Manufacturing method of porous film layer, packaging substrate and chip

Abstract

The embodiment of the invention provides a manufacturing method of a porous film layer, a packaging substrate and a chip, and the manufacturing method comprises the steps: providing a planet carrier; the planet carrier comprises a plurality of planet plates and a base fixed on the planet plates; the planetary disc revolves around the normal of the planetary carrier and rotates around the normal of the plane where the planetary disc is located. The base comprises a first surface and a second surface which are oppositely arranged; the first surface is attached to the plane of the planetary plate; a first included angle is formed between the first surface and the second surface; fixing the substrate on the second surface; the first included angle is adjusted, so that a second included angle is formed between the to-be-deposited plane of the substrate and the deposition direction of the to-be-deposited material; the second included angle is larger than 0 degree and smaller than 90 degrees; the revolution speed and the rotation speed of the planetary plate are controlled, and the deposition rate of a to-be-deposited material is controlled; and depositing the to-be-deposited material on the to-be-deposited plane of the substrate along the deposition direction to form a porous film layer.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of semiconductor technology, and in particular to a method for manufacturing a porous membrane layer, a packaging substrate, and a chip. Background Art

[0002] Electron beam evaporation is a form of physical vapor deposition. It uses accelerated electrons to bombard the target material in the crucible. The kinetic energy of the electrons is converted into heat energy to heat and evaporate the target material. In a high vacuum chamber, the evaporated target material is then deposited on the substrate to form a film layer. In some cases, the electron beam evaporation flow is perpendicular to the substrate, and a dense and uniform film layer is deposited on the surface of the substrate. In other cases, it is necessary to increase the specific surface area of ​​the film layer, enhance the electron and ion transmission of the film layer and other surface effects, thereby improving the surface and interface performance of the film layer. Summary of the invention

[0003] In view of this, embodiments of the present application provide a method for manufacturing a porous membrane layer, a packaging substrate, and a chip.

[0004] In the first aspect, an embodiment of the present application provides a method for manufacturing a porous membrane layer, which manufacturing method includes: providing a planetary carrier; the planetary carrier includes a plurality of planetary disks and a base fixed on the planetary disks; the planetary disks revolve around the normal of the planetary carrier and rotate around the normal of the plane where the planetary disks are located; the base includes a first surface and a second surface arranged opposite to each other; the first surface fits the plane where the planetary disks are located; a first angle is formed between the first surface and the second surface; a substrate is fixed on the second surface; the first angle is adjusted so that a second angle is formed between the plane to be deposited of the substrate and the deposition direction of the material to be deposited; the second angle is greater than 0 degrees and less than 90 degrees; controlling the revolution speed, rotation speed and deposition rate of the planetary disks and controlling the deposition rate of the material to be deposited; depositing the material to be deposited on the plane to be deposited of the substrate along the deposition direction to form a porous membrane layer.

[0005] In some embodiments, the porosity of the porous membrane layer ranges from greater than zero to less than or equal to 1.2.

[0006] In some embodiments, the control includes the orbital speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, including: the smaller the rotation speed of the planetary disk and the larger the second angle, the porous membrane layer formed includes a spiral structure; the spiral structure is obtained by growing along a spiral rising curve; or, the larger the rotation speed of the planetary disk and the smaller the second angle, the porous membrane layer formed includes a gradient radial structure; the gradient radial structure is obtained by axial growth.

[0007] In some embodiments, the control includes the orbital speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, including: controlling the rotation mode to be an intermittent mode; the intermittent mode includes the duration and interval of the rotation; the duration is less than the interval shown.

[0008] In some embodiments, the mode of controlling the rotation is an intermittent mode, including: the rotation speed range is 0.5rpm to 2rpm, the duration range is 1s to 5s, and the interval range is 6s to 24s; controlling the deposition rate of the material to be deposited includes: controlling the deposition rate range is Adjusting the first angle includes: making the range of the second angle greater than or equal to 70 degrees and less than 90 degrees.

