Vertical cavity surface emitting laser and preparation method thereof
By dividing multiple regions on the substrate and laying a laser structure to form multiple sub-vertical cavity surface emission lasers, the problem of limited wavelength tunable range in the prior art is solved, and the release of laser lights in multiple bands and the cost reduction is achieved.
Patent Information
- Application Number
- CN202411714197.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-02-28
AI Technical Summary
The wavelength tunable range of existing vertical cavity surface emitting lasers is limited, and multiple lasers are required to simultaneously emit lasers of different bands, resulting in high costs and the need to modulate the optical path after integration.
By dividing multiple regions on the substrate, the second sub-N-type DBR layer, the active layer and the P-type DBR layer are laminated and arranged respectively to form a plurality of sub-vertical cavity surface emission lasers, and each sub-laser can release a band of laser light.
It is realized that multiple sub-lasers are formed on one substrate at the same time, which can release multiple bands of laser light, reduces costs and simplifies the optical path modulation process.
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Figure CN119542920A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor lasers, and in particular to a vertical cavity surface emitting laser and a method for preparing the same. Background Art
[0002] Vertical-Cavity Surface-Emitting Laser (VCSEL) has the characteristics of low threshold current, low power consumption, high beam quality, compact structure, high reliability and low manufacturing cost. It is widely used in optical communications, consumer and industrial automation fields, such as 3D camera sensors, gesture perception systems, etc.
[0003] The wavelength tunable range of existing VCSELs is usually between -5nm and 5nm. Therefore, if you need to emit lasers of different wavelength bands, you need to use multiple VCSELs to emit simultaneously. After integrating multiple VCSELs, they will produce different degrees of warping. Therefore, after integration, you need to modulate the optical path for each VCSEL separately, which leads to high costs. Summary of the invention
[0004] The purpose of the present application is to provide a vertical cavity surface emitting laser and a method for preparing the same, which can emit lasers of multiple wavelength bands and have low cost, in view of the above-mentioned deficiencies in the prior art.
[0005] To achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
[0006] In one aspect of an embodiment of the present application, a vertical cavity surface emitting laser is provided, comprising: a substrate and a first sub-N-type DBR layer arranged on the substrate, wherein a surface of the first sub-N-type DBR layer facing away from the substrate is divided into a plurality of regions, a second sub-N-type DBR layer, an active layer and a P-type DBR layer are stacked on each region, an outer contour of a surface of the second sub-N-type DBR layer is located within an outer contour of an area where the second sub-N-type DBR layer is located, and an outer contour of a surface of the active layer and an outer contour of a surface of the P-type DBR layer do not exceed an outer contour of a surface of the second sub-N-type DBR layer, respectively.
[0007] Optionally, the P-type DBR layer includes at least two sub-P-type DBR layers, which are sequentially stacked on the active layer, and outer contours of surfaces of two adjacent sub-P-type DBR layers do not completely overlap with each other.
[0008] Optionally, the outer contour of the surface of the sub-P-type DBR layer attached to the active layer completely coincides with the outer contour of the surface of the active layer, and the outer contour of the surface of the second sub-N-type DBR layer completely coincides with the outer contour of the surface of the active layer.
[0009] Optionally, sizes of outer contours of the surface of the second N-type sub-DBR layer in different regions are not equal.
[0010] Optionally, the numbers of sub-P-type DBR layers in different regions are not equal.
[0011] Optionally, a metal connection layer is provided on a surface of the P-type DBR layer facing away from the active layer, and the metal connection layer completely covers the surface of the P-type DBR layer.
[0012] In another aspect of an embodiment of the present application, a method for preparing a vertical cavity surface emitting laser is provided, comprising: providing a substrate, and forming a first sub-N-type DBR layer on the substrate; dividing the surface of the first sub-N-type DBR layer into a plurality of regions, and forming a stacked second sub-N-type DBR layer, an active layer, and a P-type DBR layer on each region, respectively, wherein an outer contour of the surface of the second sub-N-type DBR layer is located within an outer contour of the region where the second sub-N-type DBR layer is located, and an outer contour of the surface of the active layer and an outer contour of the surface of the P-type DBR layer do not exceed an outer contour of the surface of the second sub-N-type DBR layer, respectively.
