Substrate processing apparatus and substrate processing method

Abstract

The invention discloses a substrate processing apparatus and a substrate processing method. The apparatus includes: a chamber for providing a processing space for processing a substrate; and a processing fluid supply unit for supplying a processing fluid to the processing space, in which the processing fluid supply unit comprises: a tank for storing the processing fluid; a heating unit for heating the treatment fluid in the tank to change the treatment fluid from a first state to a second state; an inlet line for introducing a treatment fluid in a first state into the tank; a supply line for supplying a process fluid in a second state from the tank to the chamber; a circulation line for circulating the treatment fluid in the tank; a first valve installed in the circulation line; and a temperature reducing member installed in the circulation line to reduce the temperature of the process fluid flowing through the circulation line.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0114592 filed in the Korean Intellectual Property Office on August 30, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to an apparatus for processing a substrate and a method for processing a substrate using a supercritical fluid. Background Art

[0004] In order to manufacture semiconductor devices, a desired pattern is formed on a substrate (such as a wafer) through various processes such as photography, etching, ashing, ion implantation, and thin film deposition. Various processing solutions and processing gases are used in each process. In addition, a drying process is performed on the substrate to remove the processing solution used to process the substrate from the substrate.

[0005] Generally, a drying process for removing the processing solution from the substrate includes removing the processing solution remaining on the substrate using a centrifugal force of rotating the substrate, or removing the processing solution remaining on the substrate by using a supercritical fluid.

[0006] The supercritical drying process involves loading the substrate into a chamber capable of maintaining a high pressure, high temperature atmosphere, and then supplying supercritical carbon dioxide to the substrate to remove any residual processing solution (eg, organic solvent or developer solvent) from the substrate.

[0007] In order to perform the supercritical drying process, the treatment fluid in the supercritical state is supplied from the tank storing the treatment fluid in the supercritical state to the chamber performing the supercritical drying process chamber, and then the tank is refilled with the treatment fluid in the liquid state. Since the temperature of the liquid is relatively lower than the treatment fluid in the supercritical state, the temperature of the treatment fluid in the supercritical state is reduced. In this case, the result of the supercritical drying process is sensitive to the temperature of the treatment fluid in the supercritical state, so it is necessary to constantly control the temperature of the treatment fluid in the supercritical state. Therefore, in order to compensate for the temperature drop and the phase change of the fluid from the liquid state to the supercritical state, it is accompanied by a process of heating with a heater installed in the tank. However, during the heating process, the temperature of the treatment fluid in the supercritical state can be increased to a temperature higher than that required for the drying process. Therefore, the pressure of the tank is also increased, and usually, in order to control the temperature of the treatment fluid in the supercritical state, when the tank reaches the set pressure, the treatment fluid in the supercritical state is discharged to the outside of the tank. After discharge, the process is repeated by refilling the tank with a low-temperature liquid and controlling the temperature of the treatment fluid in the supercritical state. In such a typical method, there is a problem that the treatment fluid in a supercritical state is wasted in the process of controlling the temperature of the treatment fluid in a supercritical state in a tank. Summary of the invention

[0008] The present invention is directed to providing a substrate processing apparatus and a substrate processing method capable of effectively processing a substrate.

[0009] The present invention is also directed to providing a substrate processing device and a substrate processing method capable of effectively controlling the temperature of a supercritical fluid in a tank.

[0010] The present invention is also directed to providing a substrate processing device and a substrate processing method which can effectively reduce the waste of supercritical fluid in a tank.

[0011] The objects of the present invention are not limited thereto, and other objects not mentioned will be clearly understood from the following description by those of ordinary skill in the art.

[0012] An exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a chamber for providing a processing space for processing the substrate; and a processing fluid supply unit for supplying the processing fluid to the processing space; wherein the processing fluid supply unit comprises: a tank for storing the processing fluid; a heating unit for heating the processing fluid in the tank to change the processing fluid from a first state to a second state; an inlet line for introducing the processing fluid in the first state into the tank; a supply line for supplying the processing fluid in the second state from the tank to the chamber; a circulation line for circulating the processing fluid in the tank; a first valve installed in the circulation line; and a temperature reducing member installed in the circulation line to reduce the temperature of the processing fluid flowing through the circulation line.

[0013] According to an exemplary embodiment, the temperature dropping member may include a temperature dropping channel having an area narrower than an area of ​​a channel through which the process fluid flows in the circulation line.

[0014] According to an exemplary embodiment, the temperature dropping member may include an orifice.

[0015] According to an exemplary embodiment, the temperature drop channel may include: a contraction portion having a gradually narrowing cross-sectional area along the longitudinal direction of the temperature drop channel in a direction from upstream to downstream; and an expansion portion having a gradually widening cross-sectional area along the longitudinal direction of the channel in a direction from upstream to downstream, and the contraction portion is located upstream of the expansion portion.

[0016] According to an exemplary embodiment, the temperature dropping passage may further include a connection portion connecting the contraction portion and the expansion portion, and the connection portion has a constant cross-sectional area in a longitudinal direction of the temperature dropping passage.

[0017] According to an exemplary embodiment, a temperature dropping member may be provided to change the treatment fluid in the first state into the treatment fluid in the third state.

[0018] According to an exemplary embodiment, the first state may be a liquid state, the second state may be a supercritical state, and the third state may be a gaseous state.

[0019] According to an exemplary embodiment, the circulation line may be provided in a separated state from the supply line.

[0020] According to an exemplary embodiment, the apparatus may further include: a pressure sensor for measuring the pressure in the tank; and a controller, wherein the controller receives a measurement value measured from the pressure sensor and controls the first valve based on the measurement value.

[0021] According to an exemplary embodiment, the controller may control the first valve to open when the measured value exceeds a preset pressure.

[0022] According to an exemplary embodiment, the apparatus may further include: a second valve installed in the supply line to open and close the supply line; a temperature sensor for measuring the temperature of the processing fluid; and a controller, wherein the controller controls the second valve to open when the temperature measured by the temperature sensor satisfies a preset range when processing the substrate.

