High-reliability sensor

Abstract

The invention relates to a high-reliability sensor. An electronic device (100) includes a first semiconductor die and a second semiconductor die (102, 110), the first semiconductor die (102) having: a side extending in a first plane of orthogonal first and second directions (X, Y); a sensor circuit (103) along the side; and a conductive terminal (117) extending outwardly from the side along an orthogonal third direction (Z), the second semiconductor die (110) bonded to the first semiconductor die (102) and having: a bottom side; a lateral side; and an insulating layer (112), the bottom side being spaced apart from and facing the side of the first semiconductor die (102) to form a protected chamber (109) for the sensor circuit (103), the lateral side of the second semiconductor die (110) being spaced apart from the conductive terminal (117) along the first direction (X), the insulating layer (112) extends along the lateral side of the second semiconductor die (110), and the insulating layer (112) is spaced apart from and faces the conductive terminals (117) along the first direction (X).

Description

Technical Field

[0001] The present application relates to a high reliability sensor. Background Art

[0002] Sensors are becoming an important part of many modern products and systems, such as smartphones, radars and other sensors for automotive applications, pressure, flow, temperature and / or humidity sensors, resonators and filters for industrial or other applications, sensors for medical systems, and the like. Sensor applications may involve acoustic wave sensors and filters, such as bulk acoustic wave (BAW) and surface acoustic wave (SAW) devices. Modern applications may require a minimum package size and a low profile electronic device package containing sensor circuitry. Flip chip devices such as flip chip chip size packages (FCCSP) can provide a compact form factor that can contain sensor circuitry. These and other topologies often include conductive terminals extending from the sensor die to carry signals or power. A protective cover die can be used to provide a protected cavity or chamber near the sensor circuitry of the sensor die, for example to isolate the sensor circuit from mechanical stresses caused by coefficient of thermal expansion (CTE) mismatches in the packaging structure in order to improve sensor performance. As device packages become smaller and smaller, the spacing between the conductive terminals and the semiconductor material of the protective cover die decreases and causes short circuits or other device degradation or failure. One solution is to include through silicon via (TSV) structures in the protective cover die with suitable insulation along the sidewalls of the vias, but this approach compromises efforts to reduce package height and increases manufacturing cost and complexity. Summary of the invention

[0003] In one aspect, an electronic device includes a first semiconductor die and a second semiconductor die, wherein the first semiconductor die has a sensor circuit along a side of the first semiconductor die and a conductive terminal extending outward from the side of the first semiconductor die, and the second semiconductor die is bonded to the first semiconductor die. The second semiconductor die has a bottom side, an extended lateral side, and an insulating layer, wherein the bottom side is spaced apart from and faces the side of the first semiconductor die to form a protected cavity for the sensor circuit, the lateral side of the second semiconductor die is spaced apart from the conductive terminal, the insulating layer extends along the lateral side of the second semiconductor die, and the insulating layer is spaced apart from and faces the conductive terminal.

[0004] In another aspect, a system includes a printed circuit board and an electronic device attached to the printed circuit board, wherein the electronic device includes: a first semiconductor die having a sensor circuit along the side of the first semiconductor die and a conductive terminal extending outward from the side of the first semiconductor die, and a substrate connected to the conductive terminal and connected to the printed circuit board; and a second semiconductor die. The second semiconductor die is bonded to the first semiconductor die and has a bottom side, a lateral side, and an insulating layer, wherein the bottom side is spaced apart from and faces the side of the first semiconductor die to form a protected chamber for the sensor circuit, the lateral side of the second semiconductor die is spaced apart from the conductive terminal, the insulating layer extends along the lateral side of the second semiconductor die, and the insulating layer is spaced apart from and faces the conductive terminal.

