Light-emitting device and method for manufacturing light-emitting device

Abstract

The invention provides a light-emitting device and a method for manufacturing the light-emitting device. The light-emitting device according to the present invention comprises: a pixel region including a plurality of light-emitting elements; a peripheral region including an electrode terminal for establishing an electrical connection with an external terminal, a first insulating layer disposed on the electrode terminal, and a second insulating layer disposed on the first insulating layer, in which the electrode terminal includes a first metal layer exposed through a first opening provided in the first insulating layer, an upper surface of an end portion of the first insulating layer is inclined with respect to a bottom surface of the first metal layer, the upper surface of the end portion forms a part of a first opening, the second insulating layer has a second opening in the first opening, and the second insulating layer is in contact with the electrode terminal in the first opening.

Description

Technical Field

[0001] The present invention relates to a light emitting device and a method for manufacturing the light emitting device. Background Art

[0002] Since the organic EL element is a self-luminous element and exhibits a fast response time, does not require a backlight, and consumes little power, the organic EL element is replacing liquid crystal as a leader in color display devices. With the trend toward higher performance (towards higher definition, higher brightness, and higher color purity), the organic EL element is required to have higher reliability.

[0003] On the other hand, it is known that the organic compounds used as the light-emitting materials of organic EL elements have low moisture resistance, so moisture penetrating from the outside can cause black spots or current leakage. Therefore, technology to reduce the penetration of moisture into the interior of organic EL elements has been developed. As a structure for improving the sealing performance at the pad portion for external data output, Japanese Patent Publication No. 2018-73760 describes a structure in which deposition and etching are performed twice on an insulating film having different moisture permeability.

[0004] In the case of an organic EL (OLED) display device shown in Japanese Patent Laid-Open No. 2018-73760, deposition and etching are performed twice on an insulating film in order to suppress moisture penetration at a contact portion (bonding pad or ACF pad) with an external circuit. As a result, depending on the shape of the pad to be formed, the yield of the ACF connection may be reduced, thereby reducing the reliability of the pad. Summary of the invention

[0005] The present disclosure provides a light emitting device capable of improving reliability of a pad.

[0006] A light-emitting device comprises: a pixel region comprising a plurality of light-emitting elements; and a peripheral region comprising an electrode terminal for establishing an electrical connection with an external terminal, a first insulating layer arranged on the electrode terminal, and a second insulating layer arranged on the first insulating layer, wherein the electrode terminal comprises a first metal layer exposed through a first opening provided in the first insulating layer, an upper surface of an end portion of the first insulating layer is inclined relative to a bottom surface of the first metal layer, an upper surface of the end portion forms a part of the first opening, the second insulating layer has a second opening in the first opening, and the second insulating layer contacts the electrode terminal in the first opening.

[0007] A method for manufacturing a light-emitting device, the method comprising the following steps: forming a metal portion including a first metal layer; forming a first insulating layer on the metal portion; forming a first opening in the first insulating layer by isotropically etching the first insulating layer; forming a second insulating layer on the first insulating layer and the first metal layer; and forming a second opening in the second insulating layer by anisotropically etching the second insulating layer, thereby exposing the first metal layer at the second opening.

[0008] Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a general plan view of a light emitting device according to Embodiment 1;

[0010] Figure 2 yes Figure 1 The cross-sectional view at the tangent line A;

[0011] Figure 3 is a cross-sectional view of the pad portion in Example 1;

[0012] Figure 4 yes Figure 2 A cross-sectional view of the pad before opening;

[0013] Figure 5A is a diagram for illustrating a manufacturing process of a pad opening in Example 1;

[0014] Figure 5B is a diagram for illustrating a manufacturing process of a pad opening in Example 1;

[0015] Figure 5C is a diagram for illustrating a manufacturing process of a pad opening in Example 1;

[0016] Figure 5D is a diagram for illustrating a manufacturing process of a pad opening in Example 1;

[0017] Figure 5E is a diagram for illustrating a manufacturing process of a pad opening in Example 1;

[0018] Fig. 5F is a diagram for illustrating a manufacturing process of a pad opening in Example 1;

[0019] Figure 6 is a cross-sectional view of a pad opening of a light emitting device according to Example 2;

[0020] Fig. 7A is a diagram for illustrating a manufacturing process of a pad opening in Embodiment 2;

[0021] Figure 7B is a diagram for illustrating a manufacturing process of a pad opening in Embodiment 2;

[0022] Figure 7C is a diagram for illustrating a manufacturing process of a pad opening in Embodiment 2;

[0023] Fig.7D is a diagram for illustrating a manufacturing process of a pad opening in Embodiment 2;

[0024] Fig. 7E is a diagram for illustrating a manufacturing process of a pad opening in Embodiment 2;

[0025] Figure 7F is a diagram for illustrating a manufacturing process of a pad opening in Embodiment 2;

[0026] Fig. 8A is a diagram for illustrating a pixel structure of a display device according to Embodiment 3;

[0027] Figure 8B is a diagram for illustrating a pixel structure of a display device according to Embodiment 3;

[0028] Fig. 9 is a schematic diagram showing an example of a display device according to an embodiment;

[0029] Fig. 10A is a schematic diagram showing an example of an image pickup device according to an embodiment;

[0030] Fig. 10B is a schematic diagram showing an example of electronic equipment according to an embodiment;

[0031] Fig.11A is a schematic diagram showing an example of a display device according to an embodiment;

[0032] Fig. 11B is a schematic diagram showing an example of a display device according to an embodiment;

[0033] Fig. 12A is a schematic diagram showing an example of a lighting device according to an embodiment;

[0034] Fig. 12B is a schematic diagram showing an example of a lighting device according to an embodiment;

[0035] Fig.13A is a schematic diagram showing an example of a wearable device according to an embodiment;

[0036] Fig. 13Bis a schematic diagram showing an example of a wearable device according to an embodiment;

[0037] Fig.14A is a schematic diagram of an image forming apparatus according to an embodiment;

[0038] Fig. 14B is a schematic diagram of an image forming apparatus according to one embodiment; and

[0039] Fig. 14C is a schematic diagram of an image forming apparatus according to an embodiment. DETAILED DESCRIPTION

[0040] Hereinafter, with reference to the accompanying drawings, an embodiment for implementing the present invention will be described. Incidentally, in the following description and the accompanying drawings, common structures in a plurality of drawings are given common reference numerals. Therefore, the common structures will be described by cross-referencing a plurality of drawings, and the description of the structures given common reference numerals will be appropriately omitted.

[0041] Example 1

[0042] Figure 1 is a plan view of an organic EL display device 100 to which the present invention is applied, Figure 2 1 is a cross-sectional view of the display device 100 at the cut line A. The display device 100 has a pixel array (pixel region) 110 and a pad configuration region 120. Pixels including a plurality of light-emitting elements are configured at the pixel array 110. Pads (electrode terminals) for electrically connecting the pixels of the display device 100 to external terminals are configured at the pad configuration region 120. The pad configuration region 120 is also referred to as a peripheral region. The pixel array 110 and the pad configuration region 120 are configured on a silicon substrate 200.

[0043] The pixel array 110 has a plurality of organic light emitting layers 212 and a plurality of transistors 201 and wiring layers 203, 205, and 207 for driving them. The wiring layers are connected by plugs 204, 206, and 208. In addition, the pixel array 110 has a plug 202 for connecting the wiring layer 203 to the silicon substrate 200. An insulating layer 209 is disposed between the wiring layers 203, 205, and 207 and the plugs 202, 204, 206, and 208.