[0009] In some embodiments, the helical structure includes a helix angle; the helix angle ranges from 15 degrees to 75 degrees.

[0010] In some embodiments, the control includes the revolution speed and rotation speed of the planetary disk and the control of the deposition rate of the material to be deposited, including: controlling the rotation mode to be a continuous mode.

[0011] In some embodiments, the mode of controlling the rotation is an intermittent mode, including: the rotation speed range is greater than or equal to 15rpm; controlling the deposition rate of the material to be deposited, including: controlling the deposition rate range is 4nm / min to 8nm / min; adjusting the first angle, including: making the range of the second angle greater than or equal to 55 degrees and less than 90 degrees.

[0012] In some embodiments, the gradient radial structure includes a plurality of gradient radial bodies extending in the axial direction and a connecting portion between two adjacent gradient radial bodies; the radial size of the two adjacent gradient radial bodies is greater than the radial size of the connecting portion.

[0013] In some embodiments, fixing the substrate on the second surface includes: rotating the substrate around the normal of the plane where the planetary disk is located, so that the normal of the second surface is rotationally symmetric around the normal of the planetary carrier.

[0014] In a second aspect, an embodiment of the present application provides a packaging substrate, which is obtained by any one of the manufacturing methods provided in the first aspect.

[0015] In a third aspect, an embodiment of the present application provides a chip, wherein a packaging substrate of the chip is obtained by any one of the manufacturing methods provided in the first aspect.

[0016] In each embodiment of the present application, a base with an adjustable first angle is introduced to fix the substrate; the first angle of the base is adjusted so that the angle between the electron beam evaporation flow and the surface to be deposited of the substrate has a second angle greater than 0 degrees and less than 90 degrees; by controlling the orbital speed and rotational speed of the planetary disk and the deposition rate of the material to be deposited, the material to be deposited is deposited on the surface to be deposited of the substrate along the deposition direction to obtain a porous film layer; the porous film layer is used to enhance the efficiency of ion and electron transmission, thereby improving the surface and interface performance of the porous film layer material. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A side view of a partial structure of an electron beam evaporation / electron beam evaporation device in the related art;

[0018] Figure 2 for Figure 1 A schematic cross-sectional view of a partial structure in a chamber;

[0019] Figure 3 for Figure 2 An enlarged schematic diagram of the relationship between the substrate and the electron beam evaporation flow angle;

[0020] Figure 4 A schematic diagram of a process for manufacturing a porous membrane layer provided in an embodiment of the present application;

[0021] Figure 5 A side view of a partial structure in a chamber of an electron beam evaporation / electron beam evaporation device provided in an embodiment of the present application;

[0022] Figure 6 for Figure 5 One of the cross-sectional schematic diagrams of the structure of part of the chamber;

[0023] Figure 7 for Figure 6 A magnified schematic diagram of the angle relationship between the planetary disk and the substrate, and the angle relationship between the substrate and the electron beam evaporation flow;

[0024] Figure 8 for Figure 5 The second cross-sectional schematic diagram of the structure of the chamber;

[0025] Fig. 9 for Figure 5 The third schematic cross-sectional view of the structure of the chamber;

[0026] Fig. 10A , Fig. 10B and Fig. 10C A schematic diagram of a manufacturing process for forming a porous membrane layer;

[0027] Fig.11 This is a SEM schematic diagram of the spiral structure;

[0028] Fig.12 SEM schematic diagram of the gradient radial structure. DETAILED DESCRIPTION

[0029] The following will combine the implementation methods and drawings of this application to clearly and completely describe the technical solutions in the implementation methods of this application. The described implementation methods are only part of the implementation methods of this application, not all of the implementation methods. Based on the implementation methods in this application, all other implementation methods obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0030] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0031] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0032] Figure 1 A side view of a partial structure of an electron beam evaporation / electron beam evaporation device in the related art. Figure 2 for Figure 1 Schematic cross-sectional view of part of the structure inside the chamber. Figure 3 for Figure 2 An enlarged schematic diagram of the relationship between the substrate and the electron beam evaporation flow angle.

