Pressure testing device of double-rate synchronous dynamic random access memory for space navigation
By designing a pressure test device with double-rate synchronized dynamic random memory for aerospace with a memory particle test fixture and a heat flow control system, the problem of inability to effectively conduct performance testing and stability assessment in the full temperature range in the prior art is solved, and pressure assessment and performance screening of DDR devices at specific temperatures are realized.
Patent Information
- Application Number
- CN202411627727.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-14
- Publication Date
- 2025-02-25
AI Technical Summary
The prior art lacks a stress test device for double-rate synchronous dynamic random memory for aerospace, and cannot effectively conduct performance testing and stability assessments within the full temperature range.
A pressure testing device for double-rate synchronous dynamic random memory for aerospace is designed, including memory particle testing fixtures, standard memory interfaces, computer motherboards, USB flash drives, heat flow hoods, heat flow meters and heat flow conduits. It can conduct pressure evaluation of DDR devices at specific temperatures, and replace the DDR devices through memory particle testing fixtures for performance screening and pressure evaluation of multiple DDR devices.
It realizes fast and accurate ambient temperature regulation, and can perform pressure assessment of DDR devices at specific temperatures, meeting the high performance and stability requirements of aerospace applications.
Smart Images
Figure CN119517144A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a pressure test device for a double-rate synchronous dynamic random access memory for aerospace, belonging to the technical field of aerospace component quality assurance and testing. Background Art
[0002] Double-rate synchronous dynamic random access memory for aerospace use includes DDR1, DDR2, DDR3, DDR4, etc. (referred to as "DDR"), which is usually used as the memory of computer systems and is the storage space that the CPU directly addresses at high speed. Compared with traditional SDRAM, DDR has a double transmission rate, that is, data is transmitted once on the rising edge and once on the falling edge in one clock cycle. By introducing pre-reading technology to improve transmission speed and optimizing power management to reduce power consumption, subsequent generations of DDR devices have been continuously developed.
[0003] DDR is usually used as memory to support FPGA, DSP and CPU to form a specific electronic system. Its working speed and data stability greatly affect the performance of the single machine. In the production process, DDR for aerospace generally includes static parameter testing, dynamic parameter testing and timing logic function testing at high and low temperatures and room temperature by automatic test equipment (ATE) to verify the parameter index compliance and function of each device. However, it cannot give a conclusion on the long-term operation stability under three-temperature and high-speed mode. It requires aerospace users to verify it separately in combination with test cases in actual application scenarios.
[0004] At present, the tests that must be carried out when DDR is used for aerospace missions in China are mainly to complete the three-temperature test of parameters and functions according to the electrical characteristics table of the device, which is implemented in the original factory production stage or the identification and certification stage of the quality assurance agency. In the application verification stage of aerospace components or the user's single-machine verification stage, although stability tests are carried out in actual application scenarios, a derating design will be used in aerospace applications, and the frequency, timing, test graphics and test time of DDR operation cannot achieve the purpose of evaluating its highest performance and stability.
[0005] Currently, there is no targeted stress test equipment for DDR for aerospace use, nor a dedicated test platform for performance and stability evaluation. Only device-level parameter and function test boards based on ATE are used for screening tests, or function test boards based on aerospace application scenarios are used for user verification tests. The memory test in the electronics industry is to assemble DDR into a memory stick, install it directly into a computer and run the evaluation software to perform performance tests. This method cannot perform performance tests and stability evaluations at specific temperature points within the full temperature range, nor can it replace the particles on the memory stick (i.e., DDR devices) to perform performance screening tests under three temperatures. Summary of the invention
[0006] The purpose of the present invention is to overcome the shortcomings of the prior art and propose a double-rate synchronous dynamic random access memory stress test device for aerospace use, which can realize environmental temperature adjustment and DDR stress evaluation at a specific temperature; at the same time, DDR devices can be replaced by a memory particle test fixture, which can be used for performance screening and stress evaluation of multiple DDR devices.
