A semiconductor device

Abstract

The application discloses a semiconductor device, and relates to the technical field of semiconductor packaging. In the semiconductor device, two edges of two adjacent conductive pins are spaced apart to form a glue outlet channel; two ends of the glue outlet channel in the length direction of the glue outlet channel are respectively a first glue outlet end and a second glue outlet end; the first glue outlet end and / or the second glue outlet end is formed into a widened end; the glue outlet channel is formed with an expansion section corresponding to the widened end, the expansion section is communicated with the corresponding widened end; and the width of the expansion section gradually increases in the direction towards the corresponding widened end. The application can improve the air tightness of the semiconductor device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor packaging, in particular to a semiconductor device. BACKGROUND

[0002] Metal ceramic packaging has good heat dissipation and insulation, and is often used to prepare semiconductor devices. Generally, the preparation of semiconductor devices by metal ceramic packaging includes a tube shell, conductive pins, a die, a cover plate and packaging glue. The tube shell is provided with a receiving groove, and the end face of the side wall of the receiving groove extending around the opening of the receiving groove is formed into a first annular end face. A plurality of conductive pins are arranged on the first annular end face and are spaced apart around the opening of the receiving groove. The die is arranged in the receiving groove. The cover plate is arranged on the receiving groove; and the packaging glue is arranged between the conductive pins and the cover plate and between the spaced apart conductive pins.

[0003] However, the existing semiconductor device products prepared by metal ceramic packaging often have abnormal air tightness when air tightness detection is performed. Therefore, how to improve the air tightness of semiconductor devices is still a technical problem to be solved by those skilled in the art. SUMMARY

[0004] Therefore, in order to solve the above technical problems, the present application provides a semiconductor device.

[0005] To achieve the above-mentioned purpose, the present application provides a semiconductor device, which comprises:

[0006] a tube shell provided with a receiving groove, the receiving groove being provided with a die; the end face of the side wall of the receiving groove extending around the opening of the receiving groove is formed into a first annular end face;

[0007] a plurality of conductive pins arranged on the first annular end face and spaced apart around the opening of the receiving groove; the two edges of adjacent two conductive pins are spaced apart to form a glue outlet channel;

[0008] and a cover plate and packaging glue, the cover plate being arranged on the receiving groove, and the packaging glue being arranged between the conductive pins and the cover plate and in the glue outlet channel;

[0009] wherein the two ends of the glue outlet channel along the length direction of the glue outlet channel are respectively a first glue outlet end and a second glue outlet end; the first glue outlet end and / or the second glue outlet end is formed into a widened end; the glue outlet channel is formed with an expansion section corresponding to the widened end, the expansion section being communicated with the corresponding widened end; and the width of the expansion section gradually increases in the direction towards the corresponding widened end.

[0010] Beneficial effects: Different from the prior art, the application can improve the flowability of the packaging glue in the glue outlet channel in the process of preparing the semiconductor device by setting the widened end and the corresponding expansion section in the glue outlet channel, thereby improving the overflow effect of the packaging glue through the glue outlet channel, making the packaging glue more fully fill the glue outlet channel in the overflow process, and thereby improving the air tightness of the semiconductor device. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 is a sectional structure schematic diagram of the semiconductor device of the embodiment one of the application;

[0012] Figure 2 is Figure 1 is a labeling schematic diagram of the first region and the second region in the semiconductor device;

[0013] Figure 3 is a schematic diagram of one perspective of the assembled structure of the tube shell, the solder pad layer and the conductive pin of the semiconductor device of the embodiment one of the application;

[0014] Figure 4 is a schematic diagram of another perspective of the assembled structure of the tube shell, the solder pad layer and the conductive pin of the semiconductor device of the embodiment one of the application;

[0015] Figure 5 is Figure 4 is an enlarged schematic diagram of the region A in the semiconductor device;

[0016] Figure 6 is Figure 4 is a marking schematic diagram of the region where the glue outlet channel is located in the semiconductor device, Figure 6 the region where the glue outlet channel is located in the semiconductor device is a pattern-filled region;

[0017] Figure 7 is Figure 4 is a marking schematic diagram of the region where one expansion section is located in the semiconductor device, Figure 7 the region where the expansion section is located in the semiconductor device is a pattern-filled region;

[0018] Figure 8 is Figure 4 is a marking schematic diagram of the region where another expansion section is located in the semiconductor device, Figure 8 the region where the expansion section is located in the semiconductor device is a pattern-filled region;

[0019] Figure 9 is Figure 4 is a marking schematic diagram of the region where the communication part is located in the semiconductor device, Figure 9 the region where the communication part is located in the semiconductor device is a pattern-filled region;

[0020] Figure 10 is Figure 4 is a marking schematic diagram of the first end point and the second end point in the semiconductor device;

[0021] Figure 11is Figure 4 a size annotation diagram of the semiconductor device of the embodiment three of the present application;

[0022] Figure 12 is a partial structure diagram of a semiconductor device of the embodiment three of the present application;

