Preparation method of display panel, display panel and display device

Abstract

The invention relates to a preparation method of a display panel, the display panel and a display device.After a first anode layer is formed on a substrate, an initial anode opening is formed in the first anode layer, an anode structure is formed in the initial anode opening, and the anode opening is formed between the anode structure and the remaining first anode layer; the size of the opening of the anode layer is reduced while the opening of the anode layer is reserved, then the cathode layer is formed on the sides, away from the substrate, of the first anode layer and the anode structure, so that the cathode layer is in lap joint with the first anode layer and the anode structure, and under the condition that the effective lap joint area of the cathode layer, the first anode layer and the anode structure is fixed, the effective lap joint area is increased. The size of the anode opening is small, so that the overall lap joint area can be reduced, and the frame size of the display panel is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of display panels, and in particular to a method for preparing a display panel, a display panel and a display device. Background Art

[0002] With the continuous development of display technology, display panels have been widely used in people's production and life. More and more electronic products such as smart phones, smart watches, and tablets are integrated with display panels.

[0003] However, there are still some technical problems in current display panels that need to be solved urgently. For example, the border of the display panel in the related technology is relatively wide, which affects the appearance of the screen. Summary of the invention

[0004] Based on this, it is necessary to provide a method for preparing a display panel, a display panel and a display device that can achieve a narrow frame design in order to solve the above technical problems.

[0005] In a first aspect, the present application provides a method for preparing a display panel, the method comprising:

[0006] providing a substrate;

[0007] forming a first anode layer on one side of the substrate;

[0008] forming an initial anode opening in the first anode layer;

[0009] forming an anode structure in the initial anode opening; wherein an anode opening is provided between the anode structure and the remaining first anode layer;

[0010] A cathode layer is formed on a side of the first anode layer and the anode structure away from the substrate.

[0011] In one embodiment, forming an initial anode opening in the anode layer includes:

[0012] forming a first mask layer on a side of the first anode layer away from the substrate;

[0013] Patterning the first mask layer to form a plurality of first mask structures arranged at intervals;

[0014] The first anode layer is etched based on the first mask structures arranged at intervals to form the initial anode opening.

[0015] In one embodiment, before forming the anode structure in the initial anode opening, the method further comprises:

[0016] Performing dry etching on each of the first mask structures to remove at least a portion of the sidewalls of the first mask structure to form a target mask structure; wherein a projection of a first surface of the target mask structure away from the first anode layer toward the substrate covers a projection of a second surface of the target mask structure close to the first anode layer toward the substrate;

[0017] The forming of an anode structure in the initial anode opening comprises:

[0018] The anode structure is formed in the anode opening based on the target mask structure.

[0019] In one embodiment, the forming the anode structure based on the target mask structure and the anode opening includes:

[0020] forming a metal layer on a side of the target mask structure away from the substrate and in the initial anode opening;

[0021] forming a second mask layer on a side of the metal layer away from the substrate;

[0022] Patterning the second mask layer to form a plurality of second mask structures that are spaced apart from each other;

[0023] The metal layer is etched based on the second mask structures arranged at multiple intervals to form the anode structure.

[0024] In one embodiment, before forming a cathode layer on the first anode layer and the side of the anode structure away from the substrate, the method further comprises:

[0025] A removal process is performed on each of the target mask structures and each of the second mask structures.

[0026] In one embodiment, before etching the first anode layer using the first mask structure arranged based on a plurality of intervals, the method further includes:

[0027] forming an etching stop structure on a side of each of the first mask structures away from the substrate;

[0028] After dry etching each of the first mask structures to remove at least a portion of the sidewalls of the first mask structures to form a target mask structure, the method further includes:

[0029] Each of the etching stop structures is removed.

[0030] In one embodiment, before forming a cathode layer on the first anode layer and the anode structure on a side away from the substrate, the method further comprises:

[0031] A dielectric layer is formed in the anode opening; wherein the cathode layer covers the dielectric layer.

[0032] In one embodiment, the width of the anode opening in the extension direction of the anode layer ranges from 0.1 um to 2.5 um.

[0033] In a second aspect, the present application provides a display panel, the display panel comprising:

[0034] substrate;

[0035] A first anode layer, located on one side of the substrate, wherein the first anode layer has an initial anode opening;

[0036] an anode structure located in the initial anode opening, wherein an anode opening is provided between the anode structure and the first anode layer;

[0037] The cathode layer is located on a side of the first anode layer and the anode structure away from the substrate.

[0038] In a third aspect, the present application provides a display device, wherein the display device is manufactured using the method for manufacturing a display panel as described in any of the above embodiments.

