Wafer drying device and wafer drying method

Abstract

The invention discloses a wafer drying device and a wafer drying method. The wafer drying device comprises a cavity; the supercritical dry fluid inlet is formed in the top wall of the cavity, the bearing piece and the first flow uniformizing assembly are arranged in the cavity, and the supercritical dry fluid inlet is used for providing supercritical dry fluid into the cavity; the bearing part is used for bearing a plurality of wafers which are vertically arranged, and the plurality of wafers are arranged in the bearing part at intervals in the horizontal direction; the first flow uniformizing assembly is arranged between the supercritical drying fluid inlet and the wafer and comprises a first barrier plate arranged opposite to the supercritical drying fluid inlet and a first flow uniformizing plate located between the edge of the first barrier plate and the side wall of the cavity; when the supercritical drying fluid enters the cavity, the supercritical drying fluid is diffused to the first flow equalizing plate through the first barrier plate and then flows to the surface of the wafer from the side edge of the wafer so as to dry the wafer. According to the invention, a plurality of wafers can be uniformly dried in the same cavity at the same time, and the drying efficiency and the production capacity are greatly improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer drying device and a wafer drying method. Background Art

[0002] The integrated circuit chip manufacturing process is the process of transferring the pre-designed circuit diagram to the silicon wafer through various process methods, and then performing packaging and testing to form a complete circuit chip. In this process, wet electronic chemicals, deionized water and other liquids are required to wet-etch and clean the semiconductor wafer, and finally remove the liquid on the surface of the wafer for drying. In the wafer drying process, the method of high-speed rotation of a single wafer and use of a drying liquid, such as isopropyl alcohol (IPA, Iso-Propyl Alcohol) to replace the liquid on the surface of the wafer is generally used for drying.

[0003] However, with the development of semiconductor process technology, the CD (Critic Dimension) of chip devices on the surface of the wafer is constantly shrinking, the circuit pattern is evolving towards miniaturization and high aspect ratio, and the device structure is also developing from a two-dimensional planar structure to a three-dimensional structure and a multi-layered structure. When the above-mentioned three-dimensional structure with a fine and high aspect ratio is dried, the existing drying technology will form an uneven half-moon-shaped gas-liquid interface inside the pattern structure due to the surface tension of the liquid during the process of separating the liquid from the wafer, and then exert an unbalanced pulling force or pushing force on the pattern structure, resulting in defects such as bending, deformation, adhesion, damage, and collapse of the pattern structure, causing device failure.

[0004] Therefore, it is necessary to provide a wafer drying device and method to solve the above problems. Summary of the invention

[0005] Purpose of the invention: The present application relates to a wafer drying device and a wafer drying method, which can, to a certain extent, avoid the occurrence of defects such as bending, deformation, adhesion, damage, collapse, etc. on the surface structure of the object to be dried during the drying process, thereby causing device failure, and can achieve uniform drying of multiple wafers in the same processing chamber at the same time.

[0006] On the one hand, the present application provides a wafer drying device, comprising: a cavity; a supercritical drying fluid inlet, arranged on the top wall of the cavity, for providing a supercritical drying fluid into the cavity; a carrier, for carrying a plurality of vertically placed wafers, wherein the plurality of wafers are arranged at intervals in the horizontal direction in the carrier; a first flow-uniform component, arranged between the supercritical drying fluid inlet and the wafer, comprising a first baffle plate arranged opposite to the supercritical drying fluid inlet, and a first flow-uniform plate located between the first baffle plate and the side wall of the cavity, wherein a first flow-uniform hole is formed on the first flow-uniform plate; wherein, when the supercritical drying fluid enters the cavity, the supercritical drying fluid diffuses to the first flow-uniform plate through the first baffle plate, and then flows from the side of the wafer to the wafer plate surface through the first flow-uniform hole to dry the wafer.

[0007] Specifically, the first flow homogenizing plate and the first blocking plate are arranged on the same plane.

[0008] Specifically, the first flow uniforming plate connects the first blocking plate and the side wall of the cavity.

[0009] Specifically, the height of the first flow homogenizing plate is lower than that of the first blocking plate.

[0010] Specifically, the first flow homogenizing plate is extended and arranged below the first blocking plate.

[0011] Specifically, the first baffle plate is provided with a baffle plate flow-uniform hole whose size is smaller than the size of the supercritical drying fluid inlet.

[0012] Specifically, the wafer is placed on the carrier at a position opposite to the first flow-uniform hole.

[0013] Specifically, the first flow equalizing assembly further includes a second flow equalizing plate whose height is lower than that of the first flow equalizing plate, and the second flow equalizing plate is provided with second flow equalizing holes, and the second flow equalizing holes are staggered with the first flow equalizing holes.

[0014] Specifically, the second flow equalizer plate is connected to the side wall of the cavity.

[0015] Specifically, the first uniform flow component further includes a diverter plate arranged between the first baffle plate and the supercritical dry fluid inlet, the diverter plate is provided with a diverter hole and an air flow groove connected to the diverter hole, and the air flow groove is arranged on a surface opposite to the first baffle plate.

[0016] Specifically, the edge of the diverter plate extends toward the side wall of the cavity; the airflow groove includes a main groove and a diverter groove, the diverter flow hole is arranged in the main groove, the diverter groove is connected to the main groove, and extends from the main groove to the edge of the diverter plate.

[0017] Specifically, the edge of the diverter plate is connected to the side wall of the cavity.

[0018] Specifically, the distance between two adjacent wafers is 5-20 mm.

[0019] Specifically, the wafer drying device further includes a supercritical drying fluid outlet arranged on the bottom wall of the chamber, and the device further includes: a second flow uniforming component arranged between the carrier and the supercritical drying fluid outlet.

[0020] Specifically, the second flow uniformizing component includes: a second baffle plate arranged opposite to the supercritical dry fluid outlet, and a third flow uniformizing plate arranged between the edge of the second baffle plate and the side wall of the cavity. When the supercritical dry fluid is discharged from the cavity, the supercritical dry fluid corresponding to the supercritical dry fluid outlet is blocked by the second baffle plate, diffuses to the third flow uniformizing plate, and then flows out from the supercritical dry fluid outlet.

[0021] Specifically, the wafer drying device further includes: a pressure relief port, which is arranged on the top wall of the cavity or the upper part of the side wall of the cavity, connected to the cavity, and is used to discharge the supercritical drying fluid that has become a gas phase fluid.

[0022] Specifically, the cavity is a cylindrical cavity adapted to the shape of the wafer.

[0023] Specifically, the carrier is provided with a plurality of carrying grooves for carrying a plurality of wafers, and the bottom of the carrying grooves is provided with fluid through holes.

[0024] On the other hand, the present application provides a wafer drying method, including: vertically inserting multiple wafers into a carrier in a cavity of a wafer drying device, wherein the multiple wafers are arranged at intervals in a horizontal direction in the carrier; introducing a supercritical drying fluid into the cavity through a supercritical drying fluid inlet of the wafer drying device, so that the supercritical drying fluid diffuses from a first blocking plate to a first uniform flow plate and then flows from the side of the wafer to the wafer surface; and discharging the supercritical drying fluid.

[0025] Specifically, the temperature of the supercritical drying fluid introduced into the supercritical drying fluid inlet is 15-150° C., and the introduction pressure is 0.1-25 MPa.

[0026] Specifically, before the step of introducing the supercritical drying fluid into the cavity through the supercritical drying fluid inlet, a previous process liquid is introduced into the cavity through the previous process liquid inlet of the wafer drying device, and the surface tension of the previous process liquid is greater than the surface tension of the supercritical drying fluid.

