MEMS sensor
By designing an isolation structure with matching thermal expansion coefficients in the MEMS sensor, the thermal stress problem caused by the different thermal expansion coefficients of ASIC chips and MEMS chips is solved, reducing the drift of the output signal and improving the stability of the sensor performance.
Patent Information
- Application Number
- CN202411747510.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-29
- Publication Date
- 2025-02-28
AI Technical Summary
After thermal cycle, the existing MEMS sensors have different thermal expansion coefficients of ASIC chips and MEMS chips, resulting in structural strain mismatch, resulting in thermal stress field, affecting sensor performance.
A MEMS sensor is designed. By setting an isolation structure between the ASIC chip and the MEMS chip, the isolation part and the ASIC chip are laminated and spaced, and the MEMS chip is connected, and the ASIC chip and the MEMS chip are laminated and spaced. The thermal expansion coefficient of the isolation structure matches the thermal expansion coefficient of the MEMS chip to reduce the influence of thermal stress on the MEMS chip.
Through the design of the isolation structure, heat transfer to the MEMS chip is reduced, the strain generated after thermal cycling is reduced, thereby weakening the impact of thermal stress on the MEMS chip, reducing the drift of the output signal, and improving the stability of product performance.
Smart Images
Figure CN119528083A_ABST