[0023] Another exemplary embodiment of the present invention provides a method for processing a substrate, the method comprising: an introduction operation, which introduces a processing fluid in a first state into a tank; a state change operation, which changes the processing fluid in the first state to a second state; and a supply operation, which supplies the processing fluid in the second state into a chamber for processing the substrate, wherein, after the state change operation, a circulation operation is performed to circulate the processing fluid in the second state through a circulation line connected to the tank, so that when the pressure in the tank exceeds a preset pressure, the temperature of the processing fluid in the second state in the tank is reduced.

[0024] According to an exemplary embodiment, in a cycle operation, the area of ​​the channel may be changed while the treatment fluid in the second state flows, so that the treatment fluid in the second state may be changed to the treatment fluid in the third state by a temperature drop.

[0025] According to an exemplary embodiment, in a cycle operation, the treatment fluid in the second state may be compressed, and the compressed treatment fluid in the second state may be expanded again, so that a temperature drop of the treatment fluid in the second state may be achieved.

[0026] According to an exemplary embodiment, the second state may be a supercritical state, and the third state may be a gaseous state.

[0027] According to an exemplary embodiment, the supplying operation may include measuring a temperature of the processing fluid in the second state while processing the substrate, and supplying the processing fluid in the second state into the chamber when the measured temperature value satisfies a preset temperature range.

[0028] According to an exemplary embodiment, the process may be a process of drying the substrate using the process fluid in the second state.

[0029] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a chamber for providing a processing space for processing the substrate; and a processing fluid supply unit for supplying the processing fluid to the processing space, wherein the processing fluid supply unit comprises: a tank for storing the processing fluid; a pressure sensor for measuring the pressure in the tank; a heating unit for heating the fluid to change the processing fluid in the tank from a liquid state to a supercritical state; an inlet pipeline for introducing the processing fluid in a liquid state into the tank; a circulation A pipeline, which is provided in a state separated from the supply pipeline and is used to circulate the treatment fluid in the tank; a first valve, which is installed in the circulation pipeline to open and close the circulation pipeline; a temperature reduction component, which is installed in the circulation pipeline to reduce the temperature of the treatment fluid flowing through the circulation pipeline; the supply pipeline, which is used to supply the treatment fluid in a supercritical state from the tank to the chamber; and a controller, wherein the temperature reduction component changes the treatment fluid in a supercritical state into a gas state, and the controller receives a pressure value measured by a pressure sensor and opens the first valve when the pressure value exceeds a preset pressure.

[0030] According to an exemplary embodiment, the temperature reduction member may include: a contraction portion that gradually becomes smaller in a direction from upstream to downstream of the circulation pipeline; an expansion portion that gradually becomes larger in a direction from upstream to downstream of the circulation pipeline; and a connecting portion that connects the contraction portion and the expansion portion, and the contraction portion is located upstream of the expansion portion.

[0031] According to an exemplary embodiment, the temperature dropping member may include an orifice.

[0032] According to the exemplary embodiments of the present invention, a substrate can be efficiently processed.

[0033] Further, according to the exemplary embodiment of the present invention, the temperature of the treatment fluid in the supercritical state can be effectively maintained.

[0034] Further, according to the exemplary embodiment of the present invention, the treatment fluid in a supercritical state can be effectively stored.

[0035] Further, according to the exemplary embodiment of the present invention, the reproducibility of the drying process can be ensured.

[0036] The effects of the present invention are not limited to those described above, and undescribed effects will be apparent to those skilled in the art based on the present specification and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 FIG. 1 is a top plan view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0038] Figure 2 To schematically show Figure 1 A cross-sectional view of an exemplary embodiment of a liquid processing chamber.

[0039] Figure 3 To schematically show Figure 1 sectional view of an exemplary embodiment of a drying chamber.

[0040] Figure 4 To schematically show Figure 3 A cross-sectional view of an exemplary embodiment of a process fluid supply unit.

[0041] Figure 5 To schematically show Figure 4 sectional view of an exemplary embodiment of a temperature reducing member provided in a process fluid supply unit of FIG.

[0042] Figure 6 is a flow chart illustrating a substrate processing method according to an exemplary embodiment of the present invention.

[0043] Figure 7 FIG. 4 is a graph showing the temperature of a treatment fluid stored in a tank over time according to an exemplary embodiment of the present invention.

[0044] Figure 8 To schematically show Figure 5 FIG. 2 is a cross-sectional view of another exemplary embodiment of a temperature dropping member.

[0045] Fig. 9 To schematically show Figure 5 A cross-sectional view of another exemplary embodiment of a temperature dropping member.

[0046] Fig.10 To schematically show Figure 5 FIG. 2 is a cross-sectional view of another exemplary embodiment of a temperature dropping member.

[0047] Fig.11 To schematically show Figure 5FIG. 2 is a cross-sectional view of another exemplary embodiment of a temperature dropping member. DETAILED DESCRIPTION

[0048] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments are provided so that the disclosure is thorough and the scope is fully conveyed to those skilled in the art. Many specific details (such as examples of specific components, equipment and methods) are set forth to provide a thorough understanding of the embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details do not need to be adopted, and example embodiments can be embodied in many different forms, and specific details should not be construed as limiting the scope of the present disclosure. In some example embodiments, known processes, known equipment structures and known technologies are not described in detail.

[0049] The terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" may be intended to include plural forms. The terms "comprises, comprising", "including" and "having" are inclusive and therefore specifically refer to the presence of the features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof. Unless explicitly identified as an execution order, the method steps, processes and operations described herein should not be interpreted as having to be performed in the specific order discussed or illustrated. It should also be understood that additional or alternative steps may be adopted.