[0027] Specifically, before the step of vertically inserting multiple wafers into a carrier in the cavity of a wafer drying device, a pre-process liquid is introduced into the cavity through a pre-process liquid inlet of the wafer drying device until the pre-process liquid reaches a set height, and the set height is determined according to the size of the wafers, and the surface tension of the pre-process liquid is greater than the surface tension of the supercritical drying fluid.

[0028] Specifically, a supercritical drying fluid is introduced into the cavity through the supercritical drying fluid inlet until the supercritical drying fluid in the cavity reaches a supercritical state; the previous process liquid in the cavity is discharged through the previous process liquid outlet of the wafer drying device, and the supercritical drying fluid continues to be introduced into the cavity, and the supercritical drying fluid maintains the supercritical state in the cavity until the wafer drying is completed.

[0029] Specifically, the discharge flow rate of the previous process liquid is 5 to 100 Lpm, and the direction is vertically downward.

[0030] Specifically, the supercritical drying fluid is discharged from the supercritical drying fluid outlet of the wafer drying device, and the temperature in the cavity is adjusted by a heating element of the wafer drying device to maintain the supercritical state of the supercritical drying fluid.

[0031] Specifically, the pressure relief port provided on the top wall of the cavity is opened to reduce the pressure of the cavity, so that the supercritical dry fluid is converted into gas-phase supercritical dry fluid, and the gas-phase supercritical dry fluid is discharged through the pressure relief port.

[0032] Specifically, the supercritical drying fluid is discharged from the supercritical drying fluid outlet of the wafer drying device, and a cleaning fluid is introduced into the cavity from the cleaning fluid inlet of the wafer drying device to maintain the pressure of the cavity, so that the supercritical drying fluid remains in a supercritical state until the supercritical drying fluid is completely discharged.

[0033] Compared with the prior art, this application has the following beneficial effects:

[0034] The present application can hold multiple wafers through the support plate provided, and the supercritical drying fluid from the supercritical drying fluid inlet can evenly distribute the supercritical drying fluid in the support through the first uniform flow component, so that the multiple wafers can be evenly dried. Since the surface tension of the supercritical drying fluid is close to zero, the supercritical drying fluid can effectively prevent the surface structure of the object to be dried from bending, deformation, adhesion, damage, collapse and other defects during the drying process, thereby causing device failure. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0036] Figure 2 A schematic diagram of the structure of a first flow-uniformizing component of an embodiment of the present application is shown;

[0037] Figure 3 A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0038] Figure 4 A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0039] Figure 5 The schematic diagram of the structure of a diverter plate of one embodiment of the present application is shown;

[0040] Figure 6 A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0041] Figure 7 A schematic diagram of the structure of a carrier entering a cavity according to an embodiment of the present application is shown;

[0042] Figure 8 A schematic diagram of the structure of an interlocking mechanism opening a cavity according to an embodiment of the present application is shown;

[0043] Fig. 9 A schematic diagram of the structure of an interlocking mechanism opening a cavity according to an embodiment of the present application is shown;

[0044] Fig.10 A schematic diagram of the structure of an interlocking mechanism closing a cavity in one embodiment of the present application is shown;

[0045] Fig.11 The schematic diagram of the structure of a bearing member of an embodiment of the present application is shown;

[0046] Fig.12 A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0047] Fig.13 A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0048] Fig.14 A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0049] Fig.15 A schematic diagram of the structure of a wafer drying device according to an embodiment of the present application is shown;

[0050] Fig.16A schematic diagram of the steps of a wafer drying method according to an embodiment of the present application is shown;

[0051] Fig.17 A schematic diagram of a wafer drying process according to an embodiment of the present application is shown schematically;

[0052] Fig.18 A schematic diagram of the steps of a wafer drying method according to an embodiment of the present application is shown;

[0053] Fig.19 The figure schematically shows a wafer drying process according to an embodiment of the present application.

[0054] Among them, Q. cavity, W. wafer;

[0055] 1. Cavity cover, 11. Second accommodating space, 2. Cavity body, 21. First accommodating space, 3. Interlocking mechanism, 31. Locking bolt, 32. Locking pin, 33. Driving device, 4. Sealing ring, 5. Heating element, 6. Bearing element, 61. Bearing groove, 62. Fluid through hole, 63. Adjusting element, 7. First uniform flow assembly, 71. First blocking plate, 72. First uniform flow plate, 721. First uniform flow hole, 73. Second uniform flow plate, 74. Divider plate , 741. Diversion hole, 742. Diversion groove, 8. Second uniform flow component, 81. Second blocking plate, 82. Third uniform flow plate, 9. Supercritical drying fluid inlet, 10. Previous process liquid, 11. Previous process liquid inlet, 12. Supercritical drying fluid, 13. Liquid to be dried, 14. Sweeping fluid inlet, 15. Sweeping fluid, 16. Supercritical drying fluid outlet, 17. Previous process liquid outlet, 18. Pressure relief port, 19. Second sliding member. DETAILED DESCRIPTION

[0056] The following describes the implementation of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application.

[0057] Embodiment 1

[0058] Please refer to Figures 1 to 12 , this embodiment provides a wafer drying device for drying a wafer W.

[0059] Please refer to Figure 1The wafer drying device provided in the present application includes a cavity Q, and a supercritical dry fluid inlet 9 connected to the cavity Q is provided on the top wall of the cavity Q, which is used to enter the supercritical dry fluid 12 so that the cavity Q reaches a supercritical state. A carrier 6 is provided in the cavity Q, which is used to carry a plurality of vertically placed wafers W, and the plurality of wafers W are arranged at intervals in the horizontal direction on the carrier 6. A first flow-uniforming component 7 is also provided in the cavity Q, which is arranged between the supercritical dry fluid inlet 9 and the carrier 6, including a first baffle plate 71 arranged opposite to the supercritical dry fluid inlet 9, and a first flow-uniforming plate 72 located between the edge of the first baffle plate 71 and the side wall of the cavity Q. When the supercritical dry fluid 12 enters the cavity Q, the flow direction of the supercritical dry fluid 12 is as follows: Figure 1 The middle arrow indicates that at this time, other inlets or outlets on the top wall of the cavity Q are closed, and the supercritical dry fluid 12 entering from the supercritical dry fluid inlet 9 is blocked by the first blocking plate 71 and diffused to the first uniform flow plate 72. A plurality of first uniform flow holes 721 are evenly provided on the first uniform flow plate 72. The supercritical dry fluid 12 flows out of the first uniform flow holes 721 and flows from the side of the wafer to the wafer plate surface to dry the wafer W, which can prevent the supercritical dry fluid 12 from flowing directly to the wafer W and causing uneven drying. In this embodiment, the temperature of the supercritical dry fluid 12 introduced into the supercritical dry fluid inlet 9 can be set to 15-150°C, and the introduction pressure can be set to 0.1-25Mpa. The inventors have found that under such temperature and pressure conditions, the supercritical dry fluid 12 has a higher dissolution and replacement ability and a higher drying efficiency.

