Silicon carbide driving and power adjusting circuit

Abstract

The invention discloses a silicon carbide driving and power adjusting circuit which comprises a single-chip microcomputer U1, a resistor R23, a resistor R44, a resistor R43, a resistor R15, a resistor R36, a resistor R39, a resistor R37, a capacitor C26, a capacitor C27, a triode N1, an MOS tube N2 and toggle switches CON3 + CON2 + CON1, the resistor R23 and the capacitor C23 are connected to 5V, the resistor R21 is connected to 15V, the resistor R44, the resistor R45 and the resistor R36 are connected to a collector electrode of the triode N1, the resistor R15 is connected to an emitter electrode of the triode N1, and the resistor R37 is connected to an emitter electrode of the triode N1. According to the silicon carbide electric welding machine, 70-100 KHz PWM signal conversion and electric welding machine power adjustment can be achieved, and the requirements of different users for power adjustment of the silicon carbide electric welding machine are met.

Description

Technical Field

[0001] The present invention relates to the technical field of driving power supply, and in particular to a silicon carbide driving and power regulating circuit. Background Art

[0002] At present, silicon carbide welding machines are widely used in welding of various metal materials, especially in industrial application scenarios that require high-precision welding. In order to meet the performance, precision, and environmental protection requirements of different users for silicon carbide welding machines, the silicon carbide drive circuit has 70-100KHz frequency modulation and power regulation functions. Summary of the invention

[0003] In order to make up for the deficiencies of the prior art, the embodiments of the present application propose a silicon carbide driving and power regulation circuit to solve the problems existing in the prior art.

[0004] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0005] A silicon carbide driving and power regulation circuit includes a single-chip computer U1, a resistor R23, a resistor R44, a resistor R43, a resistor R15, a resistor R36, a resistor R39, a resistor R37, a capacitor C26, a capacitor C27, a transistor N1, a MOS tube N2 and a toggle switch CON3+CON2+CON1, wherein the resistor R23 and the capacitor C23 are connected to 5V, the resistor R21 is connected to 15V, the resistor R44, the resistor R45 and the resistor R36 are connected to the collector of the transistor N1, the resistor R15 is connected to the emitter of the transistor N1, the other ends of the resistor R39 and the resistor R36 are connected to the base of the transistor N1, the two ends of the resistor R37 are respectively connected to the drain and the gate of the transistor N2, the source of the transistor N2 is connected to the 10th pin of the chip U5, the resistor R27 is connected to the 11th pin of the chip U5, the other end of the resistor R27 is ... connected to the drain and the gate of the transistor N2, the source of the transistor N2 is connected to the 10th pin of the chip U5, the resistor R27 is connected to the 11th pin of the chip U5, the other end of the resistor R27 is connected to the base of the transistor N1, the two ends of the resistor R37 are connected to the drain and the gate of the transistor N2, the source of the transistor N2 is connected to the 10th pin of the chip U5, the resistor R27 is connected The first end is connected to capacitor C30, the other end of capacitor C30 is grounded, resistor R26 is connected to pin 14 of chip U5, the other end of resistor R26 is connected to capacitor C25, the other end of capacitor C25 is grounded, pins 11 and 14 of chip U5 are drive output pins, resistor R21 is connected to pin 15 of chip U5, the other end of resistor R21 is grounded through capacitor C21 and capacitor C24 connected in parallel, pin 1 of chip U5 is grounded through resistor R22 and capacitor C20 connected in parallel, pin 18 of microcontroller chip U1 is connected to the base of transistor N1 through resistor R39, pin 17 of chip U1 is connected to the gate of transistor N2, pins 25, 26 and 27 of chip U1 are grounded through toggle switches CON3, CON2 and CON1 respectively, pin 7 of chip U1 is grounded through capacitor C31, and pin 8 of chip U1 is grounded through capacitor C32.