[0050] When an element or layer is referred to as being "on another element or layer," "engaged to another element or layer," "connected to another element or layer," or "coupled to another element or layer," the element or layer may be directly on another element or layer, directly engaged to another element or layer, directly connected to another element or layer, or directly coupled to another element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as being "directly on another element or layer," "directly engaged to another element or layer," "directly connected to another element or layer," or "directly coupled to another element or layer," there may be no intermediate elements or layers. Other words used to describe the relationship between elements should be interpreted similarly (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0051] Although the terms "first", "second", "third", etc. can be used in this article to describe different elements, components, regions, layers and / or sections, unless otherwise specified, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer and / or section from another region, layer or section. When used in this article, unless the context clearly indicates, terms such as "first", "second" and other numerical items do not imply order or sequence. Therefore, without departing from the teaching of the example embodiment, the first element, first component, first region, first layer or first section discussed below can be referred to as the second element, second component, second region, second layer or second section.

[0052] For ease of description, spatially relative terms such as "inside," "outside," "below," "beneath," "below," "above," and the like may be used herein to describe the relationship of one element or feature to another element or feature, as shown in the figures. Spatially relative terms may be intended to encompass different orientations of the device in use or operation in addition to the orientations described in the accompanying drawings. For example, if the device in the figure is flipped, an element described as being "below" or "beneath" other elements or features will subsequently be oriented to be "above" the other elements or features. Thus, the example term "below" is able to encompass both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or oriented in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0053] When the terms "same" or "identical" are used in the description of the exemplary embodiments, it should be understood that some imprecision may exist. Thus, when an element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance range (e.g., ±10%).

[0054] When the term "approximately" or "substantially" is used with a numerical value, it should be understood that the associated numerical value includes a manufacturing or operating tolerance (e.g., ±10%) around the numerical value. In addition, when the words "generally" and "substantially" are used in connection with geometric shapes, it should be understood that the precision of the geometric shape is not required, but the latitude of the shape is within the scope of the present disclosure.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments belong. It should also be understood that terms (including those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0056] In the following, reference will be made to Figures 1 to 11 Exemplary embodiments of the present invention are described.

[0057] Figure 1 FIG. 1 is a top plan view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0058] See also Figure 1 , the substrate processing apparatus includes an index module 10, a processing module 20, and a controller 30. When viewed from above, the index module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are arranged is referred to as a first direction X, and when viewed from above, a direction perpendicular to the first direction X is referred to as a second direction Y, and a direction perpendicular to both the first direction X and the second direction Y is referred to as a third direction Z.

[0059] The index module 10 transfers the substrate W from the container C containing the substrate W therein to the process module 20, and contains the substrate W that has been completely processed in the process module 20 into the container C. The longitudinal direction of the index module 10 is set in the second direction Y. The index module 10 includes a loading port 12 and an index frame 14. The loading port 12 is located at an opposite side of the process module 20 with respect to the index frame 14. The container C containing the substrate W therein is placed in the loading port 12. A plurality of loading ports 12 may be provided, and the plurality of loading ports 12 may be arranged along the second direction Y.

[0060] An airtight container such as a Front Open Unified Pod (FOUP) may be used as the container C. The container C may be placed on the load port 12 by a transport device (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator.

[0061] The index robot 120 is provided to the index frame 14. A guide rail 124 (whose longitudinal direction is provided in the second direction Y) is provided inside the index frame 14, and the index robot 120 may be provided to be movable on the guide rail 124. The index robot 120 includes a hand 122 on which the substrate W is placed, and the hand 122 may be provided to be movable in the forward and backward directions, rotatable around the third direction Z, and movable along the third direction Z. A plurality of hands 122 are provided while being spaced apart from each other in the vertical direction, and the hands are independently movable forward and backward.

[0062] The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides a space where the substrate W loaded into the processing module 20 and the substrate W unloaded from the processing module 20 temporarily stay. The liquid processing chamber 400 performs a liquid processing process for processing the substrate W with liquid by supplying liquid onto the substrate W. The drying chamber 500 performs a drying process for removing liquid remaining on the substrate W. The transfer chamber 300 transfers the substrate W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0063] The longitudinal direction of the transfer chamber 300 may be disposed in the first direction X. The buffer unit 200 may be disposed between the index module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 may be disposed on a side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 may be disposed along the second direction Y. The drying chamber 500 and the transfer chamber 300 may be disposed along the second direction Y. The buffer unit 200 may be located at one end of the transfer chamber 300.

[0064] According to one example, the liquid processing chamber 400 is disposed on opposite sides of the transfer chamber 300 , and the drying chamber 500 is disposed on opposite sides of the transfer chamber 300 , and the liquid processing chamber 400 may be disposed closer to the buffer unit 200 than the drying chamber 500 .

[0065] At one side and / or the other side of the transfer chamber 300, the liquid processing chamber 400 may be arranged in an A×B (each of A and B is a natural number of 1 or greater than 1) arrangement in the first direction X and the third direction Z. Further, at one side and / or the other side of the transfer chamber 300, the drying chamber 500 may be arranged in a C×D (each of C and D is a natural number of 1 or greater than 1) number in the first direction X and the third direction Z. Further, at one side and / or the other side of the transfer chamber 300, the post-processing chamber 600 may be arranged in a E×F (each of E and F is a natural number of 1 or greater than 1) number in the first direction X and the third direction Z.

[0066] The transfer chamber 300 includes a transfer robot 320. A guide rail 324 (whose longitudinal direction is set in the first direction X) is provided in the transfer chamber 300, and the transfer robot 320 may be provided to be movable on the guide rail 324. The transfer robot 320 includes a hand 322 on which the substrate W is placed, and the hand 322 may be provided to be movable in the forward and backward directions, rotatable around the third direction Z, and movable along the third direction Z. A plurality of hands 322 may be provided to be spaced apart from each other in the vertical direction, and the hands 322 may be moved forward and backward independently of each other.

[0067] The buffer unit 200 includes a plurality of buffer zones 220 on which the substrate W is placed. The buffer zones 220 may be arranged to be spaced apart from each other along the third direction Z. The front and rear of the buffer unit 200 are open. The front is a surface facing the index module 10, and the rear is a surface facing the transfer chamber 300. The index robot 120 may approach the buffer unit 200 through the front, and the transfer robot 320 may approach the buffer unit 200 through the rear.