[0013] Optionally, dividing the surface of the first sub-N-type DBR layer into a plurality of regions, and sequentially forming the second sub-N-type DBR layer, the active layer and the P-type DBR layer on each region respectively comprises: sequentially forming a complete second sub-N-type DBR layer, a complete active layer and a complete P-type DBR layer on the first sub-N-type DBR layer; dividing the surface of the first sub-N-type DBR layer into a plurality of regions, and removing partial regions of the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer respectively according to the outer contours of the regions, thereby respectively forming a P-type DBR layer, an active layer and a second sub-N-type DBR layer in each region.
[0014] Optionally, removing partial regions of the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer respectively according to the outer contour of the region, thereby forming a P-type DBR layer, an active layer and a second sub-N-type DBR layer respectively in each region includes: etching the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer to expose the outer contour of the region, and forming a P-type DBR layer, an active layer and a second sub-N-type DBR layer respectively in each region.
[0015] Optionally, after etching the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer to expose the outer contour of the region, and forming the P-type DBR layer, the active layer and the second sub-N-type DBR layer in each region, the method further includes: etching the surface edge of the P-type DBR layer away from the active layer, and stopping the etching inside the P-type DBR layer to form at least two sub-P-type DBR layers.
[0016] The beneficial effects of this application include:
[0017] The present application provides a vertical cavity surface emitting laser, comprising: a substrate and a first sub-N-type DBR layer arranged on the substrate, the surface of the first sub-N-type DBR layer facing away from the substrate is divided into multiple regions, each region is stacked with a second sub-N-type DBR layer, an active layer and a P-type DBR layer, the outer contour of the surface of the second sub-N-type DBR layer is located within the outer contour of the region where the second sub-N-type DBR layer is located, and the outer contour of the surface of the active layer and the outer contour of the surface of the P-type DBR layer do not exceed the outer contour of the surface of the second sub-N-type DBR layer. The vertical cavity surface emitting laser is equivalent to forming multiple sub-vertical cavity surface emitting lasers on a substrate at the same time, and each sub-vertical cavity surface emitting laser can release a laser of a wavelength band. Therefore, the vertical cavity surface emitting laser can release lasers of multiple wavelength bands, which can be used for sensing different substances, and can also play a role in wavelength screening and be used as communication encryption. Moreover, multiple sub-vertical cavity surface emitting lasers can be formed on the same substrate using the same process, which can also reduce subsequent packaging problems, and only need to perform optical path modulation once when in use, which is low in cost. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0019] Figure 1 One of the structural schematic diagrams of the vertical cavity surface emitting laser provided in the embodiment of the present application;
[0020] Figure 2 The second structural schematic diagram of the vertical cavity surface emitting laser provided in the embodiment of the present application;
[0021] Figure 3 The third structural schematic diagram of the vertical cavity surface emitting laser provided in the embodiment of the present application;
[0022] Figure 4 A fourth structural schematic diagram of a vertical cavity surface emitting laser provided in an embodiment of the present application;
[0023] Figure 5 One of the flow charts of the method for preparing a vertical cavity surface emitting laser provided in an embodiment of the present application;
[0024] Figure 6 Flow chart 2 of the method for preparing a vertical cavity surface emitting laser provided in an embodiment of the present application;
[0025] Figure 7 A schematic diagram of the preparation process of a vertical cavity surface emitting laser provided in an embodiment of the present application;
[0026] Figure 8 The third flowchart of the method for preparing a vertical cavity surface emitting laser provided in an embodiment of the present application.