[0005] In another aspect, a method for manufacturing an electronic device includes: forming a groove in a semiconductor wafer; forming an insulating layer on the sidewalls of the groove; bonding the semiconductor wafer to another semiconductor wafer, wherein the insulating layer of the sidewalls of the groove is laterally spaced apart from a conductive terminal of the other semiconductor wafer; grinding the back side of the semiconductor wafer; etching the back side of the semiconductor wafer; and singulating the semiconductor wafer and the other semiconductor wafer to separate the electronic device from the semiconductor wafer and the other semiconductor wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 is a cross-sectional side elevation view of a flip chip chip scale package electronic device wherein an insulating layer on a sidewall of a cap semiconductor die is spaced apart from and faces conductive terminals of another semiconductor die.

[0007] Figure 1A yes Figure 1 A perspective view of an electronic device.

[0008] Figure 2 is included Figure 1 and 1A A side view of a system of electronic devices.

[0009] Figure 3 is included Figure 1 and 1A A side view of another system of electronic devices.

[0010] Figure 4 is a flow chart of a method of manufacturing an electronic device.

[0011] Figures 5 to 15 It is based on experience Figure 4 An example embodiment of a method of manufacturing a process Figure 1 and1A A partial cross-sectional side elevation view of an electronic device. DETAILED DESCRIPTION

[0012] In the drawings, the same reference numerals refer to the same elements throughout the text, and various features are not necessarily drawn to scale. And the term "coupling" includes indirect or direct electrical or mechanical connections or combinations thereof. For example, if the first device is coupled to the second device or is coupled with the second device, the connection can be by direct electrical connection or by indirect electrical connection via one or more intervening devices and connections. Hereinafter, one or more operating characteristics of various circuits, systems and / or components are described in the context of function, and these functions are generated by the configuration and / or interconnection of various structures when the circuit system is powered on and operated in some cases. Unless otherwise stated, the "about", "approximately" or "substantially" in front of the value means + / -10% of the stated value. Hereinafter, one or more operating characteristics of various circuits, systems and / or components are described in the context of function, and these functions are generated by the configuration and / or interconnection of various structures when the circuit system is powered on and operated in some cases. For the convenience of description in conjunction with particular figures, one or more structures, features, aspects, components, etc. may be referred to as first, second, third, etc. in this document, such as first and second terminals, first, second and third wells, etc., wherein these descriptions should not be construed as limitations on the claims.

[0013] Figure 1 and 1A An electronic device 100 is shown in a flip chip chip scale package format with an insulating layer on the sidewalls of a cover semiconductor die that is spaced apart from and faces the conductive terminals of another semiconductor die to mitigate or avoid short circuits and other potential causes of device degradation in a small, low profile package without the cost and complexity associated with TSV solutions. The electronic device 100 is shown in an example position in a three-dimensional space having a first direction X, a perpendicular (orthogonal) second direction Y ( Figure 1A ) and a third direction Z that is perpendicular (orthogonal) to the corresponding first direction X and second direction Y. Structures or features along any two of these directions are orthogonal to each other.

[0014] The electronic device 100 includes a first semiconductor die 102 having a sensor circuit 103 along a top side of the first semiconductor die 102. The top side of the first semiconductor die 102 extends in a first XY plane in a first direction and a second direction in the orientation shown. Any suitable sensor circuit 103 may be provided in the first semiconductor die 102, such as a pressure, temperature, flow, radar sensor, and may include filters, oscillators, or other circuitry (not shown).

[0015] The sensor circuit 103 in one example is configured to sense a condition or signal present in the environment near the top side of the first semiconductor die 102. The illustrated example includes a protective overcoat or passivation layer 104 over a portion of the top side of the first semiconductor die 102. The protective overcoat 104 in one example is or includes one or more of silicon nitride and silicon oxynitride, and other suitable materials may be used in different embodiments. In one example, a patterned polyimide layer 106 is provided over a portion of the protective overcoat 104. In one example, a molded encapsulation structure 108 is formed over the top side of the protective overcoat 104 and the polyimide layer 106, and encloses other structures of the electronic device, such as Figure 1 In another example, the molded package structure 108 (eg, as shown below) may be omitted. Figure 2 and 3 ).