[0068] Figure 2 To schematically show Figure 1 FIG. 1 is a diagram of an exemplary embodiment of a liquid processing chamber.

[0069] See also Figure 2 The liquid processing chamber 400 includes a housing 410 , a cup 420 , a supporting unit 440 , a liquid supply unit 460 , and a lifting unit 480 .

[0070] The housing 410 may have an inner space for processing the substrate W. The housing 410 may have a substantially hexahedral shape. For example, the housing 410 may have a cubic shape. Further, the housing 410 may have an opening (not shown) through which the substrate W is loaded or unloaded. Further, the housing 410 may be equipped with a door (not shown) that selectively opens and closes the opening.

[0071] The cup 420 may have a barrel shape with an open top. The cup 420 has a processing space, and liquid processing is performed on the substrate W in the processing space. The support unit 440 supports the substrate W in the processing space. The liquid supply unit 460 supplies a processing solution to the substrate W supported on the support unit 440. The processing solution may be provided in a plurality of types and may be sequentially supplied to the substrate W. The lifting unit 480 adjusts the relative height between the cup 420 and the support unit 440.

[0072] According to an example, the cup 420 includes a plurality of collection containers 422, 424, and 426. Each of the collection containers 422, 424, and 426 has a collection space for collecting liquid for processing a substrate. Each of the collection containers 422, 424, and 426 is provided in a shape surrounding the support unit 440. As the liquid treatment process proceeds, the treatment solution sputtered by the rotation of the substrate W enters the collection space through the inlets 422a, 424a, and 426a of the corresponding collection containers 422, 424, and 426. In one example, the cup 420 includes a first collection container 422, a second collection container 424, and a third collection container 426. The first collection container 422 is provided to surround the support unit 440, the second collection container 424 is provided to surround the first collection container 422, and the third collection container 426 is provided to surround the second collection container 424. The second inlet 424a introducing liquid into the second collection container 424 may be located above the first inlet 422a introducing liquid into the first collection container 422, and the third inlet 426a introducing liquid into the third collection container 426 may be located above the second inlet 424a.

[0073] The support unit 440 includes a support plate 442 and a drive shaft 444. The upper surface of the support plate 442 can be set to a substantially circular shape, and the diameter of the support plate can be greater than the diameter of the substrate W. A support pin 442a is set at the central portion of the support plate 442 to support the rear of the substrate W, and the support pin 442a is provided with its upper end protruding from the support plate 442 so that the substrate W is spaced apart from the support plate 442 at a certain distance. A chuck pin 442b is set at the edge of the support plate 442. The chuck pin 442b is set to protrude upward from the support plate 442 and support the side of the substrate W so that when the substrate W rotates, the substrate W will not be separated from the support unit 440. The drive shaft 444 driven by the driver 446 is connected to the center of the bottom surface of the substrate W and rotates the support plate 442 relative to its central axis.

[0074] In one example, the liquid supply unit 460 may include a nozzle 462. The nozzle 462 may supply a treatment solution to the substrate W. The treatment solution may be a chemical, a rinse solution, or an organic solvent. The chemical may be a chemical having a strong acid or a strong base property. In addition, the rinse solution may be pure water. In addition, the organic solvent may be isopropyl alcohol (IPA). In addition, the treatment solution supplied by the liquid supply unit 460 may be a developer. For example, the developer supplied by the liquid supply unit 460 may include n-butyl acetate.

[0075] In addition, the liquid supply unit 460 may include a plurality of nozzles 462, each of which may supply a different type of processing solution. For example, one of the nozzles 462 may supply a chemical, another of the nozzles 462 may supply a rinsing solution, and another of the nozzles 462 may supply an organic solvent. Further, the controller 30 may control the liquid supply unit 460 to supply a rinsing solution to the substrate W from one of the nozzles 462, and then supply an organic solvent from another of the nozzles 462. Therefore, the rinsing solution supplied to the substrate W may be replaced with an organic solvent having a low surface tension. In addition, any of the nozzles 462 may supply a developer.

[0076] The lifting unit 480 moves the cup 420 in the up-down direction. The relative height between the cup 420 and the substrate W is changed by the up-down movement of the cup 420. Accordingly, since the collection containers 422, 424, and 426 for collecting the processing solution are changed according to the type of liquid supplied to the substrate W, the liquid can be separated and collected. Different from the description, the cup 420 may be fixedly installed, and the lifting unit 480 may move the supporting unit 440 in the up-down direction.

[0077] Figure 3 To schematically show Figure 1 FIG. 1 is a diagram of an exemplary embodiment of a drying chamber.

[0078] See also Figure 3 According to the exemplary embodiment of the present invention, the drying chamber 500 can remove the processing solution remaining on the substrate W by using the processing fluid SC in a supercritical state. The removed processing solution can be an organic solvent. Further, the processing fluid SC can include carbon dioxide (CO 2 ).

[0079] The drying chamber 500 may include a body 510 , a heating member 520 , a process fluid supply unit 1000 , a support member 540 , a process fluid discharge unit 550 , and an elevating member 560 .

[0080] The body 510 may have an inner space 511 in which the substrate W is processed. The body 510 is disposed in the inner space 511 in which the substrate W is processed. The body 510 may be disposed in the inner space 511 in which the substrate W is dry-processed by the processing fluid SC in a supercritical state.

[0081] The body 510 may include an upper body 512 and a lower body 514. The upper body 512 and the lower body 514 may be combined with each other to form an internal space 511. Either of the upper body 512 and the lower body 514 may be coupled to the lifting member 560 to move in the up-down direction. For example, the lower body 514 may be coupled to the lifting member 560 to move in the up-down direction through the lifting member 560. Therefore, the internal space 511 of the body 510 may be optionally sealed. In the above example, the case where the lower body 514 is coupled to the lifting member 560 to move in the up-down direction has been described as an example, but the present invention is not limited thereto. For example, the upper body 512 may be coupled to the lifting member 560 to move in the up-down direction.

