Crystal grain filling method

Abstract

The invention discloses a crystal grain filling method which is suitable for filling a plurality of crystal grain vacancies of a first crystal grain array of a first carrier plate, and the crystal grain filling method comprises the steps: placing a second carrier plate with a second crystal grain array above the first carrier plate, enabling a plurality of second columns of the second crystal grain array to be aligned with a plurality of first columns of the first crystal grain array, wherein the second crystal grain array comprises a plurality of crystal grains; and enabling the first carrier plate and the second carrier plate to move relatively in the column direction, and during the relative movement process, when any one of the plurality of crystal grains is overlapped with any one of the plurality of crystal grain vacancies, enabling the crystal grains overlapped with the crystal grain vacancies to fall into the crystal grain vacancies from the second carrier plate. According to the crystal grain filling method, the crystal grain utilization rate and the crystal grain filling efficiency during crystal grain filling can be improved.

Description

Technical Field

[0001] The invention relates to a filling method, in particular to a grain filling method. Background Art

[0002] When there are defective dies on the substrate carrying the die, the defective dies need to be removed before the die filling process is performed to remove the vacancies on the substrate. The conventional die filling method is to align the filling carrier with the substrate up and down, and then transfer the die on the filling carrier corresponding to the vacant dies to the substrate.

[0003] However, after the filling process, although there are still many grains on the filling carrier, there are grain vacancies between these grains. Therefore, when the next grain filling process is performed, if the grain vacancies of the substrate to be filled correspond to the grain vacancies of the filling carrier, they cannot be filled. The substrate and the filling carrier need to be moved relative to each other and then realigned so that the grain vacancies of the substrate are aligned with the grains on the filling carrier. This will increase the time cost of the grain filling process. In addition, if you want to reduce the probability that the grain vacancies of the substrate correspond to the grain vacancies of the filling carrier, you need to frequently replace new filling carriers, thereby limiting the efficiency of using the grains of the filling carrier. Summary of the invention

[0004] The invention provides a grain filling method, which can improve the grain utilization rate and grain filling efficiency during grain filling.

[0005] The grain filling method provided by the present invention is suitable for filling multiple grain vacancies of a first grain array of a first carrier. The grain filling method includes: placing a second carrier having a second grain array above the first carrier, aligning multiple second columns of the second grain array with multiple first columns of the first grain array, wherein the second grain array includes multiple grains; and moving the first carrier and the second carrier relative to each other in the column direction. During the relative movement, when any multiple grains overlap with any multiple grain vacancies, the grains overlapping the grain vacancies are dropped from the second carrier to the grain vacancies.

[0006] In one embodiment of the present invention, the step of moving the first carrier and the second carrier relative to each other in the row direction includes moving the first carrier and the second carrier.

[0007] In one embodiment of the present invention, the step of moving the first carrier and the second carrier relative to each other in the row direction includes moving one of the first carrier and the second carrier.

[0008] In one embodiment of the present invention, the step of causing the die overlapping the die vacant position to drop from the second carrier to the die vacant position includes providing a processing beam to irradiate the die overlapping the die vacant position.

[0009] In one embodiment of the present invention, the step of providing a processing beam to irradiate the grains overlapping the grain vacancies includes: providing a Gaussian beam by a laser light source, adjusting the energy distribution of the Gaussian beam into a processing beam with a flat-top distribution through a beam shaping element; and irradiating the processing beam to the grains overlapping the grain vacancies by a scanning galvanometer module.

[0010] In one embodiment of the present invention, the step of providing a processing light beam to irradiate the die overlapping the die vacancy further includes: irradiating the processing light beam to the scanning galvanometer module by means of a light guiding element.

[0011] In one embodiment of the present invention, the laser light source is a diode-pumped solid-state laser (DPSS Laser) light source.

[0012] The die filling method of the present invention performs die filling during the relative movement of the first carrier and the second carrier, so that each row of die on the second carrier for filling can be used in sequence, thereby improving the die utilization rate and die filling efficiency during die filling.

[0013] In order to make the above and other purposes, features and advantages of the present invention more clearly understood, embodiments are given below with reference to the accompanying drawings for detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. 4 is a flow chart of a die filling method according to an embodiment of the present invention.

[0015] Figure 2 It is a top view schematically showing that the first carrier and the second carrier are aligned in the row direction according to an embodiment of the present invention.

[0016] FIG. 3A to FIG. 3D It is a schematic diagram of a partial process of relative movement between the first carrier plate and the second carrier plate in step S2.

[0017] Figure 4 It corresponds to Figure 3A Processing diagram.

