Display device and method for manufacturing display device

Abstract

The invention relates to a display device and a method for manufacturing the same. The display device includes a base layer, a circuit layer, a pixel defining layer having a plurality of pixel openings defined in the pixel defining layer, and a plurality of light emitting elements each including a hole transport region, an emission layer, and an electron transport region sequentially stacked and on the circuit layer, and a light-emitting element including an inorganic light-emitting element including an inorganic light-emitting body in the emission layer and an organic light-emitting element including an organic light-emitting body in the emission layer, and the inorganic light-emitting element or the organic light-emitting element includes a protective layer between the emission layer and the electron transport region and including a polar polymer, thereby exhibiting improved luminous efficiency.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0106734 filed in the Korean Intellectual Property Office on August 16, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the present disclosure herein relate to a display device and a method for manufacturing the display device, and, for example, to a display device including both an inorganic light emitting element and an organic light emitting element and a method for manufacturing the display device. Background Art

[0004] Various types of display devices are being developed for multimedia electronic devices such as televisions, mobile phones, tablet computers, navigation systems, and game consoles. Such display devices include so-called self-luminous light-emitting elements configured to provide a display by emitting light from a light-emitting material.

[0005] The light-emitting element includes an inorganic light-emitting element including an inorganic light-emitting material such as quantum dots in the emission layer and / or an organic light-emitting element including an organic light-emitting material in the emission layer. Considering the optical properties and characteristics of the emission layer material, the display device may include both the inorganic light-emitting element and the organic light-emitting element. However, the inorganic light-emitting element and the organic light-emitting element should be optimized or improved in their structure to improve the efficiency of each light-emitting element. Summary of the invention

[0006] Embodiments of the present disclosure provide a display device having excellent light emitting efficiency by improving interface properties between an emission layer and an electron transport region.

[0007] Embodiments of the present disclosure also provide a method for manufacturing a display device having excellent processability by providing the same electron transport layer on emission layers having different characteristics when each functional layer of a light emitting element is formed by inkjet printing.

[0008] An embodiment of the present disclosure provides a display device, which includes: a substrate layer; a circuit layer on the substrate layer; a pixel defining layer on the circuit layer and having a plurality of pixel openings defined in the pixel defining layer; and a plurality of light-emitting elements, each including a hole transport region, an emission layer and an electron transport region stacked sequentially, and on the circuit layer, wherein the light-emitting elements include: an inorganic light-emitting element including an inorganic light-emitting body in the emission layer; and an organic light-emitting element including an organic light-emitting body in the emission layer, and the inorganic light-emitting element or the organic light-emitting element includes a protective layer, the protective layer is between the emission layer and the electron transport region and includes a polar polymer.

[0009] In an embodiment, the protective layer may include poly(ethylene glycol), poly(4-vinylpyridine), polyvinylpyrrolidone, and / or polyethyleneimine.

[0010] In an embodiment, the polar polymer can be dissolved in a polar organic solvent.

[0011] In an embodiment, the polar organic solvent may be dimethyl sulfoxide, ethylene glycol and / or an ether solvent.

[0012] In an embodiment, the protective layer may have a thickness of approximately To about , and the thickness of the protective layer may be a distance from the uppermost portion of the emission layer of the inorganic light-emitting element or the organic light-emitting element including the protective layer to the electron transport region.

[0013] In an embodiment, the electron transport region may include an inorganic electron transport material, and the organic light emitting element may include the protective layer.

[0014] In an embodiment, the electron transport region may include an electron transport layer, the electron transport layer includes the inorganic electron transport material, and in the inorganic light-emitting element, the electron transport layer may be directly on the emission layer, and in the organic light-emitting element, the protective layer may be directly between the electron transport layer and the emission layer.

[0015] In an embodiment, the electron transport region may include an organic electron transport material, and the inorganic light emitting element may include the protective layer.

[0016] In an embodiment, the electron transport region may include an electron transport layer, the electron transport layer includes the organic electron transport material, and in the organic light-emitting element, the electron transport layer may be directly on the emission layer, and in the inorganic light-emitting element, the protective layer may be directly between the electron transport layer and the emission layer.

[0017] In an embodiment, the inorganic light emitting body may include a plurality of quantum dots, and the protective layer of the inorganic light emitting element may be on an upper portion of the emission layer, and may be provided to penetrate between the plurality of quantum dots.

[0018] In an embodiment, the hole transport region, the emission layer and the electron transport region can be stacked and provided in each of the multiple pixel openings, and the hole transport region included in the inorganic light-emitting element and the hole transport region included in the organic light-emitting element can be the same, and the electron transport region included in the inorganic light-emitting element and the electron transport region included in the organic light-emitting element can be the same.

[0019] In an embodiment of the present disclosure, a display device includes a red light-emitting region, a green light-emitting region, and a blue light-emitting region that are different from each other when respectively observed in a plane (for example, in a plan view), and the display device includes: a substrate layer; a circuit layer, on the substrate layer; and a display layer, including a red light-emitting element provided corresponding to the red light-emitting region, a green light-emitting element provided corresponding to the green light-emitting region, and a blue light-emitting element provided corresponding to the blue light-emitting region, and on the circuit layer, wherein the red light-emitting element, the green light-emitting element, and the blue light-emitting element each include a hole transport region, an emission layer, and an electron transport region stacked sequentially, one or two light-emitting elements selected from the red light-emitting element, the green light-emitting element, and the blue light-emitting element are inorganic light-emitting elements including quantum dots in the emission layer, and the other light-emitting elements selected from the red light-emitting element, the green light-emitting element, and the blue light-emitting element are organic light-emitting elements including organic light-emitting materials in the emission layer, and the inorganic light-emitting element or the organic light-emitting element includes a protective layer, which is between the emission layer and the electron transport region and includes a polar polymer.

[0020] In an embodiment, the protective layer may include poly(ethylene glycol), poly(4-vinylpyridine), polyvinylpyrrolidone and / or polyethyleneimine.

[0021] In an embodiment, the inorganic light emitting element and the electron transport region of the organic light emitting element may include an inorganic electron transport layer including an inorganic electron transport material, and the protective layer may be directly between the emission layer of the organic light emitting element and the inorganic electron transport layer.

[0022] In an embodiment, the electron transport region of the inorganic light emitting element and the organic light emitting element may include an organic electron transport layer including an organic electron transport material, and the protective layer may be directly between the emission layer of the inorganic light emitting element and the organic electron transport layer.

[0023] In an embodiment, the red light emitting element and the green light emitting element may be the inorganic light emitting elements, and the blue light emitting element may be the organic light emitting element.

[0024] In an embodiment of the present disclosure, a method for manufacturing a display device includes: forming a circuit layer on a substrate layer; and forming a display layer on the circuit layer, the display layer including a pixel defining layer and an inorganic light-emitting element and an organic light-emitting element separated by the pixel defining layer, the pixel defining layer having a plurality of pixel openings defined on the circuit layer, wherein the formation of the display layer includes: sequentially providing a hole transport region, an inorganic emission layer including quantum dots, and an electron transport region in at least one pixel opening of the plurality of pixel openings by an inkjet printing method to form the inorganic light-emitting element; and sequentially providing the hole transport region, an organic emission layer including an organic light-emitting material, and the electron transport region in other pixel openings of the plurality of pixel openings by an inkjet printing method to form the organic light-emitting element, and the formation of the inorganic light-emitting element or the formation of the organic light-emitting element includes providing a protective layer ink between the inorganic emission layer and the electron transport region or between the organic emission layer and the electron transport region by the inkjet printing method to form a protective layer, and the protective layer ink includes a polar polymer and a polar organic solvent.

[0025] In embodiments, the polar polymer may be poly(ethylene glycol), poly(4-vinylpyridine), polyvinylpyrrolidone and / or polyethyleneimine.

[0026] In an embodiment, the polar organic solvent may be dimethyl sulfoxide, ethylene glycol and / or an ether solvent.

[0027] In an embodiment, the electron transport region formed in forming the inorganic light emitting element and the electron transport region formed in forming the organic light emitting element may include electron transport layers formed using the same electron transport material.

[0028] In an embodiment, the electron transport material may include an organic electron transport material, and forming the inorganic light emitting element may include forming the protective layer between the inorganic emission layer and the electron transport layer.

[0029] In an embodiment, the electron transport material may include an inorganic electron transport material, and forming the organic light emitting element may include forming the protective layer between the organic emission layer and the electron transport layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The accompanying drawings are included to provide a further understanding of the subject matter of the present disclosure and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0031] Figure 1 is a perspective view showing a display device according to an embodiment;

[0032] Figure 2 is shown with Figure 1 A cross-sectional view of a portion corresponding to line II';

[0033] Figure 3 is shown with Figure 1 A cross-sectional view of a portion corresponding to line II-II';

[0034] Figure 4A is a cross-sectional view of a light emitting element according to an embodiment;

[0035] Figure 4B is a cross-sectional view of a light emitting element according to an embodiment;

[0036] Figure 4C is a cross-sectional view of a light emitting element according to an embodiment;

[0037] Figure 5A is a cross-sectional view of a light emitting element according to an embodiment;

[0038] Figure 5B is a cross-sectional view of a light emitting element according to an embodiment;

[0039] Figure 5C is a cross-sectional view of a light emitting element according to an embodiment;

[0040] Figure 6 is a cross-sectional view of a display device according to an embodiment;

[0041] Fig. 7A is a cross-sectional view showing an example of a display layer included in the display device of the embodiment;

[0042] Figure 7B is a cross-sectional view showing an example of a display layer included in the display device of the embodiment;

[0043] Fig. 8A is a cross-sectional view showing an example of a display layer included in a display device according to an embodiment;

[0044] Figure 8B is a cross-sectional view showing an example of a display layer included in a display device according to an embodiment; and

[0045] 9A to 9E are cross-sectional views each showing a part of a method for manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0046] The subject matter of the present disclosure can be modified in many alternative forms, and therefore exemplary embodiments will be illustrated in the drawings and described in more detail. However, it should be understood that it is not intended to limit the present disclosure to the particular forms disclosed, but is intended to cover all modifications, equivalents and substitutes falling within the spirit and scope of the present disclosure.

[0047] It will be understood that when an element (or region, layer, portion, etc.) is referred to as being “on,” “connected to” or “coupled to” another element, it can be directly on, directly connected to or coupled to the other element, or intervening elements may be present therebetween.

[0048] The same reference numerals refer to the same elements. In addition, in the drawings, the thickness, proportion and size of the elements may be exaggerated in order to effectively describe the technical content. The term "and / or" includes all combinations of one or more that the associated configurations can define.

[0049] It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the spirit or scope of the present disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. Unless the context clearly indicates otherwise, singular forms are also intended to include plural forms.

[0050] In addition, the terms "below", "on the lower side", "above" or "on the upper side" etc. may be used to describe the relationship of components shown in the drawings. The terms are used as relative concepts and are described with reference to the directions shown in the drawings, but the present disclosure is not limited thereto.

[0051] It should be understood that the terms “including” or “having” are intended to specify the presence of the stated features, integers, steps, operations, elements, components or combinations thereof in the present disclosure, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components or combinations thereof.

[0052] As used herein, the term "Group" refers to a Group of the International Union of Pure and Applied Chemistry (IUPAC) Periodic Table of the Elements.

[0053] As used herein, "Group II" may include Group IIA elements and Group IIB elements. For example, the Group II element may be magnesium (Mg) and / or zinc (Zn), but is not limited thereto.

[0054] As used herein, "Group III" may include Group IIIA elements and Group IIIB elements. For example, the Group III element may be aluminum (Al), indium (In) and / or gallium (Ga), but is not limited thereto.

[0055] As used herein, "Group V" may include Group VA elements and Group VB elements. For example, the Group V element may be phosphorus (P), arsenic (As) and / or antimony (Sb), but is not limited thereto.

[0056] As used herein, "Group VI" may include Group VIA elements and Group VIB elements. For example, the Group VI element may be oxygen (O), sulfur (S), selenium (Se) and / or tellurium (Te), but is not limited thereto.

[0057] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. In addition, unless explicitly defined as such herein, terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense.

[0058] Hereinafter, a display device according to an embodiment of the present disclosure and a method for manufacturing the display device of the embodiment will be described with reference to the accompanying drawings.