[0060] Before using the supercritical drying fluid 12 to dry the wafer W, the wafer W is covered with a pre-process liquid 10. The pre-process of drying the wafer W with the supercritical drying fluid 12 may be a liquid drying process or a cleaning process, etc., and the pre-process liquid 10 may be a treatment liquid used in the liquid drying process or the cleaning process, etc. Compared with the horizontal placement of the wafer W so that the wafer plate faces the first uniform flow component 7, the supercritical drying fluid 12 accumulates to a certain height to dry the wafer W. The vertical placement of the wafer W allows the pre-process liquid 10 on the wafer W to flow along the flow direction of the supercritical drying fluid 12 from the first uniform flow component 7, and the wafer W can be dried during the flow of the supercritical drying fluid 12, which can improve the drying efficiency of the wafer W. Compared with the arrangement of multiple wafers W in the vertical direction so that a part of the wafers W is located below another part of the wafers W, the multiple wafers W are arranged in the horizontal direction in the carrier at intervals, and the replaced pre-process liquid 10 can also leave the wafer W under the action of gravity, avoiding the contamination caused by the pre-process liquid 10 flowing to the wafer W located below. Moreover, when there are multiple wafers W, the supercritical drying fluid 12 can contact the sides of multiple wafers at the same time when the area of ​​the first flow plate 72 is very small, so that multiple wafers W can be dried synchronously while saving the volume of the cavity Q.

[0061] The surface tension of the supercritical drying fluid 12 is less than that of the previous process liquid 10 and is miscible with the previous process liquid 10, and can replace the previous process liquid 10. In this embodiment, the supercritical drying fluid 12 can be supercritical carbon dioxide, or hydrofluoroether, such as 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether, or supercritical water, ammonia, nitrous oxide, ethanol, methanol, cyclohexane, n-pentane, ethane, propane, ethylene, etc. The state of the supercritical drying fluid 12 is between gas and liquid, and has the physical properties of high density, low viscosity and high expansion capacity, and the surface tension of the supercritical drying fluid 12 is close to zero, which can avoid the unbalanced tension and pressure formed by the surface tension inside the graphic structure, and avoid the defects of the graphic structure such as bending, deformation, adhesion, damage, collapse, etc. causing device failure.

[0062] The number of first baffles 71 may be the same as the number of supercritical dry fluid inlets 9. For example, when the number of supercritical dry fluid inlets 9 is one, the number of first baffles 71 is also one. The size of the first baffle 71 may be slightly larger than the size of the supercritical dry fluid inlet 9. For example, it may be the same as the flow path cross-sectional area of ​​the supercritical dry fluid 12 at the first baffle 71, so that the supercritical dry fluid 12 can be well blocked after diffusion. In other embodiments of the present application, one first baffle 71 may be provided corresponding to a plurality of supercritical dry fluid inlets 9. When there are other inlets on the top wall of the cavity Q, the first baffle 71 may also block the other inlets to uniformly flow the fluids entering the other inlets. In other embodiments of the present application, the size of the first baffle 71 may be equal to the size of the supercritical dry fluid inlet 9.

[0063] The first flow equalizer 72 can be arranged on the extension surface of the first baffle 71, that is, the first flow equalizer 72 and the first baffle 71 are arranged in the same plane, and the edge of the first flow equalizer 72 is connected to the side wall of the cavity Q, so that the fluid blocked by the first baffle 71 can flow to the wafer W through the first flow equalizer 72. In this embodiment, the first flow equalizer 72 and the first group of baffles 71 can be integrally formed. At this time, the wafer W is vertically arranged below the first flow equalizer assembly 7, preferably below the first flow equalizer 72, especially opposite to the first flow equalizer hole 721, and avoiding the position corresponding to the first baffle 71 on the carrier 6, so as to achieve a better drying effect.

[0064] In other embodiments of the present application, when there are multiple first baffles 71, the first flow equalizer 72 may also be disposed between adjacent first baffles 71 to connect the edges of adjacent first baffles 71. In other implementations of the embodiments of the present application, a gap may also be left between the first flow equalizer 72 and the first baffle 71 and / or the side wall of the cavity Q.

[0065] A plate hole adjustment member (not shown) may be provided at the first flow-uniform hole 721 of the first flow-uniform plate 72, and the plate hole adjustment member may be an adjustment plate provided at the first flow-uniform hole 721, and may adjust the opening degree of the first flow-uniform hole 721. In other embodiments of the embodiments of the present application, the plate hole adjustment member may be a guide plate provided on the inner wall of the first flow-uniform hole 721, and the guide plate may be movable in direction to adjust the direction of the fluid flowing out of the first flow-uniform hole 721. In other embodiments of the embodiments of the present application, the first flow-uniform hole 721 may be externally connected to a nozzle, and the nozzle may be adjustable in opening and direction. In other embodiments of the embodiments of the present application, a plate hole adjustment member may not be provided.

[0066] Reference Figure 3 In a specific implementation of the embodiment of the present application, the first flow-uniform component 7 may also include a second flow-uniform plate 73, which is arranged between the first flow-uniform plate 72 and the wafer W. The height of the second flow-uniform plate 73 is lower than that of the first flow-uniform plate 72. The edge of the second flow-uniform plate 73 extends toward the side wall of the cavity Q and connects the opposite side wall of the cavity Q. The second flow-uniform holes are evenly arranged on the second flow-uniform plate 73. The second flow-uniform holes can avoid the first flow-uniform holes 721 and are staggered with the first flow-uniform holes 721, so that the surface of the second flow-uniform plate 73 between the second flow-uniform holes blocks the fluid from the first flow-uniform holes 721 and uniformizes the fluid from the first flow-uniform holes 721 again. Part of the fluid blocked by the surface of the second flow-uniform plate 73 will flow between the first blocking plate 71 and the second flow-uniform plate 73 and then flow out from the second flow-uniform holes on the second flow-uniform plate 73 at a position opposite to the surface of the first blocking plate 71. In this case, a wafer may also be arranged at a position on the carrier 6 corresponding to the blocking plate 71, so that the wafer W arranged corresponding to the first blocking plate 71 can also be dried uniformly. The size of the second uniform flow hole on the second uniform flow plate 73 may be smaller than the size of the first uniform flow hole 721, and the hole spacing of the second uniform flow hole is smaller than the hole spacing of the first uniform flow hole 721, so that the number of the second uniform flow holes is greater than the number of the first uniform flow holes 721, so that the supercritical drying fluid 12 flows to the wafer more uniformly.

[0067] Reference Figure 4 In a specific implementation of the embodiment of the present application, the first uniform flow component 7 may further include a diverter plate 74, which may be a flat plate disposed between the supercritical dry fluid inlet 9 and the first baffle plate 71. The edge of the diverter plate 74 extends toward the side wall of the cavity and may be connected to the side wall of the cavity to distribute the fluid from the supercritical dry fluid inlet 9. Figure 5As shown, the diverter plate 74 is provided with a diverter hole 741 corresponding to the supercritical dry fluid inlet 9, and the diverter plate 74 is provided with an air flow groove connected to the diverter hole 741 on the surface facing the first baffle plate 71, and the air flow groove includes a main groove 742 and a plurality of diverter grooves 743, and the plurality of diverter grooves 743 are all connected to the main groove 742. The diverter hole 741 is arranged in the main groove 742, and the diverter groove 743 extends from the main groove 742 to the side wall of the cavity Q. The main groove 742 and the diverter groove 743 guide the supercritical dry fluid 12 from the diverter hole 741 to the top of the first uniform flow plate 72, which is conducive to the uniform flow of the supercritical dry fluid 12. The size of the diverter hole 741 is smaller than the size of the supercritical dry fluid inlet 9 to slow down the flow rate of the supercritical dry fluid 12, thereby increasing the diversion time of the supercritical dry fluid 12 at the main groove 742 and the diverter groove 743, which is further conducive to uniform flow. The diverter slots 743 can be arranged symmetrically with the diverter holes 741 as the center, so that the fluid is evenly distributed in all directions. The diverter slots 743 can be extended along the arrangement direction of the first uniform flow holes 721, and can include a plurality of straight slots, so that the notches of the diverter slots 743 face the first uniform flow holes 721, and the fluid can be better divided to the first uniform flow holes 721. In other embodiments of the embodiments of the present application, the diverter slots 743 can be a combination of straight slots and arc slots, so that one diverter slot 743 corresponds to the first uniform flow holes 721 in different rows or columns, so as to achieve a better diversion effect. In other embodiments of the embodiments of the present application, the diverter plate 74 can be a convex plate with a high middle and low surroundings, and the diverter hole 741 is opened at the highest point of the diverter plate 74.