[0044] For example, the silicon substrate 200 is a single crystal silicon layer having a thickness of 750 μm to 800 μm, preferably 770 μm to 780 μm.

[0045] The pixel array 110 includes an upper electrode 213 and a lower electrode 210, which are used to apply voltage to the organic light-emitting layer 212 above and below the organic light-emitting layer 212, respectively. The lower electrode 210 is connected to the wiring layer 207 through a plug 208. A sealing layer 214 for ensuring life is configured on the organic light-emitting layer 212. The sealing layer 214 can be arbitrarily selected from materials commonly used in semiconductor devices. For example, a silicon nitride film, which is a light-transmitting and dense film, is used as a material for the sealing layer 214. In addition, the sealing layer 214 has a three-layer structure in which an oxide film layer is sandwiched between insulating layers. Specifically, the sealing layer 214 includes a first sealing layer 215, a second sealing layer 216, and a third sealing layer 217. For example, the first sealing layer 215 and the third sealing layer 217 are both silicon nitride films (SiN) deposited by a plasma CVD (chemical vapor deposition) method. For the second sealing layer 216, an aluminum oxide film (Al2O3) deposited using an ALD method may be used.

[0046] The transistor 201 may be formed by a known semiconductor process technology. The contact plug 202 may include a high melting point metal such as tungsten. The wiring layers 203, 205, and 207 may each have a structure formed by an aluminum wire and a tungsten plug. However, a copper material may be used. The insulating layer 209 may include a silicon-type insulating film such as a silicon oxide film, a silicon nitride film, or a silicon carbide film. In addition, a Low-k material having a low dielectric constant may be included therein.

[0047] In order to electrically connect the display device 100 to the outside, a pad opening 218 is configured in the pad configuration area 120, and a pad electrode 121 is configured at the bottom of the pad opening 218. For the pad electrode 121, a metal material such as aluminum is used. The pad electrode 121 is constructed by exposing the metal layer through the pad opening 218. In the present embodiment, the pad electrode 121 is formed simultaneously with the wiring layer 207. In other words, the pad electrode 121 and the wiring layer 207 have roughly the same film structure and film thickness. However, when the pad opening 218 is formed, the film thickness at the pad opening 218 portion of the pad electrode 121 can be smaller than the film thickness outside the opening.

[0048] Figure 3 The cross-sectional view of the pad portion is shown in an enlarged scale. The second metal layer 302 is disposed at the upper layer of the pad electrode 121 (first metal layer). The second metal layer 302 is also called a barrier metal, and for example, titanium or titanium nitride may be used.

[0049] On the second metal layer 302, an insulating layer 209, i.e., a first insulating layer, is disposed. On the first insulating layer, a sealing layer 214, i.e., a second insulating layer, is disposed. Incidentally, in the present disclosure, the configuration in which the second insulating layer is disposed on the first insulating layer includes a case in which the second insulating layer is configured to be in contact with the first insulating layer and a case in which the first insulating layer and the second insulating layer are configured so that one or more third insulating layers may be included between the first insulating layer and the second insulating layer.

[0050] For example, for the insulating layer 209, a silicon oxide film deposited using a plasma CVD method can be used. The upper surface of the insulating layer 209 is in a shape that is inclined relative to the pad electrode 121 at the end on the side of the pad opening 218. The inclination of the insulating layer 209 is an inclination that makes the film thickness thinner as the insulating layer 209 is closer to the pad opening 218. In addition, the insulating layer 209 is configured to be away from the pad opening 218, and the insulating layer 209 is not adjacent to the pad opening 218. Here, the inclination angle of the insulating layer 209 surface relative to the pad electrode 121 is referred to as θ. By forming an opening by isotropic etching relative to the insulating layer 209, an inclined shape including at the end of the insulating layer 209 can be formed. The inclination angle θ can be controlled to a certain extent according to the processing conditions for isotropic etching. In addition, according to the processing conditions of isotropic etching, the inclination can be in the shape of a curved surface rather than a plane.

[0051] The sealing layer 214 is arranged on the insulating layer 209. The sealing layer 214 extends from the pixel array 110 and includes three layers, the first sealing layer 215, the second sealing layer 216, and the third sealing layer 217, in the same manner as the portion of the pixel array 110. The sealing layer 214 has a shape having a portion inclined relative to the pad electrode 121 near the pad opening 218. The sealing layer 214 has such a shape because it is deposited on the inclination of the insulating layer 209. Here, the inclination angle of the surface of the sealing layer 214 relative to the pad electrode 121 is referred to as θ'. In addition, in the region adjacent to the pad opening 218, the upper surface of the sealing layer 214 is not inclined and is parallel to the pad electrode 121. In addition, in this region (in the first opening described later), the insulating layer 209 is not arranged between the sealing layer 214 and the second metal layer 302, and the sealing layer 214 is configured to contact the top of the second metal layer 302.

[0052] The side surfaces (inclined surfaces) of the pad opening 218 of the insulating layer 209 are covered with the sealing layer 214, and the insulating layer 209 is not exposed. By reducing moisture penetration through the insulating layer 209, degradation of the light emitting layer 212 can be prevented, and defects such as poor light emission can be reduced.

[0053] The inclination angle θ of the insulating layer 209 is preferably set to at least 20 degrees and not more than 50 degrees. This is because when the insulating layer 209 is inclined as described above, the possibility of voids occurring when the sealing layer 214 is deposited is low. If a void occurs, the target site becomes a moisture penetration path, and the light-emitting layer deteriorates, resulting in the occurrence of defects such as poor light emission. Therefore, in the present disclosure, the inclination of the insulating layer 209 is slowed down, thereby reducing concerns about the occurrence of voids in the sealing layer 214. However, when the inclination of the insulating layer 209 is made too small, the size of the pad opening 218 will increase undesirably. Thus, by setting the inclination angle θ of the insulating layer 209 to at least 20 degrees and not more than 50 degrees, the suppression of voids and the miniaturization of the pad opening 218 can be combined.

[0054] The insulating layer 209 is inclined. Therefore, the same inclination is also caused when the upper sealing layer 214 is formed. When an anisotropic conductive film (ACF) is used during installation, the formation of this shape is conducive to the conductive particles entering the pad opening 218 during bonding. This can provide an effect of improving the yield. However, when the inclination is made too small, the size of the pad opening 218 will increase undesirably. By setting the inclination angle θ' of the sealing layer 214 to at least 20 degrees and not more than 50 degrees, the improvement in yield can be combined with the miniaturization of the pad opening 218. The inclination angle θ' can be the same angle as the inclination angle θ, or it can be an angle different from the inclination angle θ.

[0055] The sidewall of the pad opening 218 includes the exposed sealing layer 214 and the second metal layer 302, and the pad electrode 121 is configured at the bottom surface of the pad opening 218. The insulating layer 209 is configured to retreat from the pad opening 218, so that the insulating layer 209 will not be exposed at the sidewall of the pad opening 218. The pad opening 218 is formed relative to the sealing layer 214 using anisotropic etching. In this step, the second metal layer 302 acts as an etching stop layer. Even when the film thickness of the sealing layer 214 varies, the etching amount of the pad electrode 121 can be minimized. The pad electrode 121 is cut off by etching. Therefore, the pad electrode 121 has a recess at a portion of the pad opening 218 and is thinner than the portion outside the pad opening 218. The depth T1 of the recess is, for example, at least 1 nm and not more than 100 nm.