[0059] Figure 1 is a perspective view showing a display device according to an embodiment. Figure 2 is a cross-sectional view of a display device according to an embodiment. Figure 3 is a cross-sectional view showing a portion of a display device according to an embodiment in more detail. Figure 2 is shown with Figure 1 The cross-sectional view of the portion corresponding to the line II', and Figure 3 is shown with Figure 1 A cross-sectional view of the portion corresponding to line II-II'.

[0060] The display device DD may be a device that is activated according to an electrical signal. For example, the display device DD may be a large device such as a television, a monitor, and / or an outdoor billboard. In addition, the display device DD may be a small and / or medium-sized device such as a personal computer (e.g., a laptop computer, a tablet computer), a personal digital terminal, a car navigation system, a game console, a smart phone, and / or a camera. In addition, these devices are provided only as embodiments, and other electronic devices may be used without departing from the spirit or scope of the present disclosure.

[0061] The display device DD may display an image (and / or video) through a display surface DD-IS. The display device DD may include a plurality of light emitting areas PXA and a non-light emitting area NPXA. The display surface DD-IS may be parallel to a plane defined by a first direction DR1 and a second direction DR2. The display surface DD-IS may include a display area DA and a non-display area NDA. A plurality of light emitting areas PXA may be in the display area DA. The light emitting area PXA may be referred to as a pixel area.

[0062] The non-display area NDA may be defined along the edge of the display surface DD-IS. The non-display area NDA may surround the display area DA. However, the embodiments of the present disclosure are not limited thereto, and the non-display area NDA may not be provided, or the non-display area NDA may be provided only on one side of the display area DA.

[0063] Figure 1 The display device DD provided with a flat display surface DD-IS is shown, but the embodiments of the present disclosure are not limited thereto. The display device DD may include a curved display surface and / or a three-dimensional display surface. The three-dimensional display surface may include a plurality of display areas indicating different directions.

[0064] Figure 1The following figures show the first direction axis DR1 to the third direction axis DR3, and the directions indicated by the first direction axis DR1, the second direction axis DR2 and the third direction axis DR3 described in this article are relative concepts and can therefore be changed to other directions. In addition, the directions indicated by the first direction axis DR1, the second direction axis DR2 and the third direction axis DR3 can be described as the first direction DR1, the second direction DR2 and the third direction DR3, and the same reference numerals can be used. The first direction axis DR1 and the second direction axis DR2 in this article can be perpendicular to each other, and the third direction axis DR3 can be the normal direction of the plane defined by the first direction axis DR1 and the second direction axis DR2. In this article, the term "plane" refers to the plane defined by the first direction axis DR1 and the second direction axis DR2, and the term "cross section" refers to a plane perpendicular to the plane defined by the first direction axis DR1 and the second direction axis DR2 and parallel to the third direction axis DR3. The thickness direction of the display device DD can be parallel to the third direction DR3, and the third direction DR3 is the normal direction relative to the plane defined by the first direction DR1 and the second direction DR2.

[0065] The upper surface (or front surface) and the lower surface (or rear surface) of the member constituting the display device DD may be defined relative to the third direction DR3. In some embodiments, among the two surfaces facing the third direction DR3 in one member, the surface relatively adjacent to the display surface DD-IS may be defined as the front surface (or upper surface), and the surface relatively spaced apart from the display surface DD-IS may be defined as the rear surface (or lower surface). In addition, herein, an upper portion (or upper side) and a lower portion (or lower side) may be defined relative to the third direction DR3, and the upper portion (or upper side) may be defined as a direction closer to the display surface DD-IS, and the lower portion (or lower side) may be defined as a direction away from the display surface DD-IS.

[0066] Herein, when a component is "directly disposed / formed directly" on another component, it indicates that the third component is not between one component and another component. For example, when a component is "directly positioned / formed directly" on another component, it indicates that the component is "in contact" with the other component.

[0067] refer to Figure 2 and Figure 3, the display device DD may include a display panel DP and an optical member PP on the display panel DP. The display panel DP may include a display layer EDL. The display panel DP may include a base layer BS, a circuit layer DP-CL on the base layer, and a display layer EDL on the circuit layer DP-CL. The display layer EDL may include light emitting elements ED-R, ED-G, and ED-B. In addition, the display panel DP may include an encapsulation layer TFE on the display layer EDL. The encapsulation layer TFE may be directly on the display layer EDL, or may be bonded to the display layer EDL through a separate member.

[0068] The display panel DP may be configured to substantially generate an image. In the display device DD of the embodiment, the display panel DP may be a light-emitting display panel. In the embodiment, the display panel DP may include both an inorganic light-emitting element including an inorganic light-emitting body such as a quantum dot and an organic light-emitting element including an organic light-emitting body.

[0069] The optical member PP may be on the display panel DP to control reflected light caused by external light in the display panel DP.

[0070] refer to Figures 1 to 3 , the plurality of light emitting areas PXA may be in the display area DA of the display device DD of the embodiment. The plurality of light emitting areas PXA may each be an area that emits light generated from each of the light emitting elements ED-R, ED-G, and ED-B.

[0071] The light emitting regions PXA of the display device DD according to the embodiment may be arranged in a stripe form. Figure 1 , the plurality of light emitting regions PXA may be aligned along the first direction axis DR1 or the second direction axis DR2. However, the embodiments of the present disclosure are not limited thereto, and the light emitting regions PXA may be aligned along the first direction axis DR1 or the second direction axis DR2. Arrangement structure (e.g., RGBG matrix, RGBG structure, or RGBG matrix structure) or DIAMOND The structure is arranged in the form of an array, but the present disclosure is not limited thereto. is an officially registered trademark of Samsung Display Co., Ltd.

[0072] In addition, the light emitting area PXA is Figure 1 etc. as having areas of similar size, but the embodiments of the present disclosure are not limited thereto, and the light emitting region PXA may have areas of different sizes according to the wavelength range of the emitted light.

[0073] The light-emitting region PXA may include a first light-emitting region PXA-R, a second light-emitting region PXA-G, and a third light-emitting region PXA-B. The display device DD may include a plurality of light-emitting regions PXA-R, PXA-G, and PXA-B that are repeatedly arranged throughout the display area DA. The display device DD of the embodiment may include a first light-emitting region PXA-R, a second light-emitting region PXA-G, and a third light-emitting region PXA-B that are different from each other. In addition, the display device DD may include a non-light-emitting region NPXA provided around the first light-emitting region PXA-R, the second light-emitting region PXA-G, and the third light-emitting region PXA-B. The non-light-emitting region NPXA sets a boundary between the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B. The non-light-emitting region NPXA may surround the first light-emitting region PXA-R, the second light-emitting region PXA-G, and the third light-emitting region PXA-B. A structure (eg, a pixel defining layer PDL) that prevents or reduces color mixing among the first, second, and third light-emitting regions PXA-R, PXA-G, and PXA-B may be in the non-light-emitting region NPXA.

[0074] The first light emitting region PXA-R, the second light emitting region PXA-G, and the third light emitting region PXA-B may each be a region separated by a pixel defining layer PDL. The non-light emitting region NPXA may be a region between the adjacent first light emitting region PXA-R, the second light emitting region PXA-G, and the third light emitting region PXA-B, and may correspond to the pixel defining layer PDL.

[0075] The first light emitting region PXA-R, the second light emitting region PXA-G, and the third light emitting region PXA-B may each be a region emitting light generated from each of the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B. When viewed on a plane (e.g., in a plan view), the first light emitting region PXA-R, the second light emitting region PXA-G, and the third light emitting region PXA-B may be spaced apart from each other.

[0076] In some embodiments, the first light emitting region PXA-R, the second light emitting region PXA-G, and the third light emitting region PXA-B may each correspond to a pixel. The pixel defining layer PDL may separate the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B. The emission layer EL-R of the first light emitting element ED-R, the emission layer EL-G of the second light emitting element ED-G, and the emission layer EL-B of the third light emitting element ED-B may be provided and separated in the pixel opening OH defined by the pixel defining layer PDL.

[0077] The pixel defining layer PDL may be formed of a polymer resin. For example, the pixel defining layer PDL may include a polyacrylate resin and / or a polyimide resin. In addition, in addition to the polymer resin, the pixel defining layer PDL may also include an inorganic material. In some embodiments, the pixel defining layer PDL may be formed to include a light absorbing material, and / or may be formed to include a black pigment and / or a black dye. The pixel defining layer PDL including a black pigment and / or a black dye may be a black pixel defining layer PDL. When forming the pixel defining layer PDL, carbon black may be used as the black pigment and / or the black dye, but the embodiments of the present disclosure are not limited thereto.

[0078] In addition, the pixel defining layer PDL may be formed of an inorganic material. For example, the pixel defining layer PDL may be formed of silicon nitride (SiN x ), silicon oxide (SiO x ) and / or silicon oxynitride (SiO x N y ) and so on.

[0079] The first light emitting region PXA-R, the second light emitting region PXA-G, and the third light emitting region PXA-B may be divided according to the color of light generated from the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B. Figure 3 In the display device DD of the embodiment shown in , three light emitting regions PXA-R, PXA-G, and PXA-B emitting red light, green light, and blue light are shown as examples. For example, in the display device DD of the embodiment, the first light emitting region PXA-R may be a red light emitting region, the second light emitting region PXA-G may be a green light emitting region, and the third light emitting region PXA-B may be a blue light emitting region.

[0080] In the display device DD according to the embodiment, the light emitting elements ED-R, ED-G and ED-B may emit light having different wavelength ranges. For example, in the display device DD of the embodiment, the first light emitting element ED-R may correspond to a red light emitting element emitting red light, the second light emitting element ED-G may correspond to a green light emitting element emitting green light, and the third light emitting element ED-B may correspond to a blue light emitting element emitting blue light. In some embodiments, the red light emitting region PXA-R, the green light emitting region PXA-G and the blue light emitting region PXA-B of the display device DD may correspond to the first light emitting element ED-R, the second light emitting element ED-G and the third light emitting element ED-B, respectively.

[0081] exist Figure 3, three different light emitting regions PXA-R, PXA-G, and PXA-B are shown, but the embodiments of the present disclosure are not limited thereto, and the display device DD of the embodiments may include four or more light emitting regions having different light emitting characteristics.

[0082] In the display panel DP, the base layer BS may be a member providing a base surface on which the display layer EDL is provided. The base layer BS may be a glass substrate, a metal substrate, and / or a plastic substrate, etc. However, the embodiments of the present disclosure are not limited thereto, and the base layer BS may be an inorganic layer, an organic layer, or a composite material layer.

[0083] In an embodiment, the circuit layer DP-CL may be on the base layer BS, and the circuit layer DP-CL may include a plurality of transistors. The transistors may each include a control electrode, an input electrode, and an output electrode. For example, the circuit layer DP-CL may include a switching transistor and a driving transistor for driving the light-emitting elements ED-R, ED-G, and ED-B of the display layer EDL.

[0084] The encapsulation layer TFE may cover the light emitting elements ED-R, ED-G and ED-B. The encapsulation layer TFE may seal the display layer EDL. The encapsulation layer TFE may be a thin film encapsulation layer. The encapsulation layer TFE may be a single layer, or a laminated layer of multiple layers. The encapsulation layer TFE includes at least one insulating layer (e.g., an electrical insulating layer). The encapsulation layer TFE according to the embodiment may include at least one inorganic film (hereinafter referred to as an encapsulation inorganic film). In addition, the encapsulation layer TFE according to the embodiment may include at least one organic film (hereinafter referred to as an encapsulation organic film) and at least one encapsulation inorganic film.

[0085] The encapsulated inorganic film can protect the display layer EDL from moisture / oxygen, and the encapsulated organic film can protect the display layer EDL from foreign matter such as dust particles. The encapsulated inorganic film may include silicon nitride, silicon oxynitride, silicon oxide, titanium oxide and / or aluminum oxide, etc., but is not particularly limited thereto. The encapsulated organic film may include acrylic compounds and / or epoxy compounds, etc. The encapsulated organic film may include a photopolymerizable organic material, and is not particularly limited thereto.

[0086] The optical member PP may be a reflection reducing layer that reduces the reflectivity of external light. For example, the optical member PP may include a polarizing film having a phase retarder and / or a polarizer, a multilayer reflective layer that causes destructive interference of reflected light, and / or a color filter corresponding to the pixel arrangement and luminous color of the display panel DP. When the optical member PP includes a color filter, the color filter may be provided in consideration of the luminous color of the pixels included in the display panel DP. In addition, in an embodiment, the optical member PP may not be provided.

