Process chambers and process equipment

Abstract

This application relates to the field of process technology, and particularly to a process chamber and process equipment. The process chamber includes a cavity and a carrier plate. The cavity has a reaction chamber and a support chamber distributed along a first direction. The carrier plate is rotatably disposed within the cavity, and the rotation center of the carrier plate is parallel to the first direction. The cavity is provided with a substrate loading channel, a gas inlet channel, and a gas outlet channel. The substrate loading channel communicates with the support chamber, and the gas inlet channel and gas outlet channel communicate with the reaction chamber. The gas inlet channel and gas outlet channel are arranged opposite to each other along a second direction. The direction in which a first process gas flows through the substrate loading channel is the same as the flow direction in which a second process gas flows through the gas inlet channel. The substrate loading channel, gas inlet channel, and gas outlet channel are symmetrically distributed about a reference plane. The reference plane is parallel to the first and second directions, and the rotation center of the carrier plate is located on the reference plane. This process chamber has a more uniform process gas flow field.

Description

Technical Field

[0001] This application relates to the field of process processing technology, and in particular to a process chamber and process processing equipment. Background Technology

[0002] In process processing, the workpiece to be processed is typically placed within the chamber of the equipment and processed under specific process conditions filled with process gas. The process gas forms a flow field within the chamber, and the distribution of this flow field directly affects the processing rate and effectiveness. The better the uniformity of the process gas flow field, the higher the processing rate and the better the effect.

[0003] Current processing equipment includes a substrate loading port and a process gas inlet, as well as other ambient gas inlets. Gas entering through the ambient gas inlet enters the processing equipment's chamber and mixes with the process gas, affecting the actual flow field distribution of the process gas. Summary of the Invention

[0004] This application provides a process chamber and process processing equipment that can provide a more uniform process gas flow field for process processing.

[0005] In a first aspect, this application provides a process chamber for processing a substrate. The process chamber includes a cavity and a carrier tray. The cavity has an internal space for accommodating and processing a substrate. The carrier tray is disposed within the cavity for supporting the substrate. The cavity has a reaction chamber and a support chamber distributed along a first direction. The carrier tray is rotatably disposed within the cavity, and a first gap exists between the carrier tray and the inner wall of the cavity, allowing communication between the reaction chamber and the support chamber. The rotation center of the carrier tray is parallel to the first direction. The cavity is provided with a substrate loading channel, a gas inlet channel, and a gas outlet channel. The substrate loading channel communicates with the support chamber and is used for allowing a substrate to pass through and for introducing a first process gas into the support chamber. The substrate loading channel can be used to feed an external substrate into the cavity and to remove a substrate from the cavity. When the substrate loading channel does not need to transport a substrate, the first process gas can be introduced into the support chamber through the substrate loading channel. The first process gas in the support chamber can enter the reaction chamber through the first gap. The gas inlet channel and gas outlet channel are respectively connected to the reaction chamber, and are arranged opposite to each other along a second direction, which is perpendicular to the first direction. The gas inlet channel is used to introduce a second process gas into the reaction chamber, and the gas outlet channel is used to export the gas from the reaction chamber. The second process gas enters the reaction chamber through the gas inlet channel and exits through the gas outlet channel, with its flow direction approximately parallel to the second direction. The substrate loading channel, gas inlet channel, and gas outlet channel are symmetrically distributed about a reference plane. This reference plane is parallel to both the first and second directions, and the rotation center of the carrier disk is located on the reference plane. The airflow direction of the first process gas entering the support chamber from the substrate loading channel is the same as the airflow direction of the second process gas entering the reaction chamber from the gas inlet channel. The direction of the first process gas flowing from the substrate loading channel into the support chamber is the same as the flow direction of the second process gas flowing from the gas inlet channel into the reaction chamber, resulting in less disturbance of the second process gas in the reaction chamber by the first process gas in the support chamber, which is beneficial for maintaining better uniformity of the process gas flow field in the reaction chamber. Furthermore, the substrate loading channel, gas inlet channel, and gas outlet channel are symmetrically distributed about the reference plane, which makes the process gas flow field in the reaction chamber symmetrically distributed about the reference plane with good uniformity. When the substrate is processed in the reaction chamber, good processing effect can be achieved.

[0006] In one possible implementation, along the flow direction of the second process gas, the gas introduction channel includes an inlet section and a premixing section connected sequentially. The inlet section includes multiple gas channels distributed along a third direction, which is perpendicular to the reference plane. These multiple gas channels allow the second process gas to form a flow distribution perpendicular to the first direction and parallel to the second direction, facilitating the formation of a uniform process gas flow field within the reaction chamber. The premixing section is equipped with multiple baffles distributed along a third direction, dividing the premixing section into multiple premixing channels, each premixing channel connecting to one or more gas channels. The premixing section can perform preliminary mixing of the second process gas introduced through the corresponding gas channels to improve the uniformity of the second process gas.

[0007] Possibly, the gas introduction channel also includes a mixing section, which connects the reaction chamber and the premixing section, and connects all the premixing channels. The mixing section can mix the second process gas in all the premixing channels, making the second process gas entering the reaction chamber more uniform.

[0008] The mixing section can have a first port for connecting to the reaction chamber and a second port for connecting to the premixing section, with the first port being larger than the second port. This structure allows the mixing section to reduce gas flow convergence, which helps improve the uniformity of the second process gas entering the reaction chamber.

[0009] In one possible implementation, the gas inlet channel is divided into multiple flow channel regions along a third direction, with each flow channel region corresponding to one or more premixing sections. The multiple flow channel regions are symmetrically distributed about a reference plane, and two flow channel regions symmetrically distributed about the reference plane have the same number of gas channels. Different flow channel regions correspond to different areas within the reaction chamber. By differentially controlling the gas flow rate in different flow channel regions, the gas distribution within different areas of the reaction chamber can be adjusted to meet the requirements of the process.

[0010] Specifically, when controlling the flow of the second process gas into the inlet channel, gas channels within the same flow area can have the same gas flow rate. Two flow area regions symmetrically distributed about the reference plane have the same gas flow rate. Therefore, the amount of gas introduced into the entire gas inlet channel is symmetrically distributed about the reference plane.

[0011] It is possible that there are 2-6 gas channels in each flow channel region.

[0012] In one possible implementation, the cavity further includes a heating ring surrounding the carrier disk. The heating ring has a slit extending through it along a first direction. The slit is inclined at an angle to a second direction, and the inclination direction of the slit relative to the second direction is opposite to the rotation direction of the carrier disk. The slit's design can offset some of the process gas flow field shift caused by the carrier disk rotating with the substrate, thus helping to maintain the uniformity of the process gas flow field within the reaction chamber.

[0013] The angle between the heating ring slit and the second direction can be 20°-60°.

[0014] In one possible implementation, the chamber includes an upper cover, a lower cover, and a middle frame connecting the upper and lower covers. The middle frame includes an annular outer frame and an annular inner liner disposed within the annular outer frame. The middle frame is annular, and the annular inner liner is also annular, attached to the inner wall of the middle frame. The upper cover, lower cover, and annular inner liner enclose the internal space of the chamber. A second gap exists between the annular outer frame and the annular inner liner, and the second gap communicates with the internal space of the chamber. The annular outer frame is provided with at least one set of slit structures, each set of slit structures including two gas slit channels. Along a third direction, the two gas slit channels in the same set of slit structures are located on opposite sides of a reference plane, and each gas slit channel communicates with the second gap to introduce a third process gas into the second gap. Two slit gas channels are respectively set on both sides of the reference plane along the third direction. This can prevent the gas introduced into the slit gas channel on one side from generating a pressure difference that would affect the flow field distribution of the process gas in the reaction chamber. This ensures that the third process gas introduced into the second gap will not cause significant disturbance to the flow field of the process gas in the reaction chamber.