[0006] As a further technical solution of the present invention: the chip U1 is a single-chip microcomputer, specifically a STC15 series single-chip microcomputer.

[0007] As a further technical solution of the present invention: the model of the chip U5 is UC3846.

[0008] As a further technical solution of the present invention: the transistor N1 is a PNP transistor.

[0009] As a further technical solution of the present invention: the MOS tube N2 is a P-MOS tube.

[0010] As a further technical solution of the present invention: the single chip microcomputer U1 is also connected to the input terminal CN4 of the 70-100KHz frequency modulation controller.

[0011] As a further technical solution of the present invention: the capacitor C21 is an electrolytic capacitor.

[0012] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

[0013] The present invention can realize 70-100KHz PWM signal conversion and electric welding machine power regulation, and meet the needs of different users for silicon carbide electric welding machine power regulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a circuit diagram for realizing the driving frequency of UC3846 in the prior art;

[0015] Figure 2 This is a schematic diagram of UC3846 synchronizing with the main UC3846 via the SYNC pin;

[0016] Figure 3 This is the circuit diagram of different driving frequencies of UC3846.

[0017] Figure 4 It is a circuit schematic diagram of the present invention. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] Embodiment 1, as Figure 4As shown, a silicon carbide driving and power regulation circuit is mainly composed of a single-chip computer U1, a resistor R44, a resistor R43, a resistor R15, a resistor R36, a resistor R39, a resistor R37, a capacitor C26, a capacitor C27, a transistor N1, a MOS tube N2 and a toggle switch CON3+CON2+CON1, CN4 is a 70-100KHz frequency modulation controller input terminal, 3846-SYNC is a 60-100KHz frequency modulation controller output drive pulse, and 5V and 15V are DC voltage sources.

[0020] The specific connection relationship is as follows: resistor R23 and capacitor C23 are connected to 5V, resistor R21 is connected to 15V, resistor R44, resistor R45 and resistor R36 are connected to the collector of transistor N1, resistor R15 is connected to the emitter of transistor N1, the other ends of resistor R39 and resistor R36 are connected to the base of transistor N1, the two ends of resistor R37 are respectively connected to the drain and gate of transistor N2, the source of transistor N2 is connected to pin 10 of chip U5, resistor R27 is connected to pin 11 of chip U5, the other end of resistor R27 is connected to capacitor C30, the other end of capacitor C30 is grounded, resistor R26 is connected to pin 14 of chip U5, and the other end of resistor R26 is connected to pin 14 of chip U5. Capacitor C25, the other end of capacitor C25 is grounded, pins 11 and 14 of chip U5 are drive output pins, resistor R21 is connected to pin 15 of chip U5, the other end of resistor R21 is grounded through capacitor C21 and capacitor C24 connected in parallel, pin 1 of chip U5 is grounded through resistor R22 and capacitor C20 connected in parallel, pin 18 of microcontroller chip U1 is connected to the base of transistor N1 through resistor R39, pin 17 of chip U1 is connected to the gate of transistor N2, pins 25, 26 and 27 of chip U1 are grounded through toggle switches CON3, CON2 and CON1 respectively, pin 7 of chip U1 is grounded through capacitor C31, and pin 8 of chip U1 is grounded through capacitor C32.

[0021] Here’s how it works:

[0022] CON1, CON2, and CON3 are toggle switches with 3 gears in total, gear 1: CON1 pin is connected to ground; gear 2: CON2 pin is connected to ground; gear 3: CON3 pin is connected to ground, and so on. This patent uses gears 1, 2, and 3 as examples. From the circuit diagram of CON1, it can be seen that when pin 27 of U1 is grounded, the microcontroller finds that pin 27 is 0, pin 17 outputs a high level, pulls down pin 9 of UC3846, and the RC oscillation circuit composed of pins 8 and 9 of UC3846 fails. Pin 18 outputs a 80KHz drive PWM pulse, and pins 11 and 14 of UC3846 output two complementary silicon carbide drive PWMs of 80KHz; similarly, when CON2 is grounded, the microcontroller outputs a 90KHz PWM pulse, and when CON3 is grounded, the microcontroller outputs a 100KHz PWM pulse; when external parameters change, the microcontroller will also change the PWM pulse frequency to achieve the function of 80-100KHz PWM signal conversion. When the MCU fails or the program runs away, the N1 carrier frequency, UC3846 outputs a basic 68KHz PWM according to the RC circuit on pins 8 and 9 to ensure the basic operation of the circuit; the above is the principle of power regulation function. The MCU in this article is an 8-bit MCU, which is used for control.

[0023] The above introduces in detail the principle of the 70-100KHz dimming signal conversion circuit and power adjustment circuit. This circuit can realize 70-100KHz PWM signal conversion and welding machine power adjustment to meet the needs of different users for silicon carbide welding machine power adjustment.

[0024] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be considered exemplary and non-restrictive in all respects, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention.

[0025] In addition, it should be understood that although this specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment have also been appropriately combined to form other implementation modes that are easy for those skilled in the art to understand.

Claims

1. A silicon carbide driving and power regulation circuit, comprising a single chip microcomputer U1, a resistor R23, a resistor R44, a resistor R43, a resistor R15, a resistor R36, a resistor R39, a resistor R37, a capacitor C26, a capacitor C27, a transistor N1, a MOS tube N2 and a toggle switch CON3+CON2+CON1, characterized in that: The resistor R23 and the capacitor C23 are connected to 5V, the resistor R21 is connected to 15V, the resistor R44, the resistor R45 and the resistor R36 are connected to the collector of the transistor N1, the resistor R15 is connected to the emitter of the transistor N1, the other ends of the resistor R39 and the resistor R36 are connected to the base of the transistor N1, the two ends of the resistor R37 are respectively connected to the drain and the gate of the transistor N2, the source of the transistor N2 is connected to the 10th pin of the chip U5, the resistor R27 is connected to the 11th pin of the chip U5, the other end of the resistor R27 is connected to the capacitor C30, the other end of the capacitor C30 is grounded, the resistor R26 is connected to the 14th pin of the chip U5, and the other end of the resistor R26 is connected to the capacitor C 25, the other end of capacitor C25 is grounded, pins 11 and 14 of chip U5 are drive output pins, resistor R21 is connected to pin 15 of chip U5, the other end of resistor R21 is grounded through capacitor C21 and capacitor C24 connected in parallel, pin 1 of chip U5 is grounded through resistor R22 and capacitor C20 connected in parallel, pin 18 of microcontroller chip U1 is connected to the base of transistor N1 through resistor R39, pin 17 of chip U1 is connected to the gate of transistor N2, pins 25, 26 and 27 of chip U1 are grounded through toggle switches CON3, CON2 and CON1 respectively, pin 7 of chip U1 is grounded through capacitor C31, and pin 8 of chip U1 is grounded through capacitor C32.

2. A silicon carbide driving and power regulating circuit according to claim 1, characterized in that: The chip U1 is a single-chip microcomputer, specifically a STC15 series single-chip microcomputer.

3. A silicon carbide driving and power regulating circuit according to claim 1, characterized in that: The model of the chip U5 is UC3846.

4. A silicon carbide driving and power regulating circuit according to claim 1, characterized in that: The transistor N1 is a PNP transistor.

5. A silicon carbide driving and power regulating circuit according to claim 4, characterized in that: The MOS tube N2 is a P-MOS tube.

6. The silicon carbide driving and power regulating circuit according to claim 1, characterized in that: The single chip microcomputer U1 is also connected to the 70-100KHz frequency modulation controller input terminal CN4.

7. A silicon carbide driving and power regulating circuit according to claim 6, characterized in that: The capacitor C21 is an electrolytic capacitor.

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