Inductor element and integrated circuit

Abstract

The present invention provides an inductor element capable of suppressing an increase in size. An inductor element is provided with: an inductor wiring having an interruption portion at at least one location; a pair of external terminals respectively connected to one side portion and the other side portion located on both sides of the interruption portion in the inductor wiring, and exposed to the outside; at least one inductor variable resistance unit provided in the interruption unit; and at least one variable resistance terminal connected to the inductor variable resistance unit and exposed to the outside. The inductor variable resistance unit connects the one side portion and the other side portion, and changes a resistance value between the one side portion and the other side portion.

Description

Technical Field

[0001] The present disclosure relates to an inductor element and an integrated circuit including the inductor element. Background Art

[0002] In a power transmission system such as wireless power supply, it is necessary to expand the area where power can be transmitted. In order to expand the area where power can be transmitted, for example, beamforming is performed by changing the phase of a phase shifter provided in the power transmission system. In order to change the phase of the phase shifter, for example, it is considered to change the impedance of an inductor element provided in the phase shifter.

[0003] In order to change the impedance of the inductor element, for example, it is conceivable to mount a variable inductor as an inductor element in a phase shifter as disclosed in Patent Documents 1 to 3. By changing the inductance of the variable inductor, the impedance of the variable inductor can be changed.

[0004] The variable inductor disclosed in Patent Document 1 includes a plurality of coil patterns and a plurality of switches connected to the plurality of coil patterns via external electrodes. The combination of coil patterns through which current flows is changed by turning each switch on and off, thereby setting the inductance of the variable inductor to a desired value.

[0005] The variable inductor disclosed in Patent Document 2 includes a plurality of loop-shaped wiring layers having open ends and field effect transistors as switches for opening and short-circuiting the open ends of the wiring layers. The inductance of the variable inductor is determined by the combination of opening and short-circuiting the open ends of the wiring layers.

[0006] The variable inductor disclosed in Patent Document 3 includes two inductors and a switch that makes the connection between the two inductors conductive or non-conductive. The inductance of the variable inductor is determined by turning the switch on and off.

[0007] Patent Document 1: Japanese Patent No. 6701923

[0008] Patent Document 2: Japanese Patent Application Laid-Open No. 8-162331

[0009] Patent Document 3: Japanese Patent Application Publication No. 2010-272815

[0010] In the variable inductors disclosed in Patent Documents 1 to 3, the number of turns and line length of the coil that functions according to the on / off of the switch changes. Therefore, the variable inductor is large-scale. The variable inductor can be miniaturized by reducing the number of coils provided in the variable inductor. However, in this case, in order to increase the variable range of inductance, the variable inductor needs to be configured in multiple stages. Therefore, it is inevitable that the overall size of the device provided with the variable inductor is large-scale. Summary of the invention

[0011] An object of the present disclosure is to provide an inductor element capable of suppressing enlargement.

[0012] An inductor element according to one embodiment of the present disclosure includes:

[0013] The inductor wiring has a discontinuity at at least one location;

[0014] a pair of external terminals connected to one side portion and the other side portion located on both sides of the interrupted portion in the inductor wiring, respectively, and exposed to the outside;

[0015] at least one inductor variable resistor section disposed at the interruption section; and

[0016] at least one variable resistance terminal connected to the variable resistance portion of the inductor and exposed to the outside,

[0017] The inductor variable resistor portion connects the one side portion and the other side portion to change the resistance value between the one side portion and the other side portion.

[0018] According to the present disclosure, it is possible to provide an inductor element capable of suppressing an increase in size. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 1 is a functional block diagram of a phased array antenna including the inductor element of the present disclosure.

[0020] Figure 2 This is an equivalent circuit diagram of the inductor element according to the first embodiment of the present disclosure.

[0021] Figure 3 It is a schematic plan view of the inductor element according to the first embodiment of the present disclosure.

[0022] Figure 4 Yes means Figure 3 Schematic cross-sectional view of section A-A.

[0023] Figure 5 This is a schematic cross-sectional view for explaining the method for manufacturing the inductor element according to the first embodiment of the present disclosure.

[0024] Figure 6 This is a schematic cross-sectional view for explaining the method for manufacturing the inductor element according to the first embodiment of the present disclosure.

[0025] Figure 7 This is a schematic cross-sectional view for explaining the method for manufacturing the inductor element according to the first embodiment of the present disclosure.

[0026] Figure 8 It is a schematic plan view of an inductor element according to a second embodiment of the present disclosure.

[0027] Fig. 9 It is a schematic plan view of an inductor element according to a third embodiment of the present disclosure.

[0028] Fig.10 The inductor element according to the fourth embodiment of the present disclosure is Figure 3 Schematic cross-sectional view of the cross-section corresponding to the A-A cross-section.

[0029] Fig.11 is a modification of the inductor element according to the fourth embodiment of the present disclosure. Figure 3 Schematic cross-sectional view of the cross-section corresponding to the A-A cross-section.

[0030] Fig.12 It is a schematic plan view of an inductor element according to a fifth embodiment of the present disclosure.

[0031] Fig.13 1 is a schematic top view of an integrated circuit according to a sixth embodiment of the present disclosure.

[0032] Fig.14 Yes means Fig.13 Schematic cross-sectional view of the BB section.

[0033] Fig.15 : is an equivalent circuit diagram of an integrated circuit according to a sixth embodiment of the present disclosure.

[0034] Fig.16 is a modified example of the integrated circuit according to the sixth embodiment of the present disclosure. Fig.13 A schematic cross-sectional view of the cross-section corresponding to the BB cross-section.

[0035] Fig.17 is an inductor element according to a seventh embodiment of the present disclosure. Figure 3 Schematic cross-sectional view of the cross-section corresponding to the A-A cross-section.

[0036] Fig.18 is an inductor element according to an eighth embodiment of the present disclosure. Figure 3 Schematic cross-sectional view of the cross-section corresponding to the A-A cross-section.

[0037] Description of Reference Numerals

[0038] 5…capacitor element; 6…integrated circuit; 10…inductor element; 30…inductor variable resistance portion; 31…gate electrode; 32…oxide film; 321…one main surface; 33…channel layer; 332…doped region; 33A…interface; 33B…interface; 33C…side; 40…inductor wiring; 41…one side portion; 42…other side portion; 43…interruption portion; 51…gate wiring portion (variable resistance terminal); 52…source wiring portion (external terminal); 53…drain wiring portion (external terminal); 71…intervening insulating layer; 711…through hole; 712…through hole; 72…covering insulating layer; 81…first variable resistance portion; 82…second variable resistance portion; 101…thickness direction; 102…long side direction (opposite direction). DETAILED DESCRIPTION

[0039] Below, an example of the present disclosure is described according to the accompanying drawings. In addition, the following description is essentially illustrative and is not intended to limit the present disclosure, its application, or its use. In addition, the drawings are schematic, and the ratios of various dimensions may not be consistent with the actual ratios. In addition, in the following description, terms indicating specific directions or positions are used as needed (for example, terms including "up", "down", "right", "left", "front", and "back"). However, the use of terms indicating specific directions or positions is used to facilitate the understanding of the present disclosure with reference to the accompanying drawings, and the technical scope of the present disclosure is not limited according to the meaning of these terms.

[0040] <First embodiment>

[0041] Figure 1 1 is a functional block diagram of a phased array antenna including the inductor element of the present disclosure.

[0042] like Figure 1 As shown, the phased array antenna includes a microwave transmitter 1, a power distributor 2, a plurality of phase shifters 3, and a plurality of antennas 4. The microwave transmitter 1 transmits microwaves to the power distributor. The power distributor 2 distributes the microwaves input from the microwave transmitter 1 into a plurality of microwaves, and outputs them to the plurality of phase shifters 3 respectively. The plurality of phase shifters 3 respectively change the phase of the microwaves input from the power distributor 2. The microwaves output from the phase shifters 3 are transmitted to the outside via the antenna 4.

[0043] Each of the plurality of phase shifters 3 includes an integrated circuit 6. The integrated circuit 6 includes an inductor element 10 and a control unit 7. The inductor element 10 will be described in detail later. The control unit 7 is composed of a well-known electronic circuit and controls the resistance value of the inductor variable resistor unit 30 included in the inductor element 10.

[0044] In addition, the device to which the phase shifter 3 is applied is not limited to the phased array antenna. Figure 13 to Figure 16) is not limited to the phase shifter 3. The number of inductor elements 10 provided in the integrated circuit 6 is not limited to one.

[0045] Figure 2 : is an equivalent circuit diagram of the inductor element of the first embodiment of the present disclosure. Figure 2 As shown in (a), the inductor element 10 includes an inductor wiring 40 and an inductor variable resistor section 30. The inductor wiring 40 is divided into two parts (a side part 41 and a side part 42) by a discontinuity 43. That is, the side part 41 and the other side part 42 of the inductor wiring 40 are located on both sides of the discontinuity 43. The inductor variable resistor section 30 is provided at the discontinuity 43. The inductor variable resistor section 30 is connected to the side part 41 and the other side part 42. As a result, the side part 41 and the other side part 42 are conductive. As shown in FIG. Figure 2 As shown in (b), one side portion 41, the inductor variable resistor section 30, and the other side portion 42 constitute one inductor.

