A plasma jet nozzle and a plasma enhanced chemical vapor deposition device

Abstract

This application relates to the field of plasma coating technology, and specifically provides a plasma jet nozzle and a plasma enhanced chemical vapor deposition device. The nozzle includes: a nozzle body having a plasma excitation chamber and a reaction chamber; a precursor ejection tube located in the reaction chamber, the height of the bottom of which is less than the height of the air inlet; a first spiral gas flow guiding structure including a first circular ring mounting plate and a plurality of baffle plates, the plurality of baffle plates being circumferentially arrayed on the first circular ring mounting plate, the height of the top of the baffle plate being greater than the height of the air inlet, the height of the bottom of the baffle plate being less than the height of the air inlet and greater than the height of the bottom of the precursor ejection tube, the plate surface of the baffle plate being parallel to the axis of the precursor ejection tube, and one side of the baffle plate being inclined towards the axis of the precursor ejection tube; this nozzle can effectively solve the problems that the precursor material reacts insufficiently on the surface of the substrate and the crosslinking degree of the finally formed thin film is low due to some tiny droplets aggregating into droplets and / or large droplets exceeding the micron scale.

Description

Technical Field

[0001] This application relates to the field of plasma coating technology. Specifically, it relates to a plasma jet nozzle and a plasma enhanced chemical vapor deposition device. Background Art

[0002] Atmospheric pressure plasma coating process is widely used in fields such as automobile manufacturing and improvement of material surface properties. The atmospheric pressure plasma coating process requires activating and exciting the atomized precursor material (composed of gas and tiny droplets) in the reaction chamber of the plasma jet nozzle with plasma, so that the atomized precursor material undergoes a chemical reaction on the surface of the substrate, thereby depositing a thin film on the surface of the substrate. Since during the propagation of the atomized precursor material, some tiny droplets may coalesce into droplets larger than micrometers or even form large droplets, and when there are droplets larger than micrometers and / or large droplets in the precursor material, the activation and excitation effect of the plasma on the precursor material is limited. Therefore, in the related art, there are problems that due to some tiny droplets coalescing into droplets larger than micrometers and / or large droplets, the reaction of the precursor material on the surface of the substrate is insufficient and the crosslinking degree of the finally formed thin film is low, resulting in poor film formation quality of the atmospheric pressure plasma coating process.

[0003] Regarding the above problems, there is currently no effective technical solution. It should be noted that the above information disclosed in this part is only used to understand the background of the inventive concept of the present invention, and thus may include information that does not constitute the prior art. Summary of the Invention

[0004] The purpose of this application is to provide a plasma jet nozzle and a plasma enhanced chemical vapor deposition device, which can effectively solve the problems that due to some tiny droplets coalescing into droplets larger than micrometers and / or large droplets, the reaction of the precursor material on the surface of the substrate is insufficient and the crosslinking degree of the finally formed thin film is low.

[0005] In a first aspect, this application provides a plasma jet nozzle, which includes:

[0006] A nozzle body having a plasma excitation chamber and a reaction chamber. An air inlet communicating with the output end of the plasma excitation chamber is provided on the side wall of the reaction chamber, and the bottom of the reaction chamber communicates with the outlet of the nozzle body. The plasma excitation chamber is used to output plasma;

[0007] A precursor ejection pipe located in the reaction chamber, the height of the bottom of which is less than the height of the air inlet, for ejecting the atomized precursor material;

[0008] The first spiral gas flow guiding structure is sleeved outside the precursor ejection pipe and installed in the reaction chamber. It includes a first circular ring mounting plate and a plurality of baffle plates. The plurality of baffle plates are circumferentially arrayed on the first circular ring mounting plate. The height of the top of the baffle plate is greater than the height of the air inlet. The height of the bottom of the baffle plate is less than the height of the air inlet and greater than the height of the bottom of the precursor ejection pipe. The plate surface of the baffle plate is parallel to the axis of the precursor ejection pipe, and one side of the baffle plate is inclined towards the axis of the precursor ejection pipe.

