Organic compound and light-emitting device

Abstract

Provided are a novel organic compound and a light-emitting device. Provided is an organic compound represented by general formula (G1). Note that in the general formula, R1 to R4 each independently represent any of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituent represented by general formula (G1-1); each of R5 to R8 independently represents any of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituent represented by general formula (G1-3); and at least one of R5 to R8 is a substituent represented by general formula (G1-3). # imgabs0 #

Description

Technical Field

[0001] One embodiment of the present invention relates to an organic compound, a light-emitting element, a light-emitting device, a display module, a lighting module, a display device, a light-emitting device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, a product, or a composition of matter. Therefore, more specifically, as an example of the technical field of one embodiment of the present invention disclosed in this specification, a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a storage device, a storage device, an imaging device, a driving method of these devices, or a manufacturing method of these devices can be cited. Background Art

[0002] Light-emitting devices (organic EL devices) that use organic compounds and exploit electroluminescence (EL) are being actively commercialized. The basic structure of these devices consists of an organic compound layer (EL layer) containing a light-emitting material sandwiched between a pair of electrodes. By applying a voltage to the device, carriers are injected, and the recombination energy of these carriers is utilized to produce light from the light-emitting material.

[0003] Because these light-emitting devices are self-luminous, they offer advantages over liquid crystal displays (LCDs) when used in display pixels, such as higher visibility and the absence of a backlight. This makes them particularly suitable for flat-panel displays. Furthermore, displays using these devices can be made thin and lightweight, a significant advantage. Furthermore, they offer exceptionally fast response times.

[0004] Furthermore, because the light-emitting layer of such a light-emitting device can be formed continuously in two dimensions, it can achieve surface emission. This feature is difficult to achieve using point light sources such as incandescent lamps and LEDs, or linear light sources such as fluorescent lamps, and therefore has high utility as a surface light source for applications such as lighting.

[0005] As described above, displays and lighting devices using light-emitting devices are applied to various electronic devices, and research and development are being actively pursued in pursuit of light-emitting devices with better characteristics.

[0006] Low light extraction efficiency is one of the common problems of organic EL devices. To improve light extraction efficiency, a structure has been proposed in which a layer made of a low-refractive-index material is formed inside the EL layer (see, for example, Patent Document 1).

[0007] [Patent Document 1] U.S. Patent Application Publication No. 2020 / 0176692 Summary of the Invention

[0008] An object of one embodiment of the present invention is to provide a light-emitting device with high luminous efficiency. Another object of one embodiment of the present invention is to provide a light-emitting device, a light-emitting apparatus, an electronic device, a display device, or an electronic device with low power consumption.

[0009] The present invention only needs to achieve any one of the above-mentioned objects.

[0010] One embodiment of the present invention is an organic compound represented by General Formula (G1).

[0011] [Chemical Formula 1]

[0012] In the above general formula, R 1 to R 4 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-1), R 5 to R 8 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-3), and R 5 to R 8 At least one of them is a substituent represented by the following general formula (G1-3), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms. n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3.

[0013] [Chemical Formula 2]

[0014] In the above general formula, Ar 13 、Ar 15 and Ar 16Each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 Each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 、Ar 16 and Ar 17 At least two of the n15 and n17 represent a bicyclic or tricyclic monovalent or divalent aromatic hydrocarbon group or a monovalent or divalent aromatic heterocyclic group. n13 represents an integer from 0 to 3, and n14, n15, n16, and n17 each independently represent an integer from 1 to 3. n15+n16+n17>n13+n14.

[0015] In the organic compounds represented by the above-mentioned general formula (G1), general formula (G1-1) and general formula (G1-3), Ar 15 、Ar 16 and Ar 17 At least two of the substituents are naphthalenes, and each naphthalene is bonded to another substituent at the 2-position.

[0016] In the organic compounds represented by the above-mentioned general formula (G1), general formula (G1-1) and general formula (G1-3), Ar 16 and Ar 17 It is naphthalene, each naphthalene is bonded to each other at the 2-position and a partial structure thereof has 2,2'-binaphthyl.

[0017] One embodiment of the present invention is an organic compound represented by General Formula (G1).

[0018] [Chemical Formula 3]

[0019] In the above general formula, R 1 to R 4 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-1), R 5 to R 8 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-2), and R 5 to R 8At least one of them is a substituent represented by the following general formula (G1-2), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 14 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms. n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3.

[0020] [Chemical Formula 4]

[0021] In the above general formula, Ar 13 and Ar 15 Each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 Each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 and Ar 17 At least one of them is phenanthrene, in Ar 17 In the case of phenanthrene, it is bonded to another group at the 2-position or 3-position of the phenanthrene. n13 represents an integer from 0 to 3, and n14, n15, and n17 each independently represent an integer from 1 to 3. n15+n17>n13+n14.

[0022] In the above general formula (G1), general formula (G1-1) and general formula (G1-2), Ar 11 to Ar 17 Each independently represents an aromatic hydrocarbon group.

[0023] In the organic compounds represented by the above-mentioned general formula (G1), general formula (G1-1), and general formula (G1-2), the vapor deposition temperature is 330° C. or lower.

[0024] One embodiment of the present invention is an organic compound represented by Structural Formula (100), Structural Formula (101), Structural Formula (102), Structural Formula (123), or Structural Formula (150).

[0025] [Chemical Formula 5]

[0026] One embodiment of the present invention is an electronic device including an organic compound represented by General Formula (G1).

[0027] One embodiment of the present invention is a light-emitting device, wherein a cap layer includes an organic compound having a carbazole ring and a phenanthrene ring.

[0028] One embodiment of the present invention is a light-emitting device, wherein a cap layer includes an organic compound having a carbazole ring and two or more and four or less naphthalene rings.

[0029] In the above light-emitting device, the organic compound used for the above cap layer has an ordinary light refractive index no of 1.9 or greater and an ordinary light extinction coefficient ko of 0.2 or less at 450 nm.

[0030] In the above light-emitting device, the organic compound used for the above cap layer has an ordinary light refractive index no of 1.8 or greater and an ordinary light extinction coefficient ko of 0.2 or less at 520 nm.

[0031] In the above light-emitting device, the organic compound used for the above cap layer has an ordinary light refractive index no of 1.75 or greater and an ordinary light extinction coefficient ko of 0.2 or less at 630 nm.

[0032] One embodiment of the present invention is a light-emitting device including an organic compound represented by general formula (G1), wherein the difference between the ordinary refractive index no and the extraordinary refractive index ne of the organic compound at any wavelength between 360 nm and 830 nm is 0.1 or more and 0.4 or less.

[0033] [Chemical Formula 6]

[0034] In the above general formula, R 1 to R 4 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-1), R 5 to R 8 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-3), and R 5 to R 8 At least one of them is a substituent represented by the following general formula (G1-3), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms. n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3.

[0035] [Chemical Formula 7]

[0036] In the above general formula, Ar 13 、Ar 15 and Ar 16 Each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 Each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 、Ar 16 and Ar 17 At least two of the n13, n15, and n16 represent a bicyclic or tricyclic monovalent or divalent aromatic hydrocarbon group or a monovalent or divalent aromatic heterocyclic group. n13, n15, and n16 each independently represent an integer from 0 to 3, and n14 and n17 each independently represent an integer from 1 to 3. n15 + n16 + n17 ≥ n13 + n14.

[0037] One embodiment of the present invention is a light-emitting device, wherein the vapor deposition temperature of the organic compound represented by the above-mentioned general formula (G1) is 330° C. or lower.

[0038] One embodiment of the present invention is a light-emitting device including an organic compound represented by Structural Formula (100), Structural Formula (101), Structural Formula (102), Structural Formula (123), or Structural Formula (150).

[0039] [Chemical Formula 8]

[0040] Another embodiment of the present invention is an electronic device including any one of the above-mentioned light-emitting devices, a sensor, an operation button, and a speaker or a microphone.

[0041] Another embodiment of the present invention is a light-emitting device including any of the above-mentioned light-emitting devices and a transistor or a substrate.

[0042] Another embodiment of the present invention is a display device including any of the above-mentioned light-emitting devices and a transistor or a substrate.

[0043] Another embodiment of the present invention is a lighting device including any of the above-mentioned light-emitting devices and a housing.

[0044] Note that the term "light-emitting device" in this specification includes image display devices using light-emitting devices. Furthermore, a light-emitting device may also include a module in which a light-emitting device is attached to a connector such as an anisotropic conductive film or a tape carrier package (TCP); a module in which a printed circuit board is provided at the end of a TCP; or a module in which an integrated circuit (IC) is directly mounted on a light-emitting device using a COG (Chip On Glass) method. Furthermore, a lighting device may also include a light-emitting device.

[0045] In addition, the electronic device in this specification includes a light-emitting device, a light-receiving device (a sensor, a solar cell, etc.), or a device combining a light-emitting device and a light-receiving device.

[0046] Furthermore, the light-emitting device, electronic device, or organic device in this specification also includes layers or structures disposed outside a pair of electrodes, such as partition walls, sealing films, or color filters disposed on the electrodes.

[0047] One embodiment of the present invention can provide a light-emitting device with high light emission efficiency. One embodiment of the present invention can provide any of a light-emitting device, a light-emitting apparatus, an electronic device, a display device, and an electronic device with low power consumption.

[0048] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of the above effects. Note that effects other than those described above can be understood and extracted from the description of the specification, drawings, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figures 1A to 1E is a diagram illustrating a structure of a light emitting device according to an embodiment; Figure 2A and Figure 2B is a top view and a cross-sectional view of the light emitting device; Figures 3A to 3D is a cross-sectional view showing a light emitting device; Figures 4A to 4E is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device; Figures 5A to 5E is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device; Figures 6A to 6C is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device; 7A to 7C is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device; Figures 8A to 8C is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device; Figures 9A to 9C is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device; 10A to 10C is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device; Figures 11A to 11G is a top view showing a structural example of a pixel; 12A to 12I is a top view showing a structural example of a pixel; Figure 13A and Figure 13B is a perspective view showing a structural example of a display module; Figure 14A and Figure 14B is a cross-sectional view showing a structural example of a light emitting device; Figure 15 is a perspective view showing a structural example of a light emitting device; Figure 16A is a cross-sectional view showing a structural example of a light emitting device, Figure 16B and Figure 16C is a cross-sectional view showing a structural example of a transistor; Figure 17 is a cross-sectional view showing a structural example of a light emitting device; 18A to 18D is a cross-sectional view showing a structural example of a light emitting device; 19A to 19D is a diagram showing an example of an electronic device; 20A to 20F is a diagram showing an example of an electronic device; Figures 21A to 21G is a diagram showing an example of an electronic device; Figure 22 It is the 1H NMR spectrum of the organic compound; Figure 23 is a graph illustrating the absorption and emission spectra of toluene solutions of organic compounds; Figure 24 is a graph illustrating the absorption and emission spectra of solid thin films of organic compounds; Figure 25 It is the 1H NMR spectrum of an organic compound; Figure 26 is a graph illustrating the absorption and emission spectra of toluene solutions of organic compounds; Figure 27 is a graph illustrating the absorption and emission spectra of solid thin films of organic compounds; Figure 28It is the 1H NMR spectrum of the organic compound; Figure 29 is a graph illustrating the absorption and emission spectra of toluene solutions of organic compounds; Figure 30 is a graph illustrating the absorption and emission spectra of solid thin films of organic compounds; Figure 31 is a graph illustrating measurement results of various refractive indices and various extinction coefficients of organic compounds; Figure 32 is a graph illustrating measurement results of various refractive indices and various extinction coefficients of organic compounds; Figure 33 is a graph illustrating measurement results of various refractive indices and various extinction coefficients of organic compounds; Figure 34 is a graph illustrating measurement results of various refractive indices and various extinction coefficients of organic compounds; Figure 35 is a graph illustrating measurement results of various refractive indices and various extinction coefficients of organic compounds; Figure 36 is a diagram illustrating the structure of the sample; Figure 37 is a graph showing the luminance-voltage characteristics of the sample; Figure 38 is a graph showing the current density-voltage characteristics of the sample; Figure 39 is a graph showing current efficiency-luminance characteristics of the samples; Figure 40 is a graph showing power efficiency-luminance characteristics of the sample; Figure 41 is a graph showing BI-brightness characteristics of the sample; Figure 42 is a graph showing the electric field emission spectrum of the sample; Figure 43 is a graph showing the time variation of the normalized brightness of the sample; Figure 44 is a graph showing the luminance-voltage characteristics of the sample; Figure 45 is a graph showing the current density-voltage characteristics of the sample; Figure 46 is a graph showing current efficiency-luminance characteristics of the samples; Figure 47 is a graph showing power efficiency-luminance characteristics of the sample; Figure 48 is a graph showing BI-brightness characteristics of the sample; Figure 49 is a graph showing the electric field emission spectrum of the sample; Figure 50 is a graph showing the time variation of the normalized brightness of the sample; Figure 51 is a graph showing the luminance-voltage characteristics of the sample; Figure 52 is a graph showing the current density-voltage characteristics of the sample; Figure 53 is a graph showing current efficiency-luminance characteristics of the samples; Figure 54 is a graph showing power efficiency-luminance characteristics of the sample; Figure 55 is a graph showing BI-brightness characteristics of the sample; Figure 56 is a graph showing the electric field emission spectrum of the sample; Figure 57 It is the 1H NMR spectrum of the organic compound; Figure 58 is a graph illustrating the absorption and emission spectra of toluene solutions of organic compounds; Figure 59 is a graph illustrating the absorption and emission spectra of solid thin films of organic compounds; Figure 60 It is the 1H NMR spectrum of the organic compound; Figure 61 is a graph illustrating the absorption and emission spectra of toluene solutions of organic compounds; Figure 62 These are graphs illustrating the absorption and emission spectra of solid thin films of organic compounds. DETAILED DESCRIPTION

[0050] The following describes the embodiments of the present invention in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily appreciate that the embodiments and details can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the embodiments described below.

[0051] When light is incident on a material with optical anisotropy, light with a vibration plane parallel to the optical axis is called extraordinary light (or extraordinary line), and light with a vibration plane perpendicular to the optical axis is called ordinary light (or ordinary line). However, sometimes the material has different refractive indices for ordinary and extraordinary light. In this case, anisotropy analysis can be performed to calculate the ordinary and extraordinary refractive indices, respectively. Note that in this specification, the ordinary refractive index is used as an indicator when both the ordinary and extraordinary refractive indices exist in the material being measured. When only the refractive index is shown, it means the average of the ordinary and extraordinary refractive indices.

[0052] In addition, similar to the refractive index, the extinction coefficient sometimes has different values ​​for ordinary light and extraordinary light. By performing anisotropy analysis, the ordinary light extinction coefficient and the extraordinary light extinction coefficient can be separated and calculated. In this specification, when the material being measured has both ordinary light extinction coefficient and extraordinary light extinction coefficient, the ordinary light extinction coefficient is used as an indicator. When only the extinction coefficient is shown, it means the average of the ordinary light extinction coefficient and the extraordinary light extinction coefficient.

[0053] In addition, the vapor-deposited film in this specification is a film deposited by the vapor deposition method in a state where the substrate is at room temperature or is not heated.

[0054] Implementation Method 1 In this embodiment, an organic compound which is one embodiment of the present invention is described.

[0055] The organic compound described in this embodiment is specifically a compound having a carbazole ring (also referred to as a carbazole compound). In particular, it is an organic compound having a carbazole ring and a phenanthrene ring. In particular, it is an organic compound having a carbazole ring and two or more and four or less naphthalene rings.

[0056] The organic compound of one embodiment of the present invention has one to three phenanthrene rings or two to four naphthalene rings as substituents on the carbazole ring, thereby achieving a high glass transition temperature and a high refractive index while maintaining a low sublimation temperature (or vapor deposition temperature) and being less susceptible to thermal decomposition during sublimation. Note that from the perspective of sublimation temperature, the number of naphthalene rings is more preferably two to three.

[0057] Furthermore, as organic compounds used in industrial products, a low vapor deposition temperature is effective. In other words, since deposition can be performed at a low temperature, the influence of heat on the organic compound during deposition can be reduced, thereby reducing decomposition caused by heat.

[0058] In particular, mass production processes involve continuous heating of the same material for extended periods, and organic compounds deposited at excessively high temperatures are prone to decomposition. This decomposition can lead to a decrease in the vacuum level of the deposition atmosphere, further increases in the deposition temperature, and a decrease in the luminous efficiency and reliability of manufactured components with absorption in the visible region of the deposited film, making it difficult to achieve a stable mass production system. Therefore, organic compound materials that can be deposited at low temperatures can be deposited without decomposition, enabling stable mass production.

[0059] Specifically, the vapor deposition temperature of the organic compound of one embodiment of the present invention in the vapor deposition device is 350°C or lower, preferably 330°C or lower, more preferably 300°C or lower, and further preferably 270°C or lower. Here, the vapor deposition temperature refers to the temperature at which the pressure of the vapor deposition device is 1.0×10 -6 Pa and less than 1.0×10 -4 At any pressure in Pa, the evaporation rate becomes 1×10 -1 nm / s. Note that the evaporation rate is 1×10 -1 nm / s means that 1×10 -1 The higher the evaporation rate, the faster the deposition can be. When shortening cycle times in mass production processes, production costs must be reduced, so high-speed deposition is preferred.

[0060] In addition, the sublimation temperature of the organic compound of one embodiment of the present invention is 350°C or lower, preferably 300°C or lower, more preferably 290°C or lower, and even more preferably 260°C or lower. In addition, the sublimation temperature can be evaluated by measurement using a thermogravimetric-differential thermal analysis (TG-DTA) apparatus. For example, when the pressure of the TG-DTA measuring apparatus is controlled to 1.0×10 -1 At any pressure of 10 Pa or more and 10 Pa or less, the measured weight of the compound used for measurement is set to 1 mg or more and 20 mg or less, and the temperature at which the weight determined by thermogravimetric measurement becomes -5% of the weight at the start of measurement (referred to as the 5% weight loss temperature) is set as the sublimation temperature.

[0061] Furthermore, in TG-DTA measurements, the temperature at which the weight reaches -50% of the starting weight (referred to as the 50% weight loss temperature) is preferably low. A low 50% weight loss temperature indicates that even if the sublimation weight increases, sublimation can be performed stably at low temperatures. The organic compound of one embodiment of the present invention has a 50% weight loss temperature of 390°C or lower, preferably 350°C or lower, more preferably 320°C or lower, and even more preferably 300°C or lower.

[0062] Note that to lower the vapor deposition temperature, organic compounds with low molecular weight are generally sufficient. However, this results in a low glass transition point (Tg), which can easily reduce the heat resistance of the bulk or film. Heating at temperatures above the Tg can cause changes in film quality and refractive index (ordinary and extraordinary refractive indices), thus requiring a high Tg. The organic compound of one embodiment of the present invention has a high glass transition point and a low vapor deposition temperature.

[0063] Furthermore, the organic compound of one embodiment of the present invention can increase the refractive index of the deposited film. First, since the organic compound has a carbazole skeleton, it can increase the refractive index and the anisotropy of the refractive index compared to organic oxides that do not have this skeleton.

[0064] In addition, the refractive index can be further increased by including a fused ring in the molecule. For example, it is preferred to include a phenanthrene ring or a naphthalene ring. When these rings are bonded to the carbazole ring as substituents, the molecular weight is small and they can sublime at low temperatures, and high heat resistance (glass transition point) and an increase in the refractive index can be obtained, so they are preferred. In addition, as long as there is one phenanthrene ring or naphthalene ring in the molecule, a compound with a high refractive index can be provided, but the refractive index can be further increased when there are two or more phenanthrene rings or naphthalene rings. For example, a binaphthyl structure in which two naphthalene rings are directly connected is preferably used. In addition, when a binaphthyl structure is included as a substituent, the glass transition temperature Tg of the compound can be increased. In addition, when the 2-position of naphthalene is bonded to another group (i.e., it includes 2-naphthyl), the refractive index can be further increased. This is because the density of the organic compound in the deposited film increases. In particular, when a 2,2'-binaphthyl structure in which the 2-positions of naphthalene are bonded to each other is included in a partial structure, the refractive index can be further increased. Note that the present invention is not limited thereto, and for example, when the structure has a structure in which the 1-position of naphthalene is bonded to another group (ie, contains a 1-naphthyl group), Tg can be increased.

[0065] Since the vapor deposition temperature may increase as the number of fused rings increases, the number of naphthalene rings is preferably four or less, more preferably three or less.

[0066] When benzene is included as a substituent, p-phenylene (also known as p-phenylene) is preferred. Compared to compounds containing m-phenylene (or o-phenylene), compounds containing p-phenylene improve molecular orientation during deposition, thereby increasing the ordinary refractive index. However, m-phenylene or o-phenylene may also be used; in this case, the sublimation temperature can be lowered and crystallization of the film can be suppressed.

[0067] As the refractive index value, for example, the ordinary light refractive index no at a wavelength of 450 nm in the blue wavelength region is preferably 1.9 or greater. In addition, the ordinary light extinction coefficient ko at a wavelength of 450 nm is 0.2 or less, preferably 1×10 -2 Below, more preferably 1×10 -4 In addition, at any wavelength of 360 nm or more and 830 nm or less (for example, three wavelengths of 450 nm (blue wavelength region), 520 nm (green wavelength region), and 630 nm (red wavelength region)), preferably at all of the three wavelengths, the ordinary refractive index (n) of the organic compound of one embodiment of the present invention is o ) and the extraordinary refractive index (n e ) (Δn=|n o -n e|) is 0.1 or more and 0.4 or less. Details of the refractive index value will be described in Embodiment 2 and Examples.

[0068] Here, the ordinary refractive index (n o ) and the extraordinary refractive index (n e ) (Δn=|n o -n e |) is used as an indicator of the anisotropy of the refractive index. In the visible light region (360 nm to 830 nm), the larger the Δn, the greater the anisotropy of the refractive index tends to be.

[0069] For example, when an organic compound with high refractive index anisotropy is used in any structure of a light-emitting device, light emitted from the light-emitting layer can be efficiently extracted, that is, the light extraction efficiency can be improved, which is effective.

[0070] In addition, the carbazole compound of one embodiment of the present invention may also have a heterocycle as a substituent. As the heteroatom possessed by the heterocycle, nitrogen, oxygen, sulfur, etc. can be cited. When heteroatoms are included, the ordinary light refractive index no or the glass transition temperature Tg can sometimes be increased. In order to increase the refractive index, the heterocycle preferably contains a heteroaromatic ring skeleton containing a five-membered ring of nitrogen, oxygen, and sulfur, for example, preferably a heterocycle containing a pyrrole skeleton, a furan skeleton, a thiophene skeleton, an azole (for example, imidazole, oxazole, thiazole, oxadiazole, triazole) skeleton, etc. In particular, it is expected that the refractive index of the compound having an atom with a large atomic radius such as sulfur in the molecular structure is improved (for example, structural formula (210), structural formula (226) and structural formula (227) described later). In addition, when the condensed ring contains heteroatoms, it has the effect of increasing Tg by the condensed ring and the effect of increasing the refractive index by the heteroatoms, so it is preferred (for example, structural formula (209), structural formula (210), structural formula (222) to structural formula (229) described later). In other words, it is preferred to include a fused heteroaromatic ring containing a five-membered ring of nitrogen, oxygen, or sulfur, for example, a carbazole ring, a dibenzofuran ring, a benzonaphthofuran ring, a dibenzothiophene ring, a benzonaphthothiophene ring, a benzoxazole ring, or a benzothiazole ring. However, when there is a heteroatom, the solubility of the organic solvent is reduced depending on the type of the heterocycle, which may result in a reduction in the yield of the reaction during synthesis and a reduction in the purity during purification. Additionally, it may be considered that when there is a heterocycle in the molecular structure, intermolecular interactions enhance and increase the sublimation temperature. Therefore, except for the carbazole ring, the total number of the heteroatoms included in the compound is less than 3, preferably less than 2, and more preferably less than 1. Alternatively, except for the carbazole ring, the total number of the heterocycle included in the compound is less than 3, preferably less than 2, and more preferably less than 1.

[0071] <Example 1 of Organic Compound> One embodiment of the present invention is an organic compound represented by General Formula (G1).

[0072] [Chemical Formula 9]

[0073] Note that in the general formula (G1), R 1 to R 4 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-1), R 5 to R 8 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-3), and R 5 to R 8 At least one of them is a substituent represented by the following general formula (G1-3), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms. n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3.

[0074] [Chemical Formula 10]

[0075] Note that in the general formula (G1-1) and the general formula (G1-3), Ar 13 、Ar 15 and Ar 16 Each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms (also referred to as an arylene group) or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms (also referred to as a heteroarylene group), Ar 14 and Ar 17 Each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms (also referred to as an aryl group), Ar 15 、Ar 16 and Ar 17At least two of the groups represent a bicyclic or tricyclic monovalent or divalent aromatic hydrocarbon group or a monovalent or divalent aromatic heterocyclic group (also referred to as a heteroaryl group). n13 represents an integer from 0 to 3, and n14, n15, n16, and n17 each independently represent an integer from 1 to 3. n15+n16+n17>n13+n14.

[0076] Note that when n11 is 2 or more, multiple Ar 11 They may be the same substituent or different substituents. 12 to Ar 17 The same is true for the case where there are multiple. 11 to Ar 17 Preferably, it represents a substituent consisting of carbon and hydrogen (including deuterium). 12 、Ar 14 and Ar 17 It may also be hydrogen (deuterium).

