Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component. The multilayer electronic component includes: a main body including a capacitance forming portion including dielectric layers and internal electrodes alternately arranged in a first direction, and cover portions disposed on two opposite surfaces of the capacitance forming portion in the first direction; and an outer electrode disposed on an outer surface of the main body and connected to the inner electrode, in which the cover portion includes a first dielectric material having a perovskite structure represented by the chemical formula ABO3 and a first metal including one or more of Cu, W, Ag, and Zn, and in which the first dielectric material has a perovskite structure represented by the chemical formula ABO3, the first metal includes a first dielectric material having a perovskite structure represented by the chemical formula ABO3, and the first dielectric material has a perovskite structure represented by the chemical formula ABO3, and the first metal includes one or more of Cu, W, Ag, and Zn. The amount of the first metal is 2.0 moles or more and 9.0 moles or less based on 100 moles of the element B in at least a part of the covering part.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0110629 filed in the Korean Intellectual Property Office on August 23, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a multi-layer electronic assembly. Background Art

[0003] A multilayer ceramic capacitor (MLCC, a type of multilayer electronic component) may be a chip capacitor mounted on a printed circuit board of various electronic products (such as an image display device including a liquid crystal display (LCD) or a plasma display panel (PDP), a computer, a smart phone, or a mobile phone) and used to charge or discharge therefrom.

[0004] Recently, with the expansion of the electric vehicle market, the use of high-temperature and high-voltage multilayer ceramic capacitors with an operating voltage of 250V or higher in circuits such as automotive high-voltage battery chargers (OBCs), DC / DC (direct current / direct current) converters, etc. is expanding.

[0005] Under the above-mentioned high temperature and high pressure environment, due to the dielectric loss of the multilayer ceramic capacitor and the metal resistance included in the inner and outer electrodes, the auto heat dissipation phenomenon may occur. Since this heat dissipation phenomenon accelerates the degradation of the dielectric layer and shortens the life of the multilayer ceramic capacitor, it is necessary to study the improvement of the heat dissipation of the multilayer ceramic capacitor. Summary of the invention

[0006] An aspect of the present disclosure is to effectively dissipate heat generated in a multi-layer electronic assembly to improve the reliability of the multi-layer electronic assembly.

[0007] However, the purpose of the present disclosure is not limited to the above contents and will be more easily understood in the process of describing specific embodiments of the present disclosure.

[0008] According to one aspect of the present disclosure, a multilayer electronic component includes: a main body, including a capacitor forming portion and a covering portion, the capacitor forming portion including dielectric layers and internal electrodes alternately arranged in a first direction, the covering portion being arranged on two surfaces of the capacitor forming portion opposite to each other in the first direction; and an external electrode, arranged on an outer surface of the main body and connected to the internal electrode, wherein the covering portion includes a first dielectric material and a first metal, the first dielectric material having a perovskite structure represented by a chemical formula ABO3, the first metal including one or more of Cu, W, Ag and Zn, and wherein, in at least a portion of the covering portion, based on 100 moles of the B element, the amount of the first metal is greater than or equal to 2.0 moles and less than or equal to 9.0 moles. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which:

[0010] Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an embodiment of the present disclosure.

[0011] Figure 2 It is schematically shown Figure 1 A cross-sectional view of a cross section of a multilayer electronic component taken along line II'.

[0012] Figure 3 It is schematically shown Figure 1 sectional view of a cross section of a multilayer electronic component taken along line II-II'.

[0013] Figure 4 is an exploded perspective view schematically showing a main body of a multilayer electronic component according to an embodiment of the present disclosure.

[0014] Figure 5 yes Figure 2 An enlarged view of part K1.

[0015] Figure 6 is a diagram schematically illustrating a method for evaluating heat dissipation of a multi-layer electronic component. DETAILED DESCRIPTION

[0016] Hereinafter, embodiments of the present disclosure will be described with reference to specific example embodiments and the accompanying drawings. However, embodiments of the present disclosure may be illustrated in many different forms and should not be construed as being limited to the specific embodiments set forth herein. The example embodiments disclosed herein are provided to better explain the present disclosure to those skilled in the art. In the accompanying drawings, for clarity, the shapes and sizes of the elements may be exaggerated, and the same reference numerals will always be used to represent the same or similar elements.

[0017] In addition, in order to clearly describe the present disclosure in the drawings, contents irrelevant to the description are omitted, and since the size and thickness of each component shown in the drawings are arbitrarily shown for the convenience of description, the present disclosure is not limited thereto. In addition, the same reference numerals are used to describe components having the same functions within the scope of the same concept. Throughout the specification, unless otherwise specified, when a part "includes" or "contains" a component, this means that other components are not excluded and other components may be further included.

[0018] In the drawings, a first direction may be defined as a thickness direction, a second direction may be defined as a length direction, and a third direction may be defined as a width direction.

[0019] Multilayer electronic components

[0020] Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an embodiment of the present disclosure.

[0021] Figure 2 It is schematically shown Figure 1 A cross-sectional view of a cross section of a multilayer electronic component taken along line II'.

[0022] Figure 3 It is schematically shown Figure 1 sectional view of a cross section of a multilayer electronic component taken along line II-II'.

[0023] Figure 4 is an exploded perspective view schematically showing a main body of a multilayer electronic component according to an embodiment of the present disclosure.

[0024] Figure 5 yes Figure 2 An enlarged view of part K1.

