Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

Provided is a technique capable of preventing a substrate from being attached to a support. The present invention is provided with: a boat having at least one first support section with respect to one substrate; a processing container which accommodates the boat and processes the mounted substrate; a gas supply device that supplies a processing gas into the processing container; a plurality of second support parts provided so as to be capable of moving in the vertical direction relative to the boat; a rotating device having a rotating shaft that rotatably supports the boat; a drive device capable of relatively lifting the second support section upward and floating the substrate from at least one of the first support sections; and a controller capable of forming a film on the substrate by controlling the following steps a and b for a predetermined number of times: a step a in which the substrate supported by the boat is processed by supplying a gas from the gas supply device while rotating the boat, and a step b in which the substrate supported by the boat is processed by supplying a gas from the gas supply device while rotating the boat; in the step b, the substrate is separated from the first support portion in a state in which the substrate is held in the processing container.

Description

Technical Field

[0001] The present disclosure is a technology effectively applicable to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] In a substrate processing apparatus as a semiconductor manufacturing apparatus for processing semiconductor substrates (substrates), a substrate support, ie, a wafer boat storing a plurality of semiconductor substrates is arranged inside a vertical processing furnace to perform film forming processing (see, for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2020 / 064606 Summary of the invention

[0006] Problems to be solved by the invention

[0007] When a thick film is formed on a substrate, the substrate support and the substrate may adhere to each other due to the film formed near the contact portion between the substrate and the substrate support. If such a substrate is removed from the substrate support, particles may be generated.

[0008] The present disclosure provides a technology for preventing a substrate from adhering to a support member during film formation.

[0009] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0010] Means for solving problems

[0011] A typical outline of the present disclosure will be briefly described as follows.

[0012] According to one embodiment of the present disclosure, a technology as follows can be provided, comprising: a wafer boat having at least one first support portion relative to a substrate; a processing container for accommodating the wafer boat and processing the substrate placed thereon; a gas supply device for supplying processing gas into the processing container; a plurality of second support portions which are arranged to be movable in an up-and-down direction relative to the wafer boat; a rotating device having a rotating shaft capable of rotatably supporting the wafer boat; a driving device capable of relatively lifting the second support portions upward so that the substrate floats from at least one of the first support portions; and a controller capable of controlling the following steps a and b to be performed a predetermined number of times, thereby forming a film on the substrate, wherein in step a, gas is supplied from the gas supply device while the wafer boat is rotated to process the substrate supported by the wafer boat; and in step b, the substrate is separated from the first support portion while the substrate is maintained in the processing container.

[0013] Effects of the Invention

[0014] According to the present disclosure, it is possible to provide a technology capable of preventing a substrate from being attached to a support member during film formation. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and shows a processing furnace 202 portion in a vertical cross-sectional view.

[0016] Figure 2 is a schematic diagram of a vertical processing furnace of a substrate processing device preferably used in one embodiment of the present disclosure, Figure 1 The AA line cross-sectional view shows a portion of the processing furnace 202 .

[0017] Figure 3 This is a perspective view of a master boat 217 a preferably used in one embodiment of the present disclosure.

[0018] Figure 4 This is a perspective view of a sub-boat 217 b preferably used in one embodiment of the present disclosure.

[0019] Figure 5 It is a perspective view of a furnace mouth section for explaining a driving device preferably used in one embodiment of the present disclosure.

[0020] Figure 6 It is a longitudinal sectional view of the vicinity of the bottom plate of the wafer boat preferably used in one embodiment of the present disclosure, and is a sectional view for explaining a sub-boat stage to which the sub-boat 217 b is fixed.

[0021] Figure 7This is a schematic configuration diagram of a controller 121 of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and shows a control system of the controller 121 in a block diagram.

[0022] Figure 8 It is a diagram showing a production flow in one embodiment of the present disclosure.

[0023] Fig. 9 It is a diagram for explaining a driving device according to Modification 1.

[0024] Fig.10 This is a diagram for explaining a driving device according to a second modification.

[0025] Fig.11 This is a diagram for explaining a driving device according to a third modification. DETAILED DESCRIPTION

[0026] Hereinafter, one mode of the present disclosure will be described with reference to the drawings. In addition, the drawings used in the following description are all schematic drawings, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. are not necessarily consistent with reality. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. are not necessarily consistent between multiple drawings.

[0027] (1) Configuration of substrate processing apparatus

[0028] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a temperature control unit (heating unit). The heater 207 is cylindrical and is supported by a holding plate so as to be vertically installed. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas with heat.

[0029] On the inner side of the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS), and is formed into a cylindrical shape with an open upper end and a lower end. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203, and is configured to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 is installed vertically in the same manner as the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. The wafer 200 is processed in the processing chamber 201 .

[0030] In the processing chamber 201, nozzles 249a to 249c as the first to third supply parts are respectively provided on the side walls penetrating the manifold 209. The nozzles 249a to 249c are also referred to as the first to third nozzles, respectively. The nozzles 249a to 249c are made of heat-resistant materials such as quartz or SiC. Gas supply pipes 232a to 232c are respectively connected to the nozzles 249a to 249c. The nozzles 249a to 249c are different nozzles, and the nozzles 249a and 249c are respectively provided adjacent to the nozzle 249b.

[0031] In the gas supply pipes 232a to 232c, mass flow controllers (MFC) 241a to 241c as flow controllers (flow control units) and valves 243a to 243c as opening and closing valves are respectively provided in order from the upstream side of the gas flow. On the downstream side of the gas supply pipe 232a from the valve 243a, gas supply pipes 232d and 232f are respectively connected. On the downstream side of the gas supply pipe 232b from the valve 243b, gas supply pipes 232e and 232g are respectively connected. On the downstream side of the gas supply pipe 232c from the valve 243c, a gas supply pipe 232h is connected. In the gas supply pipes 232d to 232h, MFCs 241d to 241h and valves 243d to 243h are respectively provided in order from the upstream side of the gas flow. The gas supply pipes 232a to 232h are made of metal materials such as SUS, for example.