[0033] refer to Figure 1 Electron beam evaporation uses electrons generated by an electron source to form an electron beam by accelerating the electrons. The electron beam bombards the target material in the crucible, and the kinetic energy of the electron beam is converted into heat energy to heat and evaporate the target material. In a high vacuum chamber, the evaporated target material (electron beam evaporation flow) is then deposited on the surface to be deposited on the substrate to form a film layer. Electron beam evaporation also includes a planetary frame, which is provided with a plurality of planetary disks, and the planetary disks revolve around the normal line of the planetary frame.

[0034] refer to Figure 2The side of the planetary disk close to the target material is used to fix the substrate, and the substrate fixed on the planetary disk can revolve around the normal line of the planetary frame with the planetary disk. By controlling the revolution speed of the planetary disk and the deposition rate of the material to be deposited, the material to be deposited is deposited on the deposition plane of the substrate along the deposition direction.

[0035] refer to Figure 3 There is an angle between the electron beam evaporation flow and the substrate surface to be deposited. In some cases, the angle is vertical, and a dense and uniform film layer is deposited on the substrate surface. However, in other cases, it is necessary to increase the specific surface area of ​​the film layer, enhance the electron and ion transmission of the film layer and other surface effects, so as to improve the surface and interface performance of the film layer.

[0036] In view of this, the embodiment of the present application introduces a base with a certain angle so that the angle between the electron beam evaporation flow and the surface to be deposited of the substrate is greater than 0 degrees and less than 90 degrees, and the material to be deposited is deposited on the surface to be deposited of the substrate along the deposition direction to obtain a porous membrane layer. The porous membrane layer is used to enhance the efficiency of ion and electron transmission, thereby improving the surface and interface performance of the porous membrane layer material.

[0037] Figure 4 A schematic flow chart of a method for manufacturing a porous membrane layer provided in an embodiment of the present application. Figure 5 A side view of a partial structure inside a chamber of an electron beam evaporation / electron beam evaporation device provided in an embodiment of the present application. Figure 6 for Figure 5 Schematic cross-sectional view of part of the structure inside the chamber. Figure 7 for Figure 6 An enlarged schematic diagram of the angular relationship between the planetary disk and the substrate, and the angular relationship between the substrate and the electron beam evaporation flow.

[0038] In a first aspect, the present invention provides a method for manufacturing a porous membrane layer, referring to Figure 4 , the manufacturing method comprises the following steps:

[0039] Step S101, providing a planetary carrier; the planetary carrier comprises a plurality of planetary disks and a base fixed on the planetary disks; the planetary disks revolve around the normal line of the planetary carrier and rotate around the normal line of the plane where the planetary disks are located; the base comprises a first surface and a second surface arranged opposite to each other; the first surface is in contact with the plane where the planetary disks are located; and a first angle is formed between the first surface and the second surface;

[0040] Step S102, fixing the substrate on the second surface;

[0041] Step S103, adjusting the first angle so that a second angle exists between the deposition plane of the substrate and the deposition direction of the material to be deposited; the second angle is greater than 0 degrees and less than 90 degrees;

[0042] Step S104, controlling the revolution speed and rotation speed of the planetary disk and controlling the deposition rate of the material to be deposited; depositing the material to be deposited on the deposition plane of the substrate along the deposition direction to form a porous membrane layer.

[0043] It should be understood that Figure 4 The steps shown in the operation are not exclusive, and other steps may be performed before, after or between any steps in the operation shown; Figure 4 The steps shown in the figure can be adjusted in order according to actual needs. Figure 4 , Figure 5 to Figure 7 The manufacturing process of the porous membrane layer provided in the embodiments of the present application is described in detail.

[0044] Execute step S101 to provide a planet carrier.