[0015] It is possible that two gas slit channels in the same set of slit structures can be symmetrically distributed about the reference plane.

[0016] Secondly, this application provides a process processing apparatus, which includes an inlet unit, an outlet unit, and the aforementioned process chamber. The inlet unit includes a first inlet group and a second inlet group. The first inlet group is connected to a substrate loading channel, and can introduce a first process gas into a support cavity through the substrate loading channel. The second inlet group is connected to a gas inlet channel, and can introduce a second process gas into a reaction chamber through the gas inlet channel. The outlet unit is connected to a gas outlet channel, and can export the gas from the reaction chamber through the gas outlet channel. The process chamber in this process processing apparatus has a more uniform process gas flow field, providing a better processing environment for the process and thus achieving better process processing results.

[0017] Thirdly, this application provides a gas introduction structure with a gas introduction channel, which can be applied to application scenarios such as process chambers that require the introduction of process gases. The gas introduction channel formed by this structure includes an introduction section and a premixing section connected sequentially. The introduction section includes multiple gas channels distributed along a third direction, which is perpendicular to the airflow direction. These multiple gas channels allow the process gas to form a planar flow distribution composed of the third direction and the airflow direction, with the airflow direction defined as the second direction. This process gas distribution ensures that the process gas entering the reaction chamber forms a uniform process gas flow field. The premixing section is provided with multiple baffles distributed along a third direction, which divide the premixing section into multiple premixing channels, each premixing channel connecting to one or more gas channels. The premixing section can perform preliminary mixing of the process gas introduced through the corresponding gas channel, thereby improving the uniformity of the process gas.

[0018] Possibly, the gas introduction channel also includes a mixing section, which connects the reaction chamber and the premixing section, and connects all the premixing channels. When this gas introduction structure is applied to introduce process gas into the reaction chamber of the process chamber, the mixing section is connected to the reaction chamber. The mixing section can mix the process gas in all the premixing channels, making the process gas entering the reaction chamber more uniform. The mixing section has a first port and a second port, the second port being used to connect to the premixing section, and the size of the first port is larger than the size of the second port. This structure allows the mixing section to reduce gas flow convergence, which helps to improve the uniformity of the process gas entering the reaction chamber.

[0019] In one possible implementation, along a third direction, the gas inlet channel is divided into multiple flow channel regions, each corresponding to one or more premixing sections. These multiple flow channel regions are symmetrically distributed, with the reference plane for their symmetry parallel to both the second and first directions. Two flow channel regions symmetrically distributed about the reference plane have the same number of gas channels. Different flow channel regions correspond to different areas within the reaction chamber. By differentially controlling the gas flow rate within different flow channel regions, the gas distribution within different areas of the reaction chamber can be adjusted to meet the requirements of the process.

[0020] In this system, when controlling the flow of the second process gas into the inlet channel, the gas channels within the same flow channel region have the same gas flow rate. Two flow channel regions symmetrically distributed about the reference plane have the same gas flow rate. Therefore, the amount of gas introduced into the entire gas inlet channel is symmetrically distributed about the reference plane. Possibly, the number of gas channels in each flow channel region is 2-6. Attached Figure Description

[0021] Figure 1aThis is a schematic diagram of the structure of a process chamber provided in an embodiment of this application;

[0022] Figure 1b for Figure 1a A schematic diagram of the process chamber from another perspective;

[0023] Figure 1c This is a schematic diagram of the structure of an annular outer frame in a process chamber provided in an embodiment of this application;

[0024] Figure 1d for Figure 1d A structural schematic diagram of the annular outer frame from another perspective;

[0025] Figure 1e This is a schematic diagram of the structure of an annular liner in a process chamber provided in an embodiment of this application;

[0026] Figure 1f for Figure 1e A structural schematic diagram of the annular liner from another perspective;

[0027] Figure 1g This is a partial structural diagram of a process chamber provided in an embodiment of this application;

[0028] Figure 1h for Figure 1g A partial structural schematic diagram of the process chamber from another perspective;

[0029] Figure 2a This is a schematic diagram of another process chamber structure provided in an embodiment of this application;

[0030] Figure 2b for Figure 2a A schematic diagram of the cross-sectional structure of the process chamber in the middle;

[0031] Figure 2c for Figure 2b Enlarged schematic diagram of part B in the diagram;

[0032] Figure 3 A schematic diagram of airflow in a process chamber provided in an embodiment of this application;

[0033] Figure 4a This is a partial structural schematic diagram of another process chamber provided in an embodiment of this application;

[0034] Figure 4b for Figure 4a A partial structural schematic diagram of the process chamber from another perspective;

[0035] Figure 5 This is a schematic diagram of a gas introduction structure in a process chamber provided in an embodiment of this application;

[0036] Figure 6a This is a schematic diagram of a gas introduction structure in a process chamber provided in an embodiment of this application;

[0037] Figure 6b This is a schematic diagram of a gas introduction structure in a process chamber provided in an embodiment of this application;

[0038] Figure 7 A cross-sectional structural schematic diagram of another process chamber provided in an embodiment of this application;

[0039] Figure 8a for Figure 7 A schematic diagram of the cross-sectional structure at position C1-C1;

[0040] Figure 8b for Figure 8a Enlarged view of D;

[0041] Figure 8c for Figure 7 A schematic diagram of the cross-sectional structure at position C1-C1;

[0042] Figure 9 for Figure 7 A schematic diagram of the cross-sectional structure at position C2-C2;

[0043] Figure 10 for Figure 7 A schematic diagram of the cross-sectional structure at position C3-C3;

[0044] Figure 11 for Figure 7 A schematic diagram of the cross-sectional structure at position C4-C4;

[0045] Figure 12a A schematic diagram of the airflow space of a process chamber provided in an embodiment of this application;

[0046] Figure 12b for Figure 12a A schematic diagram of the airflow space of the process chamber from another perspective;

[0047] Figure 13 A schematic diagram simulating the flow field of process gas inside a process chamber, provided for an embodiment of this application;

[0048] Figure 14a This is a schematic diagram of another process chamber structure provided in an embodiment of this application;

[0049] Figure 14b This is a schematic diagram of another process chamber structure provided in an embodiment of this application;

[0050] Figure 14c A cross-sectional structural schematic diagram of another process chamber provided in an embodiment of this application;

[0051] Figure 15 This is a schematic diagram of a process equipment provided in an embodiment of this application.