[0025] In the following, reference will be made to Figures 1 to 5 A multilayer electronic component 100 according to an embodiment of the present disclosure is described. In addition, a multilayer ceramic capacitor (hereinafter referred to as "MLCC") will be described as an example of a multilayer electronic component, but the present disclosure is not limited thereto, and the multilayer electronic component also includes components such as inductors, piezoelectric elements, varistors, thermistors, etc.

[0026] The multilayer electronic component 100 according to some embodiments of the present disclosure may include a body 110 including a capacitance forming part Ac including a dielectric layer 111 and internal electrodes 121 and 122 and cover parts 112 and 113 ; and external electrodes 131 and 132 .

[0027] Although the specific shape of the body 110 is not particularly limited, as shown in the figure, the body 110 may have a hexahedral shape or a shape similar to the hexahedral shape. Due to shrinkage of the ceramic powder included in the body 110 during the sintering process or polishing of the corners, the body 110 may not have a hexahedral shape with perfect straight lines, but may generally have a hexahedral shape.

[0028] The body 110 may have a first surface 1 and a second surface 2 opposite to each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and opposite to each other in the second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and opposite to each other in a third direction.

[0029] The body 110 may include a capacitance forming part Ac including dielectric layers 111 and internal electrodes 121 and 122 alternately arranged in a first direction, and cover parts 112 and 113 disposed on two surfaces of the capacitance forming part Ac that are opposite in the first direction.

[0030] The capacitance forming part Ac may be disposed inside the body 110, and may include first and second internal electrodes 121 and 122, which are alternately disposed, and the dielectric layer 111 is interposed between the first and second internal electrodes 121 and 122, to form a capacitance of the multilayer electronic component 100. The covering parts 112 and 113 may include the first and second covering parts 112 and 113, respectively disposed on two surfaces of the capacitance forming part Ac that are opposite in the first direction. The covering parts 112 and 113 may be substantially used to prevent damage to the capacitance forming part Ac due to physical stress or chemical stress.

[0031] According to some embodiments of the present disclosure, the covering portions 112 and 113 may include a first dielectric material and a first metal, the first dielectric material having a perovskite structure represented by a chemical formula ABO3. For example, the A element may include Ca, and the B element may include Zr. For example, the first dielectric material may include (Ca 1-x Sr x )(Zr 1-y Ti y )O3, wherein x satisfies 0≤x≤0.5, and y satisfies 0≤y≤0.5. A detailed description of the first dielectric material will be provided later.

[0032] As described above, a self-heat dissipation phenomenon of the multilayer electronic component 100 may occur under a high temperature and high pressure environment, and this heat dissipation phenomenon may accelerate the degradation of the dielectric layer 111 and may shorten the life of the multilayer electronic component 100. The heat generated in the multilayer electronic component 100 may be discharged to the outside of the multilayer electronic component 100 through the inner electrodes 121 and 122 and the outer electrodes 131 and 132, and the thermal conductivity of the inner electrodes 121 and 122 and the outer electrodes 131 and 132 including metal as a main component is relatively higher than the thermal conductivity of the dielectric layer 111 including the first dielectric material as a main component and the covers 112 and 113. Since the area of ​​the outer surface of the multilayer electronic component 100 occupied by the covers 112 and 113 may be large, it is necessary to accelerate the heat dissipation through the covers 112 and 113.

[0033] Therefore, in some embodiments of the present disclosure, since the covering portions 112 and 113 constituting a portion of the outer surface of the multilayer electronic component 100 may include the first metal, the heat generated in the multilayer electronic component 100 can also be dissipated through the covering portions 112 and 113, thereby improving the reliability of the multilayer electronic component 100.

[0034] For example, the first metal may include one or more of Cu, W, Ag, and Zn. Cu, W, Ag, and Zn may be metal elements having excellent thermal conductivity among metal elements, and thus may effectively dissipate heat generated in the multilayer electronic component 100. More preferably, the first metal may include Cu. Cu has a thermal conductivity of about 397 W / (m·K) at 20° C., is the second highest element in thermal conductivity among metal elements, and may also be inexpensive, and thus the first metal may include Cu.

[0035] However, since the first metal may be a conductive material, as the amount of the first metal included in the covers 112 and 113 increases, the insulation of the covers 112 and 113 may decrease, and as a result, the insulation resistance of the multilayer electronic component 100 may decrease or the moisture resistance reliability may decrease.

[0036] Therefore, in some embodiments of the present disclosure, it is preferred that in at least a portion of the covering portions 112 and 113, the amount of the first metal may be greater than or equal to 2.0 moles and less than or equal to 9.0 moles based on 100 moles of the B element. According to some embodiments, in at least a portion of the covering portions 112 and 113, the amount of the first metal may be greater than or equal to 2.0 moles and less than or equal to 6.0 moles based on 100 moles of the B element. In at least a portion of the covering portions 112 and 113, when the amount of the first metal is less than 2.0 moles based on 100 moles of the B element, the heat dissipation effect of the present disclosure may be insufficient, and when the amount of the first metal exceeds 9.0 moles based on 100 moles of the B element, the insulation resistance of the multilayer electronic component 100 may be reduced, or the moisture resistance reliability of the multilayer electronic component 100 may be reduced.

