Laser wavelength determination method and device, electronic equipment and storage medium

Abstract

The invention provides a laser wavelength determination method and device, electronic equipment and a storage medium. The method comprises the following steps: acquiring absorption coefficients and refractive indexes of a target material to lasers with different wavelengths; determining an absorption coefficient curve of the target material according to the absorption coefficient and the wavelength of the laser; determining a refractive index curve of the target material according to the refractive index and the wavelength of the laser; and according to the absorption coefficient curve and the refractive index curve, determining the optimal wavelength of the target material for absorbing the energy of the laser. According to the method, the photo-thermal characteristics of a target material are determined by acquiring the absorption coefficient and the refractive index of the target material to laser with different wavelengths, so that the absorption coefficient curve and the refractive index curve of the target material are determined; and according to the absorption coefficient curve and the refractive index curve, the optimal wavelength with the optimal laser energy absorption coefficient is determined, so that the absorption coefficient of the target material to the laser energy in the semiconductor chip production and manufacturing process by bonding is improved, and finally the production and manufacturing efficiency of a de-bonding process in semiconductor chip production is improved.

Description

Technical Field

[0001] The present application relates to the field of laser technology in semiconductor chip manufacturing, and in particular to a method, device, electronic device and storage medium for laser wavelength. Background Art

[0002] The absorption coefficient of laser energy by a material typically varies depending on the laser wavelength. For example, when debonding a bonded substrate and support, laser light is often used to irradiate the bonding material. After absorbing the laser energy, the bonding material undergoes chemical changes, destroying the bond between the substrate and support, thereby debonding the material.

[0003] Clearly, the efficiency of debonding is determined by the material's absorption coefficient of laser light. However, different wavelengths of laser light typically absorb varying amounts of energy in materials. Therefore, determining the optimal wavelength for laser energy absorption by a material has become a pressing issue for improving processes requiring laser energy, such as debonding. Summary of the Invention

[0004] The purpose of this application is to provide a method, device, electronic device and storage medium for determining laser wavelength, which can determine the laser wavelength with the best laser energy absorption coefficient of the target material, thereby improving the efficiency of industrial production.

[0005] In a first aspect, the present application provides a method for determining a laser wavelength, comprising: obtaining the absorption coefficient and refractive index of a target material for lasers of different wavelengths; determining an absorption coefficient curve of the target material based on the absorption coefficient and the wavelength of the laser; determining a refractive index curve of the target material based on the refractive index and the wavelength of the laser; and determining an optimal wavelength for the target material to absorb the energy of the laser based on the absorption coefficient curve and the refractive index curve.

[0006] The above-mentioned method for determining the laser wavelength obtains the absorption coefficient and refractive index of the target material to lasers of different wavelengths to determine the photothermal properties of the target material, thereby determining the absorption coefficient curve and refractive index curve of the target material, and determining the optimal wavelength for absorbing laser energy based on the absorption coefficient curve and refractive index curve, and determining the absorption strength of the target material to the laser energy during the debonding process of semiconductor chip production and manufacturing. Ultimately, by selecting the appropriate wavelength, the production and manufacturing efficiency of the debonding process in semiconductor chip production is improved.

[0007] In combination with the first aspect, optionally, the target material includes a bonding material for a silicon wafer.

[0008] The above-mentioned method for determining the laser wavelength is specifically applied to determine the wavelength of the laser required in the debonding process of the silicon wafer. The suitable wavelength improves the absorption of the laser energy by the bonding material, thereby improving the efficiency of the debonding.

[0009] In combination with the first aspect, optionally, determining the optimal wavelength for the target material to absorb the energy of the laser light based on the absorption coefficient curve and the refractive index curve includes: determining the optimal wavelength based on the absorption coefficient curve, the refractive index curve, and a calculation formula for the interface reflectivity of a silicon wafer; wherein the calculation formula for the interface reflectivity of the silicon wafer is:

[0010] R=[(n Si -n1) 2 +k 2 ] / [(n Si +n1) 2 +k 2 ];

[0011] Wherein, R represents the interface reflectivity, n1 represents the refractive index of the bonding material, and n Si Characterizes the refractive index of the silicon wafer, k=λα / 4π, k characterizes the extinction coefficient of the bonding material, λ characterizes the wavelength of the laser, and α characterizes the absorption coefficient of the bonding material.

