The invention discloses rotary batch
epitaxy equipment, which comprises a
wafer loading
system, an equipment front-end module, a
wafer left
vacuum chamber, a
wafer right
vacuum chamber, a wafer transfer chamber, a
plasma etching cavity, a heating volatilization cavity, a right reaction module and a left reaction module, and is characterized in that the wafer loading
system is used for placing wafer boxes, and 25 wafers are loaded in each wafer box; a
manipulator in the equipment front-end module takes out wafers in a wafer box on the wafer loading
system, carries the wafers to a wafer left
vacuum chamber and a wafer right vacuum chamber after calibration and positioning, a
manipulator in the wafer transfer chamber can grab the wafers in the wafer vacuum chambers, loads the single wafers and conveys the single wafers to a subsequent
reaction chamber, and the wafer transfer chamber can transfer the single wafers to the subsequent
reaction chamber. Selective
epitaxy is carried out firstly, then full
epitaxy is carried out, a, adhesion and fracture between a wafer boat and a wafer are avoided, and b, the epitaxy temperature is reduced, the
growth time is shortened, the boundary of Si and SiGe
layers is clear, and the
electrical performance of the
chip is improved.