[0056] This structure can suppress over-etching of the pad electrode 121, which can minimize corrosion of the pad due to moisture intrusion in a mounting step in a subsequent step. As a result, degradation of reliability of the pad can be suppressed.

[0057] Below, refer to Figure 4 as well as FIG. 5A to FIG. 5F, a method of manufacturing the display device 100 of the present disclosure will be described. Each figure shows a cross-sectional view of at least one step until a pad opening 218 for connecting the pad electrode 121 to the outside is formed.

[0058] Figure 4 is a diagram showing a cross-sectional structure before the pad is opened. Figure 1 In the structure shown, the pixel array 110 has been formed to the lower electrode 210 and the insulating layer 211, and the pad configuration area 120 has been formed to the insulating layer 209. Figure 4 The manufacturing steps of the manufacturing method can be completed by conventional and general methods.

[0059] FIG. 5A to FIG. 5F are used to illustrate the processing flow of pad openings, and are Figure 1 or Figure 4 FIG. 1 is an enlarged scale view of the pad configuration area 120 . Figure 4 and Figure 5A It is a figure which shows the state after the same step.

[0060] First, if Figure 5A As shown, on the pad electrode 121, a second metal layer 302 is configured, and an insulating layer 209 is deposited at the upper layer of the second metal layer 302. These are formed simultaneously with the pixel array 110. The pad electrode 121 includes a metal portion of a material including, for example, 5 wt% copper (Cu) based on the amount of aluminum (Al). The second metal layer 302 includes a metal portion such as titanium nitride (TiN). In addition, a barrier metal 301 can be configured under the pad electrode 121. For the barrier metal 301, for example, titanium (Ti) or titanium nitride (TiN) is used. For the insulating layer 209, for example, a silicon oxide film (SiO) deposited by a plasma CVD method is used.

[0061] Pad opening boundary 218a indicates the location of pad opening 218 provided in a later step.

[0062] Then, if Figure 5B As shown, the insulating layer 209 is etched using a photolithography method, and thus a photoresist 501 is formed as a protective film for forming an opening (which is referred to as a first opening). The photoresist 501 has an opening at a position retreated from the pad opening boundary 218a.

[0063] Then, if Figure 5CAs shown, an opening (first opening) is formed in the insulating layer 209 by isotropic etching. The insulating layer 209 is made to have a shape inclined relative to the pad electrode 121 at the end on the side where the first opening is located by isotropic etching. For example, by using wet etching using buffered hydrofluoric acid for isotropic etching, the second metal layer 302 that can prevent the pad electrode 121 from being exposed can be easily left. Isotropic dry etching can be used as long as the second metal layer 302 can be left. The photoresist 501 has an opening at a position retreated from the pad opening boundary 218a. Therefore, the opening (first opening) of the insulating layer 209 is formed to retreat from the pad opening boundary 218a. After the opening (first opening) in the insulating layer 209 is formed, the photoresist 501 is removed.

[0064] Then, if Figure 5D As shown, a sealing layer 214 is deposited at the upper layer of the insulating layer 209 and the opening (first opening) of the insulating layer 209. The sealing layer 214 is also deposited at the pixel array 110 at the same time. The sealing layer 214 is, for example, a silicon nitride film deposited by a plasma CVD method, and includes three layers, the three layers including an aluminum oxide film (Al2O3) deposited between two layers by an ALD (atomic layer deposition) method. By adopting a film having a moisture permeability lower than that of the insulating layer 209, the sealing layer 214 can act as a barrier film for external moisture. In addition, the presence of an inclination at the end of the insulating layer 209 can reduce the worry of voids occurring in the deposition of the sealing layer 214. In addition, the sealing layer 214 is also deposited at the same inclination along the inclination at the opening of the insulating layer 209. As a result, for example, when an anisotropic conductive film (ACF) is bonded, conductive particles become easier to enter the pad opening 218, which can also provide an effect of improving the yield.

[0065] Then, if Figure 5E As shown, a photoresist 502 is formed on the top of the sealing layer 214 using a photolithography method. The photoresist 502 acts as a protective film for etching the sealing layer 214 and forming an opening (which is referred to as a second opening). The opening of the photoresist 502 is considered to have a configuration roughly consistent with the opening of the pad opening boundary 218a.

[0066] Then, if Fig. 5FAs shown, an opening (second opening) is formed in the sealing layer 214 by anisotropic etching, and the second metal layer 302 is removed to expose the pad electrode 121. For anisotropic etching, plasma etching (RIE) of C4F8 or CF4 type gas can be used, for example. In this step, the insulating layer 209 is formed to retreat from the pad opening 218. This results in a structure in which the sidewalls of the pad opening 218 are covered with the sealing layer 214. This structure can reduce the moisture penetration that takes the pad opening 218 to the portion of the insulating layer 209 as a path, which can reduce the degradation of the light-emitting layer 212 and can reduce defects such as poor light emission. Subsequently, the photoresist 502 is removed, resulting in the completion of the pad opening 218.

[0067] Compared to the conventional technique in which the pad electrode 121 is exposed at the opening by etching twice the insulating layer 209 and the sealing layer 214, in the present embodiment, exposure is achieved by etching the sealing layer 214 only once. Therefore, a reduction in the etching amount (depth T1 of the recess) of the pad electrode 121 can be achieved. As a result, high reliability can be obtained with respect to corrosion of the pad electrode 121 due to, for example, long-term immersion in water in a cutting step of a mounting process.

[0068] Example 2

[0069] Figure 6 2 is a cross-sectional view of the second embodiment. The difference from the first embodiment is that the inclination of the insulating layer 209 includes 2 steps, and the sealing layer 214 deposited on the upper layer of the insulating layer 209 also has a shape with the same inclination. The insulating layer 209 has a first inclined portion in which the upper surface is inclined relative to the pad electrode 121, a parallel portion in which the upper surface is parallel to the pad electrode 121, and a second inclined portion in which the upper surface is inclined relative to the pad electrode 121. The inclination of the insulating layer 209 including 2 steps can further reduce the worry of voids occurring in the sealing layer 214 at the step portion. In addition, when an anisotropic conductive film (ACF) is used during installation, the inclination of the sealing layer 214 including 2 steps makes it easier for charged particles to enter the pad opening during bonding. This can provide an effect of improving the yield rate. Although the present embodiment shows an example in which all the inclination angles of the insulating layer 209 are θ, the inclination angle can also be changed.

[0070] Reference 7A to 7F , a forming method of the second embodiment will be shown.

[0071] First, if Fig. 7A As shown, the second metal layer 302 is disposed on the pad electrode 121 , and the insulating layer 209 is deposited at an upper layer of the second metal layer 302 .

[0072] Then, if Figure 7BAs shown, a photoresist 501 is formed as a protective film for etching the insulating layer 209 using a photolithography method. The photoresist 501 has an opening at a position retreated from the pad opening boundary 218a. Here, the end of the opening of the photoresist 501 is referred to as a photoresist opening boundary 501a. The process so far is the same as that of the first embodiment.

[0073] Then, if Figure 7C As shown, the insulating layer 209 is subjected to isotropic etching. The difference from the first embodiment is that the etching is stopped at the midpoint of the insulating layer 209. The process using isotropic etching results in the insulating layer 209 having a shape having an inclination angle θ relative to the pad electrode 121. After etching the insulating layer 209, the photoresist 501 is removed.