[0032] like Figure 2As shown, the nozzles 249a to 249c are respectively arranged in a circular ring-shaped space between the inner wall of the reaction tube 203 and the wafer 200 when viewed from above, and stand up toward the arrangement direction of the wafer 200 along the upper part of the lower part of the inner wall of the reaction tube 203. That is, the nozzles 249a to 249c are respectively arranged along the wafer arrangement area in the area horizontally surrounding the wafer arrangement area on the side of the wafer arrangement area where the wafers 200 are arranged. When viewed from above, the nozzle 249b is arranged to be opposite to the exhaust port 231a described later on a straight line across the center of the wafer 200 carried into the processing chamber 201. The nozzles 249a and 249c are arranged along the inner wall of the reaction tube 203 (the outer periphery of the wafer 200) to sandwich a straight line L passing through the center of the nozzle 249b and the exhaust port 231a from both sides. The straight line L is also a straight line passing through the nozzle 249b and the center of the wafer 200. That is, the nozzle 249c can also be said to be arranged on the opposite side of the nozzle 249a across the straight line L. The nozzles 249a and 249c are arranged line-symmetrically with the straight line L as the axis of symmetry. Gas supply holes 250a to 250c for supplying gas are respectively provided on the side surfaces of the nozzles 249a to 249c. The gas supply holes 250a to 250c are respectively opened to be opposite (facing) to the exhaust port 231a when viewed from above, and gas can be supplied toward the wafer 200. A plurality of gas supply holes 250a to 250c are provided from the bottom to the top of the reaction tube 203.

[0033] On the outer periphery of the wafer 200, there is provided Figure 3 The main boat 217 a includes a plurality of fixed support columns 3 and the sub boat 217 b includes a plurality of movable support columns 4 .

[0034] The etching gas is supplied from the gas supply pipe 232a through the MFC 241a, the valve 243a, and the nozzle 249a into the processing chamber 201. For example, a gas containing fluorine (F) can be used as the etching gas.

[0035] The reducing gas is supplied from the gas supply pipe 232b through the MFC 241b, the valve 243b, and the nozzle 249b into the processing chamber 201. For example, a gas containing hydrogen (H) can be used as the reducing gas.

[0036] From the gas supply pipe 232c, the second process gas as the raw material gas is supplied into the process chamber 201 via the MFC 241c, the valve 243c, and the nozzle 249c. For example, a gas containing a Group 14 element such as germanium (Ge) can be used as the second process gas.

[0037] From the gas supply pipe 232d, the first processing gas as a raw material gas is supplied into the processing chamber 201 via the MFC 241d, the valve 243d, the gas supply pipe 232a, and the nozzle 249a. For example, a gas containing a Group 14 element such as silicon (Si) can be used as the first raw material gas.

[0038] From the gas supply pipe 232e, the second process gas as the dopant gas is supplied into the process chamber 201 via the MFC 241e, the valve 243e, the gas supply pipe 232b, and the nozzle 249b.

[0039] From the gas supply pipes 232f to 232h, the inert gas is supplied into the processing chamber 201 via the MFCs 241f to 241h, valves 243f to 243h, gas supply pipes 232a to 232c, and nozzles 249a to 249c. The inert gas functions as a purge gas, a carrier gas, a dilution gas, and the like.

[0040] The etching gas supply system (gas supply system containing F and H) is mainly composed of the gas supply pipe 232a, MFC241a, and valve 243a. The reducing gas supply system is mainly composed of the gas supply pipe 232b, MFC241b, and valve 243b. The second processing gas supply system (gas supply system containing Ge) is mainly composed of the gas supply pipe 232c, MFC241c, and valve 243c. The first processing gas supply system (gas supply system containing Si) is mainly composed of the gas supply pipe 232d, MFC241d, and valve 243d. The second processing gas supply system (dopant gas supply system) is mainly composed of the gas supply pipe 232e, MFC241e, and valve 243e. The inert gas supply system is mainly composed of gas supply pipes 232f~232h, MFC241f~241h, and valves 243f~243h.

[0041] Among the various supply systems described above, any one or all of the supply systems may be configured as an integrated supply system 248 in which valves 243a to 243h or MFCs 241a to 241h are integrated. The integrated supply system 248 is configured to be connected to each of the gas supply pipes 232a to 232h, and the supply operation of various substances (various gases) in the gas supply pipes 232a to 232h, that is, the opening and closing operation of the valves 243a to 243h or the flow rate adjustment operation of the MFCs 241a to 241h, is controlled by the controller 121 described later. The integrated supply system 248 is configured as an integrated unit of an integral type or a split type, and can be loaded and unloaded as an integrated unit unit for the gas supply pipes 232a to 232h, and is configured so that the integrated supply system 248 can be repaired, replaced, or added as an integrated unit unit.

[0042] An exhaust port 231a for exhausting the ambient gas in the processing chamber 201 is provided below the side wall of the reaction tube 203. Figure 2 As shown, the exhaust port 231a is arranged at a position opposite (facing) the nozzles 249a to 249c (gas supply holes 250a to 250c) across the wafer 200 when viewed from above. The exhaust port 231a can also be arranged along the upper part of the side wall of the reaction tube 203, that is, along the wafer arrangement area. The exhaust port 231a is connected to the exhaust pipe 231. The exhaust pipe 231 is connected to a vacuum pump 246 as a vacuum exhaust device via a pressure sensor 245 as a pressure detector (pressure detection unit) that detects the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulating unit). The APC valve 244 is configured to open and close the valve while the vacuum pump 246 is in operation, thereby enabling vacuum exhaust in the processing chamber 201 and stopping vacuum exhaust. Furthermore, while the vacuum pump 246 is in operation, the valve opening is adjusted based on pressure information detected by the pressure sensor 245, thereby enabling the pressure in the processing chamber 201 to be adjusted. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system.