[0037] The method of measuring the amount of the first metal included in the covering portions 112 and 113 may not need to be particularly limited. For example, after obtaining an image of a cross section in the first direction and the second direction cut from the center of the main body 110 in the third direction using a scanning electron microscope (SEM), the amount (at%) of the B element and the amount (at%) of the first metal may be measured for a random area in the covering portions 112 and 113 by energy dispersive spectroscopy (EDS), and by doing so, the amount of the first metal based on 100 moles of the B element may be determined. In addition, the amount of the first metal included in the covering portions 112 and 113 may also mean: an average value obtained by measuring the number of moles of the first metal based on 100 moles of the B element at 10 or more equally spaced points in the first direction and averaging the measured number of moles. For example, the average amount of the first metal included in the covering portions 112 and 113 (based on 100 moles of the B element) may be greater than or equal to 2.0 moles and less than or equal to 9.0 moles. In addition, the amount of the first metal included in the covering portions 112 and 113 may be determined using a measurement method commonly used in the art.

[0038] In some embodiments, the standard deviation of the amount of the first metal measured along the first direction in the covers 112 and 113 may be 3.0 mol or less based on 100 mol of the B element. For example, the amount of the first metal in the covers 112 and 113 may be relatively uniform in the first direction. In order to effectively dissipate the heat generated in the capacitance forming portion Ac through the outer surfaces of the covers 112 and 113, it is desirable that the first metal having high thermal conductivity is uniformly distributed in the first direction.

[0039] An example of a method for obtaining the standard deviation of the amount of the first metal measured in the first direction in the covering parts 112 and 113 will be described. For example, after obtaining an image of a cross section in the first direction and the second direction cut from the center of the main body 110 in the third direction using a scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) can be used to analyze at 10 or more equally spaced points, 20 or more equally spaced points, or 30 or more equally spaced points in the first direction in the covering parts 112 and 113. In this case, the amount (at%) of the B element and the amount (at%) of the first metal at each point can be measured, and thus, the number of moles of the first metal based on 100 moles of the B element at each point can be obtained. The standard deviation of the amount of the first metal can be obtained by calculating the variance of the number of moles of the first metal measured at each point and then taking the square root of the variance.

[0040] Reference Figure 5 , the first dielectric material may include a plurality of dielectric grains G and grain boundaries GB disposed between adjacent dielectric grains. In this case, at least a portion of the first metal may be included in the plurality of dielectric grains G. For example, by replacing the A element or the B element of the first dielectric material, Cu, W, Ag, Zn, etc. may be included in the dielectric grains G.

[0041] However, the present disclosure is not limited thereto, and when the amount of the first metal increases and the first metal is excessively included in the dielectric grains G, at least a portion of the first metal may exist at the grain boundaries GB.

[0042] There is no need to specifically limit the thickness of the covering portions 112 and 113. In order to miniaturize the multilayer electronic component and increase the capacitance of the multilayer electronic component, the average thickness tc of the covering portions 112 and 113 may be 600 μm or less, 400 μm or less, 200 μm or less, 100 μm or less, or 20 μm or less. For example, the average thickness tc of the covering portions 112 and 113 may be 5 μm or more, 20 μm or more, 100 μm or more, 200 μm or more, or 500 μm or more, but the present disclosure is not limited thereto. In this case, the average thickness of the covering portions 112 and 113 refers to the average thickness of the first covering portion 112 and the average thickness of the second covering portion 113, respectively.

[0043] The average thickness tc of the covering portions 112 and 113 may refer to the average size of the covering portions 112 and 113 in the first direction, and may be the average value of the size of the covering portions in the first direction measured at five equally spaced points in the second direction in an image observed from a cross-section in the first and second directions cut from the center of the main body 110 in the third direction using a scanning electron microscope (SEM).

[0044] The capacitance forming part Ac of the body 110 may include alternately stacked dielectric layers 111 and internal electrodes 121 and 122. The plurality of dielectric layers 111 forming the body 110 may be in a sintered state, and adjacent dielectric layers 111 may be integrated to the extent that it is difficult to distinguish the boundaries between adjacent dielectric layers 111 without using a scanning electron microscope (SEM).

[0045] The dielectric layer 111 may include a first dielectric material. For example, the A element may include Ca, and the B element may include Zr. For example, the first dielectric material included in the dielectric layer 111 may include, for example, (Ca 1-x Sr x )(Zr 1-y Ti y )O3, wherein x satisfies 0≤x≤0.5, and y satisfies 0≤y≤0.5. The dielectric layer 111 may include the first dielectric material as a main component. The B element may not be the first metal.

[0046] When a ferroelectric material such as barium carbonate (BaTiO 3 ) is used as a dielectric material applied to the dielectric layer 111 , the dielectric layer 111 has a high dielectric constant at room temperature, but problems of generating piezoelectric cracks or reducing capacitance may occur in a high temperature and high pressure environment.

[0047] The CaZrO3-based perovskite compound as a paraelectric material may have the characteristics of small dielectric constant change caused by temperature change and small dielectric loss. For example, by using the CaZrO3-based perovskite compound as the first dielectric material included in the dielectric layer 111, the temperature change rate of capacitance and the dielectric loss can be reduced, thereby ensuring the high temperature reliability of the multilayer electronic component. For example, when the cover portions 112 and 113 include the first metal and the dielectric layer 111 includes the first dielectric material, the multilayer electronic component 100 can obtain excellent heat dissipation characteristics and electrical characteristics under high temperature and high pressure.

[0048] The dielectric layer 111 may include other minor components. For example, the dielectric layer 111 may include a first minor component, and the first minor component includes one or more of Mn, V, Cr, Fe, Ni, and Co. For example, the dielectric layer 111 may include a first minor component including Mn, and the first minor component may be Mn. The first minor component may be used to provide reduction resistance, improve the densification of the microstructure, and maintain high temperature life.