[0027] Icon: 10-vertical cavity surface emitting laser; 11-substrate; 12-first sub-N-type DBR layer; 13-columnar structure; 131-second sub-N-type DBR layer; 132-active layer; 133-P-type DBR layer; 1331-sub-P-type DBR layer; 134-metal connection layer; 20-complete second sub-N-type DBR layer; 30-complete active layer; 40-complete P-type DBR layer; 50-complete metal connection layer. DETAILED DESCRIPTION
[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0029] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. It should be noted that, in the absence of conflict, the various features in the embodiments of the present application can be combined with each other, and the combined embodiments are still within the scope of protection of the present application.
[0030] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0031] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0032] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0033] In one aspect of the embodiment of the present application, please refer to Figure 1 and Figure 2 A vertical cavity surface emitting laser 10 is provided, comprising: a substrate 11 and a first sub-N type DBR layer 12 arranged on the substrate 11, wherein the surface of the first sub-N type DBR layer 12 facing away from the substrate 11 is divided into a plurality of regions, and a second sub-N type DBR layer 131, an active layer 132 and a P type DBR layer 133 are stacked on each region, and an outer contour of a surface of the second sub-N type DBR layer 131 is located within an outer contour of an area where the second sub-N type DBR layer 131 is located, and an outer contour of a surface of the active layer 132 and an outer contour of a surface of the P type DBR layer 133 do not exceed an outer contour of a surface of the second sub-N type DBR layer 131, respectively.
[0034] The first sub-N-type DBR layer 12 is a complete film layer covering the surface of the substrate 11. The first sub-N-type DBR layer 12 may include a multilayer film layer formed by alternating growth of high and low refractive index dielectric materials. The surface of the first sub-N-type DBR layer 12 is divided into multiple regions, and the number of regions can be determined according to the required band range. The second sub-N-type DBR layer 131, the active layer 132 and the P-type DBR layer 133 are stacked in sequence above each region, that is, in each vertical cavity surface emitting laser 10, the number of the first sub-N-type DBR layer 12 is one, and the number of the second sub-N-type DBR layer 131, the active layer 132 and the P-type DBR layer 133 are all multiple, and are equal to the number of regions divided on the surface of the first sub-N-type DBR layer 12.
[0035] Among them, the outer contour of the surface of the second sub-N-type DBR layer 131 is located within the outer contour of the area where the second sub-N-type DBR layer 131 is located, that is, taking the surface of the first sub-N-type DBR layer 12 facing the second sub-N-type DBR layer 131 as the projection plane, the second sub-N-type DBR layer 131 is irradiated with a projection line perpendicular to the projection plane, and the outer contour of the projection pattern of the second sub-N-type DBR layer 131 is completely located inside the outer contour of the area where the second sub-N-type DBR layer 131 is located, and there is no overlapping area between the two outer contours.
[0036] The outer contour of the surface of the active layer 132 does not exceed the outer contour of the surface of the second sub-N-type DBR layer 131, that is, taking the surface of the second sub-N-type DBR layer 131 facing the active layer 132 as the projection plane, and irradiating the active layer 132 with a projection line perpendicular to the projection plane, the outer contour of the projection pattern of the active layer 132 obtained is completely located inside the outer contour of the surface of the second sub-N-type DBR layer 131, or the outer contour of the projection pattern of the active layer 132 obtained completely overlaps or partially overlaps with the outer contour of the surface of the second sub-N-type DBR layer 131.
[0037] The outer contour of the surface of the P-type DBR layer 133 does not exceed the outer contour of the surface of the second sub-N-type DBR layer 131, that is, taking the surface of the second sub-N-type DBR layer 131 facing the active layer 132 as the projection plane, and irradiating the P-type DBR layer 133 with a projection line perpendicular to the projection plane, the outer contour of the projection pattern of the obtained P-type DBR layer 133 is completely located inside the outer contour of the surface of the second sub-N-type DBR layer 131, or the outer contour of the projection pattern of the obtained P-type DBR layer 133 completely overlaps or partially overlaps with the outer contour of the surface of the second sub-N-type DBR layer 131.