[0077] In the above general formula (G1), R 1 to R 4 In addition to the substituent represented by the general formula (G1-1), or R 5 to R 8 In the case where the substituents other than hydrogen represented by the general formula (G1-3) are replaced, the molecular structure is rigid and the intermolecular interaction is enhanced compared to the case where the substituents other than hydrogen are replaced, thereby increasing the refractive index, which is preferred. In addition, the synthesis cost is also reduced, which is preferred.

[0078] In the above general formula (G1), R 1 and R 2 、R 2 and R 3 、R 3 and R 4 、R 4 and R 5 、R 5 and R 6 、R 6 and R 7 and R 7 and R 8 For example, in the formation of a ring containing R 2 and R 3 In the case of a benzene ring, the benzene ring and the carbazole ring are fused to form a structure containing a benzocarbazole ring. By adopting such a fused structure, heat resistance and glass transition temperature (Tg) can be improved. On the other hand, when the fused structure is not present, the molecular weight becomes smaller and the sublimation temperature can be lowered.

[0079] Here, when the general formula (G1) contains a naphthalene ring or a naphthalene skeleton, the ordinary light refractive index can be increased. Note that in this specification, unless otherwise specified, a compound having a naphthalene ring refers to a compound having a naphthalene ring itself as in the structure (100) shown later, and does not include a compound having naphthalene as part of a ring as in the structure (102) shown later. In addition, a compound having a naphthalene skeleton includes a compound having naphthalene as part of a skeleton as in the structure (102). In addition, not limited to naphthalene, other rings or skeletons can also be interpreted in the same manner.

[0080] In addition, when the 2-position of the naphthalene skeleton is bonded to each other, the ordinary light refractive index can be further increased. Alternatively, when there is no bond at the 1-position of the naphthalene skeleton, the refractive index can be increased. In addition, when a fused ring with three or fewer rings is used, the sublimation temperature can be lowered. Note that a two-ring fused ring refers to a ring number of 2 such as naphthalene, quinoxaline, or benzoxazole, and a three-ring fused ring refers to a ring number of 3 such as phenanthrene, anthracene, or carbazole. The same applies to rings with four or more rings.

[0081] For example, Ar 15 、Ar 16 and Ar 17 At least two of them are preferably substituents comprising a substituted or unsubstituted naphthalene ring. In particular, Ar 16 and Ar 17 Preferably, it is a substituent containing a naphthalene ring. 16 and Ar 17 In the case of naphthalene, it is preferred that each naphthalene is bonded to each other at the 2-position. 16 and Ar 17 In the case of naphthalene, it is preferred that the naphthalenes are bonded to each other at the 2-position and have 2,2'-binaphthyl (for example, the following structural formula (100)) in a partial structure.

[0082] In addition, naphthalene is preferably bonded to another group at least at the 2-position. 15 In the case of naphthalene, it is preferred that at least the 2-position and 6-position be connected to the carbazolyl group and Ar 16 In addition, in Ar 16 In the case of naphthalene, it is preferred that at least the 2-position and the 6-position are connected with Ar 15 and Ar 17 In addition, in Ar 17 In the case of naphthalene, it is preferred to have Ar 16 bonding.

[0083] Especially, when Ar 16 and Ar 17 Bonded to Ar 15 and Ar 16When the refractive index of ordinary light is 6, a material with a high refractive index can be provided. By using this material in a device, a high-efficiency device can be realized, thereby realizing a low-power device. In addition, a high-heat-resistant material can be provided. By using this material in a device, a device with high efficiency and high heat resistance can be provided.

[0084] In addition, in Example 1 of the above-mentioned organic compound, n15+n16+n17>n13+n14. In this way, when the number of substituents of one of the two benzene rings bonded to the carbazole ring is greater than the number of substituents bonded to the other benzene ring, the anisotropy of the refractive index tends to increase, so it is preferred. In addition, in Example 1 of the above-mentioned organic compound, when the number of arylene groups or heteroarylene groups contained in the substituents of one of the two benzene rings bonded to the carbazole ring (Ar in Example 1 of the above-mentioned organic compound) is connected, 15 to Ar 17 The number of arylene groups or heteroarylene groups contained in the substituent bonded to another benzene ring is greater than the number of arylene groups or heteroarylene groups connected (Ar in Example 1 of the above organic compound) 13 and Ar 14 When n15+n16+n17>n11+n12, the anisotropy of the refractive index tends to increase, which is preferred. Furthermore, it is speculated that the reduced intermolecular interaction can lower the sublimation temperature, which is preferred. Furthermore, in Example 1 above, when n15+n16+n17>n11+n12, the anisotropy of the refractive index tends to increase, which is preferred. Furthermore, when n has the above relationship, Tg can be increased.

[0085] <Example 2 of Organic Compound> One embodiment of the present invention is an organic compound represented by General Formula (G1).

[0086] [Chemical Formula 11]

[0087] Note that in the general formula (G1), R 1 to R 4 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-1), R 5 to R 8 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-2), and R5 to R 8 At least one of them is a substituent represented by the following general formula (G1-2), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms, or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 14 to 30 carbon atoms, or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms. n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3.

[0088] [Chemical Formula 12]

[0089] Note that in the general formula (G1-1) and the general formula (G1-2), Ar 13 and Ar 15 Each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 Each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 and Ar 17 At least one of them is phenanthrene, in Ar 17 In the case of phenanthrene, it is bonded to another group at the 2-position or 3-position of the phenanthrene. n13 represents an integer from 0 to 3, and n14, n15, and n17 each independently represent an integer from 1 to 3. n15+n17>n13+n14.

[0090] In addition, Ar 12 and Ar 17 They may all be fused rings having 2 or more rings, preferably 3 or more rings.

[0091] In addition, Ar 15 and Ar 17 At least one of the condensed rings is preferably a condensed ring with 2 or more rings, more preferably a condensed ring with 3 or more rings, and even more preferably a condensed ring with 4 or more rings. Examples of condensed rings with 4 or more rings include triphenylene rings. When a triphenylene ring is used, the refractive index and Tg can be increased, so it is preferred. In the case of lowering the sublimation temperature, the number of rings is preferably small, and n15 can also be 0.

[0092] In the general formula (G1-1) and the general formula (G1-2), Ar 11 and Ar 12 At least one of them represents a condensed ring, Ar 15and Ar 17 At least one of n11, n12, n15, and n17 represents a fused ring. Each of n11, n12, n15, and n17 independently represents an integer of 1 to 3.

[0093] Note that when n15 is 2 or more, multiple Ar 15 They may be the same substituent or different substituents. 17 The same is true for the case where there are multiple. 15 and Ar 17 Preferably, it represents a substituent consisting of carbon and hydrogen (including deuterium). 12 、Ar 14 and Ar 17 It may also be hydrogen (deuterium).

[0094] Here, in the general formula (G1-2), Ar 15 or Ar 17 The phenanthrene is bonded to other groups at the 2-position or 3-position, thereby increasing the ordinary light refractive index. 17 In the case of phenanthrene, the ordinary light refractive index can be further increased by bonding to other groups at the 2-position or 3-position of the phenanthrene (for example, the following structural formula (103)).

[0095] In addition, in Example 2 of the above-mentioned organic compound, n15+n17>n13+n14. In this way, when the number of substituents of one of the two benzene rings bonded to the carbazole ring is greater than the number of substituents bonded to the other benzene ring, the anisotropy of the refractive index tends to increase, so it is preferred. In addition, in Example 2 of the above-mentioned organic compound, when the number of arylene groups or heteroarylene groups contained in the substituents of one of the two benzene rings bonded to the carbazole ring (Ar in Example 2 of the above-mentioned organic compound) is connected, 15 and Ar 17 The number of arylene groups or heteroarylene groups contained in the substituent bonded to another benzene ring is greater than the number of arylene groups or heteroarylene groups connected (Ar in Example 2 of the above organic compound) 13 and Ar 14 When n15+n17>n11+n12, the anisotropy of the refractive index tends to increase, which is preferred. Furthermore, it can be inferred that the intermolecular interactions are reduced, which can lower the sublimation temperature, which is preferred. Furthermore, in Example 2 above, when n15+n17>n11+n12, the anisotropy of the refractive index tends to increase, which is preferred. Furthermore, when n has the above relationship, Tg can be increased.

[0096] <Substituents of Examples of Each Organic Compound> Note that R described in the general formula (G1), general formula (G1-1), general formula (G1-2), and general formula (G1-3) described in <Example 1 of an organic compound> and <Example 2 of an organic compound> 1 to R 8 、Ar 11 to Ar 15 and Ar 17 Reference can be made to the examples of organic compounds 1 and 2 described above. m (m is an arbitrary number) or Ar m (m is an arbitrary number) represents a substituent.

[0097] In the general formula (G1), R 1 to R 8 In the case of an alkyl group having 1 to 6 carbon atoms, for example, methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, hexyl, isohexyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, etc. can be used. Note that when the alkyl group having 1 to 6 carbon atoms has a substituent, examples of the substituent include a cycloalkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 13 carbon atoms.

[0098] In the general formula (G1), R 1 to R 8 In the case of a cycloalkyl group having 3 to 6 carbon atoms, for example, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, 1-methylcyclohexyl, cycloheptyl, adamantyl, bicyclo[2,2,2]octyl, norbornyl, etc. can be used. Note that when the cycloalkyl group having 3 to 6 carbon atoms has a substituent, the substituent may be a cycloalkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 13 carbon atoms.

[0099] In any of the general formulas (G1), (G1-1) to (G1-3), R 1 to R 8 、Ar 11 to Ar 17 In the case of an aromatic hydrocarbon group having 6 to 30 carbon atoms or an aromatic heterocyclic group having 3 to 30 carbon atoms, a group having a structure in which a hydrogen atom at a bonding position is removed from an aromatic hydrocarbon group or aromatic heterocyclic ring represented by any of the following structural formulas (Ar-1) to (Ar-33) can be used.

[0100] For example, a naphthyl group is a monovalent substituent obtained by removing one hydrogen atom from naphthalene (represented by the following structural formula (Ar-17)). In addition, a naphthyl group is a divalent substituent obtained by removing two hydrogen atoms from naphthalene. The same applies to other structural formulas (Ar-1) to (Ar-33). Therefore, for example, in the above general formula (G1-3), in Ar 15 is pyridine (represented by the following structural formula (Ar-5)), Ar 16 is naphthalene and Ar 17 In the case of naphthalene, it is strictly expressed as "Ar 15 is pyridyl, Ar 16 is a naphthalenyl group and Ar 17 is a naphthyl group", but can also be simply expressed as "Ar 15 Pyridine, Ar 16 and Ar 17 is naphthalene". In addition, structural formula (100) and structural formula (101) can also be expressed as "a compound containing multiple naphthalene rings" or "a compound containing multiple naphthalenes". In addition, the valence of monovalent or divalent groups is sometimes omitted.

[0101] [Chemical Formula 13]

[0102] In addition, when the aromatic hydrocarbon group or the aromatic heterocyclic group has a substituent, as the substituent, a cyano group, a halogen group, an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, an aryl group having 6 to 13 carbon atoms, or a heteroaryl group having 3 to 10 carbon atoms can be cited. By having a cyano group or a halogen group, the effect of lowering the driving voltage of the device can be expected. In addition, since the effect of lowering the sublimation temperature can be expected by having an alkyl group or a cycloalkyl group, it can be used for various layers such as a cap layer. In addition, in the case of having an alkyl group or a cycloalkyl group, the ordinary light refractive index is sometimes reduced, so it is particularly preferably used for a layer that requires a lower ordinary light refractive index, such as a transport layer (hole transport layer or electron transport layer). In addition, in the case of R 1 to R 8 The same effect can be expected when a cyano group, a halide group, an alkyl group or a cycloalkyl group is used.

[0103] <Specific example> Next, specific examples of the organic compound according to one embodiment of the present invention having a structure represented by the above-mentioned general formula (G1) are shown below.

[0104] [Chemical Formula 14]

[0105] [Chemical Formula 15]

[0106] [Chemical Formula 16]

[0107] [Chemical Formula 17]

[0108] [Chemical Formula 18]

[0109] [Chemical Formula 19]

[0110] [Chemical Formula 20]

[0111] [Chemical Formula 21] [Chemical Formula 22]

[0113] [Chemical Formula 23]

[0114] [Chemical Formula 24]

[0115] [Chemical Formula 25]

[0116] [Chemical Formula 26]

[0117] The organic compounds represented by the above-mentioned general formula (G1), general formula (G1-1), general formula (G1-2), general formula (G1-3), structural formula (100) to structural formula (239) are only examples, and the organic compounds of one embodiment of the present invention are not limited to these.

[0118] <Methods for Synthesizing Organic Compounds> The synthesis method of the organic compound represented by the general formula (G1) described in the above <Example 1 of Organic Compound> is described. In the following general formulas (G1), (G1-1), (G1-2) and (G1-3), R 1 to R 8 、Ar 11 to Ar17 , n11 to n17 can appropriately adopt the above-mentioned structure.

[0119] [Chemical Formula 27]

[0120] Here, the general formula (G1) can be represented by the general formula (G1a) or the general formula (G1b) shown below. The general formula (G1a) shows the following structure: R in the general formula (G1) 1 to R 4 Any one of them is bonded to the general formula (G1-1), and the other one is R 11 to R 13 Replacement, R 5 to R 8 Any one of them is bonded to the general formula (G1-2), and the other one is R 14 to R 16 In addition, the general formula (G1b) also shows the following structure: the general formula (G1-1) and the general formula (G1-3) are bonded to the general formula (G1) and R 11 to R 16 is replaced. Note that R 11 to R 16 The above R can be appropriately adopted 1 to R 8 Note that although the general formula (G1-1) is shown to be bonded to R 1 to R 4 Any example of R 1 to R 4 Alternatively, all of them may be hydrogen (including deuterium).

[0121] [Chemical Formula 28]

[0122] <<Method for Synthesizing Organic Compounds Represented by General Formula (G1a)>> Various reactions can be applied to the synthesis of the organic compound represented by the above-mentioned general formula (G1a). For example, the organic compound represented by the general formula (G1a) can be synthesized by a simple method shown in the following synthesis scheme.

[0123] As shown in the following scheme (Sa-1), a carbazole compound represented by the general formula (G1a) is obtained by coupling compound 1, a compound containing a carbazole skeleton (also referred to as a carbazole compound), with compound 2. 1 It is bonded to a carbon atom in the benzene ring and represents boric acid, boric acid ester, or cyclic triol borate (also referred to as boric acid, etc.). Note that as the cyclic triol borate, potassium salt or sodium salt can also be used in addition to lithium salt. In compound 2, X 1represents a halogen. As the coupling reaction, for example, the Suzuki-Miyaura reaction using a palladium catalyst can be used.

[0124] Note that B of compound 1 1 Can also be X 1 , at this time X of compound 2 1 Can also be B 1 Alternatively, you can also 14 to R 16 The two positions in include boronic acid etc. In this case, compound 2 may be bonded to the two positions.

[0125] [Chemical Formula 29]

[0126] <<Method for Synthesizing Organic Compounds Represented by General Formula (G1b)>> An example of a method for synthesizing the organic compound represented by the above-mentioned general formula (G1b) is shown.

[0127] First, as shown in the following scheme (Sb-1), compound 3 is coupled with compound 4 to obtain compound 5. In compound 3, B 2 In compounds 4 and 5, X 2 、X 3 Indicates halogen. Note that X 2 and X 3 Can be the same or different halogens. 2 is iodine, X 3 is bromine), the coupling reaction proceeds selectively according to one of the halogens, which is preferred.

[0128] [Chemical formula 30]

[0129] The obtained compound 5 can be used instead of the compound 2 of the above scheme (Sa-1). In this case, the organic compound represented by the general formula (G1b) can be obtained by the coupling reaction of the compound 1 and the compound 5.

[0130] <<Other Synthesis Methods of Organic Compounds Represented by General Formula (G1a) or (G1b)>> Examples of methods for synthesizing organic compounds represented by General Formula (G1a) or (G1b) different from those described above are shown below.

[0131] The organic compound represented by the general formula (G1a) can be synthesized using the following synthesis scheme (Sa-2) and synthesis scheme (Sa-3).

[0132] Compound 6 is a 9H-carbazole compound in which nitrogen is bonded to hydrogen. As shown in Synthesis Scheme (Sa-2), Compound 6 is coupled with Compound 2 to give Compound 7.

[0133] [Chemical Formula 31]

[0134] Next, as shown in Synthesis Scheme (Sa-3), an organic compound represented by General Formula (G1a) can be obtained by coupling Compound 7 with Compound 8. As the coupling reaction, for example, a Buchwald-Hartwig reaction using a palladium catalyst can be used.

[0135] [Chemical Formula 32]

[0136] Note that, although the example using Compound 7 as an intermediate is shown above, a device can also be manufactured using Compound 7 without using Compound 7 as an intermediate. In Compounds 6 and 7, hydrogen includes deuterium.

[0137] In addition, in Synthesis Scheme (Sa-2), by using Compound 5 instead of Compound 2, an organic compound represented by General Formula (G1b) can be obtained.

[0138] Furthermore, the compound 2 and the compound 8 may be the same compound. By using the same compound, the synthesis scheme (Sa-2) and the synthesis scheme (Sa-3) can sometimes be carried out simultaneously, thereby reducing the number of steps, which is preferred.

[0139] The structure described in this embodiment can be used in combination with the structures described in other embodiment modes as appropriate.

[0140] Implementation Method 2 In this embodiment, referring to Figures 1A to 1E The structure of a light-emitting device using the organic compound described in Embodiment 1 will be described.

[0141] <Basic Structure of Light-Emitting Device> The basic structure of a light-emitting device will be described. Figure 1A A light-emitting device having a structure (single structure) including an organic compound layer having a light-emitting layer between a pair of electrodes is shown. Specifically, Figure 1A The light emitting device shown includes a first electrode 101 , a second electrode 102 , an organic compound layer 103 , and a capping layer 107 .

[0142] Specifically, an organic compound layer 103 is provided on a first electrode 101, a second electrode 102 is provided on the organic compound layer 103, and a cap layer 107 is provided on the second electrode 102. Here, the second electrode 102 is a light-transmitting electrode, and the light-emitting device has a structure in which light is emitted from the second electrode 102 side.

[0143] also, Figure 1B It is shown that a plurality of ( Figure 1B A light-emitting device having a stacked-layer structure (tandem structure) including organic compound layers 103 (organic compound layer 103a and organic compound layer 103b) containing a light-emitting substance and a charge generation layer 106 between the organic compound layers 103. A light-emitting device having a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0144] The charge generation layer 106 has the function of injecting electrons into one organic compound layer (the organic compound layer 103a or the organic compound layer 103b) and injecting holes into the other organic compound layer (the organic compound layer 103b or the organic compound layer 103a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Figure 1B In this embodiment, when a voltage is applied so that the potential of the first electrode 101 is higher than that of the second electrode 102 , electrons are injected from the charge generation layer 106 into the organic compound layer 103 a and holes are injected into the organic compound layer 103 b .

[0145] Furthermore, from the perspective of light extraction efficiency, the charge generation layer 106 preferably has a light transmittance to visible light (specifically, the charge generation layer 106 has a visible light transmittance of 40% or greater). Furthermore, the charge generation layer 106 can function as a charge generation layer even if its electrical conductivity is lower than that of the first electrode 101 and the second electrode 102.

[0146] also, Figure 1CThe figure shows the stacked structure of the organic compound layer 103 of the light-emitting device of one embodiment of the present invention. Note that in this case, the first electrode 101 is used as an anode and the second electrode 102 is used as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114 and an electron injection layer 115 are stacked in this order on the first electrode 101. Note that the light-emitting layer 113 can also be stacked with a plurality of light-emitting layers of different emission colors. For example, a light-emitting layer containing a light-emitting substance that emits red, a light-emitting layer containing a light-emitting substance that emits green, and a light-emitting layer containing a light-emitting substance that emits blue can be stacked with or without a layer containing a carrier transport material. Alternatively, a light-emitting layer containing a light-emitting substance that emits yellow and a light-emitting layer containing a light-emitting substance that emits blue can be combined. Note that the stacked structure of the light-emitting layer 113 is not limited to the above structure. For example, the light-emitting layer 113 can also be stacked with a plurality of light-emitting layers of the same emission color. For example, a first light-emitting layer containing a blue light-emitting substance and a second light-emitting layer containing a blue light-emitting substance may be stacked with or without a layer containing a carrier transporting material. When multiple light-emitting layers of the same light-emitting color are stacked, reliability may be improved compared to a single layer. In addition, in the case of Figure 1B When multiple EL layers are included, as in the tandem structure shown, the EL layers are stacked sequentially from the anode side as described above. Furthermore, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the organic compound layer 103 is reversed. Specifically, 111 on the cathode first electrode 101 is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0147] The light-emitting layer 113 in the organic compound layer (organic compound layer 103, organic compound layer 103a, organic compound layer 103b) can obtain fluorescent light or phosphorescent light of a desired light color by appropriately combining a light-emitting substance and a plurality of substances. In addition, the light-emitting layer 113 can also have a stacked structure with different light-emitting colors. In this case, different materials can be used as the light-emitting substance and other substances used in each stacked light-emitting layer. In addition, it is also possible to use Figure 1B The plurality of organic compound layers (the organic compound layer 103a and the organic compound layer 103b) shown in the figure have a structure in which different luminescent colors are obtained. In this case, different materials may be used as the luminescent substance and other substances used in the respective luminescent layers.

[0148] Furthermore, in the light-emitting device of one embodiment of the present invention, for example, by using Figure 1CIn the example, the first electrode 101 is a reflective electrode, the second electrode 102 is a semi-transmissive / semi-reflective electrode, and an optical microcavity resonator (microcavity) structure is employed. This allows the light emitted from the light-emitting layer 113 in the organic compound layer 103 to resonate between the two electrodes, thereby enhancing the light emitted from the second electrode 102. This facilitates high definition. Furthermore, since the intensity of light emitted in the front direction at a specific wavelength can be enhanced, power consumption can be reduced.

[0149] If the first electrode 101 of the light-emitting device is a reflective electrode composed of a laminated structure of a reflective conductive material and a translucent conductive material (a transparent conductive film), optical adjustment can be achieved by adjusting the thickness of the transparent conductive film. Specifically, it is preferably adjusted so that, when the wavelength of light emitted from the light-emitting layer 113 is λ, the optical distance (the product of thickness and refractive index) between the first electrode 101 and the second electrode 102 is mλ / 2 (note: m is an integer greater than 1) or a value approximately therefrom.

[0150] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region in the light-emitting layer 113 where the desired light can be obtained (the light-emitting region), and the optical distance from the second electrode 102 to the region in the light-emitting layer 113 where the desired light can be obtained (the light-emitting region), both to (2m'+1)λ / 4 (note that m' is an integer greater than or equal to 1) or a value in the vicinity thereof. Note that the "light-emitting region" described herein refers to the region in the light-emitting layer 113 where holes and electrons recombine.

[0151] By performing the above-described optical adjustment, the spectrum of specific monochromatic light that can be obtained from the light-emitting layer 113 can be narrowed, thereby obtaining light emission with high color purity.

[0152] Furthermore, in the above case, strictly speaking, the optical distance between the first electrode 101 and the second electrode 102 can be said to be the total thickness from the reflective region in the first electrode 101 to the reflective region in the second electrode 102. However, because it is difficult to accurately determine the positions of the reflective regions in the first electrode 101 and the second electrode 102, the above effect can be fully achieved by assuming that any position in the first electrode 101 and the second electrode 102 is a reflective region. Furthermore, strictly speaking, the optical distance between the first electrode 101 and the light-emitting layer that can obtain the desired light can be said to be the optical distance between the reflective region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light. However, because it is difficult to accurately determine the reflective region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light, the above effect can be fully achieved by assuming that any position in the first electrode 101 is a reflective region and any position in the light-emitting layer that can obtain the desired light is a light-emitting region.

[0153] Figure 1D The light-emitting device shown has a tandem structure. This tandem structure enables a light-emitting device capable of high-brightness emission. Furthermore, compared to a single structure, the tandem structure reduces the current required to achieve the same brightness, thereby improving reliability and reducing power consumption.

[0154] Figure 1E The light emitting device shown is Figure 1B As shown in the accompanying drawings, an example of a tandem light-emitting device has a stacked structure in which three organic compound layers (organic compound layer 103a, organic compound layer 103b, organic compound layer 103c) sandwich charge generation layers (charge generation layers 106a, charge generation layers 106b). The three organic compound layers (organic compound layer 103a, organic compound layer 103b, organic compound layer 103c) each include a light-emitting layer (light-emitting layer 113a, light-emitting layer 113b, light-emitting layer 113c), and the emission colors of each light-emitting layer can be freely combined. For example, a structure can be employed in which light-emitting layer 113a emits blue, light-emitting layer 113b emits any one of red, green, and yellow, and light-emitting layer 113c emits blue. Alternatively, a structure can be employed in which light-emitting layer 113a emits red, light-emitting layer 113b emits any one of blue, green, and yellow, and light-emitting layer 113c emits red.

[0155] Furthermore, in the light-emitting device of one embodiment of the present invention, the second electrode 102 is a light-transmitting electrode (a transparent electrode, a semi-transmitting / semi-reflecting electrode, etc.). When the light-transmitting electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. Furthermore, when the electrode is a semi-transmitting / semi-reflecting electrode, the visible light reflectance of the semi-transmitting / semi-reflecting electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less.

