Electronic device

Abstract

An electronic device includes: a substrate having a first surface, a second surface opposite to the first surface, and a through hole connecting the first surface and the second surface; the first component is arranged on the first surface and is packaged in a first packaging structure; the circuit board is arranged on the second surface; the conductive layer is arranged in the through hole; the metal material is arranged in the through hole and is in contact with the conductive layer; wherein the first component is electrically connected with the conductive layer and the metal material.

Description

[0001] This invention is a divisional application of the invention with application number 201911273163.6, application date December 12, 2019, and invention name “Light-emitting device”. Technical Field

[0002] The present application embodiment relates to an electronic device. Background Art

[0003] Electronic products have become an indispensable necessity in modern society. With the booming development of such electronic products, consumers have high expectations for the quality, function or price of these products.

[0004] Some electronic products have the functions of emitting light or displaying, but the light-emitting devices still do not meet the requirements in all aspects. Summary of the invention

[0005] The embodiment of the present application provides a light-emitting device, including a flexible substrate, a light-emitting unit, a thin film transistor, and a circuit. The flexible substrate has a through hole, a top surface, and a bottom surface. The light-emitting unit is arranged on the top surface of the flexible substrate. The thin film transistor is electrically connected to the light-emitting unit. The circuit is arranged on the bottom surface of the flexible substrate and transmits a signal through the through hole, and the signal drives the light-emitting unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, wherein:

[0007] Figure 1A is a schematic diagram of a light-emitting device according to some embodiments of the present application.

[0008] Figure 1B yes Figure 1A Magnified image of the light-emitting device.

[0009] Figure 2 is a schematic diagram of a light-emitting device according to some embodiments of the present application.

[0010] Figure 3A as well as Figure 3B is a schematic diagram of a light-emitting device according to some embodiments of the present application.

[0011] Figure 4 is a schematic diagram of a light-emitting device according to some embodiments of the present application.

[0012] Figure 5 is a schematic diagram of a light-emitting device according to some embodiments of the present application.

[0013] Figure 6 is a schematic diagram of a light-emitting device according to some embodiments of the present application.

[0014] 7A to 7H It is a schematic diagram of a method for manufacturing a light-emitting device according to some embodiments of the present application.

[0015] FIG. 8A to FIG. 8G It is a schematic diagram of a method for manufacturing a light-emitting device according to some embodiments of the present application.

[0016] Fig.9A 1 is a top view of a light emitting device according to some embodiments of the present application.

[0017] Fig. 9B yes Fig.9A A cross-sectional view of the light emitting device taken along the BB' section line.

[0018] Description of component numbers in the figure: 100, 200, 300A, 300B, 400A, 400B, 500, 600, 700, 1000 Light-emitting device 10 Flexible substrate

[0019] 10A top surface

[0020] 10B bottom surface

[0021] 12 Sidewall

[0022] 20 conductive layer (first conductive layer)

[0023] 22 conductive layer (second conductive layer)

[0024] 26 Conductive materials

[0025] 30 Barrier Layer

[0026] 40 protection layers

[0027] 50 support layers

[0028] 60 connection layers

[0029] 70 Connectors

[0030] Circuits 71, 72, 73, 74, 75

[0031] 76Semiconductor chips

[0032] 80 bonding material

[0033] 91, 93 support substrate

[0034] 92 adhesive layer

[0035] 94 Sacrificial layer

[0036] Part A1, A2, A3, A4

[0037] C, C1, C2, C3 light emitting units

[0038] D1, D2, D3, D4, E1, E2, E3, E4 conductive structures

[0039] O Opening

[0040] P1, P2 packaging structure

[0041] Thin Film Transistor

[0042] T1, T2, T3 thickness

[0043] V, V', V1, V2, V3, V4 through holes

[0044] θ Angle DETAILED DESCRIPTION

[0045] Many different implementation methods or examples are disclosed below to implement the different features of the subject matter provided. The following describes specific embodiments of the components and their arrangements to illustrate the present application. Of course, these embodiments are only for illustration and should not be used to limit the scope of the present application. For example, in the specification, it is mentioned that the first characteristic component is formed on the second characteristic component, which includes an embodiment in which the first characteristic component and the second characteristic component are in direct contact, and also includes an embodiment in which there are other features between the first characteristic component and the second characteristic component, that is, the first characteristic component and the second characteristic component are not in direct contact.