[0049] The amount of the first subcomponent does not need to be particularly limited, but the amount of the first subcomponent may be greater than or equal to 0.1 mol and less than or equal to 2.0 mol based on 100 mol of the B element in at least a portion of the dielectric layer 111. When the amount of the first subcomponent is less than 0.1 mol based on 100 mol of the B element, reduction resistance and reliability may be reduced, and when the amount of the first subcomponent is greater than 2.0 mol based on 100 mol of the B element, side effects such as increased sintering temperature and reduced high temperature withstand voltage may occur.

[0050] The dielectric layer 111 may include a second secondary component, for example, the second secondary component includes one or more of Y, Dy, Ho, La, Ce, Nd, Sm, Gd, Er, and Zr. For example, the dielectric layer 111 may include a second secondary component including Y, and the second secondary component may be Y. The second secondary component may play a role in improving reliability by controlling grain growth and making the distribution of dielectric grains uniform.

[0051] The amount of the second subcomponent does not need to be particularly limited, but may be greater than or equal to 0.1 mol and less than or equal to 2.0 mol based on 100 mol of the B element in at least a portion of the dielectric layer 111 .

[0052] For example, the dielectric layer 111 may include a third subcomponent including Si. The third subcomponent may function to reduce the sintering temperature to improve the sintering performance.

[0053] The amount of the third subcomponent does not need to be particularly limited, but the amount of the third subcomponent may be greater than or equal to 0.1 mol and less than or equal to 2.0 mol based on 100 mol of the B element in at least a portion of the dielectric layer 111. When the amount of the third subcomponent is less than 0.1 mol based on 100 mol of the B element, the density of the dielectric layer may be reduced, and when the amount of the third subcomponent is greater than 2.0 mol based on 100 mol of the B element, the withstand voltage characteristics may be reduced due to the appearance of the second phase.

[0054] Preferably, the covering parts 112 and 113 also include the first to third subcomponents. In addition, in at least a portion of the covering parts 112 and 113, the amount of the first subcomponent based on 100 mol of the B element may be greater than or equal to 0.1 mol and less than or equal to 2.0 mol, the amount of the second subcomponent based on 100 mol of the B element may be greater than or equal to 0.1 mol and less than or equal to 2.0 mol, and the amount of the third subcomponent based on 100 mol of the B element may be greater than or equal to 0.1 mol and less than or equal to 2.0 mol.

[0055] In some embodiments, the dielectric layer 111 may not include the first metal. The first metal included in the cover parts 112 and 113 may improve the heat dissipation characteristics of the multilayer electronic component 100 without significantly affecting the electrical characteristics of the multilayer electronic component 100. When the dielectric layer 111 includes the first metal, which may be a conductor, the insulation resistance of the multilayer electronic component 100 may be reduced, or a short circuit defect, etc. may be caused.

[0056] Therefore, when the dielectric layer 111 includes the first metal, the concentration of the first metal included in the dielectric layer 111 may be lower than the concentration of the first metal included in the capping parts 112 and 113 .

[0057] The internal electrodes 121 and 122 may be alternately arranged with the dielectric layer 111. For example, the first and second internal electrodes 121 and 122, which may be a pair of electrodes having different polarities, may be arranged to face each other with the dielectric layer 111 interposed therebetween. The first and second internal electrodes 121 and 122 may be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0058] The first internal electrode 121 may be disposed to be spaced apart from the fourth surface 4 , and may extend toward the third surface 3 . The second internal electrode 122 may be disposed to be spaced apart from the third surface 3 , and may extend toward the fourth surface 4 .

[0059] The conductive metal included in the internal electrodes 121 and 122 does not need to be particularly limited, but may include, for example, one or more of Ni, Cu, Pd, Ag, Au, Pt, Sn, W, Ti, and alloys thereof.

[0060] For example, the inner electrodes 121 and 122 may include Ni as a main component. In this case, the main component means a component of 50at% or more of the components constituting the inner electrodes 121 and 122. When the dielectric layer 111 includes a CaZrO3-based compound as a main component and the inner electrodes 121 and 122 include Ni as a main component, and the dielectric layer 111 and the inner electrodes 121 and 122 are sintered at the same time, the CaZrO3-based compound may be reduced, thereby deteriorating the dielectric characteristics. Therefore, in some embodiments, the inner electrodes 121 and 122 may include Cu as a main component, which has better oxidation resistance than Ni. When the inner electrodes 121 and 122 include Cu as a main component, the reduction of the CaZrO3-based compound can be easily prevented.

[0061] The average thickness td of the dielectric layer 111 does not need to be particularly limited, but may be, for example, greater than or equal to 1.0 μm and less than or equal to 50.0 μm. The average thickness te of the internal electrodes 121 and 122 does not need to be particularly limited, but may be, for example, greater than or equal to 0.5 μm and less than or equal to 3.0 μm. In some embodiments, the average thickness td of the dielectric layer 111 may be greater than twice the average thickness of the internal electrodes 121 and 122. For example, td>2×te may be satisfied. In electronic components for high-voltage electrical / electronic devices, the breakdown voltage characteristics may be improved by making the average thickness of the dielectric layer 111 greater than twice the average thickness of the internal electrodes 121 and 122 to prevent a decrease in the breakdown voltage under a high voltage environment.