[0052] Explanation of reference numerals in the attached figures:

[0053] 1-Cavity;

[0054] 10-Process chamber; 11-Substrate loading channel; 12-Gas inlet channel; 13-Gas outlet channel; 14-First slit gas channel; 15-Second slit gas channel; 16-Inlet channel;

[0055] 1-1-Upper cavity cover; 1-2-Lower cavity cover; 1-3-Middle frame; 1-4-Exhaust structure component;

[0056] 121 - Inlet Section; 122 - Premixing Section; 123 - Mixing Section; 131 - Collection Section; 132 - Guiding Section; 133 - Confluence Section;

[0057] 1-21-Support section; 1-31-Annular outer frame; 1-32-Annular inner liner; 1-33-Baseboard loading structure; 1-34-Inlet structure; 1-35-Outlet structure; 1-41-Exhaust chamber;

[0058] 1211 - Gas flow channel; 1221 - Baffle; 1222 - Premixing channel;

[0059] 2-Carrier disk;

[0060] 20 - Intake unit;

[0061] 201 - First air intake group; 202 - Second air intake group;

[0062] 3-Heating ring;

[0063] 30 - Exhaust unit;

[0064] A1 - Reaction chamber; A2 - Support chamber; D1 - Direction; D2 - Direction; F - Second gap; S1 - First air inlet; S2 - Second air inlet; S3 - Third air inlet; S4 - Fourth air inlet; T - Air outlet; U0 - Central flow channel region; U1 - First side flow channel region; U2 - Second side flow channel region; V - Reference plane; W1 - Dimension of the first port; W2 - Dimension of the second port; X - Second direction; Y - Third direction; Z - First direction. Detailed Implementation

[0065] In process control, the gas flow field distribution within a chamber is closely related to the process outcome. The ambient gas inlet disturbs the process gas flow field, affecting its uniformity. The process gas flow typically enters the upper chamber laterally, merging with all other gas flows. When the ambient gas inlet and process gas inlet are positioned at an angle, it impacts the airflow, making it difficult to maintain uniformity on both sides of the process gas flow field, increasing uncertainty and design complexity. While the influence of ambient gas may be negligible in traditional processes, its flow field disturbances become significant in advanced processes.

[0066] Based on this, embodiments of this application provide a process chamber and process processing equipment that can provide a uniform process gas flow field, thereby reducing the impact on process processing.

[0067] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “an,” “the,” “the,” “the,” and “this” are intended to also include expressions such as “one or more” unless the context clearly indicates otherwise.

[0068] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0069] like Figure 1a and Figure 1bThe illustrated processing apparatus includes a process chamber 10, which can be used as a processing chamber, for example, for processing a substrate. The process chamber 10 includes an upper cover 1-1, a lower cover 1-2, a middle frame 1-3, and an exhaust structure 1-4. The upper cover 1-1 and the lower cover 1-2 are disposed along a first direction Z. The middle frame 1-3 is disposed between the upper cover 1-1 and the lower cover 1-2. The inner wall of the middle frame 1-3, together with the inner walls of the upper cover 1-1 and the lower cover 1-2, defines the internal space of the process chamber 10, which can accommodate the substrate and perform processing on it. The middle frame 1-3 is provided with a substrate loading port R, a first air inlet S1, a second air inlet S2, a third air inlet S3, and a fourth air inlet S4, which communicate with the internal space of the process chamber 10. The exhaust structure 1-4 is provided with an exhaust port T, which is also connected to the internal space of the process chamber 10. The lower chamber cover 1-2 has a tubular support portion 1-21 through which an external rotation shaft can extend into the process chamber 10, supporting the substrate's rotation during the process. The support portion 1-21 has an axis Q, and when the external rotation shaft extends into the process chamber, its axis is collinear with axis Q. Based on the state of the process chamber 10 in application, axis Q is parallel to the vertical direction. Combining axis Q and the structure of the process chamber 10, a second perpendicular direction X, a third perpendicular direction Y, and a first direction Z are defined, forming a reference coordinate system. Axis Q is parallel to the first direction Z.

[0070] The middle frame 1-3 specifically includes, for example: Figure 1c and Figure 1d The annular outer frame 1-31 shown and Figure 1e and Figure 1f The annular inner liner 1-32 is shown. The annular inner liner 1-32 is circular and is disposed inside the annular outer frame 1-31. The space between the annular inner liner 1-32 and its inner wall, and the inner walls of the upper cavity cover 1-1 and lower cavity cover 1-2, constitutes the internal space of the aforementioned process chamber 10. Further reference... Figure 1g and Figure 1h The middle frame 1-3 also includes a substrate loading structure 1-33, an air intake structure 1-34, and an air outlet structure 1-35 mounted on the annular inner liner 1-32.

[0071] Refer to together Figures 1a to 1hIn this embodiment, the process chamber 10 is provided with a substrate loading channel 11, a gas inlet channel 12, a gas outlet channel 13, a first slit gas channel 14, and a second slit gas channel 15. All three channels communicate with the internal space of the process chamber 10. Along the second direction X, the gas inlet channel 12 and the gas outlet channel 13 are arranged opposite to each other. The substrate loading channel 11 is located on the same side as the gas inlet channel 12, and is located on the bottom side of the gas inlet channel 12 along the first direction Z. Specifically, the substrate loading structure 1-33 forms the substrate loading channel 11 with the annular outer frame 1-31 and the annular inner liner 1-32; the gas inlet structure 1-34 forms the gas inlet channel 12 with the annular outer frame 1-31 and the annular inner liner 1-32; and the gas outlet structure 1-35 forms the gas outlet channel 13 with the annular outer frame 1-31 and the annular inner liner 1-32. There is a structural gap between the annular outer frame 1-31 and the annular inner liner 1-32. The first slit gas channel 14 and the second slit gas channel 15 are both located on the annular outer frame 1-31. The third air inlet S3 is connected to the structural gap between the annular outer frame 1-31 and the annular inner liner 1-32 through the first slit gas channel 14. The fourth air inlet S4 is connected to the structural gap between the annular outer frame 1-31 and the annular inner liner 1-32 through the second slit gas channel 15.

[0072] Reference Figure 2a As shown, by cutting the process chamber 10 along the reference plane V, the following can be obtained: Figure 2b The diagram shows a cross-sectional structure. Here, the reference plane V is parallel to the second direction X and the first direction Z, and passes through the axis Q; that is, the axis Q is located on the reference plane V. The upper chamber cover 1-1, lower chamber cover 1-2, middle frame 1-3, and exhaust structure 1-4 of the process chamber 10 are symmetrically distributed about the reference plane V. The substrate loading port R, the first air inlet S1, and the second air inlet S2 are all symmetrically distributed about the reference plane V, while the air outlet T is located on the reference plane V. The third air inlet S3 and the fourth air inlet S4 are generally arranged in pairs. For example, the process chamber 10 has two third air inlets S3. These two third air inlets S3 can be approximately symmetrically distributed about the reference plane V, but are not required to be symmetrically distributed.

[0073] like Figure 2b As shown, a carrier disk 2 is disposed within a cavity 1. The internal space of the cavity 1 can accommodate a substrate, and the substrate is processed within the cavity 1. The carrier disk 2 is used to support the substrate. Here, the substrate can refer to a wafer. During operation, the carrier disk 2 can be supported by an external rotation axis and rotate around axis Q, with the centerline of the carrier disk 2 coinciding with axis Q. The carrier disk 2 can move vertically and vertically along a first direction Z during application. When the carrier disk 2 is in a certain position... Figure 2bAs shown, the carrier disk 2 divides the internal space of the cavity 1 into a reaction chamber A1 and a support chamber A2, which are distributed along the first direction Z. It can be considered that the carrier disk 2 defines the reaction chamber A1 and the support chamber A2 of the cavity 1.