[0087] In embodiments, the optical member PP may include a base substrate BL and a color filter layer CFL.

[0088] The base substrate BL may be a member that provides a base surface on which the color filter layer CFL is provided. The base substrate BL may be a glass substrate, a metal substrate, and / or a plastic substrate, etc. However, the embodiments of the present disclosure are not limited thereto, and the base substrate BL may be an inorganic layer, an organic layer, or a composite material layer.

[0089] The color filter layer CFL may include color filters CF-R, CF-G, and CF-B. The color filter layer CFL may include a first color filter CF-R, a second color filter CF-G, and a third color filter CF-B. The first color filter CF-R, the second color filter CF-G, and the third color filter CF-B may correspond to the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B, respectively. For example, the first color filter CF-R may be a red color filter, the second color filter CF-G may be a green color filter, and the third color filter CF-B may be a blue color filter. The first color filter CF-R, the second color filter CF-G, and the third color filter CF-B may correspond to the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B, respectively.

[0090] In some embodiments, a plurality of color filters CF-R, CF-G, and CF-B that transmit different light may overlap in an area corresponding to a non-luminous area NPXA between light-emitting areas PXA-R, PXA-G, and PXA-B. A plurality of color filters CF-R, CF-G, and CF-B may overlap in a third direction DR3, which is a thickness direction, to separate the boundaries between adjacent light-emitting areas PXA-R, PXA-G, and PXA-B. Therefore, the effect of blocking or reducing external light is enhanced to perform the same function as a black matrix. The overlapping structure of a plurality of color filters CF-R, CF-G, and CF-B may be used to prevent or reduce color mixing.

[0091] The first color filter CF-R, the second color filter CF-G, and the third color filter CF-B may each include a polymer photosensitive resin and a pigment and / or a dye. The first color filter CF-R may include a red pigment or a red dye, the second color filter CF-G may include a green pigment and / or a green dye, and the third color filter CF-B may include a blue pigment or a blue dye. However, the embodiments of the present disclosure are not limited thereto, and the third color filter CF-B may not include a pigment or a dye. The third color filter CF-B may include a polymer photosensitive resin, but does not include a pigment or a dye. The third color filter CF-B may be transparent. The third color filter CF-B may be formed of a transparent photosensitive resin.

[0092] The color filter layer CFL may further include a buffer layer BFL. For example, the buffer layer BFL may be a protective layer that protects the first color filter CF-R, the second color filter CF-G, and the third color filter CF-B. The buffer layer BFL may be an inorganic material layer including at least one inorganic material among silicon nitride, silicon oxide, and silicon oxynitride. The buffer layer BFL may be formed of a single layer or a plurality of layers.

[0093] In addition, the first color filter CF-R and the second color filter CF-G may be yellow color filters. The first color filter CF-R and the second color filter CF-G may not be separated from each other and may be provided as a whole.

[0094] In some embodiments, the color filter layer CFL may further include a light blocking unit. The light blocking unit may be a black matrix. The light blocking unit may be formed to include an organic light blocking material and / or an inorganic light blocking material, both of which include a black pigment and / or a black dye. The light blocking unit may prevent or reduce light leakage and separate the boundaries between adjacent color filters CF-R, CF-G, and CF-B.

[0095] In some embodiments, Figure 3 Unlike what is shown in FIGS. 1 and 10 , the optical member PP of the display device DD of the embodiment may not include the color filter layer CFL.

[0096] In the display device DD of the embodiment, each of the first light-emitting element ED-R, the second light-emitting element ED-G, and the third light-emitting element ED-B may include a first electrode AE, a hole transport region HTR, an emission layer EL-R, EL-G, or EL-B, an electron transport region ETR, and a second electrode CE. In some embodiments, the light-emitting elements ED-R, ED-G, and ED-B may each include a capping layer CPL on the second electrode CE.

[0097] The first electrode AE ​​may be exposed at the pixel opening OH of the pixel defining layer PDL. The first electrode AE ​​has conductivity (e.g., electrical conductivity). The first electrode AE ​​may be formed of a metal material, a metal alloy and / or a conductive compound. The first electrode AE ​​may be an anode or a cathode. In addition, the first electrode AE ​​may be a pixel electrode. However, embodiments of the present disclosure are not limited thereto.

[0098] The second electrode CE may be on the first electrode AE. The second electrode CE may be a cathode or an anode. In an embodiment, when the first electrode AE ​​is an anode, the second electrode CE may be a cathode, and when the first electrode AE ​​is a cathode, the second electrode CE may be an anode. The second electrode CE may be a common electrode. However, embodiments of the present disclosure are not limited thereto.

[0099] The hole transport region HTR may be between the first electrode AE ​​and the emission layer EL-R, EL-G or EL-B, and the electron transport region ETR may be between the emission layer EL-R, EL-G or EL-B and the second electrode CE.

[0100] exist Figure 3 In the embodiment shown in , the hole transport region HTR, the emission layers EL-R, EL-G and EL-B, and the electron transport region ETR of the first light-emitting element ED-R, the second light-emitting element ED-G, and the third light-emitting element ED-B may be in the pixel opening OH and may be separated from the hole transport region HTR, the emission layers EL-R, EL-G and EL-B, and the electron transport region ETR of the adjacent light-emitting region. In some embodiments, the hole transport region HTR, the emission layers EL-R, EL-G and EL-B, and the electron transport region ETR may be patterned and provided in each pixel opening OH.

[0101] In the display device DD of the embodiment, the hole transport region HTR, the emission layer EL-R, EL-G and EL-B of the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B, and the electron transport region ETR can be provided and formed by inkjet printing according to the method for manufacturing the display device of the embodiment to be further described below. However, the embodiments of the present disclosure are not limited to this. The hole transport region HTR, the emission layer EL-R, EL-G and EL-B, and the electron transport region ETR can be provided and formed by a method other than inkjet printing, and in some embodiments, at least a portion of the hole transport region HTR or the electron transport region ETR can extend to the upper part of the pixel defining layer PDL. And in some embodiments, the hole transport region HTR of the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B can be at least partially connected to each other, or the electron transport region ETR of the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B can be at least partially connected to each other.

[0102] In the display device DD of the embodiment, the second electrode CE and the cover layer CPL may be provided as a common layer throughout the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B, respectively. However, the embodiments of the present disclosure are not limited thereto, and at least one of the second electrode CE and the cover layer CPL may be provided to be separated in adjacent light emitting regions PXA-R, PXA-G, and PXA-B.

[0103] In the display device DD of the embodiment, at least one of the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B may be an inorganic light emitting element including an inorganic light emitting body in the emission layer, and the other light emitting elements of the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B may be an organic light emitting element including an organic light emitting body in the emission layer. In the embodiment, one light emitting element selected from the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B may be an inorganic light emitting element, and the other two light emitting elements selected from the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B may be organic light emitting elements. In the embodiment, one light emitting element selected from the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B may be an organic light emitting element, and the other two light emitting elements selected from the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B may be inorganic light emitting elements.

[0104] exist Figure 3 In the display device DD of the embodiment shown in , the first light emitting element ED-R and the second light emitting element ED-G may be inorganic light emitting elements, and the third light emitting element ED-B may be an organic light emitting element. In some embodiments, in the display device DD of the embodiment, the first light emitting element ED-R and the second light emitting element ED-G may be organic light emitting elements, and the third light emitting element ED-B may be an inorganic light emitting element.

[0105] The third light emitting element ED-B may be different from the first light emitting element ED-R and the second light emitting element ED-G in that the third light emitting element ED-B includes a protective layer PIL. The protective layer PIL may be between the third emission layer EL-B and the electron transport region ETR.

[0106] The protection layer PIL may include a polar polymer. The protection layer PIL may be formed from a polar polymer material. In an embodiment, the protection layer PIL may include poly(ethylene glycol), poly(4-vinylpyridine), polyvinyl pyrrolidone and / or polyethylene imine.

[0107] The polar polymer included in the protection layer PIL of the embodiment may be dissolved in a polar organic solvent, for example, the polar organic solvent may be dimethyl sulfoxide, ethylene glycol and / or an ether solvent.

[0108] The protective layer PIL in the embodiment can be formed using an inkjet printing method. The polar polymer can be dissolved in a polar organic solvent to prepare a protective layer ink for forming the protective layer PIL. The polar polymer is easily dissolved in a polar organic solvent and provided in the form of ink, and the protective layer ink including the polar organic solvent can be easily ejected from a nozzle or the like during inkjet printing, thereby providing excellent processability.

[0109] The protective layer PIL can improve the interface properties between adjacent organic layers and inorganic layers in the light-emitting element, and thus can increase the luminous efficiency of the light-emitting element. The protective layer PIL can be between the emission layer of the organic light-emitting element including the organic light-emitting body and the inorganic electron transport layer including the inorganic electron transport material, or between the emission layer of the inorganic light-emitting element including the inorganic light-emitting body and the organic electron transport layer including the organic electron transport material. The protective layer PIL can be between the emission layer and the inorganic electron transport layer of the organic light-emitting element, or between the emission layer and the organic electron transport layer of the inorganic light-emitting element, and thus can reduce the quenching phenomenon of the emission layer according to the difference in material properties between the emission layer and the electron transport layer. In some embodiments, the protective layer PIL can prevent or reduce the quenching of excitons in the emission layer caused by interfering with each layer according to the difference between the organic material and the inorganic material, thereby allowing the light-emitting element to exhibit excellent luminous efficiency.

[0110] FIG. 4A to FIG. 5C is a cross-sectional view of a light emitting element according to an embodiment. Specifically, FIG. 4A to FIG. 5C Each is a cross-sectional view of a light emitting element included in a display device according to an embodiment. Figure 4A and Figure 5A are cross-sectional views of the first light emitting element ED-R and the first light emitting element ED-Ra according to the embodiment, respectively, Figure 4B and Figure 5B are cross-sectional views of a second light emitting element ED-G and a second light emitting element ED-Ga according to the embodiment, respectively, and Figure 4C and Figure 5C 4 are cross-sectional views of a third light emitting element ED-B and a third light emitting element ED-Ba according to the embodiment, respectively.

[0111] The first electrode AE ​​may be a transmissive electrode, a semi-transmissive reflective electrode or a reflective electrode. The first electrode AE ​​may include at least one selected from Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, In, Sn and Zn, two or more compounds selected therefrom, two or more mixtures selected therefrom and / or oxides thereof.

[0112] When the first electrode AE ​​is a transmissive electrode, the first electrode AE ​​may include a transparent metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and / or indium tin zinc oxide (ITZO). When the first electrode AE ​​is a semi-transmissive reflective electrode or a reflective electrode, the first electrode AE ​​may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, a compound thereof, a mixture thereof (e.g., a mixture of Ag and Mg), or a material having a multilayer structure such as LiF / Ca (a stacking structure of LiF and Ca) or LiF / Al (a stacking structure of LiF and Al). In some embodiments, the first electrode AE ​​may have a multilayer structure including a reflective film or a semi-transmissive reflective film formed of the above materials and a transparent conductive film formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and / or indium tin zinc oxide (ITZO), etc. For example, the first electrode AE ​​may have a three-layer structure of ITO / Ag / ITO, but is not limited thereto. In some embodiments, the first electrode AE ​​may include the above-mentioned metal material, a combination of two or more metal materials selected from the above-mentioned metal materials, and / or an oxide of the above-mentioned metal material, but the embodiments of the present disclosure are not limited thereto. The first electrode AE ​​may have a thickness of about 100 nm. To about For example, the first electrode AE ​​may have a thickness of To about Thickness.

[0113] The second electrode CE may include at least one selected from Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, In, Sn and Zn, two or more compounds selected therefrom, two or more mixtures selected therefrom and / or oxides thereof.

[0114] The second electrode CE may be a transmissive electrode, a semi-transmissive reflective electrode or a reflective electrode. When the second electrode CE is a transmissive electrode, the second electrode CE may be formed of a transparent metal oxide (e.g., indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) and / or indium tin zinc oxide (ITZO), etc.).