[0009] A plasma jet nozzle provided by the present application can guide the plasma entering the reaction chamber to rotate around the precursor ejection pipe by using the first spiral gas flow guiding structure, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation that the tiny droplets in the atomized precursor material condense into droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by making the plasma rotate around the atomized precursor material ejected from the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material, so as to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problem that the precursor material reacts insufficiently on the substrate surface and the crosslinking degree of the finally formed thin film is low due to the condensation of some tiny droplets into droplets and / or large droplets exceeding the micron level, thereby effectively improving the film-forming quality of the atmospheric pressure plasma coating process.

[0010] Optionally, the plasma jet nozzle further includes a second spiral gas flow guiding structure. The second spiral gas flow guiding structure is installed on the nozzle body and located at the input end of the plasma excitation chamber. The second spiral gas flow guiding structure includes a second circular ring mounting plate and a plurality of inclined through holes. An ionization component is installed at the center of the second circular ring mounting plate. The plurality of inclined through holes are circumferentially arrayed on the second circular ring mounting plate. The input end of the inclined through hole is communicated with the gas supply component, and the output ends of the plurality of inclined through holes are all located in the plasma excitation chamber.

[0011] This technical solution is equivalent to guiding the gas entering the plasma excitation chamber into a spiral gas flow by using the second spiral gas flow guiding structure. Since the gas entering the plasma excitation chamber is guided into a spiral gas flow, and an ionization component is installed at the center of the second circular ring mounting plate, that is, the gas entering the plasma excitation chamber will rotate around the ionization component. That is, this technical solution can effectively extend the residence time of the gas in the plasma excitation chamber and the contact time between the gas and the ionization component. Therefore, this technical solution can effectively increase the reaction time of the gas and the particle group being bombarded, so that the gas and the particle group are fully ionized and cracked, thereby effectively increasing the number of plasmas.

[0012] Optionally, the number of inclined through holes is 6 - 10.

[0013] Optionally, a first limiting block is provided on the outer side wall of the second circular ring mounting plate, and the first limiting block can abut against the nozzle body.

[0014] Optionally, the output end of the plasma excitation chamber is connected to the air inlet of the reaction chamber through a Laval nozzle and an output pipe, and the output pipe is inclined downward.

[0015] Since the output end of the plasma excitation chamber of this technical solution is connected to the air inlet of the reaction chamber through a Laval nozzle and an output pipe, this technical solution is equivalent to using the Laval nozzle to increase the flow rate of the plasma, thereby effectively improving the reaction efficiency of the precursor material, and further effectively improving the coating efficiency of the atmospheric pressure plasma coating process.

[0016] Optionally, the plasma excitation chamber contracts towards the reaction chamber.

[0017] Since the plasma excitation chamber of this technical solution contracts towards the reaction chamber, this technical solution is equivalent to making the gas entering the plasma excitation chamber gather towards the ionization component, so that the gas and particle clusters are more easily bombarded, thereby effectively improving the ionization efficiency of the ionization component and increasing the number of plasmas.

[0018] Optionally, the spiral axis of the plasma passing through the first spiral gas flow guiding structure coincides with the axis of the precursor ejection pipe.

[0019] Optionally, a second limiting block is provided on the outer side wall of the first circular ring mounting plate, and the side wall of the reaction chamber has a groove that fits with the second limiting block, and the second limiting block can abut against the bottom of the groove.

[0020] Optionally, the number of baffle plates is 2 - 4.

[0021] In a second aspect, the present application also provides a plasma enhanced chemical vapor deposition device, and the plasma enhanced chemical vapor deposition device includes the plasma jet nozzle provided in the first aspect above.

[0022] A plasma enhanced chemical vapor deposition device provided by the present application can guide the plasma entering the reaction chamber to rotate around the precursor ejection tube by using the first spiral gas flow guiding structure, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation that the tiny droplets in the atomized precursor material coagulate into sub-micron-sized small droplets and / or large droplets during the propagation process. Since there are no sub-micron-sized small droplets and / or large droplets in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by making the plasma rotate around the atomized precursor material ejected from the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material, so as to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problems of insufficient reaction of the precursor material on the substrate surface and low crosslinking degree of the finally formed thin film caused by the coagulation of some tiny droplets into sub-micron-sized small droplets and / or large droplets, thereby effectively improving the film formation quality of the atmospheric pressure plasma coating process.