[0038] In this way, columnar structures 13 can be formed on different regions of the first sub-N-type DBR layer 12, respectively. The columnar structure 13 includes the second sub-N-type DBR layer 131, the active layer 132 and the P-type DBR layer 133, and the columnar structures 13 on each region are separated from each other. In the columnar structure 13, the smaller the outer contour size of the surface of the second sub-N-type DBR layer 131 and the P-type DBR layer 133, the narrower the path for the current to pass through, and the easier it is for the current to accumulate inside the columnar structure 13 and at the junction of the columnar structure 13 and the first sub-N-type DBR layer 12, resulting in heating of the columnar structure 13 and the corresponding region on the first sub-N-type DBR layer 12. Heat generation can cause a red shift in the optical wavelength. When the sizes of the columnar structures 13 corresponding to the various regions of the first sub-N-type DBR layer 12 are different, each columnar structure 13 will generate heat to a different extent. Multiple regions of the first sub-N-type DBR layer 12 will also generate heat to a different extent, resulting in a red shift phenomenon to a different extent, releasing multiple bands.
[0039] The vertical cavity surface emitting laser 10 is equivalent to forming a plurality of sub-vertical cavity surface emitting lasers on a substrate 11 at the same time, and each sub-vertical cavity surface emitting laser can release a laser of a wavelength band. Therefore, the vertical cavity surface emitting laser 10 can release lasers of multiple wavelength bands, which can be used for sensing different substances, and can also play a role in wavelength screening and be used as communication encryption. Moreover, multiple sub-vertical cavity surface emitting lasers can be formed on the same substrate 11 using the same process, which can also reduce subsequent packaging problems, and only need to perform optical path modulation once when in use, which is low in cost.
[0040] Optionally, see Figure 3 and Figure 4 The P-type DBR layer 133 includes at least two sub-P-type DBR layers 1331, which are sequentially stacked on the active layer 132, and the outer contours of the surfaces of the two adjacent sub-P-type DBR layers 1331 do not completely overlap with each other.
[0041] The outer contours of the surfaces of the two adjacent sub-P-type DBR layers 1331 do not completely overlap each other, that is, taking the surface of the active layer 132 facing the P-type DBR layer 133 as the projection plane, the two adjacent sub-P-type DBR layers 1331 are irradiated with a projection line perpendicular to the projection plane, and the outer contour of the projection pattern of one of the sub-P-type DBR layers 1331 is completely located inside the outer contour of the other sub-P-type DBR layer 1331, or partially overlaps with the outer contour of the other sub-P-type DBR layer 1331. In this way, the side wall of the columnar structure has a turning point on the P-type DBR layer 133, and the turning point is located at the junction of the two adjacent sub-P-type DBR layers 1331.
[0042] like Figure 3 As shown, in the leftmost columnar structure, the P-type DBR layer 133 includes three sub-P-type DBR layers 1331, and the columnar structure has two turning points on the P-type DBR layer 133; in the middle columnar structure, the P-type DBR layer 133 includes only one sub-P-type DBR layer 1331, and the columnar structure does not have a turning point on the P-type DBR layer 133; in the rightmost columnar structure, the P-type DBR layer 133 includes two sub-P-type DBR layers 1331, and the columnar structure has one turning point on the P-type DBR layer 133. Figure 3 It can be seen that by changing the lateral size of the second sub-N-type DBR layer 131 in each columnar structure, the number of sub-P-type DBR layers 1331 in the P-type DBR layer 133, or the lateral size of each sub-P-type DBR layer 1331 in the P-type DBR layer 133, the columnar structure 13 corresponding to each area of the first sub-N-type DBR layer 12 can be made different, thereby producing different degrees of red shift phenomenon and releasing different bands.
