Material layer deposition method, semiconductor processing system and computer program product

Abstract

A material layer deposition method includes flowing a silicon-containing material layer precursor through a chamber body and forming a silicon-containing deposit within the chamber body. A chlorine (Cl2)-containing filler is introduced into the chamber body, at least a portion of the silicon-containing deposit is removed using the chlorine (Cl2)-containing filler, and the chlorine (Cl2)-containing filler and the silicon-containing etchant product are removed from the chamber body. A semiconductor processing system and a computer program product are also described.

Description

Technical Field

[0001] The present disclosure relates generally to depositing a material layer onto a substrate. More particularly, the present disclosure relates to removing silicon-containing deposits from within a semiconductor processing system that are formed during deposition of a material layer onto a substrate supported within the semiconductor processing system. Background Art

[0002] Material layers are typically deposited onto a substrate during the manufacture of semiconductor devices (e.g., logic and memory semiconductor devices). Material layer deposition is typically accomplished by supporting the substrate within a reaction chamber, heating the substrate to a desired material layer deposition temperature, and exposing the substrate to a flow of one or more material layer precursors under selected environmental conditions to deposit the material layer onto the substrate. Once the material layer has formed the desired one or more properties, the flow of the material layer precursors to the substrate is stopped and the substrate is removed from the reaction chamber for further processing, which is suitable for semiconductor devices formed using the material layer.

[0003] In some material layer deposition operations, deposition of the material layer onto the substrate may be accompanied by incidental deposition accumulation within the reaction chamber. For example, incidental deposition may accumulate on internal structures within the reaction chamber, such as on a substrate support structure disposed within the reaction chamber and used to support the substrate during deposition of the material layer onto the substrate. Incidental deposition may alternatively (or additionally) accumulate on internal surfaces of the reaction chamber, such as on internal surfaces of the reaction chamber defining a processing environment containing the substrate. And incidental deposition may accumulate within gaps defined between mechanical components within the reaction chamber, such as between a substrate support and a structure for placing a substrate on and removing the substrate from the substrate support. In some material layer deposition operations, such incidental deposition may limit the reliability of the reaction chamber used for the material layer deposition operation.

[0004] There are various countermeasures to limit the impact of incidental deposition on the reliable operation of a reaction chamber used for material layer deposition. For example, internal structures can be removed from the reaction chamber and incidental deposition can be removed using ex-situ removal techniques, such as by mechanical removal and / or immersion of the structure in an acid bath. In-situ removal techniques can be used to clean the interior and internal structures of the reaction chamber, such as by flowing an etchant through the reaction chamber after removing the substrate from the reaction chamber and before a continuous material layer deposition technique, such as by flowing hydrochloric acid through the reaction chamber to remove incidental deposition that accumulates in the reaction chamber during material layer deposition. Although generally satisfactory for their intended purposes, ex-situ and in-situ cleaning techniques increase the cost of ownership and / or limit the throughput of reaction chambers used for material layer deposition, typically in a manner commensurate with the amount of hydrochloric acid used and the duration of the cleaning event.

[0005] Such systems and methods are generally satisfactory for their intended purposes. However, there remains a need for improved material layer deposition methods, semiconductor processing systems, and computer program products for depositing a material layer onto a substrate. The present disclosure provides a solution to this need. Summary of the invention

[0006] A material layer deposition method is provided. A material layer deposition method includes flowing a silicon-containing material layer precursor through a chamber body and forming a silicon-containing accumulation in the chamber body. A chlorine-containing (Cl2) filler is introduced into the chamber body, at least a portion of the silicon-containing accumulation is removed using the chlorine-containing (Cl2) filler, and the chlorine-containing (Cl2) filler and a silicon-containing etchant product are removed from the chamber body.

[0007] In addition to or instead of one or more of the features described above, other examples of the method may include: supporting a substrate within a chamber body prior to flowing a silicon-containing material layer precursor through the chamber body; exposing the substrate to the silicon-containing material layer precursor while the silicon-containing material layer precursor flows through the chamber body; depositing a silicon-containing material layer onto the substrate using the silicon-containing material layer precursor; and removing the substrate from the chamber body prior to introducing a chlorine-containing gas (Cl2) fill into the chamber body.

[0008] In addition to or in lieu of one or more of the features described above, other examples of the method may include mixing hydrogen (H2) with the silicon-containing material layer precursor before flowing the silicon-containing material layer precursor through the chamber body. Flowing the silicon-containing material layer precursor through the chamber body may include flowing the silicon-containing material layer precursor mixed with hydrogen (H2) through the chamber body.

[0009] In addition to or in lieu of one or more of the features described above, other examples of the method may include increasing the pressure within the chamber body from about 5 Torr to about 100 Torr during the introduction of the chlorine (Cl 2 ) containing gas fill.

[0010] In addition to or in lieu of one or more of the features described above, other examples of the method may include forming the silicon-containing deposits includes forming the silicon-containing deposits on a quartz surface within the chamber body. Etching at least a portion of the silicon-containing deposits may include at least partially removing the silicon-containing deposits from the quartz surface within the chamber.

[0011] In addition to or in lieu of one or more of the features described above, other examples of the method may include forming the silicon-containing deposits including forming the silicon-containing deposits on exposed silicon carbide surfaces within the chamber body. Etching at least a portion of the silicon-containing deposits may include at least partially removing the silicon-containing deposits from the silicon carbide surfaces within the chamber body.

[0012] In addition to one or more of the features described above, or as an alternative, other examples of the method may include that introducing a chlorine-containing gas (Cl2) fill into the chamber body may include: flowing nitrogen (N2) through the interior of the chamber body; purging the interior of the chamber body with nitrogen (N2); separating the interior of the chamber body from an emission source fluid; and introducing a chlorine-containing gas (Cl2) fill into the interior of the chamber body while the chamber body is separated from the emission source fluid.

[0013] In addition to or in lieu of one or more of the features described above, other examples of the method may include introducing a chlorine (Cl2)-containing fill into the chamber body including increasing the pressure within the interior of the chamber body from a first pressure at the beginning of introducing the chlorine (Cl2)-containing fill to a second pressure at the end of introducing the chlorine (Cl2)-containing fill.

[0014] In addition to or in lieu of one or more of the above features, other examples of the method may include flowing the silicon-containing material layer precursor through the chamber body including flowing the silicon-containing material layer precursor through the interior of the chamber body using a laminar flow pattern. Introducing a chlorine-containing gas (Cl2) fill into the chamber body may include circulating the chlorine-containing gas (Cl2) fill within the chamber body using a turbulent flow pattern.

[0015] In addition to or in lieu of one or more of the features described above, other examples of the method may include rotating a substrate support disposed within a chamber body during etching at least a portion of a silicon-containing deposit with a chlorine (Cl2)-containing fill. No substrate may be positioned on the substrate support during rotation of the substrate support within the chamber body.

[0016] In addition to or in lieu of one or more of the features described above, other examples of the method may include: reducing a temperature of a chamber body while introducing a chlorine (Cl2)-containing fill into the chamber body, and etching at least a portion of a silicon-containing deposit using the chlorine (Cl2)-containing fill; and reducing a temperature of a substrate support disposed within the chamber body while introducing a chlorine (Cl2)-containing fill into the chamber body, and etching at least a portion of the silicon-containing deposit using the chlorine (Cl2)-containing fill.

[0017] In addition to or in lieu of one or more of the features described above, other examples of the method may include the silicon-containing deposits being retained on the interior surface of the upper wall of the chamber body. The temperature of the chamber body (e.g., a transparent material forming the chamber body) may be lowered more slowly than the temperature of the substrate support to limit etching of the silicon carbide coating of the substrate support by the chlorine (Cl2)-containing gas fill during etching of the silicon-containing deposits.

[0018] In addition to or in lieu of one or more of the features described above, other examples of the method may include maintaining a temperature differential between about 140 degrees Celsius and about 175 degrees Celsius between the chamber body and a substrate support disposed within the chamber body during introducing a chlorine (Cl2)-containing fill into the chamber body and etching at least a portion of the silicon-containing deposit using the chlorine (Cl2)-containing fill.

[0019] In addition to or in lieu of one or more of the features described above, other examples of the method may include reducing the temperature of the chamber body to between about 275 degrees Celsius and about 400 degrees Celsius during introducing a chlorine (Cl2)-containing fill into the chamber body and etching at least a portion of the silicon-containing deposit with the chlorine (Cl2)-containing fill.

[0020] In addition to or in lieu of one or more of the features described above, other examples of the method can include reducing the temperature of a substrate support (e.g., a silicon carbide coating covering a bulk graphite material) disposed within the chamber body to between about 400 degrees Celsius and about 575 degrees Celsius during introduction of a chlorine (Cl2)-containing fill into the chamber body and etching at least a portion of a silicon-containing deposit using the chlorine (Cl2)-containing fill.

[0021] In addition to or in lieu of one or more of the features described above, other examples of the method may include introducing a chlorine (Cl2)-containing fill into the chamber body including: mixing the chlorine (Cl2) with nitrogen (N2); and providing the mixed chlorine (Cl2) and nitrogen (N2) to the chamber body.

[0022] In addition to or in lieu of one or more of the features described above, other examples of the method may include introducing a chlorine (Cl2)-containing fill into the chamber body including introducing chlorine (Cl2) into the chamber body at between about 50 standard cubic centimeters per minute and about 500 standard cubic centimeters per minute while closing either (or both) of an isolation valve and a pressure control valve connecting the chamber body to an exhaust source.

[0023] In addition to or in lieu of one or more of the features described above, other examples of the method may include reducing (or stopping) an axial purge flow provided to a tube member extending around an axial member fixed to a lower wall of a chamber body and defining a gap therebetween. The axial member may extend through the tube member. The tube member may be rotationally fixed relative to a substrate support disposed within the chamber body and supported to rotate within the chamber body about an axis of rotation.