[0023] Figure 13 is a partial structure diagram of a semiconductor device of the embodiment four of the present application;

[0024] Figure 14 is a partial structure diagram of a first semiconductor device;

[0025] Figure 15 is a packaging effect diagram of the first semiconductor device;

[0026] Figure 16 is a packaging effect diagram of a second semiconductor device;

[0027] semiconductor device 1; tube shell 10; accommodating groove 11; heat sink plate 12; ceramic insulating ring 13; first annular end face 14; inner ring edge 14-1; outer ring edge 14-2; groove 15; second annular end face 16; cavity 17; conductive pin 20; connecting part 21; extension part 22; protruding end 23; die 30; cover plate 40; encapsulating glue 50; bonding wire 60; solder pad layer 70; first gap 71; glue outlet channel 100; first glue outlet end 110; communication part 120; communication opening 120a; communication section 120b; second glue outlet end 130; widened end 140; expansion section 150; first expansion section 150a; second expansion section 150b; first edge 200; second edge 300; expansion edge 41; first end point B1; second end point B2; connection edge 42; first region P1; second region P2; first distance d1; length of expansion section d2; first length s1; first width w1; second width w2; third width w3; fourth width w4; first semiconductor device 1a; second semiconductor device 1b. DETAILED DESCRIPTION

[0028] In order for those skilled in the art to better understand the technical solutions of the present application, the present application will be further described in detail below in combination with the drawings and specific embodiments. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor shall fall within the scope of protection of the present application.

[0029] The inventors find that in the prior semiconductor device prepared by adopting the metal ceramic packaging, the sealing between the two adjacent conductive pins is poor, which leads to the problem that the air tightness of the semiconductor device is often detected to be abnormal during the air tightness detection. In order to solve the above technical problems, the inventors of the present application propose the following embodiments.

[0030] It should be noted that for any numerical values x1 and x2, x2>x1 is satisfied, and x1-x2 in the following represents not less than x1 and not more than x2.

[0031] Embodiment one

[0032] Please refer to Figures 1-10 The semiconductor device 1 of the embodiment includes a tube shell 10, a die 30, a conductive pin 20, a cover plate 40 and a packaging glue 50.

[0033] The tube shell 10 is provided with a receiving groove 11, and the receiving groove 11 is provided with the die 30. The side wall of the receiving groove 11 extends around the end face of the opening of the receiving groove 11 to form a first annular end face 14. A plurality of conductive pins 20 are arranged on the first annular end face 14 and are spaced around the opening of the receiving groove 11. The two edges of the adjacent two conductive pins 20 are spaced apart to form a glue outlet channel 100. The cover plate 40 is arranged on the receiving groove 11. The packaging glue 50 is arranged between the conductive pin 20 and the cover plate 40 and in the glue outlet channel 100.

[0034] Among them, the two ends of the glue outlet channel 100 along the length direction of the glue outlet channel 100 are respectively a first glue outlet end 110 and a second glue outlet end 130. The first glue outlet end 110 and / or the second glue outlet end 130 form a widened end 140. The glue outlet channel 100 forms an expansion section 150 corresponding to the widened end 140, and the expansion section 150 communicates with the corresponding widened end 140. And along the direction towards the corresponding widened end 140, the width of the expansion section 150 gradually expands.

[0035] In the above manner, during the preparation of the semiconductor device 1, the packaging glue 50 still has fluidity when the cover plate 40 is pressed to the tube shell 10, and the widened end 140 of the embodiment can improve the fluidity of the packaging glue 50 in the glue outlet channel 100, thereby improving the overflow effect of the packaging glue 50 through the glue outlet channel 100, so that the packaging glue 50 can more fully fill the glue outlet channel 100 during overflow, thereby improving the air tightness of the semiconductor device 1.

[0036] Optionally, viewed from the side of the conductive pin 20 away from the first annular end face 14 to the first annular end face 14, the annulus of the first annular end face 14 can be a rectangular ring, an elliptical ring, a circular ring, a triangular ring, a sector ring, a trapezoidal ring, or other regular or irregular annulus.

[0037] For ease of illustration, the following takes the annular of the first annular end surface 14 as a rectangular ring as an example, at this time, the opening of the accommodating groove 11 is rectangular when viewed from the side of the conductive pin 20 away from the first annular end surface 14 to the accommodating groove 11. Among them, a plurality of conductive pins 20 can be distributed in the first annular end surface 14 located in the region of the two pairs of edges of the rectangular opening of the accommodating groove 11, but not limited thereto.

[0038] It can be understood that after the packaging glue 50 flows into the glue outlet channel 100, as the cover plate 40 continues to be pressed to the tube shell 10, the packaging glue 50 between the cover plate 40 and the first annular end surface 14 is extruded, and part of the packaging glue 50 will flow out through the glue outlet channel 100, which makes the packaging glue 50 more fully fill the glue outlet channel 100. It should be noted that in the subsequent process of preparing the semiconductor device 1, the packaging glue 50 with fluidity will solidify to form the packaging glue 50 without fluidity, so that the packaging glue 50 in the semiconductor device 1 finally prepared is the packaging glue 50 after solidification.