[0043] Below the manifold 209, a sealing cover 219 is provided as a furnace cover body that can hermetically seal the lower end opening of the manifold 209. The sealing cover 219 is made of a metal material such as SUS and is formed into a disc shape. On the upper surface of the sealing cover 219, an O-ring 220b is provided as a sealing member that abuts against the lower end of the manifold 209. Below the sealing cover 219, a rotating mechanism 267 as a rotating device that rotates the wafer boat 217 (main wafer boat 217a and auxiliary wafer boat 217b) described later is provided. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The rotating mechanism 267 and the sealing cover 219 are configured to be lifted and lowered in the vertical direction by the wafer boat elevator 115 as an elevator arm provided as a lifting mechanism outside the reaction tube 203. That is, the boat elevator 115 as an elevator arm can drive the rotation mechanism 267 and the cover (sealing cover 219) up and down. The boat elevator 115 is configured as a transport device (transport mechanism) that transports the wafer 200 in and out of the processing chamber 201 by raising and lowering the sealing cover 219.

[0044] Furthermore, the driving device 268 is provided below the sealing cover 219. The driving device 268 is used in the processing chamber 201 to lift up the plurality of wafers 200 in the wafer boat 217 at once during the film forming process.

[0045] A shutter 219s as a furnace cover is provided below the manifold 209. When the sealing cover 219 is lowered to remove the wafer boat 217 from the processing chamber 201, the lower end opening of the manifold 209 can be hermetically sealed. The shutter 219s is made of a metal material such as SUS and is formed in a disc shape. An O-ring 220c as a sealing member abutting against the lower end of the manifold 209 is provided on the upper surface of the shutter 219s. The opening and closing action (lifting action or rotation action, etc.) of the shutter 219s is controlled by the shutter opening and closing mechanism 115s.

[0046] The wafer boat 217 as a substrate support member includes Figure 3 The main crystal boat 217a and Figure 4 The sub-wafer boat 217b shown in the figure can be a combination of the main wafer boat 217a and the sub-wafer boat 217b. In addition, the main wafer boat 217a can also be simply referred to as the wafer boat 217a.

[0047] The main wafer boat 217a has a plurality of first support parts 21, and the plurality of first support parts 21 are configured to support a plurality of wafers 200, for example, 25 to 200 wafers, in a horizontal position and with their centers aligned with each other in a vertical direction in multiple layers, that is, to arrange them with intervals. That is, the main wafer boat 217a has at least one first support part 21 for one substrate (wafer). The main wafer boat 217a is made of heat-resistant materials such as quartz or SiC. Figure 1 As shown, the main wafer boat 217 a is supported in multiple layers at the bottom thereof by heat insulating plates 218 made of a heat-resistant material such as quartz or SiC.

[0048] like Figure 3 As shown, the main wafer boat 217a includes: a plurality of fixed pillars 3 (here, three fixed pillars) extending in a direction substantially perpendicular to the wafer 200 and each provided with a first supporting portion; and a first connecting portion 31 for mutually fixing the plurality of fixed pillars 3, the first connecting portion 31 including: a first bottom plate 31a for mutually fixing the vicinity of the lower ends of the plurality of fixed pillars 3; and a first upper plate 31b for mutually fixing the vicinity of the upper ends of the plurality of fixed pillars 3. A plurality of first supporting portions 21 are provided on each of the plurality of fixed pillars 3.

[0049] The secondary wafer boat 217b has a plurality of second support parts 22, and the plurality of second support parts 22 are configured to support a plurality of wafers 200, for example, 25 to 200 wafers, in a horizontal posture and in a state where the centers of the wafers are aligned with each other in a vertical direction in multiple layers, that is, to arrange the wafers 200 with intervals. The plurality of second support parts 22 are arranged to be movable in the vertical direction relative to the main wafer boat 217a. The secondary wafer boat 217b is made of a heat-resistant material such as quartz or SiC.

[0050] like Figure 4 As shown, the auxiliary crystal boat 217b includes: a plurality of movable pillars 4 (here, four movable pillars) extending in a direction substantially perpendicular to the wafer 200 and respectively provided with a second support portion 22; and a second coupling portion 41 that fixes the plurality of movable pillars 4 to each other, the second coupling portion 41 including: a second bottom plate 41a that fixes the plurality of movable pillars 4 to each other near the lower ends and a second top plate 41b that fixes the plurality of movable pillars 4 to each other near the upper ends; and an intermediate plate 41c that fixes the plurality of movable pillars 4 to each other near the middle (the portion between the upper and lower ends). A plurality of second support portions 22 are provided on each of the plurality of movable pillars 4. The second top plate 41b and the second bottom plate 41a of the auxiliary crystal boat 217b are configured to be embedded between the first top plate 31b and the first bottom plate 31a of the main crystal boat 217a. The plurality of movable pillars 4 are arranged in a manner that allows them to be separated from and contacted with the drive device 268, as shown in FIG. Figure 2 As shown in FIG. 1 , the substrate 200 is supported on the main boat 217 a and is arranged to be rotatable together with the main boat 217 a .

[0051] The second bottom plate 41a is a plate having a shape that can be stably placed on the first bottom plate 31a. A notch 42 is provided on one side of each of the second bottom plate 41a, the second upper plate 41b and the middle plate 41c, into which one of the plurality of fixed pillars 3 is inserted. That is, the sub-crystal boat 217b has: a plurality of movable pillars 4 each provided with a second supporting portion 22; and a second connecting portion 41 that fixes the plurality of movable pillars 4 to each other. The sub-crystal boat 217b can be movably arranged in the up-and-down directions within the range limited at the upper and lower ends of the main crystal boat 217a. That is, as in Figure 4 As shown in the enlarged view, the upper surface of the second supporting part 22a is located below the upper surface of the first supporting part 21a by a distance c1 when the sub-wafer boat 217b is located at the lower side. On the other hand, the upper surface of the second supporting part 22a is limited to be located below the position of the lower surface of the second supporting part 22b (distance: c1+c2-c3) in consideration of the thickness (c3) of the wafer 200 when the sub-wafer boat 217b is located at the upper side so as not to touch the lower surface of the second supporting part 22b.

