Wafer bonding alignment method, wafer bonding method and wafer bonding alignment equipment

Abstract

The invention provides a wafer bonding alignment method, a wafer bonding method and wafer bonding alignment equipment. The wafer bonding alignment method comprises the following steps: measuring a distance S0 between a first distance measuring element and a second distance measuring element which are oppositely arranged at an interval in a first direction; controlling a second distance measuring element to measure the distances S11, S12,..., S1n between n first mark points A1, A2,..., An on the bonding surface of the first wafer and the second distance measuring element in the first direction; the first distance measuring element is controlled to measure the distances S21, S22,..., S2n between n second mark points B1, B2,..., Bn on the bonding surface of the second wafer and the first distance measuring element in the first direction; and at least one of the first bearing structure and the second bearing structure is controlled to move, so that the first wafer and the second wafer move in opposite directions, and the opposite movement distance between each first mark point Ai and the corresponding second mark point Bi is S1i + S2i-S0-St. The reliability of wafer bonding alignment can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a wafer bonding alignment method, a wafer bonding method and a wafer bonding alignment device. Background Art

[0002] In the wafer-to-wafer bonding process, if the wafers cannot remain parallel before bonding or if the wafers cannot be moved toward each other to the required spacing distance before bonding, the reliability of the bonding between the wafers will be poor, which will lead to wafer bonding failure or poor product performance after wafer bonding. Summary of the invention

[0003] In view of the shortcomings of the related art, the present application proposes a wafer bonding alignment method, a wafer bonding method and a wafer bonding alignment device to solve the problem of poor wafer bonding reliability in the related art.

[0004] The present application provides a wafer bonding alignment method, comprising:

[0005] measuring a distance S0 between a first distance measuring element and a second distance measuring element which are arranged relatively spaced apart from each other in a first direction, wherein the first direction is a direction in which the first distance measuring element points to the second distance measuring element;

[0006] Control the first supporting structure carrying the first wafer to move to a first position between the first distance measuring element and the second distance measuring element, with the bonding surface of the first wafer facing the second distance measuring element; control the second distance measuring element to measure n first marking points A1, A2, ..., A on the bonding surface of the first wafer n The distance S between the second distance measuring element and the first distance measuring element in the first direction 11 , S 12 ,……,S 1n , mark points A1, A2, ..., A n At least three first marking points are not collinear; n is a positive integer greater than or equal to 3;

[0007] Control the first supporting structure carrying the first wafer to move from the first position to an idle position; the idle position and the first position are located in the same plane perpendicular to the first direction; and control the second supporting structure carrying the second wafer to move to a second position opposite to the first position, in the first direction, the distance between the second position and the first distance measuring element is greater than the distance between the first position and the first distance measuring element, and the bonding surface of the second wafer faces the first distance measuring element; and control the first distance measuring element to measure n second marking points B1, B2, ..., B on the bonding surface of the second wafer. nThe distance S between the first distance measuring element and the first distance measuring element in the first direction 21 , S 22 ,……,S 2n , mark points B1, B2, ..., B n At least three of the marking points are not collinear; among them, each second marking point B i With a first marker point A i Correspondingly, i is selected from 1 to n;

[0008] Control the first supporting structure carrying the first wafer to move from the idle position to the first position, so that the bonding surface of the first wafer faces the bonding surface of the second wafer; wherein each first marking point A i and the corresponding second marking point B i The line between them is parallel to the first direction;

[0009] Control at least one of the first supporting structure and the second supporting structure to move so that the first wafer and the second wafer move toward each other so that each first marking point A i and the corresponding second marking point B i The distance between them moving towards each other is S 1i +S 2i -S0-S t , i is selected from 1 to n, S t is a preset distance between the first wafer and the second wafer before bonding.

[0010] In some embodiments, the first supporting structure is connected to n first adjustment elements M on one side away from the first wafer. 11 、M 12 ,……,M 1n , the first regulatory element M 1i With the first marking point A i The connecting line between is parallel to the first direction, i is selected from 1 to n, and n is a positive integer greater than or equal to 3; the controlling at least one of the first bearing structure and the second bearing structure to move so that the first wafer and the second wafer move toward each other includes: controlling the first adjusting element M 11 、M 12 ,……,M 1n Moving the first wafer so that the first wafer moves toward a direction close to the second wafer;

[0011] And / or, the second supporting structure is connected to a side away from the second wafer with n second adjusting elements M 21 、M 22 ,……,M 2n , the second regulatory element M 2iWith the second marking point B i The connecting line between them is parallel to the first direction, i is selected from 1 to n, and n is a positive integer greater than or equal to 3; the controlling at least one of the first bearing structure and the second bearing structure to move so that the first wafer and the second wafer move toward each other includes: controlling the second adjusting element M 21 、M 22 ,……,M 2n Move the second wafer toward a direction close to the first wafer.

[0012] In some embodiments, measuring the distance S0 between the first distance measuring element and the second distance measuring element which are relatively spaced apart in the first direction comprises:

[0013] Control the first ranging element to transmit a first ranging signal to the second ranging element, the second ranging element receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the first ranging element, and after receiving the second ranging signal, the first ranging element calculates a distance S0 between the first ranging element and the second ranging element in a first direction according to a time difference between transmitting the first ranging signal and receiving the second ranging signal;

[0014] In some embodiments, the second ranging element is controlled to transmit a first ranging signal to the first ranging element, the first ranging element receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the second ranging element, and after receiving the second ranging signal, the second ranging element calculates the distance S0 between the first ranging element and the second ranging element in the first direction according to the time difference between transmitting the first ranging signal and receiving the second ranging signal;

[0015] Or, a calibration structure is provided between the first ranging element and the second ranging element, the first ranging element is controlled to transmit a first ranging signal to the calibration structure, the calibration structure receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the first ranging element, the first ranging element calculates the distance d1 between the first ranging element and the calibration structure according to the second ranging signal, the second ranging element is controlled to transmit a third ranging signal to the calibration structure, the calibration structure receives the third ranging signal and converts the third ranging signal into a fourth ranging signal, the fourth ranging signal is reflected to the second ranging element, the second ranging element calculates the distance d3 between the second ranging element and the calibration structure according to the fourth ranging signal, the spacing S0 between the first ranging element and the second ranging element in the first direction is = d1+d2+d3, wherein d3 is the thickness of the calibration structure in the first direction.

[0016] In some embodiments, before measuring the distance S0 between the first distance measuring element and the second distance measuring element which are relatively spaced apart in the first direction, the method further comprises:

[0017] The relative positions of the first distance measuring element and the second distance measuring element are calibrated so that a line between a reference point of the first distance measuring element and a reference point of the second distance measuring element is parallel to the first direction.

[0018] In some embodiments, the first direction is a vertically upward direction or a vertically downward direction.