[0007] The technical solution adopted by the present invention is:
[0008] A pressure test device for aerospace double-rate synchronous dynamic random access memory, comprising: a memory particle test fixture, a standard memory interface, a computer mainboard, a U disk, a heat flow cover, a heat flow instrument and a heat flow conduit;
[0009] The double rate synchronous dynamic random access memory to be tested is installed on the memory particle test fixture according to the corresponding interface, and is installed in the standard memory interface on the computer motherboard through the memory particle test fixture; the heat flow cover is installed on the memory particle test fixture to form a cavity, and the heat flow meter conducts high temperature or low temperature airflow through the heat flow conduit to control the ambient temperature of the double rate synchronous dynamic random access memory to be tested during the test;
[0010] The stress test of the tested double-rate synchronous dynamic random access memory is realized by using the startup program and test software pre-stored in the U disk.
[0011] Furthermore, a heat flow meter is used to independently control the temperature of the tested double-rate synchronous dynamic random access memory, and quickly switch to the specified temperature within seconds.
[0012] Furthermore, the memory particle test fixture is provided with memory particle interface sockets of different generations of memory such as DDR1, DDR2, DDR3, DDR4 and DDR5, which are used for crimping the memory particles under test. The memory particle test fixture can withstand an ambient temperature of -55°C to +125°C for a long time.
[0013] Furthermore, the double-rate synchronous dynamic random access memory under test can be replaced by a memory particle test fixture for performance screening and stress evaluation.
[0014] Furthermore, the memory chip interface socket and the computer mainboard are replaced according to the type of the double rate synchronous dynamic random access memory to be tested, and the test software pre-stored in the USB flash drive is updated.
[0015] Furthermore, the stress testing device has a basic function test mode, a stress test mode, a consistency test mode and a deep error detection mode.
[0016] Furthermore, the basic function test mode is used to verify the data read and write capability and rate of the double rate synchronous dynamic random access memory under test, and the specific implementation steps are as follows:
[0017] (a) Install the memory under test into the memory chip test fixture of the test device, set the initial parameters in the test software configuration interface, including memory specifications, voltage, and frequency; and select the data width during the test;
[0018] (b) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature;
[0019] (c) Run the test software and record the read and write speed and bit error rate of the memory under test.
[0020] Furthermore, the stress test mode is used to check the stability of the tested double rate synchronous dynamic random access memory under high load operating conditions, and the specific implementation steps are as follows:
[0021] (a) Install the memory under test into the memory chip test fixture of the test device, set the initial parameters in the test software configuration interface, including memory specifications, voltage, frequency, and the timing configuration is the highest performance mode;
[0022] (b) Select the corresponding test program according to the memory capacity to simulate the real high load condition;
[0023] (c) Set the stress test running time and abnormal stop conditions;
[0024] (d) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature;
[0025] (e) Initiate the test and record the test results.
[0026] Furthermore, the consistency test mode is used to ensure the timing consistency of the memory read and write interface and test the correctness of the data after multiple reads and writes. The specific implementation is as follows:
[0027] (a) Install the memory under test into the memory chip test fixture of the test device, and set the initial parameters in the test software configuration interface, including memory specifications, voltage, frequency, and timing parameters;
[0028] (b) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature;
[0029] (c) Start the consistency test, send the specified data to the memory under test, continuously read and compare the written data, and monitor the data transmission between the test equipment and the memory under test in real time;
[0030] (d) Record the test cycle, test parameter settings and all errors and exception information.
[0031] Furthermore, a deep error detection mode is used to detect multiple error types, including overlay address conflicts, burst errors, and decoding errors;
[0032] The specific implementation is:
[0033] (a) Install the memory under test into the memory chip test fixture of the test device, and set the initial parameters in the test software configuration interface, including memory specifications, voltage, frequency, and timing parameters;
[0034] (b) Determine the test patterns according to the test requirements, including walking 0 / 1, March, moving reversal, address complement, and RowHammer;
[0035] (c) Setting the number of processors, cache size, and number of loops used for testing;
[0036] (d) Start the test and record the test results and the addresses and data of errors reported during the test.