[0156] In the light-emitting device according to one embodiment of the present invention, when the first electrode 101 is a reflective electrode (reflective electrode), the reflective electrode has a visible light reflectivity of 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of the electrode is preferably 1×10 -2 Ωcm or less.

[0157] <Specific Structure of Light-Emitting Device> Next, the specific structure of the light emitting device of one embodiment of the present invention is described. Figure 1D Note: Figure 1A and Figure 1C The light emitting device having a single structure shown also adopts the same structure of organic compound layers. Figure 1D In the case of the light-emitting device shown having a microcavity structure, a reflective electrode is formed as the first electrode 101, and a semi-transmissive / semi-reflective electrode is formed as the second electrode 102. Thus, any desired electrode material can be used alone, or multiple electrode materials can be used to form these electrodes in a single layer or a stacked layer. Furthermore, the second electrode 102 is formed by appropriately selecting a material after forming the organic compound layer 103b.

[0158] <Materials for Light-Emitting Devices> Each structure of the light emitting device is described below.

[0159] <<Cap layer>> When depositing the organic compound for the cap layer 107, the ordinary refractive index (n o ) is 1.90 or more, preferably 2.00 or more. In addition, the ordinary light refractive index (n o ) is 1.80 or more, preferably 1.9 or more. In addition, the ordinary light refractive index (n o ) is 1.75 or more, preferably 1.85 or more. o), total reflection of light from the organic compound layer 103 at the cap layer 107 can be suppressed, thereby improving light extraction efficiency.

[0160] In addition, the extraordinary refractive index (n e ) is 1.80 or less, preferably 1.70 or less. In addition, the extraordinary refractive index (n) at a wavelength of 520 nm is e ) is 1.70 or less, preferably 1.60 or less. In addition, the extraordinary refractive index (n e ) is 1.70 or less, preferably 1.60 or less. e ) tends to increase the anisotropy of the refractive index.

[0161] In addition, at any wavelength between 360 nm and 830 nm (for example, three wavelengths of 450 nm, 520 nm, or 630 nm), preferably at all of the three wavelengths, the ordinary refractive index (n o ) and the extraordinary refractive index (n e ) (Δn=|n o -n e |) is 0.1 or more and 0.4 or less, and in this case, the anisotropy of the refractive index can be further increased. o -n e | It is preferably 0.2 or more and 0.4 or less, and more preferably 0.3 or more and 0.4 or less.

[0162] Here, the ordinary refractive index (n o ) and the extraordinary refractive index (n e ) (Δn=|n o -n e |) is used as an indicator of the anisotropy of the refractive index. In the visible light region (above 360nm and below 830nm), the larger the Δn, the greater the anisotropy of the refractive index. In order to increase Δn, the ordinary light refractive index (n) can be increased. o ) or reduce the above-mentioned extraordinary light refractive index (n e ).

[0163] By increasing the anisotropy of the refractive index of the cap layer 107 , light emission from the organic compound layer 103 can be extracted efficiently.

[0164] In addition, the ordinary light extinction coefficient (k o Specifically, in the visible region (450 nm to 630 nm), the ordinary light extinction coefficient is 0.2 or less, preferably 1×10 -2 Below, more preferably 1×10 -4When the ordinary light extinction coefficient is small, light emitted from the organic compound layer 103 can be extracted to the outside without being absorbed, thereby providing a high-efficiency element.

[0165] Note that, when considering extraction efficiency, the ordinary light extinction coefficient in the visible region described above is preferably below the detection limit of the measuring device. On the other hand, when there is slight absorption below 400 nm (the ordinary light extinction coefficient is not 0), it is possible that ultraviolet light (light with a wavelength shorter than visible light) from outside the light-emitting device is absorbed by the cap layer, thereby reducing ultraviolet damage to the underlying structure of the cap layer. Thus, when considering ultraviolet absorption, the ordinary light extinction coefficient at wavelengths below 400 nm is preferably above the detection limit. For example, the ordinary light extinction coefficient at 365 nm is greater than 0.1, preferably greater than 0.2.

[0166] An example of an organic compound that can be used for the cap layer 107 is shown below.

[0167] As the organic compound that can be used, compounds with heterocycles can be enumerated. As the heteroatoms possessed by the heterocycles, nitrogen, oxygen, sulfur etc. can be enumerated. When heteroatoms are included, ordinary light refractive index n0 or glass transition temperature Tg can sometimes be improved. In order to improve the refractive index, the heterocycle preferably includes a heteroaromatic ring skeleton containing a five-membered ring of nitrogen, oxygen, and sulfur, for example, preferably a heterocycle including a pyrrole skeleton, a furan skeleton, a thiophene skeleton, an azole (such as imidazole, oxazole, thiazole, oxadiazole, triazole) skeleton etc. In particular, it is expected that the refractive index of the compound having an atom with a large atomic radius such as sulfur in the molecular structure is improved. In addition, when condensed rings include heteroatoms, there is simultaneously the effect of improving Tg by the condensed rings and the effect of improving the refractive index by the heteroatoms, so it is preferred. Specifically, the heterocyclic ring is preferably a fused heteroaromatic ring containing a five-membered ring containing nitrogen, oxygen, and sulfur, and examples thereof include a carbazole ring, a dibenzofuran ring, a benzonaphthofuran ring, a dibenzothiophene ring, a benzonaphthothiophene ring, a benzoxazole ring, and a benzothiazole ring. As described above, in one embodiment of the present invention, an organic compound having the above-mentioned heterocyclic ring and a phenanthrene ring is suitable for use in the cap layer 107. In particular, an organic compound having the above-mentioned heterocyclic ring and two or more and four or less naphthalene rings is suitable for use in the cap layer 107.

[0168] In addition, as an organic compound that can be used, there is a compound having a carbazole ring (also referred to as a carbazole compound). In particular, an organic compound having a carbazole ring and a phenanthrene ring. In particular, an organic compound having a carbazole ring and two or more and four or less naphthalene rings.

[0169] Furthermore, the carbazole compound can increase the refractive index of the deposited film. First, since the organic compound has a carbazole skeleton, it can increase the refractive index and anisotropy compared to organic oxides that do not have this skeleton.

[0170] In addition, the organic compound suitable for the cap layer 107 can further increase the refractive index by including a condensed ring in the molecule. For example, it is preferred to include a phenanthrene ring or a naphthalene ring. These rings are preferably bonded to the carbazole ring as substituents. In addition, it is sufficient to have one of the above-mentioned phenanthrene rings or naphthalene rings in the molecule, but the refractive index can be further increased when there are two or more phenanthrene rings or naphthalene rings. For example, it is preferred to use a binaphthyl structure in which two naphthalene rings are directly connected. In addition, when a binaphthyl structure is included as a substituent, the glass transition temperature Tg of the compound can be increased. In addition, when there is a structure in which the 2-position of naphthalene is bonded to other groups (i.e., it includes 2-naphthyl), the refractive index can be further increased. This is because the density of the organic compound in the deposited film becomes larger. In particular, when there is a 2,2'-binaphthyl structure in which the 2-positions of naphthalene are bonded to each other in a partial structure, the refractive index can be further increased. Note that this is not limited to this, for example, when there is a structure in which the 1-position of naphthalene is bonded to other groups (i.e., it includes 1-naphthyl), Tg can be increased.

[0171] Since the vapor deposition temperature may increase as the number of fused rings increases, the number of naphthalene rings in the molecule is preferably four or less, more preferably three or less. From the viewpoint of increasing the refractive index, the number of naphthalene rings is preferably two or more.

[0172] When benzene is included as a substituent, p-phenylene (also known as p-phenylene) is preferred. Compared to compounds containing m-phenylene (or o-phenylene), compounds containing p-phenylene exhibit improved molecular orientation during deposition, leading to a higher ordinary refractive index. However, m-phenylene or o-phenylene may also be used; in this case, a lowering effect on the sublimation temperature is expected.

[0173] Note that an organic compound preferably has one or more and three or less phenanthrene rings or two or more and four or less naphthalene rings as substituents on the carbazole ring, thereby achieving a high refractive index and keeping the sublimation temperature (or vapor deposition temperature) low, thereby preventing thermal decomposition during sublimation. Note that from the perspective of sublimation temperature, the number of naphthalene rings in the organic compound should be two or more and four or less, preferably two or more and three or less.

[0174] Furthermore, low vapor deposition temperatures are effective for organic compounds used in industrial products. In other words, since film formation can be performed at low temperatures, the effects of heat on the organic compound during film formation can be reduced, thereby reducing thermal decomposition.

[0175] In particular, during mass production, the same material is heated continuously for extended periods of time, and organic compounds deposited at excessively high temperatures are prone to decomposition. This decomposition can lead to further increases in the deposition temperature, hindering the realization of a stable mass production system. Therefore, organic compound materials that can be deposited at low temperatures can be deposited without decomposition, enabling stable mass production.

[0176] Specifically, the vapor deposition temperature of the organic compound in the vapor deposition device is 350°C or less, preferably 330°C or less, more preferably 300°C or less, and even more preferably 270°C or less. The sublimation temperature of the organic compound is 350°C or less, preferably 300°C or less, more preferably 290°C or less, and even more preferably 260°C or less. In addition, in the measurement of the TG-DTA device, the 50% weight loss temperature is also preferably low. A low 50% weight loss temperature means that even if the sublimation weight increases, sublimation can be stably carried out at a low temperature. The 50% weight loss temperature is 390°C or less, preferably 350°C or less, more preferably 320°C or less, and even more preferably 300°C or less.

[0177] The organic compound preferably has only one carbazole ring. When the number of carbazole rings in the organic compound increases, the sublimation temperature becomes higher, and thus the vapor deposition temperature also becomes higher, which may lead to a decrease in the yield in the production process.

[0178] In addition, as the organic compound used for the cap layer 107, an organic compound represented by the following general formula (G1) is preferably used.

[0179] [Chemical Formula 33]

[0180] Note that in the general formula (G1), R 1 to R 4 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-1), R 5 to R 8 Each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (G1-3), and R 5 to R 8 At least one of them is a substituent represented by the following general formula (G1-3), Ar 11represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms. n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3.

[0181] [Chemical Formula 34]

[0182] Note that in the general formula (G1-1) and the general formula (G1-3), Ar 13 、Ar 15 and Ar 16 Each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 Each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 、Ar 16 and Ar 17 At least two of the n13, n15, and n16 represent a bicyclic or tricyclic monovalent or divalent aromatic hydrocarbon group or a monovalent or divalent aromatic heterocyclic group. n13, n15, and n16 each independently represent an integer from 0 to 3, and n14 and n17 each independently represent an integer from 1 to 3. n15 + n16 + n17 ≥ n13 + n14.

[0183] Note that in the general formula (G1), the general formula (G1-1) and the general formula (G1-3), Ar 11 、Ar 13 、Ar 15 and Ar 16 Arylene 12 、Ar 14 and Ar 17 When n11 is 2 or more, multiple Ar 11 They may be the same substituent or different substituents. 12 to Ar 17 The same is true for the case where there are multiple. 11 to Ar 17 Preferably, it represents a substituent consisting of carbon and hydrogen (including deuterium). 12 、Ar 14 or Ar 17 It may also be hydrogen (including deuterium).

[0184] Here, in the above general formula (G1), R 1 to R 8 and Ar 11 to Ar 17 Refer to the embodiment 1 described by R m (m is an arbitrary integer) or Ar m (m is an arbitrary integer) represents a substituent. Similarly, in embodiment 1, the R m and Ar m .

[0185] Specific examples of the organic compound represented by the general formula (G1) are shown below. Note that the organic compound represented by the general formula (G1) includes the organic compounds described in Embodiment 1.

[0186] [Chemical Formula 35]

[0187] In particular, as the cap layer 107, it is preferred to use the organic compound shown in Embodiment 1 or the above-mentioned organic compound. The sublimation temperature of the organic compound shown in Embodiment 1 is low, so it can be deposited at a low evaporation temperature. That is, in the mass production process, the same material is continuously heated for a long time, and the material of the organic compound with an excessively high evaporation temperature is prone to decomposition. Material decomposition will lead to further high temperatures in the evaporation temperature, and a stable mass production system cannot be achieved. Therefore, the cap layer material that can be deposited at a low temperature can be deposited in a non-decomposition manner, and stable mass production can be achieved. In addition, the refractive index of the above-mentioned organic compound in the visible region or the ordinary light refractive index is high, which can improve the light extraction efficiency and the external quantum efficiency. In addition, the extinction coefficient of the above-mentioned organic compound in the visible region or the ordinary light extinction coefficient is low, which can improve the light extraction efficiency and the external quantum efficiency.

[0188] In addition, the influence of heat during vapor deposition on the structure on the vapor-deposited side can be suppressed. In particular, the thermal history (heat accumulation: thermal budget) in the formation of the cover layer used to manufacture the device will affect the deterioration and degradation of all materials used on the vapor-deposited side. The deterioration of the material used on the vapor-deposited side becomes a cause of increased non-uniformity in device characteristics, which directly leads to a decrease in manufacturing yield. Therefore, by vapor-depositing the cover layer at a low temperature, the deterioration and degradation of the material used on the vapor-deposited side can be suppressed, thereby enabling production with a high yield.

[0189] In addition, specific examples of other materials that can be used for the cap layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviated as BisBTc), 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), etc.

[0190] In addition, when the cap layer is formed in a manner in contact with the electrode, when a π-electron-deficient heteroaromatic compound is used, it sometimes interacts with metals such as silver (Ag), gold (Au) and aluminum (Al) used for the electrode (forming a coordinate bond) and light absorption is observed in the visible region and the near-infrared region. In this case, the light generated in the light-emitting layer is absorbed and the external extraction efficiency is likely to decrease. In order to suppress the decrease in external extraction efficiency, the cap layer preferably does not contain a π-electron-deficient heteroaromatic compound. Specifically, it is preferred to use an organic compound represented by the general formula (G1) of one embodiment of the present invention that does not have a π-electron-deficient heteroaromatic ring as a substituent.

[0191] In addition, it is preferred that the LUMO (Lowest Unoccupied Molecular Orbital: lowest unoccupied molecular orbital) energy level of the compound used for the capping layer is high (the LUMO energy level is shallow). When a compound having a high LUMO energy level to a certain extent is used, the light absorption caused by the interaction between the compound and the above-mentioned metal may be small. Therefore, in the case of a compound having a high LUMO energy level to a certain extent, it is possible to use a compound having a π-electron-deficient heteroaromatic ring as the capping layer. For example, a material having a LUMO energy level of a compound for the capping layer of greater than -2.7 eV, preferably greater than -2.6 eV, and more preferably greater than -2.5 eV can be used. In addition, the LUMO energy level of the compound used for the capping layer is preferably higher than the LUMO energy level of the compound used for the electron transport layer (for example, the electron transport layer in contact with the electrode). In addition, when the light-emitting device includes a plurality of electron transport layers (for example, two or three layers), the following material can be used: the LUMO energy level of the compound used for the capping layer is higher than the LUMO energy level of the compound contained in each of the plurality of electron transport layers.

[0192] In addition, by adjusting the thickness of the cap layer, light interference can be utilized. For example, the organic compound represented by the general formula (G1) of one embodiment of the present invention has a high ordinary light refractive index, so the thickness at which the light extraction efficiency is maximized can be reduced, thereby suppressing the amount of material used. Specifically, by making the thickness of the cap layer for the blue light-emitting element around 60 nm, that is, within the range of 50 nm to 70 nm, the maximum luminous efficiency can be obtained.

[0193] <<Luminescent Layer>> The light-emitting layer (113, 113a, 113b) is a layer containing a light-emitting substance. Note that as the light-emitting substance that can be used for the light-emitting layer (113, 113a, 113b), substances that emit light in colors such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red can be used as appropriate. In addition, when multiple light-emitting layers are included, by using different light-emitting substances in each light-emitting layer, a structure that emits different light-emitting colors (for example, white light obtained by combining complementary light-emitting colors) can be obtained. Furthermore, a stacked structure can also be used in which a single light-emitting layer contains different light-emitting substances.

[0194] Furthermore, the light-emitting layer (113, 113a, 113b) may contain one or more organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0195] Note that when multiple host materials are used in the light-emitting layer (113, 113a, 113b), it is preferred to use a substance with a larger energy gap than the existing guest material and the first host material as the newly added second host material. In addition, it is preferred that the lowest singlet excitation energy level (S1 energy level) of the second host material is higher than the S1 energy level of the first host material, and the lowest triplet excitation energy level (T1 energy level) of the second host material is higher than the T1 energy level of the guest material. In addition, it is preferred that the lowest triplet excitation energy level (T1 energy level) of the second host material is higher than the T1 energy level of the first host material. By adopting the above structure, an excimer complex can be formed by two host materials. Note that in order to efficiently form an excimer complex, it is particularly preferred to combine a compound that easily receives holes (hole transport material) and a compound that easily receives electrons (electron transport material). In addition, by adopting the above structure, high efficiency, low voltage and long life can be achieved at the same time.

[0196] Note that as the organic compound used as the above-mentioned main material (including the first main material and the second main material), as long as the conditions of the main material for the light-emitting layer are met, organic compounds such as hole transport materials that can be used for the above-mentioned hole transport layer (112, 112a, 112b) or electron transport materials that can be used for the electron transport layer (114, 114a, 114b) described later can be used, and exciplexes formed by multiple organic compounds (the above-mentioned first main material and the second main material) can also be used. In addition, the exciplex formed by multiple organic compounds in an excited state has the function of a TADF material that can convert triplet excitation energy into singlet excitation energy because the difference between the S1 energy level and the T1 energy level is extremely small. As a combination of multiple organic compounds that form an exciplex, for example, it is preferred that one has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. In addition, as one of the combinations forming the exciplex, phosphorescent light-emitting substances such as iridium, rhodium or platinum organic metal complexes or metal complexes can also be used. The organic compound described in Embodiment 1 has an electron-transporting property and can be effectively used as a first host material. Furthermore, the organic compound has a hole-transporting property and can also be used as a second host material.

[0197] There are no particular limitations on the luminescent material that can be used in the luminescent layer (113, 113a, 113b), and a luminescent material that converts singlet excitation energy into light in the visible light region or a luminescent material that converts triplet excitation energy into light in the visible light region can be used.

[0198] [Luminescent material that converts singlet excitation energy into luminescence] Examples of luminescent materials that can be used in the light-emitting layers (113, 113a, 113b) and that convert singlet excitation energy into luminescence include the following fluorescent materials (fluorescent materials). Examples include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. Pyrene derivatives are particularly preferred due to their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N'-bis(dibenzothiophene-2-yl)-N,N'-bis(dibenzothiophene-1, -diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc.

[0199] In addition, 5,6-bis[4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthracenyl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: Y GA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthracenyl)triphenylamine (abbreviated as: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazol-3-amine (abbreviated as: PCAPA), 4-(10-phenyl triphenylamine (abbreviated as: PCBAPA), 4-[4-(10-phenyl-9-anthracenyl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as: PCBAPBA), perylene, 2,5,8,11-tetra-(tert-butyl)perylene (abbreviated as: TBP), N,N"-(2-tert-butylanthracene-9,10-diyldiphenylamine -4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviated as: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviated as: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPAPPA), etc.

[0200] In addition, N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N, 9-Triphenylanthracen-9-amine (abbreviated as DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviated as DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenylnaphthacene (abbreviated as BPT), 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-ylidene)malononitrile (abbreviated as DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCM2), N,N,N',N'-tetra(4 -methylphenyl) tetracene-5,11-diamine (abbreviated as p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviated as p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCJTI), yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)malononitrile (abbreviated as BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as BisDCJTM), 1,6BnfAPrn-03, N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;[6,7-b']bisbenzofuran-3,10-diamine (abbreviated as 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as 3,10FrA2Nbf(IV)-02), and the like. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used.

[0201] [Luminescent material that converts triplet excitation energy into luminescence] Next, examples of a light-emitting substance that converts triplet excitation energy into light emission and can be used in the light-emitting layer 113 include a substance that emits phosphorescence (phosphorescent substance) and a thermally activated delayed fluorescence (TADF) material that exhibits thermally activated delayed fluorescence.

[0202] Phosphorescent materials refer to compounds that exhibit phosphorescence but no fluorescence at any temperature in the temperature range (i.e., 77K or more and 313K or less) above a low temperature (e.g., 77K or more and 313K or less) below room temperature. The phosphorescent material preferably comprises a metal element with a large spin-orbit interaction, and an organometallic complex, a metal complex (platinum complex), a rare earth metal complex, or the like can be used. Specifically, it is preferred to include a transition metal element, particularly preferably a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)), and particularly preferably iridium. Iridium is preferred because it can increase the probability of direct transition between the singlet ground state and the triplet excited state.

[0203] [Phosphorescent substance (450nm to 570nm: blue or green)] Examples of phosphorescent substances that emit blue or green light and have an emission spectrum with a peak wavelength of 450 nm to 570 nm include the following substances.

[0204] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(iPrptz-3b)3]), tris[ ...azole]iridium(III) (abbreviated as [Ir( [3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(iPr5btz)3]) and other organometallic complexes having a 4H-triazole ring; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Prptz1-Me)3]) and other organic metal complexes having a 1H-triazole ring Organometallic complexes; organometallic complexes having an imidazole ring, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviated as [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as [Ir(dmpimpt-Me)3]); and bis[2-(4',6'-difluorophenyl)pyridinium-N,C2']iridium(III)tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinium-N, C2']iridium(III)picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinium-N, C2'}iridium(III)picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N, C2']iridium(III)acetylacetonate (abbreviation: FIr(acac)), etc., which have phenylpyridine derivatives having electron-withdrawing groups as ligands.

[0205] [Phosphorescent substances (495nm to 590nm: green or yellow)] Examples of phosphorescent substances that emit green or yellow light and have an emission spectrum with a peak wavelength of 495 nm to 590 nm include the following substances.

[0206] For example, tris(4-methyl-6-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(tBuppm)3]), (acetylacetonate)bis(6-methyl-4-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(mppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(tBuppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(tBuppm)2(acac)]), (acetylacetonate)bis[6-(2-norbornyl)-4-phenylpyrimidinyl]iridium(III) (abbreviated as [Ir(nbppm)2(acac)]), (acetylacetonate)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinyl]iridium(III) (abbreviated as [Ir(mpmppm)2( acac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviated as [Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinyl)iridium(III) (abbreviated as [Ir(dppm)2(acac)]), etc.; (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazine)iridium(III) (abbreviated as [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviated as [Ir(mppr-iPr)2(acac)]), etc.; tris(2-phenylpyridinium-N,C 2’ )iridium (III) (abbreviated as [Ir(ppy)3]), bis(2-phenylpyridinium-N, C 2’ )iridium(III) acetylacetonate (abbreviated as [Ir(ppy)2(acac)]), bis(benzo[h]quinolinolato)iridium(III) acetylacetonate (abbreviated as [Ir(bzq)2(acac)]), tris(benzo[h]quinolinolato)iridium(III) (abbreviated as [Ir(bzq)3]), tris(2-phenylquinolinolato-N,C 2’ )iridium (III) (abbreviated as [Ir(pq)3]), bis(2-phenylquinoline-N, C 2’)iridium(III) acetylacetonate (abbreviated as [Ir(pq)2(acac)]), bis[2-(2-pyridyl-κN)phenyl-κC][2-(4-phenyl-2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as [Ir(ppy)2(4dppy)]), bis[2-(2-pyridyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC], [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN 2 )phenyl-κC]iridium(III) (abbreviated as: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridyl-κN]phenyl-κC}iridium(III) (abbreviated as: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl Organometallic iridium complexes having a pyridine ring, such as [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mdppy)); bis(2,4-diphenyl-1,3-oxazol-N,C 2’ )iridium(III) acetylacetonate (abbreviated as [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridine-N,C 2’ Iridium(III) acetylacetonate (abbreviated as [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazole-N,C 2’ ) organic metal complexes such as iridium (III) acetylacetonate (abbreviated as [Ir(bt)2(acac)]), and rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium (III) (abbreviated as [Tb(acac)3(Phen)]).

[0207] [Phosphorescent substances (570nm to 750nm: yellow or red)] Examples of phosphorescent substances that exhibit yellow or red light and have an emission spectrum with a peak wavelength of 570 nm to 750 nm include the following substances.

[0208] For example, (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinyl]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinyl](dipivaloylmethane)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (dipivaloylmethane)bis[4,6-di(naphthalene-1-yl)pyrimidinyl]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), etc. can be mentioned. Organometallic complexes with pyrimidine rings; (acetylacetonato)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dipivaloylmethane)iridium(III) (abbreviated as [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviated as [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviated as [Ir(dmdppr-dmCP)2(dpm)]), bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedione-κ2O, O') iridium (III) (abbreviated as [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis(2-methyl-3-phenylquinoxalinato]-N, C 2’ )iridium (III) (abbreviated as [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato)-N,C 2’ ]iridium (III) (abbreviated as [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium (III) (abbreviated as [Ir(Fdpq)2(acac)]), etc.; tris(1-phenylisoquinoline-N,C 2’ )iridium (III) (abbreviated as [Ir(piq)3]), bis(1-phenylisoquinoline-N, C 2’) iridium (III) acetylacetonate (abbreviated as [Ir(piq)2(acac)]) and bis[4,6-dimethyl-2-(2-quinolin-κN)phenyl-κC](2,4-pentanedione-κ 2 Organic metal complexes having a pyridine ring, such as iridium (III) (abbreviated as [Ir(dmpqn)2(acac)]); platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (abbreviated as [PtOEP]); or rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedione (propanedionato))(monophenanthroline)europium (III) (abbreviated as [Eu(DBM)3(Phen)]) and tris[1-(2-thiophenoyl)-3,3,3-trifluoroacetone](monophenanthroline)europium (III) (abbreviated as [Eu(TTA)3(Phen)]).