[0018] Figure 5 FIG. 4 is a top view schematically showing that the first carrier and the second carrier are aligned in the row direction in another embodiment of the present invention.

[0019] FIG. 6A to FIG. 6B FIG. 1 is a schematic diagram of a partial process of relative movement between the first carrier plate and the second carrier plate in step S2 in another embodiment. DETAILED DESCRIPTION

[0020] The above and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to one of the drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and not to limit the present invention.

[0021] Figure 1 FIG. 4 is a flow chart of a die filling method according to an embodiment of the present invention. Figure 2 is a top view schematic diagram of an embodiment of the present invention in which the first carrier and the second carrier are aligned in the column direction. Figure 1 and Figure 2 The die filling method of this embodiment is suitable for filling a plurality of die vacancies P of a first die array 111 of a first carrier 110, and the die filling method comprises the following steps. Step S1: placing a second carrier 120 having a second die array 121 above a first carrier 110 having a first die array 111, and aligning a plurality of second columns 122 of the second die array 121 with a plurality of first columns 112 of the first die array 111, wherein the second die array 121 comprises a plurality of die G. In one embodiment, when aligning a plurality of second columns 122 of the second die array 121 with a plurality of first columns 112 of the first die array 111, the plurality of second columns 122 of the second die array 121 and the plurality of first columns 112 of the first die array 111 are, for example, non-overlapping or partially overlapping.

[0022] Specifically, the first die array 111 of the first carrier 110 of the present embodiment includes, for example, the die G1 arranged in 28 rows and 13 columns, wherein the first die array 111 includes, for example, 32 die vacancies P, and these die vacancies P are located between the die G1. The second die array 121 of the second carrier 120 of the present embodiment includes, for example, the die G arranged in 10 rows and 13 columns. It should be noted that although Figure 2 The die G of the second carrier 120 in the figure is drawn with a solid line, but the die G is located on the side of the second carrier 120 facing the first carrier 110. In addition, the number of the first row 112 of the present embodiment is, for example, the same as the number of the second row 122, for example, both are 13, so that the first row 112 of the first die array 111 can correspond one-to-one to the second row 122 of the second die array 121. However, the present invention is not limited to this. In another embodiment, the number of the first row 112 can be greater than or less than the number of the second row 122. In the embodiment where the number of the first row 112 is greater than the number of the second row 122, the die filling method of the present embodiment can be repeated to complete the filling of the die vacancies P of the entire first carrier 110.

[0023] Next, please refer to step S2: the first carrier 110 and the second carrier 120 are relatively moved in the column direction X. During the relative movement, when any grain G overlaps with any grain vacancy P, the grain G overlapping the grain vacancy P is dropped from the second carrier 120 to the grain vacancy P. The step of dropping the grain G overlapping the grain vacancy P from the second carrier 120 to the grain vacancy P includes, for example, providing a processing light beam L1 to irradiate the grain G overlapping the grain vacancy P. FIG. 3A to FIG. 3D is a schematic diagram of a partial process of relative movement between the first carrier plate and the second carrier plate in step S2, Figure 4 It corresponds to Figure 3A Please refer to the processing diagram first. Figure 3A and Figure 4 In this embodiment, the number of rows of the first carrier 110 is, for example, the 1st row to the 28th row arranged in sequence from left to right, and the number of rows of the second carrier 120 is, for example, the 1st row to the 10th row arranged in sequence from right to left. When the first carrier 110 and the second carrier 120 move relative to each other along the column direction X so that the grains G in the 1st row of the second carrier 120 overlap with the grain vacancies P on the 1st row of the first carrier 110, since the 13 first columns 112 of the first carrier 110 correspond to the 13 second columns 122 of the second carrier 120, for example, two grain vacancies P on the 1st row of the first carrier 110 overlap with two grains G on the 1st row of the second carrier 120. At this time, the processing light beam L1 irradiates the two grains G overlapping with the two grain vacancies P, so that the two grains G fall from the second carrier 120 to the two grain vacancies P on the first carrier 110. In this embodiment, the processing light beam L1 can be designed to irradiate the two above-mentioned grains G simultaneously or one by one. In addition, during the irradiation, the first carrier 110 and the second carrier 120 can be designed to temporarily stop moving or to continue moving according to the needs. On the other hand, the above-mentioned determination of whether the grain vacancy P overlaps with the grain G is, for example, by taking images of the first carrier 110 and the second carrier 120 by an image detection element (not shown in the figure), and then irradiating the grain G overlapping with the grain vacancy P with the processing light beam L1 according to the above-mentioned image determination.