[0024] A semiconductor processing system is provided. The semiconductor processing system includes a first precursor source, a chlorine (Cl2) source, a chamber body, a substrate support, an exhaust source, and a controller. The first precursor source includes a silicon-containing material layer precursor, and the chlorine (Cl2) source includes chlorine (Cl2). The chamber body is formed of quartz and connected to the first precursor source and the chlorine (Cl2) source. The substrate support is arranged in the chamber body, is formed of a bulk graphite material, and has a silicon carbide coating. The exhaust source is connected to the chamber body through an isolation valve and a pressure control valve. The controller is operably connected to the semiconductor processing system and includes a memory having a non-transitory machine-readable medium having instructions recorded thereon, which, when read by the processor, causes the processor to: flow a silicon-containing material layer precursor from a first precursor source through a chamber body; form a silicon-containing accumulation within the chamber body using the silicon-containing material layer precursor; introduce a chlorine (Cl2)-containing gas fill from the chlorine (Cl2) source into the chamber body by closing either (or both) of an isolation valve and a pressure control valve; etch at least a portion of the silicon-containing accumulation with the chlorine (Cl2)-containing gas fill; and remove the chlorine (Cl2)-containing gas fill and the silicon-containing etchant product from the chamber body by opening either (or both) of the isolation valve and the pressure control valve.

[0025] In addition to or in lieu of one or more of the features described above, other examples of semiconductor processing systems can include a chlorine (Cl 2 ) containing gas fill accumulated within the interior of the chamber body.

[0026] A computer program product is provided. The computer program product includes: a non-transitory machine-readable medium having instructions recorded thereon, which, when read by a processor, causes the processor to: flow a silicon-containing material layer precursor through a chamber body; form a silicon-containing accumulation within the chamber body; introduce a chlorine-containing gas (Cl2) fill into the chamber body; etch at least a portion of the silicon-containing accumulation using the chlorine-containing gas (Cl2) fill; and remove the chlorine-containing gas (Cl2) fill and the silicon-containing etchant product from the chamber body.

[0027] In addition to or in lieu of one or more of the features described above, other examples of semiconductor processing systems can include a silicon-containing deposit and an exposed silicon carbide surface defining a chlorine (Cl 2 )-containing fill.

[0028] The present invention summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the examples of the following disclosure. The present invention summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] These and other features, aspects and advantages of the present invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate and not to limit the present invention.

[0030] Figure 1 is a schematic diagram of a semiconductor processing system according to the present disclosure, showing a precursor delivery apparatus for providing chlorine gas (Cl2) to a chamber apparatus to remove incidental deposition from the chamber apparatus;

[0031] Figure 2 Based on the example Figure 1 A schematic diagram of a semiconductor processing system showing a chlorine source and a nitrogen source connected to a chamber assembly to remove incidental deposition from within the chamber assembly;

[0032] Figure 3 Based on the example Figure 1 A schematic diagram of a chamber device showing the internal structure of the chamber device and a fluid conduit connecting the precursor delivery device to the chamber device;

[0033] Figures 4 to 7 According to the example of this disclosure Figure 1 A schematic diagram of a semiconductor processing system of FIG. 1 showing a chamber arrangement using a chlorine flow purge and subsequent etching between material layer deposition operations; and

[0034] Figures 8 to 14 is a block diagram of an example of a material layer deposition method showing operations of the material layer deposition method according to an illustrative and non-limiting example of the material layer deposition method.

[0035] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0036] Reference will now be made to the drawings, wherein like reference numerals represent similar structural features or aspects of the subject disclosure. For purposes of explanation and illustration, and not limitation, a partial view of a semiconductor processing system according to the present disclosure is shown in FIG. Figure 1 , and is generally indicated by the reference numeral 100. Figure 2-14 Other examples of semiconductor processing systems, computer program products, and material layer deposition methods or aspects thereof are provided in, as will be described. The systems and methods of the present disclosure may be used to remove silicon-containing buildup formed within a semiconductor processing system during deposition of a material layer onto a substrate supported in the semiconductor processing system, such as buildup formed on quartz surfaces and silicon carbide surfaces during deposition of a silicon-containing epitaxial material layer in a semiconductor processing system having a single wafer cross-flow chamber structure, although the present disclosure is generally not limited to epitaxial material layers or any particular chamber structure.

[0037] refer to Figure 1, a semiconductor processing system 100 is shown. The semiconductor processing system 100 generally includes a precursor delivery device 102, a chamber device 104, an exhaust source 106, and a controller 108. The precursor delivery device 102 is connected to the chamber device 104 through a precursor supply conduit 110, and is configured to provide a flow of a material layer precursor 10 to the chamber device 104. The chamber device 104 is configured to expose a substrate 2 supported therein to the material layer precursor 10 to deposit a material layer 4 onto the substrate 2, and is connected to the exhaust source 106 through an exhaust conduit 112. The exhaust source 106 is fluidically connected to an external environment 12 outside the semiconductor processing system 100, and is configured to transfer a flow of residual material layer precursors and / or reaction products 14 emitted by the chamber device 104 to the external environment 12, and may include one or more of a vacuum pump and a scrubber-like abatement device. In this regard, it is contemplated that the exhaust conduit 112 may have an isolation valve 114 and a pressure control valve 116 connected in series with each other and coupling the exhaust source 106 to the chamber device 104, wherein the isolation valve 114 is configured to fluidically separate the chamber device 104 from the exhaust source 106, and the pressure control valve 116 is configured to maintain a predetermined pressure within the chamber device 104 by throttling the mass flow through the chamber device 104.

[0038] The controller 108 is operably connected to the precursor delivery device 102 and the chamber device 104, such as via a wired or wireless link 118, and is configured to perform the material layer deposition method 300 ( Figure 8 In this regard, it is contemplated that the controller 108 is configured to (a) cause a silicon-containing material layer precursor, such as the first material layer precursor 16 ( Figure 2 ) flows through the chamber body 144 ( Figure 3 (b) forming a silicon-containing deposit 32 in the chamber body 144 (as shown); Figure 4 (c) introducing a chlorine-containing gas (Cl2) filler into the chamber body 144, such as a chlorine-containing gas (Cl2) filler 20 (such as Figure 6 (d) etching at least a portion of the silicon-containing deposit 32 using a chlorine-containing gas (Cl2) fill 20; and (e) removing the chlorine-containing gas (Cl2) fill and the silicon-containing etchant product from the chamber body 144. It is contemplated that the controller 108 can cooperate with a computer program product 200 to complete one or more of the above operations, and the computer program product 200 can include a non-transitory machine-readable medium, such as a memory having instructions recorded therein, which, when read by a processor included in the controller 108, causes the controller 108 to perform the above operations.

[0039] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. The substrate may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. The substrate may be in any form, such as (but not limited to) a powder, a plate, or a workpiece. Plate-like substrates may include wafers of various shapes and sizes, such as 300 mm wafers.

[0040] The substrate may be formed of a semiconductor material, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). The substrate may include a pattern or may be a blanket substrate without a pattern. For example, a substrate in powder form may be used in drug manufacturing. The porous substrate may include one or more polymers. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tool equipment, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0041] The continuous substrate can extend beyond the boundaries of the treatment chamber where the deposition process occurs. In some processes, the continuous substrate can be moved through the treatment chamber so that the process continues until the end of the substrate is reached. A continuous substrate can be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include thin sheets, nonwoven films, rolls, foils, nets, flexible materials, bundled continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or thin sheet on which one or more non-continuous substrates are mounted.

[0042] Reference Figure 2 , a precursor delivery device 102 according to an example of the present disclosure is shown. In the example shown, the precursor delivery device 102 includes a first precursor source 120, a second precursor source 122, and an etchant source 124. As shown and described herein, the precursor delivery device 102 also includes a diluent / carrier gas source 126, a chlorine (Cl2) source 128, and a nitrogen (N2) source 130. Although shown and described herein as having certain elements and a specific arrangement, it should be understood and appreciated that the precursor sources may include other elements and / or omit elements shown and described herein, or have a different arrangement than shown and described herein, and still be within the scope of the present disclosure.

[0043] The first precursor source 120 includes a first material layer precursor 16 and is configured to provide a first material layer precursor 16 flow to the chamber device 104. In this regard, it is conceivable that the first precursor source 120 is connected to the precursor supply conduit 110 via a first precursor supply valve 132. The first precursor supply valve 132 can be operably associated with the controller 108, for example, via a wired or wireless link 118, and can be a component of a mass flow controller (MFC) or a mass flow metering device. In this regard, the precursor delivery device 102 can be as shown and described in U.S. Patent No. 11,053,591 issued on July 6, 2021 by Ma et al., the contents of which are incorporated herein by reference in their entirety. In some examples, the first material layer precursor 16 may include a silicon-containing material layer precursor, such as a chlorinated silicon-containing material layer precursor and / or a non-chlorinated silicon-containing material layer precursor. Examples of suitable non-chlorinated silicon-containing materials include silane (SiH4) and disilane (S2H6). According to some examples, the first material layer precursor 16 may include a chlorinated silicon-containing material layer precursor. Examples of suitable chlorinated silicon-containing materials include dichlorosilane (SiH2Cl2) and trichlorosilane (HCl3Si). According to some examples, the first precursor source 120 may include two or more silicon-containing material layer precursors and still be within the scope of the present disclosure.

[0044] The second precursor source 122 is similar to the first precursor source 120 and is connected to the chamber device 104 via a second precursor supply valve 134 in this respect. It is contemplated that the second precursor source 122 further includes a second material layer precursor 22 and is configured to provide a flow of the second material layer precursor 22 to the chamber device 104 via the second precursor supply valve 134. In some examples, the second material layer precursor 22 may include a metallic material, such as germanium and / or gallium. According to some examples, the second material layer precursor 22 may include a dopant-containing material, such as a p-type dopant and / or an n-type dopant. Examples of suitable dopants include phosphorus (P), boron (B), and arsenic (As). According to some examples, the second material layer precursor 22 may include two or more of the aforementioned materials and still be within the scope of the present disclosure.