[0039] Optionally, as shown in Figures 1-10 The semiconductor device 1 includes a bonding wire 60, and the side of the cover plate 40 facing the accommodating groove 11 is provided with a groove 15, and the end surface of the side wall of the groove 15 extending around the opening of the groove 15 is formed as a second annular end surface 16.

[0040] Among them, the first annular end surface 14 has an inner ring edge 14-1 close to the accommodating groove 11 and an outer ring edge 14-2 away from the accommodating groove 11. The part of the conductive pin 20 covering the first annular end surface 14 has a first region P1 close to the inner ring edge 14-1 and a second region P2 away from the inner ring edge 14-1. The groove 15 communicates with the accommodating groove 11 to form a cavity 17. The second annular end surface 16 is provided corresponding to the first annular end surface 14 and covers the second region P2 of the conductive pin 20, and the first region P1 of the conductive pin 20 is located in the cavity 17. The die 30 is bonded to the first region P1 of the conductive pin 20 through the bonding wire 60.

[0041] In the above manner, the bonding wire 60, the die 30 and the first region P1 of the conductive pin 20 are all located in the cavity, and the position between the first annular end surface 14 and the second annular end surface 16 is sealed by the packaging glue 50 between the second region P2 of the conductive pin 20 and the second annular end surface 16 and the packaging glue 50 in the glue outlet channel 100. In this way, when the cover plate 40 is pressed to the tube shell 10, the second annular end surface 16 can be avoided from the bonding wire 60, so that the bonding wire 60 can be avoided from being broken by the second annular end surface 16.

[0042] It should be noted that, in the process of preparing the semiconductor device 1, the encapsulation adhesive 50 is arranged on the second annular end surface 16 of the cover plate 40 in a ring-shaped and continuous manner before the cover plate 40 is pressed to the tube shell 10, and the encapsulation adhesive 50 arranged on the second annular end surface 16 is in contact with the second region P2 and avoids the first region P1 when the cover plate 40 is pressed to the tube shell 10.

[0043] By way of example, and not limitation, as Figures 1-11 illustrated, the width of the widened end 140 is a second width w2, and the second width w2 is 0.5-5 mm.

[0044] It should be noted that, by the above-mentioned manner, at least the following two aspects have beneficial effects. First, since the second width is not greater than 5 mm, the second region P2 of the connecting portion 21 is in contact with the encapsulation adhesive 50, and the connecting portion 21 still has a sufficient first region P1 for bonding with the bonding wire 60. Second, since the second width is not less than 0.5 mm, the encapsulation adhesive 50 in the glue outlet channel 100 is more likely to flow out through the corresponding widened end 140 under the guidance of the expansion section 150 when the cover plate 40 is pressed to the tube shell 10 in the process of preparing the semiconductor device 1, so that the glue outlet channel is sufficiently filled with the encapsulation adhesive 50, thereby the encapsulation adhesive 50 has better sealing performance after solidification. Preferably, the second width w2 is 1-2 mm.

[0045] Optionally, the die 30 includes, but is not limited to, an active element or a passive element. The active element includes, but is not limited to, one or more of a transistor, a microprocessor, a memory, and a radio frequency chip. The passive element includes, but is not limited to, one or more of a capacitor, an inductor, and a resistor.

[0046] Optionally, as Figures 1-10 illustrated, the two edges of the two adjacent conductive pins 20 adjacent to each other are a first edge 200 and a second edge 300, respectively.

[0047] The first edge 200 and the second edge 300 are both formed with an expansion edge 41, wherein the edges on both sides of the expansion section 150 along the width direction of the glue outlet channel 100 are composed of the expansion edges 41 in both the first edge 200 and the second edge 300. By the above-mentioned manner, in the process of preparing the semiconductor device 1, the encapsulation adhesive 50 flowing into the glue outlet channel 100 can fill the expansion section 150 by adapting to the width change of the expansion section 150 under the guidance of the expansion edge 41.

[0048] Optionally, as Figures 1-10 illustrated, the expansion edge 41 includes any one or a combination of both of a beveled edge and a curved edge, so that the width of the expansion section 150 gradually expands in the direction towards the corresponding widened end 140.

[0049] By way of example but not limitation, in a first example, the expansion edge 41 can be a beveled edge. In a second example, the expansion edge 41 can be a curved edge. Optionally, in this second example, the curved edge used as the expansion edge 41 can be a circular arc edge. Optionally, in this second example, the curved edge used as the expansion edge 41 can be other curved edges that are not circular arc. In a third example, the expansion edge 41 can be a combination of a beveled edge and a curved edge.