[0052] Here, when the number of movable pillars 4 is N (N is an integer greater than or equal to 3), the number of fixed pillars 3 is N-1 or N+1. In this case, the second bottom plate 41a is formed of a plate having at least N vertices, and the plurality of movable pillars 4 are connected to the N vertices. In addition, the first supporting portion 21 of the fixed pillar 3 is arranged closer to the center of the substrate 200 than the second supporting portion 22.

[0053] The driving device 268 is configured to lift the second supporting portion 22 relatively upward, so that the substrate 200 floats from at least one of the first supporting portions 21. Specifically, in the configuration of the combination of the main wafer boat 217a and the sub-wafer boat 217b, the sub-wafer boat 217b is configured to be movable in the up-down direction relative to the range limited at the upper and lower ends of the main wafer boat 217a. In addition, during the film forming process, the driving device 268 moves the sub-wafer boat 217b upward relative to the range limited at the upper and lower ends of the main wafer boat 217a, thereby lifting a plurality of wafers 200 at the same time.

[0054] When a thick film is formed on a substrate, a film is also formed on the substrate support (wafer boat) itself according to the film thickness, so that the substrate support and the substrate are attached to each other, thereby generating particles. In order to reduce the generation of such particles, the following method is considered: when a certain film thickness is formed, the substrate support is taken out from the processing furnace at a time, and the substrates are lifted up one by one in the transfer chamber by a transfer machine and returned to the original place, and the substrate support is loaded into the interior of the processing furnace again to form a thick film on the substrate. However, with regard to this method, there are situations in which the film forming time is increased or the film quality is degraded due to oxidation, and the heat accumulation is uneven. On the other hand, as in the present embodiment, by lifting the substrate 200 in the processing container 201, the film forming time can be shortened and the film quality can be improved. In addition, since the action of lifting multiple wafers 200 at the same time is carried out under the reduced pressure in the processing furnace 202 (processing container 201), the processing capacity is dramatically improved. In addition, since the substrate support is not moved to the transfer chamber, oxidation in the transfer chamber is suppressed, and the heat accumulation of the wafer 200 picked up by the tweezers is reduced. As a result, the quality of the film is improved. In addition, the transfer chamber is an atmosphere or a nitrogen (N2) environment with an oxygen (O2) content of less than 20 ppm. In addition, since the back side (rear side) of the substrate 200 is exposed in the processing container 201, the film is formed on both the surface of the substrate 200 and the opposite back side (rear side), thereby preventing the substrate 200 from warping.

[0055] A temperature sensor 263 as a temperature detector is provided in the reaction tube 203. The power supply to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, so that the temperature in the processing chamber 201 has a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0056] Secondly, use Figure 5 , Figure 6 The structure of the driving device 268 and the sub-boat stage will be described. Figure 5 It is a cross-sectional perspective view for explaining a driving device preferably used in one embodiment of the present disclosure. Figure 6 1 is a cross-sectional view for explaining a sub-boat stage for fixing the sub-boat 217 b which is preferably used in one embodiment of the present disclosure.

[0057] exist Figure 5 The cross-sectional stereoscopic view between the lift arm 115a of the boat lift 115 and the boat stage 501 on which the first bottom plate 31a is mounted and the sub-boat stage 541a on which the second bottom plate 41a is mounted is depicted. A rotating mechanism 267 having a rotating shaft 255 is provided on the lift arm 115a, and the rotating shaft 225 passes through the sealing cover 219 and is connected to the boat stage 501. The rotating shaft 225 rotatably supports the boat stage 501. The circular plate-shaped boat stage 501 is fixed with the rotating shaft 225, and the main boat 217a and the sub-boat 217b are supported thereon. The boat stage 501 is made of a metal material such as SUS and is formed in a disc shape. On the boat stage 501 are mounted: the sub-boat stage 541a on which the disc-shaped second bottom plate 41a is fixed; and the annular first bottom plate 31a is placed around the stage 541a. The wafer boat stage 501 includes a plurality of openings 502 provided at positions corresponding to a plurality of pins 503 described later, and a plurality of pushers (suspension pins) 504 suspended and supported in the plurality of openings 502 so as to be movable up and down.

[0058] The plurality of pins 503 correspond to the driving device 268 in this example. In the plurality of pins 503, a guide (joint) 505 is provided on the lower side of the sealing cover 219. The plurality of pins 503 are provided to penetrate the sealing cover 219 while maintaining the airtightness of the sealing cover 219 through the first bellows 510 provided between the wafer boat stage 501 and the sealing cover 219. The sub-wafer boat stage 541 is configured to be pushed up by the push rod 504, and the push rod 504 is pushed up by the plurality of pins 503. That is, one end of each of the plurality of pins 503 on the outside of the processing container 201 contacts or is fixed to the elevator arm 115a. The other end of each of the plurality of pins 503 on the inside of the processing container 201 is configured to push up the sub-wafer boat stage 541a fixed to the second bottom plate 41a. Thus, the plurality of movable pillars 4 are configured to be lifted up together.

[0059] The space between the rotating device 267 fixed to the lift arm 115 a and the sealing cover 219 is sealed by a second bellows 507 provided to surround the rotating shaft 225 .

[0060] Between the lifter arm 115a and the sealing cover 219, a plurality of elastic support members 520 are provided to apply force to the sealing cover 219 upward. The plurality of elastic support members 520 are provided around the second bellows 507. The plurality of elastic support members 520 are composed of, for example, a spring and a pin, and the pin is a pin that applies force upward by the spring. When the elastic support member 520 is compressed beyond a prescribed value, the plurality of pins 503 of the driving device 268 protrude upward relative to the sealing cover 219, and push upward one or more of the plurality of movable pillars 4 connected to the sub-crystal boat stage 541a.

[0061] exist Figure 5 The drive arrangement 268 (plurality of pins 503) shown has the effect that no new drive mechanism is required.

