Fast modeling method and device for power diode real-time model

Abstract

The application discloses a kind of fast modeling method and device of power diode real-time model, to solve the technical problem that related art cannot meet the demand of behavior level modeling and real-time simulation under the lack of semiconductor physical parameters.The method comprises: using two-node model to connect power diode, as the behavior model of power diode, access the main circuit of power system;The circuit form of behavior model includes turn-off circuit, and the turn-off stage of turn-off circuit includes first turn-off circuit stage and second turn-off circuit stage;In the first turn-off circuit stage, control turn-off circuit adopts the circuit form of large resistance parallel controllable current source, and calculate the output value of controllable current source corresponding to the first turn-off circuit stage;When the turn-off stage of turn-off circuit changes from the first turn-off circuit stage to the second turn-off circuit stage, control the controllable current source to zero.Thereby, under the lack of semiconductor physical parameters, behavior level modeling and real-time simulation demand can also be met.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power simulation, in particular to a fast modeling method of a power diode real-time model, a fast modeling device of a power diode real-time model, an electronic device and a storage medium. BACKGROUND

[0002] In the early 1950s, power diodes (then known as semiconductor rectifiers) began to be applied. Its basic structure and working principle are consistent with the diodes in information electronic circuits. Both are based on semiconductor PN junctions to realize the functions of forward conduction and reverse blocking. The power diode is a non-controllable device. Its conduction and shutdown are completely determined by the voltage and current it bears in the main circuit. System devices using power diode devices are widely used in household appliances. They are also used in high-end industries such as rail transit, smart grid, aerospace, ship drive, new energy, electric vehicles, etc.

[0003] The power diode model involves the interaction of multiple physical fields such as electricity, magnetism, heat, and force. Multi-physical field modeling and analysis are important tools for studying thermal management, electromagnetic compatibility, and mechanical fatigue. However, for ordinary users, only the data sheet of the power diode device provided by the manufacturer can be obtained. The data sheet does not provide specific material parameters, doping concentrations, and other very specific data, which causes great confusion and difficulty for users to use multi-physical field modeling tools.

[0004] In traditional power diode circuit simulation, several circuit models are mainly used, such as analytical models, behavioral models, and numerical models. Among them, the analytical model is based on the physical principles of the device and establishes a model that can accurately describe the steady-state and transient operation of the device. However, this method is computationally intensive and difficult to implement real-time simulation. The behavioral model provides a good prediction of the performance of the device, but ignores detailed physical properties. The numerical model can simulate the electrical, thermal, and optical properties of the device using the finite element method without manufacturing physical devices, but the calculation is very time-consuming.

[0005] Generally speaking, the behavioral model is the best real-time model among these models, and the computing resources used are also the least. However, other models require a large amount of resources and execution time. However, if a behavioral model is used for power diode modeling, due to the neglect of detailed physical properties, there is a problem that it cannot meet the requirements of behavioral-level modeling and real-time simulation in the absence of semiconductor physical parameters. SUMMARY

[0006] The application provides a fast modeling method of a power diode real-time model, a fast modeling device of a power diode real-time model, an electronic device and a storage medium, and aims to solve or partially solve the technical problem that in the prior art, behavior-level modeling and real-time simulation requirements cannot be met in the absence of semiconductor physical parameters.

[0007] The application provides a fast modeling method of a power diode real-time model, which comprises the following steps:

[0008] A two-node model is used to connect the power diode, which is used as a behavior model of the power diode and is connected to a main circuit of a power system; the circuit form of the behavior model comprises an off circuit, and the off stage of the off circuit comprises a first off circuit stage and a second off circuit stage;

[0009] In the first off circuit stage, the off circuit is controlled to have a circuit form of a large resistance in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first off circuit stage is calculated:

[0010] When the off stage of the off circuit changes from the first off circuit stage to the second off circuit stage, the controllable current source is controlled to be zero.