[0012] The above-mentioned method for determining the laser wavelength determines the optimal wavelength based on the absorption coefficient curve and the refractive index curve, thereby improving the accuracy of the determined optimal wavelength, thereby selecting a suitable laser wavelength, improving the absorption of laser energy by the bonding material during the debonding process, and correspondingly improving the debonding efficiency.

[0013] In combination with the first aspect, optionally, the optimal wavelength for the bonding material to absorb the energy of the laser is 1100 nm to 3000 nm.

[0014] The above-mentioned method for determining the laser wavelength, by specifically targeting an optimal wavelength between 1100nm and 3000nm, ensures that most bonding materials have a relatively high absorption coefficient for lasers within this wavelength range. This relatively high absorption coefficient for most materials within the same wavelength range eliminates the need to frequently switch the output laser wavelength depending on the bonding material during the debonding process. This simplifies the debonding process for different bonding materials and ultimately further improves debonding efficiency.

[0015] In combination with the first aspect, optionally, the method for determining the laser wavelength further includes: determining a depth of the laser penetrating the bonding material according to the absorption coefficient and the wavelength of the laser, and determining a basic thickness of the bonding material based on the depth.

[0016] The above method for determining laser wavelength uses the absorption coefficient and laser wavelength to determine the thickness of the bonding material through which the laser penetrates, thus enabling selection of the optimal bonding material thickness during the bonding process. Since bonding material thickness also affects bonding efficiency, determining an appropriate bonding material thickness further improves bonding efficiency.

[0017] In combination with the first aspect, optionally, determining the depth of the laser penetrating the bonding material based on the absorption coefficient and the wavelength of the laser includes: calculating the depth of the laser penetrating the bonding material based on a penetration depth calculation formula; wherein the penetration depth calculation formula is:

[0018] h=λ / 4πα;

[0019] Wherein, h represents the depth of the laser penetrating the bonding material, λ represents the wavelength of the laser, and α represents the absorption coefficient of the bonding material.

[0020] The above-mentioned method for determining the laser wavelength realizes the calculation of the penetration depth through one of the specific penetration depth calculation formulas provided, and the calculation formula is relatively simple, thereby simplifying the logical algorithm of the entire method for determining the laser wavelength, thereby reducing the resource occupation of the method for determining the laser wavelength during operation and improving the operating efficiency of the method for determining the laser wavelength.

[0021] In combination with the first aspect, optionally, the bonding material has a thickness of 20 nm to 100 nm.

[0022] The above-mentioned method for determining the laser wavelength, by specifically determining the bonding material thickness to be between 20nm and 100nm, allows the bonding material thickness to be determined within a range of 20nm to 100nm for different bonding materials during the bonding process. This ensures that the bonding material absorbs the maximum amount of laser energy during the bonding process, avoiding the need to frequently change bonding equipment parameters to adjust the bonding material thickness for different bonding materials. This simplifies the bonding process for different bonding materials and ultimately improves bonding efficiency.

[0023] In a second aspect, the present application also provides a device for determining a laser wavelength, comprising: an acquisition module for acquiring the absorption coefficient and refractive index of a target material for lasers of different wavelengths; a calculation module for determining an absorption coefficient curve of the target material based on the absorption coefficient and the wavelength of the laser; the calculation module is also used to determine the refractive index curve of the target material based on the refractive index and the wavelength of the laser; a determination module for determining the optimal wavelength for the target material to absorb the energy of the laser based on the absorption coefficient curve and the refractive index curve.

[0024] The above-mentioned laser wavelength determination device has the same beneficial effects as the laser wavelength determination method provided by the above-mentioned first aspect, or any optional implementation manner of the first aspect, and will not be described in detail here.

[0025] In a third aspect, the present application further provides an electronic device comprising: a processor and a memory, wherein the memory stores machine-readable instructions executable by the processor, and when the machine-readable instructions are executed by the processor, the method described above is performed.

[0026] The above-mentioned electronic device has the same beneficial effects as the method for determining the laser wavelength provided by the above-mentioned first aspect or any optional implementation manner of the first aspect, and will not be described in detail here.

[0027] In a fourth aspect, the present application further provides a storage medium, which includes a computer-readable storage medium, on which a computer program is stored, and the computer program executes the method described above when executed by a processor.