[0016] The electronic device 100 includes a second semiconductor die 110, such as a silicon die, bonded to the first semiconductor die 102. The second semiconductor die 110 has a bottom side extending in a second XY plane in respective first and second directions X and Y. The second semiconductor die 110 has a bottom side that is spaced apart from and faces a top side of the first semiconductor die 102 to form a protected chamber 109 for the sensor circuit 103, for example, to mitigate CTE mismatch stress effects on the operation of the sensor circuit 103. The second semiconductor die 102 also has lateral sides including Figure 1 The lateral side 111 is shown in the side view of FIG. The lateral side 111 extends in the respective YZ planes of the second direction Y and the third direction Z.

[0017] In addition, the second semiconductor die 110 includes an insulating layer 112 extending along a lateral side 111 of the second semiconductor die 110. In the example shown, the insulating layer 112 also extends along a bottom side of the second semiconductor die 110, as shown in FIG. Figure 1 As shown, this is not a requirement for all possible embodiments. In the example shown, the insulating layer 112 along the bottom side of the second semiconductor die 110 has a thickness 113. In one example, the insulating layer 112 is or includes one of silicon dioxide, silicon nitride, and silicon oxynitride. Other suitable insulating layers 112 can be used in different examples to provide electrical insulation for the second semiconductor die 110.

[0018] like Figure 1 and 1AAs further shown in the example electronic device 100, the example electronic device 100 includes a bonding material 114 extending along a third direction Z between a portion of the bottom side of the second semiconductor die 110 and the top side of the first semiconductor die 102. In one example, the bonding material 114 is or includes an epoxy or other suitable adhesive material that bonds the respective first semiconductor die 102 and the second semiconductor die 110 to each other. In addition, in one example, the bonding material 114 surrounds the area around the exposed surface of the sensor circuit 103 and forms the sidewalls of the protected chamber 109. In one example, the protected chamber 109 is sealed by the bonding material 114, although this is not a strict requirement for all possible embodiments. In another example, the bonding material 114 includes a gap or other opening that facilitates the sensing of one or more environmental conditions outside the chamber 109 by the sensor circuit 103 (e.g., humidity, pressure, temperature, etc.).

[0019] like Figure 1 As shown, the insulating layer 112 along the lateral side 111 of the second semiconductor die 110 has a thickness 115. In one example, the thickness 113 and 115 of the insulating layer 112 along the respective bottom and lateral sides 111 are approximately equal, but this is not a requirement for all possible embodiments. The thickness 115 and material of the insulating layer 112 can be tailored to provide a desired amount of electrical isolation between the second semiconductor die 110 and adjacent structures of the electronic device 100.

[0020] The electronic device 100 includes a conductive metal terminal 117 extending outwardly from the top side of the first semiconductor die 102 along a third direction Z to provide electrical connection for the circuit system of the first semiconductor die 102 (e.g., the sensor circuit 103) and a host system or circuit, or to another structure to which the conductive terminal 117 is connected (e.g., as described below). Figure 2 and 3 In one example, the conductive terminal 117 is or includes copper or other suitable conductive metal, such as a copper pillar or bump formed during the manufacture of the first semiconductor die 102. In the example shown, the conductive terminal 117 is formed above a corresponding under-bump metal (UBM) structure 116, which is formed along a corresponding portion of the top side of the first semiconductor die 102. In addition, in the example shown, the top end of the conductive terminal 117 is covered with solder 119 to facilitate solder connection of the electronic device to a host printed circuit board or to a substrate (e.g., the following Figure 2 and 3 ).

[0021] like Figure 1A As shown, the conductive terminal 117 in the example shown is generally cylindrical, but this is not a requirement for all possible embodiments. The conductive terminal 117 has an associated side wall 118 ( Figure 1 ), the portion of the sidewall faces laterally inward toward the corresponding lateral side 111 of the second semiconductor die 110. The lateral side 111 of the second semiconductor die 110 is Figure 1 and 1A The insulating layer 112 along the lateral side 111 is spaced apart from the sidewall 118 of the corresponding conductive terminal 117 at a spacing distance 120 along the first direction X, and faces the sidewall. The lateral insulating layer thickness 115 and material of the insulating layer 112 and the spacing distance 120 can be designed to provide sufficient electrical isolation between the second semiconductor die 110 and the conductive terminal 117 to mitigate or avoid short circuits and other undesirable electrical performance degradation of the electronic device and its sensor circuit 103. In the illustrated embodiment, the optional molded packaging structure 108 encloses a portion of the first semiconductor die 102, the second semiconductor die 110, and the conductive terminal 117, and can provide additional electrical isolation benefits in the host system. In other examples, the device includes a substrate and a molded packaging structure that partially encloses the substrate and other structures (e.g., the molded packaging structure described below). Figure 3 ).