[0209] [TADF materials] In addition, as TADF materials, the following materials can be used. TADF material refers to a material that has a small energy difference between the S1 energy level and the T1 energy level (preferably 0.2 eV or less) and can use tiny thermal energy to up-convert the triplet excited state to the singlet excited state (reverse intersystem crossing) and efficiently presents luminescence (fluorescence) from the singlet excited state. The conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excited energy level and the singlet excited energy level is greater than 0 eV and less than 0.2 eV, preferably greater than 0 eV and less than 0.1 eV. The delayed fluorescence emitted by the TADF material refers to luminescence having the same spectrum as general fluorescence but with a very long lifetime. Its lifetime is 1×10 -6 seconds or 1×10 -3 seconds or more.

[0210] In addition, TADF materials can be used as electron-transporting materials, hole-transporting materials, and host materials.

[0211] Examples of TADF materials include fullerenes and their derivatives, acridine derivatives such as prussin, and eosin. Furthermore, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be used. As metal-containing porphyrins, for example, there can be mentioned protoporphyrin-tin fluoride complex (abbreviated as: SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (abbreviated as: SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviated as: SnF2(HematoIX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviated as: SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviated as: SnF2(OEP)), protoporphyrin-tin fluoride complex (abbreviated as: SnF2(Etio I)) and octaethylporphyrin-platinum chloride complex (abbreviated as: PtCl2OEP).

[0212] [Chemical Formula 36]

[0213] In addition to the above, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(1 0H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthene-9-one (abbreviated as: ACRXTN), dimethylbenzylbenzene [4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviated as DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracenes]-10'-one (abbreviated as ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d]pyrimidine (abbreviated as 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d]pyrimidine (abbreviated as 4PCCzBfpm), -3,3'-bi-9H-carbazole-9-yl)phenyl]benzofurano[3,2-d]pyrimidine (abbreviated as: 4PCCzPBfpm), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as: mPCCzPTzn-02), and other heteroaromatic compounds having π-electron-rich heteroaromatic compounds and π-electron-deficient heteroaromatic compounds.

[0214] Furthermore, materials in which a π-electron-rich heteroaromatic compound and a π-electron-deficient heteroaromatic compound are directly bonded are particularly preferred because both the π-electron-rich heteroaromatic compound has strong donor properties and the π-electron-deficient heteroaromatic compound has strong acceptor properties, minimizing the energy difference between the singlet excited state and the triplet excited state. Furthermore, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium can also be used. This TADF material has a short luminescence lifetime (excitation lifetime), thus suppressing efficiency reduction in high-brightness regions of light-emitting devices.

[0215] [Chemical Formula 37]

[0216] In addition to the above, as a material having the function of converting triplet excitation energy into luminescence, a nanostructure of a transition metal compound having a perovskite structure can be cited. Metal halide perovskite nanostructures are particularly preferred. As the nanostructure, nanoparticles and nanorods are preferred.

[0217] In the light-emitting layer (113, 113a, 113b, 113c), as an organic compound (host material, etc.) used in combination with the above-mentioned light-emitting substance (guest material), one or more substances having a larger energy gap than the light-emitting substance (guest material) can be used.

[0218] [Fluorescent host material] When the light-emitting material used in the light-emitting layer (113, 113a, 113b, 113c) is a fluorescent light-emitting material, it is preferable to use an organic compound (host material) used in combination with the light-emitting material, which has a large energy level of the singlet excited state and a small energy level of the triplet excited state, or an organic compound with a high fluorescence quantum yield. Therefore, as long as the organic compound meets the above conditions, the hole transport material (described above) and the electron transport material (described later) shown in this embodiment can be used. In addition, the organic compound described in Embodiment 1 can be used.

[0219] Although some of the contents are repeated in the above specific examples, from the viewpoint of preferably using in combination with a luminescent substance (fluorescent luminescent substance), examples of organic compounds (host materials) include anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, (chrysene) derivatives, dibenzo[g,p] Derivatives and other fused polycyclic aromatic compounds.

[0220] Specific examples of organic compounds (host materials) preferably used in combination with fluorescent substances include 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as DPCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9,10-diphenylanthracene (abbreviated as DPAnth), N,N-diphenyl-9-[4-( [4-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl]-9H-carbazole-3-amine (abbreviated as: CzA1PA), 4-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviated as: PCAPBA), N-(9,10-diphenyl-2-anthracenyl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCAPA), 6,12-dimethoxy-5,11-diphenyl 、N,N,N',N',N",N",N"',N"'-octaphenyldibenzo[g,p] -2,7,10,15-tetramine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α, β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracen-yl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: anthracene (abbreviated as: 2αN-αNPhA), 9-(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviated as: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviated as: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviated as: αN-αNPAnth), 9-(2-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviated as: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviated as: 2αN-βNPhA), 9-(2-naphthyl)-10-phenylanthracene (abbreviated as: 2αN-βNPhA), )-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthryl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), 9,9'-bianthracene (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)phenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)phenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrene)benzene (abbreviation: TPB3), 5,12-diphenyltetracene, 5,12-bis(biphenyl-2-yl)tetracene, etc.

[0221] [Phosphorescent host material] When the light-emitting substance used in the light-emitting layer (113, 113a, 113b, 113c) is a phosphorescent substance, the organic compound (host material) used in combination with the light-emitting substance may be selected to have a triplet excitation energy (the energy difference between the ground state and the triplet excited state) greater than the triplet excitation energy of the light-emitting substance. Note that when multiple organic compounds (e.g., a first host material and a second host material (or auxiliary material)) are used in combination with the light-emitting substance to form an exciplex, it is preferable to use these multiple organic compounds mixed with the phosphorescent substance. Alternatively, the organic compounds described in Embodiment 1 may be used.

[0222] As the host material, a compound having a naphthalene ring can also be used. By having a naphthalene ring, the electron transport property or Tg can be improved. In addition, a compound having an anthracene ring and a naphthalene ring can also be used. The number of naphthalene rings possessed by the host material is the same as the number of naphthalene rings possessed by the cap layer material, preferably less.

[0223] By adopting this structure, luminescence can be efficiently achieved using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the exciplex to the luminescent substance. As a combination of multiple organic compounds, it is preferred to use a combination that easily forms an exciplex, and particularly preferred is a combination of a compound that easily accepts holes (hole-transporting materials) and a compound that easily accepts electrons (electron-transporting materials).

[0224] Although some of the contents are repeated in the above specific examples, from the viewpoint of preferred combination with a light-emitting substance (phosphorescent light-emitting substance), examples of the organic compound (host material, auxiliary material) include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), benzimidazole derivatives (organic compounds having a dibenzofuran ring), and the like. Organisms (organic compounds having a benzimidazole ring), quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), furanodiazine derivatives (organic compounds having a furanodiazine ring), zinc and aluminum metal complexes, etc.

[0225] Note that among the above organic compounds, specific examples of aromatic amines and carbazole derivatives as organic compounds having a high hole-transporting property include the same materials as the specific examples of the hole-transporting materials described above, and these materials are preferably used as the host material.

[0226] Specific examples of dibenzothiophene derivatives and dibenzofuran derivatives, which are organic compounds having high hole transport properties among the above-mentioned organic compounds, include 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), DBT3P- II, 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviated as: DBTFLP-III), 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as: DBTFLP-IV), 4-[3-(triphenyl-2-yl)phenyl]dibenzothiophene (abbreviated as: mDBTPTp-II), etc. These materials are preferably used as the main materials.

[0227] In addition, preferred host materials include metal complexes with oxazole-type ligands and thiazole-type ligands, such as bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated as: ZnPBO) and bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated as: ZnBTZ).

[0228] In addition, among the above-mentioned organic compounds, specific examples of oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, and phenanthroline derivatives as organic compounds with high electron transport properties include 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4 Organic compounds containing a heteroaromatic ring having a polyazole ring, such as -triazole (abbreviation: TAZ), 2,2',2"-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline). organic compounds containing a heteroaromatic ring having a pyridine ring, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9 [f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), etc.These materials are preferably used as the host material.

[0229] Among the above-mentioned organic compounds, specific examples of pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and furanodiazine derivatives as organic compounds with high electron transport properties include 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviated as: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophene-4-yl)phenyl]pyrimidine (abbreviated as: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine) (abbreviated as: 4,6mCzP2Pm), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]pyrimidine] ]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviated as TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviated as 4,6mCzBP2Pm), 2-[3'-(9,9- dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviated as: mFBPTzn), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviated as: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as: 9mDBtBPNfpr), 9-[(3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as: : 9pmDBtBPNfpr), 11-[(3'-(dibenzothiophene-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviated as: 11mDBtBPPnfpr), 11-[3'-(dibenzothiophene-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 11-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviated as 12PCCzPnfpr), 9-[(3'-9-phenyl-9H-carbazol-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho [1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9-[3-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenyl] naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as: 9mPCCzPNfpr), 9-[3'-(2,8-diphenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine, 11-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviated as: mINc(II)PTzn), 2-[3'-(triphenylene-2 [1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviated as mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn), 2,6-bis(4-naphth-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1'-biphenyl-4'-yl)-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn),Organic compounds containing a heteroaromatic ring having a diazine ring, such as 1-(1-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviated as mBP-TPDBfTzn), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviated as 6mBP-4Cz2PPm), and 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviated as 6BP-4Cz2PPm), are preferably used as host materials.

[0230] Among the above-mentioned organic compounds, specific examples of metal complexes of organic compounds with high electron transport properties include: tris(8-hydroxyquinoline)aluminum(III) (abbreviated as: Alq), tris(4-methyl-8-hydroxyquinoline)aluminum(III) (abbreviated as: Almq3), bis(10-hydroxybenzo[h]quinoline)beryllium(II) (abbreviated as: BeBq2), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviated as: BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviated as: Znq); metal complexes having a quinoline ring or a benzoquinoline ring, etc. These materials are preferably used as the main material.

[0231] In addition, as preferred main materials, polymer compounds such as poly(2,5-pyridinediyl) (abbreviated as: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviated as: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviated as: PF-BPy) can also be used.

[0232] Furthermore, bipolar 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviated as PCCzQz), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviated as 2mpPCBPDBq), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indene, which are organic compounds with high hole transport properties and high electron transport properties, Organic compounds having a diazine ring, such as indole[2,1-b]carbazole (abbreviated as: mINc(II)PTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazine-2-yl]-11,12-dihydro-12-phenyl-indole[2,3-a]carbazole (abbreviated as: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviated as: PC-cgDBCzQz), can also be used as the main material.

[0233] <<Hole Injection Layer>> The hole injection layer (111, 111a, 111b) is a layer that injects holes from the first electrode 101 of the anode and the charge generation layer (106, 106a, 106b) into the organic compound layer (103, 103a, 103b), and contains an organic acceptor material and a material with high hole injection properties.

[0234] Note that in the hole injection layer (111, 111a, 111b), the organic compound with hole transport properties used in the composite material is more preferably a substance with a low HOMO (Highest Occupied Molecular Orbital) energy level of -5.7 eV or higher and -5.4 eV or lower. When the organic compound with hole transport properties used in the composite material has a low HOMO energy level, holes are easily injected into the hole transport layer, and a light-emitting device with a long life can be easily obtained. In addition, when the organic compound with hole transport properties used in the composite material is a substance with a low HOMO energy level, the induction of holes is appropriately suppressed, thereby realizing a light-emitting device with a longer life.

[0235] The hole injection layer (111, 111a, 111b) has the function of lowering the injection barrier of holes from one of the pair of electrodes (the first electrode 101 or the second electrode 102) to promote hole injection, and is formed using, for example, a transition metal oxide, a phthalocyanine derivative, or an aromatic amine. Examples of transition metal oxides include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. Examples of phthalocyanine derivatives include phthalocyanine or metal phthalocyanine. Examples of aromatic amines include benzidine derivatives or phenylenediamine derivatives. In addition, polymer compounds such as polythiophene or polyaniline can also be used, typically poly(ethylenedioxythiophene) / polystyrenesulfonic acid as a self-doped polythiophene.

[0236] As the hole injection layer (111, 111a, 111b), a layer having a composite material composed of a hole transport material and a material having the property of receiving electrons from the hole transport material can be used. Alternatively, a stack of a layer containing a material exhibiting electron-accepting properties and a layer containing a hole transport material can be used. In a steady state or in the presence of an electric field, charge transfer can be carried out between these materials. As materials exhibiting electron-accepting properties, organic acceptors such as quinone dimethane derivatives, tetrachlorobenzoquinone derivatives or hexaazatriphenylene derivatives can be cited. Specifically, compounds having electron-withdrawing groups (halogen or cyano groups) such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) can be cited. In addition, transition metal oxides, such as oxides of Group 4 to Group 8 metals, can also be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be used. Molybdenum oxide is particularly preferred because it is stable even in the atmosphere, has low hygroscopicity, and is easy to handle.

[0237] As the hole transport material, a material having a hole transport property higher than an electron transport property can be used, and preferably a material having a 1×10 -6 cm 2 / Vs or higher hole mobility. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc. that can be used as hole transport materials for the light-emitting layer 113 can be used. The organic compound represented by the general formula (G1) in one embodiment of the present invention is also a carbazole derivative. The above-mentioned hole transport material can also be a polymer compound.

[0238] <<Hole Transport Layer>> The hole transport layer (112, 112a, 112b) is a layer containing a hole transport material, and the hole transport materials exemplified as the materials for the hole injection layer (111, 111a, 111b) can be used. The hole transport layer (112, 112a, 112b) has the function of transporting holes injected into the hole injection layer (111, 111a, 111b) to the light emitting layer (113, 113a, 113b), and therefore preferably has a HOMO level that is the same as or close to the HOMO level of the hole injection layer (111, 111a, 111b).

[0239] In addition, the hole transport material preferably has a 1×10 -6 cm 2 / Vs or higher. However, as long as the hole transport property is higher than the electron transport property, a substance other than the above substances can be used. In addition, the layer including the substance with high hole transport property is not limited to a single layer, and two or more layers composed of the above substances can be stacked.

[0240] In addition, the ordinary light refractive index of the hole transport layer or hole injection layer is preferably lower than that of the cap layer. In addition, the ordinary light refractive index of the hole transport layer or hole injection layer is preferably lower than that of the light-emitting layer. Specifically, the ordinary light refractive indexes of the hole transport material, the main material of the light-emitting layer, and the cap layer material when deposited can be compared. When the ordinary light refractive index relationship during film formation satisfies the relationship of hole transport material < main material < cap layer material, extraction efficiency can be improved, which is preferred.

[0241] In addition, when the total thickness (thickness m) of the layers (for example, a transparent electrode, a hole injection layer, a hole transport layer, and an electron blocking layer) sandwiched between the reflective electrode and the light-emitting layer is set to a thickness that utilizes optical interference (microcavity), the light extraction efficiency is improved, so it is preferred. In this case, it is more preferred that a layer having a thickness of m be a stacked structure of a layer (layer L) having a low ordinary light refractive index and a layer (layer H) having an ordinary light refractive index higher than that of layer L, so that the light incident from the light-emitting layer is reflected at the interface between layer L and layer H and amplified by optical interference. In this case, when the difference in ordinary light refractive index between layer L and layer H is greater than 0.1, preferably greater than 0.2, and more preferably greater than 0.3 at the emission wavelength of the light-emitting element, the interface reflection increases, so it is preferred. Note that because the organic compound represented by the general formula (G1) of one embodiment of the present invention has a high refractive index, it can be used as the above-mentioned layer H.

[0242] <<Electron Transport Layer>> The electron transport layer (114, 114a, 114b) has the function of transporting electrons injected from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) through the electron injection layer (115, 115a, 115b) to the light-emitting layer 113. As the electron transport material, a material with a higher electron transport property than a hole transport property can be used, and preferably a material with a 1×10 -6 cm 2 / Vs or more of the electron mobility. As a compound that easily accepts electrons (a material with electron transport properties), a compound having a π-electron-deficient heteroaromatic ring skeleton such as a nitrogen-containing heteroaromatic compound or an organic metal complex can be used. Specifically, organic metal complexes including quinoline ligands, benzoquinoline ligands, oxazole ligands or thiazole ligands that can be used as electron transport materials for the light-emitting layer 113 can be cited. In addition, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, triazine derivatives, etc. can also be cited. In addition, it is preferred to have 1×10 -6 cm 2 A substance having an electron mobility of 1000 nm / Vs or higher. Any substance other than the above substances may be used as long as the electron transport property is higher than the hole transport property. In addition, the electron transport layer (114, 114a, 114b) is not limited to a single layer, and two or more layers composed of the above substances may be stacked.

[0243] In addition, as an electron transport material, a compound having a naphthalene ring can also be used. For example, the reactivity of naphthalene is higher than that of benzene, which is advantageous from a synthetic point of view. In addition, a compound containing naphthalene can improve electron transport or Tg. In addition, by reducing the ordinary light refractive index, the electron transport layer can improve the light extraction efficiency. Therefore, the number of naphthalene rings possessed by the electron transport material is two or less, preferably one. In addition, the ordinary light refractive index of the electron transport layer is preferably lower than that of the cap layer. Therefore, the number of naphthalene rings contained in the electron transport material is the same as the number of naphthalene rings contained in the cap layer material, preferably less. For example, as an electron transport material, an azine compound (a compound having a triazine skeleton or a pyrimidine skeleton) containing a naphthalene ring can be used. In addition, as long as the light extraction efficiency is obtained, the difference between the ordinary light refractive index of the electron transport layer and the cap layer can also be small. In this case, the electron transport layer and the cap layer can also use the same organic compound.

[0244] In addition, a compound having a cyano group can also be used as an electron transport material. By using a compound having a cyano group in the electron transport layer, it is sometimes possible to reduce the driving voltage of the device, improve efficiency or increase the life of the component. Note that when the number of cyano groups is large, the carrier balance in the device may be disrupted, so the number of cyano groups is two or less, preferably one or less. The number of cyano groups contained in the electron transport material is the same as the number of cyano groups contained in the cover layer material or is preferably less than the number of cyano groups contained in the cover layer material. As an electron transport material, for example, an azine compound containing a cyano group or an azine compound containing a cyano group and a naphthalene ring can be used.

[0245] In addition, as an electron transport material, a compound having an anthracene ring (also referred to as an anthracene compound) can be used. In addition, by adopting a structure having a naphthalene ring, electron transport or Tg can be improved. Therefore, a structure having an anthracene ring and a naphthalene ring can also be adopted. Note that the number of naphthalene rings contained in the electron transport material is preferably less than the number of naphthalene rings contained in the capping material.

[0246] Furthermore, the electron transport layer or electron injection layer preferably has a lower ordinary light refractive index than the light-emitting layer. Furthermore, when considering the capping layer, it is preferred that the ordinary light refractive index of the film formed satisfies the relationship of electron transport material < host material < capping layer material, as this improves extraction efficiency.

[0247] Furthermore, a layer for controlling the movement of electron carriers can be provided between the electron transport layer (114, 114a, 114b) and the light-emitting layer (113, 113a, 113b). This layer is formed by adding a small amount of a substance with high electron-trapping properties to the aforementioned material with high electron transport properties. By suppressing the movement of electron carriers, the carrier balance can be adjusted. This structure is highly effective in suppressing problems caused by electrons passing through the light-emitting layer (e.g., a reduction in device life).

[0248] <<Electron Injection Layer>> The electron injection layer (115, 115a, 115b) has the function of lowering the injection barrier of electrons from the second electrode 102 to promote electron injection. For example, Group 1 metals, Group 2 metals or their oxides, halides, carbonates, etc. can be used. In addition, a composite material of the above-mentioned electron transport material and a material having the property of supplying electrons to the electron transport material can also be used. As materials having electron-donating properties, Group 1 metals, Group 2 metals or their oxides can be cited. Specifically, lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF2) and lithium oxide (LiO x) or other alkali metals, alkaline earth metals, or compounds of these metals. In addition, rare earth metal compounds such as erbium fluoride (ErF3) can be used. In addition, an electron salt can also be used for the electron injection layer 115. As the electron salt, for example, a substance that adds electrons to a mixed oxide of calcium and aluminum at a high concentration can be cited. In addition, a substance that can be used for the electron transport layer (114, 114a, 114b) can also be used for the electron injection layer (115, 115a, 115b).

[0249] In addition, a composite material formed by mixing an organic compound with an electron donor (donor) can also be used for the electron injection layer (115, 115a, 115b). This composite material has good electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material that has good performance in transporting the generated electrons. Specifically, for example, the substance constituting the electron transport layer 114 as described above (organometallic complexes or heteroaromatic compounds, etc.) can be used. As an electron donor, any substance that exhibits electron-donating properties for organic compounds can be used. Specifically, alkali metals, alkaline earth metals or rare earth metals are preferably used, and lithium, sodium, cesium, magnesium, calcium, erbium, ytterbium, etc. can be mentioned. In addition, alkali metal oxides or alkaline earth metal oxides are preferably used, and lithium oxide, calcium oxide, barium oxide, etc. can be mentioned. In addition, Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviated as: TTF) can also be used.

[0250] In addition, the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron transport layer and electron injection layer can be formed by evaporation (including vacuum evaporation), inkjet method, coating method, gravure printing and the like. In addition, as the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron transport layer and electron injection layer, in addition to the above-mentioned materials, inorganic compounds such as quantum dots or high molecular compounds (oligomers, dendrimers, polymers, etc.) can also be used.

[0251] As quantum dots, colloidal quantum dots, alloy quantum dots, core-shell quantum dots, core-type quantum dots, etc. can be used. In addition, quantum dots containing elements from Group 2 and Group 16, Group 13 and Group 15, Group 13 and Group 17, Group 11 and Group 17, or Group 14 and Group 15 can also be used. Alternatively, quantum dots containing elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), and aluminum (Al) can be used.

[0252] <> The first electrode 101 and the second electrode 102 function as an anode or a cathode of a light-emitting element. The first electrode 101 and the second electrode 102 can be formed using a metal, an alloy, a conductive compound, a mixture thereof, a stacked structure, or the like.

[0253] One of the first electrode 101 and the second electrode 102 is preferably formed using a conductive material having a function of reflecting light. As the conductive material, aluminum (Al) or an alloy containing Al can be cited. As the alloy containing Al, an alloy containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni) and lanthanum (La)) can be cited, for example, an alloy containing Al and Ti or an alloy containing Al, Ni and La. Aluminum (Al) has low resistivity and high light reflectivity. In addition, since aluminum (Al) is contained in large quantities in the earth's crust and is inexpensive, the use of Al can reduce the manufacturing cost of the light-emitting element. In addition, silver (Ag), alloys containing Ag, N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), and gold (Au)), etc. can also be used. Examples of alloys containing silver (Ag) include the following: alloys containing silver, palladium, and copper; alloys containing silver and copper; alloys containing silver and magnesium; alloys containing silver and nickel; alloys containing silver and gold; and alloys containing silver and ytterbium. In addition to the above materials, transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium can be used.

[0254] Furthermore, light obtained from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Therefore, at least one of the first electrode 101 and the second electrode 102 is preferably formed using a conductive material having a light-transmitting function. Examples of such conductive materials include those having a visible light transmittance of 40% or more and 100% or less, preferably 60% or more and 100% or less, and a resistivity of 1×10 -2 Conductive materials with a resistance of Ω·cm or less.

[0255] Furthermore, the first electrode 101 and the second electrode 102 are preferably formed using a conductive material having a function of transmitting light and a function of reflecting light. Examples of such conductive materials include those having a visible light reflectivity of 20% or more and 80% or less, preferably 40% or more and 70% or less, and a resistivity of 1×10 -2Ω·cm or less conductive material. For example, one or more conductive metals, alloys, and conductive compounds can be used. Specifically, metal oxides such as indium tin oxide (hereinafter referred to as ITO), indium tin oxide containing silicon or silicon oxide (abbreviated as: ITSO), indium zinc oxide (Indium Zinc Oxide), indium oxide-tin oxide containing titanium, indium-titanium oxide, and indium oxide containing tungsten oxide and zinc oxide. In addition, a metal film having a thickness that allows light to pass through (preferably a thickness of 1 nm or more and 30 nm or less) can be used. As the metal, for example, alloys of Ag, Ag and Al, Ag and Mg, Ag and Au, and Ag and Yb can be used.

[0256] Note that in this specification, etc., as a material having a light-transmitting function, a material having a function of transmitting visible light and having conductivity may be used, such as the oxide conductor represented by ITO (Indium Tin Oxide), an oxide semiconductor, or an organic conductor containing an organic substance. As an organic conductor containing an organic substance, for example, a composite material containing a mixed organic compound and an electron donor (donor), a composite material containing a mixed organic compound and an electron acceptor (acceptor), etc. can be cited. Inorganic carbon materials such as graphene can also be used. In addition, the resistivity of the material is preferably 1×10 5 Ω·cm or less, more preferably 1×10 4 Ω·cm or less.

[0257] In addition, one or both of the first electrode 101 and the second electrode 102 may be formed by stacking a plurality of the above materials.