[0019] In some embodiments, the second distance measuring element is controlled to measure n marking points A1, A2, ..., A on the bonding surface of the first wafer. n The distance S between the second distance measuring element and the first distance measuring element in the first direction 11 , S 12 ,……,S 1n include:

[0020] A second distance measuring element is provided on a side of the bonding surface of the first wafer away from the first distance measuring element, and moves in a first plane perpendicular to the first direction, and the second distance measuring element is controlled to move in sequence in the first plane to the positions corresponding to the marking points A1, A2, ..., A n The corresponding positioning points are P1, P2, ..., P n and controlling the second distance measuring element to measure the marking points A1, A2, ..., A on the bonding surface of the first wafer. n The distance S between the second distance measuring element and the first distance measuring element in the first direction 11 , S 12,……,S 1n ;

[0021] In some embodiments, a plurality of second distance measuring elements are provided on a side of the bonding surface of the first wafer away from the first distance measuring element, and the plurality of second distance measuring elements are located on the same plane perpendicular to the first direction, and the plurality of second distance measuring elements are respectively connected to the marking points A1, A2, ..., A n Correspondingly, the plurality of second distance measuring elements are controlled to measure the marking points A1, A2, ..., A on the bonding surface of the first wafer respectively. n The distance S between the plurality of second distance measuring elements in the first direction is 11 , S 12 ,……,S 1n .

[0022] In some embodiments, controlling the first supporting structure carrying the first wafer to move from the idle position to the first position so that the bonding surface of the first wafer faces the bonding surface of the second wafer includes:

[0023] Control the first supporting structure carrying the first wafer to move from the idle position to the first position, so that the bonding surface of the first wafer faces the bonding surface of the second wafer, and the distance between the bonding surface of the first wafer and the bonding surface of the second wafer in the first direction is less than or equal to 60μm.

[0024] The present application also provides a wafer bonding method, the wafer bonding method comprising:

[0025] Execute the wafer bonding alignment method as described above to align the first wafer and the second wafer;

[0026] Control the driving element connected to the first supporting structure to apply pressure to the supporting surface of the first wafer so that the first wafer moves toward the side close to the second wafer and forms a bonding wave, so that the first wafer and the second wafer are bonded; and / or control the driving element connected to the second supporting structure to apply pressure to the supporting surface of the second wafer so that the second wafer moves toward the side close to the first wafer and forms a bonding wave, so that the first wafer and the second wafer are bonded.

[0027] The present application also provides a wafer bonding alignment device, comprising:

[0028] A first supporting structure, used for supporting a first wafer;

[0029] A second supporting structure, used for supporting a second wafer;

[0030] A first distance measuring element and a second distance measuring element arranged opposite to each other, used for measuring distance;

[0031] A controller is connected to the first supporting structure, the second supporting structure, the first ranging element and the second ranging element, and is used to control the first supporting structure, the second supporting structure, the first ranging element and the second ranging element to perform the wafer bonding alignment method as described above.

[0032] In some embodiments, the wafer bonding equipment further comprises:

[0033] A plurality of adjustment elements are arranged on a side of the first bearing structure away from the second bearing structure and / or on a side of the second bearing structure away from the first bearing structure, and are used to control the movement of at least one of the first bearing structure and the second bearing structure.

[0034] The beneficial effects of this application include:

[0035] In the process of moving the first wafer and the second wafer from the aligned position to the bonding position, according to the measured actual positions of the bonding surface of the first wafer and the bonding surface of the second wafer, the relative distances between the various marking points on the bonding surface of the first wafer and the corresponding marking points on the bonding surface of the second wafer are adjusted, so that when the first wafer and the second wafer are located at the bonding position, the spacings between the various marking points on the bonding surface of the first wafer and the corresponding marking points on the bonding surface of the second wafer are equal, and the bonding surface of the first wafer and the bonding surface of the second wafer remain parallel. And ensure that the actual spacing between the bonding surface of the first wafer and the bonding surface of the second wafer is the preset bonding distance, thereby achieving the parallelism between the bonding surfaces of the first wafer and the second wafer before bonding and ensuring the precise bonding distance between the first wafer and the second wafer.

[0036] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0038] Figure 1 Shown is a schematic diagram of the equipment structure of each step of the wafer bonding process in the related art;

[0039] Figure 2 The figure is a schematic diagram of the structure of calibrating a motor using a micrometer in the related art;

[0040] Figure 3Shown is a schematic diagram of the equipment structure of each step of a wafer bonding process provided by an exemplary embodiment of the present application;

[0041] Figure 4 Shown is a schematic diagram of the equipment structure of each step of a wafer bonding process provided by an exemplary embodiment of the present application;

[0042] Figure 5 It is a schematic diagram of the structure of the equipment in the step of bonding after wafer alignment provided by an exemplary embodiment of the present application;

[0043] Figure 6 It is a schematic diagram of the structure of the equipment in the step of bonding after wafer alignment provided by an exemplary embodiment of the present application;

[0044] Figure 7 It is a schematic diagram of the structure of the equipment in the step of bonding after wafer alignment provided by an exemplary embodiment of the present application;

[0045] Figure 8 Shown is a schematic diagram of the structure of an apparatus in a distance measurement step in a wafer bonding process provided by an exemplary embodiment of the present application;

[0046] Fig. 9 Shown is a schematic diagram of the equipment structure in a distance measurement step in a wafer bonding process provided by an exemplary embodiment of the present application.

[0047] In the figure: 100'-upper wafer; 200'-lower wafer; 31'-upper chuck; 32'-upper tray; 41'-lower chuck; 42'-lower tray; 301'-cylinder piston; 302'-calibration lens; 100-first wafer; 100a-first bonding surface; 100b-first bearing surface; 200-second wafer; 200a-second bonding surface; 200b-second bearing surface; 30-first bearing structure; 31-first chuck; 32-first tray; 40-second bearing structure; 41-second chuck; 42-second tray; 301 (401)-driving element; 302 (402)-calibration structure; 50-position sensor. DETAILED DESCRIPTION

[0048] In related technologies, such as Figure 1 As shown, the wafer bonding equipment is provided with an upper lens E1' and a lower lens E2' which are arranged integrally and relatively to each other. The wafer bonding equipment is also provided with an upper tray 32' for carrying an upper wafer 100' and a lower tray 42' for carrying a lower wafer 200'. An upper chuck 31' for clamping and fixing the upper wafer 100' is also provided in the upper tray 32', and a lower chuck 41' for clamping and fixing the lower wafer 200' is also provided in the lower tray 42'. Both the upper tray 32' and the lower tray 42' can move in a plane. The wafer bonding process includes the following steps:

[0049] The first step, such as Figure 1 As shown in (a), the upper lens E1' and the lower lens E2' are relatively calibrated, and if there is a deviation between the upper lens and the lower lens, the deviation distance is recorded; for example, the upper lens E1' and the lower lens E2' can be calibrated by a calibration lens 302' provided on the side of the upper tray;