[0045] The etchant source 124 and the diluent / carrier gas source 126 are also similar to the first precursor source 120 and are connected to the precursor supply conduit 110 via an etchant supply valve 136 and a diluent / carrier gas supply valve 138, respectively. The etchant source 124 also includes an etchant 24 and is configured to provide a flow of the etchant 24 to the chamber device 104. In this regard, it is contemplated that the etchant 24 can be co-flowed to the chamber device 104 with either (or both) of the first material layer precursor 16 and / or the second material layer precursor 22, for example to provide selectivity in the deposition of the material layer 4 based on the composition of the exposed surface portion of the substrate 2. It is also contemplated that the etchant 24 can be provided to the chamber device 104 independently of either or both of the first material layer precursor 16 and the second material layer precursor 22, for example to supplement the use of a chlorine (Cl2)-containing fill 20 ( Figure 6 2). In some examples, the etchant 24 can include hydrochloric acid (HCl). It is contemplated that the diluent / carrier gas source 126 includes a diluent / carrier gas 26, such as hydrogen (H2) and / or nitrogen (N2), which can be co-flowed to the chamber arrangement 104 with one or more first material layer precursors 16 and second material layer precursors 22 and the etchant 24, which is suitable for the deposition technique employed.

[0046] The chlorine (Cl2) source 128 and the nitrogen (N2) source 130 are similar to the first precursor source 120 and are additionally configured to provide chlorine (Cl2) 28 and nitrogen (N2) 30 flows to the chamber arrangement 104. In this regard, it is contemplated that the chlorine (Cl2) source 128 is configured to provide the chlorine (Cl2) flow 28 to the chamber arrangement 104 through the chlorine supply valve 140 to form the chlorine (Cl2)-containing fill 20, and the nitrogen (N2) source 130 is configured to provide the nitrogen (N2) flow 30 to the chamber arrangement 104 through the nitrogen supply valve 142. Advantageously, the introduction of the chlorine (Cl2) source 128 in the precursor delivery device 102 enables the use of chlorine (Cl2) to clean the interior surfaces located within the chamber arrangement 104 at relatively low temperatures compared to cleaning techniques using hydrochloric acid (HCl). More advantageously, the inclusion of a nitrogen (N2) source 130 enables the chamber arrangement 104 to be purged prior to the introduction of chlorine (Cl2) into the chamber arrangement 104, displacing materials that react exothermically with the chlorine (Cl2), and after the nitrogen (N2) purge atmosphere is established within the chamber arrangement 104, improving temperature control within the chamber arrangement 104 during cleaning with chlorine (Cl2).

[0047] refer to Figure 3, a chamber apparatus 104 according to an example of the present disclosure is shown. In the example shown, the chamber apparatus 104 includes a chamber body 144, an injection flange 146, and an exhaust flange 148. The chamber apparatus 104 also includes an upper heater element array 150, a lower heater element array 152, a divider 154, and a substrate support 156. As shown and described herein, the chamber apparatus 104 also includes a support member 158, an axis member 160, a lift pin actuator 162, a tube member 164, and a lift and rotation module 166. Although shown and described herein as including specific elements and having a specific architecture, such as a single wafer cross-flow architecture, it should be understood and appreciated that in other examples of the present disclosure, the chamber apparatus 104 may include additional elements and / or exclude elements shown and described herein, as well as have a different architecture, and still be within the scope of the present disclosure.

[0048] The chamber body 144 includes an upper wall 168, a lower wall 170, a first side wall 172, and a second side wall 174. The upper wall 168 of the chamber body 144 extends longitudinally between an injection end 176 and a longitudinally opposite discharge end 178, and is formed of a transparent material 180. It is contemplated that the transparent material 180 is transparent to electromagnetic radiation within the infrared band, and the upper wall 168 thus transmits the radiant energy generated by the upper heater element array 150 to the interior 182 of the chamber body 144. Examples of suitable transparent materials include ceramic materials such as quartz, fused silica, and sapphire. The lower wall 170 of the chamber body 144 is similar to the upper wall 168 of the chamber body 144, also longitudinally spans the injection end 176 and the discharge end 178 of the chamber body 144, and is further separated from the upper wall 168 of the chamber body 144 by the interior 182 of the chamber body 144. It is contemplated that the first side wall 172 and the second side wall 174 are also similar to the upper wall 168 of the chamber body 144, with the first side wall 172 coupling the upper wall 168 to the lower wall 170 and the second side wall 174 also coupling the upper wall 168 to the lower wall 170, and are additionally separated by the interior 182 of the chamber body 144 through the first side wall 172. As shown and described herein, the upper wall 168 and the lower wall 170 are substantially planar, and the chamber body 144 also has a plurality of external ribs extending laterally around the exterior of the chamber body 144. In view of the present disclosure, those skilled in the art will appreciate that either (or both) of the upper wall 168 and the lower wall 170 can define an arcuate profile and / or a dome shape, and / or that the chamber body 144 lacks external ribs and still be within the scope of the present disclosure.

[0049] The upper heater element array 150 is supported above the upper wall 168 of the chamber body 144 and is configured to transfer radiant heat into the interior 182 of the chamber body 144, for example using electromagnetic radiation in the infrared band. In this regard, the upper heater element array 150 can include a plurality of filament-type lamps spaced from one another above the upper wall 168 of the chamber body 144. In some examples, the upper heater element array 150 can include a plurality of linear filament-type lamps extending laterally between the first side wall 172 and the second side wall 174 of the chamber body 144 and spaced longitudinally from one another between the injection end 176 and the discharge end 178 of the chamber body 144. The lower heater element array 152 can be similar to the upper heater element array 150, additionally supported below the lower wall 170 of the chamber body 144, and also include a plurality of linear filament-type lamps. A plurality of linear filament-type lamps may extend longitudinally between an injection end 176 and a discharge end 178 of the chamber body 144 and may be laterally spaced apart from one another between the first sidewall 172 and the second sidewall 174 of the chamber body 144. It is contemplated that either (or both) of the upper and lower heater element arrays 150, 152 may include bulb-type lamps and remain within the scope of the present invention.

[0050] The divider 154 is fixed within the interior 182 of the chamber body 144 and divides the interior 182 of the chamber body 144 into an upper chamber 184 and a lower chamber 186. It is contemplated that the divider 154 defines a divider hole 188 therethrough, which fluidly couples the upper chamber 184 to the lower chamber 186. It is contemplated that the divider 154 is formed of an opaque material 190, such as a material that is opaque to electromagnetic radiation in the infrared band, and that the substrate support 156 (e.g., a susceptor) is supported within the divider hole 188 for rotation R about a rotation axis 192. Examples of suitable opaque materials include ceramic materials, such as silicon carbide. Examples of suitable opaque materials also include carbonaceous materials, such as graphite and pyrolytic carbon.

[0051] The substrate support 156 is configured to support the substrate 2 during deposition of the material layer 4 thereon, for example using edge support techniques. It is contemplated that the substrate support 156 slidably receives a plurality of lift pins 194 therein for cooperating with the lift pin actuators 162 to position and remove the substrate 2 on the substrate support 156, and that the substrate support 156 is operably coupled to the lift and rotation module 166 via a support member 158 and an axis member 160. In this regard, it is contemplated that the support member 158 is disposed within the lower chamber 186 of the chamber body 144 and is rotationally fixed relative to the substrate support 156 along the axis of rotation 192, and couples the support member 158 to the axis member 160. The axis member 160 in turn extends through the lower wall 170 of the chamber body 144, is rotationally fixed relative to the support member 158, and operably couples the substrate support 156 to the lift and rotation module 166 via the support member 158. It is contemplated that either (or both) of the support member 158 and the shaft member 160 are formed of a transmissive material, such as the transparent material 180, and that the lift pin actuator 162 extends circumferentially around the shaft member 160 and defines a gap 113 between an interior surface of the shaft member 160 and an exterior surface of the shaft member 160. It is also contemplated that the substrate support 156 is formed of an opaque material, such as a monolithic graphite material coated with silicon carbide or pyrolytic carbon, and still be within the scope of the present disclosure.

[0052] The controller 108 includes a device interface 196, a processor 198, a user interface 101, and a memory 103. The device interface 196 connects the processor 198 to the wired or wireless link 118 and through it to other elements of the semiconductor processing system 100 (such as Figure 1 104). The processor 198 is operably connected to the user interface 101 to receive user input and / or provide user output therethrough, and is configured to communicate with the memory 103. The memory 103 has a plurality of program modules 105 recorded thereon, the program modules 105 containing instructions that cause the processor 198 to perform certain operations when read by the processor 198. These operations include the material layer deposition method 300 (such as Figure 8 The operation of the controller 100 is shown in FIG. 1 , which will be described below.

[0053] As described above, during some material layer deposition processes, deposits may form within the interior 182 of the chamber body 144. For example, silicon-containing deposits (e.g., silicon-containing deposits 32) may form on quartz surfaces within the interior 182 of the chamber body 144, such as on the interior surface 107 (e.g., exposed quartz surface) of the upper wall 168 of the chamber body 144. Once formed, such deposits may limit the reliability of the semiconductor processing system 100, such as by reducing the transmittance of the transparent material 180 forming the chamber body 144 and limiting the ability of the upper heater element array 150 to transfer radiant heat into the interior 182 of the chamber body 144. Silicon-containing deposits (e.g., silicon-containing deposits 34) may also form on structures located within the chamber body 144, such as on a silicon carbide surface of the substrate support 156 and / or on one or more of the plurality of lift pins 194. Once formed, such deposits may also limit the reliability of the semiconductor processing system 100, such as when the deposits form or are carried into mechanical gaps defined between components that would otherwise be free to move relative to each other.

[0054] One method of cleaning a chamber is to provide a flow of hydrochloric acid (HCl) to the chamber body 144 to etch silicon-containing deposits formed during deposition. Although generally effective for its intended purpose, in some semiconductor processing systems, hydrochloric acid (HCl) can limit reliability and / or increase the cost of ownership of the semiconductor processing system. In this regard, cleaning a chamber with hydrochloric acid (HCl) may require heating the cleaned chamber body to a relatively high temperature to be effective, such as to a temperature higher than that required for deposition of the material layer, which increases power consumption and imposes greater strain on chamber components than that associated with thermal cycling during processing. Hydrochloric acid (HCl) can also shorten the useful life of chamber consumables, such as by etching exposed silicon carbide coatings that otherwise require protection of the underlying bulk material and protection of the bulk material forming the structure. And the hydrochloric acid (HCl) acid itself imposes costs on semiconductor processing systems that use hydrochloric acid (HCl) acid for chamber cleaning, such as due to the cost of the hydrochloric acid (HCl) acid consumed during the cleaning process and the costs associated with reducing the hydrochloric acid (HCl) released by the chamber during the cleaning process (e.g., environmental costs). Furthermore, a majority of the HCl provided to the chamber may never contact (or etch) the silicon-containing deposits targeted for removal, but instead flows through the chamber and directly into the scrubber for removal and abatement.

