Liner structure

Abstract

A pad structure may include a pad and a first block. The liner may be configured to be disposed on an inner sidewall of a reaction chamber configured to house a heater and a substrate. The first block may be connected to the pad. The first block may include a different material than the material of the pad.

Description

Technical Field

[0001] Example embodiments relate to a liner structure and / or an apparatus for processing a substrate including the liner structure, and more particularly, to a liner structure disposed on an inner sidewall of a reaction chamber and / or an apparatus for processing a substrate including the liner structure. Background Art

[0002] Typically, an apparatus for processing a substrate may use a plasma process to form a layer on a substrate. The apparatus may include a reaction chamber, a heater, a liner, etc. The reaction chamber may be configured to accommodate a substrate. The heater may heat the substrate. The liner may be arranged on the inner side wall of the reaction chamber.

[0003] According to the related art, as the size of semiconductor devices can be reduced, it may be necessary to improve the uniformity of layers on a substrate. Process improvements may not be able to achieve this requirement. Summary of the invention

[0004] Example embodiments provide a pad structure capable of improving uniformity of a layer.

[0005] Example embodiments also provide an apparatus for processing a substrate including the above-mentioned pad structure.

[0006] According to example embodiments, a liner structure may include: a liner configured to be arranged on an inner sidewall of a reaction chamber configured to accommodate a heater and a substrate; and a first block connected to the liner. A material of the first block may be different from a material of the liner.

[0007] According to example embodiments, a liner structure may include: a liner configured to be arranged on an inner side wall of a reaction chamber configured to accommodate a heater and a substrate, the liner including a plurality of accommodating grooves having the same size on an inner side surface of the liner, and the liner including an insulating material; and a first block detachably accommodated in at least one of the plurality of accommodating grooves. The insulating material of the first block may be different from the insulating material of the liner.

[0008] According to example embodiments, a liner structure may include: a liner configured to be arranged on an inner side wall of a reaction chamber configured to accommodate a heater and a substrate, the liner including a plurality of accommodating grooves having the same size on an outer side surface of the liner, and the liner including an insulating material; and a first block detachably accommodated in at least one of the plurality of accommodating grooves. The first block may include a conductive material.

[0009] According to example embodiments, a liner structure may include: a first liner configured to be arranged on an inner sidewall of a reaction chamber configured to accommodate a heater and a substrate, the first liner including an insulating material; and a second liner configured to be arranged on the inner sidewall of the reaction chamber, the second liner being connected to respective ends of the first liner. The insulating material of the second liner may be different from the insulating material of the first liner.

[0010] According to example embodiments, a liner structure may include: an upper liner structure configured to be arranged on an upper portion of an inner sidewall of a reaction chamber configured to accommodate a heater and a substrate, the upper liner structure including an insulating material; and a lower liner structure configured to be arranged on a lower portion of the inner sidewall of the reaction chamber below the upper liner structure. The upper liner structure may include an upper liner and a first upper block. The first upper block may be connected to the upper liner. The material of the first upper block may be different from the material of the upper liner.

[0011] According to example embodiments, an apparatus for processing a substrate may include: a reaction chamber configured to accommodate the substrate; a heater located in the reaction chamber and configured to heat the substrate; a plasma generator configured to generate plasma from a reaction gas in the reaction chamber; and a liner structure located on an inner sidewall of the reaction chamber. The liner structure may include a liner and a first block. The first block may be connected to the liner. A material of the first block may be different from a material of the liner.

[0012] According to example embodiments, the first block including the material different from the material of the liner may be provided to the liner to control the thickness of the layer formed on the edge portion of the substrate. In particular, the first block may be selectively provided to the receiving groove of the liner to locally control the thickness of the layer on the edge portion of the substrate. Therefore, the layer on the substrate may have improved thickness uniformity by the liner structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings. Figures 1 to 12 represents non-limiting example embodiments as described herein.

[0014] Figure 1 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments;

[0015] Figure 2 It's a picture. Figure 1 An exploded perspective view of a liner structure of the device in FIG.

[0016] Figure 3 It's a picture. Figure 2 A three-dimensional diagram of the liner structure in FIG.