[0037] In a second aspect, the present invention further provides a stress testing method, comprising the following steps:
[0038] (1) Establish and prepare the test environment;
[0039] Define the test objectives, clarify the model specifications, system specifications and package size of the tested double-rate synchronous dynamic random access memory, and design the interface sockets on the memory particle test fixture; modify the test software configuration data in a targeted manner according to the memory model specifications, system specification information and test requirements to meet the timing parameter requirements of the DDR memory after power-on; control the test environment temperature through a heat flow meter to achieve the purpose of testing at different temperature points;
[0040] (2) Test environment configuration and initialization;
[0041] Install the test program into a USB flash drive and make the USB flash drive a boot disk. The computer system will enter the test interface by default when it is turned on. Set the test level, frequency and timing parameters before starting the test to ensure that the tested double-rate synchronous dynamic random access memory can start normally.
[0042] (3) Test program execution;
[0043] Enter the memory test software graphical user interface, select the test mode, and set the operation mode and number of cycles; the operation mode includes the number of processor cores and whether to enable high-speed cache;
[0044] Start the test program and perform automated testing according to the selected test mode;
[0045] (4) Monitor and record test dynamics, including test progress, ongoing test items, and detected anomalies; record deviations and failure points that occur during testing, including error classification, frequency of occurrence, and corresponding addresses.
[0046] The beneficial effects of the present invention compared with the prior art are:
[0047] The invention discloses a pressure test device for a double rate synchronous dynamic random access memory for aerospace use, which has the capability of rapidly and accurately adjusting the ambient temperature and can complete the DDR pressure test at a specific temperature; the DDR device can be replaced by a memory particle test fixture and can be used for the performance screening and pressure test of multiple DDR devices; the device has the capability of rapid and easy software configuration and installation and is compatible with the functions and performance of the original development board. BRIEF DESCRIPTION OF THE DRAWINGS
[0048] Figure 1 This is a schematic diagram of the composition of a space microprocessor performance evaluation device. DETAILED DESCRIPTION
[0049] In order to better understand the above technical solution, the specific implementation of the present invention is further described in detail below with reference to the accompanying drawings.
[0050] like Figure 1 As shown, the present invention proposes a pressure test device for aerospace double rate synchronous dynamic random access memory, comprising: a memory particle test fixture 2, a standard memory interface 3, a computer motherboard 5, a U disk 6, a heat flow cover 9, a heat flow instrument 10 and a heat flow conduit 11;
[0051] The double rate synchronous dynamic random access memory 1 to be tested is installed on the memory particle test fixture 2 according to the corresponding interface, and is installed in the standard memory interface 3 on the computer motherboard 5 through the memory particle test fixture 2; the heat flow cover 9 is installed on the memory particle test fixture 2 to form a cavity, and the heat flow meter 10 conducts high temperature or low temperature airflow through the heat flow conduit 11 to control the ambient temperature of the double rate synchronous dynamic random access memory 1 to be tested during the test;
[0052] The stress test of the double rate synchronous dynamic random access memory 1 under test is implemented by the startup program and memory test software pre-stored in the U disk 6.
[0053] Figure 1 The reference numeral 4 denotes a CPU, 7 denotes an input device, and 8 denotes a display.
[0054] Furthermore, a heat flow meter 10 is used to independently control the temperature of the tested double rate synchronous dynamic random access memory 1, and quickly switch to a specified temperature within 10 seconds.
[0055] Furthermore, the memory particle test fixture 2 is provided with memory particle interface sockets of different generations of memory such as DDR1, DDR2, DDR3, DDR4 and DDR5, which are used for crimping the memory particles under test. The memory particle test fixture 2 can withstand an ambient temperature of -55°C to +125°C for a long time.