[0062] Figure 6 The sub-boat stage 541a to which the second bottom plate 41a of the sub-boat 217b is fixed is shown. The sub-boat stage 541a is set on the boat stage 501 to which the rotation axis 225 is fixed. The second bottom plate 41a of the sub-boat 217b is set on the sub-boat stage 541a and fixed to the metal member 61 with screws. Thus, the sub-boat 217b is fixed to the sub-boat stage 541a. By lifting the sub-boat stage 541a, the sub-boat 217b fixed to the sub-boat stage 541a can be raised and lowered, thereby lifting the wafer 200 from the main boat 217a in the reaction chamber 201.

[0063] like Figure 7 As shown in the figure, the controller 121 of the control unit (controller, control unit) is a computer configured with a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 configured as a touch panel, etc. In addition, the controller 121 can be connected to an external storage device 123.

[0064] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. A control program for controlling the actions of the substrate processing device, or a process plan that records the program or conditions of the substrate processing described later, etc. is readable and stored in the storage device 121c. The process plan is combined so that each program of the substrate processing described later can be executed on the substrate processing device through the controller 121, and a specified result can be obtained, and it functions as a program. Hereinafter, the process plan or the control program, etc. are also generally referred to as a program. In addition, the process plan is also referred to as a plan. When the term program is used in this specification, it may include only the plan itself, only the control program itself, or both. RAM121b is configured as a storage area (working area) for temporarily holding programs or data read by CPU121a.

[0065] The I / O port 121d is connected to the above-mentioned MFCs 241a to 241h, valves 243a to 243h, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, shutter opening and closing mechanism 115s, etc.

[0066] The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and can read out a recipe from the storage device 121c according to the input of an operation command from the input / output device 122. The CPU 121a is configured to control the flow rate adjustment operation of various substances (various gases) of the MFCs 241a to 241h, the opening and closing operation of the valves 243a to 243h, the opening and closing operation of the APC valve 244 and the pressure adjustment operation of the APC valve 244 by the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 by the temperature sensor 263, the rotation and rotation speed adjustment operation of the wafer boat 217 by the rotation mechanism 267, the up and down movement of the sub-wafer boat 217b by the driving device 268, the lifting and lowering operation of the wafer boat 217 by the wafer boat elevator 115, the opening and closing operation of the shutter 219s by the shutter opening and closing mechanism 115s, etc. according to the contents of the read out recipe.

[0067] The controller 121 can be configured by installing the above-mentioned program stored in the external storage device 123 on the computer. The external storage device 123 includes, for example, a disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a semiconductor memory such as a USB memory, and an SSD. The storage device 121c or the external storage device 123 is a recording medium configured to be readable by a computer. Hereinafter, these may also be referred to as recording media. When the term recording medium is used in this specification, there may be a case where only the storage device 121c alone is included, a case where only the external storage device 123 alone is included, or a case where both are included. In addition, the provision of the program to the computer may also be carried out without using the external storage device 123, but by using communication means such as the Internet or a dedicated line.

[0068] The controller 121 controls to perform the following steps a and b for a specified number of times, thereby forming a film with a thickness greater than a specified value on the substrate 200. In step a, while the wafer boat (217a, 217b) is rotated, gas is supplied from a gas supply device (232d, 241d, 243d, 232a, nozzle 249a), thereby processing the substrate 200 supported on the wafer boat (217a, 217b); in step b, while the substrate 200 is maintained in the processing container 201, the substrate 200 is separated from the first support part 21a sequentially or simultaneously.

[0069] (2) Substrate processing steps

[0070] use Figure 8 A method of processing a substrate using the above-mentioned substrate processing apparatus as one process of a method of manufacturing a semiconductor device, that is, an example of a processing sequence for growing a film on the surface of a wafer 200 as a substrate, will be described. In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 121.

[0071] When the term "wafer" is used in this specification, it may refer to the wafer itself, or to a stack of a wafer and a predetermined layer or film formed on its surface. When the term "surface of the wafer" is used in this specification, it may refer to the surface of the wafer itself, or to the surface of a predetermined layer, etc. formed on the wafer. When it is stated in this specification that "a predetermined layer is formed on the wafer", it may refer to directly forming a predetermined layer on the surface of the wafer itself, or to forming a predetermined layer on a layer, etc. formed on the wafer. When the term "substrate" is used in this specification, it is synonymous with the term "wafer".

[0072] (Wafer filling and wafer boat loading)

[0073] When a plurality of wafers 200 are loaded into the wafer boat 217 (wafer filling), the shutter 219s is moved by the shutter opening and closing mechanism 115s, and the lower end opening of the manifold 209 is opened (shutter opening). Figure 1 As shown, the wafer boat 217 supporting the plurality of wafers 200 is lifted by the wafer boat elevator 115 and carried into the processing chamber 201 (wafer boat loading). In this state, the sealing cap 219 seals the lower end of the manifold 209 via the O-ring 220b. In this way, the wafers 200 are carried into the processing chamber 201.

[0074] (Pressure regulation and temperature regulation)

[0075] After the loading of the wafer boat is completed, the space in the processing chamber 201 where the wafer 200 is located is evacuated (decompressed and exhausted) by the vacuum pump 246 so that the pressure in the processing chamber 201 is at the desired pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. In addition, the wafer 200 in the processing chamber 201 is heated by the heater 207 so that the desired processing temperature (first temperature) is reached. At this time, the power supply status to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the desired temperature distribution is achieved in the processing chamber 201. And the rotation of the wafer 200 by the rotation mechanism 267 is started. The exhaust in the processing chamber 201, the heating and rotation of the wafer 200 are all continued until at least the processing of the wafer 200 is completed.

[0076] [Film forming steps (A1, A2)]

[0077] (Step A1: Reaction Gas Supplying Process)

[0078] In step A1 , while the wafer 200 is heated to a predetermined temperature, at least one of a first process gas and a second process gas is supplied to the wafer 200 , thereby performing a film forming process for growing a film on the surface of the wafer 200 .