[0115] When the second electrode CE is a semi-transmissive reflective electrode or a reflective electrode, the second electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, Yb, W, a mixture thereof, a compound thereof (e.g., AgMg, AgYb and / or MgYb), or a material having a multilayer structure such as LiF / Ca or LiF / Al. In some embodiments, the second electrode CE may have a multilayer structure including a reflective film or a semi-transmissive reflective film formed of the above materials and a transparent conductive film formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), etc. For example, the second electrode CE may include the above metal materials, a combination of two or more metal materials selected from the above metal materials, and / or an oxide of the above metal materials.

[0116] In some embodiments, the second electrode CE may be connected to the auxiliary electrode. When the second electrode CE is connected to the auxiliary electrode, the resistance of the second electrode CE may be reduced.

[0117] The first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B may further include a cover layer CPL on the second electrode CE. The cover layer CPL may include a multi-layer or a single layer.

[0118] In an embodiment, the cover layer CPL may be an organic layer and / or an inorganic layer. For example, when the cover layer CPL includes an inorganic material, the inorganic material may include an alkali metal compound such as LiF, an alkali metal compound such as MgF 2 Alkaline earth metal compounds, SiO x N y 、SiN x and / or SiO y wait.

[0119] For example, when the capping layer CPL includes an organic material, the organic material may include α-NPD, NPB, TPD, m-MTDATA, Alq 3 , CuPc, N4,N4,N4',N4'-tetrakis(biphenyl-4-yl)biphenyl-4,4'-diamine (TPD15) and / or 4,4',4"-tris(9-carbazolyl)triphenylamine (TCTA), etc., and / or may include epoxy resins and / or acrylate resins such as methacrylate. However, the embodiments of the present disclosure are not limited thereto, and the cover layer CPL may include at least one selected from the following compounds P1 to P5.

[0120]

[0121] In some embodiments, the cover layer CPL may have a refractive index of about 1.6 or more. For example, in a wavelength range of about 550 nm to about 660 nm, the cover layer CPL may have a refractive index of about 1.6 or more.

[0122] The hole transport region HTR may be on the first electrode AE. The hole transport region HTR may include a hole injection layer HIL, a hole transport layer HTL, etc. The hole transport region HTR may have a single layer formed of a single material, a single layer formed of a plurality of different materials, or a multilayer structure including a plurality of layers formed of a plurality of different materials.

[0123] In one embodiment, the hole transport region HTR may be formed by an inkjet printing method. However, the embodiments of the present disclosure are not limited thereto, and the hole transport region HTR may be formed using various suitable methods such as a vacuum deposition method, a spin coating method, a casting method, a Langmuir-Blodgett (LB) method, and / or a laser induced thermal imaging (LITI) method.

[0124] The hole transport region HTR may include any suitable hole injection material and / or suitable hole transport material commonly used in the art. In some embodiments, the hole transport region HTR may include a phthalocyanine compound such as copper phthalocyanine, N 1 ,N 1 '-([1,1'-biphenyl]-4,4'-diyl)bis(N 1 -phenyl-N 4 ,N 4 -di-m-tolylbenzene-1,4-diamine)(DNTPD), 4,4',4"-[tri(3-methylphenyl)phenylamino]triphenylamine (m-MTDATA), 4,4',4"-tri(N,N-diphenylamino)triphenylamine (TDATA), 4,4',4"-tri[N-(2-naphthyl)-N-phenylamino]-triphenylamine (2-TNATA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / dodecylbenzenesulfonic acid (P ANI / DBSA), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB), triphenylamine-containing polyetherketone (TPAPEK), 4-isopropyl-4'-methyldiphenyliodonium [tetrakis(pentafluorophenyl)borate] and / or dipyrazine [2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HATCN), etc.

[0125] In some embodiments, the hole transport region HTR may include a carbazole derivative such as N-phenylcarbazole or polyvinylcarbazole, a fluorene derivative, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD), a triphenylamine derivative such as 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB), 4,4'-diphenylamine (TPD), or a mixture of N,N'-di(1,1-biphenyl)-4,4'-diamine. '-Cyclohexylenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), 4,4'-bis[N,N'-(3-methylphenyl)amino]-3,3'-dimethylbiphenyl (HMTPD), 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi), 9-phenyl-9H-3,9'-bicarbazole (CCP) and / or 1,3-bis(1,8-dimethyl-9H-carbazole-9-yl)benzene (mDCP), etc.

[0126] The thickness of the hole transport region HTR may be in the range of about 5 nm to about 1,500 nm, for example, in the range of about 10 nm to about 500 nm. When the thickness of the hole transport region HTR satisfies the above range, suitable or satisfactory hole transport properties may be obtained without significantly increasing the driving voltage.

[0127] Figure 4A The emission layer EL-R of the first light emitting element ED-R shown in FIG. Figure 4B The emission layer EL-G of the second light-emitting element ED-G shown in the figure may each be an inorganic emission layer including an inorganic luminophore. The emission layer EL-R of the first light-emitting element ED-R and the emission layer EL-G of the second light-emitting element ED-G may each include quantum dots QD-R and QD-G. The emission layer EL-R of the first light-emitting element ED-R may include red quantum dots QD-R that emit red light, and the emission layer EL-G of the second light-emitting element ED-G may include green quantum dots QD-G that emit green light.

[0128] In this article, the quantum dots QD-R and QD-G as inorganic light emitters can be InP-based quantum dots and / or Cd-based quantum dots. In some embodiments, the first light-emitting element ED-R and the second light-emitting element ED-G can be inorganic light emitters and can include quantum dots containing InP in the core and / or quantum dots containing Cd in the core.

[0129] However, the embodiments of the present disclosure are not limited thereto. The emission layer of the inorganic light emitting element may include various suitable types (or kinds) of quantum dots.

[0130] Quantum dots can be crystals of semiconductor compounds. Depending on the size of the crystals, quantum dots can emit light of various suitable emission wavelengths. By adjusting the ratio of elements in the quantum dot compound, quantum dots can emit light of various suitable emission wavelengths.

[0131] The quantum dot may have a diameter of, for example, about 1 nm to about 10 nm.The quantum dot may be synthesized by a wet chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, and / or a process similar thereto.

[0132] Among the quantum dot manufacturing processes, the wet chemical process is a method of mixing an organic solvent and a precursor material and then growing quantum dot particle crystals. When the quantum dot particle crystals grow, the organic solvent naturally acts as a dispersant that coordinates with the surface of the quantum dot crystals, and the growth of the particle crystals can be controlled. Therefore, the wet chemical process is easier than vapor deposition methods such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and the growth of quantum dot particles can be controlled by a low-cost process.

[0133] The core of the quantum dot may be selected from the group consisting of Group II-VI compounds, Group III-V compounds, Group III-VI compounds, Group I-III-VI compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0134] The II-VI compound can be selected from the group consisting of: a binary compound selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a ternary compound selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, Cd ZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and mixtures thereof. In some embodiments, the II-VI semiconductor compounds may also include Group I metals and / or Group IV elements. The I-II-VI compounds may be selected from CuZnS and the like, and the II-IV-VI compounds may be selected from ZnSnS and the like. The I-II-IV-VI compounds may be selected from quaternary compounds, and the quaternary compounds may be selected from Cu 2 ZnSnS2 , Cu 2 ZnSnS 4 , Cu 2 ZnSnSe 4 、Ag 2 ZnSnS 2 and mixtures thereof.

[0135] III-VI compounds may include: binary compounds such as In 2 S 3 and / or In 2 Se 3 ; Ternary compounds such as InGaS 3 and / or InGaSe 3 ; or any combination thereof.

[0136] The I-III-VI group compound can be selected from: a ternary compound selected from AgInS, AgInS 2 、CuInS、CuInS 2 、AgGaS 2 、CuGaO 2 、AgGaO 2 、AgAlO 2 or a mixture thereof; and / or a quaternary compound such as AgInGaS 2 and CuInGaS 2 .

[0137] The III-V compound may be selected from the group consisting of: a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and a quaternary compound selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. In some embodiments, the III-V compound may further include a Group II metal. For example, InZnP or the like may be selected as the III-II-V group compound.

[0138] The IV-VI Group compounds can be selected from the group consisting of: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0139] Examples of II-IV-V semiconductor compounds may be selected from ZnSnP, ZnSnP 2 、ZnSnAs 2 、ZnGeP 2 、ZnGeAs 2 、CdSnP 2 and CdGeP 2 and mixtures thereof to form a group of ternary compounds.

[0140] The Group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The Group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0141] Each element included in a multi-element compound such as a binary compound, a ternary compound, and / or a quaternary compound may be present in the particle at a uniform concentration or a non-uniform concentration. In some embodiments, the formula representing the quantum dot indicates the type (or kind) of element included in the compound, and the ratio of elements in the compound may be different. For example, as described herein, AgInGaS 2 Can indicate AgIn x Ga 1-x S 2 (x is a real number between 0 and 1).

[0142] In some embodiments, binary compounds, ternary compounds, and / or quaternary compounds may be present in particles having a consistent concentration profile, or may be present in the same particles having a partially different concentration profile. In some embodiments, there may be a core / shell structure in which one quantum dot surrounds another quantum dot. The core / shell structure may have a concentration gradient in which the concentration of the element present in the shell decreases along the direction toward the core.

[0143] In some embodiments, the quantum dot may have a core / shell structure including a core having nanocrystals as described above and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer to prevent or reduce chemical degradation of the core to maintain semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. Examples of the shell of the quantum dot may be metal and / or non-metal oxides, semiconductor compounds, or combinations thereof.

[0144] For example, the metal and / or non-metal oxides may be binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO; and / or ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 and / or CoMn 2 O 4 , but the embodiments of the present disclosure are not limited thereto.

[0145] In some embodiments, the semiconductor compound may be, for example, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the embodiments of the present disclosure are not limited thereto.

[0146] The quantum dots may have a full width at half maximum (FWHM) of about 45 nm or less, about 40 nm or less, or, for example, about 30 nm or less in the emission wavelength spectrum, and within the foregoing range, color purity and / or color reproducibility may be improved. In some embodiments, light emitted by the quantum dots is emitted in all (e.g., substantially all) directions, and thus a wide viewing angle may be improved.

[0147] In some embodiments, the form of quantum dots is not particularly limited as long as it is a form commonly used in the art, and for example, quantum dots in the form of spherical nanoparticles, pyramidal nanoparticles, multi-arm nanoparticles and / or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanoplates, etc. can be used.

[0148] When the size of the quantum dots and / or the ratio of elements in the quantum dot compound are adjusted, the energy band gap can be controlled accordingly to obtain light of various suitable wavelengths from the quantum dot emission layer. Therefore, by using quantum dots as described above (e.g., by using quantum dots of different sizes and / or quantum dots with different element ratios in the quantum dot compound), a light-emitting element emitting light of various suitable wavelengths can be obtained.

[0149] Figure 4C The emission layer EL-B of the third light-emitting element ED-B shown in the figure may be an organic emission layer including an organic light-emitting body. The emission layer EL-B of the third light-emitting element ED-B may include a host material and a dopant material. The emission layer EL-B of the third light-emitting element ED-B may include a dopant that emits blue light. The dopant material included in the emission layer EL-B of the third light-emitting element ED-B may be a fluorescent dopant or a thermally activated delayed fluorescent dopant. However, the embodiments of the present disclosure are not limited thereto.

[0150] The emission layer EL-B may include any one selected from the following compounds H1-1 to H1-10 as a host material. However, the host material included in the emission layer EL-B is not limited to the following compounds, and any suitable host material used in the emission layer of the organic light emitting element may be used without limitation.

[0151]

[0152] In an embodiment, any one of the hydrogen atoms in the above compounds H1-1 to H1-10 can be independently replaced by a deuterium atom. For example, the above compound H1-1 can be represented by the following H1-1D.

[0153]

[0154] The emission layer EL-B may include at least one selected from the following compounds FD1 to FD49 as a dopant material. However, the dopant material included in the emission layer EL-B is not limited to the following compounds, and any suitable dopant material used in the emission layer of the organic light emitting element may be used without limitation.

[0155]

[0156]

[0157]

[0158]

[0159] exist FIG. 4A to FIG. 4C In the light-emitting elements ED-R, ED-G and ED-B shown in the embodiment, the electron transport region ETR may include an inorganic electron transport layer I-ETL, and the inorganic electron transport layer I-ETL includes an inorganic electron transport material. In the light-emitting elements ED-R, ED-G and ED-B according to the embodiment, the electron transport region ETR may include an inorganic electron transport layer I-ETL and an electron injection layer EIL. In some embodiments, the electron injection layer EIL may not be provided.