[0074] Combination Figure 2c shown Figure 2a In the enlarged view of section B, a first gap H exists between the annular liner 1-32 and the carrier disk 2, facilitating the rotation of the carrier disk 2 around axis Q. This first gap H connects the reaction chamber A1 and the support chamber A2. Since the carrier disk 2 is generally circular, this first gap H is an annular slit surrounding the carrier disk 2. A heating ring 3 for heating the substrate is provided on the inner wall of the annular liner 1-32. The heating ring 3 surrounds the inner wall of the cavity 1, and at least partially lies within the first gap H without contacting the carrier disk 2.

[0075] Please continue to refer to Figure 2b The substrate loading channel 11 of the process chamber 10 is formed by connecting the substrate loading structure 1-33 with the annular outer frame 1-31 and the annular inner liner 1-32. The gas inlet channel 12 is formed by connecting the gas inlet structure 1-34 with the annular outer frame 1-31 and the annular inner liner 1-32. The gas outlet channel 13 is formed by connecting the gas outlet structure 1-35 with the annular outer frame 1-31 and the annular inner liner 1-32. The substrate loading channel 11 is connected to the support cavity A2, the gas inlet channel 12 is connected to the reaction cavity A1, and the gas outlet channel 13 is connected to the reaction cavity A1. The exhaust structure 1-4 has an exhaust cavity 1-41, and an outlet T is disposed on the exhaust structure 1-4, which is connected to the gas outlet channel 13 through the exhaust cavity 1-41.

[0076] like Figure 2b As shown, the substrate loading port R, the first air inlet S1, and the substrate loading channel 11 are connected. The substrate loading channel 11 is a channel through which the substrate can pass, used for the substrate to enter or exit. During substrate loading, the substrate can enter the substrate loading channel 11 through the substrate loading port R and be sent into the support cavity A2 of the cavity 1, or the substrate on the carrier 2 can be moved out of the substrate loading port R after passing through the substrate loading channel 11. The substrate located on the carrier 2 is placed in the reaction cavity A1 by moving the carrier 2 along the first direction Z. Figure 1c , Figure 1h and Figure 2bAs shown, to facilitate the substrate's passage through the substrate loading channel 11, the substrate loading channel 11 is flat and approximately parallel to the second direction X and the third direction Y, with its length parallel to the second direction X. It should be understood that when the substrate enters or exits the support cavity A2 of the cavity 1, the carrier tray 2 needs to move to the plane of the substrate loading channel 11 to facilitate the transfer of the substrate from the substrate loading channel 11 to the carrier tray 2 or vice versa. After the substrate enters the cavity 1 from the substrate loading channel 11 and is placed on the carrier tray 2, the carrier tray 2 moves to... Figure 2a The location is shown. When loading or removing the substrate is not required, a first process gas can be introduced into the substrate loading channel 11 through the first air inlet S1. The first process gas enters the support cavity A2 and provides support for the carrier 2. The first process gas can also enter the reaction cavity A1 through the first gap H between the heating ring 3 and the carrier 2, which helps to maintain stable gas pressure in the reaction cavity A1. The connection between the first air inlet S1 and the substrate loading channel 11 is located on the side wall of the substrate loading channel 11.

[0077] like Figure 2b As shown, the second air inlet S2 is connected to the gas introduction channel 12. The gas introduction channel 12 is connected to the reaction chamber A1, and a second process gas can be introduced into the reaction chamber A1 through the gas introduction channel 12. The substrate on the carrier 2 can be processed in the environment of the second process gas. The gas in the reaction chamber A1 can be discharged to the outside of the chamber 1 through the gas outlet channel 13. Figure 1b , Figure 1d and Figure 2b It can be seen that there are multiple second air inlets S2, and each second air inlet S2 is connected to the gas introduction channel 12. The second air inlets S2 are symmetrically distributed along the third direction Y about the reference plane V.

[0078] like Figure 2b As shown, the exhaust port T of the exhaust structure 1-4 is connected to the gas outlet channel 13. The gas outlet channel 13 is connected to the reaction chamber A1 and can exhaust the gas in the reaction chamber A1. The reaction chamber A1 mainly contains the second process gas, but also contains some first process gas. Therefore, the gas exhausted by the gas outlet channel 13 contains both the first process gas and the second process gas.

[0079] Refer again Figure 2bAs shown, the substrate loading channel 11 and the gas inlet channel 12 are located on the same side of the cavity 1. Along the second direction X, the substrate loading channel 11 and the gas inlet channel 12 are located on the right side of the cavity 1, and the gas outlet channel 13 is located on the left side of the cavity 1. The gas inlet channel 12 and the gas outlet channel 13 are opposite each other along the second direction X. The airflow direction of the first process gas from the substrate loading channel 11 into the support cavity A2 is the same as the airflow direction of the second process gas from the gas inlet channel 12 into the reaction cavity A1. In operation, the process chamber 10 provided in this embodiment forms a process gas flow field in the reaction cavity A1 that is approximately along the gas inlet channel 12 and points to the gas outlet channel 13. The uniformity of this process gas flow field will affect the substrate processing. It should be understood that the first process gas in the support cavity A2 can support the second process gas in the reaction cavity A1 through the first gap H between the heating ring 3 and the cavity 1, preventing the second process gas in the reaction cavity A1 from entering the support cavity A2. Thus, the second process gas in the reaction cavity A1 flows approximately parallel to the second direction X and maintains a relatively stable flow state. In other words, the introduction of the first process gas can maintain the gas pressure state of the second process gas in the reaction cavity A1, ensuring the normal operation of the process.

[0080] like Figure 3 As illustrated, the flow path of the first process gas from the substrate loading channel 11 into the support cavity A2 can be referred to as the solid arrow, and the flow path of the second process gas from the gas inlet channel 12 into the reaction cavity A1 and out through the gas outlet channel 13 can be referred to as the dashed arrow. Combined with... Figure 2a and Figure 3 It can be seen that the airflow direction of the second process gas entering the reaction chamber A1 from the gas inlet channel 12 is the same as the airflow direction of the first process gas entering the support chamber A2 from the substrate loading channel 11. The macroscopic direction of the first process gas and the macroscopic direction of the second process gas are basically along the direction from the gas inlet channel 12 to the gas outlet channel 13. Therefore, when the first process gas in the support chamber A2 enters the reaction chamber A1, the disturbance caused by the first process gas to the process gas flow field formed by the second process gas in the reaction chamber A1 is small. This can minimize the impact of the first process gas on the uniformity of the process gas flow field in the reaction chamber A1, which is beneficial to the implementation of the process and keeps the deposited layer on the substrate uniform.