[0028] The above-mentioned storage medium has the same beneficial effects as the method for determining the laser wavelength provided by the above-mentioned first aspect, or any optional implementation manner of the first aspect, and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0030] Figure 1 A flow chart of a method for determining laser wavelength provided in an embodiment of the present application;

[0031] Figure 2 This is a graph showing the photothermal characteristics of some materials provided in the examples of this application;

[0032] Figure 3 A graph showing the photothermal characteristics of another part of the materials provided in the embodiments of the present application;

[0033] Figure 4 A functional module diagram of a device for determining laser wavelength provided in an embodiment of the present application;

[0034] Figure 5 A schematic diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0035] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0037] In the description of the embodiments of this application, the technical terms "first," "second," etc. are used only to distinguish different objects and should not be understood to indicate or imply relative importance or to implicitly indicate the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise specifically defined.

[0038] Please refer to Figure 1 , Figure 1 Flowchart of the method for determining the laser wavelength provided by the embodiment of the present application. The method for determining the laser wavelength provided by the embodiment of the present application may include:

[0039] Step S110: Obtaining the absorption coefficient and refractive index of the target material to lasers of different wavelengths.

[0040] In step S110 above, different materials typically have different photothermal properties, so not all wavelengths of laser light are compatible with these materials. Therefore, obtaining the absorption coefficient and refractive index of the target material for laser light of different wavelengths can determine the photothermal properties of the target material. The target material may be tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide, or molybdenum disilicide, which are used for bonding.

[0041] Step S120: determining an absorption coefficient curve of the target material according to the absorption coefficient and the wavelength of the laser.

[0042] Step S130: determining a refractive index curve of the target material according to the refractive index and the wavelength of the laser.

[0043] In the above steps S120 and S130, please refer to Figure 2 and Figure 3 , Figure 2 This is a graph showing the photothermal characteristics of some materials provided in the examples of this application; Figure 3 This is a photothermal characteristic curve of another part of the material provided in the embodiment of this application. Figure 2 and Figure 3As can be seen from the figure, the absorption coefficient curve can reflect the trend of the target material's absorption coefficient of laser energy changing with wavelength. Similarly, the refractive index curve can reflect the trend of the target material's refractive index of laser energy changing with wavelength.

[0044] Step S140: determining the optimal wavelength for the target material to absorb the energy of the laser according to the absorption coefficient curve and the refractive index curve.

[0045] In the above step S140 , the optimal wavelength for the target material to absorb laser energy can be determined based on the absorption coefficient curve and the refractive index curve. The optimal wavelength can be a specific wavelength value or a wavelength range with a better absorption coefficient.

[0046] In the above implementation process, the absorption coefficient and refractive index of the bonding material to lasers of different wavelengths are obtained to determine the photothermal properties of the bonding material, thereby determining the absorption coefficient curve and refractive index curve of the bonding material, and based on the absorption coefficient curve and refractive index curve, determining the optimal wavelength with the best laser energy absorption coefficient, thereby selecting a suitable laser wavelength, improving the absorption of laser energy by the bonding material in the semiconductor chip production process, and ultimately improving the production efficiency of the debonding process in semiconductor chip production.

[0047] In some alternative embodiments, the target material may include a bonding material for a silicon wafer.

[0048] That is to say, the method for determining the laser wavelength provided in the previous embodiments of the present application can be specifically applied to the debonding process of the substrate and the supporting carrier.

[0049] In the above implementation process, by applying the laser wavelength determination method specifically to the determination of the laser wavelength required in the debonding process of the substrate and the supporting carrier, the absorption coefficient of the bonding material to the laser energy is improved, thereby improving the debonding efficiency.

[0050] In some optional implementations, step S140 may include:

[0051] Step S141: Determine the optimal wavelength based on the absorption coefficient curve, the refractive index curve, and the interface reflectivity calculation formula of the silicon wafer. The interface reflectivity calculation formula of the silicon wafer is:

[0052] R=[(n Si -n1) 2 +k 2 ] / [(n Si +n1) 2 +k 2 ].

[0053] Where R represents the interface reflectivity, n1 represents the refractive index of the bonding material, and n Si Characterizes the refractive index of the silicon wafer, k = λα / 4π, k represents the extinction coefficient of the bonding material, λ represents the wavelength of the laser, and α represents the absorption coefficient of the bonding material.

[0054] In the above step S141, Figure 2 and Figure 3 As can be seen in the figure, the absorption coefficient of most materials not only decreases slightly with increasing wavelength, but the refractive index also decreases with increasing wavelength. This means that within the wavelength range where silicon does not absorb, the absorption coefficient and refractive index of the bonding material will decrease with changes in wavelength. If the wavelength fluctuates, not only the absorption coefficient will fluctuate. Therefore, combined with the above interface reflectivity calculation formula, when the laser wavelength changes, the energy of the laser entering the debonding material will change with the dual fluctuations of the refractive index and extinction coefficient, ultimately causing fluctuations in the debonding results.