[0039] The above-mentioned display panel preparation method, display panel and display device, during the preparation process of the display panel, the display panel needs to undergo a high-temperature heating process, and the substrate will generate water vapor during the high-temperature heating process. After the first anode layer is formed on the substrate, the present application forms an initial anode opening in the first anode layer, and then forms an anode structure in the initial anode opening, and an anode opening is provided between the anode structure and the remaining first anode layer, while retaining the opening of the anode layer and reducing the size of the anode layer opening, and then a cathode layer is formed on the side of the first anode layer and the anode structure away from the substrate, so that the cathode layer overlaps with the first anode layer and the anode structure. When the effective overlapping area between the cathode layer, the first anode layer and the anode structure is constant, since the size of the anode opening in the present application is relatively small, the overall overlapping area can be reduced, thereby reducing the size of the display panel frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0041] FIG1 is a partial top view of a display panel in the related art;

[0042] FIG2 is a schematic flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0043] 3 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S201 in the method for preparing a display panel provided in an embodiment of the present application;

[0044] FIG4 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S202 in the method for preparing a display panel provided in an embodiment of the present application;

[0045] FIG5 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S203 in the method for preparing a display panel provided in an embodiment of the present application;

[0046] FIG6 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S204 in the method for preparing a display panel provided in an embodiment of the present application;

[0047] FIG. 7 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S205 in the method for preparing a display panel provided in an embodiment of the present application;

[0048] FIG8 is a partial top view of a display panel obtained in step S201 in the method for manufacturing a display panel provided in an embodiment of the present application;

[0049] FIG. 9 is a schematic flow chart of step S203 in the method for manufacturing a display panel provided in an embodiment of the present application;

[0050] FIG10 is a schematic diagram of a cross-sectional structure of a display panel obtained in step S901 in a method for manufacturing a display panel provided in an embodiment of the present application;

[0051] FIG. 11 is a schematic diagram of a cross-sectional structure of a display panel obtained in step S902 in a method for manufacturing a display panel provided in an embodiment of the present application;

[0052] FIG12 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S903 in the method for preparing a display panel provided in an embodiment of the present application;

[0053] 13 is a schematic diagram of the cross-sectional structure of a display panel obtained before step S903 in the method for preparing a display panel provided in an embodiment of the present application;

[0054] 14 is a schematic diagram of a cross-sectional structure of a display panel obtained before step S903 in a method for preparing a display panel provided in another embodiment of the present application;

[0055] FIG15 is a schematic diagram of the cross-sectional structure of a display panel obtained before step S204 in the method for preparing a display panel provided in an embodiment of the present application;

[0056] FIG. 16 is a schematic flow chart of step S204 in the method for manufacturing a display panel provided in an embodiment of the present application;

[0057] FIG17 is a schematic diagram of a cross-sectional structure of a display panel obtained in step S1601 in a method for manufacturing a display panel provided in an embodiment of the present application;

[0058] FIG. 18 is a schematic diagram of a cross-sectional structure of a display panel obtained in step S1602 in a method for manufacturing a display panel provided in an embodiment of the present application;

[0059] FIG19 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S1603 in the method for preparing a display panel provided in an embodiment of the present application;

[0060] FIG20 is a schematic diagram of the cross-sectional structure of a display panel obtained in step S1604 in the method for preparing a display panel provided in an embodiment of the present application;

[0061] 21 is a schematic diagram of the cross-sectional structure of a display panel obtained after step S1604 and before step S205 in the method for preparing a display panel provided in an embodiment of the present application;

[0062] FIG. 22 is a schematic diagram of the cross-sectional structure of a display panel obtained before step S205 in the method for preparing a display panel provided in an embodiment of the present application.

[0063] Explanation of the accompanying drawings: 1-substrate, 11-first flexible substrate, 12-barrier layer, 13-second flexible substrate, 14-buffer layer, 15-gate insulating layer, 16-capacitor insulating layer, 17-interlayer insulating layer, 18-metal layer, 19-organic flat layer, 2-first anode layer, 30-metal layer, 3-anode structure, 4-cathode layer, 5-first mask layer, 51-first mask structure, 52-target mask structure, 6-etching blocking structure, 7-second mask layer, 71-second mask structure, 8-dielectric layer. DETAILED DESCRIPTION

[0064] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0065] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0066] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0067] In the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity. It is understood that when a layer or element is referred to as being "on" another layer or substrate, the layer or element may be directly on the other layer or substrate, or there may be intervening layers. In addition, it is also understood that when a layer is referred to as being "between" two layers, the layer may be the only layer between the two layers, or there may be one or more intervening layers. In addition, the same reference numerals always represent the same elements.

[0068] In the following embodiments, when a layer, region, or element is "connected", it can be interpreted that the layer, region, or element is not only directly connected but also connected through other constituent elements placed therebetween. For example, when a layer, region, element, etc. is described as being connected or electrically connected, the layer, region, element, etc. can be connected or electrically connected not only directly or directly, but also through another layer, region, element, etc. placed therebetween.