[0258] In order to improve the light extraction efficiency, a material having a refractive index higher than that of an electrode can be formed in contact with an electrode having a function of transmitting light. As such a material, as long as it has the function of transmitting visible light, it can be a conductive material or a non-conductive material. For example, in addition to the above-mentioned oxide conductors, oxide semiconductors and organic substances can also be cited. As organic substances, for example, materials exemplified as light-emitting layers, hole injection layers, hole transport layers, electron transport layers or electron injection layers can be cited. In addition, inorganic carbon materials or metal films having a thickness that allows light to pass through can also be used, and multiple layers having a thickness of several nm to tens of nm can also be stacked.

[0259] When the first electrode 101 or the second electrode 102 is used as a cathode, a material with a small work function (3.8 eV or less) is preferably used. For example, elements belonging to Group 1 or Group 2 of the periodic table (e.g., alkali metals such as lithium, sodium, and cesium, alkaline earth metals such as calcium and strontium, magnesium, etc.), alloys containing these elements (e.g., Ag and Mg or Al and Li), rare earth metals such as europium (Eu) and Yb, alloys containing these rare earth metals, alloys containing aluminum and silver, etc. can be used.

[0260] When the first electrode 101 or the second electrode 102 serves as an anode, a material having a large work function (4.0 eV or higher) is preferably used.

[0261] The first electrode 101 and the second electrode 102 may also be formed of a stack of a conductive material that reflects light and a conductive material that transmits light. In this case, the first electrode 101 and the second electrode 102 preferably have the function of adjusting the optical distance so that light of a desired wavelength from each light-emitting layer resonates and amplifies the light of that wavelength.

[0262] As a film forming method for the first electrode 101 and the second electrode 102, sputtering, vapor deposition, printing, coating, MBE (Molecular Beam Epitaxy), CVD (Chemical Vapor Deposition), pulsed laser deposition, ALD (Atomic Layer Deposition), etc. can be appropriately used.

[0263] <<Charge Generation Layer>> The charge generation layer 106 has the following function: when a voltage is applied between the first electrode 101 (anode) and the second electrode 102 (cathode), electrons are injected into the organic compound layer 103a and holes are injected into the organic compound layer 103b. The charge generation layer 106 can have a structure in which an electron acceptor (acceptor) is added to a hole transport material (also called a P-type layer), or a structure in which an electron donor (donor) is added to an electron transport material (also called an electron injection buffer layer). Alternatively, these two structures can be stacked. Furthermore, an electron relay layer can be provided between the P-type layer and the electron injection buffer layer. Note that by using the above-mentioned materials to form the charge generation layer 106, the increase in driving voltage caused by stacking the EL layer can be suppressed.

[0264] In the case where the charge generation layer 106 has a structure in which an electron acceptor is added to a hole transport material of an organic compound (P-type layer), the material described in this embodiment can be used as a hole transport material. In addition, as an electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as: F4-TCNQ), chloranil, etc. can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be mentioned. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be mentioned. In addition, the above-mentioned acceptor materials can also be used. In addition, a mixed film in which the materials constituting the P-type layer are mixed can be used, or a single film containing each material can be stacked.

[0265] In the case where the charge generation layer 106 has a structure in which an electron donor is added to the electron transport material (electron injection buffer layer), the material shown in this embodiment can be used as the electron transport material. In addition, as an electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 in the periodic table and their oxides or carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, etc. are preferably used. In addition, organic compounds such as tetrathianaphthacene can also be used as electron donors.

[0266] In the charge generation layer 106, when an electron relay layer is provided between the P-type layer and the electron injection buffer layer, the electron relay layer contains at least a substance having an electron transport property, and has the function of preventing the interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO energy level of the substance having an electron transport property contained in the electron relay layer is preferably between the LUMO energy level of the acceptor substance in the P-type layer and the LUMO energy level of the substance having an electron transport property contained in the electron transport layer in contact with the charge generation layer 106. The specific value of the LUMO energy level of the substance having an electron transport property in the electron relay layer is greater than -5.0 eV, preferably greater than -5.0 eV and less than -3.0 eV, more preferably greater than -4.30 eV and less than -3.00 eV, and further preferably greater than -4.30 eV and less than -3.30 eV. In addition, as the substance having an electron transport property in the electron relay layer, it is preferred to use a phthalocyanine material or an organic metal complex having a metal-oxygen bond and an aromatic ligand.

[0267] Specifically, as an organic compound that can be used for an electron relay layer, an alkylamine skeleton having a carbon number of 1 or more and 6 or less can be used. Specifically, organic compounds having a basic skeleton such as an acetamidine skeleton, a guanidine skeleton, and a pyrrolidine skeleton represented by the following structural formulas (401) to (404) can be cited. In particular, the basicity of the structural formula (403) and the structural formula (404) with a guanidine skeleton is high, so it is preferred. In addition, these organic compounds with an alkylamine skeleton preferably have electron transport properties as a substituent, and preferably have any one or more of an aromatic hydrocarbon skeleton, a π-electron-deficient heteroaromatic ring skeleton, and a nitrogen-containing heteroaromatic skeleton. Specifically, as examples, benzene skeleton, fluorene skeleton, naphthalene skeleton, anthracene skeleton, phenanthrene skeleton, triphenylene skeleton, pyrene skeleton, polyazole skeleton, pyridine skeleton, pyrimidine skeleton, pyrazine skeleton, diazine skeleton, triazine skeleton, quinoline skeleton, quinazoline skeleton, quinoxaline skeleton, phenanthroline skeleton, dibenzoquinoxaline skeleton can be cited.

[0268] [Chemical Formula 38]

[0269] Specifically, preferred are organic compounds comprising a bicyclic structure containing two or more nitrogen atoms as ring elements and a heteroaromatic ring having 2 to 30 ring carbon atoms or an aromatic hydrocarbon ring having 6 to 30 ring carbon atoms, more specifically, organic compounds comprising a 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine skeleton and a heteroaromatic ring having 2 to 30 ring carbon atoms or an aromatic hydrocarbon ring having 6 to 30 ring carbon atoms. More preferably, the organic compound is an organic compound having a linked ring structure containing two or more nitrogen atoms as ring elements and a heteroaromatic ring having 2 to 30 ring carbon atoms, more specifically, an organic compound having a 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine skeleton and a heteroaromatic ring having 2 to 30 ring carbon atoms. The organic compound is preferably an organic compound including a guanidine skeleton, and more preferably an organic compound having a molecular structure including a guanidine skeleton and a bicyclic structure containing two or more nitrogen atoms as ring elements.

[0270] More specifically, an organic compound represented by the following general formula (R1) is preferably used.

[0271] [Chemical Formula 39]

[0272] In the organic compound represented by the above general formula (R1), X is a group represented by the following general formula (R1-1), and Y is a group represented by the following general formula (R1-2). 401 and R 402Each independently represents hydrogen (including deuterium), h represents an integer of 1 to 6, and Ar represents a substituted or unsubstituted heteroaromatic ring having 2 to 30 ring carbon atoms or a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring carbon atoms. In addition, Ar is preferably a substituted or unsubstituted heteroaromatic ring having 2 to 30 ring carbon atoms.

[0273] In addition, when h is an integer of 1 or 2, an organic compound having high sublimability can be provided.

[0274] In addition, Ar preferably has any one or more of an aromatic ring skeleton, a π-electron-deficient heteroaromatic ring skeleton, and a nitrogen-containing heteroaromatic skeleton. Specifically, it is preferably a substituent having a benzene skeleton, a naphthalene skeleton, an anthracene skeleton, a phenanthrene skeleton, a pyrene skeleton, a polyazole skeleton, a pyridine skeleton, a pyrimidine skeleton, a pyrazine skeleton, a diazine skeleton, a triazine skeleton, a quinoline skeleton, a quinazoline skeleton, a quinoxaline skeleton, a phenanthroline skeleton, or a dibenzoquinoxaline skeleton.

[0275] [Chemical Formula 40]

[0276] In the above general formulas (R1-1) and (R1-2), R 403 to R 406 Each independently represents hydrogen (including deuterium), m represents an integer from 0 to 4, n represents an integer from 1 to 5, and m+1≥n. When m or n is 2 or more, multiple R 403 to R 406 They may be the same as or different from each other. When m is 0, it is preferred that carbon (C) and nitrogen (N) are bonded to each other in the general formula (R1).

[0277] Furthermore, the organic compound represented by the above-mentioned general formula (R1) is preferably any one of the following general formulas (R2-1) to (R2-6).

[0278] [Chemical Formula 41]

[0279] In addition, R 411 to R 426 Each independently represents hydrogen (including deuterium), h represents an integer of 1 to 6, and Ar represents a substituted or unsubstituted heteroaromatic ring having 2 to 30 ring carbon atoms or a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring carbon atoms. In addition, Ar is preferably a substituted or unsubstituted heteroaromatic ring having 2 to 30 ring carbon atoms.

[0280] Note that in the above general formula (R1) and general formulae (R2-1) to (R2-6), the substituted or unsubstituted heteroaromatic ring having 2 to 30 ring carbon atoms or the aromatic hydrocarbon ring having 6 to 30 ring carbon atoms represented by Ar may specifically include a pyridine ring, a bipyridine ring, a pyrimidine ring, a bipyrimidine ring, a pyrazine ring, a bipyrazine ring, a triazine ring, a quinoline ring, an isoquinoline ring, a benzoquinoline ring, a phenanthroline ring, a quinoxaline ring, a benzoquinoxaline ring, a dibenzoquinoxaline ring, a nitrogen ring, a diaza ring, a carbazole ring, a benzocarbazole ring, and a dibenzocarbazole ring. , dibenzofuran ring, benzonaphthofuran ring, dinaphthofuran ring, dibenzothiophene ring, benzonaphthothiophene ring, dinaphthothiophene ring, benzofuran pyridine ring, benzofuran pyrimidine ring, benzothienopyridine ring, benzothienopyrimidine ring, naphthofuran pyridine ring, naphthofuran pyrimidine ring, naphthothienopyridine ring, naphthothienopyrimidine ring, acridine ring, xanthene ring, phenothiazine ring, phenoxazine ring, phenazine ring, triazole ring, oxazole ring, oxadiazole ring, thiazole ring, thiadiazole ring, imidazole ring, benzimidazole ring, pyrazole ring, pyrrole ring, etc. In the above general formula (R1) and general formulae (R2-1) to (R2-6), the substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring carbon atoms represented by Ar specifically includes a benzene ring, a naphthalene ring, a fluorene ring, a dimethylfluorene ring, a diphenylfluorene ring, a spirofluorene ring, an anthracene ring, a phenanthrene ring, a triphenylene ring, a pyrene ring, a tetracene ring, (chrysene) ring, benz[a]anthracene ring, etc. Particularly preferred is any one of the following structural formulas (Ar-401) to (Ar-427).

[0281] [Chemical Formula 42]

[0282] Note that the above-mentioned Ar includes nitrogen as a ring-forming element, and the Ar is preferably bonded to the skeleton represented in parentheses in the above-mentioned general formula (R1) via a bond through the nitrogen or a carbon adjacent to the nitrogen.

[0283] Specific examples of the organic compounds represented by the above-mentioned general formula (R1) and general formulae (R2-1) to (R2-6) include organic compounds represented by the following structural formulae (405) to (424).

[0284] [Chemical Formula 43]

[0285] Although Figure 1D Although a structure in which two organic compound layers 103 are stacked is shown, a stacked structure of three or more organic compound layers may be employed by providing a charge generation layer between different organic compound layers.

[0286] <<Substrate>> In addition, the light-emitting element of one embodiment of the present invention can be manufactured on a substrate made of glass, plastic, etc. As the order of stacking on the substrate, it can be stacked in sequence from the first electrode 101 side or from the second electrode 102 side.

[0287] In addition, as a substrate capable of forming a light-emitting element of one embodiment of the present invention, for example, glass, quartz, or plastic can be used. Alternatively, a flexible substrate can also be used. A flexible substrate is a substrate that can be bent, such as a plastic substrate made of polycarbonate or polyarylate. In addition, a thin film, an inorganic thin film formed by vapor deposition, etc. can be used. Note that other materials can be used as long as they serve as a support during the manufacturing process of the light-emitting element and the optical element. Alternatively, any material can be used as long as it has the function of protecting the light-emitting element and the optical element.

[0288] For example, in this specification, etc., various substrates can be used to form light-emitting elements. There is no particular limitation on the type of substrate. As examples of the substrate, for example, a semiconductor substrate (for example, a single crystal substrate or a silicon substrate), an SOI (Silicon On Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate with a stainless steel foil, a tungsten substrate, a substrate with a tungsten foil, a flexible substrate, a laminated film, a cellulose nanofiber (CNF) containing a fibrous material, paper or a substrate film can be used. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, soda-lime glass, etc. As flexible substrates, laminated films, substrate films, etc., the following examples can be given. For example, plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE) can be given. Alternatively, as an example, acrylic resins can be given. Alternatively, as an example, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride can be given. Alternatively, examples include resins such as polyamide, polyimide, aramid, or epoxy, inorganic vapor-deposited films, and paper.

[0289] Alternatively, a flexible substrate can be used as the substrate, and the light-emitting element can be formed directly on the flexible substrate. Alternatively, a release layer can be provided between the substrate and the light-emitting element. The release layer can be used when part or all of the light-emitting element is manufactured on the release layer, and then separated from the substrate and transferred to another substrate. In this case, the light-emitting element can also be transferred to a substrate with low heat resistance or a flexible substrate. Furthermore, as the release layer, for example, a laminated structure of an inorganic film such as a tungsten film and a silicon oxide film, or a structure in which a resin film such as a polyimide is formed on a substrate, can be used.

[0290] That is, a light-emitting element can be formed using one substrate and then transferred to another substrate. Examples of substrates to which the light-emitting element is transferred include, in addition to the aforementioned substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester), or regenerated fibers (acetate, cuprammonium, rayon, regenerated polyester), etc.), leather substrates, and rubber substrates. By using these substrates, it is possible to manufacture light-emitting elements that are not easily damaged, have high heat resistance, achieve lightweight properties, or achieve thinness.

[0291] Alternatively, a field effect transistor (FET) may be formed on the substrate, and a light emitting device may be fabricated on an electrode electrically connected to the FET. This allows fabrication of an active matrix display device in which the light emitting device is driven by the FET.

[0292] In this embodiment, one embodiment of the present invention is described. Furthermore, one embodiment of the present invention is described in other embodiments. However, one embodiment of the present invention is not limited to this. That is, various embodiments of the invention are described in this embodiment and other embodiments, and thus one embodiment of the present invention is not limited to a specific embodiment. For example, although an example in which one embodiment of the present invention is applied to a light-emitting element is described, one embodiment of the present invention is not limited to this example. For example, depending on circumstances, one embodiment of the present invention may not be applied to a light-emitting element. Furthermore, although one embodiment of the present invention describes an example including a first organic compound, a second organic compound, and a guest material capable of converting triplet excitation energy into light emission, wherein the LUMO energy level of the first organic compound is lower than the LUMO energy level of the second organic compound, and the HOMO energy level of the first organic compound is lower than the HOMO energy level of the second organic compound, one embodiment of the present invention is not limited to this example. In one embodiment of the present invention, depending on circumstances, for example, the LUMO energy level of the first organic compound may not be lower than the LUMO energy level of the second organic compound. Furthermore, the HOMO energy level of the first organic compound may not be lower than the HOMO energy level of the second organic compound. Furthermore, for example, an example in which the first organic compound and the second compound form an exciplex is shown in one embodiment of the present invention, but the present invention is not limited thereto. In one embodiment of the present invention, depending on circumstances, for example, the first organic compound and the second organic compound may not form an exciplex. Furthermore, although an example in which the LUMO energy level of the guest material is higher than the LUMO energy level of the first organic compound and the HOMO energy level of the guest material is lower than the HOMO energy level of the second organic compound is shown in one embodiment of the present invention, the present invention is not limited thereto. In one embodiment of the present invention, depending on circumstances, for example, the LUMO energy level of the guest material may not be higher than the LUMO energy level of the first organic compound. Furthermore, the HOMO energy level of the guest material may not be lower than the HOMO energy level of the second organic compound.

[0293] The structure described in this embodiment can be used in combination with the structures described in other embodiment modes as appropriate.

[0294] Implementation 3 like Figure 2A and Figure 2B As shown in FIG, a light-emitting device is formed by forming a plurality of light-emitting elements over the insulating layer 175. In this embodiment, a light-emitting device according to one embodiment of the present invention is described in detail.

[0295] The light emitting device 1000 includes a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0296] In this specification, for example, the term "subpixel 110" may be used to describe common features among subpixels 110R, 110G, and 110B. Furthermore, for components identified by letters, reference numerals may be used without the letters to describe common features among the components.

[0297] Sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. Thus, an image can be displayed on the pixel portion 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are used as an example for explanation, but the present invention is not limited to this structure. That is, sub-pixels of other colors can also be combined. For example, the number of sub-pixels is not limited to three, but can be four or more. As four sub-pixels, for example, there can be: sub-pixels of four colors, R, G, B, and white (W); sub-pixels of four colors, R, G, B, and yellow (Y); and sub-pixels of four colors, R, G, B, and infrared light (IR); and so on.

[0298] In this specification and the like, the row direction may be referred to as the X direction and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly intersect.

[0299] exist Figure 2A In the example shown, sub-pixels of different colors are arranged in the X direction, and sub-pixels of the same color are arranged in the Y direction. Note that sub-pixels of different colors may also be arranged in the Y direction, and sub-pixels of the same color may be arranged in the X direction.

[0300] The connection portion 140 and the region 141 may be provided outside the pixel portion 177. For example, the region 141 is preferably provided between the pixel portion 177 and the connection portion 140. The organic compound layer 103 is provided in the region 141. The connection portion 140 is provided with the conductive layer 151C.

[0301] exist Figure 2A In the example shown, the region 141 and the connection portion 140 are located on the right side of the pixel portion 177. However, there is no particular limitation on the positions of the region 141 and the connection portion 140. Alternatively, there may be one or more regions 141 and the connection portion 140.

[0302] Figure 2B It is along Figure 2A An example of a cross-sectional view along the dotted line A1-A2 in FIG. Figure 2BAs shown, light emitting device 1000 includes an insulating layer 171, a conductive layer 172 on insulating layer 171, an insulating layer 173 on insulating layer 171 and conductive layer 172, an insulating layer 174 on insulating layer 173, and an insulating layer 175 on insulating layer 174. Insulating layer 171 is preferably disposed on a substrate (not shown). Insulating layer 175, insulating layer 174, and insulating layer 173 are provided with openings that reach conductive layer 172, and plugs 176 are provided to fit within these openings.

[0303] In pixel portion 177, light emitting device 130 is provided on insulating layer 175 and plug 176. Substrate 120 is bonded to light emitting device 130 via resin layer 122. Alternatively, inorganic insulating layer 125 and insulating layer 127 on inorganic insulating layer 125 may be provided between adjacent light emitting devices 130.

[0304] Figure 2B Although cross-sections of the plurality of inorganic insulating layers 125 and the plurality of insulating layers 127 are shown, the inorganic insulating layers 125 and 127 are preferably formed as a continuous layer when viewed from above the light-emitting device 1000. In other words, the inorganic insulating layers 125 and 127 are preferably insulating layers having openings above the first electrode.

[0305] Figure 2B Light-emitting devices 130R, 130G, and 130B are shown as light-emitting devices 130. Light-emitting devices 130R, 130G, and 130B emit light of different colors. For example, light-emitting device 130R may emit red light, light-emitting device 130G may emit green light, and light-emitting device 130B may emit blue light. Light-emitting devices 130R, 130G, and 130B may also emit other visible light or infrared light.

[0306] The organic compound layer 103 includes at least a light-emitting layer and may include other functional layers (such as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer). Alternatively, the organic compound layer 103 and the common layer 104 may be combined to form the functional layers (such as a hole injection layer, a hole transport layer, a hole blocking layer, a light-emitting layer, an electron blocking layer, an electron transport layer, and an electron injection layer) included in the EL layer that emits light.

[0307] The light-emitting device of one embodiment of the present invention may have a top emission structure (top emission) that emits light in a direction opposite to a substrate on which the light-emitting device is formed. Alternatively, the light-emitting device of one embodiment of the present invention may have a bottom emission structure (bottom emission).

[0308] Here, the light-emitting device 130 (light-emitting device 130R, light-emitting device 130G and light-emitting device 130B) has the structure shown in embodiment 1, including a first electrode (pixel electrode) composed of a conductive layer 151 (conductive layer 151R, conductive layer 151G, conductive layer 151B) and a conductive layer 152 (conductive layer 152R, conductive layer 152G, conductive layer 152B), an organic compound layer 103 (organic compound layer 103B, organic compound layer 103G and organic compound layer 103B) on the first electrode, a common layer 104 on the organic compound layer 103, a second electrode (common electrode) 102 on the common layer 104 and a cover layer 131.

[0309] Note that the common layer 104 is not necessarily required. Providing the common layer 104 can reduce damage to the organic compound layer 103 caused by subsequent steps. Furthermore, when the common layer 104 is provided, the common layer 104 can also function as an electron injection layer. When the common layer 104 functions as an electron injection layer, the stacked structure of the organic compound layer 103 and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 1.

[0310] The light emitting device includes a pixel electrode and a common electrode, one of which is used as an anode and the other as a cathode. The following description assumes that the pixel electrode is used as an anode and the common electrode is used as a cathode, unless otherwise specified.

[0311] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each formed into an island shape, either individually or independently for each luminescent color. By forming the organic compound layer 103 into an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-definition light-emitting device. This reduces crosstalk and enables a light-emitting device with extremely high contrast. In particular, a light-emitting device with high current efficiency at low brightness can be realized.

[0312] The organic compound layer 103 can also be provided so as to cover the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the light-emitting device 1000 compared to a structure in which the end of the organic compound layer 103 is located inward of the end of the pixel electrode. Furthermore, by covering the side surfaces of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, contact between the pixel electrode and the second electrode 102 can be suppressed, thereby preventing short circuits in the light-emitting device 130. Furthermore, the distance between the light-emitting region of the organic compound layer 103 (i.e., the region overlapping with the pixel electrode) and the end of the organic compound layer 103 can be increased. Furthermore, because the end of the organic compound layer 103 may be damaged during processing, by using a region away from the end of the organic compound layer 103 as the light-emitting region, the reliability of the light-emitting device 130 can be improved.

[0313] In addition, in the light-emitting device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device may also have a stacked structure. Figure 2B In the example shown, the first electrode of the light emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152 .

[0314] For example, when the light-emitting device 1000 has a top emission structure, in the pixel electrode of the light-emitting device 130, it is preferred that the conductive layer 151 is a layer with high visible light reflectivity, and the conductive layer 152 is a layer with visible light transmittance and a large work function. The higher the visible light reflectivity of the pixel electrode, the higher the extraction efficiency of the light emitted by the organic compound layer 103 can be. In addition, when the pixel electrode is used as an anode, the greater the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Therefore, by making the pixel electrode of the light-emitting device 130 have a stacked structure of the conductive layer 151 with high visible light reflectivity and the conductive layer 152 with a large work function, the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.

[0315] Specifically, the visible light reflectivity of the conductive layer 151 is, for example, 40% to 100%, preferably 70% to 100%. When the conductive layer 152 is a visible light-transmitting electrode, its visible light transmittance is, for example, preferably 40% or more.

[0316] Furthermore, when removing films deposited after forming a pixel electrode having a stacked structure using wet etching or other methods, the etching solution may penetrate into the structure including the pixel electrode. When the seeping solution contacts the pixel electrode, galvanic corrosion may occur between the multiple layers constituting the pixel electrode, causing degradation of the pixel electrode.

[0317] For this reason, conductive layer 152 is preferably formed so as to cover the top and side surfaces of conductive layer 151. Covering conductive layer 151 with conductive layer 152 prevents the impregnated chemical solution from contacting conductive layer 151, thereby suppressing galvanic corrosion in the pixel electrode. Consequently, light-emitting device 1000 can be manufactured using a method with a high yield, resulting in an inexpensive light-emitting device. Furthermore, defects in light-emitting device 1000 can be suppressed, resulting in a highly reliable light-emitting device.

[0318] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys obtained by appropriately combining these metals, can be used.

[0319] The conductive layer 152 can be made of an oxide containing one or more selected from the group consisting of indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, preferably used are conductive oxides containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. Indium tin oxide containing silicon has a particularly large work function, for example, 4.0 eV or greater, and is therefore suitable for use as the conductive layer 152.

[0320] Alternatively, conductive layer 151 and conductive layer 152 may each have a stacked-layer structure including a plurality of layers of different materials. In this case, conductive layer 151 may include a layer using a material that can be used for conductive layer 152, such as a conductive oxide, and conductive layer 152 may include a layer using a material that can be used for conductive layer 151, such as a metal. For example, when conductive layer 151 has a stacked-layer structure with two or more layers, the layer in contact with conductive layer 152 may be a layer containing the same material as the layer in conductive layer 152 that is in contact with conductive layer 151.

[0321] The ends of the conductive layer 151 preferably have a tapered shape. Specifically, the ends of the conductive layer 151 preferably have a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surfaces of the conductive layer 151 also has a tapered shape. The tapered ends of the conductive layer 152 can improve coverage with the organic compound layer 103 provided along the side surfaces of the conductive layer 152.

[0322] When the conductive layer 151 or the conductive layer 152 has a stacked structure, it is preferable that at least one of the stacked layers has a tapered side surface. In addition, in the stacked structure constituting each conductive layer, each layer may have a different tapered shape.