[0011] Optionally, the calculation of the output value of the controllable current source corresponding to the first off circuit stage comprises:

[0012] The maximum reverse recovery current, the total amount of reverse recovery charge and the first-stage recovery time from a zero-crossing point to the maximum reverse recovery current of the power diode are obtained;

[0013] The reverse recovery time is calculated according to the maximum reverse recovery current and the total amount of reverse recovery charge;

[0014] The second-stage recovery time is back-calculated based on the reverse recovery time and in combination with the first-stage recovery time; the second-stage recovery time is the time from the maximum reverse recovery current to a point 25% of the maximum reverse recovery current and then to the zero-crossing point in a straight line;

[0015] The output value of the controllable current source corresponding to the first off circuit stage is calculated according to the second-stage recovery time and in combination with reverse first-order process analysis.

[0016] Optionally, the calculation of the output value of the controllable current source corresponding to the first off circuit stage according to the second-stage recovery time and in combination with reverse first-order process analysis comprises:

[0017] According to the second stage recovery time, a first order time constant corresponding to the first turn-off circuit stage is inversely deduced based on a first order characteristic of reverse recovery;

[0018] According to the first order time constant, in combination with a preset controllable current source expected value, a controllable current source output value corresponding to the first turn-off circuit stage is calculated.

[0019] Optionally, the controllable current source output value is calculated by the following formula:

[0020]

[0021] Wherein, represents the controllable current source output value; represents the preset controllable current source expected value; represents the first order time constant; represents a bilinear transformation ; represents a sampling period; represents a z transform.

[0022] Optionally, after the power diode is turned off from a normal operating point, the turn-off circuit enters the first turn-off circuit stage;

[0023] The change process of the diode current corresponding to the first turn-off circuit stage is:

[0024] The diode current performs current reverse dynamic change in the form of straight line decline;

[0025] When the diode current passes through the zero point, the reverse recovery time starts to be accumulated, and a straight line is drawn from the point of 25% of the maximum reverse recovery current to the zero point.

[0026] After the maximum reverse recovery current is reached, the diode current starts to show a decay state of first order current change.

[0027] Optionally, the fast modeling method of the power diode real-time model further comprises:

[0028] When the reverse recovery current of the power diode decays to near zero point, the turn-off stage of the turn-off circuit is changed from the first turn-off circuit stage to the second turn-off circuit stage.

[0029] Optionally, the circuit form of the behavior model further comprises a on-state circuit, and the on-state circuit adopts a circuit form of resistance in parallel with a controllable current source.

[0030] The application further provides a fast modeling device of a power diode real-time model, comprising:

[0031] A behavior model construction unit is configured to connect a power diode with a two-node model as a behavior model of the power diode, and access a main circuit of a power system; a circuit form of the behavior model comprises an off circuit, and an off stage of the off circuit comprises a first off circuit stage and a second off circuit stage;

[0032] A first off circuit stage control unit is configured to control the off circuit to adopt a circuit form of a large resistance in parallel with a controllable current source in the first off circuit stage, and calculate a controllable current source output value corresponding to the first off circuit stage:

[0033] A second off circuit stage control unit is configured to control the controllable current source to be zero when the off stage of the off circuit is switched from the first off circuit stage to the second off circuit stage.

[0034] The application further provides an electronic device, which comprises a processor and a memory:

[0035] The memory is configured to store program code and transmit the program code to the processor;

[0036] The processor is configured to execute the fast modeling method of the real-time model of the power diode according to instructions in the program code.

[0037] The application further provides a computer readable storage medium configured to store program code, and the program code is configured to execute the fast modeling method of the real-time model of the power diode.

[0038] As can be seen from the above technical solutions, the application has the following advantages:

[0039] A fast modeling method of a power diode real-time model is provided. A two-node model is used to connect the power diode as a behavior model of the power diode, which is connected to a main circuit of a power system; a circuit form of the behavior model includes an off circuit, and an off stage of the off circuit includes a first off circuit stage and a second off circuit stage; in the first off circuit stage, a circuit form of the off circuit controlled by a large resistor in parallel with a controllable current source is adopted, and a controllable current source output value corresponding to the first off circuit stage is calculated; when the off stage of the off circuit is changed from the first off circuit stage to the second off circuit stage, the controllable current source is set to zero. By adopting the technical solution provided in the application, the real-time behavior level modeling of the power diode is realized by building the behavior model of the "two-node model + power diode", and further dividing the off circuit of the behavior model into the first off circuit stage (equivalent to that the behavior model only has the controllable current source, at this time, the PN junction of the power diode is still in the forward conducting state) and the second off circuit stage (at this time, the controllable current source is set to zero, equivalent to that the behavior model only has the large resistor, for the power diode, a higher resistance is formed, which can effectively prevent most of the current from passing through, the PN junction of the power diode is turned into reverse blocking, and the off is completed). Based on the change of the off stage of the behavior model off circuit, combined with the reverse characteristics of the power diode, the control of the power diode from the conducting to the off can be completed in a very short time, and good real-time performance is achieved. In addition, the controllable current source output value of the first off circuit stage can be calculated under the condition that the semiconductor physical parameters are not so comprehensive. Thus, the behavior level modeling and real-time simulation requirements can be met under the condition that the semiconductor physical parameters are not available. BRIEF DESCRIPTION OF DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0041] Figure 1 A flow chart of steps of a fast modeling method of a power diode real-time model;

[0042] Figure 2 A circuit form schematic diagram of a power diode behavior model;

[0043] Figure 3 A schematic diagram of a change process of a diode current corresponding to a first off circuit stage;

[0044] Figure 4 A schematic diagram of a whole flow of a fast modeling method of a power diode real-time model;

[0045] Figure 5 A structural block diagram of a fast modeling device for a power diode real-time model. DETAILED DESCRIPTION

[0046] The embodiment of the present application provides a fast modeling method for a power diode real-time model, a fast modeling device for a power diode real-time model, an electronic device and a storage medium, and is used for solving or partially solving the technical problem that the behavior level modeling and real-time simulation requirements cannot be met in the related art under the lack of semiconductor physical parameters.

[0047] In order to make the application purpose, features and advantages of the present application more obvious and easy to understand, the technical solutions in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the following described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the protection scope of the present application.

[0048] As an example, the traditional power diode circuit simulation mainly adopts several circuit models such as an analytical model, a behavior model and a numerical model. Among them, the analytical model is based on the physical principle of the device, and a model capable of accurately describing the steady state and transient operation of the device is established. However, this way is large in calculation amount and difficult to realize real-time simulation. The behavior model provides a good prediction of the performance of the device, but ignores the detailed physical characteristics. The numerical model can simulate the electrical, thermal and optical characteristics of the device by using the finite element method without manufacturing a physical device, but the calculation is very time-consuming.

[0049] The selection of the modeling method depends on the accuracy required by the simulation, the calculation resource, the convergence property, the effective range and the time consumption of the calculation program. The analytical model and the numerical model consume a large amount of calculation resources and are not suitable for real-time simulation scenarios. Therefore, the behavior model with the best real-time performance, acceptable accuracy and low calculation resource consumption is selected for fast modeling and real-time simulation of the power diode, which is the currently feasible and recommended modeling scheme. That is, the behavior model is the best model in real-time among the several models. And the calculation resources used are also the least. And other models need to consume a large amount of resources and execution time.

[0050] But if the behavior model is used for power diode modeling, due to the neglect of detailed physical characteristics, there is also a problem that cannot meet the needs of behavior level modeling and real-time simulation in the absence of semiconductor physical parameters. The present application considers that if the user can directly extract the gate opening and closing and other characteristic parameters of the power diode from the power diode device data table, and directly establish behavior level modeling on this basis, the modeling needs of most users for the opening and closing conditions of the switching component can be solved. At the same time, the calculation of such a model is accelerated, and it is embedded into the hardware-in-the-loop scene, which will greatly improve the universality and practicality of such a model.

