Field effect transistor and preparation method thereof
By using fluorinated two-dimensional diamond nanosheet film as the channel layer, the problems of production difficulty and electrical performance of diamond channel layer are solved, and low production difficulty and good electrical performance are achieved.
Patent Information
- Application Number
- CN202311083854.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-25
- Publication Date
- 2025-03-04
AI Technical Summary
The prior art is difficult to effectively reduce the difficulty of making diamond channel layers and enable their electrical performance to reach a higher level.
A fluorinated two-dimensional diamond-like nanosheet film is used as the channel layer, and a two-dimensional diamond-like field effect transistor is prepared by providing pre-prepared electrodes, forming a fluorinated two-dimensional diamond-like nanosheet film, plus a dielectric layer and a gate electrode.
Compared with the use of diamond to make the channel layer, the preparation of fluorinated two-dimensional diamond nanosheet film is less difficult and can maintain good electrical performance.
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Figure CN119562557A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a field effect transistor and a method for preparing the same. Background Art
[0002] Diamond has extremely high thermal conductivity, mechanical hardness, and carrier saturation mobility, and is the most valuable material used in two-dimensional diamond-like field-effect transistors. The use of diamond to make the channel layer of a two-dimensional diamond-like field-effect transistor can make the channel layer have better electrical properties. However, natural diamond is relatively rare and expensive, and diamond is generally prepared from graphite. However, graphite is a more stable phase than diamond under atmospheric pressure, and the use of graphite to prepare large-area, uniform single-crystal diamond films (or substrates) is still a challenge, resulting in greater difficulty in using diamond to make channel layers.
[0003] How to reduce the difficulty of manufacturing the channel layer and make the channel layer have better electrical properties has become an urgent problem to be solved. Summary of the invention
[0004] In response to the above technical problems, the present application provides a field effect transistor and a method for preparing the same, which can reduce the difficulty of manufacturing a channel layer and enable the channel layer to have better electrical properties.
[0005] The present application provides a method for preparing a field effect transistor, comprising: providing a pre-prepared electrode, wherein the pre-prepared electrode comprises a substrate, and a source electrode and a drain electrode arranged on the surface of the substrate; forming a fluorinated two-dimensional diamond-like nanosheet film between the source electrode and the drain electrode to obtain a channel layer; forming a dielectric layer on the channel layer; forming a gate electrode on the dielectric layer; and obtaining a two-dimensional diamond-like field effect transistor.
[0006] In one embodiment, providing the pre-prepared electrode includes: providing the substrate and coating the surface of the substrate with a photoresist; patterning the side of the substrate coated with the photoresist using electron beam exposure; and depositing metal on the side of the substrate subjected to the patterning to obtain the pre-prepared electrode.
[0007] In one embodiment, the step of forming a fluorinated two-dimensional diamond-like nanosheet film between the source and the drain to obtain a channel layer includes: providing a suspension of fluorinated two-dimensional diamond-like nanosheets; coating the suspension on the channel region between the source and the drain to form the fluorinated two-dimensional diamond-like nanosheet film in the channel region to obtain the channel layer.
[0008] In one embodiment, the step of providing a suspension of fluorinated two-dimensional diamond-like nanosheets includes: providing a single layer or a double layer of graphene oxide; reducing the single layer or the double layer of graphene oxide to obtain a single layer or a double layer of graphene; and fluorinating the single layer or the double layer of graphene to obtain a suspension of fluorinated two-dimensional diamond-like nanosheets.
[0009] In one embodiment, the step of providing a single-layer or double-layer graphene oxide comprises: adding natural graphite to a mixed solution of sodium chlorate, perchloric acid and phosphoric acid for reaction to obtain a first solution; adding potassium permanganate and perchloric acid to the first solution for reaction to obtain a second solution; and processing the second solution to obtain expanded graphite to obtain the single-layer or double-layer graphene oxide.
[0010] In one embodiment, the step of treating the second solution to obtain expanded graphite to obtain the single-layer or double-layer graphene oxide comprises: mixing the expanded graphite with sodium nitrate to obtain a first mixture; mixing the first mixture with sulfuric acid and potassium permanganate and reacting them to obtain a second mixture; adding deionized water and hydrogen peroxide to the second mixture to react, and then treating to obtain the single-layer or double-layer graphene oxide.