[0046] The inductor variable resistor section 30 changes the resistance value with respect to the current flowing in the inductor wiring 40. In the first embodiment, as Figure 2 As shown in (c), the inductor variable resistor section 30 is a metal-oxide-semiconductor field-effect transistor (MOSFET).

[0047] Figure 3 It is a schematic plan view of the inductor element according to the first embodiment of the present disclosure. Figure 4 Yes means Figure 3 Schematic cross-sectional view of section A-A.

[0048] like Figure 3 and Figure 4 As shown in FIG. 1 , the inductor element 10 includes a substrate 20, an inductor variable resistor portion 30 stacked on the substrate 20, an inductor wiring 40 stacked on the inductor variable resistor portion 30, and a wiring portion 50. The direction in which the substrate 20, the inductor variable resistor portion 30, the inductor wiring 40, and the wiring portion 50 are stacked is a thickness direction 101 of the inductor element 10. In other words, the thickness direction 101 can also be said to be the thickness direction of each of the substrate 20, the inductor variable resistor portion 30, the inductor wiring 40, and the wiring portion 50.

[0049] In the first embodiment, the substrate 20 is plate-shaped. The main surface 21 of the substrate 20 is a rectangle extending in the long side direction 102 and the short side direction 103. The long side direction 102 and the short side direction 103 are orthogonal to the thickness direction 101. The long side direction 102 is a direction parallel to the long side of the rectangle as the shape of the main surface 21. The short side direction 103 is a direction parallel to the short side of the rectangle as the shape of the main surface 21. The long side direction 102 and the short side direction 103 are orthogonal to each other. In the first embodiment, the substrate 20 is formed of silicon (Si).

[0050] The inductor variable resistor section 30 will be described in detail later.

[0051] As described above, the inductor wiring 40 is interrupted into two parts at the interruption portion 43. One of the two parts is the one side part 41. The other of the two parts is the other side part 42. The interruption portion 43 refers to a space between the one side part 41 and the other side part 42. The one side part 41 has an electrode 411. The other side part 42 has an electrode 421. Figure 3 and Figure 4 , one side portion 41 and the other side portion 42 are schematically depicted as straight lines. However, the one side portion 41 and the other side portion 42 may be in any shape that functions as an inductor, such as a spiral shape, a meander shape, or a spiral shape. The inductor wiring 40 is made of a conductive material. The conductive material is, for example, gold (Au), silver (Ag), nickel (Ni), copper (Cu), aluminum (Al), or an alloy or compound containing these metals. In the first embodiment, the inductor wiring 40 is made of copper (Cu).

[0052] The inductor variable resistor section 30 is a MOSFET, and includes a gate electrode 31 , an oxide film 32 , and a channel layer 33 .

[0053] The gate electrode 31 is stacked on the main surface 21 of the substrate 20. Figure 3 As shown in FIG. 1 , when viewed from the thickness direction 101, the gate electrode 31 includes a region overlapping with the discontinuity 43 of the inductor wiring 40. That is, when viewed from the top, the gate electrode 31 is located at a position overlapping with the discontinuity 43 of the inductor wiring 40. Figure 4 As shown, a portion of the gate electrode 31 is opposed to the discontinuity 43 in the thickness direction 101 via the oxide film 32 and the channel layer 33. Figure 3 As shown, the gate electrode 31 extends from the region overlapping with the interruption portion 43 in a plan view in the short-side direction 103. The gate electrode is a structure in which impurities are injected into polycrystalline silicon (Poly-Si) at a high concentration. In addition, the gate electrode is not limited to polycrystalline silicon (Poly-Si), for example, it can be composed of a conductor such as copper (Cu), silver (Ag), platinum (Pt), or gold (Au).

[0054] like Figure 4 As shown, the oxide film 32 has one main surface 321 and another main surface 322. The other main surface 322 is a surface on the opposite side of the one main surface 321 in the thickness direction 101. The oxide film 32 is stacked on the substrate 20 so that the one main surface 321 is in contact with the main surface 21 of the substrate 20. The one main surface 321 of the oxide film 32 covers the gate electrode 31. That is, the gate electrode 31 is provided on the one main surface 321 side of the oxide film 32 in contact with the oxide film 32.

[0055] The oxide film 32 includes a High-k material. In the first embodiment, the oxide film 32 is entirely made of hafnium oxide (HfO) which is a High-k material. 2 ). The oxide film 32 may be made of a High-k material other than hafnium oxide. A portion of the oxide film 32 may be made of a High-k material. The oxide film 32 may be made of a High-k material other than hafnium oxide. 2 ) and other materials with high dielectric constants.

[0056] The channel layer 33 is stacked on the other main surface 322 of the oxide film 32. In other words, the channel layer 33 is provided on the other main surface 322 side of the oxide film 32 so as to be in contact with the oxide film 32.

[0057] In the first embodiment, the channel layer 33 is entirely made of amorphous silicon. A portion of the channel layer 33 may be made of amorphous silicon. The material constituting the channel layer 33 is not limited to amorphous silicon, and may be, for example, a metal oxide semiconductor.

[0058] The channel layer 33 has a non-doped region 331 and a doped region 332. The doped region 332 is a region in the channel layer 33 where a high concentration impurity region is formed by doping impurities by a known method. The non-doped region 331 is a region in the channel layer 33 where no impurities are doped. When the channel layer 33 is an N-type semiconductor, the impurities are elements with an atomic valence of 5, such as phosphorus and arsenic, and when the channel layer 33 is a P-type semiconductor, the impurities are elements with an atomic valence of 3, such as boron and aluminum.

[0059] like Figure 3 and Figure 4 As shown, in a plan view, the doped region 332 overlaps the entire interruption portion 43, a portion of the one side portion 41, and a portion of the other side portion 42. In the first embodiment, a portion of the one side portion 41 is an end portion of the one side portion 41 on the opposite side to the electrode 411. In the first embodiment, a portion of the other side portion 42 is an end portion of the other side portion 42 on the opposite side to the electrode 421. Thus, the doped region 332 contacts both the one side portion 41 and the other side portion 42. Therefore, the one side portion 41 and the other side portion 42 are connected to each other via the doped region 332.

[0060] In a plan view, the doped region 332 overlaps with the gate electrode 31. The doped region 332 faces the gate electrode 31 in the thickness direction 101 via the oxide film 32.

[0061] The inductor wiring 40 and the wiring portion 50 are stacked on the channel layer 33. The inductor wiring 40 and the wiring portion 50 are exposed to the outside relative to the substrate 20 and the inductor variable resistance portion 30. The inductor wiring 40 and the wiring portion 50 are provided on the opposite side of the oxide film 32 in the thickness direction 101 relative to the channel layer 33 and are in contact with the channel layer 33. In addition, since the inductor wiring 40 and the wiring portion 50 are formed integrally, the boundary is not clear. For convenience, Figure 3 In the drawings showing both the inductor wiring 40 and the wiring portion 50 , the boundary between the inductor wiring 40 and the wiring portion 50 is indicated by a solid line.

[0062] like Figure 3 As shown, the wiring portion 50 includes a gate wiring portion 51 , a source wiring portion 52 , and a drain wiring portion 53 .

[0063] The gate wiring portion 51 is in contact with the gate electrode 31 via the through hole 60 that penetrates the non-doped region 331 of the channel layer 33 and the oxide film 32 in the thickness direction 101. That is, the gate wiring portion 51 is electrically connected to the gate electrode 31. The gate wiring portion 51 is an example of a variable resistance terminal.

[0064] A portion of source wiring portion 52 is covered by electrode 411 of one side portion 41 of inductor wiring 40 . Thus, source wiring portion 52 and one side portion 41 are electrically connected.

[0065] A portion of drain wiring portion 53 is covered by electrode 421 of other side portion 42 of inductor wiring 40. Thus, drain wiring portion 53 is electrically connected to other side portion 42. Source wiring portion 52 and drain wiring portion 53 are an example of a pair of external terminals.

[0066] The inductor variable resistor section 30 as a MOSFET functions as follows: The gate electrode 31 functions as a gate of the MOSFET. The one side portion 41 functions as a source of the MOSFET. The other side portion 42 functions as a drain of the MOSFET.

[0067] In the first embodiment, the inductor variable resistor section 30 as a MOSFET is a normally-on type. In order to make the inductor variable resistor section 30 a normally-on type, the Fermi level of the gate electrode 31 and the channel material can be adjusted. For example, the impurity doping type and doping amount can be adjusted. In addition, for example, the gate electrode 31 can be made of aluminum gallium nitride (AlGaN) and the channel layer 33 can be made of gallium nitride (GaN). In the first embodiment, a low resistance section is formed in the doped region 332. The low resistance section is, for example, a channel layer 33 having 10 －2 The portion with a resistivity of Ω·cm or less.

[0068] Here, the low resistance portion refers to a portion having a resistivity sufficiently lower than that of a semiconductor substrate (for example, a substrate 20 formed of silicon). For example, the resistivity of the substrate 20 formed of silicon is 10 －3 Ω·cm. If the resistivity is 1000 times lower than that of the substrate having the resistivity, most of the current flows in the low resistance portion. In summary, as described above, the low resistance portion may be a substrate having 10 －2 In the first embodiment, 10 20 cm 3 For example, when the impurity is phosphorus, the low resistance portion has 10 －3 In addition, for example, when the impurity is boron, the low resistance portion has a resistivity of about 5×10 －3 Resistivity of about Ω·cm.