[0074] Then, if Fig.7D As shown, a photoresist 503 is formed as a protective film for further etching the insulating layer 209 and forming an opening using a photolithography method. Here, the end of the opening of the photoresist 503 is referred to as a photoresist opening boundary 503a. The photoresist opening boundary 503a is characterized by being located between the pad opening boundary 218a and the photoresist opening boundary 501a.

[0075] Then, if Fig. 7E As shown, the insulating layer 209 is further subjected to isotropic etching to form an opening. The photoresist opening boundary 503a is located between the pad opening boundary 218a and the photoresist opening boundary 501a. Figure 7C A portion having an inclination angle θ is formed inside the inclined portion formed in the process. By performing this process, a structure in which the inclination of the insulating layer 209 includes two steps can be manufactured. This embodiment shows a case where two isotropic etchings are performed under the same conditions so that the inclination angles of the two steps are equal to each other. However, by using different conditions, the inclination angles of the two steps can also be set to be different to a certain extent. In addition, by increasing the number of isotropic etchings, an inclination of three steps or more steps can also be provided.

[0076] Then, if Figure 7F As shown, a sealing layer 214 is deposited on the upper layer of the insulating layer 209 and on the opening of the insulating layer 209. The insulating layer 209 has a two-step inclination. Therefore, two steps are also formed at the sealing layer 214. Here, the inclination angle of the sealing layer 214 is referred to as θ'.

[0077] From this point on, the pad opening 218 is formed in the same manner as in the first embodiment.

[0078] This manufacturing method can form the same structure as that of the second embodiment.

[0079] Example 3

[0080] Another embodiment of an organic EL device having the same sealing structure of a pad opening as that of the embodiment will be described.

[0081] Structure of organic EL light-emitting element

[0082] An organic EL light emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarization layer may be provided between the color filter and the protective layer. The planarization layer may include an acrylic resin, etc. The same also applies to the case where a planarization layer is provided between the color filter and the microlens.

[0083] substrate

[0084] As the substrate, quartz, glass, silicon wafer, resin, metal, etc. can be exemplified. In addition, on the substrate, switching elements such as transistors and wiring can be arranged, and an insulating layer can be arranged thereon. For the insulating layer, any material is acceptable as long as a contact hole can be formed so that the wiring can be formed between the insulating layer and the first electrode, and as long as insulation from the wiring that is not connected can be ensured. For example, a resin such as polyimide, silicon oxide, or silicon nitride can be used.

[0085] electrode

[0086] For the electrode, a pair of electrodes can be used. The pair of electrodes can be an anode and a cathode. When an electric field is applied along the light emission direction of the organic light emitting element, the electrode with a higher potential is the anode, and the other is the cathode. Alternatively, it can also be said that the electrode that supplies holes to the light emitting layer is the anode, and the electrode for supplying electrons is the cathode.

[0087] The constituent material for the anode desirably has a work function as large as possible. For example, a metal single substance such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium or tungsten, a mixture of the metals, or an alloy of the combination of the metals can be used. In addition, metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO) and indium zinc oxide can be used. In addition, conductive polymers such as polyaniline, polypyrrole and polythiophene can be used.

[0088] The electrode material may be used alone or in combination of two or more thereof. In addition, the anode may be formed of a single layer or a plurality of layers.

[0089] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten or molybdenum, or an alloy thereof, or a laminate thereof can be used. The material can also function as a reflective film without having the function of an electrode. However, when used as a transparent electrode, an oxide transparent conductive layer of indium tin oxide (ITO), indium zinc oxide, etc. or other materials can be used. However, the present invention is not limited thereto. For the formation of the electrode, photolithography can be used.

[0090] On the other hand, the constituent material for the cathode desirably has a small work function. Examples thereof may include alkali metals such as lithium, alkaline earth metals such as calcium, metal single substances such as aluminum, titanium, manganese, silver, lead or chromium, or mixtures of these substances. Alternatively, alloys of combinations of metal single substances may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper or zinc-silver may be used. Metal oxides such as indium tin oxide (ITO) may also be used. The electrode material may be used alone or in combination of two or more thereof. In addition, the cathode may be formed of a single layer or of multiple layers. Among these substances, silver is preferably used. In order to reduce the aggregation of silver, silver alloys are further preferred. When the aggregation of silver can be reduced, the ratio of the alloy is not important. For example, silver: other metals may be 1:1, 3:1, etc.

[0091] The cathode may be a top emission element using an oxide conductive layer such as ITO, or may be a bottom emission element using a reflective electrode such as aluminum (Al), and there is no particular limitation. There is no particular limitation on the method for forming the cathode. It is more preferred to use a DC or AC sputtering method, because the coverage of the film is good and the resistance tends to be reduced.

[0092] Pixel isolation layer

[0093] The pixel isolation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed using a chemical vapor deposition method (CVD method). In order to increase the resistance of the organic compound layer in the in-plane direction, the organic compound layer, especially the hole transport layer, is preferably deposited on the side wall of the pixel isolation layer in a thinning manner. Specifically, by increasing the taper angle of the side wall of the pixel isolation layer and the film thickness of the pixel isolation layer, and increasing the vignetting during vacuum evaporation, the deposition of a thin film thickness of the side wall can be achieved.

[0094] On the other hand, the pixel isolation layer is preferably adjusted in terms of the taper angle of the side wall of the pixel isolation layer or the film thickness of the pixel isolation layer to prevent the formation of voids in the protective layer to be formed thereon. No voids are formed in the protective layer. Therefore, the occurrence of defects in the protective layer can be reduced. The occurrence of defects in the protective layer is reduced. Therefore, the reduction in reliability due to the occurrence of black spots or poor conductivity of the second electrode can be reduced.

[0095] According to this embodiment, even when the taper angle of the side wall of the pixel isolation layer is not steep, it becomes possible to effectively suppress the leakage of charge to adjacent pixels. The results of this study have shown that the reduction can be fully achieved with a taper angle within a range of at least 60 degrees and not more than 90 degrees. The film thickness of the pixel isolation layer is desirably at least 10 nm and not more than 150 nm. In addition, even a construction that only includes a pixel electrode without a pixel isolation layer can provide the same effect. However, in this case, because the short circuit of the organic light-emitting element can be reduced, the film thickness of the pixel electrode is preferably set to half the thickness of the organic layer or less, or the pixel electrode end is set to a forward tapered shape of less than 60°.

[0096] Organic compound layer

[0097] The organic compound layer may be formed of a single layer or may be formed of a plurality of layers. When the organic compound layer has a plurality of layers, it may be referred to as a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer or an electron injection layer according to its function. The organic compound layer mainly includes an organic compound and may also include an inorganic atom or an inorganic compound. The organic compound may have, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum or zinc. The organic compound layer may be arranged between the first electrode and the second electrode, and may be arranged to contact the first electrode and the second electrode.

[0098] When the organic compound layer has a plurality of light-emitting layers, the organic compound layer may have a charge generation unit between the first light-emitting layer and the second light-emitting layer. The charge generation unit may have an organic compound having a minimum unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same also applies to the case where the charge generation unit is included between the second light-emitting layer and the third light-emitting layer.

