High-frequency module and communication device

Abstract

The invention provides a high-frequency module and a communication device capable of reducing degradation of attenuation characteristics of a filter. A high-frequency module (1) is provided with a first reception filter, a second reception filter, a first low noise amplifier, a first inductor, a second inductor, and a mounting substrate (4). The first reception filter, the second reception filter, the first inductor, and the second inductor are disposed on a first main surface (41) of a mounting substrate (4). In a plan view from the thickness direction (D1) of the mounting substrate (4), the outer dimension (S1) of the first inductor is larger than the outer dimension (S2) of the second inductor. The first inductor has a first portion (563) around which a portion of the winding (562) is densely wound, and a second portion (564) around which the remaining portion of the winding (562) is sparsely wound. A first portion (563) of the first inductor does not overlap the first reception filter in an orthogonal direction orthogonal to the thickness direction (D1).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly, to a high-frequency module including a plurality of filters and a plurality of inductors, and a communication device including the high-frequency module. Background Art

[0002] A high-frequency module including a plurality of filters and a plurality of inductors is described in Patent Document 1. In the high-frequency module described in Patent Document 1, impedance adjustment is performed for each filter by arranging inductors at input and output portions of each filter.

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2018 / 110577

[0006] However, in the high-frequency module described in Patent Document 1, the attenuation characteristics of the filter may deteriorate depending on the arrangement and orientation of each inductor on a mounting substrate on which a plurality of filters and a plurality of inductors are mounted. Summary of the invention

[0007] Problem that the invention aims to solve

[0008] An object of the present invention is to provide a high-frequency module and a communication device capable of reducing degradation of attenuation characteristics of a filter.

[0009] Technical solutions to solve problems

[0010] A high-frequency module according to one embodiment of the present invention comprises a first receiving filter, a second receiving filter, a first low-noise amplifier, a first inductor, a second inductor, and a mounting substrate. The first receiving filter has a passband including a first receiving frequency band. The second receiving filter has a passband including a second receiving frequency band different from the first receiving frequency band. The first inductor has a core and a winding, and is connected between the first receiving filter and the first low-noise amplifier. The second inductor is connected to an output terminal of the second receiving filter. The mounting substrate has a first main surface and a second main surface facing each other. The first receiving filter, the second receiving filter, the first inductor, and the second inductor are arranged on the first main surface of the mounting substrate. When viewed from above in the thickness direction of the mounting substrate, the outer dimensions of the first inductor are larger than the outer dimensions of the second inductor. The first inductor has a first portion on which a part of the winding is densely wound and a second portion on which the remaining part of the winding is sparsely wound. The first portion of the first inductor and the first reception filter do not overlap in a direction orthogonal to the thickness direction.

[0011] Another embodiment of the present invention relates to a high-frequency module comprising a first receiving filter, a second receiving filter, a first low-noise amplifier, a first inductor, a second inductor, and a mounting substrate. The first receiving filter has a passband including a first receiving frequency band. The second receiving filter has a passband including a second receiving frequency band different from the first receiving frequency band. The first inductor has a core and a winding, and is connected between the first receiving filter and the first low-noise amplifier. The second inductor is connected to an output terminal of the second receiving filter. The mounting substrate has a first main surface and a second main surface facing each other. The first receiving filter, the second receiving filter, the first inductor, and the second inductor are arranged on the first main surface of the mounting substrate. When viewed from above in the thickness direction of the mounting substrate, the outer dimensions of the first inductor are larger than the outer dimensions of the second inductor. When viewed from above in the thickness direction, the first receiving filter and the second receiving filter are arranged in a first direction orthogonal to the thickness direction. When viewed from above in the thickness direction, the second receive filter and the first inductor are arranged in a second direction that is orthogonal to both the thickness direction and the first direction, and the first receive filter and the second inductor are arranged in a second direction that is orthogonal to both the thickness direction and the first direction.

[0012] A communication device according to one embodiment of the present invention includes the high frequency module and a signal processing circuit. The signal processing circuit is connected to the high frequency module.

[0013] Effects of the Invention

[0014] According to the high-frequency module and the communication device according to one embodiment of the present invention, it is possible to reduce degradation of the attenuation characteristics of the filter. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a circuit configuration diagram of a communication device including the high-frequency module according to the first embodiment.

[0016] Figure 2 This is a top view of the high-frequency module as above.

[0017] Figure 3 This is a bottom view of the high-frequency module as above.

[0018] Figure 4 It is a plan view of a high-frequency module according to a modification of the first embodiment.

[0019] Figure 5 This is a graph showing attenuation characteristics of the high-frequency module according to the first embodiment and the high-frequency module according to the modification of the first embodiment.

[0020] Figure 6 This is a plan view of a high-frequency module according to the second embodiment.

[0021] Figure 7 It is a top view of the high-frequency module according to the third embodiment.

[0022] Figure 8 It is a top view of the high-frequency module according to the fourth embodiment.

[0023] Description of Reference Numerals

[0024] 1: High frequency module;

[0025] 2: Signal processing circuit;

[0026] 4: Install the substrate;

[0027] 6: IC chip;

[0028] 10: Communication device;

[0029] 13: switch (second switch);

[0030] 14: switch (1st switch);

[0031] 16: switch;

[0032] 18: Matching circuit;

[0033] 21: RF signal processing circuit;

[0034] 22: Baseband signal processing circuit;

[0035] 23: low pass filter;

[0036] 24: Attenuator;

[0037] 25: External connection terminal;

[0038] 31: 1st antenna;

[0039] 32: 2nd antenna;

[0040] 41: 1st main surface;

[0041] 42: 2nd main surface;

[0042] 51: 1st electronic component;

[0043] 52: second electronic component;

[0044] 53: 3rd electronic component;

[0045] 54: 4th electronic component;

[0046] 55: 5th electronic component;

[0047] 56: 6th electronic component;

[0048] 57: 7th electronic component;

[0049] 58: 8th electronic component;

[0050] 59: 9th electronic component;

[0051] 111: a receiving filter (a second receiving filter);

[0052] 112: receiving filter;

[0053] 113: receiving filter;

[0054] 114: receiving filter;

[0055] 115: a receiving filter (a first receiving filter);

[0056] 121: low noise amplifier (second low noise amplifier);

[0057] 122: low noise amplifier (first low noise amplifier);

[0058] 130A, 130B: common terminals;

[0059] 131~135: Select terminal;

[0060] 140A: Common terminal (second common terminal);

[0061] 140B: Common terminal (first common terminal);

[0062] 141: selection terminal (second selection terminal);

[0063] 142: Select terminal;

[0064] 143: Select terminal;

[0065] 144: Select terminal;

[0066] 145: selection terminal (first selection terminal);

[0067] 160: Common terminal;

[0068] 161, 162: Select terminal;

[0069] 171, 172: input matching circuit;

[0070] 191, 192: matching circuit;

[0071] 251: 1st antenna terminal;

[0072] 252: second antenna terminal;

[0073] 253: signal output terminal;

[0074] 254: signal input terminal;

[0075] 561: core;

[0076] 562: Winding;

[0077] 563: Part 1;

[0078] 564: Part 2;

[0079] 581: core;

[0080] 582: Winding;

[0081] D1: thickness direction;

[0082] D21: Direction 1;

[0083] D22: 2nd direction;

[0084] L1: inductor (third inductor);

[0085] L2: inductor (first inductor);

[0086] L3: inductor (second inductor);

[0087] L4: inductor;

[0088] L5: inductor;

[0089] S1, S2: Overall dimensions. DETAILED DESCRIPTION

[0090] Embodiments 1 to 4 are described below with reference to the accompanying drawings. The drawings referred to in the following embodiments are schematic drawings, and the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual sizes, and the size ratios and thickness ratios between the components do not necessarily reflect the actual size ratios.

[0091] (Implementation Method 1)

[0092] (1) High frequency module

[0093] First, refer to Figure 1 The structure of the high-frequency module 1 according to the first embodiment will be described.