[0045] refer to Figure 5 Electron beam evaporation uses electrons generated by an electron source to accelerate the electrons to form an electron beam. The electron beam bombards the target material in the crucible. The kinetic energy of the electron beam is converted into heat energy to heat and evaporate the target material. In a high vacuum chamber, the evaporated target material (electron beam evaporation flow) is then deposited on the surface of the substrate to be deposited to form a film layer. Electron beam evaporation also includes a vacuum pump for achieving the vacuum degree of the chamber and a heating device for achieving temperature control of the chamber. Figure 5 The planet carrier rotation shown can be understood as Figure 6 The planetary disk shown rotates.

[0046] refer to Figure 6 The electron beam evaporation also includes a planetary frame, which is provided with a plurality of planetary disks and a base fixed on the planetary disks. The planetary disks revolve around the normal line of the planetary frame (also referred to as the revolution axis in this article) and rotate around the normal line of the plane where the planetary disks are located (also referred to as the rotation axis in this article).

[0047] refer to Figure 7 The side of the planetary disk close to the target material is used to fix the base; the base includes a first surface and a second surface arranged opposite to each other, and a first angle is formed between the first surface and the second surface; the first surface is in contact with the side of the planetary disk close to the target material, and the second surface is used to fix the substrate.

[0048] Step S102 and step S103 are executed to fix the substrate and adjust the first angle.

[0049] The substrate is fixed on the second surface and the first angle is adjusted so that a second angle exists between the deposition plane of the substrate and the deposition direction of the material to be deposited; the second angle is greater than 0 degrees and less than 90 degrees. Preferably, the second angle ranges from greater than 45 degrees to less than 90 degrees, greater than 60 degrees to less than 90 degrees, or greater than 75 degrees to less than 90 degrees. For example, the second angle can be 55 degrees, 60 degrees, 65 degrees, 70 degrees, 75 degrees, 80 degrees or 85 degrees.

[0050] In some embodiments, the plurality of planetary disks provided in the planetary carrier are located on at least a plurality of orbits, and the plurality of planetary disks located on the same orbit are rotationally symmetrical about the orbital axis. Figure 6 The first planetary disk and the second planetary disk on the same orbit are rotationally symmetrical around the orbital axis. In this way, the stability of the rotation of the planetary carrier and the planetary disk can be balanced, and at the same time, the multiple planetary disks on the same orbital orbit can be guaranteed to have a consistent deposition environment under the orbital state.

[0051] In some embodiments, since the planetary disks revolve and rotate at the same time, the multiple planetary disks arranged on the planetary frame can be set to have the same rotation speed. Furthermore, the substrate is fixed on the second surface, and the initial state of the base can be set (before the revolution and rotation start), that is, the bases on the several planetary disks respectively located on the same revolution orbit are set to be rotationally symmetrical around the revolution axis, so that after the revolution and rotation start, that is, in the dynamic state, the bases on the several planetary disks respectively located on the same revolution orbit are still rotationally symmetrical around the revolution axis. In this way, the stability of the rotation of the planetary frame and then the rotation of the planetary disk can be balanced, and at the same time, it is ensured that the several planetary disks on the same revolution orbit have a consistent deposition environment under the revolution and rotation state.

[0052] In some embodiments, the direction of the revolution of the planetary disk and the direction of the rotation of the planetary disk may be the same or opposite. For example, the direction of the revolution of the planetary disk and the direction of the rotation of the planetary disk are both clockwise.

[0053] In some embodiments, fixing the substrate on the second surface includes: rotating the substrate around the normal of the plane where the planetary disk is located, so that the normal of the second surface is rotationally symmetric around the normal of the planetary carrier. In some embodiments, the multiple planetary disks arranged on the planetary carrier are located on at least multiple orbits, and the multiple planetary disks located on the same orbit are rotationally symmetric around the orbital axis, and the bases on the multiple planetary disks respectively located on the same orbital orbit are rotationally symmetric around the orbital axis. For example, referring to Figure 8 and Fig. 9 The first base and the second base on the same orbit are rotationally symmetrical around the orbital axis. In this way, the rotation of the planetary disk can be balanced while the stability of the planetary disk rotation can be achieved. At the same time, in the dynamic state of rotation, it can also ensure that several planetary disks on the same orbit have a consistent deposition environment under the orbital and rotation states.