[0068] Continue to refer to Figure 1 The cavity Q may include a cavity cover 1 and a cavity body 2 that cooperate with each other to seal, the cavity body 2 includes a first accommodating space 21 and an opening connected to the first accommodating space 21, the first accommodating space 21 is used to accommodate the carrier 6, and the cavity cover 1 and the cavity body 2 are movably matched to realize the closing and opening of the opening. The opening may be set at the top of the cavity body 2, the cavity cover 1 is set at the opening of the cavity body 2, a second accommodating space 11 may be set in the cavity cover 1, and the first uniform flow component 7 may be set in the second accommodating space 11. In other embodiments of the present application, the first uniform flow component 7 may be set in the first accommodating space 21. In other embodiments of the present application, the opening may be set on the side wall or bottom wall of the cavity body 2.

[0069] The shape of the cavity Q can be a cube or other shapes. Figure 6The shape of the cavity Q is adapted to the shape of the wafer W to reduce the size of the cavity Q. For example, it can be a cylindrical cavity adapted to the shape of the wafer W, and the axial direction of the cylindrical cavity is the arrangement direction of the wafer W. The top wall of the cavity Q is the side wall of the cylindrical cavity at the top of the first flow-uniform component 7, and the bottom wall of the cavity Q is the side wall of the cylindrical cavity at the bottom of the carrier 6. The side wall of the cavity Q includes the side wall of the cylindrical cavity except the top wall of the cavity Q and the bottom wall of the cavity Q, and also includes the end face of the cylindrical cavity.

[0070] Reference Figure 7 A first sliding member (not shown) extending from the first accommodating space 21 to the opening and a second sliding member 19 connected to the supporting member 6 can be provided in the cavity body 2. The first sliding member and the second sliding member 19 cooperate with each other to enable the supporting member 6 to slide into or leave the first accommodating space 21 in the cavity body 2. The first sliding member can be a slide rail, pulley or slide groove, etc., provided on the inner wall of the cavity body 2, and the second sliding member 19 can be a structure such as a slide groove or slide rail that is adapted to the first sliding member.

[0071] Refer again Figure 1 , the cavity cover 1 and the cavity body 2 are closed and opened by an interlocking mechanism 3 to achieve the closing and opening of the opening. The interlocking mechanism 3 can be arranged at the connection between the cavity cover 1 and the cavity body 2, and can be a structure such as a snap-on structure that can stably connect the cavity cover 1 and the cavity body 2 in a high temperature and high pressure environment, which is not limited here. At the contact position between the cavity cover 1 and the cavity body 2, a sealing ring 4 that can be elastically deformed and compressed can be provided for sealing, wherein the sealing ring 4 can be made of polytetrafluoroethylene material or other materials. Furthermore, a groove adapted to the sealing ring 4 can be provided between the cavity cover 1 and the cavity body 2 to accommodate the sealing ring 4. The cavity cover 1 and the cavity body 2 can be made of pressure-resistant and temperature-resistant materials such as high-strength stainless steel or Hastelloy to ensure that the environment inside the cavity Q can be high temperature and high pressure.

[0072] In other implementations of the present application, the interlocking mechanism 3 may be disposed above the cavity cover 1, such as Figure 8 As shown, it can be a hydraulic array, which can seal a high-temperature and high-pressure cavity. The hydraulic array sucks the cavity cover 1, presses the cavity cover 1 or drives the cavity cover 1 away from the cavity body 2 to achieve the closing, locking and opening between the cavity cover 1 and the cavity body 2. The cavity Q can be a cube. In other embodiments of the present application, the cavity Q can also be cylindrical or other shapes.

[0073] In other embodiments of the present application, refer to Fig. 9 and Fig.10The interlocking mechanism 3 can be arranged on the cavity cover 1, and pass through the cavity cover 1 to connect the cavity body 2, so as to realize the separation and closure between the cavity cover 1 and the cavity body 2, so as to realize the sealing of the high temperature and high pressure cavity. The interlocking mechanism 3 can include a locking bolt 31 and a locking pin 32, wherein the upper end of the locking bolt 31 is a head, and the lower end is a screw rod, the screw rod is passed through the cavity cover 1, and the lower end of the screw rod is fixedly connected to the corresponding position of the cavity body 2 inside the cavity body 2, so that the cavity cover 1 can move up and down along the screw rod of the locking bolt 31 without being separated, so as to realize the separation and closure between the cavity cover 1 and the cavity body 2. The locking pin 32 is arranged above the cavity cover 1 and located on the side of the locking bolt 31, and can be close to or away from the locking bolt 31. When the cavity cover 1 and the cavity body 2 are closed, the head and part of the screw of the locking bolt 31 are exposed on the cavity cover 1, and the locking pin 32 is close to the screw of the locking bolt 31 exposed above the cavity cover 1. The locking pin 32 abuts against the head of the locking bolt 31, and the length of the locking pin 32 in the vertical direction is consistent with the length of the screw of the locking bolt 31 exposed above the cavity cover 1, that is, it is locked between the head of the locking bolt 31 and the upper end surface of the cavity cover 1, so that the movement of the locking bolt 31 in the cavity cover 1 can be limited, and then the closed locking of the cavity cover 1 and the cavity body 2 is completed. The locking pin 32 is away from the screw of the locking bolt 31, and the cavity cover 1 can move upward to contact the head of the locking bolt 31, so that the cavity cover 1 can open the cavity body 2. The locking pin 32 can be driven and connected by a driving device 33, and the driving device 33 can be a motor, a cylinder or other drive. There may be multiple locking pins 32 corresponding to each locking bolt 31 , and the locking pins 32 may be controlled to make corresponding reciprocating motions by the same driving device 33 , or may be controlled to make corresponding reciprocating motions by the driving devices 33 respectively.

[0074] After the interlocking mechanism 3 is opened, the cavity cover 1 can move and move to the outside of the cavity Q, and keep the wafer W to be dried on the carrier 6. At this time, the wafer W is covered with a liquid film formed by the previous process liquid 10 to prevent the liquid on the wafer W from volatilizing and causing damage before the supercritical fluid treatment. The conveying mechanism not shown in the figure transports the wafer W or the carrier 6 carrying the wafer W to the cavity body 2. After completing the conveying, the conveying mechanism exits the cavity body 2 and moves to the outside of the cavity Q. The cavity cover 1 moves to the opening of the cavity body 2, and then moves to the locked position. The cavity cover 1 and the cavity body 2 are locked by the interlocking mechanism 3, and the cavity Q is closed to form a closed environment.

[0075] like Fig.11As shown, the carrier 6 can be a carrier plate, and a plurality of carrier grooves 61 are provided on the carrier plate. The shape of the carrier groove 61 is adapted to the side of the wafer, and is used to carry multiple vertically placed wafers W. The bottom of the carrier groove 61 is provided with a fluid through hole 62, and the fluid through hole 62 can be evenly arranged on the carrier plate, so that the supercritical dry fluid 12 can flow in from the notch of the carrier groove 61 and flow out from the bottom of the groove, so that the flow path of the supercritical dry fluid 12 is a straight line on the wafer plate surface, so that the supercritical dry fluid 12 flows evenly from the wafer plate surface. Further, a plurality of carrier grooves 61 can be arranged in parallel, and a plurality of wafers W are placed in parallel in a plurality of carrier grooves 61. The number of wafers W that can be held by the carrier plate is 1 to 100. The inventors have found that the distance between two adjacent wafers W can be 5-20 mm, such as 10 mm, 11 mm or 12 mm, etc., so that the flow path between two adjacent wafers W can be uniform and stable. The cross section of the bearing groove 61 can be designed to be U-shaped or Y-shaped, and the opening of the bearing groove 61 can be gradually reduced from the groove mouth to the groove bottom. When the wafer W is placed in the bearing groove 61, it can be placed without completely aligning it with the groove bottom of the bearing groove 61. In other implementations of the embodiments of the present application, the bearing member 6 can also be a bearing bar, a bearing block or other structures.