[0094] like Figure 1 As shown, the high-frequency module 1 is used for a communication device 10, for example. The communication device 10 is, for example, a portable phone such as a smart phone. In addition, the communication device 10 is not limited to a portable phone, for example, it can also be a wearable terminal such as a smart watch. The high-frequency module 1 is, for example, a module that can cope with the 4G (4th generation mobile communication) standard, the 5G (5th generation mobile communication) standard, etc. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5GNR (New Radio). The high-frequency module 1 is, for example, a module that can cope with carrier aggregation and dual connectivity.

[0095] The communication device 10 receives the reception signal through the high-frequency module 1 as a receiving module. In addition, the communication device 10 transmits the transmission signal from the transmission module (not shown) input to the high-frequency module 1 via the signal input terminal 254 described later. The communication device 10 switches between transmission and reception, for example, at regular intervals. In the case where the reception signal and the transmission signal are signals of the same frequency band, it is a TDD (Time Division Duplex) signal. TDD is a wireless communication technology that allocates the same frequency band to transmission and reception in wireless communication and switches between transmission and reception at regular intervals. In addition, the transmission signal and part of the reception signal of the communication device 10 may also be an FDD (Frequency Division Duplex) signal. FDD is a wireless communication technology that allocates different frequency bands to transmission and reception in wireless communication and performs transmission and reception.

[0096] (2) Circuit structure of high-frequency module

[0097] Next, refer to Figure 1 The circuit configuration of the high-frequency module 1 according to the first embodiment will be described.

[0098] like Figure 1 As shown, the high-frequency module 1 includes a plurality of (five in the example shown) receiving filters 111 to 115, a plurality of (two in the example shown) low-noise amplifiers 121 and 122, and a plurality of (three in the example shown) switches 13, 14, and 16. In addition, the high-frequency module 1 also includes a plurality of (two in the example shown) input matching circuits 171 and 172, a plurality of (three in the example shown) matching circuits 18, 191, and 192, a low-pass filter 23, and an attenuator 24. In addition, the high-frequency module 1 also includes a plurality of (four in the example shown) external connection terminals 25. Although the high-frequency module 1 is a receiving module in the first embodiment, it may also be a transceiver module that also includes a transmission filter and a power amplifier.

[0099] (2.1) Receive filter

[0100] Each of the plurality of reception filters 111 to 115 is a filter that allows a reception signal to pass. The reception filter 111 has a passband that includes the second reception frequency band, for example. The reception filter 112 has a passband that includes the third reception frequency band, for example. The reception filter 113 has a passband that includes the fourth reception frequency band, for example. The reception filter 114 has a passband that includes the fifth reception frequency band, for example. The reception filter 115 has a passband that includes the first reception frequency band, for example.

[0101] The first receiving frequency band is, for example, Band 26 of the 3GPP LTE standard. The second receiving frequency band is, for example, Band 71 of the 3GPP LTE standard. The third receiving frequency band is, for example, Band 12 of the 3GPP LTE standard. The fourth receiving frequency band is, for example, Band 14 of the 3GPP LTE standard. The fifth receiving frequency band is, for example, Band 20 of the 3GPP LTE standard. In the high-frequency module 1 involved in the first embodiment, the receiving filter 115 is equivalent to the first receiving filter, and the receiving filter 111 is equivalent to the second receiving filter.

[0102] In the high frequency module 1 according to the first embodiment, the first reception frequency band is Band 26, but the first reception frequency band may be Band 8, Band 12, Band 29, Band 13, Band 14, Band 28, or Band 20, for example.

[0103] Each of the plurality of receiving filters 111 to 115 includes an elastic wave filter. The elastic wave filter has a plurality of elastic wave resonators. Each of the plurality of elastic wave resonators is a SAW (Surface Acoustic Wave) resonator. In addition, the plurality of receiving filters 111 to 115 are not limited to elastic wave filters, and may be, for example, a BAW (Bulk Acoustic Wave) filter.

[0104] (2.2) Low Noise Amplifier

[0105] Each of the plurality of low noise amplifiers 121 and 122 is an amplifier for amplifying a received signal with low noise. The low noise amplifier 121 is connected between the receiving filters 111 to 113 and a signal output terminal 253 described later. The low noise amplifier 122 is connected between the receiving filters 114 and 115 and the signal output terminal 253. In the high frequency module 1 according to the first embodiment, the low noise amplifier 121 is equivalent to the second low noise amplifier, and the low noise amplifier 122 is equivalent to the first low noise amplifier.

[0106] Each of the plurality of low noise amplifiers 121 and 122 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low noise amplifier 121 is connected to the input matching circuit 171. The output terminal of the low noise amplifier 121 is connected to the low pass filter 23. In addition, the output terminal of the low noise amplifier 121 is connected to an external circuit (e.g., signal processing circuit 2) via the low pass filter 23, the attenuator 24, and the signal output terminal 253. The input terminal of the low noise amplifier 122 is connected to the input matching circuit 172. The output terminal of the low noise amplifier 122 is connected to the low pass filter 23. In addition, the output terminal of the low noise amplifier 122 is connected to an external circuit (e.g., signal processing circuit 2) via the low pass filter 23, the attenuator 24, and the signal output terminal 253.

[0107] (2.3) Switch

[0108] The switch 13 has two common terminals 130A and 130B and five selection terminals 131 to 135. The switch 13 switches between connection and disconnection between the common terminal 130A and at least one of the five selection terminals 131 to 135, and switches between connection and disconnection between the common terminal 130B and at least one of the five selection terminals 131 to 135. The common terminal 130A is connected to a first antenna terminal 251 described later via the switch 16. The common terminal 130B is connected to a second antenna terminal 252 described later. The selection terminal 131 is connected to an input terminal of the reception filter 111. The selection terminal 132 is connected to an input terminal of the reception filter 112. The selection terminal 133 is connected to an input terminal of the reception filter 113. The selection terminal 134 is connected to an input terminal of the reception filter 114. The selection terminal 135 is connected to an input terminal of the reception filter 115. In the high-frequency module 1 according to the first embodiment, the first antenna terminal 251 and the second antenna terminal 252 correspond to the antenna terminals, and the switch 13 corresponds to the second switch.

[0109] The switch 14 has two common terminals 140A and 140B and five selection terminals 141 to 145. The switch 14 switches between connection and non-connection between the common terminal 140A and at least one of the five selection terminals 141 to 145, and switches between connection and non-connection between the common terminal 140B and at least one of the five selection terminals 141 to 145. The common terminal 140A is connected to the input terminal of the low noise amplifier 121 via the input matching circuit 171. The common terminal 140B is connected to the input terminal of the low noise amplifier 122 via the input matching circuit 172. The selection terminal 141 is connected to the output terminal of the reception filter 111 via the matching circuit 18. The selection terminal 142 is connected to the output terminal of the reception filter 112. The selection terminal 143 is connected to the output terminal of the reception filter 113. The selection terminal 144 is connected to the output terminal of the reception filter 114. The selection terminal 145 is connected to the output terminal of the reception filter 115. In the high-frequency module 1 according to the first embodiment, the switch 14 corresponds to the first switch (switch), the common terminal 140B corresponds to the first common terminal, the common terminal 140A corresponds to the second common terminal, the selection terminal 145 corresponds to the first selection terminal, and the selection terminal 141 corresponds to the second selection terminal.

[0110] The switch 16 has a common terminal 160 and two selection terminals 161 and 162. The common terminal 160 is connected to the first antenna terminal 251. The selection terminal 161 is connected to the common terminal 130A of the switch 13. The selection terminal 162 is connected to a signal input terminal 254 described later. The switch 16 is composed of an SPDT type switch circuit.

[0111] (2.4) Input matching circuit

[0112] The input matching circuit 171 is a structure including an inductor L1. The inductor L1 of the input matching circuit 171 is provided on the input side of the low noise amplifier 121. In more detail, the inductor L1 is connected between the common terminal 140A of the switch 14 and the input terminal of the low noise amplifier 121. In addition, the inductor L1 is connected between the reception filter 111 and the low noise amplifier 121. The input matching circuit 171 matches the impedance of the switch 14 and the low noise amplifier 121.