[0069] Hereinafter, although terms such as "first", "second", etc. may be used to describe various components, these components are not necessarily limited to the above terms. The above terms are only used to distinguish one component from another. It will also be understood that expressions used in the singular include plural expressions unless the expression in the singular has an obviously different meaning in the context.

[0070] When a statement such as "at least one (of)..." is located after a list of elements, it modifies the entire list of elements rather than the individual elements in the list. The term "and / or" as used herein includes any and all combinations of one or more related listed items. As used in the application documents, the term "and / or" includes any and all combinations of one or more related listed items. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0071] Electronic or electrical devices and / or any other related devices or components according to the embodiments of the concepts of the present application described herein (for example, a display device including a display panel and a display panel driver, wherein the display panel driver also includes a drive controller, a gate driver, a gamma reference voltage generator, a data driver, and an emission driver) can be implemented using any appropriate hardware, firmware (such as a dedicated integrated circuit), software, or a combination of software, firmware, and hardware. For example, the various components of these devices may be formed on an integrated circuit (IC) chip or on separate IC chips. In addition, the various components of these devices may be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on a substrate. In addition, the various components of these devices may be processes or threads that run on one or more processors in one or more computing devices to execute computer program instructions and interact with other system components to perform the various functions described herein. The computer program instructions are stored in a memory that can be implemented in a computing device using standard storage devices (e.g., such as random access memory (RAM). The computer program instructions can also be stored in other non-transitory computer-readable media (e.g., such as CD-ROMs, flash drives, etc.). Moreover, those skilled in the art should recognize that the functions of various computing devices can be combined or integrated into a single computing device, or the functions of a particular computing device can be distributed on one or more other computing devices without departing from the spirit and scope of the exemplary embodiments of the concepts of the present application.

[0072] Although exemplary embodiments of display modules and display devices including display modules have been specifically described herein, many modifications and variations will be apparent to those skilled in the art. Therefore, it will be understood that display modules and display devices including display modules constructed according to the principles of the present application may be implemented in addition to those specifically described herein. The present application is also defined in the claims and their equivalents.

[0073] In the related art, when preparing the display panel, it is necessary to undergo a high-temperature heating process. The substrate under the anode layer will generate water vapor during the high-temperature heating process. In order to prevent the anode layer from being lifted up by water vapor and forming bulges, holes and voids, it is necessary to open the anode layer so that the water vapor can evaporate outward through the opening of the anode layer. For the frame area of ​​the display panel, in order to avoid affecting the display effect of the display panel, it is necessary to ensure that the current density of the cathode layer is constant, that is, it is necessary to ensure that the effective overlap area of ​​the anode layer and the cathode layer is constant. Due to the limited resolution capability of the exposure machine, the size of the opening K1 of the anode layer is generally not less than 1.5μm*1.5μm. Please refer to Figure 1, which is a schematic diagram of the overlap of the anode layer and the cathode layer in the display panel in the related art, wherein K1 is the opening of the anode layer, S1 is the effective overlap area of ​​the anode layer and the cathode layer, and when the number of openings K1 of the anode layer is constant, exemplarily, the anode layer has ten openings, and the larger the size of the opening K1, the larger the area of ​​the overall overlap area of ​​the anode layer and the cathode layer, which leads to a larger area of ​​the frame area, which is not conducive to the narrow frame design of the display panel.

[0074] Based on the above reasons, as shown in FIG. 2 , the present application provides a method for preparing a display panel capable of realizing a narrow frame design, and the method for preparing the display panel includes steps S201 to S205 .

[0075] S201: providing a substrate.

[0076] In one example, as shown in FIG3 , the substrate 1 may include a first flexible substrate 11, a barrier layer 12, a second flexible substrate 13, a buffer layer 14, a gate insulating layer 15, a capacitor insulating layer 16, an interlayer insulating layer 17, a metal layer 18, and an organic planar layer 19. The preparation process of the substrate includes: forming the barrier layer 12 on one side of the first flexible substrate 11, forming the second flexible substrate 13 on the side of the barrier layer 12 away from the first flexible substrate 11, forming the buffer layer 14 on the side of the second flexible substrate 13 away from the first flexible substrate 11, forming the gate insulating layer 15 on the side of the buffer layer 14 away from the first flexible substrate 11, forming the capacitor insulating layer 16 on the side of the gate insulating layer 15 away from the first flexible substrate 11, forming the interlayer insulating layer 17 on the side of the capacitor insulating layer 16 away from the first flexible substrate 11, forming the metal layer 18 on the side of the interlayer insulating layer 17 away from the first flexible substrate 11, and forming the organic planar layer 19 on the side of the metal layer 18 away from the first flexible substrate 11.