[0056] Furthermore, the double rate synchronous dynamic random access memory 1 under test can be replaced by the memory particle test fixture 2 for performance screening and stress evaluation.
[0057] Furthermore, the memory chip interface socket and the computer mainboard are replaced according to the type of the double rate synchronous dynamic random access memory (1) to be tested, and the memory test software pre-stored in the USB flash drive is updated.
[0058] Furthermore, the stress testing device has a basic function test mode, a stress test mode, a consistency test mode and a deep error detection mode.
[0059] Furthermore, the basic function test mode is used to verify the data read and write capability and rate of the double rate synchronous dynamic random access memory under test, and the specific implementation steps are as follows:
[0060] (a) Install the memory under test into the memory particle test fixture of the test device, set the initial parameters in the memory test software configuration interface, including memory specifications, voltage, and frequency; and select the data width during the test;
[0061] (b) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature;
[0062] (c) Run the test software and record the read and write speed and bit error rate of the memory under test.
[0063] Furthermore, the stress test mode is used to check the stability of the tested double rate synchronous dynamic random access memory under high load operating conditions, and the specific implementation steps are as follows:
[0064] (a) Install the memory under test into the memory chip test fixture of the test device, set the initial parameters in the memory test software configuration interface, including memory specifications, voltage, frequency, and the timing configuration is the highest performance mode;
[0065] (b) Select the corresponding test program according to the memory capacity to simulate the real high load condition;
[0066] (c) Set the stress test running time and abnormal stop conditions;
[0067] (d) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature;
[0068] (e) Initiate the test and record the test results.
[0069] Furthermore, the consistency test mode is used to ensure the timing consistency of the memory read and write interface and test the correctness of the data after multiple reads and writes. The specific implementation is as follows:
[0070] (a) Install the memory under test into the memory chip test fixture of the test device, and set the initial parameters in the memory test software configuration interface, including memory specifications, voltage, frequency, and timing parameters;
[0071] (b) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature;
[0072] (c) Start the consistency test, send the specified data to the memory under test, continuously read and compare the written data, and monitor the data transmission between the test equipment and the memory under test in real time;
[0073] (d) Record the test cycle, test parameter settings and all errors and exception information.
[0074] Furthermore, a deep error detection mode is used to detect multiple error types, including overlay address conflicts, burst errors, and decoding errors;
[0075] The specific implementation is:
[0076] (a) Install the memory under test into the memory chip test fixture of the test device, and set the initial parameters in the memory test software configuration interface, including memory specifications, voltage, frequency, and timing parameters;
[0077] (b) Determine the test patterns according to the test requirements, including walking 0 / 1, March, moving reversal, address complement, and RowHammer;
[0078] (c) Setting the number of processors, cache size, and number of loops used for testing;
[0079] (d) Start the test and record the test results and the addresses and data of errors reported during the test.
[0080] In a second aspect, the present invention further provides a stress testing method, comprising the following steps:
[0081] (1) Establish and prepare the test environment;
[0082] Define the test objectives, clarify the model specifications, system specifications and package size of the tested double-rate synchronous dynamic random access memory, and design the interface sockets on the memory particle test fixture; modify the test software configuration data in a targeted manner according to the memory model specifications, system specification information and test requirements to meet the timing parameter requirements of the DDR memory after power-on; control the test environment temperature through a heat flow meter to achieve the purpose of testing at different temperature points;
[0083] (2) Test environment configuration and initialization;
[0084] Install the test program into a USB flash drive and make the USB flash drive a boot disk. The computer system will enter the test interface by default when it is turned on. Set the test level, frequency and timing parameters before starting the test to ensure that the tested double-rate synchronous dynamic random access memory can start normally.
[0085] (3) Test program execution;
[0086] Enter the memory test software graphical user interface, select the test mode, and set the operation mode and number of cycles; the operation mode includes the number of processor cores and whether to enable high-speed cache;
[0087] Start the test program and perform automated testing according to the selected test mode;
[0088] (4) Monitor and record test dynamics, including test progress, ongoing test items, and detected anomalies; record deviations and failure points that occur during testing, including error classification, frequency of occurrence, and corresponding addresses.