[0113] The input matching circuit 172 is a structure including an inductor L2. The inductor L2 of the input matching circuit 172 is provided on the input side of the low noise amplifier 122. In more detail, the inductor L2 is connected between the common terminal 140B of the switch 14 and the input terminal of the low noise amplifier 122. In addition, the inductor L2 is connected between the reception filter 115 and the low noise amplifier 122. The input matching circuit 172 matches the impedance of the switch 14 and the low noise amplifier 122.

[0114] In addition, the input matching circuit 171 is not limited to a structure including one inductor L1, and may be, for example, a structure including multiple inductors, or a structure including multiple inductors and multiple capacitors. In addition, the input matching circuit 172 is not limited to a structure including one inductor L2, and may be, for example, a structure including multiple inductors, or a structure including multiple inductors and multiple capacitors. In the high-frequency module 1 involved in the first embodiment, the inductor L2 of the input matching circuit 172 is equivalent to the first inductor, and the inductor L1 of the input matching circuit 171 is equivalent to the third inductor.

[0115] (2.5) Matching circuit

[0116] The matching circuit 18 includes an inductor L3. The inductor L3 of the matching circuit 18 is connected between the output terminal of the reception filter 111 and the selection terminal 141 of the switch 14. The matching circuit 18 matches the impedance of the reception filter 111 and the switch 14. In the high-frequency module 1 according to the first embodiment, the inductor L3 of the matching circuit 18 corresponds to the second inductor.

[0117] The matching circuit 191 includes an inductor L4. The inductor L4 of the matching circuit 191 is connected between a path between the common terminal 130A of the switch 13 and the selection terminal 161 of the switch 16 and the ground. The matching circuit 191 matches the impedances of the switch 13 and the switch 16.

[0118] The matching circuit 192 includes an inductor L5. The inductor L5 of the matching circuit 192 is connected between the path between the second antenna terminal 252 and the common terminal 130B of the switch 13 and the ground. The matching circuit 192 matches the impedance of the second antenna 32 and the switch 13 described later.

[0119] In addition, the matching circuit 18 is not limited to a structure including one inductor L3, and may be, for example, a structure including multiple inductors, or a structure including multiple inductors and multiple capacitors. In addition, the matching circuit 191 is not limited to a structure including one inductor L4, and may be, for example, a structure including multiple inductors, or a structure including multiple inductors and multiple capacitors. In addition, the matching circuit 192 is not limited to a structure including one inductor L5, and may be, for example, a structure including multiple inductors, or a structure including multiple inductors and multiple capacitors.

[0120] (2.6) Low-pass filter

[0121] The low-pass filter 23 is, for example, an LC filter and has a passband including the first reception frequency band, the second reception frequency band, the third reception frequency band, the fourth reception frequency band, and the fifth reception frequency band.

[0122] (2.7) Attenuator

[0123] An attenuator 24 is connected between the low-pass filter 23 and the signal output terminal 253. The attenuator 24 attenuates a reception signal received via a first antenna 31 or a second antenna 32 described later to a predetermined signal level.

[0124] (2.8) External connection terminals

[0125] like Figure 1 As shown, the plurality of external connection terminals 25 are terminals for electrically connecting to an external circuit (e.g., the signal processing circuit 2). The plurality of external connection terminals 25 include a first antenna terminal 251, a second antenna terminal 252, a signal output terminal 253, a signal input terminal 254, and a plurality of ground terminals (not shown).

[0126] The first antenna terminal 251 is connected to the first antenna 31. In the high-frequency module 1, the first antenna terminal 251 is connected to the common terminal 160 of the switch 16. The second antenna terminal 252 is connected to the second antenna 32. In the high-frequency module 1, the second antenna terminal 252 is connected to the common terminal 130B of the switch 13.

[0127] The signal output terminal 253 is a terminal for outputting a reception signal input to the high frequency module 1 via the first antenna terminal 251 or the second antenna terminal 252 to an external circuit (eg, the signal processing circuit 2 ). In the high frequency module 1 , the signal output terminal 253 is connected to the attenuator 24 .

[0128] The signal input terminal 254 is a terminal for inputting a transmission signal from an external circuit (for example, a transmission module not shown) to the high frequency module 1. In the high frequency module 1, the signal input terminal 254 is connected to the selection terminal 162 of the switch 16. In addition, the signal input terminal 254 is connected to the first antenna terminal 251 via the switch 16.

[0129] The plurality of ground terminals are terminals that are electrically connected to a ground electrode of an external substrate (not shown) provided in the communication device 10 and are provided with a ground potential. Figure 2 The ground layer is the circuit ground of the high frequency module 1.

[0130] (3) Circuit structure of communication device

[0131] Next, refer to Figure 1 The circuit configuration of the communication device 10 according to the first embodiment will be described.

[0132] like Figure 1 As shown, the communication device 10 according to the first embodiment includes a high-frequency module 1 , a signal processing circuit 2 , a first antenna 31 , and a second antenna 32 . The signal processing circuit 2 is connected to the high-frequency module 1 .

[0133] (3.1) Signal processing circuit

[0134] The signal processing circuit 2 includes an RF signal processing circuit 21 and a baseband signal processing circuit 22 .

[0135] The RF signal processing circuit 21 is, for example, a RFIC (Radio Frequency Integrated Circuit). The RF signal processing circuit 21 performs signal processing such as up-conversion on the high-frequency signal (transmission signal) output from the baseband signal processing circuit 22, and outputs the high-frequency signal that has undergone signal processing. In addition, the RF signal processing circuit 21 performs signal processing such as down-conversion on the high-frequency signal (received signal) output from the high-frequency module 1, and outputs the high-frequency signal that has undergone signal processing to the baseband signal processing circuit 22.

[0136] The baseband signal processing circuit 22 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 22 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal is, for example, a sound signal or an image signal input from the outside. The baseband signal processing circuit 22 performs IQ modulation processing by synthesizing the I-phase signal and the Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulated signal (IQ signal) in which a carrier signal of a given frequency is amplitude modulated with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 22 is used, for example, as an image signal for image display, or as a sound signal for a call by a user of the communication device 10.

[0137] (3.2) Antenna

[0138] The first antenna 31 is connected to the first antenna terminal 251 of the high-frequency module 1. The second antenna 32 is connected to the second antenna terminal 252 of the high-frequency module 1. The first antenna 31 and the second antenna 32 each have a receiving function of receiving a reception signal from the outside as a radio wave and outputting it to the high-frequency module 1. In addition, the first antenna 31 also has a transmitting function of radiating a transmission signal input to the high-frequency module 1 via the signal input terminal 254 as a radio wave.

[0139] (4) Structure of high-frequency module

[0140] Next, refer to Figure 2 as well as Figure 3 The structure of the high-frequency module 1 according to the first embodiment will be described.

[0141] like Figure 2 as well as Figure 3 As shown, the high-frequency module 1 includes a mounting substrate 4, first electronic components 51 to ninth electronic components 59, and a plurality of (16 in the example shown) external connection terminals 25. In addition, the high-frequency module 1 includes a first resin layer (not shown), a second resin layer (not shown), and a metal electrode layer (not shown).

[0142] The high frequency module 1 can be electrically connected to an external substrate (not shown). The external substrate corresponds to, for example, a communication device 10 such as a mobile phone or a communication device (see Figure 1 ) mother substrate. In addition, the so-called high-frequency module 1 can be electrically connected to the external substrate, which includes not only the case where the high-frequency module 1 is directly mounted on the external substrate, but also the case where the high-frequency module 1 is indirectly mounted on the external substrate. In addition, the so-called case where the high-frequency module 1 is indirectly mounted on the external substrate is the case where the high-frequency module 1 is mounted on another high-frequency module mounted on the external substrate, etc.