[0011] In one embodiment, the step of adding deionized water and hydrogen peroxide to the second mixture for reaction and then treating to obtain the single-layer or double-layer graphene oxide comprises: adding deionized water and hydrogen peroxide to the second mixture for reaction to obtain a third mixture, and centrifuging the third mixture to obtain a precipitate; adding deionized water and hydrogen peroxide to the precipitate for reaction to obtain a fourth mixture, and centrifuging the fourth mixture to obtain pure graphene oxide; mixing the pure graphene oxide with deionized water, and treating the mixed solution of the pure graphene oxide and deionized water to obtain the single-layer or double-layer graphene oxide.
[0012] In one embodiment, the step of reducing the single-layer or double-layer graphene oxide to obtain the single-layer or double-layer graphene comprises: mixing the single-layer or double-layer graphene oxide with deionized water; adding hydrazine hydrate to the mixed solution of the single-layer or double-layer graphene oxide and deionized water for reaction, and then treating to obtain the single-layer or double-layer graphene.
[0013] In one embodiment, the step of fluorinating the single-layer or double-layer graphene to obtain a suspension of the fluorinated two-dimensional diamond-like nanosheets comprises: under a first reaction condition, reacting the single-layer or double-layer graphene with xenon difluoride gas to obtain a fluorinated graphene / diamond mixture; under a second reaction condition, reacting the fluorinated graphene / diamond mixture with fluorine gas and then treating it to obtain a suspension of the fluorinated two-dimensional diamond-like nanosheets.
[0014] The present application also provides a field effect transistor, which is prepared using the above-mentioned method for preparing the field effect transistor.
[0015] The present application provides a field effect transistor and a method for preparing the same, which uses fluorinated two-dimensional diamond-like nanosheets to make a channel layer. Compared with using diamond to make a channel layer, this can reduce the difficulty of making the channel layer and make the channel layer have better electrical properties. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is a schematic flow chart of a method for preparing a field effect transistor provided in an embodiment of the present application;
[0017] Figure 2 It is a specific schematic diagram of the process of preparing a field effect transistor provided in an embodiment of the present application;
[0018] Figure 3 is an output characteristic curve diagram of the field effect transistor provided in an embodiment of the present application. DETAILED DESCRIPTION
[0019] The specific implementation methods of the present application are further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present application but are not intended to limit the scope of the present application.
[0020] Figure 1 Schematic diagram of the process of preparing a field effect transistor provided in the embodiment of the present application. Figure 1 As shown, the method for preparing the field effect transistor of the present application includes but is not limited to the following steps:
[0021] Step S10: providing a pre-prepared electrode, wherein the pre-prepared electrode includes a substrate, and a source electrode and a drain electrode disposed on a surface of the substrate;
[0022] Step S20: forming a fluorinated two-dimensional diamond-like nanosheet film between the source electrode and the drain electrode to obtain a channel layer;
[0023] Step S30: forming a dielectric layer on the channel layer;
[0024] Step S40: forming a gate electrode on the dielectric layer;
[0025] Step S50: obtaining a two-dimensional diamond-like carbon field effect transistor.
[0026] The method for preparing a field effect transistor provided in an embodiment of the present application uses fluorinated two-dimensional diamond-like nanosheets to make a channel layer. Compared with using diamond to make a channel layer, this method can reduce the difficulty of making the channel layer and make the channel layer have better electrical properties.
[0027] Optionally, silicon or silicon dioxide is selected as the substrate for the prefabricated electrode. Figure 2 As shown, silicon (Si) is selected as the substrate, and a source electrode (Source) and a drain electrode (Drain) are arranged on the surface of the substrate, wherein a channel region exists between the source electrode and the drain electrode. Optionally, the fluorinated two-dimensional diamond-like nanosheet ( Figure 2 A suspension (denoted by A in FIG. 1 ) is sprayed on the channel region between the source and the drain to form a fluorinated two-dimensional diamond-like nanosheet film in the channel region to obtain a channel layer. In addition, when the suspension of the fluorinated two-dimensional diamond-like nanosheet is sprayed on the channel region, the suspension is also sprayed on a portion of the source and the drain, so that a portion of the source and the drain is also covered by the fluorinated two-dimensional diamond-like nanosheet film. Optionally, after obtaining the channel layer, the pre-prepared electrode is placed in a physical vapor deposition device, and a 1 μm to 2 μm silicon dioxide (SiO2) oxide layer is deposited on the channel layer using a first physical mask to form a dielectric layer, and then a 50 nm to 100 nm thick titanium is deposited on the silicon dioxide oxide layer using a second physical mask to form a gate electrode (Gate), thereby obtaining a two-dimensional diamond-like field effect transistor.