[0017] Figure 4 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments;

[0018] Figure 5 It's a picture. Figure 4 A three-dimensional view of the pad structure of the device in FIG.

[0019] Figure 6 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments;

[0020] Figure 7 It's a picture. Figure 6 A three-dimensional view of the pad structure of the device in FIG.

[0021] Figure 8 It's a picture. Figure 7 A three-dimensional diagram of the liner structure in FIG.

[0022] Fig. 9 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments;

[0023] Fig.10 It's a picture. Fig. 9 A three-dimensional view of the pad structure of the device in FIG.

[0024] Fig.11 is a plan view illustrating an apparatus for processing a substrate according to example embodiments; and

[0025] Fig.12 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments. DETAILED DESCRIPTION

[0026] Expressions such as "at least one of..." when preceding a list of elements modify the entire list of elements, rather than the individual elements of the list. For example, "at least one of A, B, and C" and similar language (e.g., "at least one selected from the group consisting of A, B, and C") may be interpreted as only A, only B, only C, or any combination of two or more of A, B, and C, such as ABC, AB, BC, and AC.

[0027] When the term "approximately" or "substantially" is used in conjunction with a numerical value in this specification, the associated numerical value is intended to include a manufacturing or operating tolerance (e.g., ±10%) around the stated numerical value. In addition, when the words "approximately" and "substantially" are used in conjunction with a geometric shape, it is intended that the precision of the geometric shape is not required, but the limits of the shape are within the scope of the present disclosure. In addition, regardless of whether a numerical value or shape is modified as "approximately" or "substantially", it should be understood that these values ​​and shapes should be interpreted as including a manufacturing or operating tolerance (e.g., ±10%) around the stated numerical value or shape.

[0028] Hereinafter, example embodiments will be described in detail with reference to the accompanying drawings.

[0029] Figure 1 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments.

[0030] refer to Figure 1 , an apparatus for processing a substrate according to example embodiments may include a capacitively coupled plasma (CCP) type apparatus 100. The CCP type apparatus 100 may apply RF power to opposing electrodes to generate plasma from a reaction gas using an RF electric field between the electrodes. The CCP type apparatus 100 may include semiconductor fabrication equipment configured to process a substrate S using plasma in a reaction chamber, such as a deposition apparatus, an etching apparatus, an ashing apparatus, and the like.

[0031] The CCP type apparatus 100 may include a reaction chamber 110, a showerhead 120, a heater 140, an isolator 150, a liner structure 200, etc. That is, the CCP type apparatus 100 may include the showerhead 120 as a plasma generator.

[0032] The reaction chamber 110 may have an inner space configured to accommodate a substrate such as a semiconductor substrate. The reaction chamber 110 may include a vacuum region configured to define a space in which plasma may be formed by a reaction gas. A shutter may be arranged at a side wall of the reaction chamber 110. The shutter may open and close a door through which a semiconductor substrate may move.

[0033] The showerhead 120 may be arranged at an upper region in the reaction chamber 110. The showerhead 120 may include a plurality of injection holes configured to inject a reaction gas into the reaction chamber 110. An RF power source may be connected to the showerhead 120. Thus, the showerhead 120 may function as an upper electrode. A reaction gas line 130 may be connected to the showerhead 120 to supply a reaction gas into the showerhead 120.

[0034] The heater 140 may be arranged at the lower area in the reaction chamber 110. The heater 140 may include an electric heater circuit, a lamp heater, an infrared device heater, a thermoelectric heater, but is not limited thereto. The semiconductor substrate may be placed on the upper surface of the heater 140. The RF power supply may be connected to the heater 140 so that the heater 140 may serve as a lower electrode. A matcher (e.g., a capacitive coupling matching circuit) may be arranged between the RF power supply and the heater 140.

[0035] The isolator 150 may be disposed on the inner sidewall of the reaction chamber 110. The isolator 150 may be positioned between the liner structure 200 and the showerhead 120. Thus, the isolator 150 may isolate the inner sidewall of the reaction chamber 110 from a space in which plasma may be formed.