[0055] To avoid one or more of the above disadvantages, the semiconductor processing system 100 ( Figure 1168) is configured to remove silicon-containing deposits from the chamber apparatus 104 using chlorine gas (Cl2). In this regard, the semiconductor processing system 100 is configured to maintain a temperature difference between the chamber body 144 and the internal structures within the chamber body 144, such as the temperature difference between the upper wall 168 and the substrate support 156, to limit the etching of the substrate support 156 by the chlorine gas (Cl2) used to remove silicon-containing deposits from the interior surface 107 of the upper wall 168 of the chamber body 144. On the other hand, the chlorine gas (Cl2) filling can be used for chamber cleaning, that is, the interior 182 of the chamber body 144 is filled or filled with chlorine gas (Cl2), while the exhaust source 106 ( Figure 1 ) fluid separation, relative to a cleaning technique where the etchant flows through the chamber body 144, limits the amount of etchant required for cleaning by increasing the residence time of chlorine (Cl2) gas provided to the chamber assembly 104.

[0056] Reference Figure 4-7 , showing the formation and subsequent removal of silicon-containing deposits from within the interior 182 of the chamber assembly 104. Figure 4 As shown, a silicon-containing deposit 32 may be formed within the chamber apparatus 104 as the material layer 4 is deposited onto the substrate 2 using a silicon-containing material layer precursor flowing through the chamber body 144. For example, the silicon-containing deposit 32 may be formed on a transparent material 180 that forms the interior surface 107 of the upper wall 168 of the chamber body 144. The silicon-containing deposit 34 may alternatively or additionally be formed on an opaque material 190 that forms one or more of the dividers 154, the substrate support 156, and / or the plurality of lift pins 194. As shown in FIG. Figure 5 As shown, the interior 182 of the chamber body 144 may thereafter be purged prior to removing the silicon-containing deposits 32 and / or the silicon-containing deposits 34, for example to remove materials that may react with the chlorine gas (Cl2) used to remove the silicon-containing deposits 32 and / or the silicon-containing deposits 34. Figure 6 As shown, the chlorine (Cl2)-containing fill 20 may then be introduced into the interior 182 of the chamber body 144, and the chlorine (Cl2) gas etches (and thereby removes) the silicon-containing deposits 32 and / or the silicon-containing deposits 34 from within the interior 182 of the chamber body 144. The introduction and / or etching of the chlorine (Cl2)-containing fill 20 may be accomplished with one or both of the isolation valve 114 and the PCV 116 closed, such that the chlorine (Cl2) gas 28 constituting the chlorine (Cl2)-containing fill 20 accumulates within the chamber body 144 during the etching of the silicon-containing deposits 42. Advantageously, closing the isolation valve 114 during the introduction of the chlorine (Cl2) 28 into the chamber body 144 allows the chlorine (Cl2) 28 to circulate within the interior 182 of the chamber body 144 according to the turbulence pattern 38, thereby filling the interior 182 of the chamber body 144 with the chlorine (Cl2) 28, increasing the mean free path to the exhaust end 178 of the chamber body 144, and limiting the amount of chlorine (Cl2) 28 required for cleaning. Figure 7 As shown, the chlorine (Cl 2 )-containing fill and silicon-containing etchant product 40 may thereafter be removed from the interior 182 of the chamber body 144 , for example by opening either (or both) of the isolation valve 114 and the PCV 116 to again expose the interior 182 of the chamber body 144 to the exhaust source 106 .

[0057] refer to Figure 4 , the placement can be achieved by, for example, the cooperation of a plurality of lift pins 194 and a lift pin actuator 162 in combination with a gate valve 109 and a substrate transfer robot 111. The substrate 2 is then heated to a predetermined material layer deposition temperature using either (or both) of the upper heater element array 150 and the lower heater element array 152, and a silicon-containing material layer precursor flows through the chamber body 144. According to certain examples of the present disclosure, the substrate 2 is supported within the chamber body 144 before the silicon-containing material layer precursor flows to the chamber body 144. It is contemplated that when the silicon-containing material layer precursor flows through the chamber body 144, the substrate 2 is exposed to the silicon-containing material layer precursor, and the environmental conditions within the chamber body 144 are maintained so that the material layer 4 is deposited onto the substrate 2 using the silicon-containing material layer precursor according to the epitaxial deposition technique. In this regard, it is contemplated that the pressure control valve 116 ( Figure 1 ) and emission source 106 ( Figure 1 ) and isolation valve 114 ( Figure 1 ) cooperates so that one or more vacuum pumps included in the exhaust source 106 maintain a predetermined material layer deposition pressure within the interior 182 of the chamber body 144.

[0058] Deposition of the material layer 4 may include the addition of a diluent / carrier gas such as diluent / carrier gas 26 (eg Figure 2 176 and 178 of the chamber body 144. The silicon-containing material layer precursor and the diluent / carrier gas 26 may be mixed with each other through the injection flange 146, and the mixture of the silicon-containing material layer precursor and the diluent / carrier gas 26 may thereafter flow through the chamber body 144. In certain examples of the present disclosure, the diluent / carrier gas 26 may include a material that reacts exothermically with chlorine (Cl2), such as hydrogen (H2) as a non-limiting example. The silicon-containing material layer precursor (and in certain examples, the silicon-containing material layer precursor mixed with the diluent / carrier gas 26) may flow through the upper chamber 184 of the chamber body 144 using a laminar flow pattern 36, such as based on a substantially uniform cross-sectional flow area defined within the upper chamber 184 between the injection end 176 and the discharge end 178 of the chamber body 144. In certain examples, an axis purge may be provided to the lower chamber 186 of the chamber body 144, such as using a diluent / carrier gas source 126 ( Figure 2 1 and 2. A flow of diluent / carrier gas 26 is provided via gap 113 defined between tube member 164 and shaft member 160 (shown in FIG. 1 ). According to certain examples, during deposition of material layer 4, the shaft purge may include (or consist of or consist essentially of) hydrogen (H2).

[0059] refer to Figure 5 , the interior 182 of the chamber body 144 may be purged before the substrate 2 is removed from the chamber body 144 ( Figure 1 As shown) and then fill the chlorine-containing gas (Cl2) 20 ( Figure 6 ) is introduced into the chamber body 144. In this regard, a flow of nitrogen (N2) 30 can be provided to the chamber assembly 104 and flowed through the interior 182 of the chamber body 144, for example using a precursor delivery assembly 102 (such as Figure 1 ). The interior 182 of the chamber body 144 can be purged with nitrogen (N2) 30, which displaces materials that may react with the chlorine (Cl2), such as from the diluent / carrier gas 26 (such as Figure 2 It is contemplated that the interior 182 of the chamber body 144 may be connected to the exhaust source 106 ( Figure 1 ) and one or more vacuum pumps included therein, while nitrogen (N2) 30 is provided to the chamber assembly 104, such as by closing either (or both) of the isolation valve 114 and the PCV 116 coupling the chamber assembly 104 to the exhaust source 106. It is also contemplated that a chlorine (Cl2)-containing fill 20 may be introduced into the chamber body 144 while the interior 182 of the chamber body 144 is fluidly isolated from the exhaust source 106 (and one or more vacuum pumps included therein).

[0060] refer to Figure 6 The introduction of the chlorine (Cl2) containing fill 20 into the chamber body 144 can be accomplished by providing a flow of chlorine (Cl2) 28 to the chamber assembly 104, for example, using the precursor delivery assembly 102 ( Figure 1 144). The chlorine (Cl2)-containing fill 20 may be introduced into the chamber body 144 at a flow rate within which the MFC device metering the chlorine (Cl2) flow into the chamber assembly 104 is accurate, for example, between about 50 standard cubic centimeters per minute and about 500 standard cubic centimeters per minute. The chlorine (Cl2)-containing fill 20 may be introduced into the chamber body 144 while the isolation valve 114 ( Figure 1 ) and PCV 116 (shown) coupling chamber body 144 to exhaust source 106 Figure 1 Any one (or both) of the exhaust sources 106 (as shown) is closed, whereby the interior 182 of the chamber body 144 is fluidly isolated from the one or more vacuum pumps included in the exhaust source 106.

[0061] The introduction of the chlorine (Cl2) containing fill 20 into the chamber body 144 can be accomplished by mixing the chlorine (Cl2) 28 with nitrogen (N2). In this regard, the chlorine (Cl2) source 128 ( Figure 2The chlorine gas (Cl2) 28 can be combined with the nitrogen (N2) source 130 ( Figure 2 As shown) of nitrogen (N2) 30 ( Figure 2 ) are mixed, and the mixed chlorine (Cl2) 28 and nitrogen (N2) 30 are delivered into the interior 182 of the chamber body 144 through the injection flange 146. In view of this disclosure, those skilled in the art will appreciate that this enables the concentration of the chlorine (Cl2)-containing fill 20 to be diluted ex situ, in addition to limiting the aforementioned thermal effects potentially associated with other types of diluent gases, such as hydrogen (H2).

[0062] In some examples of the present invention, introducing the chlorine (Cl2)-containing fill 20 into the chamber body 144 may include increasing the pressure within the chamber body 144. In this regard, it is contemplated that the pressure within the interior 182 of the chamber body 144 may be increased from a first pressure at the beginning of the introduction of the chlorine (Cl2)-containing fill 20 (e.g., after the substrate 2 is removed from the chamber body 144). Figure 1 The pressure in the chamber body 144 may be increased from a range between about 2 Torr and about 10 Torr to a range between about 75 Torr and about 125 Torr, such as from about 5 Torr to about 100 Torr, during the introduction of the chlorine (Cl2)-containing fill 20. During the introduction of the chlorine (Cl2)-containing fill 20, the pressure change in the chamber body 144 may be gradually increased, such as in a manner corresponding to a cumulative increase in the mass flow rate of chlorine (Cl2) gas provided to the chamber body 144, and during the introduction of the chlorine (Cl2)-containing fill 20, the pressure increases linearly with respect to time.