[0028] In one embodiment, a prefabricated electrode is provided, comprising:
[0029] Providing a substrate, and coating a photoresist on the surface of the substrate;
[0030] The side of the substrate coated with the photoresist is patterned by electron beam exposure;
[0031] Metal is deposited on the patterned side of the substrate to obtain a prefabricated electrode.
[0032] Optionally, the substrate is first cleaned, and after cleaning, a photoresist with a thickness of 10nm to 100nm is spin-coated on the surface of the substrate at a spin-coating rate of 4500rpm to 6000rpm under photolithography conditions (yellow light room or red light room), and the substrate coated with the photoresist is baked at 100°C for 60s; then, electron beam exposure is used, and a channel length of 1nm to 100nm is reserved, and a patterning process is performed on the side of the substrate coated with the photoresist, and the patterned substrate is baked at 115°C for 80s and then transferred to a developer for development for 20s to 45s, and the developed substrate is baked at 110°C for 60s; finally, the substrate is transferred to a magnetron sputtering metal precipitation device to precipitate 10nm to 100nm of metal (such as nickel or copper), and the substrate with the precipitated metal is placed in deionized water for ultrasonication for 3min to obtain a pre-prepared electrode.
[0033] Optionally, the substrate is cleaned in the following manner: first, the substrate is ultrasonically treated in pure acetone, ethanol (or isopropanol), and deionized water for 5 minutes to 10 minutes, and then nitrogen or argon gas of appropriate pressure is used to blow dry the remaining water stains on the surface of the substrate. Finally, the substrate is plasma treated with 30 sccm oxygen for 1 minute to 2 minutes to complete the cleaning of the substrate.
[0034] In one embodiment, a fluorinated two-dimensional diamond-like nanosheet film is formed between a source electrode and a drain electrode to obtain a channel layer, comprising:
[0035] providing a suspension of fluorinated two-dimensional diamond-like nanosheets;
[0036] The suspension is coated on a channel region between a source electrode and a drain electrode to form a fluorinated two-dimensional diamond-like nanosheet film in the channel region to obtain a channel layer.
[0037] Optionally, a 0.5 mg / ml suspension of fluorinated two-dimensional diamond-like nanosheets is provided, and then the suspension of fluorinated two-dimensional diamond-like nanosheets is sprayed on the channel region between the source and the drain by spraying, so as to form a fluorinated two-dimensional diamond-like nanosheet film with a thickness of about 1 μm in the channel region to obtain a channel layer. Alternatively, a 1.5 mg / ml suspension of fluorinated two-dimensional diamond-like nanosheets is provided, and then the suspension of fluorinated two-dimensional diamond-like nanosheets is spin-coated on the channel region between the source and the drain by spin-coating, so as to form a fluorinated two-dimensional diamond-like nanosheet film with a thickness of tens of nanometers in the channel region to obtain a channel layer.
[0038] In one embodiment, a suspension of fluorinated two-dimensional diamond-like nanosheets is provided, comprising:
[0039] Providing a single layer or a double layer of graphene oxide;
[0040] Performing reduction treatment on the single-layer or double-layer graphene oxide to obtain the single-layer or double-layer graphene;
[0041] Single-layer or double-layer graphene is fluorinated to obtain a suspension of fluorinated two-dimensional diamond-like nanosheets.
[0042] In one embodiment, a single layer or double layer of graphene oxide is provided, comprising:
[0043] Adding natural graphite to a mixed solution of sodium chlorate, perchloric acid and phosphoric acid to react to obtain a first solution;
[0044] adding potassium permanganate and perchloric acid to the first solution to react to obtain a second solution;
[0045] The second solution is processed to obtain expanded graphite to obtain a single-layer or double-layer graphene oxide.