[0023] As can be seen from the above, a plasma jet nozzle and a plasma enhanced chemical vapor deposition device provided by the present application can guide the plasma entering the reaction chamber to rotate around the precursor ejection tube by using the first spiral gas flow guiding structure, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation that the tiny droplets in the atomized precursor material coagulate into sub-micron-sized small droplets and / or large droplets during the propagation process. Since there are no sub-micron-sized small droplets and / or large droplets in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by making the plasma rotate around the atomized precursor material ejected from the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material, so as to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problems of insufficient reaction of the precursor material on the substrate surface and low crosslinking degree of the finally formed thin film caused by the coagulation of some tiny droplets into sub-micron-sized small droplets and / or large droplets, thereby effectively improving the film formation quality of the atmospheric pressure plasma coating process. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 Schematic cross-sectional structure diagram of the precursor ejection tube and the plasma jet nozzle provided by the embodiment of the present application.

[0025] Figure 2 Schematic structure diagram of a plasma jet nozzle without a precursor ejection tube provided by the embodiment of the present application.

[0026] Figure 3 For Figure 2 the enlarged structural schematic diagram of position A in

[0027] Figure 4 This is the structural schematic diagram of the second spiral gas flow guiding structure and the first limiting block provided by the embodiment of the present application.

[0028] Figure 5 This is the structural schematic diagram of the first spiral gas flow guiding structure and the second limiting block provided by the embodiment of the present application.

[0029] Figure 6 This is the structural schematic diagram of the catalyst plate provided by the embodiment of the present application.

[0030] Reference numerals: 1, nozzle body; 2, plasma excitation chamber; 3, reaction chamber; 31, first reaction zone; 32, second reaction zone; 33, third reaction zone; 4, output pipe; 5, precursor ejection pipe; 6, first spiral gas flow guiding structure; 61, first circular ring mounting plate; 62, baffle plate; 7, second spiral gas flow guiding structure; 71, second circular ring mounting plate; 72, inclined through hole; 8, first limiting block; 9, Laval nozzle; 10, second limiting block; 11, groove; 12, catalyst plate; 13, opening; 14, film-like layer material ejection pipe. Detailed implementation manners

[0031] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Usually, the components of the embodiments of the present application described and shown in the accompanying drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents the selected embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts belong to the scope of protection of the present application.

[0032] It should be noted that: similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of the present application, terms such as "first" and "second" are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0033] In the first aspect, as Figures 1-6 shown, the present application provides a plasma jet nozzle, which includes:

[0034] A nozzle body 1, which has a plasma excitation chamber 2 and a reaction chamber 3. An air inlet communicating with the output end of the plasma excitation chamber 2 is provided on the side wall of the reaction chamber 3. The bottom of the reaction chamber 3 communicates with the outlet of the nozzle body 1. The plasma excitation chamber 2 is used to output plasma;

[0035] A precursor ejection pipe 5, which is located in the reaction chamber 3 and has a bottom height less than that of the air inlet, and is used to eject an atomized precursor material;

[0036] A first spiral air flow guiding structure 6, which is sleeved outside the precursor ejection pipe 5 and installed in the reaction chamber 3. It includes a first circular ring mounting plate 61 and a plurality of baffle plates 62. The plurality of baffle plates 62 are circumferentially arrayed on the first circular ring mounting plate 62. The top height of the baffle plate 62 is greater than that of the air inlet. The bottom height of the baffle plate 62 is less than that of the air inlet and greater than the bottom height of the precursor ejection pipe 5. The plate surface of the baffle plate 62 is parallel to the axis of the precursor ejection pipe 5, and one side of the baffle plate 62 is inclined towards the axis of the precursor ejection pipe 5.