[0022] Insulating layer 112 advantageously provides electrical isolation and insulation benefits while allowing for close spacing (e.g., Figure 1 120) to help reduce the overall package size of the electronic device 100. In addition, the formation of the insulating layer 112 along the lateral sides 111 of the second semiconductor die 110 provides significant process cost and complexity advantages compared to other insulation solutions such as through silicon via (TSV) methods. In addition, the illustrated solution using the insulating layer 112 on the second semiconductor die 110 allows for significantly lower device heights compared to TSV solutions, and allows the use of economical copper pillars or bump terminals formed during the manufacture of the first semiconductor die 102 using conventional die bumping processes and equipment.

[0023] Figure 2 A partial side view of a system 200 having a printed circuit board 201 is shown. The system 200 includes the Figure 1 and 1A. In this example, the electronic device 100 includes a first semiconductor die and a second semiconductor die as described above, and a substrate 202 connected to the conductive terminals 117 of the first semiconductor die. In one example, the substrate 202 is a single-level or multi-level packaging substrate having patterned conductive features (e.g., traces, pads, vias, etc., not shown) that provide signal and / or power routing through conductive connections for the conductive terminals 117 of the first semiconductor die, and one or more levels or layers of dielectric or other electrically insulating materials between the patterned conductive features. In addition, in the illustrated embodiment, the first semiconductor die 102 is flip-chip attached to the substrate 202 via the conductive terminals 117. The electronic device 100 also includes solder balls 219 connected to the substrate 202, which are soldered to the printed circuit board 201 in the illustrated system 200. Different electrical connections may be made between the substrate 202 and the printed circuit board 201 and other embodiments, for example, by flip-chip attachment of copper pillars or bumps (not shown) along the bottom side of the substrate 202, or other suitable structures and systems that electrically and mechanically connect the substrate 202 to the conductive terminals 117 and the printed circuit board 201.

[0024] Figure 3 Shows that it contains Figure 1 and 1A 100 is a side view of another system 300 of an electronic device. In this example, the electronic device 100 includes a first semiconductor die and a second semiconductor die as described above, and a substrate 302 connected to the conductive terminal 117 of the first semiconductor die. In one example, the substrate 302 is a single-level or multi-level packaging substrate having patterned conductive features (e.g., traces, pads, through holes, etc., not shown) that provide signal and / or power routing through conductive connections for the conductive terminals 117 of the first semiconductor die, and one or more levels or layers of dielectric or other electrically insulating materials between the patterned conductive features. In addition, in the illustrated embodiment, the first semiconductor die 102 is flip-chip attached to the substrate 302 via the conductive terminals 117. The electronic device 100 also includes solder balls 319 (e.g., or other suitable conductive terminals or structures) connected to the substrate 302, which are soldered to the printed circuit board 301 in the illustrated system 300. Additionally, in this example, the electronic device 100 also includes a third semiconductor die 322 connected to the substrate 302 , such as by flip-chip bonding.

[0025] This embodiment shows the use of the above combined Figure 1 and 1AThe described first semiconductor die and second semiconductor die in combination with substrate 302 provide a further modular adaptation of electronic device design possibilities, wherein substrate 302 may house one or more additional electronic components (e.g., passive components such as resistors, capacitors, etc.) and / or additional semiconductor dies (not shown). In one embodiment, the electronic device further includes a packaging structure 320, such as a molded plastic structure that encloses the first semiconductor die 102, the second semiconductor die 110, all or a portion of the substrate 302, and the conductive terminals 117. In another embodiment, the packaging structure 320 does not extend downward to the printed circuit board 301. In yet another embodiment, the packaging structure 320 may be omitted. In yet another limitation, the electronic device 100 may include the above-described packaging structure 320 in combination with the printed circuit board 301. Figure 1 and 1A The package structure 108 is depicted in combination with the substrate 302 and the third semiconductor die 322 .