[0046] Optionally, first add 2g of large-scale natural graphite to a mixed solution of sodium chlorate: perchloric acid: phosphoric acid = 2g: 5ml: 2ml, stir evenly and react at room temperature for 1h to obtain a first solution, then add 2g of potassium permanganate and 6ml of perchloric acid to the first solution, stir evenly and react at room temperature for 1h to obtain a second solution, finally use deionized water to wash the second solution to neutrality, and dry and heat-treat the second solution washed to neutrality at a high temperature of more than 500°C to obtain expanded graphite.
[0047] In one embodiment, the second solution is processed to obtain expanded graphite to obtain a single-layer or double-layer graphene oxide, comprising:
[0048] Mixing expanded graphite with sodium nitrate to obtain a first mixture;
[0049] The first mixture is mixed with sulfuric acid and potassium permanganate and reacted to obtain a second mixture;
[0050] Deionized water and hydrogen peroxide are added to the second mixture for reaction, and then treated to obtain a single-layer or double-layer graphene oxide.
[0051] In one embodiment, after adding deionized water and hydrogen peroxide to the second mixture for reaction, a single-layer or double-layer graphene oxide is obtained by treatment, comprising:
[0052] adding deionized water and hydrogen peroxide to the second mixture for reaction to obtain a third mixture, and centrifuging the third mixture to obtain a precipitate;
[0053] adding deionized water and hydrogen peroxide to the precipitate for reaction to obtain a fourth mixture, and centrifuging the fourth mixture to obtain pure graphene oxide;
[0054] After the pure graphene oxide is mixed with deionized water, the mixed solution of the pure graphene oxide and the deionized water is treated to obtain a single layer or a double layer of graphene oxide.
[0055] Optionally, sulfuric acid is added to a first mixture obtained by mixing expanded graphite and sodium nitrate and stirred. After stirring evenly, potassium permanganate is added and stirred continuously. After stirring evenly, the temperature is increased and stirring is continued to react the expanded graphite, sodium nitrate, sulfuric acid and potassium permanganate for 1 hour to 4 hours to obtain a second mixture. Then, 500 ml of deionized water is added to the second mixture and stirred for 2 hours, and then 80 ml of 20% hydrogen peroxide is added and stirred for 1 hour to oxidize the expanded graphite to obtain a third mixture.
[0056] Optionally, the third mixture is centrifuged at 2000 rpm for 15 min, the supernatant is removed to obtain a precipitate, and then 500 ml of deionized water is added to the precipitate and stirred for 2 h to obtain a mixed solution of the precipitate and deionized water, and then 80 ml of 20% hydrogen peroxide is added to the mixed solution of the precipitate and deionized water and stirred for 1 h to oxidize the precipitate to obtain a fourth mixture, and then the fourth mixture is centrifuged at 2000 rpm for 15 min, the supernatant is removed to obtain a new precipitate, and the above oxidation and centrifugation process is repeated on the new precipitate until the obtained precipitate is pure graphene oxide.
[0057] Optionally, first, pure graphene oxide is dispersed in deionized water, and the dispersion obtained by dispersing pure graphene oxide in deionized water is ultrasonically treated for 1 hour using an ultrasonic processor with a power of 300 W to obtain a mixed product of single-layer or double-layer graphene oxide, and then the mixed product of single-layer or double-layer graphene oxide is centrifuged for 10 minutes at a rotation speed of 15 rpm to obtain a suspension of single-layer or double-layer graphene oxide, and finally the liquid of the suspension of single-layer or double-layer graphene oxide is filtered out by filter paper, and the single-layer or double-layer graphene oxide is obtained after further drying.
[0058] In one embodiment, a single layer or double layer of graphene oxide is subjected to reduction treatment to obtain a single layer or double layer of graphene, comprising:
[0059] Mixing a monolayer or bilayer of graphene oxide with deionized water;
[0060] After adding hydrazine hydrate to a mixed solution of a single-layer or double-layer graphene oxide and deionized water for reaction, the single-layer or double-layer graphene is obtained through treatment.