[0069] Since the low resistance portion is formed in the doping region 332, current flows in the doping region 332 even when no voltage is applied between the gate and the source. That is, even when no voltage is applied between the gate electrode 31 and the one side portion 41, current flows between the one side portion 41 and the other side portion 42 via the doping region 332. The greater the voltage applied between the gate and the source, the greater the current flows in the doping region 332. That is, the greater the voltage applied between the gate electrode 31 and the one side portion 41, the smaller the resistance value of the low resistance portion formed in the doping region 332. That is, the inductor variable resistance portion 30 functions as a variable resistor whose resistance value changes according to the magnitude of the voltage applied between the gate electrode 31 and the one side portion 41.

[0070] Figure 5 This is a schematic cross-sectional view for explaining the method for manufacturing the inductor element according to the first embodiment of the present disclosure. Figure 6 This is a schematic cross-sectional view for explaining the method for manufacturing the inductor element according to the first embodiment of the present disclosure. Figure 7 This is a schematic cross-sectional view for explaining the method for manufacturing the inductor element according to the first embodiment of the present disclosure.

[0071] Below, refer to Figure 5 to Figure 7 , a method for manufacturing the inductor element 10 will be described.

[0072] like Figure 5 As shown, on the prepared substrate 20, a gate electrode 31 is stacked. A film is formed on the substrate 20 by sputtering. A resist is applied to the film. The resist is photoetched into a pattern having the same shape as the gate electrode 31 described above. Thereafter, the resist is removed by etching. Through the above, a gate electrode 31 of a desired shape is formed.

[0073] Next, if Figure 6 As shown, an oxide film 32 is formed on the surface of the substrate 20 on which the gate electrode 31 is formed. The oxide film 32 is formed by, for example, CVD (chemical vapor deposition method).

[0074] Next, if Figure 7 As shown, a channel layer 33 is formed on the oxide film 32. The channel layer 33 is formed, for example, by CVD. A resist is applied to the channel layer 33. The resist is patterned into a region to be a doped region 332 by photolithography. Next, P-type and N-type impurities are doped at a high concentration. At this time, the impurities are doped into the doped region 332 not covered by the resist, and are not doped into the non-doped region 331 covered by the resist. Thereafter, the resist is stripped off by etching. Thus, the channel layer 33 is divided into the doped region 332 doped with impurities and the non-doped region 331 not doped with impurities. Thereafter, a through hole 60 is formed in the channel layer 33 (see Figure 3 ).

[0075] Next, if Figure 3 As shown, the inductor wiring 40 and the wiring portion 50 are formed on the channel layer 33. The wiring portion 50 forms a metal film (a copper film in the first embodiment) on the channel layer 33 by sputtering (e.g., seed sputtering). A resist is applied on the metal film. The resist is photoetched into a pattern having the same shape as the inductor wiring 40 and the wiring portion 50 described above. Next, electric field plating is performed on the pattern and on the resist other than the pattern. In addition, Figure 3 The plating is not shown. After that, the resist is removed by etching. Thus, the inductor wiring 40 and the wiring portion 50 having a desired shape and covered with the plating layer are formed. In addition, the inductor wiring 40 and the wiring portion 50 may be formed simultaneously as described above, or may be formed separately.

[0076] According to the first embodiment, one coil is formed by the inductor wiring 40 and the inductor variable resistor section 30. By changing the resistance value of the inductor variable resistor section 30, the impedance of the inductor element 10 can be changed. That is, in order to change the impedance of the inductor element, it is not necessary to prepare a plurality of coils to switch the conduction and non-conduction of a part or all of the plurality of coils. Therefore, the impedance of the inductor element 10 can be changed without changing the number of turns of the coil and the line length. As a result, the size of the inductor element 10 can be suppressed. In addition, since the impedance can be changed by using one inductor element 10, it is not necessary to make the inductor element 10 into multiple stages in the phase shifter 3.

[0077] In the variable inductor disclosed in Patent Document 1, the coil pattern is connected via an external electrode. Therefore, there is a concern that parasitic capacitance is generated between the external electrode and the coil pattern. According to the first embodiment, the inductor variable resistance unit 30 and the inductor wiring 40 are not directly connected via an external electrode or the like. Therefore, the generation of parasitic capacitance can be reduced.

[0078] When the inductor variable resistor section 30 is a MOSFET as in the first embodiment, the resistance can be continuously controlled according to the voltage applied to the gate electrode 31 of the MOSFET. Thus, the impedance of the inductor element 10 can be controlled to a desired value. By using a MOSFET as the inductor variable resistor section 30, the inductor element 10 can be miniaturized.

[0079] In the first embodiment, the hafnium oxide (HfO 2 ) and other high-k materials (such as hafnium oxide) have a high dielectric constant. Therefore, it is possible to increase the number of carriers excited by the channel layer.

[0080] As in the first embodiment, by using a metal oxide semiconductor such as indium tin oxide (ITO) as the material of the channel layer 33 and providing it at a desired position (doping region 332), the channel layer 33 can be formed without doping. Thus, the channel layer 33 can be formed at low cost.

[0081] According to the first embodiment, the channel layer 33 includes a metal. Therefore, it is possible to suppress the formation of a low dielectric constant layer between the oxide film 32 including, for example, a High-k material and the channel layer 33. As a result, the mobility of carriers in the channel layer 33 can be improved.

[0082] According to the first embodiment, the channel layer 33 is entirely made of amorphous silicon, and P-type and N-type impurities are doped at high concentrations in the doped region 332. Therefore, a low-resistance portion having low resistance can be easily formed in the doped region 332.

[0083] According to the first embodiment, the doped region 332 is in contact with both the one side portion 41 and the other side portion 42. Therefore, a low resistance portion can be easily formed between the one side portion 41 and the other side portion 42.

[0084] According to the first embodiment, the inductor variable resistor section 30 as a MOSFET is a normally-on type. Therefore, the inductor wiring 40 can be configured so that a current flows between the one side portion 41 and the other side portion 42 when no voltage is applied to the gate electrode 31. As the voltage applied to the gate electrode 31 increases, the resistance between the one side portion 41 and the other side portion 42 can increase.

[0085] According to the first embodiment, the impedance of the inductor element 10 can be changed by changing the resistance of the inductor variable resistor portion 30 in one inductor element 10. That is, according to the first embodiment, since the integrated circuit does not need to have a plurality of inductors as in the variable inductors (variable inductors having a plurality of inductors) disclosed in Patent Documents 1 to 3, the integrated circuit 6 can be miniaturized.

[0086] In the variable inductors disclosed in Patent Documents 1 to 3, the inductance of the variable inductor is adjusted by changing the number of turns of the coil that functions according to the on / off of the switch and the line length, thereby changing the impedance. In contrast, in the variable inductor of the first embodiment, the impedance is changed by adjusting the resistance value of the inductor variable resistor unit 30 without changing the inductance of the inductor wiring 40. In applications such as phase shifters provided in power transmission systems, the effect on performance caused by the increase in resistance value is relatively small, and variable inductors such as the first embodiment are effective. This is also true in the second to sixth embodiments described later.

[0087] The inductor element 10 may include a plurality of interrupted portions 43. In this case, an inductor variable resistor portion 30 may be provided corresponding to each of the plurality of interrupted portions 43. That is, the inductor element 10 may include a plurality of inductor variable resistor portions 30.

[0088] Depending on the material constituting the channel layer 33 , the channel layer 33 may not have the doped region 332 . In other words, the channel layer 33 may not be doped with impurities. For example, when the channel layer 33 is made of a metal oxide semiconductor, the channel layer 33 may not have the doped region 332 .

[0089] At least one of the source wiring portion 52 and the drain wiring portion 53 and the gate wiring portion 51 may also be formed integrally. Figure 3As shown by the dotted line, the drain wiring portion 53 may be connected to the gate wiring portion 51. In addition, for example, the source wiring portion 52 may be connected to the gate wiring portion 51. In addition, as shown in the second embodiment described later, in the case of a structure in which a plurality of gate wiring portions 51 are provided, at least one of the source wiring portion 52 and the drain wiring portion 53 and at least one of the gate wiring portions 51 may be formed integrally.

[0090] <Second embodiment>

[0091] Figure 8 1 is a schematic top view of an inductor element according to a second embodiment of the present disclosure. The inductor element 10A according to the second embodiment is different from the inductor element 10 according to the first embodiment in that the inductor element 10A includes a plurality of inductor variable resistors 30A, 30B, 30C, and 30D connected in series with each other. The differences from the first embodiment will be described below. The same reference numerals are given to the common points with the inductor element 10 according to the first embodiment, and the description thereof is omitted in principle, but will be described as necessary.

[0092] like Figure 8 As shown, the inductor element 10A includes four inductor variable resistor sections 30A, 30B, 30C, and 30D. The four inductor variable resistor sections 30A, 30B, 30C, and 30D are MOSFETs, respectively, similarly to the first embodiment, and include a gate electrode 31, an oxide film 32, and a channel layer 33. The inductor element 10A includes four gate electrodes 31, one oxide film 32, and one channel layer 33. One channel layer 33 has one non-doped region 331 and four doped regions 332. Each of the four gate electrodes 31 and each of the four doped regions 332 are provided corresponding to the four inductor variable resistor sections 30A, 30B, 30C, and 30D. One oxide film 32 and one non-doped region 331 are shared by the four inductor variable resistor sections 30A, 30B, 30C, and 30D.