[0046] In addition, repeated numbers or marks may be used in different embodiments, and these repetitions are only for the purpose of simply and clearly describing the present application, and do not represent a specific relationship between the different embodiments and / or structures discussed. In addition, in the present application, forming, connecting to and / or coupling to another feature component on another feature component may include an embodiment in which the feature component is formed to be in direct contact, and may also include an embodiment in which an additional feature component inserted into the above-mentioned feature component can be formed, so that the above-mentioned feature component may not be in direct contact. In addition, space-related words may be used, such as "vertical", "above", "up", "below", "bottom" and similar words (such as "downwardly", "upwardly", etc.), these space-related words are for the convenience of describing the relationship between one (some) element or feature and another (some) element or feature in the accompanying drawings, and these space-related words are intended to cover different directions of the device including the feature.

[0047] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as commonly understood by those skilled in the art. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and this application, and should not be interpreted in an idealized or overly formal manner unless specifically defined herein.

[0048] Here, the terms "about", "approximately", and "substantially" generally mean within 20% of a given value or range, such as within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5%. The numbers given here are approximate numbers, that is, in the absence of specific instructions for "about", "approximately", and "substantially", the meanings of "about", "approximately", and "substantially" can still be implied.

[0049] In addition, in some embodiments of the present application, terms such as "connection" and "interconnection" may refer to two structures being in direct contact, or two structures not being in direct contact, with other structures disposed between the two structures, unless otherwise specified. Such terms may also include situations where both structures are movable or both structures are fixed. In addition, in some embodiments, the aforementioned terms may also include situations where both structures are electrically connected or where both structures are not in direct contact.

[0050] In addition, the phrases “in the range from a first value to a second value” and “range from a first value to a second value” mean that the range includes the first value, the second value, and other values ​​therebetween.

[0051] Figure 1A is a schematic diagram of a light emitting device 100 according to some embodiments of the present application, and Figure 1B yes Figure 1A The light emitting device 100 may include a flexible substrate 10, a conductive layer 20, a conductive layer 22, a barrier layer 30, a protective layer 40, and a light emitting unit C. Figure 1B In the embodiment, the flexible substrate 10 may include a through hole V and has a top surface 10A and a bottom surface 10B. The conductive layer 20 may be disposed on the bottom surface 10B of the flexible substrate 10. The conductive layer 22 may be disposed on the top surface 10A of the flexible substrate 10 and in the through hole V. In some embodiments, the conductive layer 22 may cover the sidewall of the through hole V and the conductive layer 20. The barrier layer 30 may be disposed on the conductive layer 20 and the conductive layer 22. The protective layer 40 may be disposed on the barrier layer 30. The light-emitting unit C may be disposed on the top surface 10A of the flexible substrate 10, and the protective layer 40 may be disposed between the light-emitting unit C and the barrier layer 30. In some embodiments, the protective layer may be electrically connected to the conductive layer 20 through the protective layer 40 and the barrier layer 30. In other embodiments, the protective layer 40 may react when connected to the light-emitting unit C, so that the light-emitting unit C directly contacts the barrier layer 30 (not shown), but is not limited thereto.

[0052] In some embodiments, the flexible substrate 10 may include a substrate and / or a circuit disposed in the substrate. The substrate may include a polymer material, such as polycarbonate (PC), polyimide (PI), polypropylene (PP) or polyethylene terephthalate (PET), other suitable materials, or a combination of the above materials, but not limited thereto. The circuit in the substrate may include a passive matrix (PM) circuit or an active matrix (AM) circuit.

[0053] In some embodiments, the material of the conductive layer 20 and / or the conductive layer 22 may include a conductive material, such as copper, silver, aluminum, gold, molybdenum, titanium, tungsten, tin, nickel, other suitable materials, or a combination of the above materials, but not limited thereto. The material of the barrier layer 30 may include a metal material (such as nickel, platinum, silver, gold, copper, or an alloy thereof), other suitable materials, or a combination of the above materials, but not limited thereto. The material of the protective layer 40 may include a metal material (such as gold, copper, or an alloy thereof), other suitable materials, or a combination of the above materials, but not limited thereto. In one embodiment, the conductive layer 20, the conductive layer 22, the barrier layer 30, and the protective layer 40 may include the same material. In this embodiment, the barrier layer 30 and the protective layer 40 may be regarded as the same layer as the conductive layer 20 and / or the conductive layer 22, but not limited thereto.