[0082] The heating member 520 may heat the treatment fluid SC supplied to the internal space 511. The heating member 520 may increase the temperature of the internal space 511 of the body 510. By increasing the temperature of the internal space 511 by the heating member 520, the treatment fluid SC supplied to the internal space 511 may be changed to a supercritical state or may be maintained in a supercritical state.

[0083] In addition, the heating member 520 may be embedded in the body 510. For example, the heating member 520 may be embedded in at least one of the upper body 512 and the lower body 514. For example, the heating member 520 may be provided in each of the upper body 512 and the lower body 514. However, the present invention is not limited thereto, and the heating member 520 may be provided at various positions capable of increasing the temperature of the internal space 511. In addition, the heating member 520 may be a heater. However, the present invention is not limited thereto, and the heating member 520 may be variously modified to be a known device capable of increasing the temperature of the internal space 511.

[0084] Figure 4 To schematically show Figure 3 A cross-sectional view of an exemplary embodiment of a process fluid supply unit.

[0085] The treatment fluid supply unit 1000 may supply the treatment fluid SC to the treatment space 511 of the body 510. The treatment fluid supply unit 1000 may include a treatment fluid supply source 1100, an inlet line 1200, a tank 1300, a circulation line 1400, and a supply line 1500.

[0086] The treatment fluid supply source 1100 may store the treatment fluid SC supplied to the internal space 511 of the body 510, or may supply the treatment fluid SC to the internal space 511. The treatment fluid supply source 1100 may supply the treatment fluid SC to the internal space 511 via the inlet line 1200, the tank 1300, the first supply line 1520, and / or the second supply line 1530. The treatment fluid SC stored in the treatment fluid supply source 1100 may be in a liquid state. In one example, the treatment fluid SC may include carbon dioxide (CO 2 ).

[0087] The inlet line 1200 supplies the treatment fluid SC from the treatment fluid supply source 1100 to the tank 1300. The inlet line 1200 connects the treatment fluid supply source 1100 and the tank 1300. In one example, the treatment fluid SC including carbon dioxide in a liquid state is introduced into the tank.

[0088] The tank 1300 may store the treatment fluid SC. The tank 1300 may include an external heater 1310, an internal heater 1320, a temperature sensor 1330, a pressure sensor 1340, and a body 1350. Further, the body 1350 may be connected to a circulation line 1400 and a main supply line 1500 to be described later. The body 1350 provides a storage space S for storing the treatment fluid SC. The treatment fluid SC may be changed to a supercritical state and maintained in a supercritical state in the storage space S.

[0089] The external heater 1310 heats the tank 1300 from the outside of the tank 1300. The external heater 1310 is installed on the outside of the tank 1300. In one example, the external heater 1310 may be formed to surround the outer wall of the tank 1300. In addition, the external heater 1310 may be buried in the body 1350. However, without limitation, the external heater 1310 may be provided at various positions outside the tank 1300, which may increase the temperature of the storage space S. Further, the external heater 1310 may be a heater. However, without limitation, the external heater 1310 may be any known device that may increase the temperature of the storage space S.

[0090] The internal heater 1320 heats the treatment fluid SC stored inside the tank 1300. The internal heater 1320 is installed inside the tank 1300. In one example, the internal heater 1320 may be provided in the form of a rod running in the longitudinal direction of the tank 1300. In addition, the internal heater 1320 may be installed in the center of the tank 1300. However, without limitation, the internal heater 1320 may be provided at various positions that may increase the temperature of the treatment fluid SC. Further, the internal heater 1320 may be a heater. However, without limitation, the internal heater 1320 may be variously modified to any known device capable of increasing the temperature of the treatment fluid SC.

[0091] In one example, the external heater 1310 and the internal heater 1320 may increase the temperature of the storage space S of the tank 1300 so that the process fluid SC supplied to the tank 1300 may be changed to a supercritical state or maintained in a supercritical state.

[0092] The temperature sensor 1330 measures the temperature of the process fluid SC. In one example, the temperature sensor may be mounted on the top of the tank 1300. However, the present invention is not limited thereto, and any location capable of measuring the temperature of the process fluid SC is sufficient. The temperature sensor 1330 transmits the measured temperature of the process fluid SC to the controller 30.

[0093] The pressure sensor 1340 measures the pressure in the tank 1300. In one example, the pressure sensor may be mounted on the top of the tank 1300. However, the present invention is not limited thereto, and any position capable of measuring the pressure of the tank 1300 is sufficient. The pressure sensor 1340 may transmit the measured pressure to the controller 30. The controller 30 may control the temperature of the treatment fluid SC in the tank 1300 based on the pressure value measured by the pressure sensor 1340, as will be described later.

[0094] The circulation line 1400 circulates the treatment fluid SC in the tank 1300 to the outside of the tank 1300. One end and the other end of the circulation line are directly connected to the tank. For example, one end of the circulation line is connected to the bottom wall of the tank, and the other end of the circulation line is connected to the top wall of the tank. A first valve 1410 and a temperature drop member 1420 are installed in the circulation line 1400.

[0095] The first valve 1410 is installed upstream of the temperature drop member 1420, which will be described later. The first valve 1410 may be an on / off valve, such as an on / off valve. Alternatively, the first valve 1410 may be a flow control valve. When the first valve 1410 is opened or closed, the process fluid SC may flow in the circulation line 1400. The first valve 1410 may be controlled by the controller 30. The controller 30 may determine to open or close the first valve 1410 based on the pressure value in the tank 1300 delivered from the pressure sensor 1340.

[0096] The temperature drop member 1420 drops the temperature of the process fluid SC flowing through the circulation line 1400. The temperature drop member 1420 is installed downstream of the first valve 1410. In one example, the temperature drop member 1420 includes a contraction portion 1421 having a gradually decreasing cross-sectional area along the longitudinal direction of the circulation line 1400 and an expansion portion 1422 having a gradually increasing cross-sectional area along the longitudinal direction of the circulation line 1400. The contraction portion 1421 is located upstream of the expansion portion 1422. Further, the contraction portion 1421 and the expansion portion 1422 may be connected to each other.