[0063] The temperature of the chamber apparatus 104 may be maintained within a range wherein the chlorine (Cl2) gas 28 introduced into the interior 182 of the chamber body 144 is used to etch silicon-containing deposits within the chamber body 144, such as the silicon-containing deposits 32 and the silicon-containing deposits 34, but does not decarburize silicon carbide surfaces of structures within the interior 182 of the chamber body 144, such as the separator 154, the substrate support 156, and one or more of the plurality of lift pins 196. In this regard, it is contemplated that the temperature of the transparent material 180 forming the chamber body 144 and the opaque material 190 forming the separator 154 and the substrate support 156 may be maintained between about 300 degrees Celsius and about 500 degrees Celsius while the chlorine (Cl2)-containing fill 20 resides within the chamber body 144. In this regard, during etching of the silicon-containing deposits 32, the temperature of the transparent material 180 forming the chamber body 144 (e.g., as measured by a pyrometer at an outer surface of the upper wall) can be maintained between about 250 degrees Celsius and about 400 degrees Celsius, such as between about 250 degrees Celsius and about 300 degrees Celsius, or between about 300 degrees Celsius and about 350 degrees Celsius, or even between about 350 degrees Celsius and about 400 degrees Celsius. During etching of the silicon-containing deposits 34, the temperature of the opaque material 190 forming the substrate support 156 (e.g., as measured by a thermocouple disposed within the chamber body 144 and adjacent to the substrate support 156) can be maintained between about 350 degrees Celsius and about 550 degrees Celsius, such as between about 350 degrees Celsius and about 425 degrees Celsius, or between about 425 degrees Celsius and about 500 degrees Celsius, or even between about 500 degrees Celsius and about 575 degrees Celsius. In view of the present disclosure, those skilled in the art will appreciate that temperatures within these ranges avoid the need to raise the temperature of the transparent material 180 and the opaque material 190 to the temperatures required for hydrochloric acid (HCl) to remove silicon-containing deposits, e.g., 1000 degrees Celsius or higher, thereby limiting the time required for chamber cleaning by eliminating the need to heat and subsequently cool the transparent material 180 and the opaque material 190.

[0064] The temperature within the chamber arrangement 104 may be reduced during the introduction of the chlorine (Cl2)-containing fill 20 into the chamber body 144 relative to the temperature during the unloading of the substrate 2 from the chamber body 144. For example, during the introduction of the chlorine (Cl2)-containing fill 20 into the chamber body 144 and during the etching of at least a portion of the silicon-containing deposits 32, the upper wall 168 ( Figure 3 The inner surface 107 (shown) Figure 3During the introduction of the chlorine (Cl2)-containing fill 20 into the chamber body 144 and during the etching of at least a portion of the silicon-containing deposit 32, the temperature of the upper and lower surfaces of the substrate support 156 can be reduced. In some examples, the substrate 2 can be unloaded from the chamber apparatus 104 when the chamber apparatus is above the temperature at which the cleaning is completed and below the temperature at which the material layer is deposited, for example, between about 500 degrees Celsius and about 650 degrees Celsius.

[0065] It is contemplated that a temperature differential is maintained between the chamber body 144 and a substrate support 156 disposed within the chamber body 144 during the introduction of the chlorine (Cl2) containing gas fill 20 and during the etching of at least a portion of the silicon containing deposits 32. For example, a temperature differential between about 140 degrees Celsius and about 175 degrees Celsius may be maintained between the chamber body 144 and the substrate support 156 during the introduction of the chlorine (Cl2) containing gas fill 20. In some examples, the temperature of the chamber body 144 may be reduced to between about 275 degrees Celsius and about 400 degrees Celsius relative to the substrate unloading temperature during the introduction of the chlorine (Cl2)-containing fill 20 and the etching of the silicon-containing deposit 32 with the chlorine (Cl2)-containing fill 20, and the temperature of the substrate support 156 may be reduced to between about 575 degrees Celsius and about 400 degrees Celsius relative to the substrate unloading temperature during the introduction of the chlorine (Cl2)-containing fill 20 and the etching of at least a portion of the silicon-containing deposit 32 with the chlorine (Cl2)-containing fill 20. To this end, the shaft purge provided to the gap between the tube member 164 and the shaft member 160 may be reduced (or stopped) or switched to a gas that does not react with the chlorine (Cl2) gas, for example, from hydrogen (H2) to nitrogen (N2). Advantageously, maintaining the temperature differential within these ranges enables the chlorine (Cl 2 ) 28 to etch (and thereby remove) silicon-containing deposits on the quartz and silicon carbide surfaces while preventing decarburization (and thereby damage) of exposed silicon carbide surfaces on structures within the interior 182 of the chamber body 144 .

[0066] It is contemplated that the chlorine (Cl2) 28 provided to the chamber assembly 104 can fill the interior 182 of the chamber body 144 and circulate within the chamber body using the turbulent flow pattern 38, although the laminar flow condition is promoted by the uniform effective flow area of ​​the chamber body 144 between the injection end 176 and the discharge end 178 of the chamber body 144. In this regard, at least a portion of the chlorine (Cl2) 28 forming the chlorine (Cl2)-containing fill 20 can be introduced into the chamber body 144 while either (or both) of the isolation valve 114 and the PCV 116 are closed, and no chlorine (Cl2) 28 is delivered to the pressure control valve 116 ( Figure 1During the interval (shown), at least a portion of the chlorine (Cl2) 28 enters the chamber assembly 104. In view of this disclosure, those skilled in the art will appreciate that introducing the chlorine (Cl2) 28 into the chamber body 144 in the turbulent flow mode 38 can improve the efficiency of the chlorine (Cl2) 28 by reducing the mean free path between the chlorine molecules forming the chlorine (Cl2)-containing fill 20, thereby improving the cleaning cycle time.

[0067] According to some examples, during etching of at least a portion of the silicon-containing deposits 32, the substrate support 156 can be rotated R within the chamber body 144 about the rotation axis 192 without a substrate being placed on the substrate support 156. In view of the present disclosure, those skilled in the art will also appreciate that rotating R the substrate support 156 can introduce further turbulence into the chlorine-containing gas (Cl2) fill 20, further improving the efficiency of cleaning and limiting the residence time of the chlorine (Cl2) gas at the substrate support 156, limiting the etching of the substrate support 156 by the chlorine-containing gas (Cl2) fill 20.

[0068] refer to Figure 7 , the removal of the chlorine (Cl2)-containing fill 20 and the silicon-containing etchant product 40 can be completed by opening either (or both) of the isolation valve 114 and the PCV 116. Opening either (or both) of the isolation valve 114 and the PCV 116 restores fluid communication between the interior 182 of the chamber body 144 and the exhaust source 106. The interior 182 of the chamber body 144 and the exhaust source 106 ( Figure 1 The restoration of fluid communication between the exhaust source 106 and the chamber body 144 enables the exhaust source 106 to draw the silicon-containing deposits 32 ( Figure 4 ) and silicon-containing deposits 34 ( Figure 4 The chamber arrangement 104 is thus ready for subsequent material deposition onto another substrate. In view of this disclosure, it will be appreciated by those skilled in the art that the isolation valve 114 and the pressure control valve 116 ( Figure 1 ) removing the residual chlorine-containing gas (Cl2) filling 20 can also remove the accumulated silicon-containing material from either (or both) of the isolation valve 114 and PCV116 and the exhaust conduit 112 (e.g., the system foreline), further improving the semiconductor processing system 100 ( Figure 1 The reliability of the

[0069] Reference Figure 8-12 , shows a material layer deposition method 300 according to an example of the present disclosure. Figure 8 As shown, method 300 includes flowing a silicon-containing material layer precursor, such as a first material layer precursor 16 ( Figure 2shown) flows through the chamber body 144 ( Figure 2 As shown in block 302, the method 300 also includes depositing a silicon-containing material layer onto the substrate, such as a material layer 4 ( Figure 1 ), and forming silicon-containing deposits, such as silicon-containing deposits 32 ( Figure 4 ), as shown in blocks 304 and 306. It is contemplated that method 300 may include flowing nitrogen (N2) through the chamber body, such as nitrogen (N2) 30 (as shown in FIG. Figure 5 As shown), to purge the chamber body, and the method also includes introducing a chlorine-containing gas (Cl2) filler into the chamber body, such as a chlorine-containing gas (Cl2) filler 20 (as shown). Figure 6 ), as shown in blocks 308 and 310. It is also contemplated that the chlorine (Cl2)-containing fill etches at least a portion of the silicon-containing deposits, and residual chlorine (Cl2) and silicon-containing etchant products are thereafter removed from the chamber body, such as residual chlorine (Cl2) and silicon-containing etchant products 40 (as shown in FIG. Figure 7 ), as shown in blocks 312 and 314. As shown by arrow 316, cleaning may be completed after each substrate is processed in the chamber body, such as in a clean after each substrate processing mode of operation. As shown in block 318, cleaning may be completed after processing more than one substrate in the chamber body, such as in a multiple substrate processing mode of operation.