[0055] In the above implementation process, the interface reflectivity of the silicon wafer is calculated using the interface reflectivity calculation formula, and the optimal wavelength is determined based on the interface reflectivity combined with the absorption coefficient curve and the refractive index curve, thereby improving the accuracy of the determined optimal wavelength. Therefore, the selection of a suitable laser wavelength indirectly improves the absorption coefficient of the bonding material to the laser energy during the debonding process, thereby correspondingly improving the debonding efficiency.

[0056] In some optional embodiments, the bonding material has an optimal wavelength for absorbing laser energy of 1100 nm to 3000 nm.

[0057] from Figure 2 and Figure 3 It can be seen that most materials have relatively high absorption coefficients for lasers in the wavelength range of 1100nm to 3000nm.

[0058] In the above implementation, by specifically targeting the optimal wavelength at 1100nm to 3000nm, most materials have a relatively high absorption coefficient for lasers within this wavelength range. This relatively high absorption coefficient for most materials for lasers within the same wavelength range eliminates the need to frequently switch the output laser wavelength based on the different bonding materials during the debonding process. This simplifies the debonding process for different bonding materials and ultimately further improves debonding efficiency.

[0059] The method for determining the laser wavelength provided in the embodiment of the present application may further include:

[0060] Step S150: determining the depth of the laser penetrating the bonding material according to the absorption coefficient and the wavelength of the laser, and determining the thickness of the bonding material according to the depth.

[0061] In step S150, the depth of the laser light entering the bonding material is the light penetration length, which is related to the absorption coefficient of the debonding material. This parameter is also related to the wavelength. After selecting the operating wavelength of the debonding laser and the bonding material used, the basic thickness of the bonding material can be basically determined. If the thickness of the bonding material itself significantly exceeds this basic thickness, the laser light will generally not be able to fully penetrate the bonding material, thereby affecting the debonding efficiency.

[0062] In this implementation, the thickness of the bonding material through which the laser penetrates is determined by the absorption coefficient and the laser wavelength, enabling the optimal thickness of the bonding material to be selected during the debonding process. Since the thickness of the bonding material also affects the efficiency of debonding, determining the thickness of the bonding material further improves debonding efficiency.

[0063] In some optional implementations, step S150 may include:

[0064] Step S151: Calculate the depth of laser penetration into the bonding material according to the penetration depth calculation formula. The penetration depth calculation formula is:

[0065] h=λ / 4πα.

[0066] Where h represents the depth of laser penetration into the bonding material, λ represents the wavelength of the laser, and α represents the absorption coefficient of the bonding material.

[0067] In the above implementation process, the penetration depth is calculated by using one of the specific penetration depth calculation formulas provided, and the calculation formula is relatively simple, thereby simplifying the logical algorithm of the entire laser wavelength determination method, thereby reducing the resource usage of the laser wavelength determination method during operation and improving the operating efficiency of the laser wavelength determination method.

[0068] In some optional embodiments, the bonding material has a thickness of 20 nm to 100 nm.

[0069] Please refer to Table 1. It can be seen from Table 1 that the penetration length of most materials is mostly within 20nm to 100nm.

[0070] Table 1

[0071]

[0072] In the above implementation process, by specifically determining the bonding material thickness to be 20nm to 100nm, the bonding material thickness is uniformly determined to be 20nm to 100nm for different bonding materials during the bonding process. This ensures that the bonding material's absorption of laser light during the bonding process is understood, thus avoiding the need to frequently change the bonding equipment parameters to adjust the bonding material thickness for different bonding materials. This simplifies the bonding process for different bonding materials and ultimately improves the efficiency of bonding.

[0073] Please refer to Figure 4 , Figure 4 This is a functional block diagram of a laser wavelength determination device 400 provided in an embodiment of the present application. Based on the same concept, an embodiment of the present application provides a laser wavelength determination device 400, which may include: an acquisition module 410, which may be used to obtain the absorption coefficient and refractive index of a target material for lasers of different wavelengths; a calculation module 420, which may be used to determine an absorption coefficient curve of the target material based on the absorption coefficient and the wavelength of the laser; the calculation module 420 may also be used to determine a refractive index curve of the target material based on the refractive index and the wavelength of the laser; and a determination module 430, which may be used to determine the optimal wavelength for the target material to absorb the laser energy based on the absorption coefficient curve and the refractive index curve.