[0037] Among them, the plasma jet nozzle of this embodiment can activate and excite the atomized precursor material by using plasma and spray the activated and excited atomized precursor material onto the surface of the substrate, so that a chemical reaction occurs on the surface of the substrate. The nozzle body 1 of this embodiment has a plasma excitation chamber 2 and a reaction chamber 3. Specifically, an air inlet communicating with the output end of the plasma excitation chamber 2 is provided on the side wall of the reaction chamber 3 of this embodiment, and the plasma will enter the reaction chamber 3 through the output end of the plasma excitation chamber 2 and the air inlet of the reaction chamber 3. The precursor ejection pipe 5 of this embodiment can be the ejection pipe of an existing precursor evaporation device. The precursor ejection pipe 5 is located in the reaction chamber 3. The height of the bottom of the precursor ejection pipe 5 is less than the height of the air inlet of the reaction chamber 3. The precursor ejection pipe 5 can eject the atomized precursor material, and the atomized precursor material is composed of gas and tiny droplets. The first spiral air flow guiding structure 6 of this embodiment is sleeved outside the precursor ejection pipe 5 and installed in the reaction chamber 3. Specifically, the first spiral air flow guiding structure 6 of this embodiment includes a first circular ring mounting plate 61 and a plurality of baffle plates 62. The plurality of baffle plates 62 are circumferentially arrayed on the first circular ring mounting plate 61. Since the height of the top of the baffle plate 62 is greater than the height of the air inlet, the height of the bottom of the baffle plate 62 is less than the height of the air inlet, the plate surface of the baffle plate 62 is parallel to the axis of the precursor ejection pipe 5, and one side of the baffle plate 62 is inclined towards the axis of the precursor ejection pipe 5. Therefore, the plasma entering the reaction chamber 3 from the air inlet will flow to the position where the baffle plate 62 is located. The baffle plate 62 can change the flow direction of the plasma. Under the combined action of the plurality of baffle plates 62, the plasma flows downward in a spiral state. That is, this embodiment is equivalent to using the first spiral air flow guiding structure 6 to guide the plasma entering the reaction chamber 3 into a spiral air flow. And since the height of the bottom of the baffle plate 62 of this embodiment is greater than the height of the bottom of the precursor ejection pipe 5, that is, the plasma will rotate around the precursor ejection pipe 5 and the atomized precursor material ejected from the precursor ejection pipe 5. And the temperature of the plasma is higher than the temperature of the atomized precursor material. That is, the plasma rotating around the precursor ejection pipe 5 will transfer heat to the atomized precursor material located in the precursor ejection pipe 5 through the precursor ejection pipe 5. And this embodiment can extend the contact time between the plasma and the precursor ejection pipe 5 and the atomized precursor material ejected from the precursor ejection pipe 5 by making the plasma rotate around the precursor ejection pipe 5 and the atomized precursor material ejected from the precursor ejection pipe 5. Therefore, this embodiment can effectively avoid the situation that the tiny droplets in the atomized precursor material coagulate into large droplets during the propagation process, and this embodiment can also fully activate and excite the atomized precursor material to make the precursor material react sufficiently on the surface of the substrate.

[0038] A plasma jet nozzle provided by the present application can guide the plasma entering the reaction chamber 3 to rotate around the precursor ejection tube 5 by using the first spiral gas flow guiding structure 6, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation that the tiny droplets in the atomized precursor material coagulate into droplets and / or large droplets larger than the micron level during the propagation process. Since there are no droplets and / or large droplets larger than the micron level in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by making the plasma rotate around the atomized precursor material ejected from the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material, so as to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problems of insufficient reaction of the precursor material on the substrate surface and low crosslinking degree of the finally formed thin film caused by the coagulation of some tiny droplets into droplets and / or large droplets larger than the micron level, thereby effectively improving the film forming quality of the atmospheric pressure plasma coating process.

[0039] In some preferred embodiments, the plasma jet nozzle further includes a second spiral gas flow guiding structure 7. The second spiral gas flow guiding structure 7 is installed on the nozzle body 1 and located at the input end of the plasma excitation chamber 2. The second spiral gas flow guiding structure 7 includes a second circular ring mounting plate 71 and a plurality of inclined through holes 72. An ionization component (not shown in the figure) is installed at the center of the second circular ring mounting plate 71. The plurality of inclined through holes 72 are circumferentially arranged on the second circular ring mounting plate 71, and the input end of the inclined through holes 72 is communicated with the gas supply component. This embodiment can use the ionization component to bombard the gas and particle clusters in the plasma excitation chamber 2, so as to ionize and crack the gas and particle clusters, thereby obtaining plasma. This embodiment is equivalent to guiding the gas entering the plasma excitation chamber 2 into a spiral gas flow by using the second spiral gas flow guiding structure 7. Since the gas entering the plasma excitation chamber 2 is guided into a spiral gas flow, and the ionization component is installed at the center of the second circular ring mounting plate 71, that is, the gas entering the plasma excitation chamber 2 will rotate around the ionization component, that is, this embodiment can effectively extend the residence time of the gas in the plasma excitation chamber 2 and the contact time between the gas and the ionization component. Therefore, this embodiment can effectively increase the reaction time of the gas and particle clusters being bombarded, so as to fully ionize and crack the gas and particle clusters, thereby effectively increasing the number of plasmas. Preferably, a sealing component is provided between the ionization component and the second circular ring mounting plate 71. The sealing component can be a sealing ring or a sealing strip or other components that can improve airtightness. This embodiment ensures that all the gas supplied by the gas supply component needs to pass through the inclined through holes 72 before entering the plasma excitation chamber 2 by providing a sealing component between the ionization component and the second circular ring mounting plate 71.