[0051] Therefore, one of the core points of the embodiments of the present application is to provide a fast modeling method of a power diode real-time model with reverse recovery characteristics. A two-node model is used to connect the power diode as a behavior model of the power diode, which is connected to the main circuit of the power system; the circuit form of the behavior model includes a turn-off circuit, and the turn-off stage of the turn-off circuit includes a first turn-off circuit stage and a second turn-off circuit stage; in the first turn-off circuit stage, the turn-off circuit is controlled to adopt the circuit form of a large resistance in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first turn-off circuit stage is calculated; when the turn-off stage of the turn-off circuit changes from the first turn-off circuit stage to the second turn-off circuit stage, the controllable current source is controlled to be zero. Based on the technical scheme provided by the present application, the needs of behavior level modeling and real-time simulation can be met in the absence of semiconductor physical parameters, the hardware-in-the-loop test requirements of normal working on-state and off-state power consumption needs are realized, and the safety and adequacy of the power system and its control system are further evaluated.

[0052] Referring to Figure 1 , a step flow chart of a fast modeling method of a power diode real-time model provided by the embodiments of the present application is shown, which can specifically include the following steps:

[0053] Step 101, a two-node model is used to connect the power diode as a behavior model of the power diode, which is connected to the main circuit of the power system; the circuit form of the behavior model includes a turn-off circuit, and the turn-off stage of the turn-off circuit includes a first turn-off circuit stage and a second turn-off circuit stage;

[0054] Considering that the real-time simulation is realized based on the constructed power diode model, the circuit form nodes should be as few as possible. In the embodiments of the present application, a two-node model is used to connect the power diode as a behavior model of the power diode, which is connected to the main circuit of the power system, so that the operation amount of the main circuit can be greatly reduced.

[0055] Figure 2 A circuit form schematic diagram of a power diode behavior model provided by the embodiments of the present application is shown.

[0056] Combined with Figure 2The circuit form of the power diode behavior model can be divided into a conduction circuit form and an off-circuit form. Both of the two circuit forms can adopt a circuit form of a large resistance in parallel with a controllable current source. The off-circuit form can be further divided into an off-circuit stage 1 and an off-circuit stage 2. For the convenience of distinction, the off-circuit stage 1 is defined as a first off-circuit stage, and the off-circuit stage 2 is defined as a second off-circuit stage. In the first off-circuit stage, a large resistance in parallel with a controllable current source is adopted, which is equivalent to connecting only the controllable current source to the main circuit. In the second off-circuit stage, the controllable current source is set to zero, which is equivalent to connecting only the large resistance to the main circuit.

[0057] The specific resistance value of the large resistance can be set according to the actual situation. When the working current in the circuit is small, for example, the working current in the circuit is in units of milliamperes, a resistance with a resistance value of several kilohms (kΩ) can be used as the large resistance. When the working voltage or the working current in the circuit is large, for example, in high-voltage applications, in order to ensure sufficient insulation and safety, a resistance with a higher resistance value can be used as the large resistance. For example, in applications of kilovolt-level voltage, a resistance with a resistance value of the order of megohms (MΩ) can be used as the large resistance. It can be understood that the present application does not limit this.

[0058] Step 102, in the first off-circuit stage, the off-circuit adopts a circuit form of a large resistance in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first off-circuit stage is calculated:

[0059] Figure 3 A schematic diagram of the change process of the diode current corresponding to the first off-circuit stage provided by the embodiment of the present application is shown.

[0060] As shown in Figure 3 , the power diode starts to shut down from the normal operating point, and the current reversal dynamic change of the first off-circuit stage is in the form of a straight line. The slope of this stage is directly linearly related to the size of the connected resistance. The slope can be found by checking the device data table. After passing through the zero point, the reverse recovery time starts to accumulate, and a straight line is drawn from the point of 25% of the maximum reverse recovery current to the zero point. The maximum reverse recovery current and the total reverse recovery charge can be found in the device data table. After reaching the maximum reverse recovery current, the diode current starts to show a first-order current change in the decay state.

[0061] Therefore, it can be seen that after the power diode is turned off from the normal operating point, the turn-off circuit enters the first turn-off circuit stage, and the change process of the diode current corresponding to the first turn-off circuit stage is: the diode current reverses dynamically in the form of a straight line drop; after the diode current passes through the zero point, the reverse recovery time starts to accumulate, and a straight line is drawn from the maximum reverse recovery current to the 25% point of the maximum reverse recovery current to the zero point; after reaching the maximum reverse recovery current, the diode current starts to show a first-order current change decay state.