[0062] The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 respectively mean the size of the dielectric layer 111 in the first direction and the size of the internal electrodes 121 and 122 in the first direction. The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be determined by scanning the cross section of the body 110 in the first direction and the second direction at a magnification of 10000 using a scanning electron microscope (SEM). More specifically, the average thickness td of the dielectric layer 111 can be determined by measuring the thickness at multiple points (e.g., 30 equally spaced points in the second direction) of one dielectric layer 111 to obtain their average value. In addition, the average thickness te of the internal electrodes 121 and 122 can be determined by measuring the thickness at multiple points (e.g., 30 equally spaced points in the second direction) of one internal electrode 121 or 122 to obtain their average value. 30 equally spaced points can be specified in the capacitance forming portion Ac. When such an average value measurement is performed for each of the ten dielectric layers 111 and the ten internal electrodes 121 and 122 and then the average value is determined, the average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 may be further generalized.

[0063] The body 110 may include a first edge portion 114 and a second edge portion 115, which are respectively disposed on two surfaces of the capacitance forming portion Ac that are opposite in the third direction. For example, the edge portions 114 and 115 may refer to regions between both ends of the internal electrodes 121 and 122 and the outer surface of the body 110 in a cross section of the body 110 in the first direction and the third direction.

[0064] The edge portions 114 and 115 may include the same material as that of the dielectric layer 111, except that the edge portions 114 and 115 do not include the internal electrodes 121 and 122. In some embodiments, the edge portions 114 and 115 may not include the first metal. The edge portions 114 and 115 may have a greater influence on the dielectric layer 111 and the internal electrodes 121 and 122 than the cover portions 112 and 113. Therefore, when the edge portions 114 and 115 include the first metal, which may be a conductor, the insulation resistance of the multilayer electronic component 100 may be reduced, or a short circuit defect or the like may be caused. When the edge portions 114 and 115 include the first metal, the concentration of the first metal included in the edge portions 114 and 115 may be lower than the concentration of the first metal included in the cover portions 112 and 113.

[0065] The edge portions 114 and 115 may be formed by coating a conductive paste on an area of ​​the ceramic green sheet other than an area where the edge portions are formed and sintering. Alternatively, in order to suppress the step difference, after stacking, cutting may be performed so that the internal electrodes 121 and 122 are exposed to two surfaces of the capacitor forming portion Ac opposite to each other in the third direction, and then a single dielectric layer or two or more dielectric layers may be stacked on two surfaces of the capacitor forming portion Ac opposite to each other in the third direction to form the edge portions 114 and 115.

[0066] The average thickness tm of the edge portions 114 and 115 may not be specifically limited. However, in order to miniaturize the multilayer electronic component and increase the capacitance of the multilayer electronic component, the average thickness tm of the edge portions 114 and 115 may be 500 μm or less, 400 μm or less, 100 μm or less, 50 μm or less, or 20 μm or less. In this case, the average thickness of the edge portions 114 and 115 refers to the average thickness of the first edge portion 114 and the average thickness of the second edge portion 115, respectively.

[0067] The average thickness of the edge portions 114 and 115 may mean an average value of dimensions of the edge portions 114 and 115 in the third direction, and may be measured at five equally spaced points based on a cross section of the body 110 in the first and third directions.

[0068] The external electrodes 131 and 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110, and may be disposed to extend over a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6. The external electrodes 131 and 132 may include a first external electrode 131 connected to the first internal electrode 121 and a second external electrode 132 connected to the second internal electrode 122.

[0069] The external electrodes 131 and 132 may include electrode layers 131a and 132a disposed on the third surface 3 and the fourth surface 4 and connected to the internal electrodes 121 and 122, respectively, and plating layers 131b and 132b disposed on the electrode layers 131a and 132a, respectively. Specifically, the first external electrode 131 may include a first electrode layer 131a disposed on the third surface 3 and connected to the first internal electrode 121 and a first plating layer 131b disposed on the first electrode layer 131a, and the second external electrode 132 may include a second electrode layer 132a disposed on the fourth surface 4 and connected to the second internal electrode 122 and a second plating layer 132b disposed on the second electrode layer 132a.

[0070] The electrode layers 131a and 132a may include metal and glass. The metal included in the electrode layers 131a and 132a may be used to ensure electrical connection, and the glass may be used to improve the bonding force with the body 110.

[0071] The metal included in the electrode layers 131a and 132a may be any material as long as it has conductivity, and a specific material may be determined in consideration of electrical characteristics, structural stability, etc. For example, the metal included in the electrode layers 131a and 132a may be one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0072] The electrode layers 131 a and 132 a may consist of only a single layer including metal and glass, but the present disclosure is not limited thereto, and the electrode layers 131 a and 132 a may have a multi-layer structure.

[0073] For example, the electrode layers 131a and 132a may include a first layer including metal and glass and a second layer disposed on the first layer and including metal and resin. Since the electrode layers 131a and 132a include the second layer, the bending strength of the multilayer electronic component 100 may be improved.

[0074] The metal included in the second layer is not particularly limited, and may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0075] The metal included in the second layer may include one or more of spherical powder and flaky powder. For example, the metal included in the second layer may be composed only of flaky powder, may be composed only of spherical powder, or may be a mixture of flaky powder and spherical powder. In this case, the spherical powder may also include a shape that may not be completely spherical, for example, a shape in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. Flaky powder refers to a powder having a flat and elongated shape, and is not particularly limited, for example, the length ratio of the major axis to the minor axis (major axis / minor axis) may be 1.95 or greater. The length of the major axis and the length of the minor axis of the spherical powder and the flaky powder can be measured from an image obtained by scanning a cross section in the first direction and the second direction cut from the central portion of the multilayer electronic component in the third direction with a scanning electron microscope (SEM).