[0089] Preferably, the memory test software in the present invention can be implemented using a variety of common software, such as Memtester, Memtester86, and the like.
[0090] Example:
[0091] The present invention proposes a pressure test device for aerospace double rate synchronous dynamic random access memory, which adopts a general computer mainboard, has low cost and mature technology; adopts a heat flow meter to independently control the temperature of the tested DDR, and can quickly switch to a specified temperature within 10 seconds; the tested DDR can be replaced in a special memory particle test fixture for performance screening and pressure evaluation; an external U disk is used to pre-store a startup program and test software, which simplifies software configuration and installation; the architecture of the performance evaluation device is universal, and the test fixture of the memory particles and the computer mainboard can be replaced according to the type of the tested DDR, and the test software pre-stored in the U disk is updated.
[0092] The components of the aerospace microprocessor performance evaluation device are as follows: 1. Double rate synchronous dynamic random access memory; 2. Memory particle test fixture; 3. Standard memory interface; 4. CPU; 5. Computer motherboard; 6. U disk; 7. Keyboard, mouse; 8. Display; 9. Heat flow cover; 10. Heat flow instrument; 11. Heat flow conduit. The functions of each part are described as follows:
[0093] (1) Double rate synchronous dynamic random access memory: device under test.
[0094] (2) Memory chip test fixture: A standard memory interface fixture customized according to the characteristics of different generations of memory such as DDR1, DDR2, DDR3, and DDR4. A non-destructive test socket with good contact function is installed on the memory stick substrate to crimp the DDR under test. It can withstand the military temperature range of -55°C to +125°C for a long time.
[0095] (3) Standard memory interface: The standard interface on the computer motherboard used to plug in memory sticks, usually the DIMM interface.
[0096] (4)CPU: The central processing unit on the computer motherboard.
[0097] (5) Computer motherboard: A commercially available motherboard that is designed to form a computer system for a specified CPU, usually including a CPU socket, CPU peripherals, memory interfaces, and various standard input and output interfaces.
[0098] (6) USB flash drive: A flash memory that is connected to the computer motherboard via the USB interface.
[0099] (7) Keyboard and mouse: input devices of the computer motherboard.
[0100] (8) Monitor: The display output device of the computer motherboard.
[0101] (9) Heat flow hood: A temperature environment chamber used with a heat flow meter to provide a specified temperature environment for the memory chip test fixture.
[0102] (10) Heat flow meter: A temperature control device capable of outputting air flow at a specified temperature.
[0103] (11) Heat flow conduit: A conduit that conducts the air flow of specified temperature from the heat flow meter to the heat flow hood.
[0104] The pressure testing device of the present invention has high-precision and high-sensitivity detection capabilities; has multiple test modes such as basic functions and deep error detection; has an operating environment independent of the operating system; has flexible and configurable test parameters to meet customization and scalability requirements; has a clear, easy-to-understand and interpret result display; has security and fault-tolerant mechanisms; has fast and accurate ambient temperature adjustment capabilities, and can complete performance evaluation at specific temperatures; has fast and easy hardware deployment and test software configuration and installation.
[0105] The pressure testing device of the present invention has high-precision and high-sensitivity detection capabilities, can identify and detect extremely subtle read and write errors, bit flips, data verification failures and other faults, and can evaluate the manufacturing defects and hardware aging of double-rate synchronous dynamic random access memory for aerospace use.
[0106] The stress test device of the present invention has multiple test modes such as basic functions and deep error detection. The test device provides basic function test, stress test, consistency test and deep error detection capabilities. The basic function test verifies the data read and write capabilities and rate of the memory unit, the stress test checks the stability of the memory under high-load operating conditions, the consistency test ensures the accuracy of the data after multiple reads and writes, and the deep error detection executes complex algorithms to cover multiple error types such as address conflicts, burst errors, decoding errors, etc. It ensures that hardware problems that affect memory performance are fully covered.