[0040] In some preferred embodiments, the number of the inclined through-holes 72 is 6 - 10. In this embodiment, the number of the inclined through-holes 72 is preferably 8. By setting the number of the inclined through-holes 72 to 6 - 10, this embodiment can effectively avoid the situation that the processing difficulty of the second spiral gas flow guiding structure 7 is high due to too many inclined through-holes 72 and the insufficient air intake of the plasma excitation chamber 2 due to too few inclined through-holes 72, which makes it difficult to form a stable spiral gas flow.

[0041] In some preferred embodiments, a first limiting block 8 is provided on the outer side wall of the second circular ring mounting plate 71, and the first limiting block 8 can abut against the nozzle body 1. In this embodiment, the second spiral gas flow guiding structure 7 can be fixed on the nozzle body 1 by making the first limiting block 8 abut against the nozzle body 1. The first limiting block 8 can prevent the second spiral gas flow guiding structure 7 from accidentally moving on the nozzle body 1. Therefore, this embodiment can ensure the position accuracy of the inclined through-holes 72, thereby effectively improving the stability and uniformity of the spiral gas flow in the plasma excitation chamber 2. Since the second spiral gas flow guiding structure 7 can be fixed on the nozzle body 1 by making the first limiting block 8 abut against the nozzle body 1 and can be removed from the nozzle body 1 by releasing the abutment between the first limiting block 8 and the nozzle body 1 in this embodiment, this embodiment can also effectively improve the convenience of installing or disassembling the second spiral gas flow guiding structure 7.

[0042] In some preferred embodiments, the output end of the plasma excitation chamber 2 is connected to the air inlet of the reaction chamber 3 through a Laval nozzle 9 and an output pipe 4, and the output pipe 4 is inclined downward. The Laval nozzle 9 in this embodiment is a nozzle designed based on the Bernoulli principle and the smooth flow principle. The cross-sectional area of the input end of the Laval nozzle 9 is different from that of the output end of the Laval nozzle 9. The Laval nozzle 9 can increase the flow rate of the fluid entering it. Since the output end of the plasma excitation chamber 2 in this embodiment is connected to the air inlet of the reaction chamber 3 through the Laval nozzle 9 and the output pipe 4, this embodiment is equivalent to using the Laval nozzle 9 to increase the flow rate of the plasma, thereby effectively improving the reaction efficiency of the precursor material and further effectively improving the coating efficiency of the atmospheric pressure plasma coating process.

[0043] In some preferred embodiments, the plasma excitation chamber 2 tapers towards the reaction chamber 3. Since the plasma excitation chamber 2 tapers towards the reaction chamber 3 in this embodiment, this embodiment is equivalent to making the gas entering the plasma excitation chamber 2 gather towards the ionization component, so that the gas and particle clusters are more easily bombarded, thereby effectively improving the ionization efficiency of the ionization component and increasing the number of plasmas.

[0044] In some preferred embodiments, the helical axis of the plasma passing through the first helical gas flow guiding structure 6 coincides with the center of the precursor ejection tube 5. This embodiment is equivalent to making the helical axis of the helical gas flow in the reaction chamber 3 coincide with the axis of the precursor ejection tube 5, that is, the plasma wraps the atomized precursor material. Therefore, when there is an inadequately reacted film layer on the substrate surface, the plasma located outside the atomized precursor material can bombard the film layer to reactivate the inadequately reacted film layer. Thus, this embodiment can make the originally inadequately reacted film layer react again by making the helical axis of the helical gas flow in the reaction chamber 3 coincide with the axis of the precursor ejection tube 5, so that the film layer reacts sufficiently, thereby effectively improving the film formation quality of the atmospheric pressure plasma coating process.