[0099] Protective layer

[0100] A protective layer may be provided on the second electrode. For example, by bonding glass having a moisture absorbent to the second electrode, the penetration of water or the like relative to the organic compound layer may be reduced, and the occurrence of poor display may be reduced. Alternatively, as another embodiment, a passivation film of silicon nitride or the like may be provided on the cathode, thereby reducing the penetration of water or the like relative to the organic compound layer. For example, the following is also acceptable: a cathode is formed, and then the cathode is transported to another chamber without breaking the vacuum, and a silicon nitride film having a thickness of 2 μm is formed by a CVD method, thereby resulting in a protective layer. After deposition using the CVD method, a protective layer using an atomic layer deposition method (ALD method) may be provided. The film material of the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed on the film formed using the ALD method using the CVD method. The film formed by the ALD method may have a film thickness that is smaller than the film thickness of the film formed by the CVD method. Specifically, the film thickness may be 50% or less, and may further be 10% or less.

[0101] Color Filters

[0102] A color filter may be provided on the protective layer. For example, a color filter that takes into account the size of the organic light emitting element may be provided on another substrate. The substrate and the substrate provided with the organic light emitting element may be bonded to each other, or a color filter may be patterned on the protective layer shown above using photolithography. The color filter may include a high molecular weight compound.

[0103] Planarization layer

[0104] A planarization layer may be included between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the bottom layer. Without limiting the purpose, the planarization layer may be referred to as a material resin layer. The planarization layer may include an organic compound, which may be a low molecular weight compound or a high molecular weight compound, and preferably a high molecular weight compound.

[0105] The planarization layer can be arranged above and below the color filter, and its constituent materials can be the same or different. Specifically, polyvinyl alcohol carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc. can be exemplified.

[0106] Microlens

[0107] The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may include an acrylic resin, an epoxy resin, etc. The microlens may have the purpose of increasing the amount of light to be extracted from the organic light-emitting device and controlling the direction of the light to be extracted. The microlens may be hemispherical. When the microlens is hemispherical, the tangent in contact with the hemisphere includes a tangent parallel to the insulating layer. The contact point between the tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can also be determined in the same manner in a given cross-sectional view. In other words, the tangent in contact with the semicircle of the microlens in the cross-sectional view includes a tangent parallel to the insulating layer. The contact point between the tangent and the semicircle is the vertex of the microlens.

[0108] In addition, the midpoint of the microlens may also be defined. In a cross-sectional view of the microlens, assuming a line segment from a point where an arc shape ends to a point where another arc shape ends, the midpoint of the line segment may be referred to as the midpoint of the microlens. The section used to distinguish between the vertex and the midpoint may be a section perpendicular to the insulating layer.

[0109] The microlens has a first surface and a second surface opposite to the first surface, the first surface having a convex portion. The second surface is preferably configured to be closer to the functional layer side than the first surface. In order to present such a configuration, it is necessary to form a microlens on the light-emitting device. When the functional layer is an organic layer, it is preferred to avoid processes involving high temperatures during the manufacturing process. In addition, when the second surface is configured to be closer to the functional layer side than the first surface, the glass transition temperatures of the organic compounds constituting the organic layer are all preferably 100°C or higher, and more preferably 130°C or higher.

[0110] Opposite substrate

[0111] On the planarization layer, a counter substrate may be included. The counter substrate is disposed at a position corresponding to the aforementioned substrate, and is therefore referred to as a counter substrate. The constituent material for the counter substrate may be the same as the constituent material of the substrate. When the aforementioned substrate is considered to be the first substrate, the counter substrate may be the second substrate.

[0112] Organic layer

[0113] Organic compound layers (such as a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer) configuring the organic light emitting element according to the present embodiment are formed in the following manner.

[0114] The organic compound layer of the organic light-emitting element according to the present embodiment can be constructed using dry processes such as vacuum evaporation method, ionization evaporation method, sputtering and plasma. Alternatively, instead of the dry process, a wet process can be used to form a layer by dissolving in an appropriate solvent and a known coating method (e.g., spin coating, dipping, casting method, LB method, inkjet method, etc.).

[0115] Here, when the layer is formed by a vacuum evaporation method, a solution coating method, etc., crystallization is less likely to occur, and the time stability is excellent. In addition, in the case of deposition by a coating method, the layer can also be formed by combination with an appropriate binder resin.

[0116] As the binder resin, there may be mentioned polyvinyl alcohol carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, urea resin, etc. However, the present invention is not limited thereto.

[0117] In addition, the binder resin may be used alone as a homopolymer or a copolymer, or two or more thereof may be used in combination. In addition, if necessary, known additives such as a plasticizer, an antioxidant, and an ultraviolet absorber may be used in combination.

[0118] Pixel Circuit

[0119] The light emitting device may have a pixel circuit connected to the light emitting element. The pixel circuit may be an active matrix type that independently controls the light emission of the first light emitting element and the second light emitting element. The active matrix type circuit may be used for voltage programming or current programming. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light emitting element, a transistor for controlling the light emission brightness of the light emitting element, a transistor for controlling the light emission timing, a capacitor for maintaining the gate voltage of the transistor for controlling the light emission brightness, and a transistor for establishing a connection to GND without via the light emitting element.

[0120] The light emitting device has a display area and a peripheral area arranged around the display area. The display area includes a pixel circuit, and the peripheral area includes a display control circuit. The mobility of the transistor constituting the pixel circuit may be smaller than the mobility of the transistor constituting the display control circuit.

[0121] The slope of the current-voltage characteristic of the transistor configuring the pixel circuit may be smaller than the slope of the current-voltage characteristic of the transistor configuring the display control circuit. The slope of the current-voltage characteristic may be measured by the so-called Vg-Ig characteristic.

[0122] The transistor configuring the pixel circuit is a transistor connected to a light emitting element such as the first light emitting element.

[0123] Pixel

[0124] The organic light-emitting device has a plurality of pixels. Each of these pixels has sub-pixels for emitting different colors from each other. The sub-pixels may have respective emission colors such as RGB.

[0125] In the pixel, an area called a pixel opening emits light. This area is the same as the first area. The pixel opening may have a size of 15 μm or less, and may have a size of 5 μm or more. More specifically, the pixel opening may have a size of 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0126] The distance between sub-pixels may be 10 μm or less, specifically, 8 μm, 7.4 μm, or 6.4 μm.

[0127] The pixel can present a known configuration in a plan view. For example, a stripe configuration, a delta configuration, a PenTile configuration or a Bayer configuration can be accepted. The shape of the sub-pixel in a plan view can present any known shape. Examples thereof include quadrilaterals such as rectangles or rhombuses, and hexagons. Naturally, it should be understood that a rectangle includes not only precise graphics but also shapes that are close to rectangles. The shape of the sub-pixel and the pixel array can be used in combination.

[0128] Application of the organic EL light emitting element according to this embodiment

[0129] The organic EL light-emitting element according to the present embodiment can be used as a component for a display device or a lighting device. In addition, the organic EL light-emitting element has uses such as an exposure light source of an image forming device of an electronic photographic system, a backlight of a liquid crystal display device, a light-emitting device having a color filter for a white light source, and the like.

[0130] The display device may be an image information processing device having an image input section for inputting image information from an area CCD, a linear CCD, a memory card, etc., and having an information processing section for processing the input information, and for displaying the input image at a display section.

[0131] In addition, the display unit included in the camera device or inkjet printer may have a touch panel function. The driving system of the touch panel function may be an infrared system, an electrostatic capacitance system, a resistance film system, or an electromagnetic induction system, and there is no particular limitation. In addition, the display device may be used for the display unit of a multifunction printer.

[0132] Next, with reference to the drawings, a display device according to the present embodiment will be described.

[0133] Fig. 8A and Figure 8B Each is a cross-sectional schematic diagram showing an example of a display device having an organic light emitting element and a transistor connected to the organic light emitting element. The transistor is an example of an active element. The transistor may be a thin film transistor (TFT).