[0054] Since the conductive layer 20 and the conductive layer 22 can be located on both sides of the flexible substrate 10, respectively, current signals can be transmitted on both sides of the flexible substrate 10. The barrier layer 30 can be used to protect the conductive layer 20 and / or the conductive layer 22, for example, to reduce the probability of the conductive layer 20 and / or the conductive layer 22 material diffusing to other components and causing impedance changes. The protective layer 40 can protect the conductive layer 20, the conductive layer 22, and / or the barrier layer 30 from reacting with the outside (for example, oxidation).

[0055] In the normal direction (Z direction) of the flexible substrate 10, the thickness T2 of the conductive layer 20 or the thickness T3 of the conductive layer 22 may be less than the thickness T1 of the flexible substrate 10. The thickness T2 of the conductive layer 20 may be the maximum thickness on the bottom surface of the flexible substrate 10. The thickness T3 of the conductive layer 22 may be the thickness in the central area of ​​the through hole V or on the top surface 10A. For example, in some embodiments, the thickness T1 of the flexible substrate 10 may be less than or equal to about 150 microns, such as 120 microns, 100 microns, 80 microns, 50 microns, or 30 microns, but not limited thereto. The thickness T2 of the conductive layer 20 or the thickness T3 of the conductive layer 22 may be less than or equal to about 100 microns, such as 80 microns, 60 microns, 50 microns, 30 microns, or 10 microns. In addition, in some embodiments, the thickness T2 of the conductive layer 20 may be substantially equal to the thickness T3 of the conductive layer 22, but not limited thereto. By designing the thickness T1 of the flexible substrate 10 to be less than about 150 micrometers or designing the thickness T2 of the conductive layer 20 or the thickness T3 of the conductive layer 22 to be less than about 100 micrometers, the size of the light emitting device 100 can be reduced to achieve miniaturization.

[0056] In some embodiments, the light emitting unit C may include, for example, a light emitting diode (LED), other suitable elements or combinations thereof, but is not limited thereto. The light emitting diode may include, for example, an inorganic light emitting diode (ILD), an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED, a quantum dot (QD), a quantum dot light emitting diode (QLED, QDLED), a fluorescence material, a phosphor material, other suitable materials, or a combination thereof, but is not limited thereto. In some embodiments, a packaging structure P1 may be provided on the light emitting unit C to protect the light emitting unit C. In some embodiments, the material of the packaging structure P1 may include an organic polymer, an inorganic polymer, glass, or a combination thereof, but is not limited thereto. In some embodiments, the packaging structure P1 may be transparent or translucent to allow light from the light emitting unit C to pass through, but is not limited thereto.

[0057] Next, please refer to Figure 2, which is a schematic diagram of a light-emitting device 200 of some embodiments of the present application. The flexible substrate 10 of the light-emitting device 200 may include at least one thin-film transistor T (thin-film transistor, TFT), for example, disposed on a substrate (not shown) to drive other elements (such as light-emitting units C), but is not limited thereto. In some embodiments, the thin-film transistor T may include a top gate thin-film transistor, a bottom gate thin-film transistor, a double gate and / or dual gate thin-film transistor, or a combination thereof, but is not limited thereto. In some embodiments, the thin-film transistor T may include a semiconductor material, such as amorphous silicon, polysilicon (polysilicon, such as low temperature polysilicon (LTPS)), an oxide semiconductor (such as indium gallium zinc oxide (IGZO)), other metal oxides, other suitable materials, or a combination of the above materials, but is not limited thereto. In some embodiments, different thin-film transistors T may include the above-mentioned different semiconductor materials, but are not limited thereto. For example, one thin-film transistor T may include low temperature polysilicon, and another thin-film transistor T may include an oxide semiconductor, but is not limited thereto.