[0323] Figure 3A This is a diagram when the conductive layer 151 has a stacked structure of multiple layers containing different materials. Figure 3A As shown, the conductive layer 151 includes a conductive layer 151_1, a conductive layer 151_2 on the conductive layer 151_1, and a conductive layer 151_3 on the conductive layer 151_2. Figure 3A The conductive layer 151 shown has a three-layer stacked structure. In this case, when the conductive layer 151 has a multi-layer stacked structure, at least one of the layers constituting the conductive layer 151 may have a visible light reflectivity higher than that of the conductive layer 152 .

[0324] exist Figure 3A In the example shown, conductive layer 151_2 is sandwiched between conductive layer 151_1 and conductive layer 151_3. Conductive layers 151_1 and 151_3 are preferably made of materials that are less susceptible to degradation than conductive layer 151_2. For example, conductive layer 151_1 can be made of a material that is less susceptible to migration due to contact with insulating layer 175 than conductive layer 151_2. Alternatively, conductive layer 151_3 can be made of a material that is less susceptible to oxidation than conductive layer 151_2 and whose oxide has a lower resistivity than the oxide of the material used for conductive layer 151_2.

[0325] As described above, by adopting a structure where conductive layer 151_2 is sandwiched between conductive layer 151_1 and conductive layer 151_3, the range of materials available for conductive layer 151_2 can be expanded. This allows, for example, conductive layer 151_2 to have a higher visible light reflectivity than at least one of conductive layer 151_1 and conductive layer 151_3. For example, aluminum can be used for conductive layer 151_2. Alternatively, an aluminum-containing alloy can be used for conductive layer 151_2. Furthermore, titanium can be used for conductive layer 151_1. While titanium has a lower visible light reflectivity than aluminum, it is less likely to migrate even when in contact with insulating layer 175 than aluminum. Furthermore, titanium can be used for conductive layer 151_3. While titanium has a lower visible light reflectivity than aluminum, it is less susceptible to oxidation than aluminum, and its oxide has a lower resistivity than aluminum oxide.

[0326] Alternatively, silver or a silver-containing alloy may be used as the conductive layer 151_3. Silver has a higher visible light reflectivity than titanium. Furthermore, silver is less susceptible to oxidation than aluminum, and the resistivity of silver oxide is lower than that of aluminum oxide. Therefore, when silver or a silver-containing alloy is used as the conductive layer 151_3, the visible light reflectivity of the conductive layer 151 can be appropriately increased while suppressing the increase in resistance of the pixel electrode due to oxidation of the conductive layer 151_2. Here, as an example, an alloy containing silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC) can be used. Furthermore, when silver or a silver-containing alloy is used as the conductive layer 151_3 and aluminum is used as the conductive layer 151_2, the visible light reflectivity of the conductive layer 151_3 can be increased compared to the visible light reflectivity of the conductive layer 151_2. Here, silver or a silver-containing alloy may also be used as the conductive layer 151_2. Alternatively, silver or a silver-containing alloy may also be used as the conductive layer 151_1.

[0327] On the other hand, a film made of titanium has better etching processability than a film made of silver. Therefore, by using titanium as the conductive layer 151_3, the conductive layer 151_3 can be easily formed. In addition, a film made of aluminum also has better etching processability than a film made of silver.

[0328] By making the conductive layer 151 have a multi-layer stacked structure, the characteristics of the light-emitting device can be improved. For example, the light-emitting device 1000 can have high light extraction efficiency and high reliability.

[0329] Here, when the light emitting device 130 adopts a microcavity structure, by using silver or an alloy containing silver, which is a material with high visible light reflectivity, as the conductive layer 151_3, the light extraction efficiency of the light emitting apparatus 1000 can be appropriately improved.

[0330] In addition, if Figure 3A As shown, depending on the material selection or processing method of the conductive layer 151, the side surface of the conductive layer 151_2 may be located inside the side surfaces of the conductive layers 151_1 and 151_3, forming a protrusion. This reduces the coverage of the conductive layer 152 on the conductive layer 151, and may cause the conductive layer 152 to be disconnected.

[0331] In view of this, it is preferred to Figure 3A Insulating layer 156 is provided in this manner. Figure 3A Insulating layer 156 is provided on conductive layer 151_1 to have a region overlapping with the side surface of conductive layer 151_2. This prevents disconnection or thinning of conductive layer 152 due to the protrusion, thereby preventing connection failure and increase in driving voltage.

[0332] Note that although Figure 3AAlthough the entire side surface of the conductive layer 151_2 is covered by the insulating layer 156, part of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156. Similarly, in the pixel electrode having the structure shown below, part of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156.

[0333] In addition, if Figure 3A As shown, insulating layer 156 preferably has a curved surface. Thus, for example, the occurrence of disconnection in conductive layer 152 covering insulating layer 156 can be suppressed compared to a case where the side surface of insulating layer 156 is perpendicular (parallel to the Z direction). Furthermore, when the side surface of insulating layer 156 has a tapered shape, specifically a tapered shape with a taper angle of less than 90°, for example, the occurrence of disconnection in conductive layer 152 covering insulating layer 156 can be suppressed compared to a case where the side surface of insulating layer 156 is perpendicular. Thus, light-emitting device 1000 can be manufactured using a method with a high yield. Furthermore, the occurrence of defects is suppressed, making light-emitting device 1000 a highly reliable light-emitting device.

[0334] Note that one embodiment of the present invention is not limited to this. For example, Figures 3B to 3D Other structures of the first electrode 101 are shown.

[0335] Figure 3B The structure is as follows: Figures 1A to 1E In the first electrode 101 , the insulating layer 156 covers the side surfaces of the conductive layer 151_1 , the conductive layer 151_2 , and the conductive layer 151_3 in addition to the side surface of the conductive layer 151_2 .

[0336] Figure 3C is Figures 1A to 1E The insulating layer 156 is not provided in the first electrode 101.

[0337] Figure 3D The structure is as follows: Figures 1A to 1E In the first electrode 101, the conductive layer 151 does not have a stacked-layer structure and the conductive layer 152 has a stacked-layer structure.

[0338] Conductive layer 152_1 has higher adhesion to conductive layer 152_2 than, for example, insulating layer 175. For example, conductive layer 152_1 can be made of an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, preferably, conductive oxides containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon are used. This can suppress film peeling of conductive layer 152_2. Furthermore, conductive layer 152_2 can be prevented from contacting insulating layer 175.

[0339] The conductive layer 152_2 is a layer having a higher visible light reflectivity (for example, reflectivity for light of a specified wavelength within a range of 400 nm to less than 750 nm) than the conductive layers 151, 152_1, and 152_3. The visible light reflectivity of the conductive layer 152_2 can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. In addition, for example, silver or an alloy containing silver can be used as the conductive layer 152_2. As an example of an alloy containing silver, an alloy of silver, palladium, and copper (APC) can be cited. In this way, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency. Note that a metal other than silver can also be used as the conductive layer 152_2.

[0340] When the conductive layers 151 and 152 are used as anodes, the conductive layer 152_3 is preferably a layer having a large work function. For example, the conductive layer 152_3 has a larger work function than the conductive layer 152_2. For example, the conductive layer 152_3 can use the same material as that used for the conductive layer 152_1. For example, the same material can be used for both the conductive layer 152_1 and the conductive layer 152_3.

[0341] Note that when the conductive layer 151 and the conductive layer 152 are used as cathodes, the conductive layer 152_3 is preferably a layer with a small work function. For example, the conductive layer 152_3 is a layer with a smaller work function than the conductive layer 152_2.

[0342] In addition, the conductive layer 152_3 is preferably a layer with high visible light transmittance (for example, transmittance for light of a specified wavelength in the range of 400 nm to less than 750 nm). For example, the visible light transmittance of the conductive layer 152_3 is preferably higher than the visible light transmittance of the conductive layer 151 and the conductive layer 152_2. For example, the visible light transmittance of the conductive layer 152_3 can be greater than 60% and less than 100%, preferably greater than 70% and less than 100%, and more preferably greater than 80% and less than 100%. As a result, the light emitted by the organic compound layer 103 and absorbed by the conductive layer 152_3 can be reduced. In addition, as described above, the conductive layer 152_2 under the conductive layer 152_3 can be a layer with high visible light reflectivity. Therefore, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency.

[0343] Next, refer to Figures 4A to 10C Description Figure 2A and Figure 2B An example of a method for manufacturing the light emitting device 1000 having the structure shown.

[0344] [Manufacturing method example 1] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute light-emitting devices can be formed using methods such as sputtering, chemical vapor deposition, vacuum evaporation, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma-enhanced chemical vapor deposition (PECVD) and thermal CVD. Furthermore, one thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0345] In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the light-emitting device can be formed using wet deposition methods such as spin coating, dipping, spraying, inkjet, dispenser, screen printing, offset printing, doctor knife, slit coating, roller coating, curtain coating or doctor knife coating.

[0346] In particular, when manufacturing a light-emitting device, a vacuum process such as an evaporation method and a solution process such as a spin coating method and an inkjet method can be utilized. As the evaporation method, physical evaporation methods such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, and vacuum evaporation (PVD (Physical Vapor Deposition) method) and chemical vapor deposition (CVD method) can be cited. In particular, the functional layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer and electron injection layer, etc.) included in the organic compound layer can be formed by methods such as evaporation (vacuum evaporation method, etc.), coating (dip coating method, dye coating method, rod coating method, spin coating method, spray coating method), printing method (inkjet method, screen printing (porcelain printing) method, offset printing (lithography) method, flexographic printing (letterpress printing) method, gravure printing method or microcontact printing method, etc.)

[0347] Furthermore, when processing thin films constituting the light-emitting device, photolithography can be used, for example. Alternatively, nanoimprint lithography, sandblasting, lift-off, and the like can be used. Furthermore, island-shaped thin films can be directly formed by deposition using a shadow mask such as a metal mask.

[0348] Photolithography typically involves two methods. One involves forming a resist mask on the film to be processed, processing the film by, for example, etching, and then removing the resist mask. The other involves depositing a photosensitive film, then exposing and developing it to the desired shape.

[0349] For etching of the thin film, dry etching, wet etching, sand blasting, or the like can be used.

[0350] First, if Figure 4A As shown, an insulating layer 171 is formed on a substrate (not shown). Next, conductive layers 172 and 179 are formed on insulating layer 171, and insulating layer 173 is formed on insulating layer 171 to cover conductive layers 172 and 179. Next, insulating layer 174 is formed on insulating layer 173, and insulating layer 175 is formed on insulating layer 174.

[0351] As the substrate, a substrate having heat resistance at least sufficient to withstand the subsequent heat treatment can be used. When an insulating substrate is used as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate can be used. Alternatively, a semiconductor substrate such as a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium, or an SOI substrate can be used.

[0352] Then, if Figure 4AAs shown in FIG. 1 , openings reaching the conductive layer 172 are formed in the insulating layers 175, 174, and 173. Next, plugs 176 are formed so as to fit into the openings.

[0353] Then, if Figure 4A As shown, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, sputtering or vacuum deposition. A metal material can be used as the conductive film 151f.

[0354] Then, if Figure 4A As shown in FIG. 1 , for example, a resist mask 191 is formed on the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing the material to light, and developing the material.

[0355] Then, if Figure 4B As shown, for example, the conductive film 151f is removed from the region that does not overlap with the resist mask 191 by etching, specifically, dry etching. Note that if the conductive film 151f includes a layer made of a conductive oxide such as indium tin oxide, this layer can also be removed by wet etching. Thus, the conductive layer 151 is formed. Note that, for example, when a portion of the conductive film 151f is removed by dry etching, a recessed portion (also referred to as a depression) may be formed in the region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0356] Then, if Figure 4C As shown, the resist mask 191 is removed. The resist mask 191 can be removed by, for example, ashing using oxygen plasma. Alternatively, oxygen gas and CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a Group 18 element such as He can be used. Alternatively, the resist mask 191 can be removed by wet etching.

[0357] Then, if Figure 4D As shown, insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed over conductive layers 151R, 151G, 151B, and 151C, and insulating layer 175. Insulating film 156f can be formed by, for example, CVD, ALD, sputtering, or vacuum evaporation.

[0358] The insulating film 156f can be made of an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used as the insulating film 156f. For example, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film containing silicon can be used as the insulating film 156f. For example, silicon oxynitride can be used as the insulating film 156f.

[0359] Then, if Figure 4E As shown, insulating film 156f is processed to form insulating layer 156R, insulating layer 156G, insulating layer 156B, and insulating layer 156C. For example, insulating layer 156 can be formed by etching the top surface of insulating film 156f substantially uniformly. This process of planarizing by uniform etching is also called etch-back. Alternatively, insulating layer 156 can be formed using photolithography.

[0360] Then, if Figure 5A As shown, a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, is formed on the conductive layers 151R, 151G, 151B, and 151C, the insulating layers 156R, 156G, 156B, and 156C, and the insulating layer 175. Specifically, the conductive film 152f is formed to cover the conductive layers 151R, 151G, 151B, and 151C, and the insulating layers 156R, 156G, 156B, and 156C.

[0361] The conductive film 152f can be formed, for example, by sputtering or vacuum evaporation. Alternatively, the conductive film 152f can be formed by ALD. Furthermore, a conductive oxide can be used as the conductive film 152f. Alternatively, the conductive film 152f can have a stacked structure comprising a film made of a metal material and a film made of a conductive oxide thereon. For example, the conductive film 152f can have a stacked structure comprising a film made of titanium, silver, or an alloy containing silver and a film made of a conductive oxide thereon.

[0362] Then, if Figure 5B As shown, the conductive film 152f is processed using, for example, photolithography to form the conductive layers 152R, 152G, 152B, and 152C. Specifically, after forming a resist mask, a portion of the conductive film 152f is removed by etching. For example, the conductive film 152f can be removed by wet etching. Note that dry etching can also be used to remove the conductive film 152f. Thus, a pixel electrode including the conductive layers 151 and 152 is formed.

[0363] Next, the conductive layer 152 is preferably subjected to a hydrophobic treatment. The hydrophobic treatment can change the surface being treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface being treated. The hydrophobic treatment of the conductive layer 152 can improve the adhesion between the conductive layer 152 and the organic compound layer 103 to be formed in a subsequent step, thereby suppressing film peeling. Note that the hydrophobic treatment is not necessarily required.

[0364] Then, if Figure 5C As shown in FIG. 1 , an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed over the conductive layer 152B, the conductive layer 152G, the conductive layer 152R, and the insulating layer 175 .

[0365] In the present invention, the organic compound film 103Bf includes a plurality of organic compound layers having at least one light-emitting layer. For details, refer to the structure of the light-emitting device 130 described in Embodiment 1. Alternatively, a structure may be employed in which a plurality of organic compound layers having at least one light-emitting layer are stacked with an intermediate layer interposed therebetween.

[0366] like Figure 5C As shown, the organic compound film 103Bf is not formed on the conductive layer 152C. For example, by using a mask for defining the deposition range (also referred to as an area mask or a coarse metal mask to distinguish it from a fine metal mask), the organic compound film 103Bf can be deposited only in the desired area. By adopting a deposition process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured using a relatively simple process.

[0367] The organic compound film 103Bf can be formed by, for example, vapor deposition, specifically, vacuum deposition, or by transfer, printing, inkjet, or coating.

[0368] Then, if Figure 5D As shown, a sacrificial film 158Bf, which will later become a sacrificial layer 158B, and a mask film 159Bf, which will later become a mask layer 159B, are formed in this order on the organic compound film 103Bf.

[0369] The sacrificial film 158Bf and the mask film 159Bf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition, or by the aforementioned wet deposition method.

[0370] Furthermore, the sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Bf. The substrate temperature during formation of the sacrificial film 158Bf and the mask film 159Bf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, further preferably 100°C or lower, and even more preferably 80°C or lower.

[0371] Note that in this embodiment, an example is shown in which the mask film has a two-layer structure of the sacrificial film 158Bf and the mask film 159Bf. However, the mask film may have a single-layer structure or a stacked-layer structure of three or more layers.

[0372] By providing a sacrificial layer on the organic compound film 103Bf, damage to the organic compound film 103Bf during the manufacturing process of the light-emitting device can be reduced, thereby improving the reliability of the light-emitting device.

[0373] The sacrificial film 158Bf is made of a film having high resistance to the processing conditions of the organic compound film 103Bf, specifically, a film having a large etching selectivity with the organic compound film 103Bf. The mask film 159Bf is made of a film having a large etching selectivity with the sacrificial film 158Bf.

[0374] The sacrificial film 158Bf and the mask film 159Bf are preferably films that can be removed by wet etching. Compared to dry etching, wet etching can reduce damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf.

[0375] When wet etching is used, it is preferred to use a water-soluble solution because it is not easy to dissolve organic compounds. In particular, an acidic solution can be used. As the acidic solution, a solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed solution containing two or more acids (also called mixed acid) can be used. In addition, an alkaline solution can also be used. As the alkaline solution, a quaternary ammonium such as tetramethylammonium hydroxide or tetramethyl hydroxide can be used.

[0376] As the sacrificial film 158Bf and the mask film 159Bf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used.

[0377] Furthermore, by using a film containing a material having ultraviolet light-shielding properties as the sacrificial film 158Bf and the mask film 159Bf, it is possible to prevent ultraviolet light from reaching the organic compound layer during, for example, the exposure process. This prevents ultraviolet light from damaging the organic compound layer, thereby improving the reliability of the light-emitting device.

[0378] Note that a film containing a material having ultraviolet light-shielding properties also exhibits the same effect when used as a material for the inorganic insulating film 125f described later.

[0379] The sacrificial film 158Bf and the mask film 159Bf can each be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. In particular, a low-melting-point material such as aluminum or silver is preferably used.

[0380] In addition, as the sacrificial film 158Bf and the mask film 159Bf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide) or indium tin oxide containing silicon can be used respectively.

[0381] Note that element M (M is one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of gallium.

[0382] For example, a semiconductor material such as silicon or germanium is used as the sacrificial film 158Bf and the mask film 159Bf, which is highly compatible with the semiconductor manufacturing process and is therefore preferred. Alternatively, an oxide or nitride of the above-mentioned semiconductor materials can be used. Alternatively, a non-metallic material such as carbon or a compound thereof can be used. In addition, a metal such as titanium, tantalum, tungsten, chromium, or aluminum, or an alloy containing one or more of these, can be used. In addition, an oxide of the above-mentioned metals such as titanium oxide or chromium oxide, or a nitride such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0383] In addition, various inorganic insulating films can be used as the sacrificial film 158Bf and the mask film 159Bf. In particular, the oxide insulating film has a higher adhesion to the organic compound film 103Bf than the nitride insulating film, so it is preferred. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, or silicon oxide can be used for the sacrificial film 158Bf and the mask film 159Bf, respectively. As the sacrificial film 158Bf and the mask film 159Bf, for example, an aluminum oxide film can be formed using the ALD method. By using the ALD method, damage to the substrate (especially the organic compound layer) can be reduced, so it is preferred.

[0384] An organic material may be used as one or both of the sacrificial film 158Bf and the mask film 159Bf. For example, an organic material that is soluble in a solvent that is chemically stable to at least the film located at the top of the organic compound layer 103Bf may be used. In particular, a material that is soluble in water or alcohol may be suitably used. When depositing the above-mentioned material, it is preferred that the material be applied by the above-mentioned wet deposition method in a state where the material is dissolved in a solvent such as water or alcohol, and then a heat treatment is performed to evaporate the solvent. In this case, the heat treatment is preferably performed in a reduced pressure atmosphere, thereby removing the solvent at a low temperature and in a short time, thereby reducing thermal damage to the organic compound film 103Bf.

[0385] The sacrificial film 158Bf and the mask film 159Bf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluororesin such as perfluoropolymer.

[0386] For example, an organic film (e.g., a PVA film) formed using any of the evaporation method and the above-mentioned wet deposition method can be used as the sacrificial film 158Bf, and an inorganic film (e.g., a silicon nitride film) formed using the sputtering method can be used as the mask film 159Bf.

[0387] Then, if Figure 5D As shown in FIG. 1 , a resist mask 190B is formed on the mask film 159Bf. The resist mask 190B can be formed by applying a photosensitive resin (photoresist), exposing the photoresist, and developing the photoresist.

[0388] The resist mask 190B may use a positive resist material or a negative resist material.

[0389] The resist mask 190B is provided at a position overlapping with the conductive layer 152B. The resist mask 190B is preferably also provided at a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the light emitting device. Note that the resist mask 190B may not be provided on the conductive layer 152C. Figure 5C As shown in the cross-sectional view taken along B1-B2 in FIG. 1 , the resist mask 190B is preferably provided so as to cover from the end of the organic compound film 103Bf to the end of the conductive layer 152C (the end on the organic compound film 103Bf side).

[0390] Then, if Figure 5EAs shown, a portion of mask film 159Bf is removed using resist mask 190B to form mask layer 159B. Mask layer 159B remains on conductive layer 152B and conductive layer 152C. Resist mask 190B is then removed. Next, mask layer 159B is used as a mask (also referred to as a hard mask) to remove a portion of sacrificial film 158Bf, thereby forming sacrificial layer 158B.

[0391] The sacrificial film 158Bf and the mask film 159Bf can be processed by wet etching or dry etching. The sacrificial film 158Bf and the mask film 159Bf are preferably processed by wet etching.

[0392] By using the wet etching method, damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to the case of using the dry etching method. When using the wet etching method, for example, a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof is preferably used.

[0393] Since the organic compound film 103Bf is not exposed when processing the mask film 159Bf, a wider range of processing methods can be selected compared to processing the sacrificial film 158Bf. Specifically, when processing the mask film 159Bf, even when using an oxygen-containing gas as the etching gas, degradation of the organic compound film 103Bf can be suppressed.

[0394] When wet etching is used, an acidic solution is particularly preferably used. As the acidic solution, a solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed solution of two or more acids (also called mixed acid) is preferably used.

[0395] Furthermore, when dry etching is used to process the sacrificial film 158Bf, degradation of the organic compound film 103Bf can be suppressed by not using an oxygen-containing gas as the etching gas. When dry etching is used, for example, a gas containing CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a Group 18 element such as He is preferably used as the etching gas.

[0396] Resist mask 190B can be removed using the same method as resist mask 191. In this case, sacrificial film 158Bf is located at the outermost surface, and organic compound film 103Bf is not exposed. This prevents damage to organic compound film 103Bf during the removal process of resist mask 190B. Furthermore, the range of methods available for removing resist mask 190B can be expanded.

[0397] Then, if Figure 5EAs shown, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the organic compound layer 103B is formed by removing a portion of the organic compound film 103Bf using the mask layer 159B and the sacrificial layer 158B as a hard mask.

[0398] Therefore, if Figure 5E As shown, the stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the conductive layer 152G and the conductive layer 152R are exposed.

[0399] The organic compound film 103Bf can be processed using either dry etching or wet etching. For example, when dry etching is used, an etching gas containing oxygen can be used. Oxygen-containing etching gas can increase the etching rate. Therefore, etching can be performed under low power conditions while maintaining a sufficient etching rate. This minimizes damage to the organic compound film 103Bf and reduces defects such as adhesion of reaction products generated during etching.

[0400] Alternatively, an etching gas that does not contain oxygen may be used. For example, by using an etching gas that does not contain oxygen, degradation of the organic compound film 103Bf can be suppressed.

[0401] As described above, in one embodiment of the present invention, a resist mask 190B is formed on the mask film 159Bf and a portion of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. Subsequently, the organic compound layer 103B is formed by using the mask layer 159B as a mask to remove a portion of the organic compound film 103Bf. Therefore, it can be said that the organic compound layer 103B is formed by processing the organic compound film 103Bf using photolithography. Alternatively, a portion of the organic compound film 103Bf may be removed using the resist mask 190B. The resist mask 190B may then be removed.

[0402] Here, the conductive layer 152G may be subjected to a hydrophobic treatment as needed. During processing of the organic compound film 103Bf, for example, the surface of the conductive layer 152G may become hydrophilic. By performing a hydrophobic treatment on the conductive layer 152G, for example, the adhesion between the conductive layer 152G and a layer to be formed in a subsequent step (here, the organic compound layer 103G) can be improved, thereby suppressing film peeling.

[0403] Then, if Figure 6A As shown in FIG. 1 , an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed over the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175 .

[0404] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Bf. Furthermore, the organic compound film 103Gf can have the same structure as that of the organic compound film 103Bf.

[0405] Then, if Figure 6B As shown, a sacrificial film 158Gf, which will later become the sacrificial layer 158G, and a mask film 159Gf, which will later become the mask layer 159G, are sequentially formed on the organic compound film 103Gf and the mask layer 159B. Then, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those that can be used for the sacrificial film 158Bf and the mask film 159Bf. The materials and formation methods of the resist mask 190G are the same as those that can be used for the resist mask 190B.

[0406] The resist mask 190G is provided at a position overlapping with the conductive layer 152G.

[0407] Then, if Figure 6C As shown, a portion of the mask film 159Gf is removed using a resist mask 190G to form a mask layer 159G. Mask layer 159G remains on the conductive layer 152G. Then, resist mask 190G is removed. Next, mask layer 159G is used as a mask to remove a portion of the sacrificial film 158Gf to form sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form an organic compound layer 103G. For example, mask layer 159G and sacrificial layer 158G are used as hard masks to remove a portion of the organic compound film 103Gf to form an organic compound layer 103G.

[0408] Therefore, if Figure 6C As shown, the stacked structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. In addition, the mask layer 159B and the conductive layer 152R are exposed.

[0409] Alternatively, for example, the conductive layer 152R may be subjected to a hydrophobic treatment.