[0093] The inductor wiring 40 is divided into five parts (a side part 41, another side part 42, and three intervening parts 44) by four interruptions 43. The three intervening parts 44 are located between the side part 41 and the other side part 42. The five parts are arranged at intervals along the long side direction 102. Each of the four interruptions 43 is provided with each of the four doped regions 332. When viewed from above, the four doped regions 332 overlap with two adjacent parts of the five parts. The four gate electrodes 31 are respectively arranged opposite to each of the four doped regions 332 in the thickness direction 101. The inductor element 10A includes four gate wiring parts 51. The four gate electrodes 31 are in contact with each of the four gate wiring parts 51 via the through hole 60. By configuring as above, the inductor element 10A includes a plurality of inductor variable resistance parts 30A, 30B, 30C, and 30D connected in series with each other.

[0094] According to the second embodiment, the inductor element 10A includes a plurality of inductor variable resistors 30A, 30B, 30C, and 30D connected in series. Therefore, compared with the inductor element 10 including only one inductor variable resistor 30 , the impedance of the inductor element 10A can be controlled more finely.

[0095] <Third embodiment>

[0096] Fig. 9 1 is a schematic top view of an inductor element according to a third embodiment of the present disclosure. The inductor element 10B of the third embodiment is different from the inductor element 10 of the first embodiment in that the inductor element 10B includes a plurality of inductor variable resistors 30E, 30F, and 30G connected in parallel to each other. The differences from the first embodiment are described below. The same reference numerals are used for the common points with the inductor element 10 of the first embodiment, and the description thereof is omitted in principle, but described as necessary.

[0097] like Fig. 9 As shown, the inductor element 10B includes three inductor variable resistor parts 30E, 30F, and 30G. The three inductor variable resistor parts 30E, 30F, and 30G are respectively provided with a gate electrode 31, an oxide film 32, and a channel layer 33, similar to the first embodiment. The inductor element 10B includes three gate electrodes 31, one oxide film 32, and one channel layer 33. One channel layer 33 has one non-doped region 331 and three doped regions 332. Each of the three gate electrodes 31 and each of the three doped regions 332 are provided corresponding to the three inductor variable resistor parts 30E, 30F, and 30G. One oxide film 32 and one non-doped region 331 are shared by the three inductor variable resistor parts 30E, 30F, and 30G.

[0098] The inductor wiring 40 is divided into three parts (a side part 41, another side part 42 and an intervening part 44) by two interruption parts 43. The intervening part 44 is located between the side part 41 and the other side part 42. The three parts are arranged at intervals along the long side direction 102. One intervening part 44 is divided into a first intervening part 44A and a second intervening part 44B arranged at intervals along the short side direction 103. Three doping regions 332 are respectively provided throughout the three parts. That is, when viewed from above, the three doping regions 332 overlap with the three parts respectively. The three gate electrodes 31 are respectively arranged opposite to each of the three doping regions 332 in the thickness direction 101. The inductor element 10B includes three gate wiring parts 51. Each of the three gate electrodes 31 contacts each of the three gate wiring parts 51 via a through hole 60. By configuring as above, the inductor element 10B includes a plurality of inductor variable resistance parts 30E, 30F, and 30G connected in parallel with each other.

[0099] According to the third embodiment, the inductor element 10B includes a plurality of inductor variable resistors 30E, 30F, and 30G connected in parallel to each other. Therefore, compared with the inductor element 10 including only one inductor variable resistor 30 , the impedance of the inductor element 10B can be controlled more finely.

[0100] <Fourth embodiment>

[0101] Fig.10 The inductor element according to the fourth embodiment of the present disclosure is Figure 3 Schematic cross-sectional view of a cross section corresponding to the AA cross section of the fourth embodiment. The inductor element 10C of the fourth embodiment is different from the inductor element 10 of the first embodiment in that the inductor element 10C further includes an intervening insulating layer 71 and a covering insulating layer 72. The differences from the first embodiment are described below. The same reference numerals are used for the common points with the inductor element 10 of the first embodiment, and the description thereof is omitted in principle, but described as needed.

[0102] like Fig.10 As shown, the inductor element 10C further includes an intervening insulating layer 71 and a cover insulating layer 72 .

[0103] The intervening insulating layer 71 is interposed between the oxide film 32 and the inductor wiring 40 in the thickness direction 101. Fig.10 In the structure shown, the intervening insulating layer 71 is interposed between the channel layer 33 and the inductor wiring 40 in the thickness direction 101. The intervening insulating layer 71 is stacked on the channel layer 33. The inductor wiring 40 is stacked on the intervening insulating layer 71. The intervening insulating layer 71 is in contact with the inductor wiring 40.

[0104] The intervening insulating layer 71 has two through holes 711 and 712. The two through holes 711 and 712 penetrate the intervening insulating layer 71 in the thickness direction 101, respectively.

[0105] In a plan view, the via 711 is located so as to overlap both the one side portion 41 of the inductor wiring 40 and the doped region 332 of the channel layer 33. In a plan view, the via 712 is located so as to overlap both the other side portion 42 of the inductor wiring 40 and the doped region 332 of the channel layer 33.

[0106] When a metal film is formed on the channel layer 33 during the manufacturing process of the inductor element 10C, the metal film is filled into the through holes 711 and 712. The metal film filled into the through hole 711 becomes a part of the one side portion 41, and the metal film filled into the through hole 712 becomes a part of the other side portion 42. Thus, the one side portion 41 contacts the doped region 332 via the through hole 711, and the other side portion 42 contacts the doped region 332 via the through hole 712. As a result, even when no voltage is applied between the gate electrode 31 and the one side portion 41, current flows between the one side portion 41 and the other side portion 42 via the doped region 332.

[0107] With the above configuration, the inductor wiring 40 covers a portion of the channel layer 33 via the vias 711 and 712 .

[0108] The defect density of the channel layer 33 near the interface 33A between the intervening insulating layer 71 and the channel layer 33 is higher than the defect density of the channel layer 33 near the interface 33B between the oxide film 32 and the channel layer 33. The defect density is the ratio of crystal defects per unit volume constituting the channel layer 33 (particularly the doped region 332).

[0109] The cover insulating layer 72 is provided on the opposite side of the oxide film 32 in the thickness direction 101 with respect to the channel layer 33. The cover insulating layer 72 is stacked on the intervening insulating layer 71. The cover insulating layer 72 covers the inductor wiring 40.

[0110] In the fourth embodiment, the intervening insulating layer 71 is an inorganic insulating layer, and the covering insulating layer 72 is an organic insulating layer. The intervening insulating layer 71 is made of, for example, silicon dioxide (SiO 2 The cover insulating layer 72 is made of, for example, polyimide.

[0111] According to the fourth embodiment, the possibility of the channel layer 33 and the inductor wiring 40 being electrically connected at an unintended position can be reduced by the intervening insulating layer 71 covering a portion of the channel layer 33 .

[0112] According to the fourth embodiment, the inductor wiring 40 contacts the channel layer 33 via the vias 711 and 712. Therefore, by changing the positions of the vias 711 and 712, the contact position between the inductor wiring 40 and the channel layer 33 can be changed. That is, the degree of freedom in designing the inductor element 10 can be increased.

[0113] A path through which current flows is formed near the interface 33A between the channel layer 33 and the intervening insulating layer 71. Generally, since the defect density near this path is increased, the mobility of electron and hole carriers is reduced, so it is not preferred. However, the property of the defects of the channel layer 33 that captures carriers generated on the channel layer 33 can be utilized. That is, the defects capture carriers near the path that cause eddy current losses generated at high frequency characteristics. Thus, the losses generated near the path can be suppressed. As a result, it is possible to provide an inductor element 10 that can suppress the degradation of the Q value in the high frequency region and has good high frequency characteristics.

[0114] According to the fourth embodiment, since the inductor wiring 40 is protected by the cover insulating layer 72, the possibility of damage to the inductor wiring 40 can be reduced. As a result, the reliability of the inductor element 10 can be improved.

[0115] exist Fig.10 In the structure shown in FIG. 1 , the intervening insulating layer 71 is stacked on the channel layer 33 and is separated from the oxide film 32. However, the intervening insulating layer 71 may also be in contact with the oxide film 32. For example, Fig.11 As shown, an intervening insulating layer 71 may also be stacked on the oxide film 32 to cover the channel layer 33 . Fig.11 A modification example of the inductor element according to the fourth embodiment of the present disclosure is shown. Figure 3 Schematic cross-sectional view of a cross section corresponding to the AA cross section of FIG. 7 . In this case, the intervening insulating layer 71 covers the side surface 33C of the channel layer 33 .

[0116] exist Fig.11 In the structure shown, the channel layer 33 is composed only of the doped region 332. However, the channel layer 33 may also have a non-doped region 331 and a doped region 332, or may be composed only of the non-doped region 331. In the case where the channel layer 33 has the non-doped region 331 and the doped region 332, for example, the doped region 332 is provided at a position overlapping the through holes 711 and 712 in a plan view, and the non-doped region 331 is provided at a position overlapping the intervening insulating layer 71 in a plan view.

[0117] according to Fig.11 In the structure shown, by patterning the channel layer 33 on the oxide film 32, the channel layer 33 can be formed in an arbitrary region on the oxide film 32. Therefore, the degree of freedom in designing the inductor element 10 can be improved.