[0036] The liner structure 200 may be disposed on the inner sidewall of the reaction chamber 110. The liner structure 200 may be positioned below the isolator 150. The liner structure 200 may thermally insulate the inner sidewall of the reaction chamber 110 from heat generated from the heater 140 to provide a uniform temperature to the reaction chamber 110. In addition, the liner structure 200 may limit and / or prevent plasma from being directly applied to the inner sidewall of the reaction chamber 110. In particular, the liner structure 20 of the example embodiment may improve the thickness uniformity of a layer deposited on a semiconductor substrate.

[0037] The pad structure 200 may include an upper pad structure 210 and a lower pad structure 250. The upper pad structure 210 may be positioned below the isolator 150. The upper pad structure 210 may be in a ring shape. The upper surface of the upper pad structure 210 may be in contact with the lower surface of the isolator 150. The upper surface of the upper pad structure 210 may be positioned below the upper surface of the heater 140.

[0038] The lower pad structure 250 may be positioned below the upper pad structure 210. The lower pad structure 250 may be in a ring shape. The diameter of the lower pad structure 250 may be the same or substantially the same as the diameter of the upper pad structure 210, but example embodiments are not limited thereto. The upper surface of the lower pad structure 250 may be in contact with the lower surface of the upper pad structure 210. The lower pad structure 250 may include an insulating material. For example, the lower pad structure 250 may include aluminum oxide, but example embodiments are not limited thereto.

[0039] Figure 2 It's a picture. Figure 1 an exploded perspective view of the pad structure of the device in FIG. 1 , and Figure 3 It's a picture. Figure 2 A three-dimensional diagram of the pad structure in FIG.

[0040] refer to Figure 2 and Figure 3, the upper liner structure 210 may include an upper liner 220 , at least one first upper block 230 , and at least one second upper block 240 .

[0041] The upper liner 220 may be in a ring shape. The upper liner 220 may make contact with the inner sidewall of the reaction chamber 110. That is, the outer peripheral surface of the upper liner 220 may make contact with the inner sidewall of the reaction chamber 110. The upper liner 220 may include an insulating material. For example, the upper liner 220 may include aluminum oxide, but example embodiments are not limited thereto.

[0042] The upper liner 220 may include at least one upper accommodating groove 222. The upper accommodating groove 222 may be formed at the inner side surface of the upper liner 220. The upper accommodating groove 222 may be formed along the circumferential line of the upper liner 220. In example embodiments, the upper accommodating groove 222 may include a plurality of grooves. In addition, the upper accommodating grooves 222 may have the same or substantially the same size, but example embodiments are not limited thereto. The upper accommodating grooves 222 may be spaced apart from each other by a consistent gap, but example embodiments are not limited thereto. In example embodiments, the upper accommodating groove 222 may be three grooves, but example embodiments are not limited thereto. For example, the upper accommodating groove 222 may be two or at least four grooves.

[0043] The first upper block 230 may be selectively provided to the upper liner 220. In particular, the first upper block 230 may be accommodated in at least one of the upper accommodation grooves 222. The first upper block 230 may have a size corresponding to that of the upper accommodation groove 222. In particular, the first upper block 230 may be separated from the upper accommodation groove 222. The first upper block 230 in the upper accommodation groove 222 may be fixed to the upper liner 220 using a fixing member. The fixing member may include a pin, but example embodiments are not limited thereto.

[0044] The first upper block 230 may include an insulating material different from the insulating material of the upper pad 220. In particular, the first upper block 230 may have an emissivity different from the emissivity of the upper pad 220. The emissivity may correspond to an absorptivity of heat from the heater 140. Therefore, the emissivity may be inversely proportional to the temperature. That is, when the emissivity increases, the temperature decreases. In contrast, when the emissivity decreases, the temperature increases. Therefore, when the first upper block 230, which may have an emissivity different from the emissivity of the upper pad 220, may be set to the upper pad 220, the temperature of the area adjacent to the first upper block 230 may increase or decrease. Such a temperature change may directly affect the thickness of the layer deposited on the semiconductor substrate.

[0045] An increase in temperature may reduce the thickness of the layer. In contrast, a decrease in temperature may increase the thickness of the layer. As a result, the thickness of the layer that may be deposited on the region of the edge portion of the semiconductor substrate adjacent to the first upper block 230 may be precisely controlled to provide a layer with a consistent thickness.