[0160] The electron transport region ETR may have a single layer formed of a single material, a single layer formed of a plurality of different materials, or a multilayer structure having a plurality of layers formed of a plurality of different materials. For example, the electron transport region ETR may have a single layer structure of an inorganic electron transport layer I-ETL including an inorganic electron transport material. The electron transport region ETR may have a thickness of, for example, about 20 nm to about 150 nm.

[0161] The electron transport region ETR may be formed by inkjet printing. However, the embodiments of the present disclosure are not limited thereto, and the electron transport region ETR may be formed using various suitable methods such as a vacuum deposition method, a spin coating method, a casting method, a Langmuir-Blodgett (LB) method, and / or a laser induced thermal imaging (LITI) method.

[0162] The inorganic electron transport layer I-ETL may include metal inorganic nanoparticles as an inorganic electron transport material. The inorganic electron transport material may include TiO 2 、ZnO、ZnMgO、ZnAlO、SnO 2 , Li 2 O and / or BaO. For example, in some embodiments, the inorganic electron transport layer I-ETL may include TiO 2 、ZnO、ZnMgO、ZnAlO、SnO 2 , Li 2 At least one of O and BaO. The metal inorganic particles may be inked by a sol-gel technique and provided by an inkjet printing method to form the inorganic electron transport layer I-ETL.

[0163] The inorganic electron transport layer I-ETL may be formed using the same material and the same manufacturing method as the emission layers EL-R, EL-G, and EL-B of the first light emitting element ED-R, the second light emitting element ED-G, and the third light emitting element ED-B.

[0164] When the first light emitting element ED-R, the second light emitting element ED-G and the third light emitting element ED-B each have FIG. 4A to FIG. 4C In some embodiments, when an inorganic electron transport layer I-ETL including an inorganic electron transport material is included, the protective layer PIL may be on the emission layer EL-B including the organic light emitting body of the third light emitting element ED-B.

[0165] In the third light emitting element ED-B, the protection layer PIL is directly between the emission layer EL-B including the organic light emitting body and the inorganic electron transport layer I-ETL, and thus can prevent or reduce direct contact between the emission layer EL-B and the inorganic electron transport material.

[0166] The protective layer PIL is between the emission layer EL-B and the inorganic electron transport layer I-ETL, and thus can prevent quenching in the emission layer EL-B due to the inorganic electron transport material (or reduce the possibility or amount of such quenching). In some embodiments, even when the third light-emitting element ED-B including an organic emission layer is provided with the same inorganic electron transport material as the first light-emitting element ED-R and the second light-emitting element ED-G including an inorganic emission layer, the excellent luminous efficiency of the third light-emitting element ED-B can be maintained without reducing the luminous efficiency.

[0167] In the third light emitting element ED-B, the protective layer PIL may have a thickness of about To about Thickness t PI When the thickness of the protective layer PIL is t PI Less than approximately When the thickness of the protective layer PIL is t PI Greater than approximately When the protective layer PIL is used as an insulating layer (eg, an electrical insulating layer), it is difficult for electrons to move, resulting in reduced light emitting efficiency.

[0168] when Figure 3 The display device DD of the embodiment shown in FIG. FIG. 4A to FIG. 4CWhen describing the structures of the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B, the electron transport region ETR of the same material can be used in the light-emitting elements ED-R, ED-G and ED-B, regardless of whether inorganic light-emitting bodies and organic light-emitting bodies are provided in the emission layers EL-R, EL-G and EL-B of the light-emitting elements ED-R, ED-G and ED-B, and excellent light-emitting efficiency can be achieved in all the light-emitting elements ED-R, ED-G and ED-B.

[0169] FIG. 5A to FIG. 5C Each is shown and included in Figure 3 The embodiment of the light-emitting elements ED-Ra, ED-Ga and ED-Ba corresponding to the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B in the display layer EDL of the display device DD of the embodiment shown in FIG. FIG. 4A to FIG. 4C The described contents may also be applied to the components of the first electrode AE, the hole transport region HTR, the second electrode CE and the cover layer CPL.

[0170] Figure 5A The emission layer EL-Ra of the first light emitting element ED-Ra shown in FIG. Figure 5B The emission layer EL-Ga of the second light-emitting element ED-Ga shown in the figure may each be an organic emission layer including an organic light-emitting body. The emission layer EL-Ra of the first light-emitting element ED-Ra and the emission layer EL-Ga of the second light-emitting element ED-Ga may each include a host material and a dopant material. The emission layer EL-Ra of the first light-emitting element ED-Ra may include a dopant that emits red light, and the emission layer EL-Ga of the second light-emitting element ED-Ga may include a dopant that emits green light. The dopant material included in the emission layers EL-Ra and EL-Ga of the first light-emitting element ED-Ra and the second light-emitting element ED-Ga may be a fluorescent dopant or a phosphorescent dopant. However, the embodiments of the present disclosure are not limited thereto.

[0171] As a host material, at least one of bis[2-(diphenylphosphino)phenyl]ether oxide (DPEPO), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-bis(N-carbazolyl)benzene (mCP), 2,8-bis(diphenylphosphino)dibenzo[b,d]furan (PPF), 4,4',4"-tri(carbazol-9-yl)-triphenylamine (TCTA), and 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi) may be included. However, the type (or kind) of the host material is not limited thereto, and, for example, tris(8-hydroxyquinoline)aluminum (Alq) may be used. 3), poly(N-vinylcarbazole) (PVK), 9,10-di(naphthalene-2-yl)anthracene (ADN), 2-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN), distyrene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), hexaphenylcyclotriphosphazene (CP1), 1,4-bis(triphenylsilyl)benzene (UGH2), hexaphenylcyclotrisiloxane (DPSiO 3 ) and / or octaphenylcyclotetrasiloxane (DPSiO 4 ) etc. as the main material.

[0172] In an embodiment, the host material may include any one selected from the following Compounds E1 to E19. However, the embodiments of the present disclosure are not limited thereto.

[0173]

[0174]

[0175]

[0176] In an embodiment, as a dopant material, it can also include: styryl derivatives (for example, 1,4-bis[2-(3-N-ethylcarbazolyl)vinyl]benzene (BCzVB), 4-(di-p-tolylamino)-4'-[(di-p-tolylamino)styryl]stilbene (DPAVB), N-(4-((E)-2-(6-((E)-4-(diphenylamino)styryl)naphthalene-2-yl)vinyl)phenyl)-N-phenylaniline (N-BDAVBi), 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi)); perylene or its derivatives (for example, 2,5,8,11-tetra-tert-butylperylene (TBP)); and / or pyrene or its derivatives (for example, 1,1'-dipyrene, 1,4-dipyrenylbenzene, 1,4-bis(N,N-diphenylamino)pyrene), etc.

[0177] In some embodiments, as a dopant material, any suitable phosphorescent dopant material commonly used in the art may be included. In some embodiments, as a phosphorescent dopant, a metal complex including iridium (Ir), platinum (Pt), osmium (Os), gold (Au), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb) and / or thulium (Tm) may be used. For example, bis(4,6-difluorophenylpyridine-N,C2') iridium (III) picolinate (FIrpic), bis(2,4-difluorophenylpyridine)-tetra(1-pyrazolyl) borate iridium (III) (FIr6) and / or octaethylporphyrin platinum (PtOEP) etc. may be used as a phosphorescent dopant. However, the embodiments of the present disclosure are not limited thereto.

[0178] Figure 5C The emission layer EL-Ba of the third light-emitting element ED-Ba shown in the figure may be an inorganic emission layer including an inorganic light-emitting body. The emission layer EL-Ba of the third light-emitting element ED-Ba may include quantum dots QD-B. The emission layer EL-Ba of the third light-emitting element ED-Ba may include blue quantum dots QD-B that emit blue light. The blue quantum dots QD-B may be InP-based quantum dots and / or Cd-based quantum dots. In some embodiments, the blue quantum dots QD-B may be semiconductor compound crystals, and the description of the above quantum dots may also be applied to the blue quantum dots QD-B.

[0179] exist FIG. 5A to FIG. 5C In the light-emitting elements ED-Ra, ED-Ga and ED-Ba shown in the embodiment, the electron transport region ETRa may include an organic electron transport layer O-ETL containing an organic electron transport material. In the light-emitting elements ED-Ra, ED-Ga and ED-Ba according to the embodiment, the electron transport region ETRa may include an organic electron transport layer O-ETL and an electron injection layer EIL. In some embodiments, the electron injection layer EIL may not be provided.

[0180] The electron transport region ETRa may have a single layer formed of a single material, a single layer formed of a plurality of different materials, or a multilayer structure including a plurality of layers formed of a plurality of different materials. For example, the electron transport region ETRa may have a single layer structure of an organic electron transport layer O-ETL including an organic electron transport material. The electron transport region ETRa may have a thickness of, for example, about 20 nm to about 150 nm.

[0181] The electron transport region ETRa may be formed by inkjet printing. However, the embodiments of the present disclosure are not limited thereto, and the electron transport region ETRa may be formed using various suitable methods such as a vacuum deposition method, a spin coating method, a casting method, a Langmuir-Blodgett (LB) method, and / or a laser induced thermal imaging (LITI) method.

[0182] In some embodiments, the organic electron transport layer O-ETL may include at least one selected from the following organic electron transport materials.

[0183]

[0184] In some embodiments, the organic electron transport layer O-ETL may include any suitable organic electron transport material commonly used in the art. In some embodiments, the organic electron transport layer O-ETL may include, for example, tris(8-hydroxyquinoline)aluminum (Alq 3 ), 1,3,5-tris[(3-pyridyl)-phenyl-3-yl]benzene, 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine (T2T), 2,4,6-tris(3-(pyrimidin-5-yl)phenyl)-1,3,5-triazine (TPM-TAZ), 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzimidazol-1-ylphenyl)-9,10-dinaphthylanthracene, 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi), 2,9-dimethyl-4,7-di Phenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalene-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinolinolato-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), bis(10-hydroxybenzoquinolinolato)beryllium (Bebq 2 ), 9,10-di(naphthalene-2-yl)anthracene (ADN), 1,3-bis[3,5-di(pyridin-3-yl)phenyl]benzene (BmPyPhB), diphenyl(4-(triphenylsilyl)phenyl)phosphine oxide (TSPO1) or a mixture thereof.

[0185] The organic electron transport layer O-ETL may be formed using the same material and the same manufacturing method on the emission layers EL-Ra, EL-Ga, and EL-Ba of the first light emitting element ED-Ra, the second light emitting element ED-Ga, and the third light emitting element ED-Ba.

[0186] When the first light-emitting element ED-Ra, the second light-emitting element ED-Ga, and the third light-emitting element ED-Ba each have FIG. 5A to FIG. 5C In some embodiments, when an organic electron transport layer O-ETL including an organic electron transport material is included, the protective layer PIL-a may be on the emission layer EL-Ba of the third light emitting element ED-Ba including an inorganic light emitting body.

[0187] In the third light-emitting element ED-Ba, the protective layer PIL-a is directly between the emission layer EL-Ba including the quantum dots QD-B and the organic electron transport layer O-ETL, and thus can prevent or reduce direct contact between the quantum dots QD-B of the emission layer EL-Ba and the organic electron transport material.

[0188] The protective layer PIL-a is between the emission layer EL-Ba and the organic electron transport layer O-ETL, and thus can prevent quenching in the emission layer EL-Ba due to the organic electron transport material (or reduce the possibility or amount of such quenching). In some embodiments, even when the third light-emitting element ED-Ba including an inorganic emission layer is provided with the same organic electron transport material as the first light-emitting element ED-Ra and the second light-emitting element ED-Ga including an organic emission layer, the excellent luminous efficiency of the third light-emitting element ED-Ba can be maintained without reducing the luminous efficiency.

[0189] When the protective layer PIL-a is provided on the emission layer EL-Ba including the inorganic light emitting body, a portion of the protective layer PIL-a may be provided to penetrate between the emission layers EL-Ba. A portion of the protective layer E-PIL may penetrate between the quantum dots QD-B as the inorganic light emitting body and may fill the space between the quantum dots QD-B. Figure 5A , the protective layer PIL-a is shown as entering only the upper portion of the emission layer EL-Ba, but the embodiments of the present disclosure are not limited thereto, and the protective layer PIL-a may enter only the lower portion of the emission layer EL-Ba or a portion of the upper portion of the emission layer EL-Ba.