[0043] Dividing the P-type DBR layer 133 into at least two sub-P-type DBR layers 1331 , and having two adjacent sub-P-type DBR layers 1331 with different lateral dimensions, can provide more solutions for changing the columnar structure 13 , thereby obtaining more combinations of wavebands.
[0044] Optionally, the number of sub-P-type DBR layers 1331 in different regions is not equal.
[0045] The P-type DBR layer 133 on different regions includes different numbers of sub-P-type DBR layers 1331, so that the shapes of the columnar structures corresponding to each region are different. Different shapes of the columnar structures can also produce different degrees of red shift phenomenon and release different bands.
[0046] Optionally, the outer contour of the surface of the sub-P-type DBR layer 1331 attached to the active layer 132 completely overlaps with the outer contour of the surface of the active layer 132 , and the outer contour of the surface of the second sub-N-type DBR layer 131 completely overlaps with the outer contour of the surface of the active layer 132 .
[0047] Optionally, see Figure 1 and Figure 3 , the sizes of the outer profiles of the surface of the second N-type sub-DBR layer 131 in different regions are not equal.
[0048] The unequal sizes of the outer contours of the surface of the second N-type DBR layer 131 in different regions can make the sizes of the columnar structures 13 different, thereby generating red shift phenomena of different degrees and releasing different wavelength bands.
[0049] With such configuration, the two opposite surfaces of the active layer 132 can be completely covered by the surface of the sub-P-type DBR layer 1331 and the surface of the second sub-N-type DBR layer 131 , so that the active layer 132 can be fully utilized and protected.
[0050] Optionally, a metal connection layer 134 is provided on a surface of the P-type DBR layer 133 facing away from the active layer 132 , and the metal connection layer 134 completely covers the surface of the P-type DBR layer 133 .
[0051] The metal connection layer 134 is used to connect to an external circuit and introduce current into the P-type DBR layer 133 . Meanwhile, it can also protect the P-type DBR layer 133 .
[0052] Please refer to Figure 5 This embodiment also provides a method for preparing a vertical cavity surface emitting laser 10, comprising:
[0053] S100: providing a substrate, and forming a first sub-N-type DBR layer on the substrate.
[0054] S200: dividing the surface of the first sub-N-type DBR layer into a plurality of regions, and forming a stacked second sub-N-type DBR layer, an active layer and a P-type DBR layer on each region, respectively, wherein an outer contour of the surface of the second sub-N-type DBR layer is located within an outer contour of the region where the second sub-N-type DBR layer is located, and an outer contour of the surface of the active layer and an outer contour of the surface of the P-type DBR layer do not exceed an outer contour of the surface of the second sub-N-type DBR layer, respectively.
[0055] Please refer to Figure 1 The method for preparing the vertical cavity surface emitting laser 10 forms a plurality of sub-vertical cavity surface emitting lasers on a substrate 11 at the same time, and each sub-vertical cavity surface emitting laser can release a laser of a wavelength band. Therefore, the prepared vertical cavity surface emitting laser 10 can release lasers of multiple wavelength bands, which can be used for sensing different substances, and can also play a role in wavelength screening and be used as communication encryption. Moreover, a plurality of sub-vertical cavity surface emitting lasers can be formed on the same substrate 11 using the same process, which can also reduce subsequent packaging problems, and only one optical path modulation is required during use, which is relatively low in cost.
[0056] Optionally, see Figure 6 , dividing the surface of the first sub-N-type DBR layer into a plurality of regions, and sequentially forming a second sub-N-type DBR layer, an active layer and a P-type DBR layer on each region respectively, including:
[0057] S210: forming a complete second sub-N-type DBR layer, a complete active layer and a complete P-type DBR layer in sequence on the first sub-N-type DBR layer.