[0054] In some embodiments, the base includes a hinge structure connecting the first surface and the second surface. Figure 7(not shown); adjusting the first angle, including: adjusting the hinge structure so that the first angle is adjustable between greater than 0 degrees and less than 90 degrees. When the angle of the base has a certain adjustable space, the angle between the electron beam and the wafer can be accurately controlled, that is, the appropriate second angle can be obtained by adjusting the first angle of the base. The range of the first angle is greater than 0 degrees and less than or equal to 45 degrees, greater than 0 degrees and less than or equal to 30 degrees, or greater than 0 degrees and less than or equal to 15 degrees. For example, the first angle can be 35 degrees, 30 degrees, 25 degrees, 20 degrees, 15 degrees, 10 degrees or 5 degrees.

[0055] It should be noted that, in an ideal case, for example, when the substrate on the base is flat, the deposition plane of the substrate is parallel to the second surface of the base, then the first angle and the second angle are complementary angles, that is, the sum of the first angle and the second angle is equal to 90 degrees. Exemplarily, the hinge structure is adjusted so that the first angle is 30 degrees, and the second angle is 60 degrees, or the hinge structure is adjusted so that the first angle is 15 degrees, and the second angle is 75 degrees.

[0056] Step S104 is executed to control process parameters to form a porous membrane layer.

[0057] The process parameters at least include the revolution speed of the planetary disk, the rotation speed of the planetary disk and the deposition rate of the material to be deposited. The process parameters may also include the vacuum degree and temperature of the chamber.

[0058] Fig. 10A , Fig. 10B and Fig. 10C Schematic diagram of the manufacturing process of forming a porous membrane layer. Fig. 10A , a pedestal with an adjustable first angle is introduced, and a second angle is formed between the electron beam evaporation flow and the surface of the substrate to be deposited. After the deposit is deposited on the substrate, it has a shielding effect on the electron beam evaporation flow, forming a shadow effect. Fig. 10B , the deposits are deposited and grow on the substrate, and gradually grow larger. Due to the shadow effect, a shadow gap is formed behind the side of the deposits facing away from the electron beam evaporation flow, and the shadow gap is not occupied by the deposits. Fig. 10C As the sediments grow, the shadow gaps gradually take shape. Fig. 10C In some embodiments, the deposit spirally rises and gradually grows, and its spiral rise angle β is positively correlated with the second angle α. For example, tanα=2tanβ. In some embodiments, the spiral rise angle β and the second angle α can be detected by a scanning electron microscope (SEM).

[0059] By designing the process parameters, a porous membrane layer with spiral, gradient, and radial changes can be obtained. The specific structure of the porous membrane layer is closely related to the second angle, rotation speed, revolution speed, deposition rate, vacuum degree of the chamber, temperature, etc. The slower the rotation speed, the larger the inclination angle, and the specific structure of the porous membrane layer is a spiral structure; the faster the rotation speed, the smaller the inclination angle, and the specific structure of the porous membrane layer is a gradient radial structure.

[0060] In some embodiments, the control includes the revolution speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, including: the smaller the rotation speed of the planetary disk and the larger the second angle, the porous membrane layer formed includes a spiral structure; the spiral structure is obtained by growing along the spiral rising curve; or, the larger the rotation speed of the planetary disk and the smaller the second angle, the porous membrane layer formed includes a gradient radial structure; the gradient radial structure is obtained by axial growth. It should be noted that the direction of the spiral rising curve can be understood as the growth direction of the spiral structure (similar to a spiral rising curve); the axial direction can be understood as the growth direction of the gradient radial structure (similar to a straight line), the radial direction is a direction in a plane perpendicular to the axial direction, and the radial size is the size of the gradient radial structure in a plane perpendicular to the axial direction.