[0097] The supply line 1500 may include a main supply line 1510, a first supply line 1520, and a second supply line 1530. The main supply line is directly connected to the bottom wall of the tank. A second valve 1511 is installed on the main supply line 1510. The first supply line 1520 is equipped with a first supply valve 1521. Further, the second supply line 1530 is equipped with a second supply valve 1531. The second valve 1511, the first supply valve 1521, and the second supply valve 1531 may be an open / close valve, such as an open / close valve. Alternatively, the second valve 1511, the first supply valve 1521, and the second supply valve 1531 may be a flow control valve. According to the opening and closing of the first supply valve 1521 and the second supply valve 1531, the process fluid SC may optionally flow in the first supply line 1520 or the second supply line 1530.

[0098] The first supply line 1520 is coupled to the upper body 510. The first supply line 1520 is provided to supply the process fluid SC toward the top surface of the substrate W. The process fluid SC supplied from the first supply line 1520 may be supplied into the process space in a direction from the bottom to the top.

[0099] The second supply line 1530 is coupled to the lower body. The second supply line may be provided to supply the processing fluid to the processing space in a direction from the bottom to the top.

[0100] Hereinafter, a method of drying the substrate W in the drying chamber 500 will be described in detail. Figure 61 is a flow chart showing a substrate processing method according to an exemplary embodiment of the present invention. The controller 30 may control the substrate processing device so as to perform the substrate processing method described below. The controller 30 may control the components provided in the processing fluid supply unit 1000 to perform the substrate processing method described herein. For example, the components may be the first supply valve 1521, the second supply valve 1531, the first valve 1410, the second valve 1511, the external heater 1310, the internal heater 1320, etc. The controller 30 may also control each of the first valve 1410, the second valve 1511, the first supply valve 1521, and the second supply valve 1531 based on the temperature and pressure transmitted from the temperature sensor 1330 and the pressure sensor 1340.

[0101] In addition, the controller 30 may include: a process controller, which is composed of a microprocessor (computer) that performs control of the substrate processing device; a user interface, which is composed of a keyboard, on which the operator performs command input operations, etc. in order to manage the substrate processing device; a display, which is used to visualize and display the operating status of the substrate processing device, etc.; and a storage unit, which stores a control program for executing a process performed in the substrate processing device under the control of the process controller, or stores a program for performing a process in each component according to various data and processing conditions (i.e., a processing scheme). In addition, the user interface and the storage unit can be connected to the process control unit. The processing scheme can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a portable disk (such as a CD-ROM or a DVD), or a semiconductor memory (such as a flash memory).

[0102] The controller 30 receives the pressure of the tank 1300 from the pressure sensor 1340. When the pressure value of the delivery exceeds the preset pressure, the controller 30 controls the first valve 1410 to open. When the first valve 1410 is opened, the treatment fluid SC in the tank 1300 is supplied to the circulation line 1400. The treatment fluid SC passes through the temperature drop member 1420 in the circulation line 1400. After passing through the temperature drop member 1420, the treatment fluid in the supercritical state is supplied back to the tank 1300. When the treatment fluid SC in the supercritical state passes through the temperature drop member 1420, the treatment fluid SC in the supercritical state decreases in temperature and changes the state to a gas state. The temperature of the treatment fluid SC in the supercritical state decreases, and the treatment fluid SC in the supercritical state is supplied to the tank again in a gas state with a relatively low temperature. Therefore, according to an exemplary embodiment of the present invention, the temperature of the treatment fluid can be controlled, and the pressure in the tank 1300 can be reduced without discharging the treatment fluid SC, thereby reducing the consumption of the treatment fluid SC.

[0103] The substrate processing method of the present invention may include an introducing operation S10 , a state changing operation S20 , and a supplying operation S40 .

[0104] In the introducing operation S10, the treatment fluid SC in the first state is introduced into the tank 1300 from the treatment fluid supply source 1100 via the inlet line 1200. The treatment fluid SC may have a relatively lower temperature than the treatment fluid SC stored in the tank 1300. In one example, the first state may be a liquid state. Hereinafter, the first state described is a liquid state.

[0105] In the state changing operation S20, the external heater 1310 and the internal heater 1320 heat the treatment fluid SC. The controller 30 can control the external heater 1310 and the internal heater 1320 so that the temperature of the treatment fluid SC is within a preset temperature range. Therefore, the state of the treatment fluid SC in the tank changes to a second state. For example, the second state can be a supercritical state. Hereinafter, the second state described is a supercritical state. Further, the pressure sensor 1340 can measure the pressure in the tank 1300. The controller 30 can receive the pressure of the tank 1300 from the pressure sensor 1340.

[0106] After the state changing operation S20, a circulation operation S30 may be further performed. As the temperature of the treatment fluid in the supercritical state increases, the pressure in the tank 1300 also increases. When the pressure in the tank 1300 exceeds a preset pressure, the circulation operation S30 is performed.

[0107] In the circulation operation S30, the treatment fluid SC stored in the tank 1300 circulates along the circulation line 1400. In the circulation operation S30, the controller 30 controls the first valve 1410 to be opened. Therefore, the treatment fluid SC in the tank 1300 in a supercritical state circulates along the circulation line 1400. During the circulation operation S30, the treatment fluid SC in the supercritical state passes through the temperature drop member 1420. The temperature of the treatment fluid SC in the supercritical state decreases after passing through the temperature drop member 1420. The temperature can be reduced by compressing the treatment fluid SC by the contraction portion 1421 and re-expanding the treatment fluid SC by the expansion portion 1422. When the treatment fluid SC passes through the contraction portion 1421, its temperature decreases according to the Bernoulli principle. When the cross-sectional area of ​​the contraction portion 1421 narrows in the longitudinal direction, the treatment fluid SC flows faster and reduces the pressure to save kinetic energy.