[0081] Combination Figure 2b Reference Figure 4aAs shown, along the flow direction of the second process gas, the gas inlet channel 12 specifically includes an inlet section 121, a premixing section 122, and a mixing section 123 connected in sequence. The inlet section 121 is formed by the inlet structure 1-34, and the second inlet S2 is connected to the inlet section 121 via an inclined inlet channel 16 on the annular outer frame 1-31. Both the premixing section 122 and the mixing section 123 are formed on the annular liner 1-32. The second process gas can enter the inlet section 121 from the second inlet S2 via the inlet channel 16. The inlet section 121 extends exemplarily along the second direction X. The mixing section 123 is connected to the reaction chamber A1, and the premixing section 122 is connected between the inlet section 121 and the mixing section 123. Figure 4a It can be seen that the mixing section 123 is funnel-shaped along the flow direction of the second process gas. Specifically, along the direction from the gas inlet channel 12 to the reaction chamber A1, with a plane perpendicular to the second direction X as a reference, the cross-sectional area of ​​the mixing section 123 gradually increases. For example, the premixing section 122 extends upward along the first direction Z, and the airflow direction within the premixing section 122 is almost perpendicular to the airflow direction within the inlet section 121. Combined with... Figure 2b Reference Figure 4b As shown, the gas flows out of the reaction chamber A1 via the gas outlet channel 13, which includes a collection section 131, a guide section 132, and a confluence section 133. The collection section 131 and guide section 132 are both formed on the annular liner 1-32, and the confluence section 133 is formed on the gas outlet structure 1-35. The gas in the reaction chamber A1 can pass through the collection section 131, guide section 132, and confluence section 133 in sequence and then be discharged through the gas outlet T on the exhaust structure 1-4. Figure 4b As can be seen, the collecting section 131 is flared to the left and right along the gas discharge direction within the reaction chamber A1. Specifically, along the direction from the reaction chamber A1 towards the gas outlet channel 13, with a plane perpendicular to the second direction X as a reference, the cross-sectional area of ​​the mixing section 123 gradually decreases. For example, the guiding section 132 extends downward along the first direction Z, while the confluence section 133 extends along the second direction X. The airflow direction within the guiding section 132 is almost perpendicular to the airflow direction within the confluence section 133. The outlet channel on the second structural component has a portion parallel to the second direction X and a portion parallel to the first direction Z. The discharged process gas continuously moves along the plane containing the reference plane V, ensuring that the discharged gas does not affect the gas flow within the reaction chamber A1, which generally flows along the second direction X, maintaining a relatively stable process gas flow field. Figure 5The illustrated simplified structure of the gas inlet channel 12 shows that the inlet section 121, premixing section 122, and mixing section 123 are arranged sequentially from right to left along the second direction X. The inlet section 121 includes multiple gas channels 1211 distributed along the third direction Y, each extending along the second direction X, and the multiple gas channels 1211 are symmetrically distributed about the reference plane V. Here, 20 gas channels 1211 are exemplarily shown. Specifically, the multiple gas channels 1211 are formed by multiple air intake structures 1-34 installed on the annular liner 1-32, and the air intake structures 1-34 are tubular.

[0082] Continue to refer to Figure 5 The premixing section 122 is provided with multiple baffles 1221 distributed along the third direction Y, which divide the premixing section 122 into multiple premixing channels 1222. Each premixing channel 1222 connects to one or more gas channels 1211. Here, an example is shown where one premixing channel 1222 connects to two adjacent gas channels 1211, meaning that the second process gas in the two gas channels 1211 will enter the same premixing channel 1222 for mixing. The multiple premixing channels 1222 are symmetrically distributed about the reference plane V.

[0083] For multiple gas channels 1211 and multiple premixing channels 1222, each premixing channel 1222 can correspond to the same number of gas channels 1211. When the amount of gas introduced into each gas channel 1211 is the same, it can be ensured that the amount of gas in each premixing channel 1222 is the same.

[0084] Possibly, some of the premixing channels 1222 correspond to m gas channels 1211, and others correspond to n gas channels 1211, where m and n are both integers greater than or equal to 1, and m is not equal to n. When the amount of gas introduced into each gas channel 1211 is the same, the amount of gas in the premixing channel 1222 corresponding to the m gas channels 1211 is different from the amount of gas in the premixing channel 1222 corresponding to the n gas channels 1211.

[0085] The mixing section 123 is an unobstructed chamber connected between the reaction chamber A1 and the premixing section 122. Furthermore, the mixing section 123 is connected to all the premixing channels 1222, meaning that the second process gas in each premixing channel 1222 will enter the mixing section 123 and be mixed. The mixed second process gas in the mixing section 123 then enters the reaction chamber A1. The mixing section 123 is symmetrically distributed about the reference plane V. Figure 2b and Figure 5As shown, the mixing section 123 has a first port for connecting to the reaction chamber A1 and a second port for connecting to the premixing section 122. Along the third direction Y, the first port has a size of W1, and the second port has a size of W2, where W1 is larger than W2. This structural arrangement allows the second process gas in the mixing section 123 to first diffuse and then enter the reaction chamber A1 in an "expanded" state, reducing the gas flow convergence effect and improving the uniformity of the second process gas entering the reaction chamber A1.

[0086] Please refer to the above. Figure 2b and Figure 5 The gas introduction channel 12 provided in this embodiment, including the introduction section 121, premixing section 122, and mixing section 123, can gradually and regularly mix the second process gas entering the reaction chamber A1, allowing the second process gas to enter the reaction chamber A1 in a more uniform manner and forming a process gas flow field approximately parallel to the second direction X within the reaction chamber A1. This process gas flow field can exhibit a relatively uniform distribution within the reaction chamber A1, which is beneficial for improving the uniformity of process processing within the reaction chamber A1.

[0087] To facilitate air intake control, the gas inlet channel 12 in this embodiment can be divided into multiple flow channel regions along the third direction Y. Taking the inlet section 121 of the gas inlet channel 12, which includes 20 gas flow channels 1211, as an example, the multiple flow channel regions of the gas inlet channel 12 will be illustrated.

[0088] like Figure 6aAs shown, along the third direction Y, the gas inlet channel 12 is exemplary divided into five flow channel regions: a central flow channel region U0, two first side flow channel regions U1, and two second side flow channel regions U2. Each of the central flow channel region U0, the two first side flow channel regions U1, and the two second side flow channel regions U2 contains the same number of gas channels 1211, for example, four. Specifically, the central flow channel region U0 is located at the center of the gas inlet channel 12 along the third direction Y. The two first side flow channel regions U1 are located on opposite sides of the central flow channel region U0 along the third direction Y, and are symmetrically distributed about the reference plane V. Along the third direction Y, one of the second side flow channel regions U2 is located on the side of one of the first side flow channel regions U1 away from the central flow channel region U0, and the other second side flow channel region U2 is located on the side of the other first side flow channel region U1 away from the central flow channel region U0, and are symmetrically distributed about the reference plane V. During operation, the amount of gas introduced into each gas channel 1211 in the central flow channel region U0 is the same, the amount of gas introduced into each gas channel 1211 in the first side flow channel region U1 is the same, and the amount of gas introduced into each gas channel 1211 in the second side flow channel region U2 is the same. The amount of gas introduced into the entire gas inlet channel 12 is symmetrically distributed about the reference plane V.

[0089] like Figure 6b As shown, along the third direction Y, the gas inlet channel 12 is exemplarily divided into six flow channel regions: two central flow channel regions U0, two first side flow channel regions U1, and two second side flow channel regions U2. Specifically, the two central flow channel regions U0 are located at the center of the gas inlet channel 12 along the third direction Y, and the two central flow channel regions U0 are adjacent and symmetrically distributed about the reference plane V. Along the third direction Y, the two first side flow channel regions U1 are located on both sides of the two central flow channel regions U0, and the two first side flow channel regions U1 are symmetrically distributed about the reference plane V. Along the third direction Y, one of the second side flow channel regions U2 is located on the side of one of the first side flow channel regions U1 away from the central flow channel region U0, and the other second side flow channel region U2 is located on the side of the other first side flow channel region U1 away from the central flow channel region U0, and the two second side flow channel regions U2 are symmetrically distributed about the reference plane V. Among them, each of the two central flow channel regions U0 corresponds to three gas flow channels 1211 and one premixing channel 1222. In the two first side channel regions U1, each first side channel region U1 corresponds to three gas channels 1211 and one premixing channel 1222. In the two second side channel regions U2, each second side channel region U2 corresponds to four gas channels 1211 and two premixing channels 1222, and each premixing channel 1222 corresponds to two gas channels 1211.