[0061] In some embodiments, the control includes the orbital speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, including: controlling the rotation mode to be an intermittent mode; the intermittent mode includes the duration and interval of the rotation; the duration is less than the interval shown.

[0062] In some embodiments, the mode of controlling the rotation is an intermittent mode, including: the rotation speed range is 0.5rpm to 2rpm, the duration range is 1s to 5s, and the interval range is 6s to 24s; controlling the deposition rate of the material to be deposited includes: controlling the deposition rate range is Adjusting the first angle includes: making the range of the second angle greater than or equal to 70 degrees and less than 90 degrees.

[0063] For example, the second angle is 75 degrees; the rotation mode is intermittent mode, the rotation speed is 1 rpm, the duration is 3 seconds, and the interval is 16 seconds; the deposition rate is The obtained porous membrane layer has a spiral structure.

[0064] In some embodiments, the helical structure includes a helix angle; the helix angle ranges from 15 degrees to 75 degrees. Preferably, the helix angle ranges from 30 degrees to 60 degrees, for example, the helix angle can be 35 degrees, 40 degrees, 45 degrees, 50 degrees or 55 degrees.

[0065] refer to Fig.11, the spiral structure is located on the surface to be deposited on the substrate, and the spiral structure includes a spiral body, a first shadow void and a second shadow void; the spiral body is formed by a sediment (a physical structure after the deposition of the material to be deposited); the first shadow void is the void space between different spiral bodies; the second shadow void is the void space of the spiral body itself. For example, the spiral structure includes adjacent first and second spiral bodies, and there is a first shadow void between the first and second spiral bodies, and the first and second spiral bodies themselves have second shadow voids respectively. The first and second shadow voids of the spiral structure contribute to the porosity of the porous membrane layer; wherein, the spiral bodies have different morphologies, and the void spaces of the first and second shadow voids formed by them are different. Different porosities of the porous membrane layer can be achieved by controlling the formation of spiral bodies of different morphologies. In some embodiments, the size of the first shadow void and the size of the second shadow void can be obtained by scanning electron microscopy (SEM) detection.

[0066] In some embodiments, the control includes the revolution speed and rotation speed of the planetary disk and the control of the deposition rate of the material to be deposited, including: controlling the rotation mode to be a continuous mode.

[0067] In some embodiments, the mode of controlling the rotation is a continuous mode, including: the rotation speed range is greater than or equal to 15rpm; controlling the deposition rate of the material to be deposited, including: controlling the deposition rate range is 4nm / min to 8nm / min; adjusting the first angle, including: making the range of the second angle greater than or equal to 55 degrees and less than 90 degrees.

[0068] Exemplarily, the second angle is 60 degrees; the rotation mode is continuous mode, and the rotation speed is 20 rpm; the deposition rate is 6 nm / min, and the obtained porous membrane layer is a gradient radial structure.

[0069] In some embodiments, the gradient radial structure includes a plurality of gradient radial bodies extending along the axial direction and a connecting portion between two adjacent gradient radial bodies; a radial dimension of the two adjacent gradient radial bodies is greater than a radial dimension of the connecting portion.

[0070] refer to Fig.12 There is a connecting portion between the adjacent first gradient radial bodies and the second gradient radial bodies, the connecting portion, the first gradient radial body and the second gradient radial body extend along the axial direction, and respectively have a third radial dimension, a first radial dimension and a second radial dimension, wherein the first radial dimension and the second radial dimension are both larger than the third radial dimension.

[0071] refer to Fig.12, the gradient radial structure is located on the surface to be deposited of the substrate, and the gradient radial structure includes a gradient radial body, a first shadow void and a second shadow void; the gradient radial body is formed by a sediment (a physical structure after the deposition of the material to be deposited); the first shadow void is the void space between different gradient radial bodies; the second shadow void is the void space of the gradient radial body itself. For example, the gradient radial structure includes adjacent first gradient radial bodies and second gradient radial bodies, and there is a first shadow void between the first gradient radial body and the second gradient radial body, and the first gradient radial body and the second gradient radial body themselves have second shadow voids respectively. The first shadow voids and the second shadow voids of the gradient radial structure contribute to the porosity of the porous membrane layer; wherein, the gradient radial bodies have different morphologies, and the void spaces of the first shadow voids and the second shadow voids formed therein are different. Different porosities of the porous membrane layer can be achieved by controlling the formation of gradient radial bodies of different morphologies.