[0190] In the case of an inorganic light emitting body such as quantum dots QD-B, the above may result in voids between a plurality of inorganic particles, and when a protective layer ink is provided on the upper portion of the emission layer EL-Ba to form a protective layer E-PIL, due to the fluidity of the protective layer ink, a portion of the protective layer ink will enter the space between the quantum dots QD-B and will maintain the form in which the protective layer E-PIL has entered.

[0191] In the third light-emitting element ED-Ba, the protective layer PIL-a may have a thickness of about To about Thickness t PI The thickness t of the protective layer PIL-a on the emission layer EL-Ba as the inorganic emission layer of the third light-emitting element ED-Ba is PI It may be defined as a gap between the uppermost surface of the emission layer EL-Ba defined by the quantum dots QD-B constituting the emission layer EL-Ba and the organic electron transport layer O-ETL.

[0192] When the thickness of the protective layer PIL-a is PI Less than approximately When the thickness of the protective layer PIL-a is t PI Greater than approximately When the protective layer PIL-a is used as an insulating layer (eg, an electrical insulating layer), it is difficult for electrons to move, resulting in reduced light emitting efficiency.

[0193] Included in Figure 3 The first light emitting element ED-R, the second light emitting element ED-G and the third light emitting element ED-B in the display device DD of the embodiment shown in FIG. FIG. 4A to FIG. 4C A combination of the light emitting elements ED-R, ED-G and ED-B shown in or FIG. 5A to FIG. 5C A combination of light-emitting elements ED-Ra, ED-Ga and ED-Ba shown in FIG.

[0194] In the display device DD of some embodiments, Figure 3 In the embodiment of the present invention, two light-emitting elements selected from the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B are inorganic light-emitting elements, and the other light-emitting element is an organic light-emitting element, an inorganic electron transport layer is included in all the light-emitting elements ED-R, ED-G and ED-B, and a protective layer is included in the organic light-emitting element among the light-emitting elements ED-R, ED-G and ED-B, and therefore, the interface property between the emission layer of the organic light-emitting element and the inorganic electron transport layer can be improved, thereby obtaining excellent light emission efficiency. In the display device DD of some embodiments, from Figure 3Two light-emitting elements selected from the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B may be organic light-emitting elements, and the other light-emitting element may be an inorganic light-emitting element, an organic electron transport layer is included in all the light-emitting elements ED-R, ED-G and ED-B, and a protective layer is included in the inorganic light-emitting elements among the light-emitting elements ED-R, ED-G and ED-B, and therefore, the interface properties between the emission layer of the inorganic light-emitting element and the organic electron transport layer can be improved, thereby obtaining excellent luminous efficiency.

[0195] In some embodiments, the third light-emitting element ED-B disposed corresponding to the third light-emitting region PXA-B emitting blue light includes an organic light-emitting body in the emission layer EL-B, and includes a blue organic light-emitting body having a longer service life than the blue quantum dot in the emission layer EL-B, and therefore, the third light-emitting element ED-B can also exhibit excellent luminous efficiency and service life. In addition, the electron transport region ETR of the first light-emitting element ED-R, the second light-emitting element ED-G, and the third light-emitting element ED-B includes an inorganic electron transport layer, and therefore, due to the excellent electron mobility of the inorganic electron transport material, the light-emitting element can have a provided luminous efficiency due to the increase in electron mobility. In addition, the third light-emitting element ED-B also includes a protective layer between the organic emission layer and the inorganic electron transport layer, and therefore, the excellent luminous efficiency can be maintained without quenching in the emission layer.

[0196] Figure 6 is a cross-sectional view of a display device according to an embodiment. Figure 6 is with Figure 1 A cross-sectional view of the portion corresponding to line II-II'. Figure 6 The display device DD-1 of the embodiment shown in FIG. Figure 3 The display device DD of the embodiment shown in FIG. 1 differs only in the components of the display layer EDL- 1 . Figure 6 The components in the Figure 3 The components of the display device DD in FIG. 1 overlap with those of the display device DD in FIG. 1 , and the differences will be mainly described.

[0197] refer to Figure 6 In the display layer EDL-1 included in the display device DD-1 of the embodiment, the first light emitting element ED-R and the second light emitting element ED-G may include the protective layer PIL, and the third light emitting element ED-B may not include the protective layer PIL.

[0198] In the display device DD-1 of the embodiment, the first light emitting element ED-R and the second light emitting element ED-G are organic light emitting elements and the third light emitting element ED-B is an inorganic light emitting element, and the electron transport region ETR may include an inorganic electron transport material. In some embodiments, the protective layer PIL may be between the electron transport region ETR including the inorganic electron transport material and the emission layers EL-R and EL-G of the organic light emitting element. In some embodiments, the first light emitting element ED-R and the second light emitting element ED-G may have a stacked structure of light emitting elements, which is similar to Figure 4C However, unlike Figure 4C In comparison, there may be differences in the dopant material of the emission layer, and therefore, there may be differences in the emission wavelength.

[0199] In some embodiments, in the display device DD-1, the first light emitting element ED-R and the second light emitting element ED-G are inorganic light emitting elements and the third light emitting element ED-B is an organic light emitting element, and the electron transport region ETR may include an organic electron transport material. In some embodiments, the protective layer PIL may be between the electron transport region ETR including the organic electron transport material and the emission layers EL-R and EL-G of the inorganic light emitting element. In some embodiments, the first light emitting element ED-R and the second light emitting element ED-G may have a stacked structure of light emitting elements, which is similar to Figure 5C However, unlike Figure 5C In contrast, there are differences in the emission wavelengths of the inorganic phosphors included in the emission layer.

[0200] In the display device DD-1 of the embodiment, Figure 3 In the embodiment of the display device DD-1, two light-emitting elements selected from the first light-emitting element ED-R, the second light-emitting element ED-G, and the third light-emitting element ED-B are inorganic light-emitting elements and the other light-emitting element is an organic light-emitting element, an organic electron transport layer is included in all the light-emitting elements ED-R, ED-G, and ED-B, and a protective layer PIL may be included in each of the inorganic light-emitting elements among the light-emitting elements ED-R, ED-G, and ED-B, and thus, the interface properties between the emission layer of the inorganic light-emitting element and the organic electron transport layer may be improved, thereby obtaining excellent light-emitting efficiency. Figure 3Two light-emitting elements selected from the first light-emitting element ED-R, the second light-emitting element ED-G and the third light-emitting element ED-B are organic light-emitting elements and the other light-emitting element is an inorganic light-emitting element, an inorganic electron transport layer is included in all the light-emitting elements ED-R, ED-G and ED-B, and a protective layer PIL is included in each organic light-emitting element among the light-emitting elements ED-R, ED-G and ED-B, and therefore, the interface properties between the emission layer of the organic light-emitting element and the inorganic electron transport layer can be improved, thereby obtaining excellent luminous efficiency.

[0201] 7A to 8B is a cross-sectional view showing an example of a display layer included in the display device of the embodiment. FIG. 4A to FIG. 5C The description can also be applied to 7A to 8B Components of the light-emitting elements in the display layer are shown in FIG.

[0202] Fig. 7A and Figure 7B This corresponds to the case where the display layers EDL-Oa and EDL-Ob each include an organic electron transport layer O-ETL.

[0203] Fig. 7A The display layer EDL-Oa according to the embodiment shown in may include two inorganic light emitting elements QED1-O and QED2-O and one organic light emitting element OED-O. In some embodiments, the organic light emitting element OED-O may be any one of a blue light emitting element, a green light emitting element, and a red light emitting element, and the other light emitting elements may each be an inorganic light emitting element QED1-O and QED2-O. In the display layer EDL-Oa according to the embodiment, the protective layer PIL-a may be between the inorganic emission layers QEL-1 and QEL-2 of the inorganic light emitting elements QED1-O and QED2-O and the organic electron transport layer O-ETL. Fig. 7A , the first inorganic light emitting element QED1-O, the second inorganic light emitting element QED2-O, and the organic light emitting element OED-O are illustrated as being arranged in this order, but the arrangement order is not limited thereto.

[0204] Figure 7B The display layer EDL-Ob according to the embodiment shown in the figure may include two organic light emitting elements OED1-O and OED2-O and one inorganic light emitting element QED-O. In some embodiments, the inorganic light emitting element QED-O may be any one of a blue light emitting element, a green light emitting element, and a red light emitting element, and the other light emitting elements may each be an organic light emitting element OED1-O and OED2-O. In the display layer EDL-Oa according to the embodiment, the protective layer PIL-a may be between the inorganic emission layer QEL of the inorganic light emitting element QED-O and the organic electron transport layer O-ETL. Figure 7B , the inorganic light emitting element QED-O, the first organic light emitting element OED1-O, and the second organic light emitting element OED2-O are shown to be arranged in this order, but the arrangement order is not limited thereto.

[0205] Fig. 8A and Figure 8B This corresponds to the case where the display layers EDL-Ia and EDL-Ib each include an inorganic electron transport layer I-ETL.

[0206] Fig. 8A The display layer EDL-Ia according to the embodiment shown in may include two organic light emitting elements OED1-I and OED2-I and one inorganic light emitting element QED-I. In some embodiments, the inorganic light emitting element QED-I may be any one of a blue light emitting element, a green light emitting element, and a red light emitting element, and the other light emitting elements may each be an organic light emitting element OED1-I and OED2-I. In the display layer EDL-Ia according to the embodiment, the protective layer PIL may be between the organic emission layers OEL-1 and OEL-2 of the organic light emitting elements OED1-I and OED2-I and the inorganic electron transport layer I-ETL. Fig. 8A , the first organic light emitting element OED1-I, the second organic light emitting element OED2-I, and the inorganic light emitting element QED-I are shown to be arranged in this order, but the arrangement order is not limited thereto.

[0207] Figure 8B The display layer EDL-Ib according to the embodiment shown in the figure may include two inorganic light emitting elements QED1-I and QED2-I and one organic light emitting element OED1-I. In some embodiments, the organic light emitting element OED1-I may be any one of a blue light emitting element, a green light emitting element, and a red light emitting element, and the other light emitting elements may each be an inorganic light emitting element QED1-I and QED2-I. In the display layer EDL-Ib according to the embodiment, the protective layer PIL may be between the organic emission layer OEL of the organic light emitting element OED1-I and the inorganic electron transport layer I-ETL. Figure 8B , it is shown that the organic light emitting element OED1-I, the first inorganic light emitting element QED1-I, and the second inorganic light emitting element QED2-I are arranged in this order, but the arrangement order is not limited thereto.

[0208] Include reference 7A to 8B The display device of the embodiment of the display layer described according to the embodiment also includes a protective layer including a polar polymer between the organic emission layer and the inorganic electron transport layer in the light-emitting element or between the inorganic emission layer and the organic electron transport layer, and therefore can exhibit excellent luminous efficiency and service life through improved interface properties.

[0209] 9A to 9E are cross-sectional views each showing a part of a method for manufacturing a display device according to an embodiment.

[0210] According to an embodiment, the method for manufacturing a display device may include: forming a circuit layer on a substrate layer; and forming a display layer on the circuit layer, the display layer including a pixel defining layer having a plurality of pixel openings defined on the circuit layer and an inorganic light-emitting element and an organic light-emitting element separated by the pixel defining layer. In some embodiments, forming the display layer may include: sequentially providing a hole transport region, an inorganic emission layer including quantum dots, and an electron transport region in at least one pixel opening among the plurality of pixel openings by an inkjet printing method to form an inorganic light-emitting element; and sequentially providing a hole transport region, an organic emission layer including an organic light-emitting material, and an electron transport region in other pixel openings among the plurality of pixel openings by an inkjet printing method to form an organic light-emitting element.

[0211] In some embodiments, forming an inorganic light emitting element or forming an organic light emitting element may include providing a protective layer ink between the inorganic emission layer and the electron transport region or between the organic emission layer and the electron transport region by an inkjet printing method to form a protective layer. In some embodiments, the protective layer ink may include a polar polymer and a polar organic solvent.