[0076] Continue to refer to Figure 1 The wafer drying device may further include an adjusting member 63, which may be a rotating shaft, which may be inserted into the carrier 6 and arranged perpendicularly to the arrangement direction of the wafers W. The rotating shaft rotates to drive the carrier 6 to rotate along with the side wall of the rotating shaft, so as to drive the wafers W to be tilted in the cavity Q. Fig.12 As shown, before the drying process begins, the plate surface of the wafer W with the device can be tilted upward so that the plate surface of the wafer W with the device can retain liquid, so as to avoid the wafer W from evaporating and drying before replacement, and to avoid the surface structure of the wafer W from bending, deformation, adhesion, damage, collapse and other defects during the evaporation and drying process, thereby causing device failure. In other embodiments of the present application, the groove wall of the bearing groove 61 can swing along the arrangement direction of the wafer W, the side wall of the rotating shaft is connected to the groove wall, the rotating shaft is arranged perpendicular to the arrangement direction of the wafer W, and the rotating shaft rotates to drive the groove wall to swing and thus drive the wafer W to swing, wherein the rotating shaft can be directly connected to the groove wall, the rotating shaft and the groove wall correspond one to one, or the rotating shaft can be connected to the groove wall through a connecting rod, and one rotating shaft can correspond to multiple groove walls. In other embodiments of the present application, the adjusting member 63 can be a telescopic rod arranged in the bearing groove 61, the telescopic rod is arranged on the groove wall corresponding to the plate surface of the wafer W without the device, and the telescopic rod extends or retracts the groove wall to push the wafer W to be tilted.

[0077] A supercritical drying fluid outlet 16 may also be provided on the bottom wall of the cavity Q. Under the action of gravity, the path of the supercritical drying fluid 12 may be a straight path from top to bottom, so that the flow rate of the supercritical drying fluid 12 in each area on the wafer plate surface is uniform, thereby achieving uniform drying of the wafer W. In other implementations of the embodiments of the present application, a plurality of supercritical drying fluid outlets 16 may be uniformly provided on the bottom wall of the cavity Q, for discharging the supercritical drying fluid 12 in the cavity Q.

[0078] A second flow-uniform component 8 may also be provided between the carrier 6 and the supercritical dry fluid outlet 16. After the second flow-uniform component 8 uniformly flows the supercritical dry fluid 12 flowing out of the carrier 6, it is discharged through the supercritical dry fluid outlet 16, so that the supercritical dry fluid 12 remains uniform at the carrier 6 between the first flow-uniform component 7 and the second flow-uniform component 8. The structure of the second flow-uniform component 8 may refer to the first flow-uniform component 7. The second flow-uniform component 8 may include a second baffle plate 81 and a third flow-uniform plate 82 located between the edge of the second baffle plate 81 and the side wall of the cavity Q. The second baffle plate 81 is provided corresponding to the supercritical dry fluid outlet 16 to prevent the pressure difference inside and outside the cavity Q from causing the supercritical dry fluid 12 to flow directly to the supercritical dry fluid outlet 16, thereby avoiding affecting the flow path of the supercritical dry fluid 12. In other implementations of the embodiments of the present application, the structure of the second flow-uniform component 8 may also adopt other structures different from the first flow-uniform component 7, which is not limited here.

[0079] The supercritical drying fluid outlet 16 can also be used to discharge the previous process liquid 10 replaced by the supercritical drying fluid 12. The second uniform flow component 8 can control the flow field direction of the previous process liquid 10 to reduce the liquid level fluctuation when the previous process liquid 10 is discharged, thereby avoiding contamination of the dried position on the wafer W due to the liquid level fluctuation, thereby making the wafer W and each wafer W dry uniformly. A previous process liquid outlet 17 for discharging the previous process liquid 10 can also be provided on the bottom wall of the cavity Q.

[0080] When the previous process of drying the wafer W with the supercritical drying fluid 12 is a liquid drying process, the liquid drying process can also be carried out in the chamber Q, and a previous process liquid inlet 11 for entering the previous process liquid 10 can be provided on the wall of the chamber Q. Before being dried by the previous process liquid 10, the wafer W can be treated with the liquid to be dried 13, such as a cleaning treatment, and the liquid to be dried 13 can be deionized water. When the wafer W is dried with the previous process liquid 10, the surface of the wafer W can be covered with a liquid film of the liquid to be dried 13. The surface tension of the previous process liquid 10 is less than that of the liquid to be dried 13, and it is miscible with the liquid to be dried 13, and can replace the liquid to be dried 13.

[0081] Exemplarily, the previous process liquid inlet 11 may be arranged on the side wall of the cavity Q, above the wafer W, or the supercritical drying fluid inlet 9 may also serve as the previous process liquid inlet 11, for entering the previous process liquid 10 before entering the supercritical drying fluid 12. In other implementations of the embodiments of the present application, the previous process liquid inlet 11 may be arranged on the top wall or the bottom wall of the cavity Q, and it is only necessary to ensure that the entering previous process liquid 10 can supply the fluid covering the wafer W. When the previous process liquid inlet 11 is arranged on the top wall of the cavity Q. One or more previous process liquid outlets 17 for discharging the previous process liquid 10 are also provided on the bottom wall of the cavity Q, so that the previous process liquid 10 can be discharged under the action of gravity. The supercritical drying fluid outlet 16 may also serve as the previous process liquid outlet 17.

[0082] The wafer drying device may further include a controller, and control valves connected to the controller may be provided at the supercritical drying fluid inlet 9, the supercritical drying fluid outlet 16, the previous process liquid inlet 11, and the previous process liquid outlet 17, respectively, to control the entry and discharge of the supercritical drying fluid 12 and the previous process liquid 10, so as to control the pressure of the cavity Q, thereby maintaining the supercritical state of the supercritical drying fluid 12 in the cavity Q. The wafer drying device may further include a pressure detection member (not shown) connected to the controller, and the controller may adjust the control valve according to the pressure data detected in the cavity Q. The pressure detection member may be a pressure sensor or a pressure measuring instrument, etc.

[0083] Still refer to Figure 1 A pressure relief port 18 may also be provided on the top wall of the cavity Q, which is opened after the wafer W is dried to reduce the gas pressure in the cavity Q, so that the supercritical drying fluid 12 is converted into a gaseous supercritical drying fluid, and then the gaseous supercritical drying fluid is discharged from the pressure relief port 18. In other implementations of the embodiments of the present application, the pressure relief port 18 may also be provided at other locations, such as at the upper part of the side wall of the cavity Q. In other implementations of the embodiments of the present application, the supercritical drying fluid inlet 16 may also serve as the pressure relief port 18.