[0050] Optionally, as shown in FIG. 1, the length of the glue outlet channel 100 is a first length s1, and the first length s1 is 1-2 mm. By way of example but not limitation, the first length s1 includes but is not limited to 1.00 mm, 1.50 mm, or 2.00 mm. Figures 1-11

[0051] It should be noted that by the above-mentioned manner, at least the following two aspects have beneficial effects. The first aspect is that since the first length s1 is not greater than 2 mm, the volume of the packaging glue 50 required to fill the glue outlet channel 100 is reduced. In this way, the use amount of the packaging glue 50 can be reduced, and the reduction of the use amount of the packaging glue 50 is conducive to reducing the process difficulty of packaging. The second aspect is that since the first length s1 is not less than 1 mm, after the second region P2 of the connecting portion 21 contacts the packaging glue 50, the connecting portion 21 still has a sufficient first region P1 for bonding with the bonding wire 60.

[0052] Further, the first length s1 is 1.25-1.45 mm. By way of example but not limitation, the first length s1 includes but is not limited to 1.25 mm, 1.35 mm, or 1.45 mm.

[0053] As shown in FIG. 1, the expansion edge 41 sequentially connects a first end point B1 and a second end point B2 from one end of the expansion section 150 away from the corresponding widened end 140 to one end of the expansion section 150 close to the corresponding widened end 140. Figures 1-11

[0054] wherein the distance between the first end point B1 and the second end point B2 along the width direction of the glue outlet channel 100 is a first distance d1, and the first distance d1 is not greater than 1 mm.

[0055] By the above-mentioned manner, at least the following two aspects have beneficial effects. The first aspect is that since the first distance d1 is not greater than 1 mm, the volume of the packaging glue 50 required to fill the glue outlet channel 100 is reduced. In this way, the use amount of the packaging glue 50 can be reduced, and the reduction of the use amount of the packaging glue 50 is conducive to reducing the process difficulty of packaging. The second aspect is that since the first distance d1 is not greater than 1 mm, after the second region P2 of the connecting portion 21 contacts the packaging glue 50, the connecting portion 21 still has a sufficient first region P1 for bonding with the bonding wire 60.

[0056] Optionally, as shown in FIG. 1, the length of the glue outlet channel 100 is a first length s1, and the first length s1 is 1-2 mm. By way of example but not limitation, the first length s1 includes but is not limited to 1.00 mm, 1.50 mm, or 2.00 mm. Figures 1-11 ​​As shown, the length d2 of the expansion section 150 is the distance between the first end point B1 and the second end point B2 along the length direction of the glue outlet channel 100. The ratio of the first distance d1 to the length d2 of the expansion section 150 is a second ratio, and the second ratio is 1:3~2:1.

[0057] It should be noted that, considering that the first length s1 of the glue outlet channel 100 is limited, if the second ratio is too large, the first distance d1 is too small, and the packaging glue 50 in the glue outlet channel 100 is difficult to flow out of the widened end 140. Preferably, the second ratio is 1:2~1:1. More preferably, the second ratio is 1:2~1:1.1. For example, the second ratio includes but is not limited to 1:1.2.

[0058] Optionally, in combination with Figures 1-9 , referring to Figures 10-11 As shown, the ratio of the length d2 of the expansion section 150 to the first length s1 is a first ratio, and the first ratio is not less than 0.2.

[0059] In the above manner, since the first ratio is not less than 0.2, under the condition that the first length s1 of the glue outlet channel 100 is limited, the expansion section 150 has sufficient length to facilitate the flow of the packaging glue 50 out of the widened end 140 when the cover plate 40 is pressed to the tube shell 10 during the preparation of the semiconductor device 1.

[0060] Optionally, in combination with Figures 1-9 , referring to Figures 10-11 As shown, the width of the end of the expansion section 150 away from the corresponding widened end 140 is a first width w1, and the first width w1 is not less than 0.1 mm. It should be noted that if the first width w1 is less than 0.1 mm, it is not conducive to the flow of the packaging glue 50 when the cover plate 40 is pressed to the tube shell 10 during the preparation of the semiconductor device 1.

[0061] Optionally, in combination with Figures 1-9 , referring to Figures 10-11 As shown, the first width w1 is not greater than 2 mm. It should be noted that if the first width w1 is greater than 2 mm, in order to make the packaging glue 50 fill the glue outlet channel 100, the amount of the packaging glue 50 used increases, the packaging glue 50 between the second annular end face 16 and the first annular end face 14 increases when the cover plate 40 is pressed to the tube shell 10 during the preparation of the semiconductor device 1, and the process difficulty of packaging is increased. Preferably, the first width w1 can be 0.3mm~2mm.

[0062] Optionally, in order to make more conductive pins 20 be arranged on the first annular end face 14 or realize the miniaturization of the semiconductor device 1, the first width w1 can be 0.3mm~0.5mm.

[0063] Optionally, asFigures 1-10 As shown, the conductive pin 20 comprises a connecting portion 21 and an extending portion 22; the connecting portion 21 is arranged on the first annular end face 14, and the extending portion 22 extends from the connecting portion 21 to the side of the outer ring edge 14-2 away from the inner ring edge 14-1.