[0074] In some alternative embodiments, the target material may include a substrate and a bonding material supporting the panel.

[0075] As some optional implementations, in the process of determining the optimal wavelength for the target material to absorb the laser energy based on the absorption coefficient curve and the refractive index curve, the determination module 430 can be specifically configured to determine the optimal wavelength based on the absorption coefficient curve, the refractive index curve, and a calculation formula for the interface reflectivity of the silicon wafer; wherein the calculation formula for the interface reflectivity of the silicon wafer is:

[0076] R=[(n Si -n1) 2 +k 2 ] / [(n Si +n1) 2 +k 2 ];

[0077] Where R represents the interface reflectivity, n1 represents the refractive index of the bonding material, and n Si Characterizes the refractive index of the silicon wafer, k = λα / 4π, k represents the extinction coefficient of the bonding material, λ represents the wavelength of the laser, and α represents the absorption coefficient of the bonding material.

[0078] In some optional embodiments, the bonding material has an optimal wavelength for absorbing laser energy of 1100 nm to 3000 nm.

[0079] In some optional implementations, the determination module 430 may also be configured to determine the depth of laser penetration into the bonding material based on the absorption coefficient and the wavelength of the laser, and determine the thickness of the bonding material based on the depth.

[0080] As some optional implementations, in the process of determining the depth of laser penetration into the bonding material based on the absorption coefficient and the wavelength of the laser, the determination module 430 may further specifically be configured to calculate the depth of laser penetration into the bonding material based on a penetration depth calculation formula; wherein the penetration depth calculation formula is:

[0081] h=λ / 4πα;

[0082] Where h represents the depth of laser penetration into the bonding material, λ represents the wavelength of the laser, and α represents the absorption coefficient of the bonding material.

[0083] In some optional embodiments, the bonding material has a thickness of 20 nm to 100 nm.

[0084] It should be understood that the device corresponds to the aforementioned embodiment of the method for determining the laser wavelength and is capable of executing each of the steps involved in the aforementioned method embodiment. The specific functions of the device can be found in the description above, and a detailed description is omitted here to avoid repetition. The device includes at least one software functional module that can be stored in a memory in the form of software or firmware or embedded in the device's operating system (OS).

[0085] Please refer to Figure 5 , Figure 5 Schematic diagram of an electronic device provided by an embodiment of the present application. Based on the same concept, an embodiment of the present application provides an electronic device 500, which may include a memory 511, a storage controller 512, a processor 513, a peripheral interface 514, an input and output unit 515, and a display unit 516. A person skilled in the art will understand that Figure 5 The structure shown is only for illustration and does not limit the structure of the electronic device 500. For example, the electronic device 500 may further include Figure 5 More or fewer components than shown, or with Figure 5 Different configurations shown.

[0086] The aforementioned memory 511, storage controller 512, processor 513, peripheral interface 514, input / output unit 515, and display unit 516 are electrically connected to each other, directly or indirectly, to enable data transmission or interaction. For example, these components can be electrically connected to each other via one or more communication buses or signal lines. The aforementioned processor 513 is used to execute the executable modules stored in the memory.

[0087] The memory 511 may be, but is not limited to, a random access memory (RAM), a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), etc. The memory 511 is used to store programs, and the processor 513 executes the programs after receiving an execution instruction. The method executed by the electronic device 500 defined by the process disclosed in any embodiment of the present application can be applied to the processor 513 or implemented by the processor 513.

[0088] The processor 513 may be an integrated circuit chip with signal processing capabilities. The processor 513 may be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. The various methods, steps, and logic block diagrams disclosed in the embodiments of the present application may be implemented or executed. The general-purpose processor may be a microprocessor or any conventional processor.

[0089] The peripheral interface 514 couples various input / output devices to the processor 513 and the memory 511. In some embodiments, the peripheral interface 514, the processor 513, and the memory controller 512 can be implemented in a single chip. In other embodiments, they can be implemented in separate chips.

[0090] The input and output unit 515 is used to provide input data to the user. The input and output unit 515 can be, but is not limited to, a mouse and a keyboard.

[0091] The above-mentioned display unit 516 provides an interactive interface (such as a user operation interface) between the electronic device 500 and the user or is used to display image data for the user's reference. In the embodiment of the present application, the display unit can be a liquid crystal display or a touch display. If it is a touch display, it can be a capacitive touch screen or a resistive touch screen that supports single-point and multi-touch operations. Supporting single-point and multi-touch operations means that the touch display can sense touch operations generated simultaneously from one or more positions on the touch display, and the sensed touch operations are handed over to the processor for calculation and processing.