[0143] (4.1) Mounting substrate

[0144] like Figure 2 as well as Figure 3 As shown, the mounting substrate 4 has a first main surface 41 and a second main surface 42 that are opposite to each other in the thickness direction D1 of the mounting substrate 4. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of the mounting substrate 4 is, for example, rectangular, but may also be a shape other than a rectangular shape. The mounting substrate 4 is, for example, a multilayer substrate on which a plurality of dielectric layers (not shown) and a plurality of conductive layers (not shown) are stacked. The plurality of conductive layers are formed into a predetermined given pattern for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 4. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. The ground layer of the mounting substrate 4 is electrically connected to at least one ground terminal included in the plurality of external connection terminals 25 via a via conductor of the mounting substrate 4 or the like.

[0145] The mounting substrate 4 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. In addition, the mounting substrate 4 is not limited to an LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, a resin multilayer substrate, or a component-embedded substrate.

[0146] The first to eighth electronic components 51 to 58 are arranged on the first principal surface 41 of the mounting substrate 4. The ninth electronic component 59 is arranged on the second principal surface 42 of the mounting substrate 4. The so-called "the electronic component is arranged on the first principal surface 41 of the mounting substrate 4" includes the case where the electronic component is mounted (mechanically connected) on the first principal surface 41 of the mounting substrate 4 and the case where the electronic component is electrically connected to (the appropriate conductor portion of) the mounting substrate 4. The so-called "the electronic component is arranged on the second principal surface 42 of the mounting substrate 4" includes the case where the electronic component is mounted (mechanically connected) on the second principal surface 42 of the mounting substrate 4 and the case where the electronic component is electrically connected to (the appropriate conductor portion of) the mounting substrate 4. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edges of the first to ninth electronic components 51 to 59 are, for example, rectangular shapes.

[0147] In addition, although Figure 2 as well as Figure 3 Although the electronic components constituting the switches 13 , 14 , 16 , the matching circuits 191 , 192 , the low-pass filter 23 , and the attenuator 24 are omitted from illustration, these electronic components are also arranged on the first main surface 41 or the second main surface 42 of the mounting substrate 4 .

[0148] (4.2) First electronic component

[0149] like Figure 2 As shown in FIG. 1 , the first electronic component 51 is disposed on the first main surface 41 of the mounting substrate 4. Figure 2 In the example, the first electronic component 51 is mounted on the first main surface 41 of the mounting substrate 4. In addition, it is also possible that, in the first electronic component 51, a part of the first electronic component 51 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the first electronic component 51 is built into the mounting substrate 4. In short, the first electronic component 51 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The first electronic component 51 is, for example, an electronic component constituting the reception filter 111. That is, the reception filter 111 (second reception filter) is arranged on the first main surface 41 of the mounting substrate 4.

[0150] (4.3) Second electronic component

[0151] like Figure 2 As shown in FIG. 1 , the second electronic component 52 is arranged on the first main surface 41 of the mounting substrate 4. Figure 2 In the example, the second electronic component 52 is mounted on the first main surface 41 of the mounting substrate 4. In addition, it is also possible that, in the second electronic component 52, a part of the second electronic component 52 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the second electronic component 52 is built into the mounting substrate 4. In short, the second electronic component 52 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The second electronic component 52 is, for example, an electronic component constituting the reception filter 115. That is, the reception filter 115 (first reception filter) is arranged on the first main surface 41 of the mounting substrate 4.

[0152] (4.4) Third electronic component

[0153] like Figure 2 As shown in FIG. 1 , the third electronic component 53 is arranged on the first main surface 41 of the mounting substrate 4. Figure 2 In the example, the third electronic component 53 is mounted on the first main surface 41 of the mounting substrate 4. In addition, in the third electronic component 53, a part of the third electronic component 53 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the third electronic component 53 is built into the mounting substrate 4. In short, the third electronic component 53 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The third electronic component 53 is, for example, an electronic component constituting the reception filter 112.

[0154] (4.5) Fourth electronic component

[0155] like Figure 2As shown, the fourth electronic component 54 is arranged on the first main surface 41 of the mounting substrate 4. Figure 2 In the example, the fourth electronic component 54 is mounted on the first main surface 41 of the mounting substrate 4. In addition, in the fourth electronic component 54, a part of the fourth electronic component 54 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the fourth electronic component 54 is built into the mounting substrate 4. In short, the fourth electronic component 54 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The fourth electronic component 54 is, for example, an electronic component constituting the reception filter 113.

[0156] (4.6) Fifth electronic component

[0157] like Figure 2 As shown, the fifth electronic component 55 is arranged on the first main surface 41 of the mounting substrate 4. Figure 2 In the example, the fifth electronic component 55 is mounted on the first main surface 41 of the mounting substrate 4. In addition, in the fifth electronic component 55, a part of the fifth electronic component 55 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the fifth electronic component 55 is built into the mounting substrate 4. In short, the fifth electronic component 55 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The fifth electronic component 55 is, for example, an electronic component constituting the reception filter 114.

[0158] (4.7) 6th electronic component

[0159] like Figure 2 As shown in FIG. 1 , the sixth electronic component 56 is arranged on the first main surface 41 of the mounting substrate 4. Figure 2 In the example, the sixth electronic component 56 is mounted on the first main surface 41 of the mounting substrate 4. In addition, in the sixth electronic component 56, a part of the sixth electronic component 56 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the sixth electronic component 56 is built into the mounting substrate 4. In short, the sixth electronic component 56 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The sixth electronic component 56 is, for example, an electronic component of the inductor L2 constituting the input matching circuit 172. That is, the inductor L2 (first inductor) is arranged on the first main surface 41 of the mounting substrate 4.

[0160] (4.8) No. 7 Electronic Components

[0161] like Figure 2 As shown in FIG. 1 , the seventh electronic component 57 is arranged on the first main surface 41 of the mounting substrate 4. Figure 2In the example, the seventh electronic component 57 is mounted on the first main surface 41 of the mounting substrate 4. In addition, in the seventh electronic component 57, a part of the seventh electronic component 57 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the seventh electronic component 57 is built into the mounting substrate 4. In short, the seventh electronic component 57 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The seventh electronic component 57 is, for example, an electronic component of the inductor L3 constituting the matching circuit 18. That is, the inductor L3 (second inductor) is arranged on the first main surface 41 of the mounting substrate 4.

[0162] (4.9) No. 8 electronic components

[0163] like Figure 2 As shown in FIG. 1 , the eighth electronic component 58 is disposed on the first main surface 41 of the mounting substrate 4. Figure 2 In the example, the eighth electronic component 58 is mounted on the first main surface 41 of the mounting substrate 4. In addition, in the eighth electronic component 58, a part of the eighth electronic component 58 is mounted on the first main surface 41 of the mounting substrate 4, and the remaining part of the eighth electronic component 58 is built into the mounting substrate 4. In short, the eighth electronic component 58 is located on the first main surface 41 side of the second main surface 42 in the mounting substrate 4, and has at least a part mounted on the first main surface 41. The eighth electronic component 58 is, for example, an electronic component of the inductor L1 constituting the input matching circuit 171. That is, the inductor L1 (third inductor) is arranged on the first main surface 41 of the mounting substrate 4.

[0164] (4.10) 9th electronic component

[0165] like Figure 3 As shown in FIG. 1 , the ninth electronic component 59 is arranged on the second main surface 42 of the mounting substrate 4. Figure 3 In the example, the 9th electronic component 59 is mounted on the second main surface 42 of the mounting substrate 4. In addition, it is also possible that, in the 9th electronic component 59, a part of the 9th electronic component 59 is mounted on the second main surface 42 of the mounting substrate 4, and the remaining part of the 9th electronic component 59 is built into the mounting substrate 4. In short, the 9th electronic component 59 is located on the second main surface 42 side of the first main surface 41 in the mounting substrate 4, and has at least a part mounted on the second main surface 42. The 9th electronic component 59 is, for example, an IC chip 6. That is, the IC chip 6 is arranged on the second main surface 42 of the mounting substrate 4. The IC chip 6 includes a low noise amplifier 121, a low noise amplifier 122 and a switch 14.

[0166] (4.11) External connection terminals

[0167] The plurality of external connection terminals 25 are terminals for electrically connecting the mounting substrate 4 and an external substrate (not shown).