[0212] In some embodiments, the formation of the organic-inorganic light-emitting element and the formation of the organic light-emitting element may not be performed sequentially, but the formation of the inorganic light-emitting element and the hole transport region and the formation of the hole transport region of the inorganic light-emitting element may be performed as a single process. In some embodiments, the formation of the inorganic light-emitting element and the emission layer and the formation of the emission layer of the inorganic light-emitting element may be performed in a single process, or the formation of the inorganic light-emitting element and the electron transport region and the formation of the electron transport region of the inorganic light-emitting element may be performed in a single process.

[0213] The hole transport regions of the inorganic light emitting element and the organic light emitting element can be formed in the same process before providing each emission layer by providing the same hole transport material, and the electron transport regions of the inorganic light emitting element and the organic light emitting element can also be formed in the same process after providing each emission layer by using the same electron transport material.

[0214] By reference 9A to 9E The display device manufactured by the method for manufacturing a display device according to the embodiment described in the examples may have a reference Figures 1 to 8B Therefore, the same reference numerals are used for the structure of the display device of the embodiment described in the embodiment of FIG. Figures 1 to 8B The contents of the display device component description may also be applied to 9A to 9E Each component of the display device is shown in FIG.

[0215] As an example in 9A to 9E A portion of the method for manufacturing a display device shown in FIG. Figure 3 , Figure 4C and Figure 5C The structure of the display device DD and the light emitting elements ED-R, ED-G and ED-B described above is presented as an example and can also be applied to the reference Figures 6 to 8B The structure of the display device is described.

[0216] In the method for manufacturing a display device of the embodiment, a circuit layer DP-CL may be formed on the base layer BS, and a pixel defining layer PDL may be formed on the circuit layer DP-CL. As an example, Fig.9A The display layer EDL including the pixel defining layer PDL in which a plurality of pixel openings OH-1, OH-2 and OH-3 are defined is shown (see FIG. Figure 3 ) part.

[0217] Before forming the pixel defining layer PDL, a first electrode AE ​​may be formed on the circuit layer DP-CL. The first electrode AE ​​may be patterned on the circuit layer DP-CL. An upper surface of each of the plurality of spaced-apart first electrodes AE may be exposed through each of the pixel openings OH-1, OH-2, and OH-3. An edge portion of the first electrode AE ​​may partially overlap the pixel defining layer PDL.

[0218] Each of the pixel openings OH-1, OH-2, and OH-3 may correspond to Figure 3 Each of the first light emitting area PXA-R, the second light emitting area PXA-G, and the third light emitting area PXA-B described in .

[0219] As an example, Fig. 9B The formation of the display layer EDL (see Figure 3 ) part. Fig. 9B It is shown that a hole transport region HTR is formed on the first electrode AE ​​and emission layer inks IK-Q1, IK-Q2, and IK-O are provided on the hole transport region HTR to form an emission layer.

[0220] In some embodiments, the hole transport region HTR may be formed by providing a hole transport material on the first electrode AE ​​using an inkjet printing method.

[0221] A hole transport region HTR may be formed in the first pixel opening OH-1, and a first inorganic emission layer ink IK-Q1 including an inorganic luminescent body may be provided on the hole transport region HTR. The first inorganic emission layer ink IK-Q1 may be provided through a nozzle NZ of an inkjet printing device.

[0222] A hole transport region HTR may be formed in the second pixel opening OH-2, and a second inorganic emission layer ink IK-Q2 including an inorganic luminophor may be provided on the hole transport region HTR. The second inorganic emission layer ink IK-Q2 may be provided through a nozzle NZ of an inkjet printing device.

[0223] A hole transport region HTR may be formed in the third pixel opening OH-3, and an organic emission layer ink IK-O including an organic light emitting body may be provided on the hole transport region HTR. The organic emission layer ink IK-O may be provided through a nozzle NZ of an inkjet printing device.

[0224] The first inorganic emission layer ink IK-Q1, the second inorganic emission layer ink IK-Q2, and the organic emission layer ink IK-O may each be provided in the pixel openings OH-1, OH-2, and OH-3 by an inkjet printing method to form emission layers QEL-1, QEL-2, and OEL (see Fig. 9C ). The first inorganic emission layer ink IK-Q1 and the second inorganic emission layer ink IK-Q2 may each contain quantum dots as an inorganic light emitting body, and the organic emission layer ink IK-O may contain a light emitting dopant as an organic light emitting body.

[0225] Fig. 9C It is shown that a protective layer ink is provided to form a protective layer PIL (see Figure 3 ) diagram. Fig. 9C , a first inorganic emission layer QEL-1 may be formed in the first pixel opening OH-1, a second inorganic emission layer QEL-2 may be formed in the second pixel opening OH-2, and an organic emission layer OEL may be formed in the third pixel opening OH-3. The first inorganic emission layer QEL-1 and the second inorganic emission layer QEL-2 and the organic emission layer OEL may each be formed using an inkjet printing method.

[0226] In the method for manufacturing a display device according to an embodiment, a protective layer ink PIK may be provided on the organic emission layer OEL. The protective layer ink PIK may be provided through a nozzle NZ of an inkjet printing device. The protective layer ink PIK may contain a polar polymer and a polar organic solvent.

[0227] For example, the protective layer ink PIK may be a polar polymer and include poly(ethylene glycol), poly(4-vinylpyridine), polyvinyl pyrrolidone and / or polyethyleneimine. In some embodiments, the protective layer ink PIK may include dimethyl sulfoxide, ethylene glycol and / or an ether solvent as a polar organic solvent.

[0228] In an embodiment, the polar polymer included in the protection layer ink PIK may be highly soluble in a polar organic solvent.

[0229] The protective layer ink PIK is prepared to contain a polar organic solvent so that its viscosity can be adjusted to facilitate its use in inkjet printing equipment, and can be easily ejected in a set or fixed amount at a volume set at the nozzle NZ, etc. In some embodiments, when water is used as a solvent, the protective layer ink PIK is not easily ejected from the nozzle NZ due to the high surface tension of water, but in the case of using a polar organic solvent, the protective layer ink PIK can be easily ejected from the ejection portion of the nozzle NZ. It can be easily discharged without condensation. For example, the protective layer ink PIK can be easily ejected without clogging the nozzle NZ or substantially clogging the nozzle NZ. Therefore, the protective layer ink PIK can maintain excellent application properties.

[0230] As an example, Fig.9D The formation of the electron transport layer by an inkjet printing method is shown. Fig.9D It is shown that an inorganic electron transport material IK-IET is provided to form an electron transport layer.

[0231] An inorganic electron transport material IK-IET may be provided directly on the first inorganic emission layer QEL-1, the second inorganic emission layer QEL-2, and the protective layer PIL. An inorganic electron transport material IK-IET may be provided on each of the first inorganic emission layer QEL-1 in the first pixel opening OH-1 and the second inorganic emission layer QEL-2 in the second pixel opening OH-2, and an inorganic electron transport material IK-IET may be provided on the protective layer PIL in the third pixel opening OH-3.

[0232] The same inorganic electron transport material IK-IET may be provided corresponding to the first pixel opening OH-1, the second pixel opening OH-2, and the third pixel opening OH-3. In some embodiments, the same electron transport material IK-IET is provided on the inorganic emission layers QEL-1 and QEL-2 and the organic emission layer OEL having different light-emitting material properties in a single process, and thus, the problem of reduced process productivity that occurs when the electron transport material is changed according to the material properties of the emission layer can be improved.

[0233] In some embodiments, the method for manufacturing a display device of the embodiment includes forming a protective layer PIL on the organic emission layer OEL to provide the same electron transport material IK-IET on the inorganic emission layers QEL-1 and QEL-2 and the organic emission layer OEL through a single process, thereby achieving excellent process productivity effects.

[0234] Fig.9E Shown by 9A to 9DThe preliminary display panel P-DP may include a hole transport region HTR, inorganic emission layers QEL-1 and QEL-2, and an inorganic electron transport layer I-ETL sequentially provided in the first pixel opening OH-1 and the second pixel opening OH-2 by inkjet printing, and a hole transport region HTR, an organic emission layer OEL, a protective layer PIL, and an inorganic electron transport layer I-ETL sequentially provided in the third pixel opening OH-3 by inkjet printing.

[0235] The preliminary display panel P-DP represents a part of the method for manufacturing the display device, and then additionally, a second electrode CE ( Figure 3 )、CPL( Figure 3 ) and encapsulation layer TFE( Figure 3 ) to manufacture a display panel DP( Figure 3 ).

[0236] In some embodiments, with reference to 9A to 9E Different from the description, the electron transport layer can be formed as an organic electron transport layer by providing an organic electron transport material, and in some embodiments, when an inorganic light-emitting element including an inorganic emission layer is formed among the light-emitting elements, a protective layer can be formed before forming the emission layer and forming the organic electron transport layer.

[0237] The method for manufacturing a display device of an embodiment includes forming a protective layer between an emission layer and an electron transport layer using a protective layer ink including a polar polymer in any one of forming an inorganic light-emitting element and forming an organic light-emitting element, and thus a display device with excellent luminous efficiency can be provided. In some embodiments, the method for manufacturing a display device of an embodiment includes: in any one of forming an inorganic light-emitting element and forming an organic light-emitting element, forming a protective layer between an emission layer and an electron transport layer using a protective layer ink including a polar polymer, so as to provide the same electron transport material to form an electron transport layer when forming an inorganic light-emitting element and forming an organic light-emitting element, thereby achieving excellent process productivity.

[0238] Hereinafter, the results of evaluating the properties of the light emitting element according to the embodiment included in the display device of the embodiment will be described with reference to examples and comparative examples. The following examples and comparative examples are provided only for understanding the subject matter of the present disclosure, and the scope of the present disclosure is not limited thereto.

[0239] Manufacturing of light-emitting components

[0240] The light-emitting elements of Comparative Example 1 and Example 1 correspond to light-emitting elements that emit green light. The light-emitting elements of Comparative Example 1 and Example 1 differ in the presence or absence of a protective layer.

[0241] ITO glass substrate (15Ω / cm 2 ) was cut into a size of 50 mm × 50 mm × 0.7 mm, and then ultrasonically cleaned in isopropyl alcohol and pure water for 30 minutes each to prepare a first electrode. A hole injection layer, a hole transport layer, an emission layer, and an electron transport layer were sequentially formed on the first electrode. The hole injection layer, hole transport layer, emission layer, and electron transport layer of Comparative Example 1 and Example 1 for evaluating the light-emitting element were each formed using a spin coating method.

[0242] Specifically, the cleaned first electrode was spin-coated with PEDOT / PSS (weight ratio of 5:5) to form a 60 nm thick film, and the resulting product was then baked at 200° C. for 30 minutes to form a hole injection layer. The hole injection layer was spin-coated with [(9,9-dioctylfluorenyl-2,7-diyl)-(4,4'-(N-(4-butylphenyl)))] alternating copolymer (TFB) to form a 20 nm thick film, and the resulting product was then baked at 240° C. for 10 minutes to form a hole transport layer.

[0243] The hole transport layer was spin-coated with the emission layer composition to form a 30 nm thick film, and the resultant was then baked at 140° C. for 10 minutes to form an emission layer. The emission layer was formed of quantum dots having a core of InP and a shell of ZnS.

[0244] Then, in Comparative Example 1, the emission layer was spin-coated with the electron transport layer composition to form a 20 nm thick electron transport layer. The electron transport layer was formed of the organic electron transport material of OET-1 below.

[0245]

[0246] Then, the electron transport layer was vacuum-deposited with Al to form a 100 nm-thick second electrode, thereby manufacturing the light-emitting element of Comparative Example 1.

[0247] In the light-emitting element of Example 1, a 10 nm thick film was formed on an emission layer formed of quantum dots having a core of InP and a shell of ZnS using polyethyleneimine, and then baked at 140° C. for 10 minutes to form a protective layer. Unlike Comparative Example 1, Example 1 was manufactured by sequentially forming an electron transport layer formed of OET-1 on the protective layer after forming the protective layer and a second electrode.

[0248] The light-emitting elements of Comparative Example 2 and Example 2 correspond to light-emitting elements that emit blue light. The light-emitting elements of Comparative Example 2 and Example 2 differ in the presence or absence of a protective layer.