[0046] In example embodiments, the emissivity of the first upper block 230 may be higher than that of the upper liner 220, but example embodiments are not limited thereto. For example, the first upper block 230 may include aluminum nitride, quartz, etc., but example embodiments are not limited thereto.

[0047] The second upper block 240 may be selectively provided to the upper liner 220. In particular, the second upper block 240 may be accommodated in at least one of the upper accommodation grooves 222. The second upper block 240 may have a size corresponding to the size of the upper accommodation groove 222. In particular, the second upper block 240 may be separated from the upper accommodation groove 222. The second upper block 240 in the upper accommodation groove 222 may be fixed to the upper liner 220 using a fixing member. As mentioned above, since the upper accommodation grooves 222 may have the same size, the size of the second upper block 240 may be the same or substantially the same as the size of the first upper block 230. Therefore, the first upper block 230 and the second upper block 240 may be compatible with each other. Therefore, the first upper block 230 and the second upper block 240 may be selectively arranged in the upper accommodation groove 222 according to the thickness of the layer on the region of the edge portion of the semiconductor substrate.

[0048] The second upper block 240 may include an insulating material that is the same as or substantially the same as that of the upper liner 220. Therefore, the second upper block 240 may have an emissivity that is the same as or substantially the same as that of the upper liner 220. That is, when a layer on a region adjacent to the upper receiving groove 222 may have a thickness that is the same as or substantially the same as an average thickness of a layer on an edge portion of the semiconductor substrate, it may not be necessary to change the emissivity of the upper liner 220. In this case, the second upper block 240 that may have an emissivity that is the same as or substantially the same as that of the upper liner 220 may be disposed in the upper receiving groove 222.

[0049] In contrast, the layer on the region adjacent to the upper receiving groove 222 may have a thickness different from the average thickness of the layer on the edge portion of the semiconductor substrate. In addition, the thickness of the layer may also be different from the thickness of the layer on the region adjacent to the first upper block 230. In this case, the second upper block 240, which may have an emissivity different from the emissivity of the upper liner 220 and the emissivity of the first upper block 230, may be arranged in the upper receiving groove 222. Therefore, the insulating material of the second upper block 240 may be different from the insulating materials of the upper liner 220 and the first upper block 230.

[0050] Therefore, when the layer formed in the previous process may have a uniform thickness, it may not be necessary to arrange the first upper block 230, which may include an insulating material different from that of the upper liner 220, in the upper receiving groove 222. In this case, only the second upper block 240, which may include an insulating material that is the same as or substantially the same as that of the upper liner 220, may be arranged in the upper receiving groove 222.

[0051] Figure 4 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments, and Figure 5 It's a picture. Figure 4 A three-dimensional view of the pad structure of the device in FIG.

[0052] In addition to the lower pad structure, the device 100a of the example embodiment may further include Figure 1 Therefore, the same reference numerals may refer to the same elements, and any further description about the same elements may be omitted herein for the sake of brevity.

[0053] refer to Figure 4 and Figure 5 , the lower pad structure 250 may include a lower pad 260, at least one first lower block 270 and at least one second lower block 280. That is, the lower pad structure 250 may have Figure 2 and Figure 3 In example embodiments, the lower liner structure 250 may have the same or substantially the same structure as the upper liner structure 210 in the reaction chamber 110. In example embodiments, the lower liner structure 250 may not have a portion corresponding to a door of the reaction chamber 110 through which a robot arm configured to transfer a semiconductor substrate may move through the shutter. Therefore, the lower liner structure 250 may have a shape formed by partially cutting the annular upper liner structure 210.

[0054] The lower gasket 260 may have a ring shape. The lower gasket 220 may include alumina, but example embodiments are not limited thereto.

[0055] The lower liner 260 may include a plurality of lower accommodating grooves 262. The lower accommodating grooves 262 may be formed at the inner side surface of the lower liner 260. The lower accommodating grooves 262 may have the same or substantially the same size, but example embodiments are not limited thereto. The lower accommodating grooves 262 may be spaced apart from each other by a uniform gap, but example embodiments are not limited thereto.

[0056] The first lower block 270 may be selectively provided to the lower gasket 260. In particular, the first lower block 270 may be accommodated in at least one of the lower accommodation grooves 262. The first lower block 270 may have a shape corresponding to the shape of the lower accommodation groove 262. In particular, the first lower block 270 may be separated from the lower accommodation groove 262.