[0168] like Figure 3 As shown, the plurality of external connection terminals 25 are arranged on the second main surface 42 of the mounting substrate 4. The so-called "the external connection terminals 25 are arranged on the second main surface 42 of the mounting substrate 4" includes the case where the external connection terminals 25 are mechanically connected to the second main surface 42 of the mounting substrate 4 and the case where the external connection terminals 25 are electrically connected to (an appropriate conductor portion of) the mounting substrate 4. The material of the plurality of external connection terminals 25 is, for example, metal (for example, copper, copper alloy, etc.). Each of the plurality of external connection terminals 25 is a columnar electrode (for example, a cylindrical electrode).

[0169] (4.12) Resin layer and metal electrode layer

[0170] The first resin layer is disposed on the first main surface 41 of the mounting substrate 4, and covers the first electronic component 51 to the eighth electronic component 58 and the first main surface 41 of the mounting substrate 4. The first resin layer has electrical insulation properties. The first resin layer includes a resin (e.g., an epoxy resin). The first resin layer may also include a filler in addition to the resin.

[0171] The second resin layer is arranged on the second main surface 42 of the mounting substrate 4. The second resin layer covers the outer peripheral surface and the top surface of the 9th electronic component 59 arranged on the second main surface 42 of the mounting substrate 4 and the outer peripheral surface of each of the plurality of external connection terminals 25. The second resin layer does not cover the main surface of the 9th electronic component 59 on the opposite side to the mounting substrate 4 side. The second resin layer has electrical insulation. The second resin layer contains resin (for example, epoxy resin). The second resin layer may also contain filler in addition to the resin. The material of the second resin layer may be the same material as the material of the first resin layer, or may be a material different from the material of the first resin layer.

[0172] The metal electrode layer covers the first resin layer, the mounting substrate 4, and the second resin layer. More specifically, the metal electrode layer covers the main surface and the peripheral surface of the first resin layer on the side opposite to the mounting substrate 4, the peripheral surface of the mounting substrate 4, and the peripheral surface of the second resin layer. On the other hand, the metal electrode layer does not cover the main surface of the second resin layer on the side opposite to the mounting substrate 4.

[0173] The metal electrode layer has conductivity. In the high-frequency module 1, the metal electrode layer is a shielding layer provided for the purpose of electromagnetic shielding inside and outside the high-frequency module 1. The metal electrode layer contacts at least a portion of the outer peripheral surface of the ground layer of the mounting substrate 4. Thus, the potential of the metal electrode layer can be made the same as the potential of the ground layer. The metal electrode layer has a multilayer structure in which a plurality of metal layers are stacked, but is not limited to a multilayer structure and may also be a single metal layer. The metal layer contains one or more metals.

[0174] (5) Inductor structure

[0175] Next, refer to Figure 2 The structures of the inductors L1 and L2 constituting the input matching circuits 171 and 172 are described below. Figure 2 , regarding the sixth electronic component 56 and the eighth electronic component 58, a state in which the core and the winding arranged inside are allowed to be transmitted is shown.

[0176] like Figure 2 As shown, the inductor L1 (third inductor) formed by the eighth electronic component 58 has a core 581 and a winding 582. In the inductor L1, the winding 582 is densely wound across the entire length of the axial portion of the core 581 extending along the first direction D21. Figure 2 In the example of , the winding central axis of the inductor L1 is along the first direction D21.

[0177] like Figure 2 As shown, the inductor L2 (first inductor) formed by the sixth electronic component 56 has a core 561 and a winding 562. In addition, the inductor L2 has a first portion 563 and a second portion 564. The first portion 563 is a portion of the axis of the core 561 where a part of the winding 562 is densely wound along the first direction D21. The second portion 564 is a portion of the axis of the core 561 where the remaining part of the winding 562 is sparsely wound along the first direction D21. That is, the inductor L2 is configured in the first main surface 41 of the mounting substrate 4 so that the first portion 563 and the second portion 564 are arranged in the first direction D21. Here, the so-called "sparsely wound winding 562" includes a state in which the winding 562 is not wound at all relative to the axis of the core 561 and a state in which the winding 562 is wound at intervals relative to the axis of the core 561. Figure 2 In the example of FIG. 5 , the winding 562 is not wound at all around the second portion 564 of the inductor L2 .

[0178] That is, the inductor L2 has a first portion 563 as a dense portion and a second portion 564 as a sparse portion. Here, the so-called "sparse portion" includes a portion where the number of turns of the winding 562 per unit length of the core is smaller than that of the dense portion, a portion where the winding 562 is less than one turn, and a portion where the winding 562 is not wound at all.

[0179] In addition, if Figure 2 As shown, when viewed from above in the thickness direction D1 of the mounting substrate 4, the outer dimension S1 of the inductor L2 (first inductor) is larger than the outer dimension S2 of the inductor L3 (second inductor) formed by the seventh electronic component 57. Here, the outer dimensions S1 and S2 are the areas of the inductors L2 and L3 when viewed from above in the thickness direction D1 of the mounting substrate 4.

[0180] (6) Layout

[0181] Next, refer to Figure 2 as well as Figure 3 The layout of the high-frequency module 1 will be described.

[0182] As described above, the first to eighth electronic components 51 to 58 are arranged on the first main surface 41 of the mounting substrate 4. Furthermore, as described above, the ninth electronic component 59 and the plurality of external connection terminals 25 are arranged on the second main surface 42 of the mounting substrate 4. Figure 3 In the example, the ninth electronic component 59 is arranged at the center of the second main surface 42 of the mounting substrate 4 , and the plurality of external connection terminals 25 are arranged around the ninth electronic component 59 so as to surround the ninth electronic component 59 .

[0183] The first electronic component 51 and the second electronic component 52 are arranged in the first direction D21. That is, when viewed from above in the thickness direction D1 of the mounting substrate 4, the receiving filter 115 (first receiving filter) and the receiving filter 111 (second receiving filter) are arranged in the first direction D21. In more detail, in the first direction D21, the first electronic component 51 and the second electronic component 52 are adjacent. The so-called "the first electronic component 51 and the second electronic component 52 are adjacent" means that the first electronic component 51 and the second electronic component 52 are arranged so that no other electronic components are arranged between the first electronic component 51 and the second electronic component 52. In embodiment 1, the first direction D21 is a direction orthogonal to the thickness direction D1 of the mounting substrate 4, and is a direction along the long dimension direction ( Figure 2 direction of the left and right direction).

[0184] The second electronic component 52 and the third electronic component 53 are arranged in the first direction D21. More specifically, in the first direction D21, the second electronic component 52 and the third electronic component 53 are adjacent to each other. In addition, the third electronic component 53, the fourth electronic component 54, and the fifth electronic component 55 are sequentially arranged in the second direction D22 that is orthogonal to the first direction D21. More specifically, in the second direction D22, the third electronic component 53 and the fourth electronic component 54 are adjacent to each other, and the fourth electronic component 54 and the fifth electronic component 55 are adjacent to each other. In Embodiment 1, the second direction D22 is a direction (orthogonal direction) that is orthogonal to both the thickness direction D1 of the mounting substrate 4 and the first direction D21, and is a direction along the short dimension direction ( Figure 2 direction of the up and down direction).

[0185] The first electronic component 51 and the sixth electronic component 56 are arranged in the second direction D22. That is, the reception filter 111 (second reception filter) and the inductor L2 (first inductor) are arranged in the second direction D22 when viewed from above in the thickness direction D1 of the mounting substrate 4. More specifically, the first electronic component 51 and the sixth electronic component 56 are adjacent to each other in the second direction D22.

[0186] In addition, the second electronic component 52 and the seventh electronic component 57 are arranged in the second direction D22. That is, the reception filter 115 (first reception filter) and the inductor L3 (second inductor) are arranged in the second direction D22 when viewed from above in the thickness direction D1 of the mounting substrate 4. More specifically, the second electronic component 52 and the seventh electronic component 57 are adjacent to each other in the second direction D22.