[0410] Then, if Figure 7A As shown in FIG. 1 , an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed over the conductive layer 152R, the mask layer 159G, the mask layer 159B, and the insulating layer 175 .

[0411] The organic compound film 103Rf can be formed by the same method as that used to form the organic compound film 103Gf. Furthermore, the organic compound film 103Rf can have the same structure as that of the organic compound film 103Gf.

[0412] Then, if Figure 7B and Figure 7C As shown, a sacrificial layer 158R is formed from the sacrificial film 158Rf, a mask layer 159R is formed from the mask film 159Rf, and an organic compound layer 103R is formed from the organic compound film 103Rf using a resist mask 190R. The sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R can be formed by referring to the description of the organic compound layer 103G.

[0413] Note that the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R are preferably perpendicular or substantially perpendicular to the surface on which they are formed. For example, the angle formed between the surface on which they are formed and these side surfaces is preferably not less than 60 degrees and not more than 90 degrees.

[0414] As described above, the distance between two adjacent organic compound layers among the organic compound layers 103B, 103G, and 103R formed using photolithography can be reduced to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. For example, the distance can be determined based on the distance between the opposing ends of the two adjacent organic compound layers among the organic compound layers 103B, 103G, and 103R. By reducing the distance between the island-shaped organic compound layers in this manner, a light-emitting device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can be reduced, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Furthermore, the distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0415] Then, if Figure 8A As shown, mask layer 159B, mask layer 159G, and mask layer 159R are removed.

[0416] Note that although this embodiment describes the case where the mask layers 159B, 159G, and 159R are removed, they do not need to be removed. For example, when the mask layers 159B, 159G, and 159R contain the aforementioned material having ultraviolet light-shielding properties, the organic compound layer can be protected from light (including illumination light) by proceeding to the next step without removing the mask layers.

[0417] The mask layer removal step can use the same method as the mask film processing step. In particular, wet etching can reduce damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R during mask layer removal compared to dry etching.

[0418] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of the alcohol include ethanol, methanol, isopropyl alcohol (IPA), and glycerin.

[0419] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, as well as water adsorbed on the surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. For example, heat treatment may be performed in an inert atmosphere or a reduced-pressure atmosphere. Heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. Using a reduced-pressure atmosphere is preferred because it allows drying at a lower temperature.

[0420] Then, if Figure 8B As shown, an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.

[0421] As described later, an insulating film that will become an insulating layer 127 later is formed in a manner that contacts the top surface of the inorganic insulating film 125f. Therefore, the top surface of the inorganic insulating film 125f preferably has a high affinity with the material (e.g., a photosensitive resin composition containing an acrylic resin) of the insulating film that will become the insulating layer 127. In order to improve this affinity, the top surface of the inorganic insulating film 125f can also be surface-treated. Specifically, it is preferred to hydrophobize the top surface of the inorganic insulating film 125f (or improve its hydrophobicity). For example, it is preferably processed using a silanizing agent such as hexamethyldisilazane (HMDS). By hydrophobizing the top surface of the inorganic insulating film 125f in this way, an insulating film 127f can be formed with high adhesion.

[0422] Then, if Figure 8C As shown in FIG. 1 , an insulating film 127 f which will later become the insulating layer 127 is formed on the inorganic insulating film 125 f.

[0423] The inorganic insulating film 125f and the insulating film 127f are preferably deposited using a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In particular, since the inorganic insulating film 125f is formed so as to contact the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, the inorganic insulating film 125f is preferably deposited using a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R than when the insulating film 127f is deposited.

[0424] Furthermore, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. By increasing the substrate temperature during deposition, the inorganic insulating film 125f can be formed even with a thin thickness, having a low impurity concentration and high barrier properties against at least one of water and oxygen.

[0425] The substrate temperature during formation of the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0426] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm, 5 nm, or 10 nm and 200 nm, 150 nm, 100 nm, or 50 nm within the above-mentioned substrate temperature range.

[0427] The inorganic insulating film 125f is preferably formed using, for example, ALD. Using ALD is preferred because it reduces deposition damage and allows for deposition of a film with high coverage. For example, an aluminum oxide film is preferably formed using ALD as the inorganic insulating film 125f.

[0428] Alternatively, the inorganic insulating film 125f may be formed by sputtering, CVD, or PECVD, which have a higher deposition rate than ALD. This allows a highly reliable light-emitting device to be manufactured with high productivity.

[0429] The insulating film 127f is preferably formed using the aforementioned wet deposition method. For example, the insulating film 127f is preferably formed using a photosensitive material by spin coating, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0430] For example, it is preferred to form the insulating film 127f using a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates an acid by irradiation with light and a compound that generates an acid by heating can be used. The resin composition may further include one or more of a photosensitizer, a sensitizer, a catalyst, an adhesive aid, a surfactant, and an antioxidant.

[0431] Furthermore, heat treatment (also referred to as pre-baking) is preferably performed after forming the insulating film 127f. This heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. The substrate temperature during the heat treatment is preferably 50°C to 200°C, more preferably 60°C to 150°C, and even more preferably 70°C to 120°C. This can remove the solvent in the insulating film 127f.

[0432] Next, exposure is performed to sensitize a portion of the insulating film 127f with visible light or ultraviolet light. Here, when a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will not be formed in a later step. The insulating layer 127 is formed in the region sandwiched between any two of the conductive layers 152B, 152G, and 152R, as well as around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152B, 152G, 152R, and 152C. Note that when a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will be formed.

[0433] The width of the insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment, the insulating layer 127 is processed so that a portion overlaps with the top surface of the conductive layer 151.

[0434] Here, by providing an oxygen-blocking insulating layer (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R) and the inorganic insulating film 125f, diffusion of oxygen into the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be suppressed. When light (visible light or ultraviolet light) is irradiated onto the organic compound layer, the organic compound contained in the organic compound layer may become excited, thereby promoting reaction with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layer in an oxygen-containing atmosphere, there is a possibility that oxygen may bond to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, the bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer can be reduced.

[0435] Then, if Figure 9A As shown, development is performed to remove the exposed areas of insulating film 127f, thereby forming insulating layer 127a. Insulating layer 127a is formed in an area sandwiched between any two of conductive layers 152B, 152G, and 152R, and in an area surrounding conductive layer 152C. When an acrylic resin is used for insulating film 127f, an alkaline solution, such as TMAH, can be used as a developer.

[0436] Then, if Figure 9B As shown, an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f, thereby reducing the thickness of the sacrificial layer 158B, the sacrificial layer 158G, and a portion of the sacrificial layer 158R. Thus, the inorganic insulating layer 125 is formed under the insulating layer 127a. Hereinafter, the etching process for processing the inorganic insulating film 125f using the insulating layer 127a as a mask may be referred to as the first etching process.

[0437] That is, the first etching process does not completely remove the sacrificial layers 158B, 158G, and 158R, but stops the etching process when the thickness of the sacrificial layers 158B, 158G, and 158R is reduced. Thus, by leaving the corresponding sacrificial layers 158B, 158G, and 158R on the organic compound layers 103B, 103G, and 103R, the organic compound layers 103B, 103G, and 103R can be prevented from being damaged in subsequent processing steps.

[0438] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layers 158B, 158G, and 158R, the first etching process can be used to simultaneously process the inorganic insulating film 125f and thin the exposed sacrificial layer 158. This is preferred.

[0439] By using the insulating layer 127 a with tapered side surfaces as a mask for etching, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158B, 158G, and 158R can be easily tapered.

[0440] For example, when dry etching is used for the first etching process, a chlorine-based gas can be used. As the chlorine-based gas, one gas selected from Cl2, BCl3, SiCl4, and CCl4, or a mixture of two or more thereof, can be used. Furthermore, one gas selected from oxygen, hydrogen, helium, and argon, or a mixture of two or more thereof, can be appropriately added to the chlorine-based gas. By utilizing dry etching, regions with reduced thickness in the sacrificial layers 158B, 158G, and 158R can be formed with excellent in-plane uniformity.

[0441] The first etching process can be performed by wet etching, for example. By using wet etching, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to the case of using dry etching.

[0442] Acidic solutions are preferably used in wet etching. Examples of acidic solutions include solutions containing phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or mixed solutions containing two or more acids (also referred to as mixed acid).

[0443] Alternatively, wet etching can be performed using an alkaline solution. For example, TMAH can be used as an alkaline solution for wet etching of an aluminum oxide film. In this case, wet etching can be performed using a coating method.

[0444] Next, heat treatment (also called post-baking) is performed. By performing heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on its side. Figure 9C ). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere can be either an air atmosphere or an inert atmosphere. In addition, the heating atmosphere can be either an air atmosphere or a reduced pressure atmosphere. In the heat treatment of this step, it is preferable to increase the substrate temperature compared to the heat treatment (pre-bake) after the insulating film 127f is formed.

[0445] Heat treatment can improve adhesion between the insulating layer 127 and the inorganic insulating layer 125 and improve corrosion resistance of the insulating layer 127. Furthermore, deformation of the insulating layer 127a can achieve a shape in which the end portion of the inorganic insulating layer 125 is covered by the insulating layer 127.

[0446] In the first etching process, the sacrificial layers 158B, 158G, and 158R are not completely removed, but are left with reduced thickness. This prevents the organic compound layers 103B, 103G, and 103R from being damaged and deteriorated during the heat treatment. This improves the reliability of the light-emitting device.

[0447] Then, if Figure 10A As shown, etching is performed using the insulating layer 127 as a mask to remove portions of the sacrificial layers 158B, 158G, and 158R. Note that at this time, a portion of the inorganic insulating layer 125 may also be removed. This etching process forms openings in the sacrificial layers 158B, 158G, and 158R, exposing the top surfaces of the organic compound layers 103B, 103G, and 103R and the conductive layer 152C. Hereinafter, the etching process in which the insulating layer 127 is used as a mask to expose the organic compound layers 103B, 103G, and 103R may be referred to as a second etching process.

[0448] The second etching process is performed using wet etching. Wet etching can reduce damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R compared to dry etching. As with the first etching process, wet etching can be performed using an acidic solution or an alkaline solution.

[0449] Alternatively, heat treatment may be performed after partially exposing the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. This heat treatment can remove water contained in the organic compound layer and water adsorbed on the surface of the organic compound layer. Furthermore, the shape of the insulating layer 127 may change due to this heat treatment. Specifically, the insulating layer 127 may expand to cover at least one of the end portions of the inorganic insulating layer 125, the end portions of the sacrificial layers 158B, 158G, and 158R, and the top surfaces of the organic compound layers 103B, 103G, and 103R.

[0450] also, Figure 10AAn example is shown in which a portion of the end portion of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered by the insulating layer 127 and the tapered portion formed by the second etching process is exposed (see FIG. Figure 3A ).

[0451] Alternatively, the insulating layer 127 may cover the entire end portion of the sacrificial layer 158G. For example, the end portion of the insulating layer 127 may droop to cover the end portion of the sacrificial layer 158G. Alternatively, for example, the end portion of the insulating layer 127 may contact the top surface of at least one of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0452] Then, if Figure 10B As shown in FIG. 1 , a common electrode 155 is formed over the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by a method such as sputtering or vacuum evaporation. Alternatively, the common electrode 155 can be formed by laminating a film formed by evaporation and a film formed by sputtering.

[0453] Then, if Figure 10C As shown, a capping layer 131 is formed on the common electrode 155. The capping layer 131 can be formed by vacuum evaporation, sputtering, CVD, ALD or other methods.

[0454] Next, substrate 120 is bonded to cap layer 131 using resin layer 122, thereby manufacturing a light-emitting device. As described above, in the method for manufacturing a light-emitting device according to one embodiment of the present invention, insulating layer 156 is provided so as to include a region overlapping with the side surfaces of conductive layer 151, and conductive layer 152 is formed so as to cover conductive layer 151 and insulating layer 156. This improves the yield of light-emitting devices and reduces the occurrence of defects.

[0455] As described above, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, the island-shaped organic compound layer 103B, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103R are not formed using a high-precision metal mask but are formed by depositing a film on one surface and then processing it, so that the island-shaped layer can be formed with a uniform thickness. In addition, a high-definition light-emitting device or a light-emitting device with a high aperture ratio can be realized. In addition, even if the clarity or aperture ratio is high and the distance between sub-pixels is extremely short, the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be prevented from contacting each other in adjacent sub-pixels. Therefore, leakage current between sub-pixels can be suppressed. Thus, crosstalk can be suppressed, and a light-emitting device with extremely high contrast can be realized. In addition, even a light-emitting device including a tandem light-emitting device manufactured using a photolithography method can provide a light-emitting device with good characteristics.

[0456] The structure described in this embodiment can be used in combination with the structures described in other embodiment modes as appropriate.

[0457] Implementation 4 In this embodiment, referring to Figures 11A to 11G as well as 12A to 12I A light-emitting device according to one embodiment of the present invention will be described.

[0458] [Pixel layout] In this embodiment, the main description is Figure 2A and Figure 2B Different pixel layouts. There are no particular restrictions on the arrangement of subpixels, and various arrangements can be used. Examples of subpixel arrangements include stripe arrangement, S-stripe arrangement, matrix arrangement, Delta arrangement, Bayer arrangement, and Pentile arrangement.

[0459] In this embodiment, the top surface shape of the sub-pixel shown in the drawings corresponds to the top surface shape of the light-emitting region.

[0460] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, the above polygonal shapes with rounded corners, an ellipse, or a circle.

[0461] Furthermore, the circuit layout constituting the sub-pixel is not limited to the range of the sub-pixel shown in the drawings, and may be arranged outside the sub-pixel.

[0462] Figure 11A The pixels 178 are shown arranged in an S-stripe pattern. Figure 11A The pixel 178 shown is composed of three sub-pixels: a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0463] Figure 11BPixel 178 shown includes sub-pixel 110R having a top surface shape that is approximately trapezoidal or triangular with rounded corners, sub-pixel 110G having a top surface shape that is approximately trapezoidal or triangular with rounded corners, and sub-pixel 110B having a top surface shape that is approximately quadrilateral or hexagonal with rounded corners. Furthermore, sub-pixel 110R has a larger light-emitting area than sub-pixel 110G. Thus, the shape and size of each sub-pixel can be determined independently. For example, a sub-pixel that includes a highly reliable light-emitting device can be smaller in size.

[0464] Figure 11C The pixels 124a and 124b shown are arranged in a Pentile arrangement. Figure 11C In the illustrated example, the pixel 124 a including the sub-pixel 110R and the sub-pixel 110G and the pixel 124 b including the sub-pixel 110G and the sub-pixel 110B are alternately arranged.

[0465] Figures 11D to 11F Pixels 124a and 124b are shown in a delta arrangement. Pixel 124a includes two subpixels (subpixel 110R and subpixel 110G) in the upper row (first row) and one subpixel (subpixel 110B) in the lower row (second row). Pixel 124b includes one subpixel (subpixel 110B) in the upper row (first row) and two subpixels (subpixel 110R and subpixel 110G) in the lower row (second row).

[0466] Figure 11D An example is shown in which each sub-pixel has a top surface shape that is approximately quadrangular with rounded corners. Figure 11E An example is shown in which each sub-pixel has a circular top surface shape. Figure 11F An example is shown in which each sub-pixel has a top surface shape that is approximately hexagonal with rounded corners.

[0467] exist Figure 11F In the image, each subpixel is arranged inside the most densely packed hexagonal area. Each subpixel is arranged so that, when focusing on one subpixel, it is surrounded by six subpixels. Furthermore, subpixels that emit the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110R, the subpixels are arranged so that three subpixels 110G and three subpixels 110B are arranged alternately to surround subpixel 110R.

[0468] Figure 11G Specifically, in a plan view, the top sides of two subpixels arranged in the row direction (for example, subpixel 110R and subpixel 110G or subpixel 110G and subpixel 110B) are offset from each other.

[0469] exist Figures 11A to 11GIn the illustrated pixels, for example, sub-pixel 110R is preferably configured as sub-pixel R emitting red light, sub-pixel 110G is preferably configured as sub-pixel G emitting green light, and sub-pixel 110B is preferably configured as sub-pixel B emitting blue light. Note that the sub-pixel structure is not limited to this, and the colors emitted by the sub-pixels and their arrangement order can be appropriately determined. For example, sub-pixel 110G can be configured as sub-pixel R emitting red light, and sub-pixel 110R can be configured as sub-pixel G emitting green light.

[0470] In photolithography, the finer the pattern being processed, the more important the effect of light diffraction is. Consequently, the fidelity of the pattern transferred from the photomask during exposure decreases, making it difficult to process the resist mask into the desired shape. Consequently, even rectangular photomask patterns can easily result in patterns with rounded corners. Consequently, the top surface of a sub-pixel may take on a rounded polygonal, elliptical, or circular shape.

[0471] Furthermore, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, an organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat-resistant temperature of the organic compound layer. Therefore, depending on the heat-resistant temperature of the material of the organic compound layer and the curing temperature of the resist material, the resist film may not be sufficiently cured. An insufficiently cured resist film may have a shape that is far from the desired shape when processed. As a result, the top surface shape of the organic compound layer may be a polygonal shape with rounded corners, an elliptical shape, a circular shape, or the like. For example, when a resist mask having a square top surface shape is to be formed, a resist mask having a circular top surface shape may be formed while the top surface shape of the organic compound layer is circular.

[0472] To achieve the desired top surface shape of the organic compound layer, a technique for pre-calibrating the mask pattern so that the design pattern matches the transferred pattern (OPC (Optical Proximity Correction) technology) can be used. Specifically, in OPC technology, for example, correction patterns are added to the corners of the pattern on the mask pattern.

[0473] like 12A to 12I As shown, a pixel may include four types of sub-pixels.

[0474] 12A to 12C The pixels 178 are shown arranged in a stripe pattern.

[0475] Figure 12A An example is shown in which each sub-pixel has a rectangular top surface shape. Figure 12B An example is shown in which each sub-pixel has a top surface shape that connects two semicircles and a rectangle. Figure 12C An example is shown in which each sub-pixel has an elliptical top surface shape.

[0476] 12D to 12F The pixels 178 are shown arranged in a matrix.

[0477] Figure 12D An example is shown in which each sub-pixel has a square top surface shape. Figure 12E An example is shown in which each sub-pixel has a top surface shape that is approximately square with rounded corners. Figure 12F An example is shown in which each sub-pixel has a circular top surface shape.

[0478] Figure 12G and Figure 12H An example is shown in which one pixel 178 is configured in two rows and three columns.

[0479] Figure 12G Pixel 178 is shown to include three subpixels (subpixel 110R, subpixel 110G, subpixel 110B) in the upper row (first row) and one subpixel (subpixel 110W) in the lower row (second row). In other words, pixel 178 includes subpixel 110R in the left column (first column), subpixel 110G in the center column (second column), subpixel 110B in the right column (third column), and subpixel 110W across all three columns.

[0480] Figure 12H The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (first row) and three sub-pixels 110W in the lower row (second row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110W in the left column (first column), sub-pixel 110G and sub-pixel 110W in the center column (second column), and sub-pixel 110B and sub-pixel 110W in the right column (third column). Figure 12H As shown, by aligning the arrangement of the sub-pixels in the upper and lower rows, for example, dust that may be generated during the manufacturing process can be efficiently removed. This makes it possible to provide a light-emitting device with high display quality.

[0481] exist Figure 12G and Figure 12H In the pixel 178 shown, the sub-pixels 110R, 110G, and 110B are arranged in a stripe pattern, thereby improving display quality.

[0482] Figure 12I An example is shown in which one pixel 178 is configured in three rows and two columns.

[0483] Figure 12IPixel 178 is shown to include subpixel 110R in the top row (first row), subpixel 110G in the center row (second row), subpixel 110B across the first and second rows, and one subpixel (subpixel 110W) in the bottom row (third row). In other words, pixel 178 includes subpixel 110R and subpixel 110G in the left column (first column), subpixel 110B in the right column (second column), and subpixel 110W across both columns.

[0484] exist Figure 12I In the pixel 178 shown, the layout of the sub-pixels 110R, 110G, and 110B is a so-called S-stripe arrangement, which can improve the display quality.

[0485] 12A to 12I The pixel 178 shown is composed of four sub-pixels: sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W. For example, sub-pixel 110R can be set as a sub-pixel that emits red light, sub-pixel 110G can be set as a sub-pixel that emits green light, sub-pixel 110B can be set as a sub-pixel that emits blue light, and sub-pixel 110W can be set as a sub-pixel that emits white light. Alternatively, at least one of sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W can be set as a sub-pixel that emits cyan light, a sub-pixel that emits magenta light, a sub-pixel that emits yellow light, or a sub-pixel that emits near-infrared light.

[0486] As described above, in the light-emitting device according to one embodiment of the present invention, various layouts can be adopted for pixels composed of sub-pixels including light-emitting devices.

[0487] This embodiment mode can be appropriately combined with other embodiment modes or examples. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be appropriately combined.

[0488] Implementation 5 In this embodiment, a light-emitting device which is one embodiment of the present invention is described.

[0489] The light-emitting device of this embodiment can be a high-definition light-emitting device. Therefore, for example, the light-emitting device of this embodiment can be used as a display unit of information terminal devices (wearable devices) such as watches and bracelets, as well as a display unit of wearable devices such as head-mounted displays (HMDs) for VR devices and glasses-type AR devices that can be worn on the head.

[0490] Furthermore, the light-emitting device of this embodiment mode can be a high-resolution or large-scale light-emitting device. Therefore, for example, the light-emitting device of this embodiment mode can be used as a display portion of electronic devices with large screens, such as televisions, desktop or notebook personal computers, monitors for computers, etc., digital signage, and large-scale game consoles such as pinball machines; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game consoles; portable information terminals; and audio reproduction devices.

[0491] [Display module] Figure 13A 2 shows a perspective view of display module 280. Display module 280 includes light emitting device 100A and FPC 290. Note that the light emitting device included in display module 280 is not limited to light emitting device 100A, but may be either light emitting device 100B or light emitting device 100C, which will be described later.

[0492] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is an image display region in the display module 280, and allows light from each pixel provided in a pixel portion 284 described below to be viewed.

[0493] Figure 13B This is a perspective schematic diagram of the structure on one side of a substrate 291. A circuit portion 282, a pixel circuit portion 283 on circuit portion 282, and a pixel portion 284 on pixel circuit portion 283 are stacked on substrate 291. Furthermore, a terminal portion 285 for connecting to an FPC 290 is provided on a portion of substrate 291 that does not overlap with pixel portion 284. The terminal portion 285 is electrically connected to the circuit portion 282 via a wiring portion 286 composed of a plurality of wiring lines.

[0494] The pixel portion 284 includes a plurality of pixels 284 a arranged periodically. Figure 13B An enlarged view of one pixel 284a is shown on the right side of FIG. The pixel 284a can adopt the various structures described in the above embodiment.

[0495] The pixel circuit portion 283 includes a plurality of pixel circuits 283 a arranged periodically.

[0496] A pixel circuit 283a controls the driving of multiple elements included in a pixel 284a. A pixel circuit 283a can include three circuits for controlling the light emission of a single light-emitting device. For example, a pixel circuit 283a can have a structure that includes at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This creates an active matrix light-emitting device.

[0497] The circuit unit 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit unit 283. For example, it preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, it may include at least one of a calculation circuit, a storage circuit, and a power supply circuit.

[0498] The FPC 290 is used as wiring for supplying video signals, power supply potential, and the like from the outside to the circuit portion 282. Alternatively, an IC may be mounted on the FPC 290.

[0499] The display module 280 can adopt a structure in which one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked on the lower side of the pixel unit 284, so that the display unit 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display unit 281 can be greater than 40% and less than 100%, preferably greater than 50% and less than 95%, and more preferably greater than 60% and less than 95%. In addition, the pixels 284a can be arranged at an extremely high density, thereby making the display unit 281 have extremely high clarity. For example, the display unit 281 preferably arranges the pixels 284a with a clarity of greater than 2000ppi, more preferably greater than 3000ppi, further preferably greater than 5000ppi, and even more preferably greater than 6000ppi and less than 20,000ppi or less than 30,000ppi.

[0500] This display module 280 has extremely high definition and is therefore suitable for use in VR devices such as HMDs or glasses-type AR devices. For example, because the display module 280 has an extremely high-definition display portion 281, in a structure where the display portion of the display module 280 is viewed through a lens, even if the display portion is magnified using the lens, the user cannot see the pixels, thereby achieving a highly immersive display. In addition, the display module 280 can also be applied to electronic devices with relatively small display portions. For example, it can be applied to the display portion of wearable electronic devices such as watch-type devices.

[0501] [Light-emitting device 100A] Figure 14A The light emitting device 100A shown includes a substrate 301 , a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240 , and a transistor 310 .

[0502] Substrate 301 is equivalent to Figure 13A and Figure 13BThe transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a portion of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 serves as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and serves as a gate insulating layer. The low resistance region 312 is a region doped with impurities in the substrate 301 and serves as a source or drain. The insulating layer 314 covers the side surfaces of the conductive layer 311.

[0503] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0504] Furthermore, an insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided over the insulating layer 261 .

[0505] Capacitor 240 includes conductive layer 241, conductive layer 245, and insulating layer 243 therebetween. Conductive layer 241 serves as one electrode of capacitor 240, conductive layer 245 serves as the other electrode of capacitor 240, and insulating layer 243 serves as a dielectric of capacitor 240.