[0079] When depositing the SiGe film, the second process gas flows into the gas supply pipe 232c. The flow rate of the second process gas is adjusted by MFC241c, and the gas supply pipe 232c and nozzle 249c are supplied to the process chamber 201. In this state, the valve 243d is opened, and the first process gas flows into the gas supply pipe 232d. The flow rate of the first process gas is adjusted by MFC241d, and the gas supply pipe 232a and nozzle 249a are supplied to the process chamber 201, and the gas is exhausted from the exhaust port 231a together with the second process gas. At this time, the first process gas and the second process gas are supplied to the wafer 200 from the side of the wafer 200. At this time, the valves 243f to 243h may also be opened to supply an inert gas to the process chamber 201 through each of the nozzles 249a to 249c.

[0080] The following are examples of processing conditions in step A1.

[0081] Treatment temperature (specified temperature): 500-650°C, preferably 550-600°C

[0082] Processing pressure: 4-200Pa, preferably 1-120Pa

[0083] First process gas supply flow rate: 0.1 to 5 slm, preferably 0.2 to 3 slm

[0084] Second process gas supply flow rate: 0.1 to 5 slm, preferably 0.2 to 310 slm

[0085] Inert gas supply flow rate (per gas supply pipe): 0-20slm, preferably 0.1-10slm

[0086] Gas supply time: 20 minutes to 60 hours, preferably 30 to 360 minutes.

[0087] Under the above-mentioned processing conditions, by supplying the first processing gas and the second processing gas to the wafer 200, for example, an epitaxial SiGe film as a film containing a predetermined element can be formed as an epitaxial film on the surface of the wafer 200. Alternatively, by supplying only the first processing gas as a raw material gas, a Si film can be formed.

[0088] After step A1 is completed, the valves 243 a and 243 c are closed to stop supplying the first processing gas and the first processing gas into the processing chamber 201 .

[0089] (Step A2: Substrate Pickup Process)

[0090] After step A1, the driving device 268 moves the sub-boat 217b upward to lift the plurality of wafers 200 from the main boat 217a. After a certain time, the driving device 268 moves the sub-boat 217b downward to place the plurality of wafers 200 on the main boat 217a.

[0091] [Specified number of implementations]

[0092] The above-mentioned steps A1 and A2 are looped alternately a predetermined number of times (n times, where n is an integer greater than or equal to 1).

[0093] (Purification process)

[0094] After the film forming process is completed, an inert gas as a purge gas is supplied from each of the nozzles 249a to 249c into the processing chamber 201, and the gas is exhausted from the exhaust port 231a. Thus, the processing chamber 201 is purged, and the gas or by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (post-purification). Then, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (restoration of atmospheric pressure).

[0095] (Boat unloading and wafer release)

[0096] Then, the sealing cover 219 is lowered by the wafer boat elevator 115, and the lower end of the manifold 209 is opened. Then, the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the wafer boat 217 (wafer boat unloading). After the wafer boat is unloaded, the baffle 219s is moved, and the lower end opening of the manifold 209 is sealed by the baffle 219s via the O-ring 220c (baffle closing). After the processed wafer 200 is carried out to the outside of the reaction tube 203, it is taken out from the wafer boat 217 (wafer release).

[0097] (Variation Example)

[0098] Hereinafter, a modification example of the driving device 268 will be described.

[0099] (Variant 1)

[0100] Fig. 9 It is a diagram for explaining a driving device according to Modification 1.

[0101] The driving device 268 includes: an inner shaft 92 which is arranged on the inner side of the fixed cylindrical rotating shaft 225 of the crystal boat table 501 and can rotate relative to the rotating shaft 225; a motor 93 which rotates the inner shaft 92; a rotating plate 90 which is fixed to the inner shaft 92 in such a way that the back side of the second bottom plate 41a faces the upper surface thereof; and a lock 94 which fixes, rotates, and releases the rotation of the inner shaft 92 relative to the motor 93 or the lifting arm 115a.

[0102] When the inner shaft 92 is locked by the lock 94, only the rotating shaft 225 rotates, and the rotation of the inner shaft 92 is fixed. On the other hand, when the inner shaft 92 is unlocked by the lock 94, the rotation of the inner shaft 92 is released, and the rotating shaft 225 and the inner shaft 92 rotate.

[0103] The upper surface of the rotating plate 90 is provided with: a slope 901 whose height continuously changes in the circumferential direction; and a rectangular convex portion 902 that is continuous with the slope 901. The upper surface of the slope 901 is configured to be continuous with the upper surface of the rectangular convex portion 902. In this example, the slope 901 and the rectangular convex portion 902 are also provided at positions that are point-symmetrical with respect to the center of the rotating plate 90.

[0104] The slope 901 of the rotating plate 90 is configured to convert the relative rotation into an up-and-down motion. This relative rotation is achieved by rotating the rotating shaft 225 through the rotating mechanism 267 while the inner shaft 92 is fixed by the lock 94 .

[0105] On the other hand, a follower 96 is provided on the back side of the second bottom plate 41a so as to slide on the slope 901. As the rotating plate 90 and the second bottom plate 41a rotate relative to each other, the follower 96 slides on the slope 901, and the second bottom plate 41a moves upward. Thus, the sub-wafer boat 217b can be raised and lowered, and the wafer 200 can be lifted from the main wafer boat 217a in the reaction chamber 201.

[0106] In addition, the slope 901 is provided on at least one of the second bottom plate 41 a and the rotating plate 90 , and the follower 94 may be provided on the other of the second bottom plate 41 a and the rotating plate 90 .