[0045] In some preferred embodiments, a second limiting block 10 is provided on the outer sidewall of the first circular mounting plate 61, and the sidewall of the reaction chamber 3 has a groove 11 that fits with the second limiting block 10, and the second limiting block 10 can abut against the bottom of the groove 11. Since the sidewall of the reaction chamber 3 in this embodiment has a groove 11 that fits with the second limiting block 10, this embodiment can fix the first helical gas flow guiding structure 6 in the reaction chamber 3 by sliding the second limiting block 10 along the groove 11 until it abuts against the bottom of the groove 11. This embodiment can also remove the first helical gas flow guiding structure 6 by sliding the second limiting block 10 away from the bottom of the groove 11. Therefore, this embodiment can effectively improve the convenience of disassembling or installing the first helical gas flow guiding structure 6.

[0046] In some preferred embodiments, the number of baffle plates 62 is 2 - 4. The number of baffle plates 62 in this embodiment is preferably 3. By setting the number of baffle plates 62 to 2 - 4, this embodiment can avoid the situation of excessive air flow resistance or the formation of turbulence due to too many baffle plates 62 on the premise of forming a stable helical gas flow.

[0047] In some preferred embodiments, the reaction chamber 3 includes a first reaction zone 31, and a catalyst plate 12 is provided in the first reaction zone 31, and the catalyst plate has a plurality of openings 13. The catalyst plate 12 in this embodiment is equivalent to a porous mesh plate. A catalyst is provided on the catalyst plate 12 in this embodiment, and the main components of the catalyst are preferably noble metals such as platinum, palladium, and / or rhodium. Since noble metals have the advantages of stable chemical properties, suitable working temperatures, high selectivity for polymerization reactions beneficial to film deposition, and the ability to catalyze the forward progress of reactions, this embodiment can catalyze the crosslinking reaction after the plasma bombards the precursor material by providing the catalyst plate 12 in the first reaction zone 31 to improve the reaction rate.

[0048] In some preferred embodiments, the reaction chamber 3 includes a second reaction zone 32 and a third reaction zone 33. The input end of the second reaction zone 32 is connected to the output end of the first reaction zone 31, and the output end of the second reaction zone 32 is connected to the input end of the third reaction zone 33. The second reaction zone 32 expands away from the first reaction zone 31, and the third reaction zone 33 contracts away from the second reaction zone 32. The output end of the third reaction zone 33 is connected to the film-like layer ejection pipe 14. Since the second reaction zone 32 of this embodiment expands away from the first reaction zone 31, that is, the diameter of the second reaction zone 32 is larger than the diameter of the first reaction zone 31, this embodiment can enable the plasma, precursor material, and particle clusters obtained after bombardment flowing out of the first reaction zone 31 to react uniformly in a relatively larger space. And since the third reaction zone 33 of this embodiment contracts away from the second reaction zone 32, this embodiment can use the third reaction zone 33 to concentrate substances such as plasma, precursor material, and particle clusters, so as to form a laminar flow characteristic decreasing from the center of the film-like layer material ejection pipe 14 to the pipe wall of the film-like layer material ejection pipe 14 in the film-like layer material ejection pipe 14, so that the finally formed film-like layer material is concentrated and ejected from the center of the film-like layer material ejection pipe 14, thereby effectively reducing the situation that the film-like layer material ejected from the film-like layer material ejection pipe 14 splashes around and the film-like layer material adheres to the inside of the film-like layer material ejection pipe 14.

[0049] As can be seen from the above, a plasma jet nozzle provided by the present application can guide the plasma entering the reaction chamber 3 to rotate around the precursor ejection pipe 5 by using the first spiral gas flow guiding structure 6, so as to heat and atomize the precursor material by the plasma through heat conduction, thereby avoiding the situation that the tiny droplets in the atomized precursor material coagulate into droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by making the plasma rotate around the atomized precursor material ejected from the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material, so as to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problems of insufficient reaction of the precursor material on the substrate surface and low crosslinking degree of the finally formed thin film caused by the coagulation of some tiny droplets into droplets and / or large droplets exceeding the micron level, thereby effectively improving the film formation quality of the atmospheric pressure plasma coating process.

