring component is used to measure the vacuum degree of the vacuum chamber.

11. A semiconductor process equipment, characterized in that: A process chamber comprising any one of claims 1 to 10.

Citation Information

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