[0108] Then, the treatment fluid SC passes through the expansion portion 1422. The treatment fluid SC compressed in the contraction portion 1421 undergoes adiabatic expansion when passing through the expansion portion 1422. In general, the fluid reduces its temperature during adiabatic expansion. Therefore, the treatment fluid SC reduces its temperature when passing through the expansion portion 1422. Therefore, the treatment fluid in the supercritical state can change its state to a third state. The third state can be a gas state. In the following, the third state described is a gas state. The treatment fluid SC in the gas state is resupplied back to the tank 1300 along the circulation line 1400. After the resupply, the state change operation S20 can be performed again.

[0109] In the supply operation S40, the process fluid SC in a supercritical state is supplied to the internal space 511 of the body 510. The controller 30 receives the temperature of the process fluid in a supercritical state from the temperature sensor 1330. In the case of drying the processed substrate, when the temperature of the process fluid in a supercritical state falls within a preset temperature range, the controller 30 may open the first supply valve 1521 and / or the second supply valve 1531. Therefore, the process fluid in a supercritical state may be supplied to the internal space 511. Subsequently, the introduction operation S10 may be performed again.

[0110] Figure 7 FIG. 1 is a graph illustrating the temperature of a treatment fluid stored in a tank over time according to an exemplary embodiment of the present invention.

[0111] The treatment fluid in a supercritical state is supplied to the internal space 511 (t0 to t1). Then, the treatment fluid SC in a liquid state is introduced into the tank 1300. Since the temperature of the treatment fluid SC is lower than the temperature of the treatment fluid in a supercritical state, the temperature of the treatment fluid decreases (t1 to t2). When the controller 30 heats the treatment fluid SC in a liquid state with the external heater 1310 and the internal heater 1320 to change the state of the treatment fluid SC to a supercritical state, the temperature of the treatment fluid increases (t2 to t3). The temperature of the treatment fluid SC continues to rise. The temperature of the treatment fluid SC can increase to exceed the preset temperature range T1 to T2. As the temperature increases, the pressure in the tank 1300 can also increase. The controller 30 receives the pressure value in the tank 1300 from the pressure sensor 1340. When the pressure value exceeds the preset pressure, the controller 30 controls the first valve 1410 to open. This allows the treatment fluid SC in a supercritical state to circulate along the circulation line 1400. When the treatment fluid SC in the supercritical state passes through the temperature drop member 1420, the temperature of the treatment fluid SC in the supercritical state is reduced, and the treatment fluid SC in the supercritical state is changed to the treatment fluid SC in the gas state. The treatment fluid SC in the gas state is introduced back into the tank 1300. Since the treatment fluid SC in the gas state has a lower temperature than the treatment fluid SC in the supercritical state, the temperature of the treatment fluid SC in the tank is reduced (t3 to t4). However, since the temperature of the treatment fluid SC in the gas state is higher than the treatment fluid SC in the liquid state, the temperature reduction amplitude is smaller than when the treatment fluid SC in the liquid state is introduced. The controller 30 heats the external heater 1310 and the internal heater 1320 to change the state of the treatment fluid SC in the gas state to the supercritical state (t4 to t5). During the heating process, when the pressure value in the tank 1300 exceeds the preset pressure again, the above process is repeated again (after t5). In one example, the above process can be repeated multiple times.

[0112] According to the exemplary embodiment of the present invention, the pressure of the tank 1300 and the temperature of the treatment fluid SC can be effectively controlled without discharging the treatment fluid SC stored in the tank 1300 to the outside. Therefore, the usage of the treatment fluid SC can be reduced. In addition, the temperature of the treatment fluid SC can be controlled within a certain range, thereby ensuring the reproducibility of the drying process.

[0113] The support member 540 may support the substrate W in the inner space 511. The support member 540 may be configured to support an edge region of the substrate W in the inner space 511. For example, the support member 540 may be configured to support a bottom side of an edge region of the substrate W in the inner space 511.

[0114] The treatment fluid discharge unit 550 may discharge the treatment fluid SC from the internal space 511 of the body 510 to the outside. The treatment fluid discharge unit 550 may include a fluid discharge line 551 and a discharge valve 553. One end of the fluid discharge line 551 may be in communication with the internal space 511. At least a portion of the fluid discharge line 551 may be disposed in the lower body 514. The fluid discharge line 551 may be configured such that when the treatment fluid SC is discharged from the internal space 511, the treatment fluid SC flows in a direction from the top to the bottom of the internal space 511.

[0115] In addition, the fluid discharge line 551 can be equipped with a discharge valve 553. The discharge valve 553 can be an on / off valve, such as an open / close valve. The discharge valve 553 can also be a flow regulating valve. The fluid discharge line 551 can be installed and arranged with a variety of materials, such as orifices, pressure sensors, temperature sensors, and pumps.

[0116] In the above example, the present invention has been described based on the case where the temperature reduction member 1420 includes the contraction portion 1421 and the expansion portion 1422 as an example, but the present invention is not limited thereto and may be configured to reduce the temperature of the treatment fluid by the Venturi effect. For example, a connection portion 1423 may be provided to connect the contraction portion 1421 and the expansion portion 1422, such as Figure 8 In addition, an orifice 1424 may be provided to replace the contraction portion 1421 and the expansion portion 1422, as shown in FIG. Fig. 9 As shown, a channel 1425 having a cross-sectional area narrower than that of the circulation line 1400 may be provided. Fig.10 shown.

[0117] In addition, the first supply line 1520, the second supply line 1530, or the pipeline between the points where the first supply line 1520 and the second supply line 1530 described in the above examples are connected to the tank 1300 can be equipped and provided with various materials, such as pressure sensors, temperature sensors, flow control valves, orifices and heaters.

[0118] Furthermore, the above example illustrates the removal of the organic solvent remaining on the substrate W using the treatment fluid SC in a supercritical state. However, the liquid removed using the treatment fluid in a supercritical state may be a developer or other types of treatment solutions instead.

[0119] Further, in the above examples, the main supply line and the circulation line are described as being directly connected to the tank. However, the main supply line may be connected to the circulation line, such as Fig.11 shown.