[0058] Please refer to Figure 7 and Figure 1 , the complete second sub-N-type DBR layer 20, the complete active layer 30 and the complete P-type DBR layer 40 are complete film layers sequentially covering the surface of the first sub-N-type DBR layer 12. The second sub-N-type DBR layer 131 on each region of the first sub-N-type DBR layer 12 is obtained from a complete second sub-N-type DBR layer 20. Similarly, the active layer 132 on each region is obtained from a complete active layer 30, and the P-type DBR layer 133 on each region is obtained from a complete P-type DBR layer 40. If a metal connection layer 134 is also provided on the P-type DBR layer 133, a complete metal connection layer 50 is also formed on the complete P-type DBR layer 40, and the metal connection layer 134 on each region is obtained from a complete metal connection layer 50. The complete second sub-N-type DBR layer 20, the complete active layer 30, the complete P-type DBR layer 40 and the complete metal connection layer 50 can all be obtained by a material deposition process.
[0059] S220: dividing the surface of the first sub-N-type DBR layer into a plurality of regions, and removing partial regions of the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer respectively according to the outer contours of the regions, thereby forming a P-type DBR layer, an active layer and a second sub-N-type DBR layer in each region respectively.
[0060] According to the division of the area on the first sub-N-type DBR layer 12, part of the material of the complete P-type DBR layer 40 is removed to divide it into multiple independent parts, and the edges of multiple areas are exposed. Each independent part is located on an area of the first sub-N-type DBR layer 12, so that each independent part is a P-type DBR layer 133 corresponding to each area.
[0061] Similarly, part of the material of the complete active layer 30 is removed to divide it into multiple independent parts, and the edges of multiple regions are exposed. Each independent part is located under a P-type DBR layer 133, so that each independent part is an active layer 132 corresponding to each region.
[0062] Part of the material of the complete second sub-N-type DBR layer 20 is removed to divide it into multiple independent parts, and the edges of multiple regions are exposed. Each independent part is located under an active layer 132, so that each independent part is the second sub-N-type DBR layer 131 corresponding to each region.
[0063] By dividing the complete film layer, the second sub-N-type DBR layer 131, the active layer 132 and the P-type DBR layer 133 are respectively obtained in each region, which can simplify the preparation process and reduce the cost.
[0064] Optionally, see Figure 8 , respectively removing a portion of the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer according to the outer contour of the region, thereby forming a second sub-N-type DBR layer, an active layer and a P-type DBR layer in each region, including:
[0065] S221: etching the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer to expose the outer contour of the region, and forming a P-type DBR layer, an active layer and a second sub-N-type DBR layer in each region.
[0066] Please refer to Figure 7 and Figure 1 , part of the material of each complete film layer is removed by etching, so that the second sub-N-type DBR layer 131, the active layer 132 and the P-type DBR layer 133 are respectively obtained in each region, which can improve the dimensional accuracy of the second sub-N-type DBR layer 131, the active layer 132 and the P-type DBR layer 133 without causing damage to other film layers that do not need to be etched.
[0067] Optionally, see Figure 8, etching the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer to expose the outer contour of the region, and forming the second sub-N-type DBR layer, the active layer and the P-type DBR layer in each region, the method further includes:
[0068] S222: etching the surface edge of the P-type DBR layer away from the active layer, and stopping the etching inside the P-type DBR layer to form at least two sub-P-type DBR layers.
[0069] Please refer to Figure 7 and Figure 3 , the surface edge of the P-type DBR layer 133 away from the active layer 132 is etched at least once, and each etching can form a column, and the size of each column is different. In this way, the shape of the columnar structure can be more diverse, thereby providing more solutions for changing the columnar structure 13 and obtaining more combinations of bands.
[0070] like Figure 3 As shown, in the leftmost columnar structure, the surface edge of the P-type DBR layer 133 away from the active layer 132 is etched twice to form three columns and three sub-P-type DBR layers 1331. In the rightmost columnar structure, the surface edge of the P-type DBR layer 133 away from the active layer 132 is etched once to form two columns and two sub-P-type DBR layers 1331.