[0057] The first lower block 270 may include an insulating material different from that of the lower gasket 260. In particular, the first lower block 270 may have an emissivity different from that of the lower gasket 260.

[0058] In example embodiments, the emissivity of the first lower block 270 may be higher than that of the lower liner 260, but example embodiments are not limited thereto. For example, the first lower block 270 may include aluminum nitride, quartz, etc., but example embodiments are not limited thereto.

[0059] The second lower block 280 may be selectively provided to the lower liner 260. In particular, the second lower block 280 may be accommodated in at least one of the lower accommodating grooves 262. The second lower block 280 may have a size corresponding to the size of the lower accommodating groove 262. In particular, the second lower block 280 may be separated from the lower accommodating groove 262. As mentioned above, since the lower accommodating grooves 262 may have the same size, the size of the second lower block 280 may be the same or substantially the same as the size of the first lower block 270. Therefore, the first lower block 270 and the second lower block 280 may be compatible with each other. Therefore, the first lower block 270 and the second lower block 280 may be selectively arranged in the lower accommodating groove 262 according to the thickness of the layer on the region of the edge portion of the semiconductor substrate.

[0060] The second lower block 280 may include an insulating material that is the same as or substantially the same as that of the lower pad 260. Therefore, the second lower block 280 may have an emissivity that is the same as or substantially the same as that of the lower pad 260. Alternatively, the emissivity of the second lower block 280 may be different from the emissivity of the lower pad 260 and the emissivity of the first lower block 270.

[0061] Figure 6 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments, Figure 7 It's a picture. Figure 6 a perspective view of the pad structure of the device in FIG. 1 , and Figure 8 It's a picture. Figure 7 A three-dimensional diagram of the pad structure in FIG.

[0062] In addition to the pad structure, the device 100b of the example embodiment may include Figure 1 Therefore, the same reference numerals may refer to the same elements, and any further description about the same elements may be omitted herein for the sake of brevity.

[0063] refer to Figures 6 to 8 , the upper pad structure 310 may include an upper pad 320 , at least one first upper block 330 , and at least one second upper block 340 .

[0064] The upper liner 320 may be in a ring shape. The upper liner 320 may make contact with the inner sidewall of the reaction chamber 110. That is, the outer peripheral surface of the upper liner 320 may make contact with the inner sidewall of the reaction chamber 110. The upper liner 320 may include an insulating material. For example, the upper liner 320 may include aluminum oxide, but example embodiments are not limited thereto.

[0065] The upper liner 320 may include at least one upper accommodating groove 322. The upper accommodating groove 322 may be formed at the outer side surface of the upper liner 320. The upper accommodating groove 322 may be formed along the circumferential line of the upper liner 320. In example embodiments, the upper accommodating groove 322 may include a plurality of grooves. In addition, the upper accommodating groove 322 may have the same or substantially the same size, but example embodiments are not limited thereto. The upper accommodating grooves 322 may be spaced apart from each other by a consistent gap, but example embodiments are not limited thereto. In example embodiments, the upper accommodating groove 322 may be three grooves, but example embodiments are not limited thereto. For example, the upper accommodating groove 322 may be two or at least four grooves.

[0066] The first upper block 330 may be selectively provided to the upper liner 320. In particular, the first upper block 330 may be accommodated in at least one of the upper accommodation grooves 322. Therefore, the first upper block 330 may come into contact with the inner side wall of the reaction chamber 110. The first upper block 330 may have a size corresponding to that of the upper accommodation groove 322. In particular, the first upper block 330 may be separated from the upper accommodation groove 322. The first upper block 330 in the upper accommodation groove 322 may be fixed to the upper liner 320 using a fixing member. The fixing member may include a pin, but example embodiments are not limited thereto.

[0067] The first upper block 330 may include a conductive material. For example, the first upper block 330 may include a metal such as aluminum, but example embodiments are not limited thereto. The first upper block 330 including a conductive material may change the impedance between the showerhead 120 and the heater 140. The impedance change may induce a change in the electric field. The change in the electric field may affect the density of the plasma. Therefore, the first upper block 330 including a conductive material may have an influence on the thickness of the layer deposited on the edge portion of the semiconductor substrate.