[0024] Please refer to Figure 3B and Figure 4 After the two grain vacancies P in the first row of the first carrier 110 are filled, when the first carrier 110 and the second carrier 120 are relatively moved along the column direction X until the two grain vacancies P in the second row of the first carrier 110 overlap with the two grains G in the first row of the second carrier 120, the processing light beam L1 irradiates the two grains G overlapping with the grain vacancies P, so that the two grains G fall from the second carrier 120 onto the two grain vacancies P.

[0025] According to the aforementioned die filling method, the die vacancies P of the first carrier 110 are filled in sequence. Figure 3A and Figure 3BThe chip vacancies P in the same row of the first carrier 110 overlap with the chips G in the same row of the second carrier 120 to fill them, but it is also possible to fill the chip vacancies P in different rows overlap with the chips G in different rows of the second carrier 120 at the same time. Figure 3C and Figure 4 When the first carrier 110 and the second carrier 120 move relatively along the column direction X to Figure 3C In the position shown, the 4 grain vacancies P in the 19th and 21st rows of the first carrier 110 overlap with the 4 grains G in the 2nd and 4th rows of the second carrier 120 respectively. Therefore, the processing light beam L1 can be used to irradiate the 4 grains corresponding to the grain vacancies P, so that the 4 grains G fall from the second carrier 120 to the 4 grain vacancies P.

[0026] When the first carrier 110 and the second carrier 120 move relatively along the column direction X to Figure 3D When the position shown is shown, for example, all the die vacancies P of the first carrier 110 are completely filled, and the die G of each second row 122 of the second carrier 120 is reduced according to the number of the corresponding die vacancies P of each first row 112 of the first carrier 110. In this way, there will be no die vacancies between the remaining die G on the second carrier 120, so when the second carrier 120 is applied to other die filling processes, the filling efficiency will not be affected by the die vacancies. Compared with the conventional technology, the die filling method of this embodiment can increase the use efficiency of the die G of the second carrier 120.

[0027] In this embodiment, the step of moving the first carrier 110 and the second carrier 120 relative to each other in the column direction X is, for example, moving both the first carrier 110 and the second carrier 120, but the invention is not limited thereto. In other embodiments, one of the first carrier 110 and the second carrier 120 may be moved.

[0028] Specifically, the step of providing a processing beam L1 to irradiate the grain G overlapping the grain vacancy P includes, for example, providing a Gaussian beam L2 by means of a laser light source 130, adjusting the energy distribution of the Gaussian beam L2 into a processing beam L1 with a flat-top distribution by the beam shaping element 140, and then irradiating the processing beam L1 to the grain G overlapping the grain vacancy P by means of a scanning galvanometer module 160. The scanning galvanometer module 160, for example, swings two galvanometers 161 and 162 with different swing axes within a predetermined angle range, so that the processing beam L1 is irradiated at different positions within a preset working range. In other words, the position where the grain G on the second carrier 120 overlaps the grain vacancy P on the first carrier 110 is within the working range of the scanning galvanometer module 160. The scanning galvanometer module 160, for example, further includes a projection lens 163, which is suitable for irradiating the processing beam L1 to the grain G. In addition, the laser light source 130 is, for example, a diode-pumped solid-state laser (DPSS Laser) light source, but the present invention is not limited thereto. A light guiding element 150 may be disposed between the beam shaping element 140 and the scanning galvanometer module 160. The beam shaping element 140 is used to adjust the energy distribution of the Gaussian beam L2 into a processing beam L1 with a flat-top distribution, which helps to separate the die G from the second carrier 120. The light guiding element 150 guides the processing beam L1 to the scanning galvanometer module 160. Figure 4 The light guiding element 150 is, for example, a reflective element, and the number is, for example, 2, but the present invention does not limit the type and number of the light guiding element 150. A light mask 170 is included between the beam shaping element 140 and the light guiding element 150, for example, for adjusting the shape of the light spot formed when the processing light beam L1 is irradiated on the grain G, wherein the light mask 170 can be a movable light mask and has multiple patterns (not shown), and different patterns can be selected according to the use requirements.

[0029] In the present embodiment, the second carrier 120 may be a wafer substrate, a relay substrate or other carrier that carries the grain G. The first carrier 110 may be a relay substrate, a temporary substrate (Temporary), a drive substrate or other carrier that carries the grain G1. Each of the grains G1 and G carried by the first carrier 110 and the second carrier 120 is, for example, a micro grain, and its length, width, and thickness are, for example, less than 100 μm, and may even be less than 50 μm, for example, less than 10 μm, but not limited thereto. The grains G1 and G may also be grains of larger size, for example, with a length, width, and thickness of approximately between 100-1000 μm. In addition, the above-mentioned micro grains may be micro light emitting diodes (Micro LEDs), but the present invention is not limited thereto.