[0084] A purge fluid inlet 14 may also be provided on the top wall of the cavity Q, for entering the purge fluid 15 to purge the dried cavity Q after the wafer W is dried. The first uniform flow component 7 may also be arranged between the purge fluid inlet 14 and the wafer W, and the first baffle 71 may also be arranged relative to the purge fluid inlet 14 so that the purge fluid 15 evenly purges the cavity body 2. In other embodiments of the present application, after the supercritical dry fluid 12 dries the wafer W, the pressure relief port 18 may not be opened, but the purge fluid 15 may be introduced while the supercritical dry fluid 12 is discharged to maintain the pressure in the cavity Q so that the supercritical dry fluid 12 is discharged in a supercritical state. The purge fluid 15 may be one or more of nitrogen, carbon dioxide or ultrapure compressed air, and the purge fluid 15 may also be other fluids. Correspondingly, a purge fluid outlet may also be provided on the bottom wall of the cavity Q, or the supercritical dry fluid outlet 16 and / or the previous process liquid outlet 17 may be used as a purge fluid outlet. Control valves connected to the controller may also be provided at the purge fluid inlet 14 and the purge fluid outlet to adjust the speed at which the purge fluid 15 is introduced or discharged.

[0085] A heating element 5 may also be provided on the outer wall of the cavity Q, and there may be multiple heating elements 5, uniformly surrounding the outer wall of the cavity Q. The internal environment of the cavity Q may be insulated by the heating effect of multiple heating elements 5 to assist in maintaining the supercritical state of the supercritical dry fluid 12 entering the cavity Q. In other implementations of the embodiments of the present application, the pressure relief port 18 may not be opened after the supercritical dry fluid 12 dries the wafer W, and when the supercritical dry fluid 12 is discharged, the heating effect of the heating element 5 may also be used. The supercritical dry fluid 12 is discharged in a supercritical state under high temperature and low pressure conditions.

[0086] The heating element 5 can be connected to the controller to adjust the operation of the heating element 5 as needed. Furthermore, a temperature detection element (not shown) connected to the controller can also be included. The controller adjusts the operation of the heating element 5 according to the temperature data in the cavity Q sent by the temperature detection element, wherein the connection between the temperature detection element and the controller can be a wired or wireless connection, and the temperature detection element can be a temperature sensor or a thermometer. The output power of multiple heating elements 5 can be controlled in different areas or independently to achieve dynamic control of the temperature at various locations in the cavity Q, thereby obtaining a uniform temperature field distribution. The heating element 5 can be heated electrically, or by heat conduction heating or infrared heating.

[0087] Embodiment 2

[0088] The difference between this embodiment and the first embodiment is that:

[0089] like Fig.13As shown, the first flow equalizing plate 72 is arranged in the space between the edge of the first blocking plate 71 and the side wall of the cavity Q, and its height is lower than that of the first blocking plate 71, which can also achieve a flow equalizing effect.

[0090] The rest of the structure is the same as that of the first embodiment.

[0091] Embodiment 3

[0092] The difference between this embodiment and the first embodiment is that:

[0093] like Fig.14 As shown, the height of the first flow equalizer 72 is lower than that of the first baffle plate 71, and is connected to the opposite side wall of the cavity, that is, the first flow equalizer 72 is not only arranged between the edge of the first baffle plate 71 and the side wall of the cavity, but also extends to the bottom of the first baffle plate 71. At this time, the wafer W is not only placed opposite to the first flow equalizer 72, but also placed opposite to the first baffle plate 71, so that in the process of the supercritical drying fluid 12 diffusing from the edge of the first baffle plate 71 to the wafer W, the fluid below the first baffle plate 71 can also be uniformly flowed to dry the wafer, so as to obtain higher drying efficiency.

[0094] The rest of the structure is the same as that of the first embodiment.

[0095] Embodiment 4

[0096] The difference between this embodiment and the third embodiment is that:

[0097] like Fig.15 As shown, one or more baffle plate flow-uniform holes whose size is smaller than that of the supercritical dry fluid inlet 9 can be opened on the first baffle plate 71 to increase the flow rate of the supercritical dry fluid 12 below the first baffle plate 71, so that the supercritical dry fluid 12 flowing to the first flow-uniform plate 72 is more uniform, thereby achieving a better flow-uniform effect.

[0098] Furthermore, the structure of the first baffle plate 71 is set with reference to the structure of the diverter plate 74, and the baffle plate uniform flow hole is used as the diverter flow hole 741. The first baffle plate 71 can not only block the supercritical dry fluid 12 from the supercritical dry fluid inlet 9, but also distribute the supercritical dry fluid 12 to achieve a better uniform flow effect.

[0099] The rest of the structure is the same as that of the third embodiment.

[0100] Embodiment 5

[0101] This embodiment provides a wafer drying method, which is implemented by using the wafer drying device described in any of the above embodiments. Fig.16 As shown, it at least includes steps S1 to S3, which are specifically described as follows:

[0102] S1: vertically inserting a plurality of wafers W into a carrier 6 in a cavity Q of a wafer drying device, and the plurality of wafers W are arranged in a horizontal direction in the carrier 6 .

[0103] The plurality of wafers W are arranged in parallel in the carrier 6 , and the surfaces of two adjacent wafers are arranged opposite to each other, which can save space.

[0104] When the cavity Q is open, the wafer W is transported to the first accommodating space 21 of the cavity body 2 by a conveying part (not shown). After completing the transport, the conveying part exits the cavity body 2 to the outside of the cavity Q, and the interlocking mechanism 3 locks and closes the cavity Q, forming a closed environment.

[0105] The wafer W may be transported from outside the cavity Q to the carrier 6 in the first accommodation space 21 , or the wafer W may be transported into the carrier 6 and then the carrier 6 is transported from outside the cavity Q to the first accommodation space 21 .

[0106] The surface of the wafer W in the carrier 6 may be covered with a pre-process liquid 10 to prevent the wafer W with the device from drying out prematurely and causing the device to collapse or tilt. The wafer W in the carrier 6 may be adjusted to a certain angle by an adjusting member 64, such as Fig.12 As shown, the surface of the wafer W on which the devices are provided is tilted upward to keep the surface of the wafer W on which the devices are provided with the pre-process liquid 10 .

[0107] S2: The supercritical dry fluid 12 is introduced into the cavity Q through the supercritical dry fluid inlet 9 arranged on the top wall of the cavity Q.

[0108] The supercritical drying fluid 12 is blocked by the first blocking plate 71 in the first flow equalizer component 7, diffuses to the first flow equalizer plate 72 in the first flow equalizer component 7, and then flows into the carrier 6 from the first flow equalizer plate 72, and flows from the side of the wafer to the wafer surface to dry the wafer W, wherein the first blocking plate 71 is arranged opposite to the supercritical drying fluid inlet 9, and the first flow equalizer plate 72 is located between the edge of the first blocking plate 71 and the side wall of the cavity Q.

[0109] The surface tension of the supercritical drying fluid 12 is smaller than that of the previous process liquid 10, and it has extremely strong diffusivity and solubility. Therefore, after a set time, the previous process liquid 10 can be mutually dissolved and replaced from the wafer plate surface, and the previous process liquid 10 forms a triangle under the action of gravity. The cavity Q can be filled with the supercritical drying fluid 12 and then maintained for a first set time; or the supercritical drying fluid 12 can be introduced into the cavity Q for a second set time; or the cavity Q can be filled with the supercritical drying fluid 12 and then the supercritical drying fluid 12 can be introduced into the cavity Q for a third set time, wherein the first set time, the second set time and the third set time can be determined according to the drying degree of the wafer W, and the first set time, the second set time and the third set time can be the same or different.