[0064] The first region P1 and the second region P2 are located on the connecting portion 21. The connecting portion 21 is formed with a protruding end 23 protruding relative to the extending portion 22 along the direction around the accommodating groove 11 at each end thereof. The two edges of the opposite two protruding ends 23 of the adjacent two conductive pins 20 form the glue outlet channel 100.

[0065] In the above manner, the glue outlet channel 100 is formed by the two edges of the opposite two protruding ends 23 of the adjacent two conductive pins 20, which can greatly reduce the length of the glue outlet channel 100, thereby being conducive to improving the flowability of the packaging glue 50 in the glue outlet channel 100 during the process of preparing the semiconductor device 1. The protruding end 23 increases the overall length of the connecting portion 21 along the direction around the accommodating groove 11, so that the first region P1 of the connecting portion 21 has sufficient length for use as a connection position of the bonding wire 60, thereby increasing the region of the conductive pin 20 that can be used for connection with the bonding wire 60.

[0066] Optionally, as shown in the first embodiment, Figures 1-10 The tube shell 10 comprises a heat sink plate 12 and a ceramic insulating ring 13, and the ceramic insulating ring 13 is arranged on the heat sink plate 12 to enclose the accommodating groove 11. The first annular end face 14 is an end face of the ceramic insulating ring 13 extending around the opening of the accommodating groove 11.

[0067] The tube shell 10 assembly comprises a solder pad layer 70, and the solder pad layer 70 is arranged between each conductive pin 20 and the first annular end face 14. In this way, at least the following two technical effects are achieved.

[0068] Firstly, the solder pad layer 70 can enhance the welding of the conductive pin 20 to the ceramic insulating ring 13, thereby enhancing the connection strength between the conductive pin 20 and the ceramic insulating ring 13. Secondly, the heat sink plate 12 can timely conduct the heat in the die 30 and spread the heat to the outside of the semiconductor device 1.

[0069] Optionally, the solder pad layer 70 comprises, but is not limited to, a molybdenum layer. Optionally, as shown in the first embodiment, Figures 1-11 The solder pad layers 70 below the adjacent two conductive pins 20 are arranged with a first gap 71 therebetween, and the side of the first gap 71 away from the first annular end face 14 is in communication with the glue outlet channel 100. The width of the first gap 71 is a third width w3, and the third width w3 is not greater than the first width w1. Preferably, the third width w3 is less than the first width w1, and the first width w1 is less than the second width w2.

[0070] Optionally, as shown in Figures 1-11 Further, the third width can be 0.1-2mm.

[0071] The third width w3 can be 0.3-0.5mm. In this way, not only can the adjacent solder pad layers 70 be insulated and separated, but also the encapsulation glue 50 can be filled into the first gap 71. By way of example but not limitation, the third width w3 includes but is not limited to 0.3mm, 0.4mm or 0.5mm.

[0072] Embodiment Two

[0073] Referring to Figures 1-11 Embodiment Two is further limited based on Embodiment One. The same parts of Embodiment Two as Embodiment One will not be repeated, and the further limitation of Embodiment Two compared to Embodiment One is as follows.

[0074] Optionally, as shown in Figures 1-11 The outflow channel 100 is formed with a communication part 120, and one end of the expansion section 150 away from the corresponding widened end 140 communicates with the communication part 120. The width of the communication part 120 is a fourth width w4, and the width of the widened end 140 is a second width w2, and the fourth width w4 is less than the second width w2.

[0075] In the above manner, during the process of processing and preparing the semiconductor device 1, as the cover plate 40 is pressed to the tube shell 10, the encapsulation glue 50 with fluidity is extruded, so that the encapsulation glue 50 continuously flows into the outflow channel 100, and as the encapsulation glue 50 continuously flows into the outflow channel 100, under the guidance of the expansion edge 41, the encapsulation glue 50 in the outflow channel 100 flows from the communication part 120 to the widened end 140, so that the encapsulation glue 50 is more fully filled in the communication part 120, the expansion section 150 and the widened end 140.

[0076] Optionally, as shown in Figures 1-11 In this way, during the process of processing and preparing the semiconductor device 1, as the cover plate 40 is pressed to the tube shell 10, the encapsulation glue 50 can smoothly transition from the communication part 120 to the expansion section 150.

[0077] Optionally, as shown in Figures 1-11As shown, the first glue outlet end 110 is towards the inner ring edge, and the second glue outlet end 130 is towards the outer ring edge. The first glue outlet end 110 and the second glue outlet end 130 are both formed as widened ends 140. The widened end 140 of the first glue outlet end 110 corresponds to a first expansion section 150a. The widened end 140 of the second glue outlet end 130 corresponds to a second expansion section 150b. The first expansion section 150a and the second expansion section 150b are arranged in a spaced manner, and the communication part 120 is located between the first expansion section 150a and the second expansion section 150b, and the communication part 120 is formed as a communication section 120b, and the communication section 120b respectively communicates the first expansion section 150a and the second expansion section 150.