[0107] Here, after the film forming process (A1) and the substrate picking process (A2), the substrate 200 returns to the same rotation angle as the rotation angle at which the substrate 200 was placed before the substrate picking process (A2). In the film forming process (A1), while the wafer boat (217a, 217b) is rotated, gas is supplied from the gas supply device (232d, 241d, 243d, 232a, nozzle 249a), thereby processing the substrate 200 supported on the wafer boat (217a, 217b); in the substrate picking process (A2), while the substrate 200 is maintained in the processing container 201, the substrate 200 is separated from the first support part 21a sequentially or simultaneously. That is, when the inner shaft 92 is fixed by the lock 94, the inner shaft 92 is rotated relative to the rotation axis 225. For example, when the inner shaft 92 is rotated 90 degrees relative to the rotation axis 225 during the substrate pickup process (A2), after the substrate pickup process (A2), the inner shaft 92 is rotated 270 degrees relative to the rotation axis 225, and the substrate 200 returns to the same angle as the rotation angle at which the substrate 200 was placed before the substrate pickup process (A2). As a result, the area of ​​the substrate 200 that contacts the wafer boat (217a, 217b) is fixed, and the expansion of particles, contamination, and defects can be suppressed. In addition, since the angle deviation is difficult to accumulate even if multiple sub-substrate pickup processes (A2) are performed, it is not necessary to align the notches of other paths when the processed substrate 200 is stored in the substrate container.

[0108] (Variant 2)

[0109] Fig.10 2 is a diagram for explaining a driving device of Modification 2. In the driving device 268 of Modification 2, an inner shaft 92 capable of moving up and down relative to the rotating shaft 225 is provided inside the fixed cylindrical rotating shaft 225 of the wafer boat stage 501, and a motor 1011 for rotating and moving the inner shaft 92 up and down is provided. On the other hand, a main motor 1022 for rotating the rotating shaft 225 is provided in the rotating device 265.

[0110] A feed screw mechanism 1000 is provided on the inner shaft 92. The feed screw mechanism 1000 includes an external thread 1001 and an internal thread 1002, one of which is fixed to the inner shaft 92, and the other of which is rotated by the motor 1001. Thus, the rotating plate 90 fixed to the inner shaft 92 can be pushed up, thereby forming a structure in which the second bottom plate 41a can be pushed up. On the way of the inner shaft 92, a million guides 1030 are provided between the rotating shaft 225 and the inner shaft 92. A bellows 1032 for maintaining the airtightness of the inner shaft 92 is provided on the lower surface of the part 1033 provided between the wafer boat stage 501 and the rotating shaft 225 and the rotating plate 90.

[0111] The main motor 1022 of the rotating device 265 is directly connected to the rotating shaft 225 without using a transmission. In addition, the motor 1011 of the driving device 268 is directly connected to the other of the external thread 1001 and the internal thread 1002 without using a transmission. The rotating axes of the main motor 1022 and the motor 1011 are arranged coaxially.

[0112] Since the rotation and pushing up of the inner shaft 92 are controlled by the motor 1011, the controllability is good and the positioning accuracy is excellent. In addition, there is an effect of reducing particles.

[0113] (Variant 3)

[0114] Fig.11 A diagram illustrating a drive device according to a third modification. Figure 5 Each of the plurality of pins 503 is provided to be movable up and down by an actuator 1101 such as an air cylinder. Fig.11 The other components and Figure 5 and Figure 6 The structure is the same, and repeated description is omitted.

[0115] That is, the driving device 268 is configured to include: a plurality of pins 503 that penetrate the sealing cover 219 and are movable up and down while maintaining the airtightness of the sealing cover 219 through the bellows 510; and a plurality of actuators 1101 that are provided one-to-one with the plurality of pins 503 and are driven synchronously. The actuators 1101 are in contact with or fixed to the upper side of the lifter arm 115a.

[0116] As mentioned above, although this disclosure was specifically described based on an Example, this disclosure is not limited to the said embodiment and an Example, It is a matter of course that various changes can be implemented.

[0117]

Explanation of symbols

[0118] 200: Substrate (wafer)

[0119] 201: Processing room

[0120] 217: Crystal Boat

[0121] 217a: Main Crystal Boat

[0122] 217b: Deputy Crystal Boat

[0123] 267: Rotating mechanism

[0124] 268: Drive device

[0125] 21: First support part

[0126] 22: Second support part

[0127] 121: Controller (Controller)

Claims

1. A substrate processing device, characterized in that: have: A wafer boat having at least one first supporting portion relative to a substrate; A processing container, which accommodates the wafer boat and processes the substrate carried therein; A gas supply device for supplying a processing gas into the processing container; A plurality of second support parts, which are arranged to be movable in the vertical direction relative to the wafer boat; A rotating device having a rotating shaft capable of rotatably supporting the wafer boat; a driving device capable of relatively lifting the second supporting portion upward to cause the substrate to float from at least one of the first supporting portions; as well as A controller capable of controlling the following steps a and b to be performed a specified number of times to form a film on the above-mentioned substrate. In step a, gas is supplied from the above-mentioned gas supply device while the above-mentioned wafer boat is rotated to process the above-mentioned substrate supported on the above-mentioned wafer boat; in step b, the above-mentioned substrate is separated from the above-mentioned first supporting part while the above-mentioned substrate is maintained in the above-mentioned processing container.

2. The substrate processing device according to claim 1, characterized in that: It also has a sub-crystal boat, which has: a plurality of movable pillars each provided with the above-mentioned second supporting part; and a second connecting part that fixes the above-mentioned plurality of movable pillars to each other, and the sub-crystal boat is arranged to be movable along the vertical direction within a range limited at the upper end and the lower end relative to the above-mentioned crystal boat.

3. The substrate processing device according to claim 2, characterized in that: The wafer boat comprises: a plurality of fixing pillars extending in a direction substantially perpendicular to the substrate and each of which is provided with the first supporting portion; and a first coupling portion for fixing the plurality of fixing pillars to each other. The first joint portion includes a first bottom plate, and the first bottom plate fixes the vicinities of the lower ends of the plurality of fixing pillars to each other. The second connecting portion includes a second bottom plate that fixes the vicinities of the lower ends of the plurality of movable support columns to each other and has a shape that can be stably placed on the first bottom plate.

4. The substrate processing device according to claim 3, characterized in that: The number of the plurality of movable supports is N, where N is an integer greater than 3, the number of the plurality of fixed supports is N-1 or N+1, the second base plate is a plate having at least N vertices, and the plurality of movable supports are connected to the N vertices respectively.