[0118] exist Fig.10 and Fig.11 In the illustrated structure, the inductor element 10C includes the intervening insulating layer 71 and the covering insulating layer 72 . However, the inductor element 10C may include only one of the intervening insulating layer 71 and the covering insulating layer 72 .

[0119] <Fifth embodiment>

[0120] Fig.12 1 is a schematic top view of an inductor element according to a fifth embodiment of the present disclosure. The inductor element 10D according to the fifth embodiment is different from the inductor element 10 according to the first embodiment in the following points. That is, the inductor element 10D includes a plurality of inductor variable resistor sections 30, and the plurality of inductor variable resistor sections 30 includes a first variable resistor section 81 and a second variable resistor section 82. The differences from the first embodiment will be described below. The same reference numerals are used for the common points with the inductor element 10 according to the first embodiment, and the description thereof is omitted in principle, but will be described as necessary.

[0121] like Fig.12 As shown, the inductor wiring 40 included in the inductor element 10D extends in a zigzag manner on a plane (the main surface 33D of the channel layer 33) intersecting the thickness direction 101 (orthogonal in the fifth embodiment). The main surface of the channel layer 33 is an example of an intersecting plane. The inductor wiring 40 is a zigzag shape, and includes thirteen straight line portions 40A extending straight and twelve curved portions 40B that are curved. The thirteen straight line portions 40A and the twelve curved portions 40B are alternately and continuously arranged. The thirteen straight line portions 40A extend along the short side direction 103, respectively, and are arranged at intervals in the long side direction 102. The twelve curved portions 40B include six curved portions 40Ba each having a discontinuity 43 and six curved portions 40Bb each having no discontinuity 43.

[0122] In the fifth embodiment, the width of the inductor wiring 40 is 30 μm. The width of the inductor wiring 40 is the length in the direction orthogonal to the extension and protrusion direction of the inductor wiring 40 and the thickness direction 101. In the fifth embodiment, the thickness of the inductor wiring 40 is 30 μm. The thickness of the inductor wiring 40 is the length in the thickness direction 101 of the inductor wiring 40. In the fifth embodiment, the interval between two adjacent straight line portions 40A is 100 μm. The interval between two adjacent straight line portions 40A is the length of the space between the two adjacent straight line portions 40A in the long side direction 102.

[0123] The inductor element 10D includes eight inductor variable resistor sections 30. The eight inductor variable resistor sections 30 include six first variable resistor sections 81 and two second variable resistor sections 82 (a second variable resistor section 821 and a second variable resistor section 822).

[0124] In addition, the number of the inductor variable resistor section 30, the first variable resistor section 81, and the second variable resistor section 82 is not limited to the above number. The inductor element 10D only needs to include a plurality of inductor variable resistor sections 30. A portion of the plurality of inductor variable resistor sections 30 only needs to be the first variable resistor section 81. The rest of the plurality of inductor variable resistor sections 30 only needs to be the second variable resistor section 82.

[0125] Each of the eight inductor variable resistor units 30 is a MOSFET similar to the above-mentioned embodiments, and includes a gate electrode 31, an oxide film 32, and a channel layer 33. The gate electrode 31 and the doped region 332 of the channel layer 33 are provided for each of the eight inductor variable resistor units 30. The oxide film 32 and the non-doped region 331 of the channel layer 33 are shared by the eight inductor variable resistor units 30.

[0126] The gate electrode 31A and the doped region 332 of each of the six first variable resistor sections 81 are provided at positions overlapping the six interruption sections 43 in a plan view, similarly to the inductor variable resistor section 30 in the first embodiment. Thus, similarly to the inductor variable resistor section 30 in the first embodiment, two portions of the inductor wiring 40 located on both sides of the interruption section 43 are conducted via the first variable resistor section 81. The gate electrodes 31A of each of the six first variable resistor sections 81 are opposed to the doped regions 332 of each of the six first variable resistor sections 81 in the thickness direction 101. The gate electrodes 31A of each of the six first variable resistor sections 81 are electrically connected to the gate wiring section 51 via the through hole 60. The gate electrode 31A of the first variable resistor section 81 is an example of a first gate electrode.

[0127] The gate electrode 31 and the doped region 332 of the second variable resistor portions 821 and 822 are provided in a portion of the inductor wiring 40 different from the interruption portion 43. Fig.12 In the illustrated structure, the gate electrode 31B and the doped region 332 of the second variable resistor portions 821 and 822 are provided in a portion overlapping with the straight line portion 40A of the inductor wiring 40 in a plan view.

[0128] The doped region 332 of the second variable resistor section 821 is provided across six straight line portions 40A. The doped region 332 of the second variable resistor section 822 is provided across seven straight line portions 40A. The number of straight line portions 40A spanned by the doped region 332 of the second variable resistor section 82 is arbitrary. The number of second variable resistor sections 82 is arbitrary. For example, the number of straight line portions 40A spanned by the doped region 332 of the second variable resistor section 82 may be one. In this case, the inductor element 10D may also include twelve second variable resistor sections 82, which are Fig.12 The number of spaces between two adjacent straight line portions 40A in the inductor wiring 40 is shown.

[0129] Here, two adjacent straight line portions 40A in each of the thirteen straight line portions 40A are opposed to each other in the long side direction 102. The long side direction 102 is an example of an opposing direction. One end of each of the thirteen straight line portions 40A is continuous with one end of the adjacent straight line portion 40A via the bent portion 40Bb. There is a bent portion 40Ba between the other ends of two adjacent straight line portions 40A in the thirteen straight line portions 40A. That is, the other ends of the two adjacent straight line portions 40A are separated from each other by the interruption portion 43. As described above, the two adjacent straight line portions 40A (between the first portion and the second portion described later) via the bent portion 40Bb are connected through the inductor wiring 40. In addition, the two adjacent straight line portions 40A (between the first portion and the second portion described later) via the bent portion 40Ba are connected through the inductor wiring 40 and the first variable resistor portion 81. In addition, the other end of one of the two straight line portions 40A located at the two ends of the inductor wiring 40 is connected to the source wiring portion 52 instead of being connected to the bent portion 40Ba. One end of the other of the two straight portions 40A located at both ends of the inductor wiring 40 is connected to the drain wiring portion 53 instead of being connected to the bent portion 40Bb.

[0130] When focusing on any two adjacent straight line portions 40A among the six straight line portions 40A, the gate electrode 31B and the doped region 332 of the second variable resistor portion 821 extend as follows. That is, the gate electrode 31B and the doped region 332 of the second variable resistor portion 821 extend along the long-side direction 102 from a position overlapping with one of the two straight line portions 40A to a position overlapping with the other one when viewed from above.

[0131] Similarly, when focusing on any two adjacent straight line portions 40A among the seven straight line portions 40A, the gate electrode 31B and the doped region 332 of the second variable resistor portion 822 extend as follows. That is, the gate electrode 31B and the doped region 332 of the second variable resistor portion 822 extend along the long-side direction 102 from a position overlapping with one of the two straight line portions 40A in a plan view to a position overlapping with the other.

[0132] In this case, one of the two adjacent straight line portions 40A is an example of the first portion. The other of the two adjacent straight line portions 40A is an example of the second portion. The gate electrode 31B of the second variable resistor portion 822 is an example of the second gate electrode.

[0133] The doped regions 332 of the second variable resistor units 821 and 822 are connected to the straight line portions 40A by contacting the straight line portions 40A located at the overlapping positions when viewed from above. Thus, the doped regions 332 of the second variable resistor units 821 and 822 extend from the position connected to the first portion to the position connected to the second portion along the long side direction 102. In other words, the six straight line portions 40A spanned by the doped regions 332 of the second variable resistor unit 821 can be mutually conductive via the doped regions 332 of the second variable resistor unit 821. The seven straight line portions 40A spanned by the doped regions 332 of the second variable resistor unit 822 can be mutually conductive via the doped regions 332 of the second variable resistor unit 822.

[0134] The gate electrodes 31B of the second variable resistors 821 and 822 face the doped regions 332 of the second variable resistors 821 and 822 in the thickness direction 101 . The gate electrodes 31B of the second variable resistors 821 and 822 are electrically connected to the gate wiring portion 51 via the through-holes 60 .

[0135] In the fifth embodiment, the first variable resistor unit 81 as a MOSFET is a normally-on type, and functions in the same manner as the inductor variable resistor unit 30 in the first embodiment. Therefore, further detailed description is omitted here.

[0136] In the fifth embodiment, the second variable resistors 821 and 822 as MOSFETs are normally closed. The second variable resistors 821 and 822 function as follows. When no voltage is applied between the gate and the source, no current flows in the doped region 332. At this time, between the source wiring portion 52 and the drain wiring portion 53, the current flows along the inductor wiring 40, that is, flows through the bent portion 40B. On the other hand, when a voltage is applied between the gate and the source, a low resistance portion is formed in the doped region 332. In this case, the resistance in the doped region 332 becomes lower than the resistance in the inductor wiring 40. Therefore, most of the current flows through the doped region 332 instead of the bent portion 40B. As a result, the number of meandering times of the inductor wiring 40, which is a zigzag shape, is reduced, and the inductance and impedance of the inductor element 10D change.