[0078] In the above manner, the first glue outlet end 110 and the second glue outlet end 130 are both formed as widened ends 140. Thus, in the process of processing and preparing the semiconductor device 1, as the packaging glue 50 continuously flows into the glue outlet channel 100, the packaging glue 50 in the glue outlet channel 100 can simultaneously realize first flow and second flow. The first flow includes flowing from the communication section 120b to the first glue outlet end 110 under the guidance of the expansion edge 41 of the first expansion section 150a. The second flow includes flowing from the communication section 120b to the second glue outlet end 130 under the guidance of the expansion edge 41 of the second expansion section 150b. Thus, the packaging glue 50 can more fully fill the communication section 120b, the first expansion section 150a, the widened end 140 of the first glue outlet end 110, the second expansion section 150b, and the widened end 140 of the second glue outlet end 130.

[0079] It should be noted that the width of the communication part 120 is the width of the communication section 120b, that is, the width of the communication section 120b is a fourth width w4.

[0080] Optionally, as shown, Figures 1-11 As shown, the first edge 200 and the second edge 300 are both formed with a joint edge 42. The edges on both sides of the communication section 120b along the width direction of the glue outlet channel 100 are formed by the joint edges 42 of the first edge 200 and the second edge 300. The joint edge 42 of the first edge 200 can be arranged in parallel with the joint edge 42 of the second edge 300.

[0081] By the above manner, since the connecting edge 42 of the first edge 200 and the connecting edge 42 of the second edge 300 are arranged in parallel, the width of the communication section 120b is equal along the length direction of the glue outlet channel 100, and the encapsulation glue 50 flowing into the communication section 120b can be more evenly distributed to realize the first flow and the second flow. The first flow includes flowing from the communication section 120b to the first glue outlet end 110 under the guidance of the expanding edge 41 of the first expanding section 150a. The second flow includes flowing from the communication section 120b to the second glue outlet end 130 under the guidance of the expanding edge 41 of the second expanding section 150b.

[0082] Optionally, as shown in Figures 1-11 , in order to facilitate the flow of the encapsulation glue 50 in the glue outlet channel 100, the expanding edge 41 of any one of the first edge 200 and the second edge 300 is smoothly connected to the connecting edge 42.

[0083] Embodiment three

[0084] Comparison Figure 12 , refer to Figures 1-11 , embodiment three is deformed from embodiment two. The same parts of embodiment three and embodiment two are not repeated, and the differences between embodiment three and embodiment two are as follows.

[0085] Optionally, in comparison Figure 12 , refer to Figures 1-11 , the first expanding section 150a and the second expanding section 150b are directly communicated, the communication part 120 is located between the first expanding section 150a and the second expanding section 150b, and the communication part 120 is formed as a communication port 120a at the communication part of the first expanding section 150a and the second expanding section 150b. The communication port 120a respectively communicates the first expanding section 150a and the second expanding section 150b.

[0086] It should be noted that the width of the communication part 120 is the width of the communication port 120a, that is, the width of the communication port 120a is the fourth width w4.

[0087] Embodiment four

[0088] Comparison Figure 13 , refer to Figures 1-11 , embodiment four is deformed from embodiment one. The same parts of embodiment four and embodiment one are not repeated, and the differences between embodiment four and embodiment one are as follows.

[0089] The first glue outlet end 110 faces the inner ring edge 14-1, and the second glue outlet end 130 faces the outer ring edge 14-2. Among them, the first glue outlet end 110 does not form a widened end 140, and the second glue outlet end 130 does not form a widened end 140.

[0090] By the above manner, in the process of preparing the semiconductor device 1, when the cover plate 40 is pressed to the tube shell 10, under the guidance of the expansion section 150 corresponding to the widened end 140 of the second glue outlet end 130, the proportion of the encapsulation glue 50 in the flowable encapsulation glue 50 in the glue outlet channel 100 that can be divided into the encapsulation glue 50 realizing the third flow is reduced, so that the proportion of the encapsulation glue 50 in the flowable encapsulation glue 50 in the glue outlet channel 100 that can be divided into the encapsulation glue 50 realizing the fourth flow is increased. The third flow includes flowing towards the first glue outlet end 110. The fourth flow includes flowing towards the second glue outlet end 130. In this way, in the process of preparing the semiconductor device 1, when the cover plate 40 is pressed to the tube shell 10, the proportion of the encapsulation glue 50 in the glue outlet channel 100 flowing into the accommodating groove 11 is reduced, and the proportion flowing out of the second glue outlet end 130 is increased, so as to be able to enhance the filling and sealing effect of the encapsulation glue 50 on the expansion section 150 corresponding to the widened end 140 of the second glue outlet end 130 and the widened end 140 of the second glue outlet end 130.

[0091] Optionally, in comparison Figure 13 , as shown in Figures 5-9 , the expansion section 150 corresponding to the widened end 140 of the second glue outlet end 130 is a second expansion section 150b. Along the direction towards the widened end 140 of the second glue outlet end 130, the second expansion section 150b extends from the first glue outlet end 110 to the second glue outlet end 130. In this way, the filling and sealing effect of the encapsulation glue 50 on the second expansion section 150b and the widened end 140 of the second glue outlet end 130 can be greatly enhanced.