[0061] Optionally, a monolayer or a double-layer graphene oxide is mixed with deionized water at a ratio of 1 mg / ml, and the mixed solution of the monolayer or the double-layer graphene oxide and the deionized water is ultrasonically treated until the mixed solution of the monolayer or the double-layer graphene oxide and the deionized water is clear and free of granular matter, and then 2:1 hydrazine hydrate is added to the mixed solution of the monolayer or the double-layer graphene oxide and the deionized water after ultrasonic treatment, and the mixed solution of the monolayer or the double-layer graphene oxide, deionized water and hydrazine hydrate after ultrasonic treatment is refluxed at 100° C. for 24 hours, and then filtered, and then the filtered mixed solution is placed in an oven at 30° C. for 1 to 2 days to obtain a monolayer or a double-layer graphene.
[0062] In one embodiment, a single-layer or double-layer graphene is subjected to fluorination modification to obtain a suspension of fluorinated two-dimensional diamond-like nanosheets, comprising:
[0063] Under first reaction conditions, reacting a single layer or double layer of graphene with xenon difluoride gas to obtain a fluorinated graphene / diamond mixture;
[0064] Under the second reaction condition, the fluorinated graphene / diamond mixture is reacted with fluorine gas to obtain a suspension of fluorinated two-dimensional diamond-like nanosheets.
[0065] Optionally, a single layer or a double layer of graphene is evenly dispersed on a quartz slide, and then the quartz slide carrying the single layer or the double layer of graphene is placed in a low-temperature reactor, the temperature of the low-temperature reactor is set to 65°C, the pressure is 50 torr-60 torr, and xenon difluoride steam is continuously introduced into the low-temperature reactor for 2 hours, so that the single layer or the double layer of graphene is fully reacted with the xenon difluoride gas to obtain a fluorinated graphene / diamond mixture.
[0066] Optionally, the fluorinated graphene / diamond mixture is placed in a chemical vapor deposition device, and after fluorine gas is introduced into the chemical vapor deposition device, the chemical vapor deposition device is heated to 350° C. and maintained for 8 hours to allow the fluorinated graphene / diamond mixture to fully react with the fluorine gas to obtain fluorinated two-dimensional diamond-like nanosheets.
[0067] Furthermore, the fluorinated two-dimensional diamond-like nanosheets are added to deionized water, and the mixed solution of the fluorinated two-dimensional diamond-like nanosheets and deionized water is ultrasonically treated for 1 hour, and then the mixed solution of the fluorinated two-dimensional diamond-like nanosheets and deionized water is centrifuged at a rotation speed of 1000rpm to 2500rpm for 8min-20min, and then the particles that cannot be dispersed in the mixed solution of the fluorinated two-dimensional diamond-like nanosheets and deionized water are removed to obtain a suspension of the fluorinated two-dimensional diamond-like nanosheets.
[0068] like Figure 3As shown, the output characteristic curves of two-dimensional diamond-like field-effect transistors with different channel widths obtained by the preparation method provided in the embodiment of the present application all have the characteristics of the output characteristic curve of the field effect transistor, which proves that the preparation method provided in the embodiment of the present application can successfully prepare a two-dimensional diamond-like field-effect transistor that meets the characteristics of the field effect transistor.
[0069] The method for preparing a field effect transistor provided in an embodiment of the present application provides a suspension of fluorinated two-dimensional diamond-like nanosheets, and applies the suspension to the channel region between the source and the drain to form a fluorinated two-dimensional diamond-like nanosheet film in the channel region to obtain a channel layer. Compared with using diamond to make the channel layer, the difficulty of making the channel layer can be reduced. In addition, the fluorinated two-dimensional diamond-like nanosheets have electrical properties similar to those of diamonds, which can ensure that the channel layer has good electrical properties.
[0070] The present application also provides a field effect transistor, which is prepared using the above-mentioned method for preparing the field effect transistor.
[0071] In this document, unless otherwise specified or limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.
[0072] In this document, the terms "comprises," "comprising," or any other variations thereof, are intended to cover a non-exclusive inclusion of elements other than those listed and may also include additional elements not expressly listed.
[0073] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.