[0070] like Fig. 9 As shown, flowing 302 the silicon-containing material layer precursor through the chamber body may include mixing the silicon-containing material layer with a hydrogen (H2)-containing carrier gas or diluent gas, such as diluent / carrier gas 26 (eg, Figure 2 ), and providing a mixture of a silicon-containing material layer precursor and hydrogen (H2) to the chamber body, as shown in block 320. Flowing 302 the silicon-containing material layer precursor through the chamber body may include flowing 302 the silicon-containing material layer precursor through the chamber body under laminar flow conditions, using a laminar flow pattern, such as laminar flow pattern 36 (such as Figure 4 ), flowing the silicon-containing material layer through the chamber body, as shown in block 322. Flowing 302 the silicon-containing material layer through the chamber body may include flowing a silicon-containing material layer precursor with an etchant (e.g., etchant 24 ( Figure 2 )) co-flows through the chamber body, as shown in block 324. In some examples, flowing 302 the silicon-containing material layer through the chamber body may include co-flowing the alloy component with a silicon-containing material layer precursor, such as the second material layer precursor 22 (e.g., Figure 2), as shown in block 326. In this regard, it is contemplated that the silicon-containing material layer precursor may be co-flowed with one or more of a germanium-containing material layer precursor and a dopant-containing material layer precursor, as shown in block 328. Non-limiting examples of suitable germanium-containing material layer precursors include germanium (GeH4). Non-limiting examples of suitable dopant-containing precursors include material layer precursors that include p-type or n-type dopants, such as arsenic (As), boron (B), and phosphorus (P).

[0071] Depositing 304 the silicon-containing material layer onto the substrate may include depositing the silicon-containing material using an epitaxial deposition technique, as shown in block 330. In this regard, the material layer 4 may be epitaxial (e.g., single crystalline) relative to a portion of the underlying substrate, as further shown in block 330. Depositing 304 the silicon-containing material layer onto the substrate may include depositing silicon germanium layers onto the substrate, as shown in block 332. Depositing 304 the silicon-containing material layer onto the substrate may include depositing a plurality of layers onto the substrate, such as alternating pairs of silicon material layers and silicon germanium material layers, also shown in block 332. In some examples, the material layer deposited onto the substrate may be used to form a semiconductor device having a three-dimensional (3D) architecture, as shown in block 334. Examples of 3D devices include 3D DRAM memory devices, finFET devices, and gate-all-around (GAA) devices.

[0072] like Fig.10 As shown, forming 306 the silicon-containing deposit within the chamber body may include forming the silicon-containing deposit on an exposed quartz surface within the chamber body, as shown in block 336. In this regard, it is contemplated that the silicon-containing deposit may be formed on an interior surface of one or more walls forming the chamber body, such as the upper wall 168 of the chamber body (e.g., Figure 3 ), also shown in block 336. For example, silicon-containing deposits may form on quartz surfaces within the chamber body, as shown in block 349. Silicon-containing deposits may form on interior surfaces of the upper wall of the chamber body, as shown in block 337. It is contemplated that etching 312 ( Figure 8 Removing silicon-containing deposits from a quartz surface within the chamber body may include removing the silicon-containing deposits from a quartz surface within the chamber body, as shown in block 339.

[0073] Forming 306 the silicon-containing accumulation within the chamber body may include forming the silicon-containing accumulation on structures disposed within the chamber body, as shown in block 338. In this regard, the silicon-containing accumulation may be formed on exposed silicon carbide surfaces within the chamber body, as shown in block 341. With respect to the example chamber apparatus shown and described herein, the silicon-containing accumulation may be formed on one or more of a substrate support, a plurality of lift pins, and a spacer, as shown in block 343. It is contemplated that etching 312 the silicon-containing accumulation using a chlorine (Cl2)-containing fill may include removing the silicon-containing accumulation from structures disposed within the interior of the chamber body, as shown in block 345. It is contemplated that the silicon-containing accumulation may be formed on exposed quartz surfaces and structures supported within the chamber body, and etching 312 the chamber body includes removing the accumulation from the quartz surfaces and structures supported within the interior of the chamber body, as shown in blocks 340 and 347. It is also contemplated that forming the silicon-containing accumulation may be formed (at least in part) during the same time interval that the silicon-containing layer is deposited onto the substrate, as shown in block 340.

[0074] like Fig.11 As shown, introducing nitrogen (N2) into the chamber body 308 may include introducing nitrogen (N2) from a nitrogen source, such as nitrogen (N2) source 130 (e.g., Figure 2 ) to provide nitrogen (N2) to the chamber body, as shown in block 342. The nitrogen (N2) may be provided through an injection port of the chamber body, such as injection port 176 of the chamber body (such as Figure 3 ) is introduced into the chamber body, as shown in block 344. Nitrogen (N2) can be introduced into the chamber body through a tube member connected to the chamber body, such as tube member 164 (as shown in block 344). Figure 3 ), as shown in block 346. Nitrogen (N2) can be introduced into the chamber body through the injection end of the chamber body and the tube member, as shown in blocks 344 and 346, and then flow through the chamber body to the exhaust device. After depositing the material layer on the substrate, nitrogen (N2) can be introduced into the chamber body, as shown in block 348. After removing the substrate from the chamber body, nitrogen (N2) can be introduced into the chamber body, as shown in block 350.

[0075] It is contemplated that no substrate is disposed within the chamber body during the flow of nitrogen (N2) through the chamber body, as shown in block 352. It is also contemplated that nitrogen (N2) is provided to the chamber body prior to introducing a chlorine (Cl2)-containing fill into the chamber body, as shown in block 354. It is also contemplated that the nitrogen (N2) establishes a purge atmosphere (e.g., an atmosphere free of materials that may react with the chlorine (Cl2)) within the chamber body by displacing residual silicon-containing material layer precursor and diluent / carrier gas from within the interior of the chamber body, as shown in blocks 356 and 358. In light of the present disclosure, one skilled in the art will appreciate that displacing residual materials that may react with the chlorine (Cl2), such as hydrogen (H2) resident within the chamber body, prior to introducing a chlorine (Cl2)-containing fill into the chamber body can limit thermal effects potentially associated with the residual hydrogen (H2), such as due to an exothermic reaction of the residual hydrogen (H2) with the chlorine (Cl2) provided to the chamber body.

[0076] like Fig.12 As shown, introducing 310 a chlorine (Cl 2 ) containing fill into the chamber body may include connecting the interior of the chamber body to an exhaust source, such as exhaust source 106 (eg, Figure 1 ) fluid separation, as shown in block 360. A chlorine-containing (Cl2) fill can be introduced into the interior of the chamber body while the chamber body is fluidly separated from the exhaust source, also shown in block 360. Fluid separation can be achieved by closing either (or both) of an isolation valve and a pressure control valve that couples the chamber body to the exhaust source via the pressure control valve, such as isolation valve 114 ( Figure 3 as shown) through the pressure control valve 116 ( Figure 3 ) coupling the chamber body to the exhaust source 106, as also shown in block 362. Fluid separation may include fluidly isolating the chamber body from a pressure control valve operably associated with the chamber body and configured to maintain a predetermined pressure within the interior of the chamber body, as also shown in block 362.

[0077] Introducing 310 a chlorine-containing gas (Cl2) filler into the chamber body may include increasing the pressure within the interior of the chamber body during the introduction process, as shown in block 364. In this regard, the pressure within the chamber body may increase from a first pressure at the beginning of introducing the chlorine-containing gas (Cl2) filler into the chamber body to a second pressure at the end of introducing the chlorine-containing gas (Cl2) filler into the chamber body, the second pressure being greater than the first pressure, also as shown in block 364. During the introduction of the chlorine-containing gas (Cl2) filler into the interior of the chamber body, the pressure within the chamber body may be gradually increased. In some examples, the pressure within the chamber body may increase according to a substantially linear function between the beginning of the introduction of the chlorine-containing gas (Cl2) filler and the end of the introduction of the chlorine-containing gas (Cl2) filler, as shown in block 366. According to some examples, the pressure within the chamber body may increase according to a substantially antilog function between the beginning of the introduction of the chlorine-containing gas (Cl2) filler and the end of the introduction of the chlorine-containing gas (Cl2) filler, as shown in block 368. In some examples, the pressure within the chamber body can be increased between about 5 Torr and about 100 Torr, as shown in block 370. For example, between the start of the introduction and the end of the introduction, the pressure can be increased between about 5 Torr and about 25 Torr, or between about 25 Torr and about 50 Torr, or between about 50 Torr and about 75 Torr, or even between about 75 Torr and about 100 Torr. Advantageously, increasing the pressure within these ranges enables cleaning of components downstream of the isolation valve 114, such as the pressure control valve 112, as the pressure increases with the chamber increasing the residence of the chlorine (Cl2) gas in the exhaust conduit due to the relatively small effective flow area relative to the chamber body 144.

[0078] Introducing 310 a chlorine (Cl 2 ) containing fill into the chamber body may include introducing chlorine (Cl 2 ), such as chlorine (Cl 2 ) 28 (e.g. Figure 2 The chlorine gas (Cl2) may be mixed with the diluent / carrier gas ex situ (e.g., outside the chamber body), and the mixture of chlorine gas (Cl2) and diluent / carrier gas is provided to the chamber body, also as shown at 374. It is contemplated that the diluent / carrier gas is different from the diluent / carrier gas mixed with the silicon-containing material layer precursor, such as diluent / carrier gas 26 (e.g., Figure 2 ), and in this regard, the diluent / carrier gas does not react with the chlorine (Cl2), as shown in block 376. In this regard, the chlorine (Cl2) can be mixed with nitrogen (N2), such as nitrogen (N2) 30 (as shown in FIG. Figure 2 ), as shown in block 378. In view of this disclosure, one skilled in the art will appreciate that ex situ mixing of chlorine (Cl2) and nitrogen (N2) limits (or eliminates) the tendency of chlorine (Cl2) to etch silicon carbide surfaces located near the injection end of the chamber body, such as separator 154 (e.g. Figure 3 shown).

[0079] In some examples, chlorine (Cl2) gas (or a mixture of chlorine (Cl2) and a diluent / carrier gas) can be introduced into the chamber body at a mass flow rate between about 50 standard cubic centimeters per minute (SCCM) and about 1000 SCCM, as shown in block 380. For example, chlorine (Cl2) can be provided to the chamber body at a flow rate between about 50 SCCM and about 200 SCCM, or between about 200 SCCM and about 400 SCCM, or even between about 400 SCCM and about 1000 SCCM. It is contemplated that chlorine (Cl2) can be introduced into the chamber body while either (or both) of the isolation valve and the pressure control valve that connect the chamber body to the exhaust source are closed, also as shown in block 380. It is also contemplated that during the introduction of the chlorine (Cl2)-containing fill into the chamber body, the mass flow rate of chlorine (Cl2) provided to the chamber body can be substantially constant and maintained within the scope of the present disclosure. Advantageously, flow rates within these ranges can provide sufficient chlorine (Cl2) quality during the limited time period available for cleaning while not requiring upgrades to abatement equipment used in chamber apparatus configured to use etchants such as hydrochloric acid (HCl) during deposition of material layers.