[0026] View now Figures 4 to 15 , Figure 4 A method 400 of manufacturing an electronic device is shown, and Figures 5 to 15 An electronic device 100 is shown undergoing a manufacturing process according to a method 400. The illustrated method 400 includes individual wafer processing of a first wafer and a second wafer having corresponding unit regions or areas associated with individual instances of respective first semiconductor dies 102 and second semiconductor dies 110 as described above, and wafer bonding to bond the individually processed wafers together in manufacturing a plurality of individual electronic devices 100. This example implementation facilitates reducing manufacturing costs and processing time by performing simultaneous manufacturing of multiple electronic devices through extensive processing performed at the wafer level.

[0027] Method 400 begins with Figure 4 At 402 , multiple instances of sensor circuit 103 are formed on and / or in a first semiconductor wafer. Figure 5 A simplified example is shown in which various semiconductor manufacturing processes and steps are depicted as a circuit manufacturing process 500 performed on a first starting semiconductor wafer 502. Only a portion of the first wafer 502 is shown, and the portion shown includes the above-described sensor circuit 103 formed on and / or in the top side of the wafer 502.

[0028] Method 400 Figure 4 Continuing at 404 , trench formation is performed in a second semiconductor wafer, also referred to as a cap wafer. Figure 6 An example is shown in which a trench etching process 600 is performed on a second starting semiconductor wafer 602 (e.g., a second silicon wafer) using a trench etching mask 602. The etching process 600 selectively etches exposed portions of the bottom side of the wafer 602 to form a plurality of trenches 604 having trench sidewalls 610 and trench bottoms 612. Figure 6 Only a portion of a second wafer 602 is shown, and the portion shown represents another cell region or area of ​​the wafer 602 having a similar structure including trenches 604 extending between adjacent cell regions or areas. The etching process 600 forms the trenches 604 to a trench depth determined by the desired dimensions of the finished electronic device 100, such that the starting bottom side 614 of the wafer 602 is spaced a distance from the trench bottom 612 sufficient to allow placement of the bottom side 614. Figure 1 The desired thickness 113 of the insulating layer 112 extends above the top of the bonding material structure 114 in the embodiment of the present invention, while the bottom 612 of the trench will be at the above Figure 1 The tops of the solder structures 119 in FIG. 1 are sufficiently spaced apart along the third direction Z. FIG.

[0029] Later in Figure 4 An insulating layer is formed along the sidewalls of the trench at 406 . Figure 7 An example is shown in which a deposition process 700 is performed to deposit an insulating layer 112 to the aforementioned thicknesses 113 and 115 along the trench sidewalls 610 and bottom side 614 and on the trench bottom 612 of the wafer 602. In one example, the deposition process 700 is a plasma enhanced chemical vapor deposition (PECVD) process. Different deposition or layer formation techniques may be used in other embodiments. In another embodiment, the insulating layer 112 is formed only along the trench sidewalls 610 at 404. In one example, the deposited insulating layer 112 is or includes one of silicon dioxide, silicon nitride, and silicon oxynitride, or other suitable insulating material.

[0030] At 408 , an epoxy bonding material is formed on portions of the second semiconductor wafer. Figure 8 An example is shown in which a dispensing and patterning or other suitable bonding material forming process 800 is performed that forms an epoxy bonding material 114 on the insulating layer 112 in selected portions of the starting bottom side 614 of the second semiconductor wafer 602 .

[0031] In one example, method 400 Figure 4 The process continues at 410 where a polyimide layer is formed and patterned on the first wafer. Fig. 9 An example is shown in which process 900 is performed to deposit and pattern a polyimide layer 106 on the top side of selected portions of a previously formed protective overcoat layer 104 .