[0076] The resin included in the second layer can ensure bonding and absorb impact. The resin is not particularly limited as long as it has bonding and impact absorption, and can be mixed with metal powder to make a paste, for example, one or more selected from epoxy resin, acrylic resin, ethyl cellulose, etc.

[0077] In addition, the second layer may include a plurality of metal particles, an intermetallic compound and a resin. By including the intermetallic compound, the electrical connectivity with the first layer may be further improved. The intermetallic compound is used to improve the electrical connectivity by connecting the plurality of metal particles, and may be used to surround the plurality of metal particles and connect the plurality of metal particles to each other.

[0078] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. For example, because the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin, the metal may melt during the drying and curing process, some metal particles and the intermetallic compound may be formed, and the intermetallic compound may surround the metal particles. In some embodiments, the intermetallic compound may include a low melting point metal having a melting point of 300° C. or less.

[0079] In some embodiments, the second layer may include Sn. During the drying and curing process, Sn may melt, and the molten Sn may wet high melting point metal particles (such as Ag, Ni, or Cu) by capillary action, and may react with some of the Ag, Ni, and Cu metal particles to form intermetallic compounds (such as Ag3Sn, Ni3Sn4, Cu6Sn5, Cu3Sn, etc.). Ag, Ni, or Cu that does not participate in the reaction may remain in the form of metal particles.

[0080] Thus, the plurality of metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0081] The plating layers 131b and 132b can improve the installation characteristics. The types of the plating layers 131b and 132b are not particularly limited, and can be plating layers containing nickel (Ni), tin (Sn), palladium (Pd) and / or their alloys, and can be formed into multiple layers. For example, the plating layers 131b and 132b can be nickel (Ni) plating layers or tin (Sn) plating layers, or can be prepared by sequentially forming nickel (Ni) plating layers and tin (Sn) plating layers. In addition, the plating layers 131b and 132b may include multiple nickel (Ni) plating layers and / or multiple tin (Sn) plating layers.

[0082] Although the drawings show a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 , it is not limited thereto, and the number, shape, etc. of the external electrodes 131 and 132 may be changed according to the shape of the internal electrode or other purposes.

[0083] The size of the multilayer electronic component 100 does not need to be particularly limited. Embodiments of the present disclosure can improve the high temperature reliability of multilayer electronic components used for high temperature and high pressure. In particular, when the size of the multilayer electronic component 100 is 3216 (length × width, 3.2mm × 1.6mm) or larger, the effect of the present disclosure on improving the heat dissipation characteristics and electrical characteristics under high temperature and high pressure can be more significant. For example, when the maximum dimension of the multilayer electronic component 100 in the second direction is 3.2mm or larger and the maximum dimension of the multilayer electronic component 100 in the third direction is 1.6mm or larger, the effect of improving reliability according to the present disclosure can be more significant.

[0084] Hereinafter, an example of a method of manufacturing the above-described multilayer electronic component 100 will be described.

[0085] First, a first dielectric material powder for forming the dielectric layer 111 may be prepared. For example, the first dielectric material powder may include (Ca 1-x Sr x )(Zr 1-y Ti y )O3, wherein x satisfies 0≤x≤0.5, and y satisfies 0≤y≤0.5. The first dielectric material powder can be synthesized by a known method such as a solid state reaction method, a hydrothermal synthesis method, a coprecipitation method, an alkali hydrolysis method, and the like.

[0086] The secondary component powder may be prepared separately from the first dielectric material powder. For example, the secondary component powder may include a first secondary component powder to a third secondary component powder. The first secondary component powder may include an oxide or carbonate containing one or more of Mn, V, Cr, Fe, Ni, and Co. The second secondary component powder may include an oxide or carbonate containing one or more of Y, Dy, Ho, La, Ce, Nd, Sm, Gd, Er, and Zr. The third secondary component powder may include an oxide or carbonate containing Si.

[0087] Next, the prepared first dielectric material powder and secondary component powder, an organic solvent such as ethanol, and a binder such as polyvinyl butyral may be mixed to prepare a slurry for a dielectric layer, and the slurry for a dielectric layer may be coated on a carrier film and dried to prepare a green sheet for a dielectric layer.

[0088] Next, a conductive paste for the internal electrode containing metal powder, a binder, etc. may be printed on the green sheet for the dielectric layer at a predetermined thickness to form an internal electrode pattern using a screen printing method, a gravure printing method, etc. Then, the green sheet for the dielectric layer printed with the internal electrode pattern may be peeled off from the carrier film, and then the green sheets for the dielectric layer printed with the internal electrode pattern may be stacked a predetermined number of layers to form a stacked body.

[0089] The first metal powder may also be added to the slurry for the dielectric layer to obtain the slurry for the covering portion. The first metal powder may include one or more of Cu, W, Ag, and Zn, and the amount of the first metal powder included in the slurry for the covering portion may be, for example, 1.1 to 3.3 parts by weight relative to 100 parts by weight of the first dielectric material powder. The slurry for the covering portion may be coated on a carrier film and dried to prepare a green sheet for the covering portion, and then the green sheets for the covering portion are stacked above and below the stack in the first direction.

[0090] Then, the stacked body may be cut into green sheets of a predetermined size. Preferably, the adhesive and the like included in the cut green sheets may be removed by an adhesive removal process. The conditions of the adhesive removal process may vary depending on the type of adhesive used and are not particularly limited. For example, the adhesive removal process may be performed at a temperature of 180° C. or more and 450° C. or less for a period of time of 0.5 hours or more and 24 hours or less.