[0080] Introducing 310 a chlorine-containing gas (Cl2) fill into the chamber body may include flowing chlorine (Cl2) gas to form a chlorine-containing gas (Cl2) fill within the interior of the chamber body, as shown in block 382. A turbulent flow pattern, such as turbulent flow pattern 38 (e.g., Figure 6 384. In this regard, it is contemplated that the normal laminar flow pattern promoted by the substantially uniform effective flow area defined between the injection end and the discharge end of the upper chamber is disrupted by the closing of either (or both) of the isolation valve and the pressure control valve, and the turbulent flow pattern circulates the chlorine (Cl2) throughout the interior of the chamber body. In view of the present disclosure, those skilled in the art will appreciate that this increases the effective average path of the chlorine (Cl2) molecules introduced into the chamber body to the discharge end of the chamber body, increases the efficiency of cleaning and / or limits the total mass of chlorine (Cl2) required for cleaning, which is achieved by introducing the chlorine (Cl2) into a recess that is less accessible or less accessible (and thus susceptible to accumulation of silicon-containing deposits) when laminar flow conditions exist within the chamber body.

[0081] In some examples, during the introduction of the chlorine (Cl2)-containing fill and / or while the chlorine (Cl2)-containing fill resides within the chamber body, a substrate support disposed within the chamber body may be rotated, such as substrate support 156 ( Figure 3), which facilitates (or causes) the aforementioned turbulent flow pattern, as shown in block 386. According to certain examples, during the etching of the silicon-containing deposits, the substrate support can be rotated, also as shown in block 386. It is contemplated that during the rotation of the substrate support, the substrate can be placed on the substrate support, taking advantage of the non-planar shape of the upper surface of the substrate support to further promote turbulence of the chlorine-containing gas (Cl2) fill within the chamber body, such as after stopping the flow of chlorine (Cl2) gas into the chamber body and before opening either (or both) of the isolation valve and the pressure control valve, as shown in block 388.

[0082] like Fig.13 As shown, etching 312 the silicon-containing accumulation using a chlorine (Cl2)-containing fill may include reducing a temperature of the chamber body during at least one of introducing the chlorine (Cl2)-containing fill into the chamber body and etching the silicon-containing accumulation using the chlorine (Cl2)-containing fill, as shown in block 390. In this regard, during introducing the chlorine (Cl2)-containing fill and etching the silicon-containing accumulation using the chlorine (Cl2)-containing fill, the temperature of the chamber body (e.g., a transparent material forming the chamber body) may be reduced to between about 400 degrees Celsius and about 275 degrees Celsius, as shown in block 392. For example, the temperature of the chamber body may be reduced to between about 400 degrees Celsius and about 350 degrees Celsius, or between about 350 degrees Celsius and about 300 degrees Celsius, or even between about 300 degrees Celsius and about 275 degrees Celsius. Advantageously, lowering the temperature of the chamber body to within these ranges enables the chlorine (Cl 2 ) gas forming the chlorine (Cl 2 ) containing fill to etch (and thereby remove) silicon containing deposits without etching the transparent material, such as quartz, forming the chamber body.

[0083] Etching 312 the silicon-containing accumulation using a chlorine (Cl2)-containing fill may include reducing a temperature of one or more structures disposed within an interior of the chamber body during at least one of introducing the chlorine (Cl2)-containing fill into the chamber body and etching the silicon-containing accumulation using the chlorine (Cl2)-containing fill, as shown in block 394. In this regard, during introducing the chlorine (Cl2)-containing fill and / or etching the silicon-containing accumulation using the chlorine (Cl2)-containing fill, a temperature of one or more of a substrate support, a spacer, and / or a plurality of lift pins disposed within the chamber body (e.g., a temperature of an opaque material forming one or more of the above structures) may be reduced to between about 575 degrees Celsius and about 400 degrees Celsius, as shown in block 398. For example, the temperature of the chamber body may be reduced to between about 575 degrees Celsius and about 525 degrees Celsius, or between about 525 degrees Celsius and about 450 degrees Celsius, or even between about 450 degrees Celsius and about 400 degrees Celsius, also as shown in block 398. Advantageously, reducing the temperature of structures disposed within the chamber body—and maintaining the temperature of the structures within this range—can limit (or eliminate) the tendency of chlorine gas (Cl2) to etch structures formed of opaque materials without impairing the ability of chlorine gas (Cl2) to etch silicon-containing deposits within the chamber body, such as structures formed of bulk silicon carbide or structures having a silicon carbide coating.

[0084] Etching 312 the silicon-containing deposits using a chlorine (Cl2) containing gas fill may include reducing the temperature of the chamber body (e.g., the temperature of the interior surface of the upper wall of the chamber body) more slowly than the rate at which the temperature of structures disposed within the interior of the chamber body is reduced, as shown in block 301. For example, the temperature of a substrate support and / or a plurality of lift pins slidably received within the substrate support may be reduced more slowly than the temperature of the substrate support disposed within the chamber body to limit etching of silicon carbide forming either (or both) the substrate support and the lift pins, as shown in block 303. The temperature of the chamber body may be reduced more slowly than the temperature of a divider disposed within the chamber body to limit etching of silicon carbide forming the divider, as shown in block 303. The magnitude of the temperature change may be achieved using either (or both) of an upper lamp array supported above the chamber body and / or a lower lamp array supported below the chamber body, such as the upper heater element array 150 ( Figure 3 ) and / or lower heater element array 152 ( Figure 3 For example, the power applied to either (or both) the upper and lower lamp arrays can be decreased (e.g., to about 5% of the nominal value) to a "free fall" temperature of an internal structure disposed within the interior of the chamber body, utilizing the emissivity characteristics of an opaque material forming the structure relative to a transparent material forming the chamber body, by closing either (or both) the isolation valve and the pressure control valve to establish a predetermined temperature differential range within a time interval during which a chlorine (Cl2)-containing gas fill is accumulated within the chamber body.

[0085] In certain examples of the present disclosure, etching 312 the silicon-containing accumulation using a chlorine (Cl2)-containing fill may include maintaining a predetermined temperature differential between the chamber body and structures disposed within the interior of the chamber body, as shown in block 305. In this regard, during the introduction of the chlorine (Cl2)-containing fill and / or etching the silicon-containing accumulation using the chlorine (Cl2)-containing fill, the temperature differential between the chamber body and the structures disposed within the interior of the chamber body may be maintained between about 140 degrees Celsius and about 175 degrees Celsius, also as shown in block 305. For example, a temperature differential between about 140 degrees Celsius and about 150 degrees Celsius, or between about 150 degrees Celsius and about 160 degrees Celsius, or even between about 160 degrees Celsius and about 175 degrees Celsius, may be maintained between the chamber body and the structures disposed within the interior of the chamber body (e.g., a substrate support), also as shown in block 305. Advantageously, such a temperature differential can ensure effectiveness of chlorine gas (Cl 2 ) contained within the chlorine gas (Cl 2 )-containing fill in etching silicon-containing deposits within the chamber body while limiting (or eliminating) etching of exposed silicon carbide surfaces within the interior of the chamber body.

[0086] like Fig.14 As shown, depositing 304 the material layer onto the substrate may include positioning the substrate within the chamber body prior to flowing a silicon-containing material layer precursor through the chamber body, as shown in block 307. The substrate may then be exposed to the silicon-containing material layer precursor while the silicon-containing material layer precursor flows through the chamber body, for example, during the flow through the chamber body according to a laminar flow pattern, as shown in block 309. It is contemplated that the silicon-containing material layer is deposited onto the substrate using the silicon-containing material layer precursor and then the substrate is removed from the chamber body prior to introducing a chlorine-containing gas (Cl2) fill, as shown in block 311. It is also contemplated that an etchant quenching operation may be performed prior to deposition and / or positioning, as shown in block 315. In this regard, it is contemplated that, after cleaning and prior to positioning the substrate in the chamber body, after opening either (or both) of the isolation valve and the pressure control valve, hydrogen (H2) is flowed into the chamber body, for example, to convert residual chlorine (Cl2) remaining within the chamber body into hydrochloric acid (HCl), as shown in blocks 315 and 317. Advantageously, this prevents etching of the substrate by residual chlorine (Cl 2 ) remaining in the chamber body after cleaning, since hydrochloric acid (HCl) is inactive at typical substrate loading temperatures, whereas chlorine (Cl 2 ) may be active at such loading temperatures.

[0087] In some examples, during deposition of a material layer onto a substrate, a shaft purge can be provided to a shaft member connected to the chamber body, such as to tube member 164 ( Figure 3) as shown in block 315. According to certain examples, the axis purge gas may include hydrogen (H2), and the composition of the axis purge may be switched from hydrogen (H2) to nitrogen (N2) before the chlorine-containing (Cl2) purge is introduced into the chamber body, as shown in block 317. In view of the present disclosure, one skilled in the art will appreciate that switching the axis purge from hydrogen (H2) to nitrogen (N2) gas may limit the thermal effects of residual hydrogen (H2) trapped within the tube member, which may otherwise affect temperature control within the chamber body during the removal of silicon-containing deposits from the chamber body. In certain examples, the mass flow rate of the axis purge may be reduced (or stopped entirely) after the chlorine-containing (Cl2) purge is introduced into the chamber body.

[0088] A material layer, such as a silicon-containing material layer, formed using epitaxial techniques can be deposited onto a substrate by supporting the substrate in a chamber, heating the substrate to a desired material layer deposition temperature, and exposing the substrate to the desired material layer deposition temperature under selected environmental conditions so that the material layer is deposited onto the substrate. Once the material develops desired properties, such as a desired thickness or electrical properties, the substrate can be removed from the chamber and sent for further processing to be suitable for the semiconductor device being manufactured. In some material layer deposition operations, for example, when material layer precursors and / or reaction products condense on the interior surface of a chamber for material layer deposition operations and / or on structures located within the chamber, such as a substrate support for supporting a substrate and / or within a mechanical gap defined between mechanical parts that are movable relative to each other with the chamber, such as between lift pins slidably received within a substrate support and a substrate support on which a substrate is positioned during a material layer deposition operation, an accumulation may form within a chamber for a deposition operation.