[0077] S202: forming a first anode layer on one side of the substrate.

[0078] Please refer to FIG. 4 , after the substrate 1 is formed, the first anode layer 2 may be formed on a side of the organic planar layer 19 away from the first flexible substrate 11 .

[0079] S203: forming an initial anode opening in the first anode layer.

[0080] The preparation process of the display panel needs to undergo a high-temperature heating process. The organic flat layer 19 will produce water vapor during the high-temperature heating process. To prevent the first anode layer from being lifted up by the water vapor and forming a bulge, a hole or a void, please refer to Figure 5. An initial anode opening K2 can be formed in the first anode layer 2 to prevent water vapor from damaging the first anode layer 2.

[0081] S204: forming an anode structure in the initial anode opening, wherein an anode opening is provided between the anode structure and the remaining first anode layer.

[0082] In applications, an exposure machine is generally used to set an opening on the first anode layer. Due to the limited resolution capability of the exposure machine, the size of the opening on the anode layer is generally not less than 1.5μm*1.5μm, making the size of the anode opening on the first anode layer larger. To reduce the size of the opening on the anode layer, please refer to FIG. 6. The anode structure 3 can be formed in the initial anode opening K2, so that there is an anode opening K3 between the anode structure 3 and the remaining first anode layer 2. It can be understood that since the anode structure 3 is formed in the initial anode opening K2, the size of the anode opening K3 between the anode structure 3 and the remaining first anode layer 2 must be smaller than the size of the initial anode opening K2, thereby reducing the size of the opening on the anode layer.

[0083] S205: forming a cathode layer on the first anode layer and the side of the anode structure away from the substrate.

[0084] Please refer to FIG7 . After the anode structure 3 is formed in the initial anode opening K2, the cathode layer 4 can be formed on the side of the first anode layer 2 and the anode structure 3 away from the substrate 1. Please refer to FIG1 and FIG8 . FIG8 is a schematic diagram of the overlap of the first anode layer 2 and the anode structure 3 with the cathode layer 4 in the display panel of the present application, wherein S2 is the effective overlap area of ​​the cathode layer 4 with the first anode layer 2 and the anode structure 3. Since the anode structure 3 is formed in the initial anode opening K2 in the present application, the size of the anode opening K3 is small. Therefore, compared with the display panel in the related art, the display panel of the present application can reduce the overall overlap area while ensuring that the overlap area of ​​the anode layer and the cathode layer remains unchanged and the number of openings on the anode layer remains unchanged, thereby facilitating the display panel to achieve a narrow frame design.

[0085] The preparation method of the above-mentioned display panel, after forming a first anode layer on a substrate, forms an initial anode opening in the first anode layer, and then forms an anode structure in the initial anode opening, and has an anode opening between the anode structure and the remaining first anode layer, while retaining the opening of the anode layer and reducing the size of the anode layer opening, and then forms a cathode layer on the side of the first anode layer and the anode structure away from the substrate, so that the cathode layer overlaps with the first anode layer and the anode structure. When the effective overlapping area between the cathode layer, the first anode layer and the anode structure is constant, since the size of the anode opening in the present application is relatively small, the overall overlapping area can be reduced, thereby reducing the size of the display panel frame.

[0086] In one embodiment, referring to FIG. 9 , step S203 , forming an initial anode opening in the anode layer includes steps S901 to S903 .

[0087] S901: forming a first mask layer on a side of the first anode layer away from the substrate.

[0088] Please refer to FIG. 10 . In order to pattern the first anode layer 2 , it is first necessary to form a first mask layer 5 on a side of the first anode layer 2 away from the substrate 1 . The first mask layer 5 may be a photoresist.

[0089] S902: patterning the first mask layer to form a plurality of first mask structures that are spaced apart from each other.

[0090] Please refer to FIG. 11 . After the first mask layer 5 is formed, it is necessary to pattern the first mask layer 5 , that is, perform photolithography and development processing on the first mask layer 5 to form a plurality of first mask structures 51 arranged at intervals.

[0091] S903: etching the first anode layer based on a plurality of first mask structures arranged at intervals to form an initial anode opening.