[0506] Conductive layer 241 is provided on insulating layer 261 and embedded in insulating layer 254. Conductive layer 241 is electrically connected to one of the source and drain of transistor 310 via plug 271 embedded in insulating layer 261. Insulating layer 243 is provided to cover conductive layer 241. Conductive layer 245 is provided in a region overlapping conductive layer 241 with insulating layer 243 interposed therebetween.

[0507] An insulating layer 255 is provided to cover the capacitor 240. An insulating layer 174 is provided on the insulating layer 255. An insulating layer 175 is provided on the insulating layer 174. The light emitting devices 130R, 130G, and 130B are provided on the insulating layer 175. Figure 14A The light emitting device 130R, the light emitting device 130G and the light emitting device 130B are shown to have Figure 6A An example of a stacked structure is shown. An insulating material is provided in the region between adjacent light emitting devices. For example, Figure 14A In this region, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided.

[0508] Insulating layer 156R is provided so as to have a region overlapping with the side surface of conductive layer 151R included in light-emitting device 130R. Insulating layer 156G is provided so as to have a region overlapping with the side surface of conductive layer 151G included in light-emitting device 130G. Insulating layer 156B is provided so as to have a region overlapping with the side surface of conductive layer 151B included in light-emitting device 130B. Furthermore, conductive layer 152R is provided so as to cover conductive layer 151R and insulating layer 156R. Conductive layer 152G is provided so as to cover conductive layer 151G and insulating layer 156G. Conductive layer 152B is provided so as to cover conductive layer 151B and insulating layer 156B. Furthermore, the sacrificial layer 158R is located on the organic compound layer 103R included in the light emitting device 130R, the sacrificial layer 158G is located on the organic compound layer 103G included in the light emitting device 130G, and the sacrificial layer 158B is located on the organic compound layer 103B included in the light emitting device 130B.

[0509] Conductive layers 151R, 151G, and 151B are electrically connected to one of the source and drain of transistor 310 via plugs 256 embedded in insulating layers 243, 255, 174, and 175, conductive layer 241 embedded in insulating layer 254, and plug 271 embedded in insulating layer 261. The height of the top surface of insulating layer 175 is equal to or substantially equal to the height of the top surface of plug 256. Various conductive materials can be used for the plugs.

[0510] Furthermore, the substrate 120 is bonded to the cover layer 131 of each light emitting device via the resin layer 122. The details of the components from the light emitting device 130 to the substrate 120 can be referred to Embodiment 2. The substrate 120 corresponds to Figure 13A substrate 292.

[0511] Figure 14B Show Figure 14A This is a modified example of the light emitting device 100A shown. Figure 14B The light emitting device shown includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light emitting device 130 has a region overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. Figure 14B In the light-emitting device shown, the light-emitting element 130 can emit white light, for example. In addition, the colored layer 132R, the colored layer 132G, and the colored layer 132B can transmit red light, green light, and blue light, respectively.

[0512] [Light-emitting device 100B] Figure 15 A perspective view showing a light emitting device 100B is shown. Figure 16A A cross-sectional view of the light emitting device 100B is shown.

[0513] The light emitting device 100B has a structure in which a substrate 352 and a substrate 351 are bonded together. Figure 15 , the substrate 352 is indicated by a dotted line.

[0514] The light-emitting device 100B includes a pixel portion 177 , a connection portion 140 , a circuit 356 , a wiring 355 , and the like. Figure 15 The example in which the light emitting device 100B is mounted with an IC (integrated circuit) 354 and an FPC 353 is shown. Figure 15 The structure shown is called a display module including the light emitting device 100B, IC and FPC. Here, the substrate of the light emitting device with a connector such as FPC mounted thereon or the substrate with IC mounted thereon is called a display module.

[0515] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 may be provided along one side or multiple sides of the pixel portion 177. The number of the connection portions 140 may also be one or more. Figure 15 In the example shown, the connection portion 140 is provided so as to surround four sides of the pixel portion 117. The common electrode of the light-emitting device is electrically connected to the conductive layer at the connection portion 140, so that a potential can be supplied to the common electrode.

[0516] As the circuit 356 , for example, a scan line driver circuit can be used.

[0517] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside through the FPC 353 or from the IC 354.

[0518] Figure 15 An example is shown in which an IC 354 is provided on a substrate 351 using a COG (Chip On Glass) method or a COF (Chip On Film) method. For example, an IC including a scan line driver circuit or a signal line driver circuit can be used as IC 354. Note that the light-emitting device 100B and the display module do not necessarily need to be provided with an IC. Alternatively, the IC can be mounted on an FPC using a COF method, for example.

[0519] Figure 16A An example of a cross section of the light emitting device 100B including a portion of the region including the FPC 353 , a portion of the circuit 356 , a portion of the pixel portion 177 , a portion of the connection portion 140 , and a portion of the region including the end portion is shown.

[0520] Figure 16AThe light-emitting device 100B shown includes a transistor 201 , a transistor 205 , a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc., between a substrate 351 and a substrate 352 .

[0521] The light emitting device 130R, the light emitting device 130G and the light emitting device 130B all have the same structure except that the structure of the pixel electrode is different. Figure 6A For details of the light emitting device, refer to Embodiment 1 and Embodiment 2 above.

[0522] Light-emitting device 130R includes a conductive layer 224R, a conductive layer 151R on conductive layer 224R, and a conductive layer 152R on conductive layer 151R. Light-emitting device 130G includes a conductive layer 224G, a conductive layer 151G on conductive layer 224G, and a conductive layer 152G on conductive layer 151G. Light-emitting device 130B includes a conductive layer 224B, a conductive layer 151B on conductive layer 224B, and a conductive layer 152B on conductive layer 151B. Herein, conductive layer 224R, conductive layer 151R, and conductive layer 152R may be collectively referred to as the pixel electrode of light-emitting device 130R, and conductive layer 151R and conductive layer 152R excluding conductive layer 224R may also be referred to as the pixel electrode of light-emitting device 130R.

[0523] Similarly, conductive layer 224G, conductive layer 151G, and conductive layer 152G may be collectively referred to as the pixel electrode of light-emitting device 130G, and conductive layer 151G and conductive layer 152G excluding conductive layer 224G may also be referred to as the pixel electrode of light-emitting device 130G. Furthermore, conductive layer 224B, conductive layer 151B, and conductive layer 152B may be collectively referred to as the pixel electrode of light-emitting device 130B, and conductive layer 151B and conductive layer 152B excluding conductive layer 224B may also be referred to as the pixel electrode of light-emitting device 130B.

[0524] Conductive layer 224R is connected to conductive layer 222b included in transistor 205 through an opening provided in insulating layer 214. An end portion of conductive layer 151R is located outside an end portion of conductive layer 224R. Insulating layer 156R is provided to have a region in contact with a side surface of conductive layer 151R, and conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R.

[0525] The conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in the light-emitting device 130G and the conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in the light-emitting device 130B are the same as the conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in the light-emitting device 130R, so detailed description is omitted.

[0526] Concave portions are formed in conductive layer 224R, conductive layer 224G, and conductive layer 224B so as to cover the openings provided in insulating layer 214. Layer 128 is embedded in these concave portions.

[0527] Layer 128 flattens the concave portions of conductive layers 224R, 224G, and 224B. Conductive layers 151R, 151G, and 151B, electrically connected to conductive layers 224R, 224G, and 224B, are provided over conductive layers 224R, 224G, and 224B, and layer 128. Therefore, the areas overlapping the concave portions of conductive layers 224R, 224G, and 224B can also be used as light-emitting areas, thereby increasing the pixel aperture ratio.

[0528] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for layer 128. In particular, layer 128 is preferably formed of an insulating material, and an organic insulating material is particularly preferred. For example, the organic insulating materials described above for insulating layer 127 can be used for layer 128.

[0529] A capping layer 131 is provided on the common electrode 155. In addition, the capping layer 131 and the substrate 352 are bonded by an adhesive layer 142. The substrate 352 is provided with a light shielding layer 157. The sealing of the light emitting device 130 can adopt a solid sealing structure or a hollow sealing structure. Figure 16A In the embodiment, the space between substrate 352 and substrate 351 is filled with adhesive layer 142, i.e., a solid sealing structure is adopted. Alternatively, an inert gas (such as nitrogen or argon) can be used to fill the space, thereby adopting a hollow sealing structure. In this case, adhesive layer 142 can also be provided so as not to overlap with the light-emitting device. In addition, a resin different from the adhesive layer 142 provided in the frame shape can also be used to fill the space.

[0530] An inorganic insulating film, such as a film containing nitrogen (e.g., a silicon nitride film), is provided as a solid sealing structure. The cap layer 131 is preferably in contact with the inorganic insulating film. The thickness of the inorganic insulating film is preferably greater than that of the cap layer, and the ordinary refractive index n of the inorganic insulating film is preferably greater than that of the cap layer. This structure is expected to improve light extraction efficiency.

[0531] Figure 16A In the example shown below, the connection portion 140 includes a conductive layer 224C formed by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C formed by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C formed by processing the same conductive film as the conductive layers 152R, 152G, and 152B. Figure 16A An example is shown in which the insulating layer 156C is provided so as to have a region overlapping with the side surface of the conductive layer 151C.

[0532] The light-emitting device 100B is a top-emission display device. The light-emitting element emits light toward the substrate 352. The substrate 352 is preferably made of a material that has high visible light transmittance. The pixel electrode is made of a material that reflects visible light, while the counter electrode (common electrode 155) is made of a material that transmits visible light.

[0533] The transistor 201 and the transistor 205 are both formed over the substrate 351. These transistors can be formed using the same material and the same process.

[0534] Insulating layer 211, insulating layer 213, insulating layer 215, and insulating layer 214 are sequentially provided on substrate 351. A portion of insulating layer 211 serves as a gate insulating layer for each transistor. A portion of insulating layer 213 serves as a gate insulating layer for each transistor. Insulating layer 215 is provided to cover the transistors. Insulating layer 214 is provided to cover the transistors and serves as a planarization layer. There are no particular restrictions on the number of gate insulating layers or insulating layers covering the transistors; they can be one or two or more.

[0535] Preferably, at least one of the insulating layers covering the transistor is made of a material that is less susceptible to diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. This structure effectively suppresses the diffusion of impurities from the outside into the transistor, thereby improving the reliability of the light-emitting device.

[0536] Inorganic insulating films are preferably used as the insulating layer 211, the insulating layer 213, and the insulating layer 215. Examples of the inorganic insulating film include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may be used. Furthermore, two or more of the above insulating films may be stacked.

[0537] The insulating layer 214 used as a planarizing layer is preferably an organic insulating layer. Examples of materials that can be used for the organic insulating layer include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of the above resins. In addition, the insulating layer 214 may also have a stacked structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 is preferably used as an etching protection layer. As a result, when processing the conductive layer 224R, the conductive layer 151R, or the conductive layer 152R, etc., it is possible to suppress the formation of recesses in the insulating layer 214. Alternatively, recesses may be provided in the insulating layer 214 when processing the conductive layer 224R, the conductive layer 151R, or the conductive layer 152R, etc.

[0538] Transistor 201 and transistor 205 include a conductive layer 221 serving as a gate electrode; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as a source and drain electrode; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate electrode. Multiple layers formed by processing the same conductive film are indicated by the same hatching. Insulating layer 211 is located between conductive layer 221 and semiconductor layer 231. Insulating layer 213 is located between conductive layer 223 and semiconductor layer 231.

[0539] There are no particular limitations on the transistor structure included in the light-emitting device of this embodiment. For example, planar transistors, staggered transistors, or inversely staggered transistors may be used. Furthermore, the transistors may have a top-gate or bottom-gate structure. Alternatively, gates may be provided above and below the semiconductor layer forming the channel.

[0540] Transistors 201 and 205 employ a structure in which a semiconductor layer forming a channel is sandwiched between two gates. Alternatively, the two gates may be connected and the same signal supplied to both gates to drive the transistors. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving the other.

[0541] There are no particular restrictions on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor or a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part thereof) can be used. The use of a crystalline semiconductor is preferred because it can suppress the degradation of transistor characteristics.

[0542] A metal oxide is preferably used for the semiconductor layer of the transistor. That is, the light-emitting device of this embodiment preferably uses a transistor containing a metal oxide in the channel formation region (hereinafter referred to as an OS transistor).

[0543] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0544] Alternatively, a transistor using silicon for the channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor containing low temperature polycrystalline silicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. LTPS transistors have high field effect mobility and good frequency characteristics.

[0545] By using Si transistors such as LTPS transistors, circuits requiring high-frequency drive (e.g., source driver circuits) and the display unit can be formed on the same substrate. This simplifies the external circuitry attached to the light-emitting device, reducing component and installation costs.

[0546] The field-effect mobility of OS transistors is significantly higher than that of transistors using amorphous silicon. Furthermore, the leakage current between the source and drain of an OS transistor when it is off (hereinafter also referred to as off-state current) is extremely low, allowing it to retain the charge stored in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of OS transistors can reduce the power consumption of light-emitting devices.

[0547] Furthermore, to increase the brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the driver transistor included in the pixel circuit. Because the source-drain withstand voltage of an OS transistor is higher than that of a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driver transistor included in the pixel circuit, the current flowing through the light-emitting device can be increased, thereby improving the brightness of the light-emitting device.

[0548] Furthermore, when operating in the saturation region, OS transistors can make the changes in source-drain current associated with changes in gate-source voltage more subtle than those of Si transistors. Therefore, by using OS transistors as driver transistors included in pixel circuits, the current flowing between the source and drain can be precisely determined based on changes in gate-source voltage, allowing the amount of current flowing through the light-emitting device to be controlled. This increases the grayscale represented by the pixel circuit.

[0549] Furthermore, regarding the saturation characteristics of the current flowing through a transistor when operating in the saturation region, compared to Si transistors, OS transistors can allow a stable current (saturation current) to flow even when the source-drain voltage is gradually increased. Therefore, by using an OS transistor as a driver transistor, a stable current can flow through the light-emitting device even if, for example, the current-voltage characteristics of the light-emitting device are uneven. In other words, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current remains almost unchanged, thereby stabilizing the luminance of the light-emitting device.

[0550] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, “suppression of black impurities,” “increase in luminous brightness,” “multi-gradation,” and “suppression of unevenness in light-emitting devices” can be achieved.

[0551] For example, the semiconductor layer preferably contains indium, an element M1 (the element M1 is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, the element M1 is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0552] In particular, as the semiconductor layer, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO) is preferably used.

[0553] When an In-M-Zn oxide is used for the semiconductor layer, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include compositions such as In:M:Zn = 1:1:1 or thereabouts, In:M:Zn = 1:1:1.2 or thereabouts, In:M:Zn = 2:1:3 or thereabouts, In:M:Zn = 3:1:2 or thereabouts, In:M:Zn = 4:2:3 or thereabouts, In:M:Zn = 4:2:4.1 or thereabouts, In:M:Zn = 5:1:3 or thereabouts, In:M:Zn = 5:1:6 or thereabouts, In:M:Zn = 5:1:7 or thereabouts, In:M:Zn = 5:1:8 or thereabouts, In:M:Zn = 6:1:6 or thereabouts, and In:M:Zn = 5:2:5 or thereabouts. The preferred compositions include compositions within a range of ±30% of the desired atomic ratio.

[0554] For example, a composition described as having an atomic number ratio of In:Ga:Zn = 4:2:3 or thereabouts includes the following cases: when the atomic number ratio of In is 4, the atomic number ratio of Ga is 1 or more and 3 or less, and the atomic number ratio of Zn is 2 or more and 4 or less. Furthermore, a composition described as having an atomic number ratio of In:Ga:Zn = 5:1:6 or thereabouts includes the following cases: when the atomic number ratio of In is 5, the atomic number ratio of Ga is greater than 0.1 and 2 or less, and the atomic number ratio of Zn is 5 or more and 7 or less. Furthermore, a composition described as having an atomic number ratio of In:Ga:Zn = 1:1:1 or thereabouts includes the following cases: when the atomic number ratio of In is 1, the atomic number ratio of Ga is greater than 0.1 and 2 or less, and the atomic number ratio of Zn is greater than 0.1 and 2 or less.

[0555] The transistors included in the circuit 356 and the transistors included in the pixel portion 177 may have the same structure or different structures. The multiple transistors included in the circuit 356 may have the same structure or two or more different structures. Similarly, the multiple transistors included in the pixel portion 177 may have the same structure or two or more different structures.

[0556] All transistors included in the pixel portion 177 may be OS transistors, all transistors included in the pixel portion 177 may be Si transistors, or some transistors included in the pixel portion 177 may be OS transistors and the remaining transistors may be Si transistors.

[0557] For example, by using both an LTPS transistor and an OS transistor in the pixel portion 177, a light-emitting device with low power consumption and high driving capability can be realized. Furthermore, a structure combining an LTPS transistor and an OS transistor is sometimes referred to as LTPO. Furthermore, for example, it is preferable to use an OS transistor as a transistor used as a switch to control the conduction / non-conduction of a wiring, and to use an LTPS transistor as a transistor to control current.

[0558] For example, one of the transistors included in pixel portion 177 is used as a transistor for controlling the current flowing through the light-emitting device and can be referred to as a drive transistor. One of the source and drain electrodes of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. An LTPS transistor is preferably used as the drive transistor. This can increase the current flowing through the light-emitting device in the pixel circuit.

[0559] On the other hand, one of the other transistors included in the pixel portion 177 is used as a switch for controlling the selection and non-selection of the pixel, and may also be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). An OS transistor is preferably used as the selection transistor. Thus, since the grayscale of the pixel can be maintained even if the frame frequency is extremely low (for example, below 1 fps), power consumption can be reduced by stopping the driver when displaying a static image.

[0560] In this manner, the light-emitting device according to one embodiment of the present invention can achieve high aperture ratio, high definition, high display quality, and low power consumption.

[0561] Note that a light-emitting device according to one embodiment of the present invention adopts a structure including an OS transistor and a light-emitting device having an MML (Metal Mask Less) structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (sometimes referred to as lateral leakage current, transverse leakage current, or transverse leakage current) can be made extremely low. In addition, by adopting the above-mentioned structure, when an image is displayed on the light-emitting device, the viewer can observe any one or more of the image's sharpness, image sharpness, high color saturation, and high contrast. In addition, by adopting a structure in which the leakage current that can flow through the transistor and the transverse leakage current between the light-emitting devices are extremely low, a display with minimal light leakage (so-called impure black) that can occur when displaying black can be performed.

[0562] In particular, when the above-mentioned SBS (Side By Side) structure is adopted in the light-emitting device of the MML structure, the layer arranged between the light-emitting devices (for example, also called the organic layer commonly used in the light-emitting devices, or the common layer) is disconnected, thereby eliminating the leakage current or making the leakage current extremely small.

[0563] Figure 16B and Figure 16C Other structural examples of transistors are shown.

[0564] The transistor 209 and the transistor 210 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n; a conductive layer 222a connected to one of the pair of low-resistance regions 231n; a conductive layer 222b connected to the other of the pair of low-resistance regions 231n; an insulating layer 225 serving as a gate insulating layer; a conductive layer 223 serving as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistors may be provided.

[0565] exist Figure 16B In the illustrated example, in the transistor 209, the insulating layer 225 covers the top and side surfaces of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n via openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layers 222a and 222b functions as a source, and the other functions as a drain.

[0566] On the other hand, Figure 16C In the transistor 210 shown in FIG. 1 , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, a Figure 16C The structure shown. Figure 16C In the embodiment, the insulating layer 215 covers the insulating layer 225 and the conductive layer 223 , and the conductive layer 222 a and the conductive layer 222 b are connected to the low resistance region 231 n through the openings of the insulating layer 215 .

[0567] Connecting portion 204 is provided in a region of substrate 351 that does not overlap with substrate 352. In connecting portion 204, wiring 355 is electrically connected to FPC 353 via conductive layer 166 and connecting layer 242. Conductive layer 166 illustrates an example structure comprising a stack of the same conductive film as conductive layers 224R, 224G, and 224B, the same conductive film as conductive layers 151R, 151G, and 151B, and the same conductive film as conductive layers 152R, 152G, and 152B. Conductive layer 166 is exposed on the top surface of connecting portion 204. Therefore, connecting portion 204 and FPC 353 can be electrically connected via connecting layer 242.

[0568] A light shielding layer 157 is preferably provided on the substrate 351 side surface of the substrate 352. The light shielding layer 157 can be provided between adjacent light emitting devices, in the connection portion 140, in the circuit 356, etc. Various optical components can be arranged outside the substrate 352.

[0569] The substrate 351 and the substrate 352 may be made of the same material as that used for the substrate 120 .

[0570] As the adhesive layer 142 , a material that can be used for the resin layer 122 can be used.

[0571] As the connection layer 242 , an anisotropic conductive film (ACF) or anisotropic conductive paste (ACP) can be used.

[0572] [Light-emitting device 100H] Figure 17 The light emitting device 100H shown is Figure 16A The main difference between the light emitting device 100B shown is that the former is a light emitting device adopting a bottom emission structure.

[0573] Light emitted by the light emitting device is emitted toward the substrate 351. A material having high visible light transmittance is preferably used for the substrate 351. On the other hand, there is no limitation on the light transmittance of the material used for the substrate 352. [057...

Claims

1. An organic compound represented by the general formula (G1): ， in, R 1 To R 4 Each independently represents any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the general formula (G1-1), R 5 To R 8 Each independently represents any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the general formula (G1-3), R 5 To R 8 At least one of represents the substituent represented by the general formula (G1-3), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3, Ar 13 ,Ar 15 and Ar 16 each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 ,Ar 16 and Ar 17 At least two of the groups represent monovalent or divalent bicyclic or tricyclic aromatic hydrocarbon groups or monovalent or divalent aromatic heterocyclic groups, n13 represents an integer of 0 to 3, and n14, n15, n16, and n17 each independently represent an integer of 1 to 3, And, n15+n16+n17>n13+n14 is satisfied.

2. The organic compound according to claim 1, Among them, Ar 15 ,Ar 16 and Ar 17 At least two of them represent naphthalene and each naphthalene is bonded to the other substituent at the 2-position.

3. The organic compound according to claim 1, Among them, Ar 16 represents naphthalene and Ar 17 Represents naphthalene, And in a partial structure, there is 2,2'-binaphthyl in which the naphthalenes are bonded to each other at the 2-position.

4. The organic compound according to claim 1, Among them, Ar 11 To Ar 17 Each independently represents an aromatic hydrocarbon group.

5. The organic compound according to claim 1, The evaporation temperature is below 330°C.

6. The organic compound according to claim 1, The organic compound is represented by structural formula (100) or structural formula (101): 。 7. The organic compound according to claim 1, The organic compound is an organic compound used for a capping layer.

8. A light emitting device, comprising: cathode; as well as The capping layer on the cathode, Wherein, the cap layer comprises an organic compound represented by the general formula (G1): R 1 To R 4 Each independently represents any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the general formula (G1-1), R 5 To R 8 Each independently represents any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the general formula (G1-3), R 5 To R 8 At least one of represents the substituent represented by the general formula (G1-3), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3, Ar 13 ,Ar 15 and Ar 16 each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 ,Ar 16 and Ar 17 At least two of the groups represent monovalent or divalent bicyclic or tricyclic aromatic hydrocarbon groups or monovalent or divalent aromatic heterocyclic groups, n13, n15 and n16 each independently represent an integer of 0 to 3, and n14 and n17 each independently represent an integer of 1 to 3, And, n15+n16+n17≥n13+n14 is satisfied.

9. A light emitting device, comprising: cathode; as well as The capping layer on the cathode, Wherein, the cap layer comprises an organic compound represented by the general formula (G1): R 1 To R 4 Each independently represents any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the general formula (G1-1), R 5 To R 8 Each independently represents any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the general formula (G1-2), R 5 To R 8 At least one of represents the substituent represented by the general formula (G1-2), Ar 11 represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 12 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 14 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3, Ar 13 and Ar 15 each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 14 and Ar 17 each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms, Ar 15 and Ar 17 At least one of them represents phenanthrene, In Ar 17 In the case of phenanthrene, the 2-position or 3-position of the phenanthrene is bonded to another group, n13 represents an integer of 0 to 3, and n14, n15, and n17 each independently represent an integer of 1 to 3, And, n15+n17>n13+n14 is satisfied.

10. The light emitting device according to claim 8, The organic compound has a vapor deposition temperature of 330° C. or less.

11. The light emitting device according to claim 8, The organic compound is represented by structural formula (100), structural formula (101), structural formula (102), structural formula (123) or structural formula (150):

12. The light emitting device according to claim 8, The ordinary refractive index n of the organic compound at 450 nm is o The ordinary light extinction coefficient k is greater than 1.9 at 450 nm. o Is less than 0.

2.

13. The light emitting device according to claim 8, The ordinary refractive index n of the organic compound at 520 nm is o The ordinary light extinction coefficient k is greater than 1.8 at 520 nm. o Is less than 0.

2.

14. The light emitting device according to claim 8, The ordinary refractive index n of the organic compound at 630 nm is o The ordinary light extinction coefficient k is greater than 1.75 at 630 nm. o Is less than 0.

2.

15. The light emitting device according to claim 8, The refractive index of the organic compound at ordinary light with a wavelength of 360 nm or more and 830 nm or less is n o With extraordinary refractive index n e The difference is greater than or equal to 0.1 and less than or equal to 0.

4.

16. An electronic device comprising: The light emitting device according to claim 8.

17. The light emitting device according to claim 9, The organic compound has a vapor deposition temperature of 330° C. or less.

18. An electronic device comprising: The light emitting device according to claim 9.

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