[0091] The green sheet subjected to the binder removal treatment may be sintered at a temperature greater than or equal to 1100° C. and less than or equal to 1300° C. to form a body 110 including a capacitor forming part Ac and cover parts 112 and 113 , and the capacitor forming part Ac including a dielectric layer 111 and internal electrodes 121 and 122 .

[0092] Next, the external electrodes 131 and 132 may be formed. The third surface 3 and the fourth surface 4 of the body 110 may be dipped in a conductive paste containing metal powder and glass, and then may be sintered to form electrode layers 131a and 132a. In this case, for example, the sintering temperature may be 700°C to 900°C.

[0093] When the electrode layers 131a and 132a include a first layer including metal and glass and a second layer disposed on the first layer and including a conductive metal and a resin, the second layer can be formed by coating a conductive resin composition including metal powder and a resin on the first layer and drying it, and then performing a curing heat treatment on it at a temperature of 250°C to 550°C.

[0094] (Experimental example)

[0095] <Sample preparation>

[0096] First, Mn as a first subcomponent, Y as a second subcomponent, and Si as a third subcomponent are added to first dielectric material powder particles for forming the dielectric layer 111, and then the first dielectric material powder particles are mixed with an organic solvent and a binder to prepare a slurry for the dielectric layer.

[0097] The slurry for the dielectric layer is coated on a carrier film and dried to prepare a green sheet for the dielectric layer, and a conductive paste for the internal electrode containing Ni powder particles, a binder, etc. is printed on the green sheet for the dielectric layer with a predetermined thickness to form an internal electrode pattern. Then, the green sheet for the dielectric layer printed with the internal electrode pattern is peeled off from the carrier film and then stacked a predetermined number of layers to form a stacked body.

[0098] Next, a slurry for the covering part formed by further adding Cu powder particles to the slurry for the dielectric layer is coated on a carrier film and dried to prepare a green sheet for the covering part, and the green sheets for the covering part are stacked above and below the stacked body in a first direction, the stacked body is cut into green sheets of a predetermined size, and a binder removal process and a sintering process are performed thereon to form the main body 110.

[0099] Next, the body 110 is immersed in a conductive paste containing Cu powder particles and glass and then sintered to form electrode layers 131a and 132a, and plating layers 131b and 132b (where Ni plating layers and Sn plating layers are sequentially formed on the electrode layers) to prepare a sample sheet.

[0100] Sample Nos. 1 to 7 in the following Table 1 were prepared in the same manner except that the amount of the Cu powder particles included in the slurry for the cover was changed within the range of 0 to 3.7 parts by weight based on 100 parts by weight of the first dielectric material powder.

[0101] Next, after obtaining an image of a cross section in the first direction and the second direction cut from the center of the main body 110 of the sample sheet in the third direction using a scanning electron microscope (SEM), under the measurement conditions of accelerating voltage: 10 kV, current: 60 A and working distance: 8.5 mm, 10 equally spaced points in the first direction in the central area of ​​the cover in the second direction were subjected to energy dispersive spectroscopy (EDS) analysis. After measuring the amount of Cu at the 10 points, the average value of the amount of Cu at the 10 points based on 100 mol of the B element is shown in Table 1 below.

[0102] <Thermal Assessment>

[0103] Figure 6 is a diagram schematically illustrating a method for evaluating heat dissipation of a multilayer electronic component. Figure 6 As shown, after the multilayer electronic component 100 is mounted on the printed circuit board 200, the printed circuit board 200 mounted with the multilayer electronic component 100 is mounted on the heat plate 300. The measurement conditions (frequency: 100kHz, temperature: 105°C, voltage: 630V) are applied using a power supply (Keysight E36234A), an oscilloscope (Keysight DSOX1204A), and a source meter (Keysight 34972A), and the temperature change (ΔT) of the multilayer electronic component 100 is measured using a thermal imaging camera 400.

[0104] ΔT shown in Table 1 below is an average value after measuring the temperature change of 5 sample pieces for each sample number.

[0105] <Moisture resistance reliability and insulation resistance (IR) evaluation>

[0106] If a total of 320 sample pieces for each sample number are mounted on a printed circuit board and a voltage of 630 V is applied at a temperature of 85° C. and a relative humidity of 85% for 48 hours, the insulation resistance (IR) value is less than 10% of the initial IR value, it is judged to be defective. Table 1 below lists the ratio of defective sample pieces for each sample number relative to the total number of sample pieces.

[0107] The IR value was measured using an IR measuring device (VITREK QTPro II-950), and the measurement was performed under the conditions of a voltage of 630 V and a measurement time of 60 seconds.

[0108] [Table 1]

[0109]

[0110] Referring to Table 1, it can be seen that since the cover portion of sample No. 1 does not include the first metal such as Cu, the temperature variation of the sample piece is too large. It can be seen that since sample No. 2 includes only less than 2.0 mol of Cu (based on 100 mol of B element) in the cover portion, the temperature variation of the sample piece is still large, and the difference in the temperature variation of the sample piece between sample No. 1 and sample No. 2 is only 0.3°C.

[0111] It can be seen that, since the cover portion includes 10 mol of Cu based on 100 mol of the B element in Sample No. 7, the temperature change of the sample piece is small, but IR is excessively lowered and moisture resistance reliability defects occur.