[0137] exist Fig.12 In the case of the structure shown, when no voltage is applied to the gate electrodes 31 of both the second variable resistors 821 and 822, the number of meandering of the inductor wiring 40 is 12 times. When a voltage is applied to only one of the gate electrodes 31 of the second variable resistors 821 and 822, the number of meandering of the inductor wiring 40 is 6 times. When a voltage is applied to the gate electrodes 31 of both the second variable resistors 821 and 822, the number of meandering of the inductor wiring 40 is 0 times.

[0138] According to the fifth embodiment, the first portion and the second portion (two adjacent straight portions 40A) can be connected linearly by changing the resistance value of the second variable resistor 82. As a result, the length and number of turns of the inductor wiring 40 are changed, so that the inductance of the inductor element 10D can be changed. As a result, the impedance of the inductor element 10D can be changed.

[0139] <Sixth embodiment>

[0140] Fig.13 1 is a schematic top view of an integrated circuit according to a sixth embodiment of the present disclosure. Fig.14 Yes means Fig.13 Schematic cross-sectional view of the BB section. Fig.15 : is an equivalent circuit diagram of an integrated circuit according to a sixth embodiment of the present disclosure.

[0141] like Fig.13 and Fig.14 As shown, the integrated circuit 6A of the sixth embodiment is different from the integrated circuit 6 of the first embodiment in that the integrated circuit 6A includes a capacitor element 5 in addition to the inductor element 10. The differences from the first embodiment are described below. The same reference numerals are given to the common points with the integrated circuit 6 of the first embodiment, and the description thereof is omitted in principle, but described as needed.

[0142] like Figure 13 to Figure 15 As shown, the integrated circuit 6A includes an inductor element 10 and a capacitor element 5 .

[0143] like Fig.15 As shown in FIG. 1 , in the sixth embodiment, the inductor element 10 and the capacitor element 5 are connected in series. In addition, the inductor element 10 and the capacitor element 5 are not limited to being connected in series, but may also be connected in parallel. Fig.14 As shown, the inductor element 10 includes an inductor variable resistor portion 30H, and the capacitor element 5 includes a capacitor variable resistor portion 30I. As in the above-mentioned embodiments, the impedance of the inductor element 10 is variable. As described later, the capacitance of the capacitor element 5 is variable.

[0144] like Fig.13 and Fig.14 As shown, the inductor variable resistor portion 30H and the capacitor variable resistor portion 30I are MOSFETs. The MOSFET includes a gate electrode 31, an oxide film 32, and a channel layer 33. The gate electrode 31 includes two gate electrodes 311 and 312. The channel layer 33 includes two doped regions 332 and 333.

[0145] The inductor variable resistor section 30H includes a gate electrode 311, an oxide film 32, and a channel layer 33. The capacitor variable resistor section 30I includes a gate electrode 312, an oxide film 32, and a channel layer 33. The gate electrode 312 is an example of an additional gate electrode. The oxide film 32 and the non-doped region 331 of the channel layer 33 are shared by the inductor variable resistor section 30H and the capacitor variable resistor section 30I. The doped region 332 of the channel layer 33 is included in the inductor variable resistor section 30H. The doped region 333 of the channel layer 33 is included in the capacitor variable resistor section 30I.

[0146] The structure of the inductor element 10 is the same as that of the first embodiment. Therefore, in the sixth embodiment, the description of the structure of the inductor element 10 will be omitted.

[0147] The capacitor element 5 includes the above-mentioned capacitor variable resistor portion 30I, a pair of electrodes 91, 92, insulating resistance layers 73, 74, and a wiring portion 50 (specifically, an additional gate wiring portion 56, a capacitor wiring portion 57, and a source wiring portion 52 in the wiring portion 50). In the sixth embodiment, the source wiring portion 52 is shared by the capacitor element 5 and the inductor element 10.

[0148] The electrode 91, which is one of the pair of electrodes 91 and 92, is stacked on the channel layer 33. The electrode 91 is provided on the opposite side of the oxide film 32 in the thickness direction 101 with respect to the channel layer 33 and is in contact with the channel layer 33. The electrode 91 includes an electrode 911 and an electrode 912. The electrodes 911 and 912 are provided with a gap 913 spaced apart from each other in the longitudinal direction 102. That is, the electrode 91 is divided into a plurality of parts via the gap 913. The electrode 92 is stacked on the insulating resistance layer 73. The electrode 92 is opposite to the electrode 91 in the thickness direction 101.

[0149] The material forming the pair of electrodes 91 and 92 is different from the material forming the inductor wiring 40 of the inductor element 10. In the sixth embodiment, the pair of electrodes 91 and 92 are made of aluminum (Al), and the inductor wiring 40 is made of copper (Cu).

[0150] In a plan view, the doped region 333 is located at a position overlapping with the slit 913. The doped region 333 is in contact with both the electrodes 911 and 912. In a plan view, the gate electrode 312 is located at a position overlapping with the doped region 333.

[0151] The insulating resistance layer 73 is stacked on the channel layer 33 so as to cover the electrode 91. The insulating resistance layer 73 is located between the pair of electrodes 91,92.

[0152] The insulating resistance layer 74 is stacked on the insulating resistance layer 73 and the electrode 92 to cover the insulating resistance layer 73 and the electrode 92. The inductor wiring 40 is stacked on the insulating resistance layer 74. Thus, the pair of electrodes 91 and 92 are electrically insulated from the inductor wiring 40.

[0153] In the sixth embodiment, the insulating resistance layer 73 is an inorganic insulating layer, and the insulating resistance layer 74 is an organic insulating layer. The insulating resistance layer 73 is made of, for example, silicon dioxide (SiO 2 The insulating resistance layer 74 is made of, for example, polyimide.

[0154] An organic insulating layer can be easily formed thicker than an inorganic insulating layer. Therefore, by providing the insulating resistance layer 74 as an organic insulating layer between the pair of electrodes 91 and 92 and the inductor wiring 40 , the distance between the pair of electrodes 91 and 92 and the inductor wiring 40 can be easily increased.

[0155] The additional gate wiring portion 56 is electrically connected to the gate electrode 312 via the through hole 60. The capacitor wiring portion 57 is electrically connected to the electrode 911 via the through hole 60. The source wiring portion 52 is electrically connected to the electrode 92 via the through hole 60.

[0156] The capacitor variable resistor section 30I as a MOSFET functions as follows: The gate electrode 312 functions as a gate of the MOSFET. The electrode 911 functions as a drain of the MOSFET. The one side portion 41 of the inductor element 10 functions as a source of the MOSFET.

[0157] In the sixth embodiment, the capacitor variable resistance part 30I as a MOSFET is a normally closed type. When no voltage is applied between the gate and the source, no current flows in the doped region 333. At this time, the capacitor is formed by the electrode 911 and the electrode 92 in the electrode 91. That is, charge is accumulated between the electrode 911 and the electrode 92. On the other hand, when a voltage is applied between the gate and the source, a low resistance part is formed in the doped region 333. Therefore, the current flows from the electrode 911 to the electrode 912 via the doped region 333. At this time, the capacitor is formed by the entire electrode 91 (electrodes 911, 912) and the electrode 92. That is, charge is accumulated between the electrodes 911, 912 and the electrode 92. That is, depending on whether a voltage is applied to the gate electrode 312, the resistance value relative to the current flowing in the electrode 91 can be changed. According to the change in the resistance value, the electrostatic capacitance of the capacitor can be changed.

[0158] In addition, when the carrier concentration of the channel layer 33 is high, the capacitor variable resistor unit 30I as a MOSFET may also be a normally open type. In addition, in the sixth embodiment, both the inductor variable resistor unit 30H and the capacitor variable resistor unit 30I are MOSFETs. However, the inductor variable resistor unit 30H and the capacitor variable resistor unit 30I may also be transistors of different types. For example, the inductor variable resistor unit 30H may be a MOSFET, and the capacitor variable resistor unit 30I may be a bipolar transistor. In addition, for example, both the inductor variable resistor unit 30H and the capacitor variable resistor unit 30I are MOSFETs, but the channel width and length may be different. In addition, in the sixth embodiment, the inductor variable resistor unit 30H and the capacitor variable resistor unit 30I have a common oxide film, but they may also have oxide films independently.

[0159] According to the sixth embodiment, the integrated circuit 6A includes the capacitor element 5 in addition to the inductor element 10. Therefore, the degree of freedom in designing the integrated circuit 6A can be improved, and the integrated circuit 6A having more abundant functions can be provided.

[0160] According to the sixth embodiment, the impedance of the capacitor element 5 can be changed by controlling the application of the voltage to the gate electrode 312 .

[0161] According to the sixth embodiment, the material of the pair of electrodes 91 and 92 forming the capacitor element 5 is different from the material of the inductor wiring 40 forming the inductor element 10. Thus, the optimal material can be selected for each of the pair of electrodes 91 and 92 and the inductor wiring 40. As a result, the cost of the integrated circuit 6A can be reduced.

[0162] A portion of the channel layer 33 may also serve as one of the pair of electrodes 91 and 92 .

[0163] Fig.16 is a modified example of the integrated circuit according to the sixth embodiment of the present disclosure. Fig.13 A schematic cross-sectional view of the cross section corresponding to the B-B cross section of FIG. Fig.16 In the structure shown, a part of the channel layer 33 also serves as the electrode 91 .

[0164] The channel layer 33 has a doped region 334 . The doped region 334 also serves as the electrode 91 .