[0072] In some embodiments, the material to be deposited may include a metal / alloy, an oxide, a carbide, or a nitride. The material to be deposited may be a metal / alloy, such as aluminum (Al), copper (Cu), titanium (Ti), tungsten (W), nickel (Ni), gold (Au), and alloys thereof. The material to be deposited may be an oxide, such as titanium oxide (TiO 2 ), aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO) or hafnium oxide (HfO 2 The material to be deposited can be a carbide or a nitride, such as titanium carbide (TiC), silicon carbide (SiC), titanium nitride (TiN), silicon nitride (Si 3 N 4 ) or aluminum nitride (AlN).

[0073] In some embodiments, the porosity of the porous membrane layer ranges from greater than zero to less than or equal to 1.2%. Preferably, the porosity of the porous membrane layer ranges from greater than zero to less than or equal to 1.0%. For example, the porosity of the porous membrane layer may be 0.1%, 0.2%, 0.4%, 0.6% or 0.8%. In some embodiments, the porosity of the porous membrane layer may be detected by the adsorption-desorption curve of nitrogen.

[0074] In some embodiments, the porous film layer can be understood as a film layer with a porous structure, which can be applied in the fields of chip manufacturing, sensing, energy, etc., for example, to form a metal film, an optical film, an insulating layer, etc. with a porous structure. For example, compared with a dense metal film, a metal film with a porous structure can be used to form the interconnection components of a chip. The interconnection components with a porous structure can improve or reduce the difference in the coefficient of thermal expansion (CTE) between the interconnection components (such as copper) and the substrate (such as glass), and can reduce or avoid problems such as reduced device reliability and chip failure caused by abnormal overlap due to swelling of the interconnection components. For example, compared with a dense optical film, an optical film with a porous structure is beneficial to improving the transmittance of the optical film. For example, compared with a dense insulating layer, the surface and interface performance of the insulating layer with a porous structure is improved, and it can have a higher etching rate, which can be applied to the process scenarios of differential filling or etching.

[0075] In a second aspect, an embodiment of the present application provides a packaging substrate, which includes a porous membrane layer, and the porous membrane layer is obtained by any one of the manufacturing methods provided in the first aspect.

[0076] The porous membrane layer of the packaging substrate provided in the embodiment of the present application is similar to the porous membrane layer obtained by the manufacturing method of the porous membrane layer in the embodiments of the first aspect mentioned above. For the technical features not fully disclosed in the embodiments of the present application, please refer to the above embodiments for understanding, and no further details will be given here.

[0077] In a third aspect, an embodiment of the present application provides a chip, wherein a packaging substrate of the chip includes a porous membrane layer; the porous membrane layer is obtained by any one of the manufacturing methods provided in the first aspect.

[0078] The porous membrane layer possessed by the packaging substrate of the chip provided in the embodiment of the present application is similar to the porous membrane layer obtained by the manufacturing method of the porous membrane layer in the embodiments of the first aspect mentioned above. For the technical features not fully disclosed in the embodiments of the present application, please refer to the above embodiments for understanding, and no further details will be given here.

[0079] Each embodiment of the present application introduces a base with an adjustable first angle to fix the substrate; adjusts the first angle of the base so that the angle between the electron beam evaporation flow and the surface to be deposited of the substrate has a second angle greater than 0 degrees and less than 90 degrees; by controlling the revolution speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, the material to be deposited is deposited on the surface to be deposited of the substrate along the deposition direction to obtain a porous film layer; the porous film layer is used to enhance the ion and electron transmission efficiency, thereby improving the surface and interface performance of the porous film layer material.