[0050] The second step is, Figure 1 As shown in (b), the lower tray 42' carrying the lower wafer 200' is horizontally moved from the idle position to the marked position of the lower tray 42' in the plane O2'. For example, the marked position of the lower tray 42' can be determined by the position sensor 50'; then the upper lens E1' and the lower lens E2' that are integrally arranged are controlled and moved to align the upper lens E1' with the marked point on the surface of the lower wafer 200', and the positions of the upper lens E1' and the lower lens E2' that are integrally arranged are fixed;

[0051] The third step is Figure 1 As shown in (c), the lower tray 42' carrying the lower wafer 200' is horizontally moved from the marked position of the lower tray 42' to the idle position in the plane O2', and the upper tray 32' is controlled to move in the plane O1' so that the marked point on the surface of the upper wafer 100' in the upper tray 32' is aligned with the lower lens E2'. If there is a deviation between the upper lens E1' and the lower lens E2', the deviation distance is synchronously considered so that the upper tray 32' carrying the upper wafer 100' is horizontally moved from the idle position to the marked position of the upper tray 32';

[0052] The fourth step is Figure 1 As shown in (d), the lower tray 42' carrying the lower wafer 200' is horizontally moved again from the idle position to the marked position of the lower tray 42', and the upper wafer 100' and the lower wafer 200' are aligned with each other;

[0053] Step 5: Figure 1 As shown in (e), the motors M1', M2', and M3' connected to the lower tray 42' are controlled to drive the lower tray 42' to move in a direction close to the upper tray 32' until the lower tray 42' moves from the marked position of the lower tray 42' to the bonding position, that is, the lower tray moves from the plane O2' to the plane O3';

[0054] Step 6: Figure 1 As shown in (f), the cylinder piston 301' abutting against the back side of the upper wafer 100' is controlled to exert pressure on the upper wafer 100', so that the upper wafer 100' moves downward and forms a bonding wave, so that the upper wafer 100' and the lower wafer 200' are bonded.

[0055] like Figure 2As shown, in the related art, a detection instrument (such as a micrometer) is usually installed on the upper chuck 31' to calibrate the parallelism of multiple motors M1', M2', and M3' connected to the lower chuck 41' to ensure that the lower chuck 41' can remain parallel after moving from the marking position to the bonding position. Since the installation and fixing operation of the detection instrument is relatively cumbersome and troublesome, the number of debugging is relatively small, for example, debugging is only performed when the equipment is installed as a whole. However, after multiple driving operations of the motors M1', M2', M3' connected to the lower chuck 41' of the lower wafer 200' in the wafer bonding process, the origins of the motors M1', M2', M3' may shift, resulting in a deviation in the parallelism between the upper chuck 31' and the lower chuck 41' at the bonding position, and further resulting in a deviation in the parallelism between the upper wafer 100' and the lower wafer 200'. As a result, the upper wafer 100' and the lower wafer 200' cannot remain parallel when moving to the bonding position, causing wafer bonding failure or poor product performance after bonding. In addition, the wafers produced in different batches may have different thickness deviations. If the thickness of the upper wafer 100' and the lower wafer 200' is different from the wafer thickness set by the wafer bonding equipment, it is impossible to ensure that the gap required for the actual bonding between the upper wafer 100' and the lower wafer 200' is maintained when the upper wafer 100' and the lower wafer 200' are moved to the bonding position set by the equipment, which may cause the wafers to fail to successfully complete the bonding under the action of the bonding wave, resulting in wafer slippage and bonding failure. Furthermore, if the bonding surface and the bearing surface of the wafer are not completely parallel, and the bonding surface has a certain inclination relative to the bearing surface, even if the upper chuck and the lower chuck are kept relatively parallel, the parallelism between the bonding surface of the upper wafer and the bonding surface of the lower wafer cannot be guaranteed. Therefore, the deviation in parallelism between the upper chuck and the lower chuck caused by the deviation of the motor origin in the related art, and the deviation in thickness uniformity between different batches of wafers will both lead to the problem of bonding failure between the upper wafer and the lower wafer.

[0056] The wafer bonding alignment method, wafer bonding method and wafer bonding alignment device provided in the present application are intended to solve the above technical problems of the related art.

[0057] The wafer bonding alignment method, wafer bonding method and wafer bonding alignment device in the embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the features in the following embodiments can complement or be combined with each other.

[0058] The present application embodiment provides a wafer bonding alignment method, such as Figure 3 or Figure 4 As shown, the following steps are included:

[0059] Step 100: Figure 3 (a) or Figure 4As shown in (a), the distance S0 between the first distance measuring element E1 and the second distance measuring element E2 which are arranged relatively spaced apart in the first direction is measured, and the first direction is the direction from the first distance measuring element E1 to the second distance measuring element E2;

[0060] Step 200: Figure 3 (b) or Figure 4 As shown in (b), the first supporting structure 30 carrying the first wafer 100 is controlled to move to a first position between the first distance measuring element E1 and the second distance measuring element E2, with the bonding surface of the first wafer 100 facing the second distance measuring element E2; and the second distance measuring element E2 is controlled to measure the distances S in the first direction between the three first marking points A1, A2 and A3 on the bonding surface of the first wafer 100 and the second distance measuring element E2 respectively. 11 , S 12 and S 13 , the marked points A1, A2 and A3 are not collinear;

[0061] Step 300: Figure 3 (c) or Figure 4 As shown in (c), the first supporting structure 30 carrying the first wafer 100 is controlled to move from the first position to the idle position; the idle position and the first position are located in the same plane perpendicular to the first direction; and the second supporting structure 40 carrying the second wafer 200 is controlled to move to a second position opposite to the first position, in the first direction, the distance between the second position and the first distance measuring element E1 is greater than the distance between the first position and the first distance measuring element E1, and the bonding surface of the second wafer 200 faces the first distance measuring element E1; and the first distance measuring element E1 is controlled to measure the distances S in the first direction between the three second marking points B1, B2 and B3 on the bonding surface of the second wafer 200 and the first distance measuring element E1 respectively. 21 , S 22 and S 23 , the marking points B1, B2 and B3 are not collinear; among them, each second marking point B i With a first marker point A i Correspondingly, i is selected from 1, 2 and 3;

[0062] Step 400: Figure 3 Medium (d) or Figure 4 As shown in (d), the first supporting structure 30 carrying the first wafer 100 is controlled to move from the idle position to the first position, so that the bonding surface of the first wafer 100 faces the bonding surface of the second wafer 200; wherein the line between the first marking point A1 and the corresponding second marking point B1 is parallel to the first direction, the line between the first marking point A2 and the corresponding second marking point B2 is parallel to the first direction, and the line between the first marking point A3 and the corresponding second marking point B3 is parallel to the first direction;

[0063] Step 500: Figure 3 (e) or Figure 4 As shown in (e), at least one of the first supporting structure 30 and the second supporting structure 40 is controlled to move so that the first wafer 100 and the second wafer 200 move toward each other so that each first marking point A i and the corresponding second marking point B i The distance between them moving towards each other is S 1i +S 2i -S0-S t , i is selected from 1, 2 and 3, where S t It is a preset distance between the first wafer 100 and the second wafer 200 before bonding.