[0090] During operation, the amount of gas introduced into each gas channel 1211 in the central flow channel region U0 is the same, the amount of gas introduced into each gas channel 1211 in the first side flow channel region U1 is the same, and the amount of gas introduced into each gas channel 1211 in the second side flow channel region U2 is the same. The amount of gas introduced into the entire gas inlet channel 12 is symmetrically distributed about the reference plane V. Different flow channel regions correspond to different regions within the reaction chamber A1. By differentially controlling the gas flow rate of the gas channels 1211 in different flow channel regions, the gas distribution in different regions within the reaction chamber A1 can be adjusted to meet the requirements of the process.

[0091] Combination Figure 6a and Figure 6b As shown, in the gas inlet channel 12 of this embodiment, the number of flow channel regions is not limited, nor is it limited to an odd or even number, as long as the flow channel regions are symmetrically distributed about the reference plane V. The number of gas channels 1211 in each flow channel region is also not limited; the number of gas channels 1211 in different flow channel regions can be the same or different, as long as the number of gas channels 1211 in two flow channel regions that are symmetrically distributed about the reference plane V is the same. For example, the number of gas channels 1211 in each flow channel region can be 2-6.

[0092] Figure 7 For process chamber 10 along Figure 2a The sectional view shown is obtained after cutting along the reference plane V. Figure 8a for Figure 7 A cross-sectional view of the intermediate process chamber 10 in the plane C1-C1, where the plane C1-C1 passes through the inlet section 121 of the gas inlet channel 12. (See image below.) Figure 8a As shown, the inlet section 121 includes multiple gas flow channels 1211 distributed along a third direction Y, each gas flow channel 1211 extending along a second direction X. Further reference... Figure 8b shown Figure 8a An enlarged view of section D shows that the hollow inner cavity of the air intake structure 1-34 forms a gas flow channel 1211. The air intake structure 1-34 extends along the second direction X, and multiple air intake structures 1-34 are arranged sequentially along the third direction Y. (For reference only.) Figure 8a and Figure 8b As shown, multiple air intake structures 1-34 are symmetrically distributed about the reference plane V. Figure 8a The diagram also shows a guide section 132 of the gas outlet channel 13. The guide section 132 is formed on the annular liner 1-32 and communicates with the reaction chamber A1 via a collection section 131. Possibly, as... Figure 8cAs shown, the guide segment 132 is provided with multiple baffles 1321, which are distributed along the third direction Y and symmetrically distributed about the reference plane V. The multiple baffles 1321 divide the guide segment 132 along the third direction Y into multiple outlet channels 1322. Combined with... Figure 2b and Figure 8c As shown, the gas in the reaction chamber A1 can be discharged in multiple ways through multiple outlet channels 1322 after passing through the collection section 131. The baffle 1321 can guide the gas discharged from the reaction chamber A1.

[0093] Combination Figure 1b and Figure 8c As can be seen, the plane containing C1-C1 also passes through the third air inlet S3 and the first slit gas channel 14. There are two third air inlets S3, each connected to the second gap F between the annular outer frame 1-31 and the annular inner liner 1-32 via a first slit gas channel 14. The annular inner liner 1-32 has a gap connecting the second gap F to the reaction chamber A1. The third air inlets S3 can introduce a third process gas into the second gap F between the annular outer frame 1-31 and the annular inner liner 1-32 through the first slit gas channel 14 to maintain the stability of the process gas flow field within the reaction chamber A1. The two third air inlets S3 and the two first slit gas channels 14 can be symmetrically distributed about the reference plane V. The third air inlets S3 and the first slit gas channels 14 are arranged in pairs to prevent a pressure difference from being generated by introducing the third process gas through a single slit gas channel, which would affect the process gas flow field distribution within the reaction chamber A1. Of course, since the height of the slit gas channel has little impact on the process gas flow field in the reaction chamber A1, the two sets of third air inlets S3 and the first slit gas channel 14 can be symmetrically distributed about the reference plane V, or they can be asymmetrical or approximately symmetrical.

[0094] Combination Figure 7 , Figure 9 for Figure 7 The cross-sectional view of the intermediate process chamber 10 in the plane C2-C2 passes through the confluence section 133 of the substrate loading channel 11 and the gas outlet channel 13. The substrate loading channel 11 is formed by the substrate loading structure 1-33 and the annular liner 1-32. The gas outlet channel 13 shows the guide section 132 and the confluence section 133; the guide section 132 does not have a baffle 1321. The confluence section 133 is divided into two confluence regions P along the third direction Y, and the two confluence regions P are symmetrically distributed about the reference plane V. The exhaust chamber 1-41 of the exhaust structure 1-4 communicates with the two confluence regions P, and the exhaust chamber 1-41 is symmetrically distributed about the reference plane V. The gas outlet T of the exhaust structure 1-4 is located on the reference plane V.

[0095] Combination Figure 7 , Figure 10 for Figure 7 The cross-sectional view of the intermediate process chamber 10 in the plane C3-C3 passes through the fourth air inlet S4 and the second slit gas channel 15. There are two fourth air inlets S4, each connected to the second gap F between the annular outer frame 1-31 and the annular inner liner 1-32 via a second slit gas channel 15. The annular inner liner 1-32 has a gap connecting the second gap F to the reaction chamber A1. The third air inlet S3 can introduce a third process gas into the second gap F between the annular outer frame 1-31 and the annular inner liner 1-32 through the first slit gas channel 14 to maintain the stability of the process gas flow field within the reaction chamber A1. The two fourth air inlets S4 and the two second slit gas channels 15 can be symmetrically distributed about the reference plane V. The fourth air inlets S4 and the second slit gas channels 15 are arranged in pairs to prevent pressure differences from the third process gas introduced through a single slit gas channel, which could affect the process gas flow field distribution within the reaction chamber A1. Since the height of the slit gas channel has little impact on the process gas flow field in the reaction chamber A1, the two sets of fourth air inlets S4 and the second slit gas channel 15 can be symmetrically distributed about the reference plane V, or they can be asymmetrical or approximately symmetrical.

[0096] It should be understood that the two first slit gas channels 14 form a slit structure group, and the two second slit gas channels 15 form a slit structure group. This application embodiment illustrates two slit structure groups, each including two slit gas channels. The two slit gas channels are respectively disposed on both sides of the reference plane V along the third direction Y, so that the third process gas introduced into the second gap F will not cause significant disturbance to the process gas flow field in the reaction chamber A1.