[0187] The eighth electronic component 58 is arranged on the opposite side of the second electronic component 52 with respect to the seventh electronic component 57 in the second direction D22. That is, the inductor L3 (second inductor) is arranged between the inductor L1 (third inductor) and the reception filter 115 (first reception filter) in the second direction D22.

[0188] Here, if Figure 2 As shown in FIG. 1 , the inductor L2 formed of the sixth electronic component 56 is arranged such that, in a plan view from the thickness direction D1 of the mounting substrate 4, in the first direction D21, the first portion 563 is on the first electronic component 51 side, and the second portion 564 is on the second electronic component 52 side. Thus, in the second direction D22, the first portion 563 of the inductor L2 does not overlap with the reception filter 115. The so-called "the first portion 563 of the inductor L2 does not overlap with the reception filter 115" includes a state in which a part of the first portion 563 of the inductor L2 does not overlap with the reception filter 115 and a state in which the entire first portion 563 of the inductor L2 does not overlap with the reception filter 115. That is, the so-called "the first portion 563 of the inductor L2 does not overlap with the reception filter 115" means that at least a part of the first portion 563 of the inductor L2 does not overlap with the reception filter 115. In the high-frequency module 1 according to the first embodiment, the second direction D22 corresponds to the orthogonal direction.

[0189] (7) Effect

[0190] The high-frequency module 1 according to the first embodiment includes a reception filter 115 (first reception filter), a reception filter 111 (second reception filter), a low-noise amplifier 122, an inductor L2 (first inductor), an inductor L3 (second inductor), and a mounting substrate 4. The reception filter 115 has a passband including a first reception frequency band. The reception filter 111 has a passband including a second reception frequency band different from the first reception frequency band. The inductor L2 has a core 561 and a winding 562, and is connected between the reception filter 115 and the low-noise amplifier 122. The inductor L3 is connected to the output terminal of the reception filter 111. The mounting substrate 4 has a first main surface 41 and a second main surface 42 facing each other. The reception filter 115, the reception filter 111, the inductor L2, and the inductor L3 are arranged on the first main surface 41 of the mounting substrate 4. The outer dimension S1 of the inductor L2 is larger than the outer dimension S2 of the inductor L3 when viewed from above in the thickness direction D1 of the mounting substrate 4. The inductor L2 includes a first portion 563 in which a part of the winding 562 is densely wound, and a second portion 564 in which the remaining part of the winding 562 is sparsely wound. In the second direction D22 orthogonal to the thickness direction D1, the first portion 563 of the inductor L2 and the reception filter 115 do not overlap.

[0191] In the high-frequency module 1 involved in embodiment 1, the portion of the inductor L2 where a part of the winding 562 is densely wound and the receiving filter 115 do not overlap in the second direction D22 orthogonal to the thickness direction D1 of the mounting substrate 4, so that the electromagnetic field of the inductor L2 can be suppressed from interfering with the receiving filter 115, and the degradation of the attenuation characteristics of the receiving filter 115 can be reduced.

[0192] In the high frequency module 1 involved in the first embodiment, there are a reception filter 115 (first reception filter), a reception filter 111 (second reception filter), a low noise amplifier 122, an inductor L2 (first inductor), an inductor L3 (second inductor), and a mounting substrate 4. The reception filter 115 has a passband including a first reception frequency band. The reception filter 111 has a passband including a second reception frequency band different from the first reception frequency band. The inductor L2 has a core 561 and a winding 562, and is connected between the reception filter 115 and the low noise amplifier 122. The inductor L3 is connected to the output terminal of the reception filter 111. The mounting substrate 4 has a first main surface 41 and a second main surface 42 facing each other. The reception filter 115, the reception filter 111, the inductor L2, and the inductor L3 are arranged on the first main surface 41 of the mounting substrate 4. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer dimension S1 of the inductor L2 is larger than the outer dimension S2 of the inductor L3. When viewed from above in the thickness direction D1 of the mounting substrate 4, the reception filter 115 and the reception filter 111 are arranged in a first direction D21 orthogonal to the thickness direction D1. When viewed from above in the thickness direction D1 of the mounting substrate 4, the reception filter 111 and the inductor L2 are arranged in a second direction D22 orthogonal to both the thickness direction D1 and the first direction D21, and the reception filter 115 and the inductor L3 are arranged in the second direction D22 orthogonal to both the thickness direction D1 and the first direction D21.

[0193] In the high-frequency module 1 according to the first embodiment, the reception filter 115 and the reception filter 111 are adjacent to each other in the first direction D21 orthogonal to the thickness direction D1 of the mounting substrate 4, and the inductor L2 and the reception filter 111 are adjacent to each other in the second direction D22 orthogonal to both the thickness direction D1 of the mounting substrate 4 and the first direction D21, and the inductor L3 and the reception filter 115 are adjacent to each other. That is, the inductor L2 and the reception filter 115 do not overlap in the second direction D22, so that the electromagnetic field of the inductor L2 can be suppressed from interfering with the reception filter 115, and the degradation of the attenuation characteristics of the reception filter 115 can be reduced.

[0194] In the high frequency module 1 according to the first embodiment, by providing three inductors L1 to L3 for the five reception filters 111 to 115 , the characteristics of the five reception filters 111 to 115 can be satisfied. As a result, the high frequency module 1 can also be miniaturized.

[0195] In the high frequency module 1 according to the first embodiment, the inductor L3 (second inductor) is arranged between the inductor L1 (third inductor) and the reception filter 115 (first reception filter) in the second direction D22. This can reduce the degradation of the attenuation characteristics of the filter caused by the electromagnetic field coupling between the inductor L1 and the inductor L3.

[0196] In the high-frequency module 1 according to the first embodiment, the characteristics of a plurality of reception filters (the reception filters 114 and 115 in the illustrated example) can be satisfied by the inductor L2 (first inductor) connected to the common terminal 140B of the switch 14 .

[0197] Furthermore, in the high-frequency module 1 according to the first embodiment, the low-noise amplifiers 121 and 122 and the switch 14 are included in one IC chip 6 . This enables the mounting substrate 4 to be miniaturized when viewed from above in the thickness direction D1 of the mounting substrate 4 .

[0198] Furthermore, in the high-frequency module 1 according to the first embodiment, the IC chip 6 is disposed on the second main surface 42 of the mounting substrate 4. This allows further miniaturization of the mounting substrate 4 when viewed from above in the thickness direction D1 of the mounting substrate 4.

[0199] (8) Modification

[0200] Next, refer to Figure 4 as well as Figure 5 A high-frequency module 1 according to a modified example of the first embodiment will be described.

[0201] In the high frequency module 1 according to the first embodiment, Figure 2 As shown in FIG. 1 , the inductor L2 formed by the sixth electronic component 56 is arranged in such a direction that, in the first direction D21, the first portion 563 is on the first electronic component 51 side and the second portion 564 is on the second electronic component 52 side. Figure 4 As shown, the inductor L2 may be arranged in such a direction that, in the first direction D21, the second portion 564 is on the first electronic component 51 side and the first portion 563 is on the second electronic component 52 side. In this case, it is also preferable to Figure 4 As shown, in the second direction D22 (orthogonal direction) orthogonal to the thickness direction D1 of the mounting substrate 4, the first portion 563 of the inductor L2 (first inductor) and the reception filter 115 (first reception filter) do not overlap.

[0202] Figure 5 : is a graph showing the attenuation characteristics of the received signal of Band 26 that passes through the receiving filter 115 in the transmission band. Figure 5 In the figure, the solid line is Figure 2The attenuation characteristics corresponding to the configuration example shown are shown in the figure. The dotted line is Figure 4 The attenuation characteristics corresponding to the configuration example shown. Figure 5 , Figure 2 The attenuation characteristics and Figure 4 The variation in attenuation characteristics in the illustrated arrangement example is small. That is, according to the high-frequency module 1 , the variation in attenuation characteristics due to the orientation of the inductor L2 in the first direction D21 can be reduced.

[0203] In the high-frequency module 1 according to the modification of the first embodiment, as in the high-frequency module 1 according to the first embodiment, it is possible to achieve both reduction in degradation of the attenuation characteristics of the filter and reduction in size.