[0064] Taking into account that the spacing between the first wafer 100 and the second wafer 200 is relatively small during the wafer bonding alignment process, this embodiment uses the positions of the relatively arranged first ranging element E1 and the second ranging element E2 as a reference, and measures the spacing between at least 3 non-collinear marking points on the second wafer 200 and the positions of at least 3 non-collinear marking points on the first wafer 100 and the reference position (the first ranging element E1 or the second ranging element E2) through the first ranging element E1 and the second ranging element E2, so as to measure the actual positions of the bonding surfaces of the first wafer 100 and the bonding surfaces of the second wafer 200. In the process of moving the first wafer 100 and the second wafer 200 from the aligned position to the bonding position, the relative distances between the respective marking points on the bonding surface of the first wafer 100 and the respective corresponding marking points on the bonding surface of the second wafer 200 are adjusted according to the actual positions of the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 obtained by actual measurement, so that when the first wafer 100 and the second wafer 200 are located at the bonding position, the spacings between the respective marking points on the bonding surface of the first wafer 100 and the respective corresponding marking points on the bonding surface of the second wafer 200 are equal, and the spacings are both S. t , the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 remain parallel. And ensure that the actual distance between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 is a preset bonding distance S t Thus, it is possible to achieve that the bonding surfaces of the first wafer 100 and the second wafer 200 before bonding remain parallel and ensure a precise bonding distance between the first wafer 100 and the second wafer 200.

[0065] In some embodiments, in steps 100 to 400 before step 500, the first supporting structure 30 moves in the first plane O1, and the second supporting structure 40 moves in the second plane O2, so as to avoid the positional offset of the first supporting structure 30 and the second supporting structure 40 in the first direction, which affects the distance of the first wafer 100 and the second wafer 200 moving toward each other. In step 500, after the first wafer 100 and the second wafer 200 move toward each other, the plane where the first supporting structure 30 is located becomes the third plane O3, and the plane where the second supporting structure 40 is located becomes the fourth plane O4, and the bonding surface of the first wafer 100 supported by the first supporting structure 30 located in the third plane O3 and the bonding surface of the second wafer 200 supported by the second supporting structure 40 located in the fourth plane O4 are parallel.

[0066] It should be noted that, for ease of understanding, this embodiment is explained by taking the bonding surface of the first wafer 100 as having three first marking points, namely, first marking points A1, A2 and A3, and the bonding surface of the second wafer 200 as having three second marking points, namely, second marking points B1, B2 and B3. It is understandable that the number of the first marking points on the bonding surface of the first wafer 100 and the number of the second marking points on the bonding surface of the second wafer 200 can both be greater than 3, such as positive integers such as 4, 5, 6, etc., and also fall within the protection scope of this application.

[0067] like Figure 3 (a) or Figure 4 As shown in (a), the first wafer 100 of the present application has a first bonding surface 100a and a first bearing surface 100b arranged oppositely, and the second wafer 200 has a second bonding surface 200a and a second bearing surface 200b arranged oppositely, wherein the first bonding surface 100a is a side surface of the first wafer 100 away from the first bearing structure 30, and the first bearing surface 100b is a side surface of the first wafer 100 facing the first bearing structure 30. The second bonding surface 200a is a side surface of the second wafer 200 away from the first bearing structure 30, and the second bearing surface 200b is a side surface of the second wafer 200 facing the first bearing structure 30.

[0068] In some embodiments, each step in the wafer bonding method of the present application can be implemented by controlling the first supporting structure 30 and the second supporting structure 40 to move by a controller. Figure 3 or Figure 4As shown, the first bearing structure 30 includes a first chuck 31 and a first tray 32 for supporting the first chuck 31, the first chuck 31 is used to clamp and fix the position of the first wafer 100, and the first tray 32 is connected to the controller. In other embodiments, the first bearing structure 30 includes a first chuck 31, the first chuck 31 is used to clamp and fix the position of the first wafer 100, and the first chuck 31 is connected to the controller.

[0069] In some embodiments, Figure 3 or Figure 4 As shown, the second bearing structure 40 includes a second chuck 41 and a second tray 42 for supporting the second chuck 41, the second chuck 41 is used to clamp and fix the position of the second wafer 200, and the second tray 42 is connected to the controller. In other embodiments, the second bearing structure 40 includes a second chuck 41, the second chuck 41 is used to clamp and fix the position of the second wafer 200, and the second chuck 41 is connected to the controller.

[0070] In some embodiments, Figure 3 As shown, a calibration structure 302 is provided on the side of the first bearing structure 30. In other embodiments, as Figure 4 As shown, a calibration structure 402 is provided on the side of the second supporting structure 40. When the first distance measuring element E1 and the second distance measuring element E2 are arranged relative to each other, the first calibration distance measuring signal emitted by the first distance measuring element E1 and the second calibration distance measuring signal emitted by the second distance measuring element E2 are respectively emitted from the opposite sides of the calibration structure, so that the first calibration distance measuring signal and the second calibration distance measuring signal are relative to and overlap with each other to calibrate the relative position between the first distance measuring element E1 and the second distance measuring element E2.

[0071] In some embodiments, Figure 3 or Figure 4 As shown, a position sensor 50 is further provided on one side of the second bearing structure 40 in the present application, for identifying the position of the second bearing structure 40. In other embodiments, a position sensor 50 is further provided on one side of the first bearing structure 30 in the present application, for identifying the position of the first bearing structure 30 (not shown in the figure). Of course, in other embodiments, corresponding position sensors may be provided on the sides of both the first bearing structure 30 and the second bearing structure 40.

[0072] In some embodiments, Figure 3 As shown, the first direction is vertically downward, and the direction from the first distance measuring element E1 to the second distance measuring element E2 is vertically downward. When the first wafer 100 and the second wafer 200 are arranged opposite to each other, the direction from the first wafer 100 to the second wafer 200 is vertically downward.

[0073] In some embodiments, Figure 4As shown, the first direction is vertically upward, and the direction from the first distance measuring element E1 to the second distance measuring element E2 is vertically upward. When the first wafer 100 and the second wafer 200 are arranged opposite to each other, the direction from the first wafer 100 to the second wafer 200 is vertically upward.

[0074] In some embodiments, Figure 5 As shown, Figure 3 Based on (e), the first supporting structure 30 is connected to three first adjustment elements M on one side away from the first wafer 100. 11 、M 12 and M 13 , the first regulatory element M 1i With the first mark point A i The connecting line between them is parallel to the first direction, i is selected from 1, 2 and 3; in step 500, controlling at least one of the first supporting structure 30 and the second supporting structure 40 to move so that the first wafer 100 and the second wafer 200 move toward each other includes: controlling the first adjusting element M 11 、M 12 and M 13 The first wafer 100 moves toward the direction close to the second wafer 200 .