[0058] In addition, in the light-emitting device 200, the flexible substrate 10 further includes a support layer 50, and a connection layer 60 disposed between the flexible substrate 10 and the support layer 50. The support layer 50 may be disposed on a side of the flexible substrate 10 away from the light-emitting unit C, that is, the flexible substrate 10 may be located between the support layer 50 and the light-emitting unit C. The material of the support layer 50 may include glass, aluminum, or other suitable materials, but is not limited thereto. In one embodiment, the support layer 50 may include a circuit board, but is not limited thereto. In some embodiments, the hardness of the support layer 50 may be greater than the hardness of the flexible substrate 10 to increase the strength of the light-emitting device 200. The material of the connection layer 60 may include epoxy glue, silicon glue, photoresist, other suitable adhesive materials, or a combination thereof, but is not limited thereto. The connection layer 60 may be used to connect the flexible substrate 10 and the support layer 50. In addition, in some embodiments, the connection layer 60 can be used to reduce the corrosion or oxidation of the conductive layer 20, the barrier layer 30, the protective layer 40, etc. due to exposure to the outside, thereby protecting the conductive layer 20, the barrier layer 30, the protective layer 40, etc. In some embodiments, after forming the light-emitting device 200 with the support layer 50, the support layer 50 and the connection layer 60 can be replaced with a suitable soft material, such as polyimide, a flexible circuit board, or polyethylene terephthalate (PET), thereby obtaining a light-emitting device with a flexible substrate, but is not limited thereto.

[0059] Next, please refer to Figure 3A as well as Figure 3B , which are schematic diagrams of a light-emitting device 300A and a light-emitting device 300B in some embodiments of the present application. In the light-emitting device 300A, the thin film transistor T and the light-emitting unit C can be arranged on the same side of a substrate (not shown), and can be electrically connected to other components through a circuit arranged on the other side of the substrate, so that the thin film transistor T can receive a signal. In the light-emitting device 300B, the thin film transistor T and the light-emitting unit C can be respectively arranged on opposite sides of a substrate (not shown). In this way, different process or design requirements can be met. It should be noted that in Figure 3B For the sake of simplicity, some lines connected to the thin film transistor T are omitted.

[0060] In some embodiments, at least one opening O may be formed in the support layer 50 and the connection layer 60 to dispose various elements on the side of the flexible substrate 10 that does not have the light-emitting unit. In some embodiments, the opening O may completely pass through or may not completely pass through the connection layer 60. For example, Figure 3A as well as Figure 3BAs shown, an electronic component 70 may be disposed in the opening O, that is, disposed near the bottom surface 10B of the flexible substrate 10. In some embodiments, the electronic component 70 may include a connector, a semiconductor chip, other appropriate electronic components, or a combination thereof. In other embodiments, such as Figure 3B As shown, the thin film transistor T and the light emitting unit C are respectively arranged on both sides of the substrate, which can increase the space for arranging the light emitting unit on the top surface 10A of the flexible substrate 10. The electronic component 70 can be used to electrically connect the aforementioned light emitting unit C, thin film transistor T, etc. to the outside world through the circuit and the through hole V (for example, to transmit the signal that drives the light emitting unit C and / or the thin film transistor T). In addition, the conductive layer 20, the barrier layer 30, the protective layer 40, etc. can also be electrically connected to the outside world through the electronic component 70, but are not limited to this. In one embodiment, the semiconductor chip can be used to control various components (such as the light emitting unit C, the thin film transistor T, etc.) in the light emitting device 300A or the light emitting device 300B. By arranging the semiconductor chip in the opening O, the size of the light emitting device 300A or the light emitting device 300B can be reduced. In some embodiments, in the normal direction (Z direction) of the flexible substrate 10, the thickness of the semiconductor chip may be less than the sum of the thickness of the support layer 50 and the thickness of the connection layer 60, thereby allowing the semiconductor chip to be protected in the opening O, but not limited thereto, in other embodiments, the thickness of the semiconductor chip may also be greater than or equal to the sum of the thickness of the support layer 50 and the thickness of the connection layer 60. In some embodiments, a connector and a semiconductor chip may be provided in the light emitting device at the same time, depending on design requirements.

[0061] In some embodiments, Figure 3B As shown, multiple light-emitting units C can be packaged in a single packaging structure P2, thereby simplifying the manufacturing process. Figure 3A The light emitting unit C and the thin film transistor T are arranged on the same side of the substrate, and the plurality of light emitting units C are respectively packaged with a packaging structure P1, and Figure 3B The light-emitting unit C and the thin film transistor T are arranged on opposite sides of the substrate, and the plurality of light-emitting units C are packaged with a single package structure P2, but the present application is not limited thereto. For example, the present application also includes embodiments in which the light-emitting unit C and the thin film transistor T are arranged on the same side of the substrate, and the plurality of light-emitting units C are packaged with a single package structure P2, and embodiments in which the light-emitting unit C and the thin film transistor T are arranged on opposite sides of the substrate, and the plurality of light-emitting units C are respectively packaged with a plurality of package structures P1, depending on design requirements.