[0032] Method 400 Figure 4 The process continues at 412 where conductive terminals are formed in corresponding cell regions of the first processed wafer. Fig.10An example is shown, where a protective overcoat layer 104 and an under bump metal structure 116 are previously formed and patterned on a first semiconductor wafer 502. In one example, Fig.10 In the example of the present invention, a copper seed layer (not shown) is deposited with a plating mask 1002 (e.g., a photoresist) and an electroplating deposition process 1000 is performed to deposit copper or other suitable metal on the exposed portion of the under bump metal structure 116 and form the conductive terminal 117 to a suitable height determined by the final electronic device design. After the deposition process 1000, the plating mask 1002 is removed and the remaining portion of the copper seed layer is etched.

[0033] exist Figure 4 At 414 , the method 400 continues with solder formation on the conductive terminals 117 . Fig.11 An example is shown in which a process 1100 of forming a solder structure 119 on a top side of a conductive terminal 117 is performed.

[0034] The method 400 further includes a wafer bonding process of bonding the respective first wafer 502 and second wafer 602 to each other. Figure 4 Wafers 502 and 602 are bonded together at 416 in FIG. Fig.12 An example is shown in which a wafer bonding process 1200 is performed, which bonds the first wafer 502 and the second wafer 602 to each other, for example using an automated positioning device (not shown), wherein the insulating layer 112 of the sidewalls 610 of the trench 604 is laterally spaced apart from the conductive terminals 117 of the other semiconductor wafer 502, and the insulating layer 112 of the starting bottom side 614 of the second wafer 602 is bonded to the epoxy bonding material 114. In one example, the wafer bonding process 1200 further includes one or more heat, UV or other curing steps to cure the epoxy bonding material 114 to complete the wafer bonding.

[0035] In one example, method 400 Figure 4 The process continues at 418 where the second wafer 602 is back ground. Fig.13 An example is shown in which the back grinding process 1300 is performed using a suitable grinder (not shown) that grinds the back side of the second semiconductor wafer 602, and in one example the grinding process 1300 continues until the bottom of the trench is completely removed. The grinding process 1300 stops when the back side of the second semiconductor wafer 602 is vertically above the top of the solder structure 119, as shown in FIG. Fig.13 In one example, back grinding at 418 substantially separates the remaining portions of the second wafer 602 from each other, wherein the remaining portions of the wafer 602 are positioned in respective cell regions of the first semiconductor wafer 502 to provide a top cover or lid for the protected chamber 109 of the respective sensor circuit 103 .

[0036] Method 400 Figure 4 The process continues at 420 where the remaining portion of the second or cap wafer 602 is etched. Fig.14 An example is shown in which an etching process 1400 is performed that is selective to silicon and insulating layer 112 without significant impact, and the etching process 1400 removes conductive terminals and solder structures 117 and 119 or protective overcoat 104 and polyimide layer 106. The etching process 1400 selectively removes the second wafer (shown as Fig.14 Further portions of the back side of the second semiconductor die (labeled 110 in FIG. 1 ) and further lateral portions of the insulating layer 112 along the lateral side 111.

[0037] Method 400 Figure 4 The process continues at 422 where device or package separation is performed. Fig.15 An example is shown in which a dicing or other separation process 1500 is performed to cut or separate individual electronic devices 100 from the first wafer structure along line 1502. The package separation at 422 provides as described above in conjunction with Figure 1 and 1A In other examples, additional packaging processes or steps (not shown) may be performed, such as molding, using conductive terminals 117 (e.g., as described above). Figure 2 and 3 ) as shown in the figure, flip-chip attaching the shown portion of the electronic device to a substrate, etc.

[0038] Modifications are possible in the described examples and other implementations are possible within the scope of the claims.