[0075] In this embodiment, a plurality of first adjusting elements are connected only to the side of the first supporting structure 30 away from the first wafer 100. At this time, the second wafer 200 supported by the second supporting structure 40 remains in the original position, and the first adjusting elements M are controlled. 11 The distance moved is S 11 +S 21 -S0-S t , controls the first regulating element M 12 The distance moved is S 12 +S 22 -S0-S t , controls the first regulating element M 13 The distance moved is S 13 +S 23 -S0-S t In this embodiment, each first regulating element M is controlled separately. 11 、M 12 and M 13 The corresponding distances are moved according to the actual spacings between the marking points, so that the spacings between the marking points on the bonding surface of the first wafer 100 and the corresponding marking points on the bonding surface of the second wafer 200 are equal and both are S. t , further making the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 remain parallel and at a preset bonding distance.

[0076] In some embodiments, Figure 6 As shown, Figure 3 Based on (e), the second supporting structure 40 is connected to three second adjustment elements M on one side away from the second wafer 200. 21 、M 22 and M 23 , the second regulatory element M 2i With the second mark point B i The connecting line between them is parallel to the first direction, i is selected from 1, 2 and 3; in step 500, controlling at least one of the first supporting structure 30 and the second supporting structure 40 to move so that the first wafer 100 and the second wafer 200 move toward each other includes: controlling the second adjusting element M 21 、M 22 and M 23 The second wafer 200 moves toward a direction close to the first wafer 100 .

[0077] In this embodiment, a plurality of second adjusting elements are connected only to the side of the second supporting structure 40 away from the second wafer 200. At this time, the first wafer 100 supported by the first supporting structure 30 remains in the original position, and the second adjusting elements M are controlled. 21 The distance moved is S 11 +S 21 -S0-S t , controls the second regulating element M 22 The distance moved is S 12 +S 22 -S0-S t , controls the second regulating element M 23 The distance moved is S 13 +S 23 -S0-S t In this embodiment, each second regulating element M is controlled separately. 21 、M 22 and M 23 The corresponding distances are moved according to the actual spacings between the marking points, so that the spacings between the marking points on the bonding surface of the first wafer 100 and the corresponding marking points on the bonding surface of the second wafer 200 are equal and both are S. t , further making the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 remain parallel and located at a preset bonding distance.

[0078] In some embodiments, Figure 7 As shown, Figure 3 Based on (e), the first supporting structure 30 is connected to three first adjustment elements M on one side away from the first wafer 100. 11 、M 12 and M 13 , the first regulatory element M 1iWith the first mark point A i The connecting line between them is parallel to the first direction, i is selected from 1, 2 and 3; the second supporting structure 40 is connected to three second adjustment elements M on the side away from the second wafer 200 21 、M 22 and M 23 , the second regulatory element M 2i With the second mark point B i The connecting line between them is parallel to the first direction, i is selected from 1, 2 and 3; in step 500, controlling at least one of the first supporting structure 30 and the second supporting structure 40 to move so that the first wafer 100 and the second wafer 200 move toward each other includes: controlling the first adjusting element M 11 、M 12 and M 13 and the second regulatory element M 21 、M 22 and M 23 The first wafer 100 moves toward the direction close to the second wafer 200 .

[0079] In this embodiment, a plurality of first adjusting elements may be connected to a side of the first supporting structure 30 away from the first wafer 100, and a plurality of second adjusting elements may be connected to a side of the second supporting structure 40 away from the second wafer 200, and the first adjusting elements and the second adjusting elements may be controlled to move toward each other or in the same direction. When the first adjusting elements and the second adjusting elements move in the same direction, the first adjusting elements M are controlled. 11 and the second regulatory element M 21 The difference in distance moved is S 11 +S 21 -S0-S t , controls the first regulating element M 12 and the second regulatory element M 22 The difference in distance moved is S 12 +S 22 -S0-S t , controls the first regulating element M 13 and the second regulatory element M 23 The difference in distance moved is S 13 +S 23 -S0-S t When each first regulating element and each second regulating element move toward each other, the first regulating element M is controlled 11 and the second regulatory element M 21 The sum of the distances moved is S 11 +S 21 -S0-S t , controls the first regulating element M 12 and the second regulatory element M 22 The sum of the distances moved is S12 +S 22 -S0-S t , controls the first regulating element M 13 and the second regulatory element M 23 The sum of the distances moved is S 13 +S 23 -S0-S t .

[0080] In some embodiments, measuring the distance S0 between the first distance measuring element E1 and the second distance measuring element E2 disposed relatively spaced apart in the first direction in step 100 includes:

[0081] The first ranging element E1 is controlled to transmit a first ranging signal to the second ranging element E2, the second ranging element E2 receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the first ranging element E1, and after receiving the second ranging signal, the first ranging element E1 calculates the distance S0 between the first ranging element E1 and the second ranging element E2 in the first direction according to the time difference between transmitting the first ranging signal and receiving the second ranging signal.

[0082] In this embodiment, the first distance measuring element E1 itself can be used as a distance measuring structure without setting up an additional distance measuring structure, which can simplify the overall equipment. In addition, since the first distance measuring element E1 and the second distance measuring element E2 are arranged relative to each other, the measurement method is relatively simple, which can improve the efficiency of the wafer bonding process.

[0083] In some embodiments, the first distance measuring element E1 includes any one of a laser distance measuring device, an infrared distance measuring device, a video distance measuring device or an ultrasonic distance measuring device. Then the first distance measuring signal and the second distance measuring signal may be optical signals, infrared signals, image signals or ultrasonic signals.

[0084] In some embodiments, measuring the distance S0 between the first distance measuring element E1 and the second distance measuring element E2 disposed relatively spaced apart in the first direction in step 100 includes:

[0085] The second ranging element E2 is controlled to transmit a first ranging signal to the first ranging element E1, the first ranging element E1 receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the second ranging element E2, and after receiving the second ranging signal, the second ranging element E2 calculates the distance S0 between the first ranging element E1 and the second ranging element E2 in the first direction according to the time difference between transmitting the first ranging signal and receiving the second ranging signal.

[0086] In this embodiment, the second distance measuring element E2 itself can be used as a distance measuring structure without setting up an additional distance measuring structure, which can simplify the overall equipment. In addition, since the first distance measuring element E1 and the second distance measuring element E2 are relatively arranged, the measurement method is relatively simple, which can improve the efficiency of the wafer bonding process.

[0087] In some embodiments, the second distance measuring element E2 includes any one of a laser distance measuring device, an infrared distance measuring device, a video distance measuring device or an ultrasonic distance measuring device. Then the first distance measuring signal and the second distance measuring signal may be optical signals, infrared signals, image signals or ultrasonic signals.