[0110] In the process of filling the cavity Q with the supercritical drying fluid 12, the previous process liquid 10 can be discharged through the supercritical drying fluid outlet 16, the previous process liquid outlet 17 or other outlets. The discharge of the supercritical previous process liquid 10 and the entry of the supercritical drying fluid 12 can be controlled to reduce the shaking and contamination of the wafer W caused by the fluctuation of the previous process liquid 10 in the cavity Q. At the same time, the uniform flow of the supercritical drying fluid 12 can also be adjusted to prevent uneven drying of the wafer W. The flow rate of the previous process liquid 10 is preferably set to 5 to 100 Lpm, and the direction is vertically downward to prevent the discharge speed from being too fast or uneven, so that the two sides of the wafer W will be shaken or contaminated by the uneven pulling force of the fluid.

[0111] During the process of drying the wafer W by the supercritical drying fluid 12, the cavity Q can be heated by the heating element 5 uniformly surrounding the outer wall of the cavity Q to control the temperature of the cavity side wall and various places inside to ensure uniform temperature field distribution to maintain the supercritical state of the supercritical drying fluid 12.

[0112] Continue to refer to Fig.16 , S3: discharge the supercritical drying fluid.

[0113] After the supercritical dry fluid 12 fills the cavity Q or fills the cavity Q for a certain period of time, the cavity Q can be depressurized through the pressure relief port 18 provided on the top wall or the upper part of the side wall of the cavity Q, so that the supercritical dry fluid 12 becomes a gaseous supercritical dry fluid, and the gaseous supercritical dry fluid is discharged from the pressure relief port 18. In other implementations of the embodiments of the present application, whether to discharge the supercritical dry fluid 12 can also be determined according to the degree of drying of the wafer W.

[0114] like Fig.17 As shown, after the wafer W is dried, the purge fluid inlet 14 can be opened to supply the purge fluid 15 into the cavity Q to purge the wafer W and the inside of the cavity Q, so as to further remove the supercritical drying fluid 12 remaining in the wafer W and the cavity Q, and control and reduce the residual concentration; a concentration or component detection device not shown can be used to detect the gas concentration and composition in the cavity Q, and after it reaches the set range, the purge fluid inlet 14 is closed. In other implementations of the embodiments of the present application, when discharging the supercritical drying fluid 12, the pressure relief port 18 may not be opened, but the pressure in the cavity Q may be increased by supplying the purge fluid 15, and the supercritical drying fluid 12 may be discharged through the supercritical drying fluid outlet 16 provided on the bottom wall of the cavity Q, so that the supercritical drying fluid 12 is kept in a supercritical state when discharged.

[0115] In other implementations of the embodiments of the present application, when the supercritical dry fluid 12 is discharged, the pressure relief port 18 may not be opened, but the supercritical dry fluid 12 is discharged through the supercritical dry fluid outlet 16 provided on the bottom wall of the cavity Q. In this process, the air pressure in the cavity Q is reduced, and the cavity Q can be heated by the heating element 5 to adjust the temperature in the cavity Q so that the cavity Q is kept in a high temperature and low pressure state, so that the supercritical dry fluid 12 is kept in a supercritical state when discharged. After the wafer W is dried, the interlocking mechanism 3 is opened, the closed lock of the cavity Q is released, the cavity cover 1 is moved to the outside of the cavity Q, and the conveying mechanism (not shown) moves to the first accommodation space 21 of the cavity body 2, and the processed wafer W is moved out of the first accommodation space 21 of the cavity body 2.

[0116] Embodiment 6

[0117] The difference between this embodiment and the fifth embodiment is that:

[0118] Reference Fig.18 Before step S2: introducing the supercritical drying fluid 12 into the cavity Q through the supercritical drying fluid inlet 9 arranged on the top wall of the cavity, step S4 may also be included: introducing the previous process liquid 10 into the cavity Q through the previous process liquid inlet 11.

[0119] Before step S4 is performed, the surface of the wafer W is covered with the liquid 13 to be dried, and the wafer W can be tilted to prevent the board surface of the wafer W with the device from drying in advance, causing the device to collapse, tilt, etc. The surface tension of the previous process liquid 10 is less than the surface tension of the liquid 13 to be dried, and the surface tension of the previous process liquid 10 is greater than the surface tension of the supercritical drying fluid 12. Therefore, the previous process liquid 10 can replace the liquid 13 to be dried, and then step S2 is performed, and the supercritical drying fluid 12 can replace the previous process liquid 10, so that the wafer W is dried.

[0120] The previous process liquid 10 can be introduced into the cavity Q through the previous process liquid inlet 11, and the liquid to be dried 13 can be discharged at the same time, until the previous process liquid 10 reaches a set height or the previous process liquid 10 fills the cavity Q or the previous process liquid 10 is introduced for a drying time, so that the previous process liquid 10 completely replaces the liquid to be dried 13 on the wafer W, and then the previous process liquid 10 is discharged, and the supercritical drying fluid 12 is introduced into the cavity Q at the same time, so that the previous process liquid 10 can be quickly replaced from the wafer W, and the previous process liquid 10 can be prevented from evaporating on the wafer W and causing the device on the wafer W to tilt or collapse, etc., wherein the discharge amount of the previous process liquid 10 can be synchronized with the inflow amount of the supercritical drying fluid 12, and the drying time can be determined according to the amount of the liquid to be dried 13 on the wafer W. In other implementations of the embodiments of the present application, the previous process liquid 10 can be discharged while being introduced into the cavity Q, and the wafer is dried only through the flow path.

[0121] The liquid level fluctuation in the cavity Q can be reduced by adjusting the discharge speed and flow direction of the liquid to be dried 13 and the previous process liquid 10 , and adjusting the entry speed and flow direction of the previous process liquid 10 and the liquid to be dried 13 .

[0122] In this process, when the liquid level of the previous process liquid 10 drops to the point where the wafer W contacts the supercritical drying fluid 12, Fig.19 As shown, the previous process liquid 10 covering the upper surface of the wafer W will be replaced by the supercritical drying fluid 12 with lower surface tension. At this time, a dried portion W1 of the upper surface of the wafer W in the cavity Q is formed, a drying portion W2 covered by the previous process liquid 10 that has not been replaced and dried by the supercritical drying fluid 12, and an undried portion W3 soaked by the liquid to be dried 13, wherein the previous process liquid 10 covering the upper part of the drying portion W2 forms a triangle under the action of gravity.

[0123] In other implementations of the embodiments of the present application, step S2 can be performed after step S4, that is, the previous process liquid 10 is first introduced into the cavity Q through the previous process liquid inlet 11 until the previous process liquid 10 reaches a set height or fills the cavity Q, and the set height is a height that can cover the wafer W, and then the wafer W is placed in the cavity Q.

[0124] The remaining steps are the same as those in Example 5.

[0125] The present application adopts a supercritical fluid drying device and method, adopts a drying method from the side of the wafer to the wafer plate surface, and realizes uniform distribution and uniform discharge of the fluid through the designed first uniform flow component 7 and the second uniform flow component 8, ensuring the liquid level stability and uniformity of the liquid replacement, drying process and subsequent purge process, and realizing uniform drying of multiple wafers W in the same cavity Q at the same time, greatly improving the drying efficiency and production capacity, and ensuring the uniform decrease of the pressure in the cavity Q during the liquid discharge process, eliminating the problem of uneven surface tension of the wafer W, ensuring the stability of the wafer W, and solving the problems of bending deformation, adhesion, damage, collapse and other problems of three-dimensional structural graphics with fine and high aspect ratio during drying, providing a feasible, efficient, low-cost and high-safety drying method.

[0126] The preferred embodiments of the present application are described in detail above, but the present application is not limited to the specific details of the above embodiments. Within the technical concept of the present application, various equivalent transformations (such as quantity, shape, position, etc.) can be made to the technical scheme of the present application, and these equivalent transformations all belong to the protection scope of the present application.