[0249] ITO glass substrate (15Ω / cm 2 ) was cut into a size of 50 mm × 50 mm × 0.7 mm, and then ultrasonically cleaned in isopropyl alcohol and pure water for 30 minutes each to prepare a first electrode. A hole injection layer, a hole transport layer, an emission layer, and an electron transport layer were sequentially formed on the first electrode. The hole injection layer, hole transport layer, emission layer, and electron transport layer of Comparative Example 2 and Example 2 for evaluating the light-emitting element were each formed using a spin coating method.

[0250] Specifically, the cleaned first electrode was spin-coated with PEDOT / PSS (weight ratio of 5:5) to form a 60 nm thick film, and the resulting product was then baked at 200° C. for 30 minutes to form a hole injection layer. The hole injection layer was spin-coated with TFB to form a 20 nm thick film, and the resulting product was then baked at 240° C. for 10 minutes to form a hole transport layer.

[0251] The hole transport layer was spin-coated with the emission layer composition to form a 30 nm thick film, and the resultant was then baked at 140° C. for 10 minutes to form an emission layer.

[0252] The blue host material and the blue dopant material used to form the emission layers in Comparative Example 2 and Example 2 are as follows.

[0253] Blue main material

[0254]

[0255] Blue dopant materials

[0256]

[0257] Then, in Comparative Example 2, the emission layer was spin-coated with an electron transport layer composition to form a 20 nm thick electron transport layer. The electron transport layer was formed of ZnMgO. Then, Al was vacuum-deposited on the electron transport layer to form a 100 nm thick second electrode, thereby manufacturing the light-emitting element of Comparative Example 2.

[0258] In the light-emitting element of Example 2, a 10 nm thick film was formed on the emission layer using polyethyleneimine, and then the film was baked at 140° C. for 10 minutes to form a protective layer. Unlike Comparative Example 2, in Example 2, after the protective layer was formed, an electron transport layer was formed of ZnMgO on the protective layer. Thereafter, a second electrode was sequentially formed on the electron transport layer.

[0259] When manufacturing the light-emitting elements of the comparative example and the example, the second electrode was deposited using a Suicel plus200 deposition machine from Sunic System.

[0260] In addition, the driving voltage, luminous efficiency, and color coordinates of the light emitting elements of the comparative example and the example were measured using a Keithley SMU 236 and a luminance meter PR650.

[0261] Table 1 shows the results of evaluating the light emitting elements of Comparative Examples 1 and 2 and Examples 1 and 2.

[0262] Table 1

[0263]

[0264] Comparing Comparative Example 1 with Example 1, it can be seen that in Example 1, the driving voltage partially rises, but the luminous efficiency is significantly improved. In addition, from the color coordinates showing similar values, it can be seen that Example 1, in which a protective layer is introduced, shows similar optical properties and significantly improved luminous efficiency compared to Comparative Example 1. Comparing Comparative Example 2 with Example 2, it can be seen that Example 2 shows a driving voltage similar to that of Comparative Example 2, and has significantly improved luminous efficiency. In addition, from the color coordinates showing similar values, it can be seen that Example 2, in which a protective layer is introduced, shows similar optical properties and significantly improved luminous efficiency compared to Comparative Example 2.

[0265] That is, in the case of Comparative Example 1 and Example 1 including an inorganic emission layer and an organic electron transport layer as components of a light-emitting element, it is seen that excellent luminous efficiency is achieved by including a protective layer including a polar polymer between the inorganic emission layer and the organic electron transport layer. In addition, in the case of Comparative Example 2 and Example 2 including an organic emission layer and an inorganic electron transport layer as components of a light-emitting element, it is seen that excellent luminous efficiency is achieved by including a protective layer including a polar polymer between the organic emission layer and the inorganic electron transport layer.

[0266] The display device of the embodiment may include both an inorganic light emitting element and an organic light emitting element, include the same electron transport layer in the inorganic light emitting element and the organic light emitting element, and include a protective layer formed of a polar polymer between the emission layer and the electron transport layer of the inorganic light emitting element or the organic light emitting element. Therefore, the quenching problem caused by the difference in material properties between the organic emission layer and the inorganic electron transport layer or between the inorganic emission layer and the organic electron transport layer is improved, and thus the display device can exhibit excellent luminous efficiency and display quality.

[0267] The method for manufacturing a display device of an embodiment includes: in one of forming an inorganic light-emitting element and forming an organic light-emitting element, forming a protective layer between an emission layer and an electron transport layer to provide the same electron transport material to both the inorganic light-emitting element and the organic light-emitting element in a single process by the same manufacturing method, thereby showing excellent productivity. In addition, the method for manufacturing a display device of an embodiment includes: in one of forming an inorganic light-emitting element and forming an organic light-emitting element, forming a protective layer between an emission layer and an electron transport layer to improve quenching caused by a difference in material properties between the emission layer and the electron transport layer, and thus a display device with improved luminous efficiency can be provided.

[0268] When the display device of the embodiment includes both an organic light-emitting element and an inorganic light-emitting element having different emission layer material properties, the same electron transport material is provided between the emission layer and the electron transport layer, and thus provided on the emission layer, and therefore, the display device of the embodiment can exhibit excellent light efficiency.

[0269] The display device of the embodiment includes a protective layer between the emission layer and the electron transport layer having material properties different from those of the organic layer and the inorganic layer to improve the quenching property in the emission layer according to the difference in material properties between the emission layer and the electron transport layer, and thus can exhibit excellent luminous efficiency.

[0270] The display device of the embodiment can provide an electron transport material of the same material on each emission layer of the organic light-emitting element and the inorganic light-emitting element, and thus can exhibit excellent processability, and can be used to manufacture a display device having excellent luminous efficiency in both the organic light-emitting element and the inorganic light-emitting element.

[0271] Although the subject matter of the present disclosure has been described with reference to example embodiments thereof, it will be understood that the subject matter of the present disclosure should not be limited to these example embodiments, but various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the present disclosure.

[0272] Therefore, the technical scope of the present disclosure is not intended to be limited to the contents set forth in the detailed description of the specification, but is intended to be defined by the appended claims and their equivalents.

Claims

1. A display device, wherein: The display device comprises: Base layer; A circuit layer, on the substrate layer; a pixel defining layer on the circuit layer and having a plurality of pixel openings defined in the pixel defining layer; and a plurality of light-emitting elements, each comprising a hole transport region, an emission layer and an electron transport region stacked sequentially, and the plurality of light-emitting elements are on the circuit layer, Wherein, the plurality of light emitting elements include: an inorganic light emitting element, comprising an inorganic light emitting body in the emission layer; and An organic light emitting element includes an organic light emitting body in the emission layer, and The inorganic light emitting element or the organic light emitting element includes a protective layer between the emission layer and the electron transport region and including a polar polymer.

2. The display device according to claim 1, wherein: The protective layer includes poly(ethylene glycol), poly(4-vinylpyridine), polyvinylpyrrolidone and / or polyethyleneimine.

3. The display device according to claim 1, wherein: The polar polymer is soluble in a polar organic solvent.

4. The display device according to claim 3, wherein: The polar organic solvent includes dimethyl sulfoxide, ethylene glycol and / or ether solvent.

5. The display device according to claim 1, wherein: The protective layer has to The thickness of The thickness of the protective layer is a distance from the uppermost portion of the emission layer of the inorganic light emitting element or the organic light emitting element including the protective layer to the electron transport region.

6. The display device according to claim 1, wherein: The electron transport region includes an inorganic electron transport material, and the organic light emitting element includes the protective layer.

7. The display device according to claim 6, wherein: The electron transport region includes an electron transport layer, and the electron transport layer includes the inorganic electron transport material. In the inorganic light-emitting element, the electron transport layer is directly on the emission layer, and In the organic light emitting element, the protective layer is directly between the electron transport layer and the emission layer.

8. The display device according to claim 1, wherein: The electron transport region includes an organic electron transport material, and the inorganic light emitting element includes the protective layer.

9. The display device according to claim 8, wherein: The electron transport region includes an electron transport layer, and the electron transport layer includes the organic electron transport material. In the organic light emitting element, the electron transport layer is directly on the emission layer, and In the inorganic light-emitting element, the protective layer is directly between the electron transport layer and the emission layer.

10. The display device according to claim 8, wherein: The inorganic light emitter includes a plurality of quantum dots, and The protective layer of the inorganic light emitting element is located on the emission layer and penetrates between the plurality of quantum dots.

11. The display device according to claim 1, wherein: The hole transport region, the emission layer, and the electron transport region are stacked and provided in each of the plurality of pixel openings, and The hole transport region included in the inorganic light emitting element and the hole transport region included in the organic light emitting element are the same, and the electron transport region included in the inorganic light emitting element and the electron transport region included in the organic light emitting element are the same.

12. A display device, wherein: The display device includes a red light emitting region, a green light emitting region, and a blue light emitting region that are different from each other when viewed on a plane, The display device comprises: Base layer; a circuit layer on the base layer; and The display layer includes a red light emitting element corresponding to the red light emitting area, a green light emitting element corresponding to the green light emitting area, and a blue light emitting element corresponding to the blue light emitting area, and the display layer is on the circuit layer. wherein the red light emitting element, the green light emitting element and the blue light emitting element each include a hole transport region, an emission layer and an electron transport region stacked sequentially, One or two light-emitting elements selected from the red light-emitting element, the green light-emitting element, and the blue light-emitting element are inorganic light-emitting elements including quantum dots in the emission layer, and the other light-emitting element selected from the red light-emitting element, the green light-emitting element, and the blue light-emitting element are organic light-emitting elements including organic light-emitting materials in the emission layer, and The inorganic light emitting element or the organic light emitting element includes a protective layer between the emission layer and the electron transport region and including a polar polymer.

13. The display device according to claim 12, wherein: The protective layer includes poly(ethylene glycol), poly(4-vinylpyridine), polyvinylpyrrolidone and / or polyethyleneimine.

14. The display device according to claim 12, wherein: The electron transport region of the inorganic light emitting element and the electron transport region of the organic light emitting element include an inorganic electron transport layer, the inorganic electron transport layer includes an inorganic electron transport material, and The protective layer is directly between the emission layer and the inorganic electron transport layer of the organic light emitting element.

15. The display device according to claim 12, wherein: The electron transport region of the inorganic light emitting element and the electron transport region of the organic light emitting element include an organic electron transport layer, the organic electron transport layer includes an organic electron transport material, and The protective layer is directly between the emission layer and the organic electron transport layer of the inorganic light emitting element.

16. The display device according to claim 12, wherein: The red light-emitting element and the green light-emitting element are the inorganic light-emitting elements, and the blue light-emitting element is the organic light-emitting element.

17. A method for manufacturing a display device, wherein: The method comprises: forming a circuit layer on the base layer; and forming a display layer on the circuit layer, the display layer comprising a pixel defining layer having a plurality of pixel openings defined on the circuit layer and an inorganic light emitting element and an organic light emitting element separated by the pixel defining layer, Wherein, the forming of the display layer comprises: sequentially providing a hole transport region, an inorganic emission layer including quantum dots, and an electron transport region in at least one pixel opening of the plurality of pixel openings by an inkjet printing method to form the inorganic light emitting element; and sequentially providing the hole transport region, the organic emission layer including an organic light emitting material, and the electron transport region in other pixel openings of the plurality of pixel openings by an inkjet printing method to form the organic light emitting element, and The forming of the inorganic light-emitting element or the forming of the organic light-emitting element includes providing a protective layer ink between the inorganic emission layer and the electron transport region or between the organic emission layer and the electron transport region to form a protective layer by the inkjet printing method, and the protective layer ink includes a polar polymer and a polar organic solvent.

18. The method according to claim 17, wherein: The polar polymer includes poly(ethylene glycol), poly(4-vinylpyridine), polyvinylpyrrolidone and / or polyethyleneimine.

19. The method according to claim 17, wherein: The polar organic solvent includes dimethyl sulfoxide, ethylene glycol and / or ether solvent.

20. The method according to claim 17, wherein: The electron transport region formed in the forming of the inorganic light emitting element and the electron transport region formed in the forming of the organic light emitting element include electron transport layers formed using the same electron transport material.

21. The method according to claim 20, wherein: The electron transport material comprises an organic electron transport material, and The forming of the inorganic light emitting element includes forming the protective layer between the inorganic emission layer and the electron transport layer.

22. The method according to claim 20, wherein: The electron transport material comprises an inorganic electron transport material, and The forming of the organic light emitting element includes forming the protective layer between the organic emission layer and the electron transport layer.

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