[0068] The second upper block 340 may be selectively provided to the upper liner 320. In particular, the second upper block 340 may be accommodated in at least one of the upper accommodation grooves 322. The second upper block 340 may have a size corresponding to the size of the upper accommodation groove 322. In particular, the second upper block 340 may be separated from the upper accommodation groove 322. The second upper block 340 in the upper accommodation groove 322 may be fixed to the upper liner 320 using a fixing member. As mentioned above, since the upper accommodation grooves 322 may have the same size, the size of the second upper block 340 may be the same or substantially the same as the size of the first upper block 330. Therefore, the first upper block 330 and the second upper block 340 may be compatible with each other. Therefore, the first upper block 330 and the second upper block 340 may be selectively arranged in the upper accommodation groove 322.

[0069] The second upper block 340 may include an insulating material that is the same as or substantially the same as that of the upper gasket 320. Therefore, the second upper block 340 including the insulating material may have no influence on the impedance between the shower head 120 and the heater 140.

[0070] Alternatively, the second upper block 340 may include a conductive material having a conductivity different from that of the conductive material of the first upper block 330 .

[0071] Fig. 9 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments, and Fig.10 It's a picture. Fig. 9 A three-dimensional view of the pad structure of the device in FIG.

[0072] In addition to the lower pad structure, the device 100c of the example embodiment may include Figure 6 Therefore, the same reference numerals may refer to the same elements, and any further description of the same elements may be omitted herein for the sake of brevity.

[0073] refer to Fig. 9 and Fig.10 , the lower pad structure 350 may include a lower pad 360, at least one first lower block 370 and at least one second lower block 380. That is, the lower pad structure 350 may have Figure 7 and Figure 8 In example embodiments, the lower liner structure 350 may have the same or substantially the same structure as the upper liner structure 310 in the reaction chamber 110. In example embodiments, the lower liner structure 350 may not have a portion corresponding to a door of the reaction chamber 110 through which a robot arm configured to transfer a semiconductor substrate may move through the shutter. Therefore, the lower liner structure 350 may have a shape formed by partially cutting the annular upper liner structure 310.

[0074] The lower liner 360 may have a ring shape. The lower liner 360 may make contact with the inner sidewall of the reaction chamber 110. The lower liner 360 may include an insulating material. For example, the lower liner 360 may include aluminum oxide, but example embodiments are not limited thereto.

[0075] The lower gasket 360 may include a plurality of lower receiving grooves 362. The lower receiving grooves 362 may be formed at the outer side surface of the lower gasket 360. The lower receiving grooves 362 may have the same or substantially the same size, but example embodiments are not limited thereto. The lower receiving grooves 362 may be spaced apart from each other by a uniform gap, but example embodiments are not limited thereto.

[0076] The first lower block 370 may be selectively provided to the lower gasket 360. In particular, the first lower block 370 may be accommodated in at least one of the lower accommodation grooves 362. The first lower block 370 may have a size corresponding to that of the lower accommodation groove 362. In particular, the first lower block 370 may be separated from the lower accommodation groove 362.

[0077] The first lower block 370 may include a conductive material. For example, the first lower block 370 may include a metal such as aluminum, but example embodiments are not limited thereto.

[0078] The second lower block 380 may be selectively provided to the lower liner 360. In particular, the second lower block 380 may be accommodated in at least one of the lower accommodation grooves 362. The second lower block 380 may have a size corresponding to the size of the lower accommodation groove 362. In particular, the second lower block 380 may be separated from the lower accommodation groove 362. As mentioned above, since the lower accommodation grooves 362 may have the same size, the size of the second lower block 380 may be the same or substantially the same as the size of the first lower block 370. Therefore, the first lower block 370 and the second lower block 380 may be compatible with each other. Therefore, the first lower block 370 and the second lower block 380 may be selectively arranged in the lower accommodation groove 362.

[0079] The second lower block 380 may include an insulating material that is the same as or substantially the same as that of the lower gasket 360. Therefore, the second lower block 380 including the insulating material may have no influence on the impedance between the shower head 120 and the heater 140.