[0107] The pressure testing device of the present invention has flexible and configurable test parameters to meet customization and scalability requirements. The device allows users to select or customize detailed parameters, such as test mode, test time, number of cycles, power management, etc., to meet different application scenarios and test purposes.
[0108] The pressure testing device of the present invention displays results that are easy to understand and interpret. The device not only designs a good graphical interface, but also specifies a detailed test report format. After the test is completed, the device can automatically generate a test report including a test overview, error log, statistical charts, etc., to help testers quickly locate problems.
[0109] The pressure testing device of the present invention has safety protection and fault tolerance mechanisms. The device has built-in safety protection mechanisms, such as overheating protection, voltage regulation and other circuits. For problems such as overheating, voltage anomalies and irrecoverable errors encountered during the test, the device will immediately stop the test and prompt the user to prevent permanent damage to the hardware.
[0110] The pressure testing device of the present invention has the ability to quickly and accurately adjust the ambient temperature. It uses a heat flow meter to independently control the temperature of the memory under test and can quickly switch to the specified temperature within 10 seconds. A special test fixture is installed on the evaluation board, and the memory under test can be replaced for performance screening.
[0111] The pressure test device and test fixture of the present invention are designed as modular products and connected through computer standard interfaces, so that the device architecture and components have good versatility. The memory test software is independent of the operating system, and the configuration and use do not require the intervention of the operating system, which can avoid interference from the operating system resource management mechanism and directly access the underlying hardware.
[0112] The contents not described in detail in the specification of the present invention belong to the common knowledge of those skilled in the art.
Claims
1. A pressure test device for aerospace double rate synchronous dynamic random access memory, characterized in that: include: A memory particle test fixture (2), a standard memory interface (3), a computer motherboard (5), a USB flash drive (6), a heat flow cover (9), a heat flow meter (10) and a heat flow conduit (11); The double rate synchronous dynamic random access memory (1) to be tested is installed on a memory particle test fixture (2) according to a corresponding interface, and is installed in a standard memory interface (3) on a computer motherboard (5) through the memory particle test fixture (2); a heat flow cover (9) is installed on the memory particle test fixture (2) to form a cavity, and a heat flow meter (10) conducts high-temperature or low-temperature airflow through a heat flow conduit (11) to control the ambient temperature of the double rate synchronous dynamic random access memory (1) to be tested during testing; The stress test of the double-rate synchronous dynamic random access memory (1) to be tested is implemented by using a startup program and test software pre-stored in a U disk (6).
2. A pressure test device for aerospace double rate synchronous dynamic random access memory according to claim 1, characterized in that: A heat flow meter (10) is used to independently control the temperature of the double rate synchronous dynamic random access memory (1) under test, and the temperature is quickly switched to a specified temperature within 10 seconds.
3. The pressure test device for double rate synchronous dynamic random access memory for aerospace use according to claim 1, characterized in that: The memory particle test fixture (2) is provided with memory particle interface sockets of different generations of memory such as DDR1, DDR2, DDR3, DDR4 and DDR5, which are used for crimping the memory particles to be tested. The memory particle test fixture (2) can tolerate an ambient temperature of -55°C to +125°C for a long period of time.
4. A pressure test device for aerospace double rate synchronous dynamic random access memory according to claim 3, characterized in that: The double rate synchronous dynamic random access memory (1) to be tested can be replaced by a memory particle test fixture (2) for performance screening and stress evaluation.
5. The pressure test device for double rate synchronous dynamic random access memory for aerospace use according to claim 3, characterized in that: The memory chip interface socket and the computer mainboard are replaced according to the type of the double rate synchronous dynamic random access memory (1) to be tested, and the test software pre-stored in the U disk is updated.
6. A pressure test device for aerospace double rate synchronous dynamic random access memory according to any one of claims 1 to 5, characterized in that: The stress test device has a basic function test mode, a stress test mode, a consistency test mode and a deep error detection mode.