[0112] It can be seen that since the cover portion includes 2 to 9 mol of Cu based on 100 mol of element B in sample numbers 3 to 6, the temperature change of the sample piece itself is small and the IR value is good. In particular, it can be seen that the difference in the temperature change of the sample piece between sample number 2 and sample number 3 is 2.0°C.

[0113] Furthermore, it can be seen that since the cover portion includes 2 to 6 mol of Cu based on 100 mol of the B element in sample numbers 3 to 5, the temperature change of the sample piece itself is small and the IR value is maintained at 200 GΩ or more.

[0114] The present disclosure is not limited by the above-mentioned embodiments and drawings, but is intended to be limited by the appended claims. Therefore, within the scope of the technical concept of the present disclosure described in the claims, those skilled in the art will be able to make various forms of substitutions, modifications and changes, which will also be considered to fall within the scope of the present disclosure.

[0115] In addition, the expression "embodiment" does not mean the same embodiment, but is provided to emphasize and describe different unique features. However, the embodiments presented above do not exclude the combination of features with other embodiments. For example, unless there is a description that is contrary or contradictory to the content in other embodiments, even if the content described in a specific embodiment is not described in other embodiments, the content can also be understood as a description related to other embodiments.

[0116] In addition, expressions such as "first" and "second" are used to distinguish one component from another component and do not limit the order and / or importance of the components. In some cases, a first element may be referred to as a second element without departing from the scope of the claims, and similarly, a second element may be referred to as a first element.

[0117] As one of many effects of the present disclosure, heat generated in a multilayer electronic component can be effectively dissipated to improve the reliability of the multilayer electronic component.

[0118] While example embodiments have been shown and described above, it will be readily apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the present disclosure as defined by the appended claims.

Claims

1. A multilayer electronic component comprising: a main body including a capacitance forming part and a covering part, the capacitance forming part including dielectric layers and internal electrodes alternately arranged in a first direction, the covering part being provided on two surfaces of the capacitance forming part opposite to each other in the first direction; and an outer electrode disposed on an outer surface of the body and connected to the inner electrode, The covering portion includes a first dielectric material and a first metal, the first dielectric material has a perovskite structure represented by a chemical formula ABO3, the first metal includes one or more of Cu, W, Ag and Zn, and In at least a portion of the covering portion, an amount of the first metal is greater than or equal to 2.0 mol and less than or equal to 9.0 mol based on 100 mol of the B element.

2. The multilayer electronic component according to claim 1, wherein The first metal includes Cu.

3. The multilayer electronic component according to claim 2, wherein: In the at least a portion of the covering portion, an amount of the first metal is equal to or less than 6.0 mol based on 100 mol of the B element.

4. The multilayer electronic component according to claim 1, wherein: A standard deviation of an amount of the first metal measured in the first direction in the covering portion is 3.0 mol or less based on 100 mol of the B element.

5. The multilayer electronic component according to claim 1, wherein The first dielectric material includes a plurality of dielectric grains and grain boundaries disposed between adjacent dielectric grains, and At least a portion of the first metal is included in the plurality of dielectric grains.

6. The multilayer electronic component according to claim 1, wherein: The first dielectric material includes a plurality of dielectric grains and grain boundaries disposed between adjacent dielectric grains, and At least a portion of the first metal is present at the grain boundaries.

7. The multilayer electronic component according to claim 1, wherein: The dielectric layer comprises the first dielectric material, A elements include Ca, and The B element includes Zr.

8. The multilayer electronic component according to claim 1, wherein The first dielectric material includes (Ca 1-x Sr x )(Zr 1- y Ti y )O3, where x satisfies 0≤x≤0.5, and y satisfies 0≤y≤0.

5.

9. The multilayer electronic component according to claim 7, wherein: The dielectric layer further includes a first subcomponent including Mn, and In at least a portion of the dielectric layer, an amount of the first subcomponent is greater than or equal to 0.1 mol and less than or equal to 2.0 mol based on 100 mol of the B element.

10. The multilayer electronic component according to claim 7, wherein The dielectric layer further includes a second subcomponent including Y, and In at least a portion of the dielectric layer, an amount of the second subcomponent is greater than or equal to 0.1 mol and less than or equal to 2.0 mol based on 100 mol of the B element.

11. The multilayer electronic component according to claim 7, wherein: The dielectric layer further includes a third subcomponent, the third subcomponent including Si, and Wherein, in at least a portion of the dielectric layer, based on 100 moles of the B element, the amount of the third subcomponent is greater than or equal to 0.1 mole and less than or equal to 2.0 moles.

12. The multilayer electronic component according to claim 1, wherein The dielectric layer does not include the first metal.

13. The multilayer electronic component according to claim 1, wherein The dielectric layer includes the first metal, and The concentration of the first metal in the dielectric layer is lower than the concentration of the first metal in the covering portion.

14. The multilayer electronic component according to claim 1, wherein The body has a first surface and a second surface opposite to each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite to each other in the second direction, and a fifth surface and a sixth surface connected to the first surface to the fourth surface and opposite to each other in the third direction; The external electrodes are disposed on the third surface and the fourth surface; and The maximum dimension of the multilayer electronic component in the second direction is 3.2 mm or more, and the maximum dimension of the multilayer electronic component in the third direction is 1.6 mm or more.

15. The multilayer electronic component according to claim 1, wherein The first dielectric material includes a plurality of dielectric grains and grain boundaries disposed between adjacent dielectric grains, and The plurality of dielectric grains and the grain boundaries include the first metal.

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