[0062] Figure 4is a schematic diagram of a light-emitting device 500 of some embodiments of the present application. The light-emitting device 500 is substantially the same as the aforementioned light-emitting device 100, the difference being that the through hole V' of the light-emitting device 500 has an inclined side wall, and other similar structures are not described in detail herein. The angle θ between the side wall 12 of the through hole V' and the bottom surface 10B of the flexible substrate 10 may be between 30 degrees and 120 degrees (30 degrees ≤ angle θ ≤ 120 degrees), for example, 50 degrees, 60 degrees, 70 degrees, 90 degrees, 100 degrees, or 110 degrees. In this way, the conductive layer 20 can be more easily in contact with the conductive layer 22, or the conductive layer 22 is less likely to break.

[0063] Figure 5 is a partially enlarged schematic diagram of the light-emitting device 600 of some embodiments of the present application. It should be noted that, for the sake of simplicity, the aforementioned light-emitting unit C is not shown in the light-emitting device 600. After the conductive layer 22, the barrier layer 30, the protective layer 40, etc. are set in the through hole V of the flexible substrate 10, a bonding material 80 may be additionally set in the through hole V. The bonding material 80 may include silver paste, copper paste, nano metal powder, solder, other appropriate materials, or a combination of the above, but not limited thereto. The bonding material 80 can be used to electrically connect conductive structures such as the conductive layer 22, the barrier layer 30, the protective layer 40 and other components (such as the aforementioned light-emitting unit C), but not limited thereto. In one embodiment, since the bonding material 80 can be filled in the gap of the through hole V, the mechanical strength of the light-emitting device 600 at the through hole V during the manufacturing process can be enhanced, but not limited thereto.

[0064] Figure 6 is a schematic diagram of a light emitting device 700 of some embodiments of the present application. The light emitting device 700 is different from the aforementioned embodiments in that the through hole V may include a conductive material 26, and the conductive layer 22 may be electrically connected to the conductive layer 20 through the conductive material 26. The conductive material 26 may include, for example, a metal material (such as copper, silver, gold, aluminum, nickel, tungsten, tin, or an alloy thereof), other suitable materials, or a combination of the above materials, but is not limited thereto. In this way, the conductive layer 20 and the conductive layer 22 disposed on both sides of the flexible substrate 10 may also be electrically connected to each other.

[0065] 7A to 7H FIG. 1 is a schematic diagram of a method for forming a light emitting device (such as the aforementioned light emitting device 100) according to some embodiments of the present application. Fig. 7AIn the embodiment, a support substrate 91 is provided, and a flexible substrate 10 is connected to the support substrate 91 through an adhesive layer 92. The flexible substrate 10 may include a thin film transistor. In other embodiments, a substrate (not shown) may be connected to the support substrate 91, and then a circuit layer or a thin film transistor (not shown) may be formed on the substrate to form the flexible substrate 10. The material of the support substrate 91 may include glass or other appropriate materials, but is not limited thereto. The material of the adhesive layer 92 may include epoxy glue, silicon glue, photoresist, optical clear adhesive and optical clear resin, other appropriate materials, or a combination thereof, but is not limited thereto. In some embodiments, the hardness of the support substrate 91 may be greater than the hardness of the flexible substrate 10, so that support may be provided for subsequent processing of the flexible substrate 10. In some embodiments, the flexible substrate 10 may include the aforementioned thin film transistor T. In one embodiment, the adhesive layer 92 may not be required, and the flexible substrate 10 may be directly formed on the support substrate 91 by a coating process to simplify the process. For example, a coating process may be used to form the base material of the flexible substrate 10 on the support substrate 91 , and then a circuit layer of the flexible substrate 10 may be formed.

[0066] Then, in Figure 7B In the embodiment, a conductive layer 20 is disposed on the flexible substrate 10, and the conductive layer 20 may be patterned. In some embodiments, the patterned conductive layer 20 may be disposed by sputtering, plating, photolithography, and / or screen printing, but is not limited thereto.