[0097] Combination Figure 7 , Figure 11 for Figure 7 A cross-sectional view of the intermediate process chamber 10 in the plane C4-C4, which passes through the heating ring 3 and the carrier disk 2. The heating ring 3 surrounds the carrier disk 2, forming the aforementioned first gap H between the heating ring 3 and the carrier disk 2. This gap is used to heat the substrate placed on the carrier disk 2. The carrier disk 2 rotates under the support of an external support structure, thereby causing the substrate placed on the carrier disk 2 to rotate. The rotation speed of the substrate is approximately 30 revolutions per minute (RPM). The heating ring 3 has a heating ring slit 31 that penetrates the heating ring 3. This heating ring slit 31 is inclined at an angle α with the second direction X, and the inclination direction of the heating ring slit 31 relative to the second direction X is opposite to the rotation direction of the carrier disk 2. Figure 11In the example, assuming the carrier disk 2 rotates clockwise, the heating ring slit 31 is located at the center of the carrier disk 2, at a counterclockwise rotation angle α along the reference plane V. Specifically, the angle α between the heating ring slit 31 and the second direction X is 20-60°, such as 20°, 30°, 45°, 60°, etc. The setting of the heating ring slit 31 can offset part of the process gas flow field shift caused by the rotation of the carrier disk 2 carrying the substrate, which is beneficial to maintaining the uniformity of the process gas flow field in the reaction chamber A1.

[0098] Based on the structure of the process chamber provided in the embodiments of this application, the simulation of the overall gas flow space of the process chamber can be referred to Figure 12a and Figure 12b As shown. The areas reachable by each process gas are represented by solid lines, indicating their spatial extent; the lines represent the gas flow direction. The substrate loading channel 11, gas inlet channel 12, and gas outlet channel 13 are symmetrically distributed about the reference plane V. The gas inlet channel 12 and gas outlet channel 13 are arranged opposite each other along the second direction X. The substrate loading channel 11 and gas inlet channel 12 are located on the same side of the cavity 1, and are arranged along the first direction Z. The airflow direction of the first process gas from the substrate loading channel 11 into the support cavity A2 is the same as the airflow direction of the second process gas from the gas inlet channel 12 into the reaction cavity A1. It is assumed that the substrate loading channel 11 is located in a horizontal plane perpendicular to the first direction Z, and the gas inlet channel 12 is located in a horizontal plane perpendicular to the first direction Z; the horizontal plane containing the substrate loading channel 11 is parallel to the horizontal plane containing the gas inlet channel 12. The first process gas can enter the support cavity A2 through the substrate loading channel 11, and the second process gas can enter the reaction cavity A1 sequentially through the inlet section 121, premixing section 122, and mixing section 123 of the gas inlet channel 12. The gas in the reaction cavity A1 can be discharged sequentially through the collection section 131, guide section 132, and confluence section 133 of the gas outlet channel 13, and the exhaust cavity 1-41 of the exhaust structure 1-4. The exhaust port T of the exhaust structure 1-4 is located on the reference plane V to prevent the airflow direction at the exhaust port T from affecting the airflow distribution within the reaction cavity A1.

[0099] Please refer to the above. Figure 12a , Figure 12b The simulation diagram of the process gas flow field in reaction chamber A1 is shown below. Figure 13As shown, the reaction chamber A1 mainly contains the second process gas. The process gas flow field formed by the second process gas flows from the gas inlet channel 12 to the gas outlet channel 13 along the second direction X, and is basically symmetrically distributed about the reference plane V. This symmetrical distribution of the process gas flow field about the reference plane V has good uniformity, and when the substrate is processed in the reaction chamber A1, good processing results can be achieved. The direction of the first process gas entering the support chamber A2 through the substrate loading channel 11 is the same as the flow direction of the second process gas entering the reaction chamber A1 through the gas inlet channel 12, and the substrate loading channel 11 is also symmetrically distributed about the reference plane V. This makes the disturbance of the first process gas in the support chamber A2 to the second process gas in the reaction chamber A1 smaller, which is conducive to maintaining better uniformity of the process gas flow field in the reaction chamber A1. The paired arrangement of the first slit gas channel 14 and the second slit gas channel 15 can also minimize the disturbance of the third process gas to the process gas flow field in the reaction chamber A1. It should be understood that all the “symmetrical distribution” in the embodiments of this application are not symmetrical in an absolute sense, but rather symmetrical in a general structural sense, including but not limited to slight deviations caused by structural process tolerances and fit tolerances.

[0100] In some embodiments, such as Figure 14a and Figure 14b As shown, the substrate loading channel 11 and the gas inlet channel 12 are located on different sides of the process chamber. With axis Q as a reference, the substrate loading port R of the substrate loading channel 11 and the gas inlet S2 of the gas inlet channel 12 are in different directions. The airflow direction of the first process gas entering the support cavity A2 after entering the substrate loading channel 11 from the first gas inlet is different from the airflow direction of the second process gas entering the reaction cavity A1 after entering the gas inlet channel 12 from the second gas inlet S2; there is an angle β between them. An example of the airflow direction of the first process gas from the substrate loading channel 11 into the support cavity A2 is direction D1, and an example of the direction of the second process gas from the gas inlet channel 12 into the reaction cavity A1 is direction D2. An angle β exists between directions D1 and D2. For example, this angle β is approximately 90°. The cross-sectional structure of the process chamber can be seen by referring to... Figure 14c As shown, the substrate loading channel 11 is located on the sidewall between the gas inlet channel 12 and the gas outlet channel 13. The structure of the gas inlet channel 12 is similar to that in the above embodiment; for details, please refer to... Figure 4a As shown, it will not be described again here. The structure of the gas outlet channel 13 can also be similar to the structure in the above embodiment, and can be referred to for details. Figure 4bAs shown, further details will not be repeated here. In other words, the structure of the gas introduction channel 12 provided in this embodiment can be applied in a process chamber 10 where the substrate loading channel 11 and the gas introduction channel 12 are approximately parallel, or it can be applied in a process chamber 10 where there is an angle between the substrate loading channel 11 and the gas introduction channel 12. Similarly, the structure of the gas outlet channel 13 can also be applied in a process chamber where the substrate loading channel 11 and the gas introduction channel 12 are approximately parallel, or it can be applied in a process chamber where there is an angle between the substrate loading channel 11 and the gas introduction channel 12.

[0101] This application also provides a gas introduction structure that forms the gas introduction channel 12 provided in the above embodiments. This gas introduction structure can be applied in application scenarios requiring the introduction of process gases, including but not limited to… Figure 1a and Figure 1b The process chamber 10 shown and Figure 14a and Figure 14b The process chamber 10 shown.

[0102] The structure of the gas introduction channel 12 formed by this gas introduction structure can be referred to as follows. Figure 4a As shown, along the flow direction of the process gas, the gas introduction channel 12 specifically includes an introduction section 121, a premixing section 122, and a mixing section 123 connected in sequence. Further, the gas introduction structure can be referred to... Figure 5 as well as Figure 6a and Figure 6b As shown, the inlet section 121 includes multiple gas channels 1211 distributed along a third direction Y, each gas channel 1211 extending along a second direction X, and the multiple gas channels 1211 are symmetrically distributed about the reference plane V. The premixing section 122 is provided with multiple baffles 1221 distributed along a third direction Y, the multiple baffles 1221 dividing the premixing section 122 into multiple premixing channels 1222. Each premixing channel 1222 connects to one or more gas channels 1211. The mixing section 123 has a first port for connecting to the reaction chamber A1 and a second port for connecting to the premixing section 122. Along the third direction Y, the size of the first port is W1, and the size of the second port is W2, where W1 is larger than W2. This structural arrangement allows the second process gas in the mixing section 123 to diffuse first, reducing the gas flow convergence effect and improving the uniformity of the process gas. It should be understood that the structure of the gas inlet channel 12 formed by the gas inlet structure provided in this application embodiment has been described in detail in the previous embodiment of the process chamber 10, and will not be repeated here.