[0071] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A vertical cavity surface emitting laser, characterized in that: include: A substrate and a first sub-N-type DBR layer arranged on the substrate, wherein the surface of the first sub-N-type DBR layer facing away from the substrate is divided into a plurality of regions, a second sub-N-type DBR layer, an active layer and a P-type DBR layer are stacked on each of the regions, an outer contour of a surface of the second sub-N-type DBR layer is located within an outer contour of the region where the second sub-N-type DBR layer is located, and an outer contour of a surface of the active layer and an outer contour of a surface of the P-type DBR layer do not exceed an outer contour of a surface of the second sub-N-type DBR layer, respectively.
2. The vertical cavity surface emitting laser according to claim 1, characterized in that: The P-type DBR layer includes at least two sub-P-type DBR layers, which are sequentially stacked on the active layer, and the outer contours of the surfaces of two adjacent sub-P-type DBR layers do not completely overlap with each other.
3. The vertical cavity surface emitting laser according to claim 2, characterized in that: The outer contour of the surface of the sub-P-type DBR layer attached to the active layer completely coincides with the outer contour of the surface of the active layer, and the outer contour of the surface of the second sub-N-type DBR layer completely coincides with the outer contour of the surface of the active layer.
4. The vertical cavity surface emitting laser according to claim 1, characterized in that: The sizes of the outer contours of the surfaces of the second N-type sub-DBR layers in different regions are not equal.
5. The vertical cavity surface emitting laser according to claim 2, characterized in that: The numbers of the sub-P-type DBR layers in different regions are not equal.
6. The vertical cavity surface emitting laser according to any one of claims 1 to 5, characterized in that: A metal connection layer is provided on the surface of the P-type DBR layer away from the active layer, and the metal connection layer completely covers the surface of the P-type DBR layer.
7. A method for preparing a vertical cavity surface emitting laser, characterized in that: include: Providing a substrate, and forming a first sub-N-type DBR layer on the substrate; The surface of the first sub-N-type DBR layer is divided into a plurality of regions, and a stacked second sub-N-type DBR layer, an active layer and a P-type DBR layer are formed on each of the regions, respectively, wherein an outer contour of the surface of the second sub-N-type DBR layer is located within an outer contour of the region where the second sub-N-type DBR layer is located, and an outer contour of the surface of the active layer and an outer contour of the surface of the P-type DBR layer do not exceed an outer contour of the surface of the second sub-N-type DBR layer, respectively.
8. The method for preparing a vertical cavity surface emitting laser according to claim 7, characterized in that: The step of dividing the surface of the first sub-N-type DBR layer into a plurality of regions, and sequentially forming a second sub-N-type DBR layer, an active layer and a P-type DBR layer on each region comprises: sequentially forming a complete second sub-N-type DBR layer, a complete active layer and a complete P-type DBR layer on the first sub-N-type DBR layer; The surface of the first sub-N-type DBR layer is divided into a plurality of regions, and partial regions of the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer are removed respectively according to the outer contours of the regions, so as to form the P-type DBR layer, the active layer and the second sub-N-type DBR layer in each of the regions.
9. The method for preparing a vertical cavity surface emitting laser according to claim 8, characterized in that: The removing of partial regions of the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer according to the outer contour of the region, thereby forming a P-type DBR layer, an active layer and a second sub-N-type DBR layer in each of the regions, respectively, comprises: The complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer are etched to expose the outer contours of the regions, and a P-type DBR layer, an active layer and a second sub-N-type DBR layer are formed in each region, respectively.
10. The method for preparing a vertical cavity surface emitting laser according to claim 9, characterized in that: After etching the complete P-type DBR layer, the complete active layer and the complete second sub-N-type DBR layer to expose the outer contour of the region, and forming a P-type DBR layer, an active layer and a second sub-N-type DBR layer in each region, the method further comprises: The surface edge of the P-type DBR layer away from the active layer is etched, and the etching stops inside the P-type DBR layer to form at least two sub-P-type DBR layers.