Claims

1. A wafer drying device, characterized in that: include: Cavity; A supercritical dry fluid inlet is arranged on the top wall of the cavity and is used to provide supercritical dry fluid into the cavity; A carrier, used for carrying a plurality of vertically placed wafers, wherein the plurality of wafers are arranged at intervals in the horizontal direction in the carrier; A first flow-uniform component is disposed between the supercritical dry fluid inlet and the wafer, comprising a first baffle plate disposed opposite to the supercritical dry fluid inlet, and a first flow-uniform plate located between the first baffle plate and the side wall of the chamber, wherein the first flow-uniform plate is provided with a first flow-uniform hole; When the supercritical drying fluid enters the cavity, the supercritical drying fluid diffuses to the first flow equalizing plate through the first blocking plate and then flows from the side of the wafer to the wafer plate surface through the first flow equalizing hole to dry the wafer.

2. The wafer drying device according to claim 1, characterized in that: The first flow homogenizing plate and the first blocking plate are arranged on the same plane.

3. The wafer drying device according to claim 2, characterized in that: The first flow uniforming plate connects the first blocking plate and the side wall of the cavity.

4. The wafer drying device according to claim 1, characterized in that: The height of the first flow equalizer plate is lower than that of the first blocking plate.

5. The wafer drying device according to claim 4, characterized in that: The first flow distribution plate is extended and arranged below the first blocking plate.

6. The wafer drying device according to claim 5, characterized in that: The first baffle plate is provided with a baffle plate flow-uniform hole whose size is smaller than the inlet size of the supercritical drying fluid.

7. The wafer drying device according to claim 1, characterized in that: The wafer is placed on the carrier at a position opposite to the first flow-distributing hole.

8. The wafer drying device according to claim 1, characterized in that: The first flow equalizing assembly further includes a second flow equalizing plate whose height is lower than that of the first flow equalizing plate. The second flow equalizing plate is provided with second flow equalizing holes, and the second flow equalizing holes are staggered with the first flow equalizing holes.

9. The wafer drying device according to claim 8, characterized in that: The second flow equalizer is connected to the side wall of the cavity.

10. The wafer drying device according to claim 1, characterized in that: The first flow-uniform component further includes a flow divider plate disposed between the first baffle plate and the supercritical dry fluid inlet, the flow divider plate being provided with a flow divider hole and an air flow groove connected to the flow divider hole, and the air flow groove being disposed on a surface opposite to the first baffle plate.

11. The wafer drying device according to claim 10, characterized in that: The edge of the diverter plate extends toward the side wall of the cavity; the airflow groove includes a main groove and a diverter groove, the diverter flow hole is arranged in the main groove, the diverter groove is connected to the main groove, and extends from the main groove to the edge of the diverter plate.

12. The wafer drying device according to claim 11, characterized in that: The edge of the diverter plate is connected to the side wall of the cavity.

13. The wafer drying device according to claim 1, characterized in that: The distance between two adjacent wafers is 5-20 mm.

14. The wafer drying device according to claim 1, characterized in that: It also includes a supercritical dry fluid outlet arranged on the bottom wall of the cavity, and the device also includes: a second flow uniforming component arranged between the carrier and the supercritical dry fluid outlet.

15. The wafer drying device according to claim 14, characterized in that: The second flow-uniform component comprises: a second baffle plate arranged opposite to the supercritical dry fluid outlet, and a third flow-uniform plate arranged between the edge of the second baffle plate and the side wall of the cavity. When the supercritical dry fluid is discharged from the cavity, the supercritical dry fluid corresponding to the supercritical dry fluid outlet is blocked by the second baffle plate, diffuses to the third flow-uniform plate, and then flows out from the supercritical dry fluid outlet.

16. The wafer drying device according to claim 1, characterized in that: Also includes: The pressure relief port is arranged on the top wall of the cavity or the upper part of the side wall of the cavity, connected to the cavity, and used for discharging the supercritical drying fluid that has become a gas phase fluid.

17. The wafer drying device according to claim 1, characterized in that: The cavity is a cylindrical cavity adapted to the shape of the wafer.

18. The wafer drying device according to claim 1, characterized in that: The carrier is provided with a plurality of carrying grooves for carrying a plurality of wafers, and the bottom of the carrying grooves is provided with fluid through holes.

19. A wafer drying method, characterized in that: include: Inserting a plurality of wafers vertically into a carrier in a cavity of a wafer drying device, wherein the plurality of wafers are arranged at intervals in a horizontal direction in the carrier; A supercritical drying fluid is introduced into the cavity through a supercritical drying fluid inlet of the wafer drying device, so that the supercritical drying fluid diffuses through the first blocking plate to the first flow-distributing plate and then flows from the side of the wafer to the wafer surface; The supercritical drying fluid is discharged.

20. The wafer drying method according to claim 19, characterized in that: The temperature of the supercritical drying fluid introduced into the supercritical drying fluid inlet is 15-150° C., and the introduction pressure is 0.1-25 MPa.

21. The wafer drying method according to claim 19, characterized in that: Before the step of introducing the supercritical drying fluid into the cavity through the supercritical drying fluid inlet, the method further includes: introducing a pre-process liquid into the cavity through the pre-process liquid inlet of the wafer drying device, wherein the surface tension of the pre-process liquid is greater than the surface tension of the supercritical drying fluid.

22. The wafer drying method according to claim 19, characterized in that: Before the step of vertically inserting multiple wafers into a carrier in the cavity of a wafer drying device, the method also includes: introducing a pre-process liquid into the cavity through a pre-process liquid inlet of the wafer drying device until the pre-process liquid reaches a set height, wherein the set height is determined according to the size of the wafers, and the surface tension of the pre-process liquid is greater than the surface tension of the supercritical drying fluid.

23. The wafer drying method according to claim 19, characterized in that: The step of introducing the supercritical drying fluid into the cavity through the supercritical drying fluid inlet of the wafer drying device includes: introducing the supercritical drying fluid into the cavity through the supercritical drying fluid inlet until the supercritical drying fluid in the cavity reaches a supercritical state; discharging the previous process liquid in the cavity through the previous process liquid outlet of the wafer drying device, while continuing to introduce the supercritical drying fluid into the cavity, and the supercritical drying fluid maintains the supercritical state in the cavity until the wafer drying is completed.

24. The wafer drying method according to claim 23, characterized in that: The step of discharging the pre-process liquid in the chamber through the pre-process liquid outlet of the wafer drying device includes: the discharge flow rate of the pre-process liquid is 5 to 100 Lpm, and the direction is vertically downward.

25. The wafer drying method according to claim 19, characterized in that: The step of discharging the supercritical dry fluid includes: discharging the supercritical dry fluid from the supercritical dry fluid outlet of the wafer drying device, and adjusting the temperature in the chamber by a heating element of the wafer drying device to maintain the supercritical state of the supercritical dry fluid.

26. The wafer drying method according to claim 19, characterized in that: The step of discharging the supercritical dry fluid includes: opening a pressure relief port disposed on the top wall of the cavity to reduce the pressure of the cavity so that the supercritical dry fluid becomes a gas-phase supercritical dry fluid, and discharging the gas-phase supercritical dry fluid through the pressure relief port.

27. The wafer drying method according to claim 19, characterized in that: The step of discharging the supercritical drying fluid includes: discharging the supercritical drying fluid from the supercritical drying fluid outlet of the wafer drying device, and introducing a purge fluid into the cavity from the purge fluid inlet of the wafer drying device to maintain the pressure of the cavity so that the supercritical drying fluid remains in a supercritical state until the supercritical drying fluid is completely discharged.

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