[0134] Fig. 8AIt is an example of a pixel, that is, a constituent element of the display device according to the present embodiment. The pixel has a sub-pixel 10. The sub-pixel 10 is divided into 10R, 10G, and 10B according to the light emission. The light emission color can be distinguished by the wavelength of the light emitted from the light-emitting layer, or the light emitted from the sub-pixel 10 can be subjected to selective transmission or color conversion through a color filter or the like. Each sub-pixel 10 has a reflective electrode 2 (that is, a first electrode on the interlayer insulating layer 1), an insulating layer 3 covering the end of the reflective electrode 2, an organic compound layer 4 covering the first electrode and the insulating layer, a second electrode 5, a protective layer 6, and a color filter 7.

[0135] A transistor and a capacitor may be provided under or inside the interlayer insulating layer 1. The transistor and the first electrode may be electrically connected to each other via a contact hole or the like not shown.

[0136] The insulating layer 3 is also called a bank or a pixel isolation film. The insulating layer 3 covers the end of the first electrode and is configured to surround the first electrode. The portion where the insulating layer 3 is not configured is in contact with the organic compound layer 4 and serves as a light emitting region.

[0137] The organic compound layer 4 includes a hole injection layer 41 , a hole transport layer 42 , a first light emitting layer 43 , a second light emitting layer 44 , and an electron transport layer 45 .

[0138] The second electrode 5 may be a transparent electrode, a reflective electrode or a semi-transmissive electrode.

[0139] The protective layer 6 reduces the penetration of moisture into the organic compound layer 4. The protective layer 6 is shown as a single layer, but may be a plurality of layers. The inorganic compound layer and the organic compound layer may exist layer by layer.

[0140] The color filter 7 is divided into 7R, 7G and 7B according to the color. The color filter 7 can be formed on a planarization film not shown. In addition, a resin protective layer not shown can be included on the color filter 7. In addition, the color filter 7 can be formed on the protective layer 6. Alternatively, the color filter 7 can be set on a counter substrate such as a glass substrate and then combined.

[0141] for Figure 8B For the display device 100 of FIG. 1 , an organic light emitting element 26 and a TFT 18 as an example of a transistor are described. A substrate 11 of glass, silicon, or the like and an insulating layer 12 on the substrate 11 are provided. On the insulating layer 12, an active element 18 such as a TFT is provided, and a gate electrode 13, a gate insulating film 14, and a semiconductor layer 15 of the active element are provided. The TFT 18 further includes the semiconductor layer 15, a drain electrode 16, and a source electrode 17. On top of the TFT 18, an insulating film 19 is provided. An anode 21 (which constitutes the organic light emitting element 26) and the source electrode 17 are connected to each other via a contact hole 20 provided in the insulating film 19.

[0142] Incidentally, the system of electrical connection between the electrode (anode or cathode) included in the organic light emitting element 26 and the electrode (source electrode or drain electrode) included in the TFT is not limited to Figure 8B In other words, it is only necessary that any one of the anode or cathode and any one of the TFT source electrode or drain electrode are electrically connected to each other. TFT stands for Thin Film Transistor.

[0143] for Figure 8B For the display device 100, the organic compound layer 22 is shown as if it is one layer, but the organic compound layer 22 may be a plurality of layers. On the cathode 23, a first protective layer 24 and a second protective layer 25 for reducing degradation of the organic light emitting element 26 are provided.

[0144] for Figure 8B For the display device 100, although the transistor is used as the switching element, another switching element may be used instead.

[0145] In addition, for use in Figure 8B The transistor in the display device 100 is not limited to a transistor using a single crystal silicon wafer, but may be a thin film transistor having an active layer on an insulating surface of a substrate. As the active layer, single crystal silicon, amorphous silicon, non-single crystal silicon such as microcrystalline silicon, non-single crystal oxide semiconductors such as indium zinc oxide or indium gallium zinc oxide, etc. can be exemplified. By the way, a thin film transistor is also called a TFT element.

[0146] Figure 8B The transistor included in the display device 100 may be formed in a substrate such as a Si substrate. Here, the wording "formed in a substrate" means that the substrate such as a Si substrate itself is processed to manufacture the transistor. In other words, including the transistor in the substrate may also be regarded as the substrate and the transistor being formed integrally.

[0147] The luminous brightness of the organic light-emitting element according to the present embodiment is controlled by a TFT which is an example of a switching element, and since the organic light-emitting elements are arranged in a plurality of planes, images can be displayed by their respective luminous brightness. By the way, the switching element according to the present embodiment is not limited to a TFT, but may also be a transistor formed of low-temperature polycrystalline silicon, or an active matrix driver formed on a substrate such as a Si substrate. The term "on a substrate" may also be said to be "in a substrate". Whether to arrange a transistor in a substrate or to use a TFT is selected according to the size of the display unit. For example, when the size is about 0.5 inches, it is preferred to arrange an organic light-emitting element on a Si substrate.

[0148] Fig. 91 is a schematic diagram showing an example of a display device according to the present embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit substrate 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected to flexible printed circuits FPC 1002 and 1004, respectively. Transistors are printed on the circuit substrate 1007. Unless the display device is a portable device, it is not required to set the battery 1008, or even if the display device is a portable device, the battery 1008 may be set at a different position.

[0149] The display device according to this embodiment may include a color filter including red, green, and blue. The color filter may be arranged in a delta array with red, green, and blue colors.

[0150] The display device according to this embodiment can be used as a display unit of a portable terminal. In this case, the display device can have both a display function and an operation function. As a portable terminal, a portable phone such as a smartphone, a tablet computer, a head-mounted display, etc. can be exemplified.

[0151] The display device according to this embodiment can be used for the display unit of an imaging device, which has an optical unit and an imaging element, the optical unit has a plurality of lenses, and the imaging element is used to receive light transmitted through the optical unit. The imaging device can have a display unit for displaying information acquired by the imaging element. In addition, the display unit can be a display unit exposed to the outside of the imaging device, or a display unit configured in a viewfinder. The imaging device can be a digital camera or a digital video camera.

[0152] Fig. 10A 11 is a schematic diagram showing an example of an image pickup device according to the present embodiment. The image pickup device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may include a display device according to the present embodiment. In this case, the display device may display not only an image to be captured but also environmental information, an image pickup instruction, and the like. The environmental information may be the intensity of natural light, the direction of natural light, the moving speed of a subject, the possibility that a subject is shielded by an obstruction, and the like.

[0153] The time suitable for video recording is a short period of time. Therefore, it is desirable to display information as quickly as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a high response speed. Compared with a liquid crystal display device, a display device using the organic light-emitting element can be more preferably used for a device requiring a display speed.

[0154] The camera 1100 has an optical part not shown. The optical part has a plurality of lenses, and forms an image on an image pickup element housed in a housing 1104. The plurality of lenses can adjust the focus by adjusting the relative positions. This operation can also be performed automatically. The camera may be referred to as a photoelectric conversion device. The photoelectric conversion device may not include a sequential camera method, but may include a method of detecting a difference from a previous image, a method of cutting from a continuously recorded image, and other methods as a camera method.