[0067] exist Figure 7C In the embodiment, a barrier layer 30 and / or a protective layer 40 may be disposed on the conductive layer 20. The barrier layer 30 and / or the protective layer 40 may be disposed by electroplating, chemical plating, etc., but is not limited thereto. Fig.7D In the embodiment, the support layer 50 can be connected to the flexible substrate 10 via the connection layer 60, wherein the connection layer 60 can surround the conductive layer 20, the barrier layer 30, and the protective layer 40. Fig. 7E In the embodiment, the entire structure can be flipped so that the flexible substrate 10 is located above the support layer 50, and the support substrate 91 and the adhesive layer 92 are removed by chemical etching, laser lift-off, or mechanical stripping, and then a through hole V can be formed in the flexible substrate 10 by laser and / or photolithography etching, but the present invention is not limited thereto. Figure 7FIn the embodiment, the conductive layer 22, the barrier layer 30, and the protective layer 40 can be formed on the flexible substrate 10 and in the through hole V. The conductive layer 22 can be formed by sputtering, electroplating, photolithography, etc., and the barrier layer 30 and the protective layer 40 can be provided by electroplating, chemical plating, etc., but the present invention is not limited thereto. In some embodiments, Figure 7F After the steps, Figure 7G As shown, the support layer 50 and / or the connecting layer 60 may be removed. Figure 7H As shown, in Figure 7F After the step of removing or retaining the support layer 50 and the connection layer 60, the light emitting unit C can be disposed on the flexible substrate 10 and electrically connected to other elements (not shown) on the flexible substrate 10 through the conductive layer 20, the conductive layer 22, the barrier layer 30, and the protective layer 40. However, the present application is not limited thereto and may also be Figure 7G After the step, a new support layer and / or connection layer 60 is formed.

[0068] FIG. 8A to FIG. 8G 8A is a schematic diagram of another method for manufacturing a light-emitting device (such as the aforementioned light-emitting device 100) in some embodiments of the present application. In FIG. 8A, a support substrate 93 and a sacrificial layer 94 disposed on the support substrate 93 may be provided. The material and function of the support substrate 93 may be the same or similar to the aforementioned support substrate 91, and will not be repeated here. The material of the sacrificial layer 94 may include glue, photoresist, amorphous silicon, polymer material, other suitable materials or a combination of the above materials, but is not limited thereto.

[0069] exist Figure 8B In the embodiment of the present invention, the conductive layer 20 may be formed on the sacrificial layer 94. In FIG. 8C , a flexible substrate 10 may be provided on the sacrificial layer 94. The flexible substrate 10 may be formed by coating a layer of a suitable substrate material (such as the substrate material of the flexible substrate 10 described above) on the sacrificial layer 94 and providing an active element (such as the thin film transistor T described above) or a circuit layer in the substrate material, but is not limited thereto.

[0070] exist Fig.8D In the embodiment, a through hole V is formed on the flexible substrate 10 at a position corresponding to the conductive layer 20. Fig. 8E In the process, a conductive layer 22, a barrier layer 30, and a protective layer 40 are formed on the flexible substrate 10 and in the through hole V.

[0071] exist Fig.8F In the embodiment, the support substrate 93 and the sacrificial layer 94 are removed to expose the conductive layer 20. The support substrate 93 and the sacrificial layer 94 can be removed by laser, chemical etching, etc., but are not limited thereto. In one embodiment, a portion of the flexible substrate 10 can be further removed, but are not limited thereto. Afterwards, a barrier layer 30 and a protective layer 40 are formed on the conductive layer 20. Finally, Figure 8G In the embodiment, the light-emitting unit C is disposed on the flexible substrate 10 and is electrically connected to other elements (not shown) on the flexible substrate 10 through the conductive layer 20, the conductive layer 22, the barrier layer 30, and the protective layer 40, thereby forming the aforementioned light-emitting device.

[0072] In some embodiments, the aforementioned light emitting device may be, for example, a light emitting diode light emitting device. For example, Fig.9A is a top view of a light emitting device 1000 according to some embodiments of the present application, and Fig. 9B yes Fig.9A A cross-sectional view of a light-emitting device along the BB' section line. The light-emitting device 1000 may include, for example, a light-emitting unit C1, a light-emitting unit C2, and a light-emitting unit C3. In some embodiments, the light-emitting unit C1, the light-emitting unit C2, and the light-emitting unit C3 may emit light of different colors (for example, red, green, blue, and yellow light), or may emit light of the same color, but is not limited thereto. In some embodiments, since the substrate provided in the present application has good precision, the spacing distance (PN gap) between the positive electrode and the negative electrode of the light-emitting unit C1, the light-emitting unit C2, and the light-emitting unit C3 may be less than 50 microns to meet the needs of miniaturization.