[0092] Please refer to FIG. 12 . After forming a plurality of first mask structures 51 disposed at intervals, the first anode layer 2 can be etched to remove the portion of the first anode layer 2 not protected by the first mask structure 51 to form an initial anode opening K2. During the etching process, a first type of etching gas can be introduced into the first anode layer. Since the first type of etching gas will gather between the first mask structures 51 disposed at intervals and on the side close to the substrate 1, the sidewall of the portion of the first anode layer 2 protected by the first mask structure 51 will also be etched, so that the sidewall of the remaining first anode layer 2 is an arc or an inclined surface, and the length of the remaining first anode layer 2 away from the substrate 1 is greater than the length of the remaining first anode layer 2 close to the substrate 1, and less than the length of the first mask structure 51 close to the substrate 1. In Figure 12, taking the case where the side wall of the remaining first anode layer 2 is beveled as an example, since the first type of etching gas will etch the side wall of the portion of the first anode layer 2 protected by the first mask structure 51, when the anode structure 3 is subsequently formed in the initial anode opening K2, it can be ensured that the anode structure 3 and the remaining first anode layer 2 will not adhere to each other, that is, it is ensured that there is an anode opening K3 between the anode structure 3 and the remaining first anode layer 2, and the size of the anode opening K3 is relatively small.

[0093] In one embodiment, in step S903, before etching the first anode layer based on a plurality of first mask structures arranged at intervals, the method for manufacturing a display panel further includes: forming an etching stop structure on a side of each first mask structure away from the substrate.

[0094] Please refer to FIG. 13 , before etching the first anode layer 2, an etching stopper structure 6 may be formed on the side of each first mask structure 51 away from the substrate 1. Please refer to FIG. 14 , after etching the first anode layer 2 based on the first mask structures 51 arranged at multiple intervals, an etching stopper structure 6 may be formed on the side of each first mask structure 51 away from the substrate 1. The etching stopper structure 6 is mainly used to protect the corresponding first mask structure 51 in subsequent processes. Preferably, the first anode layer 2 may be etched after the etching stopper structure 6 is formed on the side of each first mask structure 51 away from the substrate 1.

[0095] It can be understood that if the first anode layer 2 is etched first and then an etching stop structure 6 is formed on the side of each first mask structure 51 away from the substrate 1 and on the side of the substrate close to the first anode layer 2, it is first necessary to form an etching stop layer on the side of each first mask structure 51 away from the substrate 1, and then the etching stop layer is patterned. In the process of patterning the etching stop layer, the etching stop layer may be adhered to the first anode layer 2 due to incomplete etching, which may cause a short circuit in the first anode layer 2 later. If the etching stop structure 6 is first formed on the side of each first mask structure 51 away from the substrate 1 and then the first anode layer 2 is etched, that is, the etching stop layer is first formed on the side of each first mask structure 51 away from the substrate 1 and the side of the first anode layer 2 away from the substrate 1, and then the etching stop layer is patterned to form the etching stop structure 6, and then the first anode layer 2 is etched based on the etching stop structure 6 and the first mask structure 51, since the first anode layer 2 is etched later, it can be ensured that there is no adhesion between the etching stop layer and the first anode layer 2 after the first anode layer 2 is etched, which is beneficial to ensure the display performance of the display panel.

[0096] In one embodiment, in step S204, before forming the anode structure in the initial anode opening, the method for manufacturing the display panel further includes: performing dry etching on each first mask structure to remove at least a portion of the sidewall of the first mask structure to form a target mask structure. The projection of the first surface of the target mask structure away from the first anode layer toward the substrate covers the projection of the second surface of the target mask structure close to the first anode layer toward the substrate.

[0097] Please refer to Figure 15. Before the anode structure 3 is formed in the initial anode opening K2, the second type of etching gas can be introduced into the initial anode opening K2. The etching barrier structure 6 is used to protect the first surface of the first mask structure 51 away from the first anode layer from being etched by the second type of etching gas. Since the second type of etching gas will gather between the spaced first mask structures 51 and on the side close to the substrate 1, and the fluidity of the etching gas between the first mask structures 51 and on the side close to the substrate 1 is poor, while the fluidity of the etching gas between the first mask structures 51 and away from the substrate 1 is good, the projection of the first surface of the target mask structure 52 away from the first anode layer 2 toward the substrate 1 finally formed covers the projection of the second surface of the target mask structure 52 close to the first anode layer 2 toward the substrate 1.

[0098] After dry etching is performed on each first mask structure to remove at least a portion of the sidewall of the first mask structure 51 to form a target mask structure 52 , each etching stop structure 6 can be removed.

[0099] In one embodiment, step S204, forming an anode structure in the initial anode opening, also includes: the step of forming an anode structure in the anode opening based on the target mask structure. Specifically, please refer to Figure 16, forming an anode structure based on the target mask structure and the anode opening includes steps S1601 to S1603.

[0100] S1601: forming a metal layer on a side of the target mask structure away from the substrate and in the initial anode opening.