[0062] In some embodiments, the process of calculating the controllable current source output value corresponding to the first turn-off circuit stage can be implemented by performing the following sub-steps S01 to S04:

[0063] Step S01: Obtain the maximum reverse recovery current of the power diode, the total amount of reverse recovery charge, and the first stage recovery time from the zero point to the maximum reverse recovery current;

[0064] As can be known from the foregoing, the maximum reverse recovery current and the total amount of reverse recovery charge can be found in the device data sheet.

[0065] At the same time, according to the size of the access resistance, the slope from the steady state to the maximum reverse recovery current can also be obtained. Therefore, the curve from the steady state to the maximum reverse recovery current can also be determined. Further, the first stage recovery time from the zero point to the maximum reverse recovery current can be obtained.

[0066] Step S02: Calculate the reverse recovery time according to the maximum reverse recovery current and the total amount of reverse recovery charge;

[0067] In the case where the reverse recovery time is unknown, the following formula can be used for estimation:

[0068]

[0069] Step S03: Based on the reverse recovery time, combine the first stage recovery time to back-calculate the second stage recovery time;

[0070] According to the reverse recovery time and the first stage recovery time , the second stage recovery time can be inferred by the following formula:

[0071]

[0072] wherein, the second stage recovery time The maximum reverse recovery current of the power diode At the maximum value of reverse recovery current The time it takes to extend a straight line from 25% of the points to the point crossing zero.

[0073] Step S04: Based on the recovery time of the second stage and combined with the analysis of the reverse first-order process, calculate the output value of the controllable current source corresponding to the first turn-off circuit stage.

[0074] The reverse recovery time was calculated earlier. This is based on the assumption of the triangle area formula. The actual change curve is roughly a first-order process. Specifically, the change from 100% to the 25% observation point following a first-order decay curve can be considered as... The first-order process. According to... Calculate After obtaining the value, the output value of the controllable current source can be calculated using a first-order formula.

[0075] In the specific implementation, based on the second-phase recovery time Combining the analysis of the reverse first-order process, the output value of the controllable current source corresponding to the first turn-off circuit stage can be calculated as follows: First, based on the recovery time of the second stage... Based on the first-order characteristics of reverse recovery, the first-order time constant corresponding to the first turn-off circuit stage is derived in reverse. Then, based on the first-order time constant... Combined with the preset expected value of the controllable current source Calculate the output value of the controllable current source corresponding to the first turn-off circuit stage. .

[0076] The output value of the controllable current source can be calculated using the following formula:

[0077]

[0078] In the formula, This represents the output value of the controllable current source; This represents the preset expected value of the controllable current source; Indicates the first-order time constant; Represents bilinear transformation ; Indicates the sampling period; This represents the z-transform.

[0079] It is understandable that the desired value of a controllable current source can be preset. For example, when controlling a device to turn off, it can be predicted in advance that the control current will be zero.

[0080] This is the first-order time constant in the circuit. For example... (i.e., resistance * capacitance) (i.e., inductance / resistance). More specifically, it can be understood as... In a first-order circuit change, the time from the start of the change to the circuit response reaching 63.2% of its maximum value is considered. Assuming a rising state starting from 0, the maximum reverse recovery current is calculated according to the embodiment of this invention. It begins to decay, after a period of time After that, it will decay to 36.8% of the original value. It is an important parameter for the response of the reaction circuit. A shorter timeframe means a faster circuit response. A longer duration indicates a slower circuit response. In this embodiment of the invention, the following settings are provided: The reason is that from It takes time for the value to decay to 25.01% from full value. The time, take its approximate value. .

[0081] The calculation methods listed in this step can significantly reduce the computational workload of calculating the reverse recovery current of power diodes. Furthermore, they closely match actual equipment datasheets, thus simplifying the conditions for physical interpretability.

[0082] Step 103: When the shutdown phase of the shutdown circuit changes from the first shutdown phase to the second shutdown phase, the controllable current source is set to zero.

[0083] Combination Figure 3 When the reverse recovery current of the power diode decays to near zero, the turn-off phase of the turn-off circuit changes from the first turn-off phase to the second turn-off phase, which is the high-impedance state. At this time, the controllable current source is set to zero, which is equivalent to connecting only a large resistor to the main circuit.