[0092] Control experiment

[0093] Take a first semiconductor device 1a and a second semiconductor device 1b, wherein the first semiconductor device 1a is a semiconductor device in the prior art, and the second semiconductor device 1b is the above-mentioned semiconductor device 1 of the embodiment. For example, the second semiconductor device 1b is the semiconductor device 1 in the above-mentioned embodiment two of the embodiment. The same parts of the first semiconductor device 1a and the second semiconductor device 1b are not described, and the different parts of the first semiconductor device 1a and the second semiconductor device 1b are that, in comparison Figure 14 , as shown in Figure 15 , the glue outlet channel 100 of the first semiconductor device 1a does not form a widened end 140. Among them, respectively from the side of the first semiconductor device 1a and the second semiconductor device 1b, respectively Figure 16 and Figure 15 are obtained.

[0094] As shown in Figure 15 , the encapsulation glue 50 in the glue outlet channel 100 of the first semiconductor device 1a has a clear layering with the ceramic insulating ring 13, and the layering is as shown in Figure 15The first semiconductor device 1a has obvious unfilled portions on both sides of the glue outlet channel 100 along the width direction of the glue outlet channel 100, as shown by the dotted line circle. Figure 16 The second semiconductor device 1b has no obvious delamination between the encapsulation glue 50 and the ceramic insulation ring 13 in the glue outlet channel 100, and has no obvious unfilled portions on both sides of the glue outlet channel 100 along the width direction of the glue outlet channel 100, as shown by the dotted line circle. ​ The second semiconductor device 1b has no obvious delamination between the encapsulation glue 50 and the ceramic insulation ring 13 in the glue outlet channel 100, and has no obvious unfilled portions on both sides of the glue outlet channel 100 along the width direction of the glue outlet channel 100, as shown by the dotted line circle.

[0095] Obviously, the widened end 140 of the semiconductor device 1 of the embodiment can improve the flowability of the encapsulation glue 50, and further improve the overflow effect of the encapsulation glue 50 through the glue outlet channel 100, so that the encapsulation glue 50 can more fully fill the glue outlet channel 100 in the overflow process, and further improve the air tightness of the semiconductor device 1.

[0096] The above is only the implementation of the embodiment, and does not limit the patent scope of the embodiment. Any equivalent structure or equivalent process transformation using the content of the specification and drawings of the embodiment, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the embodiment.

Claims

1. A semiconductor device, characterized by, The semiconductor device comprises: a tube shell provided with a receiving groove, the receiving groove is provided with a die; the end face of the side wall of the receiving groove extending around the opening of the receiving groove is formed into a first annular end face; a plurality of conductive pins are arranged on the first annular end face and are spaced around the opening of the receiving groove; the edges of two adjacent conductive pins are spaced apart to form a glue channel; and a cover plate and a packaging glue, the cover plate is covered on the receiving groove, and the packaging glue is arranged between the conductive pins and the cover plate and in the glue channel; wherein the two ends of the glue channel along the length direction of the glue channel are respectively a first glue outlet end and a second glue outlet end; the first glue outlet end and / or the second glue outlet end is formed into a widened end; the glue channel corresponds to the widened end to form an expansion section, the expansion section communicates with the corresponding widened end; and in the direction towards the corresponding widened end, the width of the expansion section gradually expands.

2. The semiconductor device according to claim 1, wherein The length of the glue channel is a first length, the ratio of the length of the expansion section to the first length is a first ratio, and the first ratio is not less than 0.

2.

3. The semiconductor device according to claim 2, wherein The first length is 1.00-2mm.

4. The semiconductor device of claim 1, wherein The width of one end of the expansion section away from the corresponding widened end is a first width, and the first width is not less than 0.1mm.

5. The semiconductor device of claim 4, wherein, The first width is not greater than 2mm.

6. The semiconductor device according to claim 5, wherein The width of the widened end is a second width, and the second width is 0.5-5mm.

7. The semiconductor device of claim 1, wherein The first annular end face has an inner ring edge close to the receiving groove and an outer ring edge away from the receiving groove; the first glue outlet end faces the inner ring edge, and the second glue outlet end faces the outer ring edge; wherein the first glue outlet end is not formed into the widened end, and the second glue outlet end is formed into the widened end.

8. The semiconductor device of claim 7, wherein, The widened end of the second glue outlet end corresponds to the expansion section, which is a second expansion section; in the direction towards the widened end of the second glue outlet end, the second expansion section extends from the first glue outlet end to the second glue outlet end.

9. The semiconductor device of claim 1, wherein, The first annular end face has an inner ring edge close to the receiving groove and an outer ring edge away from the receiving groove; the first glue outlet end faces the inner ring edge, and the second glue outlet end faces the outer ring edge; wherein the first glue outlet end and the second glue outlet end are both formed into the widened end; the widened end of the first glue outlet end corresponds to the expansion section, which is a first expansion section; the widened end of the second glue outlet end corresponds to the expansion section, which is a second expansion section; the first expansion section and the second expansion section are directly communicated, so that a communication port is formed in the glue channel at the communication of the first expansion section and the second expansion section, and the communication port respectively communicates the first expansion section and the second expansion section.