[0080] Alternatively, the second lower block 380 may include a conductive material having a conductivity different from that of the conductive material of the first lower block 370 .

[0081] Fig.11 is a plan view illustrating an apparatus for processing a substrate according to example embodiments.

[0082] refer to Fig.11, the pad structure 400 of the example embodiment may include a first pad 410 and a second pad 420. The first pad 410 and the second pad 420 may form a ring shape. That is, the second pad 420 may extend from both ends of the first pad 410.

[0083] The second pad 420 may include an insulating material different from that of the first pad 410. In particular, the second pad 420 may have an emissivity higher than that of the first pad 410. In example embodiments, the first pad 410 may include aluminum oxide, and the second pad 420 may include aluminum nitride, quartz, etc., but example embodiments are not limited thereto.

[0084] The first pad 410 may be positioned adjacent to the shutter. Since the shutter may open and close the door of the reaction chamber 110, the temperature of the edge portion of the semiconductor substrate adjacent to the shutter may be lower than the temperature of other portions of the semiconductor substrate. Therefore, when the second pad 420 may be positioned away from the shutter, the temperature adjacent to the second pad 420 may be lowered to the temperature adjacent to the shutter. The first pad 410 may control the temperature of the edge portion of the semiconductor substrate adjacent to the shutter. Therefore, the arc length of the first pad 410 may be shorter than the arc length of the second pad 420.

[0085] Fig.12 is a cross-sectional view illustrating an apparatus for processing a substrate according to example embodiments.

[0086] refer to Fig.12 , an inductively coupled plasma (ICP) type device 100d may generate plasma from a reaction gas using a magnetic field induced by a coil antenna 224. RF power applied to the coil antenna 224 may be transmitted to the reaction gas through a dielectric window 220. The ICP type device 100d may include semiconductor manufacturing equipment configured to process a substrate using plasma in a reaction chamber, such as a deposition device, an etching device, an ashing device, and the like.

[0087] The ICP type device 100d may include a reaction chamber 110, an antenna 160, a dielectric window 170, a heater 140, a pad structure 200, etc. That is, the ICP type device 100d may include the antenna 160 and the dielectric window 170 as a plasma generator.

[0088] The reaction chamber 110 may have an inner space configured to accommodate a semiconductor substrate. The reaction chamber 110 may have a vacuum region for defining a space where plasma may be formed from a reaction gas.

[0089] The antenna 160 may be disposed on an upper surface of the reaction chamber 110. An RF power source may be connected to the antenna 160. A magnetic field induced by the antenna 160 may be applied to a reaction gas injected into the reaction chamber 110 to generate plasma.

[0090] The dielectric window 170 may be disposed below the antenna 160. The dielectric window 170 may include a dielectric material. The dielectric window 170 may transmit RF power in the antenna 160 into the reaction chamber 110. In addition, the dielectric window 170 may inject a reaction gas into the reaction chamber 110.

[0091] The heater 140 may be arranged at a lower region in the reaction chamber 110. The semiconductor substrate may be placed on an upper surface of the heater 140. An RF power source may be connected to the heater 140 so that the heater 140 may function as a lower electrode. A matcher may be arranged between the RF power source and the heater 140.

[0092] The liner structure 200 may be disposed on the inner sidewall of the reaction chamber 110. The liner structure 200 may thermally insulate the inner sidewall of the reaction chamber 110 from heat generated from the heater 140 to provide a uniform temperature to the reaction chamber 110. In addition, the liner structure 200 may limit and / or prevent plasma from being directly applied to the inner sidewall of the reaction chamber 110. In particular, the liner structure 20 of example embodiments may improve the thickness uniformity of a layer deposited on a semiconductor substrate.

[0093] In an example embodiment, the pad structure 200 may have Figure 2 and Figure 3 The structure of the liner structure 200 is the same or substantially the same as that of the liner structure 200 in FIG. Therefore, for the sake of brevity, any further description about the liner structure 200 may be omitted herein.

[0094] Alternatively, the pad structure 200 may have Figure 4 The structure in Figure 6 The structure in Fig. 9 The structure in Fig.11 The structure in .