[0080] The above description is only a preferred implementation mode of the present application, and does not limit the protection scope of the present application. All equivalent structural changes made by using the contents of the present application specification and drawings under the inventive concept of the present application, or directly / indirectly applied in other related technical fields are included in the protection scope of the present application.

Claims

1. A method for manufacturing a porous membrane layer, characterized in that: include: Provide planet carrier; The planet carrier includes a plurality of planetary disks and a base fixed on the planetary disks; The planetary disk revolves around the normal line of the planetary carrier and rotates around the normal line of the plane where the planetary disk is located; the base includes a first surface and a second surface that are arranged opposite to each other; the first surface is in contact with the plane where the planetary disk is located; and there is a first angle between the first surface and the second surface; fixing a substrate on the second surface; Adjusting the first angle so that a second angle exists between the deposition plane of the substrate and the deposition direction of the material to be deposited; the second angle is greater than 0 degrees and less than 90 degrees; Controlling the revolution speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited; The material to be deposited is deposited on the plane to be deposited of the substrate along the deposition direction to form the porous membrane layer.

2. The manufacturing method according to claim 1, characterized in that: The porosity of the porous membrane layer is in the range of greater than zero and less than or equal to 1.2%.

3. The manufacturing method according to claim 2, characterized in that: The control includes the revolution speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, including: The smaller the rotation speed of the planetary disk is controlled, the larger the second angle is controlled, and the formed porous membrane layer includes a spiral structure; the spiral structure is obtained by growing along a spiral ascending curve; or, The larger the rotation speed of the planetary disk is controlled, the smaller the second angle is controlled, and the formed porous membrane layer includes a gradient radial structure; the gradient radial structure is obtained by axial growth.

4. The manufacturing method according to claim 3, characterized in that: The control includes the orbital speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, including: controlling the rotation mode to be an intermittent mode; the intermittent mode includes the duration and interval of the rotation; the duration is less than the interval shown.

5. The manufacturing method according to claim 4, characterized in that: The mode of controlling the rotation is an intermittent mode, including: the rotation speed range is 0.5rpm to 2rpm, the duration range is 1s to 5s, and the interval range is 6s to 24s; The controlling of the deposition rate of the material to be deposited comprises: controlling the deposition rate to be within a range of The adjusting the first angle includes: making the range of the second angle greater than or equal to 70 degrees and less than 90 degrees.

6. The manufacturing method according to claim 5, characterized in that: The helix angle; the helix angle of the helical structure ranges from 15 degrees to 75 degrees.

7. The manufacturing method according to claim 3, characterized in that: The control includes the revolution speed and rotation speed of the planetary disk and the deposition rate of the material to be deposited, including: controlling the rotation mode to be a continuous mode.

8. The manufacturing method according to claim 7, characterized in that: The mode of controlling the self-rotation is an intermittent mode, including: the self-rotation speed range is greater than or equal to 15 rpm; The controlling the deposition rate of the material to be deposited includes: controlling the deposition rate to be in the range of 4 nm / min to 8 nm / min; The adjusting the first angle includes: making the second angle range greater than or equal to 55 degrees and less than 90 degrees.

9. The manufacturing method according to claim 8, characterized in that: The gradient radial structure comprises a plurality of gradient radial bodies extending in the axial direction and a connecting portion between two adjacent gradient radial bodies; the radial size of the two adjacent gradient radial bodies is greater than the radial size of the connecting portion.

10. The manufacturing method according to claim 1, characterized in that: Fixing the substrate on the second surface includes: rotating the substrate around the normal line of the plane where the planetary disk is located, so that the normal line of the second surface is rotationally symmetric around the normal line of the planetary carrier.

11. A packaging substrate, characterized in that: It comprises a porous membrane layer, and the porous membrane layer is obtained by the manufacturing method according to any one of claims 1 to 10.

12. A chip, characterized in that: The packaging substrate of the chip comprises a porous membrane layer; the porous membrane layer is obtained by the manufacturing method according to any one of claims 1 to 10.

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