10. The semiconductor device of claim 1, wherein The glue channel is formed with a communication section, one end of the expansion section away from the corresponding widened end communicates with the communication section; the width of the communication section is a fourth width, the width of the widened end is a second width, and the fourth width is smaller than the second width.

11. The semiconductor device of claim 10, wherein, The first annular end face has an inner ring edge close to the accommodating groove and an outer ring edge away from the accommodating groove; the first glue outlet end faces the inner ring edge, and the second glue outlet end faces the outer ring edge; The first glue outlet end and the second glue outlet end are both formed as the widened end; the widened end of the first glue outlet end corresponds to a first expansion section; the widened end of the second glue outlet end corresponds to a second expansion section; the first expansion section and the second expansion section are arranged in a spaced manner, and the communication section is located between the first expansion section and the second expansion section and respectively communicates the first expansion section and the second expansion section.

12. The semiconductor device of claim 1, wherein Two edges adjacent to the two adjacent conductive pins are a first edge and a second edge respectively; The first edge and the second edge are both formed with an expansion edge, wherein the expansion edges of the first edge and the second edge constitute the edges of the expansion section on both sides in the width direction of the glue outlet channel; the expansion edge includes any one or a combination of both of the beveled edge and the curved edge, so that the width of the expansion section gradually expands in the direction towards the corresponding widened end.

13. The semiconductor device of claim 12, wherein, The glue outlet channel is formed with a communication section, one end of the expansion section away from the corresponding widened end communicates with the communication section; the width of the communication section is a fourth width, the width of the widened end is a second width, and the fourth width is less than the second width; the first edge and the second edge are both formed with a joint edge; The communication section is constituted by the joint edges of the first edge and the second edge on both sides in the width direction of the glue outlet channel; the joint edges of the first edge and the second edge are arranged in parallel.

14. The semiconductor device of claim 13, wherein, In any one of the first edge and the second edge, the expansion edge smoothly transitions to the joint edge.

15. The semiconductor device of claim 12, wherein, From one end of the expansion section away from the corresponding widened end to one end of the expansion section close to the corresponding widened end, the expansion edge sequentially connects a first end point and a second end point; The distance between the first end point and the second end point in the width direction of the glue outlet channel is a first distance, and the first distance is not greater than 1 mm.

16. The semiconductor device of claim 12, wherein, From one end of the expansion section away from the corresponding widened end to one end of the expansion section close to the corresponding widened end, the expansion edge sequentially connects a first end point and a second end point; The distance between the first end point and the second end point in the width direction of the glue outlet channel is a first distance, and the length of the expansion section is the distance between the first end point and the second end point in the length direction of the glue outlet channel; the ratio of the first distance to the length of the expansion section is a second ratio, and the second ratio is 1:3~2:

1.

17. The semiconductor device of claim 1, wherein The semiconductor device includes a bonding wire; one side of the cover plate facing the accommodating groove is provided with a groove, and the end face of the side wall of the groove extending around the opening of the groove is formed as a second annular end face; The first annular end face has an inner ring edge close to the accommodating groove and an outer ring edge away from the accommodating groove; a portion of the conductive pin covering the first annular end face has a first area close to the inner ring edge and a second area away from the inner ring edge; the groove is in communication with the accommodating groove to form a cavity; the second annular end face is arranged corresponding to the first annular end face and covers the second area of the conductive pin, and the first area of the conductive pin is located in the cavity; the die is bonded with the first area of the conductive pin through the bonding wire.

18. The semiconductor device of claim 17, wherein, The conductive pin comprises a connecting portion and an extending portion; the connecting portion is arranged at the first annular end face, and the extending portion extends from the connecting portion to a side of the outer ring edge away from the inner ring edge; The first area and the second area are located in the connecting portion; the connecting portion is formed into a protruding end protruding relative to the extending portion along the direction around the accommodating groove at two ends along the direction around the accommodating groove; two edges opposite to the two protruding ends of two adjacent conductive pins constitute the glue outlet channel.

19. The semiconductor device of claim 1, wherein, The shell comprises a heat sink plate and a ceramic insulation ring arranged on the heat sink plate to enclose the accommodating groove; the first annular end face is an end face of the ceramic insulation ring extending around an opening of the accommodating groove; The shell assembly comprises a welding pad layer, and the welding pad layer is arranged between each conductive pin and the first annular end face; the welding pad layers under two adjacent conductive pins are arranged in a spaced manner to form a first gap; a side of the first gap away from the first annular end face is in communication with the glue outlet channel; a width of one end of the expanding section away from the corresponding widened end is a first width, and a width of the first gap is a third width; the third width is not greater than the first width, and the third width is 0.1-2 mm.

Images