[0155] Fig. 10B 12 is a schematic diagram showing an example of an electronic device according to the present embodiment. The electronic device 1200 has a display unit 1201, an operating unit 1202 and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having a circuit, a battery and a communication unit. The operating unit 1202 may be a button, or a reaction unit of a touch panel system. The operating unit may be a biometric recognition unit that recognizes fingerprints and performs unlocking, etc. The electronic device having a communication unit may also be said to be a communication device. The electronic device may further have a camera function by including a lens and an imaging element. The image captured by the camera function is projected on the display unit. The electronic equipment includes a smartphone, a laptop computer, and the like.

[0156] Fig.11A and Fig. 11B Each is a schematic diagram showing an example of a display device according to the present embodiment. Fig.11A The display device 1300 is a display device such as a television monitor or a PC monitor. The display device 1300 includes a frame 1301 and includes a display portion 1302. For the display portion 1302, the light-emitting device according to this embodiment mode can be used.

[0157] The display device 1300 includes a frame 1301 and a base 1303 for supporting a display portion 1302. The base 1303 is not limited to Fig.11A The lower side of the frame 1301 can also serve as a base.

[0158] In addition, the frame 1301 and the display portion 1302 may be curved, and the radius of curvature thereof may be at least 5000 mm and not more than 6000 mm.

[0159] Fig. 11B is a schematic diagram showing another example of the display device according to the present embodiment. Fig. 11BThe display device 1310 is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display portion 1311, a second display portion 1312, a housing 1313, and a bending point 1314. The first display portion 1311 and the second display portion 1312 may have a light-emitting device according to this embodiment. The first display portion 1311 and the second display portion 1312 may be a seamless display device. The first display portion 1311 and the second display portion 1312 may be separated at the bending point. The first display portion 1311 and the second display portion 1312 may display different images, respectively, or one image may be displayed at the first display portion and the second display portion.

[0160] Fig. 12A 14 is a schematic diagram showing an example of a lighting device according to the present embodiment. The lighting device 1400 may have a housing 1401, a light source 1402, a circuit substrate 1403, an optical film 1404, and a light diffusion unit 1405. The light source 1402 may have an organic light-emitting element according to the present embodiment. The optical filter may be a filter for improving the color rendering of the light source. The light diffusion unit 1405 may perform lighting, etc., or may effectively diffuse light from the light source and may deliver light to a wide range. The optical filter and the light diffusion unit 1405 may be provided on the light-emitting side of the lighting. If necessary, a cover may be provided on the outermost side.

[0161] The lighting device is, for example, a device for indoor lighting. The lighting device can emit white, daylight white, and any color light from blue to red. The lighting device can have a light modulation circuit for modulating its light. The lighting device can have an organic light emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit for converting an AC voltage into a DC voltage. In addition, the color temperature of white is 4200K, and the color temperature of daylight white is 5000K. The lighting device can have a color filter.

[0162] In addition, the lighting device according to this embodiment may have a heat dissipation unit. The heat dissipation unit dissipates the heat in the device to the outside of the device. Examples of the heat dissipation unit include metals with high specific heat, liquid silicon, and the like.

[0163] Fig. 12B 15 is a schematic diagram of a car which is an example of a mobile unit according to the present embodiment. A tail light of a car is an example of a lamp. A car 1500 has a tail light 1501 and can be in a form of turning on the tail light when performing a braking operation or the like.

[0164] The taillight 1501 may have an organic light emitting element according to the present embodiment. The taillight 1501 may have a protective member for protecting the organic EL element. The protective member may use any material as long as the material strength is high to a certain extent and is transparent, and the protective member is preferably formed of polycarbonate or the like. Polycarbonate may be mixed with a flange carboxylic acid derivative, an acrylonitrile derivative, or the like.

[0165] The automobile 1500 may have a vehicle body 1503 and a window 1502 mounted on the vehicle body. The window may be a transparent display unless it is a window for checking the front and rear of the automobile. The transparent display may have an organic light emitting element according to the present embodiment. In this case, constituent materials such as electrodes included in the organic light emitting element all include transparent members.

[0166] The mobile unit according to the present embodiment has a driving member such as an engine or a motor and a moving device such as a wheel, a propeller or a tire. Specifically, the mobile unit may be a car, a ship, an airplane, a drone, a bicycle, a rail vehicle, etc. The mobile unit may have a body and a lamp disposed on the body. The lamp may emit light for notifying the position of the body. The lamp has an organic light emitting element according to the present embodiment.

[0167] Reference Fig.13A and Fig. 13B , an application example of the display device of each embodiment will be described. The display device is applicable to a system that can be mounted as a wearable device (such as smart glasses, HMD, or smart contact lenses, etc.). The imaging display device used in this application example has an imaging device capable of photoelectrically converting visible light and a display device capable of emitting visible light.

[0168] Fig.13A The figure shows glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front surface side of a lens 1601 of the glasses 1600. In addition, on the back side of the lens 1601, a display device of each embodiment is provided.

[0169] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source for supplying power to the camera 1602 and the display device according to each embodiment. In addition, the control device 1603 controls the operation of the camera 1602 and the display device. At the lens 1601, an optical system for collecting light to the camera 1602 is formed.

[0170] Fig. 13BThe glasses 1610 (smart glasses) according to an applicable example are illustrated. The glasses 1610 have a control device 1612. On the control device 1612, a camera and a display device corresponding to the camera 1602 are mounted. At the lens 1611, an optical system for projecting light emitted by the display device in the control device 1612 is formed so that the image is projected on the lens 1611. The control device 1612 serves as a power source for supplying power to the camera and the display device, and controls the operation of the camera and the display device. The control device may have a line of sight detection unit for detecting the line of sight of the wearer. In order to detect the line of sight, infrared radiation may be used. The infrared radiation emitting unit emits infrared light with respect to the eyeball of the user who carefully observes the displayed image. The camera unit having a light receiving unit detects the light reflected from the eyeball of the emitted infrared light, and a camera image of the eyeball is obtained. A reduction device for reducing light from the infrared radiation emitting unit to the display unit in a plan view reduces the reduction in image quality.

[0171] The user's line of sight with respect to the displayed image is detected from a captured image of the eyeball obtained from infrared light photography. For the detection of the line of sight using the captured image of the eyeball, a given known method is applicable. As an example, a line of sight detection method based on a Purkinje image generated due to reflection of emitted light at the cornea can be used.

[0172] More specifically, a line of sight detection process based on the pupil-corneal reflection method is performed. Using the pupil-corneal reflection method, a line of sight vector indicating the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's line of sight.

[0173] A display device according to an embodiment of the present invention has an imaging device having a light receiving unit and can control a display image of the display device based on user line of sight information from the imaging device.

[0174] Specifically, for the display device, a first display area that is carefully observed by the user and a second display area other than the first display area are determined based on the line of sight information. The first display area and the second display area may be determined by a control device of the display device, or may receive a display area determined by an external control device. In the display area of ​​the display device, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be set to be lower than the resolution of the first display area.

[0175] In addition, the display area has a first display area and a second display area different from the first display area, and an area with a higher priority is determined from the first display area and the second display area based on the line of sight information. The first display area and the second display area can be determined by the control device of the display device, or a display area determined by an external control device can be received. The resolution of the area with a higher priority can be controlled to be higher than the resolution of the area other than the area with a higher priority. In other words, the resolution of the area with a relatively lower priority can be set to be lower.

[0176] By the way, in order to determine the first display area and the area with a higher priority, AI can be used. AI can be a model constructed such as using an eyeball image and the direction in which the eyeball of the image is actually viewed as training data to estimate the sight angle from the eyeball image and the distance between the eyeball image and the object in front of the sight. The AI ​​program may be included in the display device, may be included in the camera device, or may be included in an external device. When the AI ​​program is included in the external device, it is transmitted to the display device via communication.