7. A pressure test device for aerospace double rate synchronous dynamic random access memory according to claim 6, characterized in that: The basic function test mode is used to verify the data read and write capability and rate of the double rate synchronous dynamic random access memory (1) under test. The specific implementation steps are as follows: (a) installing the memory to be tested (1) into the memory particle test fixture (2) of the test device, setting the initial parameters in the test software configuration interface, including the memory specification, voltage, and frequency; and selecting the data width during the test; (b) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature; (c) Run the test software and record the read and write speed and bit error rate of the memory under test.
8. The pressure test device for double rate synchronous dynamic random access memory for aerospace use according to claim 6, characterized in that: The stress test mode is used to check the stability of the tested double rate synchronous dynamic random access memory (1) under high load operation conditions. The specific implementation steps are as follows: (a) Install the memory under test into the memory chip test fixture of the test device, set the initial parameters in the test software configuration interface, including memory specifications, voltage, frequency, and the timing configuration is the highest performance mode; (b) Select the corresponding test program according to the memory capacity to simulate the real high load condition; (c) Set the stress test running time and abnormal stop conditions; (d) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature; (e) Initiate the test and record the test results.
9. The pressure test device for double rate synchronous dynamic random access memory for aerospace use according to claim 6, characterized in that: The consistency test mode is used to ensure the timing consistency of the memory read and write interface and test the correctness of the data after multiple reads and writes. The specific implementation is as follows: (a) Install the memory under test into the memory chip test fixture of the test device, and set the initial parameters in the test software configuration interface, including memory specifications, voltage, frequency, and timing parameters; (b) Set the ambient temperature in the heat flow instrument control software, start the heat flow instrument, and make the heat flow hood reach the specified test ambient temperature; (c) Start the consistency test, send the specified data to the memory under test, continuously read and compare the written data, and monitor the data transmission between the test equipment and the memory under test in real time; (d) Record the test cycle, test parameter settings and all errors and exception information.
10. The pressure test device for double rate synchronous dynamic random access memory for aerospace use according to claim 6, characterized in that: Deep error detection mode is used to detect multiple error types, including overlay address conflicts, burst errors, and decoding errors; The specific implementation is: (a) Install the memory under test into the memory chip test fixture of the test device, and set the initial parameters in the test software configuration interface, including memory specifications, voltage, frequency, and timing parameters; (b) Determine the test patterns according to the test requirements, including walking 0 / 1, March, moving reversal, address complement, and RowHammer; (c) Setting the number of processors, cache size, and number of loops used for testing; (d) Start the test and record the test results and the addresses and data of errors reported during the test.
11. A pressure testing method based on the pressure testing device for aerospace double rate synchronous dynamic random access memory according to claim 6, characterized in that include: (1) Establish and prepare the test environment; Define the test objectives, clarify the model specifications, system specifications and package size of the tested double-rate synchronous dynamic random access memory, and design the interface socket on the memory particle test fixture; Modify the test software configuration data in a targeted manner according to the memory model specifications, system specification information and test requirements to meet the timing parameter requirements of the DDR memory after power-on; control the test environment temperature through a heat flow meter to achieve the purpose of testing at different temperature points; (2) Test environment configuration and initialization; Install the test program into a USB flash drive and make the USB flash drive a boot disk. The computer system will enter the test interface by default when it is turned on. Set the test level, frequency and timing parameters before starting the test to ensure that the tested double-rate synchronous dynamic random access memory can start normally. (3) Test program execution; Enter the memory test software graphical user interface, select the test mode, and set the operation mode and number of cycles; the operation mode includes the number of processor cores and whether to enable high-speed cache; Start the test program and perform automated testing according to the selected test mode; (4) Monitor and record test dynamics, including test progress, ongoing test items, and detected anomalies; Keep records of deviations and failure points that occur during testing, including error classification, frequency of occurrence, and corresponding addresses.