[0088] In some embodiments, Figure 3 As described in (a) above, in step 100, measuring the distance S0 in the first direction between the first distance measuring element E1 and the second distance measuring element E2 which are relatively spaced apart comprises:

[0089] A calibration structure 302 is provided between the first ranging element E1 and the second ranging element E2. The first ranging element E1 is controlled to transmit a first ranging signal to the calibration structure 302. The calibration structure 302 receives the first ranging signal and converts the first ranging signal into a second ranging signal. The second ranging signal is reflected to the first ranging element E1. The first ranging element E1 calculates a distance d1 between the first ranging element E1 and the calibration structure 302 according to the second ranging signal. The second ranging element E2 is controlled to transmit a third ranging signal to the calibration structure 302. The calibration structure 302 receives the third ranging signal and converts the third ranging signal into a fourth ranging signal. The fourth ranging signal is reflected to the second ranging element E2. The second ranging element E2 calculates a distance d3 between the second ranging element E2 and the calibration structure 302 according to the fourth ranging signal. The spacing S0 between the first ranging element E1 and the second ranging element E2 in the first direction is d1+d2+d3, wherein d3 is the thickness of the calibration structure 302 in the first direction.

[0090] In some embodiments, before measuring the distance S0 between the first distance measuring element E1 and the second distance measuring element E2 which are arranged relatively spaced apart in the first direction, the method further includes:

[0091] The relative positions of the first distance measuring element E1 and the second distance measuring element E2 are calibrated so that a line between a reference point of the first distance measuring element E1 and a reference point of the second distance measuring element E2 is parallel to the first direction.

[0092] In this embodiment, the relative position between the first distance measuring element E1 and the second distance measuring element E2 can be calibrated so that the lines between each first marking point and each second marking point are parallel to the first direction when each first marking point on the bonding surface of the first wafer 100 and each second marking point on the bonding surface of the second wafer 200 are subsequently measured.

[0093] In some embodiments, the calibration structure is made of a light-transmitting material, and calibration mark points are provided on two relative surfaces of the calibration structure perpendicular to the first direction. The first ranging element and the second ranging element both have a camera function. Calibration of the relative positions of the first ranging element E1 and the second ranging element E2 includes: controlling the first ranging element to capture a first image of the calibration mark points, controlling the second ranging element to capture a second image of the calibration mark points, recording the positions of the calibration mark points in the first image and the positions of the calibration mark points in the second image, if the positions of the calibration mark points in the first image coincide with the calibration mark points in the second image, then recording that the first ranging element and the second ranging element are completely aligned; if the positions of the calibration mark points in the first image do not coincide with the calibration mark points in the second image and there is a deviation, then recording the deviation angle and distance, and calibration is achieved. It should be noted that the first ranging element E1 and the second ranging element E2 may not be completely aligned relative to each other. If the first ranging element E1 and the second ranging element E2 are not completely aligned, the deviation is recorded and taken into account in subsequent measurements so that the lines between the first marking points on the bonding surface of the first wafer 100 and the second marking points on the bonding surface of the second wafer 200 are parallel to the first direction.

[0094] In some embodiments, in step 200, the second distance measuring element E2 is controlled to measure the distances S in the first direction between the three marking points A1, A2 and A3 on the bonding surface of the first wafer 100 and the second distance measuring element E2. 11 , S 12 and S 13 include:

[0095] like Figure 3 (b) or Figure 4 As shown in (b), a second distance measuring element E2 is provided on the side of the bonding surface of the first wafer 100 away from the first distance measuring element E1, and moves in a first plane perpendicular to the first direction. The second distance measuring element E2 is controlled to move in the first plane to the positions corresponding to the marking points A1, A2, ..., A n The corresponding positioning points P1, P2 and P3 are respectively controlled to control the second distance measuring element E2 to measure the distance S in the first direction between the marking points A1, A2 and A3 on the bonding surface of the first wafer 100 and the second distance measuring element E2 11 , S 12 and S 13 .

[0096] In some embodiments, similar to the above embodiments, in step 300, the first distance measuring element E1 is controlled to measure the distances S in the first direction between the three second marking points B1, B2 and B3 on the bonding surface of the second wafer 200 and the first distance measuring element E1. 21 , S 22and S 23 include:

[0097] like Figure 3 (c) or Figure 4 As shown in (c), a first distance measuring element E1 is provided on a side of the bonding surface of the second wafer 200 away from the second distance measuring element E2, and moves in a first plane perpendicular to the first direction. The first distance measuring element E1 is controlled to move in the first plane to positioning points Q1, Q2 and Q3 corresponding to the marking points B1, B2 and B3 respectively, and the first distance measuring element E1 is controlled to measure the distances S in the first direction between the marking points B1, B2 and B3 on the bonding surface of the first wafer 100 and the second distance measuring element E2 respectively. 21 , S 22 and S 23 .

[0098] In some embodiments, the first distance measuring element E1 and the second distance measuring element E2 are integrally arranged opposite to each other, and the relative positions of the first distance measuring element E1 and the second distance measuring element E2 are fixed to each other.

[0099] In some embodiments, in step 200, the second distance measuring element E2 is controlled to measure the distances S in the first direction between the three marking points A1, A2 and A3 on the bonding surface of the first wafer 100 and the second distance measuring element E2. 11 , S 12 and S 13 include:

[0100] by Figure 3 (b) is the basis, such as Figure 8 As shown, three second distance measuring elements E1 are arranged on the side of the bonding surface of the first wafer 100 away from the first distance measuring element E1. 21 、E 22 and E 23 , multiple second distance measuring elements E 21 、E 22 and E 23 Located on the same plane perpendicular to the first direction, a plurality of second distance measuring elements E 21 、E 22 and E 23 Corresponding to the marking points A1, A2 and A3 respectively, the second distance measuring element E is controlled 21 、E 22 and E 23 The distance between the marking points A1, A2 and A3 on the bonding surface of the first wafer 100 and the second distance measuring element E is measured respectively. 21 、E 22 and E 23 The spacing S between 11 , S 12 and S 13 .

[0101] In some embodiments, similar to the above embodiments, in step 300, the first distance measuring element E1 is controlled to measure the distances S in the first direction between the three second marking points B1, B2 and B3 on the bonding surface of the second wafer 200 and the first distance measuring element E1. 21 , S 22 and S 23 include:

[0102] by Figure 3 Based on (c), Fig. 9 As shown, three first distance measuring elements E2 are provided on the side of the bonding surface of the first wafer 100 away from the second distance measuring element E2. 11 、E 12 and E 13 , a plurality of first distance measuring elements E 11 、E 12 and E 13 Located on the same plane perpendicular to the first direction, a plurality of first distance measuring elements E 11 、E 12 and E 13 Corresponding to the marking points B1, B2 and B3 respectively, the first distance measuring element E is controlled 11 、E 12 and E 13 The distance between the marking points B1, B2 and B3 on the bonding surface of the second wafer 200 and the first distance measuring element E is measured respectively. 11 、E 12 and E 13 The spacing S between 21 , S 22 and S 23 .