[0089] There are various countermeasures to manage the development of deposits within a chamber. For example, in some deposition operations, the chamber may be periodically cleaned to remove the accumulated material between material layer deposition operations. Cleaning may be accomplished by heating the chamber to a relatively high temperature, such as about 1000 degrees Celsius, and providing a hydrochloric acid (HCl) and hydrogen (H2) carrier to the chamber to remove the accumulated material from the chamber. Although generally satisfactory for its intended purpose, such chamber cleaning limits the throughput of the chamber due to the time required for the hydrochloric acid (HCl) to flow through the chamber to remove the accumulated material from the chamber. In addition, because the hydrochloric acid (HCl) flows through the chamber, the residence time is limited, and a relatively large amount of hydrochloric acid (HCl) may be required relative to the amount of hydrochloric acid (HCl) acid that reacts with the material that forms the deposit, extending the time required to clean the chamber and increasing the cost of ownership due to the large amount of unreacted hydrochloric acid (HCl) released from the chamber.

[0090] In the examples described herein, chlorine (Cl2) is used to remove material deposits from internal surfaces and structures in a chamber for material layer deposition. According to some examples, cleaning is completed at a relatively low temperature, such as at a chamber temperature between about 400 degrees Celsius and about 490 degrees Celsius. It is conceivable that by closing any one (or two) of the isolation valve and the pressure control valve that connect the chamber body to the exhaust source and / or the vacuum pump, the chamber body can be separated from the exhaust source and the vacuum pump fluid for maintaining the reduced pressure (e.g., between about 3 Torr and about 10 Torr) in the chamber body during the deposition of the material layer, and the chlorine (Cl2) in the chamber is distributed by increasing the mean free path to the exhaust end of the chamber body. It is also conceivable that before introducing a chlorine-containing (Cl2) filling into the chamber body and after removing the chlorine-containing (Cl2) filling and the etchant product from the chamber, the chamber body can be purged with nitrogen, and the fore-stage pipeline of the reactor can be additionally cleaned using the chlorine-containing (Cl2) filling.

[0091] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0092] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.

[0093] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

Claims

1. A material layer deposition method, comprising: flowing a silicon-containing material layer precursor through the chamber body; forming a silicon-containing deposit within the chamber body; introducing a chlorine (Cl2) containing gas fill into the chamber body; Etching at least a portion of the silicon-containing deposit using a chlorine (Cl2)-containing fill; and The chlorine (Cl 2 ) containing fill and silicon containing etchant products are removed from the chamber body.

2. The method according to claim 1, further comprising: supporting a substrate within the chamber body prior to flowing the silicon-containing material layer precursor through the chamber body; exposing the substrate to the silicon-containing material layer precursor while the silicon-containing material layer precursor flows through the chamber body; depositing a silicon-containing material layer onto a substrate using a silicon-containing material layer precursor; as well as Prior to introducing a chlorine (Cl 2 ) containing gas fill into the chamber body, the substrate is removed from the chamber body.

3. The method according to claim 1, further comprising: mixing hydrogen (H2) with the silicon-containing material layer precursor before flowing the silicon-containing material layer precursor through the chamber body; and in, Flowing the silicon-containing material layer precursor through the chamber body includes flowing the silicon-containing material layer precursor mixed with hydrogen (H 2 ) through the chamber body.

4. The method according to claim 1, wherein: During the introduction of the chlorine (Cl 2 ) containing gas fill, the pressure within the chamber body increases from about 5 Torr to about 100 Torr.

5. The method according to claim 1, wherein: Forming the silicon-containing deposit includes forming the silicon-containing deposit on a quartz surface within the chamber body, and wherein etching at least a portion of the silicon-containing deposit includes removing the silicon-containing deposit from the quartz surface within the chamber body.

6. The method according to claim 1, wherein: Forming the silicon-containing deposits includes forming the silicon-containing deposits on exposed silicon carbide surfaces within the chamber body, and wherein etching at least a portion of the silicon-containing deposits includes removing the silicon-containing deposits from the silicon carbide surfaces within the chamber body.

7. The method according to claim 1, wherein: Introducing the chlorine (Cl2) containing gas fill into the chamber body comprises: flowing nitrogen (N2) gas through the interior of the chamber body; Purge the interior of the chamber body with nitrogen (N2); fluidly isolating the interior of the chamber body from the exhaust source; and A chlorine (Cl2) containing gas fill is introduced into the interior of the chamber body while the chamber body is separated from the exhaust source fluid.

8. The method according to claim 1, wherein: Introducing the chlorine (Cl 2 ) containing gas fill into the chamber body includes increasing the pressure within the interior of the chamber body from a first pressure at the start of introducing the chlorine (Cl 2 ) containing gas fill to a second pressure at the end of introducing the chlorine (Cl 2 ) containing gas fill.

9. The method according to claim 1, wherein: Flowing the silicon-containing material layer precursor through the chamber body includes flowing the silicon-containing material layer precursor through the interior of the chamber body using a laminar flow mode, and wherein introducing the chlorine-containing gas (Cl2) filling into the chamber body includes circulating the chlorine-containing gas (Cl2) filling within the chamber body using a turbulent flow mode.

10. The method of claim 1, further comprising rotating a substrate support disposed within the chamber body during etching at least a portion of the silicon-containing deposits with the chlorine (Cl2)-containing gas fill, wherein No substrate is positioned on the substrate support during the rotation of the substrate support.

11. The method according to claim 1, further comprising: reducing the temperature of the chamber body while introducing the chlorine (Cl 2 ) containing gas fill into the chamber body and etching at least a portion of the silicon containing deposit using the chlorine (Cl 2 ) containing gas fill; and A temperature of a substrate support disposed within the chamber body is reduced while a chlorine (Cl 2 ) containing gas fill is introduced into the chamber body and at least a portion of the silicon containing deposit is etched using the chlorine (Cl 2 ) containing gas fill.

12. The method according to claim 1, wherein: The silicon-containing deposits reside on the interior surface of the upper wall of the chamber body, wherein the temperature of the chamber body decreases more slowly than the temperature of the substrate support to limit etching of the silicon carbide coating of the substrate support by the chlorine (Cl2)-containing gas fill during etching of the silicon-containing deposits.

13. The method of claim 1 , further comprising maintaining a temperature differential between about 140 degrees Celsius and about 175 degrees Celsius between a chamber body and a substrate support disposed within the chamber body during introducing the chlorine (Cl 2 )-containing fill into the chamber body and etching at least a portion of the silicon-containing deposit using the chlorine (Cl 2 )-containing fill.

14. The method according to claim 1, wherein: During the introduction of the chlorine (Cl 2 ) containing fill into the chamber body and etching at least a portion of the silicon containing deposit with the chlorine (Cl 2 ) containing fill, the temperature of the chamber body is reduced to between about 275 degrees Celsius and about 400 degrees Celsius.

15. The method according to claim 1, wherein: During introducing the Cl2-containing fill into the chamber body and etching at least a portion of the silicon-containing deposit using the Cl2-containing fill, a temperature of a substrate support disposed within the chamber body is reduced to between about 400 degrees Celsius and about 575 degrees Celsius.

16. The method according to claim 1, wherein: Introducing the chlorine (Cl2) containing gas fill into the chamber body comprises: mixing chlorine gas (Cl2) with nitrogen gas (N2); and A mixture of chlorine (Cl2) and nitrogen (N2) gases is provided to the chamber body.

17. The method of claim 1, further comprising, wherein introducing the chlorine (Cl2)-containing fill into the chamber body comprises introducing chlorine (Cl2) into the chamber body at between about 50 standard cubic centimeters per minute and about 500 standard cubic centimeters per minute while closing either (or both) of an isolation valve and a pressure control valve connecting the chamber body to an exhaust source.

18. The method of claim 1 , further comprising reducing (or stopping) an axial purge flow provided to a tube member extending around an axial member fixed to a lower wall of the chamber body, the axial member extending through the tube member and defining a gap therebetween, the axial member being rotationally fixed relative to a substrate support disposed within the chamber body and supported to rotate within the chamber body about a rotational axis.

19. A semiconductor processing system comprising: a first precursor source including a silicon-containing material layer precursor and a chlorine gas (Cl2) source including chlorine gas (Cl2); a chamber body formed of quartz, the chamber body being connected to a first precursor source and a chlorine (Cl2) gas source; a substrate support comprising a bulk graphite material having a silicon carbide coating disposed within the chamber body; an exhaust source coupled to the chamber body through an isolation valve and a pressure control valve; and A controller operably connected to a semiconductor processing system and comprising a processor and a memory having a non-transitory machine-readable medium having recorded thereon instructions which, when read by the processor, cause the processor to: flowing a silicon-containing material layer precursor from a first precursor source through the chamber body; forming a silicon-containing deposit within the chamber body using a silicon-containing material layer precursor; By closing either (or both) of the isolation valve and the pressure control valve, a chlorine (Cl2)-containing gas fill is introduced into the chamber body from a chlorine (Cl2) gas source; Etching at least a portion of the silicon-containing deposit using a chlorine (Cl2)-containing fill; and The chlorine-containing (Cl 2 ) fill and silicon-containing etchant product are removed from the chamber body by opening either (or both) the isolation valve and the pressure control valve.

20. A computer program product comprising: A non-transitory machine-readable medium having recorded thereon instructions which, when read by a processor, cause the processor to: flowing a silicon-containing material layer precursor through the chamber body; forming a silicon-containing deposit within the chamber body; introducing a chlorine (Cl2) containing gas fill into the chamber body; Etching at least a portion of the silicon-containing deposit using a chlorine (Cl2)-containing fill; and The chlorine (Cl 2 ) containing fill and silicon containing etchant products are removed from the chamber body.

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