[0120] Further, in the above examples, the second state is described as a gas state. However, the present invention is not limited thereto, and the process fluid may be a supercritical or subcritical process fluid having a reduced temperature.

[0121] The foregoing detailed description illustrates the present invention. In addition, the above content shows and describes exemplary embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, within the scope of the inventive concept disclosed in this specification, the scope equivalent to the scope of the present invention and / or the scope of the technology or knowledge in the art, the foregoing content can be modified or amended. The foregoing exemplary embodiments describe the best state of the technical spirit of the implementation of the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Therefore, the above detailed description of the present invention is not intended to limit the present invention to the disclosed exemplary embodiments. In addition, the attached claims should be interpreted as also including other exemplary embodiments.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a chamber for providing a processing space for processing a substrate; as well as a treatment fluid supply unit, the treatment fluid supply unit being used to supply treatment fluid to the treatment space; Wherein, the processing fluid supply unit comprises: a tank for storing the treatment fluid; a heating unit for heating the treatment fluid in the tank to change the treatment fluid from a first state to a second state; an inlet line for introducing the treatment fluid in a first state into the tank; a supply line for supplying the treatment fluid in the second state from the tank to the chamber; a circulation line for circulating the treatment fluid in the tank; a first valve installed in the circulation line; and A temperature dropping member is installed in the circulation line to drop a temperature of the process fluid flowing through the circulation line.

2. The device according to claim 1, wherein: The temperature dropping member includes a temperature dropping passage having an area narrower than an area of ​​a passage through which the process fluid flows in the circulation line.

3. The device according to claim 1, wherein: The temperature reducing member includes an orifice.

4. The device according to claim 2, wherein: The temperature drop channel comprises: a contraction portion having a cross-sectional area gradually narrowing in a longitudinal direction of the temperature falling passage in a direction from upstream to downstream; and an expansion portion having a cross-sectional area gradually widening along the longitudinal direction of the channel in a direction from upstream to downstream, and The constriction is located upstream of the expansion.

5. The device according to claim 4, wherein: The temperature drop channel further includes a connecting portion, the connecting portion connecting the contraction portion and the expansion portion, and The connection portion has a constant cross-sectional area along the longitudinal direction of the temperature dropping passage.

6. The device according to claim 1, wherein: The temperature dropping member is configured to change the treatment fluid in the first state to the treatment fluid in a third state.

7. The device according to claim 6, wherein: The first state is a liquid state, The second state is a supercritical state, and The third state is a gas state.

8. The device according to claim 1, wherein: The circulation line is provided in a separated state from the supply line.

9. The device according to claim 1, further comprising: a pressure sensor for measuring the pressure in the tank; as well as Controller, The controller receives a measurement value measured by the pressure sensor and controls the first valve based on the measurement value.

10. The device according to claim 9, wherein: The controller controls the first valve to open when the measured value exceeds a preset pressure.

11. The device according to claim 1, further comprising: a second valve installed in the supply line to open and close the supply line; a temperature sensor for measuring the temperature of the treatment fluid; as well as Controller, The controller controls the second valve to open when the temperature measured by the temperature sensor satisfies a preset range during processing of the substrate.

12. A method for processing a substrate, the method comprising: an introducing operation of introducing a treatment fluid in a first state into the tank; a state changing operation, the state changing operation changing the treatment fluid in the first state to a second state; as well as a supply operation of supplying the processing fluid in the second state into a chamber for processing a substrate, Wherein, after the state changing operation, a circulation operation is performed to circulate the treatment fluid in the second state through a circulation line connected to the tank, so that when the pressure in the tank exceeds a preset pressure, the temperature of the treatment fluid in the second state in the tank is reduced.

13. The method according to claim 12, wherein: In the circulation operation, the area of ​​the channel is changed while the treatment fluid in the second state flows, so that the treatment fluid in the second state is changed into the treatment fluid in the third state by a temperature drop.

14. The method according to claim 12, wherein: In the cycle operation, the treatment fluid in the second state is compressed, and The compressed treatment fluid in the second state is expanded again, thereby reducing the temperature of the treatment fluid in the second state.

15. The method according to claim 13, wherein: The second state is a supercritical state, and The third state is a gas state.

16. The method according to claim 12, wherein: The supply operation includes: measuring a temperature of the processing fluid in the second state while processing the substrate, and When the measured temperature value satisfies a preset temperature range, the processing fluid in the second state is supplied into the chamber.

17. The method according to claim 12, wherein: The process is a process of drying the substrate using the process fluid in the second state.

18. An apparatus for processing a substrate, the apparatus comprising: a chamber for providing a processing space for processing a substrate; as well as a treatment fluid supply unit, the treatment fluid supply unit being used to supply treatment fluid to the treatment space, Wherein, the processing fluid supply unit comprises: a tank for storing the treatment fluid; a pressure sensor for measuring the pressure in the tank; a heating unit for heating the fluid to change the treatment fluid in the tank from a liquid state to a supercritical state, an inlet line for introducing the treatment fluid in the liquid state into the tank; a circulation line provided in a state separated from the supply line and used to circulate the treatment fluid in the tank; a first valve installed in the circulation pipeline to open and close the circulation pipeline; a temperature lowering member installed in the circulation line to lower the temperature of the process fluid flowing through the circulation line; a supply line for supplying the treatment fluid in the supercritical state from the tank to the chamber; and Controller, wherein the temperature reduction member changes the processing fluid in the supercritical state into a gaseous state, and The controller receives the pressure value measured from the pressure sensor and opens the first valve when the pressure value exceeds a preset pressure.

19. The device according to claim 18, wherein: The temperature reduction component comprises: A contraction portion, the contraction portion gradually becomes smaller in a direction from the upstream to the downstream of the circulation pipeline; an expansion portion, the expansion portion gradually becoming larger in a direction from the upstream to the downstream of the circulation pipeline; a connecting portion connecting the contraction portion and the expansion portion, and The constriction is located upstream of the expansion.

20. The device according to claim 18, wherein The temperature reducing member includes an orifice.

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