[0095] According to example embodiments, a first block including a material different from that of the liner may be provided to the liner to control the thickness of a layer formed on an edge portion of the substrate. In particular, the first block may be selectively provided to a receiving groove of the liner to locally control the thickness of the layer on the edge portion of the substrate. Therefore, the layer on the substrate may have improved thickness uniformity by the liner structure.

[0096] The foregoing describes example embodiments and should not be construed as limiting thereof. Although several example embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the example embodiments without departing from the novel teachings and advantages of the embodiments of the inventive concept. Therefore, all such modifications are intended to be included within the scope of the inventive concept as defined in the claims. Therefore, it should be understood that the foregoing describes various example embodiments and should not be construed as being limited to the specific example embodiments disclosed, and modifications to the disclosed example embodiments as well as other example embodiments are intended to be included within the scope of the appended claims.

Claims

1. A liner structure, comprising: a liner configured to be arranged on an inner sidewall of a reaction chamber configured to accommodate a heater and a substrate; as well as A first block is connected to the gasket, the first block being made of a material different from that of the gasket.

2. The cushion structure according to claim 1, wherein: The first block is located on the inner side surface of the pad.

3. The cushion structure according to claim 2, wherein: said material of said first block is an insulating material of said first block, The material of the liner is an insulating material of the liner, and The insulating material of the first block is different from the insulating material of the gasket.

4. The cushion structure according to claim 3, wherein: The emissivity of the first block is different from the emissivity of the pad.

5. The cushion structure according to claim 4, wherein: The emissivity of the first block is higher than the emissivity of the pad.

6. The cushion structure according to claim 5, wherein: The insulating material of the liner comprises aluminum oxide, and The insulating material of the first block includes aluminum nitride or quartz.

7. The cushion structure according to claim 2, wherein: The gasket includes a receiving groove on the inner side surface of the gasket, and The receiving groove is configured to receive the first block.

8. The cushion structure according to claim 7, wherein: The receiving groove includes a plurality of receiving grooves having the same size, and The first block is located in at least one accommodating groove among the plurality of accommodating grooves.

9. The cushion structure according to claim 8, wherein: The first block is detachably received in the at least one receiving groove among the plurality of receiving grooves.

10. The pad structure according to claim 8, further comprising: a second block, the second block being located in one or more of the plurality of receiving grooves, wherein The first block and the second block are respectively located in different accommodating grooves among the plurality of accommodating grooves.

11. The cushion structure according to claim 10, wherein: The material of the second block is the same material as the material of the pad.

12. The cushion structure according to claim 10, wherein: The material of the second block is different from the material of the liner and the material of the first block.

13. The cushion structure according to claim 10, wherein: The second block is detachably received in the one or more receiving grooves among the plurality of receiving grooves.

14. A liner structure, comprising: a liner configured to be arranged on an inner side wall of a reaction chamber configured to accommodate a heater and a substrate, the liner comprising a plurality of accommodating grooves having the same size on an inner side surface of the liner, and the liner comprising an insulating material; as well as A first block is detachably received in at least one receiving groove among the plurality of receiving grooves, and an insulating material of the first block is different from the insulating material of the gasket.

15. The cushion structure according to claim 14, wherein: The emissivity of the first block is higher than the emissivity of the pad.

16. The pad structure according to claim 14, further comprising: a second block, the second block being detachably received in one or more of the plurality of receiving grooves, wherein The first block and the second block are respectively located in different accommodating grooves among the plurality of accommodating grooves.

17. A liner structure, comprising: a liner configured to be arranged on an inner side wall of a reaction chamber configured to accommodate a heater and a substrate, the liner comprising a plurality of accommodating grooves having the same size on an outer side surface of the liner, and the liner comprising an insulating material; as well as A first block is detachably received in at least one receiving groove among the plurality of receiving grooves, the first block comprising a conductive material.

18. The cushion structure according to claim 17, wherein: The insulating material of the liner comprises aluminum oxide, and The conductive material of the first block includes metal.

19. The pad structure according to claim 17, further comprising: a second block, the second block being detachably received in at least one receiving groove of the plurality of receiving grooves, wherein The first block and the second block are respectively located in different accommodating grooves among the plurality of accommodating grooves.

20. The cushion structure according to claim 19, wherein: The second block includes an insulating material, and the insulating material of the second block includes the same insulating material as the insulating material of the pad.

Images