[0084] In this embodiment of the invention, a rapid modeling method for a real-time model of a power diode with reverse recovery characteristics is proposed. Based on the technical solution provided by this invention, even in the absence of semiconductor physical parameters, the requirements for behavioral-level modeling and real-time simulation can be met, and the hardware-in-the-loop testing requirements for power consumption in both on-state and off-state operation can be achieved, thereby further evaluating the safety and adequacy of the power system and its control system.

[0085] For better illustration, refer to Figure 4 This diagram illustrates the overall flow of a rapid modeling method for a real-time power diode provided by an embodiment of the present invention. It should be noted that this embodiment only provides a brief description of the general flow of rapid modeling for a real-time power diode. The specific implementation process of each step can be understood by referring to the relevant content in the foregoing embodiments, and will not be elaborated upon here. It is understood that the present invention does not impose any limitations on this.

[0086] Step 401: Connect the power diode using a two-node model as the behavior model of the power diode and connect it to the main circuit of the power system; wherein, the circuit form of the behavior model includes a conducting circuit and a turning-off circuit, and the turning-off phase of the turning-off circuit includes a first turning-off phase and a second turning-off phase.

[0087] Step 402: When the circuit configuration of the behavior model is a through circuit, the control adopts a circuit configuration of a resistor connected in parallel with a controllable current source;

[0088] Step 4031: When the circuit configuration of the behavioral model is a turn-off circuit, in the first turn-off circuit stage of the turn-off circuit, the control of the turn-off circuit adopts the circuit configuration of a large resistor connected in parallel with a controllable current source.

[0089] Step 4032: Obtain the maximum reverse recovery current, the total reverse recovery charge, and the first-stage recovery time from the zero-crossing point to the maximum reverse recovery current of the power diode;

[0090] Step 4033: Calculate the reverse recovery time based on the maximum reverse recovery current and the total reverse recovery charge;

[0091] Step 4034: Based on the reverse recovery time and the first-stage recovery time, calculate the second-stage recovery time.

[0092] Step 4035: Based on the recovery time of the second stage and combined with the analysis of the reverse first-order process, calculate the output value of the controllable current source corresponding to the first turn-off circuit stage;

[0093] Step 4036: When the shutdown phase of the shutdown circuit changes from the first shutdown phase to the second shutdown phase, the control will set the controllable current source to zero.

[0094] Reference Figure 5 The diagram illustrates a structural block diagram of a rapid modeling device for a real-time model of a power diode provided in an embodiment of the present invention, which may specifically include:

[0095] The behavior model construction unit 501 is used to connect the power diode using a two-node model as the behavior model of the power diode and connect it to the main circuit of the power system; the circuit configuration of the behavior model includes a shutdown circuit, and the shutdown phase of the shutdown circuit includes a first shutdown circuit phase and a second shutdown circuit phase.

[0096] The first shutdown circuit stage control unit 502 is used to control the shutdown circuit to adopt a circuit configuration of a large resistor connected in parallel with a controllable current source during the first shutdown circuit stage, and to calculate the output value of the controllable current source corresponding to the first shutdown circuit stage.

[0097] The second shutdown circuit stage control unit 503 is used to control the controllable current source to zero when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage.

[0098] In one alternative embodiment, the first shutdown phase control unit 502 includes:

[0099] The data acquisition unit is used to acquire the maximum reverse recovery current, the total reverse recovery charge, and the first-stage recovery time from the zero-crossing point to the maximum reverse recovery current of the power diode.

[0100] The reverse recovery time calculation unit is used to calculate the reverse recovery time based on the maximum value of the reverse recovery current and the total amount of reverse recovery charge.

[0101] The second-stage recovery time calculation unit is used to calculate the second-stage recovery time based on the reverse recovery time and the first-stage recovery time. The second-stage recovery time is the time it takes for the power diode to move from the maximum value of the reverse recovery current to the zero-crossing point when a straight line is drawn from the point where the maximum value of the reverse recovery current is 25% of the maximum value of the reverse recovery current is drawn.