[0103] According to the above embodiments, in the present application, a single distance measuring element can be used to successively measure the distances between multiple marking points and the bonding surface of the wafer in the same plane, or multiple distance measuring elements located in the same plane can be used to measure the distances between multiple marking points and the bonding surface of the wafer respectively, and the design is more flexible.

[0104] In some embodiments, the first distance measuring element E 11 、E 12 and E 13 With the second distance measuring element E 21 、E 22 and E 23 The first distance measuring element E is arranged in an integral manner. 11 、E 12 and E 13 and the second distance measuring element E 21 、E 22 and E 23The relative positions are fixed to each other.

[0105] In some embodiments, in step 400, controlling the first supporting structure 30 supporting the first wafer 100 to move from the idle position to the first position so that the bonding surface of the first wafer 100 faces the bonding surface of the second wafer 200 includes:

[0106] The first supporting structure 30 carrying the first wafer 100 is controlled to move from the idle position to the first position so that the bonding surface of the first wafer 100 faces the bonding surface of the second wafer 200, and the spacing between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 in the first direction is less than or equal to 60μm.

[0107] In the present embodiment, when the first wafer 100 and the second wafer 200 are aligned, the distance between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 is relatively small. Therefore, it is not convenient to directly measure the distance between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 at various locations. Therefore, the present application can indirectly measure the distance between each marking point on the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 by successively measuring the distance between the first ranging element and the bonding surface of the second wafer 200 and the distance between the second ranging element and the bonding surface of the first wafer 100. The measurement method is relatively simple and feasible.

[0108] In some embodiments, the spacing between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 in the first direction may be 60 μm, 50 μm, 40 μm, 30 μm, 20 μm, and 10 μm.

[0109] Based on the same inventive concept, the present application also provides a wafer bonding method, comprising the following steps:

[0110] like Figure 3 (a) to (e) or Figure 4 As shown in (a) to (e), the first wafer 100 and the second wafer 200 are aligned by performing the wafer bonding alignment method as described above;

[0111] like Figure 3 As shown in (f), the driving element 301 connected to the first supporting structure 30 is controlled to apply pressure to the supporting surface of the first wafer 100 to move the first wafer 100 toward the side close to the second wafer 200 and form a bonding wave to bond the first wafer 100 to the second wafer 200.

[0112] Based on the same inventive concept, the present application also provides another wafer bonding method, comprising the following steps:

[0113] like Figure 4As shown in (a) to (e), the first wafer 100 and the second wafer 200 are aligned by performing the wafer bonding alignment method as described above;

[0114] like Figure 4 As shown in (f), the driving element 401 connected to the second supporting structure 40 is controlled to apply pressure to the supporting surface of the second wafer 200 to move the second wafer 200 toward the side close to the first wafer 100 to form a bonding wave, so that the first wafer 100 and the second wafer 200 are bonded.

[0115] Based on the same inventive concept, the present application also provides a wafer bonding alignment device, comprising a first supporting structure 30, a second supporting structure 40, and a first ranging element E1 and a second ranging element E2 arranged relatively thereto, and a controller, wherein: the first supporting structure 30 is used to support the first wafer 100; the second supporting structure 40 is used to support the second wafer 200; the first ranging element E1 and the second ranging element E2 arranged relatively thereto are used to measure the distance; the controller is connected to the first supporting structure 30, the second supporting structure 40, the first ranging element E1 and the second ranging element E2, and is used to control the first supporting structure 30, the second supporting structure 40, the first ranging element E1 and the second ranging element E2 to perform the wafer bonding alignment method as above.

[0116] In some embodiments, the wafer bonding device further includes a plurality of adjustment elements, which can be connected to at least one of the first supporting structure 30 and the second supporting structure 40 to control the movement of at least one of the first supporting structure 30 and the second supporting structure 40 .

[0117] A plurality of adjustment elements may be arranged on a side of the connected support structure facing away from the other support structure.

[0118] In some examples, such as Figure 5 As shown, the wafer bonding device includes a plurality of first adjustment elements M 11 、M 12 and M 13 , which is arranged on a side of the first bearing structure 30 away from the second bearing structure 40 , and is used to control the movement of the first bearing structure 30 .

[0119] In other examples, such as Figure 6 As shown, the wafer bonding device includes a plurality of second adjustment elements M 21 、M 22 and M 23 , which is arranged on a side of the second bearing structure 40 away from the first bearing structure 30 , and is used to control the movement of the second bearing structure 40 .

[0120] In some other examples, such as Figure 7 As shown, the wafer bonding device includes a plurality of first adjustment elements M 11、M 12 and M 13 and a plurality of second regulatory elements M 21 、M 22 and M 23 , the first regulatory element M 11 、M 12 and M 13 are both arranged on a side of the first bearing structure 30 away from the second bearing structure 40, and are used to control the movement of the first bearing structure 30; the second adjusting element M 21 、M 22 and M 23 They are both arranged on a side of the second bearing structure 40 away from the first bearing structure 30 , and are used to control the movement of the second bearing structure 40 .

[0121] In some embodiments, the regulating element is a motor.

[0122] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

Claims

1. A wafer bonding alignment method, characterized in that: include: measuring a distance S0 between a first distance measuring element and a second distance measuring element which are arranged relatively spaced apart from each other in a first direction, wherein the first direction is a direction in which the first distance measuring element points to the second distance measuring element; Control the first supporting structure carrying the first wafer to move to a first position between the first distance measuring element and the second distance measuring element, with the bonding surface of the first wafer facing the second distance measuring element; and control the second distance measuring element to measure n first marking points A1, A2, ..., A on the bonding surface of the first wafer. n The distance S between the second distance measuring element and the first distance measuring element in the first direction 11 , S 12 ,……,S 1n , marking points A1, A2, ..., A n At least three first marking points are not collinear; n is a positive integer greater than or equal to 3; Controlling the first supporting structure carrying the first wafer to move from the first position to an idle position; the idle position and the first position are located in the same plane perpendicular to the first direction; and controlling a second supporting structure carrying a second wafer to move to a second position opposite to the first position, wherein in the first direction, a distance between the second position and the first distance measuring element is greater than a distance between the first position and the first distance measuring element, and a bonding surface of the second wafer faces the first distance measuring element; and controlling the first distance measuring element to measure n second marking points B1, B2, ..., B on the bonding surface of the second wafer. n The distance S between the first distance measuring element and the first distance measuring element in the first direction 21 , S 22 ,……,S 2n , mark points B1, B2, ..., B n At least three of the marking points are not collinear; among them, each second marking point B i With a first marker point A i Correspondingly, i is selected from 1 to n; Control the first supporting structure carrying the first wafer to move from the idle position to the first position, so that the bonding surface of the first wafer faces the bonding surface of the second wafer; wherein each first marking point A i and the corresponding second marking point B i The line between them is parallel to the first direction; Control at least one of the first supporting structure and the second supporting structure to move so that the first wafer and the second wafer move toward each other so that each first marking point A i and the corresponding second marking point B i The distance between them moving towards each other is S 1i +S 2i -S0-S t , i is selected from 1 to n, S t is a preset distance between the first wafer and the second wafer before bonding.