[0177] When display control is performed based on visual observation detection, the present invention is preferably applicable to smart glasses further having a camera for external photography. The smart glasses can display photographed external information in real time.

[0178] Fig.14A and Fig. 14B Each shows an image forming apparatus according to an embodiment of the present invention. Fig.14A 1 is a schematic diagram of an image forming apparatus 1700 according to an embodiment of the present invention. The image forming apparatus 1700 has a photosensitive member, an exposure light source, a developing section, a charging section, a transfer unit, a conveying roller, and a fixing unit.

[0179] Light 1729 is applied from an exposure light source 1728, and an electrostatic latent image is formed on the surface of the photosensitive member 1727. The exposure light source has an organic light emitting element according to the present invention. The developing section 1731 has a toner, etc. The charging section 1730 charges the photosensitive member. The transfer unit 1732 transfers the developed image to a recording medium 1734. The conveying section 1733 conveys the recording medium 1734. The recording medium is, for example, paper. The fixing section 1735 fixes the image formed on the recording medium 1734.

[0180] Fig. 14B and Fig. 14CEach is a schematic diagram showing a state where a plurality of light emitting portions 1736 are arranged on a long substrate in an exposure light source 1728. Reference numeral 1737 indicates a direction parallel to the axis of the photosensitive member and indicates an array direction in which the organic light emitting elements are arranged. The array direction is the same as the direction of the axis around which the photosensitive member 1727 rotates. This direction may also be referred to as the long axis direction of the photosensitive member.

[0181] Fig. 14B This is a form in which the light emitting portion is arranged along the long axis direction of the photosensitive member. Fig. 14C is with Fig. 14B The light emitting parts are alternately arranged in the first column and the second column along the column direction. The first column and the second column are arranged at different positions in the row direction.

[0182] In the first column, a plurality of light emitting units are arranged at intervals. The second column has a light emitting unit at each position corresponding to the intervals between the light emitting units in the first column. That is, the plurality of light emitting units are also arranged at intervals in the row direction.

[0183] Fig. 14C The configuration may also be interpreted as, for example, a lattice configuration, a houndstooth check configuration, or a checkerboard pattern configuration.

[0184] As described so far, using the device using the organic light emitting element according to the present embodiment enables display having good image quality and being stable even for a long time.

[0185] Other embodiments

[0186] In the above description, an embodiment using an organic EL element as a light-emitting element has been described. However, the present invention is also applicable to a light-emitting device using a light-emitting element other than an organic EL element. As in a light-emitting device using a light-emitting element other than an organic EL element, the pad electrode is etched only once when etching the sealing layer. As a result, the etching amount of the pad electrode can be reduced. As a result, for example, high reliability can be obtained with respect to corrosion of the pad electrode caused by long-term immersion in water in a cutting step of a mounting process.

[0187] According to the present disclosure, the reliability of a pad of a light emitting device can be improved.

[0188] While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

Claims

1. A light emitting device, comprising: a pixel region including a plurality of light emitting elements; and The peripheral region includes an electrode terminal for establishing electrical connection with an external terminal, a first insulating layer arranged on the electrode terminal, and a second insulating layer arranged on the first insulating layer, wherein The electrode terminal includes a first metal layer exposed through a first opening provided in the first insulating layer, An upper surface of an end portion of the first insulating layer is inclined relative to a bottom surface of the first metal layer, and the upper surface of the end portion forms a portion of the first opening. The second insulating layer has a second opening in the first opening, and, The second insulating layer contacts the electrode terminal in the first opening.

2. The light emitting device according to claim 1, wherein: The second insulating layer functions as a sealing layer.

3. The light emitting device according to claim 2, wherein: An upper surface of the sealing layer has a portion inclined with respect to the first metal layer.

4. The light emitting device according to claim 2, wherein: An upper surface of the sealing layer is parallel to the first metal layer in a region adjacent to the first opening.

5. The light emitting device according to claim 2, wherein: The sealing layer has a three-layer structure in which an oxide film layer is sandwiched between insulating layers.

6. The light emitting device according to claim 1, wherein: In a plan view, an end portion of the first insulating layer is separated from the second opening.

7. The light emitting device according to claim 1, further comprising a second metal layer disposed on the first metal layer, wherein: The first insulating layer is disposed on the second metal layer.

8. The light emitting device according to claim 7, wherein: The second metal layer and the second insulating layer contact each other in the first opening.

9. The light emitting device according to claim 1, wherein: The first insulating layer has an inclination angle of at least 20 degrees and not more than 50 degrees relative to the first metal layer.

10. The light emitting device according to claim 1, wherein: The second insulating layer has a first inclined portion, a parallel portion, and a second inclined portion. The first inclined portion has an upper surface inclined relative to the first metal layer, the parallel portion has an upper surface parallel to the first metal layer, and the second inclined portion has an upper surface inclined relative to the first metal layer.

11. The light emitting device according to claim 2, wherein: The moisture permeability of the first insulating layer is greater than the moisture permeability of the sealing layer.

12. The light emitting device according to claim 1 or 2, wherein: The first metal layer has a recessed portion at a portion of the second opening, and a depth of the recessed portion is at least 1 nm and not more than 100 nm.

13. The light emitting device according to claim 1 or 2, wherein: The light emitting element is an organic EL light emitting element. 14 . A display device comprising a display panel, a frame provided with the display panel, and a circuit substrate, wherein the display panel comprises the light emitting device according to claim 1 .

15. A photoelectric conversion device comprising an optical unit having a plurality of lenses, an image sensor configured to receive light having passed through the optical unit, and a display unit configured to display an image captured by the image sensor, in, The display unit includes the light emitting device according to any one of claims 1 to 13.

16. An electronic device, comprising: A display unit comprising the light emitting device according to any one of claims 1 to 13; a housing provided with the display unit; and A communication unit is provided in the housing and is configured to perform external communication.

17. A lighting device, comprising: A light source comprising a light emitting device according to any one of claims 1 to 13; and A light diffusion unit or an optical film is configured to transmit light generated by the light source.

18. A mobile object, comprising: A lighting fixture comprising the light emitting device according to any one of claims 1 to 13; and A main body is provided with the lighting device.

19. An apparatus comprising: An image pickup device disposed on the front surface side of the lens; A display device comprising the light emitting device according to any one of claims 1 to 13, wherein the display device is located on the back side of the lens.

20. An image forming device comprising: photosensitive member, An exposure light source is opposed to the photosensitive member, the exposure light source comprising the light emitting device according to any one of claims 1 to 13.

21. A method for manufacturing a light emitting device, the method comprising the following steps: forming a metal portion including a first metal layer; forming a first insulating layer on the metal portion; forming a first opening in the first insulating layer by isotropically etching the first insulating layer; forming a second insulating layer on the first insulating layer and the first metal layer; and A second opening is formed in the second insulating layer by anisotropically etching the second insulating layer, so that the first metal layer is exposed at the second opening.

22. The method for manufacturing a light emitting device according to claim 21, further comprising the step of forming a second metal layer on the first metal layer, wherein: In the step of forming the first opening in the first insulating layer, the first insulating layer is isotropically etched in a case where the second metal layer is an etching stop layer.

23. The method for manufacturing a light emitting device according to claim 22, further comprising the following steps: After anisotropically etching the second insulating layer, the second metal layer is etched to expose the first metal layer at the second opening.

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