[0102] The controllable current source output value calculation unit is used to calculate the controllable current source output value corresponding to the first turn-off circuit stage based on the second stage recovery time and in conjunction with the reverse first-order process analysis.

[0103] In one optional embodiment, the controllable current source output value calculation unit includes:

[0104] The first-order time constant inverse calculation unit is used to inversely deduce the first-order time constant corresponding to the first turn-off circuit stage based on the first-order characteristics of the reverse recovery, according to the second-stage recovery time.

[0105] The controllable current source output value calculation subunit is used to calculate the controllable current source output value corresponding to the first turn-off circuit stage based on the first-order time constant and the preset controllable current source expected value.

[0106] In one alternative embodiment, the output value of the controllable current source is calculated using the following formula:

[0107]

[0108] in, This represents the output value of the controllable current source; This represents the preset expected value of the controllable current source; Indicates the first-order time constant; Represents bilinear transformation ; Indicates the sampling period; This represents the z-transform.

[0109] In one optional embodiment, after the power diode is turned off from its normal operating point, the turn-off circuit enters the first turn-off circuit stage; the rapid modeling device for the real-time model of the power diode further includes a diode current variation unit, which is specifically used for:

[0110] The diode current undergoes a dynamic reversal in a linear decreasing pattern.

[0111] After the diode current passes the zero-crossing point, the reverse recovery time begins to accumulate until the maximum value of the reverse recovery current and the point at which the maximum value of the reverse recovery current is 25% are extended to the zero-crossing point.

[0112] After reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decaying state of first-order current change.

[0113] In one alternative embodiment, the rapid modeling apparatus for the real-time model of the power diode further includes:

[0114] The second shutdown circuit stage transition unit is used to switch the shutdown stage of the shutdown circuit from the first shutdown circuit stage to the second shutdown circuit stage when the reverse recovery current of the power diode decays to near zero.

[0115] In one alternative embodiment, the circuit configuration of the behavioral model further includes a through-state circuit, which adopts the circuit form of a resistor connected in parallel with a controllable current source.

[0116] As the device embodiment is basically similar to the method embodiment, it is described in a relatively simple way. For relevant details, please refer to the description of the method embodiment above.

[0117] It should be noted that, in order to enable those skilled in the art to better distinguish data of the same type but with different actual meanings, the embodiments of the present invention use "first" and "second" to distinguish and describe some technical features. "First" and "second" are only used to distinguish data and have no other special meaning. It is understood that the present invention does not impose any limitations on them.

[0118] This invention also provides an electronic device, which includes a processor and a memory:

[0119] The memory is used to store program code and transfer the program code to the processor;

[0120] The processor is used to execute a rapid modeling method for a real-time power diode model according to instructions in the program code, based on any embodiment of the present invention.

[0121] This invention also provides a computer-readable storage medium for storing program code for executing a rapid modeling method for a real-time power diode model according to any embodiment of this invention.

[0122] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0123] In the embodiments provided by this invention, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between devices or units through some interfaces, and may be electrical, mechanical, or other forms.

[0124] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0125] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0126] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0127] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A fast modeling method of power diode real-time model, characterized in that, The method comprises the following steps: A two-node model is used to connect a power diode, which is used as a behavior model of the power diode, and is connected to a main circuit of a power system; The circuit form of the behavior model comprises a turn-off circuit, and a turn-off stage of the turn-off circuit comprises a first turn-off circuit stage and a second turn-off circuit stage; In the first turn-off circuit stage, the turn-off circuit is controlled to have a circuit form of a large resistance in parallel with a controllable current source, and an output value of the controllable current source corresponding to the first turn-off circuit stage is calculated; When the turn-off stage of the turn-off circuit changes from the first turn-off circuit stage to the second turn-off circuit stage, the controllable current source is controlled to be zero; The calculation of the output value of the controllable current source corresponding to the first turn-off circuit stage comprises the following steps: The maximum reverse recovery current, the total amount of reverse recovery charge, and the first-stage recovery time from a zero-crossing point to the maximum reverse recovery current of the power diode are obtained; The reverse recovery time is calculated according to the maximum reverse recovery current and the total amount of reverse recovery charge; The second-stage recovery time is inversely deduced based on the reverse recovery time and in combination with the first-stage recovery time, and the second-stage recovery time is the time from the maximum reverse recovery current to a point 25% of the maximum reverse recovery current and then to the zero-crossing point in a straight line; The output value of the controllable current source corresponding to the first turn-off circuit stage is calculated according to the second-stage recovery time and in combination with reverse first-order process analysis.