[0165] The capacitor element 5 has three gate electrodes 313, 314, and 315 as the gate electrode 31. The gate electrodes 313, 314, and 315 are an example of an additional gate electrode. The gate electrodes 313, 314, and 315 are opposite to the doped region 334 in the thickness direction 101. That is, when viewed from above, the gate electrodes 313, 314, and 315 are located at a position overlapping with the doped region 334. Voltage is applied to the three gate electrodes 313, 314, and 315 independently. In addition, the number of gate electrodes included in the capacitor element 5 is not limited to three.

[0166] exist Fig.16 In the structure shown, the capacitor variable resistor portion 30I as a MOSFET is a normally closed type. Current flows in the portion of the doped region 334 that is opposite to the electrode to which the voltage is applied among the three gate electrodes 313, 314, and 315. Thus, a capacitor is formed by this portion and the electrode 92. In other words, charge is accumulated between this portion and the electrode 92. For example, the electrostatic capacitance of the capacitor in the case where a voltage is applied to all of the three gate electrodes 313, 314, and 315 is greater than the electrostatic capacitance of the capacitor in the case where a voltage is applied to two gate electrodes 313 and 314.

[0167] According to the sixth embodiment, the doped region 333 as a part of the channel layer 33 also serves as one of the pair of electrodes. Therefore, in the manufacturing process of the integrated circuit 6A, the step of forming one of the pair of electrodes can be omitted. As a result, the cost of the integrated circuit 6A can be improved.

[0168] The number of capacitor elements 5 included in the integrated circuit 6A is not limited to one. The number of capacitor variable resistor portions 30I included in the capacitor element 5 is not limited to one.

[0169] In the above-described embodiments, the inductor variable resistor section 30 ( 30A to 30H) is described as an example in which the inductor variable resistor section 30 ( 30A to 30H) is a MOSFET. However, the inductor variable resistor section 30 ( 30A to 30H) is not limited to a MOSFET.

[0170] For example, Fig.17 As shown in FIG. 1 , the inductor variable resistor section 301 included in the inductor element 10F may be a bipolar transistor. Fig.17 is an inductor element according to a seventh embodiment of the present disclosure. Figure 3 Schematic cross-sectional view of the cross-section corresponding to the A-A cross-section.

[0171] like Fig.17 As shown, the inductor variable resistor portion 301 includes a substrate 20A, a collector layer 34, a base layer 35, and an emitter layer 36. The substrate 20A is doped to P type and is composed of silicon (Si). The collector layer 34 is formed on the substrate 20A and is doped to N type. The base layer 35 is formed on the collector layer 34 and is doped to P type. The emitter layer 36 is formed on the base layer 35 and is doped to N type. The insulating layer 75 is stacked on the substrate 20A to cover the collector layer 34, the base layer 35, and the emitter layer 36. The inductor wiring 40 is stacked on the insulating layer 75. One side portion 41 of the inductor wiring 40 is electrically connected to the collector layer 34 via a through hole 412 that penetrates the insulating layer 75 in the thickness direction 101. The other side portion 42 of the inductor wiring 40 is electrically connected to the emitter layer 36 via a through hole 422 that penetrates the insulating layer 75 in the thickness direction 101. The inductor variable resistor portion 301 having the above structure is manufactured by a known method.

[0172] exist Fig.17 In the structure shown, the base current is amplified by controlling the potential difference between the collector and the base. By controlling the potential difference, the resistance in the inductor variable resistor section 301 can be controlled.

[0173] For example, Fig.18 As shown in FIG. 1 , the inductor variable resistor portion 302 included in the inductor element 10G may be a photoresistor. In other words, the inductor variable resistor portion is not limited to a transistor. Fig.18 is an inductor element according to an eighth embodiment of the present disclosure. Figure 3 Schematic cross-sectional view of the cross-section corresponding to the A-A cross-section.

[0174] Fig.18As shown, the inductor variable resistance part 302 is a cadmium sulfide (CdS) layer stacked on a portion of the substrate 20. For example, the cadmium sulfide layer may be formed at a necessary position on the substrate 20 using a printing and sintering method used in the manufacture of solar cells, etc. In addition, for example, after the cadmium sulfide layer is formed on the entire surface of the substrate 20, the cadmium sulfide layer may be left only at a necessary position by a known method such as etching.

[0175] A portion of one side portion 41 of the inductor wiring 40 is in contact with the inductor variable resistor portion 302 (cadmium sulfide layer). A portion of the other side portion 42 of the inductor wiring 40 is in contact with the inductor variable resistor portion 302. The one side portion 41 and the other side portion 42 are formed with a discontinuity 43 interposed therebetween. The inductor variable resistor portion 302 is formed across the discontinuity 43 in a plan view.

[0176] exist Fig.18 In the structure shown, the resistance of the inductor variable resistor section 302 can be controlled according to the amount of light irradiated to the inductor variable resistor section 302. For example, the smaller the amount of light, the larger the resistance.

[0177] In addition, the capacitor variable resistor section 30I is also not limited to MOSFET, similar to the inductor variable resistor sections 30A to 30H.

[0178] The inductor element and integrated circuit described above can also be expressed as follows.

[0179] (1) An inductor element according to one embodiment of the present disclosure includes:

[0180] The inductor wiring has a discontinuity at at least one location;

[0181] a pair of external terminals connected to one side portion and the other side portion located on both sides of the interrupted portion in the inductor wiring, respectively, and exposed to the outside;

[0182] at least one inductor variable resistor section disposed at the interruption section; and

[0183] at least one variable resistance terminal connected to the variable resistance portion of the inductor and exposed to the outside,

[0184] The inductor variable resistor portion connects the one side portion and the other side portion to change the resistance value between the one side portion and the other side portion.

[0185] (2) In the inductor element of (1),

[0186] The inductor variable resistor part may also be a MOSFET.

[0187] The inductor variable resistor portion as a MOSFET may include:

[0188] Oxide film;

[0189] a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping the interruption portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and

[0190] a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film;

[0191] The inductor wiring may be provided on the opposite side of the oxide film with respect to the channel layer in the thickness direction and in contact with the channel layer.

[0192] (3) In the inductor element of (2), wherein:

[0193] The oxide film may include a High-k material.

[0194] (4) In the inductor element of (3), wherein:

[0195] The High-k material may be hafnium oxide.

[0196] (5) In any one of the inductor elements (2) to (4), wherein:

[0197] The channel layer may include a metal oxide semiconductor.

[0198] (6) In any one of the inductor elements (2) to (4), wherein:

[0199] The channel layer may have a doped region, wherein the doped region includes amorphous silicon and is doped with impurities.

[0200] When viewed in the thickness direction, the doped region may overlap with the interruption portion.

[0201] (7) In any one of the inductor elements (2) to (4), wherein:

[0202] The channel layer may have a doped region, wherein the doped region includes a metal oxide semiconductor and is doped with impurities.

[0203] When viewed in the thickness direction, the doped region may overlap with the interruption portion.

[0204] (8) In the inductor element of (6) or (7), wherein:

[0205] The doped region may be in contact with both the one side portion and the other side portion.

[0206] (9) In any one of the inductor elements (2) to (8), wherein:

[0207] The inductor variable resistor portion as a MOSFET may be a normally-on type.

[0208] (10) Any one of the inductor elements of (2) to (9) may further include an intervening insulating layer, the intervening insulating layer being interposed between the oxide film and the inductor wiring in the thickness direction, being in contact with the inductor wiring, and covering a portion of the channel layer.

[0209] The intervening insulating layer may have a through hole, and the through hole penetrates the intervening insulating layer in the thickness direction.

[0210] The inductor wiring may be in contact with the channel layer via the through hole.

[0211] (11) In the inductor element of (10), wherein

[0212] A defect density of the channel layer near an interface between the intervening insulating layer and the channel layer may be higher than a defect density of the channel layer near an interface between the oxide film and the channel layer.

[0213] (12) In the inductor element of (10) or (11), wherein:

[0214] The intervening insulating layer may cover side surfaces of the channel layer.

[0215] (13) Any one of the inductor elements described in (2) to (12) may further include a cover insulating layer provided on the opposite side of the oxide film in the thickness direction with respect to the channel layer and covering the inductor wiring.

[0216] (14) Any one of the inductor elements in (1) to (13),

[0217] The inductor variable resistor unit may be provided in plurality.

[0218] A plurality of the inductor variable resistor portions may be connected in series.

[0219] (15) Any one of the inductor elements in (1) to (13),

[0220] The inductor variable resistor unit may be provided in plurality.

[0221] A plurality of the inductor variable resistor portions may be connected in parallel.

[0222] (16) Any one of the inductor elements in (1) to (15),

[0223] The inductor variable resistor unit may be provided in plurality.

[0224] A portion of the plurality of inductor variable resistors may be a first variable resistor provided in the interrupted portion of the inductor wiring.

[0225] A part of the plurality of inductor variable resistors may be a second variable resistor provided in a portion of the inductor wiring different from the interruption portion.

[0226] The inductor wiring may include a first portion and a second portion, the second portion being continuous with the first portion without the interruption portion and facing the first portion in an opposing direction.

[0227] The second variable resistor portion may extend from a position connected to the first portion along the opposing direction to a position connected to the second portion.