[0092] The electronic device 500 in the embodiment of the present application can be used to execute each step in each method provided in the embodiment of the present application.

[0093] Based on the same concept, an embodiment of the present application further provides a storage medium, which includes a computer-readable storage medium having a computer program stored thereon, and the computer program executes the above method when executed by a processor.

[0094] Among them, the computer-readable storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0095] In the several embodiments provided in the embodiments of the present application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architectures, functions, and operations of the devices, methods, and computer program products according to the multiple embodiments of the embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment, or a portion of code, and the module, program segment, or a portion of code contains one or more executable instructions for implementing the specified logical functions. It should also be noted that in some alternative implementations, the functions marked in the boxes can also occur in a different order than the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or action, or can be implemented using a combination of dedicated hardware and computer instructions.

[0096] In addition, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0097] The above description is only an optional implementation method of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited to this. Any technician familiar with this technical field can easily think of changes or replacements within the technical scope disclosed in the embodiment of the present application, and they should all be covered by the protection scope of the embodiment of the present application.

Claims

1. A method for determining a laser wavelength, characterized in that: include: Obtain the absorption coefficient and refractive index of the target material to lasers of different wavelengths; Determining an absorption coefficient curve of the target material according to the absorption coefficient and the wavelength of the laser; Determining a refractive index curve of the target material according to the refractive index and the wavelength of the laser; as well as The optimal wavelength for the target material to absorb the energy of the laser is determined according to the absorption coefficient curve and the refractive index curve.

2. The method according to claim 1, characterized in that in, The target material includes a bonding material for a silicon wafer.

3. The method according to claim 2, characterized in that The step of determining the optimal wavelength for the target material to absorb the energy of the laser according to the absorption coefficient curve and the refractive index curve comprises: The optimal wavelength is determined according to the absorption coefficient curve, the refractive index curve and the interface reflectivity calculation formula of the silicon wafer; wherein the interface reflectivity calculation formula of the silicon wafer is: R=[(n Si -n1) 2 +k 2 ] / [(n Si +n1) 2 +k 2 ]; Wherein, R represents the interface reflectivity, n1 represents the refractive index of the bonding material, and n Si Characterizes the refractive index of the silicon wafer, k=λα / 4π, k characterizes the extinction coefficient of the bonding material, λ characterizes the wavelength of the laser, and α characterizes the absorption coefficient of the bonding material.

4. The method according to claim 3, characterized in that: The optimal wavelength for the bonding material to absorb the energy of the laser is 1100nm to 3000nm.

5. The method according to claim 2, characterized in that: The method further comprises: The depth of the laser penetrating the bonding material is determined according to the absorption coefficient and the wavelength of the laser, and the thickness of the bonding material is determined according to the depth.

6. The method according to claim 5, characterized in that The step of determining the depth of the laser penetrating the bonding material according to the absorption coefficient and the wavelength of the laser comprises: The depth of the laser penetrating the bonding material is calculated according to a penetration depth calculation formula; wherein the penetration depth calculation formula is: h = λ / 4πα; In the formula, h represents the depth of the laser penetrating the bonding material, λ represents the wavelength of the laser, and α represents the absorption coefficient of the bonding material.

7. The method according to claim 6, characterized in that The bonding material has a thickness of 20 nm to 100 nm.

8. A device for determining laser wavelength, characterized in that: include: An acquisition module is used to obtain the absorption coefficient and refractive index of the target material to lasers of different wavelengths; A calculation module, used to determine an absorption coefficient curve of the target material according to the absorption coefficient and the wavelength of the laser; The calculation module is also used to determine the refractive index curve of the target material according to the refractive index and the wavelength of the laser; A determination module is used to determine the optimal wavelength for the target material to absorb the energy of the laser according to the absorption coefficient curve and the refractive index curve.

9. An electronic device, characterized in that: include: A processor and a memory, wherein the memory stores machine-readable instructions executable by the processor, and when the machine-readable instructions are executed by the processor, the method according to any one of claims 1 to 7 is performed.

10. A storage medium, characterized in that: The storage medium comprises a computer-readable storage medium; a computer program is stored on the computer-readable storage medium, and the computer program executes the method according to any one of claims 1 to 7 when executed by a processor.

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