[0204] (Implementation Method 2)

[0205] Reference Figure 6 A high-frequency module 1 according to a second embodiment will be described. The high-frequency module 1 according to the second embodiment is different from the high-frequency module 1 according to the first embodiment (see Figure 2 as well as Figure 3 ) The same structure is marked with the same figure mark and the description is omitted.

[0206] The high-frequency module 1 according to the second embodiment is different from the high-frequency module 1 according to the first embodiment in that Figure 6 As shown, in a plan view from the thickness direction D1 of the mounting substrate 4 , the seventh electronic component 57 constituting the inductor L3 is oriented 90 degrees apart.

[0207] That is, in the high frequency module 1 according to the second embodiment, the seventh electronic component 57 is arranged on the first main surface 41 of the mounting substrate 4 in an orientation such that the seventh electronic component 57 has a long dimension along the first direction D21 and a short dimension along the second direction D22.

[0208] In the high-frequency module 1 according to the second embodiment, as in the high-frequency module 1 according to the first embodiment, it is possible to achieve both reduction in degradation of the attenuation characteristics of the filter and reduction in size.

[0209] In addition, in the high-frequency module 1 involved in embodiment 2, similarly to the high-frequency module 1 involved in the variation of embodiment 1, the inductor L2 is arranged on the first main surface 41 of the mounting substrate 4 in the following orientation, that is, in the first direction D21, the second part 564 becomes the side of the first electronic component 51, and the first part 563 becomes the side of the second electronic component 52.

[0210] (Implementation method 3)

[0211] Reference Figure 7A high-frequency module 1 according to a third embodiment will be described. The high-frequency module 1 according to the third embodiment is different from the high-frequency module 1 according to the first embodiment (see Figure 2 as well as Figure 3 ) The same structure is marked with the same figure mark and the description is omitted.

[0212] The high-frequency module 1 according to the third embodiment is different from the high-frequency module 1 according to the first embodiment in that Figure 7 As shown, in a plan view from the thickness direction D1 of the mounting substrate 4 , the sixth electronic component 56 constituting the inductor L2 is oriented 90 degrees apart.

[0213] That is, in the high frequency module 1 according to the third embodiment, the sixth electronic component 56 is arranged on the first main surface 41 of the mounting substrate 4 in such an orientation that the long dimension of the sixth electronic component 56 is along the second direction D22 and the short dimension of the sixth electronic component 56 is along the first direction D21. More specifically, the sixth electronic component 56 is arranged on the first main surface 41 of the mounting substrate 4 so that the winding center axis of the inductor L2 is along the second direction D22.

[0214] In this case, if Figure 7 As shown, the inductor L2 is preferably arranged on the first main surface 41 of the mounting substrate 4 in an orientation such that the second portion 564 is on the first electronic component 51 side and the first portion 563 is on the opposite side to the first electronic component 51 side in the second direction D22.

[0215] In the high-frequency module 1 according to the third embodiment, as in the high-frequency module 1 according to the first embodiment, it is possible to achieve both reduction in degradation of the attenuation characteristics of the filter and reduction in size.

[0216] Alternatively, the inductor L2 may be disposed on the first main surface 41 of the mounting substrate 4 in an orientation such that the first portion 563 is on the first electronic component 51 side and the second portion 564 is on the opposite side to the first electronic component 51 side in the second direction D22.

[0217] (Implementation 4)

[0218] Reference Figure 8 A high-frequency module 1 according to a fourth embodiment will be described. The high-frequency module 1 according to the fourth embodiment is different from the high-frequency module 1 according to the first embodiment (see Figure 2 as well as Figure 3 ) The same structure is marked with the same figure mark and the description is omitted.

[0219] The high-frequency module 1 according to the fourth embodiment is different from the high-frequency module 1 according to the first embodiment in that Figure 8As shown, in a plan view from the thickness direction D1 of the mounting substrate 4 , the eighth electronic component 58 constituting the inductor L1 is arranged between the second electronic component 52 constituting the reception filter 115 and the seventh electronic component 57 constituting the inductor L3 in the second direction D22 .

[0220] That is, in the high frequency module 1 according to the fourth embodiment, the inductor L1 as the third inductor is arranged between the inductor L3 as the second inductor and the reception filter 115 as the first reception filter in the second direction D22 when viewed from above in the thickness direction D1 of the mounting substrate 4 .

[0221] In the high-frequency module 1 according to the fourth embodiment, as in the high-frequency module 1 according to the first embodiment, it is possible to achieve both reduction in degradation of the attenuation characteristics of the filter and reduction in size.

[0222] In addition, in the high-frequency module 1 involved in embodiment 4, similarly to the high-frequency module 1 involved in the variation of embodiment 1, the inductor L2 is arranged on the first main surface 41 of the mounting substrate 4 in the following orientation, that is, in the first direction D21, the second part 564 becomes the side of the first electronic component 51, and the first part 563 becomes the side of the second electronic component 52.

[0223] (Way)

[0224] The following aspects are disclosed in this specification.

[0225] The high-frequency module (1) involved in the first embodiment comprises a first receiving filter (115), a second receiving filter (111), a first low-noise amplifier (122), a first inductor (L2), a second inductor (L3), and a mounting substrate (4). The first receiving filter (115) has a passband including a first receiving frequency band. The second receiving filter (111) has a passband including a second receiving frequency band different from the first receiving frequency band. The first inductor (L2) has a core (561) and a winding (562), and is connected between the first receiving filter (115) and the first low-noise amplifier (122). The second inductor (L3) is connected to the output terminal of the second receiving filter (111). The mounting substrate (4) has a first main surface (41) and a second main surface (42) facing each other. A first reception filter (115), a second reception filter (111), a first inductor (L2), and a second inductor (L3) are arranged on a first main surface (41) of a mounting substrate (4). When viewed from above in a thickness direction (D1) of the mounting substrate (4), an outer dimension (S1) of the first inductor (L2) is larger than an outer dimension (S2) of the second inductor (L3). The first inductor (L2) includes a first portion (563) on which a portion of a winding (562) is densely wound, and a second portion (564) on which the remaining portion of the winding (562) is sparsely wound. In an orthogonal direction (D22) orthogonal to the thickness direction (D1), the first portion (563) of the first inductor (L2) and the first reception filter (115) do not overlap.

[0226] According to this aspect, it is possible to reduce the degradation of the attenuation characteristics of the filter.

[0227] The high-frequency module (1) involved in the second embodiment comprises a first receiving filter (115), a second receiving filter (111), a first low-noise amplifier (122), a first inductor (L2), a second inductor (L3), and a mounting substrate (4). The first receiving filter (115) has a passband including a first receiving frequency band. The second receiving filter (111) has a passband including a second receiving frequency band different from the first receiving frequency band. The first inductor (L2) has a core (561) and a winding (562), and is connected between the first receiving filter (115) and the first low-noise amplifier (122). The second inductor (L3) is connected to the output terminal of the second receiving filter (111). The mounting substrate (4) has a first main surface (41) and a second main surface (42) facing each other. A first reception filter (115), a second reception filter (111), a first inductor (L2), and a second inductor (L3) are arranged on a first main surface (41) of a mounting substrate (4). When viewed from above in a thickness direction (D1) of the mounting substrate (4), an outer dimension (S1) of the first inductor (L2) is larger than an outer dimension (S2) of the second inductor (L3). When viewed from above in a thickness direction (D1) of the mounting substrate (4), the first reception filter (115) and the second reception filter (111) are arranged in a first direction (D21) orthogonal to the thickness direction (D1). When viewed from above in the thickness direction (D1) of the mounting substrate (4), the second receiving filter (111) and the first inductor (L2) are arranged in a second direction (D22) that is orthogonal to both the thickness direction (D1) and the first direction (D21), and the first receiving filter (115) and the second inductor (L3) are arranged in a second direction (D22) that is orthogonal to both the thickness direction (D1) and the first direction (D21).

[0228] According to this aspect, it is possible to reduce the degradation of the attenuation characteristics of the filter.

