Self-mixing interferometry using backside emitting vcsel diode with
By integrating VCSEL and RCPD in the photoelectric sensor and using self-hybrid interference technology, the existing photoelectric sensors have solved the problems of low signal-to-noise ratio, insufficient spatial resolution and high operating voltage, thus achieving higher measurement accuracy and lower operating costs.
CN119687778APending Publication Date: 2025-03-25APPLE INC
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Patent Information
- Application Number
- CN202411332201.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-09-20
- Filing Date
- 2024-09-24
- Publication Date
- 2025-03-25
AI Technical Summary
Technical Problem
When existing photoelectric sensors detect parameters such as displacement, distance, and motion of target objects, there are problems such as low signal-to-noise ratio, insufficient spatial resolution and high operating voltage.
Method used
An integrated back-emission vertical cavity surface emission laser (VCSEL) and resonant cavity photodetector (RCPD) are used to detect changes in the properties of lasers through self-mixed interference technology, thereby achieving accurate measurement of target object parameters.
Benefits of technology
The signal-to-noise ratio and spatial resolution of the photosensitive sensor are improved, the operating voltage is reduced, and the measurement accuracy of target object parameters is enhanced.
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Abstract
The invention relates to self-mixing interferometry using a back-emitting VCSEL diode with an integrated photodetector. Embodiments described herein include a photosensing device having a vertical cavity surface emitting laser (VCSEL), a resonant cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partially defined by a first set of semiconductor layers disposed on the substrate. The first semiconductor layer set includes a first active region. The VCSEL is configured to emit laser light toward the substrate upon application of a first bias voltage and to undergo self-mixing interference upon receipt of its reflection or backscattering. The RCPD is vertically adjacent to the VCSEL and is at least partially defined by a second set of semiconductor layers disposed on the substrate. The second semiconductor layer set includes a second active region. The RCPD is configured to detect self-mixing interference when the second bias voltage is applied. A tunnel junction is disposed between the first active region and the second active region.
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