[0101] Please refer to Figure 17. After removing the etching stop structure 6, a metal layer 30 can be formed on the side of the target mask structure 52 away from the substrate 1 and in the initial anode opening K2. During the metal deposition process, due to the metal deposition characteristics, the surface area of ​​the upper surface of the metal layer finally formed away from the substrate 1 will be smaller than the surface area of ​​the lower surface of the metal layer away from the substrate 1. Moreover, since the projection of the first surface of the target mask structure 52 away from the first anode layer 2 toward the substrate 1 covers the projection of the second surface of the target mask structure 52 close to the first anode layer 2 toward the substrate 1, the metal layer 30 above the target mask structure 52 and the metal layer 30 above the substrate 1 will not be bonded through the target mask structure 52, which is beneficial to the subsequent patterning of the metal layer 30. And because when the first anode layer 2 is etched in the aforementioned step, the etching gas will partially etch the side walls of the first anode layer 2 protected by the first mask structure 51, so that the metal layer 30 located in the initial anode opening K2 will not adhere to the remaining first anode layer 2, that is, an anode opening K3 can be formed between the metal layer 30 in the initial anode opening K2 and the remaining first anode layer 2.

[0102] S1602: forming a second mask layer on a side of the metal layer away from the substrate.

[0103] Please refer to FIG. 18 . In order to perform patterning on the metal layer 30 , it is first necessary to form a second mask layer 7 on a side of the metal layer 30 away from the substrate 1 . The second mask layer 7 may be a photoresist.

[0104] S1603: Patterning the second mask layer to form a plurality of second mask structures that are spaced apart.

[0105] Please refer to Figure 19. After the second mask layer 7 is formed, it is necessary to pattern the second mask layer 7, that is, perform photolithography and development on the second mask layer 7 to form a plurality of spaced second mask structures 71 so that each second mask structure 71 protects the metal layer 30 in the initial anode opening K2.

[0106] S1604: etching the metal layer based on a second mask structure arranged at multiple intervals to form an anode structure.

[0107] Please refer to FIG. 20 . After forming a plurality of second mask structures 71 disposed at intervals, the metal layer 30 may be etched to remove portions of the metal layer 30 that are not protected by the second mask structures 71 , thereby forming an anode structure 3 .

[0108] In one embodiment, in step S1604, after etching the metal layer based on a plurality of second mask structures spaced apart to form an anode structure, in step S205, before forming a cathode layer on the first anode layer and the side of the anode structure away from the substrate, the method for preparing the display panel also includes the step of removing each target mask structure and each second mask structure.

[0109] Please refer to Figure 21. After the anode structure 3 is formed, the second mask structure 71 on the anode structure 3 and the target mask structure 52 on the first anode layer 2 can be removed to facilitate the subsequent formation of the cathode layer 4 on the side of the first anode layer 2 and the anode structure 3 away from the substrate 1.

[0110] In one embodiment, in step S205 , before forming a cathode layer on the first anode layer and the anode structure on a side away from the substrate, the method for preparing a display panel further includes: forming a dielectric layer 8 in the anode opening K3 , wherein the cathode layer 4 covers the dielectric layer 8 .

[0111] Please refer to FIG. 22 . In the subsequent preparation process of the display panel, an acid etching process may be used. In the acid etching process, Ag (silver) in the first anode layer 2 and the anode structure 3 may be separated to form ions, and enter the display area of ​​the display panel with the etching solution to form dark spots, affecting the display effect of the display panel. In order to ensure that there are no dark spots in the display area of ​​the display panel, a dielectric layer 8 may be formed in the anode opening K3. The dielectric layer 8 may be an organic material so that the water vapor in the organic flat layer 19 can evaporate outward through the organic material.

[0112] In one embodiment, the width of the anode opening in the extension direction of the anode layer ranges from 0.1 um to 2.5 um.

[0113] Please continue to refer to FIG. 8 , the extension direction of the anode layer may include a first direction and a second direction, wherein the first direction is the X-axis direction, the second direction is the Y-axis direction, the first direction intersects with the second direction, and the anode layer includes a first anode layer 2 and an anode structure 3. Exemplarily, the width range of the anode opening K3 formed by the method for preparing the display panel of the present application in the first direction may be 0.1um~2.5um, and the width range in the second direction may not be limited. It can be understood that in the present application, by reducing the width of the anode opening K3 in the first direction, the size of the anode opening K3 can be reduced, and then the overall overlap area of ​​the anode layer and the cathode layer is reduced while ensuring that the number of anode openings K3 in the overlap area of ​​the anode layer and the cathode layer remains unchanged, and the effective overlap area of ​​the anode layer and the cathode layer remains unchanged, which is conducive to realizing a narrow frame design.