[0229] The high-frequency module (1) according to the third embodiment is, in the first embodiment, further comprising a second low-noise amplifier (121) and a third inductor (L1). The third inductor (L1) has a core (581) and a winding (582), and is connected between the second reception filter (111) and the second low-noise amplifier (121). The third inductor (L1) is arranged on the first main surface (41) of the mounting substrate (4). One of the second inductor (L3) and the third inductor (L1) is arranged between the other of the second inductor (L3) and the third inductor (L1) and the first reception filter (115) in an orthogonal direction (D22).

[0230] According to this aspect, it is possible to reduce the degradation of the attenuation characteristics of the filter due to the electromagnetic field coupling between the second inductor (L3) and the third inductor (L1).

[0231] The high-frequency module (1) according to the fourth embodiment is further provided with a second low-noise amplifier (121) and a third inductor (L1) in the second embodiment. The third inductor (L1) has a core (581) and a winding (582), and is connected between the second reception filter (111) and the second low-noise amplifier (121). The third inductor (L1) is arranged on the first main surface (41) of the mounting substrate (4). When viewed from above in the thickness direction (D1) of the mounting substrate (4), the second inductor (L3) is arranged in the second direction (D22) between the third inductor (L1) and the first reception filter (115).

[0232] According to this aspect, it is possible to reduce the degradation of the attenuation characteristics of the filter due to the electromagnetic field coupling between the second inductor (L3) and the third inductor (L1).

[0233] The high-frequency module (1) according to the fifth aspect is, in any one of the first to fourth aspects, further comprising a second low-noise amplifier (121), a first switch (14), and a third inductor (L1). The first switch (14) has a first common terminal (140B), a second common terminal (140A), a first selection terminal (145), and a second selection terminal (141). The third inductor (L1) has a core (581) and a winding (582), and is connected between the second reception filter (111) and the second low-noise amplifier (121). The first selection terminal (145) is connected to an output terminal of the first reception filter (115). The second selection terminal (141) is connected to an output terminal of the second reception filter (111) via a second inductor (L3). The first common terminal (140B) is connected to an input terminal of the first low-noise amplifier (122) via the first inductor (L2). The second common terminal (140A) is connected to an input terminal of a second low-noise amplifier (121) via a third inductor (L1).

[0234] According to this aspect, the first inductor (L2) connected to the first common terminal (140B) of the first switch (14) can satisfy the characteristics of a plurality of reception filters (reception filters 114, 115).

[0235] The high frequency module (1) according to the sixth aspect is further provided with a second low noise amplifier (121) in the fifth aspect. The first low noise amplifier (122), the second low noise amplifier (121) and the first switch (14) are included in one IC chip (6).

[0236] According to this embodiment, the mounting substrate (4) can be miniaturized when viewed from above in the thickness direction (D1) of the mounting substrate (4).

[0237] In the high-frequency module (1) according to the seventh aspect, in the sixth aspect, the IC chip (6) is arranged on the second main surface (42) of the mounting substrate (4).

[0238] According to this embodiment, the mounting substrate (4) can be further miniaturized when viewed from above in the thickness direction (D1) of the mounting substrate (4).

[0239] The high frequency module (1) according to the eighth aspect is, in any one of the fifth to seventh aspects, further comprising antenna terminals (251, 252) and a second switch (13). The second switch (13) is connected between the input terminal of the first reception filter (115) and the input terminal of the second reception filter (111) and the antenna terminals (251, 252).

[0240] In the high frequency module (1) according to the ninth aspect, in any one of the first to eighth aspects, the first reception frequency band is Band 26, Band 8, Band 12, Band 29, Band 13, Band 14, Band 28 or Band 20 of the 3GPP LTE standard.

[0241] In the high frequency module (1) according to a tenth aspect, in any one of the first to ninth aspects, the second reception frequency band is Band 71 of the 3GPP LTE standard.

[0242] A communication device (10) according to an eleventh aspect comprises a high frequency module (1) and a signal processing circuit (2) according to any one of the first to tenth aspects. The signal processing circuit (2) is connected to the high frequency module (1).

[0243] According to this aspect, it is possible to reduce the degradation of the attenuation characteristics of the filter.

Claims

1. A high frequency module, comprising: A first reception filter having a passband including a first reception frequency band; a second reception filter having a passband including a second reception frequency band different from the first reception frequency band; No. 1 low noise amplifier; a first inductor having a core and a winding and connected between the first reception filter and the first low noise amplifier; a second inductor connected to an output terminal of the second reception filter; as well as The mounting substrate has a first main surface and a second main surface facing each other. The first reception filter, the second reception filter, the first inductor, and the second inductor are arranged on the first main surface of the mounting substrate. When viewed from above in the thickness direction of the mounting substrate, the first inductor has an outer dimension larger than that of the second inductor. The first inductor has: a first portion on which a portion of the winding is densely wound; and Part 2, sparsely wound with the remainder of the winding, The first portion of the first inductor and the first reception filter do not overlap in a direction orthogonal to the thickness direction.

2. The high frequency module according to claim 1, wherein: Also available: a second low noise amplifier; and a third inductor having a core and a winding and connected between the second reception filter and the second low noise amplifier, The third inductor is arranged on the first main surface of the mounting substrate. One of the second inductor and the third inductor is arranged between the other of the second inductor and the third inductor and the first reception filter in the orthogonal direction.

3. A high frequency module, comprising: A first reception filter having a passband including a first reception frequency band; a second reception filter having a passband including a second reception frequency band different from the first reception frequency band; No. 1 low noise amplifier; a first inductor having a core and a winding and connected between the first reception filter and the first low noise amplifier; a second inductor connected to an output terminal of the second reception filter; as well as The mounting substrate has a first main surface and a second main surface facing each other. The first reception filter, the second reception filter, the first inductor, and the second inductor are arranged on the first main surface of the mounting substrate. When viewed from above in the thickness direction of the mounting substrate, The first inductor has an outer dimension larger than that of the second inductor. The first receiving filter and the second receiving filter are arranged in a first direction orthogonal to the thickness direction. The second reception filter and the first inductor are arranged in a second direction orthogonal to both the thickness direction and the first direction, and the first reception filter and the second inductor are arranged in a second direction orthogonal to both the thickness direction and the first direction.

4. The high frequency module according to claim 3, wherein: Also available: a second low noise amplifier; and a third inductor having a core and a winding and connected between the second reception filter and the second low noise amplifier, The third inductor is arranged on the first main surface of the mounting substrate. The second inductor is arranged between the third inductor and the first reception filter in the second direction.

5. The high frequency module according to any one of claims 1 to 4, wherein: Also available: 2nd low noise amplifier; a first switch having a first common terminal, a second common terminal, a first selection terminal, and a second selection terminal; and a third inductor having a core and a winding and connected between the second reception filter and the second low noise amplifier, The first selection terminal is connected to the output terminal of the first reception filter. The second selection terminal is connected to the output terminal of the second reception filter via the second inductor. The first common terminal is connected to an input terminal of the first low noise amplifier via the first inductor. The second common terminal is connected to an input terminal of the second low-noise amplifier via the third inductor.

6. The high frequency module according to claim 5, wherein: The first low noise amplifier, the second low noise amplifier, and the first switch are included in one IC chip.

7. The high frequency module according to claim 6, wherein: The IC chip is arranged on the second main surface of the mounting substrate.

8. The high frequency module according to any one of claims 5 to 7, wherein: Also available: antenna terminal; and The second switch, The second switch is connected between an input terminal of the first reception filter, an input terminal of the second reception filter, and the antenna terminal.

9. The high frequency module according to any one of claims 1 to 8, wherein: The first receiving frequency band is Band 26, Band 8, Band 12, Band 29, Band 13, Band 14, Band 28 or Band 20 of the 3GPP LTE standard.

10. The high frequency module according to any one of claims 1 to 9, wherein: The second receiving frequency band is Band 71 of the 3GPP LTE standard.

11. A communication device comprising: The high frequency module according to any one of claims 1 to 10; and The signal processing circuit is connected to the high frequency module.

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