5. The substrate processing device according to claim 4, characterized in that: A notch is also provided, which is provided on one side of the second bottom plate and into which the plurality of fixing pillars are inserted.

6. The substrate processing device according to claim 2, characterized in that: The movable support is disposed on an outer periphery of the substrate supported by the wafer boat so as to be detachable from and contactable to the driving device and rotatable together with the wafer boat.

7. The substrate processing apparatus according to claim 1, wherein: The first supporting portion is disposed at a position closer to the center of the substrate than the second supporting portion.

8. The substrate processing device according to claim 3, characterized in that: Also available: A cover, which is disposed at the lower end of the processing container and closes the opening for taking and placing the substrate; a lift arm that drives the rotating device and the cover up and down; and an elastic support member disposed between the lift arm and the cover to apply force to the cover upward, The driving device includes a plurality of pins, and when the elastic support member is compressed beyond a predetermined value, the plurality of pins bulge upward relative to the cover to push up at least one of the plurality of movable pillars.

9. The substrate processing device according to claim 8, characterized in that: The above-mentioned multiple pins are arranged to penetrate the above-mentioned cover while maintaining the airtightness of the above-mentioned cover through a bellows, and one end of each of the outer sides of the above-mentioned processing container is in contact with or fixed to the above-mentioned elevator arm, and the other end of the inner side of the above-mentioned processing container is constructed to be able to push up the above-mentioned second bottom plate, and the above-mentioned multiple movable pillars are lifted together.

10. The substrate processing apparatus according to claim 9, wherein: The rotating device is fixed to the lift arm, and a seal is formed between the rotating device and the cover by a second bellows provided so as to surround the rotating shaft.

11. The substrate processing apparatus according to claim 9, wherein: A circular plate-shaped wafer boat stage is further provided, the wafer boat stage fixes the rotation axis and supports the wafer boat thereon, The wafer boat stage has: a plurality of openings, which are arranged at positions corresponding to the plurality of pins; and a push rod, which is suspended and supported in the plurality of openings so as to be movable up and down. The second bottom plate is pushed up by the push rod pushed up by the plurality of pins.

12. The substrate processing apparatus according to claim 3, characterized in that: The driving device comprises: an inner shaft arranged inside the cylindrical rotating shaft and capable of rotating relative to the rotating shaft; a motor for rotating the inner shaft; and a rotating plate fixed to the inner shaft in a manner facing the second bottom plate. A slope whose height continuously changes in the circumferential direction is provided on at least one of the second bottom plate or the rotating plate, so as to be capable of converting the relative rotation into an up-and-down movement.

13. The substrate processing apparatus according to claim 12, wherein: A follower that slides relative to the slope is provided on the other of the second bottom plate and the rotating plate.

14. The substrate processing apparatus according to claim 12, wherein: A lock is further provided, the lock being configured to fix and release the rotation of the inner shaft relative to the motor. The relative rotation is achieved by rotating the rotating shaft by the rotating device while the inner shaft is fixed.

15. The substrate processing apparatus according to claim 1, wherein: After the step b, the substrate is returned to the same rotation angle as the rotation angle at which the substrate was placed before the step b.

16. The substrate processing apparatus according to claim 3, characterized in that: The driving device comprises: an inner shaft which is arranged inside the cylindrical rotating shaft and can move up and down relative to the rotating shaft; a feed screw mechanism whose external thread and internal thread are fixed to the inner shaft; and a motor which rotates the other of the external thread and the internal thread. The inner shaft is configured to be able to push up the first coupling portion.

17. The substrate processing apparatus according to claim 16, wherein: The main motor included in the rotating device and the motor included in the driving device are coaxially arranged and directly connected to the rotating shaft and the other of the male and female threads without using a transmission.

18. The substrate processing apparatus according to claim 1, wherein: A cover is also provided, the cover is provided at the lower end of the processing container and closes the opening for taking in and placing the substrate. The driving device includes: a plurality of pins, which penetrate the cover and are movable up and down while maintaining the airtightness of the cover by a bellows; and a plurality of actuators, which are arranged one-to-one with the plurality of pins and driven synchronously.

19. A method for manufacturing a semiconductor device, characterized in that: The following steps a and b are performed a predetermined number of times to form a film on the substrate. In step a, a wafer boat carrying a substrate is housed in a processing container of a substrate processing apparatus, and a gas is supplied from a gas supply device while rotating the wafer boat to process the substrate supported by the wafer boat. In step b, the substrate is separated from the first supporting portion while the substrate is maintained in the processing container. The substrate processing device comprises: The wafer boat has at least one first supporting portion relative to one of the substrates; The processing container receives the wafer boat and processes the substrate therein; The gas supply device supplies the processing gas into the processing container; A plurality of second support parts, which are arranged to be movable in the vertical direction relative to the wafer boat; A rotating device having a rotating shaft capable of rotatably supporting the wafer boat; as well as The driving device can lift the second supporting portion relatively upward to float the substrate from at least one of the first supporting portions.

20. A program, characterized in that The computer causes the substrate processing apparatus to execute the following steps: performing the following steps a and b a predetermined number of times to form a film on the substrate, In step a, a wafer boat carrying a substrate is housed in a processing container of a substrate processing apparatus, and a gas is supplied from a gas supply device while rotating the wafer boat to process the substrate supported by the wafer boat. In step b, the substrate is separated from the first support portion while the substrate is maintained in the processing container. The substrate processing device comprises: The wafer boat has at least one first supporting portion relative to one of the substrates; The processing container receives the wafer boat and processes the substrate therein; The gas supply device supplies the processing gas into the processing container; A plurality of second support parts, which are arranged to be movable in the vertical direction relative to the wafer boat; A rotating device having a rotating shaft capable of rotatably supporting the wafer boat; as well as The driving device can lift the second supporting portion relatively upward to float the substrate from at least one of the first supporting portions.

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