[0030] The present invention adopts a die filling method, so the die utilization rate and the die filling efficiency during the die filling can be improved.

[0031] Although the second carrier 120 used for the die filling process in this embodiment may have no die vacancies (eg Figure 2 ), or for example, a second carrier 120 having a die vacancy after a die filling process (such as Figure 3D shown), where Figure 3D The die vacancies P of the second carrier 120 are arranged in sequence. Both of the above-mentioned second carriers 120 can be applied to other die filling processes, but the present invention is not limited thereto. In another embodiment, a second carrier with randomly distributed die vacancies P can also be used in a die filling process.

[0032] Figure 5 This is a top view schematic diagram of another embodiment of the present invention in which the first carrier and the second carrier are aligned in the column direction. Figure 5 The die filling method of this embodiment is similar to that of the previous embodiment. The main difference is that the second carrier 120a used for the die filling process of this embodiment has, for example, randomly distributed die vacancies P located between the die G, while the second carrier 120 (e.g. Figures 3A-3D ) For example, it has no grain vacancies P or has grain vacancies P arranged in sequence. FIG. 6A to FIG. 6B This is a schematic diagram of a partial process of relative movement of the first carrier and the second carrier in another embodiment of step S2. Fig. 6A When the first carrier 110 and the second carrier 120a of the present embodiment complete step S1 and proceed to step S2, since the grain vacancies P on the second carrier 120a are randomly distributed, for example, the grain vacancies P on the second carrier 120a may overlap with the grain vacancies P on the first carrier 110 (e.g. Fig. 6A The position indicated by the arrow P), wherein the position of the die vacancy P of the second carrier 120a can be detected by, for example, an image captured by the aforementioned image detection element (not shown).

[0033] Specifically, two grain vacancies P on the first row of the first carrier 110 overlap, for example, one grain G and one grain vacancy P on the first row of the second carrier 120a, respectively. Fig. 6A For example, only one die G in the first row of the second carrier 120a falls into the die vacancy P of the first carrier 110. Figure 6B , wait for the first carrier 110 and the second carrier 120a to be aligned in the row direction X (eg Figure 4 shown) relative to Figure 6BWhen the second row of the second carrier 120a overlaps the first row of the grain vacancies P of the first carrier 110, the processing light beam L1, for example, irradiates the grains G overlapping the grain vacancies P, so that the grains G overlapping the grain vacancies P fall from the second carrier 120a into the grain vacancies P. Therefore, the second carrier 120a with randomly distributed grain vacancies P can still be used for the grain filling process. According to the aforementioned grain filling method, the second carrier 120a can be used to sequentially fill the grain vacancies P of the first carrier 110.

[0034] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with this profession can make some changes or modifications to equivalent embodiments of equivalent changes by using the methods and technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A grain filling method, characterized in that: A method for filling a plurality of die vacancies of a first die array of a first carrier board includes: placing a second carrier having a second die array over the first carrier such that a plurality of second rows of the second die array are aligned with a plurality of first rows of the first die array, wherein the second die array includes a plurality of dies; and The first carrier plate and the second carrier plate are relatively moved in a row direction. During the relative movement, when any of the crystal grains overlaps with any of the crystal grain vacancies, the crystal grains overlapping the crystal grain vacancies are dropped from the second carrier plate to the crystal grain vacancies.

2. The die filling method according to claim 1, characterized in that: The step of moving the first carrier plate and the second carrier plate relative to each other in the row direction includes moving the first carrier plate and the second carrier plate.

3. The die filling method according to claim 1, characterized in that: The step of moving the first carrier plate and the second carrier plate relative to each other in the row direction includes moving one of the first carrier plate and the second carrier plate.

4. The die filling method according to claim 1, wherein: The step of causing the die overlapping the die vacancy to drop from the second carrier to the die vacancy includes providing a processing light beam to irradiate the die overlapping the die vacancy.

5. The die filling method according to claim 4, characterized in that: The step of providing the processing light beam to illuminate the die overlapping the die vacancy includes: A laser light source provides a Gaussian beam, and a beam shaping element adjusts the energy distribution of the Gaussian beam into the processing beam with a flat-top distribution; and The processing light beam is irradiated to the die overlapping the die vacancy by a scanning galvanometer module.

6. The die filling method according to claim 5, characterized in that: The step of providing the processing beam to illuminate the die overlapping the die vacancy further includes: The processing light beam is irradiated to the scanning galvanometer module by a light guiding element.

7. The die filling method according to claim 5, characterized in that: The laser light source is a semiconductor-pumped solid-state laser light source.

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