[0114] In a detailed embodiment, the manufacturing method of the display panel of the present application is as follows: first, a substrate is provided, and the substrate 1 may include a first flexible substrate 11, a barrier layer 12, a second flexible substrate 13, a buffer layer 14, a gate insulating layer 15, a capacitor insulating layer 16, an interlayer insulating layer 17, a metal layer 18 and an organic planar layer 19. The manufacturing process of the substrate specifically includes: forming a barrier layer 12 on one side of the first flexible substrate 11, forming a second flexible substrate 13 on a side of the barrier layer 12 away from the first flexible substrate 11, forming a buffer layer 14 on a side of the second flexible substrate 13 away from the first flexible substrate 11, forming a gate insulating layer 15 on a side of the buffer layer 14 away from the first flexible substrate 11, forming a capacitor insulating layer 16 on a side of the gate insulating layer 15 away from the first flexible substrate 11, forming an interlayer insulating layer 17 on a side of the capacitor insulating layer 16 away from the first flexible substrate 11, forming a metal layer 18 on a side of the interlayer insulating layer 17 away from the first flexible substrate 11, and forming an organic planar layer 19 on a side of the metal layer 18 away from the first flexible substrate 11.

[0115] Afterwards, the first anode layer 2 can be formed on the side of the organic flat layer 19 away from the first flexible substrate 11, the first mask layer 5 can be formed on the side of the first anode layer 2 away from the substrate 1, the first mask layer 5 can be patterned to form a plurality of first mask structures 51 spaced apart, and then an etching stop structure 6 can be formed on the side of each first mask structure 51 away from the substrate 1, and then the first anode layer 2 can be etched to remove the portion of the first anode layer 2 not protected by the first mask structure 51 to form an initial anode opening K2. By first forming an etching stop layer on the side of each first mask structure 51 away from the substrate 1 and the side of the first anode layer 2 away from the substrate 1, and then patterning the etching stop layer to form an etching stop structure 6, and then etching the first anode layer 2 based on the etching stop structure 6 and the first mask structure 51, since the first anode layer 2 is etched later, it can be ensured that there is no adhesion between the etching stop layer and the first anode layer 2 after the first anode layer 2 is etched, which is conducive to ensuring the display performance of the display panel.

[0116] After forming the initial anode opening K2, each first mask structure 51 can be dry-etched based on the etching stop structure 6 to remove at least part of the sidewalls of the first mask structure 51 to form a target mask structure 52. After forming the target mask structure 52, the etching stop structure 6 can be removed to form a metal layer 30 on the side of the target mask structure 52 away from the substrate 1 and in the initial anode opening K2. During the metal deposition process, due to the metal deposition characteristics, the surface area of ​​the upper surface of the metal layer finally formed away from the substrate 1 will be smaller than the surface area of ​​the lower surface of the metal layer away from the substrate 1. Moreover, since the projection of the first surface of the target mask structure 52 away from the first anode layer 2 toward the substrate 1 covers the projection of the second surface of the target mask structure 52 close to the first anode layer 2 toward the substrate 1, the metal layer 30 above the target mask structure 52 and the metal layer 30 above the substrate 1 will not be bonded through the target mask structure 52, which is beneficial to the subsequent patterning of the metal layer 30. After the metal layer 30 is formed, a second mask layer 7 may be formed on a side of the metal layer 30 away from the substrate 1, and the second mask layer 7 may be patterned to form a plurality of second mask structures 71 disposed at intervals, and the metal layer 30 may be etched based on the second mask structures 71 to remove portions of the metal layer 30 that are not protected by the second mask structures 71, thereby forming the anode structure 3. After the anode structure 3 is formed, the second mask structure 71 on the anode structure 3 and the target mask structure 52 on the first anode layer 2 may be removed.

[0117] Finally, a dielectric layer 8 may be formed in the anode opening K3 , and a cathode layer 4 may be formed on the first anode layer 2 , the anode structure 3 , and a side of the dielectric layer 8 away from the substrate 1 .

[0118] The display panel of the present application has a nanoscale anode opening K3 between the first anode layer 2 and the anode structure 3. Compared with the display panel in the related art, the display panel can reduce the overall overlapping area of ​​the first anode layer 2 and the anode structure 3 and the cathode layer while ensuring that the number of anode openings K3 in the overlapping area of ​​the first anode layer 2 and the anode structure 3 and the cathode layer remains unchanged, and the area of ​​the effective overlapping area of ​​the first anode layer 2 and the anode structure 3 and the cathode layer remains unchanged, which is conducive to achieving a narrow frame design.

[0119] It should be understood that, although the steps in the flowchart of the accompanying drawings are displayed in sequence as indicated by the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the accompanying drawings may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least a portion of the steps or stages in other steps.

[0120] In one embodiment, referring to FIG. 3 to FIG. 8 , the present application provides a display panel, which includes a substrate 1 , a first anode layer 2 , an anode structure 3 and a cathode layer 4 .