2. The wafer bonding alignment method according to claim 1, characterized in that: The first supporting structure is connected to n first adjustment elements M on one side away from the first wafer. 11 、M 12 ,……,M 1n , the first regulatory element M 1i With the first marking point A i The line between them is parallel to the first direction, i is selected from 1 to n, and n is a positive integer greater than or equal to 3; The controlling at least one of the first supporting structure and the second supporting structure to move so that the first wafer and the second wafer move toward each other comprises: controlling the first adjusting element M 11 、M 12 ,……,M 1n Moving the first wafer so that the first wafer moves toward a direction close to the second wafer; And / or, the second supporting structure is connected to n second adjustment elements M on a side away from the second wafer. 21 、M 22 ,……,M 2n , the second regulatory element M 2i With the second marking point B i The connecting line between is parallel to the first direction, i is selected from 1 to n, and n is a positive integer greater than or equal to 3; the controlling at least one of the first bearing structure and the second bearing structure to move so that the first wafer and the second wafer move toward each other includes: controlling the second adjusting element M 21 、M 22 ,……,M 2n Move the second wafer toward a direction close to the first wafer.

3. The wafer bonding alignment method according to claim 1, characterized in that: The measuring of the spacing S0 in the first direction between the first distance measuring element and the second distance measuring element which are relatively spaced apart comprises: Control the first ranging element to transmit a first ranging signal to the second ranging element, the second ranging element receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the first ranging element, and after receiving the second ranging signal, the first ranging element calculates a distance S0 between the first ranging element and the second ranging element in a first direction according to a time difference between transmitting the first ranging signal and receiving the second ranging signal; or, controlling the second ranging element to transmit a first ranging signal to the first ranging element, the first ranging element receiving the first ranging signal and converting the first ranging signal into a second ranging signal, the second ranging signal being reflected to the second ranging element, and the second ranging element receiving the second ranging signal and calculating the distance S0 between the first ranging element and the second ranging element in the first direction according to the time difference between transmitting the first ranging signal and receiving the second ranging signal; Or, a calibration structure is provided between the first ranging element and the second ranging element, the first ranging element is controlled to transmit a first ranging signal to the calibration structure, the calibration structure receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the first ranging element, the first ranging element calculates the distance d1 between the first ranging element and the calibration structure according to the second ranging signal, the second ranging element is controlled to transmit a third ranging signal to the calibration structure, the calibration structure receives the third ranging signal and converts the third ranging signal into a fourth ranging signal, the fourth ranging signal is reflected to the second ranging element, the second ranging element calculates the distance d3 between the second ranging element and the calibration structure according to the fourth ranging signal, the spacing S0 between the first ranging element and the second ranging element in the first direction is = d1+d2+d3, wherein d3 is the thickness of the calibration structure in the first direction.

4. The wafer bonding alignment method according to claim 3, characterized in that: Before measuring the distance S0 between the first distance measuring element and the second distance measuring element which are arranged relatively spaced apart in the first direction, the method further comprises: The relative positions of the first distance measuring element and the second distance measuring element are calibrated so that a line between a reference point of the first distance measuring element and a reference point of the second distance measuring element is parallel to the first direction.

5. The wafer bonding alignment method according to claim 1, characterized in that: The first direction is a vertically upward direction or a vertically downward direction.

6. The wafer bonding alignment method according to claim 1, characterized in that: The second distance measuring element is controlled to measure n marking points A1, A2, ..., A on the bonding surface of the first wafer. n The distance S between the second distance measuring element and the first distance measuring element in the first direction 11 , S 12 ,……,S 1n include: A second distance measuring element is provided on a side of the bonding surface of the first wafer away from the first distance measuring element, and moves in a first plane perpendicular to the first direction, and the second distance measuring element is controlled to move in sequence in the first plane to the positions corresponding to the marking points A1, A2, ..., A n The corresponding positioning points are P1, P2, ..., P n and controlling the second distance measuring element to measure the marking points A1, A2, ..., A on the bonding surface of the first wafer. n The distance S between the second distance measuring element and the first distance measuring element in the first direction 11 , S 12 ,……,S 1n ; Alternatively, a plurality of second distance measuring elements are provided on a side of the bonding surface of the first wafer away from the first distance measuring element, the plurality of second distance measuring elements are located on the same plane perpendicular to the first direction, and the plurality of second distance measuring elements are respectively connected to the marking points A1, A2, ..., A n Correspondingly, the plurality of second distance measuring elements are controlled to measure the marking points A1, A2, ..., A on the bonding surface of the first wafer respectively. n The distance S between the plurality of second distance measuring elements in the first direction is 11 , S 12 ,……,S 1n .

7. The wafer bonding alignment method according to claim 1, characterized in that: The controlling the first supporting structure carrying the first wafer to move from the idle position to the first position so that the bonding surface of the first wafer faces the bonding surface of the second wafer comprises: Control the first supporting structure carrying the first wafer to move from the idle position to the first position, so that the bonding surface of the first wafer faces the bonding surface of the second wafer, and the distance between the bonding surface of the first wafer and the bonding surface of the second wafer in the first direction is less than or equal to 60μm.

8. A wafer bonding method, characterized in that: The wafer bonding method comprises: Execute the wafer bonding alignment method according to any one of claims 1 to 7 to align the first wafer and the second wafer; Control the driving element connected to the first supporting structure to apply pressure to the supporting surface of the first wafer so that the first wafer moves toward the side close to the second wafer and forms a bonding wave, so that the first wafer and the second wafer are bonded; and / or control the driving element connected to the second supporting structure to apply pressure to the supporting surface of the second wafer so that the second wafer moves toward the side close to the first wafer and forms a bonding wave, so that the first wafer and the second wafer are bonded.

9. A wafer bonding alignment device, characterized in that: include: A first supporting structure, used for supporting a first wafer; A second supporting structure, used for supporting a second wafer; A first distance measuring element and a second distance measuring element arranged opposite to each other, used for measuring distance; A controller is connected to the first supporting structure, the second supporting structure, the first ranging element and the second ranging element, and is used to control the first supporting structure, the second supporting structure, the first ranging element and the second ranging element to perform the wafer bonding alignment method as described in any one of claims 1 to 8.

10. The wafer bonding alignment device according to claim 9, characterized in that: The wafer bonding equipment also includes: A plurality of adjustment elements are arranged on a side of the first bearing structure away from the second bearing structure and / or on a side of the second bearing structure away from the first bearing structure, and are used to control the movement of at least one of the first bearing structure and the second bearing structure.

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