Claims

1. An electronic device, comprising: a first semiconductor die having: a side extending in a first plane in orthogonal first and second directions; sensor circuitry along the side of the first semiconductor die; and a conductive terminal extending outwardly from the side of the first semiconductor die along a third direction orthogonal to the first direction and the second direction; as well as a second semiconductor die bonded to the first semiconductor die and having: a bottom side extending in a second plane in the first direction and the second direction; lateral sides extending in the plane of the second direction and the third direction; and an insulating layer, the bottom side of which is spaced apart from and faces the side of the first semiconductor die to form a protected chamber for the sensor circuit, the lateral side of the second semiconductor die is spaced apart from the conductive terminal along the first direction, the insulating layer extends along the lateral side of the second semiconductor die, and the insulating layer is spaced apart from and faces the conductive terminal along the first direction. 2 . The electronic device of claim 1 , wherein the insulating layer extends along the bottom side of the second semiconductor die. 3 . The electronic device according to claim 1 , wherein the insulating layer comprises one of silicon dioxide, silicon nitride, and silicon oxynitride.

4. The electronic device of claim 1 , comprising a bonding material extending along the third direction between a portion of the bottom side of the second semiconductor die and the side of the first semiconductor die to bond the first semiconductor die and the second semiconductor die to each other and form a sidewall of the protected chamber. The electronic device according to claim 4 , wherein the bonding material comprises epoxy resin. The electronic device of claim 4 , wherein the protected chamber is sealed by the bonding material.

7. The electronic device of claim 1, comprising a substrate connected to the conductive terminals.

8. The electronic device of claim 7, comprising a third semiconductor die connected to the substrate. 9 . The electronic device of claim 7 , comprising a packaging structure enclosing the first semiconductor die, the second semiconductor die, the substrate, and the conductive terminals.

10. The electronic device of claim 7, comprising solder balls connected to the substrate.

11. The electronic device of claim 1, comprising a packaging structure enclosing the first semiconductor die, the second semiconductor die, and a portion of the conductive terminal.

12. A system comprising: Printed circuit boards; An electronic device attached to the printed circuit board and comprising: a first semiconductor die having: a side extending in a first plane in a first direction orthogonal to a first direction and a second direction; a sensor circuit along the side of the first semiconductor die; and a conductive terminal extending outwardly from the side of the first semiconductor die along a third direction orthogonal to the first direction and the second direction; a substrate connected to the conductive terminals and to the printed circuit board; and A second semiconductor die, which is bonded to the first semiconductor die and has: a bottom side extending in a second plane of the first direction and the second direction; a lateral side extending in a plane of the second direction and the third direction; and an insulating layer, the bottom side is spaced apart from and faces the side of the first semiconductor die to form a protected chamber for the sensor circuit, the lateral side of the second semiconductor die is spaced apart from the conductive terminal along the first direction, the insulating layer extends along the lateral side of the second semiconductor die, and the insulating layer is spaced apart from and faces the conductive terminal along the first direction.

13. The system of claim 12, wherein the first semiconductor die is flip-chip attached to the substrate via the conductive terminals.

14. The system of claim 12, wherein the insulating layer extends along the bottom side of the second semiconductor die.

15. The system of claim 12, wherein the insulating layer comprises one of silicon dioxide, silicon nitride, and silicon oxynitride.

16. The system of claim 12, comprising solder balls connected to the substrate.

17. The system of claim 12, comprising a packaging structure enclosing the first semiconductor die, the second semiconductor die, and a portion of the conductive terminals.

18. A method of manufacturing an electronic device, the method comprising: forming trenches in a semiconductor wafer; forming an insulating layer on the sidewalls of the trench; bonding the semiconductor wafer to another semiconductor wafer, wherein the insulating layer of the sidewalls of the trench is laterally spaced apart from conductive terminals of the other semiconductor wafer; grinding the back side of the semiconductor wafer; etching the back side of the semiconductor wafer; and The semiconductor wafer and the another semiconductor wafer are singulated to separate electronic devices from the semiconductor wafer and the another semiconductor wafer.

19. The method of claim 18, wherein forming the insulating layer comprises performing a plasma enhanced chemical vapor deposition process to deposit the insulating layer on the sidewalls of the trench.

20. The method of claim 18, wherein the insulating layer comprises one of silicon dioxide, silicon nitride, and silicon oxynitride.

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