[0103] The gas introduction structure provided in this embodiment, comprising an introduction section 121, a premixing section 122, and a mixing section 123 in the gas introduction channel 12, can gradually and systematically mix the introduced process gas, making the process gas more uniform after passing through the gas introduction channel 12, and forming a process gas flow field approximately parallel to the second direction X. This process gas flow field can exhibit a relatively uniform distribution, which is beneficial to improving the uniformity of the process processing.

[0104] Based on the aforementioned process chamber, this application also provides a process processing device, such as... Figure 15 As exemplified, the process equipment includes an air inlet unit 20, an air outlet unit 30, and the aforementioned process chamber 10, which is exemplified as follows: Figure 2b The process chamber is shown. The air intake unit 20 includes a first air intake group 201 and a second air intake group 202. The first air intake group 201 is connected to the substrate loading channel 11 via a first air intake port S1, and can introduce a first process gas into the support cavity A2 through the substrate loading channel 11. The second air intake group 202 is connected to the gas introduction channel 12 via a second air intake port S2, and can introduce a second process gas into the reaction chamber A1 through the gas introduction channel 12. The air outlet unit 30 is connected to the gas outlet channel 13 via an air outlet port T, and can exhaust the gas in the reaction chamber A1 through the gas outlet channel 13.

[0105] The process chamber 10 in this process processing equipment has a more uniform process gas flow field, which can provide a good processing environment for process processing, thereby achieving better process processing results.

[0106] Obviously, those skilled in the art can make various modifications and variations to the embodiments of this application without departing from the spirit and scope of this application. Therefore, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application also intends to include these modifications and variations.

Claims

1. A process chamber (10), characterized in that, include: Cavity (1) and carrier disk (2); The cavity (1) has a reaction cavity and a support cavity distributed along a first direction; The carrier disk (2) is rotatably disposed inside the cavity (1), and the first gap between the carrier disk (2) and the inner wall of the cavity (1) is used to connect the reaction cavity and the support cavity; the rotation center of the carrier disk (2) is parallel to the first direction; The cavity (1) is provided with a substrate loading channel (11), a gas inlet channel (12) and a gas outlet channel (13); the substrate loading channel (11) is connected to the support cavity, and the substrate loading channel (11) is used for the substrate to pass through and for introducing a first process gas into the support cavity; The gas inlet channel (12) and the gas outlet channel (13) are respectively connected to the reaction chamber, and the gas inlet channel (12) and the gas outlet channel (13) are arranged opposite to each other along a second direction, which is perpendicular to the first direction; The gas inlet channel (12) is used to introduce a second process gas into the reaction chamber. Along the flow direction of the second process gas, the gas inlet channel (12) includes an inlet section (121), a premixing section (122), and a mixing section (123) connected in sequence. The inlet section (121) includes a plurality of gas channels (1211) distributed along a third direction, which is perpendicular to the reference plane. The premixing section (122) is provided with a plurality of baffles (1221) distributed along the third direction. The baffles (1221) divide the premixing section (122) into a plurality of premixing channels (1222), and each premixing channel (1222) is connected to one or more of the gas channels (1211). The mixing section (123) is connected between the reaction chamber and the premixing section (122), and the mixing section (123) is connected to all the premixing channels (1222). The gas outlet channel (13) is used to outlet the gas in the reaction chamber; The substrate loading channel (11), the gas inlet channel (12), and the gas outlet channel (13) are symmetrically distributed about the reference plane; the reference plane is parallel to the first direction and the second direction, and the rotation center of the carrier disk (2) is located on the reference plane; The airflow direction of the first process gas entering the support cavity from the substrate loading channel (11) is the same as the airflow direction of the second process gas entering the reaction cavity from the gas inlet channel (12).

2. The process chamber (10) according to claim 1, characterized in that, The mixing section (123) has a first port for connecting to the reaction chamber and a second port for connecting to the premixing section (122), the first port being larger than the second port.

3. The process chamber (10) according to claim 1 or 2, characterized in that, The gas inlet channel along the third party is divided into multiple flow channel regions, and each flow channel region corresponds to one or more of the premixing sections (122). The plurality of flow channel regions are symmetrically distributed about the reference plane, and the two flow channel regions that are symmetrically distributed about the reference plane have the same number of gas flow channels (1211).

4. The process chamber (10) according to claim 3, characterized in that, When controlling the second process gas through the gas inlet channel (12), the gas channels (1211) within the same flow channel area have the same gas flow rate.

5. The process chamber (10) according to claim 4, characterized in that, The two flow channel regions that are symmetrically distributed about the reference plane have the same gas flow rate.

6. The process chamber (10) according to claim 3, characterized in that, The number of gas channels (1211) in each of the aforementioned flow channel regions is 2-6.

7. The process chamber (10) according to claim 1 or 2 or any one of claims 4-6, characterized in that, The cavity (1) is also provided with a heating ring (3) surrounding the carrier plate (2); The heating ring (3) has a heating ring slit (31) that extends through the heating ring (3) along the first direction. The heating ring slit (31) is inclined at an angle to the second direction, and the inclination direction of the heating ring slit (31) relative to the second direction is opposite to the rotation direction of the carrier plate (2).

8. The process chamber (10) according to claim 7, characterized in that, The angle between the heating ring slit (31) and the second direction is 20°-60°.

9. The process chamber (10) according to claim 1 or 2 or any one of claims 4-6, characterized in that, The cavity (1) includes an upper cavity cover (1-1), a lower cavity cover (1-2), and a middle frame (1-3) connecting the upper cavity cover (1-1) and the lower cavity cover (1-2); the middle frame (1-3) includes an annular outer frame (1-31) and an annular inner liner (1-32) disposed within the annular outer frame (1-31); the upper cavity cover (1-1), the lower cavity cover (1-2), and the annular inner liner (1-32) enclose and form the internal space of the cavity (1); there is a second gap between the annular outer frame (1-31) and the annular inner liner (1-32), and the second gap communicates with the internal space of the cavity (1); The annular outer frame (1-31) is provided with at least one set of slit structure groups, and each set of slit structure groups includes two gas slit channels; Along the third direction, two gas slit channels in the same group of slit structures are located on both sides of the reference plane, and each gas slit channel is connected to the second gap to introduce a third process gas into the second gap.

10. The process chamber (10) according to claim 9, characterized in that, The two gas slit channels in the same set of slit structures are symmetrically distributed about the reference plane.

11. A process equipment, characterized in that, It includes an air intake unit, an air outlet unit, and a process chamber (10) as described in any one of claims 1-10; The air intake unit includes a first air intake group and a second air intake group. The first air intake group is connected to the substrate loading channel (11) to introduce a first process gas into the support cavity through the substrate loading channel (11). The second air intake group is connected to the gas introduction channel (12) to introduce a second process gas into the reaction cavity through the gas introduction channel (12). The gas outlet unit is connected to the process gas outlet channel (13) to outlet the gas in the reaction chamber.

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