2. The method of claim 1, wherein, The calculation of the output value of the controllable current source corresponding to the first turn-off circuit stage according to the second-stage recovery time and in combination with reverse first-order process analysis comprises the following steps: The first-order time constant corresponding to the first turn-off circuit stage is inversely deduced based on the first-order characteristics of reverse recovery according to the second-stage recovery time; The output value of the controllable current source corresponding to the first turn-off circuit stage is calculated according to the first-order time constant and in combination with a preset expected value of the controllable current source.

3. The method of claim 2, wherein, The output value of the controllable current source is calculated by the following formula: ； wherein, represents a controllable current source output value; represents a preset controllable current source desired value; represents a first order time constant; represents a bilinear transformation ; represents a sampling period; represents a z-transform.

4. The method of claim 1, wherein, After the power diode is turned off from a normal operating point, the turn-off circuit enters the first turn-off circuit stage; The change process of a diode current corresponding to the first turn-off circuit stage is as follows: The diode current changes dynamically in a straight-line descending form; After the diode current passes through a zero-crossing point, the reverse recovery time is accumulated until a point 25% of the maximum reverse recovery current and then to the zero-crossing point in a straight line; After the maximum reverse recovery current is reached, the diode current starts to show a decaying state of first-order current change.

5. The method of claim 4, wherein, The method further comprises the following steps: When the reverse recovery current of the power diode decays to a point close to zero, the turn-off stage of the turn-off circuit changes from the first turn-off circuit stage to the second turn-off circuit stage.

6. The method of claim 1 to 5, wherein, The circuit form of the behavior model further comprises a forward-state circuit, and the forward-state circuit has a circuit form of a resistance in parallel with a controllable current source.

7. A fast modeling device of a power diode real-time model, characterized by, The method comprises the following steps: The behavior model construction unit is configured to connect a two-node model with a power diode as a behavior model of the power diode and access a main circuit of a power system; a circuit form of the behavior model comprises an off circuit, and an off stage of the off circuit comprises a first off circuit stage and a second off circuit stage; The first off circuit stage control unit is configured to control the off circuit to adopt a circuit form of a large resistance in parallel with a controllable current source in the first off circuit stage and calculate a controllable current source output value corresponding to the first off circuit stage: The second off circuit stage control unit is configured to control the controllable current source to be zero when the off stage of the off circuit changes from the first off circuit stage to the second off circuit stage; The first off circuit stage control unit comprises: A data acquisition unit is configured to acquire a reverse recovery current maximum value, a reverse recovery charge total amount, and a first stage recovery time from a zero-crossing point to the reverse recovery current maximum value of the power diode; A reverse recovery time calculation unit is configured to calculate a reverse recovery time according to the reverse recovery current maximum value and the reverse recovery charge total amount; A second stage recovery time calculation unit is configured to back-calculate a second stage recovery time based on the reverse recovery time and in combination with the first stage recovery time; the second stage recovery time is a time from the reverse recovery current maximum value to a zero-crossing point of a straight line extended from a 25% point of the reverse recovery current maximum value of the power diode; A controllable current source output value calculation unit is configured to calculate a controllable current source output value corresponding to the first off circuit stage according to the second stage recovery time and in combination with a reverse first-order process analysis.

8. An electronic device, comprising: The device comprises a processor and a memory: The memory is configured to store program code and transmit the program code to the processor; The processor is configured to execute the instructions in the program code to perform the fast modeling method of the real-time model of the power diode according to any one of claims 1-6.

9. A computer-readable storage medium, characterized in that, The computer readable storage medium is configured to store program code, and the program code is configured to perform the fast modeling method of the real-time model of the power diode according to any one of claims 1-6.

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