[0073] like Fig.9A as well as Fig. 9B As shown, one of the positive and negative electrodes (e.g., the positive electrode) of the light-emitting unit C1, the light-emitting unit C2, and the light-emitting unit C3 can be electrically connected to the conductive structure E1 (including the conductive layer 22, the barrier layer 30, and the protective layer 40) disposed on the top surface 10A of the flexible substrate 10, and is electrically connected to the conductive structure D1 (including the conductive layer 20, the barrier layer 30, and the protective layer 40) disposed on the bottom surface 9B of the flexible substrate 10 through the through hole V1. Fig.9A In other words, the light emitting unit C1, the light emitting unit C2, and the light emitting unit C3 may have a common electrode (positive electrode or negative electrode). Thus, the number of electrodes required may be reduced. In one embodiment, a portion of the conductive structure E1 may overlap with the light emitting unit C1, the light emitting unit C2, and the light emitting unit C3 in a top view direction.

[0074] The other electrodes (e.g., negative electrodes) of the light-emitting units C1, C2, and C3 can be respectively connected to the conductive structures E2, E3, and E4 (including the conductive layer 22, the barrier layer 30, and the protective layer 40) disposed on the top surface 10A of the flexible substrate 10, and then electrically connected to the conductive structures D2, D3, and D4 (including the conductive layer 20, the barrier layer 30, and the protective layer 40) disposed on the bottom surface 10B of the flexible substrate 10 through the through holes V2, V3, and V4, respectively. Fig.9AIn other words, the positive electrode and the negative electrode of the light-emitting unit C1, the light-emitting unit C2, and the light-emitting unit C3 are electrically separated. In one embodiment, a portion of the conductive structure E2 may overlap with the light-emitting unit C1 in the top-view direction. A portion of the conductive structure E3 may overlap with the light-emitting unit C2 in the top-view direction. A portion of the conductive structure E4 may overlap with the light-emitting unit C3 in the top-view direction. However, the present application is not limited to this, and only two of the light-emitting units C1, C2, and C3 may share an electrode, or the light-emitting units C1, C2, and C3 may not share an electrode. In this way, each light-emitting unit C1, C2, and C3 can be controlled individually.

[0075] In summary, the embodiments of the present application provide a light-emitting device with a high-precision substrate. By improving the precision of the substrate, the size of the substrate can be reduced to achieve miniaturization. It should be noted that the materials, material layer thickness, contours, structures, circuits, etc. of various components described in the aforementioned embodiments are only examples, and the sizes or ranges described are only for illustration, and the present application is not limited thereto.

[0076] The light-emitting device described in the aforementioned embodiments of the present application may also integrate a touch function as a touch-controlled electronic device. In addition, the light-emitting device or touch-controlled electronic device described in the aforementioned embodiments of the present application may be applied to any electronic device, such as a display, mobile phone, watch, laptop computer, video camera, camera, mobile navigation device, television, etc. However, the aforementioned devices are only examples, and the application of the present application is not limited thereto. The aforementioned electronic device may include a display device, an antenna device, a sensing device or a splicing device, a bendable or flexible electronic device, but is not limited thereto. The light-emitting device described in the aforementioned embodiments of the present application may also be applied to an antenna device with a touch function or other types of display devices. In addition, the light-emitting device described in the aforementioned embodiments of the present application may also be used in a backlight module of a display device. The features of each embodiment may be mixed and matched as they do not violate the spirit of the invention or conflict with each other.

[0077] Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the claims.

Claims

1. An electronic device, comprising: A substrate having a first surface, a second surface opposite to the first surface, and a through hole connecting the first surface and the second surface; A first component is disposed on the first surface and packaged in a first packaging structure; A circuit board is disposed on the second surface; a conductive layer disposed in the through hole; A metal material is disposed in the through hole and contacts the conductive layer; The first component, the conductive layer and the metal material are electrically connected.

2. The electronic device according to claim 1, wherein: The through hole has an inclined side wall.

3. The electronic device according to claim 2, wherein: At least a portion of the metal material is located between at least a portion of the conductive layer and the sidewall of the through hole.

4. The electronic device according to claim 1, wherein: The material of the conductive layer includes copper.

5. The electronic device according to claim 1, wherein: The first encapsulation structure includes an organic material.

6. The electronic device as claimed in claim 1, wherein: It further comprises a second component which is disposed on the first surface and packaged in a second packaging structure.

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