[0121] The first anode layer 2 is located on one side of the substrate 1, wherein the first anode layer 2 has an initial anode opening K2. The anode structure 3 is located in the initial anode opening K2, wherein an anode opening K3 is provided between the anode structure 3 and the first anode layer 2. The cathode layer 4 is located on a side of the first anode layer 2 and the anode structure 3 away from the substrate 1.

[0122] In one example, the substrate 1 may include a first flexible substrate 11 , a barrier layer 12 , a second flexible substrate 13 , a buffer layer 14 , a gate insulating layer 15 , a capacitor insulating layer 16 , an interlayer insulating layer 17 , a metal layer 18 and an organic planarizing layer 19 .

[0123] In the present embodiment, the display panel of the present application forms an anode structure 3 within the initial anode opening K2 of the first anode layer 2, so that an anode opening K3 is provided between the anode structure 3 and the first anode layer 2, so that the size of the anode opening K3 is relatively small. Therefore, compared with the display panel in the related art, the display panel of the present application can reduce the overall overlap area while ensuring that the overlap area between the anode layer and the cathode layer remains unchanged and the number of openings on the anode layer remains unchanged, which is conducive to the display panel to achieve a narrow frame design.

[0124] Based on the same inventive concept, an embodiment of the present application further provides a display device (not shown), the display device comprising a display panel prepared by a display panel preparation method as in any of the above embodiments, and the display device comprises the display panel in the above embodiments.

[0125] It can be understood that the display device in the embodiments of the present application can be an OLED display device, a QLED display device, electronic paper, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, a wearable device, an Internet of Things device, or any other product or component with a display function, and the embodiments disclosed in the present application are not limited to this.

[0126] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0127] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0128] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A method for preparing a display panel, characterized in that: The method comprises: providing a substrate; forming a first anode layer on one side of the substrate; forming an initial anode opening in the first anode layer; forming an anode structure in the initial anode opening; wherein an anode opening is provided between the anode structure and the remaining first anode layer; A cathode layer is formed on a side of the first anode layer and the anode structure away from the substrate.

2. The method for preparing a display panel according to claim 1, characterized in that: The forming of an initial anode opening in the anode layer comprises: forming a first mask layer on a side of the first anode layer away from the substrate; Patterning the first mask layer to form a plurality of first mask structures arranged at intervals; The first anode layer is etched based on the first mask structures arranged at intervals to form the initial anode opening.

3. The method for preparing a display panel according to claim 2, characterized in that: Before forming the anode structure in the initial anode opening, the method further comprises: Performing dry etching on each of the first mask structures to remove at least a portion of the sidewalls of the first mask structure to form a target mask structure; wherein a projection of a first surface of the target mask structure away from the first anode layer toward the substrate covers a projection of a second surface of the target mask structure close to the first anode layer toward the substrate; The forming of an anode structure in the initial anode opening comprises: The anode structure is formed in the anode opening based on the target mask structure.

4. The method for preparing a display panel according to claim 3, characterized in that: The forming of the anode structure based on the target mask structure and within the anode opening comprises: forming a metal layer on a side of the target mask structure away from the substrate and in the initial anode opening; forming a second mask layer on a side of the metal layer away from the substrate; Patterning the second mask layer to form a plurality of second mask structures that are spaced apart from each other; The metal layer is etched based on the second mask structures arranged at multiple intervals to form the anode structure.

5. The method for preparing a display panel according to claim 4, characterized in that: Before forming a cathode layer on the first anode layer and the anode structure on a side away from the substrate, the method further comprises: A removal process is performed on each of the target mask structures and each of the second mask structures.

6. The method for preparing a display panel according to claim 3, characterized in that: Before etching the first anode layer using the first mask structure arranged based on a plurality of intervals, the method further includes: forming an etching stop structure on a side of each of the first mask structures away from the substrate; After dry etching each of the first mask structures to remove at least a portion of the sidewalls of the first mask structures to form a target mask structure, the method further includes: Each of the etching stop structures is removed.

7. The method for preparing a display panel according to claim 1, characterized in that: Before forming a cathode layer on the first anode layer and the side of the anode structure away from the substrate, the method further comprises: A dielectric layer is formed in the anode opening; wherein the cathode layer covers the dielectric layer.

8. The method for preparing a display panel according to claim 1, characterized in that: The width of the anode opening in the extension direction of the anode layer ranges from 0.1 um to 2.5 um.

9. A display panel, characterized in that: The display panel comprises: substrate; A first anode layer, located on one side of the substrate, wherein the first anode layer has an initial anode opening; an anode structure located in the initial anode opening, wherein an anode opening is provided between the anode structure and the first anode layer; The cathode layer is located on a side of the first anode layer and the anode structure away from the substrate.

10. A display device, characterized in that: The display panel is prepared by the method for preparing the display panel according to any one of claims 1 to 9.

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