[0228] (17) In the inductor element of (16), wherein

[0229] The inductor variable resistor portion may be a MOSFET,

[0230] The first variable resistor unit of the inductor variable resistor unit as a MOSFET may include:

[0231] Oxide film;

[0232] a first gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping the discontinuity portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and

[0233] a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film;

[0234] The second variable resistor section as the inductor variable resistor section of the MOSFET may include:

[0235] The above oxide film;

[0236] a second gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping with a portion different from the interruption portion when viewed in the thickness direction; and

[0237] The channel layer,

[0238] The inductor wiring may be provided on the opposite side of the oxide film with respect to the channel layer in the thickness direction and in contact with the channel layer, and may extend on an intersecting plane intersecting the opposing direction.

[0239] The second gate electrode may extend from the first portion to the second portion along the opposing direction.

[0240] (18) In any one of the inductor elements (1) to (17), wherein:

[0241] At least one of the external terminals and at least one of the variable resistance terminals may be integrally formed.

[0242] (19) An integrated circuit according to one embodiment of the present disclosure includes:

[0243] Any one of the inductor elements (1) to (18); and

[0244] The control unit controls the resistance value of the inductor variable resistor unit.

[0245] (20) The integrated circuit of (19) may further include a capacitor element having a pair of electrodes facing each other and at least one capacitor variable resistance portion,

[0246] The capacitor variable resistor portion may change the capacitance of the capacitor element by changing a resistance value with respect to a current flowing through the pair of electrodes.

[0247] (21) In the integrated circuit of (20), wherein:

[0248] The inductor variable resistor portion may be a MOSFET,

[0249] The inductor variable resistor portion as a MOSFET may include:

[0250] Oxide film;

[0251] a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping the interruption portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and

[0252] a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film;

[0253] The capacitor variable resistor may be a MOSFET.

[0254] The capacitor variable resistor portion as a MOSFET may include:

[0255] The above oxide film;

[0256] adding a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film; and

[0257] The channel layer,

[0258] The pair of electrodes may be opposed to each other in the thickness direction.

[0259] One of the pair of electrodes is provided on the opposite side of the oxide film in the thickness direction relative to the channel layer and in contact with the channel layer, and is divided into a plurality of parts via a slit.

[0260] The additional gate electrode may be located at a position overlapping with the slit when viewed in the thickness direction.

[0261] (22) In the integrated circuit of (20), wherein:

[0262] The inductor variable resistor portion may be a MOSFET,

[0263] The inductor variable resistor portion as a MOSFET may include:

[0264] Oxide film;

[0265] a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping the interruption portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and

[0266] a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film;

[0267] The capacitor variable resistor may be a MOSFET.

[0268] The capacitor variable resistor portion as a MOSFET may include:

[0269] The above oxide film;

[0270] adding a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film; and

[0271] The channel layer,

[0272] The pair of electrodes may be opposed to each other in the thickness direction.

[0273] A portion of the channel layer may also serve as one of the pair of electrodes.

[0274] The additional gate electrode may be located at a position overlapping with a portion of the channel layer serving also as one of the pair of electrodes when viewed in the thickness direction.

[0275] (23) In any one of the inductor elements (20) to (22), wherein:

[0276] The material of the pair of electrodes forming the capacitor element may be different from the material of the inductor wiring forming the inductor element.

[0277] In addition, by appropriately combining any of the various embodiments described above, the effects possessed by each embodiment can be achieved.

[0278] Although the present invention is fully described in conjunction with the preferred embodiments with appropriate reference to the accompanying drawings, various modifications and alterations are obvious to those skilled in the art. It should be understood that such modifications and alterations are included within the scope of the present invention as long as they do not depart from the scope of the present invention of the appended claims.

Claims

1. An inductor element, comprising: The inductor wiring has a discontinuity at at least one location; a pair of external terminals connected to one side portion and the other side portion located on both sides of the interrupted portion in the inductor wiring, respectively, and exposed to the outside; at least one inductor variable resistor section disposed at the interruption section; and at least one variable resistance terminal connected to the variable resistance portion of the inductor and exposed to the outside, The inductor variable resistor portion connects the one side portion and the other side portion to change the resistance value between the one side portion and the other side portion.

2. The inductor element according to claim 1, wherein The variable resistor part of the inductor is a MOSFET. The inductor variable resistor section as a MOSFET includes: Oxide film; a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping with the interruption portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film; The inductor wiring is provided on the opposite side of the oxide film with respect to the channel layer in the thickness direction and is in contact with the channel layer.

3. The inductor element according to claim 2, wherein: The channel layer has a doped region doped with impurities, The doped region is in contact with both the one side portion and the other side portion.

4. The inductor element according to claim 2 or 3, wherein: The inductor variable resistor portion, which is a MOSFET, is a normally open type.

5. The inductor element according to claim 2 or 3, wherein: further comprising an intervening insulating layer interposed between the oxide film and the inductor wiring in the thickness direction and in contact with the inductor wiring and covering a portion of the channel layer, The intervening insulating layer has a through hole, and the through hole penetrates the intervening insulating layer in the thickness direction. The inductor wiring is in contact with the channel layer via the through hole.

6. The inductor element according to claim 5, wherein A defect density of the channel layer near an interface between the intervening insulating layer and the channel layer is higher than a defect density of the channel layer near an interface between the oxide film and the channel layer.

7. The inductor element according to claim 5, wherein The intervening insulating layer covers the side surfaces of the channel layer.

8. The inductor element according to claim 2 or 3, wherein: The inductor further includes a cover insulating layer provided on the opposite side of the oxide film in the thickness direction with respect to the channel layer and covering the inductor wiring.

9. The inductor element according to any one of claims 1 to 3, wherein A plurality of the above-mentioned inductor variable resistor parts are provided, A plurality of the inductor variable resistor portions are connected in series.

10. The inductor element according to any one of claims 1 to 3, wherein A plurality of the above-mentioned inductor variable resistor parts are provided, A plurality of the inductor variable resistor portions are connected in parallel.

11. The inductor element according to any one of claims 1 to 3, wherein A plurality of the above-mentioned inductor variable resistor parts are provided, A portion of the plurality of inductor variable resistors is a first variable resistor provided in the interrupted portion of the inductor wiring. The inductor variable resistor portions other than a part of the plurality of inductor variable resistor portions are second variable resistor portions provided in a portion of the inductor wiring different from the interruption portion, The inductor wiring has a first portion and a second portion, the second portion being opposed to the first portion in an opposing direction without intervening other portions of the inductor wiring, The first portion and the second portion of the inductor wiring are connected via the inductor wiring, or the inductor wiring and the first variable resistor portion. The second variable resistor portion extends along the opposing direction from a position connected to the first portion to a position connected to the second portion.

12. The inductor element according to claim 11, wherein The variable resistor part of the inductor is a MOSFET. The first variable resistor section of the inductor variable resistor section as a MOSFET includes: Oxide film; a first gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping the discontinuity portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film; The second variable resistor section as the inductor variable resistor section of the MOSFET includes: The above oxide film; a second gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping with a portion different from the interruption portion when viewed in the thickness direction; and The channel layer, The inductor wiring is provided on the opposite side of the oxide film with respect to the channel layer in the thickness direction and in contact with the channel layer, and extends on an intersecting plane intersecting the opposing direction. The second gate electrode extends from the first portion to the second portion along the opposing direction.

13. The inductor element according to claim 1, wherein At least one of the external terminals and at least one of the variable resistance terminals are integrally formed.

14. An integrated circuit comprising: The inductor element according to any one of claims 1 to 3; and The control unit controls the resistance value of the inductor variable resistor unit.

15. The integrated circuit of claim 14, wherein: further comprising a capacitor element having a pair of electrodes facing each other and at least one capacitor variable resistor portion, The capacitor variable resistor portion changes the capacitance of the capacitor element by changing a resistance value with respect to a current flowing through the pair of electrodes.

16. The integrated circuit of claim 15, wherein: The variable resistor part of the inductor is a MOSFET. The inductor variable resistor section as a MOSFET includes: Oxide film; a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping the interruption portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film; The variable resistor of the capacitor is a MOSFET. The capacitor variable resistor portion as a MOSFET includes: The above oxide film; adding a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film; and The channel layer, The pair of electrodes are opposed to each other in the thickness direction. One of the pair of electrodes is provided on the opposite side of the oxide film in the thickness direction relative to the channel layer and in contact with the channel layer, and is divided into a plurality of parts via a slit. When viewed in the thickness direction, the additional gate electrode is located at a position overlapping with the slit.

17. The integrated circuit of claim 15, wherein: The variable resistor part of the inductor is a MOSFET. The inductor variable resistor section as a MOSFET includes: Oxide film; a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film and located at a position overlapping the interruption portion when viewed in the thickness direction of the inductor variable resistance portion as the MOSFET; and a channel layer provided on the other main surface side of the oxide film so as to be in contact with the oxide film; The variable resistor of the capacitor is a MOSFET. The capacitor variable resistor portion as a MOSFET includes: The above oxide film; adding a gate electrode provided on one main surface side of the oxide film so as to be in contact with the oxide film; and The channel layer, The pair of electrodes are opposed to each other in the thickness direction. A portion of the channel layer also serves as one of the pair of electrodes. The additional gate electrode is located at a position overlapping with a portion of the channel layer serving also as one of the pair of electrodes when viewed in the thickness direction.

18. The integrated circuit of claim 15, wherein: The material of the pair of electrodes forming the capacitor element is different from the material of the inductor wiring forming the inductor element.

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