Claims
1. A method for preparing a field effect transistor, characterized in that: include: Providing a pre-prepared electrode, the pre-prepared electrode comprising a substrate, and a source electrode and a drain electrode disposed on a surface of the substrate; forming a fluorinated two-dimensional diamond-like nanosheet film between the source electrode and the drain electrode to obtain a channel layer; forming a dielectric layer on the channel layer; forming a gate electrode on the dielectric layer; A two-dimensional diamond-like carbon field-effect transistor was obtained.
2. The method according to claim 1, characterized in that The provision of a pre-prepared electrode comprises: Providing the substrate, and coating a photoresist on the surface of the substrate; Performing patterning on the side of the substrate coated with the photoresist by electron beam exposure; A metal is deposited on the side of the substrate that has been subjected to the patterning treatment to obtain the prefabricated electrode.
3. The method according to claim 1, characterized in that The step of forming a fluorinated two-dimensional diamond-like nanosheet film between the source electrode and the drain electrode to obtain a channel layer comprises: providing a suspension of fluorinated two-dimensional diamond-like nanosheets; The suspension is coated on the channel region between the source electrode and the drain electrode to form the fluorinated two-dimensional diamond-like nanosheet film in the channel region to obtain the channel layer.
4. The method according to claim 3, characterized in that The step of providing a suspension of fluorinated two-dimensional diamond-like nanosheets comprises: Providing a single layer or a double layer of graphene oxide; Performing a reduction treatment on the single-layer or double-layer graphene oxide to obtain a single-layer or double-layer graphene; The single-layer or double-layer graphene is subjected to fluorination modification to obtain a suspension of the fluorinated two-dimensional diamond-like nanosheets.
5. The method according to claim 4, characterized in that The step of providing a single layer or a double layer of graphene oxide comprises: Adding natural graphite to a mixed solution of sodium chlorate, perchloric acid and phosphoric acid to react to obtain a first solution; adding potassium permanganate and perchloric acid to the first solution to react to obtain a second solution; The second solution is treated to obtain expanded graphite, so as to obtain the single-layer or double-layer graphene oxide.
6. The method according to claim 5, characterized in that The step of treating the second solution to obtain expanded graphite to obtain the single-layer or double-layer graphene oxide comprises: Mixing the expanded graphite with sodium nitrate to obtain a first mixture; The first mixture is mixed with sulfuric acid and potassium permanganate and reacted to obtain a second mixture; Deionized water and hydrogen peroxide are added to the second mixture for reaction, and then the single-layer or double-layer graphene oxide is obtained.
7. The method according to claim 6, characterized in that The step of adding deionized water and hydrogen peroxide to the second mixture for reaction and then treating to obtain the single-layer or double-layer graphene oxide comprises: adding deionized water and hydrogen peroxide to the second mixture for reaction to obtain a third mixture, and centrifuging the third mixture to obtain a precipitate; adding deionized water and hydrogen peroxide to the precipitate for reaction to obtain a fourth mixture, and centrifuging the fourth mixture to obtain pure graphene oxide; After the pure graphene oxide is mixed with deionized water, the mixed solution of the pure graphene oxide and deionized water is treated to obtain the single-layer or double-layer graphene oxide.
8. The method according to claim 4, characterized in that The step of reducing the single-layer or double-layer graphene oxide to obtain the single-layer or double-layer graphene comprises: mixing the monolayer or bilayer graphene oxide with deionized water; After adding hydrazine hydrate to a mixed solution of the single-layer or double-layer graphene oxide and deionized water for reaction, the single-layer or double-layer graphene is obtained by treatment.
9. The method according to claim 4, characterized in that The step of fluorinating the single-layer or double-layer graphene to obtain a suspension of the fluorinated two-dimensional diamond-like nanosheets comprises: Under a first reaction condition, reacting the single-layer or double-layer graphene with xenon difluoride gas to obtain a fluorinated graphene / diamond mixture; Under the second reaction condition, the fluorinated graphene / diamond mixture is reacted with fluorine gas to obtain a suspension of the fluorinated two-dimensional diamond-like nanosheets.
10. A field effect transistor, characterized in that: The method is prepared by the method according to any one of claims 1 to 9.