[0050] In a second aspect, the present application also provides a plasma enhanced chemical vapor deposition device, and the plasma enhanced chemical vapor deposition device includes the plasma jet nozzle provided in the first aspect above.

[0051] The embodiment of the present application provides a plasma enhanced chemical vapor deposition device. The plasma enhanced chemical vapor deposition device includes the plasma jet nozzle provided in the above first aspect. The principle of the plasma enhanced chemical vapor deposition device provided in this embodiment is the same as that of the plasma jet nozzle provided in the above first aspect, and will not be elaborated in detail here.

[0052] As can be seen from the above, the plasma jet nozzle and the plasma enhanced chemical vapor deposition device provided by the present application can guide the plasma entering the reaction chamber 3 to rotate around the precursor ejection tube 5 by using the first spiral gas flow guiding structure 6, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation that the tiny droplets in the atomized precursor material condense into droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by rotating the plasma around the atomized precursor material ejected from the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material, so as to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problems of insufficient reaction of the precursor material on the substrate surface and low crosslinking degree of the finally formed thin film caused by the condensation of some tiny droplets into droplets and / or large droplets exceeding the micron level, thereby effectively improving the film forming quality of the atmospheric pressure plasma coating process.

[0053] In the embodiments provided by the present application, it should be understood that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0054] The above are only the embodiments of the present application and are not used to limit the protection scope of the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A plasma jet nozzle, characterized in that, The plasma jet nozzle includes: A nozzle body having a plasma excitation chamber and a reaction chamber. An air inlet communicating with the output end of the plasma excitation chamber is provided on the side wall of the reaction chamber. The bottom of the reaction chamber communicates with the outlet of the nozzle body. The plasma excitation chamber is used to output plasma. A precursor ejection pipe located in the reaction chamber. The height of the bottom of the precursor ejection pipe is less than the height of the air inlet and is used to eject atomized precursor materials. A first spiral air flow guiding structure sleeved outside the precursor ejection pipe and installed in the reaction chamber. It includes a first circular ring mounting plate and a plurality of baffle plates. The plurality of baffle plates are circumferentially arrayed on the first circular ring mounting plate. The height of the top of the baffle plate is greater than the height of the air inlet. The height of the bottom of the baffle plate is less than the height of the air inlet and greater than the height of the bottom of the precursor ejection pipe. The plate surface of the baffle plate is parallel to the axis of the precursor ejection pipe. One side of the baffle plate is inclined towards the axis of the precursor ejection pipe. A second spiral air flow guiding structure installed on the nozzle body and located at the input end of the plasma excitation chamber. The second spiral air flow guiding structure includes a second circular ring mounting plate and a plurality of inclined through holes. An ionization component is installed at the center of the second circular ring mounting plate. The plurality of inclined through holes are circumferentially arrayed on the second circular ring mounting plate. The input end of the inclined through hole communicates with a gas supply component. The output ends of the plurality of inclined through holes are all located in the plasma excitation chamber.

2. The plasma jet nozzle according to claim 1, characterized in that, The number of the inclined through holes is 6 - 10.

3. The plasma jet nozzle according to claim 1, wherein, A first limiting block is provided on the outer side wall of the second circular ring mounting plate, and the first limiting block can abut against the nozzle body.

4. The plasma jet nozzle according to claim 1, wherein The output end of the plasma excitation chamber is connected to the air inlet of the reaction chamber through a Laval nozzle and an output pipe, and the output pipe is inclined downward.

5. The plasma jet nozzle according to claim 1, characterized in that, The plasma excitation chamber contracts towards the reaction chamber.

6. The plasma jet nozzle according to claim 1, characterized in that The spiral axis of the plasma passing through the first spiral air flow guiding structure coincides with the axis of the precursor ejection pipe.

7. The plasma jet nozzle according to claim 1, wherein A second limiting block is provided on the outer side wall of the first circular ring mounting plate. The side wall of the reaction chamber has a groove that fits with the second limiting block, and the second limiting block can abut against the bottom of the groove.

8. The plasma jet nozzle according to claim 1, characterized in that, The number of the baffle plates is 2 - 4.

9. A plasma enhanced chemical vapor deposition apparatus, characterized in that, The plasma enhanced chemical vapor deposition equipment includes the plasma jet nozzle according to any one of claims 1 - 8.

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